WO2018102955A1 - Micro laser diode display device and electronics apparatus - Google Patents

Micro laser diode display device and electronics apparatus Download PDF

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Publication number
WO2018102955A1
WO2018102955A1 PCT/CN2016/108513 CN2016108513W WO2018102955A1 WO 2018102955 A1 WO2018102955 A1 WO 2018102955A1 CN 2016108513 W CN2016108513 W CN 2016108513W WO 2018102955 A1 WO2018102955 A1 WO 2018102955A1
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Prior art keywords
micro laser
laser diode
display device
micro
laser diodes
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Ceased
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PCT/CN2016/108513
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French (fr)
Inventor
Quanbo Zou
Zhe Wang
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Goertek Inc
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Goertek Inc
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Application filed by Goertek Inc filed Critical Goertek Inc
Priority to PCT/CN2016/108513 priority Critical patent/WO2018102955A1/en
Priority to CN201680090691.6A priority patent/CN109923468A/en
Priority to US16/465,376 priority patent/US20200006924A1/en
Publication of WO2018102955A1 publication Critical patent/WO2018102955A1/en
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder

Definitions

  • the present invention relates to micro laser diodes, and more specifically, to a micro laser diode display device and an electronics apparatus.
  • the laser diode has been actively developed recently.
  • a laser diode or a laser diode array is used as a light source for optical communications or a laser printer.
  • the laser diode could be of a vertical cavity surface emitting laser (VCSEL) structure, which includes a lower contact layer, a lower Bragg reflector layer, a lower spacer layer, an active layer, an upper spacer layer, an upper Bragg reflector layer and an upper contact layer.
  • VCSEL vertical cavity surface emitting laser
  • micro laser diodes are transferred onto a receiving substrate individually.
  • the common electrode for the micro laser diodes is mounted at bottom on the receiving substrate.
  • the top electrodes of the laser diodes are wire-bonded onto the receiving substrate.
  • the laser diode is downsizing and thus an individual micro laser diode can be made, traditional assembling approaches are still used in transfer of the micro laser diode. They are not suitable for the application of a micro laser diode. Furthermore, they are not suitable for a display device using micro laser diodes, especially, a high definition (HD) display device.
  • HD high definition
  • US patent application No. 2016/0308333 A1 discloses a laser diode array, method of manufacturing the same, printer and optical communication device, which is hereby incorporated herein by reference.
  • Micro-LEDs can be used as display light source. But, they are not suitable for projection display.
  • a projection display apparatus using micro-LEDs requires a complicated optical focusing system, which limits its application.
  • One object of this invention is to provide a new technical solution for a display device using micro laser diodes.
  • a micro laser diode display device comprising: a substrate, wherein first type electrodes are arranged on the substrate; a micro laser diode array of at least one color bonded on the substrate, wherein a first side of micro laser diodes in the micro laser diode array is connected to the first type electrodes; and second type electrodes connected to a second side of the micro laser diodes.
  • the micro laser diodes are of vertical cavity surface emitting laser structure, which includes a lower contact layer, a lower Bragg reflector layer, a lower spacer layer, an active layer, an upper spacer layer, an upper Bragg reflector layer and an upper contact layer.
  • dielectric filler layer is filled among the micro laser diodes.
  • At least one part of the second type electrodes is formed at a lateral side of the micro laser diodes.
  • the second type electrodes are formed on top of the micro laser diodes and the dielectric filler layer, and are patterned so that the micro laser diodes are exposed.
  • the second type electrodes are common electrodes.
  • the at least one color includes red color, blue color and green color.
  • the first type electrodes are anodes and the second type electrodes are cathode.
  • the micro laser diode display device is a projection display device.
  • an electronics apparatus comprising the micro laser diode display device according to the present invention as a projection display source.
  • the present invention can provide a new solution for a display device by using micro laser diodes.
  • Fig. 1 is a schematic cross-section view of a micro laser diode of VCSEL.
  • Fig. 2 is a schematic cross-section view of a micro laser diode device according to an embodiment of the present invention.
  • Fig. 3 is a schematic cross-section view of a micro laser diode device according to another embodiment of the present invention.
  • Fig. 4 is a schematic diagram of a top view of a micro laser diode device according to an embodiment of the present invention.
  • Figs. 5-9 schematically show the process of transferring micro laser diodes from carrier substrates to a receiving substrate according to an embodiment of the present invention.
  • Fig. 1 shows a schematic cross-section view of a micro laser diode of VCSEL.
  • the VCSEL micro laser diode can be used in the embodiments of the present invention.
  • the micro laser diode 100 includes a lower contact layer 107, a lower Bragg reflector layer 106, a lower spacer layer 105, an active layer 104, an upper spacer layer 103, an upper Bragg reflector layer 102 and an upper contact layer 101.
  • the micro laser diode 100 can be mounted on a lower metal electrode 108.
