WO2018040781A1 - Quantum dot light-emitting device and backlight module - Google Patents

Quantum dot light-emitting device and backlight module Download PDF

Info

Publication number
WO2018040781A1
WO2018040781A1 PCT/CN2017/093755 CN2017093755W WO2018040781A1 WO 2018040781 A1 WO2018040781 A1 WO 2018040781A1 CN 2017093755 W CN2017093755 W CN 2017093755W WO 2018040781 A1 WO2018040781 A1 WO 2018040781A1
Authority
WO
WIPO (PCT)
Prior art keywords
quantum dot
emitting device
light
dot light
bottom portion
Prior art date
Application number
PCT/CN2017/093755
Other languages
French (fr)
Chinese (zh)
Inventor
肖伟
李硕
于甄
Original Assignee
张家港康得新光电材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 张家港康得新光电材料有限公司 filed Critical 张家港康得新光电材料有限公司
Publication of WO2018040781A1 publication Critical patent/WO2018040781A1/en

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133605Direct backlight including specially adapted reflectors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133608Direct backlight including particular frames or supporting means
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133614Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light

Definitions

  • the invention belongs to the technical field of liquid crystal display, and particularly relates to a quantum dot light emitting device and a backlight module.
  • the liquid crystal display device includes an LCD liquid crystal panel for displaying image content and a backlight module for supplying a white light source to the LCD liquid crystal panel.
  • the white light source color gamut of the backlight module determines the color gamut of the image content presented by the liquid crystal display.
  • the blue LED chip is used to excite the quantum dots to emit green light and red light, and the green light, the red light and the unexcited blue light are mixed into a white light source.
  • Quantum Dot is a quasi-zero-dimensional nanocrystal composed of a small number of atoms. It is generally spherical or spheroidal in shape and is made of a semiconductor material (usually composed of IIB-VIB or IIIB-VB elements). Nanoparticles with a diameter of 2 to 20 nm are stabilized. These nanoparticles can illuminate higher wavelengths of light at specific wavelengths of light.
  • Quantum Dot Enhancement Film QDEF
  • QDEF Quantum Dot Enhancement Film
  • the luminescence properties of quantum dots are mainly determined by the quantum size effect and the dielectric confinement effect.
  • the electrons on the valence band absorb a certain amount of energy and the photons transition to the conduction band. Then jump back to the valence band and release excess energy in the form of radiated photons, which produces fluorescence.
  • the excitation efficiency drops rapidly or even fails when the temperature is higher than 120 °C. Therefore, in order to avoid the failure of the operating temperature of the LED light-emitting chip to cause the quantum dot material to fail, the quantum dot material must be placed away from the LED. The place where the chip is illuminated to maintain proper insulation gap. Therefore, the current mature practice in the industry: (1) In the direct-lit backlight module solution, the quantum dot material is encapsulated in an optical film to form a quantum dot film, and for the convenience of assembly, the quantum dot film is used as an optical film. One component of the set is placed between the diffuser plate and the LCD liquid crystal panel. 1 is a typical assembly structure of a prior art direct type backlight module.
  • an LED light emitting chip 10 disposed on a printed circuit is fixed on a back plate 11, and a quantum dot film 8 is disposed on a diffusion plate. 9 between the light-emitting surface and the other optical film 7.
  • a direct-type backlight module of the structure of FIG. 1 it is occasionally found that the excitation performance of the quantum dot material fails, causing an increase in the blue component directly transmitted through the quantum dot film 8, and correspondingly, the red and green light generated by the excitation is less, resulting in less
  • the backlight module has a subjective blue color as a whole, and the cost of the quantum dot film 8 is also high, and the edge is prone to failure in a long-term use environment.
  • the quantum dot material is encapsulated in a glass tube to form a quantum dot tube, and the quantum dot tube is disposed on the light emitting side of the LED light emitting chip through a fixed bracket and is kept constant with the LED light emitting chip. Insulation gap, the disadvantage of this method is that the installation is inconvenient due to the need to set the bracket.
  • the present invention aims to provide a quantum dot light emitting device and a backlight module.
  • the above deficiency refers to the failure of the prior art backlight module due to the heat generated by the quantum dot material due to the LED light emitting chip.
  • the first technical solution provided by the present invention is: a quantum dot light emitting device
  • the quantum dot light emitting device comprises a card slot, a quantum dot device, a lens and at least one LED light emitting chip;
  • the card slot comprises a hollow portion, a bottom portion and a side wall, and the bottom portion is provided with an opening, and the opening portion is disposed at the opening
  • the LED light-emitting chip, and the inner surface of the bottom portion is a concave-convex structure;
  • the quantum dot device is disposed in a hollow portion of the card slot; and the lens is adhesively fixed to a top portion of the sidewall of the card slot.
  • the quantum dot device comprises a substrate, a quantum dot coating, and a water oxygen barrier layer.
  • the concave-convex structure is at least one of a hemisphere, a cylinder, a cone, a pyramid, a prism, and a frustum.
  • a preferred technical solution is that the quantum dot device and the inner surface of the bottom are fixed at both ends by glue or snap.
  • the sidewall further includes a stud structure, and the quantum dot light emitting device is fixed to the stud structure by glue or snap.
  • the height of the boss structure is 0.2-1 mm.
  • a preferred technical solution is that the reflectance of the bottom inner surface and the inner surface of the side wall is greater than or equal to 90%.
  • the second technical solution provided by the present invention is: a backlight module comprising a back plate and a diffusion plate which are sequentially stacked, and the back plate is provided with a plurality of the above-mentioned surfaces facing the diffusion plate.
  • a quantum dot light emitting device according to the technical solution.
  • a quantum dot light emitting device including a card slot, a quantum dot device, and n1 LED light emitting chips
  • the card slot includes a hollow portion, a bottom portion, and a side wall
  • the bottom and the side walls are connected and surround to form a hollow portion
  • the bottom portion is provided with n2 openings, each of the openings accommodating n3 LED light-emitting chips, and the surface of the bottom portion facing the hollow portion is an inner surface having a concave-convex structure, wherein n1 , n2 and n3 are integers, and n1 ⁇ n2 ⁇ 1, n1 ⁇ n3 ⁇ 1; the quantum dot device is disposed in the hollow portion.
  • the above quantum dot device comprises a substrate, a quantum dot coating and a water and oxygen barrier layer which are sequentially stacked, and the substrate is disposed near the bottom.
  • the convex portion in the concave-convex structure is at least one of a hemispherical shape, a cylindrical shape, a tapered shape, a pyramid shape, a prismatic plate, and a frustum.
  • the above quantum dot device is fixed to the inner surface close to the side wall by glue or snap.
  • the sidewall further includes a boss structure protruding toward the hollow portion, and the quantum dot device is fixed on the boss structure by glue or snap, preferably the quantum dot device is fixed to the bottom of the boss structure by glue or snap on the surface.
  • the distance from the bottom surface of the above-mentioned boss structure to the inner surface is 0.2-1 mm; preferably, the boss structure is connected to the bottom, and the height of the boss structure is 0.2-1 mm.
  • the surface of the side wall facing the hollow portion is an inner surface of the side wall, and the inner surface of the bottom portion and the inner surface of the side wall have a reflectance greater than or equal to 90%.
  • the cross-sectional area of the hollow portion parallel to the bottom portion increases in a direction away from the bottom portion.
  • the above quantum dot light emitting device further includes a lens fixed on a surface of the sidewall away from the bottom.
  • a backlight module comprising a back sheet and a diffusion sheet which are sequentially stacked, and the back sheet is provided with one or more of the above-described quantum dot light-emitting devices toward the surface of the diffusion sheet.
  • the LED light emitting chip is disposed at the opening of the bottom portion, so that the distance between the two is far, and at the same time, the bottom of the card slot has a bump toward the surface of the hollow portion.
  • the structure increases the reflow of heat emitted by the LED light-emitting chip, reduces the influence of the heat generated by the LED light-emitting chip on the quantum dot device, thereby effectively alleviating the heat of the LED light-emitting chip and causing the quantum dot to fail, thereby ensuring the quantum dot
  • the device is stably excited and emits a predetermined amount of red light and green light, thereby improving the light emitting effect of the quantum dot light emitting device.
  • the convex portion of the concave-convex structure can diffuse the incident light generated by the LED light-emitting chip, so that more light is reflected into the quantum dot device, and the quantum dot light emission amount is improved.
  • FIG. 1 is a schematic diagram of a prior art direct type backlight module
  • FIG. 2 is a schematic structural view of a quantum dot lens package device
  • 3 is a schematic structural view of a quantum dot device
  • Figure 4 is a schematic view of the card slot structure
  • Figure 5 is a schematic view of the card slot structure 2
  • Figure 6 is a schematic diagram 3 of the card slot structure
  • FIG. 7 is a schematic structural view of a backlight module
  • Figure 8 is a diagram showing the light intensity distribution of the LED of the present invention.
  • FIG. 9 is a view showing a spectral distribution diagram of a quantum dot light-emitting device of Embodiment 1 of the present invention.
  • Figure 10 is a view showing a spectral distribution diagram of a quantum dot light-emitting device of Embodiment 2 of the present invention.
  • Figure 11 is a view showing the spectral distribution of a quantum dot light-emitting device of Embodiment 3 of the present invention.
  • Figure 12 is a view showing the spectral distribution of a quantum dot light-emitting device of Embodiment 4 of the present invention.
  • Figure 13 is a view showing the spectral distribution of a quantum dot light-emitting device of Embodiment 5 of the present invention.
  • Figure 14 is a view showing the spectral distribution of a quantum dot light-emitting device of Embodiment 6 of the present invention.
  • Figure 15 is a view showing the spectral distribution of the quantum dot light-emitting device of Comparative Example 1 of the present invention.
  • Figure 16 is a view showing the spectral distribution of the quantum dot light-emitting device of Comparative Example 2 of the present invention.
  • Fig. 17 is a view showing the spectral distribution of the quantum dot light-emitting device of Comparative Example 3 of the present invention.
  • a quantum dot light emitting device includes a card slot 1, a quantum dot device 3, a lens 4, and an LED light emitting chip 10.
  • the card slot includes a hollow portion 16, a bottom portion 14 and a side wall 15; the bottom inner surface 6a is a concave-convex structure 13 and an opening is provided at the bottom, and the LED light-emitting chip 10 is received at the opening; the quantum The dot device 3 is disposed in the hollow portion of the card slot 1; the lens 4 is adhesively fixed to the top of the sidewall of the card slot.
  • the quantum dot device is composed of a substrate and a quantum dot coating coated on the substrate.
  • the quantum dot device is formed by sequentially laminating the substrate 3a, the quantum dot coating 3b, and the water-oxygen barrier layer 3c.
  • the quantum dot device can be a quantum dot optical film.
  • the convex structure of the concave-convex structure is at least one of a hemispherical shape, a cylindrical shape, a conical shape, a pyramid shape, a prismatic structure, and a frustum stage, or a random height protrusion, and the convex structure of the concave and convex structure may be
  • the incident light generated by the LED light-emitting chip is diffused, and can provide better heat reflow, and reduce the influence of the heat generated by the LED light-emitting chip on the quantum dot device.
