WO2018106039A1 - Organic metal chemical vapor deposition device - Google Patents

Abstract

The present invention relates to an organic metal chemical vapor deposition device. The organic metal chemical vapor deposition device according to the present invention comprises: a chamber that provides a processing space in which a substrate is processed; a gas supply portion for supplying a process gas into the chamber; and a substrate support portion provided inside the chamber, the substrate support portion having a containing groove on which the substrate is seated, and the support supporting portion heating the substrate. A seating portion is formed inside the containing groove such that the substrate is seated thereon. A middle groove is formed between the periphery of the seating portion and the containing groove.

Description

Organometallic Chemical Vapor Deposition Equipment

The present invention relates to an organometallic chemical vapor deposition apparatus.

As high-efficiency light emitting diodes (LEDs) are increasingly used in various industrial fields, equipment that can be mass-produced without degrading quality or performance is required. Organometallic deposition reactors are widely used in the manufacture of such light emitting diodes.

The Metal Organic Chemical Vapor Deposition (MOCVD) apparatus is a thermal decomposition method on a heated substrate by supplying a Group 3 alkyl (organic metal raw material gas) and a mixed gas of a Group 5 reaction gas and a high purity carrier gas into the reaction chamber. To grow a compound semiconductor crystal. The organometallic chemical vapor deposition apparatus mounts a substrate on a susceptor and injects gas from an upper surface or a side surface to grow semiconductor crystals on the substrate.

Meanwhile, as shown in FIG. 10, a process gas is disposed between the substrate W and the bottom of the accommodation groove 4 while the substrate W is seated in the accommodation groove 4 of the susceptor 2. Inflow, foreign substances such as particles 6 may be formed. In this case, when the wafer W is seated in the receiving groove 4 as shown in FIG. 10 to proceed with the process for the wafer W, the particles 6 do not allow the wafers W to be placed in parallel. As shown in the figure, it is inclined. This acts as a factor of yield reduction when growing the thin film by generating a temperature deviation on the wafer (W) surface.

In addition, aluminum nitride (AlN) based materials are generally used to fabricate light emitting diodes and laser diodes that emit ultraviolet light. In order to suppress the parasitic reaction of trimethylaluminum (TMA) used as the precursor of aluminum (Al) and NH ₃ used as the precursor of nitrogen (N), it is necessary to minimize the mixing time in the gas state. To this end, it is common to increase the gas injection rate in general.

However, when the gas injection speed is increased, turbulence due to gas flow may occur, which may inadvertently rotate a substrate having a concave shape warp at a high temperature. This leads to a problem that it is not easy to analyze the thin film characteristics in the substrate after the growth ends. In addition, a substrate having a flat surface is used instead of a general circular substrate. In this case, pinching may occur when the substrate is rotated.

For example, as shown in FIG. 11, when the substrate W is rotated in the receiving groove 510 of the susceptor, the flat surface Wf of the substrate W and the substrate W are rotated. The corner region Wc where the circumferential surface Ws meets the flat portion 512 of the accommodation groove 510 so that the corner region Wc of the substrate W may be caught inside the accommodation groove 510. . In particular, when the substrate W expands due to the high temperature inside the chamber, the above-described pinching phenomenon may be intensified, and in severe cases, the substrate W may be damaged or the susceptor may be broken.

The present invention, in order to solve the above problems, when the substrate is seated in the receiving groove of the substrate support, the organic metal that can prevent the substrate is inclined due to the particles that can be formed in the receiving groove, etc. An object is to provide a chemical vapor deposition apparatus.

The present invention, in order to solve the above problems, when the substrate is seated in the receiving groove of the substrate support to prevent the rotation of the substrate to prevent the metal from being caught or damaged in the receiving groove of the organometallic chemistry It is an object to provide a vapor deposition apparatus.

An object of the present invention as described above is provided with a chamber that provides a processing space in which a substrate is processed, a gas supply unit for supplying a process gas into the chamber, and an accommodation groove provided in the chamber to seat the substrate and the substrate And a substrate supporting part for heating the substrate, wherein an organic metal chemical vapor deposition apparatus is provided with a seating part in which the substrate is seated inside the receiving groove, and an intermediate groove is formed between an edge of the seating portion and the receiving groove. Is achieved.

Here, the seating portion may be formed flat on the upper surface.

In this case, when the substrate is seated on the seating portion, the width of the intermediate groove may be covered by 60% to 95% by the substrate.

