WO2018055215A1 - Atomic layer deposition chamber - Google Patents

Atomic layer deposition chamber Download PDF

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Publication number
WO2018055215A1
WO2018055215A1 PCT/ES2016/070663 ES2016070663W WO2018055215A1 WO 2018055215 A1 WO2018055215 A1 WO 2018055215A1 ES 2016070663 W ES2016070663 W ES 2016070663W WO 2018055215 A1 WO2018055215 A1 WO 2018055215A1
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WO
WIPO (PCT)
Prior art keywords
chamber
deposition
atomic layers
lid
layer deposition
Prior art date
Application number
PCT/ES2016/070663
Other languages
Spanish (es)
French (fr)
Inventor
Mato Knez
Mikel BELTRÁN
David TALAVERA EGUIZÁBAL
Mercedes VILA JUÁREZ
Original Assignee
Cic Nanogune
Coating Technologies S.L.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cic Nanogune, Coating Technologies S.L. filed Critical Cic Nanogune
Priority to PCT/ES2016/070663 priority Critical patent/WO2018055215A1/en
Priority to ES201990026A priority patent/ES2712868B1/en
Priority to CN201680089470.7A priority patent/CN109790619A/en
Publication of WO2018055215A1 publication Critical patent/WO2018055215A1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow

Definitions

  • the present invention relates to a chamber for deposition of atomic layers ("Atomic Layer Deposition" - ALD, in English), of special application in nanotechnology. It also refers to a device for depositing atomic layers, comprising a chamber for depositing atomic layers of the invention.
  • ALD atomic layers
  • An example of an ALD process includes the sequential introduction of gas pulses.
  • a cycle for the sequential introduction of gas pulses may contain a pulse of a first reactive gas, followed by a pulse of a purge gas and / or a pump evacuation, followed by a pulse of a second reactive gas , and followed by an impulse of a purge gas and / or an evacuation of the pump.
  • the sequential introduction of the individual pulses of the first reagent and the second reagent can result in self-limiting alternating absorption of monolayers of the reactants on the surface of the substrate and, therefore, form a monolayer of material for each cycle.
  • the cycle can be repeated to a desired thickness of the deposited material.
  • a pulse of a purge gas and / or an evacuation of the pump between the pulses of the first reactive gas and the pulses of the second reactant gas serves to reduce the likelihood of gas phase reactions of the reactants due to excess amounts of the reactants. reagents that remain in the chamber.
  • the object of the present invention is, therefore, to provide a chamber for deposition of atomic layers that solves the drawbacks mentioned in the prior art cameras.
  • the invention provides a chamber for deposition of atomic layers comprising a chamber body and a chamber lid, and, in addition, at least one separation plate delimiting different interior volumes in the body of the chamber, each of which has these interior volumes an entrance and an exit.
  • the configuration of the camera for depositing atomic layers of the invention allows the user to easily change the volume of the camera depending on the shape or size of the substrates that must be coated. Therefore, it allows the same user to perform the ALD process for a wide range of substrate materials without being limited to substrates of a certain size.
  • the chamber therefore, has a fixed main volume, which can be reduced conveniently with the separation plates, and the appropriate inputs and outputs can be used according to the volumes used.
  • Figure 1 shows a cross-sectional view of the chamber for deposition of atomic layers of the invention.
  • Figure 2 shows a front view of the chamber for deposition of atomic layers of the invention.
  • Figure 3 shows another cross-sectional view of the chamber for deposition of atomic layers of the invention.
  • Figure 4 shows a side view of the chamber for deposition of atomic layers of the invention.
  • Figure 5 shows a perspective view of the body of the chamber for deposition of atomic layers of the invention.
  • Figures 1 to 4 depict several views of the chamber 1 for deposition of atomic layers of the invention.
  • a chamber 1 for depositing atomic layers with a body 2 of the chamber, a cover 3 of the chamber and three interior volumes 5, these inner volumes 5 being separated by two intermediate separation plates 4 .
  • Each of the volumes 5 has an inlet 6 and an outlet 7 (located laterally in Figures 2 and 3), where the corresponding tubes will be connected.
  • the embodiment of said figures presents internal volumes 5 of cylindrical shape and staggered, of decreasing diameter downwards.
  • the body 2 of the chamber (also shown in Figure 5) has two steps 8, each of these steps 8 being located in the separation between two consecutive interior volumes 5.
  • Figure 4 shows that in the upper part of the chamber 1 there is a support 9 to which the lid 3 of the chamber can be detachably coupled.
  • the support 9 of the lid 3 allows the modular and simple interchangeability of the different lids 3 that can be attached to the chamber 1: conventional lid to perform thermal deposition processes of atomic layers; plasma reactor lid, for PEALD ("Plasma Enhanced ALD"); lid with electrical and mechanical feeders, to allow several external instruments to be placed on top 3 to help deposit the film.
  • PEALD Plasma Enhanced ALD
  • the covers 3 of the camera can be changed depending on the materials that need to be deposited during the process.
  • a conventional flat lid for the deposit of oxides a lid PEALD ("Plasma Enhanced ALD") for the deposit of nitrides or a lid electrical and mechanical feeders for assistance in nanostructured processes.
  • the volume of camera 1 can therefore be modified according to the size of the sample and the shape requirements, thereby changing the capacity of camera 1.
  • a separation plate 4 with an O-ring and screws can be placed on each step 8 to reduce said capacity as a convenience.
  • Chamber 1 can be heated from above, from below and laterally, and the maximum heating temperature can be 300 e C.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

