WO2018028962A1

WO2018028962A1 - Optoelectronic device

Info

Publication number: WO2018028962A1
Application number: PCT/EP2017/068295
Authority: WO
Inventors: Arne FLEISSNER; Sebastian Wittmann; Erwin Lang
Original assignee: Osram Oled Gmbh
Priority date: 2016-08-09
Filing date: 2017-07-20
Publication date: 2018-02-15
Also published as: DE102016214743A1

Abstract

The invention relates to an optoelectronic device (10) which comprises a substrate (11), a functional layer structure (16) that is designed to generate electromagnetic radiation when supplied with power by a first electrode (14) and a second electrode (15), and a planarized portion (12) for leveling out a roughness of a main face (11a) of the substrate (11) facing the electrodes (14). The optoelectronic device is characterized in that the planarized portion (12) is designed and disposed such that an interface (14a, 15b) of one of the electrodes (14, 15) has a lower roughness in at least one first region (34a, 35a) than in a second region (34b, 35b).

Description

Optoelectronic device

The invention relates to an optoelectronic device for generating electromagnetic radiation.

It is known to arrange a planarization in optoelectronic devices for generating electromagnetic radiation between the substrate and an electrode, by which a roughness of the substrate is compensated.

Object of the present invention is that

Appearance of such an optoelectronic

Device to improve. This object is solved by the features of claim 1. In dependent claims are advantageous

Embodiments specified.

According to at least one embodiment, a

Opto-electronic device for generating

electromagnetic radiation, a preferably flat substrate, a functional layer structure, one on a substrate side facing the functional

Layer structure arranged first electrode and on a side facing away from the substrate of the functional

Layer structure arranged second electrode, and a

Planarization for compensating a roughness of a major surface of the substrate facing the electrodes. The functional layer structure is set up to generate the electromagnetic radiation when the functional layer structure is energized by means of the first electrode and the second electrode. The planarization is configured and arranged such that at least one of the first and second

Electrodes having an interface which has a lower roughness in at least a first region than in a second region. In particular, the planarization can be a planarization layer.

Since the first area has a different roughness than the second area, these areas have a different appearance for a viewer, whereby the

Appearance of the optoelectronic device

made more interesting and can be improved. Preferably, the first region and the second region directly adjoin one another. By way of example, the first region and the second region can directly adjoin one another in a plan view of the substrate. Preferably, the functional layer structure is a continuous one

functional layered structure extending across the first region and the second region as viewed in plan view of the substrate. In other words, the functional layer structure preferably extends uninterruptedly when viewed in a plan view of the substrate in an area that encompasses both the entire first area and the entire second area. Especially

Preferably, both the functional layer structure and the first electrode and the second electrode are continuous and extend in a plan view of the substrate viewed throughout the first region and the second region.

The planarization can for example be designed and arranged such that one facing away from the substrate

Interface of the first electrode in the first region has a lower roughness than in the second region.

In this case, the optoelectronic device is preferably set up, at least part of the generated

emit electromagnetic radiation through the second electrode. In addition, it may be arranged to not emit the generated electromagnetic radiation through the substrate. Alternatively or additionally, the planarization can also be configured and arranged such that a

Substrate-facing interface of the second electrode in the first region has a lower roughness than in the second region. In this case, the optoelectronic device is preferably set up to emit at least part of the generated electromagnetic radiation through the first electrode and the substrate. In addition, it may be arranged to not emit the generated electromagnetic radiation through the second electrode.

The planarization is preferably arranged between the substrate and the first electrode. As a result, a simple structure of the optoelectronic device can be made possible.

The first electrode may comprise or consist of a first electrode layer. Accordingly, can

For example, the first electrode layer on a surface facing away from the substrate in the first region have a lower roughness than in the second region.

The second electrode may comprise or consist of a second electrode layer. Accordingly, can

For example, the second electrode layer on a substrate facing the interface in the first region have a lower roughness than in the second region.

In a preferred embodiment, the first

Electrode, the second electrode, the functional

Layer structure and planarization at least partially, e.g. at least in places, on the main surface of the

Substrate arranged. For example, they can at least partially be in direct or indirect contact with this surface. In particular, they can be coated on this surface according to a layer sequence.

That a layer or an element "on" - synonymous "about" - another layer or another element arranged or applied, may here and hereinafter mean that the one layer or the one element

is arranged directly in direct mechanical and / or electrical contact on the other layer or the other element. Furthermore, it may also mean that the one layer or the one element indirectly

or over the other layer or the other element is arranged. In this case, further layers and / or elements can then be arranged between the one and the other layer or between the one and the other element.

The fact that a layer or an element is arranged "between" two other layers or elements may, here and in the following, mean that the one layer or the one

Element directly in direct mechanical or

electrical contact or in indirect contact with one of the two other layers or elements and in direct mechanical and / or electrical contact or indirect contact with the other of the two other layers or elements. In the case of indirect contact, further layers and / or elements can then be arranged between the one and at least one of the two other layers or between the one and at least one of the two others

Be arranged elements.

