WO2018105775A1 - Indazole compound and organic light emitting device comprising same - Google Patents
Indazole compound and organic light emitting device comprising same Download PDFInfo
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- WO2018105775A1 WO2018105775A1 PCT/KR2016/014305 KR2016014305W WO2018105775A1 WO 2018105775 A1 WO2018105775 A1 WO 2018105775A1 KR 2016014305 W KR2016014305 W KR 2016014305W WO 2018105775 A1 WO2018105775 A1 WO 2018105775A1
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- light emitting
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- organic light
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- -1 Indazole compound Chemical class 0.000 title claims abstract description 53
- 239000012044 organic layer Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 82
- 150000001875 compounds Chemical class 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 239000011368 organic material Substances 0.000 claims description 7
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 4
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 125000005036 alkoxyphenyl group Chemical group 0.000 claims description 3
- 125000005037 alkyl phenyl group Chemical group 0.000 claims description 3
- 125000006383 alkylpyridyl group Chemical group 0.000 claims description 3
- 125000005264 aryl amine group Chemical group 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 125000000499 benzofuranyl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 claims description 3
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 claims description 3
- 235000010290 biphenyl Nutrition 0.000 claims description 3
- 239000004305 biphenyl Substances 0.000 claims description 3
- 125000004623 carbolinyl group Chemical group 0.000 claims description 3
- 125000004802 cyanophenyl group Chemical group 0.000 claims description 3
- 125000005509 dibenzothiophenyl group Chemical group 0.000 claims description 3
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 3
- 125000006485 halo alkoxy phenyl group Chemical group 0.000 claims description 3
- 125000005059 halophenyl group Chemical group 0.000 claims description 3
- 125000006377 halopyridyl group Chemical group 0.000 claims description 3
- 125000001072 heteroaryl group Chemical group 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000002883 imidazolyl group Chemical group 0.000 claims description 3
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 claims description 3
- 125000001624 naphthyl group Chemical group 0.000 claims description 3
- 125000004593 naphthyridinyl group Chemical group N1=C(C=CC2=CC=CN=C12)* 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 125000003373 pyrazinyl group Chemical group 0.000 claims description 3
- 125000004076 pyridyl group Chemical group 0.000 claims description 3
- 125000000714 pyrimidinyl group Chemical group 0.000 claims description 3
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 claims description 3
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 claims description 3
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 claims description 3
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 229910052783 alkali metal Inorganic materials 0.000 description 8
- 150000001340 alkali metals Chemical class 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010992 reflux Methods 0.000 description 8
- 238000004440 column chromatography Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005481 NMR spectroscopy Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- RVPCPPWNSMAZKR-UHFFFAOYSA-N (10-phenylanthracen-9-yl)boronic acid Chemical compound C12=CC=CC=C2C(B(O)O)=C2C=CC=CC2=C1C1=CC=CC=C1 RVPCPPWNSMAZKR-UHFFFAOYSA-N 0.000 description 1
- SFUIGUOONHIVLG-UHFFFAOYSA-N (2-nitrophenyl)boronic acid Chemical compound OB(O)C1=CC=CC=C1[N+]([O-])=O SFUIGUOONHIVLG-UHFFFAOYSA-N 0.000 description 1
- XPEIJWZLPWNNOK-UHFFFAOYSA-N (4-phenylphenyl)boronic acid Chemical compound C1=CC(B(O)O)=CC=C1C1=CC=CC=C1 XPEIJWZLPWNNOK-UHFFFAOYSA-N 0.000 description 1
- RUJTWTUYVOEEFW-UHFFFAOYSA-N 1-(6-bromopyridin-2-yl)ethanone Chemical compound CC(=O)C1=CC=CC(Br)=N1 RUJTWTUYVOEEFW-UHFFFAOYSA-N 0.000 description 1
- HWZJQLSBBQLPAJ-UHFFFAOYSA-N 1h-pyrazolo[3,4-f]quinoline Chemical compound C1=CC2=NC=CC=C2C2=C1C=NN2 HWZJQLSBBQLPAJ-UHFFFAOYSA-N 0.000 description 1
- BVKRPQCDGACLPX-UHFFFAOYSA-N 2-[4-[4-(aminomethyl)-6-(trifluoromethyl)pyridin-2-yl]oxyindol-1-yl]-N-methyl-N-phenylacetamide Chemical compound NCC1=CC(=NC(=C1)C(F)(F)F)OC1=C2C=CN(C2=CC=C1)CC(=O)N(C1=CC=CC=C1)C BVKRPQCDGACLPX-UHFFFAOYSA-N 0.000 description 1
- ZZVUOSVSPAPBEJ-UHFFFAOYSA-N 2-amino-4-bromobenzaldehyde Chemical compound NC1=CC(Br)=CC=C1C=O ZZVUOSVSPAPBEJ-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- DVLLMPLACXRDOE-UHFFFAOYSA-N 5-[4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl]pyrimidine Chemical compound O1C(C)(C)C(C)(C)OB1C1=CC=C(C=2C=NC=NC=2)C=C1 DVLLMPLACXRDOE-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 1
- BBEAQIROQSPTKN-UHFFFAOYSA-N antipyrene Natural products C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002473 indoazoles Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- AICOOMRHRUFYCM-ZRRPKQBOSA-N oxazine, 1 Chemical compound C([C@@H]1[C@H](C(C[C@]2(C)[C@@H]([C@H](C)N(C)C)[C@H](O)C[C@]21C)=O)CC1=CC2)C[C@H]1[C@@]1(C)[C@H]2N=C(C(C)C)OC1 AICOOMRHRUFYCM-ZRRPKQBOSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D215/00—Heterocyclic compounds containing quinoline or hydrogenated quinoline ring systems
- C07D215/02—Heterocyclic compounds containing quinoline or hydrogenated quinoline ring systems having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen atoms or carbon atoms directly attached to the ring nitrogen atom
- C07D215/04—Heterocyclic compounds containing quinoline or hydrogenated quinoline ring systems having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen atoms or carbon atoms directly attached to the ring nitrogen atom with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, directly attached to the ring carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D401/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom
- C07D401/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, at least one ring being a six-membered ring with only one nitrogen atom containing three or more hetero rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D403/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00
- C07D403/14—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing three or more hetero rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/04—Ortho-condensed systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
Definitions
- the present invention relates to an indazole compound and an organic light emitting device comprising the same.
- the organic light emitting device is a device for converting electrical energy into light energy using an organic material, and includes a structure in which a light emitting organic material layer is formed between an anode and a cathode.
- the organic light emitting device may be formed in various structures, among which a tandem organic light emitting device in which a plurality of light emitting parts are stacked is studied.
- a tandem organic light emitting device a plurality of light emitting parts including a light emitting layer are stacked between an anode and a cathode.
- a charge generation layer for generating and moving charges is positioned between adjacent light emitting units.
- the charge generation layer requires low driving voltage and high efficiency.
- Another object of the present invention is to minimize the energy level difference between the n-type charge generation layer and the p-type charge generation layer in the tandem organic light emitting device to improve the amount of electron injection in the light emitting portion and the organic light emitting comprising the same It is to provide an element.
- Still another object of the present invention is to provide an indazole compound capable of minimizing the diffusion of alkali metal into the p-type charge generation layer even when the n-type charge generation layer is doped with an alkali metal, and an organic light emitting device including the same. It is.
