WO2018090366A1 - 指纹传感器及电子终端 - Google Patents

指纹传感器及电子终端 Download PDF

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Publication number
WO2018090366A1
WO2018090366A1 PCT/CN2016/106588 CN2016106588W WO2018090366A1 WO 2018090366 A1 WO2018090366 A1 WO 2018090366A1 CN 2016106588 W CN2016106588 W CN 2016106588W WO 2018090366 A1 WO2018090366 A1 WO 2018090366A1
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WO
WIPO (PCT)
Prior art keywords
sensor
switch
power supply
fingerprint
circuit
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Application number
PCT/CN2016/106588
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English (en)
French (fr)
Inventor
杜灿鸿
Original Assignee
深圳市汇顶科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市汇顶科技股份有限公司 filed Critical 深圳市汇顶科技股份有限公司
Priority to EP16921516.7A priority Critical patent/EP3418942B1/en
Priority to CN201680001432.1A priority patent/CN106796658A/zh
Priority to PCT/CN2016/106588 priority patent/WO2018090366A1/zh
Publication of WO2018090366A1 publication Critical patent/WO2018090366A1/zh
Priority to US16/139,025 priority patent/US10872217B2/en

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2218/00—Aspects of pattern recognition specially adapted for signal processing
    • G06F2218/02—Preprocessing
    • G06F2218/04—Denoising

Definitions

  • Embodiments of the present invention relate to the field of biometric identification, and in particular, to a fingerprint sensor and an electronic terminal.
  • fingerprints are life-changing, unique, and convenient, they provide a higher level of identity security certification.
  • the fingerprint sensor is usually used as a device for automatic fingerprint acquisition.
  • Fingerprint sensors are classified into optical fingerprint sensors, semiconductor capacitive sensors, semiconductor thermal sensors, semiconductor pressure sensors, ultrasonic sensors, and RF RF sensors.
  • a finger is attached to the other plate on which the capacitor is formed. Since the plane of the finger is uneven, the corresponding ridge at the bump, the valley corresponding to the pit, the actual distance of the contact plate at the bump and the pit are different, and the capacitors with different capacitance values are formed, and the device will collect different according to this principle.
  • the capacitance values are summarized to complete the fingerprint collection.
  • An object of the present invention is to provide a fingerprint sensor and an electronic terminal for solving at least the above problems in the prior art.
  • an embodiment of the present invention provides a fingerprint sensor, including: a fingerprint sensing chip and a floating control circuit, the fingerprint sensing chip includes a sensor array and a driver having a plurality of sensing electrodes; The sensing electrode of the sensor array is configured to form a fingerprint capacitance with the finger; the driver is configured to output a driving signal to the floating control circuit; the fingerprint The sensing chip has a sensor power supply end and a sensor ground, and the sensor power supply end and the sensor ground are connected to the floating control circuit for receiving a high potential and a low potential output by the floating control circuit, respectively; the floating control The circuit includes a switching circuit for controlling a switching on/off state of the switching circuit according to the driving signal such that a high potential and a low potential of the output are variable with respect to a device reference potential, and the floating The high potential and the low potential output by the ground control circuit are substantially synchronously changed to maintain a substantially constant supply voltage and supplied to the fingerprint sensing chip.
  • An embodiment of the present invention further provides an electronic terminal, including the fingerprint sensor described in any one of the embodiments.
  • the fingerprint sensing chip includes a sensor array and a driver having a plurality of sensing electrodes through a fingerprint sensing chip and a floating control circuit; and the sensing electrodes of the sensor array are used to form a fingerprint capacitance with the finger;
  • the driver is configured to output a driving signal to the floating control circuit;
  • the fingerprint sensing chip has a sensor power supply end and a sensor ground, and the sensor power supply end and the sensor ground are connected to the floating control circuit for receiving a high potential and a low potential output by the floating control circuit; a high potential and a low potential output by the floating control circuit are variable with respect to a device reference potential, and a high potential and a low potential output by the floating control circuit
  • the basic synchronous change maintains a substantially constant supply voltage and is supplied to the fingerprint sensing chip, which ultimately increases the amplitude of the driving signal and improves the signal-to-noise ratio of the fingerprint image, thereby overcoming the prior art due to the existence of the cover plate.
  • FIG. 1 is a schematic structural diagram of a fingerprint sensor according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic structural diagram of a fingerprint sensor according to Embodiment 2 of the present invention.
  • FIG. 3 is a schematic structural diagram of a fingerprint sensor according to Embodiment 3 of the present invention.
  • FIG. 4 is a schematic structural diagram of a fingerprint sensor according to Embodiment 4 of the present invention.
  • FIG. 5 is a schematic structural diagram of a fingerprint sensor according to Embodiment 5 of the present invention.
  • FIG. 6 is a schematic diagram showing changes in level of a driving signal TX, a sensor ground SGND, and a power supply input terminal SVDD according to the above embodiment of the present invention
  • FIG. 1 is a schematic structural diagram of a fingerprint sensor according to Embodiment 1 of the present invention; as shown in FIG. 1, a fingerprint sensing chip 100 and a floating ground control circuit 180 are included; the fingerprint sensing chip 100 includes a plurality of sensing electrodes Sensor array 101 and driver 103.
  • the sensing electrode of the sensor array 101 is used to form a fingerprint capacitance Cf with a finger.
  • the driver 103 is connected to the floating control circuit 180 for outputting a driving signal (or called an excitation signal) TX to the floating control circuit 180.
  • the fingerprint sensing chip 100 further has a sensor power supply end (Sensor VDD, SVDD for short) and a sensor ground (SGND), which are connected to the floating control circuit 180 for receiving the floating
  • the ground control circuit 180 outputs a high potential and a low potential.
  • the high potential and low potential output by the floating control circuit 180 are variable with respect to the device reference potential GND (ie, device ground), and the two are substantially synchronously changed to maintain a substantially constant supply voltage and provide the fingerprint sensing.
  • Chip 100 is variable with respect to the device reference potential GND (ie, device ground), and the two are substantially synchronously changed to maintain a substantially constant supply voltage and provide the fingerprint sensing.
  • the so-called low potential and high potential in the present application are relatively speaking, that is, the low potential of the sensor SGND simply means that its high potential received relative to the sensor supply terminal SVDD is low.
  • the level of the low potential may also be a high voltage signal including, for example, 12V in actual product implementation.
  • the floating control circuit 180 mainly includes a storage capacitor 102, a switch circuit 104, and a boost circuit 105.
  • the driving signal TX received by the floating control circuit 180 from the driver 103 is used to control the switching on/off state of the switching circuit 104 such that the low potential of the SGND provided to the sensor is relative to the device ground GND. It is a change, that is, the level of the sensor SGND is floating.
