WO2018121141A1 - 一种辅助图形的添加方法 - Google Patents

一种辅助图形的添加方法 Download PDF

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Publication number
WO2018121141A1
WO2018121141A1 PCT/CN2017/112496 CN2017112496W WO2018121141A1 WO 2018121141 A1 WO2018121141 A1 WO 2018121141A1 CN 2017112496 W CN2017112496 W CN 2017112496W WO 2018121141 A1 WO2018121141 A1 WO 2018121141A1
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auxiliary
graphic
rule
target
auxiliary graphic
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PCT/CN2017/112496
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English (en)
French (fr)
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胡红梅
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上海集成电路研发中心有限公司
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Priority to US16/475,116 priority Critical patent/US20190332019A1/en
Publication of WO2018121141A1 publication Critical patent/WO2018121141A1/zh

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441Optical proximity correction [OPC]
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Definitions

  • the present invention relates to the field of integrated circuit technology, and in particular, to a method for adding an auxiliary graphic.
  • the mask Error Effect (MEF) of the via layer level increases significantly, resulting in a small fluctuation in the size of the mask pattern resulting in a significant change in the line width on the silicon wafer, while Various fluctuations occur in the semiconductor process conditions, and typically fluctuations in the focal length, fluctuations in the exposure energy, etc. in the photolithography process may cause fluctuations in the width of the lithography line. Therefore, in order to ensure yield, it is necessary to improve the resolution and process window of the via pattern.
  • MEF Mask Error Effect
  • a commonly used method is to insert an AF (assist feature) around the through hole, including rule-based AF (RBAF) and model-based AF (MBAF) to improve the spatial frequency and spatial image of the through hole to improve the resolution of the through hole and Process window.
  • RBAF rule-based AF
  • MBAF model-based AF
  • the principle of MBAF is to add AF based on the model, which takes a long time to run, while RBAF adds AF based on a series of rule combinations, including the addition of side AF and corner AF.
  • the AF rule is based on a large number of verification data collected on the silicon for auxiliary graphics and line widths and images (including the type and size of the graphics). According to the verified AF rule, in the optical Pro In the Optical Proximity Correction (OPC) process, AF is added to the target image that needs to be OPC-corrected, which is commonly called RBAF.
  • OPC Optical Proximity Correction
  • RBAF consists of a side bar and a corner bar.
  • the main parameters of the side bar are the auxiliary graphic size (SBW) / the distance between the auxiliary graphic and the target graphic (S2M) / the distance between the auxiliary graphics (S2S) ), the main parameters of corner AF are the auxiliary graphic size (SBW) / the distance between the auxiliary graphic and the target graphic (S2M), as shown in Figure 1.
  • SBW auxiliary graphic size
  • S2M target graphic
  • Figure 1 According to the distance of the overlapping area between the edges of the target graphic, refer to the AF rule to determine the AF parameter of the overlapping area for AF addition. Depending on the distance, one may be added between the two through holes, two or more. Root AF.
  • the object of the present invention is to remedy the above-mentioned deficiencies of the prior art.
  • the present invention is directed to a method for adding an auxiliary pattern, which realizes the addition of an auxiliary pattern when the edge distance of the target image is small.
  • the present invention provides a method for adding an auxiliary graphic, which includes:
  • Step 01 Providing an OPC target graphic, and selecting a rule in which only one auxiliary graphic part can be added according to the auxiliary graphic reference rule, and establishing an auxiliary graphic additional rule; wherein the auxiliary graphic may be present in the OPC target graphic;
  • Step 02 The target image is enlarged as a whole, so that all sides of the target graphic are extended outward by A distance;
  • A is a non-negative number, and the unit of A is a length unit;
  • Step 03 Based on the auxiliary graphic additional rule, the corresponding target in the auxiliary graphic additional rule The distance value between the graphics is subtracted by 2A; and, based on the A distance, other parameters of the auxiliary graphics additional rules that are affected by the overall amplification of the target graphics are adjusted accordingly;
  • Step 04 Run an auxiliary graphic additional rule to generate a first auxiliary graphic
  • Step 05 Using the first auxiliary graphic as the newly added reference graphic, executing the auxiliary graphic reference rule on the target graphic to generate the second auxiliary graphic; and superimposing the first auxiliary graphic, the second auxiliary graphic and the existing auxiliary graphic to form a final auxiliary Graphics.
