WO2018089579A3 - Scandium-containing iii-n etch-stop layers for selective etching of iii-nitrides and related materials - Google Patents

Scandium-containing iii-n etch-stop layers for selective etching of iii-nitrides and related materials Download PDF

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Publication number
WO2018089579A3
WO2018089579A3 PCT/US2017/060771 US2017060771W WO2018089579A3 WO 2018089579 A3 WO2018089579 A3 WO 2018089579A3 US 2017060771 W US2017060771 W US 2017060771W WO 2018089579 A3 WO2018089579 A3 WO 2018089579A3
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WO
WIPO (PCT)
Prior art keywords
iii
etch
scandium
material layer
containing material
Prior art date
Application number
PCT/US2017/060771
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French (fr)
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WO2018089579A2 (en
Inventor
Matthew T. Hardy
Brian P. DOWNEY
David J. Mayer
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The Goverment of the United States of America, as represented by the Secretary of the Navy
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Publication date
Application filed by The Goverment of the United States of America, as represented by the Secretary of the Navy filed Critical The Goverment of the United States of America, as represented by the Secretary of the Navy
Priority to EP17870039.9A priority Critical patent/EP3539155A4/en
Publication of WO2018089579A2 publication Critical patent/WO2018089579A2/en
Publication of WO2018089579A3 publication Critical patent/WO2018089579A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)

Abstract

A semiconductor device structure including a scandium (Sc)- or yttrium (Y)-containing material layer situated between a substrate and one or more overlying layers. The Sc- or Y-containing material layer serves as an etch-stop during fabrication of one or more devices from overlying layers situated above the Sc- or Y-containing material layer. The Sc- or Y-containing material layer can be grown within an epitaxial group Ill-nitride device structure for applications such as electronics, optoelectronics, and acoustoelectronics, and can improve the etch-depth accuracy, reproducibility and uniformity.
PCT/US2017/060771 2016-11-10 2017-11-09 Scandium-containing iii-n etch-stop layers for selective etching of iii-nitrides and related materials WO2018089579A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP17870039.9A EP3539155A4 (en) 2016-11-10 2017-11-09 Scandium-containing iii-n etch-stop layers for selective etching of iii-nitrides and related materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662420029P 2016-11-10 2016-11-10
US62/420,029 2016-11-10

Publications (2)

Publication Number Publication Date
WO2018089579A2 WO2018089579A2 (en) 2018-05-17
WO2018089579A3 true WO2018089579A3 (en) 2018-07-26

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US (1) US10283597B2 (en)
EP (1) EP3539155A4 (en)
WO (1) WO2018089579A2 (en)

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US10355014B1 (en) * 2017-12-22 2019-07-16 Micron Technology, Inc. Assemblies having vertically-extending structures
US11262604B2 (en) * 2018-05-11 2022-03-01 Raytheon Bbn Technologies Corp. Photonic devices
US11054673B2 (en) 2018-05-11 2021-07-06 Raytheon Bbn Technologies Corp. Photonic devices
KR102634586B1 (en) * 2018-06-11 2024-02-07 삼성디스플레이 주식회사 Light emitting element, method of manufacturing the same and display device comprising the light emitting element
CN108615756A (en) * 2018-06-15 2018-10-02 苏州汉骅半导体有限公司 Semiconductor devices
US10651048B1 (en) * 2018-08-28 2020-05-12 National Technology & Engineering Solutions Of Sandia, Llc ScAIN etch mask for highly selective etching
CN111653617B (en) * 2020-03-31 2022-09-09 厦门市三安集成电路有限公司 Enhanced nitride power device and manufacturing method
WO2021225426A1 (en) * 2020-05-08 2021-11-11 An Sang Jeong Method for manufacturing piezoelectric thin film and device using same thin film
KR102457270B1 (en) * 2020-05-08 2022-10-21 웨이브로드 주식회사 Method of manufactruring piezoelectric thin film and device using the same
US11848662B2 (en) 2020-09-11 2023-12-19 Raytheon Company Tunable monolithic group III-nitride filter banks
US20220122837A1 (en) * 2020-10-21 2022-04-21 University Of South Carolina Approach for Fabricating N-Polar AlxGa1-xN Devices
CN112531460B (en) * 2020-12-07 2021-11-02 全磊光电股份有限公司 DFB laser working at high temperature and epitaxial structure growth method
US11942919B2 (en) 2021-01-11 2024-03-26 Raytheon Company Strain compensated rare earth group III-nitride heterostructures
WO2023022768A2 (en) * 2021-05-07 2023-02-23 The Regents Of The University Of Michigan Epitaxial nitride ferroelectronics
WO2023167709A2 (en) * 2021-08-24 2023-09-07 The Regents Of The University Of Michigan Semiconductor heterostructures with scandium iii-nitride layer
WO2023214993A2 (en) * 2021-10-22 2023-11-09 The Regents Of The University Of Michigan Semiconductor heterostructures with quaternary iii-nitride alloy

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US20090029555A1 (en) * 2007-07-26 2009-01-29 Unity Semiconductor Corporation Multi-Step selective etching for cross-point memory
WO2010013821A1 (en) * 2008-07-28 2010-02-04 Canon Kabushiki Kaisha Method of producing optical element and optical element
US20120061683A1 (en) * 2009-03-27 2012-03-15 Dowa Electronics Materials Co., Ltd. Group iii nitride semiconductor growth substrate, group iii nitride semiconductor epitaxial substrate, group iii nitride semiconductor element and group iii nitride semiconductor free-standing substrate, and method of producing the same
US20130084441A1 (en) * 2011-09-29 2013-04-04 Seagate Technology Llc Optical articles and methods of making same
US20150140710A1 (en) * 2013-10-18 2015-05-21 Soraa Laser Diode, Inc. Manufacturable laser diode formed on c-plane gallium and nitrogen material

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Also Published As

Publication number Publication date
EP3539155A2 (en) 2019-09-18
US20180130883A1 (en) 2018-05-10
EP3539155A4 (en) 2020-06-17
WO2018089579A2 (en) 2018-05-17
US10283597B2 (en) 2019-05-07

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