- R 1 and R 2 are hydrogen or unsubstituted or unsubstituted 5 to 60 containing one or more heteroatoms selected from aryl groups having 3 to 60 carbon atoms, nitrogen, oxygen and sulfur.
- a membered heteroaryl group, an arylamine group, or a secondary amine group, X 1 and X 2 are selected from nitrogen or carbon, and at least one of X 1 and X 2 is nitrogen.
- the indazole compound may be represented by the following formula (2).
- X 3 may be selected from nitrogen or carbon.
- R 1 and R 2 are each independently hydrogen, substituted or unsubstituted phenyl, alkylphenyl, biphenyl, alkylbiphenyl, halophenyl, alkoxyphenyl, haloalkoxyphenyl, cyanophenyl, silylphenyl, naphthyl, alkyl Naphthyl, halonaphthyl, cyanonaphthyl, silylnaphthyl, pyridyl, alkylpyridyl, halopyridyl, cyanopyridyl, alkoxypyridyl, silylpyridyl, pyrimidyl, halopyrimidyl, cyanopyri Midyl, alkoxypyrimidyl, quinolinyl, isoquinolinyl, quinoxalinyl, pyrazinyl, quinazolinyl, naphthy
- the object of the present invention is a first electrode; Second electrode; And an organic material layer disposed between the first electrode and the second electrode and emitting light, wherein the organic material layer is formed of a plurality of layers, and at least one layer is achieved by an organic light emitting device including the indazole compound. do.
- the at least one layer may include a charge generation layer (CGL).
- CGL charge generation layer
- the charge generation layer CGL may be n-type.
- the at least one layer may include an electron transport layer.
- the object of the present invention is a first electrode; Second electrode; And a first light emitting part disposed between the first electrode and the second electrode and including a first light emitting layer.
- a second light emitting part disposed between the second electrode and the first light emitting part and including a second light emitting layer; And a charge generating layer positioned between the first light emitting portion and the second light emitting portion, wherein the charge generating layer is achieved by an organic light emitting device including the indazole compound.
- an indazole compound of a novel structure is provided.
- an indazole compound capable of improving the driving voltage and efficiency by improving the electron injection amount in the light emitting part by minimizing the energy level difference between the n-type charge generation layer and the p-type charge generation layer and an organic light emitting device comprising the same Is provided.
- the alkali metal is tightly coordinated with an indazole compound which is a host material to minimize diffusion of the alkali metal into the p-type charge generation layer.
- an indazole compound capable of improving lifespan and an organic light emitting device comprising the same.
- FIG. 1 is a cross-sectional view of an organic light emitting diode according to an embodiment of the present invention.
- the indazole compound according to the present invention is represented by the formula (1) or (2).
- Formula (I) and R 1 and R 2 are hydrogen, a substituted or non-substituted C 3 -C 60 aryl group, to 5 won unsubstituted or substituted, which contain one or more heteroatoms selected from nitrogen, oxygen and sulfur in the general formula (2)
- a 60-membered heteroaryl group, an arylamine group, or a secondary amine group is represented.
- X 1, X 2 and X 3 are selected from nitrogen or carbon, and at least one of X 1 and X 2 is nitrogen.
- R 1 and R 2 are each independently hydrogen, substituted or unsubstituted phenyl, alkylphenyl, biphenyl, alkylbiphenyl, halophenyl, alkoxyphenyl, haloalkoxyphenyl, cyanophenyl, silylphenyl, naphthyl, alkyl Naphthyl, halonaphthyl, cyanonaphthyl, silylnaphthyl, pyridyl, alkylpyridyl, halopyridyl, cyanopyridyl, alkoxypyridyl, silylpyridyl, pyrimidyl, halopyrimidyl, cyanopyri Midyl, alkoxypyrimidyl, quinolinyl, isoquinolinyl, quinoxalinyl, pyrazinyl, quinazolinyl, naphthy
- the indazole compound according to the present invention may be a compound shown below.
- the organic light emitting diode 1 is a cross-sectional view of an organic light emitting diode according to an embodiment of the present invention.
- the organic light emitting diode 1 has a tandem type structure, and includes a first electrode (anode 110), a second electrode (cathode 120), a first light emitter 210, and a second light emitter 220. And a charge generation layer 230.
- the first light emitting unit 210, the second light emitting unit 220, and the charge generation layer 230 are positioned between the first electrode 110 and the second electrode 120 as an organic layer, and the charge generation layer 230 is Located between the first light emitting unit 210 and the second light emitting unit 220.
- the first light emitting part 210 includes a hole injection layer 211, a first hole transporting layer 212, a first light emitting layer 213, and a first electron transporting layer 214, and the second light emitting part 220 is formed of a first light emitting part 220.
- the charge generation layer 230 includes an n-type charge generation layer 231 and a p-type charge generation layer 232.
- the n-type charge generation layer 231 may be doped with an alkali metal.
- the indazole compound according to the present invention may be used in the first electron transport layer 212, the second electron transport layer 223, and the charge generation layer 230, and in particular, may be used in the n-type charge generation layer 231. .
- the organic light emitting device 1 described above can be variously modified. Some organic layers may be omitted or added, may not be tandem, or may be tandem having three or more light emitting layers.
- substrate After patterning the ITO board
- HAT-CN compound was vacuum deposited to form a 5 nm thick. This compound acts as a hole transport layer.
- An NPB material was formed to a thickness of 35 nm as a hole transport layer thereon.
- a CBP material was used as a host, and an Ir compound was co-deposited at a thickness of 30 nm to form a dopant of about 10% by mass to form a yellow light emitting layer.
- the first electron transport layer was formed on the light emitting layer with a TmPyPB compound having a thickness of 25 nm. Subsequently, a second electron transport layer was formed by co-depositing a Li material on the BPhen material to a thickness of 10 nm to have a 2% mass ratio. Thereafter, Al was deposited to a thickness of 100 nm to form a cathode to fabricate an organic EL device.
- the organic light emitting device was manufactured by the same method as the comparative example described above, but replacing only the second electron transport material with 1-69 compound.
- the organic light emitting device was fabricated in the same manner as the comparative example described above, but replacing only the second electron transport material with a 1-24 compound.
- the organic light emitting device was manufactured by the same method as the comparative example described above, but replacing only the second electron transport material with a 1-38 compound.
- the organic light emitting device was fabricated in the same manner as the comparative example described above, except that only the second electron transport material was converted into a 1-64 compound.
- low-voltage high-efficiency driving is realized through electrical doping of the charge transport layer in the OLED structure.
- the P doping layer is doped with an electron-lean organic material or metal oxide in the hole transport material
- the N doping layer is doped with an alkali metal such as lithium or cesium having a low work function in the electron transport material.
- the doped layer reduces the surface resistance of the organic material during operation to facilitate charge injection from adjacent layers.
- the introduction of a buffer layer on the doped anode layer realizes low voltage by energy banding and a low voltage driving technique using a material having high charge mobility, and has obtained high efficiency by manufacturing a fluorescent and phosphorescent material in a laminated structure.
- Tandem structure is a structure in which the EL units including the doped hole transport layer and the electron transport layer are vertically stacked, and the current luminous efficiency increases in proportion to the number of stacked layers.
- the CGL (change generation layer) layer is a concept of a transparent PN junction, and can be understood as a concept in which a unit PIN OLED light emitting unit is stacked in a plurality of layers. Therefore, even a single layer PIN OLED embodiment can predict the efficiency and voltage of the stack structure.