  • the boosting circuit 105 is connected to a power supply for boosting a power supply voltage (such as a 3V power supply voltage) output by the power supply and generating a high voltage signal (such as a 12V high voltage).
  • the switch circuit 104 is connected between the power supply and the sensor supply terminal SVDD on the one hand, and is also connected between the boost circuit 105 and the sensor ground SGND on the other hand.
  • the switch circuit 104 periodically outputs a power supply voltage outputted by the power supply source to the sensor power supply terminal SVDD through a switch on/off state switching; and also switches the booster circuit through its internal switch on/off state switching
  • the high voltage signal outputted by 105 is periodically supplied to the SGND of the sensor, thereby realizing the SGND of the sensor of the high voltage floating (HV Floating).
  • the storage capacitor 102 is connected Between the sensor supply terminal SVDD and the sensor ground SGND, it is mainly used to maintain a state in which a high potential supplied to the power supply input terminal SVDD and a low potential of the sensor ground SGND are substantially synchronously changed, thereby
  • the fingerprint sensing chip 100 provides the substantially constant supply voltage.
  • the switch circuit 104 includes a plurality of switches, and the driving signal TX may generate a plurality of control signals through a conversion process, and respectively control an on-off state of the plurality of switches, so that the sensor is provided with SGND.
  • the low potential varies substantially synchronously with the high potential supplied to the sensor supply terminal SVDD.
  • the switch circuit 104 can include three switches, which are a first switch 114, a second switch 124, and a third switch 134, respectively.
  • the first switch 114 is disposed between the power supply and the sensor power supply terminal SVDD.
  • the second switch 124 is disposed between the boosting circuit 105 and the sensor ground SGND.
  • the third switch 134 is disposed between the device ground GND and the sensor ground SGND.
  • the driving signal TX may generate a first control signal, a second control signal, and a third control signal by a conversion process, and respectively control an on/off state of the first switch 114, the second switch 124, and the third switch 134;
  • the first control signal and the third control signal may control synchronization of the first switch 114 and the third switch 134, and the second control signal may control the communication of the second switch 124.
  • the off state is opposite to the third switch 134 such that the low potential supplied to the sensor SGND is varied with respect to the device ground GND, and the high potential supplied to the sensor supply SVDD and the low potential is Basically synchronized changes.
  • the second switch 124 is turned off, and the sensor power supply terminal SVDD is connected to the power supply and receives the power supply.
  • a supply voltage (such as 3V) is provided, and the sensor ground SGND is connected to the device ground GND, so the sensor ground SGND is pulled down to the device ground GND, the high potential of the sensor power supply terminal SVDD and the sensor ground SGND
  • a supply voltage ie, 3V
  • the sensor ground SGND is connected to the boosting circuit and receives a high voltage signal output by the boosting circuit.
  • a high voltage signal output by the boosting circuit For example, 12V
  • the low potential of the sensor ground SGND jumps from the device ground GND to the high voltage signal
  • the sensor power supply end The high potential of SVDD will be pulled up to the sum of the supply voltage and the high voltage signal (such as 15V), thereby causing the high potential of the sensor supply terminal SVDD and the The supply voltage (ie, 3V) that is substantially consistent with the supply voltage is maintained between the low potentials of the sensor ground SGND.
  • the fingerprint sensor in this embodiment includes a fingerprint sensing chip 100 and a floating control circuit 180.
  • the fingerprint sensing chip 100 has a sensor power supply terminal SVDD and a sensor ground SGND, and includes an inductive array (not shown), a driver 103 and a driving signal source 106, wherein the driving signal source generates a driving signal TX and passes the The driver 103 is output to the floating control circuit 180.
  • the floating control circuit 180 includes a switching circuit 104, a boosting circuit 105, a timing driving module 107, a bootstrap driving circuit 108, and a storage capacitor 102.
  • the boosting circuit 105 can be a switching DC boost circuit, such as a Boost circuit, including an inductor 115, a switch transistor 125, a diode 135, a filter capacitor 145, and a PWM controller 155.
  • the PWM controller 155 is configured to generate a pulse width modulation signal and output it to the switching transistor 125 to control the switching state of the switching transistor 125.
  • the switch transistor 125 can be a MOS transistor having a gate connected to the PWM controller 125 and a source connected to the device ground GND; the drain of the switch transistor 125 is connected to the power supply via the inductor 115 on the one hand.
  • the power source and on the other hand, is connected to the anode of the diode 135.
  • the negative electrode of the diode 135 serves as an output terminal of the boosting circuit 105 and is connected to the switching circuit 104, and is connected to the device ground GND through the filter capacitor 145.
  • the power supply may provide a power supply voltage, such as the 3V power supply voltage shown in FIG. 2, and the boosting circuit 105 may convert the 3V power supply voltage into a 12V high voltage signal by a boosting process.
  • the timing driving module 107 is connected between the driver 103 and the switch circuit 104, and is configured to receive the driving signal TX and perform conversion processing on the driving signal TX to generate a plurality of control signals. And controlling an on/off state of the plurality of switches of the switch circuit 104 according to the plurality of control signals. Specifically, the timing driving module 107 may generate a timing conversion process by using the driving signal TX output by the driver 103, thereby generating three control signals. That is, the first control signal, the second control signal, and the third control signal.
  • the switch circuit 104 includes a first switch 114, a second switch 124, and a third switch 134, wherein the first switch 114, the second switch 124, and the third switch 134 can all be transistor switches. Such as high speed transistor switches.
  • the timing driving module 107 may convert the driving signal TX into the first control signal, the second control signal, and the third control signal by a timing conversion process, and output through different control ports respectively to control The on/off state of the first switch 114, the second switch 124, and the third switch 134.
  • the first control signal and the third control signal may control synchronization of the first switch 114 and the third switch 134, and the second control signal controls the second switch 124.
  • the on-off state is opposite to the first switch 114, as described in the above embodiment, thereby causing the low potential of the SGND provided to the sensor to be varied with respect to the device ground GND, and cooperating with the storage capacitor 102
  • the high potential supplied to the sensor supply terminal SVDD and the low potential of the sensor ground SGND are substantially synchronously varied to maintain a substantially constant supply voltage between the sensor supply terminal SVDD and the sensor ground SGND.
  • the fingerprint sensing chip 100 is powered.
  • the first switch 114, the second switch 124, and the third switch 134 are all NMOS transistors.
  • the three are referred to as a first NMOS transistor 114 and a second NMOS transistor, respectively.
  • 124 and a third NMOS transistor 134 are NMOS transistors.
  • the bootstrap driving circuit 108 is connected to the gate of the first NMOS transistor 114 for receiving the first control signal output by the timing driving module 107, and driving the first NMOS according to the first control signal Transistor 114 thus controls its on-off state.
  • a source of the first NMOS transistor 114 is connected to the power supply, and receives a supply voltage (3V) provided by the power supply;
  • a drain of the first NMOS transistor 114 is connected to the fingerprint sensor chip 100.
