WO2018085250A1 - Backside illuminated global shutter cmos image sensor - Google Patents

Backside illuminated global shutter cmos image sensor Download PDF

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Publication number
WO2018085250A1
WO2018085250A1 PCT/US2017/059242 US2017059242W WO2018085250A1 WO 2018085250 A1 WO2018085250 A1 WO 2018085250A1 US 2017059242 W US2017059242 W US 2017059242W WO 2018085250 A1 WO2018085250 A1 WO 2018085250A1
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WO
WIPO (PCT)
Prior art keywords
trench
storage node
sensor
substrate
disposed
Prior art date
Application number
PCT/US2017/059242
Other languages
French (fr)
Inventor
R. Daniel Mcgrath
Original Assignee
Bae Systems Information And Electronic Systems Integration Inc.
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Filing date
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Application filed by Bae Systems Information And Electronic Systems Integration Inc. filed Critical Bae Systems Information And Electronic Systems Integration Inc.
Publication of WO2018085250A1 publication Critical patent/WO2018085250A1/en

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures

Definitions

  • the invention relates to CMOS Image Sensors, and, more particularly, to global shutter equipped backside illuminated image sensors.
  • a conformal or close fitting metal layer 2 e.g. , Tungsten
  • Tungsten a conformal or close fitting metal layer 2
  • the photons hit a back surface of the silicon 5 which is located a distance from the storage node volume 3 that is comparable to the pixel dimension and the storage node geometry.
  • a metal layer 4 created on the back surface of the silicon is ineffective in preventing subsequent photons from entering the storage node volume due to diffraction and the spread in chief ray angle acting over the distance between the metal layer and the storage node volume (i.e. , the nominal thickness of the Si) .
  • One embodiment of the present disclosure provides a system for photonic isolation of storage nodes, the system comprising: at least one storage node disposed on a substrate paired with a backside illuminated photonic sensor and configured to receive data collected by the sensor until read; at least one trench disposed in the substrate, the trench being aligned with the storage node; a photonic block, disposed in the trench, proximate to the storage node and blocking photons to at least a portion of the storage node.
  • Another embodiment provides such a system wherein the trench is straight walled.
  • a further embodiment provides such a system wherein the trench has a broad area disposed proximate to the storage node.
  • Yet another embodiment provides such a system wherein the trench has a shaft narrower than the broad area, the shaft connecting the broad area to the surface of the substrate opposite to the storage node.
  • a yet further embodiment provides such a system wherein the trench extends from a surface of the substrate opposite to the storage node to a doping gradient disposed around the storage node.
  • Still another embodiment provides such a system wherein at least a portion of the trench is filled with an optically opaque material.
  • a still further embodiment provides such a system wherein the optically opaque material is a metal.
  • the optically opaque material is an organic material filled with nanoparticles .
  • An even further embodiment provides such a system wherein the opaque material is an organic material filled with an antireflective optical stack.
  • a still even another embodiment provides such a system wherein at least a portion of the trench is filled with a photo-absorptive material.
  • a still even further embodiment provides such a system wherein a remainder of the trench is left empty.
  • One embodiment provides a method for photonic blocking of at least a portion of a backside illuminated sensor, the method comprising : disposing a trench extending from a first surface of a substrate upon which the sensor is disposed, to a doping gradient disposed proximate to the sensor; providing a bottom of the trench having a geometry substantially coincident with the shape of the portion; and filling at least the bottom of the trench with an optically opaque material.
  • optically opaque material is a metal
  • a further embodiment provides such a method wherein the optically opaque material is an organic material filled with nanoparticles .
  • optically opaque material is an organic material filled with an antireflective optical stack.
  • a yet further embodiment provides such a method wherein the trench is straight walled.
  • Still another embodiment provides such a method wherein the trench has a shaft narrower than the bottom, the shaft connecting the bottom to the surface of the substrate opposite to the storage node.
  • a still further embodiment provides such a method wherein walls of the trench are angled.
  • One embodiment provides a camera, the camera comprising at least one backside illuminated sensor wherein a photonic block is disposed proximate to the storage node at a first end of a trench disposed in a substrate upon which the sensor is built.
  • Figure 1 is a block diagram illustrating a known front illuminated sensor.
  • Figure 2 is a block diagram illustrating a known backside illuminated sensor with a photonic block disposed on a backside of the substrate.
  • Figure 3 is a block diagram illustrating backside illuminated sensor configured according to one embodiment.