In addition, the intermediate groove may be formed in an angled corner of the inside. In this case, the width of the intermediate groove may be 1 to 3mm.

On the other hand, the depth of the intermediate groove on the upper surface of the seating portion may be 40 to 80% of the depth of the intermediate groove on the upper surface of the substrate support.

Further, the substrate may have a flat surface at least partially along a circular circumferential surface, and may include a protrusion that protrudes inwardly from an edge of the receiving groove to prevent rotation of the substrate.

In this case, the flat surface of the substrate may meet the protrusion. In this case, the corner region where the circumferential surface and the flat surface of the substrate meet does not meet the protrusion.

Meanwhile, the circumferential angle of the protrusion relative to the center of the seating portion may be relatively smaller than the circumferential angle of the flat surface of the substrate with respect to the center of the seating portion.

Furthermore, the protrusion may be detachably provided.

On the other hand, the substrate support portion includes a heater block on which the substrate is seated and heated, the insertion groove is formed from the bottom of the heater block toward the upper portion, the inside of the insertion groove is provided with a thermocouple for measuring the temperature of the heater block Can be.

In addition, the height of the insertion groove in the bottom of the heater block may be 60 to 90% of the height of the heater block.

According to the present invention having the above-described configuration, by forming an intermediate groove between the seating portion in which the substrate is seated in the receiving groove of the substrate support and the inner surface of the receiving groove to induce foreign matter such as particles to be formed in the intermediate groove, When disposed in the receiving groove can be prevented from being disposed inclined.

In addition, according to the present invention by providing a protrusion along the inner edge of the receiving groove in which the substrate is seated to prevent the rotation of the substrate can be prevented from being caught or damaged inside the receiving groove.

1 is a cross-sectional view showing the structure of an organometallic chemical vapor deposition apparatus according to an embodiment of the present invention,

2 is a plan view of the substrate support;

3 is a partial cross-sectional view of the substrate support;

4 to 8 is a plan view showing various embodiments of the protrusion formed in the receiving groove of the substrate support;

9 is a sectional view showing the internal structure of the substrate support;

10 is a cross-sectional view of the substrate support of the conventional apparatus,

11 is a plan view of a substrate support of the conventional apparatus.

Hereinafter, an organic metal chemical vapor deposition apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing the structure of an organometallic chemical vapor deposition apparatus 1000 according to an embodiment of the present invention.

Referring to FIG. 1, the organometallic chemical vapor deposition apparatus 1000 includes a chamber 10, a substrate support 20, a gas supply unit 30, and a reaction space forming unit 40.

The chamber 10 includes a chamber lead 11 covering an upper portion of the chamber, an outer wall portion 12 fastened to the chamber lead 11 and covering a side of the chamber, and a bottom flange portion forming a lower bottom surface of the chamber. (13) is provided.

The chamber lead 11 may be detachably fastened to the outer wall portion 12 through fastening means such as bolts, and the cooling chamber 11a may be formed in the chamber lead 11. The cooling passage 11a is configured to flow a cooling medium such as a cooling water or a cooling gas, and is configured to cool the chamber 10 heated by the high temperature heat generated in the deposition process in the chamber 10.

In addition, the chamber lead 11 includes a sensor tube 52 serving as an optical measuring passage of the optical sensor 51 for optically measuring a thin film deposited on a substrate in the reaction space forming unit 40 to be described later. It is installed. Here, the sensor tube 52 is configured to introduce a purge gas to prevent the reaction gas from being discharged from the reaction space forming unit 40 to the sensor tube 52.

The outer wall portion 12 is fastened to the chamber lead 11 and is configured to cover the side of the chamber 10. An exhaust hole 14 is formed in the outer wall part 12, and the exhaust hole 14 is connected to a gas exhaust line (not shown), and remains in the reaction space forming unit 40 after completion of the deposition process. It is configured to discharge the reaction gas to the outside of the chamber 10 through the exhaust hole 14 and the gas exhaust line (not shown).

In addition, an inner wall portion 12a may be further provided inside the outer wall portion 12. The reaction space forming unit 40 is inserted into and installed in the inner wall portion 12a, and the reaction space forming unit 40 is configured to be stably installed.

