WO2018079485A1 - Elastic wave device - Google Patents
Elastic wave device Download PDFInfo
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- WO2018079485A1 WO2018079485A1 PCT/JP2017/038182 JP2017038182W WO2018079485A1 WO 2018079485 A1 WO2018079485 A1 WO 2018079485A1 JP 2017038182 W JP2017038182 W JP 2017038182W WO 2018079485 A1 WO2018079485 A1 WO 2018079485A1
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- acoustic wave
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- elastic wave
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- wave element
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Definitions
- the present invention relates to an acoustic wave device in which a surface acoustic wave element is sealed with resin.
- a surface acoustic wave element is mounted on a mounting substrate by face-down bonding.
- the periphery of the surface acoustic wave element is sealed with a sealing resin layer in a state where a space is secured between the IDT electrode forming surface of the surface acoustic wave element and the mounting surface.
- the sealing resin layer is in close contact with the periphery of the elastic wave element substrate. Therefore, an impact when the acoustic wave device is mounted on a printed circuit board or a stress at the time of forming a sealing resin layer at the time of manufacture is directly applied to the acoustic wave element substrate. Therefore, there is a risk that the elastic wave element substrate may be broken.
- An object of the present invention is to provide a highly reliable elastic wave device that is less prone to problems such as cracking of an elastic wave element substrate.
- An elastic wave device includes a mounting substrate, an elastic wave element substrate mounted on the mounting substrate and having first and second main surfaces and side surfaces facing each other, and the elastic wave element.
- a second main surface of the acoustic wave element substrate facing the mounting substrate at a predetermined interval, and in contact with the acoustic wave element substrate in the sealing resin layer A gap is provided.
- the gap is in contact with the first main surface of the acoustic wave element substrate.
- the gap is in contact with the side surface of the acoustic wave element substrate.
- the gap portion is in contact with one of the side surfaces of the acoustic wave element substrate and the side surface opposite to the side surface. It consists of a void part.
- the stress applied in the direction connecting the pair of side surfaces facing each other can be effectively alleviated. Therefore, the crack of the acoustic wave element substrate due to the stress applied in this direction is less likely to occur.
- the surface acoustic wave element is bonded to the mounting substrate by a bump.
- the gap is not positioned so as to overlap the bump.
- the part is located. In this case, cracks and the like of the acoustic wave element substrate are more unlikely to occur at positions that do not overlap the bumps.
- the acoustic wave element substrate is a piezoelectric substrate.
- the acoustic wave element substrate includes a support substrate and a piezoelectric thin film laminated on the support substrate.
- the support substrate is a high-sonic support substrate
- the acoustic velocity of the bulk wave propagating through the high-sonic support substrate is an elastic wave propagating through the piezoelectric thin film. It is higher than the speed of sound.
- the elastic wave can be effectively confined in the piezoelectric thin film.
- the supporting substrate has a high sound velocity layer in which the sound velocity of the propagating bulk wave is higher than the sound velocity of the elastic wave propagating through the piezoelectric thin film, and the propagating bulk.
- the void portion in contact with the acoustic wave element substrate is provided in the sealing resin layer, problems such as cracking of the acoustic wave element substrate hardly occur. Therefore, the reliability of the acoustic wave device can be increased.
- FIG. 1 is a front sectional view of an acoustic wave device according to a first embodiment of the present invention.
- FIG. 2 is a front sectional view of a structure in which the acoustic wave device according to the first embodiment is further mounted on a substrate such as a printed circuit board and the periphery is resin-molded.
- FIG. 3 is a front sectional view of an acoustic wave device according to the second embodiment of the present invention.
- FIG. 4 is a front sectional view of an acoustic wave device according to a third embodiment of the present invention.
- FIG. 5 is a front sectional view of an acoustic wave device according to a fourth embodiment of the present invention.
- FIG. 6 is a front sectional view for explaining a modification of the acoustic wave element substrate used in the present invention.
- FIG. 7 is a front sectional view for explaining still another modification of the acoustic wave device substrate used in the present invention.
- FIG. 1 is a front sectional view of an acoustic wave device according to a first embodiment of the present invention.
- the acoustic wave device 1 includes a mounting substrate 2, a surface acoustic wave element 3, and a sealing resin layer 4.
- the mounting substrate 2 is not particularly limited, but is made of insulating ceramics such as alumina, Si, or the like.
- Mounting electrode lands 5 a and 5 b are provided on the mounting surface 2 a which is the upper surface of the mounting substrate 2.
- the electrode lands 5a and 5b are made of an appropriate metal or alloy.
- the surface acoustic wave element 3 has an acoustic wave element substrate 6.
- the acoustic wave element substrate 6 has first and second main surfaces 6a and 6b facing each other.
- a plurality of side surfaces 6c and 6d connect the first main surface 6a and the second main surface 6b.
- the side surface 6c and the side surface 6d face each other.