  • the concave structure of the concave-convex structure is at least one of a hemisphere, a cylinder, a cone, a pyramid, a prism and a frustum, or a random depth depression, which can also provide better heat reflow and reduce the LED light-emitting chip.
  • the shape of the protrusion is hemispherical.
  • the projections on the inner surface of the bottom have both a triangular pyramid shape in the cone and a frustum.
  • the quantum dot light-emitting device is fixed in such a manner that the sidewall further includes a boss structure 2, and the height of the boss structure is 0.2-1 mm.
  • the quantum dot light emitting device is fixed to the boss structure 2 by glue. In other embodiments, the quantum dot light emitting device is affixed to the boss structure by snaps.
  • the bump structure may not be provided, but the quantum dot light-emitting device and the inner surface of the bottom portion are fixed by glue or snap at both ends.
  • the inner surface is a vertical surface, a sloped surface and a curved surface.
  • the second technical solution provided by the present invention is: a backlight module comprising a back plate and a diffusion plate which are sequentially stacked, and the back plate is provided with a plurality of the above-mentioned surfaces facing the diffusion plate.
  • a quantum dot light emitting device according to the technical solution.
  • the LED light emitting chip is a blue LED light emitting chip, and the main wavelength ranges from 400 to 480 nm.
  • the LED light-emitting chip can inject light through the opening at the bottom of the card slot to excite the quantum dot device.
  • a preferred embodiment is that the reflectance of the side wall inner surface 6b and the bottom inner surface 6a is greater than or equal to 90%.
  • the card slot can be made of a material having a higher reflectance, or a highly diffuse reflection coating can be applied to the inner surface of the card slot, that is, the inner wall surface 6b and the bottom inner surface 6a of the card slot when the card groove is made of other materials.
  • a backlight module includes a back plate and a diffusion plate which are sequentially stacked, and the back plate is provided with a plurality of quantum dot lens package devices 12 toward the surface of the diffusion plate.
  • Other optical films 7 may be provided on the diffuser plate.
  • a plurality of quantum dot lens package devices are disposed on the back plate to replace the entire quantum dot film, thereby reducing the manufacturing cost of the backlight module.
  • the light intensity distribution of each angle of the blue LED is shown in Fig. 8.
  • the angle is the angle between the normal of the plane of the quantum dot film and the light emitted by the blue LED.
  • the X axis represents the radiation angle
  • the Y axis represents the relative light intensity.
  • the light intensity of the LED light pattern distributed at a large angle of 60°-80° from the normal direction of 0° can still be equivalent to the light intensity in the normal direction, that is, the unevenness of the lamp shadow can be eliminated.
  • the light pattern distribution can achieve the ideal A (angle) / P (pitch) ratio, reasonable Distributing the distribution of direct-lit LEDs, reducing the number of LEDs used, eliminating the difference between the LEDs and the optical image of the backlight module.
  • the quantum dot light emitting device includes a card slot 1, a quantum dot device 3, and n1 LED light emitting chips 10; 1 includes a hollow portion 16, a bottom portion 14 and a side wall 15, the bottom portion 14 and the side wall 15 are connected and surround the hollow portion 16, and the bottom portion 14 is provided with n2 openings, each of which accommodates n3 LED light-emitting chips 10, and
  • the surface of the bottom portion 14 facing the hollow portion 16 is an inner surface having the uneven structure 13 in which n1, n2 and n3 are integers, and n1 ⁇ n2 ⁇ 1, n1 ⁇ n3 ⁇ 1; the quantum dot device 3 is disposed in the hollow portion 16 .
  • the quantum dot device is disposed in the hollow portion, and the LED light emitting chip is disposed at the opening of the bottom portion so that the distance between the two is far.
  • the bottom portion 14 of the card slot 1 has the concave-convex structure 13 toward the surface of the hollow portion 16.
  • the convex portion of the concave-convex structure can diffuse the incident light generated by the LED light-emitting chip, so that more light is reflected into the quantum dot device, and the quantum dot light emission amount is improved.
  • the above quantum dot device includes a substrate 3a, a quantum dot coating 3b, and a water and oxygen barrier layer 3c which are sequentially stacked, and the substrate 3a is disposed near the bottom portion 14.
  • the quantum dots are disposed on the substrate 3a in a coating manner, further away from the LED light-emitting chip, and the quantum dot coating 3b is further provided with a water-oxygen barrier layer 3c to protect the quantum dots, thereby avoiding quantum dot failure caused by water and oxygen erosion. .
  • the convex portion in the above-mentioned uneven structure 13 is at least one of a hemispherical shape, a cylindrical shape, a conical shape, a pyramid shape, a prismatic plate and a frustum. .
  • the structure of the above convex portion is relatively regular and is easy to manufacture.
  • the height of the convex portion is 0.1 to 1 mm.
  • the above quantum dot device 3 and the inner surface close to the side wall 15 are fixed by glue or snap.
  • the sidewall 15 further includes a stud structure 2 protruding toward the hollow portion, and the quantum dot device 3 is glued or buckled. It is fixed to the boss structure 2. It is further preferred that the quantum dot device 3 is fixed to the surface of the boss structure 2 away from the bottom by glue or snap.
  • the distance from the surface of the above-mentioned boss structure 2 away from the bottom portion 14 to the inner surface is 0.2-1 mm to minimize the influence of the heat of the LED light-emitting chip on the quantum dot device.
  • the above-mentioned boss structure 2 is connected to the bottom portion 14, and the height of the boss structure 2 is 0.2-1 mm.
  • the surface of the side wall 15 facing the hollow portion is named the inner surface of the side wall 15, preferably the inner surface of the bottom portion 14 and the side wall 15.
  • the reflectance of the inner surface is greater than or equal to 90%.
  • the card slot 1 can be made of a material having a high reflectance, or a high diffuse reflection coating can be applied to the inner surface of the card slot 1 and the inner surface of the side wall 15 and the inner surface of the bottom portion 14 when the card slot 1 is made of other materials. .
  • the cross-sectional area of the hollow portion 16 parallel to the bottom portion 14 increases in a direction away from the bottom portion 14.
  • the above quantum dot light emitting device further includes a lens 3 fixed to a surface of the side wall 15 away from the bottom portion 14.
  • a backlight module is provided. As shown in FIG. 7, the backlight module includes a back plate 11 and a diffusion plate 9 which are sequentially stacked, and the back plate 11 is provided with a surface facing the diffusion plate 9. Or a plurality of quantum dot light-emitting devices 12 of any of the above.
  • the LED light emitting chip is a blue LED light emitting chip, preferably having a dominant wavelength range of 400 to 480 nm, and the LED light emitting chip can inject light through the opening of the bottom of the card slot to excite the quantum dot device.
  • the red light quantum dots and green light quantum dots used in the following examples and comparative examples were from Hangzhou Najing Technology Co., Ltd., and the LED light emitting chips were from Jingyuan Optoelectronics Co., Ltd.
  • the structure of the quantum dot light-emitting device is as shown in FIG. 2, wherein there are 7 LED light-emitting chips, and an opening is arranged at the bottom center, and the convex portion in the concave-convex structure is hemispherical, the height of the hemisphere is 0.5 mm, and the boss structure Connected to the bottom, the height of the boss structure is 1 mm, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
  • PPA polyphthalamide
  • the structure of the quantum dot light-emitting device is as shown in FIG. 2, wherein there are 7 LED light-emitting chips, and an opening is arranged at the bottom center, and the convex portion in the concave-convex structure is hemispherical, the height of the hemisphere is 0.1 mm, and the boss The structure is attached to the bottom, the height of the boss structure is 0.2 mm, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
  • PPA polyphthalamide
  • the structure of the quantum dot light-emitting device is as shown in FIG. 2, wherein there are 7 LED light-emitting chips, and an opening is arranged at the center of the bottom, and the convex portion in the concave-convex structure is cylindrical, and the height of the cylindrical body is 0.5 mm, and the boss structure Connected to the bottom, the height of the boss structure is 1 mm, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
  • PPA polyphthalamide
  • the structure of the quantum dot light-emitting device is as shown in Fig. 2. Among them, there are 7 LED light-emitting chips, and an opening is arranged at the bottom center. Six openings are arranged on the same circumference around the center, and only one LED is illuminated in each opening.
  • the radius of the circumference of the chip is half of the radius of the bottom
  • the convex portion of the concave-convex structure is cylindrical
  • the height of the cylindrical body is 0.5 mm
  • the boss structure is connected to the bottom
  • the height of the boss structure is 1 mm
  • the inner surface of the side wall is a white PPA (polyphthalamide) surface.
  • the structure of the quantum dot light-emitting device is shown in Fig. 2. Among them, there are 7 LED light-emitting chips, and an opening is arranged at the bottom center.
  • the convex portion in the concave-convex structure is hemispherical, the height of the hemisphere is 0.2 mm, and the boss structure Connected to the bottom, the height of the boss structure is 1 mm, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
  • the structure of the quantum dot light-emitting device is as shown in Fig. 2. Among them, there are 7 LED light-emitting chips, and an opening is arranged at the bottom center.
  • the convex portion in the concave-convex structure is hemispherical, and the height of the hemisphere is 1 mm.
  • the quantum dot device is disposed on the top of the hemisphere, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
  • Embodiment 1 The difference from Embodiment 1 is that the LED light-emitting chip is disposed on the inner surface of the bottom without an opening at the bottom.
  • Embodiment 1 The difference from Embodiment 1 is that no quantum dot device is provided.
  • the structure of the quantum dot light-emitting device is as shown in Fig. 2. Among them, there are 7 LED light-emitting chips, one opening is arranged at the bottom center, the inner surface of the bottom is flat, the inner surface of the bottom of the quantum dot device, the inner surface of the bottom and The inner surface of the side wall is a white PPA (polyphthalamide) surface.
  • the blue light band 450 nm peak of Example 1 is comparable to that of Comparative Example 1, but the green light 540 nm and the red light 630 nm peak are higher than the comparative example 1.
  • the opening, the concave-convex structure and the stud structure of the embodiment 1 enhance the excitation of red light and green light, indicating that the LED light-emitting chip is disposed in the opening of the bottom, which effectively alleviates the LED light-emitting chip.
  • the quantum dot failure caused by heat It can be seen from the comparison of FIG. 9 to FIG.
  • the height of the boss also affects the red light and green light excitation effects of the quantum dot light-emitting device, and the effect of the boss height of 1 mm is higher than that of the embodiment 2 boss.
  • the height of 0.2mm is about 5% higher for the excitation of red and green light, which means that the increase in the height of the bump further alleviates the heat of the LED light-emitting chip and causes the quantum dot to fail. It can be seen from the comparison of FIG. 9 and FIG.
  • the height of the convex portion of the uneven structure also affects the red light and green light excitation effects of the quantum dot light-emitting device
  • the hemispherical height of Embodiment 1 is 0.5 mm
  • the hemispherical height of 5 is 0.2 mm
  • the pair of Embodiment 1 The addition effect of red light and green light is about 3% higher, indicating that the increase in hemispherical height is beneficial to further alleviate the heat of the LED light-emitting chip and cause quantum dot failure.
  • the selected structural shape of the land has no effect on the illumination of the quantum dot device.

