WO2018090618A1 - 一种微波传输装置和半导体处理设备 - Google Patents

一种微波传输装置和半导体处理设备 Download PDF

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Publication number
WO2018090618A1
WO2018090618A1 PCT/CN2017/088979 CN2017088979W WO2018090618A1 WO 2018090618 A1 WO2018090618 A1 WO 2018090618A1 CN 2017088979 W CN2017088979 W CN 2017088979W WO 2018090618 A1 WO2018090618 A1 WO 2018090618A1
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WIPO (PCT)
Prior art keywords
waveguide
metal piece
microwave transmission
finger
transmission device
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Ceased
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PCT/CN2017/088979
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English (en)
French (fr)
Inventor
刘春明
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of WO2018090618A1 publication Critical patent/WO2018090618A1/zh
Priority to US16/411,408 priority Critical patent/US10937633B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H01P3/081—Microstriplines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/12—Hollow waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
    • H01P5/022—Transitions between lines of the same kind and shape, but with different dimensions
    • H01P5/024—Transitions between lines of the same kind and shape, but with different dimensions between hollow waveguides
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/383—Impedance-matching networks comprising distributed impedance elements together with lumped impedance elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment

Definitions

  • the present invention relates to the field of semiconductor device processing technologies, and in particular, to a microwave transmission device and a semiconductor processing device.
  • CCP capacitive coupled plasma
  • ICP inductively coupled plasma
  • ECR surface wave or electron cyclotron resonance plasma
  • FIG. 1 the structure of a relatively common surface wave plasma excitation device is shown in FIG. 1 , which includes a microwave source and a microwave transmission structure, a surface wave antenna structure and a chamber.
  • the microwave source and the microwave transmission structure include a microwave source power supply 3, a microwave source (magnetron) 4, a resonator 5, a circulator 6, a load 7 for absorbing reflected power, and a measurement of incident power and reflected power.
  • the chamber includes a resonant cavity 11 for exciting plasma, a quartz dielectric window 12, a vacuum chamber 13 and a sealing ring 14 that seals the vacuum chamber 13 and the resonant cavity 11. Also, a support table 16 for placing the wafer 15 to be processed is disposed in the vacuum chamber 13.
  • the impedance matching structure 2 includes a metal pin 91 disposed in the waveguide 1. Or the metal diaphragm 92, the metal pin 91 or the metal diaphragm 92 can form an equivalent capacitance and an equivalent inductance in the waveguide 1, thereby achieving impedance matching between the microwave source and the load.
  • the metal pin or the metal diaphragm as an impedance matching structure forms a equivalent capacitance and an equivalent inductance in the waveguide 1 as a fixed value, it can only be used as a single fixed reactance element, and therefore, the metal pin or the metal diaphragm only It can be applied to load impedance matching with fixed or small changes, and it is difficult to adapt to impedance matching under load changes.
  • the impedance matching structure may also adopt an adjustable screw structure, that is, a screw 93 is provided in the waveguide 1, the screw 93 is from the center of the long side of the waveguide 1, perpendicular to the waveguide The face is inserted into the inside of the waveguide 1, and the portion of the screw 93 that enters the inside of the waveguide 1 forms an equivalent capacitance and an equivalent inductance.
  • an adjustable screw structure that is, a screw 93 is provided in the waveguide 1, the screw 93 is from the center of the long side of the waveguide 1, perpendicular to the waveguide
  • the face is inserted into the inside of the waveguide 1, and the portion of the screw 93 that enters the inside of the waveguide 1 forms an equivalent capacitance and an equivalent inductance.
  • the present invention is directed to the above-mentioned technical problems existing in the prior art, and provides a microwave transmission device and a semiconductor processing device having a large operating frequency range and a suitable scenario.
  • a microwave transmission apparatus including a waveguide and an impedance matching structure disposed in the waveguide, the waveguide for transmitting microwaves emitted from a microwave source to a load;
  • the impedance matching structure includes a microstrip interdigital capacitance, which is realized by adjusting an equivalent capacitance formed by the microstrip interdigital capacitance and/or a position of the microstrip interdigital capacitance in an extending direction of the waveguide.
  • the impedance before the input of the impedance matching structure matches the impedance after the input of the impedance matching structure.
  • the microstrip interdigital capacitor comprises a first metal piece and a second metal piece, the first gold
  • the base piece and the second metal piece both include a finger and a finger joint, wherein
  • the plurality of fingers are plural, and the plurality of fingers are parallel to each other and are arranged at intervals;
  • the finger connecting portion is connected to one end of each of the fingers, and the finger connecting portion is perpendicular to each of the fingers, and all the fingers are located on the same side of the finger connecting portion;
  • the first metal piece and the second metal piece are located in the same plane, and the fingers of the first metal piece and the fingers of the second metal piece are arranged in a one-to-one correspondence.
  • the number of fingers of each of the first metal piece and the second metal piece is greater than or equal to 3.
  • the equivalent capacitance formed by the interdigitated capacitance of the microstrip is adjusted by setting different finger numbers of the first metal piece and the second metal piece; and/or
  • Adjusting the equivalent capacitance formed by the interdigitated capacitance of the microstrip by setting a spacing between the fingers of the different first metal sheets and the fingers of the second metal sheet adjacent thereto .
  • the impedance matching structure further includes a capacitance adjusting mechanism for adjusting a horizontal interval between the finger of the first metal piece and the finger of the second metal piece adjacent thereto in real time; And/or adjusting the position of the first metal piece and/or the second metal piece in the extending direction of the waveguide.
  • a capacitance adjusting mechanism for adjusting a horizontal interval between the finger of the first metal piece and the finger of the second metal piece adjacent thereto in real time; And/or adjusting the position of the first metal piece and/or the second metal piece in the extending direction of the waveguide.
  • the capacitance adjusting mechanism includes a first adjusting mechanism disposed on an inner wall of the waveguide and movable along an extending direction of the waveguide;
  • the first adjustment mechanism is coupled to the first metal piece
  • the second metal piece is fixed to an inner wall of the waveguide.
  • the capacitance adjusting mechanism includes a second adjusting mechanism disposed on an inner wall of the waveguide and movable along an extending direction of the waveguide;
  • the second adjustment mechanism is coupled to the second metal piece
  • the second metal piece is fixed to an inner wall of the waveguide.
  • the capacitance adjustment mechanism includes a first adjustment mechanism and a second adjustment mechanism, wherein
  • the first adjustment mechanism is disposed on an inner wall of the waveguide and movable along an extending direction of the waveguide; the first adjustment mechanism is coupled to the first metal piece;
  • the second adjustment mechanism is disposed on an inner wall of the waveguide and movable along an extending direction of the waveguide; and the second adjustment mechanism is coupled to the second metal piece.