- the acoustic wave element substrate 6 is a piezoelectric substrate made of a piezoelectric single crystal such as LiTaO 3 or LiNbO 3 .
- the acoustic wave element substrate 6 may be formed of piezoelectric ceramics.
- An IDT electrode 7 and terminal electrodes 8a and 8b are provided on the second main surface 6b of the acoustic wave element substrate 6.
- the terminal electrodes 8a and 8b are electrically connected to the IDT electrode 7.
- the IDT electrode 7 and the terminal electrodes 8a and 8b are made of an appropriate metal or alloy.
- Bumps 9a and 9b made of metal are joined to the terminal electrodes 8a and 8b.
- the second main surface 6 b faces the mounting surface 2 a of the mounting substrate 2 at a predetermined interval. Thereby, a space A is provided.
- the sealing resin layer 4 is provided so as to seal the surface acoustic wave element 3 while securing the space A. In order to secure the space A, the sealing resin layer 4 does not reach the region between the bumps 9a and 9b.
- a gap 4 a that is in contact with the first main surface 6 a of the acoustic wave element substrate 6 is provided.
- the elastic wave element substrate 6 is hardly cracked.
- FIG. 2 is a front sectional view of a structure in which the acoustic wave device 1 according to the first embodiment is further mounted on a substrate such as a printed circuit board and the periphery is resin-molded.
- a structure in which the acoustic wave device 1 is mounted on a substrate 12 such as a printed circuit board and the periphery is sealed with the resin mold layer 13 is generally used.
- resin molding is performed with the resin mold layer 13
- a large stress is applied toward the elastic wave device 1 due to curing shrinkage of the resin or the like.
- the gap 4a is provided, the stress applied to the surface acoustic wave element substrate 6 of the surface acoustic wave element 3 can be relaxed. Therefore, the elastic wave element substrate 6 is not easily cracked due to stress in forming the resin mold layer 13.
- FIG. 3 is a front cross-sectional view of an acoustic wave device according to a second embodiment of the present invention.
- the gap 4b is provided so as to be in contact with the side surface 6c.
- the gap 4c is provided so as to contact the side surface 6d.
- the elastic wave device 21 is configured in the same manner as the elastic wave device 1 except that the sealing resin layer 4 has the gaps 4b and 4c. Therefore, about the same part, suppose that the description of 1st Embodiment is used by attaching
- the gaps 4b and 4c are provided so as to contact the side surface 6c on one side of the acoustic wave element substrate 6 and the side surface 6d opposite to the side surface 6c. Therefore, when stress is applied to the acoustic wave device 21 in the direction connecting the side surfaces 6c and 6d, the stress can be effectively relieved. Therefore, the elastic wave device 21 is also less likely to crack the elastic wave element substrate 6.
- the sealing resin layer may have a plurality of voids.
- FIG. 4 is a front sectional view of the acoustic wave device 31 according to the third embodiment.
- the sealing resin layer 4 has an elongated rectangular gap 4d when viewed from the front cross-section.
- the elastic wave device 31 is the same as the elastic wave device 1 except that the gap 4d has a different cross-sectional shape from the gap 4a. As shown in the gap 4d, in the present invention, the shape of the gap is not particularly limited, and can be various shapes.
- the gap 4a is provided at a position that does not overlap the bumps 9a and 9b. Thereby, it is possible to effectively relieve the stress to the bump non-formation portion where the stress is easily applied.
- FIG. 5 is a front sectional view of an acoustic wave device 41 according to a fourth embodiment of the present invention.
- the sealing resin layer 4 has a gap portion 4e in contact with the side surface 6c and a gap portion 4f in contact with the side surface 6d.
- the gap 4e is larger than the gap 4f.
- gap part 4e, 4f may differ.
- FIG. 6 is a front cross-sectional view for explaining a modification of the acoustic wave element substrate used in the present invention.
- a piezoelectric thin film 53 is laminated on a high sound velocity support substrate 52.
- An IDT electrode 7 is provided on the piezoelectric thin film 53.
- the acoustic velocity of the bulk wave propagating through the high acoustic velocity support substrate 52 is higher than the acoustic velocity of the elastic wave propagating through the piezoelectric thin film 53.
- the acoustic wave propagating through the piezoelectric thin film 53 can be effectively confined in the piezoelectric thin film 53 by using the high sound velocity supporting substrate 52 having such a sound speed as the supporting substrate.
- the high sound velocity layer 55 and the low sound velocity layer 56 may be laminated.
- the high sound velocity layer 55 is made of a material in which the sound velocity of the propagating bulk wave is higher than the sound velocity of the elastic wave propagating through the piezoelectric thin film 53.
- the low acoustic velocity layer 56 is made of a material in which the acoustic velocity of the propagating bulk wave is lower than that of the elastic wave propagating through the piezoelectric thin film 53.
- a plurality of high sound velocity layers 55 and low sound velocity layers 56 may be alternately laminated.
