WO2018062852A1

WO2018062852A1 - Semiconductor light emitting element

Info

Publication number: WO2018062852A1
Application number: PCT/KR2017/010728
Authority: WO
Inventors: 진근모; 이성기; 정연호; 박준천; 이성규; 설대수
Original assignee: 주식회사 세미콘라이트
Priority date: 2016-09-27
Filing date: 2017-09-27
Publication date: 2018-04-05

Abstract

The present disclosure relates to a semiconductor light emitting device comprising: a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through hole-electron recombination; a reflective film formed on the plurality of semiconductor layers so as to reflect the light generated in the active layer toward the first semiconductor layer; a first electrode part electrically connected to the first semiconductor layer and supplying one of an electron and a hole; a second electrode part electrically connected to the second semiconductor layer and supplying the remaining one of the electron and the hole; and an electrode display part interposed between the plurality of semiconductor layers and the reflective film.

Description

Semiconductor light emitting device

The present disclosure relates to a semiconductor light emitting device as a whole, and more particularly to a semiconductor light emitting device having improved light emission efficiency.

The present disclosure relates to a semiconductor light emitting device as a whole, and more particularly, to a semiconductor light emitting device that reduces light absorption loss due to metal and improves heat dissipation efficiency.

Here, the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device. The group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 = x = 1, 0 = y = 1, 0 = x + y = 1). In addition, GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.

1 is a view illustrating an example of a semiconductor light emitting device disclosed in Korean Patent Publication No. 10-1611480.

The semiconductor light emitting device includes a substrate 110, a plurality of

semiconductor layers

130, 140, 150, a buffer layer 120, a light absorption prevention film 141, a current diffusion conductive film 160, a non-conductive reflecting film 191, and a first electrode 175. , A second electrode 185, a first electrical connection 173, a second electrical connection 183, a first lower electrode 171, and a second lower electrode 181.

In the case where an electrode is formed on the non-conductive reflecting film 191, when the light exits from the non-conductive reflecting film 191 to the air layer, the refractive index of the air layer is large so that the light cannot be reflected from the non-conductive reflecting film 191 to the air layer. However, the light hitting the first electrode 175 and the second electrode 185 is reflected by light, but part of the light is absorbed and thus the reflection efficiency is lower than the reflection in the air layer. As a result, the size of the first electrode 175 and the second electrode 185 is reduced to make the area where the air layer and the non-conductive reflective film 191 touch.

2 is a diagram illustrating an example of a semiconductor light emitting device disclosed in Korean Laid-Open Patent Publication No. 10-2011-0031099.

FIG. 2A is a plan view of the light emitting device 201, FIG. 2B is a sectional view taken along the line A-A in FIG. 2A, and FIG. 2C is a sectional view taken along the line B-B in FIG. The light emitting device 201 is provided with a transparent conductive layer 230 provided on the p-side contact layer 228 and a plurality of p electrodes 240 provided in a part of the region on the transparent conductive layer 230. Further, the light emitting device 201 includes a plurality of n electrodes provided on the n-side contact layer 222 exposed by a plurality of vias formed from the p-side contact layer 228 to at least the surface of the n-side contact layer 222. 242, a lower insulating layer 250 provided on the inner surface of the via and the transparent conductive layer 230, and a reflective layer 260 provided inside the lower insulating layer 250 are provided. The reflective layer 260 is provided at portions except the upper portions of the p electrode 240 and the n electrode 242. The lower insulating layer 250 in contact with the transparent conductive layer 230 includes a via 250a extending in the vertical direction on each p electrode 240 and a via 250b extending in the vertical direction on each n electrode 242. ) In addition, the p wiring 270 and the n wiring 272 are provided on the lower insulating layer 250 in the light emitting device 201. The p-wire 270 may include a second planar conductive part 2700 extending in a planar direction on the lower insulating layer 250, and a plurality of second electrically connected to the respective p electrodes 240 through the via 250a. It has a vertical conductive portion 2702. In addition, the n wiring 272 may include a first planar conductive part 2720 extending in the planar direction on the lower insulating layer 250, a via 250b of the lower insulating layer 250, and a via formed in the semiconductor stack structure. It has a plurality of first vertical conductive portions 2722 electrically connected to the respective n electrodes 242 through. In addition, the light emitting device 201 includes an upper insulating layer 280 provided on the lower insulating layer 250 in contact with the p wiring 270, the n wiring 272, and the transparent conductive layer 230, and an upper insulating layer. P-side junction electrode 290 electrically connected to p-line 270 through p-side opening 280a provided in layer 280 and n-side opening 280b provided in upper insulating layer 280. An n-side junction electrode 292 electrically connected to the wiring 272 is provided.

Some of the light emitted from the emission layer 225 may be emitted toward the p-side cladding 226 layer. Light emitted to the p-side cladding 226 layer strikes the n-wiring 272 and the p-wiring 270, partly reflected and partially absorbed. For this reason, in order to prevent absorption of the emitted light as much as possible, the widths of the n wiring 272 and the p wiring 270 are formed thin.

15 is a view illustrating an example of a semiconductor light emitting device disclosed in US Patent No. 7,262,436.

The semiconductor light emitting device may include a substrate 100, an n-type semiconductor layer 300 grown on the substrate 100, an active layer 400 grown on the n-type semiconductor layer 300, and p grown on the active layer 400. Type semiconductor layer 500,

electrodes

901, 902 and 903 serving as reflective films formed on the p-type semiconductor layer 500, and n-side bonding pads 800 formed on the etched and exposed n-type semiconductor layer 300. .

A chip having such a structure, that is, a chip in which both the

electrodes

901, 902, 903 and the electrode 800 are formed on one side of the substrate 100, and the

electrodes

901, 902, 903 function as a reflective film is called a flip chip. The

electrodes

901, 902 and 903 may include a high reflectance electrode 901 (eg Ag), an electrode 903 (eg Au) for bonding, and an electrode 902 for preventing diffusion between the electrode 901 material and the electrode 903 material; Example: Ni). This metal reflective film structure has a high reflectance and has an advantage in current spreading, but has a disadvantage of light absorption by metal.

16 is a diagram illustrating an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-20913.

The semiconductor light emitting device includes a substrate 100, a buffer layer 200 grown on the substrate 100, an n-type semiconductor layer 300 grown on the buffer layer 200, and an active layer 400 grown on the n-type semiconductor layer 300. On the p-type semiconductor layer 500 and the p-type semiconductor layer 500 grown on the active layer 400, and the p-side formed on the light-transmissive conductive film 600 and the light-transmissive conductive film 600. The bonding pad 700 and the n-side bonding pad 800 are formed on the etched and exposed n-type semiconductor layer 300. The distributed Bragg reflector 900 (DBR: Distributed Bragg Reflector) and the metal reflecting film 904 are provided on the transparent conductive film 600. According to this configuration, the light absorption by the metal reflective film 904 is reduced, but there is a disadvantage in that current spreading is not smoother than using the

electrodes

901, 902, 903.

23 is a view showing an example of a conventional Group III nitride semiconductor light emitting device.

The group III nitride semiconductor light emitting device includes a substrate 10 (eg, a sapphire substrate), a buffer layer 20 grown on the substrate 10, an n-type group III nitride semiconductor layer 30 grown on the buffer layer 20, and an n-type 3 An active layer 40 grown on the group nitride semiconductor layer 30, a p-type group III nitride semiconductor layer 50 grown on the active layer 40, and a current diffusion electrode formed on the p-type group III nitride semiconductor layer 50 ( 60), the n-type III-nitride semiconductor in which the p-side pad electrode 70, the p-type III-nitride semiconductor layer 50, and the active layer 40 formed on the current diffusion electrode 60 are mesa-etched and exposed. And an n-side pad electrode 80 and a passivation layer 90 formed on the layer 30.

The current spreading electrode 60 is provided so that the current is well supplied to the entire p-type group III nitride semiconductor layer 50. The current spreading electrode 60 is formed over almost the entire surface of the p-type group III nitride semiconductor layer, for example, formed of a transmissive conductive film using ITO or Ni and Au, or as a reflective conductive film using Ag. Can be formed.

The p-side pad electrode 70 and the n-side pad electrode 80 are metal electrodes for supplying current and wire bonding to the outside, for example, nickel, gold, silver, chromium, titanium, platinum, palladium, and rhodium. And iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum, or any combination thereof.

The passivation layer 90 is formed of a material such as silicon dioxide and may be omitted.

As the semiconductor light emitting device becomes larger in size and consumes higher power, branch electrodes and a plurality of electrodes are introduced to smoothly spread current in the semiconductor light emitting device. For example, according to the Group III nitride semiconductor light emitting device having a large area (eg, 1000 μm / 1000 μm in width and length), branch electrodes are provided at the p-side pad electrode 70 and the n-side pad electrode 80. As a result, current spreading is improved, and in addition, a plurality of p-side pad electrodes 70 and n-side pad electrodes 80 may be provided for sufficient current supply.

Metal-like electrodes such as the p-side pad electrode 70 and the n-side pad electrode 80 have a thick thickness and a large light absorption loss, thereby degrading light extraction efficiency of the light emitting device.

23 is a view showing an example of a conventional Group III nitride semiconductor light emitting device. The group III nitride semiconductor light emitting device includes a substrate 10 (eg, a sapphire substrate), a buffer layer 20 grown on the substrate 10, an n-type group III nitride semiconductor layer 30 grown on the buffer layer 20, and an n-type 3 Current diffusion conductive film formed on the active layer 40 grown on the group nitride semiconductor layer 30, the p-type group III nitride semiconductor layer 50 grown on the active layer 40, and the p-type group III nitride semiconductor layer 50. 60, the p-side bonding pad 70 formed on the current diffusion conductive film 60, the n-type III-nitride semiconductor layer exposed by the mesa-etched p-type III-nitride semiconductor layer 50 and the active layer 40 And an n-side bonding pad 80 and a passivation layer 90 formed over the 30.

The buffer layer 20 is to overcome the difference in lattice constant and thermal expansion coefficient between the substrate 10 and the n-type group III nitride semiconductor layer 30. US Pat. No. 5,122,845 discloses a sapphire substrate at 380 캜 to 800 캜. A technique for growing an AlN buffer layer having a thickness of 100 kPa to 500 kPa at a temperature is described. U.S. Patent No. 5,290,393 describes Al (x) Ga (T) having a thickness of 10 kPa to 5000 kPa at a temperature of 200 to 900C on a sapphire substrate. A technique for growing a 1-x) N (0 ≦ x <1) buffer layer is described, and US Patent Publication No. 2006/154454 discloses growing a SiC buffer layer (seed layer) at a temperature of 600 ° C. to 990 ° C. Techniques for growing an In (x) Ga (1-x) N (0 <x≤1) layer thereon have been described. Preferably, the undoped GaN layer is grown prior to the growth of the n-type Group III nitride semiconductor layer 30, which may be viewed as part of the buffer layer 20 or as part of the n-type Group III nitride semiconductor layer 30. .

The current spreading conductive film 60 is provided so that the current is well supplied to the entire p-type group III nitride semiconductor layer 50. The current spreading conductive film 60 is formed over almost the entire surface of the p-type group III nitride semiconductor layer 50, and is formed of a translucent conductive film using, for example, ITO, ZnO or Ni and Au, or using Ag. It can be formed into a reflective conductive film.

The p-side bonding pad 70 and the n-side bonding pad 80 are metal electrodes for supplying current and wire bonding to the outside, for example, nickel, gold, silver, chromium, titanium, platinum, palladium, and rhodium. And iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum, or any combination thereof.

FIG. 29 is a view showing an example of serially connected LEDs A and B disclosed in US Patent No. 6,547,249. Due to various advantages, as shown in FIG. 29, a plurality of LEDs A and B are used in series. For example, connecting a plurality of LEDs A and B in series reduces the number of external circuits and wire connections, and reduces the light absorption loss due to the wires. In addition, since the operating voltage of the series-connected LEDs A and B all increases, the power supply circuit can be further simplified. When a plurality of LEDs (A, B) are connected in series on a single substrate, compared to connecting individual semiconductor light emitting devices in series, the area occupied is small, so that the installation density can be improved, and therefore, the semiconductor light emitting devices Miniaturization is possible when configuring a lighting device including the.

In order to connect a plurality of LEDs (A, B) in series, an interconnector 34 is deposited to connect the p-side electrode 32 and the n-side electrode 32 of the neighboring LEDs (A, B). However, a plurality of semiconductor layers must be etched to expose the sapphire substrate 20 in an isolation process that electrically insulates the plurality of LEDs (A, B), because the etching depth is long and takes a long time and a large step is large. It is difficult to form the interconnector 34. When the interconnector 34 is formed to have a gentle inclination as shown in FIG. 29 by using the insulator 30, there is a problem in that the integration between the LEDs A and B is increased.

30 is a view showing another example of a series-connected LED disclosed in US Patent No. 6,547,249. Another method of isolating the plurality of LEDs (A, B) is ion implantation without etching the lower semiconductor layer 22 (for example, n-type nitride semiconductor layer) between the plurality of LEDs (A, B). Insulation between the plurality of LEDs A and B by ion implantation reduces the level of the interconnector 34. However, it is difficult to implant ions deeply into the lower semiconductor layer 22 and a long process time is a problem.

FIG. 31 is a diagram illustrating an example of an LED array disclosed in US Patent No. 7,417,259, in which a two-dimensional LED array is formed on an insulating substrate for driving a high drive voltage and a low current. As the insulating substrate, a sapphire monolithically substrate was used, and two LED arrays were connected in parallel in a reverse direction on the substrate. Therefore, AC power can be used as the direct drive power.

32 is a diagram illustrating an example of a semiconductor light emitting device disclosed in Korean Laid-Open Patent Publication No. 10-2011-0031099.

FIG. 32A is a plan view of the light emitting device 201, FIG. 32B is a sectional view taken along the line A-A of FIG. 32A, and FIG. 32C is a sectional view taken along the line B-B of FIG. The light emitting device 201 is provided with a transparent conductive layer 230 provided on the p-side contact layer 228 and a plurality of p electrodes 240 provided in a part of the region on the transparent conductive layer 230. Further, the light emitting device 201 includes a plurality of n electrodes provided on the n-side contact layer 222 exposed by a plurality of vias formed from the p-side contact layer 228 to at least the surface of the n-side contact layer 222. 242, a lower insulating layer 250 provided on the inner surface of the via and the transparent conductive layer 230, and a reflective layer 260 provided inside the lower insulating layer 250 are provided. The reflective layer 260 is provided at portions except the upper portions of the p electrode 240 and the n electrode 242. The lower insulating layer 250 in contact with the transparent conductive layer 230 may include a via 250a extending in the vertical direction on each p electrode 240 and a via 250b extending in the vertical direction on each n electrode 242. ) In addition, the p wiring 270 and the n wiring 272 are provided on the lower insulating layer 250 in the light emitting device 201. The p-wire 270 may include a second planar conductive part 2700 extending in a planar direction on the lower insulating layer 250, and a plurality of second electrically connected to the respective p electrodes 240 through the via 250a. It has a vertical conductive portion 2702. In addition, the n wiring 272 may include a first planar conductive part 2720 extending in the planar direction on the lower insulating layer 250, a via 250b of the lower insulating layer 250, and a via formed in the semiconductor stack structure. It has a plurality of first vertical conductive portions 2722 electrically connected to the respective n electrodes 242 through. In addition, the light emitting device 201 includes an upper insulating layer 280 provided on the lower insulating layer 250 in contact with the p wiring 270, the n wiring 272, and the transparent conductive layer 230, and an upper insulating layer. P-side junction electrode 290 electrically connected to p-line 270 through p-side opening 280a provided in layer 280 and n-side opening 280b provided in upper insulating layer 280. An n-side junction electrode 292 electrically connected to the wiring 272 is provided.

This is described later in the section titled 'Details of the Invention.'