The bottom flange 13 is provided below the chamber 10. A cooling passage 13a may be formed in the bottom flange portion 13. The cooling channel 13a is configured to flow a cooling medium such as a cooling water or a cooling gas, and is configured to cool the chamber 10 heated by the high temperature heat generated in the deposition process in the chamber 10.

The substrate support 20 on which the substrate W is seated is disposed in the chamber. The substrate support unit 20 includes a heater block 21 on which the substrate W is seated and heated, a shaft 22 supporting and rotating the heater block 21, a sealing unit 23, and the heater. Induction heating unit 24 for heating the block 21 is included.

The heater block 21 is provided with a plurality of receiving grooves 210, 220, and 230 (see FIG. 2) so that the plurality of substrates W may be seated on the upper surface.

One end of the shaft 22 is connected to the heater block 21, and the other end of the shaft 22 penetrates the bottom flange 13 of the chamber 10 to be disposed outside the chamber 10. It is connected to (not shown), it is configured to rotate while supporting the heater block 21. A thermocouple 22a is installed inside the shaft 22 to measure and control the temperature of the heater block 21 heated by the induction heating unit 24. The configuration in which the thermocouple 22a is disposed inside the heater block 21 will be described in detail later.

A sealing portion 23 is provided between the shaft 22 and the bottom flange portion 13 of the chamber 10 to seal a space between the rotating shaft 22 and the bottom flange portion 13. It is composed. The sealing portion 23 is filled with a fluid seal, in the present embodiment, the fluid seal may be composed of a magnetic fluid seal to hermetically seal the voids with the outside by the magnetic force of the magnetic.

In addition, an upper portion of the sealing portion 23 surrounds the shaft 22 to prevent high temperature heat generated during the deposition process from being transferred to the chamber 10 and the sealing portion 23 ( 26) can be installed.

Meanwhile, the induction heating unit 24 is formed of, for example, an induction coil surrounding the heater block 21, and is configured to heat the heater block 21 disposed inside the induction heating unit 24. do. A thermal barrier 25 may be provided between the induction heating unit 24 and the heater block 21. The thermal barrier 25 not only prevents the high temperature heat of the heater block 21 heated by the induction heating unit 24 from being transferred into the chamber 10 but also the induction heating unit 24. In addition, the heater block 21 may be protected from high temperature heat. In the present embodiment, the thermal barrier 25 may be formed of, for example, a ceramic material which is stable at high temperature and has high heat reflectivity.

On the other hand, the gas supply unit 30 is installed on one side of the chamber. The gas supply unit 30 includes a plurality of gas supply ports (not shown) connected to a plurality of gas supply lines (not shown), and the plurality of gas supply lines process a plurality of gas supply sources (not shown). Gas is supplied.

Meanwhile, the organometallic chemical vapor deposition apparatus 1000 according to the present invention includes a reaction space forming unit 40 installed inside the chamber 10.

The reaction space forming unit 40 includes an upper plate 41 installed at a side corresponding to the chamber lead, a side plate (not shown), and a lower plate 43 installed at a side corresponding to the substrate support. The side in which the reaction gas is supplied to the reaction space forming unit and the side in communication with the exhaust hole are opened.

One side of the reaction space forming unit 40 is coupled to the gas supply unit 30 through the inner wall portion of the chamber 10, the other side is configured to communicate with the exhaust hole 14 formed in the outer wall portion 12 do.

A heat shielding lead 44 may be installed on the upper plate 41 of the reaction space forming unit. The heat shield 44 is installed at a position opposite to the heater block 21, is thicker than the upper plate, protrudes toward an upper surface of the heater block 21, and is seated on the heater block 21. The reaction space on the substrate W can be made smaller.

In addition, the heat shield lead 44 is integrally fastened with the upper plate 41, and is detachably configured with the upper plate 41 to facilitate replacement. In addition, the heat shield 44 may be formed of, for example, a ceramic material that is stable at high temperature and has high heat reflectivity.

Since the temperature inside the chamber 10 reaches a high temperature of 1000 ° C. or higher, the thermal barrier 25 surrounding the heater block 21 and the heat shield lead 44 are stably constructed at high temperature by using a ceramic material. . As a result, the thermally sealed lid 44 having a high heat reflectivity can efficiently heat the substrate and reduce power consumption required for heating the substrate. In addition, in the process of growing the thin film on the substrate by the chemical reaction of the deposition process by installing the heat shield in the position where the by-products are concentrated, it is possible to improve the production efficiency by extending the replacement cycle of the parts.