- the driving voltage of the embodiment is lower than that of the comparative example while the current efficiency and the quantum efficiency of the example are higher than the comparative example.
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Abstract
The present invention relates to an indazole compound and an organic light emitting device which exhibits superior efficiency characteristics by comprising the indazole compound in one or more organic layers.
Description
본 발명은 인다졸 화합물 및 이를 포함하는 유기발광소자에 관한 것이다.The present invention relates to an indazole compound and an organic light emitting device comprising the same.
유기발광소자는 유기 물질을 이용하여 전기 에너지를 빛 에너지로 전환하기 위한 소자로서, 애노드(anode)와 캐소드(cathode) 사이에 발광 가능한 유기물층이 형성된 구조를 포함한다.The organic light emitting device is a device for converting electrical energy into light energy using an organic material, and includes a structure in which a light emitting organic material layer is formed between an anode and a cathode.
유기발광소자는 다양한 구조로 형성될 수 있으며, 그 중 복수의 발광부가 적층된 텐덤(Tandem)형 유기발광소자가 연구되고 있다.The organic light emitting device may be formed in various structures, among which a tandem organic light emitting device in which a plurality of light emitting parts are stacked is studied.
텐덤(Tandem)형 유기발광소자에서는 애노드와 캐소드 사이에는 발광층을 포함하는 발광부가 복수 개 적층된다. 인접한 발광부 사이에는 전하의 생성 및 이동을 위한 전하생성층이 위치한다.In a tandem organic light emitting device, a plurality of light emitting parts including a light emitting layer are stacked between an anode and a cathode. A charge generation layer for generating and moving charges is positioned between adjacent light emitting units.
전하생성층은 낮은 구동전압과 높은 효율이 요구된다.The charge generation layer requires low driving voltage and high efficiency.
본 발명의 목적은 새로운 구조의 인다졸 화합물을 제공한다.It is an object of the present invention to provide indazole compounds of novel structure.
본 발명의 다른 목적은 텐덤형 유기발광소자에서 n형 전하생성층과 p형 전하생성층 사이의 에너지 레벨 차이를 최소화하여 발광부에 전자 주입량을 향상시킬 수 있는 인다졸 화합물 및 이를 포함하는 유기발광소자를 제공하는 것이다.Another object of the present invention is to minimize the energy level difference between the n-type charge generation layer and the p-type charge generation layer in the tandem organic light emitting device to improve the amount of electron injection in the light emitting portion and the organic light emitting comprising the same It is to provide an element.
본 발명의 또 다른 목적은 n형 전하생성층이 알칼리 금속으로 도핑된 경우에도, 알칼리 금속이 p형 전하생성층으로 확산되는 현상을 최소화할 수 있는 인다졸 화합물 및 이를 포함하는 유기발광소자를 제공하는 것이다.Still another object of the present invention is to provide an indazole compound capable of minimizing the diffusion of alkali metal into the p-type charge generation layer even when the n-type charge generation layer is doped with an alkali metal, and an organic light emitting device including the same. It is.
본 발명의 목적은 하기 화학식 1로 표시되는 인다졸 화합물에 의해 달성된다.The object of the present invention is achieved by an indazole compound represented by the following formula (1).
[화학식 1][Formula 1]
상기 화학식 1에서, R1 및 R2는 수소, 치환 또는 치환되지 않는 탄소수 3 내지 60의 아릴기, 질소, 산소 및 황으로부터 선택되는 하나 이상의 헤테로원자를 포함하는 치환 혹은 치환되지 않은 5원 내지 60원 헤테로아릴기, 아릴아민기, 또는 2차 아민기를 나타내며, X1 및 X2는 질소 또는 탄소에서 선택되고, X1 및 X2 중 적어도 하나는 질소이다.In Formula 1, R 1 and R 2 are hydrogen or unsubstituted or unsubstituted 5 to 60 containing one or more heteroatoms selected from aryl groups having 3 to 60 carbon atoms, nitrogen, oxygen and sulfur. A membered heteroaryl group, an arylamine group, or a secondary amine group, X 1 and X 2 are selected from nitrogen or carbon, and at least one of X 1 and X 2 is nitrogen.
인다졸 화합물은 하기 화학식 2로 표시될 수 있다.The indazole compound may be represented by the following formula (2).
[화학식 2][Formula 2]
X3는 질소 또는 탄소에서 선택될 수 있다.X 3 may be selected from nitrogen or carbon.
R1 및 R2는 각각 독립적으로, 수소, 치환 또는 치환되지 않은 페닐, 알킬페닐, 비페닐, 알킬비페닐, 할로페닐, 알콕시페닐, 할로알콕시페닐, 시아노페닐, 실릴페닐, 나프틸, 알킬나프틸, 할로나프틸, 시아노나프틸, 실릴나프틸, 피리딜, 알킬피리딜, 할로피리딜, 시아노피리딜, 알콕시피리딜, 실릴피리딜, 피리미딜, 할로피리미딜, 시아노피리미딜, 알콕시피리미딜, 퀴놀리닐, 이소퀴놀리닐, 퀴녹살리닐, 피라지닐, 퀴나졸리닐, 나프틸리디닐, 벤조티오페닐, 벤조퓨라닐, 디벤조티오페닐, 아릴티아졸릴, 디벤조퓨라닐, 플루오레닐, 카바조일, 이미다졸릴, 카볼리닐, 페난쓰레닐, 터페닐, 터피리디닐, 트리페닐레닐, 플루오르안테닐 및 디아카플루오레닐 중에서 선택될 수 있다.R 1 and R 2 are each independently hydrogen, substituted or unsubstituted phenyl, alkylphenyl, biphenyl, alkylbiphenyl, halophenyl, alkoxyphenyl, haloalkoxyphenyl, cyanophenyl, silylphenyl, naphthyl, alkyl Naphthyl, halonaphthyl, cyanonaphthyl, silylnaphthyl, pyridyl, alkylpyridyl, halopyridyl, cyanopyridyl, alkoxypyridyl, silylpyridyl, pyrimidyl, halopyrimidyl, cyanopyri Midyl, alkoxypyrimidyl, quinolinyl, isoquinolinyl, quinoxalinyl, pyrazinyl, quinazolinyl, naphthyridinyl, benzothiophenyl, benzofuranyl, dibenzothiophenyl, arylthiazolyl, dibenzofu May be selected from ranyl, fluorenyl, carbazoyl, imidazolyl, carbolinyl, phenanthrenyl, terphenyl, terpyridinyl, triphenylenyl, fluoroantenyl and diacafluorenyl.
상기 본 발명의 목적은 제1전극; 제2전극; 및 상기 제1전극과 상기 제2전극 사이에 위치하며 빛을 발광하는 유기물층을 포함하며, 상기 유기물층은 복수의 층으로 이루어지며 적어도 하나의 층은 상기 인다졸 화합물을 포함하는 유기발광소자에 의해 달성된다.The object of the present invention is a first electrode; Second electrode; And an organic material layer disposed between the first electrode and the second electrode and emitting light, wherein the organic material layer is formed of a plurality of layers, and at least one layer is achieved by an organic light emitting device including the indazole compound. do.
상기 적어도 하나의 층은 전하생성층(Charge Generation Layer; CGL)을 포함할 수 있다.The at least one layer may include a charge generation layer (CGL).
