WO2018120972A1

WO2018120972A1 - Organic light-emitting diode device

Info

Publication number: WO2018120972A1
Application number: PCT/CN2017/105312
Authority: WO
Inventors: 李慧杨; 戴雷; 蔡丽菲
Original assignee: 广东阿格蕾雅光电材料有限公司
Priority date: 2016-12-30
Filing date: 2017-10-09
Publication date: 2018-07-05
Also published as: TW201825460A; CN108269947A

Abstract

An organic light-emitting diode device of the present invention comprises a cathode, an anode, and an organic layer. The organic layer comprises a compound having a structure of formula (I), wherein Ar is an N-aryl carbazole, R and R² are independently selected from hydrogen, a C1-C4 alkyl substituted or unsubstituted by a C1-C4 alkyl, a C2-C4 alkylene substituted or unsubstituted by a C1-C4 alkyl, a C2-C4 alkynyl substituted or unsubstituted by a C1-C4 alkyl, a C6-C10 aryl or aromatic hydrocarbon group substituted or unsubstituted by one or more substituents R¹, and a C5-C8 heteroaryl that contains one or more heteroatoms and is substituted or unsubstituted by one or more substituents R¹, and R¹ is independently selected from fluorine (F), chlorine (Cl), bromine (Br), iodine (I), cyano (CN), and a C1-C4 alkyl. Because an organic host material used in the present invention has a high glass transition temperature and a high thermal stability, a prepared organic light-emitting device has good and stable performance.

Description

Organic light emitting diode device

Technical field

The invention relates to an organic light emitting diode device, and an organic light emitting diode device is prepared by vacuum deposition of an organic layer material into a thin film.

Background technique

In recent years, organic light-emitting diodes (OLEDs) have attracted extensive attention from academia and industry as a lighting and display technology with great application prospects. OLED devices have the characteristics of self-luminous, wide viewing angle, short reaction time and large area and flexible devices, and they have potential low cost advantages, making them a strong competitor for next-generation display and lighting technology. Based on these characteristics, OLED is also known as the 21st century star display product. Today, OLED display products have been commercialized. However, there are still problems such as low efficiency and short life, which are yet to be further studied.

The organic light emitting diode is an electroluminescent device. Under voltage driving, electrons and holes respectively enter the light emitting layer through the electron transport layer and the hole transport layer to form an exciton; the exciton transmits energy to the organic molecule having the light emitting property, so that When it is excited, the excited state molecules return to the ground state and a radiation transition occurs to emit light. Since Forrest et al. reported on electroluminescent phosphorescent devices (PHOLEDs) in 1998, PHOLEDs have attracted much attention due to their ability to achieve 100% internal quantum efficiency using triplet and singlet exciton luminescence. PHOLED devices generally use a multi-layer structure, which has the advantage of facilitating the process of carrier injection, transport, and recombination. In the light-emitting layer, when the guest doping concentration is high, concentration quenching and T ₁ -T ₁ quenching occur, resulting in a decrease in luminous efficiency. To address these issues, the guest material is typically doped in the host material to "dilute" the concentration of the guest material. The ideal host material should have a suitable frontier orbital energy level to achieve efficient energy transfer between the host and guest, good carrier transport properties to achieve electron and hole balance in the luminescent layer, and better thermal stability. Conducive to the formation of a stable amorphous film. Therefore, in order to obtain high-efficiency PHOLED devices, it is particularly important to develop new host materials.

At present, the widely used host material is a 4,4'-N,N'-dicarbazole biphenyl (CBP) having a symmetrical structure, which substantially conforms to the requirements of the OLED for the host material in terms of its photoelectric properties, but its glass The transition temperature is low, only 62 ° C, so CBP has the disadvantage of being easily crystallized. Once the organic layer material is crystallized, the charge transition mechanism between molecules will be different from that of the normal amorphous film, and the energy transfer mode will also change. Eventually, energy transfer between the host and the object cannot be effectively performed, reducing the service life of the device. The difficulty of the transformation of the amorphous film into the crystalline film is mainly affected by the glass transition temperature (T _g ) of the organic material, and the higher the glass transition temperature, the better the stability of the film. Therefore, it is necessary to develop a new high glass transition temperature host material.