The planarization is according to a preferred

Embodiment configured and arranged such that the previously discussed interface in the entire first region is planarized by the planarization and is not planarized in the entire second region by the planarization. This means that according to this preferred

Embodiment, the first electrode in the first region has a lower roughness than that at

Absence of planarization would be the case and having the same roughness in the second region as would be the case in the absence of planarization. The planarization may have at least one recess which causes the second region. This can be completely surrounded by the planarization. Preferably, seen in plan view of the main surface of the substrate, ie, for example seen in a vertical projection on the main surface of the substrate, in the entire first area, the planarization and in the entire second area not the planarization. In other words, the first area and the two areas preferably overlap one another in a plan view of the main area of the substrate

Planarization completely and the second area and the planarization not.

The planarization is according to a preferred

Embodiment designed and arranged such that the previously discussed interface is planarized in the first region by the planarization and is planarized in the second region by the planarization, in particular, it may be configured and arranged such that the previously discussed interface in the entire first region is planarized by the planarization and planarized in the entire second area by the planarization. The different roughnesses in the first region and the second region can be achieved by the planarization of the regions to different degrees

planarized, for example by varying a thickness of the planarization, in particular a layer thickness of a planarization layer forming the planarization. Accordingly, as viewed in plan view of the main surface of the substrate, a planarization layer forming the planarization may have a different layer thickness in the entire first region

as in the entire second area. The planarization is planarized, i. it has a lower roughness on an interface facing away from the substrate than on an interface facing the substrate,

preferably at least a factor of 2 lower, especially preferably by at least a factor of 5 and most preferably by at least a factor of 20.

The average roughness of a reference region, represented by the symbol R _a , indicates the average distance of all points on the surface or interface in the reference region to a center plane. The middle plane cuts the real one

Profile so that the mean distance becomes minimal. The average roughness R _a thus corresponds to the arithmetic mean of the absolute deviation from the medial plane.

The planarization on an interface facing away from the substrate preferably has a roughness of less than or equal to 500 nm, particularly preferably less than or equal to 200 nm and very particularly preferably less than or equal to 50 nm.

The substrate, on the other hand, may have a roughness greater than or equal to 500 nm on the major surface, or greater than or equal to 1000 nm, or even greater than or equal to 5000 nm.

Preferably, the previously discussed interface of the at least one electrode in the first and / or the second region has a reflectivity of at least 50%, preferably at least 80% or even at least 90%, for an electromagnetic radiation impinging on the interface. The

Reflectivity is in each case based on the radiation power. Particularly preferably, the interface in the first and / or the second region has the above-described reflectivity for one or more wavelengths of the

Spectrum of visible light from 380 nm to 780 nm on or in the arithmetic mean over the wavelength range of visible light or in the arithmetic mean of the spectrum of visible light. Likewise particularly preferably, the boundary surface in the area described above has the above-described reflectivity for one or more wavelengths of the electromagnetic radiation which can be generated by the functional layer structure, or with respect to the total radiation power for that of FIG functional layer structure generated electromagnetic radiation.

As a result, a highly reflective electromagnetic device can be realized, wherein the

Reflectance property in the first and the second area is different, in particular because the first area compared to the second area less matt, i. less diffuse, reflected. The reflectivity of the aforementioned

In particular, the interface may refer to a radiation incidence perpendicular to the interface. The reflectivity of the aforesaid interface of the first electrode depends inter alia on the refractive index of the first electrode and on the refractive index of the adjacent layer or layer

Layers off.

Preferably, the optoelectronic device

arranged to represent visible information by cooperation of the first area and the second area, i. a visible to an external viewer

Information. This can, for example, both in one

Operating state and be visible in an inoperative state. The information may be

For example, at least one pattern or a character, in particular a character act.

Preferably, the planarization comprises an organic one

Material. This can be a particularly good

Planarisierungswirkung be achieved. For example, the organic material may be an organic material selected from the following group of materials:

Epoxy resin, acrylate, polyurethane, polyimide, silicone,

Organopolysilazane, polysiloxane, styrene, polyester, polyectone. The planarization may be one from the liquid phase

Processed planarization, that is, to

Providing the planarization was applied a liquid that forms the planarization. Preferably, the optoelectronic device is set up, at least part of the generated

emit electromagnetic radiation in an emission direction, wherein both the first region and the second region when viewing the optoelectronic

Device are visible against the emission direction.

This can ensure that these areas are easy to find for an external viewer. In an operating state of the optoelectronic device, they can be operated on the basis of a lateral variation of a

Property of the emitted electromagnetic radiation, e.g. a brightness distribution and / or a

Color distribution, be visible.

For example, the optoelectronic device

be set up, the part of the generated electromagnetic radiation in the emission direction by a

Emission range of the second electrode through

emit. Likewise, the optoelectronic device can be set up, the part of the generated electromagnetic radiation in the emission direction by a

Emission area of the substrate to emit.

In one embodiment, the planarization isolates at least one of the two electrodes, i. the first

Electrode or the second electrode or both the first electrode and the second electrode, electrically opposite to the substrate.

Preferably, in addition to the planarization, the optoelectronic device comprises an insulating layer which comprises at least one of the two electrodes, i. the first

Electrode or the second electrode or both the first electrode and the second electrode, opposite to the

Substrate electrically isolated. Preferably, the first electrode, the second electrode, the functional layer structure, the planarization and the insulating layer are at least partially disposed on the main surface of the substrate.