- the acoustic wave device according to the present invention is characterized by having a gap portion in contact with the acoustic wave element substrate in the sealing resin layer, and is therefore provided on the second main surface of the acoustic wave element substrate.
- the electrode structure is not particularly limited as long as it has an IDT electrode.
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Provided is an elastic wave device that has low susceptibility to defects such as cracking in an elastic wave element substrate, and has excellent reliability. An elastic wave device 1 has a surface acoustic wave element 3 mounted on a mounting substrate 2, and the surface acoustic wave element 3 is sealed by a sealing resin layer 4. A void 4a is provided in the sealing resin layer 4, the void being adjacent to an elastic wave element substrate 6.
Description
本発明は、弾性表面波素子が樹脂封止されている、弾性波装置に関する。
The present invention relates to an acoustic wave device in which a surface acoustic wave element is sealed with resin.
下記の特許文献１に記載の弾性波装置では、実装基板上に弾性表面波素子がフェイスダウンボンディングにより実装されている。弾性表面波素子のＩＤＴ電極形成面と、実装面との間に空間を確保した状態で、弾性表面波素子の周囲が封止樹脂層により封止されている。
In the elastic wave device described in Patent Document 1 below, a surface acoustic wave element is mounted on a mounting substrate by face-down bonding. The periphery of the surface acoustic wave element is sealed with a sealing resin layer in a state where a space is secured between the IDT electrode forming surface of the surface acoustic wave element and the mounting surface.
特許文献１に記載の弾性波装置では、封止樹脂層が、弾性波素子基板の周囲に密着している。そのため、弾性波装置をプリント回路基板などに実装する際の衝撃や、製造に際しての封止樹脂層形成時の応力が、弾性波素子基板に直接加わる。従って、弾性波素子基板が割れたりするという、不具合が生じるおそれがあった。
In the elastic wave device described in Patent Document 1, the sealing resin layer is in close contact with the periphery of the elastic wave element substrate. Therefore, an impact when the acoustic wave device is mounted on a printed circuit board or a stress at the time of forming a sealing resin layer at the time of manufacture is directly applied to the acoustic wave element substrate. Therefore, there is a risk that the elastic wave element substrate may be broken.
本発明の目的は、弾性波素子基板の割れ等の不具合が生じ難い、信頼性に優れた弾性波装置を提供することにある。
An object of the present invention is to provide a highly reliable elastic wave device that is less prone to problems such as cracking of an elastic wave element substrate.
本発明に係る弾性波装置は、実装基板と、前記実装基板上に実装されており、対向し合う第１及び第２の主面と、側面とを有する弾性波素子基板と、前記弾性波素子基板の前記第２の主面上に直接または間接に設けられたＩＤＴ電極とを有する弾性表面波素子と、前記弾性表面波素子を封止するように前記実装基板上に設けられた封止樹脂層と、を備え、前記弾性波素子基板の前記第２の主面が所定間隔を隔てて前記実装基板に対向しており、前記封止樹脂層内に、前記弾性波素子基板に接している空隙部が設けられている。
An elastic wave device according to the present invention includes a mounting substrate, an elastic wave element substrate mounted on the mounting substrate and having first and second main surfaces and side surfaces facing each other, and the elastic wave element. A surface acoustic wave element having an IDT electrode provided directly or indirectly on the second main surface of the substrate, and a sealing resin provided on the mounting substrate so as to seal the surface acoustic wave element A second main surface of the acoustic wave element substrate facing the mounting substrate at a predetermined interval, and in contact with the acoustic wave element substrate in the sealing resin layer A gap is provided.
本発明に係る弾性波装置のある特定の局面では、前記空隙部が、前記弾性波素子基板の前記第１の主面に接している。
In a specific aspect of the acoustic wave device according to the present invention, the gap is in contact with the first main surface of the acoustic wave element substrate.
本発明に係る弾性波装置の他の特定の局面では、前記空隙部が、前記弾性波素子基板の前記側面に接している。
In another specific aspect of the acoustic wave device according to the present invention, the gap is in contact with the side surface of the acoustic wave element substrate.
本発明に係る弾性波装置のさらに他の特定の局面では、前記空隙部が、前記弾性波素子基板の一方の前記側面に接している空隙部と、該側面とは反対側の前記側面に接している空隙部とからなる。この場合には、対向し合っている一対の側面を結ぶ方向に加わる応力を、効果的に緩和することができる。従って、この方向に加わった応力による弾性波素子基板の割れ等がより一層生じ難い。
In still another specific aspect of the acoustic wave device according to the present invention, the gap portion is in contact with one of the side surfaces of the acoustic wave element substrate and the side surface opposite to the side surface. It consists of a void part. In this case, the stress applied in the direction connecting the pair of side surfaces facing each other can be effectively alleviated. Therefore, the crack of the acoustic wave element substrate due to the stress applied in this direction is less likely to occur.