  • a first long groove is disposed on an inner wall of the waveguide, and a length direction of the first long groove is disposed along an extending direction of the waveguide;
  • the first adjustment mechanism includes:
  • a first adjustment rod disposed in the first long groove and movable along a length direction of the first long groove, and the first adjustment rod and the finger of the first metal piece Connection connection;
  • a first fixing member embedded in the first long groove for defining the first adjusting rod in the first long groove.
  • At least a portion of the finger connecting portion of the first metal piece extends into the first long groove and conforms to the groove wall of the first long groove.
  • a second long groove is disposed on an inner wall of the waveguide, and a length direction of the second long groove is disposed along an extending direction of the waveguide;
  • the second adjustment mechanism includes:
  • a second adjustment rod disposed in the second long groove and movable along a length direction of the second long groove, and the second adjustment rod and the finger of the second metal piece Connection connection;
  • At least a portion of the finger connecting portion of the second metal piece extends into the second long groove and conforms to the groove wall of the second long groove.
  • the first adjustment mechanism further includes a first driving portion
  • the first driving portion is configured to drive the first adjusting rod to move along an extending direction of the waveguide.
  • the second adjustment mechanism further includes a second driving portion
  • the second driving portion is configured to drive the second adjusting rod to move along an extending direction of the waveguide.
  • the first driving portion comprises a motor or a driving handle.
  • the second driving portion comprises a motor or a driving handle.
  • the first adjusting rod and the first fixing member are both conductors.
  • the second adjusting rod and the second fixing member are both conductors.
  • the present invention further provides a semiconductor processing apparatus including a microwave source, a microwave transmission device, and a chamber for transmitting microwaves emitted by the microwave source to the chamber.
  • the microwave transmission device described above employs the above-described microwave transmission device provided by the present invention.
  • the impedance matching structure adopts a microstrip interdigital capacitance, and the position of the equivalent capacitance formed by the interdigital capacitance of the microstrip and/or the interdigitated capacitance of the microstrip in the extending direction of the waveguide is The impedance before the input of the impedance matching structure is matched to the impedance after the input of the impedance matching structure. Since the adjustment range of the microstrip interdigital capacitor is not limited by the waveguide structure and size, compared with the prior art, the impedance adjustment range of the impedance matching structure can be increased, thereby expanding the applicable operating frequency range of the microwave transmission device and Applicable scene.
  • the semiconductor processing apparatus provided by the present invention can improve the absorption efficiency of microwaves in a plasma source by using the above-mentioned microwave transmission device provided by the present invention, thereby making plasma stability and output beam intensity.
  • FIG. 1 is a schematic structural view of a surface wave plasma excitation device in the prior art
  • FIG. 2 is a schematic structural view of a prior art impedance matching structure using a metal pin
  • FIG. 3 is a schematic structural view of a prior art impedance matching structure using a metal diaphragm
  • FIG. 4 is a schematic structural view of a prior art impedance matching structure using an adjustable length screw
  • FIG. 5 is a cross-sectional view of a microwave transmission device according to an embodiment of the present invention, perpendicular to a direction in which a waveguide extends;
  • FIG. 6 is a cross-sectional view of a microwave transmission device according to an embodiment of the present invention, which is parallel to a direction in which a waveguide extends;
  • FIG. 7 is a structural diagram of a microstrip interdigital capacitor according to an embodiment of the present invention.
  • microwave transmission device and the semiconductor processing device provided by the present invention are further described in detail below with reference to the accompanying drawings and specific embodiments.
  • the present embodiment provides a microwave transmission device, as shown in FIGS. 5 and 6, comprising a waveguide 1 and an impedance matching structure 2 disposed in the waveguide 1, wherein the waveguide 1 is used to transmit microwaves emitted by the microwave source to the load.
  • the load is generally a chamber including: a resonant cavity for exciting plasma, a quartz dielectric window, a vacuum cavity, a sealing ring for sealing the vacuum cavity and the resonant cavity, and a cavity disposed in the vacuum cavity
  • the specific structure is shown in FIG.
  • the impedance matching structure 2 is capable of achieving an impedance generated by all components before its input (on the microwave source side), and an impedance generated by all components after its input (on the load side), including the impedance matching structure itself.
  • the input end of the impedance matching structure 2 is the upstream end of the impedance matching structure 2 in the transmission direction of the microwave.
  • the impedance matching structure 2 includes a microstrip interdigital capacitor 21, and the equivalent capacitance formed by adjusting the microstrip interdigital capacitance 21 and/or the microstrip interdigital capacitance 21 in the extending direction of the waveguide (ie, the transmission direction of the microwave)
  • the upper position is such that the impedance before the input of the impedance matching structure 2 matches the impedance after the input of the impedance matching structure 2. Due to The adjustment range of the microstrip interdigital capacitor 21 is not limited by the waveguide structure and size, which can increase the impedance adjustment range of the impedance matching structure compared with the prior art, thereby expanding the applicable operating frequency range of the microwave transmission device and Applicable scene.
  • the microstrip interdigital capacitor 21 includes a first metal piece 211 and a second metal piece 212, both of which include: a finger 200 and a finger connecting portion 201, wherein the finger There are a plurality of 200, a plurality of fingers 200 are spaced apart, and are parallel to each other, the finger connecting portion 201 is connected to one end of each finger 200, and the finger connecting portion 201 is perpendicular to each finger 200, and all the fingers 200 are located at the finger connection. The same side of the part 201.
  • the first metal piece 211 and the second metal piece 212 are located in the same plane, and the fingers 200 of the first metal piece 211 and the fingers 200 of the second metal piece 212 are opposite in direction, and are arranged in a one-to-one correspondence, that is, each phase
  • a finger 200 of the second metal piece 212 is disposed between the fingers 200 of the adjacent two first metal pieces 211, and the finger 200 of the first metal piece 211 and the finger 200 of the second metal piece 212 are in the length direction of the finger 200 At least some of them overlap each other.
  • the width of the finger connecting portion 201 is W
  • the width of the finger 200 is S
  • the finger 200 of the first metal piece 211 and the finger 200 of the second metal piece 212 is W
  • the length of the overlapping portions in the longitudinal direction of the finger is L
  • the distance between the finger 200 of the first metal piece 211 and the finger 200 of the second metal piece 212 adjacent thereto is M.
  • the microwaves When microwaves are introduced into the waveguide 1, the microwaves excite high-order modes at the interface of the first metal piece 211 and the second metal piece 212, and the electric field generated by the microwaves is concentrated at the interface of the metal piece 211 and the second metal piece 212.
  • the adjacent two fingers 200 can be regarded as a plurality of parallel parallel plate capacitors, equivalent to a capacitor connected in the waveguide 1.