According to a preferred embodiment, the electrode, which is electrically insulated from the substrate by the insulating layer, comprises a contact for contacting, wherein the insulating layer is arranged and arranged as a moisture diffusion barrier for

Moisture diffusion from the contact to the planarization to act. The contact is preferably for external

Contacting, i. for contacting from outside the optoelectronic device. The contact can pass through a suitable area for contacting one of the two

Be formed electrodes.

This allows the use of a planarization in which moisture easily spreads, at a

at the same time robust construction. For example, can itself

If necessary, easily spread moisture in an organic planarization.

Preferably, the first electrode, the second electrode, the functional layer structure, the planarization, the

Insulation layer and the contact at least partially disposed on the main surface of the substrate.

Preferably, as seen from the substrate, the

Isolation layer downstream of the planarization. Thereby, diffusion of constituents of the planarization into the functional layer structure can be prevented, i. the insulating layer can act as a diffusion barrier between planarization and functional layer structure. This may be desirable in particular when the

Planarization comprises an organic material or consists of an organic material and at the same time the functional layer structure comprises an organic material or consists of it, ie it is the functional

Layer structure is an organic functional layer structure. More preferably, the insulating layer and the substrate together completely surround the planarization. Thus, the planarization through the insulation layer in

Interaction with the substrate from all sides of

Moisture be encapsulated.

According to an alternative embodiment, as seen from the substrate, the planarization of

Subordinated insulation layer. It can the

Insulation layer extend over the entire substrate. These alternative embodiments facilitate the manufacture of the optoelectronic device,

For example, while the insulation layer can be applied by means of a roll to roll method before the planarization is applied and finely structured.

The planarization is preferably arranged such that at least a portion of the contact is not affected by the

Planarization is planarized. This facilitates the

Moisture diffusion barrier effect of

Insulation layer. Particularly preferred is the entire

Contact not planarized by the planarization.

Preferably, in a plan view of the main surface of the substrate, as viewed in a region of the contact or, better, over the entire contact, does not extend

Planarization. In other words, the contact and the planarization preferably do not completely or better not overlap in a plan view of the main surface of the substrate. By this preferred embodiment, a simple structure of the optoelectronic device with good moisture diffusion barrier effect of

Insulation layer allows. Preferably, viewed in plan view of the main surface of the substrate, the insulating layer extends in a region of the contact, and more preferably over the entire

Contact away. In other words, the insulating layer and the contact preferably overlap one another in a plan view of the main surface of the substrate, and more preferably they completely overlap. Thereby, a simple structure of the optoelectronic device with good

Moisture diffusion barrier effect of the insulating layer allows.

Preferably, the insulating layer is arranged and arranged to act as a moisture diffusion barrier in the lateral direction of the insulating layer. This allows a simple construction of the optoelectronic device with good moisture diffusion barrier effect of the insulating layer.

According to one embodiment, the insulating layer is arranged and arranged not to be in a direction perpendicular to the lateral direction of the insulating layer

Moisture diffusion barrier to act. Thereby, a simple structure of the optoelectronic device

allows. For example, the insulating layer can be produced in a particularly simple and cost-effective manner.

For example, the insulation layer may have holes, so

called Pinholes, which have the electrical

Do not significantly affect isolation effect, but allow moisture diffusion in a direction perpendicular to the lateral direction of the insulating layer direction.

Under a lateral direction of the insulating layer, for example, one at a boundary surface becomes planar

Insulation layer neglecting the

Surface roughness extending direction understood or e.g. a tangent to an interface of a curved one

Insulation layer neglecting a

Surface roughness. Accordingly, a plan view of the main surface of the substrate, for example, a vertical projection on the main surface of a planar substrate understood or, for example, a projection on the main surface of a curved planar substrate locally at each point -

Neglecting the surface roughness - perpendicular to the main surface. Moreover, the optoelectronic device preferably comprises an encapsulation layer for protecting the

functional layered structure from moisture, the one

Recess having the contact for contacting, e.g. for external contacting, accessible.

The encapsulation layer may be formed as a single layer, a layer stack or a layer structure. The encapsulation layer can be in particular a thin-layer encapsulation (also known as TFE, thin-film

encapsulation).

The encapsulation layer is preferably at least partially on a side of the second that is angled away from the substrate

Electrode arranged. This can be a good one

Encapsulation effect of the encapsulation layer can be achieved.

The insulating layer and the encapsulating layer are preferably disposed on opposite sides of the at least one electrode that is insulated from the insulating layer from the substrate. This can be a good one

Encapsulation effect of the encapsulation layer can be achieved.

Preferably overlap in plan view of the

Main surface of the substrate seen the planarization and the recess only partially or better not at all. In other words, preferably, in a plan view of the main surface of the substrate, as seen in a region of FIG

Recess does not planarize and particularly preferred extends in plan view of the main surface of the

Substrates seen across the entire recess not the planarization. Thereby, a simple structure of the optoelectronic device with good

Moisture diffusion barrier effect of the insulating layer allows.

Also preferably, as seen in plan view of the main surface of the substrate, the insulating layer and the recess overlap, more preferably, they completely overlap. In other words, in plan view of the

Main surface of the substrate seen extends the

Insulation layer preferably over part of the

Recess. Particularly preferably, it extends over the entire recess in a plan view of the main surface of the substrate. Thereby, a simple structure of the optoelectronic device with good

Moisture diffusion barrier effect of the insulating layer allows.