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)

Abstract

Provided are a quantum dot light-emitting device (12) and a backlight module. The backlight module comprises a backplane (11) and a diffusion plate (9) which are sequentially stacked. One surface of the backplane (11) facing the diffusion plate (9) is provided with multiple quantum dot light-emitting devices (12). The quantum dot light-emitting device (12) comprises an engagement slot (1), a quantum dot device (3), a lens (4) and at least one LED light-emitting chip (10). The engagement slot (1) has a hollow portion (16), a bottom portion (14) and a side wall (15). An opening is arranged at the bottom portion (14). The LED light-emitting chip (10) is received in the opening. An inner surface (6a) of the bottom portion (14) has alternating recesses and protrusions (13). A quantum dot device (3) is provided in the hollow portion of the engagement slot (1). The lens (4) is adhered and fixed to a top portion of the side wall (15). The inner surface (6a) of the bottom portion (14) having the concavo-convex structure (13) enables incident light generated by the LED light-emitting chip (10) to be diffused, and exhibits better thermal reflow performance, thereby reducing impact of heat generated during operation of the LED light-emitting chip (10) in the quantum dot device (3).

Description

一种量子点发光器件及背光模组Quantum dot light emitting device and backlight module 技术领域Technical field
本发明属于液晶显示技术领域,具体涉及一种量子点发光器件及背光模组。The invention belongs to the technical field of liquid crystal display, and particularly relates to a quantum dot light emitting device and a backlight module.
背景技术Background technique
液晶显示设备包括用于显示图像内容的LCD液晶面板和向LCD液晶面板提供白色光源的背光模组。背光模组的白色光源色域范围决定了液晶显示器呈现图像内容的色域范围。为了提高白色光源的色域范围,采用蓝光LED芯片激发量子点发出绿光和红光,该绿光、红光及未激发蓝光混合成白色光源。The liquid crystal display device includes an LCD liquid crystal panel for displaying image content and a backlight module for supplying a white light source to the LCD liquid crystal panel. The white light source color gamut of the backlight module determines the color gamut of the image content presented by the liquid crystal display. In order to increase the color gamut range of the white light source, the blue LED chip is used to excite the quantum dots to emit green light and red light, and the green light, the red light and the unexcited blue light are mixed into a white light source.
量子点(Quantum Dot)是准零维的纳米晶体,由少量的原子构成,形态上一般为球形或类球形,是由半导体材料(通常由IIB~VIB或IIIB~VB元素组成)制成的、稳定直径在2~20nm的纳米粒子。这些纳米粒子能在特定波长光线照射下激发出更高波长的光,量子点膜(Quantum Dot Enhancement Film,QDEF)由于嵌入了发绿光和红光的量子点,可在蓝光LED背光的照射下激发绿光和红光,激发的绿光和红光与透过薄膜的蓝光一起混合成白光,从而提升了LCD背光的发光效果。Quantum Dot is a quasi-zero-dimensional nanocrystal composed of a small number of atoms. It is generally spherical or spheroidal in shape and is made of a semiconductor material (usually composed of IIB-VIB or IIIB-VB elements). Nanoparticles with a diameter of 2 to 20 nm are stabilized. These nanoparticles can illuminate higher wavelengths of light at specific wavelengths of light. Quantum Dot Enhancement Film (QDEF) can be illuminated by blue LED backlights due to the embedding of quantum dots that emit green and red light. The green and red light is excited, and the excited green and red light are mixed with the blue light transmitted through the film to form white light, thereby improving the illumination effect of the LCD backlight.
量子点的发光特性主要由量子尺寸效应和介电限域效应所决定,当一束光照射到量子点上,其价带上的电子吸收一定能量的光子跃迁到导带,导带上的电子再跃迁回到价带,以辐射出光子的形式释放出多余的能量,即产生了荧光。The luminescence properties of quantum dots are mainly determined by the quantum size effect and the dielectric confinement effect. When a beam of light is irradiated onto a quantum dot, the electrons on the valence band absorb a certain amount of energy and the photons transition to the conduction band. Then jump back to the valence band and release excess energy in the form of radiated photons, which produces fluorescence.
由于量子点的热稳定性较差,温度高于120℃时激发效率急速下降甚至失效,因此,为了避免LED发光芯片工作温度升高致使量子点材料失效,必须将该量子点材料放置在远离LED发光芯片的地方,以保持适当隔热间隙。因此,目前行业内比较成熟的做法:(1)在直下式背光模组方案中,将量子点材料封装在光学膜片中形成量子点膜,为了组装方便,将该量子点膜作为光学膜片组的一个组件放置在扩散板与LCD液晶面板之间。图1为现有技术直下式背光模组的一种典型组装结构,如图1所示,设置在印制电路上的LED发光芯片10固定在背板11上,量子点膜8设置在扩散板9的出光面和其他光学膜片7之间。采用图1结构的直下式背光模组,偶有发现量子点材料的激发性能失效,引起直接透过量子点膜8的蓝光成分增多,相应的,激发产生的红光和绿光变少,导致背光模组整体主观发蓝,量子点膜8的造价成本也很高,且在长期的使用环境中边缘容易失效。(2)在侧入式背光模组方案中,将量子点材料封装在玻璃管中形成量子点管,通过固定支架将该量子点管设置在LED发光芯片的出光侧且与LED发光芯片保持一定隔热间隙,该方式的缺点是因需要设置支架而造成安装不便。Due to the poor thermal stability of quantum dots, the excitation efficiency drops rapidly or even fails when the temperature is higher than 120 °C. Therefore, in order to avoid the failure of the operating temperature of the LED light-emitting chip to cause the quantum dot material to fail, the quantum dot material must be placed away from the LED. The place where the chip is illuminated to maintain proper insulation gap. Therefore, the current mature practice in the industry: (1) In the direct-lit backlight module solution, the quantum dot material is encapsulated in an optical film to form a quantum dot film, and for the convenience of assembly, the quantum dot film is used as an optical film. One component of the set is placed between the diffuser plate and the LCD liquid crystal panel. 1 is a typical assembly structure of a prior art direct type backlight module. As shown in FIG. 1, an LED light emitting chip 10 disposed on a printed circuit is fixed on a back plate 11, and a quantum dot film 8 is disposed on a diffusion plate. 9 between the light-emitting surface and the other optical film 7. Using the direct-type backlight module of the structure of FIG. 1, it is occasionally found that the excitation performance of the quantum dot material fails, causing an increase in the blue component directly transmitted through the quantum dot film 8, and correspondingly, the red and green light generated by the excitation is less, resulting in less The backlight module has a subjective blue color as a whole, and the cost of the quantum dot film 8 is also high, and the edge is prone to failure in a long-term use environment. (2) In the side-entry backlight module solution, the quantum dot material is encapsulated in a glass tube to form a quantum dot tube, and the quantum dot tube is disposed on the light emitting side of the LED light emitting chip through a fixed bracket and is kept constant with the LED light emitting chip. Insulation gap, the disadvantage of this method is that the installation is inconvenient due to the need to set the bracket.
发明内容Summary of the invention
为克服上述现有技术中的不足,本发明目的在于提供一种量子点发光器件及背光模组。 In order to overcome the above deficiencies in the prior art, the present invention aims to provide a quantum dot light emitting device and a backlight module.
上述不足是指现有技术的背光模组由于量子点材料由于LED发光芯片发出的热量导致材料失效。The above deficiency refers to the failure of the prior art backlight module due to the heat generated by the quantum dot material due to the LED light emitting chip.
为实现上述目的及其他相关目的,本发明提供的第一种技术方案是:一种量子点发光器件,To achieve the above and other related objects, the first technical solution provided by the present invention is: a quantum dot light emitting device,
所述的量子点发光器件包括卡槽、量子点器件、透镜和至少一个LED发光芯片;所述卡槽包括中空部分,底部和侧壁,所述底部设有开孔,开孔处容置所述的LED发光芯片,并且所述底部的内表面为凹凸结构;所述量子点器件设置于所述的卡槽的中空部分;所述的透镜与所述卡槽侧壁的顶部胶黏固定。The quantum dot light emitting device comprises a card slot, a quantum dot device, a lens and at least one LED light emitting chip; the card slot comprises a hollow portion, a bottom portion and a side wall, and the bottom portion is provided with an opening, and the opening portion is disposed at the opening The LED light-emitting chip, and the inner surface of the bottom portion is a concave-convex structure; the quantum dot device is disposed in a hollow portion of the card slot; and the lens is adhesively fixed to a top portion of the sidewall of the card slot.
优选的技术方案为:所述量子点器件包括基底、量子点涂层和水氧阻隔层。A preferred technical solution is that the quantum dot device comprises a substrate, a quantum dot coating, and a water oxygen barrier layer.
优选的技术方案为:所述的凹凸结构为半球形、圆柱形、锥形、金字塔形、棱台和锥台中的至少一种。A preferred technical solution is that the concave-convex structure is at least one of a hemisphere, a cylinder, a cone, a pyramid, a prism, and a frustum.
优选的技术方案为:所述的量子点器件与所述底部的内表面于两端通过胶水或者卡扣固定。A preferred technical solution is that the quantum dot device and the inner surface of the bottom are fixed at both ends by glue or snap.
优选的技术方案为:所述侧壁还包括一凸台结构,所述的量子点发光器件通过胶水或者卡扣固定于所述凸台结构上。In a preferred technical solution, the sidewall further includes a stud structure, and the quantum dot light emitting device is fixed to the stud structure by glue or snap.
优选的技术方案为:所述的凸台结构的高度为0.2-1毫米。A preferred technical solution is that the height of the boss structure is 0.2-1 mm.
优选的技术方案为:所述底部内表面和侧壁内表面的反射率大于或等于90%。A preferred technical solution is that the reflectance of the bottom inner surface and the inner surface of the side wall is greater than or equal to 90%.
为实现上述目的及其他相关目的,本发明提供的第二种技术方案是:一种背光模组,包括依次层叠的背板和扩散板,所述背板朝向扩散板的表面设有多个上述技术方案所述的量子点发光器件。In order to achieve the above and other related objects, the second technical solution provided by the present invention is: a backlight module comprising a back plate and a diffusion plate which are sequentially stacked, and the back plate is provided with a plurality of the above-mentioned surfaces facing the diffusion plate. A quantum dot light emitting device according to the technical solution.
为了实现上述目的,根据本发明的一个方面,提供了一种量子点发光器件,该量子点发光器件包括卡槽、量子点器件和n1个LED发光芯片;卡槽包括中空部分、底部和侧壁,底部和侧壁连接且环绕形成中空部分,底部设有n2个开孔,各开孔处容置n3个LED发光芯片,并且底部的朝向中空部分的表面为具有凹凸结构的内表面,其中n1、n2和n3均为整数,且n1≥n2≥1,n1≥n3≥1;量子点器件设置于中空部分。In order to achieve the above object, according to an aspect of the present invention, a quantum dot light emitting device including a card slot, a quantum dot device, and n1 LED light emitting chips is provided; the card slot includes a hollow portion, a bottom portion, and a side wall The bottom and the side walls are connected and surround to form a hollow portion, and the bottom portion is provided with n2 openings, each of the openings accommodating n3 LED light-emitting chips, and the surface of the bottom portion facing the hollow portion is an inner surface having a concave-convex structure, wherein n1 , n2 and n3 are integers, and n1≥n2≥1, n1≥n3≥1; the quantum dot device is disposed in the hollow portion.
