WO2018028593A1 - Display device - Google Patents

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Publication number
WO2018028593A1
WO2018028593A1 PCT/CN2017/096604 CN2017096604W WO2018028593A1 WO 2018028593 A1 WO2018028593 A1 WO 2018028593A1 CN 2017096604 W CN2017096604 W CN 2017096604W WO 2018028593 A1 WO2018028593 A1 WO 2018028593A1
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WO
WIPO (PCT)
Prior art keywords
light
display device
matrix
phosphor
led
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PCT/CN2017/096604
Other languages
French (fr)
Chinese (zh)
Inventor
叶寅夫
吴维庭
潘科豪
陈宗源
林宏诚
钟权任
周嘉峰
周圣伟
蓝逸生
Original Assignee
亿光电子工业股份有限公司
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Application filed by 亿光电子工业股份有限公司 filed Critical 亿光电子工业股份有限公司
Priority to CN201780042680.5A priority Critical patent/CN109478547A/en
Publication of WO2018028593A1 publication Critical patent/WO2018028593A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00

Definitions

  • the present invention relates to a display device, and more particularly to a display device using the light emitting diode technology.
  • LEDs Light-emitting diodes
  • LEDs have been developed for decades.
  • LEDs such as indicator lights, illumination sources, and outdoor large-scale display panels
  • LEDs have evolved toward the application of displays for electronic devices. That is, the miniaturized LED chips are arranged in an array, and one or several LED chips are used as a pixel unit, thereby forming a display.
  • Such a display may be referred to as a micro LED display or a micro LED array.
  • micro LED displays faces several technical problems. For example, how to transfer and arrange a large number of miniaturized LED chips that have been manufactured to a device substrate (ie, the problem of massive transfer); how to miniaturize LED chips Forming a miniaturized phosphor to produce a specific color; how to electrically connect the electrodes of the LED chip to the pads of the substrate. Therefore, several operators have invested in research and improvement on these technical issues in order to increase the commerciality of micro LED displays.
  • an embodiment of the present invention provides an LED array comprising a plurality of LED pixels, each of the LED pixels including a first polarity semiconductor layer, a second polarity semiconductor, and a quantum well illumination.
  • the quantum well light emitting structure layer is disposed between the first and second polarity semiconductor layers, wherein the LED pixels are separated by a first etching trench along a column direction, and along In a row direction, the first polar semiconductor layers of the LED pixels are separated by a second etched trench, and the second polar semiconductor layers are connected; an insulating layer covering the first etched trench and The second etched trenches expose the upper surfaces of the first polar semiconductor layers; a plurality of metal conductive layers extending along the row direction, and electrically connecting the LED pixels respectively a second polarity semiconductor; a plurality of conductor lines extending along the column direction and electrically connecting the first polarity semiconductors of the LED pixels respectively; and a phosphor moment , Disposed on the light emitting diode
  • a display device including: a pedestal having a first direction and a second direction that are perpendicular to each other; and a plurality of LED strips carried by the pedestal.
  • Each of the light emitting diodes includes an epitaxial substrate and a semiconductor epitaxial layer, a first metal electrode and a second metal electrode.
  • the semiconductor epitaxial layer is disposed on the epitaxial substrate.
  • the first and the second metal electrodes are electrically connected to the semiconductor An epitaxial layer, wherein the light emitting diode strips are arranged in parallel along the second direction, and the first polar semiconductor layers of the light emitting diodes are arranged in parallel along the first direction; a plurality of traces arranged in parallel along the first direction and electrically connected to the first metal electrodes of the light emitting diodes; and a plurality of second traces arranged in parallel along the second direction, and The second metal electrodes electrically connected to the light emitting diodes
  • the present invention provides a micro-matrix display device and a method of fabricating the same, which may include:
  • a micro-matrix display device comprising: a light-emitting diode matrix having an upper surface and a lower surface, the light-emitting diode matrix comprising a plurality of light-emitting diodes; each of the light-emitting diodes comprising a P-pole semiconductor and an N-pole semiconductor And a quantum well light emitting structure between the P pole semiconductor and the N pole semiconductor, and a non-conductive carrier substrate, and a metal conduction layer between the N-pole semiconductor and the non-conductive carrier substrate; An etch trench and a plurality of second etch trenches, wherein the first etch trench removes the P-pole semiconductor, and the quantum well light-emitting structure, and the N-pole semiconductor, and the metal conductive layer, and are exposed The non-conductive carrier substrate, wherein the second etch trench removes the P-pole semiconductor, and the quantum well light-emitting structure, and a portion of the N-pole semiconductor, and exposes the N-pole semiconductor; an insulating layer covers the first
  • a chip matrix forms a micro-matrix display device.
  • micro-matrix display device of embodiment 1, wherein the wavelength emitted by the quantum well light-emitting structure comprises blue light or ultraviolet light (including UVA, UVB, UVC).
  • micro-matrix display device according to embodiment 1, wherein the conductor lines connect the columns of P-pole semiconductors in parallel with each other.
  • micro-matrix display device wherein the matrix of the light-emitting diodes is controlled by means of column scanning, so that the individual LEDs can have respective driving currents and light-emitting times, thereby adjusting the light-emitting intensity.
  • the non-conductive carrier substrate according to the first embodiment such as an alumina substrate, a ceramic substrate, or a high-resistance silicon substrate.
  • the micro-matrix display device wherein the insulating layer comprises silicon oxide (SiO X), silicon nitride (SiN X), polyimide (Polyimide), or other polymer materials.
  • a micro-matrix display device comprising: a light-emitting diode matrix having an upper surface and a lower surface, the light-emitting diode matrix comprising a plurality of light-emitting diodes; each of the light-emitting diodes comprising a P-pole semiconductor and an N-pole semiconductor And a quantum well light emitting structure between the P pole semiconductor and the N pole semiconductor, and a non-conductive carrier substrate; a plurality of third etching trenches and a plurality of fourth etching trenches, wherein the third etching trench Removing the P-pole semiconductor, and the quantum well light-emitting structure, and the N-pole semiconductor, and exposing the non-conductive carrier substrate, wherein the fourth etching trench removes the P-pole semiconductor, and the quantum well emitting structure, And a portion of the N-pole semiconductor, and exposing the N-pole semiconductor; a plurality of second conductor lines disposed on the N-pole semiconductor; an insulating layer covering the third
  • a chip matrix forms a micro-matrix display device.
  • micro-matrix display device of embodiment 12, wherein the wavelength emitted by the quantum well emitting structure comprises blue light or ultraviolet light (including UVA, UVB, UVC).
  • micro-matrix display device of embodiment 12 wherein the conductor lines connect the columns of P-pole semiconductors in parallel with each other.
  • micro-matrix display device wherein the matrix of the light-emitting diodes is controlled by column scanning so that the individual LEDs can have respective driving currents and light-emitting times, thereby adjusting the light-emitting intensity.
  • non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
  • the insulating layer comprises silicon oxide (SiO X), silicon nitride (SiN X), polyimide (Polyimide), or other polymer materials.
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels, each of the light-emitting diode pixels comprising: a first polarity semiconductor and a second polarity semiconductor; and a quantum well light emitting structure Between the first polarity semiconductor and the second polarity semiconductor; a plurality of metal conduction layers, each of the metal conduction layers The first polarity semiconductors of the LEDs are connected to each of the LEDs; and the plurality of conductor lines are disposed perpendicular to the metal conduction layers, and the conductor lines are electrically connected to each of the column positions.
  • the slice matrix forms a full color matrix display device.
  • micro-matrix display device of embodiment 22, wherein the wavelength emitted by the quantum well illumination structure comprises blue light or ultraviolet light (including UVA, UVB, UVC).
  • micro-matrix display device wherein the light-emitting diode matrix is controlled by column scanning of the conductor lines, so that each of the LED pixels can have respective driving currents and light-emitting times, thereby adjusting the light emission. strength.
  • micro-matrix display device of embodiment 22 further comprising a non-conductive carrier substrate for carrying the matrix of the light-emitting diodes.
  • micro-matrix display device wherein the non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
  • micro-matrix display device of embodiment 22 further comprising an insulating layer disposed between the LED pixels.
  • the insulating layer comprises silicon oxide (SiO X), silicon nitride (SiN X), polyimide (Polyimide), or other polymer materials.
  • the slice matrix forms a full color matrix display device.
  • a fluorescent patch matrix forms a full color matrix display device.
  • the slice matrix forms a full color matrix display device.
  • the conductors are an N-pole semiconductor and a P-pole semiconductor, respectively.
  • the micro-matrix display device wherein the first polarity semiconductor and the second polarity semiconductor are a P-pole semiconductor and an N-pole semiconductor, respectively.
  • micro-matrix display device of embodiment 22 wherein the light-emitting diode pixels are vertical LED structures.
  • micro-matrix display device of embodiment 22 further comprising a shielding layer disposed between the LED pixels.
  • micro-matrix display device of embodiment 22 further comprising a shielding layer disposed between the fluorescent patch pixels.
  • the micro-matrix display device wherein the transparent material may be Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Zinc Oxide (Zinc Oxide, ZnO) or aluminum oxide zinc (Aluminium Zinc Oxide, AZO).
  • ITO Indium Tin Oxide
  • IZO Indium Zinc Oxide
  • ZnO Zinc Oxide
  • Al oxide zinc Al oxide zinc
  • micro-matrix display device of embodiment 22 wherein the conductive lines are disposed between the light-emitting diode pixels.
  • micro-matrix display device of embodiment 22 wherein the conductive lines are disposed on the light-emitting diode pixels.
  • micro-matrix display device of embodiment 22 further comprising a scan control circuit electrically connected to the conductive lines.
  • micro-matrix display device of embodiment 22 further comprising a data control circuit electrically connected to the metal conduction layers.
  • micro-matrix display device of embodiment 22 further comprising a lens matrix having a plurality of lens pixels, each of the lens pixels corresponding to a fluorescent patch pixel.
  • micro-matrix display device of embodiment 22 further comprising a lens matrix, wherein the fluorescent patch matrix is disposed between the lens matrix and the light-emitting diode matrix.
  • a method of fabricating a micro-matrix display device comprising: providing a matrix of light-emitting diodes, the matrix of light-emitting diodes comprising a plurality of light-emitting diode pixels, each of the light-emitting diode pixels comprising: a first polarity semiconductor and a first a bipolar semiconductor; a quantum well light emitting structure disposed between the first polar semiconductor and the second polar semiconductor; a plurality of metal conducting layers, each of the metal conducting layers electrically connected to each row The first polarity semiconductors of the LEDs and the plurality of conductor lines are disposed perpendicular to the metal conduction layers, and each of the conductor lines is electrically connected to the second of the LEDs at each column position And a fluorescent chip matrix, wherein the fluorescent patch matrix comprises a plurality of fluorescent patch pixels, each of the fluorescent patch pixels corresponding to a light emitting diode pixel.
  • the wavelength emitted by the quantum well light-emitting structure comprises blue light or ultraviolet light (including UVA, UVB, UVC).
  • the non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
  • the method of manufacturing a micro-matrix display device wherein the light-emitting diode matrix further comprises an insulating layer disposed between the light-emitting diode pixels.
  • the insulating layer comprises silicon oxide (SiO X ), silicon nitride (SiN X ), polyimide (Polyimide), or other polymer. material.
  • the fluorescent patch matrix comprises a plurality of red, green, blue, and yellow fluorescent patches, and the light source emitted by the light emitting diode matrix And exciting the fluorescent patch matrix to form a full color matrix display device.
  • the method of manufacturing a micro-matrix display device according to claim 53 wherein the first polar semiconductor and the second polar semiconductor are an N-pole semiconductor and a P-pole semiconductor, respectively.
  • the method of manufacturing the micro-matrix display device of the embodiment of the present invention wherein the LED matrix further comprises a shielding layer disposed between the LED pixels.
  • the method of manufacturing the micro-matrix display device of the embodiment 53 further comprising the shielding chip matrix further comprising a shielding layer disposed between the fluorescent patch pixels.
  • the transparent material may be Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or Zinc Oxide ( Zinc Oxide, ZnO) or Aluminum Zinc Oxide (AZO).
  • ITO Indium Tin Oxide
  • IZO Indium Zinc Oxide
  • AZO Aluminum Zinc Oxide
  • the present invention provides a micro-matrix display device and a method of fabricating the same, which may include:
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode a pixel; wherein the phosphor matrix comprises a first phosphor comprising a red dye, or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment;
  • a full color matrix display device is formed by the light source emitted by the matrix of the light emitting diodes and exciting the matrix of the phosphor.
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode pixel And wherein the phosphor matrix comprises a second phosphor comprising a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; And a light source emitted by the matrix of the light emitting diodes and exciting the matrix of the phosphor to form a full color matrix display device.
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode a pixel; wherein the phosphor matrix comprises a first phosphor and a second phosphor; wherein the first phosphor comprises a red dye, or a red pigment, or a red organic dye, or a red organic pigment, or a red An inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; emitted by the light emitting diode matrix
  • the light source and the matrix of the phosphor are excited to form a full color matrix display device.
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode a pixel; wherein the phosphor matrix comprises a first phosphor, a second phosphor, and a third phosphor; wherein the first phosphor comprises a red dye, or a red pigment, or a red organic dye, Or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; Wherein the third phosphor comprises a yellow dye, or a yellow pigment, or a yellow organic dye, or a yellow organic pigment, or a yellow inorgan
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode pixel
  • the phosphor matrix includes a first phosphor, a second phosphor; wherein the first phosphor comprises a red dye, or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; and a light transmissive matrix comprising a plurality of transparent
  • the light portion, each of the light transmitting portions corresponds to a light emitting diode pixel; and the light source emitted by
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is disposed above a substrate and combined with the LED array to form a full-color matrix display device.
  • the substrate comprises a glass substrate, a plastic substrate, a flexible substrate, and a sapphire substrate.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is formed by developing a phosphor having a photoresist function by multiple exposure.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is formed by etching the phosphor a plurality of times.
  • micro-matrix display device according to any one of claims 1 to 5, wherein the phosphor matrix is laser-cut and then combined with the LED array to form a full-color matrix display device.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is sprayed on the light-emitting diode matrix by spraying a phosphor having a photoresist function. Sub-exposure development forms the full color matrix display device.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is formed by spraying a phosphor over the matrix of the LED, and forming the full-color matrix by etching a plurality of times. Display device.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the wavelength of the light-emitting diode matrix comprises blue light or ultraviolet light (including UVA, UVB, UVC).
  • micro-matrix display device according to any one of Embodiments 1 to 5, further comprising a column scanning method of the multi-conductor line to control the LED matrix, so that each LED pixel can have a respective driving current and a lighting time. , you can adjust the luminous intensity.
  • micro-matrix display device of any one of embodiments 1 to 5, further comprising a non-conductive carrier substrate for carrying the matrix of the light-emitting diodes.
  • non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
  • micro-matrix display device according to any one of the first to fifth aspects, further comprising an insulating layer disposed between the light-emitting diode pixels.
  • the insulating layer comprises silicon oxide (SiO x ), silicon nitride (SiN X ), polyimide (Polyimide), or other polymer. material.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the light-emitting diode pixels comprise a nitride.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the light-emitting diode pixels are vertical LED structures.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the light-emitting diode pixels are horizontal LED structures.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the light-emitting diode pixels are of a flip-chip type light-emitting diode structure.
  • micro-matrix display device according to any one of the first to fifth aspects, further comprising a shielding layer disposed between the LED pixels.
  • micro-matrix display device according to any one of embodiments 1 to 5, further comprising a shielding layer disposed between the phosphor pixels.
  • micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor pixels comprise phosphor powder.
  • micromatrix display device according to any one of the first to fifth aspects, further comprising a multi-transparent conduction line.
  • the micro-matrix display device wherein the poly transparent conductive line material is Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and oxidation. Zinc Oxide (ZnO) or Aluminum Zinc Oxide (AZO).
  • ITO Indium Tin Oxide
  • IZO Indium Zinc Oxide
  • ZnO Zinc Oxide
  • AZO Aluminum Zinc Oxide
  • micro-matrix display device of embodiment 27 further comprising a scan control circuit electrically connected to the multi-transparent conduction line.
  • micro-matrix display device of embodiment 27 further comprising a data control circuit electrically connected to the multi-transparent conduction line.
  • micro-matrix display device according to any one of embodiments 1 to 5, further comprising a lens matrix having a plurality of lens pixels, each of the lens pixels corresponding to a phosphor pixel.
  • micro-matrix display device of any one of embodiments 1 to 5, further comprising a lens matrix, wherein the phosphor matrix is disposed between the lens matrix and the light-emitting diode matrix.
  • a method of fabricating a micro-matrix display device comprising: providing a matrix of light-emitting diodes, the matrix of light-emitting diodes comprising a plurality of light-emitting diode pixels; and providing a matrix of phosphors disposed relative to the matrix of the light-emitting diodes
  • the light body matrix includes a plurality of phosphor pixels, each of which corresponds to a light emitting diode pixel.
  • the phosphor matrix comprises a first phosphor comprising a red dye, or a red pigment, or a red organic dye Or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; a light source emitted from the matrix of the light emitting diodes and exciting the matrix of the phosphor to form a full color matrix display device.
  • the phosphor matrix comprises a second phosphor comprising a green dye, or a green pigment, or a green organic dye. Or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; a light source emitted from the matrix of the light emitting diode and exciting the matrix of the phosphor to form a full color matrix display device.
  • the phosphor matrix comprises a first phosphor and a second phosphor; wherein the first phosphor comprises a red dye, Or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or A green inorganic dye or a green inorganic pigment; a light source emitted from the matrix of the light emitting diodes and exciting the matrix of the phosphor to form a full color matrix display device.
  • the phosphor matrix comprises a first phosphor, a second phosphor, and a third phosphor; wherein the first The phosphor includes a red dye, or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor includes a green dye, or a green pigment, or a green organic dye Or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; wherein the third phosphor comprises a yellow dye, or a yellow pigment, or a yellow organic dye, or a yellow organic pigment, or a yellow inorganic dye, or a yellow inorganic pigment Or a yellow fluorescent powder, or a blue dye, or a blue pigment, or a blue organic dye, or a blue organic pigment, or a blue inorganic dye, or a blue inorganic pigment; a light
  • the phosphor matrix comprises a first phosphor and a second phosphor; wherein the first phosphor comprises a red dye, Or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye or a green inorganic pigment; a light transmissive portion matrix comprising a plurality of light transmitting portions, each light transmitting portion corresponding to a light emitting diode pixel; and a light source emitted through the light emitting diode matrix and exciting the phosphor
  • the matrix forms a full color matrix display device.
  • wavelength of the light-emitting diode matrix comprises blue light or ultraviolet light (including UVA, UVB, UVC).
  • the non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
  • the insulating layer comprises silicon oxide (SiO X ), silicon nitride (SiN X ), polyimide (Polyimide), or other polymer. material.
  • the poly transparent conductive line material is Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO) ), zinc oxide (Zinc Oxide, ZnO) or aluminum zinc oxide (Aluminum Zinc Oxide, AZO).
  • ITO Indium Tin Oxide
  • IZO Indium Zinc Oxide
  • ZnO zinc oxide
  • Al zinc oxide Al zinc oxide
  • micro-matrix display device according to embodiment 64, further comprising a data control circuit electrically connected to the multi-transparent conduction line.
  • the method of manufacturing the micro-matrix display device of the embodiment 37 further comprising a lens matrix, wherein the phosphor matrix is disposed between the lens matrix and the light-emitting diode matrix.
  • each of the LED pixels comprises: a first polarity semiconductor and a second polarity semiconductor; and a quantum well light emitting structure disposed on the first Between the polar semiconductor and the second polarity semiconductor; a plurality of metal conduction layers, each of the metal conduction layers electrically connected to the first polarity semiconductors of the light emitting diodes at each row position; and a plurality of Conductor lines are vertically disposed opposite to the metal conduction layers The conductor lines are electrically connected to the second polar semiconductors of the LEDs at each column position.
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of blue light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting a diode pixel; wherein the phosphor pixels include at least one first non-fluorescent powder and at least one second non-fluorescent powder; wherein the first non-fluorescent powder has an emission wavelength different from that of the second non-fluorescent powder The wavelength of the light.
  • micro-matrix display device of embodiment 83 wherein the first non-fluorescent powder comprises a pigment or a dye.
  • micro-matrix display device of embodiment 84 wherein the second non-fluorescent powder comprises a pigment or a dye.
  • the phosphor pixel further comprises at least one phosphor powder, the phosphor powder having a different wavelength of light than the first non-fluorescent powder and the second non-fluorescent The wavelength of the light powder.
  • micro-matrix display device of embodiment 87 wherein the phosphor powder is yellow or blue.
  • micro-matrix display device of embodiment 87 wherein the phosphor powder comprises Garnet phosphor powder.
  • micro-matrix display device of embodiment 89 wherein the phosphor comprises YAG:Ce.
  • micro-matrix display device of embodiment 85 wherein the phosphor pixel further comprises at least one third non-fluorescent powder, the third non-fluorescent powder having an emission wavelength different from the first non-fluorescent powder And an emission wavelength of the second non-fluorescent powder.