The insulating layer preferably has a layer thickness of at least 1 μm. Also, it may have a thickness which is at least equal to twice a

Roughness of the substrate is preferably at least twice the maximum roughness of the substrate.

As a result, sufficient stability, e.g. versus

By piercing the insulation layer can be achieved.

Preferably, the electrode standing by the

Insulation layer is electrically insulated from the substrate, in direct contact with the insulating layer. As a result, a mechanically particularly stable connection with the electrode can be produced, in particular when an insulating layer of inorganic material is used. Consequently, it is possible to attach the optoelectronic device 10 to the electrodes 14, 15. Preferably, the insulating layer comprises an inorganic material. This can be a particularly good

Moisture diffusion barrier effect can be achieved.

For example, the insulating layer may comprise an inorganic material selected from the following group of materials: oxide, nitride, oxynitride, carbide, metal oxide, metal nitride, metal oxynitride, metal carbide, ceramic, glass. In particular, the inorganic material may be silicon nitride (SiN), silicon oxide (SiO _x ), silicon oxynitride (SiNO _x ), silicon oxycarbonitride (SiCNO _x ), alumina

(ΑΙ Οχ), titanium oxide (TiO _x ), antimony tin oxide (ATO),

Silicon carbide (SiC).

Preferably, the insulating layer and the stand

Planarization in direct contact with each other, which is a simple structure of the optoelectronic device

allows.

The layer structure may be an organically functional layer structure. Preferably, the optoelectronic device is an organic light emitting diode.

According to one embodiment, a method for the

Providing the above-described optoelectronic device for generating an electromagnetic

Radiation, the steps:

Sl: providing the substrate,

S3: providing the planarization for compensating roughness of a main surface of the substrate facing the first electrode and the second electrode,

S4: providing a functional layer structure, a first electrode and a second electrode, wherein the first electrode is arranged on a side facing the substrate of the functional layer structure and the second electrode is arranged on a side facing away from the substrate of the functional layer structure, so that the functional Layer structure is set up, when energized the functional layer structure by means of the first electrode and the second electrode to generate the electromagnetic radiation,

wherein in step S3, the planarization in such a way

is configured and arranged that at step S4 at least one of the first and second electrodes a

Forming interface that has a lower roughness in at least a first area than in a second

Area .

Preferably, in step S3, a liquid

applied, which forms the planarization. In particular, the liquid may form a planarization consisting of a solid, for example by evaporation of a solvent.

Preferably, the method step S3 after the

Process step Sl executed. Preferably, the

Process step S3 before the process step S4 executed.

Preferably, the method further comprises the step S2 of providing the insulating layer, wherein in steps S2 and S4, the insulating layer and at least one of the electrodes are provided such that the

Insulation layer electrically insulated from this electrode to the substrate, wherein in step S4, the at least one electrode which is electrically insulated from the substrate by the insulating layer is provided as an electrode with a contact for contacting and wherein in step S2, the insulating layer is set up and arranged is to act as a moisture diffusion barrier for moisture diffusion from the contact to the planarization. Preferably, method steps S2 and S3 are carried out after method step S1. The method steps S2 and S3 are preferably carried out before the method step S4. Preferably, the method further comprises the step S5 of providing the encapsulation layer to protect the functional layer structure from moisture. This can be carried out, for example, according to method steps S1 to S4.

Below is the principle presented here below

Reference to drawings with reference to exemplary embodiments explained in more detail. The same reference numerals indicate the same elements in the figures. However, they are not

scale relationships, rather individual elements can be exaggerated for better understanding

be shown.

Show it:

FIGS. 1A, 1B and 1C: an optoelectronic device according to a first exemplary embodiment,

FIGS. 2A, 2B and 2C: an optoelectronic device according to a second exemplary embodiment,

FIGS. 3A and 3B: an optoelectronic device according to a third exemplary embodiment,

FIGS. 4A and 4B: an optoelectronic device according to a fourth exemplary embodiment, FIGS. 5A and 5B: an optoelectronic device according to a fifth exemplary embodiment,

FIGS. 6A and 6B: an optoelectronic device according to a sixth exemplary embodiment,

FIG. 7 shows a method for producing an optoelectronic

Device according to one of the embodiments, and Figures 8A and 8B: An optoelectronic device according to the prior art.

Figure 1A shows a sectional view of a

Optoelectronic device 10 according to a first

Embodiment. This comprises an electrically non-conductive substrate 11 with a rough surface, which forms an interface with further elements of the optoelectronic device 10, and here and hereinafter as

Main surface IIa is called. On this area, a planarization layer 12 is arranged from an organic material. The planarization layer 12 at least partially compensates for roughness of the substrate 11. At least

partially means that congruent irregularities on the side facing away from the substrate 11 of the

Planarisierungsschicht 12 may still be present, however, cause a lower roughness. The

Planarization 12 has accordingly on their facing away from the substrate 11 interface 12a less roughness than on the substrate 11 facing

Interface 12b. Above the planarization layer 12, a first electrode 14 consisting of a first electrode layer is arranged, followed by an organic one

functional layer structure 16 and a second

Electrode layer representing a second portion 151 of a second electrode 15. When energized by the two electrodes 14, 15, the organically functional layer structure 16 generates electromagnetic radiation and transmits it through the transparent second electrode layer

(second portion 151 of the second electrode 15)

Indium tin oxide through in an emission direction E from.