  • the first metal piece 211 and the second metal piece 212 The finger 200 is equivalent to the inductance of the parallel connection in the waveguide 1.
  • the overall structure of the microstrip interdigital capacitor 21 forms a series resonant loop of inductance and capacitance.
  • the principle of adjusting the impedance by adjusting the equivalent capacitance of the microstrip interdigital capacitor 21 is that the first metal piece 211 and the second metal piece 212 located on the inner wall of the waveguide 1 can cause discontinuity in the structure in which the waveguide 1 transmits microwaves. This makes the boundary condition of the single-mode electric wave transmitted in the waveguide 1 unable to satisfy the condition that the tangential electric field is zero, so that in order to cancel these tangential electric field components, the edges of the first metal piece 211 and the second metal piece 212 are bound to Excite high-order modes.
  • These high-order mode waves are cut-off waves for the selected waveguide 1 for transmitting single-mode electric waves, and cannot be transmitted along the waveguide 1, and can only be concentrated in the vicinity of the metal piece, which is equivalent to a capacitor for storing energy. Since the material and shape of the microstrip interdigital capacitor 21 itself have a resistance and a distributed inductance, the impedance can be adjusted by adjusting the equivalent capacitance of the microstrip interdigital capacitor 21.
  • the number of fingers of each of the first metal piece 211 and the second metal piece 212 is greater than or equal to 3, preferably 4.
  • the finger 200 of the first metal piece 211 is four, and the finger 200 of the second metal piece 212 is three. As shown in FIG. 7 , all the fingers 200 (7 in total) are left according to FIG. 7 .
  • the three-finger capacitor C 3 is formed by the first finger, the second finger and the third finger from the left; n-3 periodic capacitors C n are from the fourth finger from the left and The fifth finger is formed; C end is formed by the sixth finger and the seventh finger from the left.
  • the microstrip interdigital capacitor 21 can be formed into equivalent capacitors of different sizes, that is, the equivalent capacitance of the microstrip interdigital capacitor 21 can be adjusted, and
  • the adjustment range of the equivalent capacitance of the microstrip interdigital capacitor 21 is also different depending on the change in structure and/or size. It can be seen that the adjustment range of the microstrip interdigital capacitor 21 is not limited by the waveguide structure and size, so that the impedance adjustment range of the impedance matching structure is compared with the prior art. Larger, in turn, can expand the operating frequency range and applicable scenarios for microwave transmission devices.
  • the total capacitance can be adjusted by setting different numbers of the fingers of the first metal piece 211 and the second metal piece 212, so that the equivalent capacitance formed by the microstrip interdigital capacitance 21 can be adjusted; and Alternatively, the three-finger capacitor C 3 , n-3 cycles can be adjusted by setting the length L of the finger 200 of the different first metal piece 211 and the finger 200 of the second metal piece 212 along the length direction of the finger.
  • the capacitor C n or the terminal capacitance C end can be adjusted to adjust the equivalent capacitance formed by the microstrip interdigital capacitor 21; and/or by setting the finger 200 of the different first metal piece 211 and the adjacent one thereof
  • the spacing M between the fingers 200 of the two metal sheets 212 can adjust the above three-finger capacitance C 3 , n-3 periodic capacitance C n or the interdigitated terminal capacitance C end , so that the formation of the microstrip interdigital capacitor 21 can be adjusted. Effective capacitance. It is easy to understand that after the structure and/or size setting of the microstrip interdigital capacitor 21 is completed, the equivalent capacitance value formed by the microstrip interdigital capacitor 21 is fixed and does not change in real time.
  • the equivalent capacitance of the microstrip interdigital capacitor 21 can be adjusted.
  • This method has a small adjustment range and satisfies the requirement of impedance matching only by fine-tuning.
  • impedance matching can be achieved by adjusting the position of the microstrip interdigital capacitor 21 in the extending direction of the waveguide 1. Further, by adjusting the position of the microstrip interdigital capacitance 21 in the extending direction of the waveguide 1, the length of the portion of the waveguide 1 before the input end of the impedance matching structure 2 can be changed while changing the input of the waveguide 1 at the impedance matching structure 2.
  • the length of the portion after the end changes the impedance before and after the input end of the impedance matching structure 2, and finally achieves the purpose of matching the two.
  • the impedance of the input end of the matching structure 2 can be adjusted to a large extent, so that the load impedance variation range can be satisfied.
  • the impedance adjustment range of the impedance matching structure 2 can be made larger, so that the applicable operating frequency range and applicable scene of the microwave transmission device can be further expanded.
  • the above two methods of adjusting the impedance may be performed according to a specific situation.
  • the impedance matching structure 2 further includes a capacitance adjusting mechanism for adjusting the first metal in real time.
  • the capacitance adjusting mechanism includes a first adjusting mechanism 22, and the first adjusting mechanism 22 is provided. It is on the inner wall of the waveguide 1 and is movable in the extending direction of the waveguide 1 (i.e., the direction in which the waveguide transmits microwaves). Moreover, the first adjustment mechanism 22 is coupled to the first metal piece 211 to drive the first metal piece 211 to move along the extending direction of the waveguide 1. The second metal piece 212 is fixed to the inner wall of the waveguide 1.
  • the first metal piece 211 can move relative to the second metal piece 212 in the extending direction of the waveguide 1, so that the finger 200 of the first metal piece 211 and the adjacent thereto Adjustment of the spacing M between the fingers 200 of the second metal piece 212.
  • first metal piece 211 and the second metal piece 212 are disposed opposite to each other, so that the two are respectively located on opposite inner walls of the waveguide 1, for example, if the waveguide 1 has a rectangular shape, the first metal piece 211 and the second The metal pieces 212 are respectively disposed on the inner walls of the long sides of the rectangular cross section of the waveguide 1.
  • a first long groove 222 is provided on the inner wall of the waveguide 1, and the length direction of the first long groove 222 is disposed along the extending direction of the waveguide 1.
  • the first adjustment mechanism 22 includes a first adjustment rod 223 and a first fixing member 221, wherein the first adjustment rod 223 is disposed in the first long groove 222 and is movable along the length of the first long groove 222 And the first adjustment lever 223 is coupled to the finger connecting portion 201 of the first metal piece 211.
  • the first fixing member 221 is embedded in the first long groove 222 for defining the first adjusting rod 223 in the first long groove 222.
  • the first fixing member 221 is a strip-shaped plate embedded in the first long groove 222 along the extending direction of the waveguide 1, and the slit 2221 is disposed in the strip plate, and the slit 2221 is first The remaining space 2220 of the long groove 222 except the strip plate collectively forms a T-shaped groove, and the first adjustment rod 223 is located in the remaining space 2220 and is blocked by the first fixing member 221 and cannot be removed.