  • the A distance is less than 1/2 of the minimum spacing allowed by the target graphic.
  • the auxiliary graphics in the auxiliary graphic reference rule and the auxiliary graphic additional rule are edge auxiliary graphics.
  • the method further includes: establishing an initial rule-based auxiliary graphic for the target graphic based on the auxiliary graphic reference rule; and in step 05, further comprising: using the first auxiliary graphic
  • the initial rule-based auxiliary graphic, the original input auxiliary graphic, and the original input reference graphic are used as reference graphics, and the auxiliary graphic reference rule is executed on the target graphic to generate a second auxiliary graphic; the final auxiliary graphic is the first auxiliary graphic and the second auxiliary
  • the graphics, the initial rule-based auxiliary graphics, and the original input assisted graphics overlay are used.
  • the initial rule-based auxiliary graphic comprises: a side bar and a corner bar.
  • the target graphic is a through hole graphic.
  • the auxiliary graphics are all sub-resolution graphics.
  • the method further comprises: replacing the enlarged OPC target graphic with the OPC target graphic in step 01.
  • the method for adding the auxiliary pattern of the present invention is based on the auxiliary pattern reference rule RBAF Basically, the auxiliary graphics additional rules are established and the target graphics are enlarged as a whole.
  • the purpose is to solve the problem that the AF cannot be added by the conventional RBAF method when the overlapping edge length between the target through-hole patterns is short. Therefore, compared with the conventional RBAF method, the present invention increases the auxiliary target pattern in the through-hole target pattern more and more rationally while maintaining the auxiliary pattern reference rule unchanged, thereby effectively improving the through-hole target pattern. Quality and process window.
  • Figure 1 is a schematic diagram of parameters based on rule-assisted graphics.
  • FIG. 2 is a schematic diagram of a conventional auxiliary pattern corresponding to a short length of an edge overlap region in a target figure.
  • FIG. 3 is a schematic flow chart of a method for adding an auxiliary graphic according to a preferred embodiment of the present invention.
  • FIG. 4 is a schematic view showing an overall enlarged target image according to a preferred embodiment of the present invention.
  • FIG. 5 is a schematic diagram showing the first auxiliary pattern generated by amplifying the target graphic as a whole according to a preferred embodiment of the present invention
  • FIG. 6 is a schematic diagram of the first embodiment of the present invention after the first auxiliary graphic is generated and the enlarged target image is restored to the original target graphic.
  • the invention is based on a reference AF rule, that is, an auxiliary graphic reference rule, hereinafter referred to as a Base AF rule,
  • An additional AF rule is defined, which is an additional rule for the auxiliary graphic.
  • the Extra AF rule only contains the rule information of only one AF in the Base AF rule.
  • FIGS. 3 to 6 specific embodiments. It should be noted that the drawings are in a very simplified form, using a non-precise ratio, and are only used to facilitate the purpose of the present embodiment.
  • a method for adding an auxiliary graphic includes:
  • Step 01 Providing an OPC target graphic, and selecting a rule in which only one auxiliary graphic part can be added according to the auxiliary graphic reference rule, and establishing an auxiliary graphic additional rule;
  • the OPC target graphic in the embodiment is a through hole graphic
  • the auxiliary graphic in the auxiliary graphic reference rule and the auxiliary graphic additional rule are edge auxiliary graphics, and are all sub-resolution graphics; wherein, the OPC target graphic has been There are auxiliary graphics.