  • micro-matrix display device of embodiment 91 wherein the third non-fluorescent powder comprises a pigment or a dye.
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of blue light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting a diode pixel; wherein the phosphor pixels comprise at least one non-fluorescent powder and at least one phosphor powder; wherein the non-fluorescent powder has an emission wavelength different from an emission wavelength of the phosphor powder.
  • micro-matrix display device of embodiment 94 wherein the non-fluorescent powder comprises a pigment or a dye.
  • micro-matrix display device of embodiment 95 wherein the non-fluorescent powder is red or green.
  • micro-matrix display device of embodiment 94 wherein the phosphor powder is yellow or blue.
  • micro-matrix display device of embodiment 97 wherein the phosphor powder comprises Garnet phosphor powder.
  • micro-matrix display device of embodiment 98 wherein the phosphor comprises YAG:Ce.
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of blue light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting a diode pixel; wherein the phosphor pixels comprise at least one red non-fluorescent powder, at least one green non-fluorescent powder, and at least one blue non-fluorescent powder.
  • micro-matrix display device of embodiment 98 wherein the red non-fluorescent powder, the green non-fluorescent powder, and the blue non-fluorescent powder comprise a pigment or a dye.
  • a micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of blue light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting a diode pixel; wherein the phosphor pixels comprise at least one red non-fluorescent powder, at least one green non-fluorescent powder, and at least one yellow phosphor powder.
  • micro-matrix display device of embodiment 102 wherein the red non-fluorescent powder and the green non-fluorescent powder comprise a pigment or a dye.
  • micro-matrix display device of embodiment 102 wherein the phosphor powder comprises Garnet phosphor powder.
  • micro-matrix display device of embodiment 104 wherein the phosphor comprises YAG:Ce.
  • the present invention provides a miniature light emitting device and a method of fabricating the same, which may include:
  • a micro-light-emitting device comprising: a pedestal, wherein the pedestal has a horizontal direction and a vertical direction; and a plurality of vertical traces are arranged parallel to the horizontal direction above the pedestal, wherein the vertical
  • the trace includes a first vertical trace, a second vertical trace, and a third vertical trace, which are arranged parallel to each other; a plurality of horizontal traces are arranged in parallel along the vertical direction above the base, wherein the trace
  • the horizontal traces include a first horizontal trace, a second horizontal trace, and a third horizontal trace arranged parallel to each other; and a plurality of LED strips arranged parallel to the horizontal direction above the pedestal
  • the light emitting diode strips include at least a first light emitting diode strip, a second light emitting diode strip, and a third light emitting diode strip, which are arranged parallel to each other.
  • Each of the light emitting diode strips has a plurality of light emitting diodes, and each of the light emitting diodes
  • the first metal electrode and the second metal electrode are disposed, wherein the first metal electrode pairs of the light emitting diodes on the first LED strip Electrically connected to the first horizontal trace, the second horizontal trace, and the third horizontal trace, wherein the second metal electrodes of the LEDs on the first LED strip are electrically Connected to the first vertical trace, wherein the first metal electrodes of the LEDs on the second LED strip are electrically connected to the first horizontal trace, the second horizontal trace, and the a third horizontal trace, wherein the second metal electrodes of the LEDs on the second LED strip are electrically connected to the second vertical trace, wherein the illuminations on the third LED strip
  • the first metal electrodes of the diode are electrically connected to the first horizontal trace, the second horizontal trace, and the third horizontal trace, wherein the light emitting diodes on the third LED strip
  • the second metal electrodes have a common electrical connection to the third
  • the micro-light-emitting device of the first embodiment wherein the light-emitting diode strips have at least one epitaxial substrate, including a first epitaxial substrate, a second epitaxial substrate, and a third epitaxial substrate.
  • the light emitting diodes include a plurality of semiconductor epitaxial layers above the epitaxial substrate, including a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a third semiconductor epitaxial layer, wherein the first semiconductor epitaxial layer The layer is located above the first epitaxial substrate, the second semiconductor epitaxial layer is located above the second epitaxial substrate, and the third semiconductor epitaxial layer is located above the third epitaxial substrate, wherein the first illumination
  • the diode strip and the second LED strip and the third LED strip respectively have a first LED, a second LED, and a third LED, wherein the first LED, the second LED, and the first The first metal electrodes of the three LEDs are electrically connected to the first horizontal trace to form a first pixel, wherein
  • micro-light-emitting device of embodiment 2 wherein the second metal electrodes are located below the epitaxial substrate and are electrically connected to the vertical traces, and the first metal electrodes are located at the semiconductor strips Above the crystal layer, and electrically connected to the horizontal traces, the light emitting diodes have a structure in which a vertical current is conducted.
  • micro-light-emitting device of embodiment 2 wherein the epitaxial substrate is cut using a laser cutting technique to make the light-emitting diodes independent of each other.
  • the micro-light-emitting device of the first embodiment wherein the first metal electrodes are electrically connected to the horizontal traces, and the second metal electrodes are electrically connected to the vertical traces. Connection, conductive metal strip connection, gold ball connection, metal bond connection, ITO conductive glass line connection, anisotropic conductive glue connection and the above integrated manner.
  • micro-light-emitting device of embodiment 1, wherein the light-emitting diode strips comprise red light-emitting diode strips, green light-emitting diode strips, and blue light-emitting diode strips.
  • the light-emitting diode strips comprise red light-emitting diode strips, green light-emitting diode strips, blue light-emitting diode strips, ultraviolet (including UVA, UVB, UVC) light-emitting diode strips, Three combinations of infrared light emitting diode strips.
  • micro-light-emitting device of embodiment 1, wherein the material of the susceptor comprises a printed circuit board (PCB), a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, and a circuit substrate.
  • PCB printed circuit board
  • the epitaxial substrate comprises a sapphire substrate, a gallium nitride substrate, an aluminum nitride substrate, a gallium arsenide substrate, a gallium phosphide substrate, an indium phosphide substrate, and a zinc oxide substrate.
  • silicon substrate silicon carbide substrate.
  • micro-light-emitting device of embodiment 1, wherein the thickness of the epitaxial substrate remaining after polishing by polishing is about 10 micrometers to 200 micrometers.
  • micro-light-emitting device of embodiment 1, wherein the thickness of the epitaxial substrate remaining after polishing by polishing is about 10 micrometers to 30 micrometers.
  • a miniature illumination device comprising: a first pedestal; a second pedestal parallel to the first pedestal a plurality of scan traces disposed on the first pedestal in parallel along a first direction and facing the second pedestal; a plurality of data traces disposed in parallel along a second direction a second pedestal facing the first pedestal, the first direction being perpendicular to the second direction; and a plurality of light emitting diode strips disposed parallel to the first pedestal along the second direction and the Between the second pedestals, each of the LED strips is electrically connected to a data trace, wherein each of the LED strips is electrically connected to the scan traces.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, wherein the light-emitting diodes of each of the light-emitting diode strips are correspondingly electrically connected to a data trace, wherein Among the LED strips, the LEDs electrically connected to the same scan trace form a pixel.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising an epitaxial substrate, a first electrode and a second electrode, wherein the first electrode The second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces, respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising an epitaxial substrate, a first electrode and a second electrode, wherein the first electrode The second electrode is disposed on the opposite side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces, respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes
  • the light-emitting diodes comprise an epitaxial substrate, each light-emitting diode comprising a first electrode and a second electrode,
  • the first electrodes and the second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes
  • the light-emitting diodes comprise an epitaxial substrate
  • each of the light-emitting diodes comprises a first electrode and a second electrode.
  • the first electrodes and the second electrodes are disposed on different sides of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes
  • the light-emitting diodes comprise an epitaxial substrate and a first electrode
  • each of the light-emitting diodes comprises a second electrode.
  • the first electrode and the second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes
  • the light-emitting diodes comprise an epitaxial substrate and a first electrode
  • each of the light-emitting diodes comprises a second electrode.
  • the first electrode and the second electrodes are disposed on different sides of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, the light emitting Layer And disposed between the first type semiconductor layer and the second type semiconductor layer.
  • the light-emitting diode strips comprise a red light-emitting diode strip, a green light-emitting diode strip, and a blue light-emitting diode strip.
  • the light-emitting diode strips comprise a red light-emitting diode strip, a green light-emitting diode strip, a blue light-emitting diode strip, and an ultraviolet light (including UVA, UVB, UVC). Any combination of a light emitting diode strip, an infrared light emitting diode strip, and a white light emitting diode strip.
  • micro-light-emitting device of embodiment 18, wherein the first pedestal can be a transparent substrate.
  • micro-light-emitting device of embodiment 18, wherein the second pedestal comprises a printed circuit board (PCB), a ceramic substrate, a metal substrate, a silicon substrate, and a copper substrate.
  • PCB printed circuit board
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprising an epitaxial substrate, the epitaxial substrate being ultra-thinned by a grinding thickness.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes
  • the light-emitting diodes comprise an epitaxial substrate
  • the epitaxial substrate comprises a plurality of grooves
  • the grooves are located Between the light emitting diodes.
  • each of the light emitting diode strips comprises a plurality of light emitting diodes, each of which comprises gallium nitride (GaN), gallium arsenide (GaAs), or gallium phosphide. (GaP).
  • GaN gallium nitride
  • GaAs gallium arsenide
  • GaP gallium phosphide.
  • a UV glue covering at least one of the light-emitting diode strips
  • a phosphor powder distributed in the UV glue, wherein the phosphor powder It can be yttrium aluminum garnet (YAG).
  • micro-light-emitting device of embodiment 18, further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be a silicate (Silicate).
  • a miniature illuminating device comprising: M scanning traces disposed in parallel along a first direction, M being a positive integer greater than 2; N data traces disposed in parallel along a second direction, The first direction is perpendicular to the second direction, N is a positive integer greater than 2; and N light emitting diode strips are disposed in parallel along the second direction, wherein the ith LED strip is correspondingly and i
  • the data traces are electrically connected, i is a positive integer, 2 ⁇ i ⁇ N, wherein the jth LED of each LED strip is electrically connected to the jth scan trace, and j is a positive integer. 2 ⁇ j ⁇ M.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, wherein the light-emitting diodes of each of the light-emitting diode strips are correspondingly electrically connected to a data trace, wherein Among the LED strips, the LEDs electrically connected to the same scan trace form a pixel.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising an epitaxial substrate, a first electrode and a second electrode, wherein the first electrode The second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising an epitaxial substrate, a first electrode and a second electrode, wherein the first electrode The second electrode is disposed on the opposite side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes
  • the light-emitting diodes comprise an epitaxial substrate, each light-emitting diode comprising a first electrode and a second electrode,
  • the first electrodes and the second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes
  • the light-emitting diodes comprise an epitaxial substrate, each light-emitting diode comprising a first electrode and a second electrode,
  • the first electrodes and the second electrodes are disposed on different sides of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprising an epitaxial substrate and a first electrode, each light-emitting diode comprising a second electrode,
  • the first electrode and the second electrodes are disposed on the same side of the epitaxial substrate, the first electrodes and the second electrodes
  • the data traces and the scan traces are electrically connected to the scan lines.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes
  • the light-emitting diodes comprise an epitaxial substrate and a first electrode
  • each of the light-emitting diodes comprises a second electrode.
  • the first electrode and the second electrodes are disposed on different sides of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, the light emitting The layer is disposed between the first type semiconductor layer and the second type semiconductor layer.
  • micro-light-emitting device of embodiment 44 wherein the light-emitting diode strips are electrically connected to the horizontal traces, including a wire bonding connection, a conductive metal strip connection, a gold ball connection, a metal bonding connection, and an ITO conductive connection. Glass line connections, anisotropic conductive glue connections, and the above integrated approach.
  • micro-light-emitting device of embodiment 44 wherein the light-emitting diode strips are electrically connected to the data traces, including a wire bonding connection, a conductive metal strip connection, a gold ball connection, a metal bonding connection, and an ITO conductive connection. Glass line connections, anisotropic conductive glue connections, and the above integrated approach.
  • the light-emitting diode strips comprise a red light-emitting diode strip, a green light-emitting diode strip, and a blue light-emitting diode strip.
  • the light-emitting diode strips comprise a red light-emitting diode strip, a green light-emitting diode strip, a blue light-emitting diode strip, and an ultraviolet light (including UVA, UVB, UVC). Any combination of a light emitting diode strip, an infrared light emitting diode strip, and a white light emitting diode strip.
  • micro-light-emitting device of embodiment 44 further comprising a first pedestal, wherein the scan traces are disposed on the first pedestal, wherein the first pedestal may be a transparent substrate.
  • micro-light-emitting device of embodiment 44 further comprising a second pedestal, wherein the data traces are disposed on the second pedestal, wherein the second pedestal comprises a printed circuit board (PCB), ceramic A substrate, a metal substrate, a silicon substrate, or a copper substrate.
  • PCB printed circuit board
  • micro-light-emitting device of embodiment 44 further comprising: a scanning circuit electrically connected to the scanning traces; and a data circuit electrically connected to the data traces.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprising an epitaxial substrate, the epitaxial substrate being subjected to a polishing thickness ultra-thinning treatment.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprising an epitaxial substrate, the epitaxial substrate comprising a plurality of grooves, the grooves being located Between the light emitting diodes.
  • each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each of which comprises gallium nitride (GaN), indium gallium nitride (InGaN), aluminum nitride AlGaN, AlInGaN, InN, AlN, boron nitride (BN), boron nitride indium (BInN), Boron nitride (BGaN), aluminum nitride boron (AlBN), aluminum borosilicate (AlBGaN), aluminum indium borosilicate (AlInBGaN), gallium arsenide (GaAs), or gallium phosphide (GaP).
  • GaN gallium nitride
  • InGaN indium gallium nitride
  • AlGaN aluminum nitride AlGaN, AlInGaN, InN, AlN
  • micro-light-emitting device of embodiment 44 further comprising: a UV glue covering at least one of the light-emitting diode strips; and a phosphor powder distributed in the UV glue.
  • micro-light-emitting device of embodiment 44 further comprising: a UV glue covering at least one of the light-emitting diode strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder It can be blue, red, green or yellow.
  • micro-light-emitting device of embodiment 44 further comprising: a UV glue covering at least one of the light-emitting diode strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder It can be yttrium aluminum garnet (YAG).
  • a UV glue covering at least one of the light-emitting diode strips
  • a phosphor powder distributed in the UV glue, wherein the phosphor powder It can be yttrium aluminum garnet (YAG).
  • micro-light-emitting device of embodiment 44 further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be a nitride ( Nitride).
  • micro-light-emitting device of embodiment 44 further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be a silicate (Silicate).
  • micro-light-emitting device of embodiment 44 further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be K 2 SiF 6 : Mn 4 + (KSF).
  • micro-light-emitting device of embodiment 44 further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be SrGa 2 S 4 : Eu 2 + (SGS).
  • a method of fabricating a miniature light emitting device comprising: providing a first pedestal; providing a second pedestal, the second pedestal being disposed in parallel with respect to the first pedestal; and providing a plurality of scanning traces, The scan traces are disposed on the first pedestal in parallel along a first direction and face the second pedestal; a plurality of data traces are disposed, and the data traces are disposed in parallel along a second direction On the second pedestal facing the first pedestal, the first direction is perpendicular to the second direction; and a plurality of LED strips are disposed, the LED strips are disposed in parallel along the second direction Between the first pedestal and the second pedestal, each of the LED strips is electrically connected to a data trace, wherein each of the LED strips is electrically connected to the scan traces.
  • a method of fabricating a miniature light emitting device comprising: providing a first pedestal, the first pedestal comprising a plurality of scan traces, the scan traces being disposed in parallel along a first direction; providing a a second pedestal, the second pedestal is disposed in parallel with respect to the first pedestal, the second pedestal includes a plurality of data traces, the data traces are disposed in parallel along a second direction, and face The first pedestal, the first direction is perpendicular to the second direction; and a plurality of LED strips are disposed, the LED strips are disposed in parallel with the first pedestal along the second direction, and the first pedestal Between the two pedestals, each of the LED strips is electrically connected to a data trace, wherein each of the LED strips is electrically connected to the scan traces.
  • a method of fabricating a miniature light emitting device comprising: providing M scan traces, the scan traces being disposed in parallel along a first direction, M being a positive integer greater than 2; providing N data traces The data traces are along a second direction is disposed in parallel, the first direction is perpendicular to the second direction, N is a positive integer greater than 2; and N light emitting diode strips are provided, the light emitting diode strips are parallel along the second direction
  • the ith LED strip is electrically connected to the ith data trace, i is a positive integer, 2 ⁇ i ⁇ N, wherein the jth LED of each LED strip is correspondingly The jth scan trace is electrically connected, and j is a positive integer, 2 ⁇ j ⁇ M.
  • the present invention provides a light emitting device, a light emitting diode, a laser diode, and a method of fabricating the same, and embodiments thereof may include:
  • a light-emitting device comprising: a substrate having at least one pad; a light-emitting chip having at least one electrode, wherein the at least one pad and the at least one electrode face each other and aligned; and at least a first interface
  • the layer is formed between the at least one pad and the at least one electrode by absorbing energy of a laser pulse to connect the at least one pad and the at least one electrode.
  • the material of the substrate comprises a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, a circuit substrate, or a flexible Printed circuit board (Flexible Print Circuit).
  • the light emitting device of embodiment 1, wherein the material of the at least one pad comprises gold (Au), gold-tin alloy (Au-Sn), nickel-platinum-silver alloy (Ni-Pt-Ag) or copper (Cu) ).
  • the at least one first interface layer is a modified layer formed by receiving the laser pulse energy focused on the at least one electrode to connect the at least one pad and the at least one electrode.
  • the at least one first interface layer is a modified layer formed by receiving energy of the laser pulse focused on a contact surface of the at least one pad and the at least one electrode.
  • the substrate has at least a uniform aperture disposed through the substrate, the at least consistent aperture having a first material, wherein the at least one pad covers one end of the at least consistent aperture and The first material is electrically and thermally conductively connected, wherein the first material is a conductive and thermally conductive material.
  • the at least one first interface layer is a modified layer formed by receiving energy of the laser pulse focused on the at least one pad to connect the at least one pad and the At least one electrode.
  • the at least one first interface layer is a modified layer formed by receiving energy of the laser pulse energy focused on the first material to connect the at least one pad and the At least one electrode.
  • the at least one first interface layer receives the laser pulse having a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
  • the at least one first interface layer is formed by receiving energy of the laser pulse energy focused on a bare surface of the first material at a position other than the end of the through hole. And a modified layer to connect the at least one pad and the at least one electrode.
  • the laser pulse received by the at least one first interface layer has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
  • a light emitting device comprising: a substrate having at least one pad; a light emitting chip having at least one electrode, wherein the at least one pad and the at least one electrode face each other and aligned; and at least a second interface And a layer between the at least one pad and the at least one electrode, wherein the at least one second interface layer connects the at least one pad and the at least one electrode.
  • the material of the substrate comprises a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, a wiring substrate, or a flexible Printed circuit board (Flexible Print Circuit).
  • the material of the at least one pad comprises gold (Au), gold-tin alloy (Au-Sn), nickel-platinum-silver alloy (Ni-Pt-Ag) or copper (Cu) ).
  • the substrate has at least a uniform aperture disposed through the substrate, the at least consistent aperture having a first material, wherein the at least one pad covers one end of the at least consistent aperture and The first material is electrically and thermally conductively connected, wherein the first material is a conductive and thermally conductive material.
  • the second interface layer is a second interface layer formed by at least one colloid receiving energy of the laser pulse energy focused on the first material to connect the at least one interface a pad and the at least one electrode.
  • a method of fabricating a light emitting device comprising: providing a substrate having at least one pad; providing a light emitting chip, the light emitting chip having at least one electrode; aligning the at least one pad and the at least one electrode The at least one pad is in contact with the at least one electrode; and a first interfacial layer is formed on the contact surface of the at least one pad with the at least one electrode by using a laser pulse.
  • the material of the substrate comprises a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, and a wiring A substrate or a flexible printed circuit board (Flexible Print Circuit).
  • the material of the at least one pad comprises gold (Au), gold-tin alloy (Au-Sn), nickel-platinum-silver alloy (Ni-Pt-Ag) or Copper (Cu).
  • the substrate is provided with at least a uniform hole penetrating the substrate, the at least one of the consistent holes being provided with a first material, wherein the at least one pad covers the at least one of the consistent holes One end is open and electrically connected to the first material, wherein the first material is an electrically conductive and thermally conductive material.
  • a method of fabricating a light emitting device comprising: providing a substrate having at least one pad; providing a light emitting chip, the light emitting chip having at least one electrode; providing at least one colloid to the at least one pad and the at least Between an electrode; and using a laser pulse, the at least one colloid forms a second interfacial layer to connect the at least one pad and the at least one electrode.
  • the material of the substrate comprises a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, Glass substrate, circuit substrate or flexible printed circuit board (Flexible Print Circuit).
  • Au gold
  • Au-Sn gold-tin alloy
  • Ni-Pt-Ag nickel-platinum-silver alloy
  • Cu Copper
  • the method of manufacturing the illuminating device of Embodiment 53 wherein the substrate is provided with at least a uniform hole through the substrate, the at least one of the consistent holes being provided with a first material, wherein the at least one pad covers the at least one of the consistent holes One end is connected to the first material electrically and thermally, wherein the first material is a conductive and thermally conductive material.