本発明に係る弾性波装置のさらに他の特定の局面では、前記弾性表面波素子が、前記実装基板にバンプにより接合されている。
In still another specific aspect of the acoustic wave device according to the present invention, the surface acoustic wave element is bonded to the mounting substrate by a bump.
本発明に係る弾性波装置の別の特定の局面では、前記実装基板上に実装された前記弾性表面波素子及び前記封止樹脂層を平面視した場合、前記バンプと重ならない位置に、前記空隙部が位置している。この場合には、バンプと重ならない位置において、弾性波素子基板の割れ等がより一層生じ難い。
In another specific aspect of the acoustic wave device according to the present invention, when the surface acoustic wave element and the sealing resin layer mounted on the mounting substrate are viewed in a plan view, the gap is not positioned so as to overlap the bump. The part is located. In this case, cracks and the like of the acoustic wave element substrate are more unlikely to occur at positions that do not overlap the bumps.
本発明に係る弾性波装置のさらに他の特定の局面では、前記弾性波素子基板が、圧電基板である。
In yet another specific aspect of the acoustic wave device according to the present invention, the acoustic wave element substrate is a piezoelectric substrate.
本発明に係る弾性波装置のさらに他の特定の局面では、前記弾性波素子基板が、支持基板と、前記支持基板上に積層された圧電薄膜とを有する。
In still another specific aspect of the acoustic wave device according to the present invention, the acoustic wave element substrate includes a support substrate and a piezoelectric thin film laminated on the support substrate.
本発明に係る弾性波装置の別の特定の局面では、前記支持基板が、高音速支持基板であり、前記高音速支持基板を伝搬するバルク波の音速が、前記圧電薄膜を伝搬する弾性波の音速よりも高い。この場合には、弾性波を圧電薄膜内に効果的に閉じ込めることができる。
In another specific aspect of the elastic wave device according to the present invention, the support substrate is a high-sonic support substrate, and the acoustic velocity of the bulk wave propagating through the high-sonic support substrate is an elastic wave propagating through the piezoelectric thin film. It is higher than the speed of sound. In this case, the elastic wave can be effectively confined in the piezoelectric thin film.
本発明に係る弾性波装置のさらに他の特定の局面では、前記支持基板が、伝搬するバルク波の音速が、前記圧電薄膜を伝搬する弾性波の音速よりも高い高音速層と、伝搬するバルク波の音速が、前記圧電薄膜を伝搬する前記弾性波の音速よりも低い、低音速層とを有する。この場合においても、圧電薄膜内に弾性波を効果的に閉じ込めることができる。
In still another specific aspect of the elastic wave device according to the present invention, the supporting substrate has a high sound velocity layer in which the sound velocity of the propagating bulk wave is higher than the sound velocity of the elastic wave propagating through the piezoelectric thin film, and the propagating bulk. A low sound velocity layer in which the sound velocity of the wave is lower than the sound velocity of the elastic wave propagating through the piezoelectric thin film. Even in this case, the elastic wave can be effectively confined in the piezoelectric thin film.
本発明に係る弾性波装置では、封止樹脂層内に、弾性波素子基板に接している空隙部が設けられているため、弾性波素子基板の割れのような不具合が生じ難い。よって、弾性波装置の信頼性を高めることができる。
In the acoustic wave device according to the present invention, since the void portion in contact with the acoustic wave element substrate is provided in the sealing resin layer, problems such as cracking of the acoustic wave element substrate hardly occur. Therefore, the reliability of the acoustic wave device can be increased.
以下、図面を参照しつつ、本発明の具体的な実施形態を説明することにより、本発明を明らかにする。
Hereinafter, the present invention will be clarified by describing specific embodiments of the present invention with reference to the drawings.
なお、本明細書に記載の各実施形態は、例示的なものであり、異なる実施形態間において、構成の部分的な置換または組み合わせが可能であることを指摘しておく。
It should be pointed out that each embodiment described in this specification is an example, and a partial replacement or combination of configurations is possible between different embodiments.
図１は、本発明の第１の実施形態に係る弾性波装置の正面断面図である。
FIG. 1 is a front sectional view of an acoustic wave device according to a first embodiment of the present invention.
弾性波装置１は、実装基板２と、弾性表面波素子３と、封止樹脂層４とを有する。
The acoustic wave device 1 includes a mounting substrate 2, a surface acoustic wave element 3, and a sealing resin layer 4.
実装基板２は、特に限定されるわけではないが、アルミナなどの絶縁性セラミックスや、Ｓｉなどからなる。
The mounting substrate 2 is not particularly limited, but is made of insulating ceramics such as alumina, Si, or the like.
実装基板２の上面である実装面２ａには、実装用の電極ランド５ａ，５ｂが設けられている。電極ランド５ａ，５ｂは適宜の金属もしくは合金からなる。
Mounting electrode lands 5 a and 5 b are provided on the mounting surface 2 a which is the upper surface of the mounting substrate 2. The electrode lands 5a and 5b are made of an appropriate metal or alloy.