An atomic layer deposition chamber (1) comprises a chamber body (2) and a chamber lid (3), and additionally comprises at least one separation plate (4) delimiting different interior volumes (5) in the body (2) of the chamber (1), each one of these interior volumes (5) having an inlet (6) and an outlet (7). The invention also relates to an atomic layer deposition equipment comprising said atomic layer deposition chamber (1).

Description

DESCRIPCIÓN  DESCRIPTION
Cámara para depósito de capas atómicas Campo de la invención Chamber for deposition of atomic layers Field of the invention
La presente invención se refiere a una cámara para depósito de capas atómicas ("Atomic Layer Deposition"- ALD, en inglés), de especial aplicación en nanotecnología. Asimismo se refiere a un equipo para depósito de capas atómicas, que comprende una cámara para depósito de capas atómicas de la invención. The present invention relates to a chamber for deposition of atomic layers ("Atomic Layer Deposition" - ALD, in English), of special application in nanotechnology. It also refers to a device for depositing atomic layers, comprising a chamber for depositing atomic layers of the invention.
Antecedentes de la invención BACKGROUND OF THE INVENTION
El depósito de capas atómicas (ALD) es una técnica utilizada para depositar capas de material en recubrimientos en los que el aspecto sea una característica importante. Un ejemplo de un proceso ALD incluye la introducción secuencial de pulsos de gases. Por ejemplo, un ciclo para la introducción secuencial de pulsos de gases puede contener un pulso de un primer gas reactivo, seguido por un pulso de un gas de purga y/o una evacuación de la bomba, seguido por un pulso de un segundo gas reactivo, y seguido por un impulso de un gas de purga y/o una evacuación de la bomba. La introducción secuencial de los pulsos individuales del primer reactivo y el segundo reactivo puede dar como resultado la absorción alterna auto-limitante de monocapas de los reactivos en la superficie del sustrato y, por lo tanto, forma una monocapa de material para cada ciclo. El ciclo se puede repetir hasta un espesor deseado del material depositado. Un pulso de un gas de purga y/o una evacuación de la bomba entre los pulsos del primer gas reactivo y los pulsos del segundo gas reactivo sirve para reducir la probabilidad de reacciones en fase gaseosa de los reactivos debido a las cantidades en exceso de los reactivos que permanecen en la cámara. The deposition of atomic layers (ALD) is a technique used to deposit layers of material in coatings in which appearance is an important feature. An example of an ALD process includes the sequential introduction of gas pulses. For example, a cycle for the sequential introduction of gas pulses may contain a pulse of a first reactive gas, followed by a pulse of a purge gas and / or a pump evacuation, followed by a pulse of a second reactive gas , and followed by an impulse of a purge gas and / or an evacuation of the pump. The sequential introduction of the individual pulses of the first reagent and the second reagent can result in self-limiting alternating absorption of monolayers of the reactants on the surface of the substrate and, therefore, form a monolayer of material for each cycle. The cycle can be repeated to a desired thickness of the deposited material. A pulse of a purge gas and / or an evacuation of the pump between the pulses of the first reactive gas and the pulses of the second reactant gas serves to reduce the likelihood of gas phase reactions of the reactants due to excess amounts of the reactants. reagents that remain in the chamber.
Sin embargo, se ha observado que el diseño de cámaras para procesos ALD, en general orientados a sustratos 2D, por ejemplo, obleas de silicio de las empleadas en microelectrónica, no permite el depósito sobre sustratos de formas complejas que puedan tener grandes tamaños o formas no geométricas (por ejemplo, implantes, fibras y piezas metalúrgicas). Las máquinas existentes en el mercado emplean cámaras intercambiables de diferentes volúmenes, por lo que su empleo resulta molesto y es necesario realizar numerosos procesos de conexión y desconexión de componentes. However, it has been observed that the design of cameras for ALD processes, generally oriented to 2D substrates, for example, silicon wafers of those used in microelectronics, does not allow the deposit on substrates of complex shapes that may have large sizes or shapes non-geometric (for example, implants, fibers and metallurgical parts). The existing machines in the market use interchangeable cameras of different volumes, so its use is annoying and it is necessary to perform numerous processes of connection and disconnection of components.