  • a method of fabricating a light-emitting device according to embodiment 65 wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser spot has a spot diameter of 10 um to 150 um.
  • the at least one colloid material comprises a flux (Flux), silver (Ag), tin (tin) or an anisotropic conductive film (Anisotropic Conductive Film).
  • a light emitting diode comprising: a substrate having a pad; an LED chip having an electrode; and a laser cauterization modifying layer formed between the pad and the electrode to connect the pad And the electrode.
  • a light emitting diode comprising: a substrate having a pad; an LED chip having an electrode; and a laser cauterization eutectic layer formed between the pad and the electrode to connect the pad And the electrode.
  • a light emitting diode comprising: a substrate having a pad; an LED chip having an electrode; and a laser cauterizing solder layer formed between the pad and the electrode to connect the pad and The electrode.
  • a laser diode comprising: a substrate having a pad; a laser diode chip having an electrode; and a laser cauterization modifying layer formed between the pad and the electrode to connect the pad And the electrode.
  • a laser diode comprising: a substrate having a pad; a laser diode chip having an electrode; and a laser-fired eutectic layer formed between the pad and the electrode to connect the pad And the electrode.
  • a laser diode comprising: a substrate having a pad; a laser diode chip having an electrode; and a laser cauterizing solder layer formed between the pad and the electrode to connect the pad and The electrode.
  • a method of fabricating a light emitting diode comprising: providing a substrate having a pad; providing an LED chip, the LED chip having an electrode; and using a laser pulse at the at least one pad
  • the contact surface of the at least one electrode forms a laser-fired eutectic layer, or a laser-fired modified layer, or a laser-fired solder layer.
  • a method of fabricating a laser diode comprising: providing a substrate having a pad; providing a laser diode chip having an electrode; and using a laser pulse at the at least one pad The contact surface of the at least one electrode forms a laser-fired eutectic layer, or a laser-fired modified layer, or a laser-fired solder layer.
  • a method of fabricating a light emitting diode comprising: providing a substrate having a pad; providing an LED chip, the LED chip having an electrode; and using a laser pulse die bonding method to make the electrode
  • the pads are structurally connected and electrically connected.
  • a method of fabricating a laser diode comprising: providing a substrate having a pad; providing a laser diode chip having an electrode; and using a laser pulse die bonding method to cause the electrode to The pads are structurally connected and electrically connected.
  • the invention provides a method for manufacturing a monolithic light emitting diode (LED) micro display panel on an active matrix (AM) panel, comprising a plurality of LED pixels, each LED pixel comprising an n electrode and a p electrode arranged in a matrix LED pixels; a plurality of rows and a plurality of columns, n electrodes of LED pixels in a row of the matrix are electrically connected to the bus, and the p electrodes of each LED pixel are individually electrically connected to corresponding driving circuits on the AM panel Output.
  • LED monolithic light emitting diode
  • AM active matrix
  • the manufacturing method comprises: providing a substrate of an LED micro display panel; covering a surface of the substrate with a plurality of materials, wherein the plurality of material covering layers Combining the configurations to illuminate upon activation; patterning the material of the plurality of capping layers by moving a portion of each cap layer down to the surface of the substrate; on the patterned plurality of capping layers of the material and surface of the substrate Depositing a current diffusion layer; providing a metal multilayer on the current spreading layer; patterning the metal in the form of a first portion of the metal multilayer on the patterned plurality of overlapping layers and a second portion of the metal multilayer on the surface of the substrate Multi-layered and electrically disconnected to form a monolithic LED microdisplay panel; providing a plurality of active control circuits on the surface of the AM panel; and combining a single LED microdisplay panel with an AM panel using a conductive solder material Each of the individual LEDs is electrically insulated from each other and independently controlled by a corresponding active control circuit chip connected thereto, and
  • FIG. 1A is a schematic structural view of a display device according to a first preferred embodiment of the present invention.
  • FIG. 1B is a circuit diagram of a display device according to a first preferred embodiment of the present invention.
  • FIGS. 2A to 2H are schematic diagrams showing the process of a light emitting diode matrix of a display device according to a first preferred embodiment of the present invention.
  • 3A to 3H are schematic diagrams showing the process of a light emitting diode matrix of a display device according to a first preferred embodiment of the present invention.
  • FIGS. 4A to 4G are schematic diagrams showing the structure of a display device according to a second preferred embodiment of the present invention.
  • 5A to 5D are schematic views showing the process of a phosphor matrix according to a second preferred embodiment of the present invention.
  • 6A-6E are schematic diagrams showing the process of a phosphor matrix according to a second preferred embodiment of the present invention.
  • FIG. 7A to 7C are side views showing the structure of a display device according to a second preferred embodiment of the present invention.
  • 8A to 8C are side views showing the structure of a display device according to a second preferred embodiment of the present invention.
  • 9A to 9C are side views showing the structure of a display device according to a second preferred embodiment of the present invention.
  • Figure 10 is a schematic view showing the structure of a light-emitting device according to a third preferred embodiment of the present invention, the micro-light-emitting device having a vertical structure.
  • FIG. 11A to FIG. 11F are schematic diagrams showing the structure of a light-emitting device according to a third preferred embodiment of the present invention.
  • the micro-light-emitting device has a flip-chip structure, and FIGS. 11C and 11D show metal electrodes of the light-emitting diode strips, wherein FIG. 11E and FIG. Figure 11F shows the LED strip being laser cut.
  • FIG. 12A is a schematic view showing the structure of a light-emitting device according to a third preferred embodiment of the present invention, which has a horizontal structure and is connected using a conductive metal strip.
  • FIG. 12B is a schematic structural view of a light-emitting device according to a third preferred embodiment of the present invention, the micro-light-emitting device having a horizontal structure and connected by wire bonding.
  • Figure 13 is a schematic view showing the structure of a light-emitting device according to a third preferred embodiment of the present invention, which has a vertical horizontal structure and is connected by a conductive glass line of ITO.
  • Figure 14 is a circuit block diagram of a light emitting device according to a third preferred embodiment of the present invention.
  • 15A and 15B are schematic views of a light-emitting device according to a fourth preferred embodiment of the present invention, showing different laser pulse focus positions.
  • 16A to 16C are schematic views of a light-emitting device according to a fourth preferred embodiment of the present invention, which show different laser pulse focus positions.
  • 17A and 17B are schematic views of a light-emitting device according to a fourth preferred embodiment of the present invention, showing different laser pulse focus positions.
  • 18A to 18C are schematic views of a light-emitting device according to a fourth preferred embodiment of the present invention, showing different laser pulse focus positions.
  • 2601-1, 2601-2, 2601-3 scan trace
  • the display device 10 can be used as a micro-matrix display device (for example, a micro LED display device), which can include an LED matrix 12 and a phosphor matrix 11 to match each other and form a plurality of pixels/ Pixels, each pixel/pixel has a corresponding LED and a phosphor, and the LED matrix 12 is formed directly on a wafer (epitaxial) substrate instead of moving a plurality of LED chips. It can avoid the difficulties or problems encountered in massive transfer.
  • the circuit of the LED matrix 12 is also formed directly on the wafer substrate.
  • the LED matrix 12 can be a vertical current conducting structure. More specific technical content will be explained below.
  • the LED matrix 12 is formed on a wafer substrate (including sapphire, Si, SiC, GaN substrate) including a first polarity semiconductor layer 122, a second polarity semiconductor layer 121, and a quantum.
  • the epitaxial structure of the well light-emitting structure layer 123 (including a single-weight sub-well, a multiple quantum well or a quantum dot light-emitting structure) (for example, completed by an MOCVD or MBE epitaxial process), and the quantum well light-emitting structure layer 123 is disposed at the first polarity Semiconductor layer 122 and second polarity semiconductor Between the body layers 121.
  • the first polarity semiconductor layer 122 and the second polarity semiconductor layer 121 may be a P-pole semiconductor layer and an N-polar semiconductor layer, respectively, or may be an N-pole semiconductor layer and a P-pole semiconductor layer, respectively.
  • the nitride semiconductor layer may be the first polar semiconductor layer 122 or the second polar semiconductor layer 121, and the nitride semiconductor layer may include gallium nitride (GaN) as a main element and indium (In) as an additive element and/or Aluminum (Al) and/or boron (B) to achieve high power output light emitting diodes emitting light of different colors including blue or UV (including UVA, UVB, UVC).
  • GaN gallium nitride
  • In indium
  • Al Aluminum
  • B boron
  • a metal conduction layer 124 is formed on the lower surface of the second polarity semiconductor layer 121, and the two are electrically connected; the metal conduction layer 124 is covered with the lower surface of the second polarity semiconductor layer 121.
  • the epitaxial structure is placed on a non-conductive carrier substrate 125 such that the lower surface of the metal conduction layer 124 (ie, the lower surface 12B of the LED matrix 12, as shown in FIG. 2A) contacts the non-conductive carrier.
  • the non-conductive carrier substrate 125 may be a substrate made of spinel, silicon carbide (SiC) or sapphire, or a ceramic substrate, and has electrical insulating properties and is composed of a ceramic material such as alumina. One of aluminum nitride, zirconium oxide and calcium fluoride.
  • the non-conductive carrier substrate 125 may also be glass or polyimide to achieve a flexible nature. However, the non-conductive carrier substrate 125 can also use any suitable insulating and flexible material.
  • the epitaxial structure and the metal conduction layer 124 disposed on the non-conductive carrier substrate 125 are etched (eg, dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching).
  • etched eg, dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching.
  • another etching process eg, dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching
  • another etching process eg, dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching
  • the epitaxial structure can be formed into a plurality of light emitting diode pixels 120 arranged in a matrix by using the first and second etching trenches 126, 127 in different extending directions, each of the light emitting diode pixels 120 including the first pole
  • the semiconductor layer 122, the second polarity semiconductor 121, and the quantum well light-emitting structure layer 123 The LED pixels 120 are separated by the first etching trench 126 along the column direction X. Therefore, the adjacent LED pixels 120 on the same column are the first polarity semiconductor layer 122 and the second polarity semiconductor. 121 and the quantum well light-emitting structure layer 123 are not connected, contacted, or turned on.
  • the first polar semiconductor layer 122 and the quantum well light emitting structure layer 123 of the LED pixels 120 are separated by the second etching 127 trenches along the row direction Y, but the second polar semiconductor layer 121 is still connected; The adjacent LED pixels 120 on the same row are only connected to the second polarity semiconductor layer 121.
  • the metal conduction layer 124 is also divided into a plurality of metal conduction layers 124 by the first etching trenches 126 , and each of the metal conduction layers 124 extends along the row direction Y and is formed in the second polarity semiconductor of the LED pixels 120 . 121, and electrically connected to the second polarity semiconductor 121.
  • the second polarity semiconductors 121 of the LED pixels 120 located in the same row are connected to the same metal conduction layer 124.
  • Each of the LED pixels 120 can produce light of excellent brightness and can be of a smaller size to form individual pixels (pixels).
  • the upper surface 12A of each of the light emitting diode pixels 120 may have a rectangular or square shape with one side (for example, 10 ⁇ m) of 50 ⁇ m or less. Therefore, in the light emitting diode matrix 12 having one side of 600 ⁇ m and the other side of 300 ⁇ m, the distance between the light emitting diode pixels 120 is sufficient to realize a flexible display device.
  • the LED matrix 12 further includes an insulating layer 128.
  • the insulating layer 128 can be formed on the non-conductive carrier substrate 125 by a process such as evaporation, and covers the first etch trench 126 and the second etch trench 127; and can also be etched (for example, dry etching, wet etching, RIE etching, PEC) The process of etching, isotropic etching or anisotropic etching, polishing, thinning or planarization removes the insulating layer 128 overlying the first polar semiconductor layer 122 to expose the first polar semiconductor layer 122 Upper surface 12A.
  • the insulating layer 128 can serve as a shielding layer to keep the respective LED pixels 120 isolated.
  • the shielding layer 128 may include a black insulating material or a white insulating material according to the function of the display device; when a shielding layer 128 including a white insulating material is used, the reflectance may be improved; when the shielding layer 128 including a black insulating material is used, It has a reflectivity while increasing the contrast ratio.
  • the LED matrix 12 further includes a plurality of conductor lines 129 extending along the column direction X formed on the upper surface 12A of the first polar semiconductor 122 of the LED pixel 120, and electrically connected to the first A polar semiconductor 122. That is, the second polarity semiconductors 121 of the LED pixels 120 on the same column are connected to the same conductor line 129.
  • the conductor line 129 is perpendicular to the direction in which the metal conduction layer 124 extends to form a matrix circuit 20 (shown in FIG. 1B).
  • the circuit 20 includes a plurality of LED pixels 120 connected in series (through the conductor line 129).
  • LED pixels 120 (implemented by the metal conduction layer 124) 22 connected in series with the cathode.
  • the LED pixels 120 at a particular address can be rendered light.
  • the phosphor matrix 11 is disposed on the upper surface 12A of the LED matrix 12, and includes a plurality of phosphor pixels 11R, 11G, and 11B, and the phosphor pixels 11R, 11G, and 11B respectively correspond to The LED pixels 120.
  • the phosphor matrix 11 can be a fluorescent patch that can include red phosphors and green phosphors that make up individual pixels. That is, at the red phosphor pixel 11R, a red phosphor that converts blue light into red light may be formed on the light emitting diode pixel 120; at the green phosphor pixel 11G, the light emitting diode pixel 120 may be A green phosphor that converts blue light into green light is formed thereon.
  • the light emitting diode pixels 120 may be separately provided.
  • the red, green, and blue phosphor pixels 11R, 11G, and 11B may constitute one pixel group.
  • the LED pixel 120 may be a white light emitting diode including yellow phosphor powder; in this case, the red phosphor powder, the green phosphor powder, and the blue phosphor powder may be disposed on the white light emitting diode.
  • a black shielding layer may be disposed between the phosphors to increase the contrast ratio.
  • a red color (R) pixel, a green (G) pixel, and a blue (B) pixel can be designed to form a full color of a picture by applying red phosphor and green phosphor to a blue semiconductor light emitting diode.
  • Each pixel can contain any combination of red, green, blue, yellow, and white.
  • Each pixel can comprise any combination of visible light and invisible light.
  • the phosphor powder contained in the phosphor matrix 11 can be made of a material having high stable light-emitting characteristics, for example, garnet is (Ganet), sulfide (Sulfate), nitride (Nitrate), silicate (Silicate), Aluminate or any combination thereof, but not limited thereto, produces a light having a wavelength of about 300 nm to 700 nm; and the phosphor powder has a particle diameter of 1 to 25 ⁇ m.
  • the method generally comprises the following steps: first, mixing the phosphor powder into the transparent light-transmitting silica gel, and mixing the phosphor powder and the silica gel by a homogenizer to form a colloid; Then, the colloid is formed on the peelable transparent substrate by spraying or wet coating to form a phosphor layer; then, the phosphor layer is pre-tested to achieve the target color temperature.
  • a transparent silica gel having a thickness of 50 to 200 ⁇ m is further coated on the surface of the phosphor layer to form a fluorescent patch.
  • the LED matrix 32 included in the display device 30 may be a horizontally conductive structure.
  • the LED matrix 32 includes a first polarity semiconductor layer 322, a quantum well light emitting structure layer 323, a second polarity semiconductor 321 and a non-conductive carrier substrate 325 stacked.
  • FIG. 3A the LED matrix 32 includes a first polarity semiconductor layer 322, a quantum well light emitting structure layer 323, a second polarity semiconductor 321 and a non-conductive carrier substrate 325 stacked.
  • a portion of the epitaxial structure is removed, for example, by etching (including dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching) to form along An etched trench 326 extending in the row direction Y, the etched trench 326 exposing the upper surface of the non-conductive carrier substrate 325. Then, as shown in FIG.
  • a portion of the epitaxial structure is removed, for example, by etching (including dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching) to Forming an etched trench 327 extending along the row direction Y and the column direction X, the etched trench 327 exposing the upper surface of the second polar semiconductor 321; thus, along the column direction X, the second polar semiconductor 321 The width is greater than the width of the first polarity semiconductor 322.
  • etching including dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching
  • an insulating layer 328 is formed to cover the etching trenches 326 and 327, and the upper surface of the first polarity semiconductor 322 is exposed, but the second polarity semiconductor 321 and the metal conduction layer 324 are The upper surface is covered.
  • a plurality of conductor lines 329 extending in the column direction X are formed on the upper surface of the first polar semiconductor 322.
  • a phosphor matrix 31 (which may be a fluorescent patch) may be disposed on the upper surface 32A of the LED matrix 32.
  • the phosphor matrix 31 includes a shield layer 312 in addition to the phosphor pixels 31R, 31G, and 31B of different colors.
  • the shielding layer 312 is disposed between the phosphor pixels 31R, 31G, 31B, and may include a black or white insulating material to increase contrast or reflectance.
  • the LED pixel can be a flip-chip light-emitting diode
  • the non-conductive carrier substrate can be a circuit substrate of a Thin Film Transistor (TFT).
  • the circuit substrate of the TFT includes multiple a scan line (conductor line) and a plurality of data lines (metal conduction layers), each scan line (conductor line) is electrically connected to each column of LED pixels, and each of the data lines (metal conduction layer) and each row emits light
  • the diode pixels are electrically connected, and each of the LED pixels further includes a Thin Film Transistor (TFT) for controlling whether each LED pixel emits light or not.
  • TFT Thin Film Transistor
  • the LED pixel further includes a P pole electrode and an N pole electrode to respectively correspond to The conductor line and the metal conduction layer are electrically connected, and the P pole electrode and the N pole electrode are respectively disposed on the first polarity (P pole) semiconductor and the second polarity (N pole) semiconductor.
  • the matrix application circuit of the LED display screen and the circuit design of the epitaxial wafer of the LED are integrated to realize a single wafer, that is, an LED matrix.
  • the light source emitted by the LED is preferably UV light and short-wave blue light.
  • the LED pixels are controlled by means of column scanning, so that the individual LED pixels have respective driving currents and lighting times to adjust the luminous intensity.
  • a matrix of phosphors (patch) containing red, green and blue (R, G, B) phosphors is attached to the matrix of the light-emitting diodes, so that the LED pixels are used to excite the phosphors of the corresponding fluorescent patch pixels.
  • FIG. 4A shows a schematic structural view of a display device 2010 according to a second preferred embodiment of the present invention.
  • the display device 2010 can be a micro-matrix display device, which can include an LED matrix 2012 and a phosphor matrix 2011.
  • the LED matrix 2012 can be the LED matrix 12 or 32 of the above embodiment, or other A matrix of light-emitting diodes that are constructed in a manner.
  • the phosphor matrix 2011 is disposed on the LED matrix 2012 and includes a plurality of phosphor pixels, such as the first phosphor 20111R.
  • the phosphor matrix 2011 can be directly disposed or formed on the light emitting diode matrix 2012.
  • the first phosphor 20111R is a non-fluorescent powder portion, which does not contain a phosphor powder, but contains a pigment or a dye; the color or dye may be red and may be organic Or inorganic; in addition, the non-fluorescent powder portion may further comprise a photoresist, and a red pigment or dye is mixed with the photoresist.
  • the non-fluorescent powder portion can be formed on the light emitting diode matrix 2012 by a yellow light lithography process.
  • the LED matrix 2012 may include a second phosphor 20112G, which is a non-fluorescent powder portion, containing a pigment or a dye; the color or dye may be green and organic or Inorganic; in addition, the non-fluorescent powder portion may further comprise a photoresist, and a green pigment or dye is mixed with the photoresist.
  • the LED matrix 2012 can include both the first phosphor 20111R and the second phosphor 20112G, which are staggered with each other.
  • the LED matrix 2012 further includes a third phosphor 20113Y, which is staggered with the first phosphor 20111R and the second phosphor 20112G.
  • the third phosphor 20113Y is a non-fluorescent powder portion and contains a green pigment or dye (organic or inorganic).
  • the third phosphor 20113Y may also be a phosphor powder portion containing yellow phosphor powder.
  • the yellow phosphor powder comprises Garent, Silicate, Nitride, KSF, Silicon Fluorescent Powder, or may include YAG:Ce, LuAG:Ce, TbAG:Ce, (Y,Lu)AG:Ce, (Y , Tb) AG: Ce and other fluorescent powder.
  • the LED matrix 2012 may further include a third phosphor 20113B, which is a non-fluorescent powder portion, and contains a blue pigment or dye (organic or inorganic).
  • the LED matrix 2012 further includes a light transmissive portion 20114 and is alternately arranged with the first phosphor 20111R and the second phosphor 20112G.
  • the light transmitting portion 20114 does not include a hollow structure of any material, and may include only a silica gel material or the like that does not change the wavelength of light.
  • the phosphor matrix 2011 may be indirectly disposed or formed on the LED matrix 2012 , that is, the display device 2010 further includes a transparent substrate 20400, and the fluorescent device
  • the body matrix 2011 is formed on the light-transmitting substrate 20400, and then the light-transmitting substrate 20400 is directly disposed on the light-emitting diode matrix 2012.