Instead of an indium tin oxide layer, any conductive transparent layer may be provided, for example another thin metal layer or a layer of Ag nanowires. The first electrode 14 is made of aluminum which can be directly contacted without possibly damaging it. The second electrode layer (second portion 151 of the second electrode 15) of indium tin oxide is with a further electrode member made of aluminum, which is a first portion 150 of the second electrode 15, electrically conductively connected, which can be contacted without possibly damaging, thereby the sensitive second electrode layer (second portion 151 of the second electrode 15) of indium tin oxide indirectly to contact .

In Figure IC, the detail B of Figure 1A is shown in enlargement. Since the planarization layer 12 only

in some areas exists and demensprechend only

In some areas, a planarization effect unfolds, the first electrode layer 14 has a lower roughness on the interface 14a facing away from the substrate 11 in the regions planarized thereby, than none

planarized regions 34b. The metallic one

Electrode layer 14, which in the present case consists of aluminum, is suitable for the side facing away from the substrate 11 on its side facing away from the substrate 11 interface 14a

electromagnetic radiation in both regions 34a and 34b both averaged over the visible spectral range and across the spectral range of the functional

Layer structure 16 generated electromagnetic radiation averaged over 90% reflective.

By means of the only partially provided

Planarisierungsschicht 12 generated both areas 34 a and 34 b, an information is displayed when viewing the optoelectronic device 10 against the

Emission direction E is visible in both an operating state and in an inoperative state.

Presently, for an external observer, as shown in FIG. 1B, when viewing the optoelectronic

Device 10 against the emission direction E in one

Radiation emission area 40, the shaded characters shown 41 "TXT" and one of two circles

existing hatched sign 42, also as Symbol or logo inscribed, visible. The line AA shows the position of the section of Figure 1A.

The planarization layer 12 is present in the entire hatched areas of the two circles of the symbol 42 and the letters "TXT" 41 seen in plan view of the substrate 11, but not outside of these areas Regions 34a facing away from the substrate

Interface 14a of the first electrode layer 14 is planarized and reflective for incident electromagnetic radiation in the visible spectral region and for the electromagnetic radiation generated by the functional layer structure 16 and the remaining portion 34b of the interface 14a is matte reflective for such radiation. These

different optical properties are due to the corresponding different reflection of electromagnetic radiation striking outside of the optoelectronic device 10 on the interface 14 a and the corresponding different reflection of the electromagnetic radiation generated by the optoelectronic device 10 both in an operating state and in a

Out of operation for a contrary to the emission direction E looking on the optoelectronic device 10th

Viewer visible.

Alternatively to the characters and symbols, by means of the partially applied planarization layer 12, a pattern, i. a consistent structure that is

uniformly repeated, are shown, e.g. parallel lines or a checkerboard pattern.

The illustrated in Figures 2A, 2B and 2C

Optoelectronic device 10 according to a second

Embodiment is compared to that of the first

Embodied similar. FIG. 2A accordingly shows a sectional illustration analogous to FIG. 1A, FIG. 2B shows a representation analogous to FIG. 1B of FIG Radiation emission area 40 visible characters 41, 42 and Figure 2C is an analogous to Figure IC magnification of the

Section B of Figure 2A. The only difference with the first embodiment is that the characters 41, 42 in the second

Embodiment be represented in that the planarization layer 12 as viewed in plan view of the substrate 11 in the entire area outside the two circles of the symbol 42 and the letters "TXT" 41 is present (hatched area in Figure 2B) and not present in the field of these characters Accordingly, for the external observer, the optoelectronic

Device 10 opposite to the radiation emission direction E, the hatched area of Figure 2B due to the there reflecting interface 14a of the first electrode 14 differently than the non-hatched area of the characters 41 and 42 due to the matte interface 14a of the first there

Electrode 14.

The illustrated in Figures 3A, 3B and 3C

Optoelectronic device 10 according to a third

Embodiment is compared to that of the first

Embodied similar. FIG. 3A shows a sectional view analogous to FIG. 1A, FIG. 3B shows a representation of the signals 41, 42 which are visible in the radiation emission region 40, and FIG. 3C shows an enlargement analogous to FIG

Section B of Figure 2A.

The difference from the first embodiment is that the generated electromagnetic radiation in the optoelectronic device 10 according to the third

Embodiment through the first electrode 14, the

Planarisierungsschicht 12 and the substrate 11 in one

Emission direction E is emitted. The transparent first electrode 14 may be made of, for example, indium tin oxide, and the substrate 11 may be a plastic film act. Over the substrate 11 and the planarization 12, a thin-layer encapsulation may be arranged (not

shown), on which in turn the first electrode 14 is arranged.