  • Fig. 2 shows a schematic cross-section view of a micro laser diode device according to an embodiment of the present invention.
  • the micro laser diode display device comprises a substrate 213.
  • First type electrodes 214 are arranged on the substrate 213.
  • the substrate 213 may have control and drive circuitries, such as AM TFT (active matrix, thin-film transistor) .
  • the substrate 213 may a silicon substrate with CMOS circuitries.
  • the substrate 213 may a glass backplane with TFT circuitries.
  • the substrate 213 may flexible with circuitries.
  • it may be a flexible printed circuitry board (FPCB) .
  • FPCB flexible printed circuitry board
  • the micro laser diode display device further comprises a micro laser diode array of at least one color 200r, 200g, 200b and second type electrodes 211.
  • the micro laser diode array is bonded on the substrate 213.
  • the first side (lower side) of micro laser diodes 200r, 200g, 200b is connected to the first type electrodes 214, for example, via a bonding layer 215.
  • the second type electrodes 211 are connected to a second side of the micro laser diodes 200r, 200g, 200b.
  • the micro laser diodes can be of VCSEL structure as shown in Fig. 1.
  • the at least one color can include red color, blue color and green color.
  • the first type electrodes are anodes and the second type electrodes are cathode.
  • the diameter of the micro laser diodes may be 1-500 ⁇ m, preferably 10-100 ⁇ m and further preferably 20-50 ⁇ m. In an example, the diameter of the micro laser diodes may be less than 100 ⁇ m.
  • a laser diode is not used in a display device.
  • the micro laser diode display device can be a projection display device and it is used as a light source of a projector. It can project light onto a display screen (display surface) . Because of the highly collimated light emitted by the micro laser diodes, it can offer a focus-free display. Compared with a micro-LED projection display device requiring a complicated optical focusing system due to its limited focal depth, the display solution using micro laser diodes will have advantages. This will lead to a new technical trend for display different from that of micro-LED.
  • a dielectric filler layer 212 is filled among the micro laser diodes 200r, 200g, 200b.
  • This structure is suitable for semiconductor processing. For example, it will facilitate forming the second type electrodes (cathodes) on top of the micro laser diodes. Furthermore, it may provide support to the micro laser diodes. Optionally, it may provide isolation between adjacent micro laser diodes.
  • Fig. 3 shows a schematic cross-section view of a micro laser diode device according to another embodiment of the present invention.
  • the differences between the micro laser diode devices of Fig. 2 and Fig. 3 lie in the second type electrodes 311 and the dielectric filler layer 312.
  • the dielectric filler layer 312 is lower than the micro laser diodes 200r, 200g, 200b. At least one part of the second type electrodes 311 is formed at a lateral side of the micro laser diodes 200r, 200g, 200b. In this way, it may provide a better Ohmic contact between the electrodes and the diodes. Optionally, this may further provide a better thermal dispersion for the micro laser diode.
  • the second type electrodes 311 are formed on top of the micro laser diodes and the dielectric filler layer.
  • the second type electrodes 311 are patterned so that the micro laser diodes 200r, 200g, 200b are exposed.
  • the area of the second type electrode is enlarged. This may improve the thermal dispersion of the device.
  • the second type electrodes 311 may be transparent and is un-patterned. This will simplify the manufacturing of the device.
  • the second type electrodes can be a common electrode and/or be shorted.
  • Fig. 4 shows a schematic diagram of a top view of a micro laser diode device according to an embodiment of the present invention.
  • the micro laser diode device 450 includes red color micro laser diodes 400r, green color micro laser diodes 400g and blue color micro laser diodes 400b. They are arranged in multiple units. Each unit includes one red color micro laser diode 400r, two green color micro laser diodes 400g and one blue color micro laser diode 400b.
  • the green micro laser diodes 400g are redundant. This may improve yield/reliability.
  • the micro laser diode display device can used in an electronics apparatus as a projection display source.
  • the electronics apparatus can be a projector, a projection television, a smart phone with projection display and so on.
  • Figs. 5-9 schematically show the process of transferring micro laser diodes from carrier substrates to a receiving substrate according to an embodiment of the present invention.
  • a bonding layer 515 is formed on a receiving substrate 513.
  • First type electrodes 514 are connected to the bonding layer 515.
  • the first type electrodes 514 can be anodes.
  • a first side (lower side) of the micro laser diodes 500r on a carrier substrate 520 is brought into contact with the bonding layer 514.
  • the carrier substrate 520 is laser-transparent.
  • the micro laser diodes 500r is of red color, for example. It can be the micro laser diodes of VCSEL structure as shown in Fig. 1.
  • Selected micro laser diodes 500r are irradiated with laser 521 from the side of the carrier substrate 520 to lift-off the selected micro laser diodes 500r from the carrier substrate 520.
  • the micro laser diodes 500r are kept on the receiving substrate 513 through a gravity force.
  • an adhesion force of the bonding layer 515 may also be used to keep the micro laser diodes 500r.