  • First One end of the finger connecting portion 201 of the metal piece 211 is connected to the first adjustment lever 223 through the slit 2221.
  • the finger connecting portion 201 of the first metal piece 211 extends into the first long groove 222 and conforms to the groove wall of the first long groove 222, which can be ensured in the first metal piece 211.
  • the finger connecting portion 201 of the first metal piece 211 does not sway and its position in the slit 2221 is not easily changed, thereby ensuring stability and accuracy of impedance adjustment.
  • the first adjustment mechanism 22 further includes a first driving portion (not shown) for driving the first adjustment lever 223 to move in the extending direction of the waveguide 1.
  • the first driving portion may be a motor for automatic control, or the first driving portion may also be a driving handle for manual control.
  • the above-mentioned spacing M is adjusted only by adjusting the position of the second metal piece 212 in the extending direction of the waveguide 1.
  • the capacitance adjusting mechanism includes a second adjusting mechanism 23, and the second adjusting mechanism 23 is disposed in the waveguide 1.
  • the inner wall is movable along the extending direction of the waveguide 1; the second adjusting mechanism 23 is coupled to the second metal piece 212 to drive the second metal piece 212 to move along the extending direction of the waveguide 1.
  • the second metal piece 212 is fixed to the inner wall of the waveguide 1.
  • the second metal piece 212 can be moved relative to the first metal piece 211 in the extending direction of the waveguide 1, so that the finger 200 of the first metal piece 211 and the adjacent thereto Adjustment of the spacing M between the fingers 200 of the second metal piece 212.
  • a second long groove is disposed on the inner wall of the waveguide 1, and the structure of the second long groove is the same as that of the first long groove 222, that is, the length direction of the second long groove is along the waveguide 1.
  • the second adjustment mechanism 23 includes a second adjustment lever 232 and a second fixing member 231, wherein the second adjustment lever 232 is disposed in the second long groove and is movable along the length direction of the second long groove, and The second adjustment lever 232 is coupled to the finger connecting portion 201 of the second metal piece 212.
  • the second fixing member 231 is embedded in the second long groove for defining the second adjusting rod 232 in the second long groove.
  • the second fixing member 231 is a strip plate embedded in the second long groove along the extending direction of the waveguide 1, and the slit plate 2221 is disposed in the strip plate, and the slit 2221 and the second length are The remaining space 2220 of the groove except the strip plate collectively forms a T-shaped groove, and the second adjustment rod 232 is located in the remaining space 2220 and is blocked by the second fixing member 231 and cannot be removed.
  • One end of the finger connecting portion 201 of the second metal piece 212 is connected to the second adjustment lever 232 through the slit 2221.