弾性表面波素子３は、弾性波素子基板６を有する。弾性波素子基板６は、対向し合う第１，第２の主面６ａ，６ｂを有する。第１の主面６ａと第２の主面６ｂとを、複数の側面６ｃ，６ｄが結んでいる。側面６ｃと側面６ｄとは対向し合っている。
The surface acoustic wave element 3 has an acoustic wave element substrate 6. The acoustic wave element substrate 6 has first and second main surfaces 6a and 6b facing each other. A plurality of side surfaces 6c and 6d connect the first main surface 6a and the second main surface 6b. The side surface 6c and the side surface 6d face each other.
弾性波素子基板６は、本実施形態では、ＬｉＴａＯ３、ＬｉＮｂＯ３などの圧電単結晶からなる圧電基板である。弾性波素子基板６は、圧電セラミックスにより形成されていてもよい。
In this embodiment, the acoustic wave element substrate 6 is a piezoelectric substrate made of a piezoelectric single crystal such as LiTaO 3 or LiNbO 3 . The acoustic wave element substrate 6 may be formed of piezoelectric ceramics.
弾性波素子基板６の第２の主面６ｂ上には、ＩＤＴ電極７及び端子電極８ａ，８ｂが設けられている。端子電極８ａ，８ｂは、ＩＤＴ電極７に電気的に接続されている。ＩＤＴ電極７及び端子電極８ａ，８ｂは適宜の金属もしくは合金からなる。端子電極８ａ，８ｂに金属からなるバンプ９ａ，９ｂが接合されている。弾性表面波素子３においては、第２の主面６ｂが、実装基板２の実装面２ａと所定間隔を隔てて対向している。それによって、空間Ａが設けられている。
An IDT electrode 7 and terminal electrodes 8a and 8b are provided on the second main surface 6b of the acoustic wave element substrate 6. The terminal electrodes 8a and 8b are electrically connected to the IDT electrode 7. The IDT electrode 7 and the terminal electrodes 8a and 8b are made of an appropriate metal or alloy. Bumps 9a and 9b made of metal are joined to the terminal electrodes 8a and 8b. In the surface acoustic wave element 3, the second main surface 6 b faces the mounting surface 2 a of the mounting substrate 2 at a predetermined interval. Thereby, a space A is provided.
封止樹脂層４は、上記空間Ａを確保しつつ、弾性表面波素子３を封止するように設けられている。上記空間Ａを確保するために、封止樹脂層４は、バンプ９ａ，９ｂの間の領域には至っていない。
The sealing resin layer 4 is provided so as to seal the surface acoustic wave element 3 while securing the space A. In order to secure the space A, the sealing resin layer 4 does not reach the region between the bumps 9a and 9b.
他方、封止樹脂層４内には、弾性波素子基板６の第１の主面６ａに接している空隙部４ａが設けられている。本実施形態の弾性波装置１では、空隙部４ａが設けられているため、弾性波素子基板６の割れ等が生じ難い。
On the other hand, in the sealing resin layer 4, a gap 4 a that is in contact with the first main surface 6 a of the acoustic wave element substrate 6 is provided. In the elastic wave device 1 of the present embodiment, since the gap 4a is provided, the elastic wave element substrate 6 is hardly cracked.
すなわち、例えば、破線で示す吸着ヘッド１１を用いて、弾性波装置１をプリント回路基板などに実装する場合、矢印Ｂで示す方向に応力が加わる。すなわち、弾性波装置１の封止樹脂層４に、矢印Ｂで示す方向の応力が加わる。しかしながら、空隙部４ａが設けられているため、上記応力を緩和することができる。そのため、上記応力による弾性波素子基板６の割れ等が生じ難い。
That is, for example, when the acoustic wave device 1 is mounted on a printed circuit board or the like using the suction head 11 indicated by a broken line, stress is applied in the direction indicated by the arrow B. That is, stress in the direction indicated by the arrow B is applied to the sealing resin layer 4 of the acoustic wave device 1. However, since the gap 4a is provided, the stress can be relaxed. Therefore, the elastic wave element substrate 6 is hardly cracked by the stress.
図２は、第１の実施形態の弾性波装置１を、さらにプリント回路基板などの基板上に実装し、周囲を樹脂モールドした構造の正面断面図である。
FIG. 2 is a front sectional view of a structure in which the acoustic wave device 1 according to the first embodiment is further mounted on a substrate such as a printed circuit board and the periphery is resin-molded.