  • the dye of the non-fluorescent powder portion may be selected from the trademark of BASF. or Products, for example, yellow fluorescent dyes can be F Yellow 083, or FYellow 170; red fluorescent dye can be F Red 305, or F Pink 285, or Red 495; green fluorescent dye can be F Yellow 083, or F Yellow 170, or F Green 850; blue fluorescent dye can be F Violet 570 or F Blue 650 or Blue 762.
  • yellow fluorescent dyes can be F Yellow 083, or FYellow 170
  • red fluorescent dye can be F Red 305, or F Pink 285, or Red 495
  • green fluorescent dye can be F Yellow 083, or F Yellow 170, or F Green 850
  • blue fluorescent dye can be F Violet 570 or F Blue 650 or Blue 762.
  • the dye may be selected from the following trademarks or models of BASF: Yel low D 0960, Yellow L 1061HD, Magenta P 4535, Yel low D 1085, Magenta L 4540, Yellow D 1155, Blue D 7086, Yellow D 1819, Blue D 7110F, Yellow L 2040, Orange D 2905, Red L 4100HD, Orange D 2961, Red L 4105HD, Red L 3630, Pink D 4450, Red D 3656HD, Magenta D 4500J, Violet D 5800, Magenta L 4530, Yellow 1061KJ, Yellow 1550K, Yellow 2040KJ, Magenta 4330KJ, Red 4410K, Magenta 4535KJ, Blue 7080KJ, Black 0066KJ, Red 3630KJ, Red 3890K, Yellow 1061J, Violet 5700K, Magenta 4500J, Green 8750K, Blue 7080J, Yellow D 1055, Yellow D 1245, Magenta D 4500J, Magenta D 4550J, Blue D
  • FIGS. 5A to 5D an exemplary method of forming the phosphor array 2011 of the type shown in FIG. 4E by a yellow light lithography process will be described below.
  • the raw material of the first phosphor 20111R of the mixed photoresist and the dye (or pigment) is first directly applied onto the light emitting diode matrix 2012.
  • the raw material of the first phosphor 20111R is exposed, baked, and developed to remove a portion of the raw material to form a plurality of first phosphors 20111R.
  • FIG. 5A the raw material of the first phosphor 20111R of the mixed photoresist and the dye (or pigment) is first directly applied onto the light emitting diode matrix 2012.
  • the raw material of the first phosphor 20111R is exposed, baked, and developed to remove a portion of the raw material to form a plurality of first phosphors 20111R.
  • the raw material of the second phosphor 20112G is applied onto the LED matrix 2012 and the first phosphor 20111R, and after exposure, baking, and development, part of the raw materials are removed to form a plurality of Two phosphors 20112G.
  • the raw material of the third phosphor 20113B is applied to the LED matrix 2012, the first phosphor 20111R, and the second phosphor 20112G, and after exposure, baking, and development, the removed portion is removed.
  • Raw materials, forming multiple Third phosphor 20113B is
  • FIGS. 6A to 6E an exemplary method of forming the phosphor array 2011 of the formula of FIG. 4G by a yellow light lithography process will be described below.
  • the raw material of the first phosphor 20111R is directly coated on the transparent substrate 20400; as shown in FIG. 6B, the raw material of the first phosphor 20111R is exposed, baked, and developed to form a plurality of materials.
  • FIG. 6C the raw material of the second phosphor 20112G is applied onto the transparent substrate 20400 and the first phosphor 20111R, and after exposure, baking, and development, a plurality of second phosphors 20112G are formed.
  • FIG. 6A the raw material of the first phosphor 20111R is directly coated on the transparent substrate 20400; as shown in FIG. 6B, the raw material of the first phosphor 20111R is exposed, baked, and developed to form a plurality of materials.
  • First phosphors 20111R As shown in FIG. 6
  • the raw material of the third phosphor 20113B is applied onto the transparent substrate 20400, the first phosphor 20111R, and the second phosphor 20112G, and exposed, baked, and developed to form a plurality of materials.
  • Third phosphor 20113B As shown in FIG. 6E, the transparent substrate 20400 is finally disposed on the LED matrix 2012.
  • the materials of the first phosphor 20111R, the second phosphor 20112G, and/or the third phosphor 20113B are formed in the light emitting diode matrix 2012 by a dispensing method. On the LED of the LED at a specific address. On the other hand, each of the first phosphor 20111R, the second phosphor 20112G, and the third phosphor 20113B can also be implemented as a fluorescent patch, and after being cut, attached to the LED matrix 2012. .
  • the phosphor matrix can be fabricated by a yellow lithography process, so that the size of the phosphor pixels can reach a micro level, so that it can be matched with small-sized (such as side length less than ⁇ 100 ⁇ m) LED pixels (or luminescence). Diode chip) to provide a matrix color display mode.
  • the display device can be used as a micro-light-emitting device or a matrix display device, and includes a pedestal 2000, a plurality of LED strips 2007-2009, a plurality of first traces 2004-2006, and a plurality of second traces 2001-2003.
  • the susceptor 2000 can be a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, and a circuit substrate, and a first direction 2100 and a second are vertically defined along the side length thereof.
  • Direction 2200; the first direction 2100 can be used as the vertical direction, and the horizontal direction 2200 can be used as the horizontal direction.
  • the LED strips 2007-2009 are disposed on the pedestal 2000 and carried by the susceptor 2000.
  • the LED strips 2007-2009 are arranged in parallel along the second direction 2200 on the susceptor 2000, and each of them includes a plurality of light emitting diodes arranged along the first direction 2100. Therefore, the light-emitting diodes included in the light-emitting diode strips 2007-2009 are arranged in a matrix as a whole.
  • the LED strips 2007-2009 each include three LEDs, and the whole includes nine LEDs, and three pixels 2024-2026 can be defined.
  • Light-emitting diode strips 2007-2009 can emit different colors of light, for example, the light-emitting diodes of the first light-emitting diode strips 2007 can emit red light, and the light-emitting diodes of the second light-emitting diode strips 2008 can emit green light, and the third light-emitting diode strips 2009 Light-emitting diodes emit blue light.
  • the light-emitting diode strips 2007-2009 may also emit blue light, but the first and second light-emitting diode strips 2007 and 2008 cover different fluorescent structures (not shown), first and second. The blue light emitted by the two LED strips 2007 and 2008 is converted into red light and green light.
  • Each of the light emitting diodes has a vertical current conducting structure, and includes an epitaxial substrate 2301 to 2303 and a semiconductor epitaxial layer 2401 to 2403, a first metal electrode 2007A1 to 2009A3, and a second metal electrode 2007B. 2009B.
  • the epitaxial substrates 2301 to 2303 may include a sapphire substrate, a gallium nitride substrate, an aluminum nitride substrate, a gallium arsenide substrate, a gallium phosphide substrate, an indium phosphide substrate, a zinc oxide substrate, a silicon substrate, a silicon carbide substrate, and a semiconductor epitaxial layer.
  • the layers 2401 to 2403 may be, for example, a stacked structure of a P-pole semiconductor layer, a light-emitting layer, and an N-polar semiconductor layer, and are formed on the epitaxial substrates 2301 to 2303.
  • the first metal electrodes 2007A1 to 2009A3 are disposed on one side of the epitaxial substrates 2301 to 2303, and the second metal electrodes 2007B to 2009B are disposed on the other side of the epitaxial substrates 2301 to 2303 and facing the susceptor 2000, both of which are electrically Connected to the semiconductor epitaxial layers 2401 to 2403, current can flow perpendicularly from the first metal electrodes 2007A1 to 2009A3 to the second metal electrodes 2007B to 2009B.
  • the first metal electrodes 2007A1 to 2007A3 of the light emitting diodes may be independent, and the second metal electrodes 2007B may be the same user. .
  • the first traces 2004 to 2006 are disposed on the susceptor 2000, are arranged in parallel along the first direction 2100, and are electrically connected to the first metal electrodes 2007A1 to 2009A3, respectively. Specifically, the first traces 2004 are electrically connected to the first metal electrodes 2007A1, 2008A1, and 2009A1 in the same pixel 2024 through the plurality of wires 2011. The first traces 2005 are electrically connected to the same pixel 2025 through the plurality of wires 2012. The first metal electrodes 2007A2, 2008A2, and 2009A2 are electrically connected to the first metal electrodes 2007A3, 2008A3, and 2009A3 of the same pixel 2026 through a plurality of wires 2013.
  • the second traces 2001-2003 are disposed on the pedestal 2000, are arranged in parallel along the second direction 2200, and are electrically connected to the second metal electrodes 2007B-2009B, respectively.
  • the second traces 2001-2003 may be longer than the LED strips 2007-2009 in the first direction 2100, and may be connected by a gold ball connection, a metal link, an anisotropic conductive adhesive or a laser interface layer of an embodiment to be described later. It is electrically connected to the second metal electrodes 2007B to 2009B.
  • the LED strips 2007-2009 may be a flip chip structure, that is, the first metal electrodes 2007A-2007A and the second metal electrodes 2007B-2009B are located on the epitaxial substrate 2301. The same side of ⁇ 2303 faces the base 2000. Therefore, the first traces 2004 to 2006 can be electrically connected to the first metal electrodes 2007A to 2009A by means of a gold ball connection, a metal link, an anisotropic conductive adhesive connection, or a laser interface layer.
  • At least one of the LED strips 2007-2009 (taking the LED strip 2007 as an example), the first metal electrodes 2007A1 - 2007A3 are independent, and the second metal electrode 2007B can be The sharer (such as the 11D map) or the independent second metal electrodes 2007B1 to 2007B3 (Fig. 11C).
  • at least one of the LED strips 2007-2009 may include a dicing region 2500, which is a trench (through an etching process). Or formed by laser cutting or the like, the epitaxial substrate 2301 of each light emitting diode can be separated, and the semiconductor epitaxial layer 2401 can be further separated. A shielding layer may be formed and covered in the cutting zone 2500.
  • the LED strips 2007-2009 can be horizontal, that is, the first metal electrodes 2007A1 - 2007A3 and the second metal electrodes 2007B - 2009B are located on the epitaxial substrates 2301 - 2303. On the same side, but facing away from the base 2000.
  • the second line 2001-2003 can be used to call the line from 2017 to 2019.
  • the second metal electrodes 2007B to 2009B are connected, and the first wirings 2004 to 2006 can electrically connect the first metal electrodes 2007A1 to 2007A3 by bonding the wires 20011 to 2013 with the conductive metal strips 2014 to 2017.
  • the conductive metal strips 2014 are arranged in parallel along the first direction 2100, and are formed to extend along the second direction 2200 to contact the first metal electrodes 2007A1 to 2007A3, and the wires 2011 to 2013 are connected to the conductive metal strips 2014. One side. Referring to FIG. 12B, the wires 2011 to 2013 may be directly connected to the first metal electrodes 2007A1 to 2007A3.
  • the susceptor 2000 can include a first pedestal 2020 and a second pedestal 2000 , which are disposed in parallel, and the LED strips 2007-2009 are disposed in the two. between.
  • the first pedestal 2020 can be a light-transmissive substrate such as a glass substrate, so that light is not blocked.
  • the first traces 2021-2023 are disposed on the first pedestal 2020 and are made of a light-transmissive conductive material so as not to block light.
  • the light transmissive and electrically conductive material may include Indium Tin Oxide (ITO), indium zinc oxide (IZO), zinc oxide (Zinc Oxide, ZnO) or aluminum zinc oxide (Aluminum Zinc Oxide, AZO) and so on.
  • the LED strips 2007-2009 can be controlled by a scanning circuit 2601 and a data circuit 2602.
  • the scanning circuit 2601 and the LED strips 2007-2009 pass through a scanning trace (ie, a first trace) 2601- 1 to 2601-3 are electrically connected, and the data circuit 2602 and the LED strips 2007 to 2009 are electrically connected by a data trace (ie, a second trace) 2602-1 to 2602-3. Therefore, it is possible to control the light-emitting diodes on a specific address to generate light.
  • a plurality of LED strips are arranged in parallel to form a matrix display device or a light-emitting device, and each of the LED strips has a large length (the width is still a small level), so that the LED strips are easily transferred and Arranged on the base.
  • the light emitting device 100 includes a substrate 110 and a light emitting chip 120.
  • the material of the substrate 110 may include a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, and a glass substrate.
  • the circuit board or the flexible printed circuit board; the light emitting chip 120 can be an LED chip or a laser diode chip.
  • the light emitting chip 120 includes at least one electrode 121, and the substrate 110 includes a pad 111 facing and aligned.
  • the substrate 110 can correspond to the pedestal of the display device of the third preferred embodiment, and the pad 111 can correspond to the first trace or the second trace; the light-emitting chip 120 can correspond to the display device.
  • the light emitting diode strips, and the electrodes 121 can correspond to the metal electrodes.
  • the light-emitting chip 120 can be of a micro size, so that the electrode 121 and the pad 111 of the corresponding substrate 110 have a smaller size. Therefore, if the solder paste or the flux (Flux) is used to electrically connect the electrode 121 and the pad 111, the size of the solder paste or the flux may be too large, and the solder paste or the flux may not be easily controlled. In addition, when the flux passes through the reflow furnace (Reflow), it may swell to cause the light-emitting chip 120 to be lifted from the substrate 110.
  • the electrode 121 and the pad 111 are electrically connected through a (first) interface layer 130.
  • the interface layer 130 is formed between the electrode 121 and the pad 111 and is caused by a laser pulse 151, 152.
  • the laser pulses 151, 152 can be incident from the top of the light emitting chip 120 to the light emitting chip 120, and then focused to the electrode 121 (as shown in the figure) 15A) or pad 111 (Fig. 15B) causes energy to be transferred to electrode 121 and pad 111.
  • the electrode 121 and the pad 111 will be heated so that the junctions of the two are co-melted at a high temperature, thereby forming a eutectic layer, a modified layer or a solder layer to be electrically connected; at the high temperature co-fusion, the electrode 121 and The surface of the pad 111 has a non-smooth surface.
  • the laser pulse 151 has a wavelength ranging from 800 nm to 1100 nm, or 808 nm to 1064 nm, so that the energy of the laser pulse 151 is not absorbed by the epitaxial substrate or the epitaxial layer of the light emitting chip 120.
  • the laser pulse 151 may have a spot diameter of 10 um to 150 um, which is not larger than the size of the electrode 121 and the pad 111.
  • a laser pulse can be incident from the underside of the substrate 110 to the substrate 110 and then focused to the electrode 121 (as in FIG. 15A) or the pad 111 (FIG. 15B), causing energy to be transferred to the electrode 121 and the pad 111. To achieve laser welding results.
  • the light emitting device 200 also includes a light emitting chip 220 and a substrate 210.
  • the light emitting chip 220 includes an electrode 221, and the substrate 210 includes a pad 211.
  • the substrate 210 further includes at least a uniform hole 213 and at least one material 214.
  • the through hole 213 is disposed under the pad 211, extending from the lower surface of the substrate 210 to the lower surface, and the material 214 is disposed in the through hole 213.
  • the material 214 is a material having good electrical and thermal conductivity, and is in contact with the pad 211 to form an electrical and thermally conductive connection; the material 214 may also be referred to as a metal conductive post.
  • An interface layer 230 is formed between the electrode 221 and the pad 211, which is formed by laser pulses 153-155.
  • Laser pulses 153-155 are emitted from below the substrate 210 toward substrate 210 and may be focused on pads 211 (Fig. 16A), material 214 (Fig. 16B), or the lower surface of material 214 (Fig. 16C).
  • the energy of the laser pulses 153-155 is transmitted to the electrode 221 and the pad 211, so that the junction between the electrode 121 and the pad 111 is heated and co-melted at a high temperature to form a eutectic layer, a modified layer or a solder layer. Electrical connection.
  • the laser pulses 153 to 155 have a wavelength in the range of 300 nm to 1200 nm, and the laser pulses 153 to 155 have a spot diameter of 10 um to 150 um.
  • the laser pulses may be emitted from above the light emitting chip 220 toward the light emitting chip 220, and may be focused on pads 211 (eg, FIG. 16A), material 214 (as in FIG. 16B), or the lower surface of material 214 (eg, Fig. 16C) causes energy to be transferred to the electrode 221 and the pad 211 to achieve a laser welding effect.
  • the illuminating device 300 also includes a light emitting chip 320 and a substrate 310.
  • the light emitting chip 320 includes an electrode 321 and the substrate 310 includes a pad 311.
  • the illuminating device 300 further includes at least one colloid 331 disposed between the electrode 321 and the pad 311.
  • the material of the colloid 331 may include a flux, silver, tin or an anisotropic conductive film.
  • the laser pulses 351 and 352 can be incident on the light-emitting chip 320 from above the light-emitting chip 320, and are focused on the electrode 321, the pad 311 or the colloid 331, so that the junction between the colloid 311, the electrode 321 and the pad 311 is high-temperature communicative.
  • a (second) interface layer 330 is formed. In other words, an interface layer 330 is formed between the electrode 321 and the pad 311.
  • a laser pulse can be incident from the underside of the substrate 310 to the substrate 310, focusing on the electrode 321, the pad 311, or the colloid 331 to cause energy to be transferred to the colloid 331 to achieve a laser welding effect.
  • the light emitting device 400 also includes a light emitting chip 420 and a substrate 410.
  • the light emitting chip 420 includes an electrode 421, and the substrate 410 includes a pad 411, a through hole 413, and a material 414.
  • the light emitting device 400 further includes at least one colloid 431 disposed between the electrode 421 and the pad 411.
  • the laser pulses 353, 355 can be emitted from the lower surface of the light-emitting chip 420 toward the substrate 410, and focused on the pad 411 or the material 414, so that the junction between the colloid 431, the electrode 421 and the pad 411 is high-temperature communicative, forming an interface layer 430. .
  • an interface layer 430 is formed between the electrode 421 and the pad 411.
  • Laser pulses 353-355 are emitted from underneath substrate 410 toward substrate 410 and may be focused on pads 411 (Fig. 18A), material 414 (Fig. 18B), or the lower surface of material 414 (Fig. 18C).
  • the energy of the laser pulses 353-355 is transmitted to the colloid 431, so that the colloid 431 at the junction of the electrode 421 and the pad 411 is heated and co-melted at a high temperature, thereby forming a eutectic layer, a modified layer or a solder layer, thereby electrically connection.
  • the material of the colloid 431 may include a flux, silver, tin or an anisotropic conductive film.
  • the laser pulses may be emitted from above the light emitting chip 420 toward the light emitting chip 420, and may be focused on the pads 411 (as in Figure 18A), in the material 414 (as in Figure 18B), or on the lower surface of the material 414 (e.g. Fig. 18C) causes energy to be transferred to the colloid 431 to achieve a laser welding effect.
  • an interface layer is formed between the electrode of the light-emitting chip and the pad of the substrate by the laser pulse, which can effectively make the electrode and the pad electrically connected, especially for the miniaturized light-emitting chip.
  • the substrate selected for the light emitting diode may be a substrate made of spinel, silicon carbide (SiC) or sapphire.
  • the substrate may also be a ceramic substrate, which has electrical insulating properties and is composed of a ceramic material such as alumina, aluminum nitride, zirconium oxide and calcium fluoride.
  • the substrate may also include glass or polyimide to achieve a flexible material. However, any suitable insulating solder and flexible material can also be used.
  • each light-emitting diode of a small size can form a separate pixel.
  • Each of the light emitting diodes may have a rectangular or square shape having one side of 50 ⁇ m or less.
  • a display device using a square light emitting diode having one side of 10 ⁇ m as a separate pixel has sufficient brightness. Therefore, in a matrix having one side of 600 ⁇ m and the other side of 300 ⁇ m, the distance between the light emitting diodes is sufficient to realize a flexible display device.
  • a nitride semiconductor can be used as a light emitting diode.
  • These nitride semiconductors may include gallium nitride (GaN) (as a main element) and indium (In) and/or aluminum (Al) to realize a high power output light emitting diode that emits light of various colors including blue light.
  • the conductor lines are arranged above the light emitting diodes and electrically connected to the light emitting diodes.
  • the conductor lines are arranged between the light emitting diodes and electrically connected to the light emitting diodes.
  • the light emitting diodes are arranged in multiple rows, and each of the conductor lines can be arranged between the rows of light emitting diodes.
  • the distance between the light emitting diodes constituting the individual pixels is sufficiently long to allow each of the conductor lines to be arranged between the light emitting diodes.
  • the conductor line can be a strip electrode.
  • the metal conduction layer and the conductor lines may be arranged to be perpendicular to each other, respectively. Therefore, a matrix structure is formed.
  • the barrier wall can isolate individual pixels from each other and a reflective barrier wall can be used as the barrier wall.
  • the barrier wall may include a black insulating material or a white insulating material depending on the function of the display device.
  • a barrier wall comprising a white insulating material
  • the reflectance can be increased.
  • a barrier wall that includes black insulation Increase the contrast ratio while having reflectivity.
  • the barrier walls may be arranged between the vertical light emitting diodes and between the conductor lines. Therefore, a small-sized light-emitting diode can constitute a single pixel. Since the distance between the light emitting diodes is sufficiently long, the conductor lines are allowed to be arranged between the light emitting diodes. Therefore, a flexible display device can be realized.
