WO2018084398A1 - Redresseur capable de prévenir une surcharge par l'intermédiaire d'une commande de commutation séquentielle - Google Patents

Redresseur capable de prévenir une surcharge par l'intermédiaire d'une commande de commutation séquentielle Download PDF

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Publication number
WO2018084398A1
WO2018084398A1 PCT/KR2017/005191 KR2017005191W WO2018084398A1 WO 2018084398 A1 WO2018084398 A1 WO 2018084398A1 KR 2017005191 W KR2017005191 W KR 2017005191W WO 2018084398 A1 WO2018084398 A1 WO 2018084398A1
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WIPO (PCT)
Prior art keywords
switching transistor
switching
switching transistors
parallel
turn
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PCT/KR2017/005191
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English (en)
Korean (ko)
Inventor
김용우
손철호
김훈태
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(주)성진아이엘
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Publication of WO2018084398A1 publication Critical patent/WO2018084398A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/162—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
    • H02M7/1623—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration with control circuit
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/02—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from ac mains by converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02M7/162—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J2207/00—Indexing scheme relating to details of circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J2207/20—Charging or discharging characterised by the power electronics converter

Definitions

  • the present invention relates to techniques for rectifiers that convert an input alternating current signal to a direct current signal by configuring a plurality of switching transistors in a full bridge circuit.
  • Such wireless charging techniques include a wireless charging technique according to electromagnetic induction and a wireless charging technique according to magnetic resonance. Both the wireless charging technique based on electromagnetic induction and the wireless charging technique based on magnetic resonance use non-radial attenuated alternating current signals around the coil in the near field. That is, a method of charging a battery without a contact terminal by using an inductive coupling between a primary coil of a wireless charging power transmitter and a secondary coil of a wireless charging power receiver is introduced.
  • the wireless charging power receiver receives the AC power charging power from the wireless charging power transmitter, the AC voltage applied to the charging power receiver is rectified to the DC voltage through the rectifier and supplied to the battery using the DC voltage.
  • the AC voltage applied to the charging power receiver is rectified to the DC voltage through the rectifier and supplied to the battery using the DC voltage.
  • a rectifier including a plurality of switching transistors as a full bridge circuit is used to convert an input AC signal received by the wireless charging power receiver into a DC signal.
  • the rectifier may include a plurality of switching transistors 111, 112, 113, and 114 as a full bridge circuit.
  • the switching transistor may be a switching device that can control the on / off by applying a signal to a gate, such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • the switching transistor 1111 and the switching transistor 3113 are turned on so that the switching transistor 1111 and the switching transistor 3113 are in a conductive state.
  • the DC voltage VDC is output from the output terminal, and the switching transistor 2112 and the switching transistor 4 114 are turned on in a period in which the input AC signal is input in the ⁇ direction to turn on the switching transistor 2 112.
  • the switching transistor 4 114 may be in a conductive state so that the DC voltage VDC is output at the output terminal.
  • the switching transistor 2 112 and the switching transistor 4 114 are turned off when the input AC signal is in the + direction, and the switching transistor 1 111 and the switching transistor 3 when the input AC signal is in the ⁇ direction.
  • a DC voltage is appropriately output at the output terminal.
  • the rectifier illustrated in FIG. 1 needs to appropriately control turn-on or turn-off of the plurality of switching transistors 111, 112, 113, and 114 according to a change in the direction of the input AC signal.
  • the plurality of switching transistors 111, 112 By sensing the potential difference between the drain and the source of each of the switching transistors 111, 112, 113, and 114 to sense a change in the direction of the AC signal, the plurality of switching transistors 111, 112, By applying a pulse signal to a gate of each of the switching transistors 111, 112, 113, and 114 according to a potential difference between each of the drain and the source, the plurality of switching transistors 111, 112, 113, 114 is configured to control the turn on or turn off.
  • the source potential of the switching transistor 1111 and the switching transistor 3113 is higher than that of the drain, and the switching transistor 2112 and the switching transistor 4 ( Since the potential of the drain is higher than that of the source at 114, the potential difference between the drain and the source is sensed as having a negative value in the switching transistor 1111 and the switching transistor 3113, and the switching transistor 2112.
  • a high pulse signal is applied to the gates of the switching transistor 1111 and the switching transistor 3113 to switch the transistor. 1 (111) and switching transistor 3 (113) are turned on and low on the gates of switching transistor 2 (112) and switching transistor 4 (114). Applying the scan signal and may be turned off the switching transistor 2, 112 and the switching transistor 4 114.