Summary of the invention

In view of the defects of the above materials, the present invention provides an organic electroluminescent diode device prepared by using an organic host material having high morphological stability.

An organic light emitting diode device comprising a cathode, an anode and an organic layer, the organic layer being one or more layers of a hole transport layer, a light emitting layer, a hole blocking layer, and an electron transport layer, wherein the organic layer has a chemical formula (I) ) Structure of the compound:

Wherein Ar is one of the following groups:

R, R ^{2 are} independently selected from hydrogen, C1-C4 alkyl substituted or unsubstituted C1-C4 alkyl, C1-C4 alkyl substituted or unsubstituted C2-C4 alkenyl, C1-C4 alkyl substituted or not Substituted C2-C4 alkynyl, C6-C10 containing one or more substituents R ¹ substituted or unsubstituted aryl, aromatic hydrocarbon group, C5-C8 containing one or more substituents R ¹ substituted or unsubstituted a heteroaryl group containing one or more heteroatoms;

R ^{1 is} independently selected from the group consisting of fluorine F, chlorine chloride, bromine Br, iodine I, cyanoCN, and a C1-C4 alkyl group.

Preferably, R, R ^{2 are} independently selected from hydrogen, C1-C4 alkyl, C6-C10 aryl or aromatic hydrocarbon group containing one or more substituents R ¹ substituted or unsubstituted;

R ^{1 is} independently selected from the group consisting of fluorine F, chlorine chloride, bromine Br, iodine I, and a C1-C4 alkyl group.

More preferably, R is selected from the group consisting of hydrogen, methyl, tert-butyl, phenyl, tolyl, naphthyl;

R ^{2 is} independently selected from the group consisting of hydrogen H, C1-C4 alkyl, C6-C10 aryl or aromatic hydrocarbon group containing one or more substituents R ¹ substituted or unsubstituted;

R ^{1 is} independently selected from the group consisting of fluorine F, chlorine chloride, bromine Br, and a C1-C4 alkyl group.

Further preferably, R and R ^{2 are} selected from the group consisting of hydrogen, tert-butyl, phenyl, and tolyl, and R ^{1 is} selected from the group consisting of hydrogen and methyl.

Particularly preferably, R, R ^{2 are} selected from the group consisting of hydrogen, tert-butyl, phenyl, and R ^{1 is} selected from hydrogen.

The compound of the formula (I) structure is a host material in the light-emitting layer.

The organic layer of the electronic device of the present invention has a total thickness of from 1 to 1000 nm, preferably from 1 to 500 nm, more preferably from 5 to 300 nm.

The organic layer may be formed into a film by a vaporization or solution method.

As mentioned above, the compounds of the formula (I) of the present invention are as follows, but are not limited to the structures listed:

Further preferably, the compound of the formula (I) has the following structure:

The device experiments show that the organic host material of the invention has high glass transition temperature and high thermal stability, and the prepared organic electroluminescent device has good and stable performance.

DRAWINGS

Figure 1 is a DSC curve of Compound 1 of the present invention,

2 is a structural view of an organic electroluminescent diode device of the present invention,

Wherein 10 represents a glass substrate, 20 represents an anode, 30 represents a hole injection layer, and 40 represents a hole transport layer, 50 Representative of the luminescent layer, 60 represents a hole blocking layer, 70 represents an electron transport layer, 80 represents an electron injecting layer, and 90 represents a cathode.

detailed description

In order to describe the present invention in more detail, the following examples are given, but are not limited thereto.