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having an active layer that generates light through recombination of electrons and holes; A reflection film formed on the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer; A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes; A second electrode part electrically connected to the second semiconductor layer and supplying the other one of electrons and holes; And an electrode display unit interposed between the plurality of semiconductor layers and the reflective film.

According to another aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer and having an active layer that generates light through recombination of electrons and holes; A non-conductive reflecting film formed over the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer; An insulating layer formed on the nonconductive reflecting film; A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes; A second electrode part electrically connected to the second semiconductor layer and supplying the other one of electrons and holes; In addition, a semiconductor light emitting device including an electrode display unit interposed between a nonconductive reflective film and an insulating layer is provided.

According to another aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer, the active layers generating light through recombination of electrons and holes, and grown using a growth substrate; A first electrode and a second electrode supplying electrons and holes, comprising: a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; And a light-transmissive conductive film positioned on the second semiconductor layer, wherein the first thickness of the light-transmissive conductive film located in the first region corresponding to the second electrode is equal to that of the light-transmissive conductive film positioned in the second region except for the first region. A semiconductor light emitting element thicker than the second thickness is provided.

According to another aspect of the present disclosure, in a semiconductor light emitting device, a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, A plurality of semiconductor layers interposed between the first semiconductor layer and the second semiconductor layer, the active layers generating light through recombination of electrons and holes, and grown using a growth substrate; A first electrode and a second electrode supplying electrons and holes, comprising: a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; A translucent conductive film on the second semiconductor layer; A light absorption prevention film interposed between the second semiconductor layer and the transparent conductive film; And a light absorption blocking layer interposed between the light absorption prevention layer and the transparent conductive layer, wherein the light absorption prevention layer and the light absorption blocking layer are formed of different materials.

According to an aspect according to the present disclosure, in a semiconductor light emitting device, a first light emitting part and a second light emitting part formed in a longitudinal direction, the first semiconductor layer having a first conductivity, A first light emitting unit and a second light emitting unit including a plurality of semiconductor layers sequentially stacked with an active layer that generates light through recombination of electrons and holes, and a second semiconductor layer having a second conductivity different from the first conductivity; A connection electrode formed in a long direction and electrically connecting the first light emitting part and the second light emitting part; A reflective layer formed to cover the first light emitting part, the second light emitting part, and the connection electrode, and reflecting light generated by the active layer; A first electrode part provided to be in electrical communication with the first semiconductor layer of the first light emitting part and supplying one of electrons and holes; And a second electrode part provided to be in electrical communication with the second semiconductor layer of the second light emitting part and supplying the other one of electrons and holes, wherein the connection electrode is partially connected to the first light emitting part and the second light emitting part. There is provided a semiconductor light emitting device which is positioned in an overlapping manner.

This is described later in the section titled 'Details of the Invention.'

1 is a view showing an example of a conventional semiconductor light emitting device chip (Lateral Chip),

FIG. 2 is a view showing another example of a flip chip of the semiconductor light emitting device chip disclosed in US Patent No. 7,262,436;

3 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure;

4 to 7 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

8 to 10 are views for explaining another example of the semiconductor light emitting device according to the present disclosure;

11 and 12 are views for explaining an example of a semiconductor light emitting device according to the present disclosure;

13 is a view for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

14 is a view for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;

15 is a view showing an example of a semiconductor light emitting device disclosed in US Patent No. 7,262,436;

16 is a view showing an example of a semiconductor light emitting device disclosed in Japanese Laid-Open Patent Publication No. 2006-20913;

17 illustrates an example of a semiconductor light emitting device according to the present disclosure;

18 illustrates another example of a semiconductor light emitting device according to the present disclosure;

19 illustrates another example of a semiconductor light emitting device according to the present disclosure;

20 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

21 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

22 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

23 is a view showing an example of a conventional Group III nitride semiconductor light emitting device;

24 and 25 illustrate an example of a semiconductor light emitting device according to the present disclosure;

26 illustrates another example of a semiconductor light emitting device according to the present disclosure;

27 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

28 is a view showing another example of a semiconductor light emitting device according to the present disclosure;

29 is a view showing an example of a series-connected LED disclosed in US Pat. No. 6,547,249;

30 shows another example of a series connected LED disclosed in US Pat. No. 6,547,249;

31 is a view showing an example of an LED array disclosed in US Patent No. 7,417,259;

32 is a view showing an example of a semiconductor light emitting device disclosed in Korean Laid-Open Patent Publication No. 10-2011-0031099;

33 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure;

FIG. 34 is a view for explaining an example of a cut plane taken along the line A-A of FIG. 33;

35 is a view for explaining an example of a connection electrode;

36 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure;

37 is a view for explaining another example of a semiconductor light emitting device according to the present disclosure;

38 illustrates another example of the semiconductor light emitting device according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

3 is a view for explaining an example of the semiconductor light emitting device 1 according to the present disclosure.

FIG. 3A is a perspective view and FIG. 3B is a cross-sectional view taken along AA ′.

The semiconductor light emitting device 1 may include a substrate 10, a plurality of semiconductor layers 20, 30, 40, and 50, an electrode display unit 100, a reflective layer 91, a first connection electrode 71, and a second connection electrode ( 75, a first electrode 81, and a second electrode 85. Hereinafter, the group III nitride semiconductor light emitting element will be described as an example.

Sapphire, SiC, Si, GaN and the like are mainly used as the substrate 10, and the substrate 10 may be finally removed.

The plurality of semiconductor layers 20, 30, 40, and 50 may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and different from the first conductivity. A second semiconductor layer 50 having a second conductivity (for example, Mg doped GaN) and interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes An active layer 40 (eg, an InGaN / (In) GaN multi-quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.

The electrode display unit 100 displays the polarity of the first electrode 81 and the second electrode 85.

In this example, the first electrode 81 is connected to the first semiconductor layer 30 (eg, Si-doped GaN) having a first conductivity, that is, an n-type polarity, and the second electrode 85 is connected to the second conductivity. That is, the second semiconductor layer 50 (eg, Mg-doped GaN) having a p-type polarity is connected.

Accordingly, in the present example, when viewed from the side of the substrate 10, the electrode display portion 100 indicates that the first electrode 81 has an n-type polarity and the second electrode 85 has a p-type polarity. This can be confirmed by the diode symbol of. In contrast, the polarities of the first electrode 81 and the second electrode 85 may be reversed.

Conventionally, grooves or notches have been formed in the edges of opposing first and second electrodes to identify the polarity of the electrodes. Therefore, when observing from the substrate side, it is difficult to distinguish the polarity of the electrode, and it is difficult to identify the presence or absence of grooves or notches.

However, when the electrode display unit 100 is formed between the plurality of semiconductor layers 30, 40, 50 and the reflective layer 91, when viewed from the side of the substrate 10, the first electrode 81 and the second electrode ( The polarity of 85 may be easily confirmed through the electrode display unit 100.

In this example, the electrode display unit 100 may be represented by a diode symbol. However, the present invention is not limited thereto, and the polarity of the first electrode 81 and the second electrode 85 may be represented by a symbol capable of displaying the polarity thereof.

The electrode display unit 100 may be formed to have a thickness and a size that do not affect the semiconductor light emitting device 1. In this example, the electrode display part 100 may be formed to a thickness of about 5 μm or less and a size of about 100 μm or less. For example, the electrode display unit 100 has a thickness of 2 μm and a size of 8 μm.

The electrode display unit 100 is made of the same material as the first electrode 81 and the second electrode 85.

In this example, the electrode display unit 100 is positioned between the plurality of semiconductor layers 30, 40, 50 and the reflective layer 91 in which the first electrode 81 and the second electrode 85 are not formed. That is, the electrode display unit 100 does not overlap the first electrode 81 and the second electrode 85.

The reflective layer 91 reflects light from the active layer 40 toward the plurality of semiconductor layers 30, 40, and 50. In this example, the reflective layer 91 is formed of a non-conductive reflective film to reduce light absorption by the metal reflective film.

The reflective layer 91 includes, for example, a distributed Bragg reflector 91a, a dielectric film 91b and a clad film 91c. The dielectric film 91b or the clad film 91c may be omitted. In the case where the distributed Bragg reflector 91a is nonconductive, the entirety of the dielectric film 91b, the distributed Bragg reflector 91a and the clad film 91c function as the nonconductive reflecting film 91.

The distribution Bragg reflector 91a reflects the light from the active layer 40 toward the substrate 10 side. The distribution Bragg reflector 91a is preferably formed of a light transmitting material (eg, SiO 2 / TiO 2) to prevent absorption of light.

The dielectric film 91b is positioned between the plurality of semiconductor layers 30, 40, and 50 and the distribution Bragg reflector 91a, and the dielectric film 91b is formed of a dielectric (for example, SiO2) having a refractive index smaller than the effective refractive index of the distribution Bragg reflector 91a. Can be done. Here, the effective refractive index refers to the equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices. The dielectric film 91b may also help reflection of light, and may also function as an insulating film electrically blocking the first connection electrode 71 from the second semiconductor layer 50 and the active layer 40.

The clad film 91c is formed on the distributed Bragg reflector 91a, and the clad film 91c may also be made of a material having a lower refractive index than that of the distributed Bragg reflector 91a (eg, Al2O3, SiO2, SiON, MgF, CaF). have.

A large portion of light generated in the active layer 40 is reflected by the dielectric film 91b and the distributed Bragg reflector 91a toward the first semiconductor layer 30. The relationship between the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c can be described in terms of an optical waveguide. The optical waveguide is a structure that guides the light by using total reflection by surrounding the light propagation part with a material having a lower refractive index.

From this point of view, when the distributed Bragg reflector 91a is viewed as the propagation section, the dielectric film 91b and the clad film 91c surround the propagation section and can be viewed as part of the optical waveguide.

At least one first opening 63, a plurality of

second openings

5 and 7, and a plurality of third openings 65 are formed in the reflective layer 91. In the present example, the plurality of first openings 63 are formed to the reflective layer 91, the second semiconductor layer 50, the active layer 40, and a part of the first semiconductor layer 30. Referring to FIG. 3B, a plurality of

second openings

5 and 7 are formed through the reflective layer 91, and a plurality of third openings 65 are formed near the edges.

The plurality of

second openings

5, 7 comprises an internal opening 5 and at least two peripheral openings 7 positioned around the internal opening. The plurality of

second openings

5, 7 in this example comprises one inner opening 5 and four peripheral openings 7. In this example, the inner opening 5 and the peripheral opening 7 are passageways for hole supply. When viewed in plan view, the inner opening 5 is located approximately in the center of the semiconductor light emitting element 1, and is located between the first electrode 81 and the second electrode 85.

The first connection electrode 71 and the second connection electrode 75 are formed on the reflective layer 91, for example, on the clad film 91c.

The first connection electrode 71 extends into the plurality of first openings 63 to be electrically connected to the first semiconductor layer 30.

The second connection electrode 75 is electrically connected to the second semiconductor layer 50 through the plurality of

second openings

5 and 7. The inner opening 5 and the plurality of peripheral openings 7 are electrically connected by the second connection electrode 75.

In this example, the second connection electrode 75 has a quadrangular plate shape and covers the inner opening 5 and the plurality of peripheral openings 7.

In this example, the first connection electrode 71 is formed in a closed loop shape to surround the second connection electrode 75. In this example, the semiconductor light emitting device 1 includes a third connection electrode 73.

The third connection electrode 73 supplies holes to the second semiconductor layer 50 through the third opening 65.

The third connection electrode 73 is positioned outside the second connection electrode 75 to connect the plurality of third openings 65 in a closed loop shape.

The semiconductor light emitting device 1 includes a conductive film 60 between a plurality of semiconductor layers 30, 40, 50 and a reflective layer 91, for example, between a second semiconductor layer 50 and a dielectric film 91b. It may include. The conductive layer 60 may be formed of a current diffusion electrode (ITO, etc.), an ohmic metal layer (Cr, Ti, etc.), a reflective metal layer (Al, Ag, etc.), or a combination thereof.

In order to reduce light absorption by the metal layer, the conductive film 60 is preferably made of a light transmissive conductive material (eg, ITO).

The second connection electrode 75 and the third connection electrode 73 are respectively connected to the conductive layer 60 by being connected to the plurality of

second openings

5 and 7 and the plurality of third openings 65. In this example, the dielectric film 91b extends between the conductive film 60 and the distributed Bragg reflector 91a to the inner surface of the first opening 63, thereby connecting the first connection electrode 71 to the second semiconductor layer 50. ) And the active layer 40 and the second connection electrode 75. Alternatively, another separate insulating film may be formed between the dielectric film 91b and the conductive film 60.

In the present example, the plurality of first openings 63 and the plurality of second openings 5, as described above, for current diffusion to the plurality of semiconductor layers 30, 40, 50 or for uniform current supply. 7) and a plurality of third openings 65 are formed. The inner opening 5 of the plurality of

second openings

5, 7 functions to further increase the light emission as compared to the case where there is no inner opening 5 in the local area in which the inner opening 5 is located.

The number, spacing, and arrangement of the first openings 63, the

second openings

5, 7, and the third openings 65 are used for the size of the semiconductor light emitting device, the current spreading and the uniform current supply, and the uniformity of the light emission. Can be adjusted appropriately. Unlike in FIG. 3B, at least one inner opening 5 may be formed. In this example, the plurality of peripheral openings 7, the plurality of first openings 63, and the plurality of third openings 65 are formed symmetrically with respect to the inner opening 5.

A current is supplied through the plurality of first openings 63 and the plurality of

second openings

5, 7, and when the current is nonuniform, a portion of the first openings 63 and the

second openings

5, 7 is supplied. This can be biased, which can lead to deterioration in locations where current is biased in the long run.

In the present disclosure, the first connection electrode 71 is formed in a closed loop shape to surround the second connection electrode 75, and the third connection electrode 73 also surrounds the second connection electrode 75 and has a closed loop shape. Formed. Here, the closed loop shape is not limited to the complete closed loop shape, but may include a closed loop shape in which a part is broken.

As such, while supplying an equal current through the connecting electrodes and the openings, it is geometrically symmetrical, which is very advantageous for improving the uniformity of the current supply and consequently the uniformity of the current density in the light emitting surface. It may be better for the closed loop shape to have a shape along the outer shape of the light emitting surface of the semiconductor light emitting device to improve the uniformity of the current distribution.

If the inner opening 5 becomes a current path of a different polarity from the plurality of peripheral openings 7, the electrical opening to the inner opening 5 may be difficult or other complicated designs may have to be taken into account in this example, so that the inner opening 5 may be considered. And the plurality of peripheral openings 7 become currents having the same polarity, that is, hole supply passages. As described above, when both the inner opening 5 and the plurality of peripheral openings 7 become the hole supply passages, in view of electron supply, the plurality of semiconductor layers 30, 40, 50 under the second connection electrode 75. ) Is expected to be smaller than the electron density in the plurality of semiconductor layers 30, 40, 50 outside the second connection electrode 75. Contrary to this prediction, however, the present disclosure confirmed that the light emission increased in the plurality of semiconductor layers 30, 40, and 50 under the second connection electrode 75 as compared with the case where there was no internal opening 5. In the semiconductor layers 30, 40, and 50 under the second connection electrode 75, holes having a relatively high density due to the internal opening 5 attract electrons in a region having a relatively low hole density. It is assumed that this is caused by an increase in the recombination rate of the holes.

As described above, the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73, the plurality of first openings 63, and the plurality of first connection electrodes 71, in the outer region of the second connection electrode 75. The inner opening 5 inside the second connection electrode 75 while the

second openings

5, 7 and the plurality of third openings 65 achieve an improved uniform current distribution in a closed loop shaped arrangement and a symmetrical arrangement. ) May be maintained or increased.

In order to improve the luminous efficiency, a suitable value of the area of the second connection electrode 75 or the distance between the inner opening 5 and the peripheral opening 7 can be found. For example, as the distance between the inner opening 5 and the peripheral opening 7 increases, the area of the second connection electrode 75 increases and the area of which the hole density is relatively high increases. If the area of the second connection electrode 75 is increased, the hole supply can be made larger. In order to maintain the light emission performance of the semiconductor light emitting element 1, it is preferable that the temperature difference between the positions on the light emitting surface is small. If the area of the second connection electrode 75 is increased, the number of electrical connections with the second electrode 85 to be described later may be further increased, and may be more advantageous for heat dissipation through the second electrode 85.