  • Sensor supply terminal SVDD Sensor supply terminal SVDD.
  • the bootstrap driving circuit 108 includes a diode 118, a second storage capacitor 128, and an amplifier 138.
  • the diode 118 is disposed between a source and a gate of the first NMOS transistor, and the second storage One end of the energy storage capacitor 128 is connected to the gate of the first NMOS transistor, and the other end of the second storage capacitor 128 is connected to the output end of the amplifier 138, and the input end of the amplifier 138 is in a low state state.
  • the first control signal is connected to perform a conversion process on the first control signal in a low level state to form a first control signal in a high level state.
  • a gate of the second NMOS transistor 124 is connected to the timing driving module 107 and receives a second control signal output by the timing driving module 107; a source of the second NMOS transistor 124 Connected to the sensor ground SGND of the fingerprint sensing chip 100, and the drain of the second NMOS transistor 124 is connected to the output end of the boosting circuit 105 to receive the high voltage signal (12V) output by the boosting circuit 105. ).
  • a gate of the third NMOS transistor 134 is connected to the timing driving module 107 and receives a third control signal output by the timing driving module 107; a source of the third NMOS transistor 134 is connected to a device ground GND, and The drain of the third NMOS transistor 134 is connected to the sensor ground SGND of the fingerprint sensing chip 100.
  • the timing driving module 107 When the driving signal TX is in a low level state, the timing driving module 107 performs timing conversion processing on the driving signal TX to obtain a first control signal of a high level, and the bootstrap driving circuit 108 according to the high level
  • the first control signal controls the first NMOS transistor 114 to be turned on. Since the source of the first NMOS transistor 114 is connected to the power supply, and the drain of the first NMOS transistor 114 is connected to the sensor supply terminal SVDD, the first NMOS transistor 114 is turned on.
  • the high level of the sensor power supply terminal SVDD is the power supply voltage (3V) supplied by the power supply.
  • the timing driving module 107 further processes a second control signal of a low level according to the driving signal TX, and the second control signal of the low level is output to the second NMOS transistor 124 to disconnect the second NMOS transistor 124. Therefore, the high voltage signal (12V) outputted by the boosting circuit 105 at this time cannot be supplied to the sensor SGND.
  • the timing driving module 107 further obtains a third control signal of a high level by timing conversion and outputs the same to the gate of the third NMOS transistor 134, thereby turning on the third NMOS transistor 134, and the sensor ground SGND
  • the third NMOS transistor 134 is connected to the device ground GND, so the low level of the sensor ground SGND is the device ground GND. That is to say, when the driving signal TX is in the low level state, the power supply voltage (3V) supplied from the power supply source is substantially maintained between the sensor power supply terminal SVDD and the sensor ground SGND.
  • the timing driving module 107 obtains a first control signal of a low level, a second control signal of a high level, and a third control of a low level respectively by timing conversion. And outputting the first NMOS transistor 114 to the first NMOS transistor 114 by the bootstrap driving circuit 108, so that the power supply voltage (3V) supplied by the power supply cannot be directly supplied to the The sensor power supply terminal SVDD, at this time, the power stored in the storage capacitor 102 can supply power to the sensor power supply terminal SVDD; the low level third control signal control station The third NMOS transistor 134 is turned off to disconnect the sensor ground SGND from the device ground GND; at the same time, the high level second control signal controls the second NMOS transistor 124 to be turned on.
  • the sensor ground SGND is connected to the output of the booster circuit 105 through the second NMOS transistor 124, so the low level of the sensor ground SGND will jump to the output of the boost circuit 105 High voltage signal (12V). Since the voltage difference across the storage capacitor 102 does not change, the high level of the sensor supply terminal SVDD will be pulled up to the power supply voltage (3V) and the high voltage signal (12V). The sum (ie, 15V), that is, when the driving signal TX is in a high state, the power supply voltage provided by the power supply is still substantially maintained between the sensor power supply terminal SVDD and the sensor ground SGND. (3V).
  • the boosting circuit 105 and the switch circuit 104 of the floating control circuit 180 can make the low level of the sensor ground SGND of the fingerprint sensing chip 100
  • the high voltage signal provided by the boosting circuit 105 and the device ground GND are floatingly changed, that is, a so-called high voltage floating ground is realized, and the high level of the sensor power supply terminal SVDD of the fingerprint sensing chip 100 and the sensor ground SGND
  • a substantially constant supply voltage is maintained between the sensor supply terminal SVDD and the sensor ground SGND to supply power to the fingerprint sensing chip 100.
  • FIG. 3 is a schematic structural diagram of a fingerprint sensor according to Embodiment 3 of the present invention; the fingerprint sensor shown in FIG. 3 is similar to the embodiment shown in FIG. 2, and the main difference is that, in this embodiment, the first switch 114 a PMOS transistor, wherein the second switch 124 and the third switch 134 still employ an NMOS transistor; wherein a drain of the PMOS transistor is connected to a power supply to receive a power supply voltage (3V), a source of the PMOS transistor The pole is connected to the sensor supply terminal SVDD.
  • the first switch 114 a PMOS transistor, wherein the second switch 124 and the third switch 134 still employ an NMOS transistor; wherein a drain of the PMOS transistor is connected to a power supply to receive a power supply voltage (3V), a source of the PMOS transistor The pole is connected to the sensor supply terminal SVDD.
  • the timing control module 107 can directly generate the first control signal pair to perform on-off control as the PMOS transistor, the bootstrap driving circuit 108 in FIG. 2 described above can be omitted in this embodiment.
  • the first control signal provided by the timing driving module 107 to the first switch 114 according to the driving signal TX can be adjusted accordingly, so that the driving is performed.
  • the signal TX is low level
  • the first switch 114 and the third switch 134 are both turned on and the second switch 124 is turned off
  • the driving signal TX is high level
  • the first switch 114 is The three switches 134 are both open and the second switch 124 is open.
  • the specific working process of the fingerprint sensor shown in FIG. 3 can also refer to the related description of the above embodiment and The waveform diagram of Fig. 6 will not be described again here.
  • the communication interface includes: an interrupt signal (SINT) communication interface, an SPI data read signal (SMISO) communication interface, an SPI data write signal (SMOSI) communication interface, an SPI clock signal (SCLK) communication interface, and an SPI chip select signal ( SCS) Communication interface, reset signal (SRST) communication port, etc.
  • SINT interrupt signal
  • SMISO SPI data read signal
  • SCLK SPI clock signal
  • SCS SPI chip select signal
  • SCS reset signal
  • the communication interface includes: an interrupt signal (SINT) communication interface, an SPI data read signal (SMISO) communication interface, a SPI data write signal (SMOSI) communication interface, and an SPI clock signal. (SCLK) communication interface, SPI chip select signal (SCS) communication interface, reset signal (SRST) communication port, etc.