  • Figure 4 is a block diagram illustrating an array backside illuminated sensors having global shutter function and configured according to one embodiment.
  • Figure 5 is a flowchart illustrating a method for isolating a storage node configured according to one embodiment.
  • Figure 6 is a block diagram illustrating a camera comprising a backside illuminated sensor configured according to one embodiment of the disclosure.
  • one embodiment 10 provides a CMOS Image Sensor 20 that employs backside illumination (B SI) on a substrate 12.
  • optical block 26 disposed in an intra-pixel trench 14 are disposed through the substrate 12.
  • the trench 14 extends into the substrate 12.
  • the trench 14 and is positioned within a pixel.
  • the trench 14 is positioned so that one end is disposed proximate to a storage node 22 of the pixel, with a layer of doped region 24 disposed between the trench and the storage node.
  • substantially all of the depth of the substrate 12 may be penetrated by the optical block 26 so that the deepest point is disposed proximate to the portion of the device which is sought to be protected, while in others the trench 14 only extends to an depth to block photons entering through the substrate 12 from reaching the storage node 22, without interfering with the processing of charge.
  • One embodiment provides an optical block 26 physically close to the storage node 22 by etching a trench 14 from the back surface 30 of the silicon substrate and filling the bottom of the trench 14 with an optical block 26 material.
  • the optical block 26 material is an optically opaque or absorptive material such as metal, such as Tungsten, organics that may be filled with nanoparticles or an antireflective optical stack structure. Absorptive materials of the optical block 26 may include but are not limited to polysilicon and similar materials. In those parts of the trench 14 not occupied by the block 26, the trench 14 may be empty or filled.
  • the trench 14 could be of various shapes, as illustrated in Fig. 4, for instance straight-walled 36, widening away 34 from the block 26 or t-shaped32.
  • a broad feature 28 near the storage node 22 is provided to accommodate the block 26.
  • the trench 14 including the broad feature 28 should be deep enough to reach the doping gradient 24 that protects the storage node 22 from photo- carrier collection.
  • Trenches 14 may be made through the plasma or chemical etching or combinations of the same or such other techniques as would be understood by those skilled in the art to allow for controlled removal of substrate 12 material in alignment with the storage node 22. In one embodiment, etches are completed after the completion of the structures disposed on the substrate 12, while one skilled in the art would foresee that trenches 14 extended prior to completion of the structures would also be within the scope of this disclosure.
  • the photonic isolation of storage nodes 22 is provided by a system comprising at least one storage node 22 disposed on a substrate 12 paired with a backside illuminated photonic sensor 20 and configured to receive data collected by the sensor 20 until read.
  • At least one trench 14 is disposed in the substrate 12 of such embodiments , the trench 14 being aligned with the storage node 22.
  • Such embodiments may also include a photonic block disposed in the trench 14 , proximate to the storage node 22, whereby photons are block from reaching at least a portion of the storage node 22.
  • the trench 14 may be straight walled.
  • the trench 14 has a broad area 28 disposed proximate to the storage node 22.
  • the trench 14 has a shaft narrower than the broad area, the shaft connecting the broad area to the surface of the substrate 12 opposite to the storage node 22.
  • the trench 14 extends from a surface of the substrate 12 opposite to the storage node 22 to a doping gradient 24 disposed around the storage node 22.
  • the trench 14 may be filled with an optically opaque material 26, which may be a metal, an organic material filled with nanoparticles, or an organic material filled with an antireflective optical stack. Alternatively, at least a portion of the trench 14 may be filled with a photo-absorptive material 26. In embodiments where the trench 14 is filled, such filling may be partial, with a remainder of the trench 14 left empty. [0040] In embodiments a method, as illustrated in Fig.
  • a backside illuminated sensor for photonic blocking of at least a portion of a backside illuminated sensor involving disposing a trench extending from a first surface of a substrate upon which the sensor is disposed to a doping gradient disposed proximate to the sensor 40 , providing a bottom of the trench having a geometry substantially coincident with the shape of the portion 42, and filling at least the bottom of the trench with an optically opaque material is provided 44.
  • metal, an organic material filled with nanoparticles, or an organic material filled with an antireflective optical stack may serve as the optically opaque material.
  • the trench 14 is straight walled. In other embodiments, the trench 14 has a shaft portion that is narrower than the bottom, the shaft connecting the bottom to the surface of the substrate 12 opposite to the storage node 22. In other cases, the walls of the trench 14 are angled.
  • a camera 50 comprising a lens 52 and at least one backside illuminated sensor 10 wherein a photonic block as described in the disclosure which is disposed proximate to the storage node at a first end of a trench disposed in a substrate upon which the sensor is built.