On the other hand, when the area of the second connection electrode 75 is increased, a region having a relatively high hole density on the light emitting surface increases, which may not be good in terms of uniformity. The extent to which the holes attract electrons to emit light may be influenced by the area of the second connection electrode 75 or the distance and number of the inner opening 5 and the peripheral opening 7. Therefore, it is possible to determine the area of the second connection electrode 75 or the distance and the number of the peripheral opening 7 and the area of the second connection electrode 75 by selecting which advantage to select in the design of the semiconductor light emitting device.

In this example, the semiconductor light emitting device 1 includes an insulating layer 95 covering the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 on the reflective layer 91. At least one fourth opening 67, at least one fifth opening 68, and at least one sixth opening 69 are formed in the insulating layer 95. The insulating layer 95 may be made of SiO 2.

The first electrode 81 and the second electrode 85 are formed on the insulating layer 95.

The first electrode 81 is electrically connected to the first connection electrode 71 through at least one fourth opening 67 to supply electrons to the first semiconductor layer 30.

The second electrode 85 is electrically connected to the second connection electrode 75 through the fifth opening 68, and is electrically connected to the third connection electrode 73 through the sixth opening 69. Holes are supplied to the semiconductor layer 50.

The first electrode 81 and the second electrode 85 may be electrodes for eutectic bonding.

The semiconductor light emitting device 1 reduces the light absorption by using the non-conductive reflecting film 91 including the distribution Bragg reflector 91a instead of the metal reflecting film.

In addition, a plurality of first openings 63, a plurality of

second openings

5 and 7, and a plurality of third openings 65 are formed to facilitate current diffusion into the plurality of semiconductor layers 30, 40, and 50. Let's do it.

In addition, current is supplied to the first connection electrode 71 or the third connection electrode 73 in the closed loop shape more evenly, thereby preventing deterioration due to current bias.

Then, the inner opening 5 covered by the innermost second connection electrode 75 is formed to maintain or increase light emission in the inner region.

4 to 7 illustrate an example of a method of manufacturing the semiconductor light emitting device 1 according to the present disclosure.

First, a plurality of semiconductor layers 30, 40, 50 are grown on the substrate 10. For example, as shown in FIG. 4, a buffer layer (eg, an AlN or GaN buffer layer) and an undoped semiconductor layer (eg, an un-doped GaN), a first layer are formed on the substrate 10 (eg, Al 2 O 3, Si, SiC). A first semiconductor layer 30 having a conductivity (e.g., Si doped GaN), an active layer 40 that generates light through recombination of electrons and holes (InGaN / (In) GaN multi-quantum well structure), and a first conductivity A second semiconductor layer 50 (eg, Mg doped GaN) having another second conductivity is grown. Here, the buffer layer 20 may be omitted, and each of the plurality of semiconductor layers 30, 40, and 50 may be formed in multiple layers. The first semiconductor layer 30 and the second semiconductor layer 50 may be formed with opposite conductivity, but are not preferable in the case of a group III nitride semiconductor light emitting device.

Next, the conductive film 60 is formed on the second semiconductor layer 50.

The conductive layer 60 may be formed of a light transmissive conductor (eg, ITO) to reduce light absorption. Although the conductive film 60 may be omitted, it is generally provided to spread the current to the second semiconductor layer 50.

Next, the electrode display unit 100 is formed on the conductive film 60.

The electrode display unit 100 is positioned between the semiconductor layers 30, 40, 50 and the reflective layer 91 in which the first electrode 81 and the second electrode 85 are not formed. That is, the electrode display unit 100 does not overlap the first electrode 81 and the second electrode 85.

Next, the reflective layer 91 is formed on the conductive film 60. For example, the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c covering the conductive film 60 are formed. The dielectric film 91b or the clad film 91c may be omitted.

The distributed Bragg reflector 91a is formed by stacking a pair of SiO 2 and TiO 2 a plurality of times, for example. In addition, the distribution Bragg reflector 91a may be formed of a combination of a high refractive index material such as Ta 2 O 5, HfO, ZrO, and SiN, and a dielectric thin film (typically SiO 2) having a lower refractive index. When the distribution Bragg reflector 91a is made of TiO 2 / SiO 2, it is desirable to perform an optimization process in consideration of the incident angle and the reflectance according to the wavelength based on an optical thickness of 1/4 of the wavelength of the light emitted from the active layer. The thickness of each layer does not have to obey an optical thickness of 1/4 of the wavelength. The number of combinations is suitable for 4 to 20 pairs.

It is preferable that the effective refractive index of the distribution Bragg reflector 91a is larger than the refractive index of the dielectric film 91b for the reflection and guide of light. In the case where the distributed Bragg reflector 91a is composed of SiO 2 / TiO 2, since the refractive index of SiO 2 is 1.46 and the refractive index of TiO 2 is 2.4, the effective refractive index of the distributed Bragg reflector has a value between 1.46 and 2.4.

Therefore, the dielectric film 91b may be made of SiO2, and the thickness thereof is appropriately 0.2um to 1.0um. Prior to the deposition of the distributed Bragg reflector 91a requiring precision, by forming the dielectric film 91b having a predetermined thickness, the distributed Bragg reflector 91a can be stably manufactured and can also help reflection of light. .

The clad film 91c may be made of a metal oxide such as Al2O3, a dielectric film 91b such as SiO2, SiON, MgF, CaF, or the like. The clad film 91c may also be formed of SiO 2 having a refractive index of 1.46 smaller than the effective refractive index of the distribution Bragg reflector 91a. The clad film 91c preferably has a thickness of? / 4n to 3.0 um. Where? Is the wavelength of light generated in the active layer 40 and n is the refractive index of the material forming the clad film 91c. When λ is 450 nm (4500 A), it can be formed to a thickness of 4500/4 * 1.46 = 771 A or more.

Considering that the uppermost layer of the distributed Bragg reflector 91a composed of a plurality of pairs of SiO2 / TiO2 may be made of an SiO2 layer having a thickness of λ / 4n, the clad film 91c is located below the distributed Bragg reflector 91a. It is preferable to be thicker than [lambda] / 4n so as to be distinguished from the uppermost layer. However, the clad film 91c is not only burdened with the subsequent steps of forming the plurality of first openings 63 and the plurality of

second openings

5, 7 but also because the increase in thickness does not contribute to the improvement of efficiency and only the material cost can be increased. ) Is not too thick beyond 3.0um. In order not to burden the plurality of first openings 63, the plurality of

second openings

5, 7 and the plurality of third opening forming processes, the maximum value of the clad film 91c is formed within 1 μm to 3 μm. It will be advisable to be. However, in some cases, it is not impossible to form more than 3.0um.

When the distribution Bragg reflector 91a and the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 are in direct contact with each other, a part of the light traveling through the distribution Bragg reflector 91a Absorption may occur by the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73. Therefore, by introducing the clad film 91c and the dielectric film 91b having a lower refractive index than the distribution Bragg reflector 91a as described above, the amount of light absorption can be greatly reduced.

Although the case where the dielectric film 91b is omitted may be considered, it is not preferable from the viewpoint of the optical wave guide, but from the viewpoint of the overall technical idea of the present disclosure, it is composed of the distributed Bragg reflector 91a and the clad film 91c. There is no reason to rule out this.

Instead of the distribution Bragg reflector 91a, one may consider the case where the dielectric film 91b made of TiO2 is used as the dielectric material. In the case where the distribution Bragg reflector 91a is provided with an SiO2 layer at the top, the case where the clad film 91c is omitted may also be considered.

As such, the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c serve as an optical waveguide as a non-conductive reflecting film, and preferably have a total thickness of 1 to 8 um.

Subsequently, as shown in FIGS. 5 and 6, for example, the plurality of first openings 63 and the plurality of second openings 5 in the reflective layer 91 by dry etching or wet etching, or a combination thereof. , 7) and a plurality of third openings 65 are formed.

The first opening 63 is formed to the reflective layer 91, the second semiconductor layer 50, the active layer 40, and a portion of the first semiconductor layer 30. The

second openings

5 and 7 and the third opening 65 are formed to penetrate the reflective layer 91 to expose a portion of the conductive film 60. The first opening 63, the

second openings

5, 7 and the third opening 65 may be formed after the formation of the reflective layer 91, but alternatively, before the conductive film 60 is formed or the conductive film 60. After the formation, the first openings 63 are partially formed in the plurality of semiconductor layers 30, 40, and 50, and the reflective layers 91 are formed to cover the first openings 63, and then penetrate the reflective layers 91. The first opening 63 can be formed through the process of, and the

second openings

5, 7 and the third opening 65 can be formed simultaneously with the further process or in another process.

Subsequently, as illustrated in FIG. 7, the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 are formed on the reflective layer 91. For example, the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 may be deposited using sputtering equipment, E-beam equipment, or the like. The first connection electrode 71, the second connection electrode 75, and the third connection electrode 73 may be formed using Cr, Ti, Ni, or a combination thereof for stable electrical contact. The same reflective metal layer may be included.

The first connection electrode 71 may be formed to contact the first semiconductor layer 30 through the plurality of first openings 63, and the second connection electrode 75 may be the plurality of

second openings

5 and 7. ), The third connection electrode 73 may be formed to contact the conductive layer 60 through the plurality of third openings 65.

Next, an insulating layer 95 is formed to cover the first connection electrode 71, the second connection electrode 75, and the third connection electrode 73. Representative material of the insulating layer 95 is SiO 2, but is not limited thereto, and SiN, TiO 2, Al 2 O 3, Su-8, or the like may be used. Thereafter, at least one fourth opening 67, at least one fifth opening 68, and at least one sixth opening 69 are formed in the insulating layer 95.

Next, for example, the first electrode 81 and the second electrode 85 may be deposited on the insulating layer 95 using sputtering equipment, E-beam equipment, or the like. The first electrode 81 is connected to the first connection electrode 71 through at least one fourth opening 67, and the second electrode 85 is at least one fifth opening 68 and at least one agent. It is connected to the second connection electrode 75 and the third connection electrode 73 through the six opening 69. In this example, the first electrode 81 and the second electrode 85 are displayed with their polarities by the electrode display unit 100, and do not overlap with the electrode display unit 100.

The first electrode 81 and the second electrode 85 may be electrically connected to electrodes provided outside (package, COB, submount, etc.) by a method such as stud bump, conductive paste, and eutectic bonding. In the case of eutectic bonding, it is important that the height difference between the first electrode 81 and the second electrode 85 is not large. According to the semiconductor light emitting device 1 according to the present example, since the first electrode 81 and the second electrode 85 can be formed on the insulating layer 95 by the same process, there is almost no height difference between the two electrodes. Thus there is an advantage in the case of eutectic bonding. In the case where the semiconductor light emitting device is electrically connected to the outside through the eutectic bonding, the uppermost portions of the first electrode 81 and the second electrode 85 are eutectic bonding such as Au / Sn alloy and Au / Sn / Cu alloy. It can be formed of a material.

8 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure.

Referring to FIG. 8, the semiconductor light emitting element 11 illustrates a flip chip. In the present disclosure, the semiconductor light emitting device 11 is not limited to such a flip chip, and a lateral chip or a vertical chip may also be applied.

The semiconductor light emitting device 11 may include a substrate 10, a plurality of semiconductor layers 30, 40, and 50, an electrode display unit 100, a light reflection layer R, a first electrode 80, and a second electrode 70. It includes.

For example, sapphire, SiC, Si, GaN, and the like may be used as the substrate 10 as a group III nitride semiconductor light emitting device, and the substrate 10 may be finally removed.

The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer (not shown) formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and different from the first conductivity. A second semiconductor layer 50 having a second conductivity (for example, Mg doped GaN) and interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes An active layer 40 (eg, an InGaN / (In) GaN multi-quantum well structure).

Each of the semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer may be omitted. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.

The first electrode 80 is in electrical communication with the first semiconductor layer 30 to supply electrons. In this example, the first electrode 80 has a first conductivity, that is, an n-type polarity.

The second electrode 70 is in electrical communication with the second semiconductor layer 50 to supply holes. In this example, the second electrode 70 has a second conductivity, that is, a p-type polarity.

A light reflection layer R is interposed between the second semiconductor layer 50 and the first and

second electrodes

80 and 70, and the light reflection layer R is an insulating layer such as SiO 2, a distributed bragg reflector (DBR), or an ODR. It may have a multilayer structure including an omni-directional reflector.

The electrode display unit 100 is interposed between the second semiconductor layer 50 and the light reflection layer R on which the first electrode 80 and the second electrode 70 are not formed, and the first electrode 80 and the second electrode. It is located between the electrodes 70. That is, the electrode display unit 100 does not overlap the first electrode 80 and the second electrode 70.

The polarity of the first electrode 80 and the second electrode 70 is displayed. In the present example, the electrode display unit 100 may be represented by a diode symbol, but is not limited thereto. The electrode display unit 100 may be represented by a symbol capable of displaying polarities of the first electrode 80 and the second electrode 70. .

In this example, when viewed from the side of the substrate 10, the diode symbol of the electrode display portion 100 indicates that the first electrode 80 has an n-type polarity and the second electrode 70 has a p-type polarity. You can check it through

9 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

Referring to FIG. 9, a metal reflective film R is provided on the second semiconductor layer 50, a second electrode 70 is provided on the metal reflective film R, and the first semiconductor layer 30 exposed by mesa etching. ) May be different from the first electrode 80.

A transparent conductive film (not shown) may be interposed between the second semiconductor layer 50 and the light reflection layer R.

10 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device shown in FIG. 10 is substantially the same as the semiconductor light emitting device described in FIG. 9 except for the formation position of the electrode display unit 100. Therefore, duplicate description is omitted.

The electrode display unit 100 is interposed between the second semiconductor layer 50 and the light reflection layer R on which the first electrode 80 and the second electrode 70 are not formed, and the first electrode 80 and the second electrode. It does not overlap with the electrode 70.

For example, as shown in FIG. 10 (a), the first electrode 80 is positioned on the first surface, that is, the upper surface thereof, or as shown in FIG. 10 (b), the first electrode 80. It may be located on the second surface, that is, the lower surface opposite to the first surface of the). The present invention is not limited thereto and may be interposed between the second semiconductor layer 50 and the light reflection layer R which do not overlap the first electrode 80 and the second electrode 70.

FIG. 11 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure, and FIG. 12 is a diagram illustrating an example of a cross section taken along line A-A in FIG. 11.

11 and 12, the semiconductor light emitting device 1 may include a substrate 10, a plurality of semiconductor layers 30, 40, and 50, a non-conductive reflective film 91, an insulating layer 95, and a first electrode part. 80, a second electrode portion 70, and an electrode display portion 100. Hereinafter, the group III nitride semiconductor light emitting element will be described as an example.

The plurality of semiconductor layers 30, 40, and 50 may include a first semiconductor layer 30, an active layer 40, and a second semiconductor layer 50 sequentially stacked.

The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and are mainly made of GaN in the group III nitride semiconductor light emitting device.

The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer 20 formed on the substrate 10, a first semiconductor layer 30 having a first conductivity (eg, Si-doped GaN), and a second different from the first conductivity. A conductive second semiconductor layer 50 (eg, Mg-doped GaN) and an active layer interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes ( 40; e.g., InGaN / (In) GaN multi-quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may be formed in multiple layers, and the buffer layer 20 may be omitted.

The active layer 40 is formed between the first semiconductor layer 30 and the second semiconductor layer 50 and generates light.

The semiconductor light emitting device 1 includes a light-transmissive conductive film between the plurality of semiconductor layers 30, 40, 50 and the nonconductive reflecting film 91, for example, between the second semiconductor layer 50 and the nonconductive reflecting film 91. 60). The transparent conductive film 60 may be omitted.