  • the light emitting diode may be a blue semiconductor light emitting diode that emits blue (B) light
  • a fluorescent patch that converts blue (B) into a color of a pixel may be mounted on the light emitting diode.
  • the fluorescent patch may include red phosphor and green phosphor constituting individual pixels. That is, at the red pixel, a red phosphor which can convert blue (B) light into red (R) light can be formed on the blue semiconductor light emitting diode. At the green pixel, a green phosphor that can convert blue (B) light into green (G) light can be formed on the blue semiconductor light emitting diode.
  • a blue (B) light emitting diode can be formed separately.
  • red (R) pixels, green (G) pixels, and blue (B) pixels may constitute one pixel group.
  • the light emitting diodes may be white light emitting diodes each including yellow phosphor powder.
  • red phosphor powder, green phosphor powder, and blue phosphor powder may be disposed on the white light emitting diode to form a pixel.
  • a black matrix can be placed between the phosphors to increase the contrast ratio. In other words, the black matrix can improve the contrast.
  • the fluorescent patch comprises a phosphor powder, which is made of a material having high stable luminescent properties, such as garnet, (Sulfate), nitride (Nitrate), silicate (Silicate), Aluminate or any combination thereof, but not limited thereto, has a wavelength of about 300 nm to 700 nm.
  • the phosphor powder 141 has a particle diameter of 1 to 25 ⁇ m.
  • the method for preparing a fluorescent patch generally comprises the following steps: first, mixing the fluorescent powder into the transparent silica gel, and mixing the fluorescent powder with the silica gel by a homogenizer to form a colloid; then, spraying or wet coating The method of forming the gel of the previous step on the light-transmissive substrate to form a phosphor layer; then, pre-testing the phosphor layer to achieve the target color temperature, and then the phosphor The surface of the layer is coated with a transparent silica gel having a thickness of 50 to 200 ⁇ m, which is a fluorescent patch.
  • the LED pixel is a flip-chip LED
  • the carrier may be a Thin Film Transistor (TFT) circuit substrate
  • the TFT circuit substrate includes a plurality of scan lines (conductor lines) and a plurality of data lines (metal a conductive layer), each scan line (conductor line) is electrically connected to each column of light emitting diodes, and each data line (metal conduction layer) is electrically connected to each row of light emitting diodes, and each of the LED pixels further includes a TFT To control whether each LED emits light or not.
  • TFT Thin Film Transistor
  • the LED pixel further includes a P pole electrode and an N pole electrode for electrically connecting to the corresponding conductor line and the metal conduction layer, respectively, and the P pole electrode and the N pole electrode are respectively disposed on the P pole.
  • Semiconductor and N-pole semiconductors are respectively disposed on the P pole.
  • the LED pixel further includes a P pole electrode and an N pole electrode for respectively corresponding to The metal conduction layer and the conductor line are electrically connected, and the P pole electrode and the N pole electrode are respectively disposed on the P pole semiconductor and the N pole semiconductor.
  • the matrix application circuit of the LED display screen with the circuit design of the LED epitaxial wafer, so that a single wafer is a light-emitting diode matrix.
  • the light source emitted by the LED takes priority as UV light (including UVA, UVB, UVC) and short-wave blue light.
  • the LED pixels are controlled by means of column scanning, so that the individual LED pixels can have respective driving currents and lighting times, and the luminous intensity can be adjusted.
  • a fluorescent patch matrix containing RGB phosphor powder is attached to the LED matrix, and the LED pixels are used to excite the phosphor powder of the corresponding fluorescent patch pixel to form a full color display device.
  • the UVA wavelength is about 320 to 400 nm
  • the UVB wavelength is about 280 to 320 nm
  • the UVC wavelength is about 100 to 280 nm.
  • the organic dye is mixed with the photoresist, and the organic dye is directly coated on the LED chip with (A) in a photoresist pattern in combination with the yellow light lithography process, so that the RGB three-color light is formed and displayed.
  • Array (B) the organic dye is applied to the film material by a yellow light lithography process to form an RGB color filter and then bonded to a white LED forming array (C) directly into an R/G/B organic dye film material, and then used for cutting The method is then attached to the white light array chip to form an RGB array display.
  • Organic dyes have not been combined with the photoresist process before, combined with the photoresist process, can achieve a small, even micro-level matrix RGB colorful display mode.
  • RGB display array is formed on the minimized LED ( ⁇ 100um) chip.
  • the invention provides a matrix type display device, which comprises a matrix chip arrangement and a line arrangement, a Passivation isolation positive and negative line, a vertical matrix chip process, a horizontal matrix chip process, a fluorescent patch, and a single patch.
  • a matrix type display device which comprises a matrix chip arrangement and a line arrangement, a Passivation isolation positive and negative line, a vertical matrix chip process, a horizontal matrix chip process, a fluorescent patch, and a single patch.
  • the invention utilizes a non-contact laser eutectic process to directly focus on the metal electrode of the chip and the metal pad of the substrate to perform high temperature co-fusion, thereby completing the chip solid crystal process.
  • the chip chip size is smaller to the Micro LED.
  • the traditional eutectic flux or solder paste has too large particle size, or the amount of glue control.
  • the above Flux may also cause the plate to tilt and affect the subsequent LED. Packaging process.
  • the invention utilizes the laser bonding process to locally warm to avoid the warpage, and the laser focusing focus can be controlled to be similar to the size of the electrodes and the pads, and can directly be used for the metal infusion without the solder paste or the silver paste as the electrodes and the pads.
  • the pulsed laser directly penetrates the heating electrode or the pad from the chip vertically, and uses the pulsed laser long wavelength 808 ⁇ 1064nm, the laser is not absorbed by the chip GaN material, perpendicularly incident to the colloid between the chip electrode and the substrate pad, or no colloid, directly heated to allow the pad and the substrate metal to be infused.
  • the pulsed laser focuses on the substrate under the conductive pillar (the first material having conductivity and heat conduction), and uses a pulsed laser (wavelength of 300 to 1200 nm) to focus energy to the metal conduction post on the back surface of the substrate, and heats the metal surface of the substrate surface by thermal conduction.
  • the surface electrode of the chip produces a eutectic.
  • This embodiment can utilize a blue or UV light (including UVA, UVB, UVC) LED array with a wavelength conversion array (including a phosphor array, a dye array, a pigment array, or any combination thereof) to produce a full color display device or infrared Light-emitting array.
  • a blue or UV light including UVA, UVB, UVC
  • a wavelength conversion array including a phosphor array, a dye array, a pigment array, or any combination thereof
  • the light-emitting diode of this embodiment can utilize Molecular beam epitaxy after forming a multiple quantum well active layer (MQW active layer) by a metal organic chemical vapor deposition (MOCVD) process.
  • MQW active layer multiple quantum well active layer
  • MOCVD metal organic chemical vapor deposition
  • the MBE process forms a Tunnel Junction Layer to increase light extraction efficiency and component operation performance.

Abstract

A display device (10, 30), comprising a light-emitting diode matrix (12, 32) or a light-emitting diode bar (2007-2009) including a plurality of light-emitting diodes, wherein semiconductor layers of the plurality of light-emitting diodes are partially connected. The display device (10, 30) further comprises a phosphor matrix (11, 31), wherein same is arranged on the light-emitting diode matrix (12, 32) or the light-emitting diode bar (2007-2009) and comprises a plurality of phosphor pixels (11R, 11G, 11B, 31R, 31G, 31B), wherein the phosphor pixels (11R, 11G, 11B, 31R, 31G, 31B) may include a pigment or dye, and may be combined with a photoresist material. Furthermore, electrodes (121) of the light-emitting diodes may be electrically connected to a substrate (110) or a pad (111) on a base (2000) via a laser interface layer (130).

Description

显示装置Display device 技术领域Technical field
本发明涉及一种显示装置，尤其涉及一种应用发光二极管技术的显示装置。The present invention relates to a display device, and more particularly to a display device using the light emitting diode technology.
背景技术Background technique
发光二极管(LED)发展至今已有数十年，LED除了作为指示灯号、照明光源、户外大型显示看板等应用外，目前LED已朝向电子装置的显示器的应用发展。也就是，将微型化的LED芯片排列成一阵列，并使得一个或数个LED芯片作为一像素单元，藉此形成一显示器。这种显示器可称为微型LED显示器(Micro LED display)或称微型LED阵列(Micro LED array)。Light-emitting diodes (LEDs) have been developed for decades. In addition to LEDs, such as indicator lights, illumination sources, and outdoor large-scale display panels, LEDs have evolved toward the application of displays for electronic devices. That is, the miniaturized LED chips are arranged in an array, and one or several LED chips are used as a pixel unit, thereby forming a display. Such a display may be referred to as a micro LED display or a micro LED array.
然而，微型LED显示器发展上面临若干技术问题，举例而言，如何将制造完成的大量微型化LED芯片转移及排列到一装置基板上(即巨量转移的问题)；如何于微型化LED芯片上形成微型化萤光体，以产生特定的颜色；如何使LED芯片的电极与基板的接垫电性连接等。因此，若干业者针对这些技术问题投入研究、改善，以期增加微型LED显示器的商用性。However, the development of micro LED displays faces several technical problems. For example, how to transfer and arrange a large number of miniaturized LED chips that have been manufactured to a device substrate (ie, the problem of massive transfer); how to miniaturize LED chips Forming a miniaturized phosphor to produce a specific color; how to electrically connect the electrodes of the LED chip to the pads of the substrate. Therefore, several operators have invested in research and improvement on these technical issues in order to increase the commerciality of micro LED displays.
发明内容Summary of the invention
本发明的一目的在于提出一种显示装置，其可解决或改善LED的巨量移转及/或电性连接等问题。本发明的另一目的在于提出一种显示装置，其能使萤光体易于制作成微型化。It is an object of the present invention to provide a display device that solves or improves the problems of massive shifting and/or electrical connection of LEDs. Another object of the present invention is to provide a display device which can easily make a phosphor into a miniaturization.
为达上述目的，本发明的一实施例提出一发光二极管矩阵，包括多个发光二极管像素，该等发光二极管像素各包含一第一极性半导体层、一第二极性半导体及一量子井发光结构层，该量子井发光结构层设置于该第一及该第二极性半导体层之间，其中，沿着一列方向，该等发光二极管像素以一第一蚀刻沟槽相分隔，而沿着一行方向，该等发光二极管像素的该等第一极性半导体层以一第二蚀刻沟槽相分隔、该等第二极性半导体层相连接；一绝缘层，覆盖该第一蚀刻沟槽以及该第二蚀刻沟槽，并裸露出该等第一极性半导体层的上表面；多个金属导通层，沿着该行方向延伸形成，且分别电性连接该等发光二极管像素的该等第二极性半导体；多个导体线路，沿着该列方向延伸形成，且分别电性连接该等发光二极管像素的该等第一极性半导体；以及一萤光体矩阵，设置于该发光二极管矩阵上，包括多个萤光体像素，该等萤光体像素分别对应于该等发光二极管像素。To achieve the above objective, an embodiment of the present invention provides an LED array comprising a plurality of LED pixels, each of the LED pixels including a first polarity semiconductor layer, a second polarity semiconductor, and a quantum well illumination. a structural layer, the quantum well light emitting structure layer is disposed between the first and second polarity semiconductor layers, wherein the LED pixels are separated by a first etching trench along a column direction, and along In a row direction, the first polar semiconductor layers of the LED pixels are separated by a second etched trench, and the second polar semiconductor layers are connected; an insulating layer covering the first etched trench and The second etched trenches expose the upper surfaces of the first polar semiconductor layers; a plurality of metal conductive layers extending along the row direction, and electrically connecting the LED pixels respectively a second polarity semiconductor; a plurality of conductor lines extending along the column direction and electrically connecting the first polarity semiconductors of the LED pixels respectively; and a phosphor moment , Disposed on the light emitting diode matrix comprises a plurality of phosphor pixels, these phosphor pixels respectively corresponding to the light-emitting diode pixel.
为达上述目的，本发明的另一实施例提出一种显示装置，包括：一基座，具有相垂直的一第一方向及一第二方向；多个发光二极管条，被该基座承载，且各包含多个发光二极管，该等发光二极管各包含一磊晶基板及一半导体磊晶层、一第一金属电极及一第二金属电极，该半导体磊晶层设置于该磊晶基板上，该第一及该第二金属电极电性连接该半导体 磊晶层，其中，沿着该第二方向，该等发光二极管条相平行排列，而沿着该第一方向，该等发光二极管的该等第一极性半导体层相平行排列；多个第一走线，沿着该第一方向相平行排列，且分别电性连接该等发光二极管的该等第一金属电极；以及多个第二走线，沿着该第二方向相平行排列，且分别电性连接该等发光二极管的该等第二金属电极In order to achieve the above object, another embodiment of the present invention provides a display device including: a pedestal having a first direction and a second direction that are perpendicular to each other; and a plurality of LED strips carried by the pedestal. Each of the light emitting diodes includes an epitaxial substrate and a semiconductor epitaxial layer, a first metal electrode and a second metal electrode. The semiconductor epitaxial layer is disposed on the epitaxial substrate. The first and the second metal electrodes are electrically connected to the semiconductor An epitaxial layer, wherein the light emitting diode strips are arranged in parallel along the second direction, and the first polar semiconductor layers of the light emitting diodes are arranged in parallel along the first direction; a plurality of traces arranged in parallel along the first direction and electrically connected to the first metal electrodes of the light emitting diodes; and a plurality of second traces arranged in parallel along the second direction, and The second metal electrodes electrically connected to the light emitting diodes
另一方面，本发明提出一种微型矩阵式显示装置及其制造方法，其实施方式可包括：In another aspect, the present invention provides a micro-matrix display device and a method of fabricating the same, which may include:
1、一种微型矩阵式显示装置，包括：一发光二极管矩阵，具有一上表面及一下表面，该发光二极管矩阵包含多个发光二极管；各该发光二极管包含一P极半导体，以及一N极半导体，以及一量子井发光结构位于该P极半导体及该N极半导体之间，以及一非导电载体基板，以及一金属导通层位于该N极半导体及该非导电载体基板之间；多个第一蚀刻沟槽以及多个第二蚀刻沟槽，其中该第一蚀刻沟槽移除该P极半导体、以及该量子井发光结构、以及该N极半导体、以及该金属导通层，并且裸露出该非导电载体基板，其中该第二蚀刻沟槽移除该P极半导体、以及该量子井发光结构、以及部分该N极半导体，并且裸露出该N极半导体；一绝缘层覆盖于该第一蚀刻沟槽以及该第二蚀刻沟槽，并且裸露出该P极半导体；以及多个导体线路设置于该P极半导体以及绝缘层上；以及一萤光贴片矩阵，设置于该发光二极管矩阵的该上表面。A micro-matrix display device comprising: a light-emitting diode matrix having an upper surface and a lower surface, the light-emitting diode matrix comprising a plurality of light-emitting diodes; each of the light-emitting diodes comprising a P-pole semiconductor and an N-pole semiconductor And a quantum well light emitting structure between the P pole semiconductor and the N pole semiconductor, and a non-conductive carrier substrate, and a metal conduction layer between the N-pole semiconductor and the non-conductive carrier substrate; An etch trench and a plurality of second etch trenches, wherein the first etch trench removes the P-pole semiconductor, and the quantum well light-emitting structure, and the N-pole semiconductor, and the metal conductive layer, and are exposed The non-conductive carrier substrate, wherein the second etch trench removes the P-pole semiconductor, and the quantum well light-emitting structure, and a portion of the N-pole semiconductor, and exposes the N-pole semiconductor; an insulating layer covers the first Etching the trench and the second etch trench and exposing the P-pole semiconductor; and a plurality of conductor lines disposed on the P-pole semiconductor and the insulating layer; A fluorescent patch matrix is disposed on the upper surface of the matrix of the light emitting diodes.
2、如实施方式1所述的微型矩阵式显示装置，其中第一蚀刻沟槽与第二蚀刻沟槽彼此相互垂直，使该量子井发光结构形成矩阵式排列。2. The micro-matrix display device of embodiment 1, wherein the first etched trench and the second etched trench are perpendicular to each other such that the quantum well light emitting structure is formed in a matrix arrangement.
3、如实施方式1所述的微型矩阵式显示装置，其中萤光贴片矩阵包含多个红色、绿色、蓝色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成微型矩阵式显示装置。3. The micro-matrix display device of embodiment 1, wherein the fluorescent patch matrix comprises a plurality of red, green, and blue fluorescent patches, the light source emitted by the matrix of the light emitting diodes is excited and the fluorescent stickers are excited. A chip matrix forms a micro-matrix display device.
4、如实施方式1所述的微型矩阵式显示装置，其中萤光贴片矩阵设置位置与该导体线路位置一致。4. The micro-matrix display device of embodiment 1, wherein the position of the fluorescent patch matrix is the same as the position of the conductor line.
5、如实施方式1所述的微型矩阵式显示装置，其中量子井发光结构所发的波长包含蓝光或是紫外光(包含UVA、UVB、UVC)。5. The micro-matrix display device of embodiment 1, wherein the wavelength emitted by the quantum well light-emitting structure comprises blue light or ultraviolet light (including UVA, UVB, UVC).
6、如实施方式1所述的微型矩阵式显示装置，其中导体线路将各列P极半导体彼此并联。6. The micro-matrix display device according to embodiment 1, wherein the conductor lines connect the columns of P-pole semiconductors in parallel with each other.
7、如实施方式1所述的微型矩阵式显示装置，其中利用列扫描的方式控制发光二极管矩阵，使各独立LED可以具有各自的驱动电流及发光时间，即可调整发光强度。7. The micro-matrix display device according to the first embodiment, wherein the matrix of the light-emitting diodes is controlled by means of column scanning, so that the individual LEDs can have respective driving currents and light-emitting times, thereby adjusting the light-emitting intensity.
8、如实施方式1所述的非导电载体基板，例如氧化铝基板，陶瓷基板，高阻值硅基板等材料。8. The non-conductive carrier substrate according to the first embodiment, such as an alumina substrate, a ceramic substrate, or a high-resistance silicon substrate.
9、如实施方式1所述的微型矩阵式显示装置，其中绝缘层包括氧化硅(SiOX)、氮化硅(SiNX)、聚酰亚胺(Polyimide)、或其他高分子材料。9, as in Embodiment 1, the micro-matrix display device, wherein the insulating layer comprises silicon oxide (SiO X), silicon nitride (SiN X), polyimide (Polyimide), or other polymer materials.
10、如实施方式1所述的微型矩阵式显示装置，其中导体线路包括金、银、铜、铝、或是混合材料。 10. The micro-matrix display device of embodiment 1, wherein the conductor lines comprise gold, silver, copper, aluminum, or a hybrid material.
11、如实施方式1所述的微型矩阵式显示装置，其中金属导通层包括金、锡、或是混合材料。11. The micro-matrix display device of embodiment 1, wherein the metal conduction layer comprises gold, tin, or a mixed material.
12、一种微型矩阵式显示装置，包括：一发光二极管矩阵，具有一上表面及一下表面，该发光二极管矩阵包含多个发光二极管；各该发光二极管包含一P极半导体，以及一N极半导体，以及一量子井发光结构位于该P极半导体及该N极半导体之间，以及一非导电载体基板；多个第三蚀刻沟槽以及多个第四蚀刻沟槽，其中该第三蚀刻沟槽移除该P极半导体、以及该量子井发光结构、以及该N极半导体，并且裸露出该非导电载体基板，其中该第四蚀刻沟槽移除该P极半导体、以及该量子井发光结构、以及部分该N极半导体，并且裸露出该N极半导体；多个第二导体线路设置于该N极半导体；一绝缘层覆盖于该第三蚀刻沟槽以及该第四蚀刻沟槽以及该N极半导体，并且裸露出该P极半导体；及多个第三导体线路设置于该P极半导体以及绝缘层上；以及一萤光贴片矩阵，设置于该发光二极管矩阵的该上表面。12. A micro-matrix display device comprising: a light-emitting diode matrix having an upper surface and a lower surface, the light-emitting diode matrix comprising a plurality of light-emitting diodes; each of the light-emitting diodes comprising a P-pole semiconductor and an N-pole semiconductor And a quantum well light emitting structure between the P pole semiconductor and the N pole semiconductor, and a non-conductive carrier substrate; a plurality of third etching trenches and a plurality of fourth etching trenches, wherein the third etching trench Removing the P-pole semiconductor, and the quantum well light-emitting structure, and the N-pole semiconductor, and exposing the non-conductive carrier substrate, wherein the fourth etching trench removes the P-pole semiconductor, and the quantum well emitting structure, And a portion of the N-pole semiconductor, and exposing the N-pole semiconductor; a plurality of second conductor lines disposed on the N-pole semiconductor; an insulating layer covering the third etched trench and the fourth etched trench and the N-pole a semiconductor, and exposing the P-pole semiconductor; and a plurality of third conductor lines disposed on the P-pole semiconductor and the insulating layer; and a fluorescent patch matrix, disposed The upper surface of the light emitting diode matrix.
13、如实施方式12所述的微型矩阵式显示装置，其中第四蚀刻沟槽，使该量子井发光结构形成矩阵式排列。13. The micro-matrix display device of embodiment 12, wherein the fourth etched trenches form the quantum well light emitting structure in a matrix arrangement.