Abstract

A system and method are provided for photonic isolation of storage nodes, with at least one storage node disposed on a substrate paired with a backside illuminated photonic sensor and configured to receive data collected by the sensor until read; at least one trench disposed in the substrate, the trench being aligned with the storage node; and a photonic block, disposed in the trench, proximate to the storage node and blocking photons to at least a portion of the storage node.

Description

BACKSIDE ILLUMINATED GLOB AL SHUTTER CMOS
IMAGE SENSOR
CROS S-REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of U. S . Patent Application No . 15/342,253 , filed on November 3 , 2016, which is herein
incorporated by reference in its entirety.
FIELD
[0001] The invention relates to CMOS Image Sensors, and, more particularly, to global shutter equipped backside illuminated image sensors.
BACKGROUND
[0002] Global shutter operation is carried out in a solid-state image sensor by having a means of simultaneously beginning and ending signal charge integration. The goal is to be able to electronically shutter the exposure, removing the need for a mechanical shutter. The problem is that after the end of signal charge integration the charge needs to be protected until it is sequentially read from both photo-carriers generated by subsequent light and from photons entering the volume of the storage node so they do not produce local photon-carriers. The first problem has solutions related to the doping of the structure around the storage node so that it only collects charge from a shallow layer on the device side of the image sensor silicon. The second problem is handled on front-side illuminated devices, as illustrated in Fig. 1 , by using a conformal or close fitting metal layer 2 (e.g. , Tungsten), that optically blocks photons from physically entering the storage node 3. This works because the collection volume of the storage node 3 is close to the front side. For back-side illumination, as illustrated in Fig. 2 the photons hit a back surface of the silicon 5 which is located a distance from the storage node volume 3 that is comparable to the pixel dimension and the storage node geometry. A metal layer 4 created on the back surface of the silicon is ineffective in preventing subsequent photons from entering the storage node volume due to diffraction and the spread in chief ray angle acting over the distance between the metal layer and the storage node volume (i.e. , the nominal thickness of the Si) .
[0003] What is needed, therefore, are techniques for effectively shielding a storage node in a backside illuminated sensor.
SUMMARY
[0004] One embodiment of the present disclosure provides a system for photonic isolation of storage nodes, the system comprising: at least one storage node disposed on a substrate paired with a backside illuminated photonic sensor and configured to receive data collected by the sensor until read; at least one trench disposed in the substrate, the trench being aligned with the storage node; a photonic block, disposed in the trench, proximate to the storage node and blocking photons to at least a portion of the storage node.
[0005] Another embodiment provides such a system wherein the trench is straight walled.
[0006] A further embodiment provides such a system wherein the trench has a broad area disposed proximate to the storage node.
[0007] Yet another embodiment provides such a system wherein the trench has a shaft narrower than the broad area, the shaft connecting the broad area to the surface of the substrate opposite to the storage node.
[0008] A yet further embodiment provides such a system wherein the trench extends from a surface of the substrate opposite to the storage node to a doping gradient disposed around the storage node.
[0009] Still another embodiment provides such a system wherein at least a portion of the trench is filled with an optically opaque material.
[0010] A still further embodiment provides such a system wherein the optically opaque material is a metal. [0011] Even another embodiment provides such a system wherein the optically opaque material is an organic material filled with nanoparticles .
[0012] An even further embodiment provides such a system wherein the opaque material is an organic material filled with an antireflective optical stack.