As seen in Figure 3C, the unfolds

Planarisierungsschicht 12 only partially a

Planarisierungswirkung, so that the second electrode layer 15 on a substrate 11 facing interface 15b in the thereby planarized areas 35a a smaller

Roughness on as non-planarized areas 35b. The metallic electrode layer 15, the present from

Aluminum is for is on the substrate 11th

facing interface 14a averaging electromagnetic radiation in both areas 35a and 35b both over the visible spectral range averaged as well as over the

Spectral range of the electromagnetic radiation generated by the functional layer structure 16 averaged over 90% reflective.

Analogous to the first exemplary embodiment, information which is visible when viewing the optoelectronic device 10 against the emission direction E both in an operating state and in an inoperative state is represented by the two regions 35a and 35b generated by the only partially provided planarization layer 12.

The opto-electronic device 10 according to a fourth embodiment shown in FIGS. 4A and 4B is similarly constructed in comparison with that of the first embodiment. FIG. 4A shows an analog to FIG. 1A

Sectional view and Figure 4B is an analogous to Figure IC magnification of the section B of Figure 4A.

The only difference with the first embodiment is that in the fourth embodiment, the substrate 11 is electrically conductive. For example, it can made of aluminum or silver. Accordingly, directly above the substrate 11 is an inorganic

Insulation layer 13 is arranged, which extends over the entire main surface IIa of the substrate 11 away and thus the substrate 11 opposite to the two

Electrodes 14 and 15 are electrically isolated. The

Insulation layer 13 consists of an inorganic

Material and has only a very small one

Planarization effect. The insulating layer 13 is made of or includes a non-conductive material

Material. Under a non-conductive material is a

Material having an electrical conductivity of less than 10 ^"8 Ω ^-1 -m understood ^_1. Since the insulation layer 13 extends over the entire substrate 11 across the substrate 11 may nevertheless of an electrically conductive material

exist without causing a short circuit between the two electrodes 14, 15. In general, it is sufficient to avoid such a short circuit when the

Insulation layer 13 is arranged such that they

at least one of the electrodes 14, 15 electrically insulated from the substrate 11.

The electrodes 14, 15 are in direct contact with the inorganic insulating layer 13, whereby a mechanically particularly stable connection with the electrodes 14, 15 is generated. Consequently, there is a possibility that

optoelectronic device 10 to be attached to the electrodes 14, 15, e.g. to be soldered or glued to the electrodes 14, 15 or to contact temporarily with pins for measurements.

Roughness of the substrate is preferably at least twice the maximum roughness of the substrate. The opto-electronic device 10 according to a fifth embodiment shown in FIGS. 5A and 5B is similarly constructed in comparison with that of the fourth embodiment. FIG. 5A shows an analog to FIG. 4A

Sectional view and Figure 5B is an analogous to Figure 4B enlargement of the section B of Figure 5A.

The only difference with the fourth embodiment is that in the fifth embodiment, the partial planarization layer 12 is disposed directly on the substrate 11 and the insulating layer 13 extends over it. This can cause a diffusion of

Components of the organic planarization layer 12 are prevented in the organic functional layer structure 16.

At this time, the insulating layer 13 and the substrate 11 completely enclose the planarizing layer 12, so that the planarizing layer 12 is sealed from all sides by moisture by the insulating layer 13 in cooperation with the substrate 11.

In contrast, the planarization layer 12 disposed downstream of the insulating layer 13 enables the planarization layer 12 to be in the

Optoelectronic device 10 according to the fourth

Embodiment a simple preparation of extending over the entire substrate across insulating layer, for example by means of a roll-to-roll method. The optoelectronic device 10 according to a sixth embodiment shown in FIGS. 6A and 6B is similarly constructed in comparison with that of the fifth embodiment. FIG. 6B shows a top view and FIG. 6A shows a sectional view similar to FIG. 5A along the line A-A of FIG. 6A.

In contrast to the fifth exemplary embodiment, in the sixth exemplary embodiment, an encapsulation layer is also provided 17 for protection against moisture. This points

Recesses, so that corresponding contacts 24, 25 of the two electrodes 14, 15 are accessible. In this case, as seen in plan view of the main surface 11a of the substrate 11, the organic planarization layer 12 does not extend in the region of these recesses, but only the insulating layer 13. As a result of this arrangement, virtually no moisture can pass through the recesses and the holes

Electrodes 14, 15 through the organic

Planarisierungsschicht 12, in which moisture easily spread, get to the functional layer structure 16. The insulating layer 13 acts as a moisture diffusion barrier in a direction R extending in an interface of the insulating layer 13. However, the planarization layer 12 extends in plan view of the

Main surface IIa of the substrate 11 seen in the same manner as in the first, fourth and fifth

Embodiment in a range of functional

Layer structure 16, thereby the characters 41 and 42 are represented.

Alternatively to the planarization layer 12

Subordinate insulation layer 13 may be the

Planarisierungsschicht 12 also be the insulating layer 13 downstream (analogous to the fourth embodiment).

The optoelectronic devices 10 according to the fourth, fifth and sixth exemplary embodiments emit the electromagnetic radiation at least partially through the second electrode 15. Alternatively, corresponding opto-electronic devices 10 may be provided which, analogous to the third embodiment, emit the generated electromagnetic radiation at least partially through the substrate 11, e.g. With

transparent planarization layer 12 and transparent insulation layer 13. In the embodiments described above, the planarization layer 12 may be disposed on a substrate 11

remote interface 12a have a roughness less than or equal to 50 nm.