  • an electrostatic force may be applied to the micro laser diodes 500r to keep it on the receiving substrate 513.
  • an electromagnetic force may be applied to the micro laser diodes 500r to keep it on the receiving substrate 513.
  • This embodiment proposes a new approach for transferring micro laser diodes. Compared with the prior solution of picking up laser diodes individual with a pick-up head, this embodiment is more suitable for semiconductor processing. For example, it can improve yield. Optionally, it can provide a more efficient transfer. Optionally, the definition of the micro laser diodes may be improved.
  • green color micro laser diodes 500g on a carrier substrate 522 may selectively be transferred to the receiving substrate 513 by using the selective laser 523.
  • blue color micro laser diodes 500b on a carrier substrate 524 may selectively be transferred to the receiving substrate 513 by using the selective laser 525.
  • the processing is similar with the transferring of red color micro laser diodes shown in Fig. 5, and thus is omitted.
  • the bonding layer 515 may be cured.
  • a dielectric filler material is filled among the micro laser diodes 500r, 500g, 500b to form a dielectric filler layer 512.
  • the dielectric filler layer 512 may be flush with the upper surface of the micro laser diodes. Alternatively, it can be etched back lower than the upper surface of the micro laser diodes so that a top electrode may be formed to be in contact with at least one part of the lateral side of a micro laser LED, as shown in Fig. 3.
  • This processing may provide flexibility for a designer or a manufacturer in designing and manufacturing a micro laser diodes device.
  • second type electrodes 511 are formed to be connected to a second side (upper side) of the micro laser diodes 500r, 500g, 500b.
  • an electrode layer are formed on the micro laser diodes 500r, 500g, 500b and the dielectric filler layer 512. Then, the electrode layer is patterned to expose the micro laser diodes to form the second type electrodes 511.
  • the electrode layer is transparent and may not be patterned. This will simplify the manufacture processing and thus may reduce the cost.
  • At least one part of the second type electrodes 511 may be formed at a lateral side of the micro laser diodes 500r, 500g, 500b.
  • the second type electrode 511 may be a common electrode.
  • the first type electrodes 514 are anodes and the second type electrodes 511 are cathode.
  • the diameter of the micro laser diodes 500r, 500g, 500b may be less than 100 ⁇ m.
  • a protection layer may be applied on the top of the transferred micro laser diodes.
  • a method for manufacturing a micro laser diode device may include transferring micro laser diodes to a receiving substrate of the micro laser diode device by using the method according to any of the embodiments of the present invention.
  • the manufacturing method can be used to manufacture the micro laser diode display device according to the embodiments of the present invention.
  • the method can further be used in manufacturing a micro laser diode device, and the micro laser diode device may be used in micro laser printers, optical communications, collimated light sourcing, micro-displays, micro-projections and so on.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)

Abstract

A micro laser diode display device and an electronics apparatus are disclosed. The micro laser diode display device comprises: a substrate (213) / receiving substrate (513), wherein first type electrodes (214,514) are arranged on the substrate (213) / receiving substrate (513); a micro laser diode (200r, 200g, 200b, 400r, 400g, 400b, 500r, 500g, 500b) array of at least one color bonded on the substrate (213) / receiving substrate (513), wherein a first side of micro laser diodes (200r, 200g, 200b, 400r, 400g, 400b, 500r, 500g, 500b) in the micro laser diode array is connected to the first type electrodes (214, 514); and second type electrodes (211, 311, 511) connected to a second side of the micro laser diodes (200r, 200g, 200b, 400r, 400g, 400b, 500r, 500g, 500b).

Description

MICRO LASER DIODE DISPLAY DEVICE AND ELECTRONICS APPARATUS FIELD OF THE INVENTION
The present invention relates to micro laser diodes, and more specifically, to a micro laser diode display device and an electronics apparatus.
BACKGROUND OF THE INVENTION
The laser diode (LD) has been actively developed recently. Generally, a laser diode or a laser diode array is used as a light source for optical communications or a laser printer. The laser diode could be of a vertical cavity surface emitting laser (VCSEL) structure, which includes a lower contact layer, a lower Bragg reflector layer, a lower spacer layer, an active layer, an upper spacer layer, an upper Bragg reflector layer and an upper contact layer.
In the prior art, micro laser diodes are transferred onto a receiving substrate individually. The common electrode for the micro laser diodes is mounted at bottom on the receiving substrate. The top electrodes of the laser diodes are wire-bonded onto the receiving substrate. Although the laser diode is downsizing and thus an individual micro laser diode can be made, traditional assembling approaches are still used in transfer of the micro laser diode. They are not suitable for the application of a micro laser diode. Furthermore, they are not suitable for a display device using micro laser diodes, especially, a high definition (HD) display device.
US patent application No. 2016/0308333 A1 discloses a laser diode array, method of manufacturing the same, printer and optical communication device, which is hereby incorporated herein by reference.