[0013] A still even another embodiment provides such a system wherein at least a portion of the trench is filled with a photo-absorptive material.
[0014] A still even further embodiment provides such a system wherein a remainder of the trench is left empty.
[0015] One embodiment provides a method for photonic blocking of at least a portion of a backside illuminated sensor, the method comprising : disposing a trench extending from a first surface of a substrate upon which the sensor is disposed, to a doping gradient disposed proximate to the sensor; providing a bottom of the trench having a geometry substantially coincident with the shape of the portion; and filling at least the bottom of the trench with an optically opaque material.
[0016] Another embodiment provides such a method wherein the optically opaque material is a metal.
[0017] A further embodiment provides such a method wherein the optically opaque material is an organic material filled with nanoparticles .
[0018] Yet another embodiment provides such a method wherein the optically opaque material is an organic material filled with an antireflective optical stack.
[0019] A yet further embodiment provides such a method wherein the trench is straight walled.
[0020] Still another embodiment provides such a method wherein the trench has a shaft narrower than the bottom, the shaft connecting the bottom to the surface of the substrate opposite to the storage node.
[0021] A still further embodiment provides such a method wherein walls of the trench are angled. [0022] One embodiment provides a camera, the camera comprising at least one backside illuminated sensor wherein a photonic block is disposed proximate to the storage node at a first end of a trench disposed in a substrate upon which the sensor is built.
[0023] The features and advantages described herein are not all- inclusive and, in particular, many additional features and advantages will be apparent to one of ordinary skill in the art in view of the drawings, specification, and claims. Moreover, it should be noted that the language used in the specification has been principally selected for readability and instructional purposes, and not to limit the scope of the inventive subj ect matter.
BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 is a block diagram illustrating a known front illuminated sensor.
[0025] Figure 2 is a block diagram illustrating a known backside illuminated sensor with a photonic block disposed on a backside of the substrate.
[0026] Figure 3 is a block diagram illustrating backside illuminated sensor configured according to one embodiment.
[0027] Figure 4 is a block diagram illustrating an array backside illuminated sensors having global shutter function and configured according to one embodiment.
[0028] Figure 5 is a flowchart illustrating a method for isolating a storage node configured according to one embodiment.
[0029] Figure 6 is a block diagram illustrating a camera comprising a backside illuminated sensor configured according to one embodiment of the disclosure. DETAILED DESCRIPTION
[0030] As illustrated in Fig. 3 and Fig. 4, one embodiment 10 provides a CMOS Image Sensor 20 that employs backside illumination (B SI) on a substrate 12. In such an embodiment, optical block 26 disposed in an intra-pixel trench 14 are disposed through the substrate 12. The trench 14 extends into the substrate 12. The trench 14 and is positioned within a pixel. The trench 14 is positioned so that one end is disposed proximate to a storage node 22 of the pixel, with a layer of doped region 24 disposed between the trench and the storage node. In some embodiments substantially all of the depth of the substrate 12 may be penetrated by the optical block 26 so that the deepest point is disposed proximate to the portion of the device which is sought to be protected, while in others the trench 14 only extends to an depth to block photons entering through the substrate 12 from reaching the storage node 22, without interfering with the processing of charge.
[0031] One embodiment provides an optical block 26 physically close to the storage node 22 by etching a trench 14 from the back surface 30 of the silicon substrate and filling the bottom of the trench 14 with an optical block 26 material. In one example the optical block 26 material is an optically opaque or absorptive material such as metal, such as Tungsten, organics that may be filled with nanoparticles or an antireflective optical stack structure. Absorptive materials of the optical block 26 may include but are not limited to polysilicon and similar materials. In those parts of the trench 14 not occupied by the block 26, the trench 14 may be empty or filled.