  • the finger connecting portion 201 of the second metal piece 212 extends into the second long groove and is in conformity with the groove wall of the second long groove, which ensures that the second metal piece 212 moves to After the corresponding position, the finger connecting portion 201 of the second metal piece 212 does not sway and its position in the slit 2221 is not easily changed, thereby ensuring stability and accuracy of impedance adjustment.
  • the second adjustment mechanism 23 further includes a second driving portion (not shown) for driving the second adjustment lever 232 to move in the extending direction of the waveguide 1.
  • the second driving portion may be a motor for automatic control, or the second driving portion may also be a driving handle for manual control.
  • the capacitance adjustment mechanism includes a first adjustment mechanism 22 and a second adjustment mechanism 23, which respectively drive the first metal piece 211 and the second metal piece 212 to move along the extending direction of the waveguide 1, thereby achieving the above-mentioned spacing M.
  • the adjustment of the position of the microstrip interdigital capacitance 21 in the direction of extension of the waveguide 1 is adjusted, and/or as a whole.
  • first fixing member 221, the second fixing member 231, the first adjusting rod 223 and the second adjusting rod 232 are both conductors to ensure normal transmission of microwaves through the waveguide 1, and the microstrip interdigital capacitor 21 achieves impedance matching. .
  • Embodiments of the present invention provide a semiconductor processing apparatus including a microwave source, a microwave transmission device, and a chamber for transmitting microwaves emitted by the microwave source to the chamber.
  • the microwave transmission device adopts the above microwave transmission device provided by the embodiment of the present invention.
  • the semiconductor processing apparatus provided by the embodiment of the invention can improve the absorption efficiency of the microwave in the plasma source by using the above-mentioned microwave transmission device provided by the embodiment of the invention, thereby achieving plasma stability and output beam intensity.

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Abstract

一种微波传输装置和半导体处理设备，其包括波导（1）和设置在波导（1）内的阻抗匹配结构（2），波导（1）用于将微波源发出的微波传输至负载；阻抗匹配结构（2）包括微带交指电容（21），通过调节微带交指电容（21）形成的等效电容和/或微带交指电容（21）在波导（1）的延伸方向上的位置，来实现阻抗匹配结构（2）的输入端之前的阻抗与阻抗匹配结构（2）的输入端之后的阻抗相匹配。所述阻抗匹配结构（2）的阻抗调节范围更大，从而可以扩大微波传输装置适用的工作频率范围和适用场景。

Description

一种微波传输装置和半导体处理设备 技术领域
本发明涉及半导体器件处理技术领域，具体地，涉及一种微波传输装置和半导体处理设备。
背景技术
传统的半导体制造工艺已经使用各种类型的等离子体加工设备，例如，电容耦合等离子体(CCP)类型，电感耦合等离子体(ICP)类型以及表面波或电子回旋共振等离子体(ECR)等类型。其中，表面波等离子体相对于ECR不需要增加磁场，同时相对于ICP有更高的密度和更低的电子温度，成为最先进的可应用于微电子加工的新型等离子体源之一。
表面波等离子体是利用沿表面传输的电磁波来维持放电的一类等离子体。目前，比较通用的表面波等离子体激发装置结构如图1所示，其包括微波源及微波传输结构、表面波天线结构和腔室三个部分。其中，微波源及微波传输结构包括微波源供电电源3、微波源(磁控管)4、谐振器5、环流器6、用于吸收反射功率的负载7、用于测量入射功率和反射功率的定向耦合器8、阻抗匹配结构2、波导1和馈电同轴探针10。腔室包括用于激发等离子体的谐振腔11、石英介质窗12、真空腔体13以及密封真空腔体13和谐振腔11的密封圈14。并且，在真空腔体13中设置有用于放置待处理晶片15的支撑台16。
在由微波源与负载组成的微波系统中，为了保证微波源的工作处于最佳状态，必须实现微波源与负载的阻抗匹配，否则会影响到微波在等离子体源中的吸收效率，从而影响到等离子体的稳定性和输出束流强度。在现有技术中，如图2和图3所示，阻抗匹配结构2包括设置在波导1中的金属销钉91 或金属膜片92，金属销钉91或金属膜片92能够在波导1中形成等效电容和等效电感，从而实现微波源与负载的阻抗匹配。但是，由于金属销钉或金属膜片作为阻抗匹配结构在波导1中形成等效电容和等效电感是一个固定值，其只能作为单一的固定电抗元件使用，因此，金属销钉或金属膜片只能应用在固定或有微小变化的负载阻抗匹配，难以适应负载变化情况下的阻抗匹配。
在现有技术中，如图4所示，阻抗匹配结构还可以采用可调节的螺钉结构，即，在波导1中设置有螺钉93，该螺钉93自波导1长边的中心位置，垂直于波导面插入波导1的内部，螺钉93进入波导1内部的部分形成等效电容和等效电感。通过调节螺钉93进入波导1内部的长度，可以调节该螺钉93在波导1中形成等效电容和等效电感的大小，从而实现微波源与负载的阻抗匹配。
但是，由于波导1的短边长度是固定的，这限制了螺钉93进入波导1内部的长度的可调节范围，从而上述阻抗匹配结构的阻抗调节范围较小，进而限制了微波传输装置适用的工作频率范围和适用场景。
发明内容
本发明针对现有技术中存在的上述技术问题，提供一种微波传输装置和半导体处理设备，其具有较大的工作频率范围和适用场景。