  • the potential of the source is higher than that of the drain in the switching transistors 2 112 and 4 114, and the switching transistors 1 111 and 3 ( Since the potential of the drain is higher than that of the source at 113, the potential difference between the drain and the source is sensed as having a negative value in switching transistor 2112 and switching transistor 4114, and switching transistor 1111.
  • a high pulse signal is applied to the gates of the switching transistor 2112 and the switching transistor 4114 to switch the switching transistor 2112.
  • the switching transistor 4 114 are turned on, and a low pulse signal is applied to the gates of the switching transistor 1 111 and the switching transistor 3 113. Applied to it is possible to turn off the first switching transistor 111 and the third switching transistor 113.
  • the voltage VDS between the drain and the source of the switching transistor may be higher than the voltage in the normal operating range as shown by reference numeral 210 of FIG. 2 during the discharge of the switching transistor.
  • the plurality of switching transistors 111, 112, 113, and 114 are configured as full bridge circuits to turn on and off the plurality of switching transistors 111, 112, 113, and 114.
  • the controlling rectifier may cause an overload of the rectifier circuit due to a leakage current and a voltage rise resulting from turning on or turning off the plurality of switching transistors 111, 112, 113, and 114. It acts as a factor that causes frequent breakdowns.
  • the plurality of switching transistors 111, 112, 113, and 114 may be used. There is a need for a technique to prevent the overload of the entire rectifier circuit from being overloaded by minimizing the leakage current and the resulting voltage rise during turn-on and turn-off.
  • the rectifier according to the present invention configures a plurality of switching transistor groups formed by connecting two or more switching transistors in parallel to a full bridge circuit, whereby the two or more switching transistor groups connected in parallel in the plurality of switching transistor groups.
  • the rectifier converting an AC signal into a DC signal includes: a sensing unit configured to sense a potential difference between a drain and a source of each of the plurality of switching transistor groups that change in response to a change in the direction of the input AC signal; A gate of each of the two or more switching transistors connected in parallel in the plurality of switching transistor groups based on a sensing value of a potential difference between a drain and a source of each of the plurality of switching transistor groups. Pulse signals are sequentially applied at predetermined time intervals.
  • a switch control unit for controlling the turn-on order (turn on) and turn-off (turn off) for each of the two or more switching transistors that are connected in parallel in the plurality of the switching transistor group.
  • the rectifier according to the present invention configures a plurality of switching transistor groups formed by connecting two or more switching transistors in parallel to a full bridge circuit, whereby the two or more switching transistor groups connected in parallel in the plurality of switching transistor groups.
  • FIG. 1 is a diagram schematically illustrating a circuit structure of a conventional rectifier including a plurality of switching transistors as a full bridge circuit.
  • FIG. 2 is a graph illustrating an operating characteristic occurring when the switching transistor is turned on and turned off.
  • FIG 3 is a view showing the structure of a rectifier according to an embodiment of the present invention.
  • FIG. 4 is a diagram schematically illustrating a circuit structure of a rectifier according to an embodiment of the present invention.
  • FIG. 5 is a graph showing the operating characteristics of the rectifier according to an embodiment of the present invention.
  • FIG 3 is a view showing the structure of a rectifier according to an embodiment of the present invention.
  • the rectifier 310 may include a sensing unit 311, a switch controller 312, a required power measuring unit 315, and a driving number determining unit 316. have.
  • the rectifier 310 has a circuit structure in which a plurality of switching transistor groups 411, 412, 413, and 414 are configured as a full bridge circuit, as shown in FIG. 4.
  • the sensing unit 311, the switch control unit 312, the required power measurement unit 315, and the driving number determination unit 316 may be configured of a predetermined control module as shown at 410, and thus, a plurality of control modules may be provided. Configured to control each of the switching transistor groups 411, 412, 413, 414.
  • each of the plurality of switching transistor groups 411, 412, 413, and 414 refers to a circuit configured by connecting two or more switching transistors in parallel, as shown in FIG. 4.
  • the switching transistor refers to a switching device capable of controlling on / off by applying a signal to a gate, such as a metal oxide semiconductor field effect transistor (MOSFET).
  • MOSFET metal oxide semiconductor field effect transistor
  • the sensing unit 311 has a potential difference between a drain and a source for each of the plurality of switching transistor groups 411, 412, 413, and 414 that change in response to a change in the direction of the input AC signal. Sensing.
  • the potential difference between the drain and the source for each of the plurality of switching transistor groups 411, 412, 413, and 414 is two or more switchings included in each of the plurality of switching transistor groups 411, 412, 413, and 414.
  • the switch controller 312 is configured to generate the plurality of switching transistor groups 411, 412, 413, and 414 based on a sensing value of a potential difference between the drain and the source of each of the plurality of switching transistor groups 411, 412, 413, and 414.
  • a plurality of switching transistor groups 411, 412, 413, by applying pulse signals sequentially at predetermined time intervals to the gates of each of the two or more switching transistors connected in parallel within 414 controls sequential turn on and turn off for each of the two or more switching transistors connected in parallel in 414.