[0032] The trench 14 could be of various shapes, as illustrated in Fig. 4, for instance straight-walled 36, widening away 34 from the block 26 or t-shaped32. In the T-shaped trench 32 embodiment, a broad feature 28 near the storage node 22 is provided to accommodate the block 26. The trench 14 including the broad feature 28 should be deep enough to reach the doping gradient 24 that protects the storage node 22 from photo- carrier collection. [0033] Trenches 14 may be made through the plasma or chemical etching or combinations of the same or such other techniques as would be understood by those skilled in the art to allow for controlled removal of substrate 12 material in alignment with the storage node 22. In one embodiment, etches are completed after the completion of the structures disposed on the substrate 12, while one skilled in the art would foresee that trenches 14 extended prior to completion of the structures would also be within the scope of this disclosure.
[0034] In embodiments, the photonic isolation of storage nodes 22 is provided by a system comprising at least one storage node 22 disposed on a substrate 12 paired with a backside illuminated photonic sensor 20 and configured to receive data collected by the sensor 20 until read. At least one trench 14 is disposed in the substrate 12 of such embodiments , the trench 14 being aligned with the storage node 22. Such embodiments may also include a photonic block disposed in the trench 14 , proximate to the storage node 22, whereby photons are block from reaching at least a portion of the storage node 22.
[0035] In embodiments, the trench 14 may be straight walled.
[0036] In embodiments, the trench 14 has a broad area 28 disposed proximate to the storage node 22.
[0037] In embodiments, the trench 14 has a shaft narrower than the broad area, the shaft connecting the broad area to the surface of the substrate 12 opposite to the storage node 22.
[0038] In embodiments, the trench 14 extends from a surface of the substrate 12 opposite to the storage node 22 to a doping gradient 24 disposed around the storage node 22.
[0039] In embodiments, the trench 14 may be filled with an optically opaque material 26, which may be a metal, an organic material filled with nanoparticles, or an organic material filled with an antireflective optical stack. Alternatively, at least a portion of the trench 14 may be filled with a photo-absorptive material 26. In embodiments where the trench 14 is filled, such filling may be partial, with a remainder of the trench 14 left empty. [0040] In embodiments a method, as illustrated in Fig. 5 , for photonic blocking of at least a portion of a backside illuminated sensor involving disposing a trench extending from a first surface of a substrate upon which the sensor is disposed to a doping gradient disposed proximate to the sensor 40 , providing a bottom of the trench having a geometry substantially coincident with the shape of the portion 42, and filling at least the bottom of the trench with an optically opaque material is provided 44. In such embodiments, metal, an organic material filled with nanoparticles, or an organic material filled with an antireflective optical stack may serve as the optically opaque material.
[0041] Regarding the trench 14, in embodiments, the trench 14 is straight walled. In other embodiments, the trench 14 has a shaft portion that is narrower than the bottom, the shaft connecting the bottom to the surface of the substrate 12 opposite to the storage node 22. In other cases, the walls of the trench 14 are angled.
[0042] In an exemplary embodiment, as shown in Figure 6, a camera 50 is provided comprising a lens 52 and at least one backside illuminated sensor 10 wherein a photonic block as described in the disclosure which is disposed proximate to the storage node at a first end of a trench disposed in a substrate upon which the sensor is built.
[0043] The foregoing description of the embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of this disclosure. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto.