进一步地,上述量子点器件包括依次叠置的基底、量子点涂层和水氧阻隔层,基底靠近底部设置。Further, the above quantum dot device comprises a substrate, a quantum dot coating and a water and oxygen barrier layer which are sequentially stacked, and the substrate is disposed near the bottom.
进一步地,上述凹凸结构中的凸部为半球形、圆柱形、锥形、金字塔形、棱台和锥台中的至少一种。Further, the convex portion in the concave-convex structure is at least one of a hemispherical shape, a cylindrical shape, a tapered shape, a pyramid shape, a prismatic plate, and a frustum.
进一步地,上述量子点器件与靠近侧壁的内表面通过胶水或者卡扣固定。 Further, the above quantum dot device is fixed to the inner surface close to the side wall by glue or snap.
进一步地,上述侧壁还包括朝向中空部分突出的一凸台结构,量子点器件通过胶水或者卡扣固定于凸台结构上,优选量子点器件通过胶水或者卡扣固定于凸台结构的远离底部的表面上。Further, the sidewall further includes a boss structure protruding toward the hollow portion, and the quantum dot device is fixed on the boss structure by glue or snap, preferably the quantum dot device is fixed to the bottom of the boss structure by glue or snap on the surface.
进一步地,上述凸台结构的远离底部的表面与内表面的距离为0.2-1毫米;优选凸台结构与底部相连,凸台结构的高度为0.2-1毫米。Further, the distance from the bottom surface of the above-mentioned boss structure to the inner surface is 0.2-1 mm; preferably, the boss structure is connected to the bottom, and the height of the boss structure is 0.2-1 mm.
进一步地,上述侧壁的朝向中空部分的表面为侧壁的内表面,底部的内表面和侧壁的内表面的反射率大于或等于90%。Further, the surface of the side wall facing the hollow portion is an inner surface of the side wall, and the inner surface of the bottom portion and the inner surface of the side wall have a reflectance greater than or equal to 90%.
进一步地,上述中空部分的平行于底部的截面面积沿远离底部的方向增加。Further, the cross-sectional area of the hollow portion parallel to the bottom portion increases in a direction away from the bottom portion.
进一步地,上述量子点发光器件还包括透镜,透镜固定在侧壁的远离底部的表面上。Further, the above quantum dot light emitting device further includes a lens fixed on a surface of the sidewall away from the bottom.
根据本发明的另一方面,提供了一种背光模组,包括依次层叠的背板和扩散板,背板朝向扩散板的表面设有一个或多个上述任一种的量子点发光器件。According to another aspect of the present invention, there is provided a backlight module comprising a back sheet and a diffusion sheet which are sequentially stacked, and the back sheet is provided with one or more of the above-described quantum dot light-emitting devices toward the surface of the diffusion sheet.
应用本发明的技术方案,通过将量子点器件设置在中空部分,将LED发光芯片设置在底部的开孔处,使得二者的距离较远,同时,卡槽的底部朝向中空部分的表面具有凹凸结构,增加了LED发光芯片散发出的热量的回流,降低了LED发光芯片工作时产生的热量对量子点器件的影响,因此有效缓解了LED发光芯片的热量导致量子点失效,进而保证了量子点器件在接收LED发光芯片发出的光后被稳定激发并发射出预定量的红光和绿光,进而提升了量子点发光器件的发光效果。另外,凹凸结构的凸部可让LED发光芯片产生的入射光扩散开,使更多的光被反射入量子点器件,提高量子点光发射量。According to the technical solution of the present invention, by disposing the quantum dot device in the hollow portion, the LED light emitting chip is disposed at the opening of the bottom portion, so that the distance between the two is far, and at the same time, the bottom of the card slot has a bump toward the surface of the hollow portion. The structure increases the reflow of heat emitted by the LED light-emitting chip, reduces the influence of the heat generated by the LED light-emitting chip on the quantum dot device, thereby effectively alleviating the heat of the LED light-emitting chip and causing the quantum dot to fail, thereby ensuring the quantum dot After receiving the light emitted by the LED light emitting chip, the device is stably excited and emits a predetermined amount of red light and green light, thereby improving the light emitting effect of the quantum dot light emitting device. In addition, the convex portion of the concave-convex structure can diffuse the incident light generated by the LED light-emitting chip, so that more light is reflected into the quantum dot device, and the quantum dot light emission amount is improved.
附图说明DRAWINGS
构成本申请的一部分的说明书附图用来提供对本发明的进一步理解,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定。在附图中:The accompanying drawings, which are incorporated in the claims of the claims In the drawing:
图1为现有技术直下式背光模组示意图;1 is a schematic diagram of a prior art direct type backlight module;
图2为量子点透镜封装器件结构示意图;2 is a schematic structural view of a quantum dot lens package device;
图3为量子点器件结构示意图;3 is a schematic structural view of a quantum dot device;
图4为卡槽结构示意图一;Figure 4 is a schematic view of the card slot structure;
图5为卡槽结构示意图二;Figure 5 is a schematic view of the card slot structure 2;
图6为卡槽结构示意图三;Figure 6 is a schematic diagram 3 of the card slot structure;
图7为背光模组结构示意图;7 is a schematic structural view of a backlight module;
图8为本发明的LED光强分布图; Figure 8 is a diagram showing the light intensity distribution of the LED of the present invention;
图9示出了本发明实施例1的量子点发光器件的光谱分布图;9 is a view showing a spectral distribution diagram of a quantum dot light-emitting device of Embodiment 1 of the present invention;
图10示出了本发明实施例2的量子点发光器件的光谱分布图;Figure 10 is a view showing a spectral distribution diagram of a quantum dot light-emitting device of Embodiment 2 of the present invention;
图11示出了本发明实施例3的量子点发光器件的光谱分布图;Figure 11 is a view showing the spectral distribution of a quantum dot light-emitting device of Embodiment 3 of the present invention;
图12示出了本发明实施例4的量子点发光器件的光谱分布图;Figure 12 is a view showing the spectral distribution of a quantum dot light-emitting device of Embodiment 4 of the present invention;
图13示出了本发明实施例5的量子点发光器件的光谱分布图;Figure 13 is a view showing the spectral distribution of a quantum dot light-emitting device of Embodiment 5 of the present invention;
图14示出了本发明实施例6的量子点发光器件的光谱分布图;Figure 14 is a view showing the spectral distribution of a quantum dot light-emitting device of Embodiment 6 of the present invention;
图15示出了本发明对比例1的量子点发光器件的光谱分布图;Figure 15 is a view showing the spectral distribution of the quantum dot light-emitting device of Comparative Example 1 of the present invention;
图16示出了本发明对比例2的量子点发光器件的光谱分布图;以及Figure 16 is a view showing the spectral distribution of the quantum dot light-emitting device of Comparative Example 2 of the present invention;
图17示出了本发明对比例3的量子点发光器件的光谱分布图。Fig. 17 is a view showing the spectral distribution of the quantum dot light-emitting device of Comparative Example 3 of the present invention.
以上附图中,1、卡槽;2、凸台结构;3、量子点器件;3a、基底;3b、量子点涂层;3c、水氧阻隔层;4、透镜;6a、底部内表面;6b、侧壁内表面;7、光学膜片;8、量子点膜;9、扩散板;10、LED发光芯片;11、背板;12、量子点发光器件;13、凹凸结构;14、底部;15、侧壁;16、中空部分。In the above drawings, 1, card slot; 2, boss structure; 3, quantum dot device; 3a, substrate; 3b, quantum dot coating; 3c, water oxygen barrier layer; 4, lens; 6a, bottom inner surface; 6b, inner surface of the side wall; 7, optical film; 8, quantum dot film; 9, diffusing plate; 10, LED light emitting chip; 11, back plate; 12, quantum dot light emitting device; 13, concave and convex structure; ; 15, side wall; 16, hollow part.
具体实施方式detailed description
需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本发明。It should be noted that the embodiments in the present application and the features in the embodiments may be combined with each other without conflict. The invention will be described in detail below with reference to the drawings in conjunction with the embodiments.
以下由特定的具体实施例说明本发明的实施方式,熟悉此技术的人士可由本说明书所揭露的内容轻易地了解本发明的其他优点及功效。The embodiments of the present invention are described below by way of specific embodiments, and those skilled in the art can readily understand other advantages and functions of the present invention from the disclosure.
请参阅图2至图8。须知,本说明书所附图式所绘示的结构、比例、大小等,均仅用以配合说明书所揭示的内容,以供熟悉此技术的人士了解与阅读,并非用以限定本发明可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”、“下”、“左”、“右”、“中间”及“一”等的用语,亦仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当亦视为本发明可实施的范畴。Please refer to Figure 2 to Figure 8. It should be understood that the structures, the proportions, the sizes, and the like, which are illustrated in the specification of the present specification, are only used to clarify the contents disclosed in the specification for understanding and reading by those skilled in the art, and are not intended to limit the implementation of the present invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in the present invention without affecting the effects and the achievable purposes of the present invention. The disclosed technical content is within the scope of the disclosure. In the meantime, the terms "upper", "lower", "left", "right", "intermediate" and "one" as used in this specification are also for convenience of description, and are not intended to limit the present. The scope of the invention can be implemented, and the change or adjustment of the relative relationship is considered to be within the scope of the invention.
如图2至图6所示,一种量子点发光器件,所述的量子点发光器件包括卡槽1、量子点器件3、透镜4和一个LED发光芯片10。所述卡槽包括中空部分16,底部14和侧壁15;所述的底部内表面6a为凹凸结构13、底部设有开孔,开孔处容置所述的LED发光芯片10;所述量子点器件3设置于所述的卡槽1的中空部分;所述的透镜4与所述卡槽侧壁的顶部胶黏固定。 As shown in FIG. 2 to FIG. 6, a quantum dot light emitting device includes a card slot 1, a quantum dot device 3, a lens 4, and an LED light emitting chip 10. The card slot includes a hollow portion 16, a bottom portion 14 and a side wall 15; the bottom inner surface 6a is a concave-convex structure 13 and an opening is provided at the bottom, and the LED light-emitting chip 10 is received at the opening; the quantum The dot device 3 is disposed in the hollow portion of the card slot 1; the lens 4 is adhesively fixed to the top of the sidewall of the card slot.
卡槽1上端由透镜4封闭,底部只有一个开孔,开孔处容置所述的LED发光芯片。本实施方式中,量子点器件由基底和涂布在基底上的量子点涂层构成。为了更好的防护量子点涂层,量子点器件由基底3a、量子点涂层3b和水氧阻隔层3c依次层叠构成。在其他实施方式中,所述量子点器件可以为量子点光学膜片。The upper end of the card slot 1 is closed by the lens 4, and the bottom has only one opening, and the LED light emitting chip is received at the opening. In this embodiment, the quantum dot device is composed of a substrate and a quantum dot coating coated on the substrate. In order to better protect the quantum dot coating, the quantum dot device is formed by sequentially laminating the substrate 3a, the quantum dot coating 3b, and the water-oxygen barrier layer 3c. In other embodiments, the quantum dot device can be a quantum dot optical film.
优选的实施方式为:所述凹凸结构的凸起结构为半球形、圆柱形、锥形、金字塔形、棱台和锥台中的至少一种,或随机高度凸起,凹凸结构的凸起结构可让LED发光芯片产生的入射光扩散开,且可以提供更好的热回流,降低LED发光芯片工作时产生的热量对量子点器件的影响。所述凹凸结构的凹结构为半球形、圆柱形、锥形、金字塔形、棱台和锥台中的至少一种,或随机深度凹陷,同样可以起到提供更好的热回流,降低LED发光芯片工作时产生的热量对量子点器件影响的效果。In a preferred embodiment, the convex structure of the concave-convex structure is at least one of a hemispherical shape, a cylindrical shape, a conical shape, a pyramid shape, a prismatic structure, and a frustum stage, or a random height protrusion, and the convex structure of the concave and convex structure may be The incident light generated by the LED light-emitting chip is diffused, and can provide better heat reflow, and reduce the influence of the heat generated by the LED light-emitting chip on the quantum dot device. The concave structure of the concave-convex structure is at least one of a hemisphere, a cylinder, a cone, a pyramid, a prism and a frustum, or a random depth depression, which can also provide better heat reflow and reduce the LED light-emitting chip. The effect of heat generated during operation on quantum dot devices.