14、如实施方式1所述的微型矩阵式显示装置，其中萤光贴片矩阵包含多个红色、绿色、蓝色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成微型矩阵式显示装置。14. The micro-matrix display device of embodiment 1, wherein the fluorescent patch matrix comprises a plurality of red, green, and blue fluorescent patches, the light source emitted by the matrix of the light emitting diodes is excited and the fluorescent stickers are excited. A chip matrix forms a micro-matrix display device.
15、如实施方式12所述的微型矩阵式显示装置，其中萤光贴片矩阵设置位置与该第三导体线路位置一致。15. The micro-matrix display device of embodiment 12, wherein the fluorescent patch matrix setting position coincides with the third conductor line position.
16、如实施方式12所述的微型矩阵式显示装置，其中量子井发光结构所发的波长包含蓝光或是紫外光(包含UVA、UVB、UVC)。16. The micro-matrix display device of embodiment 12, wherein the wavelength emitted by the quantum well emitting structure comprises blue light or ultraviolet light (including UVA, UVB, UVC).
17、如实施方式12所述的微型矩阵式显示装置，其中导体线路将各列P极半导体彼此并联。17. The micro-matrix display device of embodiment 12, wherein the conductor lines connect the columns of P-pole semiconductors in parallel with each other.
18、如实施方式12所述的微型矩阵式显示装置，利用列扫描的方式控制发光二极管矩阵，使各独立LED可以具有各自的驱动电流及发光时间，即可调整发光强度。18. The micro-matrix display device according to the twelfth embodiment, wherein the matrix of the light-emitting diodes is controlled by column scanning so that the individual LEDs can have respective driving currents and light-emitting times, thereby adjusting the light-emitting intensity.
19、如实施方式12所述的微型矩阵式显示装置，其中非导电载体基板包括氧化铝基板，高阻值硅基板等材料。19. The micro-matrix display device of embodiment 12, wherein the non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
20、如实施方式12所述的微型矩阵式显示装置，其中绝缘层包括氧化硅(SiOX)、氮化硅(SiNX)、聚酰亚胺(Polyimide)、或其他高分子材料。20, as described in embodiment 12 according to micro-matrix display device, wherein the insulating layer comprises silicon oxide (SiO X), silicon nitride (SiN X), polyimide (Polyimide), or other polymer materials.
21、如实施方式12所述的微型矩阵式显示装置，其中导体线路包括金、银、铜、铝、或是混合材料。21. The micro-matrix display device of embodiment 12, wherein the conductor lines comprise gold, silver, copper, aluminum, or a hybrid material.
22、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个发光二极管像素，各该发光二极管像素包括：一第一极性半导体及一第二极性半导体；一量子井发光结构，设置于该第一极性半导体及该第二极性半导体之间；多条金属导通层，各条金属导通层电 性连接于每一行位置上该些发光二极管的该些第一极性半导体；及多条导体线路，相对该些金属导通层垂直设置，各条导体线路电性连接于每一列位置上该些发光二极管的该些第二极性半导体；以及一萤光贴片矩阵，包括多个萤光贴片像素，每一萤光贴片像素对应于一发光二极管像素。22. A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels, each of the light-emitting diode pixels comprising: a first polarity semiconductor and a second polarity semiconductor; and a quantum well light emitting structure Between the first polarity semiconductor and the second polarity semiconductor; a plurality of metal conduction layers, each of the metal conduction layers The first polarity semiconductors of the LEDs are connected to each of the LEDs; and the plurality of conductor lines are disposed perpendicular to the metal conduction layers, and the conductor lines are electrically connected to each of the column positions. The second polarity semiconductors of the light emitting diodes; and a fluorescent patch matrix comprising a plurality of fluorescent patch pixels, each of the fluorescent patch pixels corresponding to a light emitting diode pixel.
23、如实施方式22所述的微型矩阵式显示装置，其中萤光贴片矩阵包含多个红色、绿色、蓝色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成全彩矩阵式显示装置。The micro-matrix display device of embodiment 22, wherein the fluorescent patch matrix comprises a plurality of red, green, and blue fluorescent patches, the light source emitted by the matrix of the light emitting diodes is used to excite the fluorescent stickers The slice matrix forms a full color matrix display device.
24、如实施方式22所述的微型矩阵式显示装置，其中量子井发光结构所发的波长包含蓝光或是紫外光(包含UVA、UVB、UVC)。24. The micro-matrix display device of embodiment 22, wherein the wavelength emitted by the quantum well illumination structure comprises blue light or ultraviolet light (including UVA, UVB, UVC).
25、如实施方式22所述的微型矩阵式显示装置，利用该些导体线路的列扫描的方式控制该发光二极管矩阵，使各发光二极管像素可以具有各自的驱动电流及发光时间，即可调整发光强度。25. The micro-matrix display device according to the 22nd aspect, wherein the light-emitting diode matrix is controlled by column scanning of the conductor lines, so that each of the LED pixels can have respective driving currents and light-emitting times, thereby adjusting the light emission. strength.
26、如实施方式22所述的微型矩阵式显示装置，其中该些导体线路包括金、银、铜、铝、或是混合材料。26. The micro-matrix display device of embodiment 22, wherein the conductor lines comprise gold, silver, copper, aluminum, or a hybrid material.
27、如实施方式22所述的微型矩阵式显示装置，还包括一非导电载体基板，用以承载该发光二极管矩阵。The micro-matrix display device of embodiment 22, further comprising a non-conductive carrier substrate for carrying the matrix of the light-emitting diodes.
28、如实施方式27所述的微型矩阵式显示装置，其中非导电载体基板包括氧化铝基板，高阻值硅基板等材料。The micro-matrix display device according to embodiment 27, wherein the non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
29、如实施方式22所述的微型矩阵式显示装置，还包括一绝缘层，设置于该些发光二极管像素之间。The micro-matrix display device of embodiment 22, further comprising an insulating layer disposed between the LED pixels.
30、如实施方式29所述的微型矩阵式显示装置，其中该绝缘层包括氧化硅(SiOX)、氮化硅(SiNX)、聚酰亚胺(Polyimide)、或其他高分子材料。30, 29 according to the embodiment as micro-matrix type display device, wherein the insulating layer comprises silicon oxide (SiO X), silicon nitride (SiN X), polyimide (Polyimide), or other polymer materials.
31、如实施方式22所述的微型矩阵式显示装置，其中该萤光贴片矩阵包含多个红色、绿色、黄色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成全彩矩阵式显示装置。The micro-matrix display device of embodiment 22, wherein the fluorescent patch matrix comprises a plurality of red, green, and yellow fluorescent patches, the light source emitted by the matrix of the light emitting diodes is used to excite the fluorescent stickers The slice matrix forms a full color matrix display device.
32、如实施方式22所述的微型矩阵式显示装置，其中该萤光贴片矩阵包含多个红色、绿色、蓝色、黄色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成全彩矩阵式显示装置。32. The micro-matrix display device of embodiment 22, wherein the fluorescent patch matrix comprises a plurality of red, green, blue, and yellow fluorescent patches, the light source emitted by the light emitting diode matrix is used to excite the light source A fluorescent patch matrix forms a full color matrix display device.
33、如实施方式22所述的微型矩阵式显示装置，其中该萤光贴片矩阵包含多个红色、绿色、黄色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成全彩矩阵式显示装置。The micro-matrix display device of embodiment 22, wherein the fluorescent patch matrix comprises a plurality of red, green, and yellow fluorescent patches, the light source emitted by the matrix of the light emitting diodes is used to excite the fluorescent stickers The slice matrix forms a full color matrix display device.
34、如实施方式22所述的微型矩阵式显示装置，其中该些发光二极管像素包括氮化物。34. The micro-matrix display device of embodiment 22, wherein the light emitting diode pixels comprise a nitride.
35、如实施方式22所述的微型矩阵式显示装置，其中第一极性半导体及第二极性半 导体分别为N极半导体及P极半导体。35. The micro-matrix display device of embodiment 22, wherein the first polar semiconductor and the second polar half The conductors are an N-pole semiconductor and a P-pole semiconductor, respectively.
36、如实施方式22所述的微型矩阵式显示装置，其中第一极性半导体及第二极性半导体分别为P极半导体及N极半导体。The micro-matrix display device according to the 22nd aspect, wherein the first polarity semiconductor and the second polarity semiconductor are a P-pole semiconductor and an N-pole semiconductor, respectively.
37、如实施方式22所述的微型矩阵式显示装置，其中该些发光二极管像素可以是垂直式发光二极管结构。The micro-matrix display device of embodiment 22, wherein the light-emitting diode pixels are vertical LED structures.
38、如实施方式22所述的微型矩阵式显示装置，其中该些发光二极管像素可以是水水平式发光二极管结构。38. The micro-matrix display device of embodiment 22, wherein the light-emitting diode pixels are water horizontal light-emitting diode structures.
39、如实施方式22所述的微型矩阵式显示装置，其中该些发光二极管像素可以是覆晶式(Flip Chip)发光二极管结构。39. The micro-matrix display device of embodiment 22, wherein the light-emitting diode pixels are a flip-chip light-emitting diode structure.
40、如实施方式22所述的微型矩阵式显示装置，还包括一屏蔽层，设置于该些发光二极管像素之间。40. The micro-matrix display device of embodiment 22, further comprising a shielding layer disposed between the LED pixels.
41、如实施方式22所述的微型矩阵式显示装置，还包括一屏蔽层，设置于该些萤光贴片像素之间。The micro-matrix display device of embodiment 22, further comprising a shielding layer disposed between the fluorescent patch pixels.
42、如实施方式22所述的微型矩阵式显示装置，其中该些萤光贴片像素包括萤光粉。42. The micro-matrix display device of embodiment 22, wherein the phosphor patch pixels comprise phosphor powder.
43、如实施方式22所述的微型矩阵式显示装置，其中该些导通线路可以是透明材料。43. The micro-matrix display device of embodiment 22, wherein the conductive lines are transparent materials.
44、如实施方式43所述的微型矩阵式显示装置，其中透明材料可以是铟锡氧化物(Indium Tin Oxide；ITO)、铟锌氧化物(indium zinc oxide，IZO)、氧化锌(Zinc Oxide，ZnO)或氧化锌铝(Aluminum Zinc Oxide，AZO)。The micro-matrix display device according to Embodiment 43, wherein the transparent material may be Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Zinc Oxide (Zinc Oxide, ZnO) or aluminum oxide zinc (Aluminium Zinc Oxide, AZO).
45、如实施方式22所述的微型矩阵式显示装置，其中该些导通线路设置于该些发光二极管像素之间。The micro-matrix display device of embodiment 22, wherein the conductive lines are disposed between the light-emitting diode pixels.
46、如实施方式22所述的微型矩阵式显示装置，其中该些导通线路设置于该些发光二极管像素上。The micro-matrix display device of embodiment 22, wherein the conductive lines are disposed on the light-emitting diode pixels.
47、如实施方式22所述的微型矩阵式显示装置，其中该些导通线路可以是扫描线。47. The micro-matrix display device of embodiment 22, wherein the conductive lines are scan lines.
48、如实施方式22所述的微型矩阵式显示装置，其中该些金属导通层可以是数据线。48. The micro-matrix display device of embodiment 22, wherein the metal conduction layers are data lines.
49、如实施方式22所述的微型矩阵式显示装置，还包括一扫描控制电路，电性连接于该些导通线路。49. The micro-matrix display device of embodiment 22, further comprising a scan control circuit electrically connected to the conductive lines.
50、如实施方式22所述的微型矩阵式显示装置，还包括一数据控制电路，电性连接于该些金属导通层。The micro-matrix display device of embodiment 22, further comprising a data control circuit electrically connected to the metal conduction layers.
51、如实施方式22所述的微型矩阵式显示装置，还包括一透镜矩阵，具有多个透镜像素，各该透镜像素对应于一萤光贴片像素。51. The micro-matrix display device of embodiment 22, further comprising a lens matrix having a plurality of lens pixels, each of the lens pixels corresponding to a fluorescent patch pixel.
52、如实施方式22所述的微型矩阵式显示装置，还包括一透镜矩阵，其中该萤光贴片矩阵设置于该透镜矩阵及该发光二极管矩阵之间。The micro-matrix display device of embodiment 22, further comprising a lens matrix, wherein the fluorescent patch matrix is disposed between the lens matrix and the light-emitting diode matrix.
53、一种微型矩阵式显示装置的制造方法，包括：提供一发光二极管矩阵，该发光二极管矩阵包括多个发光二极管像素，各该发光二极管像素包括：一第一极性半导体及一第 二极性半导体；一量子井发光结构，设置于该第一极性半导体及该第二极性半导体之间；多条金属导通层，各条金属导通层电性连接于每一行位置上该些发光二极管的该些第一极性半导体；及多条导体线路，相对该些金属导通层垂直设置，各条导体线路电性连接于每一列位置上该些发光二极管的该些第二极性半导体；以及提供一萤光贴片矩阵，相对于该发光二极管矩阵设置，该萤光贴片矩阵包括多个萤光贴片像素，每一萤光贴片像素对应于一发光二极管像素。53. A method of fabricating a micro-matrix display device, comprising: providing a matrix of light-emitting diodes, the matrix of light-emitting diodes comprising a plurality of light-emitting diode pixels, each of the light-emitting diode pixels comprising: a first polarity semiconductor and a first a bipolar semiconductor; a quantum well light emitting structure disposed between the first polar semiconductor and the second polar semiconductor; a plurality of metal conducting layers, each of the metal conducting layers electrically connected to each row The first polarity semiconductors of the LEDs and the plurality of conductor lines are disposed perpendicular to the metal conduction layers, and each of the conductor lines is electrically connected to the second of the LEDs at each column position And a fluorescent chip matrix, wherein the fluorescent patch matrix comprises a plurality of fluorescent patch pixels, each of the fluorescent patch pixels corresponding to a light emitting diode pixel.
54、如实施方式53所述的微型矩阵式显示装置的制造方法，其中萤光贴片矩阵包含多个红色、绿色、蓝色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成全彩矩阵式显示装置。54. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the fluorescent patch matrix comprises a plurality of red, green, and blue fluorescent patches, the light source emitted by the light emitting diode matrix is used to excite the light source A fluorescent patch matrix forms a full color matrix display device.
55、如实施方式53所述的微型矩阵式显示装置的制造方法，其中量子井发光结构所发的波长包含蓝光或是紫外光(包含UVA、UVB、UVC)。55. The method of manufacturing a micro-matrix display device according to embodiment 53, wherein the wavelength emitted by the quantum well light-emitting structure comprises blue light or ultraviolet light (including UVA, UVB, UVC).
56、如实施方式53所述的微型矩阵式显示装置的制造方法，利用该些导体线路的列扫描的方式控制该发光二极管矩阵，使各发光二极管像素可以具有各自的驱动电流及发光时间，即可调整发光强度。56. The method of manufacturing a micro-matrix display device according to claim 53, wherein the light-emitting diode matrix is controlled by column scanning of the conductor lines, so that each of the light-emitting diode pixels can have a respective driving current and a light-emitting time, that is, The luminous intensity can be adjusted.
57、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些导体线路包括金、银、铜、铝、或是混合材料。57. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the conductor lines comprise gold, silver, copper, aluminum, or a mixed material.
58、如实施方式53所述的微型矩阵式显示装置的制造方法，还包括一非导电载体基板，用以承载该发光二极管矩阵。58. The method of fabricating a micro-matrix display device according to embodiment 53, further comprising a non-conductive carrier substrate for carrying the matrix of the light-emitting diodes.
59、如实施方式58所述的微型矩阵式显示装置的制造方法，其中非导电载体基板包括氧化铝基板，高阻值硅基板等材料。The method of manufacturing a micro-matrix display device according to embodiment 58, wherein the non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
60、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该发光二极管矩阵还包括一绝缘层，设置于该些发光二极管像素之间。The method of manufacturing a micro-matrix display device according to the embodiment 53, wherein the light-emitting diode matrix further comprises an insulating layer disposed between the light-emitting diode pixels.
61、如实施方式60所述的微型矩阵式显示装置的制造方法，其中该绝缘层包括氧化硅(SiOX)、氮化硅(SiNX)、聚酰亚胺(Polyimide)、或其他高分子材料。The method of manufacturing a micro-matrix display device according to claim 60, wherein the insulating layer comprises silicon oxide (SiO X ), silicon nitride (SiN X ), polyimide (Polyimide), or other polymer. material.
62、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该萤光贴片矩阵包含多个红色、绿色、黄色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成全彩矩阵式显示装置。62. The method of manufacturing a micro-matrix display device according to embodiment 53, wherein the fluorescent patch matrix comprises a plurality of red, green, and yellow fluorescent patches, and the light source emitted by the light emitting diode matrix is used to excite the light source A fluorescent patch matrix forms a full color matrix display device.
63、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该萤光贴片矩阵包含多个红色、绿色、蓝色、黄色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成全彩矩阵式显示装置。The method of manufacturing a micro-matrix display device according to the embodiment 53, wherein the fluorescent patch matrix comprises a plurality of red, green, blue, and yellow fluorescent patches, and the light source emitted by the light emitting diode matrix And exciting the fluorescent patch matrix to form a full color matrix display device.
64、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该萤光贴片矩阵包含多个红色、绿色、黄色萤光贴片，通过该发光二极管矩阵所发出的光源并且激发该萤光贴片矩阵，形成全彩矩阵式显示装置。64. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the fluorescent patch matrix comprises a plurality of red, green, and yellow fluorescent patches, the light source emitted by the light emitting diode matrix is used to excite the light source A fluorescent patch matrix forms a full color matrix display device.
65、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些发光二极管像 素包括氮化物。65. The method of manufacturing a micro-matrix display device according to Embodiment 53, wherein the LED images The inclusions include nitrides.
66、如实施方式53所述的微型矩阵式显示装置的制造方法，其中第一极性半导体及第二极性半导体分别为N极半导体及P极半导体。The method of manufacturing a micro-matrix display device according to claim 53, wherein the first polar semiconductor and the second polar semiconductor are an N-pole semiconductor and a P-pole semiconductor, respectively.
67、如实施方式53所述的微型矩阵式显示装置的制造方法，其中第一极性半导体及第二极性半导体分别为P极半导体及N极半导体。67. The method of manufacturing a micro-matrix display device according to claim 53, wherein the first polarity semiconductor and the second polarity semiconductor are a P-pole semiconductor and an N-pole semiconductor, respectively.
68、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些发光二极管像素可以是垂直式发光二极管结构。68. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the light-emitting diode pixels are vertical LED structures.
69、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些发光二极管像素可以是水水平式发光二极管结构。69. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the light-emitting diode pixels are water level light-emitting diode structures.
70、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些发光二极管像素可以是覆晶式发光二极管结构。The method of manufacturing a micro-matrix display device according to any of the preceding claims, wherein the light-emitting diode pixels are a flip-chip light-emitting diode structure.
71、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该发光二极管矩阵还包括一屏蔽层，设置于该些发光二极管像素之间。The method of manufacturing the micro-matrix display device of the embodiment of the present invention, wherein the LED matrix further comprises a shielding layer disposed between the LED pixels.
72、如实施方式53所述的微型矩阵式显示装置的制造方法，还包括该萤光贴片矩阵还包括一屏蔽层，设置于该些萤光贴片像素之间。The method of manufacturing the micro-matrix display device of the embodiment 53, further comprising the shielding chip matrix further comprising a shielding layer disposed between the fluorescent patch pixels.
73、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些萤光贴片像素包括萤光粉。73. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the fluorescent patch pixels comprise phosphor powder.
74、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些导通线路可以是透明材料。74. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the conductive lines are transparent materials.
75、如实施方式74所述的微型矩阵式显示装置的制造方法，其中透明材料可以是铟锡氧化物(Indium Tin Oxide；ITO)、铟锌氧化物(indium zinc oxide，IZO)、氧化锌(Zinc Oxide，ZnO)或氧化锌铝(Aluminum Zinc Oxide，AZO)。75. The method of manufacturing a micro-matrix display device according to Embodiment 74, wherein the transparent material may be Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or Zinc Oxide ( Zinc Oxide, ZnO) or Aluminum Zinc Oxide (AZO).
76、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些导通线路设置于该些发光二极管像素之间。76. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the conductive lines are disposed between the light-emitting diode pixels.
77、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些导通线路设置于该些发光二极管像素上。77. The method of fabricating a micro-matrix display device according to claim 53, wherein the conductive lines are disposed on the light-emitting diode pixels.
78、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些导通线路可以是扫描线。78. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the conductive lines are scan lines.
79、如实施方式53所述的微型矩阵式显示装置的制造方法，其中该些金属导通层可以是数据线。79. The method of fabricating a micro-matrix display device according to embodiment 53, wherein the metal conduction layers are data lines.
80、如实施方式53所述的微型矩阵式显示装置的制造方法，还包括提供一扫描控制电路，电性连接于该些导通线路。80. The method of fabricating a micro-matrix display device according to embodiment 53, further comprising providing a scan control circuit electrically connected to the conductive lines.