Claims

CLAIMS What is claimed is :
1 . A system for photonic isolation of storage nodes for an imaging sensor within a pixel, the system comprising :
At least one storage node disposed on a substrate paired with a backside illuminated photonic sensor within said pixel and configured to receive data collected by said sensor until read;
At least one trench disposed in said substrate, said trench being aligned with said storage node ;
A photonic block, disposed in said trench, proximate to said storage node and blocking photons to at least a portion of said storage node.
2. The system of claim 1 wherein said trench is straight walled.
3. The system of claim 1 wherein said trench has a broad area dispo sed proximate to said storage node.
4. The system of claim 3 wherein said trench has a shaft narrower than said broad area, said shaft connecting said broad area to the surface of the substrate opposite to said storage node.
5. The system of claim 1 wherein said trench extends from a surface of the substrate oppo site to said storage node to a doping gradient dispo sed around said storage node .
6. The system of claim 1 wherein at least a portion of said trench is filled with an optically opaque material.
7. The system of claim 6 wherein said optically opaque material is a metal.
8. The system of claim 6 wherein said optically opaque material is an organic material filled with nanoparticles .
9. The system of claim 6 wherein said opaque material is an organic material filled with an antireflective optical stack.
10. The system of claim 1 wherein at least a portion of said trench is filled with a photo-absorptive material.
1 1 . The system of claim 6 wherein a remainder of said trench is left empty.
12. The system of claim 10 wherein a remainder of said trench is left empty.
13. A method for photonic blocking of at least a portion of a backside illuminated sensor, said method comprising :
Disposing a trench extending from a first surface of a substrate upon which said sensor is disposed, to a doping gradient disposed proximate to said sensor;
Providing a bottom of said trench having a geometry sub stantially coincident with the shape of said portion; and
Filling at least said bottom of said trench with an optically opaque material.
14. The method of claim 13 wherein said optically opaque material is a metal.
15. The method of claim 13 wherein said optically opaque material is an organic material filled with nanoparticles .
16. The method of claim 13 wherein said optically opaque material is an organic material filled with an antireflective optical stack.
17. The method of claim 13 wherein said trench is straight walled.
18. The method of claim 10 wherein said trench has a shaft narrower than said bottom, said shaft connecting said bottom to the surface of the substrate opposite to said storage node .
19. The method of claim 10 wherein walls of said trench are angled.
20. A camera, said camera comprising at least one backside illuminated sensor wherein a photonic block is disposed proximate to said storage node at a first end of a trench dispo sed in a substrate upon which said sensor is built.
PCT/US2017/059242 2016-11-03 2017-10-31 Backside illuminated global shutter cmos image sensor WO2018085250A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201615342253A 2016-11-03 2016-11-03
US15/342,253 2016-11-03

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150263054A1 (en) * 2014-03-14 2015-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation with air-gap in backside illumination image sensor chips
US20160118438A1 (en) * 2014-10-27 2016-04-28 Omnivision Technologies, Inc. Isolated global shutter pixel storage structure
US20160204150A1 (en) * 2015-01-08 2016-07-14 Min-Seok Oh Image sensor
US20170005121A1 (en) * 2015-06-30 2017-01-05 Semiconductor Components Industries, Llc Image sensors with backside trench structures
US20170117309A1 (en) * 2015-10-27 2017-04-27 Taiwan Semiconductor Manufacturing Co., Ltd. Extra doped region for back-side deep trench isolation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150263054A1 (en) * 2014-03-14 2015-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench isolation with air-gap in backside illumination image sensor chips
US20160118438A1 (en) * 2014-10-27 2016-04-28 Omnivision Technologies, Inc. Isolated global shutter pixel storage structure
US20160204150A1 (en) * 2015-01-08 2016-07-14 Min-Seok Oh Image sensor
US20170005121A1 (en) * 2015-06-30 2017-01-05 Semiconductor Components Industries, Llc Image sensors with backside trench structures
US20170117309A1 (en) * 2015-10-27 2017-04-27 Taiwan Semiconductor Manufacturing Co., Ltd. Extra doped region for back-side deep trench isolation

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