在本实施方式中,凸起的形状为半球形。在其他实施方式中,参见图5所示,底部内表面的凸起既有锥形中的三角锥形,也有锥台。In the present embodiment, the shape of the protrusion is hemispherical. In other embodiments, referring to Figure 5, the projections on the inner surface of the bottom have both a triangular pyramid shape in the cone and a frustum.
在本实施方式中,量子点发光器件的固定方式为:所述侧壁还包括一凸台结构2,所述的凸台结构的高度为0.2-1毫米。所述的量子点发光器件通过胶水固定于所述凸台结构2上。在其他实施方式中,量子点发光器件通过卡扣固定于所述凸台结构上。In this embodiment, the quantum dot light-emitting device is fixed in such a manner that the sidewall further includes a boss structure 2, and the height of the boss structure is 0.2-1 mm. The quantum dot light emitting device is fixed to the boss structure 2 by glue. In other embodiments, the quantum dot light emitting device is affixed to the boss structure by snaps.
在其他实施方式中,可以不设置凸台结构,而是将所述的量子点发光器件与所述底部的内表面于两端通过胶水或者卡扣固定优选的实施方式为:所述侧壁的内表面为垂直面,斜面和弧形面。In other embodiments, the bump structure may not be provided, but the quantum dot light-emitting device and the inner surface of the bottom portion are fixed by glue or snap at both ends. The inner surface is a vertical surface, a sloped surface and a curved surface.
为实现上述目的及其他相关目的,本发明提供的第二种技术方案是:一种背光模组,包括依次层叠的背板和扩散板,所述背板朝向扩散板的表面设有多个上述技术方案所述的量子点发光器件。In order to achieve the above and other related objects, the second technical solution provided by the present invention is: a backlight module comprising a back plate and a diffusion plate which are sequentially stacked, and the back plate is provided with a plurality of the above-mentioned surfaces facing the diffusion plate. A quantum dot light emitting device according to the technical solution.
优选的实施方式为:所述LED发光芯片为蓝光LED发光芯片,主波长范围为400~480nm。LED发光芯片可通过卡槽的底部的开孔入射光线,激发量子点器件。In a preferred embodiment, the LED light emitting chip is a blue LED light emitting chip, and the main wavelength ranges from 400 to 480 nm. The LED light-emitting chip can inject light through the opening at the bottom of the card slot to excite the quantum dot device.
优选的实施方式为:所述侧壁内表面6b和底部内表面6a的反射率大于或等于90%。可使用反射率较高的材质制作卡槽,或在用其他材料制作卡槽时,在卡槽的内表面即侧壁内表面6b和底部内表面6a涂覆高漫反射的涂层。A preferred embodiment is that the reflectance of the side wall inner surface 6b and the bottom inner surface 6a is greater than or equal to 90%. The card slot can be made of a material having a higher reflectance, or a highly diffuse reflection coating can be applied to the inner surface of the card slot, that is, the inner wall surface 6b and the bottom inner surface 6a of the card slot when the card groove is made of other materials.
参见附图7所示,一种背光模组,包括依次层叠的背板和扩散板,所述背板朝向扩散板的表面设有多个量子点透镜封装器件12。扩散板上可以设置其他光学膜片7。背板上设置多个量子点透镜封装器件,以取代整片的量子点膜,从而可以降低背光模组的制造成本。Referring to FIG. 7, a backlight module includes a back plate and a diffusion plate which are sequentially stacked, and the back plate is provided with a plurality of quantum dot lens package devices 12 toward the surface of the diffusion plate. Other optical films 7 may be provided on the diffuser plate. A plurality of quantum dot lens package devices are disposed on the back plate to replace the entire quantum dot film, thereby reducing the manufacturing cost of the backlight module.
蓝光LED各个角度的光强分布如图8所示,角度为量子点膜所在平面的法线与蓝光LED出射光线的夹角,图8中X轴代表辐射角度,Y轴代表相对光强。采用本专利设计方案,使LED光型分布在偏离法线方向0°的大角度60°-80°时的光强度,依然能够与法线方向的光强度相当,即可以消除灯影不均问题。该光型分布,可以达到理想的A(angle)/P(pitch)比值,合理 排布直下式LED的分布,减少LED的使用数量,消除LED灯组之间的明暗差现象,改善背光模组的光学画面品味。The light intensity distribution of each angle of the blue LED is shown in Fig. 8. The angle is the angle between the normal of the plane of the quantum dot film and the light emitted by the blue LED. In Fig. 8, the X axis represents the radiation angle, and the Y axis represents the relative light intensity. According to the design of the patent, the light intensity of the LED light pattern distributed at a large angle of 60°-80° from the normal direction of 0° can still be equivalent to the light intensity in the normal direction, that is, the unevenness of the lamp shadow can be eliminated. The light pattern distribution can achieve the ideal A (angle) / P (pitch) ratio, reasonable Distributing the distribution of direct-lit LEDs, reducing the number of LEDs used, eliminating the difference between the LEDs and the optical image of the backlight module.
上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。The above-described embodiments are merely illustrative of the principles of the invention and its effects, and are not intended to limit the invention. Modifications or variations of the above-described embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and scope of the invention will be covered by the appended claims.
在本申请一种典型的实施方式中,提供了一种量子点发光器件,如图2所示,该量子点发光器件包括卡槽1、量子点器件3和n1个LED发光芯片10;卡槽1包括中空部分16、底部14和侧壁15,底部14和侧壁15连接且环绕形成中空部分16,底部14设有n2个开孔,各开孔处容置n3个LED发光芯片10,并且底部14的朝向中空部分16的表面为具有凹凸结构13的内表面,其中n1、n2和n3均为整数,且n1≥n2≥1,n1≥n3≥1;量子点器件3设置于中空部分16。In an exemplary embodiment of the present application, a quantum dot light emitting device is provided. As shown in FIG. 2, the quantum dot light emitting device includes a card slot 1, a quantum dot device 3, and n1 LED light emitting chips 10; 1 includes a hollow portion 16, a bottom portion 14 and a side wall 15, the bottom portion 14 and the side wall 15 are connected and surround the hollow portion 16, and the bottom portion 14 is provided with n2 openings, each of which accommodates n3 LED light-emitting chips 10, and The surface of the bottom portion 14 facing the hollow portion 16 is an inner surface having the uneven structure 13 in which n1, n2 and n3 are integers, and n1 ≥ n2 ≥ 1, n1 ≥ n3 ≥ 1; the quantum dot device 3 is disposed in the hollow portion 16 .
本申请通过将量子点器件设置在中空部分,将LED发光芯片设置在底部的开孔处,使得二者的距离较远,同时,卡槽1的底部14朝向中空部分16的表面具有凹凸结构13,增加了LED发光芯片散发出的热量的回流,降低了LED发光芯片工作时产生的热量对量子点器件的影响,因此有效缓解了LED发光芯片的热量导致量子点失效,进而保证了量子点器件在接收LED发光芯片发出的光后被稳定激发并发射出预定量的红光和绿光,进而提升了量子点发光器件的发光效果。另外,凹凸结构的凸部可让LED发光芯片产生的入射光扩散开,使更多的光被反射入量子点器件,提高量子点光发射量。In the present application, the quantum dot device is disposed in the hollow portion, and the LED light emitting chip is disposed at the opening of the bottom portion so that the distance between the two is far. At the same time, the bottom portion 14 of the card slot 1 has the concave-convex structure 13 toward the surface of the hollow portion 16. , increasing the return of heat emitted by the LED light-emitting chip, reducing the influence of the heat generated by the LED light-emitting chip on the quantum dot device, thereby effectively alleviating the heat of the LED light-emitting chip and causing the quantum dot to fail, thereby ensuring the quantum dot device After receiving the light emitted by the LED light-emitting chip, it is stably excited and emits a predetermined amount of red light and green light, thereby improving the light-emitting effect of the quantum dot light-emitting device. In addition, the convex portion of the concave-convex structure can diffuse the incident light generated by the LED light-emitting chip, so that more light is reflected into the quantum dot device, and the quantum dot light emission amount is improved.
在本申请的一种优选的实施例中,如图3所示,上述量子点器件包括依次叠置的基底3a、量子点涂层3b和水氧阻隔层3c,基底3a靠近底部14设置。量子点以涂层的方式设置在基底3a上,进一步远离了LED发光芯片,且量子点涂层3b上还设置有水氧阻隔层3c以保护量子点,避免了水氧侵蚀造成的量子点失效。In a preferred embodiment of the present application, as shown in FIG. 3, the above quantum dot device includes a substrate 3a, a quantum dot coating 3b, and a water and oxygen barrier layer 3c which are sequentially stacked, and the substrate 3a is disposed near the bottom portion 14. The quantum dots are disposed on the substrate 3a in a coating manner, further away from the LED light-emitting chip, and the quantum dot coating 3b is further provided with a water-oxygen barrier layer 3c to protect the quantum dots, thereby avoiding quantum dot failure caused by water and oxygen erosion. .
上述凹凸结构的主要作用是用于热回流,其可以采用多种方式,优选上述凹凸结构13中的凸部为半球形、圆柱形、锥形、金字塔形、棱台和锥台中的至少一种。上述凸部的结构相对规则,便于制作。优选上述凸部的高度0.1~1毫米。The main function of the above-mentioned uneven structure is for heat reflow, which can be used in various manners. Preferably, the convex portion in the above-mentioned uneven structure 13 is at least one of a hemispherical shape, a cylindrical shape, a conical shape, a pyramid shape, a prismatic plate and a frustum. . The structure of the above convex portion is relatively regular and is easy to manufacture. Preferably, the height of the convex portion is 0.1 to 1 mm.
为了简化装置结构,优选上述量子点器件3与靠近侧壁15的内表面通过胶水或者卡扣固定。In order to simplify the structure of the device, it is preferable that the above quantum dot device 3 and the inner surface close to the side wall 15 are fixed by glue or snap.
另外,为了进一步增加量子点器件和LED发光芯片的距离,如图4至6所示,优选上述侧壁15还包括朝向中空部分突出的一凸台结构2,量子点器件3通过胶水或者卡扣固定于凸台结构2上。进一步优选量子点器件3通过胶水或者卡扣固定于凸台结构2的远离底部的表面上。In addition, in order to further increase the distance between the quantum dot device and the LED light emitting chip, as shown in FIGS. 4 to 6, it is preferable that the sidewall 15 further includes a stud structure 2 protruding toward the hollow portion, and the quantum dot device 3 is glued or buckled. It is fixed to the boss structure 2. It is further preferred that the quantum dot device 3 is fixed to the surface of the boss structure 2 away from the bottom by glue or snap.
在不对发光效果产生负面影响的前提下,优选上述凸台结构2的远离底部14的表面与内表面的距离为0.2-1毫米,以尽可能减少LED发光芯片的热量对于量子点器件的影响。为了 进一步简化结构并避免凸台结构2对于光线的遮蔽,优选上述凸台结构2与底部14相连,凸台结构2的高度为0.2-1毫米。On the premise that the illuminating effect is not adversely affected, it is preferable that the distance from the surface of the above-mentioned boss structure 2 away from the bottom portion 14 to the inner surface is 0.2-1 mm to minimize the influence of the heat of the LED light-emitting chip on the quantum dot device. In order Further simplifying the structure and avoiding the shielding of the light by the boss structure 2, it is preferable that the above-mentioned boss structure 2 is connected to the bottom portion 14, and the height of the boss structure 2 is 0.2-1 mm.