根据本发明的一方面，提供了一种微波传输装置，包括波导和设置在所述波导内的阻抗匹配结构，所述波导用于将微波源发出的微波传输至负载；
所述阻抗匹配结构包括微带交指电容，通过调节所述微带交指电容形成的等效电容和/或所述微带交指电容在所述波导的延伸方向上的位置，来实现所述阻抗匹配结构的输入端之前的阻抗与所述阻抗匹配结构的输入端之后的阻抗相匹配。
优选的，所述微带交指电容包括第一金属片和第二金属片，所述第一金 属片和第二金属片均包括手指和手指连接部，其中，
所述手指为多个，多个所述手指相互平行，且间隔设置；
所述手指连接部与每个所述手指的一端连接，且所述手指连接部与每个所述手指相互垂直，并且所有所述手指均位于所述手指连接部的同一侧；
所述第一金属片和所述第二金属片位于同一平面内，且所述第一金属片的所述手指和所述第二金属片的所述手指一一对应地交叉设置。
优选的，所述第一金属片和所述第二金属片各自的手指个数大于或等于3。
优选的，通过设定不同的所述第一金属片和所述第二金属片各自的手指个数,来调节所述微带交指电容形成的等效电容；和/或，
通过设定不同的所述第一金属片的所述手指和所述第二金属片的所述手指相互重叠的部分沿所述手指长度方向的长度，来调节所述微带交指电容形成的等效电容；和/或，
通过设定不同的所述第一金属片的所述手指和与之相邻的所述第二金属片的所述手指之间的间距,来调节所述微带交指电容形成的等效电容。
优选的，所述阻抗匹配结构还包括电容调节机构，用于实时调节所述第一金属片的所述手指和与之相邻的所述第二金属片的所述手指之间的水平间距；和/或，调节所述第一金属片和/或所述第二金属片在所述波导的延伸方向上的位置。
优选的，所述电容调节机构包括第一调节机构，所述第一调节机构设置在所述波导的内壁上，且可沿所述波导的延伸方向移动；
所述第一调节机构与所述第一金属片连接；
所述第二金属片固定在所述波导的内壁上。
优选的，所述电容调节机构包括第二调节机构，所述第二调节机构设置在所述波导的内壁上，且可沿所述波导的延伸方向移动；
所述第二调节机构与所述第二金属片连接；
所述第二金属片固定在所述波导的内壁上。
优选的，所述电容调节机构包括第一调节机构和第二调节机构，其中，
所述第一调节机构设置在所述波导的内壁上，且可沿所述波导的延伸方向移动；所述第一调节机构与所述第一金属片连接；
所述第二调节机构设置在所述波导的内壁上，且可沿所述波导的延伸方向移动；所述第二调节机构与所述第二金属片连接。
优选的，在所述波导的内壁上设置有第一长凹槽，所述第一长凹槽的长度方向沿所述波导的延伸方向设置；
所述第一调节机构包括：
第一调节杆，其设置在所述第一长凹槽内，且可沿所述第一长凹槽的长度方向移动，并且所述第一调节杆与所述第一金属片的所述手指连接部连接；
第一固定件，其内嵌在所述第一长凹槽内，用以将所述第一调节杆限定在所述第一长凹槽内。
优选的，所述第一金属片的所述手指连接部的至少一部分延伸至所述第一长凹槽内，且与所述第一长凹槽的槽壁相贴合。
优选的，在所述波导的内壁上设置有第二长凹槽，所述第二长凹槽的长度方向沿所述波导的延伸方向设置；
所述第二调节机构包括：
第二调节杆，其设置在所述第二长凹槽内，且可沿所述第二长凹槽的长度方向移动，并且所述第二调节杆与所述第二金属片的所述手指连接部连接；
第二固定件，其内嵌在所述第二长凹槽内，用以将所述第二调节杆限定在所述第二长凹槽内。
优选的，所述第二金属片的所述手指连接部的至少一部分延伸至所述第二长凹槽内，且与所述第二长凹槽的槽壁相贴合。
优选的，所述第一调节机构还包括第一驱动部，
所述第一驱动部用于驱动所述第一调节杆沿所述波导的延伸方向移动。
优选的，所述第二调节机构还包括第二驱动部，
所述第二驱动部用于驱动所述第二调节杆沿所述波导的延伸方向移动。
优选的，所述第一驱动部包括电机或驱动手柄。
优选的，所述第二驱动部包括电机或驱动手柄。
优选的，所述第一调节杆和所述第一固定件均为导体。
优选的，所述第二调节杆和所述第二固定件均为导体。
作为另一个技术方案，本发明还提供一种半导体处理设备，包括微波源、微波传输装置和腔室，所述微波传输装置用于将由所述微波源发出的微波传输至所述腔室，所述微波传输装置采用本发明提供的上述微波传输装置。
本发明的有益效果：
本发明提供的微波传输装置，其阻抗匹配结构采用微带交指电容，通过调节该微带交指电容形成的等效电容和/或微带交指电容在波导的延伸方向上的位置，来实现阻抗匹配结构的输入端之前的阻抗与阻抗匹配结构的输入端之后的阻抗相匹配。由于微带交指电容的调节范围不会受到波导结构和尺寸的限制，这与现有技术相比，可以增大阻抗匹配结构的阻抗调节范围，从而可以扩大微波传输装置适用的工作频率范围和适用场景。
本发明提供的半导体处理设备，其通过采用本发明提供的上述微波传输装置，可以提高微波在等离子体源中的吸收效率，从而可以等离子体的稳定性和输出束流强度。
附图说明
图1为现有技术中表面波等离子体激发装置的结构示意图；
图2为现有技术中阻抗匹配结构采用金属销钉的结构示意图；
图3为现有技术中阻抗匹配结构采用金属膜片的结构示意图；
图4为现有技术中阻抗匹配结构采用可调节长度的螺钉的结构示意图；
图5为本发明一种实施方式的微波传输装置的垂直于波导延伸方向的截面图；
图6为本发明一种实施方式的微波传输装置的平行于波导延伸方向的截面图；
图7为本发明一种实施方式的微带交指电容的结构图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明提供的微波传输装置和半导体处理设备作进一步详细描述。
实施例1：
本实施例提供一种微波传输装置，如图5和图6所示，包括波导1和设置在波导1内的阻抗匹配结构2，其中，波导1用于将由微波源发出的微波传输至负载。这里，负载一般为腔室，该腔室包括：用于激发等离子体的谐振腔、石英介质窗、真空腔体、密封真空腔体和谐振腔的密封圈、以及设置在真空腔体中的用于放置待处理晶片的支撑台，具体结构参见图1。
阻抗匹配结构2能够实现其输入端之前(微波源一侧)所有部件产生的阻抗，与其输入端之后(负载一侧)所有部件产生的阻抗(其中包括了阻抗匹配结构本身)的匹配。上述阻抗匹配结构2的输入端即为在微波的传输方向上，阻抗匹配结构2的上游一端。其中，阻抗匹配结构2包括微带交指电容21，通过调节该微带交指电容21形成的等效电容和/或微带交指电容21在波导的延伸方向(即，微波的传输方向)上的位置，来实现阻抗匹配结构2的输入端之前的阻抗与阻抗匹配结构2的输入端之后的阻抗相匹配。由于 微带交指电容21的调节范围不会受到波导结构和尺寸的限制，这与现有技术相比，可以增大阻抗匹配结构的阻抗调节范围，从而可以扩大微波传输装置适用的工作频率范围和适用场景。
根据本发明的一种实施方式，如图7所示，微带交指电容21包括第一金属片211和第二金属片212，二者均包括：手指200和手指连接部201，其中，手指200为多个，多个手指200间隔设置，且相互平行，手指连接部201与每个手指200的一端连接，且手指连接部201与每个手指200相互垂直，并且所有手指200均位于手指连接部201的同一侧。第一金属片211和第二金属片212位于同一平面内，并且第一金属片211的手指200和第二金属片212的手指200的朝向相反，且一一对应地交叉设置，即，每相邻的两个第一金属片211的手指200之间设置有一个第二金属片212的手指200，且第一金属片211的手指200与第二金属片212的手指200在手指200的长度方向上至少一部分相互重叠。
以图7示出的微带交指电容为例，对在本申请中微带交指电容形成等效电容的原理进行说明。
如图7所示，在微带交指电容21的结构中，手指连接部201的宽度为W，手指200的宽度为S，第一金属片211的手指200和第二金属片212的手指200相互重叠的部分沿手指长度方向的长度为L，第一金属片211的手指200和与之相邻的第二金属片212的手指200之间的间距为M。