Micro-LEDs can be used as display light source. But, they are not suitable for projection display. A projection display apparatus using micro-LEDs requires a complicated optical focusing system, which limits its application.
US patent No. 9,367,094 B2 discloses a display module and system applications, which is hereby incorporated herein by reference.
Therefore, there is a demand in the art that a new solution for a display device using  micro laser diodes shall be proposed to address at least one of the problems in the prior art.
Therefore, there is a demand in the art that a new solution for display using micro laser diodes shall be proposed to address at least one of the problems in the prior art.
SUMMARY OF THE INVENTION
One object of this invention is to provide a new technical solution for a display device using micro laser diodes.
According to a first aspect of the present invention, there is provided a micro laser diode display device, comprising: a substrate, wherein first type electrodes are arranged on the substrate； a micro laser diode array of at least one color bonded on the substrate, wherein a first side of micro laser diodes in the micro laser diode array is connected to the first type electrodes； and second type electrodes connected to a second side of the micro laser diodes.
Alternatively or optionally, the micro laser diodes are of vertical cavity surface emitting laser structure, which includes a lower contact layer, a lower Bragg reflector layer, a lower spacer layer, an active layer, an upper spacer layer, an upper Bragg reflector layer and an upper contact layer.
Alternatively or optionally, dielectric filler layer is filled among the micro laser diodes.
Alternatively or optionally, at least one part of the second type electrodes is formed at a lateral side of the micro laser diodes.
Alternatively or optionally, the second type electrodes are formed on top of the micro laser diodes and the dielectric filler layer, and are patterned so that the micro laser diodes are exposed.
Alternatively or optionally, the second type electrodes are common electrodes.
Alternatively or optionally, the at least one color includes red color, blue color and green color.
Alternatively or optionally, the first type electrodes are anodes and the second type electrodes are cathode.
Alternatively or optionally, the micro laser diode display device is a projection display device.
According to a second aspect of the present invention, there is provided an electronics apparatus, comprising the micro laser diode display device according to the present invention as a projection display source.
According to an embodiment of this invention, the present invention can provide a new solution for a display device by using micro laser diodes.
Further features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments according to the present invention with reference to the attached drawings.
BRIEF DISCRIPTION OF THE DRAWINGS
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and, together with the description thereof, serve to explain the principles of the invention.
Fig. 1 is a schematic cross-section view of a micro laser diode of VCSEL.
Fig. 2 is a schematic cross-section view of a micro laser diode device according to an embodiment of the present invention.
Fig. 3 is a schematic cross-section view of a micro laser diode device according to another embodiment of the present invention.
Fig. 4 is a schematic diagram of a top view of a micro laser diode device according to an embodiment of the present invention.
Figs. 5-9 schematically show the process of transferring micro laser diodes from carrier substrates to a receiving substrate according to an embodiment of the present invention.
DETAILED DESCRIPTION OF THE EMBODIMENTS
Various exemplary embodiments of the present invention will now be described in detail with reference to the drawings. It should be noted that the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods and apparatus as known by one of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all of the examples illustrated and discussed herein, any specific values should be interpreted to be illustrative only and non-limiting. Thus, other examples of the exemplary embodiments could have different values.
Notice that similar reference numerals and letters refer to similar items in the following figures, and thus once an item is defined in one figure, it is possible that it need not be further discussed for following figures.
Embodiments and examples of the present invention will be described with reference to the drawings.
Fig. 1 shows a schematic cross-section view of a micro laser diode of VCSEL. The VCSEL micro laser diode can be used in the embodiments of the present invention.
As shown in Fig. 1, the micro laser diode 100 includes a lower contact layer 107, a lower Bragg reflector layer 106, a lower spacer layer 105, an active layer 104, an upper spacer layer 103, an upper Bragg reflector layer 102 and an upper contact layer 101.
For example, the micro laser diode 100 can be mounted on a lower metal electrode 108.
Fig. 2 shows a schematic cross-section view of a micro laser diode device according to an embodiment of the present invention.
In Fig. 2, the micro laser diode display device comprises a substrate 213. First type electrodes 214 are arranged on the substrate 213. The substrate 213 may have control and drive circuitries, such as AM TFT (active matrix, thin-film transistor) . For example, the substrate 213 may a silicon substrate with CMOS circuitries. Alternatively, the substrate 213 may a glass backplane with TFT circuitries. Optionally, the substrate 213 may flexible with circuitries. For example, it may be a flexible printed circuitry board (FPCB) .
The micro laser diode display device further comprises a micro laser diode array of  at least one  color  200r, 200g, 200b and second type electrodes 211. The micro laser diode array is bonded on the substrate 213. The first side (lower side) of  micro laser diodes  200r, 200g, 200b is connected to the first type electrodes 214, for example, via a bonding layer 215. The second type electrodes 211 are connected to a second side of the  micro laser diodes  200r, 200g, 200b.