  • the sensing unit 311 may include a turn-on control signal generator 313.
  • the turn-on control signal generator 313 may include a first switching transistor group among the plurality of switching transistor groups 411, 412, 413, and 414 in response to a change in the direction of the input AC signal.
  • a first switching transistor group among the plurality of switching transistor groups 411, 412, 413, and 414 in response to a change in the direction of the input AC signal.
  • the switch controller 312 may generate a high pulse signal and then, for example, each of the two or more first switching transistors connected in parallel in the first switching transistor group.
  • the two or more first switching transistors may be sequentially turned on one by one by sequentially applying the high pulse signal to the gate at the predetermined time interval.
  • the sensing unit 311 may further include a turn-off control signal generator 314.
  • the turn-off control signal generator 314 has a potential difference between a drain and a source of the first switching transistor group among the plurality of switching transistor groups 411, 412, 413, and 414 in response to a change in the direction of the input AC signal. When it starts to sense with a positive value, it generates a turnoff control signal.
  • the switch controller 312 when the turn-off control signal is generated, the switch controller 312 generates a low pulse signal and each of the two or more first switching transistors connected in parallel in the first switching transistor group.
  • the two or more first switching transistors may be sequentially turned off one by one by sequentially applying the low pulse signals to the gates of the predetermined time intervals.
  • the required power measurement unit 315 is coupled to a power receiver (not shown) to the output terminal of the rectifier 310, the power is supplied to the power receiver through the rectifier 310 (In this case, when the two or more switching transistors connected in parallel in the plurality of switching transistor groups are all driven, the required power actually used in the power receiver may be measured.
  • the driving number determiner 316 refers to a table in which information on the number of driving of the switching transistors is recorded for each of different predetermined required power measurement ranges, and the number of driving of the switching transistors corresponding to the measured required power. Can be determined.
  • the switch control unit 312 is connected to each of the plurality of switching transistor groups 411, 412, 413, 414 in parallel in the plurality of switching transistor groups 411, 412, 413, 414.
  • the two or more switching transistors only as many switching transistors as the driving number of the determined switching transistor may maintain driving and stop driving of the remaining switching transistors.
  • the sensing unit 311 senses a potential difference between a drain and a source for each of the plurality of switching transistor groups 411, 412, 413, and 414. As a result, assume that the potential difference between the drain and the source of the switching transistor group 1 411 and the switching transistor group 3 413 is sensed as a negative value.
  • the turn-on control signal generator 313 may generate the turn-on control signal because the potential difference between the drain and the source of the switching transistor group 1 411 and the switching transistor group 3 413 is sensed as a negative value.
  • the switch controller 312 since the turn-on control signal is generated, the switch controller 312 generates a high pulse signal and then selects a time for each gate of two or more switching transistors connected in parallel in the switching transistor group 1 411. By applying the high pulse signals sequentially at intervals, two or more switching transistors connected in parallel in the switching transistor group 1 411 may be sequentially turned on one by one.
  • the switch controller 312 switches by sequentially applying the high pulse signal at the predetermined time interval to the gate of each of the two or more switching transistors connected in parallel in the switching transistor group 3 413.
  • Two or more switching transistors connected in parallel in the transistor group 3 413 may be sequentially turned on one by one.
  • the switch controller 312 may perform “1 ns” for each gate of two or more switching transistors connected in parallel in the switching transistor group 1 411.
  • the switch controller 312 may perform “1 ns” for each gate of two or more switching transistors connected in parallel in the switching transistor group 1 411.
  • two or more switching transistors connected in parallel in switching transistor group 1 411 can be sequentially turned on one by one, and in parallel in switching transistor group 3 413.
  • the high pulse signal at intervals of " 1 ns " to the gates of each of the two or more switching transistors connected to each other, the two or more switching transistors connected in parallel in the switching transistor group 3 413 one by one. It can be turned on.
  • the conventional The rectifier is composed of a single switching transistor as a full bridge circuit as shown in Figure 1, so that when one switching transistor is turned on, as shown by the reference numeral 210 of FIG.
  • the time points at which leakage current occurs can be distributed to each other. Overloading the 310 circuit can be minimized.
  • the capacitance of the switching transistors included in each of the switching transistor groups 411, 412, 413, and 414 is smaller than that of the switching transistor included in the rectifier using a single switching transistor as shown in FIG. 1.
  • the leakage current may be distributed by sequentially turning on the switching transistors included in each of the switching transistor groups 411, 412, 413, and 414.