The transparent conductive layer 60 may be formed of a transparent conductive material (eg, ITO), an ohmic metal layer (Cr, Ti, etc.), a reflective metal layer (Al, Ag, etc.), or a combination thereof. In order to reduce light absorption by the metal layer, the light transmissive conductive film 60 is preferably made of a light transmissive conductive material (eg, ITO).

The non-conductive reflective film 91 may be formed on the plurality of

semiconductor layers

130, 140, and 150 to reflect the light generated by the active layer 40 toward the first semiconductor layer 30, and may be formed of a dielectric material. In the present disclosure, the nonconductive reflective film 91 is formed to cover the transparent conductive film 60, the first and second

ohmic electrodes

81 and 71, and the plurality of semiconductor layers 30, 40, and 50.

In this example, the non-conductive reflecting film 91 is insulative and is connected to the plurality of semiconductor layers 30, 40, 50 by an

electrical connection

82, 72 passing through the non-conductive reflecting film 91. It is a flip chip in electrical communication.

For example, the non-conductive reflecting film 91 is formed of an insulating material at least the side of the light reflecting of the non-conductive reflecting film 91 to reduce the light absorption by the metal reflecting film, preferably DBR (Distributed Bragg Reflector) or ODR It may be a multilayer structure including an omni-directional reflector. Insulating means that the non-conductive reflecting film 91 is not used as a means of electrical conduction, and does not necessarily mean that the entire non-conductive reflecting film 91 should be made of only a non-conductive material.

An example of the multilayer structure includes a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c. The dielectric film 91b may reduce the height difference to stably manufacture the distributed Bragg reflector 91a and may also help to reflect light.

SiO 2 is a suitable material for the dielectric film 91b. The distributed Bragg reflector 91a is formed on the dielectric film 91b. The distribution Bragg reflector 91a may consist of repeated stacking of materials with different reflectances, for example, SiO ₂ / TiO ₂ , SiO ₂ / Ta ₂ O ₂ , or SiO 2 / HfO, and for blue light SiO ₂ / TiO ₂ has a good reflection efficiency, and for UV light, SiO ₂ / Ta ₂ O ₂ , or SiO ₂ / HfO will have a good reflection efficiency.

The clad film 91c may be made of a metal oxide such as Al ₂ O ₃ , a dielectric film 91b such as SiO ₂ , SiON, MgF, CaF, or the like.

The distributed Bragg reflector 91a has a higher reflectance as light closer to the vertical direction reflects approximately 99% or more. In order for the non-conductive reflecting film 91 to function well, each material layer of a multilayer structure must be formed to a specially designed thickness. The non-conductive reflecting layer 91 has portions where height differences occur in the non-conductive reflecting layer 91 due to the following structures (for example, ohmic electrodes and trenches between the light emitting parts). Due to this height difference, there is an area in which each material layer of the nonconductive reflecting film 91 is hard to be formed to a designed thickness, and in this area, the reflection efficiency may decrease. The reflection efficiency may be lower than that of other parts between the light emitting parts. Therefore, forming as few metal layers between the light emitting portions as possible is preferable to reduce the light absorption loss by the metal.

The insulating layer 95 is formed on the nonconductive reflecting film 91. In the present disclosure, the insulating layer 95 is formed to cover the first and

second connection electrodes

83 and 73 and the nonconductive reflective film 91.

The insulating layer 95 may be made of SiO ₂ . The insulating layer 95 is not limited thereto, and SiN, TiO ₂ , Al ₂ O ₃ , Su-8, or the like may be used.

The refractive index of the insulating layer 95 covering the non-conductive reflective film 91 is similar to that of the non-conductive reflective film 91, so it is not reflected and transmits well. Therefore, some of the light that is not reflected by the non-conductive reflecting film 91 exits to the insulating layer 95 and has a problem in that light efficiency is inferior. Therefore, the first and

second connection electrodes

83 and 73 cover the light exiting to the insulating layer 95 entirely on the non-conductive reflecting film 91 to reflect the light exiting to the insulating layer 95. do.

As a result, a part of light that is not reflected by the nonconductive reflecting film 91 is also reflected by the first and

second connection electrodes

83 and 73 and exits the semiconductor light emitting device 1 to increase the light extraction efficiency.

The first electrode portion 80 and the second electrode portion 70 are the

ohmic electrodes

81 and 71, the

connection electrodes

83 and 73, the

electrical connections

82, 84, 72 and 74, and the

pad electrodes

85 and 75. Each).

The first electrode portion 80 and the second electrode portion 70 are symmetrically arranged around the connecting

electrodes

83 and 73 for current spreading and equal current supply. Therefore, it has a very symmetrical structure and is a good structure for improving uniformity.

The first electrode part 80 is provided to be in electrical communication with the first semiconductor layer 30, and supplies one of electrons and holes, and the second electrode part 70 is electrically connected to the second semiconductor layer 50. It is provided to communicate, and supplies the other one of the electron and the hole.

The first connection electrode 83 and the second connection electrode 73 are formed on the nonconductive reflective film 191. In detail, the first connection electrode 83 penetrates the non-conductive reflecting film 91, is electrically connected to the first semiconductor layer 30 through the first electrical connection 82, and the second connection electrode 73. The light penetrates the non-conductive reflecting layer 91 and is electrically connected to the second semiconductor layer 50 through the second electrical connection 72.

It is preferable that the first connection electrode 83 and the second connection electrode 73 are formed on the non-conductive reflecting film 91 in a wide manner. This is because the first connection electrode 83 and the second connection electrode 73 may absorb shocks on the nonconductive reflective film 91 to prevent cracking or breaking of the nonconductive reflective film 91.

In general, since the first connection electrode 83 and the second connection electrode 73 are made of metal, the first connection electrode 83 and the second connection electrode 73 may also absorb light, so that the first connection electrode 83 and the second connection electrode 73 may be formed to be narrow. I think that it is a method to raise brightness.

However, since most of the light is reflected by the non-conductive reflective film 91 toward the first semiconductor layer 30, only a small amount of light enters the first connection electrode 83 and the second connection electrode 73, and some of the light is absorbed. Therefore, it has been found that the wideness of the first connection electrode 83 and the second connection electrode 73 does not affect the brightness much. Therefore, by forming the first connection electrode 83 and the second connection electrode 73 wide on the nonconductive reflecting film 91, the stability and reliability of the semiconductor light emitting device can be improved.

The first connection electrode 83 and the second connection electrode 73 may be formed of metal. For example, it is preferable to form with Cr, Ti, Ni, Au, Ag, TiW, Pt, Al, etc.

The first ohmic electrode 81 is formed between the first electrical connection 82 and the first semiconductor layer 30 to reduce contact resistance and provide stable electrical connection, and the second ohmic electrode 71 is formed of the second electrical connection ( It is formed between the 72 and the second semiconductor layer 50 for reducing contact resistance and stable electrical connection.

Ohmic metal (Cr, Ti, etc.) may be used for the first ohmic electrode 81 and the second ohmic electrode 71. The first ohmic electrode 81 and the second ohmic electrode 71 are formed of an island type electrode made of a dot, a circle, a polygon, and the like, and generally mean a shape that does not extend to one side.

The operating voltage of the semiconductor light emitting device 1 is lowered due to the first ohmic electrode 81 and the second ohmic electrode 71. In the present disclosure, heights of the first and second

ohmic electrodes

81 and 71 may be minimized to increase the reflectance of the non-conductive reflecting film 91. As the heights of the first ohmic electrode 81 and the second ohmic electrode 71 decrease, the distortion of the non-conductive reflecting film 91 may be reduced, thereby decreasing the reflectance.

The third electrical connection 84 and the fourth electrical connection 74 penetrate through the insulating layer 95, and the first pad electrode 85 and the second pad electrode 75, the first connection electrode 83, and the first connection electrode 83 and the first connection electrode 83 and the first connection electrode 83 and the first connection electrode 83, respectively. The two connecting electrodes 73 are electrically connected to each other. In the present disclosure, the third electrical connection 84 is in electrical communication with the first pad electrode 85 and the first connection electrode 83, and the fourth electrical connection 74 is connected with the second pad electrode 75 and the second. The connection electrode 73 is in electrical communication. A plurality of third electrical connections 84 and fourth electrical connections 74 may be formed. For example, the number of the third electrical connection 84 and the fourth electrical connection 74 may be greater than the number of the first electrical connection 82 and the second electrical connection 72.

The first pad electrode 85 is electrically connected to the first connection electrode 83 through the third electrical connection 84 to supply electrons to the first semiconductor layer 30.

The second pad electrode 75 is electrically connected to the second connection electrode 73 through the fourth electrical connection 74 to supply holes to the second semiconductor layer 50.

The first pad electrode 85 and the second pad electrode 75 are electrodes for electrical connection with the external electrode, and may be eutectic bonded, soldered or wire bonded with the external electrode. The external electrode may be a conductive part provided in the sub-mount, a lead frame of the package, an electrical pattern formed on the PCB, and the like, and the external electrode may not be particularly limited in form. The first pad electrode 85 and the second pad electrode 75 are formed to have an area to some extent, so that they become heat dissipation passages.

In general, when the first ohmic electrode 81, the second ohmic electrode 71, the first connection electrode 83, the second connection electrode 73, and the like are formed in the semiconductor light emitting device, a plurality of metal layers may be used. It is composed. The lowermost layer should have high bonding strength and bonding strength, and materials such as Cr and Ti may be mainly used, and Ni, Ti, TiW, and the like may also be used. As the top layer, Au is used for wire bonding or for connection with external electrodes. In order to reduce the amount of Au and compensate for the relatively soft Au properties, Ni, Ti, TiW, W, or the like is used between the lowermost layer and the uppermost layer depending on the required specification, or when a high reflectance is required. , Al, Ag and the like are used.

When the electrode display unit 100 is interposed between the non-conductive reflecting film 91 and the insulating layer 95, the electrode display unit 100 displays the polarity of the first pad electrode 85 and the second pad electrode 75.

The electrode display unit 100 is positioned below at least one pad electrode of the first pad electrode 85 and the second pad electrode 75, and corresponds to the selected first pad electrode 85 and the second pad electrode 75. It is positioned on the same layer as the first connection electrode 83 or the second connection electrode 73. In this case, the electrode display unit 100 does not overlap the first connection electrode 83 or the second connection electrode 73.

In the present disclosure, the electrode display unit 100 corresponds to the second pad electrode 75, and the same layer as the second connection electrode 73 without overlapping the second connection electrode 73 under the second pad electrode 75. It can be located at On the contrary, the electrode display unit 100 does not overlap the first connection electrode 83 under the first pad electrode 85 in correspondence with the first pad electrode 85, and is the same layer as the first connection electrode 83. It can be located at

The electrode display unit 100 may include at least one hole, and may be formed in an island type shape including a dot, a circle, a rectangle, and a polygon. In the present disclosure, the electrode display unit 100 is illustrated to have a circular shape when it has three holes, but is not limited thereto.

The electrode display unit 100 may be formed to have a thickness and a size that do not affect the semiconductor light emitting device 1. Here, the size of the electrode display unit 100 is greater than the opening size of the second electrical connection 84 and the fourth electrical connection 74, the thickness of the electrode display unit 100 is the first connection electrode 83 and the first electrode. It is preferable to have the same thickness as the thickness of the two connection electrode 73.

The electrode display unit 100 is made of the same material as the first connection electrode 83 and the second connection electrode 73.

In this example, the first pad electrode 85 is connected to the first semiconductor layer 30 having a first conductivity, that is, an n-type polarity (eg, Si-doped GaN), and the second pad electrode 75 is formed of a first pad electrode 75. It is connected to the second semiconductor layer 50 (eg, Mg-doped GaN) having a second conductivity, that is, a p-type polarity.

In a flip chip in which the first pad electrode 85 and the second pad electrode 75 are provided on opposite sides of the plurality of semiconductor layers 30, 40, and 50 with respect to the non-conductive reflective film 91, Since the electrode display part 100 is positioned on the same layer as the second connection electrode 73 under the second pad electrode 75 when viewed in the direction of the substrate 10, the first pad electrode 85 has an n-type polarity. It can be confirmed that the second pad electrode 75 has a p-type polarity through the electrode display unit 100. In contrast, the polarities of the first pad electrode 85 and the second electrode 75 may be reversed.

Conventionally, grooves or notches have been formed in the edges of opposing first and second pad electrodes to identify the polarity of the electrodes. Therefore, when observing from the substrate side, it is difficult to distinguish the polarity of the electrode, and it is difficult to identify the presence or absence of grooves or notches.

However, when the electrode display unit 100 is formed on the non-conductive reflecting film 91, when viewed from the side of the substrate 10, the polarity of the first pad electrode 85 and the second electrode 75 has the electrode display unit ( 100) can be easily checked.

Looking at the manufacturing method of the semiconductor light emitting device 1 according to the present disclosure, first, the first semiconductor layer 30, the active layer 40, the second semiconductor layer 50, the current diffusion electrode 60 on the substrate 10 Eg, ITO is formed and mesa-etched to expose a portion of the first semiconductor layer 30 corresponding to the first electrical connection 73. Mesa etching may be performed before or after the current diffusion electrode 60 is formed. The current spreading electrode 60 can be omitted.

Next,

ohmic electrodes

71 and 81 are formed on the current diffusion electrode 60 and the exposed first semiconductor layer 30, respectively. Although the

ohmic electrodes

71 and 81 may be omitted, the

ohmic electrodes

71 and 81 may be provided to suppress an increase in operating voltage and to provide stable electrical contact.

In addition, before the current diffusion electrode 60 is formed, it may be considered to form a light absorption prevention film on the second semiconductor layer 50 corresponding to the ohmic electrode 81.

Next, a non-conductive reflecting film 91 is formed on the current spreading electrode 60. For example, the dielectric film 91b, the distributed Bragg reflector 91a, and the clad film 91c covering the conductive film 60 are formed. The dielectric film 91b or the clad film 91c may be omitted.

Next, a first electrical connection 82 and a second electrical connection 72 formed of openings in the non-conductive reflective film 91 are formed by dry etching or wet etching, or a combination thereof. The first electrical connection 82 and the second electrical connection 72 are formed to contact the first ohmic electrode 81 and the second ohmic electrode 71, respectively.

The first electrical connection 82 is formed up to the non-conductive reflective film 91, the second semiconductor layer 50, the active layer 40, and a portion of the first semiconductor layer 30. The second electrical connection 72 is formed to penetrate the non-conductive reflecting film 91 to expose a portion of the current spreading electrode 60.

The first electrical connection 82 and the second electrical connection 72 may be formed after the formation of the nonconductive reflecting film 91, but alternatively, a plurality of the first and second

electrical connections

82 and 72 may be formed before or after the formation of the nonconductive reflecting film 91. After the first electrical connection 82 is partially formed in the semiconductor layers 30, 40, and 50 of the semiconductor layer 30, the non-conductive reflective film 91 is formed to cover the first electrical connection 82, and then the non-conductive reflective film 91 is formed. The first electrical connection 82 may be formed through additional processing therethrough, and the second electrical connection 72 may be formed concurrently or with another process.

Next, the first connection electrode 83 and the second connection electrode 73 are formed on the nonconductive reflecting film 91. For example, the first connection electrode 83 and the second connection electrode 73 may be deposited using sputtering equipment, E-beam equipment, or the like. The first connection electrode 83 and the second connection electrode 73 may be formed using Cr, Ti, Ni, or an alloy thereof for stable electrical contact, and may include a reflective metal layer such as Al or Ag. .

The first connection electrode 83 may be formed to contact the first semiconductor layer 30 through the plurality of first electrical connections 82, and the second connection electrode 73 may connect the second electrical connection 72. It may be formed to contact the current diffusion electrode 60 through.