In the embodiments described above, the planarization layer 12 is made of a different material than the insulating layer 13. In the embodiments described above, the insulating layer 13 (if present) consists of a

non-conductive material or includes such material.

In the embodiments described above, the encapsulant layer 17 (if present) may be in the form of a single layer or as a layer stack or as one

Layer structure be formed. It may comprise or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide,

Silicon oxide, silicon nitride, silicon oxynitride,

Indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof or tetrafluoroethylene (TFE). The encapsulation layer 17 can be, in particular, a thin-layer encapsulation (also known as TFE, thin-film

encapsulation). This can e.g. consist of several by means of atomic layer deposition (also referred to as atomic layer deposition or ALD) or Moleklegenagenabscheidung (also referred to as molecular layer deposition or MLD) generated individual layers. The

Thin-layer encapsulation or its individual layers may or may also be effected by means of ink jet printing or plasma enhanced chemical vapor deposition (PECVD) or by means of the so-called

be generated called "Vacuum Polymer Technology".

In the embodiments described above, the planarization layer 12 (if present) may be an organic material selected from the following group of materials include: epoxy resin, acrylate, polyurethane, polyimide,

Silicone, organopolysilazane, polysiloxane, styrene, polyester, polyectone. It may be printed, for example by means of a method selected from the following group of

Printing process: screen printing, inkjet printing also called inkjet printing, gravure printing or flexographic printing. It may also be coated, e.g. by means of die coating, also called slot-die-coating, or by spray coating, also called spray-coating, both if necessary. In combination with subsequent back-structuring. It can be applied in liquid form, e.g. printed or coated, and then cured, e.g. by means of thermal

Curing or by means of UV curing. In the above-described embodiments, the insulating layer 13 may be an inorganic material that

is selected from the following group of materials,

include: oxide, nitride, oxynitride, carbide, metal oxide,

Metal nitride, metal oxynitride, metal carbide, ceramics, glass. In particular, the inorganic material may be silicon nitride (SiN), silicon oxide (SiO _x ), silicon oxynitride (SiNO _x ), silicon oxycarbonitride (SiCNO _x ), alumina

(ΑΙ Οχ), titanium oxide (TiO _x ), antimony tin oxide (ATO) or

Silicon carbide (SiC) act. This inorganic

Insulating layer 13 can be produced by cathode sputtering, also called sputtering, chemical vapor deposition, also called chemical vapor deposition, or atomic layer deposition, also called atomic layer deposition. The insulating layer 13 may be a ceramic

Act coating. The insulating layer 13 may also be an anodized layer, preferably on a substrate 11 containing or consisting of aluminum. Likewise, it can be a coating of glass or a coating that contains glass, or a glassy one

Act coating.

FIG. 7 shows a method for generating a

Optoelectronic device according to one of Embodiments. The method comprises the steps of providing S1 of the substrate, providing S3 of the planarization layer, providing S4 of the functional layer structure, the first electrode and the second

Electrode. In step S3, a liquid

applied, which forms the planarization, which consists of a solid by evaporation of a solvent. The method may further comprise the step S2 of providing the insulating layer. Moreover, the method may include step S5 of providing the encapsulation layer. The method steps are described in the following

Sequence executed Sl, S2 (optional), S3, S4, S5

(optional). Alternatively, the following order is possible: Sl, S3, S2 (optional), S4, S5 (optional).

FIG. 8A shows a plan view of an optoelectronic device 10 * according to the prior art. Figure 8B is a sectional view taken along line A of Figure 8A.

The optoelectronic device 10 * comprises an electrically conductive substrate 11 (not visible in FIG. 8A) with a rough surface which forms an interface with further elements of the optoelectronic device 10 *. On this is a planarization layer 12 of a

arranged organic material having on their side facing away from the substrate 11 has a lower roughness than on the substrate 11 side facing. On the side facing away from the substrate 11 of the planarization layer 12, in turn, a first electrode 14 and a second electrode 15 are arranged.

Between the electrodes 14, 15, an organically functional layer structure 16 is arranged, which generates electromagnetic radiation when energized by means of the two electrodes 14, 15. This is emitted at least partially by the optoelectronic device 10 through the second electrode 15, but not through the substrate 11. On the aforementioned layers is a

Encapsulation layer 17 for protection against moisture

arranged. This has recesses, so that

corresponding contacts 24, 25 of the two electrodes 14, 15 are accessible. The second electrode 15 has a first portion 150 of aluminum with the contact 25 and a second translucent portion 151 of indium tin oxide. As shown in FIG. 8B, moisture may diffuse along moisture-diffusion paths 30 via these recesses through electrodes 14 and 15 into the organic planarization layer 12. Since the organic planarization layer 12 has a high lateral

Moisture transport capability, the

Moisture in the lateral direction via the organic

Planarisierungsschicht to the first electrode 14 out

spread and diffuse through the first electrode 14 into the organic functional layer structure 16 and damage them.