Sumario de la invención Summary of the invention
El objeto de la presente invención es, por tanto, proporcionar una cámara para depósito de capas atómicas que resuelva los inconvenientes mencionados en las cámaras de la técnica anterior. The object of the present invention is, therefore, to provide a chamber for deposition of atomic layers that solves the drawbacks mentioned in the prior art cameras.
La invención proporciona una cámara para depósito de capas atómicas que comprende un cuerpo de la cámara y una tapa de la cámara, y, adicionalmente, al menos una placa de separación que delimita diferentes volúmenes interiores en el cuerpo de la cámara, presentando cada uno de estos volúmenes interiores una entrada y una salida. The invention provides a chamber for deposition of atomic layers comprising a chamber body and a chamber lid, and, in addition, at least one separation plate delimiting different interior volumes in the body of the chamber, each of which has these interior volumes an entrance and an exit.
La configuración de la cámara para depósito de capas atómicas de la invención permite al usuario cambiar fácilmente el volumen de la cámara en función de la forma o el tamaño de los sustratos que deben ser recubiertos. Por tanto, permite que el mismo usuario realice el proceso de ALD para un amplio rango de materiales de sustrato sin estar limitado a sustratos de un determinado tamaño. The configuration of the camera for depositing atomic layers of the invention allows the user to easily change the volume of the camera depending on the shape or size of the substrates that must be coated. Therefore, it allows the same user to perform the ALD process for a wide range of substrate materials without being limited to substrates of a certain size.
La cámara, por tanto, tiene un volumen principal fijo, que puede reducirse a conveniencia con las placas de separación, y se pueden emplear las entradas y salidas adecuadas según los volúmenes empleados. The chamber, therefore, has a fixed main volume, which can be reduced conveniently with the separation plates, and the appropriate inputs and outputs can be used according to the volumes used.
Otras realizaciones ventajosas de la invención se exponen en las reivindicaciones dependientes. Other advantageous embodiments of the invention are set forth in the dependent claims.
Breve descripción de las figuras Brief description of the figures
A continuación se describirá una realización ilustrativa, y en ningún sentido limitativa, del objeto de la presente invención, haciendo referencia a los dibujos que se acompañan, en los cuales: La figura 1 muestra una vista en sección transversal de la cámara para depósito de capas atómicas de la invención. An illustrative embodiment will now be described, and in no limiting sense, of the object of the present invention, with reference to the accompanying drawings, in which: Figure 1 shows a cross-sectional view of the chamber for deposition of atomic layers of the invention.
La figura 2 muestra una vista frontal de la cámara para depósito de capas atómicas de la invención. La figura 3 muestra otra vista en sección transversal de la cámara para depósito de capas atómicas de la invención. Figure 2 shows a front view of the chamber for deposition of atomic layers of the invention. Figure 3 shows another cross-sectional view of the chamber for deposition of atomic layers of the invention.
La figura 4 muestra una vista lateral de la cámara para depósito de capas atómicas de la invención. Figure 4 shows a side view of the chamber for deposition of atomic layers of the invention.
La figura 5 muestra una vista en perspectiva del cuerpo de la cámara para depósito de capas atómicas de la invención. Figure 5 shows a perspective view of the body of the chamber for deposition of atomic layers of the invention.
Descripción detallada de la invención Detailed description of the invention
Las figuras 1 a 4 representan varias vistas de la cámara 1 para depósito de capas atómicas de la invención. Figures 1 to 4 depict several views of the chamber 1 for deposition of atomic layers of the invention.