  • SINT interrupt signal
  • SMISO SPI data read signal
  • SCLK SPI clock signal
  • SCS SPI chip select signal
  • SRST reset signal
  • the boosting circuit 105 is exemplified by a high voltage signal that boosts a power supply voltage of 3V to 12V.
  • the high voltage signal output by the boosting circuit may also be 6V, 9V, 15V, 18V, etc., can be determined according to actual needs.
  • the boosting circuit 105 is mainly for realizing that the low level of the sensor SGND can be raised to a high voltage of 12V.
  • the boosting circuit 105 can also be an unnecessary component. In this case, the SGND of the sensor can still implement the floating function.
  • the above embodiment is described by taking the first switch 114 as a PMOS transistor or an NMOS transistor, and the second switch 124 and the third switch 134 as NMOS transistors as an example, and those skilled in the art
  • the timing driving module 107 is adjusted to perform timing conversion processing on the driving signal TX, The control signals adapted to the switching of other semiconductor switching devices are not described in detail.
  • the floating control circuit 180 is based on The driving signal TX provided by the fingerprint sensing chip 100 controls the on/off state switching of the first switch 114, the second switch 124, and the third switch 134, so that the sensor ground of the fingerprint sensing chip 100 is SGND.
  • the level achieves a high voltage floating variation, and causes the level of the sensor supply terminal SVDD to perform a high voltage floating change substantially synchronously, thereby maintaining a substantially constant supply voltage between the sensor supply terminal SVDD and the sensor ground SGND.
  • the signal-to-noise ratio of the fingerprint image is finally improved, which overcomes the defect that the signal-to-noise of the fingerprint image is relatively low due to the existence of the cover plate in the prior art.
  • the embodiment of the invention further provides an electronic terminal, which comprises the fingerprint sensor described in any of the above embodiments.
  • the apparatus provided by the embodiments of the present application can be implemented by a computer program.
  • Those skilled in the art should be able to understand that the foregoing unit and module division manners are only one of a plurality of division manners. If the division is other units or modules or does not divide the blocks, as long as the information object has the above functions, it should be in the present application. Within the scope of protection.
  • embodiments of the present application can be provided as a method, apparatus (device), or computer program product.
  • the present application can take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment in combination of software and hardware.
  • the application can take the form of a computer program product embodied on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) including computer usable program code.
  • the computer program instructions can also be stored in a computer readable memory that can direct a computer or other programmable data processing device to operate in a particular manner, such that the instructions stored in the computer readable memory produce an article of manufacture comprising the instruction device.