Meanwhile, as described above, the organometallic chemical vapor deposition apparatus according to the present invention prevents the substrate from being inclined due to particles that may be formed in the receiving groove when the substrate is seated in the receiving groove of the substrate support. Configured to do so.

2 is a plan view of the heater block 21, and FIG. 3 is a partial cross-sectional view of the heater block 21. As shown in FIG. 3 (A) shows the receiving groove 210, Figure 3 (B) shows a state in which the substrate (W) is seated in the receiving groove (210).

2 and 3, the organometallic chemical vapor deposition apparatus 1000 according to the present invention includes accommodation grooves 210, 220, and 230 in which the substrate W is accommodated in the heater block 21. . The accommodation grooves 210, 220, 230 are shown in the figure three, but is not limited to this may be appropriately adjusted.

Meanwhile, inside the receiving grooves 210, 220, and 230, seating parts 212, 222, and 232 on which the substrate W is mounted, edges of the seating parts 212, 222, and 232, and the receiving grooves. An intermediate groove 213 may be formed between the 210, 220, and 230.

That is, the substrate W is seated on an upper surface of the seating portions 212, 222, and 232, which protrude to a predetermined length toward the inside of the accommodation grooves 210, 220, and 230, and in this case, the substrate ( The intermediate groove 213 is positioned under the edge region of W).

In this case, the seating portions 212, 222, and 232 have upper surfaces formed flat and the lower surface of the substrate W when the substrate W is seated on the upper surfaces of the mounting portions 212, 222, and 232. And a space between the upper surfaces of the seating parts 212, 222, and 232 does not occur. Since no space is generated between the substrate W and the seating portions 212, 222, and 232, foreign substances, such as particles and powder, may be prevented from being introduced into the process gas.

In addition, the intermediate groove 213 may be formed in an angled corner of the inside as shown in the figure. In this case, the side cross-section of the intermediate groove 213 is formed in an angular shape in a polygonal shape, such as a square, it is very easy to form a groove having a relatively small width compared to the simple round shape without the angular shape. In addition, since the square angled shape has a relatively large surface area inside the intermediate groove 213 as compared to the round shape, the particles are well attached to prevent the particles from leaking to the outside of the intermediate groove 213. Furthermore, the above-described angled edge portion of the intermediate groove 213 may also be expected to hinder the movement of the particles.

As a result, as shown in FIG. 3B, even when the process gas flows into the lower portion of the substrate W, most of the foreign substances such as particles are formed inside the intermediate groove 213. Particularly, as the corners of the intermediate grooves 213 are formed in an angular shape, the particles, etc., may not rise and move along the angled corners, but are collected on the bottom surface of the intermediate grooves 213. Therefore, since particles are not formed on the surface on which the substrate W is seated as in the related art, when the substrate W is seated inside the receiving grooves 210, 220, and 230, the substrate W is The tilt can be prevented.

On the other hand, when the substrate (W) is seated on the upper surface of the seating portion (212, 222, 232) the edge of the substrate (W) is disposed to be as close as possible to the receiving groove (210, 220, 230). That is, the inner diameters of the receiving grooves 210, 220, and 230 are determined to be slightly larger than the outer diameter of the substrate W. In this case, as shown in the drawing, the edge of the substrate W is the intermediate diameter. Most of the width D of the groove 213 is covered. For example, the substrate W may cover 50% or more of the width D of the intermediate groove 213. Preferably, the substrate W may have a width D of the intermediate groove 213. 60% to 95% can be covered. When most of the width D of the intermediate groove 213 is covered by the substrate W, the amount of process gas flowing into the intermediate groove 213 may be reduced, thereby suppressing particle generation.

According to the experiment of the present inventors, the width (D) of the intermediate groove 213, or the distance between the edge of the seating portion (212, 222, 232) and the inner surface of the receiving groove (210, 220, 230) ( D) may be approximately 1-3 mm and approximately 2 mm.

The depth of the middle groove 213 is the depth and (B ₁₎ to the bottom of the intermediate groove (213) on the top surface (21a) of the heater block (21) constituting the substrate support 20, mounted It may be defined as the depth B ₂ from the upper surface of the portion (212, 222, 232) to the bottom of the intermediate groove 213. In this case, the intermediate groove 213 on the upper surface of the seating portion 212, 222, 232 with respect to the depth B ₁ from the upper surface 21a of the heater block 21 to the bottom of the intermediate groove 213. Depth (B ₂ ) to the bottom of the can be made of approximately 40 to 80%.