En la realización mostrada en dichas figuras se muestra una cámara 1 para depósito de capas atómicas con un cuerpo 2 de la cámara, una tapa 3 de la cámara y tres volúmenes interiores 5, estando estos volúmenes interiores 5 separados por dos placas de separación 4 intermedias. Cada uno de los volúmenes 5 tiene una entrada 6 y una salida 7 (ubicadas lateralmente en las figuras 2 y 3), donde irán conectados los correspondientes tubos. In the embodiment shown in said figures there is shown a chamber 1 for depositing atomic layers with a body 2 of the chamber, a cover 3 of the chamber and three interior volumes 5, these inner volumes 5 being separated by two intermediate separation plates 4 . Each of the volumes 5 has an inlet 6 and an outlet 7 (located laterally in Figures 2 and 3), where the corresponding tubes will be connected.
La realización de dichas figuras presenta volúmenes interiores 5 de forma cilindrica y escalonados, de diámetro decreciente hacia abajo. El cuerpo 2 de la cámara (representado también en la figura 5) presenta dos escalones 8, estando ubicado cada uno de estos escalones 8 en la separación entre dos volúmenes interiores 5 consecutivos. The embodiment of said figures presents internal volumes 5 of cylindrical shape and staggered, of decreasing diameter downwards. The body 2 of the chamber (also shown in Figure 5) has two steps 8, each of these steps 8 being located in the separation between two consecutive interior volumes 5.
En la figura 4 se observa que en la parte superior de la cámara 1 hay un soporte 9 al que se puede acoplar la tapa 3 de la cámara de manera desmontable. El soporte 9 de la tapa 3 permite la intercambiabilidad modular y sencilla de las diferentes tapas 3 que pueden acoplarse a la cámara 1 : tapa convencional para realizar procesos térmicos de depósito de capas atómicas; tapa de reactor de plasma, para PEALD ("Plasma Enhanced ALD"); tapa con alimentadores eléctricos y mecánicos, para permitir que varios instrumentos externos sean colocados sobre la tapa 3 para ayudar al depósito de la película. Figure 4 shows that in the upper part of the chamber 1 there is a support 9 to which the lid 3 of the chamber can be detachably coupled. The support 9 of the lid 3 allows the modular and simple interchangeability of the different lids 3 that can be attached to the chamber 1: conventional lid to perform thermal deposition processes of atomic layers; plasma reactor lid, for PEALD ("Plasma Enhanced ALD"); lid with electrical and mechanical feeders, to allow several external instruments to be placed on top 3 to help deposit the film.
Las tapas 3 de la cámara se pueden cambiar en función de los materiales que se necesite depositar durante el proceso. Por ejemplo, una tapa convencional plana para el depósito de óxidos, una tapa PEALD ("Plasma Enhanced ALD") para el depósito de nitruros o una tapa alimentadores eléctricos y mecánicos para asistencia en procesos nanoestructurados. El volumen de la cámara 1 puede, por tanto, modificarse en función del tamaño de la muestra y de los requisitos de forma, cambiando así la capacidad de la cámara 1 . Sobre cada escalón 8 puede situarse una placa de separación 4 con junta tórica y tornillos, para reducir dicha capacidad a conveniencia. The covers 3 of the camera can be changed depending on the materials that need to be deposited during the process. For example, a conventional flat lid for the deposit of oxides, a lid PEALD ("Plasma Enhanced ALD") for the deposit of nitrides or a lid electrical and mechanical feeders for assistance in nanostructured processes. The volume of camera 1 can therefore be modified according to the size of the sample and the shape requirements, thereby changing the capacity of camera 1. A separation plate 4 with an O-ring and screws can be placed on each step 8 to reduce said capacity as a convenience.
La cámara 1 puede ser calentada desde arriba, desde abajo y lateralmente, y la temperatura máxima de calentamiento puede ser de 300eC. Chamber 1 can be heated from above, from below and laterally, and the maximum heating temperature can be 300 e C.
Aunque se han descrito y representado unas realizaciones del invento, es evidente que pueden introducirse en ellas modificaciones comprendidas dentro del alcance del mismo, no debiendo considerarse limitado éste a dichas realizaciones, sino únicamente al contenido de las reivindicaciones siguientes. Although embodiments of the invention have been described and illustrated, it is clear that modifications within the scope thereof may be introduced therein, and should not be considered limited to said embodiments, but only to the content of the following claims.