  • the at least two switching transistors connected in parallel in switching transistor group 1 411 and two or more switching transistors connected in parallel in switching transistor group 3 413 are selected based on the turn-on control signal.
  • the sensing unit 311 drains each of the plurality of switching transistor groups 411, 412, 413, and 414 as the input AC signal enters a period having a negative direction.
  • the turn-off control signal generator 314 A turn off control signal may be generated.
  • the switch controller 312 since the turn-off control signal is generated, the switch controller 312 generates a low pulse signal and selects a gate of each of two or more switching transistors connected in parallel in the switching transistor group 1 411. By sequentially applying the low pulse signals at time intervals, two or more switching transistors connected in parallel in the switching transistor group 1 411 may be sequentially turned off one by one.
  • the switch controller 312 switches by sequentially applying the low pulse signal to the gate of each of the two or more switching transistors connected in parallel in the switching transistor group 3 413 at the predetermined time interval.
  • Two or more switching transistors connected in parallel in the transistor group 3 413 may be sequentially turned off one by one.
  • the switch controller 312 may be configured to include a plurality of switching transistors each connected in parallel in the switching transistor group 1 411.
  • the switch controller 312 may be configured to include a plurality of switching transistors each connected in parallel in the switching transistor group 1 411.
  • two or more switching transistors connected in parallel in switching transistor group 1 411 may be sequentially turned off one by one, and switching transistor group 3
  • Two low-voltage signals are sequentially connected in switching transistor group 3 (413) by applying the low pulse signals sequentially at " 1 ns " intervals to the gates of each of the two or more switching transistors connected in parallel within 413.
  • FIG. The above switching transistors may be sequentially turned off one by one.
  • the rectifier of FIG. 1 configures the single switching transistors as a full bridge circuit as shown in FIG. 1, when one switching transistor is turned off, as shown by reference numeral 210 of FIG. 2, the leakage current is large at a time.
  • the time at which leakage current occurs is distributed to each other. The overload in the rectifier 310 circuit can be minimized.
  • the capacitance of the switching transistors included in each of the switching transistor groups 411, 412, 413, and 414 is smaller than that of the switching transistor included in the rectifier using a single switching transistor as shown in FIG. 1.
  • the leakage current may be distributed by sequentially turning off the switching transistors included in each of the switching transistor groups 411, 412, 413, and 414.
  • FIG. 5 a graph of an operating characteristic when two or more switching transistors included in a specific switching transistor group among the plurality of switching transistor groups 411, 412, 413, and 414 are sequentially turned off one by one is shown. It is.
  • the necessary power measurement unit 315 may be used. The required power actually used in the power receiving device can be measured.
  • the state in which the power receiver is coupled to the output terminal of the rectifier 310 to supply power may include the two or more switching transistors connected in parallel in a plurality of switching transistor groups 411, 412, 413, and 414. They are all driven while being sequentially turned on or off.
  • the driving number determiner 316 measures the measurement by referring to a table in which information on the number of driving of the switching transistors is recorded for each of different predetermined required power measurement value ranges. The driving number of the switching transistor corresponding to the required power can be determined.
  • the table may record information as shown in Table 1 below.
  • the driving number determination unit 316 refers to the table as shown in Table 1 above, and sets the number of driving transistors to "two". Can be determined.
  • the switch control unit 312 is connected to each of the plurality of switching transistor groups 411, 412, 413, 414 in parallel in the plurality of switching transistor groups 411, 412, 413, 414.
  • the switch control unit 312 is connected to each of the plurality of switching transistor groups 411, 412, 413, 414 in parallel in the plurality of switching transistor groups 411, 412, 413, 414.
  • only "two" switching transistors, which are driving numbers of the determined switching transistors, may maintain driving and stop driving of the remaining switching transistors.
  • the switch controller 312 maintains driving only two switching transistors among the two or more switching transistors included in the switching transistor group 1 411 that are currently all driven with respect to the switching transistor group 1 411, and the other switching is performed.
  • the driving of the transistors may be stopped, and only two of the two or more switching transistors included in the switching transistor group 2 412 which are currently being driven for the switching transistor group 2 412 remain, Two or more switching transistors included in the switching transistor group 3 413 and the switching transistor group 4 414 for the switching transistor group 3 413 and the switching transistor group 4 414. Only two of the switching transistors keep driving The driving of the remaining switching transistors can be stopped.
  • the rectifier 310 may determine the number of driving of each switching transistor included in the plurality of switching transistor groups 411, 412, 413, and 414 according to the actual power required of the power consumption device coupled to the output terminal. By adjusting, the power consumption due to the driving of the rectifier 310 can be reduced.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