According to the experiment of the present inventors, when the depth of the intermediate groove 213 is determined as described above, it can be seen that the particle induction effect by the intermediate groove 213 is the best.

On the other hand, the organometallic chemical vapor deposition apparatus according to the present invention is configured to prevent the substrate from being pinched or damaged by the rotation of the substrate when the substrate is seated in the receiving groove of the substrate support. . Hereinafter, look at in detail.

4 to 8 are plan views illustrating various embodiments of protrusions formed in the accommodation grooves 310 of the substrate support 20. That is, in the present embodiment, the substrate W protrudes inward from the edge of the accommodation groove 310 to prevent the substrate W from rotating inside the accommodation groove 310 to prevent rotation of the substrate W. It is provided with a protrusion. In this case, the substrate W has a flat surface Wf at least in part along a circular circumferential surface Ws, and a corner at an area where the circumferential surface Ws and the flat surface Wf of the substrate meet. The region Wc may be formed. 4 to 8, (a) is a plan view of the receiving groove 310, and (b) is an enlarged view of the dotted line area in (a).

Referring to FIG. 4, the protrusion 314 protrudes inward from an edge of the receiving groove 310. In this case, as described above, the flat surface Wf may be formed on at least a portion of the substrate W along the circumference, and the protrusion 314 may be disposed to meet the flat surface Wf.

That is, in the prior art, the corner region of the substrate meets the edge of the receiving groove so that the corner region of the substrate is pinched in the receiving groove. In the present invention, the protrusion 314 is used to solve the above-mentioned problem. The flat surface Wf of the board | substrate W is arrange | positioned so that it may meet. Therefore, in the present invention, the corner region Wc of the substrate W does not meet the protrusion 314, thereby preventing the corner region Wc from being caught in the protrusion 314.

To this end, when the substrate W is seated on the seating portion 312, the circumferential angle θ ₂ of the protrusion 314 with respect to the center C of the seating portion 312 is the seating portion ( It is formed relatively smaller than the circumferential angle θ ₁ of the flat surface Wf of the substrate W with respect to the center C of 312.

If the circumferential angle θ ₂ of the protrusion 314 with respect to the center C of the seating portion 312 is the flat surface of the substrate W with respect to the center C of the seating portion 312 If it is relatively larger than the circumferential angle θ ₁ of Wf, the corner area Wc of the substrate W and the protrusion 314 may not be prevented from meeting. In this case, as described above, the corner region Wc of the substrate W may be caught in the protrusion 314.

Accordingly, in the present invention, the circumferential angle of the protrusion 314 with respect to the center C of the seating portion 312 in order to prevent the corner region Wc of the substrate W from being caught in the protrusion 314. The degree θ ₂ is formed to be relatively smaller than the circumferential angle θ ₁ of the flat surface Wf of the substrate W with respect to the center C of the seating portion 312.

On the other hand, the organometallic chemical vapor deposition apparatus 1000 according to the present invention is supplied with a process gas from the side of the substrate (W). When the process gas is supplied from above or below the substrate W, the substrate W does not rotate. However, when the process gas is supplied from the side surface of the substrate W as in the present invention, the substrate W is Can rotate In particular, when the gas injection speed of the process gas is increased to suppress parasitic reactions between the process gases, the substrate W is more easily rotated.

Therefore, in the organometallic chemical vapor deposition apparatus 1000 according to the present invention, even when the process gas is supplied from the side surface of the substrate W, the flat surface Wf is used instead of the corner region Wc of the substrate W. At least a portion of the substrate 314 may meet the protrusion 314 to prevent rotation of the substrate W as much as possible, and may further prevent the corner region Wc of the substrate W from being caught in the protrusion 314. In addition, the corner region Wc where the circumferential surface Ws of the substrate W and the flat surface Wf meet is vulnerable to damage or damage. In the present invention, the corner region Wc is the protruding portion 314. The protrusion 314 may be disposed so as not to contact the substrate 314 so as to prevent damage or damage to the substrate W as much as possible.

Meanwhile, the width of the intermediate groove 213 or the distance between the edge of the seating portion 312 and the inner surface of the receiving groove 310 is changed by the protrusion 314.