Claims

REIVINDICACIONES
1 . - Cámara (1 ) para depósito de capas atómicas, que comprende un cuerpo (2) de la cámara y una tapa (3) de la cámara, caracterizada por que comprende adicionalmente al menos una placa de separación (4) que delimita diferentes volúmenes interiores (5) en el cuerpo (2) de la cámara, presentando cada uno de estos volúmenes interiores (5) una entrada (6) y una salida (7). one . - Chamber (1) for deposition of atomic layers, comprising a body (2) of the chamber and a lid (3) of the chamber, characterized in that it additionally comprises at least one separation plate (4) that delimits different interior volumes (5) in the body (2) of the chamber, each of these interior volumes (5) presenting an entrance (6) and an exit (7).
2. - Cámara (1 ) para depósito de capas atómicas según la reivindicación 1 , en la que el cuerpo (2) de la cámara comprende al menos un escalón (8), estando ubicado cada uno de estos escalones (8) en la separación entre dos volúmenes interiores (5) consecutivos. 2. - Chamber (1) for deposition of atomic layers according to claim 1, wherein the body (2) of the chamber comprises at least one step (8), each of these steps (8) being located in the separation between two consecutive inner volumes (5).
3.- Cámara (1 ) para depósito de capas atómicas según la reivindicación 2, en la que los volúmenes interiores (5) son cilindricos y de diámetro decreciente hacia abajo. 3. Chamber (1) for deposition of atomic layers according to claim 2, wherein the inner volumes (5) are cylindrical and of decreasing diameter downwards.
4.- Cámara (1 ) para depósito de capas atómicas según cualquiera de las reivindicaciones anteriores, que comprende adicionalmente un soporte (9) al que se puede acoplar la tapa (3) de la cámara de manera desmontable. 4. Chamber (1) for deposition of atomic layers according to any of the preceding claims, further comprising a support (9) to which the lid (3) of the camera can be detachably coupled.
5.- Cámara (1 ) para depósito de capas atómicas según la reivindicación 4, en la que la tapa (3) de la cámara es una tapa convencional para procesos térmicos de depósito de capas atómicas. 5. Chamber (1) for deposition of atomic layers according to claim 4, wherein the cover (3) of the chamber is a conventional lid for thermal deposition processes of atomic layers.
6.- Cámara (1 ) para depósito de capas atómicas según la reivindicación 4, en la que la tapa (3) de la cámara es una tapa de reactor de plasma. 6. Chamber (1) for deposition of atomic layers according to claim 4, wherein the lid (3) of the chamber is a plasma reactor lid.
7.- Cámara (1 ) para depósito de capas atómicas según la reivindicación 4, en la que la tapa (3) de la cámara es una tapa con alimentadores eléctricos y mecánicos. 7. Chamber (1) for deposition of atomic layers according to claim 4, wherein the cover (3) of the chamber is a cover with electrical and mechanical feeders.
8.- Equipo para depósito de capas atómicas, que comprende una cámara (1 ) para depósito de capas atómicas de una de las reivindicaciones 1 a 7. 8. Equipment for deposition of atomic layers, comprising a chamber (1) for deposition of atomic layers of one of claims 1 to 7.
PCT/ES2016/070663 2016-09-22 2016-09-22 Atomic layer deposition chamber WO2018055215A1 (en)

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PCT/ES2016/070663 WO2018055215A1 (en) 2016-09-22 2016-09-22 Atomic layer deposition chamber
ES201990026A ES2712868B1 (en) 2016-09-22 2016-09-22 Chamber for depositing atomic layers
CN201680089470.7A CN109790619A (en) 2016-09-22 2016-09-22 Atomic layer deposition chamber

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CN109790619A (en) 2019-05-21
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ES2712868B1 (en) 2020-03-10

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