For example, the micro laser diodes can be of VCSEL structure as shown in Fig. 1. The at least one color can include red color, blue color and green color.
For example, the first type electrodes are anodes and the second type electrodes are cathode.
For example, the diameter of the micro laser diodes may be 1-500μm, preferably 10-100μm and further preferably 20-50μm. In an example, the diameter of the micro laser diodes may be less than 100μm.
In the prior art, a laser diode is not used in a display device. In this invention, it is used for display. For example, the micro laser diode display device can be a projection display device and it is used as a light source of a projector. It can project light onto a display screen (display surface) . Because of the highly collimated light emitted by the micro laser diodes, it can offer a focus-free display. Compared with a micro-LED projection display device requiring a complicated optical focusing system due to its limited focal depth, the display solution using micro laser diodes will have advantages. This will lead to a new technical trend for display different from that of micro-LED.
As shown in Fig. 2, a dielectric filler layer 212 is filled among the  micro laser diodes  200r, 200g, 200b. This structure is suitable for semiconductor processing. For example, it will facilitate forming the second type electrodes (cathodes) on top of the micro laser diodes. Furthermore, it may provide support to the micro laser diodes. Optionally, it may provide isolation between adjacent micro laser diodes.
Fig. 3 shows a schematic cross-section view of a micro laser diode device according to another embodiment of the present invention. The differences between the micro laser diode devices of Fig. 2 and Fig. 3 lie in the second type electrodes 311 and the dielectric filler layer 312.
In an example, as shown in Fig. 3, the dielectric filler layer 312 is lower than the  micro laser diodes  200r, 200g, 200b. At least one part of the second type electrodes 311 is formed at a lateral side of the  micro laser diodes  200r, 200g, 200b. In this way, it may provide a better Ohmic contact between the electrodes and the diodes. Optionally, this may further provide a better thermal dispersion for the micro laser diode.
In another example, as shown in Fig. 3, the second type electrodes 311 are formed on top of the micro laser diodes and the dielectric filler layer. The second type electrodes 311 are patterned so that the  micro laser diodes  200r, 200g, 200b are exposed. Compared with the micro laser diode display device of Fig. 2, the area of the second type electrode is enlarged. This may improve the thermal dispersion of the device.
Alternatively, the second type electrodes 311 may be transparent and is un-patterned. This will simplify the manufacturing of the device.
The second type electrodes can be a common electrode and/or be shorted.
It would be understood by a person skilled in the art that although the above two examples are shown in one figure, they can be implemented separately or in combination.
Fig. 4 shows a schematic diagram of a top view of a micro laser diode device according to an embodiment of the present invention.
As shown in Fig. 4, the micro laser diode device 450 includes red color micro laser diodes 400r, green color micro laser diodes 400g and blue color micro laser diodes 400b. They are arranged in multiple units. Each unit includes one red color micro laser diode 400r, two green color micro laser diodes 400g and one blue color micro laser diode 400b.
As shown in Fig. 4, the green micro laser diodes 400g are redundant. This may improve yield/reliability.
The micro laser diode display device according to the embodiments of the present invention can used in an electronics apparatus as a projection display source. The electronics apparatus can be a projector, a projection television, a smart phone with projection display and so on.
Below, a method for transferring micro laser diodes will be described with reference to Figs. 5-9.
Figs. 5-9 schematically show the process of transferring micro laser diodes from carrier substrates to a receiving substrate according to an embodiment of the present invention.
As shown in Fig. 5, a bonding layer 515 is formed on a receiving substrate 513. First type electrodes 514 are connected to the bonding layer 515. The first type electrodes 514 can be anodes.
A first side (lower side) of the micro laser diodes 500r on a carrier substrate 520 is brought into contact with the bonding layer 514. The carrier substrate 520 is laser-transparent.
In Fig. 5, the micro laser diodes 500r is of red color, for example. It can be the micro laser diodes of VCSEL structure as shown in Fig. 1.
Selected micro laser diodes 500r are irradiated with laser 521 from the side of the carrier substrate 520 to lift-off the selected micro laser diodes 500r from the carrier substrate 520.
For example, during lifting-off, the micro laser diodes 500r are kept on the receiving substrate 513 through a gravity force. Alternatively, an adhesion force of the bonding layer 515 may also be used to keep the micro laser diodes 500r. Further alternatively, an electrostatic force may be applied to the micro laser diodes 500r to keep it on the receiving substrate 513. Even further alternatively, an electromagnetic force may be applied to the micro laser diodes 500r to keep it on the receiving substrate 513. The above approaches can be used individually or in any combination.
This embodiment proposes a new approach for transferring micro laser diodes. Compared with the prior solution of picking up laser diodes individual with a pick-up head, this embodiment is more suitable for semiconductor processing. For example, it can improve yield. Optionally, it can provide a more efficient transfer. Optionally, the definition of the micro laser diodes may be improved.