在本申请一种优选的实施例中,为了提高反射入量子点器件的光量,将侧壁15的朝向中空部分的表面命名为侧壁15的内表面,优选底部14的内表面和侧壁15的内表面的反射率大于或等于90%。可使用反射率较高的材质制作卡槽1,或在用其他材料制作卡槽1时,在卡槽1的内表面即侧壁15内表面和底部14内表面涂覆高漫反射的涂层。In a preferred embodiment of the present application, in order to increase the amount of light reflected into the quantum dot device, the surface of the side wall 15 facing the hollow portion is named the inner surface of the side wall 15, preferably the inner surface of the bottom portion 14 and the side wall 15. The reflectance of the inner surface is greater than or equal to 90%. The card slot 1 can be made of a material having a high reflectance, or a high diffuse reflection coating can be applied to the inner surface of the card slot 1 and the inner surface of the side wall 15 and the inner surface of the bottom portion 14 when the card slot 1 is made of other materials. .
另外,为了使量子点器件发射出的光线通过透镜均匀射出,优选上述中空部分16的平行于底部14的截面面积沿远离底部14的方向增加。In addition, in order to uniformly emit light emitted from the quantum dot device through the lens, it is preferable that the cross-sectional area of the hollow portion 16 parallel to the bottom portion 14 increases in a direction away from the bottom portion 14.
进一步地,如图2所示,上述量子点发光器件还包括透镜3,透镜3固定在侧壁15的远离底部14的表面上。Further, as shown in FIG. 2, the above quantum dot light emitting device further includes a lens 3 fixed to a surface of the side wall 15 away from the bottom portion 14.
根据本发明的另一方面,提供了一种背光模组,如图7所示,该背光模组包括依次层叠的背板11和扩散板9,背板11朝向扩散板9的表面设有一个或多个上述任一种的量子点发光器件12。According to another aspect of the present invention, a backlight module is provided. As shown in FIG. 7, the backlight module includes a back plate 11 and a diffusion plate 9 which are sequentially stacked, and the back plate 11 is provided with a surface facing the diffusion plate 9. Or a plurality of quantum dot light-emitting devices 12 of any of the above.
上述LED发光芯片为蓝光LED发光芯片,优选其主波长范围为400~480nm,LED发光芯片可通过卡槽的底部的开孔入射光线,激发量子点器件。The LED light emitting chip is a blue LED light emitting chip, preferably having a dominant wavelength range of 400 to 480 nm, and the LED light emitting chip can inject light through the opening of the bottom of the card slot to excite the quantum dot device.
以下将结合实施例和对比例,进一步说明本申请的有益效果。Advantageous effects of the present application will be further described below in conjunction with the examples and comparative examples.
以下各实施例和对比例所采用的红光量子点和绿光量子点来自杭州纳晶科技有限公司,LED发光芯片来自晶元光电股份有限公司。The red light quantum dots and green light quantum dots used in the following examples and comparative examples were from Hangzhou Najing Technology Co., Ltd., and the LED light emitting chips were from Jingyuan Optoelectronics Co., Ltd.
实施例1Example 1
量子点发光器件的结构如图2所示,其中,LED发光芯片共7个,底部中心设置有一个开孔,凹凸结构中的凸部为半球形,半球形的高度为0.5毫米,凸台结构与底部相连,凸台结构的高度为1毫米,底部的内表面和所述侧壁的内表面为白色PPA(聚邻苯二甲酰胺)表面。The structure of the quantum dot light-emitting device is as shown in FIG. 2, wherein there are 7 LED light-emitting chips, and an opening is arranged at the bottom center, and the convex portion in the concave-convex structure is hemispherical, the height of the hemisphere is 0.5 mm, and the boss structure Connected to the bottom, the height of the boss structure is 1 mm, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
实施例2Example 2
量子点发光器件的结构如图2所示,其中,LED发光芯片来共7个,底部中心设置有一个开孔,凹凸结构中的凸部为半球形,半球形的高度为0.1毫米,凸台结构与底部相连,凸台结构的高度为0.2毫米,底部的内表面和所述侧壁的内表面为白色PPA(聚邻苯二甲酰胺)表面。The structure of the quantum dot light-emitting device is as shown in FIG. 2, wherein there are 7 LED light-emitting chips, and an opening is arranged at the bottom center, and the convex portion in the concave-convex structure is hemispherical, the height of the hemisphere is 0.1 mm, and the boss The structure is attached to the bottom, the height of the boss structure is 0.2 mm, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
实施例3Example 3
量子点发光器件的结构如图2所示,其中,LED发光芯片共7个,底部中心设置有一个开孔,凹凸结构中的凸部为圆柱形,圆柱形的高度为0.5毫米,凸台结构与底部相连,凸台结构的高度为1毫米,底部的内表面和所述侧壁的内表面为白色PPA(聚邻苯二甲酰胺)表面。The structure of the quantum dot light-emitting device is as shown in FIG. 2, wherein there are 7 LED light-emitting chips, and an opening is arranged at the center of the bottom, and the convex portion in the concave-convex structure is cylindrical, and the height of the cylindrical body is 0.5 mm, and the boss structure Connected to the bottom, the height of the boss structure is 1 mm, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
实施例4 Example 4
量子点发光器件的结构如图2所示,其中,LED发光芯片共7个,底部中心设置有一个开孔,围绕中心在同一个圆周上设置6个开孔,每个开孔只有一个LED发光芯片,圆周的半径为底部的半径的一半,凹凸结构中的凸部为圆柱形,圆柱形的高度为0.5毫米,凸台结构与底部相连,凸台结构的高度为1毫米,底部的内表面和所述侧壁的内表面为白色PPA(聚邻苯二甲酰胺)表面。The structure of the quantum dot light-emitting device is as shown in Fig. 2. Among them, there are 7 LED light-emitting chips, and an opening is arranged at the bottom center. Six openings are arranged on the same circumference around the center, and only one LED is illuminated in each opening. The radius of the circumference of the chip is half of the radius of the bottom, the convex portion of the concave-convex structure is cylindrical, the height of the cylindrical body is 0.5 mm, the boss structure is connected to the bottom, the height of the boss structure is 1 mm, and the inner surface of the bottom portion And the inner surface of the side wall is a white PPA (polyphthalamide) surface.
实施例5Example 5
量子点发光器件的结构如图2所示,其中,LED发光芯片共7个,底部中心设置有一个开孔,凹凸结构中的凸部为半球形,半球形的高度为0.2毫米,凸台结构与底部相连,凸台结构的高度为1毫米,底部的内表面和所述侧壁的内表面为白色PPA(聚邻苯二甲酰胺)表面。The structure of the quantum dot light-emitting device is shown in Fig. 2. Among them, there are 7 LED light-emitting chips, and an opening is arranged at the bottom center. The convex portion in the concave-convex structure is hemispherical, the height of the hemisphere is 0.2 mm, and the boss structure Connected to the bottom, the height of the boss structure is 1 mm, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
实施例6Example 6
量子点发光器件的结构如图2所示,其中,LED发光芯片共7个,底部中心设置有一个开孔,凹凸结构中的凸部为半球形,半球形的高度为1毫米,没有设计凸台结构,量子点器件设置在半球形的顶部,底部的内表面和所述侧壁的内表面为白色PPA(聚邻苯二甲酰胺)表面。The structure of the quantum dot light-emitting device is as shown in Fig. 2. Among them, there are 7 LED light-emitting chips, and an opening is arranged at the bottom center. The convex portion in the concave-convex structure is hemispherical, and the height of the hemisphere is 1 mm. In the stage structure, the quantum dot device is disposed on the top of the hemisphere, and the inner surface of the bottom and the inner surface of the side wall are white PPA (polyphthalamide) surfaces.
对比例1Comparative example 1
与实施例1的区别在于,将LED发光芯片设置在底部的内表面上,底部没有开孔。The difference from Embodiment 1 is that the LED light-emitting chip is disposed on the inner surface of the bottom without an opening at the bottom.
对比例2Comparative example 2
与实施例1的区别在于,没有设置量子点器件。The difference from Embodiment 1 is that no quantum dot device is provided.
对比例3Comparative example 3
量子点发光器件的结构如图2所示,其中,LED发光芯片共7个,底部中心设置有一个开孔,底部的内表面为平面,量子点器件底部的内表面上,底部的内表面和所述侧壁的内表面为白色PPA(聚邻苯二甲酰胺)表面。The structure of the quantum dot light-emitting device is as shown in Fig. 2. Among them, there are 7 LED light-emitting chips, one opening is arranged at the bottom center, the inner surface of the bottom is flat, the inner surface of the bottom of the quantum dot device, the inner surface of the bottom and The inner surface of the side wall is a white PPA (polyphthalamide) surface.
采用积分球光谱辐射计,参照GB/T 24824-2009国家标准相关要求检测实施例1至5以及对比例1和2的量子点发光器件的光谱分布,检测结果依次记录在图9至17中。Using the integrating sphere spectroradiometer, the spectral distributions of the quantum dot light-emitting devices of Examples 1 to 5 and Comparative Examples 1 and 2 were examined with reference to the relevant requirements of GB/T 24824-2009 national standards, and the results of the detection were sequentially recorded in FIGS. 9 to 17.
根据图9、图14、图15、图16和图17的比较可以看出,实施例1的蓝光波段450nm峰值与对比例1相当,但绿光540nm和红光630nm峰值比对比例1要高出约15%,充分证明了实施例1开孔、凹凸结构和凸台结构提升了红光和绿光的激发,说明将LED发光芯片设置在底部的开孔中,有效缓解了LED发光芯片的热量导致的量子点失效。根据图9至图11的比较可以看出,凸台的高度对于量子点发光器件的红光和绿光激发效果也产生了影响,实施例1凸台高度1毫米的效果比实施例2凸台高度0.2mm对红光和绿光的激发效果高出约5%,这说明凸台的高度的增加进一步缓解了LED发光芯片的热量导致量子点失效。根据图9和图13的比较可以看出,凹凸结构的凸部的高度对于量子点发光器件的红光和绿光激发效果也产生了影响,实施例1的半球形高度为0.5毫米,实施例5的半球形高度为0.2毫米,实施例1对 红光和绿光的加法效果高出约3%,说明半球形高度的增加有利于进一步缓解LED发光芯片的热量导致量子点失效。根据图9和图12对比可知,凸台的选取的结构形状对量子点器件的发光没有影响。以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。 As can be seen from the comparison of FIG. 9, FIG. 14, FIG. 15, FIG. 16 and FIG. 17, the blue light band 450 nm peak of Example 1 is comparable to that of Comparative Example 1, but the green light 540 nm and the red light 630 nm peak are higher than the comparative example 1. About 15%, it is fully proved that the opening, the concave-convex structure and the stud structure of the embodiment 1 enhance the excitation of red light and green light, indicating that the LED light-emitting chip is disposed in the opening of the bottom, which effectively alleviates the LED light-emitting chip. The quantum dot failure caused by heat. It can be seen from the comparison of FIG. 9 to FIG. 11 that the height of the boss also affects the red light and green light excitation effects of the quantum dot light-emitting device, and the effect of the boss height of 1 mm is higher than that of the embodiment 2 boss. The height of 0.2mm is about 5% higher for the excitation of red and green light, which means that the increase in the height of the bump further alleviates the heat of the LED light-emitting chip and causes the quantum dot to fail. It can be seen from the comparison of FIG. 9 and FIG. 13 that the height of the convex portion of the uneven structure also affects the red light and green light excitation effects of the quantum dot light-emitting device, and the hemispherical height of Embodiment 1 is 0.5 mm, The hemispherical height of 5 is 0.2 mm, and the pair of Embodiment 1 The addition effect of red light and green light is about 3% higher, indicating that the increase in hemispherical height is beneficial to further alleviate the heat of the LED light-emitting chip and cause quantum dot failure. As can be seen from the comparison of Figures 9 and 12, the selected structural shape of the land has no effect on the illumination of the quantum dot device. The above description is only the preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes can be made to the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and scope of the present invention are intended to be included within the scope of the present invention.