Next, the electrode display unit 100 is formed on the nonconductive reflecting film 91 corresponding to the

pad electrodes

85 and 75. The electrode display unit 100 is formed on the non-conductive reflective film 91 in which the first connection electrode 83 and the second connection electrode 73 are not formed corresponding to the

pad electrodes

85 and 75. That is, the electrode display unit 100 does not overlap with the first connection electrode 83 and the second connection electrode 73. For example, it may be formed inside the second connection electrode 73 as shown in FIG. 13 (a) or may be formed outside the first connection electrode 83 as shown in FIG. 13 (b). have. However, the present invention is not limited thereto, and the electrode display unit 100 may be positioned anywhere on the non-conductive reflective film 91 that does not overlap the first connection electrode 83 or the second connection electrode 73.

Alternatively, the electrode display unit 100 may be formed before forming the first connection electrode 83 and the second connection electrode 73. For example, it may be formed inside the second connection electrode 73 as shown in FIG. 14 (a) or may be formed outside the first connection electrode 83 as shown in FIG. 14 (b). have. However, the present invention is not limited thereto, and the electrode display unit 100 may be positioned anywhere on the non-conductive reflective film 91 that does not overlap the first connection electrode 83 or the second connection electrode 73.

Next, an insulating layer 95 is formed to cover the electrode display unit 100, the first connection electrode 83, and the second connection electrode 73. Representative material of the insulating layer 95 is SiO ₂ , without being limited thereto, SiN, TiO ₂ , Al ₂ O ₃ , Su-8 and the like may be used.

Next, a third electrical connection 84 and a fourth electrical connection 74 formed of openings in the insulating layer 95 are formed by dry etching or wet etching, or a combination thereof. The third electrical connection 84 and the fourth electrical connection 74 are formed to contact the first connection electrode 83 and the second connection electrode 73, respectively.

The third electrical connection 84 and the fourth electrical connection 74 may be formed after the insulating layer 95 is formed, or alternatively, may be formed before the insulating layer 95 is formed.

Next, the first pad electrode 85 and the second pad electrode 75 may be electrically connected to an external electrode (package, COB, submount, etc.) by a method such as stud bump, conductive paste, and eutectic bonding. have. In the case of eutectic bonding, it is important that the height difference between the first pad electrode 85 and the second pad electrode 75 is not large. According to the semiconductor light emitting device according to the present example, since the first pad electrode 85 and the second pad electrode 75 can be formed on the insulating layer 95 by the same process, there is almost no height difference between the two electrodes. Thus there is an advantage in the case of eutectic bonding. When the semiconductor light emitting device is electrically connected to the outside through utero bonding, the uppermost portions of the first pad electrode 85 and the second pad electrode 75 are Ute such as Au / Sn alloy and Au / Sn / Cu alloy. It may be formed of a tick bonding material.

17 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 100 may include a substrate 110, a plurality of

semiconductor layers

130, 140, and 150, a transparent conductive film 160, a first pad electrode 180, and a second pad electrode 170.

The buffer layer 120, the first semiconductor layer 130, the active layer 140, and the second semiconductor layer 150 are sequentially formed on the substrate 110. For example, semiconductor layers epitaxially grown on the substrate 110 are mainly grown by organometallic vapor phase growth (MOCVD), and each layer may further include sublayers as needed.

The substrate 110 is mainly sapphire, SiC, Si, GaN, etc., but may be in any form as long as the group III nitride semiconductor layer can be grown. The substrate 110 may be finally removed.

The plurality of

semiconductor layers

130, 140, and 150 may include a buffer layer 120 formed on the substrate 10, a first semiconductor layer 130 having a first conductivity (eg, Si-doped GaN), and a second different from the first conductivity. A conductive second semiconductor layer 150 (eg, Mg-doped GaN) and an active layer interposed between the first semiconductor layer 130 and the second semiconductor layer 150 to generate light through recombination of electrons and holes ( 140; for example, InGaN / (In) GaN multi-quantum well structure). Each of the semiconductor layers 130, 140, and 150 may be formed in multiple layers, and the buffer layer 20 may be omitted.

The first semiconductor layer 130 and the second semiconductor layer 150 are provided to have different conductivity, and their positions may be changed. In the present disclosure, the first semiconductor layer 130 is an n-type nitride semiconductor layer 130 (eg, an n-type GaN layer), and the second semiconductor layer 150 is a p-type nitride semiconductor layer 150 (eg, p-type GaN layer), for example.

The second semiconductor layer 150 and the active layer 140 are mesa-etched to expose a portion of the first semiconductor layer 130. Here, the order of mesa etching may be changed.

The transparent conductive film 160 performs a function of diffusing current to the second pad electrode 170 to improve uniformity of light. The transmissive conductive layer 160 is formed to cover most of the second semiconductor layer 150 except for the first pad electrode 180 formed through the mesa etching process. In particular, when the second semiconductor layer 150 is made of p-type GaN, the current spreading ability is inferior, and therefore, the transparent conductive film 160 is preferably formed.

Generally, the transparent conductive film is formed of one layer having the same thickness on the second semiconductor layer. When the light-transmissive conductive film is formed too thin, the driving voltage increases due to the current diffusion, and when the light-transmissive conductive film is formed too thick, the light extraction efficiency can be reduced by low transmittance, though it has a low sheet resistance.

In the present disclosure, the thickness of the light-transmitting doser film 160 may be differently formed so that current diffusion is easy and the light transmittance is improved regardless of the driving voltage. That is, the thickness of the transparent conductive film 160 positioned corresponding to the second pad electrode 170 may be greater than the thickness of the transparent conductive film 160 positioned on the second semiconductor layer 150. In the present disclosure, an area where the second pad electrode 170 is located is described as a first area A, and a remaining area where the second pad electrode 170 is not located is described as a second area B. FIG.

Specifically, the thickness T2 of the transparent conductive film 160 positioned in the first region A corresponding to the second pad electrode 170 may be formed on the second pad electrode 170 except for the first region A. FIG. It is preferable to be formed thicker than the thickness T1 of the transmissive conductive film 160 positioned in the second region B which does not correspond. For example, since the thickness T2 of the first region A may have a thickness that is at least two times greater than the thickness T1 of the second region B, the thickness T1 of the second region B may be It is preferably about 600 GPa, and the thickness T2 of the first region A is preferably about 1200 to 1800 GPa.

The transparent conductive layer 160 includes a first conductive layer 161 positioned on the second semiconductor layer 150 and a second conductive layer 162 positioned on the first conductive layer 161.

The first conductive layer 161 is entirely located in the first region A and the second region B and is formed of one layer.

The second conductive layer 162 is partially positioned only in the first region A, and is formed between the first conductive layer 161 and the second pad electrode 170.

It is preferable that the first conductive film 161 and the second conductive film 162 be made of the same material. For example, the first conductive layer 161 and the second conductive layer 162 may be formed of the same material as ITO and Ni / Au.

Although the thickness T1 of the first conductive film 161 preferably has the same thickness as the thickness T2 of the second conductive film 162, the thickness T2 of the second conductive film 162 is not limited thereto. It may have a larger or smaller thickness. For example, the thicknesses T1 and T2 of the first conductive film 161 and the second conductive film 162 are preferably about 600 kPa to 1200 kPa, respectively.

The width W2 of the second conductive layer 162 may be smaller than the width W1 of the first conductive layer 161 and may be the same as or wider than the width of the second pad electrode 170.

The first pad electrode 180 is formed on the first semiconductor layer 130 exposed by mesa etching, and the second pad electrode 170 is formed on the transparent conductive layer 160. In the present disclosure, the first pad electrode 180 is an n-side pad electrode 180 electrically connected to the first semiconductor layer 130, and the second pad electrode 170 is connected to the second semiconductor layer 150. For example, the n-side pad electrode 170 will be described. The first pad electrode 180 may correspond to the first electrode in the above description, and the second pad electrode 170 may correspond to the second electrode in the above description. In contrast, the first pad electrode 180 may correspond to the first electrode in the above description, and the second pad electrode 170 may correspond to the first electrode in the above description.

The first pad electrode 180 and the second pad electrode 170 may be formed by stacking nickel, chromium, and gold.

Hereinafter, a method of manufacturing the semiconductor light emitting device 100 will be described.

In the method of manufacturing the semiconductor light emitting device 100, first, the first buffer layer 120, the first semiconductor layer 130, the active layer 140, and the second semiconductor layer 150 are formed on the substrate 110. The second semiconductor layer 150 and the active layer 140 are etched in a mesa form to expose the first semiconductor layer 130. As a method of removing a plurality of semiconductor layers, a dry etching method, for example, an inductively coupled plasma (ICP) may be used.

Next, the first conductive layer 161 is formed on the entire surface of the second semiconductor layer 150 by using a sputtering method, an E-beam evaporation method, a thermal evaporation method, or the like.

Next, a part of the first conductive layer 161 corresponding to the portion where the second pad electrode 170 is to be formed is formed by using a sputtering method, an E-beam evaporation method, a thermal evaporation method, or the like. The second conductive film 162 is partially formed. Here, the second conductive layer 162 may be formed of the same material and the same thickness as the first conductive layer 161, but is not limited thereto.

Next, the first pad electrode 180 and the second pad electrode 170 are formed by using a method such as a sputtering method, an electron beam evaporation method, a thermal evaporation method, or the like.

Meanwhile, after the second conductive layer 162 is formed on the entire surface of the first conductive layer 161, the first region A corresponding to a portion where the second pad electrode 170 is to be formed through a separate etching process. ) Can only be located.

On the contrary, the light-transmissive conductive layer 160 is formed on the entire surface of the second semiconductor layer 150 to have the same thickness as the sum of the first conductive layer 161 and the second conductive layer 162. Through the process, a portion of the transparent conductive film 160 except for the portion corresponding to the second pad electrode 170 may be exposed. Accordingly, the thickness of the transparent conductive layer 160 exposed by etching may be smaller than the thickness of the transparent conductive layer 160 corresponding to the second pad electrode 170.

The order of the manufacturing method of the semiconductor light emitting device according to the present disclosure may be included in the scope of the present disclosure in a range that can be easily changed by those skilled in the art.

18 illustrates another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 200 includes a protective film 201.

The passivation layer 201 may include side and top surfaces of the semiconductor layers 230, 240, and 250, and the transparent conductive layer 260 and the first and

second pad electrodes

280 and 270 to protect the semiconductor light emitting device 200. It is formed to cover a portion of the top surface. The protective film 201 does not necessarily cover all regions on the first semiconductor layer 230 and the second semiconductor layer 250. The light-transmissive conductive film 260 includes a first conductive film 261 positioned on the second semiconductor layer 250 and a second conductive film 262 positioned on the first conductive film 261.

The protective film 201 may be formed of a material such as SiO ₂ , TiO ₂ , SiNx, DBR, or the like, and may be omitted.

The protective film 201 may be formed simultaneously with the second conductive film 262 of the transparent conductive film 260.

Except for the protective film 201 of FIG. 18, the semiconductor light emitting device 100 has the same characteristics as the semiconductor light emitting device 100 of FIG. 17.

19 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 300 includes a light absorption prevention film 390.

The transparent conductive film 360 covers the light absorption prevention film 390 and performs a function of diffusing current to the second pad electrode 370 to improve uniformity of light. The translucent conductive film 360 may include the first conductive film 361 disposed on the second semiconductor layer 350 and the light absorption prevention film 390, and the second conductive film 362 disposed on the first conductive film 361. ).

Accordingly, the light absorption prevention layer 390 is interposed between the first conductive layer 361 and the second semiconductor layer 350 of the transparent conductive layer 360. The light absorption prevention layer 390 is formed on a position corresponding to the second pad electrode 370, that is, on the second semiconductor layer 350 in the first region A. FIG.

The light absorption prevention layer 390 reflects some or all of the light generated from the active layer 340 to prevent light absorption from the transparent conductive layer 360. In addition, the light absorption prevention layer 390 may have a function of preventing current from flowing directly under the second pad electrode 370. The light absorption prevention layer 390 may be omitted.

The light absorption prevention layer 390 is a single layer (eg, SiO ₂ ), a multilayer (eg, Si0 ₂ / TiO ₂ / SiO ₂ ), a distributed Bragg reflector, or a single layer made of a light transmissive material having a lower refractive index than the second semiconductor layer 350. Or a combination of a layer and a distributed Bragg reflector. In addition, the light absorption prevention layer 390 may be made of a non-conductive material (eg, a dielectric film such as SiOx or TiOx).

Except for the light absorption prevention film 390 illustrated in FIG. 19, the semiconductor light emitting diode 100 has the same characteristics as the semiconductor light emitting device 100 illustrated in FIG. 17.

20 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 400 may include a light absorption prevention layer 490 and a light absorption blocking layer 492.

The transparent conductive film 460 covers the light absorption prevention film 490 and the light absorption blocking film 492, and performs a function of diffusing current to the second pad electrode 470 to improve uniformity of light. Here, the transparent conductive film 460 is positioned on the first conductive film 461 and the first conductive film 461 positioned on the second semiconductor layer 450, the light absorption prevention film 490, and the light absorption blocking film 492. The second conductive film 462 is included.

Accordingly, the light absorption prevention film 490 and the light absorption blocking film 492 are interposed between the first conductive film 461 and the second semiconductor layer 450.

The light absorption prevention film 490 is interposed between the first conductive film 461 and the second semiconductor layer 450. The light absorption prevention layer 490 is formed on the position corresponding to the second pad electrode 470, that is, on the second semiconductor layer 450 in the first region A. FIG.

The light absorption blocking film 492 is interposed between the first conductive film 461 and the light absorption prevention film 490. The light absorption blocking layer 492 is formed on a position corresponding to the second pad electrode 470, that is, on the light absorption prevention layer 490 in the first region A. FIG.

The light absorption blocking layer 492 blocks light that is not reflected by the light absorption prevention layer 490 and passes through the light absorption prevention layer 490. On the other hand, the light absorption blocking film 492 may also function as a branch electrode.

Accordingly, in the present disclosure, the light absorption blocking film 492 is disposed between the first conductive film 461 and the light absorption preventing film 490 to block light absorption generated from the transparent conductive film 460 to extract light from the semiconductor light emitting device. It is possible to improve the extraction efficiency.

The light absorption barrier layer 492 may be formed of a material different from that of the light absorption barrier layer 490.

The light absorption barrier layer 492 has a high reflectivity and a high reflectivity and a good electrical contact. For example, the metallic material may be silver (Ag), aluminum (Al), or distributed Bragg reflector (DBR). Bragg Reflector), highly reflective white reflector, and the like. However, aluminum (Al) is preferred in view of cost and efficiency.

When the light absorption prevention film 490 is made of SiOx and the light absorption blocking film 492 is made of aluminum (Al), the manufacturing cost can be reduced while increasing the bonding force.

The thickness T3 of the light absorption prevention film 490 and the thickness T4 of the light absorption blocking film 492 are preferably formed to be the same. However, the present invention is not limited thereto, and the thickness T3 of the light absorption prevention layer 490 may be larger or smaller than the thickness T4 of the light absorption blocking layer 492.

In this example, the thickness T3 of the light absorption prevention film 490 and the thickness T4 of the light absorption blocking film 492 are preferably about 1000 GPa or more and about 6000 GPa or less.

When the thicknesses T3 and T4 of the light absorption prevention film 490 and the light absorption blocking film 492 are 1000 Å or less, the thickness is too thin to prevent the light absorption and blocking function smoothly, and the light absorption prevention film 490 And when the thickness (T3, T4) of the light absorption blocking film 492 is 6000 Å or more, it may be difficult to deposit the transparent conductive film 460 deposited on the light absorption blocking film 492.

The light absorption prevention film 490 and the light absorption blocking film 492 are formed to correspond to the second pad electrode 470. The light absorption prevention layer 490 and the light absorption blocking layer 492 may be formed in an island shape under the second pad electrode 470, but are not limited thereto.

The light absorption prevention layer 490 may have a width W3 equal to or wider than that of the second pad electrode 470.

The width W4 of the light absorption blocking film 492 may be the same as or smaller than the width W3 of the light absorption blocking film 490. In addition, the width W4 of the light absorption blocking layer 492 may be the same as or wider than the width of the second pad electrode 470.