Example 1

Synthetic route of compound 1

Synthesis of compound b

Under a nitrogen atmosphere, phosphorus pentoxide (0.8 g, 5.6 mmol) was added to methanesulfonic acid (9.2 g, 95.6 mmol), and the mixture was stirred at room temperature for 2 hr to dissolve it in a viscous oil (Eaton reagent). Subsequently, Eaton reagent (1 mL) was added dropwise to Compound a (3.2 g, 10.0 mmol) (Ref. J. Mater. Chem. C., 2(12), 2160-2168) and triphenylmethanol (2.86 g, 11.0 mmol) in dichloromethane (100 mL). After the dropwise addition was completed, the mixture was stirred at room temperature for 2 hours. The reaction solution was washed with water three times and dried over anhydrous sodium sulfate. After removing the solvent under reduced pressure, the crude material was crystallised to white crystals (yield: ¹ H NMR (400 MHz, CDCl ₃ , δ): 8.01 (s, 1H), 7.94 (d, J = 7.6 Hz, 1H), 7.69 (d, J = 8.8 Hz, 2H), 7.44 (d, J = 8.8, 2H), 7.36 (d, J = 3.6 Hz, 2H), 7.32 - 7.18 (m, 18H). The glass transition temperature was 159 °C.

Synthesis of Compound 1

Compound b (2.0 g, 3.5 mmol), compound c (1.44 g, 3.9 mmol) (Ref. J. Mater. Chem. C., 1 (24), 3871-3878), Pd(PPh ₃ ) ₄ ( 208 mg, 0.2 mmol), tetrahydrofuran (30 mL) and aqueous potassium carbonate (2M, 5 mL) were then weighed. Vacuum was applied and nitrogen gas was introduced and it was repeated three times. Under nitrogen, reflux overnight. After cooling to room temperature, the above reaction solution was added to water, extracted with dichloromethane three times, and the organic phases were combined. The organic phase was dried over anhydrous sodium sulfate and evaporated, evaporated]]]]]]]] ¹ H NMR (400 MHz, CDCl ₃ , δ): 8.17 (d, J = 8.0 Hz, 2H), 8.05 (s, 1H), 7.98 (d, J = 7.6 Hz, 1H), 7.90-7.87 (m, 4H), 7.72-7.69 (m, 4H), 7.52 (s, 1H), 7.50 (s, 2H), 7.46-7.38 (m, 4H), 7.34 - 7.19 (m, 19H). The glass transition temperature was 159 °C.

Example 2

Glass transition temperature test:

The glass transition temperature of Compound 1 was measured by differential scanning calorimetry (DSC) at a heating and cooling rate of 20 ° C/min under nitrogen gas (Fig. 1). The glass transition temperature T _g of Compound 1 was measured to be 159 °C. The glass transition temperature of CBP reported in the literature is only 62 °C.

It can be seen that the compound of the present invention has a higher glass transition temperature than the commonly used commercially available material CBP. The present invention significantly improves the thermal stability of the electroluminescent device material, and more closely meets the requirements of the organic material for the electroluminescent device.

Example 3

Preparation of organic electroluminescent device 1

The OLED is prepared by using the organic host material of the invention, as shown in FIG. 2

First, the transparent conductive ITO glass substrate 10 (with the anode 20 on the surface) was sequentially washed with a detergent solution and deionized water, ethanol, acetone, deionized water, and then treated with oxygen plasma for 30 seconds.

Then, 10 nm thick MoO ₃ was vapor-deposited on the ITO as the hole injection layer 30.

Then, the compound NPB was evaporated to form a hole transport layer 40 having a thickness of 40 nm.

Then, Ir(PPy) ₃ (9%) and Compound 1 (91%) having a thickness of 30 nm were vapor-deposited on the hole transport layer as the light-emitting layer 50.

Then, a BCP having a thickness of 10 nm was vapor-deposited on the light-emitting layer as the hole blocking layer 60.

Then, 30 nm thick 30 nm thick AlQ ₃ was vapor-deposited on the hole blocking layer as the electron transport layer 70.

Finally, 1 nm LiF was vaporized into an

electron injection layer

80 and 100 nm Al as a device cathode 90.