このように、弾性波装置１をプリント回路基板などの基板１２上に実装し、さらに周囲を樹脂モールド層１３により封止する構造も一般的に用いられている。樹脂モールド層１３により樹脂モールドする際にも、樹脂の硬化収縮などにより大きな応力が弾性波装置１側に向かって加わる。この場合においても、空隙部４ａが設けられているため、弾性表面波素子３の弾性波素子基板６に加わる応力を緩和することができる。従って、樹脂モールド層１３の形成に際しての応力による、弾性波素子基板６の割れ等も生じ難い。
Thus, a structure in which the acoustic wave device 1 is mounted on a substrate 12 such as a printed circuit board and the periphery is sealed with the resin mold layer 13 is generally used. When resin molding is performed with the resin mold layer 13, a large stress is applied toward the elastic wave device 1 due to curing shrinkage of the resin or the like. Even in this case, since the gap 4a is provided, the stress applied to the surface acoustic wave element substrate 6 of the surface acoustic wave element 3 can be relaxed. Therefore, the elastic wave element substrate 6 is not easily cracked due to stress in forming the resin mold layer 13.
図３は、本発明の第２の実施形態に係る弾性波装置の正面断面図である。第２の実施形態の弾性波装置２１では、空隙部４ｂが、側面６ｃに接するように設けられている。また、空隙部４ｃが、側面６ｄに接するように設けられている。弾性波装置２１は、封止樹脂層４が、上記空隙部４ｂ，４ｃを有することを除いては、弾性波装置１と同様に構成されている。従って、同一部分については、同一の参照番号を付することにより、第１の実施形態の説明を援用することとする。
FIG. 3 is a front cross-sectional view of an acoustic wave device according to a second embodiment of the present invention. In the elastic wave device 21 of the second embodiment, the gap 4b is provided so as to be in contact with the side surface 6c. The gap 4c is provided so as to contact the side surface 6d. The elastic wave device 21 is configured in the same manner as the elastic wave device 1 except that the sealing resin layer 4 has the gaps 4b and 4c. Therefore, about the same part, suppose that the description of 1st Embodiment is used by attaching | subjecting the same reference number.
弾性波装置２１では、弾性波素子基板６の一方側の側面６ｃと、側面６ｃとは反対側の側面６ｄとに接するように、空隙部４ｂ，４ｃが設けられている。そのため、側面６ｃ，６ｄを結ぶ方向において、弾性波装置２１に応力が加わった場合、この応力を効果的に緩和することができる。従って、弾性波装置２１においても、弾性波素子基板６の割れ等が生じ難い。弾性波装置２１のように、本発明においては、封止樹脂層は、複数の空隙部を有していてもよい。
In the acoustic wave device 21, the gaps 4b and 4c are provided so as to contact the side surface 6c on one side of the acoustic wave element substrate 6 and the side surface 6d opposite to the side surface 6c. Therefore, when stress is applied to the acoustic wave device 21 in the direction connecting the side surfaces 6c and 6d, the stress can be effectively relieved. Therefore, the elastic wave device 21 is also less likely to crack the elastic wave element substrate 6. Like the elastic wave device 21, in the present invention, the sealing resin layer may have a plurality of voids.
図４は、第３の実施形態に係る弾性波装置３１の正面断面図である。第３の実施形態の弾性波装置３１では、正面断面視した場合、封止樹脂層４が、細長い矩形の空隙部４ｄを有する。
FIG. 4 is a front sectional view of the acoustic wave device 31 according to the third embodiment. In the elastic wave device 31 of the third embodiment, the sealing resin layer 4 has an elongated rectangular gap 4d when viewed from the front cross-section.
空隙部４ｄが空隙部４ａと異なる断面形状を有することを除いては、弾性波装置３１は弾性波装置１と同様である。空隙部４ｄに示すように、本発明において、空隙部の形状は特に限定されず、様々な形状とすることができる。
The elastic wave device 31 is the same as the elastic wave device 1 except that the gap 4d has a different cross-sectional shape from the gap 4a. As shown in the gap 4d, in the present invention, the shape of the gap is not particularly limited, and can be various shapes.
また、好ましくは、弾性波装置１のように、弾性波装置１を平面視した場合、バンプ９ａ，９ｂと重ならない位置に、空隙部４ａが設けられていることが望ましい。それによって、応力が加わりやすいバンプ非形成箇所への応力を効果的に緩和することができる。
Also, preferably, like the elastic wave device 1, when the elastic wave device 1 is viewed in plan, it is desirable that the gap 4a is provided at a position that does not overlap the bumps 9a and 9b. Thereby, it is possible to effectively relieve the stress to the bump non-formation portion where the stress is easily applied.
図５は、本発明の第４の実施形態に係る弾性波装置４１の正面断面図である。弾性波装置４１では、封止樹脂層４が、側面６ｃに接している空隙部４ｅと、側面６ｄに接触している空隙部４ｆとを有する。空隙部４ｅが、空隙部４ｆよりも大きくなっている。このように、複数の空隙部４ｅ，４ｆが設けられている場合、複数の空隙部４ｅ，４ｆの大きさが異なっていてもよい。
FIG. 5 is a front sectional view of an acoustic wave device 41 according to a fourth embodiment of the present invention. In the acoustic wave device 41, the sealing resin layer 4 has a gap portion 4e in contact with the side surface 6c and a gap portion 4f in contact with the side surface 6d. The gap 4e is larger than the gap 4f. Thus, when the several space | gap part 4e, 4f is provided, the magnitude | size of the several space | gap part 4e, 4f may differ.