상기 전하생성층(Charge Generation Layer; CGL)은 n형일 수 있다.The charge generation layer CGL may be n-type.
상기 적어도 하나의 층은 전자수송층을 포함할 수 있다.The at least one layer may include an electron transport layer.
상기 본 발명의 목적은 제1전극; 제2전극; 및 상기 제1전극과 상기 제2전극 사이에 위치하며 제1발광층을 포함하는 제1발광부; 상기 제2전극과 상기 제1발광부 사이에 위치하며 제2발광층을 포함하는 제2발광부; 상기 제1발광부와 상기 제2발광부 사이에 위치하는 전하생성층을 포함하며, 상기 전하생성층은 상기 인다졸 화합물을 포함하는 유기발광소자에 의해 달성된다.The object of the present invention is a first electrode; Second electrode; And a first light emitting part disposed between the first electrode and the second electrode and including a first light emitting layer. A second light emitting part disposed between the second electrode and the first light emitting part and including a second light emitting layer; And a charge generating layer positioned between the first light emitting portion and the second light emitting portion, wherein the charge generating layer is achieved by an organic light emitting device including the indazole compound.
본 발명에 따르면 새로운 구조의 인다졸 화합물이 제공된다.According to the present invention, an indazole compound of a novel structure is provided.
본 발명에 따르면 n형 전하생성층과 p형 전하생성층 사이의 에너지 레벨 차이를 최소화하여 발광부에 전자 주입량을 향상시켜 구동 전압 및 효율을 향상시킬 수 있는 인다졸 화합물 및 이를 포함하는 유기발광소자가 제공된다.According to the present invention, an indazole compound capable of improving the driving voltage and efficiency by improving the electron injection amount in the light emitting part by minimizing the energy level difference between the n-type charge generation layer and the p-type charge generation layer and an organic light emitting device comprising the same Is provided.
본 발명에 따르면 n형 전하생성층이 알칼리 금속으로 도핑된 경우에도, 알칼리 금속이 호스트 물질인 인다졸 화합물에 단단히 배위하여 알칼리 금속이 p형 전하생성층으로 확산되는 현상을 최소화함으로써 유기발광소자의 수명을 개선할 수 있는 인다졸 화합물 및 이를 포함하는 유기발광소자가 제공된다.According to the present invention, even when the n-type charge generation layer is doped with an alkali metal, the alkali metal is tightly coordinated with an indazole compound which is a host material to minimize diffusion of the alkali metal into the p-type charge generation layer. Provided are an indazole compound capable of improving lifespan and an organic light emitting device comprising the same.
도 1은 본 발명의 일 실시예에 따른 유기발광소자의 단면도이다.1 is a cross-sectional view of an organic light emitting diode according to an embodiment of the present invention.
본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 그러나 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하며, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명의 권리범위는 청구범위에 의해 정의될 뿐이다. Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, only the embodiments are to make the disclosure of the present invention complete, the common knowledge in the art to which the present invention belongs It is provided to fully inform those having the scope of the invention, the scope of the invention is defined only by the claims.
도면에서 나타난 각 구성의 크기 및 두께는 설명의 편의를 위해 도시된 것이며, 본 발명이 도시된 구성의 크기 및 두께에 반드시 한정되는 것은 아니다.The size and thickness of each component shown in the drawings are shown for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated configuration.
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
본 발명에 따른 인다졸 화합물은 화학식 1 또는 화학식 2로 표시된다.The indazole compound according to the present invention is represented by the formula (1) or (2).
[화학식 1][Formula 1]
[화학식 2] [Formula 2]
화학식 1과 화학식 2에서 R1 및 R2는 수소, 치환 또는 치환되지 않는 탄소수 3 내지 60의 아릴기, 질소, 산소 및 황으로부터 선택되는 하나 이상의 헤테로원자를 포함하는 치환 혹은 치환되지 않은 5원 내지 60원 헤테로아릴기, 아릴아민기, 또는 2차 아민기를 나타낸다. Formula (I) and R 1 and R 2 are hydrogen, a substituted or non-substituted C 3 -C 60 aryl group, to 5 won unsubstituted or substituted, which contain one or more heteroatoms selected from nitrogen, oxygen and sulfur in the general formula (2) A 60-membered heteroaryl group, an arylamine group, or a secondary amine group is represented.
화학식 1과 화학식 2에서 X1, X2 및 X3는 질소 또는 탄소에서 선택되고, X1 및 X2 중 적어도 하나는 질소이다.In Formula 1 and Formula 2, X 1, X 2 and X 3 are selected from nitrogen or carbon, and at least one of X 1 and X 2 is nitrogen.
R1 및 R2는 각각 독립적으로, 수소, 치환 또는 치환되지 않은 페닐, 알킬페닐, 비페닐, 알킬비페닐, 할로페닐, 알콕시페닐, 할로알콕시페닐, 시아노페닐, 실릴페닐, 나프틸, 알킬나프틸, 할로나프틸, 시아노나프틸, 실릴나프틸, 피리딜, 알킬피리딜, 할로피리딜, 시아노피리딜, 알콕시피리딜, 실릴피리딜, 피리미딜, 할로피리미딜, 시아노피리미딜, 알콕시피리미딜, 퀴놀리닐, 이소퀴놀리닐, 퀴녹살리닐, 피라지닐, 퀴나졸리닐, 나프틸리디닐, 벤조티오페닐, 벤조퓨라닐, 디벤조티오페닐, 아릴티아졸릴, 디벤조퓨라닐, 플루오레닐, 카바조일, 이미다졸릴, 카볼리닐, 페난쓰레닐, 터페닐, 터피리디닐, 트리페닐레닐, 플루오르안테닐 및 디아카플루오레닐 중에서 선택될 수 있다.R 1 and R 2 are each independently hydrogen, substituted or unsubstituted phenyl, alkylphenyl, biphenyl, alkylbiphenyl, halophenyl, alkoxyphenyl, haloalkoxyphenyl, cyanophenyl, silylphenyl, naphthyl, alkyl Naphthyl, halonaphthyl, cyanonaphthyl, silylnaphthyl, pyridyl, alkylpyridyl, halopyridyl, cyanopyridyl, alkoxypyridyl, silylpyridyl, pyrimidyl, halopyrimidyl, cyanopyri Midyl, alkoxypyrimidyl, quinolinyl, isoquinolinyl, quinoxalinyl, pyrazinyl, quinazolinyl, naphthyridinyl, benzothiophenyl, benzofuranyl, dibenzothiophenyl, arylthiazolyl, dibenzofu May be selected from ranyl, fluorenyl, carbazoyl, imidazolyl, carbolinyl, phenanthrenyl, terphenyl, terpyridinyl, triphenylenyl, fluoroantenyl and diacafluorenyl.
본 발명에 따른 인다졸 화합물은 하기 표시되는 화합물일 수 있다.The indazole compound according to the present invention may be a compound shown below.