  • an initial rule-based auxiliary graphic is created for the target graphic based on the auxiliary graphic reference rule before the auxiliary graphic additional rule is established.
  • the initial rule-based auxiliary graphic includes: side side bar and corner auxiliary graphic. (corner bar), please refer to Figure 1 for each auxiliary graphic parameter information; then, based on the auxiliary graphic reference rule Base AF rule, select the rule part in which only one auxiliary graphic can be added, and establish additional rules for auxiliary graphics, Extra AF rule;
  • Step 02 The target image is enlarged as a whole, so that all sides of the target graphic are extended outward by A distance;
  • the through-hole pattern is enlarged outward as a whole, so that the four sides of the through-hole pattern are outwardly extended by A distance, and the A distance is smaller than 1/2 of the minimum pitch of the through-hole target pattern.
  • A is a non-negative number
  • the unit of A is a unit of length; in this embodiment, the unit of length of A may be nm.
  • Step 03 Subtracting the distance value between the corresponding target graphics in the auxiliary graphic extra rule by 2A based on the auxiliary graphic additional rule; and, based on the A distance, affecting the auxiliary graphic additional rule due to the overall enlargement of the target graphic Other parameters are adjusted accordingly;
  • subtracting the distance value between the through hole patterns in the specification by 2A includes: the distance from the auxiliary graphic to the target graphic (S2M), the auxiliary graphic The minimum distance allowed from the target graphic, etc., for example, subtracting A from the distance of S2M, and subtracting A from the minimum distance allowed by the original auxiliary graphic and the target graphic.
  • Step 04 Run an auxiliary graphic additional rule to generate a first auxiliary graphic
  • Step 05 Using the first auxiliary graphic as the newly added reference graphic, executing the auxiliary graphic reference rule on the target graphic to generate the second auxiliary graphic; and superimposing the first auxiliary graphic and the second auxiliary graphic to form the final auxiliary graphic.