当在波导1中通入微波时，微波在第一金属片211和第二金属片212的界面上激发高次模，由微波产生的电场集中在一金属片211和第二金属片212的界面，从而在相邻的两个手指200的朝向彼此的边缘处形成等效电容，而且在相邻的两个手指200的朝向彼此的边缘面形成了面积很小的平行金属板电容器，从而多个相邻的两个手指200可视为若干个并联的小平行板电容，等效为接在波导1内的一个电容器。同时，第一金属片211和第二金属片212 的手指200等效为波导1内并联的电感。由此，微带交指电容21的整体结构形成电感与电容的串联谐振回路。
通过调节微带交指电容21的等效电容来调节阻抗的原理为：由于位于波导1的内壁上的第一金属片211和第二金属片212可以使波导1传输微波的结构产生不连续性，这使得在波导1中传输的单模电波的边界条件无法满足切向电场为零的条件，从而为了抵消这些切向电场分量，在第一金属片211和第二金属片212的边缘必然会激发出高次模。这些高次模电波对于选定的传输单模电波的波导1来说为截止波，不能沿波导1传输，只能集中在金属片附近，相当于一个储能的电容器。而由于微带交指电容21自身的材质与形状决定了其本身具有电阻和分布电感，因此，从而通过调节微带交指电容21的等效电容可以实现调节阻抗。
可选的，第一金属片211与第二金属片212各自的手指个数大于或等于3，优选为4个。当手指个数大于或等于3时，微带交指电容21形成的总电容可以看成是一个三指电容C3、n-3个周期电容Cn和交指终端电容Cend的总和，即，微带交指电容21的总电容C＝C3+(n-3)Cn+Cend。其中，以第一金属片211的手指200为4个，第二金属片212的手指200为3个为例，如图7所示，将所有的手指200(共7个)按照图7由左向右的方向排序，三指电容C3由自左侧起第一个手指、第二个手指和第三个手指形成；n-3个周期电容Cn由自左侧起第四个手指和第五个手指形成；Cend由自左侧起第六个手指和第七个手指形成。
根据总电容的上述计算方式可知，通过改变自身结构和/或尺寸，可以使微带交指电容21形成不同大小的等效电容，即实现微带交指电容21的等效电容可调，而且根据不同的结构和/或尺寸的改变，微带交指电容21的等效电容的调节范围也不同。由此可知，微带交指电容21的调节范围不会受到波导结构和尺寸的限制，从而与现有技术相比，阻抗匹配结构的阻抗调节范围 更大，进而可以扩大微波传输装置适用的工作频率范围和适用场景。
可选的，通过设定不同的第一金属片211和第二金属片212各自的手指200个数,可以调节上述总电容，从而可以调节微带交指电容21形成的等效电容；和/或，通过设定不同的第一金属片211的手指200和第二金属片212的手指200相互重叠的部分沿手指长度方向的长度L，可以调节上述三指电容C3、n-3个周期电容Cn或者交指终端电容Cend，从而可以调节微带交指电容21形成的等效电容；和/或，通过设定不同的第一金属片211的手指200和与之相邻的第二金属片212的手指200之间的间距M,可以调节上述三指电容C3、n-3个周期电容Cn或者交指终端电容Cend，从而可以调节微带交指电容21形成的等效电容。容易理解，当微带交指电容21的结构和/或尺寸设定完成之后，微带交指电容21形成的等效电容值是固定的，不会实时变化。
由上可知，通过改变微带交指电容21自身结构和/或尺寸，可以实现微带交指电容21的等效电容可调。这种方式的调节幅度较小，满足仅进行微调就可以实现阻抗匹配的要求。而对于负载阻抗变化范围较大的情况，可以通过调节微带交指电容21在波导1的延伸方向上的位置，来实现阻抗匹配。进一步说，通过调节微带交指电容21在波导1的延伸方向上的位置，可以改变波导1在阻抗匹配结构2的输入端之前的部分的长度，同时改变波导1在阻抗匹配结构2的输入端之后的部分的长度，即改变了阻抗匹配结构2的输入端前后的阻抗大小，最终达到使二者相匹配的目的。这种方式可以对抗匹配结构2的输入端前后的阻抗进行较大幅度的调整，从而可以满足负载阻抗变化范围较大时的要求。另外，采用这种方式可以使阻抗匹配结构2的阻抗调节范围更大，从而可以进一步扩大微波传输装置适用的工作频率范围和适用场景。在实际应用中，上述两种调节阻抗的方式可以根据具体情况选择至少一种进行。
优选的，阻抗匹配结构2还包括电容调节机构，用于实时调节第一金属 片211的手指200和与之相邻的第二金属片212的手指200之间的间距M；和/或第一金属片211和/或第二金属片212在波导1的延伸方向上的位置。
下面对电容调节结构的具体结构进行详细描述。具体地，针对电容调节结构仅通过调节第一金属片211在波导1的延伸方向上的位置，来调节上述间距M的情况，电容调节机构包括第一调节机构22，该第一调节机构22设置在波导1的内壁上，且可沿波导1的延伸方向(即，波导传输微波的方向)移动。并且，第一调节机构22与第一金属片211连接，以带动该第一金属片211沿波导1的延伸方向移动。第二金属片212固定在波导1的内壁上。由此，在第一调节机构22的驱动下，第一金属片211能够相对于第二金属片212沿波导1的延伸方向移动，从而对第一金属片211的手指200和与之相邻的第二金属片212的手指200之间的间距M的调节。
容易理解，第一金属片211和第二金属片212彼此相对设置，因此二者分别位于波导1相对的两侧内壁上，例如，若波导1呈矩形管状，则第一金属片211和第二金属片212分别设置在波导1的矩形截面相对的两个长边所在的内壁上。
进一步地，在波导1的内壁上设置有第一长凹槽222，该第一长凹槽222的长度方向沿波导1的延伸方向设置。并且，第一调节机构22包括第一调节杆223和第一固定件221，其中，第一调节杆223设置在第一长凹槽222内，且可沿第一长凹槽222的长度方向移动，并且第一调节杆223与第一金属片211的手指连接部201连接。第一固定件221内嵌在第一长凹槽222内，用以将第一调节杆223限定在第一长凹槽222内。
在本实施例中，第一固定件221为条形板，其沿波导1的延伸方向嵌入第一长凹槽222中，且在该条形板中设置有缝隙2221，该缝隙2221与第一长凹槽222中除条形板之外的剩余空间2220共同形成一T型凹槽，第一调节杆223位于该剩余空间2220内，且被第一固定件221阻挡而无法移出。第 一金属片211的手指连接部201的一端通过缝隙2221与第一调节杆223连接。
优选的，第一金属片211的手指连接部201的至少一部分延伸至第一长凹槽222内，且与第一长凹槽222的槽壁相贴合，这可以确保在第一金属片211移动至相应的位置之后，第一金属片211的手指连接部201不会发生晃动且其在缝隙2221内的部分的位置也不容易发生改变，从而保证了阻抗调节的稳定性和准确性。
进一步优选的，第一调节机构22还包括第一驱动部(图中未示出)，该第一驱动部用于驱动第一调节杆223沿波导1的延伸方向移动。第一驱动部可以为电机，以实现自动控制，或者，第一驱动部也可以为驱动手柄，以进行手动控制。
针对电容调节结构仅通过调节第二金属片212在波导1的延伸方向上的位置，来调节上述间距M的情况，电容调节机构包括第二调节机构23，该第二调节机构23设置在波导1的内壁上，且可沿波导1的延伸方向移动；第二调节机构23与第二金属片212连接，以带动该第二金属片212沿波导1的延伸方向移动。第二金属片212固定在波导1的内壁上。由此，在第二调节机构23的驱动下，第二金属片212能够相对于第一金属片211沿波导1的延伸方向移动，从而对第一金属片211的手指200和与之相邻的第二金属片212的手指200之间的间距M的调节。
进一步地，在波导1的内壁上设置有第二长凹槽，该第二长凹槽的结构与上述第一长凹槽222的结构相同，即，第二长凹槽的长度方向沿波导1的延伸方向设置。并且，第二调节机构23包括第二调节杆232和第二固定件231，其中，第二调节杆232设置在第二长凹槽内，且可沿第二长凹槽的长度方向移动，并且第二调节杆232与第二金属片212的手指连接部201连接。第二固定件231内嵌在第二长凹槽内，用以将第二调节杆232限定在第二长凹槽内。