본 발명의 화학식 1 및 2로 표시되는 화합물은 퀴놀린과 페난쓰롤린의 2번 위치에 피리도인다졸의 7번 위치가 결합되었다. 이러한 구조는 입체적으로 질소(N)원자가 인접하여 있고 매우 안정된 구조이다. 그리고 전자가 상대적으로 풍부한 sp2 혼성의 오비탈의 질소(N)를 포함한다. 이 질소는 N형 전하생성층의 도펀트인 알칼리 금속 또는 알칼리 토금속과 결합(binding)하여 갭 스테이트(gap state)를 형성한다. 형성된 갭 스테이트에 의해, P형 전하생성층에서 N형 전하생성층으로 전자의 전달을 원활하게 할 수 있다. Compounds represented by the formulas (1) and (2) of the present invention are bound to position 7 of pyridoindazole to position 2 of quinoline and phenanthrosine. This structure is a structure in which three nitrogen atoms are adjacent to each other and are very stable. And nitrogen (N) in sp 2 hybrid orbitals, which are relatively rich in electrons. This nitrogen binds to an alkali metal or alkaline earth metal, which is a dopant of the N-type charge generation layer, to form a gap state. By the formed gap state, electrons can be smoothly transferred from the P-type charge generation layer to the N-type charge generation layer.
또한, 본 발명의 화학식에 전하생성층의 전자 주입 특성을 향상시키기 위한 다양한 합성을 하게 되었다. 여러 합성을 통하여 전하생성층에 포함되는 호스트는 안트라센(anthracene) 화합물과 파이렌(pyrene)화합물 및 기타 아릴화합물을 도입하였다.In addition, various chemical formulas have been made to improve electron injection characteristics of the charge generation layer in the chemical formula of the present invention. Through various synthesis, the host included in the charge generation layer introduced anthracene compound, pyrene compound and other aryl compounds.
도 1은 본 발명의 일 실시예에 따른 유기발광소자의 단면도이다. 도 1을 참조하면, 유기발광소자(1)는 탄뎀형 구조로서 제1전극(양극, 110), 제2전극(음극, 120), 제1발광부(210), 제2발광부(220) 및 전하생성층(230)을 포함한다.1 is a cross-sectional view of an organic light emitting diode according to an embodiment of the present invention. Referring to FIG. 1, the organic light emitting diode 1 has a tandem type structure, and includes a first electrode (anode 110), a second electrode (cathode 120), a first light emitter 210, and a second light emitter 220. And a charge generation layer 230.
제1발광부(210), 제2발광부(220) 및 전하생성층(230)은 유기물층으로서 제1전극(110)과 제2전극(120) 사이에 위치하며, 전하생성층(230)은 제1발광부(210)와 제2발광부(220) 사이에 위치한다.The first light emitting unit 210, the second light emitting unit 220, and the charge generation layer 230 are positioned between the first electrode 110 and the second electrode 120 as an organic layer, and the charge generation layer 230 is Located between the first light emitting unit 210 and the second light emitting unit 220.
제1발광부(210)는 정공주입층(211), 제1정공수송층(212), 제1발광층(213), 제1전자수송층(214)로 이루어져 있으며, 제2발광부(220)는 제2정공수송층(221), 제2발광층(222), 제2전자수송층(223) 및 전자주입층(224)으로 이루어져 있다.The first light emitting part 210 includes a hole injection layer 211, a first hole transporting layer 212, a first light emitting layer 213, and a first electron transporting layer 214, and the second light emitting part 220 is formed of a first light emitting part 220. The two hole transport layer 221, the second light emitting layer 222, the second electron transport layer 223 and the electron injection layer 224.
전하생성층(230)은 n형 전하생성층(231)과 p형 전하생성층(232)로 이루어져 있다. n형 전하생성층(231)은 알칼리 금속으로 도핑되어 있을 수 있다.The charge generation layer 230 includes an n-type charge generation layer 231 and a p-type charge generation layer 232. The n-type charge generation layer 231 may be doped with an alkali metal.
본 발명에 따른 인다졸 화합물은 제1전자수송층(212), 제2전자수송층(223) 및 전하생성층(230)에 포함되어 사용될 수 있으며, 특히 n형 전하생성층(231)에 사용될 수 있다.The indazole compound according to the present invention may be used in the first electron transport layer 212, the second electron transport layer 223, and the charge generation layer 230, and in particular, may be used in the n-type charge generation layer 231. .
설명한 유기발광소자(1)는 다양하게 변형가능하다. 일부 유기층은 생략되거나 추가될 수 있으며, 텐덤형태가 아닐 수 있으며, 3개 이상의 발광층을 가지는 텐덤형태일 수도 있다.The organic light emitting device 1 described above can be variously modified. Some organic layers may be omitted or added, may not be tandem, or may be tandem having three or more light emitting layers.
이하에서는 화합물 3의 제조예 및 유기발광소자의 실시예 및 비교예를 설명한다. 다만, 하기에 기재된 제조예 및 실시예는 본 발명을 구체적으로 예시하거나 설명하기 위한 것일 뿐이며, 이하에 기재된 제조예 및 실시예에 의해 본 발명을 제한하여 해석되어서는 안 된다.Hereinafter, examples of the compound 3 and examples and comparative examples of the organic light emitting diode will be described. However, the production examples and examples described below are merely for illustrating or explaining the present invention in detail, and should not be construed as limiting the present invention by the production examples and examples described below.
화합물 2-3의 제조Preparation of Compound 2-3
2L 3구플라스크에서 1-(6-브로모피리딘-2-일)에타논 30g(149.98mmol)과 (2-니트로페닐)보로닉엑시드 32.5g(194.97mmol)를 투입하였다. K2CO3 62.2g(449.93mmol) 및 Pd(PPh3)4 4.5g(4.5mmol)을 투입한 후 톨루엔 400ml, H2O 200ml, 에탄올 200ml 혼합용액에서 질소 치환을 한 후 4 시간 동안 환류하면서 교반을 하였다. 반응이 종료 후 MC 로 추출하고 유기층은 MgSO4로 건조 후 메탄올로 재결정하여 목적 화합물 2-3 28.76g(79.3%)을 얻었다.In a 2 L three-necked flask, 30 g (149.98 mmol) of 1- (6-bromopyridin-2-yl) ethanone and 32.5 g (194.97 mmol) of (2-nitrophenyl) boronic acid were charged. 62.2 g (449.93 mmol) of K 2 CO 3 and 4.5 g (4.5 mmol) of Pd (PPh 3 ) 4 were added thereto, followed by nitrogen replacement in 400 ml of toluene, 200 ml of H 2 O, and 200 ml of ethanol, followed by reflux for 4 hours. Stirring was performed. After the reaction was completed, the mixture was extracted with MC, the organic layer was dried over MgSO 4 , and recrystallized with methanol to obtain 28.76 g (79.3%) of the title compound 2-3.
화합물 2-2의 제조Preparation of Compound 2-2
1L 3구 플라스크에서 화합물2-3 28.8g(118.9mmol), 트리페닐포스핀 78g(297.24mmol)을 오르쏘-디클로로벤젠 300ml에 녹인 후 15시간 환류하면서 교반하였다. 반응이 완료되면 감압 증류로 용매를 제거하고 컬럼크로마토그래피로 정제하여 화합물 2-2 18.99g(76.73%)을 얻었다.In a 1 L three-neck flask, 28.8 g (118.9 mmol) of Compound 2-3 and 78 g (297.24 mmol) of triphenylphosphine were dissolved in 300 ml of ortho-dichlorobenzene, followed by stirring under reflux for 15 hours. After the reaction was completed, the solvent was removed by distillation under reduced pressure and purified by column chromatography to obtain 18.99 g (76.73%) of Compound 2-2.