When the widths W3 and W4 of the light absorption prevention film 490 and the light absorption blocking film 492 are formed to be wider than the width of the second pad electrode 470, a region in which current is blocked may become too large to reduce the efficiency of the device. In addition, light generated by the active layer 440 and incident on the light absorption prevention layer 490 and the light absorption blocking layer 492 may be reflected back toward the plurality of semiconductor layers more than necessary. On the contrary, when the widths W3 and W4 of the light absorption prevention film 490 and the light absorption blocking film 492 are smaller than the width of the second pad electrode 470, the light incident to the second pad electrode 470 is emitted. It does not reflect effectively. Accordingly, the widths W3 and W4 of the light absorption prevention film 490 and the light absorption blocking film 492 may be the same as or wider than the width of the second pad electrode 470.

Except for the light absorption prevention film 490 and the light absorption blocking film 492 illustrated in FIG. 20, the semiconductor light emitting device 100 has the same characteristics as the semiconductor light emitting device 100 illustrated in FIG. 17.

21 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 500 includes a light absorption blocking layer 590 and a light absorption blocking layer 592 including a metal layer 5920 and a non-conductive layer 5921.

The light absorption prevention layer 590 is positioned on the second semiconductor layer 550, and the light absorption blocking layer 592 is positioned between the light absorption prevention layer 590 and the light transmission conductive layer 560. Here, the transparent conductive film 560 is positioned on the first conductive film 561 and the first conductive film 561 on the second semiconductor layer 550, the light absorption prevention film 590, and the light absorption blocking film 592. A second conductive film 562 is included.

The metal layer 5920 is positioned on an upper surface of the light absorption prevention layer 590, and may be formed of a metallic material having high reflectance and excellent electrical contact to block light absorption while increasing bonding force with the light absorption prevention layer 590. For example, the metal layer 5920 may be made of silver (Ag), aluminum (Al), a distributed Bragg reflector (DBR), a highly reflective white reflector, or the like. However, aluminum (Al) is preferred in view of cost and efficiency.

The metal layer 5920 may be formed on the light absorption prevention layer 590 by using plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), sputtering, e-beam evaporation, thermal evaportation, or the like.

The non-conductor layer 5921 is positioned on the metal layer 5920, that is, interposed between the metal layer 5920 and the first conductive film 561 of the transparent conductive film 560.

The nonconductive layer 5921 may be formed by anodizing the surface of the metal layer 5920 or by depositing an insulating material on the surface of the metal layer 5920.

For example, when the material of the metal layer 5920 is made of Al and the metal layer 5920 is surface-treated through anodizing, the nonconductive layer 5921 may be made of an aluminum oxide film (Al ₂ O ₃ ). In addition, the insulator layer 5921 may be any one of SiO ₂ , TiO ₂ , SiN, SiON, Al ₂ O _3, and Ta ₂ O ₅ films formed through deposition.

The nonconductive layer 5921 is positioned between the metal layer 5920 and the first conductive film 561 of the transparent conductive film 560 to electrically insulate the transparent conductive film 560 to maintain a stable insulating state. In addition, the insulator layer 5921 may improve current spreading while maintaining a stable state of insulation between the metal layer 5920 and the transparent conductive film 560.

It has the same characteristics as the semiconductor light emitting device 100 of FIG. 17 except for the light absorption blocking film 590 and the light absorption blocking film 592 including the metal layer 5920 and the insulator layer 5921 shown in FIG. 21.

22 illustrates another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 600 includes a nonconductive reflecting film 602.

The non-conductive reflecting film 602 is a side surface and an upper surface of the etched and exposed

semiconductor layers

630, 640, 650, and the first conductive film 661 and the second conductive film 662 of the transparent conductive film 660. The first and

second pad electrodes

680 and 670 may be formed to cover portions of the top surface of the first and

second pad electrodes

680 and 670. The non-conductive reflecting film 602 does not necessarily cover all regions on the first semiconductor layer 630 and the second semiconductor layer 650. The non-conductive reflecting film 602 functions as a reflecting film but is preferably formed of a light transmitting material to prevent absorption of light.

The nonconductive reflecting film 602 may be made of a single dielectric layer (eg, a transparent dielectric material such as SiOx, TiOx, Ta ₂ O ₅ , MgF ₂ ), or may have a multilayer structure. As an example of the multilayer structure, the non-conductive reflective film 602 may include a dielectric film sequentially stacked, a distributed Bragg reflector (eg, a DBR made of a combination of SiO ₂ and TiO ₂ ) and a clad film.

When the non-conductive reflecting film 602 is made of SiOx, since the non-conductive reflecting film 602 has a lower refractive index than the second semiconductor layer 650 (for example, GaN), light having an incident angle greater than or equal to a critical angle is provided in the plurality of

semiconductor layers

630, 640, and 650. Some reflections can be made to the side.

On the other hand, when the non-conductive reflecting film 91 is made of a distributed Bragg reflector (DBR: DBR made of a combination of SiO ₂ and TiO ₂ ), a greater amount of light may be applied to the plurality of

semiconductor layers

630, 640, and the like. 650) to the side.

Except for the non-conductive reflecting film 602 shown in FIG. 22, it has the same characteristics as the semiconductor light emitting device 100 shown in FIG.

24 and 25 illustrate an example of a semiconductor light emitting device according to the present disclosure.

FIG. 24 is a plan view, FIG. 25A is a sectional view taken along AA ′, and FIG. 25B is a detailed sectional view of A. FIG.

semiconductor layers

130, 140, and 150, a light absorption prevention film 190, a light absorption blocking film 192, a transparent conductive film 160, and a first pad electrode ( 180 and a second pad electrode 170. Hereinafter, the group III nitride semiconductor light emitting element will be described as an example.

Here, the group III nitride semiconductor light emitting device is a group III nitride of Al (x) Ga (y) In (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y = 1). Means a light emitting device such as a light emitting diode including a semiconductor layer, and additionally excludes the inclusion of a material consisting of elements of other groups such as SiC, SiN, SiCN, CN or a semiconductor layer made of these materials. no.

The plurality of

semiconductor layers

The second semiconductor layer 150 and the active layer 140 are mesa-etched to expose a portion of the first semiconductor layer 130. The order of mesa etching can be changed.

The transparent conductive layer 160 covers the light absorption barrier layer 190 and the light absorption barrier layer 192 and improves the uniformity of light by performing a function of diffusing current to the second pad electrode 170. The transmissive conductive layer 160 is formed to cover most of the second semiconductor layer 150 except for the first pad electrode 180 formed through the mesa etching process. Therefore, the light absorption prevention film 190 and the light absorption blocking film 192 are interposed between the transparent conductive film 160 and the second semiconductor layer 150. In particular, when the second semiconductor layer 150 is made of p-type GaN, the current spreading ability is inferior, and therefore, the transparent conductive film 160 is preferably formed. For example, the transparent conductive layer 160 may be formed of a material such as ITO or Ni / Au.

When the light-transmissive conductive layer 160 is formed too thin, the driving voltage is increased due to the current diffusion, and when the light-transmissive conductive layer 160 is formed too thick, light extraction efficiency may be reduced due to light absorption.

The first pad electrode 180 is formed on the first semiconductor layer 130 exposed by mesa etching, and the second pad electrode 170 is formed on the transparent conductive layer 160. In the present disclosure, the first pad electrode 180 is an n-side pad electrode 180 electrically connected to the first semiconductor layer 130, and the second pad electrode 170 is connected to the second semiconductor layer 150. For example, the n-side pad electrode 170 will be described.

The light absorption prevention layer 190 is formed on the second semiconductor layer 150 corresponding to the second pad electrode 170.

The light absorption prevention layer 190 reflects some or all of the light generated from the active layer 140 to prevent light absorption from the transmissive conductive layer 160. In addition, the light absorption prevention layer 190 may have a function of preventing current from flowing directly under the second pad electrode 170. The light absorption prevention layer 190 may be omitted.

The light absorption prevention layer 190 may be formed of a single layer (eg, SiO ₂ ), a multilayer (eg, Si0 ₂ / TiO ₂ _/ SiO ₂ ), a distributed Bragg reflector, or a single layer of a light transmissive material having a lower refractive index than the second semiconductor layer 150. Or a combination of a layer and a distributed Bragg reflector. In addition, the light absorption prevention layer 190 may be made of a non-conductive material (eg, a dielectric film such as SiOx or TiOx).

The light absorption blocking layer 192 is formed on the light absorption prevention layer 190 in correspondence with the second pad electrode 170. That is, it is positioned between the transparent conductive film 160 and the light absorption prevention film 190.

The light absorption blocking layer 192 blocks light that is not reflected by the light absorption prevention layer 190 and passes through the light absorption prevention layer 190. Meanwhile, the light absorption blocking layer 192 may also function as a branch electrode.

Conventionally, only the light absorption prevention film is positioned between the transparent conductive film and the plurality of semiconductor layers. Some of the light generated from the active layer is reflected by the anti-reflective film, and the remaining non-reflected light is first absorbed by the transmissive conductive film through the anti-reflective film, and the remaining light is primarily reflected back by the pad electrode. After the second absorption in the light-transmissive conductive film is passed through the light absorption prevention film and re-incident into a plurality of semiconductor layers. Accordingly, light efficiency extraction could be reduced.

Accordingly, in the present disclosure, the light absorption blocking layer 192 is disposed between the light transmissive conductive layer 160 and the light absorption prevention layer 190, thereby blocking light absorption generated from the light transmissive conductive layer 160 to thereby extract light efficiency of the semiconductor light emitting device. (extraction efficiency) can be improved.

The light absorption blocking layer 192 may be formed of a material different from that of the light absorption blocking layer 190.

The light absorption blocking layer 192 has a high reflectivity and is highly reflective and has excellent electrical contact. For example, the metallic material may be silver (Ag), aluminum (Al), or distributed Bragg reflector (DBR). Bragg Reflector), highly reflective white reflector, and the like. However, aluminum (Al) is preferred in view of cost and efficiency.

When the light absorption prevention layer 190 is made of SiOx and the light absorption blocking layer 192 is made of aluminum (Al), the manufacturing cost may be reduced while increasing the bonding force.

Referring to FIG. 25B, the light absorption prevention layer 190 is formed to have a first thickness T1, and the light absorption blocking layer 192 is formed to have a second thickness T2.

The first thickness T1 of the light absorption prevention film 190 and the second thickness T2 of the light absorption blocking film 192 are preferably formed to be the same. However, the present invention is not limited thereto, and the first thickness T1 of the light absorption prevention layer 190 may be larger or smaller than the second thickness T2 of the light absorption blocking layer 192.

In this example, the first thickness T1 of the light absorption prevention film 190 and the second thickness T2 of the light absorption blocking film 192 are preferably about 1000 kPa or more and about 6000 kPa or less.

When the first and second thicknesses T1 and T2 are 1000 μs or less, the thickness is too thin to prevent the function of preventing and blocking light absorption, and when the first and second thicknesses T1 and T2 are 6000 μs or more. Deposition of the transparent conductive film 160 deposited on the light absorption blocking layer 192 may be difficult.

The light absorption prevention layer 190 and the light absorption blocking layer 192 are formed to correspond to the second pad electrode 170. The light absorption prevention layer 190 and the light absorption blocking layer 192 may be formed in an island shape under the second pad electrode 170, but are not limited thereto.

The light absorption prevention layer 190 may be formed to have a first width W1 and may be formed to be the same as or wider than the width of the second pad electrode 170.

The light absorption blocking layer 192 may be formed to have a second width W1, and may be formed to be the same as or smaller than the first width W1 of the light absorption prevention layer 190. In addition, the light absorption blocking layer 192 may be formed to be the same as or wider than the width of the second pad electrode 170.

When the first and second widths W1 and W2 of the light absorption prevention film 190 and the light absorption blocking film 192 are formed to be wider than the width of the second pad electrode 170, the area where the current is cut off becomes too large. Efficiency may be reduced, and light generated in the active layer 140 and incident on the light absorption prevention layer 190 and the light absorption blocking layer 192 may be reflected back toward the plurality of semiconductor layers more than necessary. On the contrary, when the first and second widths W1 and W2 of the light absorption prevention layer 190 and the light absorption blocking layer 192 are smaller than the width of the second pad electrode 170, the second pad electrode 170 may be formed. It does not reflect light incident to it effectively. Accordingly, the first and second widths W1 and W2 of the light absorption blocking layer 190 and the light absorption blocking layer 192 may be the same as or wider than the width of the second pad electrode 170.

Next, a second pad electrode 170 corresponding to a portion where the second pad electrode 170 is to be formed by using plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), sputtering, e-beam evaporation, thermal evaportation, or the like. The light absorption prevention layer 190 is formed on a portion of the semiconductor layer 150.

Next, a light absorption blocking layer 192 is formed on the light absorption prevention layer 190 by using plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), sputtering, e-beam evaporation, and thermal evaportation. .

In this case, the light absorption prevention layer 190 and the light absorption blocking layer 192 may be formed at the same time.

Next, using the sputtering method, the E-beam evaporation method, the thermal evaporation method, and the like, as shown in FIGS. 24 and 25 (a), almost the entire surface of the second semiconductor layer 150 is used. And a light transmissive conductive layer 160 on the light absorption preventing layer 190 and the light absorption blocking layer 192.

26 illustrates another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 200 includes a protective film 201.

second pad electrodes

280 and 270 to protect the semiconductor light emitting device 200. It is formed to cover a portion of the top surface. The protective film 201 does not necessarily cover all regions on the first semiconductor layer 230 and the second semiconductor layer 250.

The protective film 201 may be formed simultaneously with the transparent conductive film 260.

Except for the protective film 201 shown in FIG. 26, it has the same characteristics as the semiconductor light emitting device 100 shown in FIGS.

27 is a view showing another example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 300 includes a light absorption blocking layer 392 including a metal layer 3920 and a non-conductive layer 3921.

The metal layer 3920 is positioned on an upper surface of the light absorption prevention layer 390, and may be formed of a metallic material having high reflectance and excellent electrical contact to block light absorption while increasing bonding strength with the light absorption prevention layer 390. For example, the metal layer 392 may be made of silver (Ag), aluminum (Al), a distributed Bragg reflector (DBR), a highly reflective white reflector, or the like. However, aluminum (Al) is preferred in view of cost and efficiency.

The metal layer 3920 may be formed on the light absorption prevention layer 390 using Plasma Enhanced Chemical Vapor Deposition (PECVD), Low Pressure Chemical Vapor Deposition (LPCVD), sputtering, E-beam evaporation, thermal evaportation, or the like.

The insulator layer 3921 is positioned on the metal layer 3920, that is, interposed between the metal layer 3920 and the transparent conductive film 360.

The nonconductive layer 3921 may be formed by anodizing the surface of the metal layer 3920 or by depositing an insulating material on the surface of the metal layer 3920.

For example, when the material of the metal layer 3920 is made of Al and the metal layer 3920 is surface-treated through anodizing, the nonconductive layer 3921 may be made of aluminum oxide film (Al 2 O 3). In addition, the insulator layer 3921 may be any one of SiO ₂ , TiO ₂ , SiN, SiON, Al ₂ O _3, and Ta ₂ O ₅ films formed through deposition.

The nonconductive layer 3921 is positioned between the metal layer 3920 and the transparent conductive film 360 to electrically insulate the transparent conductive film 360 to maintain a stable insulating state. In addition, the insulator layer 3921 may improve current spreading while maintaining a stable state of insulation between the metal layer 3920 and the transparent conductive film 360.

Except for the light absorption barrier layer 392 including the metal layer 3920 and the nonconductive layer 3921 illustrated in FIG. 27, the semiconductor light emitting device 100 has the same characteristics as the semiconductor light emitting device 100 illustrated in FIGS. 24 and 25.

28 illustrates another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 400 includes a nonconductive reflecting film 402.