  • step 04 further comprises: replacing the enlarged OPC target graphic with the OPC target graphic in step 01, as shown in FIG. 6.
  • Step 05 Using the first auxiliary graphic as the newly added reference graphic, executing the auxiliary graphic reference rule on the target graphic to generate the second auxiliary graphic; and superimposing the first auxiliary graphic, the second auxiliary graphic and the existing auxiliary graphic to form a final auxiliary Graphics.
  • the first auxiliary graphic, the initial rule-based auxiliary graphic, the original input auxiliary graphic, and the original input reference graphic are used as reference graphics, and the auxiliary graphic reference rule is executed on the target graphic to generate a second auxiliary graphic; the final auxiliary graphic is The first auxiliary graphic, the second auxiliary graphic, the initial rule-based auxiliary graphic, and the original input auxiliary graphic are superimposed.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Image Generation (AREA)
  • Prostheses (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

一种辅助图形的添加方法,包括:提供一OPC目标图形,根据辅助图形基准规则,选取其中只能加入一根辅助图形部分的规则,建立辅助图形额外规则;把目标图形整体进行放大,使目标图形的所有边向外扩展A距离;基于辅助图形额外规则,将该辅助图形额外规则中相应目标图形之间的距离值减去2A;并且,基于A距离,将辅助图形额外规则中因目标图形整体放大而受到影响的其他参数进行相应调整;运行辅助图形额外规则,生成第一辅助图形;以第一辅助图形作为新增的参考图形,对目标图形执行辅助图形基准规则,生成第二辅助图形;将第一辅助图形,第二辅助图形和其它已有辅助图形叠加构成最终的辅助图形。

Description

一种辅助图形的添加方法
本申请要求于2016年12月30日提交中国专利局、申请号为_201611259536.0、名称为“一种辅助图形的添加方法”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。
技术领域
本发明涉及集成电路技术领域,尤其涉及一种辅助图形的添加方法。
技术背景
在暗场工艺中,通孔获得的光强较弱,图像对比度差。随着线宽的减小,通孔层次的掩模版误差因子(Mask Error Effect,MEF)增大明显,由此带来的是掩模版图形尺寸的微小波动导致硅片上线宽的显著变化,同时,半导体工艺条件会出现各种波动,典型地如光刻工艺中焦距的波动、曝光能量的波动等都会导致光刻线宽的波动。因此,为确保良率,必须提高通孔图形的解析能力和工艺窗口。
目前常用的方法是在通孔周围插入AF(assist feature),包括基于规则的AF(RBAF)和基于模型的AF(MBAF)来改善通孔的空间频率和空间像从而提高通孔的解析度和工艺窗口。MBAF的原理是基于模型(model)进行AF的添加,运行时间较长,而RBAF则是基于一系列规则组合来添加AF,包括side AF和corner AF的添加。