Structure in the device

Devices prepared in operating current density 20mA / cm ^2, the luminance of 4362cd / m ^2, the current efficiency was 21.8cd / A green light emitting CIEx of 0.318, CIEy of 0.618.

Comparative example

Preparation of organic electroluminescent device 2

The same procedure as in Example 3 was carried out except that Ir(PPy) ₃ (9%) and a commercially available compound CBP (91%) were used as the light-emitting layer to prepare a comparative organic light-emitting diode device.

Structure in the device

Devices prepared in operating current density 20mA / cm ^2, the brightness was 3021cd / m ^2, a current efficiency of 15.1cd / A, green light emission of CIEx 0.321, CIEy of 0.613.

Comparing the experimental results of Comparative Example 3 and the comparative examples, it can be seen that the device prepared by using the organic material of the present invention has better electroluminescence performance than the widely used host material CBP, and is more compatible with the high performance organic semiconductor device to the host material. Requirements.

Claims

An organic light emitting diode device comprising a cathode, an anode and an organic layer, the organic layer being one or more layers of a hole transport layer, a light emitting layer, a hole blocking layer, and an electron transport layer, wherein the organic layer has a chemical formula (I) ) Structure of the compound:

Ar is one of the following N-aryl carbazole groups:

Wherein R, R 2 are independently selected from hydrogen, C1-C4 alkyl substituted or unsubstituted C1-C4 alkyl, C1-C4 alkyl substituted or unsubstituted C2-C4 olefinic alkyl, C1-C4 alkyl substituted Or an unsubstituted C2-C4 alkynyl group, a C6-C10 aryl group containing one or more substituents R 1 substituted or unsubstituted, and a C6-C10 group having one or more substituents R 1 substituted or unsubstituted An aromatic hydrocarbon group, a heteroaryl group of C5-C8 having one or more substituents R 1 substituted or unsubstituted, having one or more hetero atoms;

R 1 is independently selected from the group consisting of fluorine F, chlorine chloride, bromine Br, iodine I, cyanoCN, and a C1-C4 alkyl group.
The organic light emitting diode device according to claim 1, wherein R and R 2 are independently selected from the group consisting of hydrogen, C1-C4 alkyl, and C6-C10 aryl or aromatic hydrocarbon group having one or more substituents R 1 substituted or unsubstituted ;

R 1 is independently selected from the group consisting of fluorine F, chlorine chloride, bromine Br, iodine I, and a C1-C4 alkyl group.
The organic light emitting diode device according to claim 2, wherein R is independently selected from the group consisting of hydrogen, methyl, tert-butyl, phenyl, tolyl, and naphthyl;

R 2 is independently selected from the group consisting of hydrogen H, C1-C4 alkyl, C6-C10 aryl or aromatic hydrocarbon group containing one or more substituents R 1 substituted or unsubstituted;

R 1 is independently selected from the group consisting of fluorine F, chlorine chloride, bromine Br, and a C1-C4 alkyl group.
The organic light emitting diode device according to claim 3, wherein R and R 2 are independently selected from the group consisting of hydrogen, tert-butyl, phenyl, and tolyl, and R 1 is selected from the group consisting of hydrogen and methyl.
The organic light emitting diode device according to claim 4, wherein R and R 2 are independently selected from the group consisting of hydrogen, tert-butyl, and phenyl, and R 1 is hydrogen.
The organic light emitting diode device according to claim 5, wherein one of the compounds of the formula (I) structure:
The organic light emitting diode device according to claim 6, wherein the compound of the formula (I) is:
The organic light emitting diode device according to any one of claims 1 to 7, wherein the compound of the formula (I) is a host material in the light-emitting layer.
The organic light emitting diode device according to any one of claims 1 to 7, wherein said organic layer has a total thickness of from 1 to 1000 nm.
The organic light emitting diode device according to any one of claims 1 to 7, wherein the organic layer is formed into a thin film by a vaporization or solution method.