The non-conductive reflecting layer 402 is formed on side surfaces and top surfaces of the plurality of etched and exposed

semiconductor layers

430, 440, and 450, and a portion of the upper surface of the transparent conductive layer 460 and the first and

second pad electrodes

480 and 470. It is formed to cover. The non-conductive reflective film 402 does not necessarily cover all regions on the first semiconductor layer 430 and the second semiconductor layer 450. The non-conductive reflecting film 402 functions as a reflecting film but is preferably formed of a light transmitting material to prevent absorption of light.

The nonconductive reflective film 402 may be made of a single dielectric layer (eg, a transparent dielectric material such as SiOx, TiOx, Ta ₂ O ₅ , MgF ₂ ), or may have a multilayer structure. As an example of the multilayer structure, the non-conductive reflective film 402 may include a dielectric film sequentially stacked, a distributed Bragg reflector (eg, a DBR made of a combination of SiO ₂ and TiO ₂ ) and a clad film.

When the non-conductive reflective film 402 is made of SiOx, since the non-conductive reflective film 402 has a lower refractive index than the second semiconductor layer 450 (for example, GaN), light having an incident angle greater than or equal to a critical angle is provided in the plurality of

semiconductor layers

430, 440, and 450. Some reflections can be made to the side.

On the other hand, when the non-conductive reflecting film 91 is made of a distributed Bragg reflector (DBR: DBR of a combination of SiO ₂ and TiO ₂ ), a greater amount of light may be applied to the plurality of

semiconductor layers

430, 440, and the like. 450) can be reflected to the side.

Except for the non-conductive reflecting film 402 shown in FIG. 28, it has the same characteristics as the semiconductor light emitting device 100 shown in FIGS.

33 is a view for explaining an example of a semiconductor light emitting device according to the present disclosure, and FIG. 34 is a view for explaining an example of a cut plane taken along line A-A of FIG. 33.

The semiconductor light emitting device may include a first light emitting part 101 and a second light emitting part 102, a connection electrode 92, a reflective layer 91, a first electrode 80, and a second electrode formed to face each other on a substrate 10. 70, a first electrical connection 71, and a second electrical connection 81.

The first light emitting unit 101 and the second light emitting unit 102 each include a plurality of semiconductor layers in which the first semiconductor layer 30, the active layer 40, and the second semiconductor layer 50 are sequentially stacked.

The reflective layer 91 is formed to cover the first light emitting part 101, the second light emitting part 102, and the first light emitting part 101 and the second light emitting part 102. Reflect the generated light.

The first electrode 80 is provided to be in electrical communication with the first semiconductor layer 30 of the first light emitting part 101, and supplies one of electrons and holes.

The second electrode 70 is provided to be in electrical communication with the second semiconductor layer 50 of the second light emitting part 102, and supplies the other one of electrons and holes.

The first electrical connection 71 and the second electrical connection 81 pass through the reflective layer 91 and are in electrical communication with the plurality of semiconductor layers. In this example, the first electrical connection 81 is in electrical communication with the first semiconductor layer 30, and the second electrical connection 71 is in electrical communication with the second semiconductor layer 50.

The connection electrode 92 extends over the reflective layer 91 and electrically connects the first light emitting part 101 and the second light emitting part 102. Hereinafter, the group III nitride semiconductor light emitting element will be described as an example.

The semiconductor light emitting device may include a plurality of light emitting parts. In this example, the semiconductor light emitting element includes a first light emitting portion 101 and a second light emitting portion 102. As viewed from above, each of the first light emitting part 101 and the second light emitting part 102 has a rectangular shape having a long side formed in the long direction (x direction) and a short side formed in the short direction (y direction), for example, a rectangular shape. Have The long sides of each of the first light emitting units 101 and the second light emitting units 102 are arranged in one direction (y direction) to face each other. Therefore, the semiconductor light emitting device has a shape substantially similar in width and length as a whole.

The reflective layer 91 is formed to cover the plurality of semiconductor layers 30, 40, and 50, the first light emitting part 101, the second light emitting part 102, and the connection electrode 92.

In this example, the reflective layer 91 is insulative, and at least one of the first electrode 80 and the second electrode 70 is opposite to the plurality of semiconductor layers 30, 40, and 50 based on the reflective layer 91. A flip chip provided at the side and electrically connected to the plurality of semiconductor layers by an electrical connection passing through the reflective layer 91.

For example, the reflective layer 91 may be formed of an insulating material to reduce light absorption by the metal reflective film, and may preferably have a multilayer structure including a distributed bragg reflector (DBR) or an omni-directional reflector (ODR). An example of the multilayer structure includes a dielectric film 91b, a distributed Bragg reflector 91a, and a clad film 91c. The dielectric film 91b may reduce the height difference to stably manufacture the distributed Bragg reflector 91a and may also help to reflect light. SiO ₂ is a suitable material for the dielectric film 91b. The distributed Bragg reflector 91a is formed on the dielectric film 91b. The distribution Bragg reflector 91a may be composed of repeated stacking of materials having different reflectances, for example, SiO ₂ / TiO ₂ , SiO ₂ / Ta ₂ O ₂ , or SiO ₂ / HfO. SiO ₂ / TiO ₂ has good reflection efficiency, and for UV light, SiO ₂ / Ta ₂ O ₂ , or SiO ₂ / HfO will have good reflection efficiency. The clad film 91c may be made of a metal oxide such as Al ₂ O ₃ , a dielectric film 91b such as SiO ₂ , SiON, MgF, CaF, or the like. The distributed Bragg reflector 91a has a higher reflectance as light closer to the vertical direction reflects approximately 99% or more.

In order for the reflective layer 91 to function well, each material layer having a multilayer structure must be formed to a specially designed thickness. The reflective layer 91 has portions where height differences occur in the reflective layer 91 due to the following structures (eg, ohmic electrodes, trenches between the light emitting parts, etc.). Due to the height difference, there is an area in which each material layer of the reflective layer 91 is hard to be formed in the designed thickness, and the reflection efficiency may be reduced in this area. The reflection efficiency may be lower than that of other parts between the light emitting parts. Therefore, forming as few metal layers between the light emitting portions as possible is preferable to reduce the light absorption loss by the metal.

The connection electrode 92 electrically connects the first light emitting part 101 and the second light emitting part 102 that face each other in the long direction (x direction). Part of the connection electrode 92 overlaps with each other between the first light emitting part 101 and the second light emitting part 102. That is, the first light emitting part 101 and the second light emitting part 102 are electrically connected to each other by the connection electrode 92.

One end of the connection electrode 92 is in electrical communication with the second semiconductor layer 50 between the second semiconductor layer 50 and the reflective layer 91, and the other end of the connection electrode 92 is the second semiconductor. The layer 50 and the active layer 40 are etched and in electrical communication with the exposed first semiconductor layer 30.

Since the connection electrode 92 is provided on the opposite side of the plurality of semiconductor layers 30, 40, and 50 with respect to the reflective layer 91, the reflective layer before the light generated in the active layer 40 impinges on the connection electrode 92. In (91) it can almost be reflected.

The width of the connection electrode 92 may be smaller than the width of the first light emitting part 101 and the second light emitting part 102, but is not limited thereto. In this example, the width of the connection electrode 92 is smaller than the width of the first light emitting part 101 and the second light emitting part 102, and between the first light emitting part 101 and the second light emitting part 102. It is preferable to form larger than the interval of. Therefore, since the distance between the first light emitting part 101 and the second light emitting part 102 can be minimized, the size of the semiconductor light emitting device can be reduced.

As such, the long side of each of the first light emitting part 101 and the second light emitting part 102 may face each other and minimize the distance from each other, thereby improving the uniformity of current spreading.

The connection electrode 92 may have the same length as that of the first light emitting part 101 and the second light emitting part 102, but is not limited thereto. In this example, the connection electrode 92 is illustrated to have a length shorter than the length of the first light emitting part 101 and the second light emitting part 102.

As such, the connection electrode 92 is formed to be elongated in the longitudinal direction (x direction) corresponding to the long sides of each of the first light emitting part 101 and the second light emitting part 102, thereby forming the first light emitting part 101 and The connection stability between the second light emitting units 102 may be further improved.

Therefore, the first light emitting part 101 and the second light emitting part 102 are connected in parallel in the long direction (x direction) by the connecting electrode 92 and are driven at a higher voltage than one light emitting part. .

Each of the first electrode 80 and the second electrode 70 is formed on the reflective layer 91 in correspondence with the first light emitting part 101 and the second light emitting part 102. The first electrode 80 is connected to the first electrical connection 81 of the first light emitting part 101, and the second electrode 70 is connected to the second electrical connection 71 of the second light emitting part 102. do.

The first electrical connection 81 penetrates the reflective layer 91 to electrically connect the first electrode 80 and the first semiconductor layer 30. The first ohmic electrode 82 may be interposed between the first electrical connection 81 and the first semiconductor layer 30 to reduce contact resistance and provide stable electrical connection. Preferably, a current diffusion electrode 60 (eg, ITO, Ni / Au) is formed between the second semiconductor layer 50 and the reflective layer 91. The current spreading electrode 60 can be omitted.

The second electrical connection 71 penetrates the reflective layer 91 to electrically connect the second electrode 70 and the second semiconductor layer 50. The second ohmic electrode 72 may be interposed to reduce contact resistance and to provide stable electrical connection between the second electrical connection 71 and the second semiconductor layer 50.

The first electrode 80 and the second electrode 70 are electrodes for electrical connection with the external electrode, and may also be eutectic bonded, soldered, or wire bonded with the external electrode. The external electrode may be a conductive part provided in the submount, a lead frame of the package, an electrical pattern formed on the PCB, and the like, and the external electrode may be any type of conductive wire independently of the semiconductor light emitting device. The first electrode 80 and the second electrode 70 are formed to have a certain area to be a heat dissipation passage.

Looking at the manufacturing method of the semiconductor light emitting device according to the present disclosure, first, the first semiconductor layer 30, the active layer 40, the second semiconductor layer 50, the current diffusion electrode 60 on the substrate 10; ITO) and mesa etching to expose a portion of the first semiconductor layer 30 corresponding to the first electrical connection 81. Mesa etching may be performed before or after the current diffusion electrode 60 is formed. The current spreading electrode 60 can be omitted. A process of electrically insulating the plurality of light emitting parts together with or separately from the mesa etching process may be performed so that each light emitting part may be electrically insulated from each other by a trench exposing the growth substrate 10.

Next,

ohmic electrodes

72 and 82 are formed on the current diffusion electrode 60 and the exposed first semiconductor layer 30, respectively. The

ohmic electrodes

72 and 82 may be omitted, but are preferably provided for suppressing an increase in operating voltage and for stable electrical contact. On the other hand, the connection electrode 92 is formed together with or separately from the formation of the

ohmic electrodes

72 and 82.

In addition, before the current diffusion electrode 60 is formed, it may be considered to form a light absorption prevention film on the second semiconductor layer 50 corresponding to the ohmic electrode 72.

Next, the reflective layer 91 is formed on the current spreading electrode 60. Thereafter, an opening is formed in the reflective layer 91, and the first electrical connection 81 and the second electrical connection 71 penetrate through the opening to contact the first ohmic electrode 82 and the second ohmic electrode 72, respectively. Is formed.

Next, the first electrode 80 and the second electrode 70 are formed to be connected to the first electrical connection 81 and the second electrical connection 71, respectively. The first and second

electrical connections

81 and 70 and the first and

second electrodes

80 and 70 may be formed separately, but may be integrally formed in one process.

In this way, the semiconductor light emitting device including the plurality of light emitting parts is manufactured by cutting the individual semiconductor light emitting devices including the plurality of light emitting parts on the wafer. In cutting, the scribing and / or breaking process may proceed, and a chemical etching process may be added.

35 is a diagram for explaining an example of a connection electrode.

The connection electrode 92 is formed in plural and includes a first connection electrode 92a, a second connection electrode 92b, and a third connection electrode 92c which are spaced apart in the longitudinal direction (x direction). In this example, the connection electrodes 92 are limited to three spaced apart locations, but the embodiment is not limited thereto.

The first connection electrode 92a, the second connection electrode 92b, and the third connection electrode 92c each have a first light emitting portion 101 and a second light emitting portion 102 facing each other in the long direction (x direction). Connect electrically. As such, the first light emitting part 101 and the second light emitting part 102 are connected in parallel in the long direction (x direction) by the connecting electrode 92 and are driven at a higher voltage than one light emitting part. do.

36 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. In this example, the semiconductor light emitting element includes a light absorption prevention film 41.

The light absorption prevention layer 41 may be provided between the second semiconductor layer 50 and the current diffusion electrode 60. The light absorption prevention layer 41 may be formed of SiO 2, TiO 2, or the like, and may have only a function of reflecting some or all of the light generated in the active layer 40, and may be configured to directly flow down from the second ohmic electrode 72. It may have only a function to prevent the flow of or may have both functions.

Except for the light absorption prevention film 41 shown in FIG. 36, it has the same characteristics as the semiconductor light emitting element shown in FIG.

37 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. In this example, the semiconductor light emitting element includes an insulating layer 35.

The insulating layer 35 may include the side surfaces of the first semiconductor layer 30 of the second light emitting unit 102, the exposed substrate 10, and the plurality of semiconductor layers 30, 40, and 50 of the first light emitting unit 101. Is formed on the side.

The insulating layer 35 is a passivation layer having transparency, and is deposited on the

etching portions

21 and 25 by using materials such as SiO ₂ , TiO ₂ , and Al ₂ O ₃ . The thickness of the deposition can be, for example, thousands of millimeters, but of course the thickness can be varied. In this example, the

edges

21 and 25 of the first light emitting part 101 and the second light emitting part 102 face each other between the first light emitting part 101 and the second light emitting part 102. And a plurality of light emitting portions are formed at high-voltage because the distance between the first light emitting portion 101 and the second light emitting portion 102 is narrow, as described above. In the semiconductor light emitting device operating as a), it is advantageous in terms of electrical insulation to form the insulating layer 35 as in this example. In addition, the insulating layer 35 may be formed to the etching portion 25 of the edge of the first light emitting portion 101 and the second light emitting portion 102 to further improve the reliability of electrical insulation.

Although not illustrated, the insulating layer 35 is formed on the second semiconductor layer 50 of the second light emitting part 102 in correspondence with the second ohmic electrode 72, and corresponds to the connection electrode 92. 1 may be formed on the second semiconductor layer 50 of the light emitting unit 101. Accordingly, the insulating layer 35 also functions as a light absorption prevention film. Of course, it may be considered to form a light absorption prevention film in a separate process from the insulating layer 35, in which case it is also possible to form a thicker insulating layer 35.

The connection electrode 92 intersects the insulating layer 35 between the first light emitting part 101 and the second light emitting part 102, and electrically connects the first light emitting part 101 and the second light emitting part 102. Connect with

The first light emitting part 101 and the second light emitting part 102 are trenched or removed as the plurality of semiconductor layers 30, 40, and 50 are removed (eg, mesa etching). ) Is formed.

Although the plurality of semiconductor layers 30, 40, and 50 may be removed from the

etching portions

21 and 25 to expose the substrate 10, the semiconductor layers 30, 40, and 50 may be exposed between the plurality of semiconductor layers 30, 40, and 50. Additional layers may be exposed. A plurality of semiconductor light emitting devices formed on the wafer are separated from the etching part 25 of the outer edges of the first light emitting part 101 and the second light emitting part 102 to be manufactured as individual semiconductor light emitting devices. In this example, when viewed from above, the first light emitting portion 101 and the second light emitting portion 102 have a substantially rectangular shape and are provided so that the edges face each other. A plurality of semiconductor layers 30, 40, and 50 are removed between the first light emitting part 101 and the second light emitting part 102 and the edges of the first light emitting part 101 and the second light emitting part 102.