AF rule是基于硅片上收集的大量关于辅助图形与线宽和图像等验证数据而制定的(包含图形的类型和尺寸)。根据该验证过的AF rule,在光学临 近修正(Optical Proximity Correction,OPC)过程中,对需要进行OPC修正的目标图形添加AF,即通常所说的RBAF。RBAF包含边辅助图形(side bar)和角辅助图形(corner bar),side bar的主要参数有辅助图形尺寸(SBW)/辅助图形与目标图形的距离(S2M)/辅助图形之间的距离(S2S),corner AF主要参数有辅助图形尺寸(SBW)/辅助图形与目标图形的距离(S2M),如图1所示。按照目标图形边缘间重叠区域的距离,参照AF rule,从而确定该交叠区域的AF参数以进行AF的添加,根据距离的大小,在两个通孔间可能加入一根,两根甚至更多根的AF。
对于某些通孔图形,当边缘重叠区域长度较短时,受最小AF长度、S2M等参数的影响,对于常规RBAF,该区域内将不会有AF的添加,如图2所示,A区域内最终的AF添加结果为其中的带斜线图形。
发明概要
本发明的目的在于弥补上述现有技术的不足,本发明旨在提供一种辅助图形的添加方法,在目标图形边缘距离较小的情况下实现辅助图形的添加。
为了达到上述目的,本发明提供了一种辅助图形的添加方法,其包括:
步骤01:提供一OPC目标图形,根据辅助图形基准规则,选取其中只能加入一根辅助图形部分的规则,建立辅助图形额外规则;其中,OPC目标图形中可能已有辅助图形;
步骤02:把目标图形整体进行放大,使目标图形的所有边向外扩展A距离;A为非负数,A的单位为长度单位;
步骤03:基于辅助图形额外规则,将所述辅助图形额外规则中相应目标 图形之间的距离值减去2A;并且,基于A距离,将辅助图形额外规则中因目标图形整体放大而受到影响的其他参数进行相应调整;
步骤04:运行辅助图形额外规则,生成第一辅助图形;
步骤05:以第一辅助图形作为新增的参考图形,对目标图形执行辅助图形基准规则,生成第二辅助图形;将第一辅助图形,第二辅助图形和已有辅助图形叠加构成最终的辅助图形。
优选地,所述步骤02中,A距离小于目标图形所允许的最小间距的1/2。
优选地,所述辅助图形基准规则和辅助图形额外规则中的辅助图形均为边辅助图形。
优选地,所述步骤01中,在建立辅助图形额外规则之前,还包括:基于辅助图形基准规则,对目标图形建立初始的基于规则的辅助图形;步骤05中,还包括:以第一辅助图形、初始基于规则的辅助图形、原始输入辅助图形和原始输入参考图形作为参考图形,对目标图形执行辅助图形基准规则,生成第二辅助图形;最终的辅助图形是将第一辅助图形、第二辅助图形、初始基于规则的辅助图形和原始输入辅助图形叠加构成的。
优选地,所述初始基于规则的辅助图形包括:边辅助图形(side bar)和角辅助图形(corner bar)。
优选地,所述目标图形为通孔图形。
优选地,所述辅助图形均为亚分辨率图形。
优选地,步骤04之后且所述步骤05之前,还包括:将步骤01中的OPC目标图形替代放大后的OPC目标图形。
本发明的辅助图形的添加方法,通过以辅助图形基准规则RBAF为基 础,建立辅助图形额外规则并对目标图形整体进行放大,目的在于解决当目标通孔图形间重叠边缘长度较短时,通过常规RBAF方法无法加入AF的问题。因此,相比常规的RBAF方法,本发明在维持辅助图形基准规则不变的情况下,更大可能且更合理地在通孔目标图形中添加了辅助图形,从而有效提高了通孔目标图形的质量和工艺窗口。
附图说明
为能更清楚理解本发明的目的、特点和优点,以下将结合附图对本发明的较佳实施例进行详细描述,其中:
图1为基于规则辅助图形的参数示意图
图2为目标图形中的边缘重叠区域长度较短时所对应的一种常规的辅助图形的示意图
图3为本发明的一个较佳实施例的辅助图形的添加方法的流程示意图
图4为本发明的一个较佳实施例的将目标图形整体放大后的示意图
图5为本发明的一个较佳实施例的将目标图形整体放大后生成了第一辅助图形的示意图
图6为本发明的一个较佳实施例生成第一辅助图形后将放大后的目标图形还原为初始的目标图形后的示意图。
发明内容
为使本发明的内容更加清楚易懂,以下结合说明书附图,对本发明的内容作进一步说明。当然本发明并不局限于该具体实施例,本领域内的技术人员所熟知的一般替换也涵盖在本发明的保护范围内。
本发明根据基准AF rule,即辅助图形基准规则,以下简称Base AF rule, 制定一套额外的AF rule,即辅助图形额外规则,以下简称Extra AF rule,该Extra AF rule中只含Base AF rule中只能加入一根AF的规则信息。
以下结合附图3~6和具体实施例对本发明作进一步详细说明。需说明的是,附图均采用非常简化的形式、使用非精准的比例,且仅用以方便、清晰地达到辅助说明本实施例的目的。
请参阅图3,本实施例的一种辅助图形的添加方法,包括:
步骤01:提供一OPC目标图形,根据辅助图形基准规则,选取其中只能加入一根辅助图形部分的规则,建立辅助图形额外规则;