  • the apparatus implements the functions specified in one or more blocks of a flow or a flow and/or block diagram of the flowchart.

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Abstract

一种指纹传感器及电子终端，指纹传感器包括：指纹感应芯片（100）和浮地控制电路（180），指纹感应芯片（100）包括具有多个感应电极的传感器阵列（101）和驱动器（103）；传感器阵列（101）的感应电极用于与手指之间形成指纹电容（Cf）；驱动器（103）用于向浮地控制电路（180）输出驱动信号（TX）；指纹感应芯片（100）具有传感器供电端（SVDD）以及传感器地（SGND），传感器供电端（SVDD）以及传感器地（SGND）连接到浮地控制电路（180），分别用于接收浮地控制电路（180）输出的高电势和低电势；浮地控制电路（180）输出的高电势和低电势关于设备参考电势（GND）是可变的，且浮地控制电路（180）输出的高电势和低电势基本同步变化来维持一个基本恒定的供电电压并提供给指纹感应芯片（100），提高了指纹图像的信噪比，克服了现有技术中盖板的存在最终导致指纹图像的信噪比较低的缺陷。

Description

指纹传感器及电子终端 技术领域
本发明实施例涉及生物特征识别领域，尤其涉及一种指纹传感器及电子终端。
背景技术
由于指纹具有终身不变性、唯一性和方便性，因此可以提供更高级别的身份安全认证。而在该身份安全认证时，通常通过指纹传感器作为实现指纹自动采集的器件。
指纹传感器分为光学指纹传感器、半导体电容传感器、半导体热敏传感器、半导体压感传感器、超声波传感器和射频RF传感器等。
以半导体电容传感器为例，在一块集成有成千上万半导体器件的“平板”上，手指贴在其上与其构成了电容的另一个极板。由于手指平面凸凹不平，凸点处对应脊，凹点处对应谷，凸点处和凹点处接触平板的实际距离大小不同，进行形成电容数值不同的电容，设备根据这个原理将采集到的不同的电容数值汇总，从而完成了指纹的采集。
但是，在将上述指纹传感器应用于实际产品中时，通常需要在指纹传感器表面增加一层盖板。但是，由于盖板的存在，使得手指与指纹传感器之间的有效距离加长，导致可用来检测到的不同指纹区域的脊和谷的电信号之间差异较小，最终导致指纹检测图像信噪比(SNR，Signal-Noise Ratio)较低。
发明内容
本发明实施例的目的在于提供一种指纹传感器及电子终端，用以至少解决现有技术中的上述问题。
为实现本发明实施例的目的，本发明实施例提供了一种指纹传感器，其包括：指纹感应芯片和浮地控制电路，所述指纹感应芯片包括具有多个感应电极的传感器阵列和驱动器；所述传感器阵列的感应电极用于与手指之间形成指纹电容；所述驱动器用于向所述浮地控制电路输出驱动信号；所述指纹 感应芯片具有传感器供电端以及传感器地，所述传感器供电端以及传感器地连接到所述浮地控制电路，分别用于接收所述浮地控制电路输出的高电势和低电势；所述浮地控制电路包括开关电路，所述浮地控制电路用于根据所述驱动信号控制所述开关电路的开关通断状态以使输出的高电势和低电势关于设备参考电势是可变的，且所述浮地控制电路输出的高电势和低电势基本同步变化来维持一个基本恒定的供电电压并提供给所述指纹感应芯片。
本发明实施例还提供一种电子终端，其包括任一项实施例中所述的指纹传感器。
本发明实施例中，通过指纹感应芯片和浮地控制电路，所述指纹感应芯片包括具有多个感应电极的传感器阵列和驱动器；所述传感器阵列的感应电极用于与手指之间形成指纹电容；所述驱动器用于向所述浮地控制电路输出驱动信号；所述指纹感应芯片具有传感器供电端以及传感器地，所述传感器供电端以及传感器地连接到所述浮地控制电路，分别用于接收所述浮地控制电路输出的高电势和低电势；所述浮地控制电路输出的高电势和低电势关于设备参考电势是可变的，且所述浮地控制电路输出的高电势和低电势基本同步变化来维持一个基本恒定的供电电压并提供给所述指纹感应芯片，最终增加了驱动信号的幅度，提高了指纹图像的信噪比，克服了现有技术中由于盖板的存在最终导致指纹图像的信噪比较低的缺陷。
附图说明
图1为本发明实施例一中指纹传感器的结构示意图；
图2为本发明实施例二中指纹传感器的结构示意图；
图3为本发明实施例三中指纹传感器的结构示意图；
图4为本发明实施例四指纹传感器的结构示意图；
图5为本发明实施例五指纹传感器的结构示意图；
图6为本发明上述实施例中驱动信号TX、传感器地SGND、所述供电输入端SVDD的电平变化示意图；
具体实施方式
以下将配合图式及实施例来详细说明本申请的实施方式，藉此对本申请 如何应用技术手段来解决技术问题并达成技术功效的实现过程能充分理解并据以实施。
图1为本发明实施例一中指纹传感器的结构示意图；如图1所示，其包括指纹感应芯片100和浮地(Floating Ground)控制电路180；所述指纹感应芯片100包括具有多个感应电极的传感器阵列101和驱动器103。
其中，所述传感器阵列101的感应电极用于与手指之间形成指纹电容Cf。本实施例中，所述驱动器103连接到所述浮地控制电路180，用于向所述浮地控制电路180输出驱动信号(或称为激励信号)TX。并且，所述指纹感应芯片100还具有传感器供电端(Sensor VDD,简称SVDD)以及传感器地(Sensor Ground，简称SGND)，二者连接到所述浮地控制电路180，分别用于接收所述浮地控制电路180输出的高电势和低电势。所述浮地控制电路180输出的高电势和低电势关于设备参考电势GND(即设备地)是可变的，且二者基本同步变化来维持一个基本恒定的供电电压并提供给所述指纹感应芯片100。
应当理解，在本申请文件中所谓的低电势和高电势是相对而言的，即所述传感器地SGND的低电势仅仅是指其相对于所述传感器供电端SVDD接收到的高电势是较低的电平，所述低电势在实际产品实现上也可以是包括例如12V的高压信号。
所述浮地控制电路180主要包括储能电容102、开关电路104和升压电路105、。其中，所述浮地控制电路180从所述驱动器103接收的驱动信号TX用于控制所述开关电路104的开关通断状态，以使得提供给所述传感器地SGND的低电势相对于设备地GND是变化，即所述传感器地SGND的电平是浮动变化的。
具体地，所述升压电路105连接到供电电源，用于将所述供电电源输出的电源电压(比如3V电源电压)进行升压处理并产生高压信号(比如12V高压)。所述开关电路104一方面连接在所述供电电源和所述传感器供电端SVDD之间，且另一方面还连接在所述升压电路105和所述传感器地SGND之间。所述开关电路104通过开关通断状态切换将所述供电电源输出的电源电压周期性地输出给所述传感器供电端SVDD；并且，还通过其内部的开关通断状态切换将所述升压电路105输出的高压信号周期性地提供给所述传感器地SGND，从而实现高压浮动(HV Floating)的传感器地SGND。所述储能电容102连接 在所述传感器供电端SVDD和所述传感器地SGND之间，其主要用于使得提供给所述供电输入端SVDD的高电势与所述传感器地SGND的低电势维持基本同步变化的状态，从而为所述指纹感应芯片100提供所述基本恒定的供电电压。
本实施例中，所述开关电路104包括多个开关，所述驱动信号TX可以通过转换处理生成多个控制信号，分别控制所述多个开关的通断状态，以使得提供所述传感器地SGND的低电势和提供给所述传感器供电端SVDD的高电势基本同步地发生变化。