Claims (18)

  1. 一种量子点发光器件,其特征在于:A quantum dot light emitting device characterized by:
    所述的量子点发光器件包括卡槽、量子点器件、透镜和至少一个LED发光芯片;The quantum dot light emitting device comprises a card slot, a quantum dot device, a lens and at least one LED light emitting chip;
    所述卡槽包括中空部分,底部和侧壁,所述底部设有开孔,开孔处容置所述的LED发光芯片,并且所述底部的内表面为凹凸结构;The card slot includes a hollow portion, a bottom portion and a side wall, the bottom portion is provided with an opening, the LED light emitting chip is received at the opening, and the inner surface of the bottom portion is a concave-convex structure;
    所述量子点器件设置于所述的卡槽的中空部分;The quantum dot device is disposed in a hollow portion of the card slot;
    所述的透镜与所述卡槽侧壁的顶部胶黏固定。The lens is adhesively fixed to the top of the sidewall of the card slot.
  2. 根据权利要求1所述的量子点发光器件,其特征在于:所述量子点器件包括基底、量子点涂层和水氧阻隔层。The quantum dot light emitting device of claim 1 wherein said quantum dot device comprises a substrate, a quantum dot coating, and a water oxygen barrier layer.
  3. 根据权利要求1所述的量子点发光器件,其特征在于:所述的凹凸结构为半球形、圆柱形、锥形、金字塔形、棱台和锥台中的至少一种。The quantum dot light-emitting device according to claim 1, wherein the uneven structure is at least one of a hemispherical shape, a cylindrical shape, a conical shape, a pyramid shape, a prismatic plate, and a frustum.
  4. 根据权利要求1-3任意一条所述的量子点发光器件,其特征在于:所述的量子点器件与所述底部的内表面于两端通过胶水或者卡扣固定。The quantum dot light-emitting device according to any one of claims 1 to 3, wherein the quantum dot device and the inner surface of the bottom are fixed at both ends by glue or snap.
  5. 根据权利要求1-3任意一条所述的量子点发光器件,其特征在于:所述侧壁还包括一凸台结构,所述的量子点发光器件通过胶水或者卡扣固定于所述凸台结构上。The quantum dot light-emitting device according to any one of claims 1 to 3, wherein the sidewall further comprises a stud structure, and the quantum dot light-emitting device is fixed to the boss structure by glue or snap on.
  6. 根据权利要求5所述的量子点发光器件,其特征在于:所述的凸台结构的高度为0.2-1毫米。The quantum dot light-emitting device according to claim 5, wherein said boss structure has a height of 0.2 to 1 mm.
  7. 根据权利要求1所述的量子点发光器件,其特征在于:所述底部内表面和侧壁内表面的反射率大于或等于90%。The quantum dot light-emitting device according to claim 1, wherein the bottom inner surface and the inner surface of the side wall have a reflectance greater than or equal to 90%.
  8. 一种背光模组,其特征在于:包括依次层叠的背板和扩散板,所述背板朝向扩散板的表面设有多个权利要求1-7中任一项所述的量子点发光器件。A backlight module comprising: a back plate and a diffusion plate which are sequentially stacked, wherein the back plate is provided with a plurality of the quantum dot light-emitting devices according to any one of claims 1 to 7 facing the surface of the diffusion plate.
  9. 一种量子点发光器件,其特征在于:A quantum dot light emitting device characterized by:
    所述量子点发光器件包括卡槽、量子点器件和n1个LED发光芯片;The quantum dot light emitting device comprises a card slot, a quantum dot device and n1 LED light emitting chips;
    所述卡槽包括中空部分、底部和侧壁,所述底部和所述侧壁连接且环绕形成所述中空部分,所述底部设有n2个开孔,各所述开孔处容置n3个所述LED发光芯片,并且所述底部的朝向所述中空部分的表面为具有凹凸结构的内表面,其中n1、n2和n3均为整数,且n1≥n2≥1,n1≥n3≥1;The card slot includes a hollow portion, a bottom portion and a side wall, the bottom portion and the side wall are connected and surround the hollow portion, and the bottom portion is provided with n2 openings, and each of the opening holes accommodates n3 The LED light-emitting chip, and the surface of the bottom portion facing the hollow portion is an inner surface having a concave-convex structure, wherein n1, n2 and n3 are integers, and n1≥n2≥1, n1≥n3≥1;
    所述量子点器件设置于所述中空部分。The quantum dot device is disposed in the hollow portion.
  10. 根据权利要求9所述的量子点发光器件,其特征在于:所述量子点器件包括依次叠置的基底、量子点涂层和水氧阻隔层,所述基底靠近所述底部设置。 The quantum dot light-emitting device according to claim 9, wherein said quantum dot device comprises a substrate, a quantum dot coating, and a water-oxygen barrier layer which are sequentially stacked, said substrate being disposed adjacent to said bottom portion.
  11. 根据权利要求9所述的量子点发光器件,其特征在于:所述凹凸结构中的凸部为半球形、圆柱形、锥形、金字塔形、棱台和锥台中的至少一种。The quantum dot light-emitting device according to claim 9, wherein the convex portion in the uneven structure is at least one of a hemisphere, a cylinder, a cone, a pyramid, a prism, and a frustum.
  12. 根据权利要求9-11中任意一项所述的量子点发光器件,其特征在于:所述量子点器件与靠近所述侧壁的所述内表面通过胶水或者卡扣固定。The quantum dot light-emitting device according to any one of claims 9-11, wherein the quantum dot device is fixed to the inner surface adjacent to the side wall by glue or snap.
  13. 根据权利要求9-11中任意一项所述的量子点发光器件,其特征在于:所述侧壁还包括朝向所述中空部分突出的一凸台结构,所述量子点器件通过胶水或者卡扣固定于所述凸台结构上,优选所述量子点器件通过胶水或者卡扣固定于所述凸台结构的远离所述底部的表面上。The quantum dot light-emitting device according to any one of claims 9-11, wherein the side wall further comprises a stud structure protruding toward the hollow portion, the quantum dot device being glued or snapped Fixed to the boss structure, preferably the quantum dot device is fixed to the surface of the boss structure away from the bottom by glue or snap.
  14. 根据权利要求13所述的量子点发光器件,其特征在于:所述凸台结构的远离所述底部的表面与所述内表面的距离为0.2-1毫米;优选所述凸台结构与所述底部相连,所述凸台结构的高度为0.2-1毫米。The quantum dot light-emitting device according to claim 13, wherein a distance from a surface of the boss structure away from the bottom portion to the inner surface is 0.2-1 mm; preferably the boss structure and the The bottom is connected, and the height of the boss structure is 0.2-1 mm.
  15. 根据权利要求9所述的量子点发光器件,其特征在于:所述侧壁的朝向所述中空部分的表面为所述侧壁的内表面,所述底部的内表面和所述侧壁的内表面的反射率大于或等于90%。A quantum dot light-emitting device according to claim 9, wherein a surface of said side wall facing said hollow portion is an inner surface of said side wall, an inner surface of said bottom portion and an inner side of said side wall The reflectance of the surface is greater than or equal to 90%.
  16. 根据权利要求9所述的量子点发光器件,其特征在于:所述中空部分的平行于所述底部的截面面积沿远离所述底部的方向增加。The quantum dot light-emitting device according to claim 9, wherein a cross-sectional area of said hollow portion parallel to said bottom portion increases in a direction away from said bottom portion.
  17. 根据权利要求9所述的量子点发光器件,其特征在于:所述量子点发光器件还包括透镜,所述透镜固定在所述侧壁的远离所述底部的表面上。The quantum dot light-emitting device according to claim 9, wherein said quantum dot light-emitting device further comprises a lens fixed to a surface of said side wall away from said bottom portion.
  18. 一种背光模组,其特征在于:包括依次层叠的背板和扩散板,所述背板朝向所述扩散板的表面设有一个或多个权利要求9-17中任一项所述的量子点发光器件。 A backlight module comprising: a backing plate and a diffusing plate stacked in sequence, wherein the backing plate is provided with one or more of the quantum according to any one of claims 9-17 toward a surface of the diffusing plate Point light emitting device.
PCT/CN2017/093755 2016-08-31 2017-07-20 Quantum dot light-emitting device and backlight module WO2018040781A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610785716.6 2016-08-31
CN201610785716.6A CN106324905A (en) 2016-08-31 2016-08-31 Quantum-dot light-emitting device and backlight module