L'invention concerne un redresseur capable de prévenir une surcharge par l'intermédiaire d'une commande de commutation séquentielle. Le redresseur selon la présente invention comprend un circuit en pont complet formé par une pluralité de groupes de transistors de commutation, chacun de ceux-ci étant formé par la connexion en parallèle de deux transistors de commutation ou plus, et commande ainsi séquentiellement la mise sous tension et hors tension des deux transistors de commutation ou plus, connectés en parallèle, au sein de la pluralité des groupes de transistors de commutation. Par conséquent, la présente invention permet de minimaliser un courant de fuite généré dans le redresseur ainsi que l'augmentation de tension provoquée par ce courant.
PCT/KR2017/005191 2016-11-04 2017-05-18 Redresseur capable de prévenir une surcharge par l'intermédiaire d'une commande de commutation séquentielle WO2018084398A1 (fr)

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KR10-2016-0146511 2016-11-04
KR1020160146511A KR101837469B1 (ko) 2016-11-04 2016-11-04 순차 별 스위칭 제어를 통해 과부하의 방지가 가능한 정류기

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113258146A (zh) * 2021-03-29 2021-08-13 华为技术有限公司 一种电池系统、驱动系统及储能集装箱
WO2021218227A1 (fr) * 2020-04-30 2021-11-04 国家电网有限公司 Convertisseur commuté par condensateur modulaire et procédé

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Publication number Priority date Publication date Assignee Title
JPH0765987A (ja) * 1993-08-31 1995-03-10 Hitachi Medical Corp インバータ式ｘ線高電圧装置
JP2006050698A (ja) * 2004-08-02 2006-02-16 Origin Electric Co Ltd ブリッジ装置及びそれを用いた電源装置
JP2012157169A (ja) * 2011-01-26 2012-08-16 San Denshi Kogyo Kk 整流回路
US20130235635A1 (en) * 2010-11-19 2013-09-12 Rohm Co., Ltd. Switching rectifier circuit and battery charger using same
KR101650435B1 (ko) * 2015-03-30 2016-08-23 (주)성진아이엘 턴 오프 제어 방식이 개선된 정류기 및 상기 정류기의 제어 방법

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Publication number Priority date Publication date Assignee Title
DE102011006316A1 (de) 2011-03-29 2012-10-04 Robert Bosch Gmbh Verfahren zum Ansteuern eines Gleichrichters

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0765987A (ja) * 1993-08-31 1995-03-10 Hitachi Medical Corp インバータ式ｘ線高電圧装置
JP2006050698A (ja) * 2004-08-02 2006-02-16 Origin Electric Co Ltd ブリッジ装置及びそれを用いた電源装置
US20130235635A1 (en) * 2010-11-19 2013-09-12 Rohm Co., Ltd. Switching rectifier circuit and battery charger using same
JP2012157169A (ja) * 2011-01-26 2012-08-16 San Denshi Kogyo Kk 整流回路
KR101650435B1 (ko) * 2015-03-30 2016-08-23 (주)성진아이엘 턴 오프 제어 방식이 개선된 정류기 및 상기 정류기의 제어 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021218227A1 (fr) * 2020-04-30 2021-11-04 国家电网有限公司 Convertisseur commuté par condensateur modulaire et procédé
CN113258146A (zh) * 2021-03-29 2021-08-13 华为技术有限公司 一种电池系统、驱动系统及储能集装箱
CN113258146B (zh) * 2021-03-29 2022-12-30 华为数字能源技术有限公司 一种电池系统、驱动系统及储能集装箱

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