図６は、本発明で用いられる弾性波素子基板の変形例を説明するための正面断面図である。図６に示す弾性波素子基板５１では、高音速支持基板５２上に、圧電薄膜５３が積層されている。圧電薄膜５３上にＩＤＴ電極７が設けられている。高音速支持基板５２を伝搬するバルク波の音速は、圧電薄膜５３を伝搬する弾性波の音速よりも高い。このような音速関係の高音速支持基板５２を支持基板として用いることにより、圧電薄膜５３を伝搬する弾性波を圧電薄膜５３内に効果的に閉じ込めることができる。
FIG. 6 is a front cross-sectional view for explaining a modification of the acoustic wave element substrate used in the present invention. In the acoustic wave element substrate 51 shown in FIG. 6, a piezoelectric thin film 53 is laminated on a high sound velocity support substrate 52. An IDT electrode 7 is provided on the piezoelectric thin film 53. The acoustic velocity of the bulk wave propagating through the high acoustic velocity support substrate 52 is higher than the acoustic velocity of the elastic wave propagating through the piezoelectric thin film 53. The acoustic wave propagating through the piezoelectric thin film 53 can be effectively confined in the piezoelectric thin film 53 by using the high sound velocity supporting substrate 52 having such a sound speed as the supporting substrate.
また、図７に示す支持基板５４のように、高音速層５５と、低音速層５６とが積層された構造を有していてもよい。高音速層５５は、伝搬するバルク波の音速が、圧電薄膜５３を伝搬する弾性波の音速よりも高い材料からなる。低音速層５６は、伝搬するバルク波の音速が、圧電薄膜５３を伝搬する弾性波の音速よりも低い材料からなる。また、高音速層５５及び低音速層５６は、それぞれ交互に複数積層されていてもよい。
Further, like the support substrate 54 shown in FIG. 7, the high sound velocity layer 55 and the low sound velocity layer 56 may be laminated. The high sound velocity layer 55 is made of a material in which the sound velocity of the propagating bulk wave is higher than the sound velocity of the elastic wave propagating through the piezoelectric thin film 53. The low acoustic velocity layer 56 is made of a material in which the acoustic velocity of the propagating bulk wave is lower than that of the elastic wave propagating through the piezoelectric thin film 53. Further, a plurality of high sound velocity layers 55 and low sound velocity layers 56 may be alternately laminated.
本発明に係る弾性波装置は、封止樹脂層内に、弾性波素子基板に接する空隙部を有することを特徴とするものであり、従って、弾性波素子基板の第２の主面に設けられている電極構造は、ＩＤＴ電極を有する限り特に限定されるものではない。
The acoustic wave device according to the present invention is characterized by having a gap portion in contact with the acoustic wave element substrate in the sealing resin layer, and is therefore provided on the second main surface of the acoustic wave element substrate. The electrode structure is not particularly limited as long as it has an IDT electrode.
１…弾性波装置
２…実装基板
２ａ…実装面
３…弾性表面波素子
４…封止樹脂層
４ａ～４ｆ…空隙部
５ａ，５ｂ…電極ランド
６…弾性波素子基板
６ａ，６ｂ…第１，第２の主面
６ｃ，６ｄ…側面
７…ＩＤＴ電極
８ａ，８ｂ…端子電極
９ａ，９ｂ…バンプ
１１…吸着ヘッド
１２…基板
１３…樹脂モールド層
２１，３１，４１…弾性波装置
５１…弾性波素子基板
５２…高音速支持基板
５３…圧電薄膜
５４…支持基板
５５…高音速層
５６…低音速層 DESCRIPTION OFSYMBOLS 1 ... Elastic wave apparatus 2 ... Mounting substrate 2a ... Mounting surface 3 ... Surface acoustic wave element 4 ... Sealing resin layer 4a-4f ... Space | gap part 5a, 5b ... Electrode land 6 ... Elastic wave element substrate 6a, 6b ... 1st, Second main surface 6c, 6d ... side surface 7 ... IDT electrodes 8a, 8b ... terminal electrodes 9a, 9b ... bump 11 ... adsorption head 12 ... substrate 13 ... resin mold layers 21, 31, 41 ... elastic wave device 51 ... elastic wave Element substrate 52 ... high sonic support substrate 53 ... piezoelectric thin film 54 ... support substrate 55 ... high sonic velocity layer 56 ... low sonic velocity layer
２…実装基板
２ａ…実装面
３…弾性表面波素子
４…封止樹脂層
４ａ～４ｆ…空隙部
５ａ，５ｂ…電極ランド
６…弾性波素子基板
６ａ，６ｂ…第１，第２の主面
６ｃ，６ｄ…側面
７…ＩＤＴ電極
８ａ，８ｂ…端子電極
９ａ，９ｂ…バンプ
１１…吸着ヘッド
１２…基板
１３…樹脂モールド層
２１，３１，４１…弾性波装置
５１…弾性波素子基板
５２…高音速支持基板
５３…圧電薄膜
５４…支持基板
５５…高音速層
５６…低音速層 DESCRIPTION OF
Claims (10)
- 実装基板と、
前記実装基板上に実装されており、対向し合う第１及び第２の主面と、側面とを有する弾性波素子基板と、前記弾性波素子基板の前記第２の主面上に直接または間接に設けられたＩＤＴ電極とを有する弾性表面波素子と、