Etch portions

21 and 25 may be exposed and the substrate 10 may be exposed. By the

etching parts

21 and 25, the first light emitting part 101 and the second light emitting part 102 are electrically isolated or insulated by themselves. Since the plurality of semiconductor layers 30, 40, and 50 become light emitting regions, it is desirable to reduce the reduction of the plurality of semiconductor layers 30, 40, and 50 due to the

etching portions

21 and 25. For the etch portion 25 of the rim needs a certain width. In this example, the width of the etching portion 21 between the first light emitting portion 101 and the second light emitting portion 102 is the etching portion 25 of the edge of the first light emitting portion 101 and the second light emitting portion 102. It is formed to be narrower than the width of), and the reduction of the plurality of semiconductor layers 30, 40, 50 is suppressed while securing margins of the edges. The width of the edge portion of the edge may mean the width of the edge portion of the plurality of semiconductor light emitting elements on the wafer, or may mean the edge portion 25 of the edge of the semiconductor light emitting element separated into individual elements.

Except for the

etching portions

21 and 25 and the insulating layer 35 shown in FIG. 37, the semiconductor light emitting device has the same characteristics as the semiconductor light emitting device shown in FIG.

38 is a view for explaining another example of the semiconductor light emitting device according to the present disclosure. In this example, the semiconductor light emitting device includes the first light emitting part 103 and the second light emitting part 104, the connection electrode 192, the reflective layer 191, the insulating layer 195, and the first light emitting part 103 formed to face each other on the substrate 110. 1 to 4

electrical connections

181, 183, 171, and 173, first and second intermediate connection layers 180 and 170, first pad electrodes 184, and second pad electrodes 174. Here, the insulating layer 195, the first intermediate connection layer 180, the second electrical connection 183, the first pad electrode 184, the second intermediate connection layer 170, and the first intermediate connection layer 180 disposed on the reflective layer 191 are formed. Except for the electrical connection 173 and the second pad electrode 174, the semiconductor light emitting device has the same characteristics as the semiconductor light emitting device illustrated in FIG. 34.

In this example, the first light emitting unit 103 and the second light emitting unit 104 are positioned on the reflective layer 191, and the first electrical connection 181, the third electrical connection 171, and the connection electrode 192 are disposed. Covering insulating layer 195. The insulating layer 195 may be made of SiO ₂ .

The first electrical connection 181 passes through the reflective layer 191 and is in electrical communication with the exposed first semiconductor layer 130. The third electrical connection 171 passes through the reflective layer 191 and is in electrical communication with the second semiconductor layer 150. The first ohmic electrode 182 may be interposed between the first electrical connection 181 and the first semiconductor layer 130 to reduce contact resistance and provide stable electrical connection, and the third electrical connection 171 and the second semiconductor may be interposed therebetween. The second ohmic electrode 172 may be interposed between the layers 150 to reduce contact resistance and provide stable electrical connection.

One end of the connection electrode 192 is in electrical communication with the second semiconductor layer 150 between the second semiconductor layer 150 and the reflective layer 191, and the other end of the connection electrode 192 is the second semiconductor. The layer 150 and the active layer 140 are etched in electrical communication with the exposed first semiconductor layer 130.

Each of the first pad electrode 184 and the second pad electrode 174 is formed on the insulating layer 195 corresponding to the first light emitting part 103 and the second light emitting part 104.

The first pad electrode 184 penetrates through the insulating layer 195 and is electrically connected to the first electrical connection 181 through the second electrical connection 183 to supply electrons to the first semiconductor layer 130.

The first intermediate connection layer 180 may be interposed between the second electrical connection 183 and the first electrical connection 181 to reduce contact resistance and provide stable electrical connection.

The second pad electrode 174 penetrates through the insulating layer 195 and is electrically connected to the third electrical connection 171 through the fourth electrical connection 173 to supply holes to the second semiconductor layer 150.

The second intermediate connection layer 170 may be interposed between the fourth electrical connection 173 and the second electrical connection 171 to reduce contact resistance and provide stable electrical connection.

Hereinafter, various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes A plurality of semiconductor layers having an active layer that generates light through recombination of the semiconductors; A reflection film formed on the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer; A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes; A second electrode part electrically connected to the second semiconductor layer and supplying the other one of electrons and holes; And an electrode display unit interposed between the plurality of semiconductor layers and the reflective film.

(2) A semiconductor light emitting element in which the electrode display portion does not overlap with the first electrode portion and the second electrode portion.

(3) The electrode display unit is a semiconductor light emitting element located between the first electrode portion and the second electrode portion.

(4) The semiconductor light emitting device comprising the same material as at least one of the first electrode portion and the second electrode portion.

(5) The semiconductor light emitting element having a size of the electrode display portion of 100 µm or less.

(6) The semiconductor light emitting element having a thickness of 5 μm or less of the electrode display portion.

(7) each of the first electrode portion and the second electrode portion includes a connecting electrode positioned between the reflective film and the insulating layer; Semiconductor light emitting device comprising a.

(8) a first electrode portion and a second electrode portion formed on the insulating layer, respectively, an upper electrode; Semiconductor light emitting device comprising a.

(9) A semiconductor light emitting element comprising a distributed Bragg reflector (DBR) as a non-conductive reflecting film.

(10) an insulating layer formed on the reflective film; Semiconductor light emitting device comprising a.

(11) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes A plurality of semiconductor layers having an active layer that generates light through recombination of the semiconductors; A non-conductive reflecting film formed over the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer; An insulating layer formed on the nonconductive reflecting film; A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes; A second electrode part electrically connected to the second semiconductor layer and supplying the other one of electrons and holes; And an electrode display disposed between the nonconductive reflecting film and the insulating layer.

(12) At least one of the first electrode portion and the second electrode portion includes: a connection electrode formed on the nonconductive reflecting film; A first electrical connection penetrating the non-conductive reflective film to electrically connect the connection electrode and the plurality of semiconductor layers; A pad electrode formed on the insulating reflective layer; And a second electrical connection connecting the pad electrode and the connection electrode to penetrate through the insulating reflective layer.

(13) A semiconductor light emitting element, wherein the electrode display portion is positioned under at least one pad electrode of a pad electrode of the first electrode portion and a pad electrode of the second electrode portion.

(14) A semiconductor light emitting element in which the electrode display portion is located on the same layer as the connection electrode.

15. A semiconductor light emitting element in which the electrode display portion does not overlap with the connection electrode.

(16) A semiconductor light emitting element in which the electrode display portion is formed larger than the opening of the second electrical connection.

(17) A semiconductor light emitting device comprising electrode holes in a plurality of holes.

(18) A semiconductor light emitting element in which the electrode display portion is made of islands such as circles, triangles, squares, and the like.

(19) A semiconductor light emitting element, wherein the first electrode portion and the second electrode portion are formed symmetrically with each other. In particular, the first electrode portion and the second electrode portion are symmetrically arranged around the connection electrode.

(20) A semiconductor light emitting device in which the nonconductive reflecting film includes a distributed Bragg reflector (DBR).

(21) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes A plurality of semiconductor layers having an active layer for generating light through recombination of and grown using a growth substrate; A first electrode and a second electrode supplying electrons and holes, comprising: a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; And a light-transmissive conductive film positioned on the second semiconductor layer, wherein the first thickness of the light-transmissive conductive film located in the first region corresponding to the second electrode is equal to that of the light-transmissive conductive film positioned in the second region except the first region. A semiconductor light emitting element thicker than the second thickness.

(22) A semiconductor light emitting device, wherein the first thickness of the first region has a thickness of at least two times or more than the second thickness of the second region.

(23) The light-transmissive conductive film includes: a first conductive film which is entirely formed in the first region and the second region and formed of one layer; And a second conductive film partially positioned in the second region and formed between the second electrode and the first conductive film.

(24) A semiconductor light emitting element, wherein the first conductive film and the second conductive film are formed of the same material and the same thickness.

The width of the second conductive film is smaller than the width of the first conductive film.

(26) A semiconductor light emitting element, wherein the width of the second conductive film is equal to or wider than that of the second electrode.

(27) a light absorption prevention film interposed between the second semiconductor layer and the transparent conductive film; wherein the light absorption prevention film is located in the first region.

(28) a light absorption blocking film interposed between the light absorption prevention film and the transparent conductive film; wherein the light absorption blocking film is positioned in the first region.

(29) The light absorption prevention film and the light absorption blocking film are semiconductor light emitting devices made of different materials.

(30) A semiconductor light emitting device comprising: a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and interposed between the first semiconductor layer and the second semiconductor layer and having electrons and holes A plurality of semiconductor layers having an active layer for generating light through recombination of and grown using a growth substrate; A first electrode and a second electrode supplying electrons and holes, comprising: a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; A translucent conductive film on the second semiconductor layer; A light absorption prevention film interposed between the second semiconductor layer and the transparent conductive film; And a light absorption blocking layer interposed between the light absorption prevention film and the light-transmitting conductive film, wherein the light absorption prevention film and the light absorption blocking film are made of different materials.

The first electrode may correspond to the first pad electrode in the above description, and the second electrode may correspond to the second pad electrode in the above description. In contrast, the first pad electrode may correspond to the first electrode in the above description, and the second pad electrode may correspond to the first electrode in the above description.

The light absorption barrier may also function as a branch electrode.

The light absorption prevention film is a semiconductor light emitting element comprising at least one of SiO ₂ , SiN, AlO _x , SiON, and TiO ₂ .

(32) The light absorption blocking film is a semiconductor light emitting device comprising at least one of aluminum (Al), silver (Ag), a distributed Bragg reflector (DBR) and a highly reflective white reflecting material.

(33) A semiconductor light emitting element in which the thickness of the absorption prevention film is the same as that of the light absorption blocking film.

(34) The semiconductor light emitting device having a thickness of light absorption preventing film and light absorption blocking film of about 1000 GPa or more.

35. A semiconductor light emitting device, wherein the light absorption prevention film and the light absorption blocking film are positioned corresponding to the second electrode.

(36) The light absorption blocking film is a semiconductor light emitting device which is formed to be equal to or wider than the width of the second electrode.

(37) The light absorption prevention film is a semiconductor light emitting element formed with the same or wider width of the light absorption blocking film.

The light absorption prevention film and the light absorption blocking film are formed in an island shape.

(39) The light absorption blocking film further comprises a non-conductive layer on the surface in contact with the second electrode.

(40) A semiconductor light emitting device comprising: a first light emitting portion and a second light emitting portion formed in a longitudinal direction, a first semiconductor layer having a first conductivity, an active layer for generating light through recombination of electrons and holes, and a first conductivity A plurality of semiconductor layers in which a second semiconductor layer having a second conductivity different from the first semiconductor layer is sequentially stacked; A connection electrode formed in a long direction and electrically connecting the first light emitting part and the second light emitting part; A reflective layer formed to cover the first light emitting part, the second light emitting part, and the connection electrode, and reflecting light generated by the active layer; A first electrode part provided to be in electrical communication with the first semiconductor layer of the first light emitting part and supplying one of electrons and holes; And a second electrode part provided to be in electrical communication with the second semiconductor layer of the second light emitting part and supplying the other one of electrons and holes, wherein the connection electrode is partially connected to the first light emitting part and the second light emitting part. A semiconductor light emitting device which is positioned overlapping.

The connection electrode has a length equal to or shorter than a length of at least one of the first light emitting part and the second light emitting part.

42. A semiconductor light emitting device comprising a plurality of connection electrodes, wherein the plurality of connection electrodes have a length shorter than at least one of the first and second light emitting parts, and are spaced apart from each other in the longitudinal direction.

The connecting electrode electrically connects the first semiconductor layer and the second semiconductor layer of the first light emitting part and the second light emitting part to face each other.

(44) The semiconductor light emitting element is a flip chip, wherein the first electrode portion comprises: a first electrode formed on the reflective layer of the first light emitting portion; And a first electrical connection penetrating the reflective layer to electrically connect the first semiconductor layer and the first electrode of the first light emitting part, wherein the second electrode part comprises: a second electrode formed on the reflective layer of the second light emitting part; And a second electrical connection penetrating the reflective layer to electrically connect the second semiconductor layer and the second electrode of the second light emitting unit.

An insulating layer formed on the reflective layer, wherein the first electrode part comprises: a first intermediate connection layer formed on the reflective layer of the first light emitting part; A first electrical connection penetrating the reflective layer to electrically communicate the first semiconductor layer and the first intermediate connection layer of the first light emitting part; A first pad electrode formed on the insulating layer of the first light emitting part; And a second electrical connection penetrating the insulating layer to electrically connect the first intermediate connection layer and the first pad electrode.

A second intermediate connecting layer formed on the reflective layer of the second light emitting part; A third electrical connection penetrating the reflective layer to electrically connect the second semiconductor layer and the second intermediate connection layer of the second light emitting part; A second pad electrode formed on the insulating layer of the second light emitting part; And a fourth electrical connection penetrating through the insulating layer to electrically connect the second intermediate connection layer and the second pad electrode.

(46) A semiconductor light emitting device, wherein the insulating layer comprises SiO ₂ , and the reflective layer is insulating and includes one of a distributed Bragg reflector and an Omni-Directional Reflector (ODR).

According to one semiconductor light emitting device according to the present disclosure, the polarity of each electrode may be easily displayed using a separate electrode display unit without forming a groove or notch to display the polarity of the electrode.

According to the semiconductor light emitting device according to the present disclosure, the process can be simplified by forming an island type electrode display unit in the shape of the connection electrode without providing a separate electrode display unit.

According to the present disclosure, the thickness of the transparent conductive film positioned in correspondence with the electrode is made thicker than the thickness of other portions, so that the current spreading can be smoothly performed without reducing the extraction efficiency.

Therefore, since the current is smoothly spread, the light uniformity is improved and the light transmittance is increased to improve the light extraction efficiency of the semiconductor light emitting device.

According to the present disclosure, by forming a light absorption prevention film having different materials from each other into a double layer, it is possible to prevent light from being absorbed to the pad electrode side, thereby reducing the light absorption amount.

In addition, since a light absorption prevention film having a high reflectance is further formed under the pad electrode, light absorption is reduced, thereby improving light extraction efficiency of the semiconductor light emitting device.

In addition, since the non-conductive layer is positioned between the pad electrode and the light absorption prevention film, it is possible to maintain the insulating state stably and improve current spreading.

According to the present disclosure, by connecting a plurality of light emitting parts formed to face each other in the longitudinal direction in the same longitudinal direction, the stability of the connection can be improved.

According to the present disclosure, by connecting a plurality of light emitting units in the long direction, the uniformity of current spreading can be further improved.

Claims

In a semiconductor light emitting device,

A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer and generating light through recombination of electrons and holes A plurality of semiconductor layers having;

A reflection film formed on the plurality of semiconductor layers to reflect light generated in the active layer toward the first semiconductor layer;

A first electrode part electrically connected to the first semiconductor layer and supplying one of electrons and holes;

A second electrode part electrically connected to the second semiconductor layer and supplying the other one of electrons and holes; And

A semiconductor light emitting device comprising an electrode display unit interposed between a plurality of semiconductor layers and a reflective film.
The method of claim 1,

The electrode display unit does not overlap the first electrode unit and the second electrode unit.
The method of claim 1,

The electrode display unit is a semiconductor light emitting element positioned between the first electrode portion and the second electrode portion.
The method of claim 1,

The electrode display unit is a semiconductor light emitting device made of the same material as at least one of the first electrode portion or the second electrode portion.
The method of claim 1,

A semiconductor light emitting element having a size of an electrode display portion of 100 μm or less.
The method of claim 1,

The thickness of the electrode display unit is a semiconductor light emitting element of 5㎛ or less.
The method of claim 1,

Each of the first electrode part and the second electrode part may include a connection electrode positioned between the reflective film and the insulating layer; Semiconductor light emitting device comprising a.
The method of claim 1,

A first electrode portion and a second electrode portion formed on the insulating layer, respectively; Semiconductor light emitting device comprising a.
The method of claim 1,

The reflective film is a non-conductive reflecting film, and includes a distributed Bragg reflector (DBR).
The method of claim 1,

An insulating layer formed on the reflective film; Semiconductor light emitting device comprising a.