화합물 1-38의 제조Preparation of Compound 1-38
250ml 3구 플라스크에서 화합물2-2 4.17g(20.02mmol), 8-아미노퀴놀린-7-카바알데하이드 4.13g(24.03mmol)을 투입하였다. 에탄올 100ml에 녹인 후 KOH 2.25g(40.05mmol)을 투입하고 3 시간 동안 환류하면서 교반하였다. 반응이 완결되면 H2O 100ml를 첨가해 석출시켰다. 석출된 고체를 여과 후 컬럼크로마토그래피로 정제하여 화합물 1 4.38g(63.18%)을 얻었다.4.17 g (20.02 mmol) of Compound 2-2 and 4.13 g (24.03 mmol) of 8-aminoquinoline-7-carbaaldehyde were added to a 250 ml three-neck flask. After dissolving in 100 ml of ethanol, 2.25 g (40.05 mmol) of KOH was added thereto, followed by stirring under reflux for 3 hours. When the reaction was completed, 100 ml of H 2 O was added to precipitate. The precipitated solid was filtered and purified by column chromatography to give 4.38 g (63.18%) of compound 1.
화합물 2-a의 제조Preparation of Compound 2-a
250ml 3구 플라스크에서 화합물 2-2 5g(24.01mmol), 8-아미노-5-브로모퀴놀린-7-카바알데하이드 6.6g(26.41mmol)을 투입하였다. KOH 2.7g(48.02mmol)을 에탄올 100ml에 녹인 후 3시간 동안 환류하면서 교반하였다. 반응이 완결되면 H2O를 100ml 첨가해 석출시켰다. 석출된 고체를 여과 후 컬럼크로마토그래피로 정제하여 화합물 2-a 6.38g(62.5%)을 얻는다.5 g (24.01 mmol) of Compound 2-2 and 6.6 g (26.41 mmol) of 8-amino-5-bromoquinoline-7-carbaaldehyde were added to a 250 ml three-neck flask. 2.7 g (48.02 mmol) of KOH was dissolved in 100 ml of ethanol and stirred under reflux for 3 hours. When the reaction was completed, 100 ml of H 2 O was added to precipitate. The precipitated solid was filtered and purified by column chromatography to give 6.38 g (62.5%) of compound 2-a.
화합물 1-69 제조Manufacture compound 1-69
250ml 3구 플라스크에서 화합물2-a 6.38g(15.00mmol), 5-(4-(4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl)phenyl)pyrimidine 5.5g(19.50mmol)을 투입하였다. K2CO3 6.2g(45.01mmol)및 Pd(PPh3)4 0.52g(0.45mmol)을 투입한 후 톨루엔 50ml, H2O 30ml, 에탄올 30ml 혼합용액에서 21 시간 동안 환류하면서 교반하였다. 반응이 완결되면 메탄올 100ml 첨가해 석출시켜다. 석출된 고체를 여과 후 H2O 50ml로 3번 씻어준다. 건조된 고체는 컬럼크로마토그래피로 정제하여 화합물 1-69를 6.5g(86.6%) 얻었다.6.38 g (15.00 mmol), 5- (4- (4,4,5,5-tetramethyl-1,3,2-dioxaborolan-2-yl) phenyl) pyrimidine in a 250 ml three necked flask 19.50 mmol) was added. 6.2 g (45.01 mmol) of K 2 CO 3 and 0.52 g (0.45 mmol) of Pd (PPh 3 ) 4 were added thereto, followed by stirring under reflux for 21 hours in a mixed solution of 50 ml of toluene, 30 ml of H 2 O, and 30 ml of ethanol. When the reaction is completed, 100 ml of methanol is added to precipitate. The precipitated solid is filtered and washed three times with 50 ml of H 2 O. The dried solid was purified by column chromatography to give 6.5g (86.6%) of compound 1-69.
화합물 1-64 제조Compound 1-64 Preparation
250ml 3구 플라스크에 화합물2-a 6.38g(15.00mmol), [1,1'-biphenyl]-4-ylboronic acid 3.86g(19.50mmol)을 투입하였다. K2CO3 6.2g(45.01mmol)및 Pd(PPh3)4 0.52g(0.45mmol)을 투입한 후 톨루엔 50ml, H2O 30ml, 에탄올 30ml 혼합용액에서 21시간동안 환류하면서 교반하였다. 반응이 완결되면 메탄올 100ml 첨가해 석출시켰다. 석출된 고체를 여과 후 H2O 50ml로 3번 씻어준다. 건조된 고체는 컬럼크로마토그래피로 정제하여 화합물 1-64를 3.38g(57.65%) 얻었다.6.38 g (15.00 mmol) of Compound 2-a and 3.86 g (19.50 mmol) of [1,1'-biphenyl] -4-ylboronic acid were added to a 250 ml three-neck flask. 6.2 g (45.01 mmol) of K 2 CO 3 and 0.52 g (0.45 mmol) of Pd (PPh 3 ) 4 were added thereto, followed by stirring under reflux for 21 hours in a mixed solution of 50 ml of toluene, 30 ml of H 2 O, and 30 ml of ethanol. When the reaction was completed, 100 ml of methanol was added to precipitate. The precipitated solid is filtered and washed three times with 50 ml of H2O. The dried solid was purified by column chromatography to give 3.38 g (57.65%) of Compound 1-64.
화합물 2-b의 제조Preparation of Compound 2-b
250ml 3구 플라스크에서 화합물2-2 5g(24.01mmol), 2-아미노-4-브로모벤즈알데하이드 5.3g(26.41mmol)을 투입하였다. KOH 2.7g(48.02mmol)을 에탄올 100ml에 녹인 후 3시간 동안 환류하면서 교반하였다. 반응이 완결되면 H2O 100ml 첨가해 석출시켜다. 석출된 고체를 여과 후 컬럼크로마토그래피로 정제하여 화합물 2-b 6.6g(73.46%) 을 얻는다.5 g (24.01 mmol) of Compound 2-2 and 5.3 g (26.41 mmol) of 2-amino-4-bromobenzaldehyde were added to a 250 ml three-neck flask. 2.7 g (48.02 mmol) of KOH was dissolved in 100 ml of ethanol and stirred under reflux for 3 hours. When the reaction is completed, 100 ml of H 2 O is added to precipitate. The precipitated solid was filtered and purified by column chromatography to give 6.6 g (73.46%) of compound 2-b.
화합물 1-24의 제조Preparation of Compound 1-24
250ml 3구 플라스크에서 화합물2-b 6.6g(17.64mmol), (10-페닐안트라센-9-일)보로닉엑시드 6.83g(22.93mmol)을 투입하였다. K2CO3 7.3g(52.91mmol) 및 Pd(PPh3)4 0.62g(0.53mmol)을 투입한 후 톨루엔 50ml, H2O 30ml, 에탄올 20ml 혼합용액에서 4시간 환류하면서 교반하였다. 반응이 완료되면 H2O 100ml 첨가해 MC로 추출하고 유기층은 MgSO4로 건조하였다. 컬럼크로마토그래피로 정제하여 화합물1-24를 4. 85g(87.93%) 얻었다.In a 250 ml three-necked flask, 6.6 g (17.64 mmol) of Compound 2-b and 6.83 g (22.93 mmol) of (10-phenylanthracene-9-yl) boronic acid were added thereto. 7.3 g (52.91 mmol) of K 2 CO 3 and 0.62 g (0.53 mmol) of Pd (PPh 3 ) 4 were added thereto, followed by stirring under reflux for 4 hours in a mixed solution of 50 ml of toluene, 30 ml of H 2 O, and 20 ml of ethanol. After the reaction was completed, 100 ml of H 2 O was added, extracted with MC, and the organic layer was dried over MgSO 4 . Purified by column chromatography to give 4.85g (87.93%) of compound 1-24.