The width d ₂ of the intermediate groove 213 in the region without the protrusion 314 forms approximately 1 to 3 mm as described above, whereas the intermediate groove 213 is formed in the region where the protrusion 314 is formed. The width d ₁ of is smaller than the width d ₂ described above. In the region where the protrusion 314 is formed, the width d _{1 of the} intermediate groove 213 may correspond to about half of the width d ₂ of the intermediate groove 213 having no protrusion 314. In this case, the width d ₁ of the intermediate groove 213 is kept constant in the region where the protrusion 314 is formed.

4 may prevent rotation of the substrate W. However, when the substrate W meets the protrusion 314, the surface of the protrusion 314 and the substrate W may not be rotated. Since the edges meet, the effect of preventing jamming is low. In addition, the durability of the protrusion 314 has a relatively weak characteristic.

5 illustrates a protrusion 324 according to another embodiment.

Referring to FIG. 5, the protrusion 324 protrudes inward from an edge of the receiving groove 310. The shape of the protrusion 324 according to FIG. 5 is similar to the shape of the protrusion of FIG. 4 described above, but there are differences in the width and the length of the protrusion.

That is, in the present embodiment, the width d ₂ of the intermediate groove 213 in the region without the protrusion 324 forms approximately 1 to 3 mm as described above, whereas in the region where the protrusion 324 is formed, The width d ₃ of the intermediate groove 213 is relatively smaller than the width d ₂ described above, and may correspond to about 20 to 40%. That is, the protrusion 324 of the present exemplary embodiment may protrude relatively more than the protrusion of FIG. 4. On the other hand, the length of the protrusion 324 in the circumferential direction of the receiving groove 310 may be configured to be relatively smaller than the above-described protrusion 314 of FIG.

In the configuration according to FIG. 5, when the substrate W meets the protrusion 324, the surface of the protrusion 324 meets the surface of the substrate W when the substrate W meets the protrusion 324. The degree is reduced, in particular, the degree to which the durability of the protrusion 324 is significantly improved. However, since the width d ₃ of the intermediate groove 213 is relatively small in the region where the protrusion 324 is formed, the convenience of loading / unloading of the substrate or the temperature gradient characteristic of keeping the temperature of the substrate constant are illustrated. It has similar characteristics to 4.

On the other hand, similarly to the above-described embodiment of the protrusion 324 according to FIG. 5, when the substrate W is seated on the seating portion 312, the center C of the seating portion 312 may be adjusted. The circumferential angle θ ₃ of the protrusion 324 is formed to be smaller than the circumferential angle θ ₁ of the flat surface Wf of the substrate W with respect to the center C of the seating portion 312. do. Since it has been described above, a repeated description thereof will be omitted.

6 illustrates a protrusion 334 according to another embodiment.

Referring to FIG. 6, the protrusion 334 according to the present exemplary embodiment may have a shape that protrudes in parallel when protruding from the inner side of the edge of the receiving groove 310. That is, the distance between the protrusion 334 and the seating portion 312 is not constant as shown in the figure and is constantly changing.

In the case of the embodiment according to FIG. 6, the width of the intermediate groove 213 is relatively smaller in the region in which the protrusion 334 is formed than in FIGS. 4 and 5, so that the loading / unloading convenience of the substrate is somewhat low. Temperature gradient characteristics are significantly improved. In addition, when the substrate W meets the protrusion 334, the surface of the protrusion 334 and the surface of the substrate W meet, thereby reducing the pinching of the substrate and improving durability of the protrusion. Indicates.

On the other hand, similarly to the above-described embodiment for the protrusion 334 according to FIG. 6, when the substrate W is seated on the seating portion 312, the center portion C of the seating portion 312 may be adjusted. The circumferential angle θ ₄ of the protrusion 334 is relatively smaller than the circumferential angle θ ₁ of the flat surface Wf of the substrate W with respect to the center C of the seating portion 312. do. Since it has been described above, a repeated description thereof will be omitted.

On the other hand, Figure 7 shows the configuration of the protrusions 354, 356 according to another embodiment.

Referring to FIG. 7, a pair of protrusions 354 and 356 according to the present exemplary embodiment may be provided along the inner edge of the receiving groove 310.

The protrusions 354 and 356 are spaced apart from each other by a predetermined distance along the inner edge of the receiving groove 310, and the protrusions 354 and 356 have a semi-circle shape having a predetermined radius, or a curved shape, It protrudes in a curved shape or the like.