As shown in Fig. 6, green color micro laser diodes 500g on a carrier substrate 522 may selectively be transferred to the receiving substrate 513 by using the selective laser 523. As shown in Fig. 7, blue color micro laser diodes 500b on a carrier substrate 524 may  selectively be transferred to the receiving substrate 513 by using the selective laser 525. The processing is similar with the transferring of red color micro laser diodes shown in Fig. 5, and thus is omitted.
After transferring, the bonding layer 515 may be cured.
As shown in Fig. 8, a dielectric filler material is filled among the  micro laser diodes  500r, 500g, 500b to form a dielectric filler layer 512. The dielectric filler layer 512 may be flush with the upper surface of the micro laser diodes. Alternatively, it can be etched back lower than the upper surface of the micro laser diodes so that a top electrode may be formed to be in contact with at least one part of the lateral side of a micro laser LED, as shown in Fig. 3.
This processing may provide flexibility for a designer or a manufacturer in designing and manufacturing a micro laser diodes device.
As shown in Fig. 9, second type electrodes 511 are formed to be connected to a second side (upper side) of the  micro laser diodes  500r, 500g, 500b.
For example, during the second type electrodes 511 are formed, an electrode layer are formed on the  micro laser diodes  500r, 500g, 500b and the dielectric filler layer 512. Then, the electrode layer is patterned to expose the micro laser diodes to form the second type electrodes 511.
Alternatively, the electrode layer is transparent and may not be patterned. This will simplify the manufacture processing and thus may reduce the cost.
Although it is not shown, at least one part of the second type electrodes 511 may be formed at a lateral side of the  micro laser diodes  500r, 500g, 500b.
For example, the second type electrode 511 may be a common electrode.
For example, the first type electrodes 514 are anodes and the second type electrodes 511 are cathode.
For example, the diameter of the  micro laser diodes  500r, 500g, 500b may be less than 100μm.
For example, a protection layer may be applied on the top of the transferred micro laser diodes.
In another embodiment, a method for manufacturing a micro laser diode device may include transferring micro laser diodes to a receiving substrate of the micro laser diode device by using the method according to any of the embodiments of the present invention.
For example, the manufacturing method can be used to manufacture the micro laser diode display device according to the embodiments of the present invention. Alternatively, the method can further be used in manufacturing a micro laser diode device, and the micro laser diode device may be used in micro laser printers, optical communications, collimated light sourcing, micro-displays, micro-projections and so on.
Although some specific embodiments of the present invention have been demonstrated in detail with examples, it should be understood by a person skilled in the art that the above examples are only intended to be illustrative but not to limit the scope of the present invention.

Claims (10)

  1. A micro laser diode display device, comprising:
    a substrate, wherein first type electrodes are arranged on the substrate；
    a micro laser diode array of at least one color bonded on the substrate, wherein a first side of micro laser diodes in the micro laser diode array is connected to the first type electrodes； and
    second type electrodes connected to a second side of the micro laser diodes.
  2. The micro laser diode display device according to claim 1, wherein the micro laser diodes are of vertical cavity surface emitting laser structure, which includes a lower contact layer, a lower Bragg reflector layer, a lower spacer layer, an active layer, an upper spacer layer, an upper Bragg reflector layer and an upper contact layer.
  3. The micro laser diode display device according to claim 1 or 2, wherein dielectric filler layer is filled among the micro laser diodes.
  4. The micro laser diode display device according to any of claims 1-3, wherein at least one part of the second type electrodes is formed at a lateral side of the micro laser diodes.
  5. The micro laser diode display device according to any of claims 1-4, wherein the second type electrodes are formed on top of the micro laser diodes and the dielectric filler layer, and are patterned so that the micro laser diodes are exposed.
  6. The micro laser diode display device according to any of claims 1-5, wherein the second type electrodes are common electrodes.
  7. The micro laser diode display device according to any of claims 1-6, wherein the at least one color includes red color, blue color and green color.
  8. The micro laser diode display device according to any of claims 1-7, wherein the first type electrodes are anodes and the second type electrodes are cathode.
  9. The micro laser diode display device according to any of claims 1-8, wherein the micro laser diode display device is a projection display device.
  10. An electronics apparatus, comprising the micro laser diode display device according to any of claims 1-9 as a projection display source.