Publications (1)

Publication Number Publication Date
WO2018040781A1 true WO2018040781A1 (en) 2018-03-08

Family

ID=57789893

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/093755 WO2018040781A1 (en) 2016-08-31 2017-07-20 Quantum dot light-emitting device and backlight module

Country Status (2)

Country Link
CN (1) CN106324905A (en)
WO (1) WO2018040781A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108761919A (en) * 2018-07-13 2018-11-06 安徽芯瑞达科技股份有限公司 A kind of efficient backlight module
CN110262124A (en) * 2019-05-29 2019-09-20 安徽赛迈特光电股份有限公司 Quantum dot liquid crystal display device
CN111897163A (en) * 2020-08-20 2020-11-06 安徽芯瑞达科技股份有限公司 Backlight module device for realizing ultra-low OD by matching LED with lens
CN113721385A (en) * 2021-08-18 2021-11-30 安徽芯瑞达科技股份有限公司 Mini LED chip backlight module capable of emitting light uniformly
CN114019717A (en) * 2021-09-18 2022-02-08 信阳市谷麦光电子科技有限公司 High-efficiency stable quantum dot light-emitting LED

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106324905A (en) * 2016-08-31 2017-01-11 张家港康得新光电材料有限公司 Quantum-dot light-emitting device and backlight module
CN108279531B (en) * 2018-01-23 2019-03-22 深圳市隆利科技股份有限公司 A kind of mobile phone bottom luminescent quantum dot backlight
CN109212831B (en) * 2018-10-23 2021-08-17 厦门天马微电子有限公司 Backlight module and display device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101447543A (en) * 2004-12-24 2009-06-03 京瓷株式会社 Light-emitting device and lighting device
US20140103796A1 (en) * 2012-09-26 2014-04-17 Intematix Corporation Led-based lighting arrangements
CN105549262A (en) * 2016-02-03 2016-05-04 青岛海信电器股份有限公司 Backlight unit, backlight source module and liquid-crystal display device
US20160218254A1 (en) * 2015-01-27 2016-07-28 Cree, Inc. High color-saturation lighting devices with enhanced long wavelength illumination
CN106324905A (en) * 2016-08-31 2017-01-11 张家港康得新光电材料有限公司 Quantum-dot light-emitting device and backlight module

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100880638B1 (en) * 2007-07-06 2009-01-30 엘지전자 주식회사 Light emitting device package
EP2031657A1 (en) * 2007-08-31 2009-03-04 ILED Photoelectronics, Inc. Package structure for a high-luminance light source
CN201307605Y (en) * 2008-12-05 2009-09-09 弘凯光电(深圳)有限公司 LED packaging structure
US9039216B2 (en) * 2010-04-01 2015-05-26 Lg Innotek Co., Ltd. Light emitting device package and light unit having the same
KR101693859B1 (en) * 2010-07-07 2017-01-06 엘지이노텍 주식회사 The light emitting apparatus, the method for manufacturing the same, and the light system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101447543A (en) * 2004-12-24 2009-06-03 京瓷株式会社 Light-emitting device and lighting device
US20140103796A1 (en) * 2012-09-26 2014-04-17 Intematix Corporation Led-based lighting arrangements
US20160218254A1 (en) * 2015-01-27 2016-07-28 Cree, Inc. High color-saturation lighting devices with enhanced long wavelength illumination
CN105549262A (en) * 2016-02-03 2016-05-04 青岛海信电器股份有限公司 Backlight unit, backlight source module and liquid-crystal display device
CN106324905A (en) * 2016-08-31 2017-01-11 张家港康得新光电材料有限公司 Quantum-dot light-emitting device and backlight module

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108761919A (en) * 2018-07-13 2018-11-06 安徽芯瑞达科技股份有限公司 A kind of efficient backlight module
CN108761919B (en) * 2018-07-13 2023-10-31 安徽芯瑞达科技股份有限公司 High-efficiency backlight module
CN110262124A (en) * 2019-05-29 2019-09-20 安徽赛迈特光电股份有限公司 Quantum dot liquid crystal display device
CN110262124B (en) * 2019-05-29 2021-10-12 安徽赛迈特光电股份有限公司 Quantum dot liquid crystal display device
CN111897163A (en) * 2020-08-20 2020-11-06 安徽芯瑞达科技股份有限公司 Backlight module device for realizing ultra-low OD by matching LED with lens
CN113721385A (en) * 2021-08-18 2021-11-30 安徽芯瑞达科技股份有限公司 Mini LED chip backlight module capable of emitting light uniformly
CN114019717A (en) * 2021-09-18 2022-02-08 信阳市谷麦光电子科技有限公司 High-efficiency stable quantum dot light-emitting LED
CN114019717B (en) * 2021-09-18 2023-10-24 信阳市谷麦光电子科技有限公司 High-efficient stable quantum dot luminous LED

Also Published As

Publication number Publication date
CN106324905A (en) 2017-01-11

Similar Documents

Publication Publication Date Title
WO2018040781A1 (en) Quantum dot light-emitting device and backlight module
WO2018040780A1 (en) Quantum dot light-emitting device and backlight module
US9970630B2 (en) Quantum dot light-emitting device and display device
JP5529425B2 (en) Apparatus and method for multi-plane light diffuser and display panel using the same
JP4589361B2 (en) Light source cube, flat light source unit and liquid crystal display device using the same
JP5329548B2 (en) Thin backlight using thin side-emitting LEDs
TWI422861B (en) Light control lens and light source device using the same
KR101908651B1 (en) Back light unit
JP5849193B2 (en) Light emitting device, surface light source, liquid crystal display device, and lens
CN103629627A (en) Nanophosphor sheet and backlight device
US20140153286A1 (en) Light guide plate, backlight module and display device
JP2006229228A (en) Multi-chip light emitting diode unit, backlight unit and liquid crystal display device employing the same
JP2006286639A (en) Light emitting device having a plurality of overlapping panels forming recess for emitting light
JP5460665B2 (en) Light emitting diode package
WO2012027928A1 (en) Backlight module and optical component thereof
WO2013120279A1 (en) Light guide plate, backlight module and liquid crystal display device
US11500244B2 (en) Backlight unit using mini LED or micro LED as light source
WO2017211224A1 (en) Light-emitting assembly for backlight module, backlight module and display device
US20210080785A1 (en) Backlight module
JP2015035504A (en) Light source device
WO2013018902A1 (en) Planar illumination light source apparatus using light emitter
EP2764292B1 (en) Lighting module
KR20140089058A (en) Backlight unit
WO2020019856A1 (en) Light panel, backlight module and display apparatus
CN111308778A (en) Backlight unit and display device including the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17845084

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17845084

Country of ref document: EP

Kind code of ref document: A1