具体地，在图1所示的实施例中，所述开关电路104可以包括三个开关，分别为第一开关114、第二开关124以及第三开关134。所述第一开关114设置在所述供电电源与所述传感器供电端SVDD之间。所述第二开关124设置在所述升压电路105和所述传感器地SGND之间。所述第三开关134设置在设备地GND和所述传感器地SGND之间。并且，所述驱动信号TX可以通过转换处理生成第一控制信号、第二控制信号和第三控制信号，分别控制所述第一开关114、第二开关124和第三开关134的通断状态；其中，所述第一控制信号和所述第三控制信号可以控制所述第一开关114和第三开关134的同步通断，而所述第二控制信号可以控制所述第二开关124的通断状态与所述第三开关134相反，从而使得提供给所述传感器地SGND的低电势相对于设备地GND是变化的，且提供给所述传感器供电源SVDD的高电势与所述低电势是基本同步变化的。
具体地，在所述第一开关114和所述第三开关134同时导通时，所述第二开关124断开，此时所述传感器供电端SVDD连接所述供电电源并接收所述供电电源提供的电源电压(比如3V)，而所述传感器地SGND连接设备地GND，因此所述传感器地SGND被拉低到设备地GND，所述传感器供电端SVDD的高电势和所述传感器地SGND的低电势之间维持与所述电源电压基本一致的供电电压(即3V)。当所述第一开关114和第三开关134同时断开，而所述第二开关124导通时，所述传感器地SGND连接到所述升压电路并接收所述升压电路输出的高压信号(比如12V)，此时所述传感器地SGND的低电势从设备地GND跳变到所述高压信号，与此同时，由于储能电容102两端的电压差不会发生突变，所述传感器供电端SVDD的高电势将会被拉升到所述电源电压和所述高压信号之和(比如15V)，从而使得所述传感器供电端SVDD的高电势和所述 传感器地SGND的低电势之间依旧维持与所述电源电压基本一致的供电电压(即3V)。
上述关于所述第一控制信号、所述第二控制信号和所述第三控制信号控制所述第一开关114、所述第二开关124和所述第三开关134的动作过程，以及在所述第一开关114、所述第二开关124和所偶数第三开关134的通断状态切换过程中，所述驱动信号TX、所述传感器地SGND、所述传感器供电端SVDD的电平变化详见后续关于图6的详细解释。
图2为本发明实施例二中指纹传感器的结构示意图；如图2所示，本实施例中指纹传感器包括指纹感应芯片100和浮地控制电路180。所述指纹感应芯片100具有传感器供电端SVDD和传感器地SGND，且包括感应阵列(图中未示出)、驱动器103和驱动信号源106，其中所述驱动信号源生成驱动信号TX并通过所述驱动器103输出给所述浮地控制电路180。
所述浮地控制电路180包括开关电路104、升压电路105、时序驱动模块107、自举驱动电路108和储能电容102。
所述升压电路105可以为开关直流升压电路，比如Boost电路，其包括电感115、开关管125、二极管135、滤波电容145、PWM控制器155。请参阅图2，在所述升压电路105中，所述PWM控制器155用于产生脉宽调制信号并输出给所述开关管125以控制所述开关管125的开关状态。所述开关管125可以为MOS晶体管，其栅极连接到所述PWM控制器125，且其源极连接到设备地GND；所述开关管125的漏极一方面通过所述电感115连接到供电电源，且另一方面连接到所述二极管135的正极。所述二极管135的负极作为所述升压电路105的输出端并连接到所述开关电路104，并通过所述滤波电容145连接到设备地GND。其中，所述供电电源可以提供电源电压，比如图2所示的3V电源电压，且所述升压电路105可以通过升压处理来讲所述3V电源电压转换为12V高压信号。
本实施例中，所述时序驱动模块107连接在所述驱动器103和所述开关电路104之间，用于接收所述驱动信号TX并对所述驱动信号TX进行转换处理生成多个控制信号，并且根据所述多个控制信号分别控制所述开关电路104的多个开关的通断状态。具体地，所述时序驱动模块107可以通过对所述驱动器103输出的驱动信号TX进行时序转换处理生成，从而生成三个控制信号， 即第一控制信号、第二控制信号和第三控制信号。并且，所述开关电路104包括第一开关114、第二开关124和第三开关134，其中所述第一开关114、所述第二开关124和所述第三开关134可以均为晶体管开关，比如高速晶体管开关。所述时序驱动模块107可以通过时序转换处理将所述驱动信号TX转换为所述第一控制信号、所述第二控制信号和所述第三控制信号，并分别通过不同的控制端口输出以控制所述第一开关114、所述第二开关124和所述第三开关134的通断状态。其中，所述第一控制信号和所述第三控制信号可以控制所述第一开关114和所述第三开关134的同步通断，而所述第二控制信号控制所述第二开关124的通断状态与所述第一开关114相反，如上一实施例所述，由此使得提供给所述传感器地SGND的低电势相对于设备地GND是变化的，且配合所述储能电容102使得提供给所述传感器供电端SVDD的高电势与所述传感器地SGND的低电势是基本同步变化的，从而在所述传感器供电端SVDD和所述传感器地SGND之间维持一个基本恒定的供电电压来给所述指纹感应芯片100进行供电。
本实施例中，以所述第一开关114、所述第二开关124和所述第三开关134均为NMOS晶体管为例，以下分别将三者称为第一NMOS晶体管114、第二NMOS晶体管124和第三NMOS晶体管134。
所述自举驱动电路108连接到所述第一NMOS晶体管114的栅极，用于接收所述时序驱动模块107输出的第一控制信号，并根据所述第一控制信号驱动所述第一NMOS晶体管114从而控制其通断状态。所述第一NMOS晶体管114的源极连接到所述供电电源，并接收所述供电电源提供的供电电压(3V)；所述第一NMOS晶体管114的漏极连接到所述指纹感应芯片100的传感器供电端SVDD。
具体地，所述自举驱动电路108包括二极管118、第二储能电容128、放大器138，所述二极管118设置在所述第一NMOS晶体管的源极和门极之间，所述第二储能电容128一端与所述第一NMOS晶体管的门极连接，所述第二储能电容128的另一端与所述放大器138的输出端连接，所述放大器138的输入端与低电平状态的所述第一控制信号连接，以对低电平状态的所述第一控制信号进行转化处理形成高电平状态的第一控制信号。
所述第二NMOS晶体管124的栅极连接到所述时序驱动模块107并接收所述时序驱动模块107输出的第二控制信号；所述第二NMOS晶体管124的源极 连接到所述指纹感应芯片100的传感器地SGND，且所述第二NMOS晶体管124的漏极连接到所述升压电路105的输出端，以接收所述升压电路105输出的高压信号(12V)。
所述第三NMOS晶体管134的栅极连接到所述时序驱动模块107并接收所述时序驱动模块107输出的第三控制信号；所述第三NMOS晶体管134的源极连接到设备地GND，且所述第三NMOS晶体管134的漏极连接到所述指纹感应芯片100的传感器地SGND。
为更好理解本实施例提供的方案，以下结合图6对所述指纹传感器的工作过程进行简单介绍。
当驱动信号TX处于低电平状态时，所述时序驱动模块107对所述驱动信号TX进行时序转换处理得到高电平的第一控制信号，所述自举驱动电路108根据所述高电平的第一控制信号控制所述第一NMOS晶体管114导通。由于所述第一NMOS晶体管114的源极与所述供电电源连接，而所述第一NMOS晶体管114的漏极与所述传感器供电端SVDD连接，因此，所述第一NMOS晶体管114导通使得所述传感器供电端SVDD的高电平为所述供电电源提供的电源电压(3V)。