PCT/CN2016/108513 2016-12-05 2016-12-05 Micro laser diode display device and electronics apparatus Ceased WO2018102955A1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021183594A1 (en) * 2020-03-10 2021-09-16 Facebook Technologies, Llc Integrating control circuits with light emissive circuits with dissimilar wafer sizes
US11424595B2 (en) * 2018-01-09 2022-08-23 Oepic Semiconductors, Inc. Pillar confined backside emitting VCSEL
US11757255B2 (en) * 2018-01-26 2023-09-12 Oepic Semiconductors, Inc. Planarization of backside emitting VCSEL and method of manufacturing the same for array application

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202512546A (en) * 2020-12-28 2025-03-16 大陸商上海顯耀顯示科技有限公司 Micro-led structure and micro-led chip including same
US20240204486A1 (en) * 2022-12-16 2024-06-20 Ii-Vi Delaware, Inc. Red-green-blue, vertical-cavity, surface-emitting laser array

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030026303A1 (en) * 1998-07-22 2003-02-06 Toshihiko Ouchi Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
CN1957293A (en) * 2004-05-28 2007-05-02 伊斯曼柯达公司 Display device using vertical cavity laser arrays
CN103412406A (en) * 2013-07-30 2013-11-27 中国科学院半导体研究所 Red light semiconductor area array light source device for laser display
CN105225644A (en) * 2015-11-05 2016-01-06 苏州苏大维格光电科技股份有限公司 A kind of laser display apparatus and preparation method thereof
CN105493297A (en) * 2015-05-21 2016-04-13 歌尔声学股份有限公司 Transfer method, manufacturing method, device and electronic equipment of micro light emitting diode
CN105493257A (en) * 2015-07-14 2016-04-13 歌尔声学股份有限公司 Assembling method and manufacturing method and apparatus of flip bare chip, and electronic equipment

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4211586A (en) * 1977-09-21 1980-07-08 International Business Machines Corporation Method of fabricating multicolor light emitting diode array utilizing stepped graded epitaxial layers
US5244818A (en) * 1992-04-08 1993-09-14 Georgia Tech Research Corporation Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
US5325386A (en) * 1992-04-21 1994-06-28 Bandgap Technology Corporation Vertical-cavity surface emitting laser assay display system
GB2277405A (en) * 1993-04-22 1994-10-26 Sharp Kk Semiconductor colour display or detector array
KR100486803B1 (en) * 1996-06-18 2005-06-16 소니 가부시끼 가이샤 Selfluminous display device
US5963568A (en) * 1996-07-01 1999-10-05 Xerox Corporation Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
US6229503B1 (en) * 1998-08-25 2001-05-08 Robert Mays, Jr. Miniature personal display
JP3990846B2 (en) * 1999-08-27 2007-10-17 キヤノン株式会社 Planar optical element, method for manufacturing the same, and apparatus using the same
US6746777B1 (en) * 2000-05-31 2004-06-08 Applied Optoelectronics, Inc. Alternative substrates for epitaxial growth
US6741629B1 (en) * 2000-09-22 2004-05-25 Blueleaf, Inc. Optical transmitter having optically pumped vertical external cavity surface emitting laser
TWI227799B (en) * 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
US6790691B2 (en) * 2001-06-29 2004-09-14 Xanoptix, Inc. Opto-electronic device integration
US6620642B2 (en) * 2001-06-29 2003-09-16 Xanoptix, Inc. Opto-electronic device integration
US6753197B2 (en) * 2001-06-29 2004-06-22 Xanoptix, Inc. Opto-electronic device integration
US6724794B2 (en) * 2001-06-29 2004-04-20 Xanoptix, Inc. Opto-electronic device integration
US6775308B2 (en) * 2001-06-29 2004-08-10 Xanoptix, Inc. Multi-wavelength semiconductor laser arrays and applications thereof
US20030031218A1 (en) * 2001-08-13 2003-02-13 Jang-Hun Yeh VCSEL structure and method of making same
US6692979B2 (en) * 2001-08-13 2004-02-17 Optoic Technology, Inc. Methods of fabricating optoelectronic IC modules
TW522534B (en) * 2001-09-11 2003-03-01 Hsiu-Hen Chang Light source of full color LED using die bonding and packaging technology
US6953702B2 (en) * 2002-05-16 2005-10-11 Agilent Technologies, Inc. Fixed wavelength vertical cavity optical devices and method of manufacture therefor
JP2004022901A (en) * 2002-06-18 2004-01-22 Seiko Epson Corp Optical interconnection integrated circuit, method of manufacturing optical interconnection integrated circuit, electro-optical device, and electronic apparatus
US6807211B1 (en) * 2003-05-27 2004-10-19 Eastman Kodak Company White-light laser
JP2005116933A (en) * 2003-10-10 2005-04-28 Sony Corp Surface emitting laser element array and method for manufacturing surface emitting laser element array
US20050079642A1 (en) * 2003-10-14 2005-04-14 Matsushita Elec. Ind. Co. Ltd. Manufacturing method of nitride semiconductor device
US8802465B2 (en) * 2005-01-11 2014-08-12 SemiLEDs Optoelectronics Co., Ltd. Method for handling a semiconductor wafer assembly