前記弾性表面波素子を封止するように前記実装基板上に設けられた封止樹脂層と、
を備え、
前記弾性波素子基板の前記第２の主面が所定間隔を隔てて前記実装基板に対向しており、
前記封止樹脂層内に、前記弾性波素子基板に接している空隙部が設けられている、弾性波装置。 A mounting board;
An elastic wave element substrate mounted on the mounting substrate and having first and second main surfaces and side surfaces facing each other, and directly or indirectly on the second main surface of the elastic wave element substrate. A surface acoustic wave device having an IDT electrode provided on the surface;
A sealing resin layer provided on the mounting substrate so as to seal the surface acoustic wave element;
With
The second main surface of the acoustic wave element substrate is opposed to the mounting substrate at a predetermined interval;
An acoustic wave device in which a gap portion in contact with the acoustic wave element substrate is provided in the sealing resin layer. - 前記空隙部が、前記弾性波素子基板の前記第１の主面に接している、請求項１に記載の弾性波装置。 The elastic wave device according to claim 1, wherein the gap is in contact with the first main surface of the elastic wave element substrate.
- 前記空隙部が、前記弾性波素子基板の前記側面に接している、請求項１または２に記載の弾性波装置。 The elastic wave device according to claim 1 or 2, wherein the gap is in contact with the side surface of the elastic wave element substrate.
- 前記空隙部が、前記弾性波素子基板の一方の前記側面に接している空隙部と、該側面とは反対側の前記側面に接している空隙部とからなる、請求項１～３のいずれか一項に記載の弾性波装置。 4. The method according to claim 1, wherein the gap portion includes a gap portion in contact with one side surface of the acoustic wave element substrate and a gap portion in contact with the side surface opposite to the side surface. The elastic wave device according to one item.
- 前記弾性表面波素子が、前記実装基板にバンプにより接合されている、請求項１～４のいずれか一項に記載の弾性波装置。 The surface acoustic wave device according to any one of claims 1 to 4, wherein the surface acoustic wave element is bonded to the mounting substrate by a bump.
- 前記実装基板上に実装された前記弾性表面波素子及び前記封止樹脂層を平面視した場合、前記バンプと重ならない位置に、前記空隙部が位置している、請求項５に記載の弾性波装置。 The acoustic wave according to claim 5, wherein when the surface acoustic wave element and the sealing resin layer mounted on the mounting substrate are viewed in plan, the gap is located at a position that does not overlap the bump. apparatus.
- 前記弾性波素子基板が、圧電基板である、請求項１～６のいずれか一項に記載の弾性波装置。 The elastic wave device according to any one of claims 1 to 6, wherein the elastic wave element substrate is a piezoelectric substrate.
- 前記弾性波素子基板が、支持基板と、前記支持基板上に積層された圧電薄膜とを有する、請求項１～７のいずれか一項に記載の弾性波装置。 The elastic wave device according to any one of claims 1 to 7, wherein the elastic wave element substrate includes a support substrate and a piezoelectric thin film laminated on the support substrate.
- 前記支持基板が、高音速支持基板であり、前記高音速支持基板を伝搬するバルク波の音速が、前記圧電薄膜を伝搬する弾性波の音速よりも高い、請求項８に記載の弾性波装置。 9. The elastic wave device according to claim 8, wherein the support substrate is a high sound speed support substrate, and a sound velocity of a bulk wave propagating through the high sound velocity support substrate is higher than a sound velocity of an elastic wave propagating through the piezoelectric thin film.
- 前記支持基板が、伝搬するバルク波の音速が、前記圧電薄膜を伝搬する弾性波の音速よりも高い高音速層と、伝搬するバルク波の音速が、前記圧電薄膜を伝搬する前記弾性波の音速よりも低い、低音速層とを有する、請求項８に記載の弾性波装置。 The sound velocity of the bulk acoustic wave propagating through the piezoelectric thin film and the high acoustic velocity layer in which the acoustic velocity of the bulk wave propagating through the support substrate is higher than the acoustic velocity of the elastic wave propagating through the piezoelectric thin film. The acoustic wave device according to claim 8, further comprising a lower sound velocity layer.
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