在本实施例中，第二固定件231为条形板，其沿波导1的延伸方向嵌入第二长凹槽中，且在该条形板中设置有缝隙2221，该缝隙2221与第二长凹槽中除条形板之外的剩余空间2220共同形成一T型凹槽，第二调节杆232位于该剩余空间2220内，且被第二固定件231阻挡而无法移出。第二金属片212的手指连接部201的一端通过缝隙2221与第二调节杆232连接。
优选的，第二金属片212的手指连接部201的至少一部分延伸至第二长凹槽内，且与第二长凹槽的槽壁相贴合，这可以确保在第二金属片212移动至相应的位置之后，第二金属片212的手指连接部201不会发生晃动且其在缝隙2221内的部分的位置也不容易发生改变，从而保证了阻抗调节的稳定性和准确性。
进一步优选的，第二调节机构23还包括第二驱动部(图中未示出)，该第二驱动部用于驱动第二调节杆232沿波导1的延伸方向移动。第二驱动部可以为电机，以实现自动控制，或者，第二驱动部也可以为驱动手柄，以进行手动控制。
针对电容调节结构通过分别调节第一金属片211在波导1的延伸方向上的位置和第二金属片212在波导1的延伸方向上的位置，来调节上述间距M的情况，和/或，通过同时调节第一金属片211在波导1的延伸方向上的位置和第二金属片212在波导1的延伸方向上的位置，以在整体上调节微带交指电容21在波导1的延伸方向上的位置。具体地，电容调节机构包括第一调节机构22和第二调节机构23，二者分别带动该第一金属片211和第二金属片212沿波导1的延伸方向移动，从而实现对上述间距M的调节，和/或在整体上对调节微带交指电容21在波导1的延伸方向上的位置的调节。
进一步优选的，第一固定件221、第二固定件231、第一调节杆223和第二调节杆232均为导体，以确保微波通过波导1正常传输，以及微带交指电容21实现阻抗匹配。
实施例2：
本发明实施例提供一种半导体处理设备，其包括微波源、微波传输装置和腔室，微波传输装置用于将由微波源发出的微波传输至腔室。其中，微波传输装置采用了本发明实施例提供的上述微波传输装置。
本发明实施例提供的半导体处理设备，其通过采用本发明实施例提供的上述微波传输装置，可以提高微波在等离子体源中的吸收效率，从而可以等离子体的稳定性和输出束流强度。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (19)

  1. 一种微波传输装置，包括波导和设置在所述波导内的阻抗匹配结构，所述波导用于将微波源发出的微波传输至负载；其特征在于，
    所述阻抗匹配结构包括微带交指电容，通过调节所述微带交指电容形成的等效电容和/或所述微带交指电容在所述波导的延伸方向上的位置，来实现所述阻抗匹配结构的输入端之前的阻抗与所述阻抗匹配结构的输入端之后的阻抗相匹配。
  2. 根据权利要求1所述的微波传输装置，其特征在于，所述微带交指电容包括第一金属片和第二金属片，所述第一金属片和第二金属片均包括手指和手指连接部，其中，
    所述手指为多个，多个所述手指相互平行，且间隔设置；
    所述手指连接部与每个所述手指的一端连接，且所述手指连接部与每个所述手指相互垂直，并且所有所述手指均位于所述手指连接部的同一侧；
    所述第一金属片和所述第二金属片位于同一平面内，且所述第一金属片的所述手指和所述第二金属片的所述手指一一对应地交叉设置。
  3. 根据权利要求2所述的微波传输装置，其特征在于，所述第一金属片和所述第二金属片各自的手指个数大于或等于3。
  4. 根据权利要求2所述的微波传输装置，其特征在于，通过设定不同的所述第一金属片和所述第二金属片各自的手指个数,来调节所述微带交指电容形成的等效电容；和/或，
    通过设定不同的所述第一金属片的所述手指和所述第二金属片的所述手指相互重叠的部分沿所述手指长度方向的长度，来调节所述微带交指电容形成的等效电容；和/或，
    通过设定不同的所述第一金属片的所述手指和与之相邻的所述第二金属片的所述手指之间的间距,来调节所述微带交指电容形成的等效电容。
  5. 根据权利要求2-4任意一项所述的微波传输装置，其特征在于，所述阻抗匹配结构还包括电容调节机构，用于实时调节所述第一金属片的所述手指和与之相邻的所述第二金属片的所述手指之间的水平间距；和/或，调节所述第一金属片和/或所述第二金属片在所述波导的延伸方向上的位置。
  6. 根据权利要求5所述的微波传输装置，其特征在于，所述电容调节机构包括第一调节机构，所述第一调节机构设置在所述波导的内壁上，且可沿所述波导的延伸方向移动；
    所述第一调节机构与所述第一金属片连接；
    所述第二金属片固定在所述波导的内壁上。
  7. 根据权利要求5所述的微波传输装置，其特征在于，所述电容调节机构包括第二调节机构，所述第二调节机构设置在所述波导的内壁上，且可沿所述波导的延伸方向移动；
    所述第二调节机构与所述第二金属片连接；
    所述第二金属片固定在所述波导的内壁上。
  8. 根据权利要求5所述的微波传输装置，其特征在于，所述电容调节机构包括第一调节机构和第二调节机构，其中，
    所述第一调节机构设置在所述波导的内壁上，且可沿所述波导的延伸方向移动；所述第一调节机构与所述第一金属片连接；
    所述第二调节机构设置在所述波导的内壁上，且可沿所述波导的延伸方向移动；所述第二调节机构与所述第二金属片连接。
  9. 根据权利要求6或8所述的微波传输装置，其特征在于，在所述波导的内壁上设置有第一长凹槽，所述第一长凹槽的长度方向沿所述波导的延伸方向设置；
    所述第一调节机构包括：
    第一调节杆，其设置在所述第一长凹槽内，且可沿所述第一长凹槽的长度方向移动，并且所述第一调节杆与所述第一金属片的所述手指连接部连接；
    第一固定件，其内嵌在所述第一长凹槽内，用以将所述第一调节杆限定在所述第一长凹槽内。
  10. 根据权利要求9所述的微波传输装置，其特征在于，所述第一金属片的所述手指连接部的至少一部分延伸至所述第一长凹槽内，且与所述第一长凹槽的槽壁相贴合。
  11. 根据权利要求7或8所述的微波传输装置，其特征在于，在所述波导的内壁上设置有第二长凹槽，所述第二长凹槽的长度方向沿所述波导的延伸方向设置；
    所述第二调节机构包括：
    第二调节杆，其设置在所述第二长凹槽内，且可沿所述第二长凹槽的长度方向移动，并且所述第二调节杆与所述第二金属片的所述手指连接部连接；
    第二固定件，其内嵌在所述第二长凹槽内，用以将所述第二调节杆限定在所述第二长凹槽内。
  12. 根据权利要求9所述的微波传输装置，其特征在于，所述第二金属片的所述手指连接部的至少一部分延伸至所述第二长凹槽内，且与所述第二长凹槽的槽壁相贴合。
  13. 根据权利要求6或8所述的微波传输装置，其特征在于，所述第一调节机构还包括第一驱动部，
    所述第一驱动部用于驱动所述第一调节杆沿所述波导的延伸方向移动。
  14. 根据权利要求7或8所述的微波传输装置，其特征在于，所述第二调节机构还包括第二驱动部，
    所述第二驱动部用于驱动所述第二调节杆沿所述波导的延伸方向移动。
  15. 根据权利要求12所述的微波传输装置，其特征在于，所述第一驱动部包括电机或驱动手柄。
  16. 根据权利要求13所述的微波传输装置，其特征在于，所述第二驱动部包括电机或驱动手柄。
  17. 根据权利要求9所述的微波传输装置，其特征在于，所述第一调节杆和所述第一固定件均为导体。
  18. 根据权利要求11所述的微波传输装置，其特征在于，所述第二调节杆和所述第二固定件均为导体。
  19. 一种半导体处理设备，包括微波源、微波传输装置和腔室，所述微波传输装置用于将由所述微波源发出的微波传输至所述腔室，其特征在于，所述微波传输装置采用权利要求1-18任一项所述的微波传输装置。
PCT/CN2017/088979 2016-11-15 2017-06-19 一种微波传输装置和半导体处理设备 Ceased WO2018090618A1 (zh)

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US10937633B2 (en) 2021-03-02

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