NMR과 GC-MS를 통해 각 화합물을 확인하였다.Each compound was identified through NMR and GC-MS.
NMR : Nuclear Magnetic Resonance 500(핵자기 공명 분광기 500 MHz)NMR: Nuclear Magnetic Resonance 500 (Nuclear Magnetic Resonance Spectrometer 500 MHz)
모델명 : Avance-500(Bruker)Model Name: Avance-500 (Bruker)
GC-MS : Gas Chromatography-Mass Spectrometer(기체 크로마토그래피 질량분석기) 모델명 : JMS-700, 6890 SeriesGC-MS: Gas Chromatography-Mass Spectrometer Model: JMS-700, 6890 Series
[유기 EL소자의 제조][Production of Organic EL Device]
비교예Comparative example
발광면적이 2mm × 2mm 크기가 되도록 ITO 기판을 패터닝한 후, 이소프로필 알코올과 UV 오존으로 각각 세정을 실시하였다. 이후, ITO기판을 진공 증착 장치의 기판 홀더에 장착하고 진공도가 1×10-7torr가 되도록 압력을 잡았다.After patterning the ITO board | substrate so that a light emitting area might be set to 2 mm x 2 mm, it wash | cleaned with isopropyl alcohol and UV ozone, respectively. Thereafter, the ITO substrate was mounted on the substrate holder of the vacuum deposition apparatus and pressure was applied such that the vacuum degree was 1 × 10 −7 torr.
먼저, HAT-CN 화합물을 진공 증착하여 5nm 두께로 형성하였다. 이 화합물은 정공수송층으로 작용한다. 이 위에 정공수송층으로 NPB 물질을 35nm 두께로 형성하였다.First, a HAT-CN compound was vacuum deposited to form a 5 nm thick. This compound acts as a hole transport layer. An NPB material was formed to a thickness of 35 nm as a hole transport layer thereon.
이후 CBP 물질을 호스트로, Ir 화합물을 도판트로 약 10% 질량비가 되도록 30nm의 두께로 공증착하여 노란색 발광층을 형성하였다.Thereafter, a CBP material was used as a host, and an Ir compound was co-deposited at a thickness of 30 nm to form a dopant of about 10% by mass to form a yellow light emitting layer.
이 발광층위에 TmPyPB 화합물을 25nm 두께로 제 1 전자수송층을 형성하였다. 이후, BPhen물질에 Li물질을 2% 질량비가 되도록 10nm 두께로 공증착하여 제 2 전자수송층을 형성하였다. 이후, Al을 100nm 두께로 증착시켜 음극을 형성하여 유기 EL 소자를 제작하였다.The first electron transport layer was formed on the light emitting layer with a TmPyPB compound having a thickness of 25 nm. Subsequently, a second electron transport layer was formed by co-depositing a Li material on the BPhen material to a thickness of 10 nm to have a 2% mass ratio. Thereafter, Al was deposited to a thickness of 100 nm to form a cathode to fabricate an organic EL device.
실시예 1Example 1
위에 전술한 비교예와 동일하게 구성하되, 제 2 전자수송층 물질만 1-69화합물로 바꾸어 유기발광소자를 제작하였다.The organic light emitting device was manufactured by the same method as the comparative example described above, but replacing only the second electron transport material with 1-69 compound.
실시예 2Example 2
위에 전술한 비교예와 동일하게 구성하되, 제 2 전자수송층 물질만 1-24화합물로 바꾸어 유기발광소자를 제작하였다.The organic light emitting device was fabricated in the same manner as the comparative example described above, but replacing only the second electron transport material with a 1-24 compound.
실시예 3Example 3
위에 전술한 비교예와 동일하게 구성하되, 제 2 전자수송층 물질만 1-38화합물로 바꾸어 유기발광소자를 제작하였다.The organic light emitting device was manufactured by the same method as the comparative example described above, but replacing only the second electron transport material with a 1-38 compound.
실시예 4Example 4
위에 전술한 비교예와 동일하게 구성하되, 제 2 전자수송층 물질만 1-64화합물로 바꾸어 유기발광소자를 제작하였다.The organic light emitting device was fabricated in the same manner as the comparative example described above, except that only the second electron transport material was converted into a 1-64 compound.
PIN OLED의 경우 OLED 구조 내에 전하 수송층에 전기적 도핑을 통하여 저전압 고효율 구동을 실현한다. P 도핑 층에는 정공수송물질에 전자가 희박한 유기물질이나 금속 산화물을 도핑하고, N 도핑 층에는 전자수송물질에 일함수가 낮은 리튬이나 세슘 등의 알칼리 금속을 도핑하게 된다. 도핑된 층은 구동되는 동안 유기물질의 표면 저항을 줄여서 인접 층으로부터 전하 주입을 용이하게 한다. 도핑된 양극층 위에 버퍼층을 도입하여 에너지 밴딩에 의한 저전압 구현, 전하이동도가 높은 소재를 이용한 저전압 구동기술 등이 알려져 있으며 형광과 인광 소재를 적층구조로 제작하여 높은 효율을 얻고 있다.In the case of PIN OLEDs, low-voltage high-efficiency driving is realized through electrical doping of the charge transport layer in the OLED structure. The P doping layer is doped with an electron-lean organic material or metal oxide in the hole transport material, and the N doping layer is doped with an alkali metal such as lithium or cesium having a low work function in the electron transport material. The doped layer reduces the surface resistance of the organic material during operation to facilitate charge injection from adjacent layers. The introduction of a buffer layer on the doped anode layer realizes low voltage by energy banding and a low voltage driving technique using a material having high charge mobility, and has obtained high efficiency by manufacturing a fluorescent and phosphorescent material in a laminated structure.
Tandem 구조는 도핑된 정공수송층과 전자수송층을 포함하는 EL 단위를 수직으로 적층한 구조로, 적층한 수에 비례하여 전류발광효율이 증가한다. 이때 CGL (change generation layer)층은 투명한 PN 접합의 개념이며, 단위 PIN OLED 발광부를 복수의 층으로 쌓아 놓은 개념으로 이해하면 된다. 따라서 단일 층의 PIN OLED 실시예로도 스택구조의 효율과 전압을 예측할 수 있다Tandem structure is a structure in which the EL units including the doped hole transport layer and the electron transport layer are vertically stacked, and the current luminous efficiency increases in proportion to the number of stacked layers. In this case, the CGL (change generation layer) layer is a concept of a transparent PN junction, and can be understood as a concept in which a unit PIN OLED light emitting unit is stacked in a plurality of layers. Therefore, even a single layer PIN OLED embodiment can predict the efficiency and voltage of the stack structure.
실시예 및 비교예의 유기발광소자의 전류 밀도, 구동 전압, 전류 효율, 및 외부양자효율을 측정하였으며, 그 결과는 표 1과 같다.The current density, driving voltage, current efficiency, and external quantum efficiency of the organic light emitting diodes of Examples and Comparative Examples were measured, and the results are shown in Table 1 below.