In this case, the loading / unloading characteristics of the substrate are relatively improved since the area in which the protrusions 354 and 356 are formed is relatively small compared with the above-described embodiments. In addition, when the substrate W meets the protrusions 354 and 356, the surface of the protrusions 354 and 356 and the surface of the substrate W meet to prevent the pinching of the substrate, but the protrusions are relatively. The durability of the substrate decreases and the distance between the outer circumferential surface of the substrate and the heater block 21 becomes farther, resulting in a worse temperature gradient characteristic of the substrate.

Meanwhile, even when the pair of protrusions 354 and 356 are provided as illustrated in FIG. 7, when the substrate W is seated on the seating portion 312, the center C of the seating portion 312 may not be formed. in Fig wonjugak of projections (354, 356) of the pair (θ ₅₎ are also wonjugak of the flat surface (Wf) of the substrate (W) relative to the center (C) of the seating unit (312), (θ ₁₎ It is formed relatively smaller in comparison. Since it has been described above, a repeated description thereof will be omitted.

8 illustrates a configuration of the protrusions 344 and 346 according to another embodiment.

Referring to FIG. 8, the protrusions 344 and 346 according to the present embodiment are provided with a pair similar to the embodiment of FIG. 7 described above. However, each of the protrusions 344 and 346 according to the present exemplary embodiment is configured such that when the protrusions 344 and 346 protrude from the edge of the receiving groove 310, the lengths of both surfaces forming the protrusions 344 and 346 are different from each other.

That is, as shown in the figure, the first face 344A of the first protrusion 344 is configured to be longer than the second face 344B, and likewise, the third face 346A of the second protrusion 346. Is configured to be longer than the fourth surface 346B. In addition, the first surface 344A of the first protrusion 344 and the third surface 346A of the second protrusion 346 may be disposed along an imaginary line.

In this case, the loading / unloading characteristics of the substrate are relatively improved because the area in which the protrusions 344 and 346 are formed is relatively small compared with the above-described embodiments. In addition, when the substrate W meets the protrusions 344 and 346, the surface of the protrusions 344 and 346 and the surface of the substrate W meet to prevent the jamming of the substrate and to improve durability. You lose.

Meanwhile, even when the pair of protrusions 344 and 346 are provided as shown in FIG. 8, when the substrate W is seated on the seating portion 312, the center C of the seating portion 312 may be removed. The circumferential angle θ ₆ of the pair of protrusions 344 and 346 is at the circumferential angle θ ₁ of the flat surface Wf of the substrate W with respect to the center C of the seating portion 312. It is formed relatively smaller in comparison. Since it has been described above, a repeated description thereof will be omitted.

On the other hand, although the configuration of the above-described protrusions according to FIGS. 4 to 8 may be integrally formed in the receiving groove, the protrusions may be detachably provided. In this case, the protrusion may be made of a material different from that of the block heater. For example, the protrusion may be made of a material that is relatively superior in durability and heat resistant to the heater block. Thus, when the said protrusion part is comprised so that attachment or detachment is possible, it becomes possible to repair easily in a quick time, when repairing a board | substrate support part etc. in the future.

On the other hand, as described above, the inside of the heater block 21 of the substrate support 20 is provided with a thermocouple 22a for measuring the temperature of the heater block 21. 9 is a cross-sectional view showing the internal configuration of the heater block 21.

Referring to FIG. 9, an insertion groove 29 is formed from the bottom of the heater block 21 toward the top to mount the thermocouple 22a, and the thermocouple 22a is formed inside the insertion groove 29. Is provided. In Fig. 9, reference numeral 22 denotes a shaft.

In this case, the thermocouple 22a may infer the temperature of the substrate W heated by the heater block 21 by measuring the temperature of the heater block 21. Therefore, it may be advantageous that the thermocouple 22a is disposed adjacent to the substrate W inside the heater block 21. However, for this arrangement, the height h ₂ of the insertion groove 29 measured at the bottom of the heater block 21 is approximately equal to the height h ₁ of the heater block 21, or 90 When determined to be about% or more, the thermal energy for heating the substrate (W) may be discharged to the outside of the chamber 10 through the insertion groove (29). This may lower the heating efficiency of the substrate W and may lower the quality of the thin film deposited on the substrate W. In addition, when the height h ₂ of the insertion groove 29 at the bottom of the heater block 21 is determined to be 60% or less than the height h ₁ of the heater block 21, the top surface of the heater block on which the wafer is seated This is different from the temperature of, so it is not suitable as a process feedback temperature.