81、如实施方式53所述的微型矩阵式显示装置的制造方法，还包括提供一数据控制电路，电性连接于该些金属导通层。 81. The method of fabricating a micro-matrix display device according to embodiment 53, further comprising providing a data control circuit electrically connected to the metal conduction layers.
82、如实施方式53所述的微型矩阵式显示装置的制造方法，还包括提供一透镜矩阵，具有多个透镜像素，各该透镜像素对应于一萤光贴片像素。82. The method of fabricating a micro-matrix display device according to embodiment 53, further comprising providing a lens matrix having a plurality of lens pixels, each of the lens pixels corresponding to a fluorescent patch pixel.
83、如实施方式53所述的微型矩阵式显示装置的制造方法，还包括提供一透镜矩阵，其中该萤光贴片矩阵设置于该透镜矩阵及该发光二极管矩阵之间。83. The method of fabricating a micro-matrix display device according to embodiment 53, further comprising providing a lens matrix, wherein the fluorescent patch matrix is disposed between the lens matrix and the light-emitting diode matrix.
再一方面，本发明提出一种微型矩阵式显示装置及其制造方法，其实施方式可包括：In another aspect, the present invention provides a micro-matrix display device and a method of fabricating the same, which may include:
1、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个发光二极管像素；以及一萤光体矩阵，包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素；其中该萤光体矩阵包括一第一萤光体，该第一萤光体包括红色染料、或红色颜料、或红色有机染料、或红色有机颜料、或红色无机染料、或红色无机颜料；通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode a pixel; wherein the phosphor matrix comprises a first phosphor comprising a red dye, or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; A full color matrix display device is formed by the light source emitted by the matrix of the light emitting diodes and exciting the matrix of the phosphor.
2、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个发光二极管像素；一萤光体矩阵，包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素；以及其中该萤光体矩阵包括一第二萤光体，该第二萤光体包括绿色染料、或绿色颜料、或绿色有机染料、或绿色有机颜料、或绿色无机染料、或绿色无机颜料；以及通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode pixel And wherein the phosphor matrix comprises a second phosphor comprising a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; And a light source emitted by the matrix of the light emitting diodes and exciting the matrix of the phosphor to form a full color matrix display device.
3、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个发光二极管像素；以及一萤光体矩阵，包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素；其中该萤光体矩阵包括一第一萤光体以及一第二萤光体；其中该第一萤光体包括红色染料、或红色颜料、或红色有机染料、或红色有机颜料、或红色无机染料、或红色无机颜料；其中该第二萤光体包括绿色染料、或绿色颜料、或绿色有机染料、或绿色有机颜料、或绿色无机染料、或绿色无机颜料；通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode a pixel; wherein the phosphor matrix comprises a first phosphor and a second phosphor; wherein the first phosphor comprises a red dye, or a red pigment, or a red organic dye, or a red organic pigment, or a red An inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; emitted by the light emitting diode matrix The light source and the matrix of the phosphor are excited to form a full color matrix display device.
4、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个发光二极管像素；以及一萤光体矩阵，包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素；其中该萤光体矩阵包括一第一萤光体、一第二萤光体以及一第三萤光体；其中该第一萤光体包括红色染料、或红色颜料、或红色有机染料、或红色有机颜料、或红色无机染料、或红色无机颜料；其中该第二萤光体包括绿色染料、或绿色颜料、或绿色有机染料、或绿色有机颜料、或绿色无机染料、或绿色无机颜料；其中该第三萤光体包括黄色染料、或黄色颜料、或黄色有机染料、或黄色有机颜料、或黄色无机染料、或黄色无机颜料、或黄色萤光粉、或蓝色染料、或蓝色颜料、或蓝色有机染料、或蓝色有机颜料、或蓝色无机染料、或蓝色无机颜料；通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode a pixel; wherein the phosphor matrix comprises a first phosphor, a second phosphor, and a third phosphor; wherein the first phosphor comprises a red dye, or a red pigment, or a red organic dye, Or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; Wherein the third phosphor comprises a yellow dye, or a yellow pigment, or a yellow organic dye, or a yellow organic pigment, or a yellow inorganic dye, or a yellow inorganic pigment, or a yellow phosphor, or a blue dye, or a blue pigment Or a blue organic dye, or a blue organic pigment, or a blue inorganic dye, or a blue inorganic pigment; a light source emitted through the matrix of the light emitting diode And exciting the phosphor matrix to form a full color matrix display device.
5、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个发光二极管像素；一萤光体矩阵，包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素；其中该 萤光体矩阵包括一第一萤光体、一第二萤光体；其中该第一萤光体包括红色染料、或红色颜料、或红色有机染料、或红色有机颜料、或红色无机染料、或红色无机颜料；其中该第二萤光体包括绿色染料、或绿色颜料、或绿色有机染料、或绿色有机颜料、或绿色无机染料、或绿色无机颜料；以及一透光部矩阵，包括多个透光部，每一透光部对应于一发光二极管像素；以及通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of light-emitting diode pixels; a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting diode pixel Where The phosphor matrix includes a first phosphor, a second phosphor; wherein the first phosphor comprises a red dye, or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; and a light transmissive matrix comprising a plurality of transparent The light portion, each of the light transmitting portions corresponds to a light emitting diode pixel; and the light source emitted by the light emitting diode matrix and the matrix of the phosphor is excited to form a full color matrix display device.
6、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该萤光体矩阵设置于一基板上方，再与该发光二极管阵列结合，形成全彩矩阵式显示装置。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is disposed above a substrate and combined with the LED array to form a full-color matrix display device.
7、如实施方式6所述的微型矩阵式显示装置，其中该基板包含玻璃基板、塑胶基板、柔性基板、蓝宝石基板。7. The micro-matrix display device according to embodiment 6, wherein the substrate comprises a glass substrate, a plastic substrate, a flexible substrate, and a sapphire substrate.
8、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该萤光体矩阵通过多次曝光显影具有光致抗蚀剂功能的萤光体所形成。8. The micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is formed by developing a phosphor having a photoresist function by multiple exposure.
9、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该萤光体矩阵通过多次蚀刻萤光体所形成。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is formed by etching the phosphor a plurality of times.
10、如实施方式1～5所述的微型矩阵式显示装置，其中该萤光体矩阵通过激光切割后再与该发光二极管阵列结合，形成全彩矩阵式显示装置。10. The micro-matrix display device according to any one of claims 1 to 5, wherein the phosphor matrix is laser-cut and then combined with the LED array to form a full-color matrix display device.
11、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该萤光体矩阵通过喷涂具有光致抗蚀剂功能的萤光体于该发光二极管矩阵的上方，再通过多次曝光显影形成该形成全彩矩阵式显示装置。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is sprayed on the light-emitting diode matrix by spraying a phosphor having a photoresist function. Sub-exposure development forms the full color matrix display device.
12、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该萤光体矩阵通过喷涂萤光体于该发光二极管矩阵的上方，再通过多次蚀刻形成该形成全彩矩阵式显示装置。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor matrix is formed by spraying a phosphor over the matrix of the LED, and forming the full-color matrix by etching a plurality of times. Display device.
13、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该发光二极管矩阵所发的波长包含蓝光或是紫外光(包含UVA、UVB、UVC)。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the wavelength of the light-emitting diode matrix comprises blue light or ultraviolet light (including UVA, UVB, UVC).
14、如实施方式1～5的任一所述的微型矩阵式显示装置，还包括多导体线路的列扫描的方式控制该发光二极管矩阵，使各发光二极管像素可以具有各自的驱动电流及发光时间，即可调整发光强度。The micro-matrix display device according to any one of Embodiments 1 to 5, further comprising a column scanning method of the multi-conductor line to control the LED matrix, so that each LED pixel can have a respective driving current and a lighting time. , you can adjust the luminous intensity.
15、如实施方式14所述的微型矩阵式显示装置，其中该些导体线路包括金、银、铜、铝、或是混合材料。15. The micro-matrix display device of embodiment 14, wherein the conductor lines comprise gold, silver, copper, aluminum, or a hybrid material.
16、如实施方式1～5的任一所述的微型矩阵式显示装置，还包括一非导电载体基板，用以承载该发光二极管矩阵。The micro-matrix display device of any one of embodiments 1 to 5, further comprising a non-conductive carrier substrate for carrying the matrix of the light-emitting diodes.
17、如实施方式16所述的微型矩阵式显示装置，其中非导电载体基板包括氧化铝基板，高阻值硅基板等材料。17. The micro-matrix display device of embodiment 16, wherein the non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
18、如实施方式1～5的任一所述的微型矩阵式显示装置，还包括一绝缘层，设置于该些发光二极管像素之间。 The micro-matrix display device according to any one of the first to fifth aspects, further comprising an insulating layer disposed between the light-emitting diode pixels.
19、如实施方式18的任一所述的微型矩阵式显示装置，其中该绝缘层包括氧化硅(SiOX)、氮化硅(SiNX)、聚酰亚胺(Polyimide)、或其他高分子材料。The micro-matrix display device according to any one of the 18th aspect, wherein the insulating layer comprises silicon oxide (SiO x ), silicon nitride (SiN X ), polyimide (Polyimide), or other polymer. material.
20、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该些发光二极管像素包括氮化物。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the light-emitting diode pixels comprise a nitride.
21、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该些发光二极管像素可以是垂直式发光二极管结构。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the light-emitting diode pixels are vertical LED structures.
22、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该些发光二极管像素可以是水平式发光二极管结构。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the light-emitting diode pixels are horizontal LED structures.
23、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该些发光二极管像素可以是覆晶式发光二极管结构。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the light-emitting diode pixels are of a flip-chip type light-emitting diode structure.
24、如实施方式1～5的任一所述的微型矩阵式显示装置，还包括一屏蔽层，设置于该些发光二极管像素之间。The micro-matrix display device according to any one of the first to fifth aspects, further comprising a shielding layer disposed between the LED pixels.
25、如实施方式1～5的任一所述的微型矩阵式显示装置，还包括一屏蔽层，设置于该些萤光体像素之间。The micro-matrix display device according to any one of embodiments 1 to 5, further comprising a shielding layer disposed between the phosphor pixels.
26、如实施方式1～5的任一所述的微型矩阵式显示装置，其中该些萤光体像素包括萤光粉。The micro-matrix display device according to any one of embodiments 1 to 5, wherein the phosphor pixels comprise phosphor powder.
27、如实施方式1～5的任一所述的微型矩阵式显示装置，还包含多透明导通线路。The micromatrix display device according to any one of the first to fifth aspects, further comprising a multi-transparent conduction line.
28、如实施方式27所述的微型矩阵式显示装置，其中该多透明导通线路材料可以是铟锡氧化物(Indium Tin Oxide；ITO)、铟锌氧化物(indium zinc oxide，IZO)、氧化锌(Zinc Oxide，ZnO)或氧化锌铝(Aluminum Zinc Oxide，AZO)。The micro-matrix display device according to the embodiment 27, wherein the poly transparent conductive line material is Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and oxidation. Zinc Oxide (ZnO) or Aluminum Zinc Oxide (AZO).
29、如实施方式27所述的微型矩阵式显示装置，其中该多透明导通线路设置于该些发光二极管像素之间。The micro-matrix display device of embodiment 27, wherein the multi-transparent conduction line is disposed between the light-emitting diode pixels.
30、如实施方式27所述的微型矩阵式显示装置，其中该多透明导通线路设置于该些发光二极管像素上。The micro-matrix display device of embodiment 27, wherein the multi-transparent conduction line is disposed on the plurality of LED pixels.
31、如实施方式27所述的微型矩阵式显示装置，其中该多透明导通线路可以是扫描线。The micro-matrix display device of embodiment 27, wherein the multi-transparent conduction line is a scan line.
32、如实施方式27所述的微型矩阵式显示装置，其中该多透明导通线路可以是数据线。32. The micro-matrix display device of embodiment 27, wherein the multi-transparent conduction line is a data line.
33、如实施方式27所述的微型矩阵式显示装置，还包括一扫描控制电路，电性连接于该多透明导通线路。33. The micro-matrix display device of embodiment 27, further comprising a scan control circuit electrically connected to the multi-transparent conduction line.
34、如实施方式27所述的微型矩阵式显示装置，还包括一数据控制电路，电性连接于该多透明导通线路。The micro-matrix display device of embodiment 27, further comprising a data control circuit electrically connected to the multi-transparent conduction line.
35、如实施方式1～5的任一所述的微型矩阵式显示装置，还包括一透镜矩阵，具有多个透镜像素，各该透镜像素对应于一萤光体像素。 The micro-matrix display device according to any one of embodiments 1 to 5, further comprising a lens matrix having a plurality of lens pixels, each of the lens pixels corresponding to a phosphor pixel.
36、如实施方式1～5的任一所述的微型矩阵式显示装置，还包括一透镜矩阵，其中该萤光体矩阵设置于该透镜矩阵及该发光二极管矩阵之间。The micro-matrix display device of any one of embodiments 1 to 5, further comprising a lens matrix, wherein the phosphor matrix is disposed between the lens matrix and the light-emitting diode matrix.
37、一种微型矩阵式显示装置的制造方法，包括：提供一发光二极管矩阵，该发光二极管矩阵包括多个发光二极管像素；以及提供一萤光体矩阵，相对于该发光二极管矩阵设置，该萤光体矩阵包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素。37. A method of fabricating a micro-matrix display device, comprising: providing a matrix of light-emitting diodes, the matrix of light-emitting diodes comprising a plurality of light-emitting diode pixels; and providing a matrix of phosphors disposed relative to the matrix of the light-emitting diodes The light body matrix includes a plurality of phosphor pixels, each of which corresponds to a light emitting diode pixel.
38、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵包括一第一萤光体，该第一萤光体包括红色染料、或红色颜料、或红色有机染料、或红色有机颜料、或红色无机染料、或红色无机颜料；通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。38. The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the phosphor matrix comprises a first phosphor comprising a red dye, or a red pigment, or a red organic dye Or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; a light source emitted from the matrix of the light emitting diodes and exciting the matrix of the phosphor to form a full color matrix display device.
39、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵包括一第二萤光体，该第二萤光体包括绿色染料、或绿色颜料、或绿色有机染料、或绿色有机颜料、或绿色无机染料、或绿色无机颜料；通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。39. The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the phosphor matrix comprises a second phosphor comprising a green dye, or a green pigment, or a green organic dye. Or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; a light source emitted from the matrix of the light emitting diode and exciting the matrix of the phosphor to form a full color matrix display device.
40、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵包括一第一萤光体以及一第二萤光体；其中该第一萤光体包括红色染料、或红色颜料、或红色有机染料、或红色有机颜料、或红色无机染料、或红色无机颜料；其中该第二萤光体包括绿色染料、或绿色颜料、或绿色有机染料、或绿色有机颜料、或绿色无机染料、或绿色无机颜料；通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。The method of manufacturing a micro-matrix display device according to the embodiment 37, wherein the phosphor matrix comprises a first phosphor and a second phosphor; wherein the first phosphor comprises a red dye, Or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or A green inorganic dye or a green inorganic pigment; a light source emitted from the matrix of the light emitting diodes and exciting the matrix of the phosphor to form a full color matrix display device.
41、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵包括一第一萤光体、一第二萤光体、一第三萤光体；其中该第一萤光体包括红色染料、或红色颜料、或红色有机染料、或红色有机颜料、或红色无机染料、或红色无机颜料；其中该第二萤光体包括绿色染料、或绿色颜料、或绿色有机染料、或绿色有机颜料、或绿色无机染料、或绿色无机颜料；其中该第三萤光体包括黄色染料、或黄色颜料、或黄色有机染料、或黄色有机颜料、或黄色无机染料、或黄色无机颜料、或黄色萤光粉、或蓝色染料、或蓝色颜料、或蓝色有机染料、或蓝色有机颜料、或蓝色无机染料、或蓝色无机颜料；通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。The method of manufacturing a micro-matrix display device according to the embodiment 37, wherein the phosphor matrix comprises a first phosphor, a second phosphor, and a third phosphor; wherein the first The phosphor includes a red dye, or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor includes a green dye, or a green pigment, or a green organic dye Or a green organic pigment, or a green inorganic dye, or a green inorganic pigment; wherein the third phosphor comprises a yellow dye, or a yellow pigment, or a yellow organic dye, or a yellow organic pigment, or a yellow inorganic dye, or a yellow inorganic pigment Or a yellow fluorescent powder, or a blue dye, or a blue pigment, or a blue organic dye, or a blue organic pigment, or a blue inorganic dye, or a blue inorganic pigment; a light source emitted through the matrix of the light emitting diode And exciting the phosphor matrix to form a full color matrix display device.
42、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵包括一第一萤光体、一第二萤光体；其中该第一萤光体包括红色染料、或红色颜料、或红色有机染料、或红色有机颜料、或红色无机染料、或红色无机颜料；其中该第二萤光体包括绿色染料、或绿色颜料、或绿色有机染料、或绿色有机颜料、或绿色无机染料、或绿色无机颜料；一透光部矩阵，包括多个透光部，每一透光部对应于一发光二极管像素；以及通过该发光二极管矩阵所发出的光源并且激发该萤光体矩阵，形成全彩矩阵式显示装置。The method of manufacturing a micro-matrix display device according to the embodiment 37, wherein the phosphor matrix comprises a first phosphor and a second phosphor; wherein the first phosphor comprises a red dye, Or a red pigment, or a red organic dye, or a red organic pigment, or a red inorganic dye, or a red inorganic pigment; wherein the second phosphor comprises a green dye, or a green pigment, or a green organic dye, or a green organic pigment, or a green inorganic dye or a green inorganic pigment; a light transmissive portion matrix comprising a plurality of light transmitting portions, each light transmitting portion corresponding to a light emitting diode pixel; and a light source emitted through the light emitting diode matrix and exciting the phosphor The matrix forms a full color matrix display device.
43、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵设置 于一基板上方，再与该发光二极管阵列结合，形成全彩矩阵式显示装置。43. A method of fabricating a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is set Above the substrate, combined with the LED array, a full color matrix display device is formed.
44、如实施方式43所述的微型矩阵式显示装置的制造方法，其中该基板包含玻璃基板、塑胶基板、柔性基板、蓝宝石基板。The method of manufacturing a micro-matrix display device according to claim 43, wherein the substrate comprises a glass substrate, a plastic substrate, a flexible substrate, and a sapphire substrate.
45、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过多次曝光显影具有光致抗蚀剂功能的萤光体所形成。The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is formed by developing a phosphor having a photoresist function by multiple exposure.
46、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过多次蚀刻萤光体所形成。46. The method of fabricating a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is formed by etching the phosphor a plurality of times.
47、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过激光切割后再与该发光二极管阵列结合，形成全彩矩阵式显示装置。47. The method of fabricating a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is laser-cut and then combined with the LED array to form a full-color matrix display device.
48、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过喷涂具有光致抗蚀剂功能的萤光体于该发光二极管矩阵的上方，再通过多次曝光显影形成该形成全彩矩阵式显示装置。48. The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is sprayed on the matrix of the light-emitting diode by spraying a phosphor having a photoresist function, and then repeatedly exposing Development forms the full color matrix display device.
49、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过喷涂萤光体于该发光二极管矩阵的上方，再通过多次蚀刻形成该形成全彩矩阵式显示装置。49. The method of manufacturing a micro-matrix display device according to Embodiment 37, wherein the phosphor matrix is formed by spraying a phosphor over the matrix of the LED, and then forming the full-color matrix display by multiple etching. Device.
50、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该发光二极管矩阵所发的波长包含蓝光或是紫外光(包含UVA、UVB、UVC)。50. The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the wavelength of the light-emitting diode matrix comprises blue light or ultraviolet light (including UVA, UVB, UVC).
51、如实施方式37所述的微型矩阵式显示装置的制造方法，还包括多导体线路的列扫描的方式控制该发光二极管矩阵，使各发光二极管像素可以具有各自的驱动电流及发光时间，即可调整发光强度。51. The method of manufacturing a micro-matrix display device according to Embodiment 37, further comprising controlling the LED matrix by means of column scanning of the multi-conductor line, so that each of the LED pixels can have a respective driving current and a light-emitting time, that is, The luminous intensity can be adjusted.
52、如实施方式51所述的微型矩阵式显示装置的制造方法，其中该些导体线路包括金、银、铜、铝、或是混合材料。52. The method of fabricating a micro-matrix display device according to embodiment 51, wherein the conductor lines comprise gold, silver, copper, aluminum, or a mixed material.
53、如实施方式37所述的微型矩阵式显示装置的制造方法，还包括一非导电载体基板，用以承载该发光二极管矩阵。53. The method of fabricating a micro-matrix display device according to embodiment 37, further comprising a non-conductive carrier substrate for carrying the matrix of the light-emitting diodes.
54、如实施方式37所述的微型矩阵式显示装置的制造方法，其中非导电载体基板包括氧化铝基板，高阻值硅基板等材料。The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the non-conductive carrier substrate comprises an alumina substrate, a high-resistance silicon substrate or the like.
55、如实施方式37所述的微型矩阵式显示装置的制造方法，还包括一绝缘层，设置于该些发光二极管像素之间。55. The method of fabricating a micro-matrix display device according to embodiment 37, further comprising an insulating layer disposed between the plurality of LED pixels.