具体的,本实施例中的OPC目标图形为通孔图形,辅助图形基准规则和辅助图形额外规则中的辅助图形均为边辅助图形,且均为亚分辨率图形;其中,OPC目标图形中已有辅助图形。首先,在建立辅助图形额外规则之前,基于辅助图形基准规则,对目标图形建立初始的基于规则的辅助图形,这里的初始的基于规则的辅助图形包括:边辅助图形(side bar)和角辅助图形(corner bar),各辅助图形参数信息请参阅图1;然后,基于辅助图形基准规则Base AF rule,选取其中只能加入一根辅助图形的规则部分,建立辅助图形额外规则,Extra AF rule;
步骤02:把目标图形整体进行放大,使目标图形的所有边向外扩展A距离;
具体的,如图4所示,将通孔图形整体向外放大,使通孔图形的四个边均向外扩展A距离,A距离小于通孔目标图形最小间距的1/2,。需要说明的是,A为非负数,A的单位为长度单位;本实施例中,A的长度单位可以为nm。
步骤03:基于辅助图形额外规则,将所述辅助图形额外规则中相应目标图形之间的距离值减去2A;并且,基于A距离,将辅助图形额外规则中因目标图形整体放大而受到影响的其他参数进行相应调整;
具体的,请再次参阅图4,基于Extra AF rule,将规范中通孔图形之间的距离值减去2A,并且,这里的其他参数包括:辅助图形至目标图形的距离(S2M),辅助图形与目标图形所允许的最小距离等,例如,将S2M的距离减去A,将原有辅助图形与目标图形所允许的最小距离减去A。
步骤04:运行辅助图形额外规则,生成第一辅助图形;
具体的,请参阅图5,已经为OPC目标图形中边缘重叠区域较短的区域已经加入了AF(虚线图形所示)。步骤05:以第一辅助图形作为新增的参考图形,对目标图形执行辅助图形基准规则,生成第二辅助图形;将第一辅助图形和第二辅助图形叠加构成最终的辅助图形。
步骤04之后且在步骤05之前,还包括:将步骤01中的OPC目标图形替代放大后的OPC目标图形,如图6所示。
步骤05:以第一辅助图形作为新增的参考图形,对目标图形执行辅助图形基准规则,生成第二辅助图形;将第一辅助图形,第二辅助图形和已有辅助图形叠加构成最终的辅助图形。
具体的,以第一辅助图形、初始基于规则的辅助图形、原始输入辅助图形和原始输入参考图形作为参考图形,对目标图形执行辅助图形基准规则,生成第二辅助图形;最终的辅助图形是将第一辅助图形、第二辅助图形、初始基于规则的辅助图形和原始输入辅助图形叠加构成的。
虽然本发明已以较佳实施例揭示如上,然所述实施例仅为了便于说明而 举例而已,并非用以限定本发明,本领域的技术人员在不脱离本发明精神和范围的前提下可作若干的更动与润饰,本发明所主张的保护范围应以权利要求书所述为准。

Claims (8)

  1. 一种辅助图形的添加方法,其特征在于,包括:
    步骤01:提供一OPC目标图形,根据辅助图形基准规则,选取其中只能加入一根辅助图形部分的规则,建立辅助图形额外规则;其中,OPC目标图形中已有辅助图形;
    步骤02:把目标图形整体进行放大,使目标图形的所有边向外扩展A距离;A为非负数,A的单位为长度单位;
    步骤03:基于辅助图形额外规则,将所述辅助图形额外规则中相应目标图形之间的距离值减去2A;并且,基于A距离,将辅助图形额外规则中因目标图形整体放大而受到影响的其他参数进行相应调整;
    步骤04:运行辅助图形额外规则,生成第一辅助图形;
    步骤05:以第一辅助图形作为新增的参考图形,对目标图形执行辅助图形基准规则,生成第二辅助图形;将第一辅助图形,第二辅助图形和已有辅助图形叠加构成最终的辅助图形。
  2. 根据权利要求1所述的辅助图形的添加方法,其特征在于,所述步骤02中,A距离小于目标图形所允许的最小间距的1/2。
  3. 根据权利要求1所述的辅助图形的添加方法,其特征在于,所述辅助图形基准规则和辅助图形额外规则中的辅助图形均为边辅助图形。
  4. 根据权利要求1所述的辅助图形的添加方法,其特征在于,所述步骤01中,在建立辅助图形额外规则之前,还包括:基于辅助图形基准规则,对目标图形建立初始基于规则的辅助图形;步骤05中,还包括:以第 一辅助图形、初始基于规则的辅助图形、原始输入辅助图形和原始输入参考图形作为参考图形,对目标图形执行辅助图形基准规则,生成第二辅助图形;最终的辅助图形是将第一辅助图形、第二辅助图形、初始基于规则的辅助图形和原始输入辅助图形叠加构成的。
  5. 根据权利要求4所述的辅助图形的添加方法,其特征在于,所述初始基于规则的辅助图形包括:边辅助图形(side bar)和角辅助图形(corner bar)。
  6. 根据权利要求1所述的辅助图形的添加方法,其特征在于,所述目标图形为通孔图形。
  7. 根据权利要求1所述的辅助图形的添加方法,其特征在于,所述辅助图形均为亚分辨率图形。
  8. 根据权利要求1所述的辅助图形的添加方法,其特征在于,步骤04之后且在所述步骤05之前,还包括:将步骤01中的OPC目标图形替代放大后的OPC目标图形。
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