Reference sign list:

10 Optoelectronic device

10 * Optoelectronic device according to the prior art

technology

11 substrate

IIa Main surface of the substrate

12 planarization layer

12a surface facing away from the substrate

Planarization layer

12b Boundary surface facing the substrate

PIanarisierungsSchicht

13 insulation layer

14 First electrode

14a Interface of the first electrode facing away from the substrate

15 Second electrode

15b The substrate-facing interface of the second

electrode

150 First section of the second electrode

151 second section of the second electrode

16 Functional layer structure

17 encapsulation layer

24 contact first electrode

25 contact second electrode

30 moisture diffusion path

34a First region of the first electrode

34b Second region of the first electrode

35a First region of the second electrode

35b Second region of the second electrode

40 emission range

41 characters

42 characters

A line

B section

R direction, which runs in the main surface of the substrate

E emission direction

Claims

Claims 1. Optoelectronic device (10) for generating

electromagnetic radiation comprising:

a substrate (11),

a functional layer structure (16), one on the substrate (11) facing side of the functional

Layer structure (16) arranged first electrode (14) and arranged on a side facing away from the substrate (11) side of the functional layer structure (16) second

Electrode (15), wherein the functional layer structure (16) is arranged, when energized the functional

Layer structure (16) by means of the first electrode (14) and the second electrode (15) to generate the electromagnetic radiation, and

a planarization (12) for compensating a roughness of one of the first electrode (14) and the second electrode (15) facing the main surface (IIa) of the substrate (11),

wherein the planarization (12) is configured and arranged such that at least one of the first and second electrodes (14, 15) has an interface (14a, 15b) which has less roughness in at least a first region (34a, 35a) than in a second area (34b, 35b).

The optoelectronic device (10) of claim 1 wherein the interface (14a, 15b) of the electrode (14, 15) is planarized throughout the first region (34a) by the planarization (12) and throughout the second region

(34b) is not planarized by the planarization (12).

3. Opto-electronic device (10) according to one of the preceding claims, wherein a roughness of a

Substrate (11) facing away from the interface (12a) of

Planarization (12) is less than or equal to 500 nm.

4. Optoelectronic device (10) according to any one of the preceding claims, wherein a roughness of the main surface (IIa) of the substrate (11) is greater than or equal to 500 nm.

5. Optoelectronic device (10) according to one of the preceding claims, wherein an interface (12a) of the planarization (12) facing away from the substrate (11) has a roughness which is less by a factor of 5 than an interface (12b) facing the substrate (11). planarization (12).

The optoelectronic device (10) according to one of the preceding claims, wherein the boundary surface (14a, 15b) of the electrode (14, 15) in the first region (34a, 35a) or in the second region (34b, 35b) or both in the first

Region (34 a, 35 a) and in the second region (34 b, 35 b), a reflectivity of at least 50% for one on the

Interface (14a, 15b) has detected electromagnetic radiation.

7. Optoelectronic device (10) according to one of the preceding claims, wherein the optoelectronic

Device (10) is arranged, in an operating state and in an inoperative state by interaction of the first region (34a) and the second region (34b) represent a visible information.

The opto-electronic device (10) of any one of the preceding claims, wherein the planarization (12) comprises an organic material.

9. Optoelectronic device (10) according to claim 8, wherein the planarization (12) comprises an organic material selected from the following group of materials: epoxy resin, acrylate, polyurethane, polyimide, silicone,

Organopolysilazane, polysiloxane, styrene, polyester, polyectone.

10. Optoelectronic device (10) according to one of the preceding claims, wherein the optoelectronic

Device (10) is arranged, at least part of the generated electromagnetic radiation in one

Emission direction (E) to emit, wherein both the first region (34a, 35a) and the second region (34b, 35b) when viewing the optoelectronic device (10) against the emission direction (E) are visible.

An optoelectronic device (10) according to any one of the preceding claims, comprising an insulating layer (13) electrically insulating at least one of the first and second electrodes (14, 15) from the substrate (11).

12. An optoelectronic device according to claim 11, wherein the electrode passing through the insulating layer (13)

is electrically insulated from the substrate (11), has a contact (24, 25) for contacting and the

Insulation layer (13) is arranged and arranged to act as a moisture diffusion barrier for moisture diffusion from the contact (24, 25) to the planarization (12).

13. Method for producing an optoelectronic

Apparatus (10) for generating electromagnetic radiation, comprising:

Providing (Sl) a substrate (11),

Providing (S3) a planarization (12) for

Compensating a roughness of one of the first electrode (14) and the second electrode (15) facing the main surface (IIa) of the substrate (11),

Providing (S4) a functional layer structure (16), a first electrode (14) and a second electrode (15), wherein the first electrode (14) is arranged on a side of the functional layer structure (16) facing the substrate (11) and the second electrode on a

Substrate (11) facing away from the functional

Layer structure (16) is arranged so that the functional Layer structure (16) is set, when energized the functional layer structure (16) by means of the first

Electrode (14) and the second electrode (15) the

to generate electromagnetic radiation,

wherein, when providing (S3) the planarization (12), it is configured and arranged such that when providing (S4) the first and second electrodes (14, 15) at least one of the first and second electrodes (14, 15) has an interface ( 14a, 15b) which has a lower roughness in at least one first region (34a, 35a) than in a second region (34b, 35b).

A method according to claim 13, wherein in the step (S3) of providing the planarization (12) a liquid is applied which forms the planarization (12).

15. The method according to claim 13 or 14, wherein a

Opto-electronic device (10) according to one of claims 2 to 12 is generated.