所述时序驱动模块107还根据所述驱动信号TX处理得到低电平的第二控制信号，所述低电平的第二控制信号输出到第二NMOS晶体管124从而使得第二NMOS晶体管124断开，因而此时所述升压电路105输出的高压信号(12V)无法提供给所述传感器地SGND。所述时序驱动模块107还通过时序转换得到高电平的第三控制信号并输出给所述第三NMOS晶体管134的栅极，从而使得第三NMOS晶体管134导通，此时所述传感器地SGND通过所述第三NMOS晶体管134连接到设备地GND，因此所述传感器地SGND的低电平为设备地GND。也即是说，在所述驱动信号TX处于低电平状态时，所述传感器供电端SVDD和所述传感器地SGND之间基本维持所述供电电源提供的电源电压(3V)。
当所述驱动信号TX转换为高电平状态时，所述时序驱动模块107通过时序转换分别得到低电平的第一控制信号、高电平的第二控制信号和低电平的第三控制信号，并通过所述自举驱动电路108输出给所述第一NMOS晶体管114而使得所述第一NMOS晶体管114断开，因此所述供电电源提供的电源电压(3V)无法直接提供给所述传感器供电端SVDD，此时所述储能电容102储存的电量可以为所述传感器供电端SVDD进行供电；所述低电平的第三控制信号控制所 述第三NMOS晶体管134断开从而使得所述传感器地SGND断开与所述设备地GND的连接；与此同时，所述高电平的第二控制信号控制所述第二NMOS晶体管124导通，从而使得所述传感器地SGND通过所述第二NMOS晶体管124连接到所述升压电路105的输出端，因此所述传感器地SGND的低电平将会跳变到所述升压电路105输出的高压信号(12V)。由于所述储能电容102两端的电压差不会发生突变，因此，此时所述传感器供电端SVDD的高电平将被拉升到所述电源电压(3V)和所述高压信号(12V)之和(即15V)，也即是说，在所述驱动信号TX处于高电平状态时，所述传感器供电端SVDD和所述传感器地SGND之间依旧基本维持所述供电电源提供的电源电压(3V)。
由此可见，在本实施例提供的指纹传感器中，通过所述浮地控制电路180的升压电路105和开关电路104可以使得所述指纹感应芯片100的传感器地SGND的低电平是在所述升压电路105提供的高压信号和设备地GND之间浮动变化的，即实现所谓的高压浮地，且所述指纹感应芯片100的传感器供电端SVDD的高电平与所述传感器地SGND的低电平时基本同步变化的，从而保证所述传感器供电端SVDD和所述传感器地SGND之间维持基本恒定的供电电压来为所述指纹感应芯片100供电。
图3为本发明实施例三中指纹传感器的结构示意图；图3所示的指纹传感器与上述图2所示的实施例相类似，主要区别在于，在本实施例中，所述第一开关114为PMOS晶体管，而所述第二开关124和所述第三开关134依旧采用NMOS晶体管；其中，所述PMOS晶体管的漏极连接到供电电源以接收电源电压(3V)，所述PMOS晶体管的源极与所述传感器供电端SVDD连接。
另外，考虑到可以使用上述时序驱动模块107直接生成第一控制信号对作为所述PMOS管进行通断控制，因此本实施例可省略上述图2中的自举驱动电路108。
由于本实施例的第一开关114采用PMOS晶体管，因此所述时序驱动模块107根据所述驱动信号TX提供给所述第一开关114的第一控制信号可以相应进行调整，从而使得在所述驱动信号TX为低电平时所述第一开关114和所述第三开关134均导通而所述第二开关124断开，且在所述驱动信号TX为高电平时所述第一开关114第三开关134均断开而所述第二开关124断开。图3所示的指纹传感器的具体工作过程同样可以参考上述实施例的相关描述以及 图6的波形图，此处不再赘述。
图4为本发明实施例四指纹传感器的结构示意图；图4所示的指纹传感器主要是在上述图2的基础上增加了电平转换模块109，用于对所述指纹感应芯片100与主控端的通信接口之间进行数据传输的通信电平进行转换，使得转换后的通信电平与主控端匹配。所述通信接口包括：中断信号(SINT)通信接口、SPI数据读取信号(SMISO)通信接口、SPI数据写入信号(SMOSI)通信接口、SPI时钟信号(SCLK)通信接口、SPI片选信号(SCS)通信接口、复位信号(SRST)通信端口等。
图5为本发明实施例五指纹传感器的结构示意图；图5所示的指纹传感器主要是在上述图3的基础上增加了电平转换模块109，用于对所述指纹传感器与主控端的通信接口之间进行数据传输的通信电平进行转换，使得转换后的通信电平与主控端匹配。与图4所示的实施例相类似，所述通信接口包括：中断信号(SINT)通信接口、SPI数据读取信号(SMISO)通信接口、SPI数据写入信号(SMOSI)通信接口、SPI时钟信号(SCLK)通信接口、SPI片选信号(SCS)通信接口、复位信号(SRST)通信端口等。
需要说明的是，上述各个实施例中所述升压电路105以将3V的电源电压升压到12V的高压信号为例，而在实际产品中，所述升压电路输出的高压信号还可以为6V、9V、15V、18V等，具体可以根据实际需要确定。另外，应当理解，所述升压电路105主要是为了实现所述传感器地SGND的低电平可以提升到12V的高压，在其他替代实施例中，所述升压电路105也可以是非必要的部件，在这种情况下所述传感器地SGND依旧可以实现浮地功能。
另外，上述实施例仅以所述第一开关114为PMOS晶体管或者NMOS晶体管、而所述第二开关124和第三开关134均为NMOS晶体管为例进行了说明，而对于本领域普通技术人员来说，在上述实施例的启发下，还可以通过其他半导体开关器件实现，对应地，根据其他半导体开关器件的通断要求，调整上述时序驱动模块107对所述驱动信号TX进行时序转化处理，得到适配于其他半导体开关器件通断的控制信号，详细不再赘述。
由此可见，在本申请提供的指纹传感器中，所述浮地控制电路180根据 所述指纹感应芯片100提供的驱动信号TX来控制所述第一开关114、所述第二开关124和所述第三开关134的通断状态切换，使得所述指纹感应芯片100的传感器地SGND的电平实现高压浮动变化，并使得所述传感器供电端SVDD的电平基本同步地进行高压浮动变化，从而在所述传感器供电端SVDD和所述传感器地SGND之间维持一个基本恒定的供电电压来为所述指纹感应芯片100供电，最终提高了指纹图像的信噪比，克服了现有技术中由于盖板的存在最终导致指纹图像的信噪比较低的缺陷。
本发明实施例还提供一种电子终端，其包括上述任一项实施例中所述的指纹传感器。
本申请的实施例所提供的装置可通过计算机程序实现。本领域技术人员应该能够理解，上述的单元以及模块划分方式仅是众多划分方式中的一种，如果划分为其他单元或模块或不划分块，只要信息对象的具有上述功能，都应该在本申请的保护范围之内。
本领域的技术人员应明白，本申请的实施例可提供为方法、装置(设备)、或计算机程序产品。因此，本申请可采用完全硬件实施例、完全软件实施例、或结合软件和硬件方面的实施例的形式。而且，本申请可采用在一个或多个其中包含有计算机可用程序代码的计算机可用存储介质(包括但不限于磁盘存储器、CD-ROM、光学存储器等)上实施的计算机程序产品的形式。
本申请是参照根据本申请实施例的方法、装置(设备)和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到通用计算机、专用计算机、嵌入式处理机或其他可编程数据处理设备的处理器以产生一个机器，使得通过计算机或其他可编程数据处理设备的处理器执行的指令产生用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。
这些计算机程序指令也可存储在能引导计算机或其他可编程数据处理设备以特定方式工作的计算机可读存储器中，使得存储在该计算机可读存储器中的指令产生包括指令装置的制造品，该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。
这些计算机程序指令也可装载到计算机或其他可编程数据处理设备上，使得在计算机或其他可编程设备上执行一系列操作步骤以产生计算机实现的 处理，从而在计算机或其他可编程设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。