TWI344314B (en) * 2005-10-14 2011-06-21 Hon Hai Prec Ind Co Ltd Light-emitting element, plane light source and direct-type backlight module
JP2007173393A (en) * 2005-12-20 2007-07-05 Denso Corp Laser equipment
MY149292A (en) * 2007-01-17 2013-08-30 Univ Illinois Optical systems fabricated by printing-based assembly
CN102683376A (en) * 2007-01-22 2012-09-19 科锐公司 High-pressure light emitter, light emitter and illumination device
US7687812B2 (en) * 2007-06-15 2010-03-30 Tpo Displays Corp. Light-emitting diode arrays and methods of manufacture
JP2009010248A (en) * 2007-06-29 2009-01-15 Canon Inc Surface emitting laser and manufacturing method thereof
WO2009143462A2 (en) * 2008-05-22 2009-11-26 Vi Systems Gmbh Method for attaching optical components onto silicon-based integrated circuits
WO2010138524A2 (en) * 2009-05-27 2010-12-02 The Regents Of The University Of California Monolithically integrated multi-wavelength high-contrast grating vcsel array
CN102714396B (en) * 2010-01-29 2014-12-10 惠普发展公司，有限责任合伙企业 Multimode Vertical Cavity Surface Emitting Laser Array
US8912017B2 (en) * 2011-05-10 2014-12-16 Ostendo Technologies, Inc. Semiconductor wafer bonding incorporating electrical and optical interconnects
US9293641B2 (en) * 2011-11-18 2016-03-22 Invensas Corporation Inverted optical device
JP6303255B2 (en) * 2011-12-02 2018-04-04 株式会社リコー Surface emitting laser element and atomic oscillator
WO2013112435A1 (en) * 2012-01-24 2013-08-01 Cooledge Lighting Inc. Light - emitting devices having discrete phosphor chips and fabrication methods
US9773750B2 (en) * 2012-02-09 2017-09-26 Apple Inc. Method of transferring and bonding an array of micro devices
US9424775B2 (en) * 2012-10-15 2016-08-23 The Hong Kong University Of Science And Technology LEDoS projection system
US9035279B2 (en) * 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
CN105899870B (en) * 2013-11-20 2019-10-01 三流明公司 For laser array output group to be combined into the system for carrying the single light beam of numerical data
WO2016190919A2 (en) * 2015-01-30 2016-12-01 University Of Southern California Micro-vcsels in thermally engineered flexible composite assemblies
US9728934B2 (en) * 2015-08-31 2017-08-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Back-side-emitting vertical cavity surface emitting laser (VCSEL) wafer bonded to a heat-dissipation wafer, devices and methods
US10177127B2 (en) * 2015-09-04 2019-01-08 Hong Kong Beida Jade Bird Display Limited Semiconductor apparatus and method of manufacturing the same
CN105870265A (en) * 2016-04-19 2016-08-17 京东方科技集团股份有限公司 Light-emitting diode substrate and preparation method thereof and display device
US10033158B1 (en) * 2016-12-19 2018-07-24 Osram Opto Semiconductors Gmbh Semiconductor laser, laser assembly and method of making a semiconductor laser
US11637409B2 (en) * 2017-03-27 2023-04-25 Hamamatsu Photonics K.K. Semiconductor light-emitting module and control method therefor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030026303A1 (en) * 1998-07-22 2003-02-06 Toshihiko Ouchi Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
CN1957293A (en) * 2004-05-28 2007-05-02 伊斯曼柯达公司 Display device using vertical cavity laser arrays
CN103412406A (en) * 2013-07-30 2013-11-27 中国科学院半导体研究所 Red light semiconductor area array light source device for laser display
CN105493297A (en) * 2015-05-21 2016-04-13 歌尔声学股份有限公司 Transfer method, manufacturing method, device and electronic equipment of micro light emitting diode
CN105493257A (en) * 2015-07-14 2016-04-13 歌尔声学股份有限公司 Assembling method and manufacturing method and apparatus of flip bare chip, and electronic equipment
CN105225644A (en) * 2015-11-05 2016-01-06 苏州苏大维格光电科技股份有限公司 A kind of laser display apparatus and preparation method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11424595B2 (en) * 2018-01-09 2022-08-23 Oepic Semiconductors, Inc. Pillar confined backside emitting VCSEL
US11757255B2 (en) * 2018-01-26 2023-09-12 Oepic Semiconductors, Inc. Planarization of backside emitting VCSEL and method of manufacturing the same for array application
WO2021183594A1 (en) * 2020-03-10 2021-09-16 Facebook Technologies, Llc Integrating control circuits with light emissive circuits with dissimilar wafer sizes
CN115136305A (en) * 2020-03-10 2022-09-30 元平台技术有限公司 Integrated control circuit with light emitting circuits having dissimilar wafer sizes
US11842989B2 (en) 2020-03-10 2023-12-12 Meta Platforms Technologies, Llc Integrating control circuits with light emissive circuits with dissimilar wafer sizes
US12224271B2 (en) 2020-03-10 2025-02-11 Meta Platforms Technologies, Llc Integrating control circuits with light emissive circuits with dissimilar wafer sizes
US12355022B2 (en) 2020-03-10 2025-07-08 Meta Platforms Technologies, Llc Display projector systems and devices for augmented-reality

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