Therefore, in the present embodiment, the height h ₂ of the insertion groove 29 at the bottom of the heater block 21 is determined to be about 60 to 90% of the height h ₁ of the heater block 21. , Preferably about 75%.

In this configuration, since the height h ₂ of the insertion groove 29 is about 90% or less than the height h ₁ of the heater block 21, the thermal energy for heating the substrate W is the insertion groove. The discharge through (29) can be suppressed. In addition, the thermocouple 22a is provided not to contact the upper surface of the insertion groove 29 from the inside of the insertion groove 29 as shown in the figure. Therefore, even when the heater block 21 rotates, the damage of the thermocouple 22a can be prevented. Furthermore, since the thermocouple 22a is disposed inside the insertion groove 29 to measure the temperature of the heater block 21, when the environment of the upper portion of the substrate W is changed, for example, The temperature of the heater block 21 may be accurately measured in a state in which it does not change sensitively according to environmental changes such as change, pressure change, and temperature change.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art to various modifications and changes to the present invention without departing from the spirit and scope of the invention described in the claims described below You can do it. Therefore, it should be seen that all modifications included in the technical scope of the present invention are basically included in the scope of the claims of the present invention.

According to the present invention, by forming an intermediate groove between the seating portion on which the substrate is seated in the receiving groove of the substrate support and the inner surface of the receiving groove, foreign matters such as particles are formed in the intermediate groove, so that the substrate is disposed in the receiving groove. If it is, it can be prevented from being placed inclined.

In addition, according to the present invention by providing a protrusion along the inner edge of the receiving groove in which the substrate is seated to prevent the rotation of the substrate can be prevented from being caught or damaged inside the receiving groove.

Claims (13)

1. A chamber providing a processing space in which the substrate is processed;

   A gas supply unit supplying a process gas into the chamber; And

   A substrate support part provided in the chamber and having a receiving groove in which the substrate is seated and heating the substrate;

   An organometallic chemical vapor deposition apparatus, characterized in that the mounting portion on which the substrate is mounted inside the receiving groove, and an intermediate groove formed between the edge of the mounting portion and the receiving groove.
2. The method of claim 1,

   Organometallic chemical vapor deposition apparatus, characterized in that the seating portion is formed flat on the upper surface.
3. The method of claim 1,

   When the substrate is seated on the seating portion, the organic metal chemical vapor deposition apparatus, characterized in that the width of the intermediate groove is covered by the substrate 60% to 95%.
4. The method of claim 1,

   The intermediate groove is an organometallic chemical vapor deposition apparatus, characterized in that the inner corner is formed in an angular form.
5. The method of claim 1,

   Organometallic chemical vapor deposition apparatus, characterized in that the width of the intermediate groove is 1 to 3mm.
6. The method of claim 5,

   The depth of the intermediate groove in the upper surface of the seating portion is organic metal chemical vapor deposition apparatus, characterized in that 40 to 80% of the depth of the intermediate groove on the upper surface of the substrate support.
7. The method of claim 1,

   The substrate has an organic metal chemical vapor deposition apparatus having a flat surface on at least a portion along a circular circumferential surface and protruding inwardly from the edge of the receiving groove to prevent rotation of the substrate. .
8. The method of claim 8,

   Organometallic chemical vapor deposition apparatus, characterized in that the flat surface of the substrate meets the protrusion.
9. The method of claim 8,

   And a corner region where the circumferential surface and the flat surface of the substrate meet each other does not meet the protrusion.
10. The method of claim 9,

    The circumferential angle of the protrusion relative to the center of the seating portion is relatively smaller than the circumferential angle of the flat surface of the substrate relative to the center of the seating portion.
11. The method of claim 7, wherein

    Organometallic chemical vapor deposition apparatus, characterized in that the protrusion is detachably provided.
12. The method of claim 1,

    The substrate support portion includes a heater block on which the substrate is seated and heated,

    An insertion groove is formed from the bottom of the heater block toward the top, and the inside of the insertion groove is an organometallic chemical vapor deposition apparatus, characterized in that the thermocouple for measuring the temperature of the heater block is provided.
13. The method of claim 12,

    The height of the insertion groove in the bottom of the heater block is an organometallic chemical vapor deposition apparatus, characterized in that 60 to 90% of the height of the heater block.

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