尽管已描述了本申请的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本申请范围的所有变更和修改。显然，本领域的技术人员可以对本申请进行各种改动和变型而不脱离本申请的精神和范围。这样，倘若本申请的这些修改和变型属于本申请权利要求及其等同技术的范围之内，则本申请也意图包含这些改动和变型在内。

Claims (18)

  1. 一种指纹传感器，其特征在于，包括：指纹感应芯片和浮地控制电路，所述指纹感应芯片包括具有多个感应电极的传感器阵列和驱动器；所述传感器阵列的感应电极用于与手指之间形成指纹电容；所述驱动器用于向所述浮地控制电路输出驱动信号；所述指纹感应芯片具有传感器供电端以及传感器地，所述传感器供电端以及传感器地连接到所述浮地控制电路，分别用于接收所述浮地控制电路输出的高电势和低电势；所述浮地控制电路包括开关电路，所述浮地控制电路用于根据所述驱动信号控制所述开关电路的开关通断状态以使输出的高电势和低电势关于设备参考电势是可变的，且所述浮地控制电路输出的高电势和低电势基本同步变化来维持一个基本恒定的供电电压并提供给所述指纹感应芯片。
  2. 根据权利要求1所述的指纹传感器，其特征在于，所述浮地控制电路包括升压电路和储能电容，所述升压电路连接到供电电源，用于将所述供电电源输出的电源电压行升压处理并产生高压信号以提供给所述传感器地；所述储能电容连接在所述传感器供电端和所述传感器地之间，用于使得提供给所述供电输入端的高电势与所述传感器地的低电势维持基本同步变化的状态，从而为所述指纹感应芯片提供所述基本恒定的供电电压。
  3. 根据要求2所述的指纹传感器，其特征在于，所述开关电路一方面连接在所述供电电源和所述传感器供电端之间，且另一方面连接在所述升压电路和所述传感器地，所述开关电路通过开关通断状态切换将所述供电电源输出的电源电压周期性地输出给所述传感器供电端，且还通过开关通断状态切换将所述升压电路输出的高压信号周期性地提供给所述传感器地，以实现高压浮动的所述传感器地。
  4. 根据权利要求2所述的指纹传感器，其特征在于，所述开关电路包括多个开关，所述驱动信号通过转换处理生成多个控制信号，分别控制所述多个开关的通断状态，以使得提供所述传感器地的低电势和提供给所述传感器供电端的高电势基本同步地发生变化。
  5. 根据权利要求4所述的指纹传感器，其特征在于，所述开关电路包括第一开关、第二开关以及第三开关；所述第一开关设置在所述供电电源与所述传感器供电端之间，所述第二开关设置在所述升压电路和所述传感器地 之间，所述第三开关设置在设备地和所述传感器地之间；所述驱动信号通过转换处理生成第一控制信号、第二控制信号、第三控制信号，分别控制所述第一开关、第二开关、第三开关的通断状态。
  6. 根据权利要求5所述的指纹传感器，其特征在于，所述第一控制信号和所述第三控制信号控制所述第一开关和第三开关的同步通断，而所述第二控制信号控制所述第二开关的通断状态与所述第三开关相反，以使得提供给所述传感器地的低电势相对于设备地是变化的，且提供给所述传感器供电源的高电势与所述低电势是基本同步变化的。
  7. 根据权利要求1所述的指纹传感器，其特征在于，所述指纹感应芯片还包括驱动信号源，所述驱动信号源生成驱动信号并通过所述驱动器输出至所述浮地控制电路。
  8. 根据权利要求1所述的指纹传感器，其特征在于，所述浮地控制电路包括开关电路、升压电路、时序驱动模块和储能电容，所述升压电路连接到供电电源，用于将所述供电电源输出的电源电压行升压处理并产生高压信号以提供给所述传感器地；所述时序驱动模块连接在所述驱动器和所述开关电路之间，用于接收所述驱动信号并对所述驱动信号进行转换处理生成多个控制信号，以根据所述多个控制信号分别控制所述开关电路的多个开关的通断状态，以使得提供给所述传感器地的低电势相对于设备参考电势浮动变化；所述储能电容连接在所述传感器供电端和所述传感器地之间，用于使得提供给所述供电输入端的高电势与所述传感器地的低电势维持基本同步变化的状态，从而为所述指纹感应芯片提供所述基本恒定的供电电压。
  9. 根据权利要求2或8所述的指纹传感器，其特征在于，所述升压电路包括:电感、开关管、二极管、滤波电容、PWM控制器,所述PWM控制器用于产生脉宽调制信号并输出给所述开关管以控制所述开关管的开关状态；所述开关管为MOS晶体管，其栅极连接到所述PWM控制器，且其源极连接到设备地；所述开关管的漏极一方面通过所述电感连接到供电电源，且另一方面连接到所述二极管的正极；所述二极管的负极作为所述升压电路的输出端并连接到所述开关电路，并通过所述滤波电容连接到设备地。
  10. 根据权利要求8所述的指纹传感器，其特征在于，所述开关电路包括第一开关、第二开关和第三开关，其中所述时序驱动模块通过时序转换处理将所述驱动信号转换为所述第一控制信号、所述第二控制信号和所述第三 控制信号，并分别通过不同的控制端口输出以控制所述第一开关、所述第二开关和所述第三开关的通断状态。
  11. 根据权利要求10所述的指纹传感器，其特征在于，所述浮地控制电路还包括自举驱动电路，用于接收所述时序驱动模块输出的第一控制信号，并根据所述第一控制信号驱动所述第一开关从而控制其通断状态。
  12. 根据权利要求11所述的指纹传感器，其特征在于，所述第一开关为第一NMOS晶体管，所述自举驱动电路连接到所述第一NMOS晶体管的栅极，用于接收所述时序驱动模块输出的第一控制信号，并根据所述第一控制信号驱动所述第一NMOS晶体管从而控制其通断状态，所述第一NMOS晶体管的源极连接到所述供电电源，并接收所述供电电源提供的供电电压，所述第一NMOS晶体管的漏极连接到所述指纹感应芯片的传感器供电端。
  13. 根据权利要求12所述的指纹传感器，其特征在于，所述自举驱动电路包括：二极管、第二储能电容、放大器，所述二极管设置在所述第一NMOS晶体管的源极和门极之间，所述第二储能电容一端与所述第一NMOS晶体管的门极连接，所述第二储能电容的另一端与所述放大器的输出端连接，所述放大器的输入端与所述第一控制信号连接。
  14. 根据权利要求10所述的指纹传感器，其特征在于，所述第一开关为PMOS晶体管，所述PMOS管的漏极连接到供电电源以接收电源电压，所述PMOS管的源极与所述传感器供电端连接。
  15. 根据权利要求10所述的指纹传感器，其特征在于，所述第二开关为第二NMOS晶体管，所述第二NMOS晶体管的栅极连接到所述时序驱动模块并接收所述时序驱动模块输出的第二控制信号；所述第二NMOS晶体管的源极连接到所述指纹感应芯片的传感器地SGND，且所述第二NMOS晶体管的漏极连接到所述升压电路的输出端，以接收所述升压电路输出的高压信号。
  16. 根据权利要求10所述的指纹传感器，其特征在于，所述第三开关位第三NMOS晶体管，所述第三NMOS晶体管的栅极连接到所述时序驱动模块并接收所述时序驱动模块输出的第三控制信号；所述第三NMOS晶体管的源极连接到设备地，且所述第三NMOS晶体管的漏极连接到所述指纹感应芯片的传感器地。
  17. 根据权利要求1所述的指纹传感器，其特征在于，还包括：电平转换模块，用于对所述指纹传感芯片与主控端的通信接口之间进行数据传输的 通信电平进行转换，使得转换后的通信电平与主控端匹配。
  18. 一种电子终端，其特征在于，包括权利要求1-17任一项所述的指纹传感器。
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US10872217B2 (en) 2020-12-22
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