물질matter | 구동전략(mA/cm2)Driving strategy (mA / cm 2 ) | 구동전압(V)Driving voltage (V) | 전류효율(cd/A)Current efficiency (cd / A) | 양자효율(%)Quantum Efficiency (%) | |
비교예Comparative example | BphenBphen | 1010 | 4.54.5 | 56.556.5 | 19.119.1 |
실시예 1Example 1 | 1-691-69 | 1010 | 4.14.1 | 62.762.7 | 21.221.2 |
실시예 2Example 2 | 1-241-24 | 1010 | 4.14.1 | 59.859.8 | 20.420.4 |
실시예 3Example 3 | 1-381-38 | 1010 | 4.04.0 | 63.263.2 | 21.021.0 |
실시예 4Example 4 | 1-641-64 | 1010 | 4.14.1 | 59.059.0 | 20.020.0 |
실시예의 구동 전압은 비교예에 비해 낮아지는 반면 실시예의 전류효율과 양자효율은 비교예에 비해 높아진 것을 확인할 수 있다.It can be seen that the driving voltage of the embodiment is lower than that of the comparative example while the current efficiency and the quantum efficiency of the example are higher than the comparative example.
본 발명은 반드시 이러한 실시예로 국한되는 것은 아니고, 본 발명의 기술사상을 벗어나지 않는 범위 내에서 다양하게 변형 실시될 수 있다. 따라서, 본 발명에 개시된 실시예들은 본 발명의 기술 사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시예에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. 그러므로, 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 한다. 본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.The present invention is not necessarily limited to these embodiments, and various modifications can be made without departing from the spirit of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.
Claims (9)
- 하기 화학식 1로 표시되는 인다졸 화합물.Indazole compound represented by the following formula (1).[화학식 1][Formula 1]상기 화학식 1에서,In Chemical Formula 1,R1 및 R2는 수소, 치환 또는 치환되지 않는 탄소수 3 내지 60의 아릴기, 질소, 산소 및 황으로부터 선택되는 하나 이상의 헤테로원자를 포함하는 치환 혹은 치환되지 않은 5원 내지 60원 헤테로아릴기, 아릴아민기, 또는 2차 아민기를 나타내며,R 1 and R 2 are hydrogen or a substituted or unsubstituted 5- to 60-membered heteroaryl group including one or more heteroatoms selected from aryl groups having 3 to 60 carbon atoms, nitrogen, oxygen and sulfur, An arylamine group or a secondary amine group,X1 및 X2는 질소 또는 탄소에서 선택되고, X1 및 X2 중 적어도 하나는 질소이다.X 1 and X 2 are selected from nitrogen or carbon, and at least one of X 1 and X 2 is nitrogen.
- 제1항 및 제2항 중 어느 한 항에 있어서,The method according to any one of claims 1 and 2,R1 및 R2는 각각 독립적으로, 수소, 치환 또는 치환되지 않은 페닐, 알킬페닐, 비페닐, 알킬비페닐, 할로페닐, 알콕시페닐, 할로알콕시페닐, 시아노페닐, 실릴페닐, 나프틸, 알킬나프틸, 할로나프틸, 시아노나프틸, 실릴나프틸, 피리딜, 알킬피리딜, 할로피리딜, 시아노피리딜, 알콕시피리딜, 실릴피리딜, 피리미딜, 할로피리미딜, 시아노피리미딜, 알콕시피리미딜, 퀴놀리닐, 이소퀴놀리닐, 퀴녹살리닐, 피라지닐, 퀴나졸리닐, 나프틸리디닐, 벤조티오페닐, 벤조퓨라닐, 디벤조티오페닐, 아릴티아졸릴, 디벤조퓨라닐, 플루오레닐, 카바조일, 이미다졸릴, 카볼리닐, 페난쓰레닐, 터페닐, 터피리디닐, 트리페닐레닐, 플루오르안테닐 및 디아카플루오레닐 중에서 선택되는 것을 특징으로 하는 인다졸 화합물.R 1 and R 2 are each independently hydrogen, substituted or unsubstituted phenyl, alkylphenyl, biphenyl, alkylbiphenyl, halophenyl, alkoxyphenyl, haloalkoxyphenyl, cyanophenyl, silylphenyl, naphthyl, alkyl Naphthyl, halonaphthyl, cyanonaphthyl, silylnaphthyl, pyridyl, alkylpyridyl, halopyridyl, cyanopyridyl, alkoxypyridyl, silylpyridyl, pyrimidyl, halopyrimidyl, cyanopyri Midyl, alkoxypyrimidyl, quinolinyl, isoquinolinyl, quinoxalinyl, pyrazinyl, quinazolinyl, naphthyridinyl, benzothiophenyl, benzofuranyl, dibenzothiophenyl, arylthiazolyl, dibenzofu Indazole compound, characterized in that it is selected from ranyl, fluorenyl, carbazoyl, imidazolyl, carbolinyl, phenanthrenyl, terphenyl, terpyridinyl, triphenylenyl, fluoroantenyl and diacafluorenyl .
- 제1전극;A first electrode;제2전극; 및Second electrode; And상기 제1전극과 상기 제2전극 사이에 위치하며 빛을 발광하는 유기물층을 포함하며,An organic material layer disposed between the first electrode and the second electrode and emitting light;상기 유기물층은 복수의 층으로 이루어지며 적어도 하나의 층은 제1항 내지 제4항 중 어느 한 항에 따른 인다졸 화합물을 포함하는 유기발광소자.The organic layer is composed of a plurality of layers and at least one layer of the organic light emitting device comprising the indazole compound according to any one of claims 1 to 4.
- 제5항에 있어서,The method of claim 5,상기 적어도 하나의 층은 전하생성층(Charge Generation Layer; CGL)을 포함하는 것을 특징으로 하는, 유기발광소자.The at least one layer is characterized in that it comprises a charge generation layer (Charge Generation Layer; CGL), the organic light emitting device.
- 제6항에 있어서,The method of claim 6,상기 전하생성층(Charge Generation Layer; CGL)은 n형인 것을 특징으로 하는 유기발광소자.The charge generation layer (CGL) is an organic light emitting device, characterized in that the n-type.
- 제5항에 있어서,The method of claim 5,상기 적어도 하나의 층은 전자수송층을 포함하는 것을 특징으로 하는 유기발광소자.The at least one layer is an organic light emitting device comprising an electron transport layer.
- 제1전극;A first electrode;제2전극; 및Second electrode; And상기 제1전극과 상기 제2전극 사이에 위치하며 제1발광층을 포함하는 제1발광부;A first light emitting part disposed between the first electrode and the second electrode and including a first light emitting layer;상기 제2전극과 상기 제1발광부 사이에 위치하며 제2발광층을 포함하는 제2발광부;A second light emitting part disposed between the second electrode and the first light emitting part and including a second light emitting layer;상기 제1발광부와 상기 제2발광부 사이에 위치하는 전하생성층을 포함하며,A charge generation layer positioned between the first light emitting unit and the second light emitting unit,상기 전하생성층은 제1항 내지 제4항 중 어느 한 항에 따른 인다졸 화합물을 포함하는 유기발광소자.The charge generating layer is an organic light emitting device comprising the indazole compound according to any one of claims 1 to 4.
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