56、如实施方式55所述的微型矩阵式显示装置的制造方法，其中该绝缘层包括氧化硅(SiOX)、氮化硅(SiNX)、聚酰亚胺(Polyimide)、或其他高分子材料。The method of manufacturing a micro-matrix display device according to embodiment 55, wherein the insulating layer comprises silicon oxide (SiO X ), silicon nitride (SiN X ), polyimide (Polyimide), or other polymer. material.
57、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该些发光二极管像素包括氮化物。57. The method of fabricating a micro-matrix display device according to embodiment 37, wherein the light-emitting diode pixels comprise a nitride.
58、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该些发光二极管像素可以是垂直式发光二极管结构。 58. The method of fabricating a micro-matrix display device according to embodiment 37, wherein the light-emitting diode pixels are vertical LED structures.
59、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该些发光二极管像素可以是水平式发光二极管结构。59. The method of fabricating a micro-matrix display device according to embodiment 37, wherein the light-emitting diode pixels are a horizontal light-emitting diode structure.
60、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该些发光二极管像素可以是覆晶式(Flip Chip)发光二极管结构。The method of manufacturing a micro-matrix display device according to the embodiment 37, wherein the light-emitting diode pixels are a Flip Chip light-emitting diode structure.
61、如实施方式37所述的微型矩阵式显示装置的制造方法，还包括一屏蔽层，设置于该些发光二极管像素之间。61. The method of fabricating a micro-matrix display device according to embodiment 37, further comprising a shielding layer disposed between the plurality of LED pixels.
62、如实施方式37所述的微型矩阵式显示装置的制造方法，还包括一屏蔽层，设置于该些萤光体像素之间。62. The method of fabricating a micro-matrix display device according to embodiment 37, further comprising a shielding layer disposed between the phosphor pixels.
63、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该些萤光体像素包括萤光粉。63. The method of fabricating a micro-matrix display device according to embodiment 37, wherein the phosphor pixels comprise phosphor powder.
64、如实施方式37所述的微型矩阵式显示装置的制造方法，还包含多透明导通线路。64. The method of manufacturing a micro-matrix display device according to embodiment 37, further comprising a multi-transparent conduction line.
65、如实施方式64所述的微型矩阵式显示装置的制造方法，其中该多透明导通线路材料可以是铟锡氧化物(Indium Tin Oxide；ITO)、铟锌氧化物(indium zinc oxide，IZO)、氧化锌(Zinc Oxide，ZnO)或氧化锌铝(Aluminum Zinc Oxide，AZO)。The method of manufacturing a micro-matrix display device according to the embodiment 64, wherein the poly transparent conductive line material is Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO) ), zinc oxide (Zinc Oxide, ZnO) or aluminum zinc oxide (Aluminum Zinc Oxide, AZO).
66、如实施方式64所述的微型矩阵式显示装置的制造方法，其中该多透明导通线路设置于该些发光二极管像素之间。66. The method of fabricating a micro-matrix display device according to embodiment 64, wherein the multi-transparent conduction line is disposed between the plurality of LED pixels.
67、如实施方式64所述的微型矩阵式显示装置的制造方法，其中该多透明导通线路设置于该些发光二极管像素上。67. The method of fabricating a micro-matrix display device according to embodiment 64, wherein the multi-transparent conduction line is disposed on the plurality of LED pixels.
68、如实施方式64所述的微型矩阵式显示装置的制造方法，其中该多透明导通线路可以是扫描线。68. The method of fabricating a micro-matrix display device according to embodiment 64, wherein the multi-transparent conductive line is a scan line.
69、如实施方式64所述的微型矩阵式显示装置的制造方法，其中该多透明导通线路可以是数据线。69. The method of fabricating a micro-matrix display device according to embodiment 64, wherein the multi-transparent conduction line is a data line.
70、如实施方式64所述的微型矩阵式显示装置的制造方法，还包括一扫描控制电路，电性连接于该多透明导通线路。70. The method of fabricating a micro-matrix display device according to embodiment 64, further comprising a scan control circuit electrically connected to the multi-transparent conduction line.
71、如实施方式64所述的微型矩阵式显示装置的制造方法，还包括一数据控制电路，电性连接于该多透明导通线路。The method of manufacturing a micro-matrix display device according to embodiment 64, further comprising a data control circuit electrically connected to the multi-transparent conduction line.
72、如实施方式37所述的微型矩阵式显示装置的制造方法，还包括一透镜矩阵，具有多个透镜像素，各该透镜像素对应于一萤光体像素。72. The method of fabricating a micro-matrix display device according to embodiment 37, further comprising a lens matrix having a plurality of lens pixels, each of the lens pixels corresponding to a phosphor pixel.
73、如实施方式37所述的微型矩阵式显示装置的制造方法，还包括一透镜矩阵，其中该萤光体矩阵设置于该透镜矩阵及该发光二极管矩阵之间。The method of manufacturing the micro-matrix display device of the embodiment 37, further comprising a lens matrix, wherein the phosphor matrix is disposed between the lens matrix and the light-emitting diode matrix.
74、如实施方式37所述的微型矩阵式显示装置的制造方法，各该发光二极管像素包括：一第一极性半导体及一第二极性半导体；一量子井发光结构，设置于该第一极性半导体及该第二极性半导体之间；多条金属导通层，各条金属导通层电性连接于每一行位置上该些发光二极管的该些第一极性半导体；以及多条导体线路，相对该些金属导通层垂直设 置，各条导体线路电性连接于每一列位置上该些发光二极管的该些第二极性半导体。74. The method of manufacturing a micro-matrix display device according to Embodiment 37, wherein each of the LED pixels comprises: a first polarity semiconductor and a second polarity semiconductor; and a quantum well light emitting structure disposed on the first Between the polar semiconductor and the second polarity semiconductor; a plurality of metal conduction layers, each of the metal conduction layers electrically connected to the first polarity semiconductors of the light emitting diodes at each row position; and a plurality of Conductor lines are vertically disposed opposite to the metal conduction layers The conductor lines are electrically connected to the second polar semiconductors of the LEDs at each column position.
75、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过3D列印的方式形成。The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is formed by 3D printing.
76、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过网版印刷的方式形成。76. The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is formed by screen printing.
77、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过利用萤光体混合光致抗蚀剂，并配合黄光微影制程，将萤光体以光致抗蚀剂型式直接涂布于该发光二极管矩阵的上方，形成全彩矩阵式显示装置。77. The method of fabricating a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is photodamped by using a phosphor-mixed photoresist and a yellow lithography process. The etchant pattern is directly applied over the matrix of the light emitting diodes to form a full color matrix display device.
78、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过利用萤光体混合光致抗蚀剂，并配合黄光微影制程，将萤光体通过黄光微影制程涂布于板材上形成如彩色滤光片，再贴合于该发光二极管矩阵的上方，形成全彩矩阵式显示装置。78. The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the phosphor matrix passes the yellow light lithography process by using a phosphor mixed photoresist and a yellow light lithography process. It is coated on a plate to form a color filter, and is then attached to the upper of the matrix of the light-emitting diode to form a full-color matrix display device.
79、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过直接制作萤光体于板材上，再使用激光切割技术形成萤光体贴片，再贴合于该发光二极管矩阵的上方，形成全彩矩阵式显示装置。79. The method of manufacturing a micro-matrix display device according to Embodiment 37, wherein the phosphor matrix is formed by directly forming a phosphor on a plate, and then forming a phosphor patch by using a laser cutting technique, and then bonding to the phosphor patch. Above the matrix of light emitting diodes, a full color matrix display device is formed.
80、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过利用有机染料混合光致抗蚀剂，并配合黄光微影制程，将有机染料以光致抗蚀剂型式直接涂布于该发光二极管矩阵的上方，形成全彩矩阵式显示装置。80. The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is made of a photoresist by using an organic dye mixed with a photoresist and a yellow lithography process. The formula is directly applied over the matrix of the light emitting diodes to form a full color matrix display device.
81、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过利用有机染料混合光致抗蚀剂，并配合黄光微影制程，将有机染料通过黄光微影制程涂布于板材上形成如彩色滤光片，再贴合于该发光二极管矩阵的上方，形成全彩矩阵式显示装置。81. The method of manufacturing a micro-matrix display device according to embodiment 37, wherein the phosphor matrix is coated with a yellow light lithography process by mixing a photoresist with an organic dye and a yellow lithography process. A color filter is formed on the plate, and is then attached to the light-emitting diode matrix to form a full-color matrix display device.
82、如实施方式37所述的微型矩阵式显示装置的制造方法，其中该萤光体矩阵通过直接制作有机染料于板材上，再使用激光切割技术形成有机染料体贴片，再贴合于该发光二极管矩阵的上方，形成全彩矩阵式显示装置。82. The method of manufacturing a micro-matrix display device according to Embodiment 37, wherein the phosphor matrix is formed by directly preparing an organic dye on a board, and then forming an organic dye body patch by using a laser cutting technique, and then bonding to the phosphor paste. Above the matrix of light emitting diodes, a full color matrix display device is formed.
83、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个蓝光发光二极管像素；以及一萤光体矩阵，包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素；其中该些萤光体像素包括至少一第一非萤光粉及至少一第二非萤光粉；其中该第一非萤光粉的发光波长不同于该第二非萤光粉的发光波长。83. A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of blue light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting a diode pixel; wherein the phosphor pixels include at least one first non-fluorescent powder and at least one second non-fluorescent powder; wherein the first non-fluorescent powder has an emission wavelength different from that of the second non-fluorescent powder The wavelength of the light.
84、如实施方式83所述的微型矩阵式显示装置，其中该第一非萤光粉包括颜料或染料。84. The micro-matrix display device of embodiment 83, wherein the first non-fluorescent powder comprises a pigment or a dye.
85、如实施方式84所述的微型矩阵式显示装置，其中该第二非萤光粉包括颜料或染料。85. The micro-matrix display device of embodiment 84, wherein the second non-fluorescent powder comprises a pigment or a dye.
86、如实施方式85所述的微型矩阵式显示装置，其中该第一非萤光粉为红色，该第二非萤光粉为绿色。 86. The micro-matrix display device of embodiment 85, wherein the first non-fluorescent powder is red and the second non-fluorescent powder is green.
87、如实施方式85所述的微型矩阵式显示装置，其中该萤光体像素还包括至少一萤光粉，该萤光粉发光波长不同于该第一非萤光粉及该第二非萤光粉的发光波长。The micro-matrix display device of embodiment 85, wherein the phosphor pixel further comprises at least one phosphor powder, the phosphor powder having a different wavelength of light than the first non-fluorescent powder and the second non-fluorescent The wavelength of the light powder.
88、如实施方式87所述的微型矩阵式显示装置，其中该萤光粉为黄色或蓝色。88. The micro-matrix display device of embodiment 87, wherein the phosphor powder is yellow or blue.
89、如实施方式87所述的微型矩阵式显示装置，其中该萤光粉包括Garnet萤光粉。89. The micro-matrix display device of embodiment 87, wherein the phosphor powder comprises Garnet phosphor powder.
90、如实施方式89所述的微型矩阵式显示装置，其中该萤光粉包括YAG:Ce。90. The micro-matrix display device of embodiment 89, wherein the phosphor comprises YAG:Ce.
91、如实施方式85所述的微型矩阵式显示装置，其中该萤光体像素还包括至少一第三非萤光粉，该第三非萤光粉发光波长不同于该第一非萤光粉及该第二非萤光粉的发光波长。The micro-matrix display device of embodiment 85, wherein the phosphor pixel further comprises at least one third non-fluorescent powder, the third non-fluorescent powder having an emission wavelength different from the first non-fluorescent powder And an emission wavelength of the second non-fluorescent powder.
92、如实施方式91所述的微型矩阵式显示装置，其中该第三非萤光粉包括颜料或染料。92. The micro-matrix display device of embodiment 91, wherein the third non-fluorescent powder comprises a pigment or a dye.
93、如实施方式91所述的微型矩阵式显示装置，其中该第三非萤光粉为黄色或蓝色。93. The micro-matrix display device of embodiment 91, wherein the third non-fluorescent powder is yellow or blue.
94、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个蓝光发光二极管像素；以及一萤光体矩阵，包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素；其中该些萤光体像素包括至少一非萤光粉及至少一萤光粉；其中该非萤光粉的发光波长不同于该萤光粉的发光波长。94. A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of blue light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting a diode pixel; wherein the phosphor pixels comprise at least one non-fluorescent powder and at least one phosphor powder; wherein the non-fluorescent powder has an emission wavelength different from an emission wavelength of the phosphor powder.
95、如实施方式94所述的微型矩阵式显示装置，其中该非萤光粉包括颜料或染料。The micro-matrix display device of embodiment 94, wherein the non-fluorescent powder comprises a pigment or a dye.
96、如实施方式95所述的微型矩阵式显示装置，其中该非萤光粉为红色或绿色。96. The micro-matrix display device of embodiment 95, wherein the non-fluorescent powder is red or green.
97、如实施方式94所述的微型矩阵式显示装置，其中该萤光粉为黄色或蓝色。97. The micro-matrix display device of embodiment 94, wherein the phosphor powder is yellow or blue.
98、如实施方式97所述的微型矩阵式显示装置，其中该萤光粉包括Garnet萤光粉。98. The micro-matrix display device of embodiment 97, wherein the phosphor powder comprises Garnet phosphor powder.
99、如实施方式98所述的微型矩阵式显示装置，其中该萤光粉包括YAG:Ce。99. The micro-matrix display device of embodiment 98, wherein the phosphor comprises YAG:Ce.
100、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个蓝光发光二极管像素；以及一萤光体矩阵，包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素；其中该些萤光体像素包括至少一红色非萤光粉、至少一绿色非萤光粉及至少一蓝色非萤光粉。100. A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of blue light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting a diode pixel; wherein the phosphor pixels comprise at least one red non-fluorescent powder, at least one green non-fluorescent powder, and at least one blue non-fluorescent powder.
101、如实施方式98所述的微型矩阵式显示装置，其中该红色非萤光粉、该绿色非萤光粉及该蓝色非萤光粉包括颜料或染料。101. The micro-matrix display device of embodiment 98, wherein the red non-fluorescent powder, the green non-fluorescent powder, and the blue non-fluorescent powder comprise a pigment or a dye.
102、一种微型矩阵式显示装置，包括：一发光二极管矩阵，包括多个蓝光发光二极管像素；以及一萤光体矩阵，包括多个萤光体像素，每一萤光体像素对应于一发光二极管像素；其中该些萤光体像素包括至少一红色非萤光粉、至少一绿色非萤光粉及至少一黄色萤光粉。102. A micro-matrix display device comprising: a light-emitting diode matrix comprising a plurality of blue light-emitting diode pixels; and a phosphor matrix comprising a plurality of phosphor pixels, each of the phosphor pixels corresponding to a light-emitting a diode pixel; wherein the phosphor pixels comprise at least one red non-fluorescent powder, at least one green non-fluorescent powder, and at least one yellow phosphor powder.
103、如实施方式102所述的微型矩阵式显示装置，其中该红色非萤光粉及该绿色非萤光粉包括颜料或染料。103. The micro-matrix display device of embodiment 102, wherein the red non-fluorescent powder and the green non-fluorescent powder comprise a pigment or a dye.
104、如实施方式102所述的微型矩阵式显示装置，其中该萤光粉包括Garnet萤光粉。104. The micro-matrix display device of embodiment 102, wherein the phosphor powder comprises Garnet phosphor powder.
105、如实施方式104所述的微型矩阵式显示装置，其中该萤光粉包括YAG:Ce。 105. The micro-matrix display device of embodiment 104, wherein the phosphor comprises YAG:Ce.
又一方面，本发明提出一种微型发光装置及其制造方法，其实施方式可包括：In another aspect, the present invention provides a miniature light emitting device and a method of fabricating the same, which may include:
1、一种微型发光装置，包括：一基座，其中该基座具有一水平方向及一垂直方向；多个垂直走线，位于该基座上方沿着该水平方向平行排列，其中该些垂直走线包括一第一垂直走线、一第二垂直走线、一第三垂直走线，彼此相互平行排列；多个水平走线，位于该基座上方沿着该垂直方向平行排列，其中该些水平走线包括一第一水平走线、一第二水平走线、一第三水平走线，彼此相互平行排列；以及多个发光二极管条，位于该基座上方沿着该水平方向平行排列，其中该些发光二极管条至少包括一第一发光二极管条、一第二发光二极管条、一第三发光二极管条，彼此相互平行排列，每一个发光二极管条具有多个发光二极管，每一个发光二极管包括一第一金属电极以及一第二金属电极，其中该第一发光二极管条上的该些发光二极管的该些第一金属电极对应地电性连接于该第一水平走线、该第二水平走线及该第三水平走线，其中该第一发光二极管条上的该些发光二极管的该些第二金属电极共同电性连接于该第一垂直走线，其中该第二发光二极管条上的该些发光二极管的该些第一金属电极对应地电性连接于该第一水平走线、该第二水平走线及该第三水平走线，其中该第二发光二极管条上的该些发光二极管的该些第二金属电极共同电性连接于该第二垂直走线，其中该第三发光二极管条上的该些发光二极管的该些第一金属电极对应地电性连接于该第一水平走线、该第二水平走线及该第三水平走线，其中该第三发光二极管条上的该些发光二极管的该些第二金属电极具有共同电性连接于该第三垂直走线。A micro-light-emitting device comprising: a pedestal, wherein the pedestal has a horizontal direction and a vertical direction; and a plurality of vertical traces are arranged parallel to the horizontal direction above the pedestal, wherein the vertical The trace includes a first vertical trace, a second vertical trace, and a third vertical trace, which are arranged parallel to each other; a plurality of horizontal traces are arranged in parallel along the vertical direction above the base, wherein the trace The horizontal traces include a first horizontal trace, a second horizontal trace, and a third horizontal trace arranged parallel to each other; and a plurality of LED strips arranged parallel to the horizontal direction above the pedestal The light emitting diode strips include at least a first light emitting diode strip, a second light emitting diode strip, and a third light emitting diode strip, which are arranged parallel to each other. Each of the light emitting diode strips has a plurality of light emitting diodes, and each of the light emitting diodes The first metal electrode and the second metal electrode are disposed, wherein the first metal electrode pairs of the light emitting diodes on the first LED strip Electrically connected to the first horizontal trace, the second horizontal trace, and the third horizontal trace, wherein the second metal electrodes of the LEDs on the first LED strip are electrically Connected to the first vertical trace, wherein the first metal electrodes of the LEDs on the second LED strip are electrically connected to the first horizontal trace, the second horizontal trace, and the a third horizontal trace, wherein the second metal electrodes of the LEDs on the second LED strip are electrically connected to the second vertical trace, wherein the illuminations on the third LED strip The first metal electrodes of the diode are electrically connected to the first horizontal trace, the second horizontal trace, and the third horizontal trace, wherein the light emitting diodes on the third LED strip The second metal electrodes have a common electrical connection to the third vertical trace.
2、如实施方式1所述的微型发光装置，其中该第一发光二极管条上的该些发光二极管的该些第二金属电极可以是一共同金属电极。2. The micro-light-emitting device of embodiment 1, wherein the second metal electrodes of the light-emitting diodes on the first LED strip are a common metal electrode.
3、如实施方式1所述的微型发光装置，其中该第二发光二极管条上的该些发光二极管的该些第二金属电极可以是一共同金属电极。3. The micro-light-emitting device of embodiment 1, wherein the second metal electrodes of the light-emitting diodes on the second LED strip are a common metal electrode.
4、如实施方式1所述的微型发光装置，其中该第三发光二极管条上的该些发光二极管的该些第二金属电极可以是一共同金属电极。4. The micro-light-emitting device of embodiment 1, wherein the second metal electrodes of the light-emitting diodes on the third LED strip are a common metal electrode.
5、如实施方式1所述的微型发光装置，其中该些发光二极管条具有至少一磊晶基板，包括一第一磊晶基板，一第二磊晶基板，一第三磊晶基板，其中该些发光二极管包括多个半导体磊晶层位于该磊晶基板的上方，包括一第一半导体磊晶层，一第二半导体磊晶层，一第三半导体磊晶层，其中该第一半导体磊晶层位于该第一磊晶基板的上方，该第二半导体磊晶层位于该第二磊晶基板的上方，该第三半导体磊晶层位于该第三磊晶基板的上方，其中该第一发光二极管条以及该第二发光二极管条以及第三发光二极管条分别具有一第一发光二极管、一第二发光二极管、一第三发光二极管，其中该第一发光二极管、该第二发光二极管及该第三发光二极管的该些第一金属电极彼此电性连接于该第一水平走线而形成一第一像素，其中该第一发光二极管、该第二个发光二极管及该第三发光二极管的该些第一金属电极彼此电性连接于该第二水平走线而形成一第二像素，其中该第一发光二极管、该第二发光二极管及该第三个发光二极管的该些第一金属电极彼此电性连接于该第三 水平走线而形成一第三像素。The micro-light-emitting device of the first embodiment, wherein the light-emitting diode strips have at least one epitaxial substrate, including a first epitaxial substrate, a second epitaxial substrate, and a third epitaxial substrate. The light emitting diodes include a plurality of semiconductor epitaxial layers above the epitaxial substrate, including a first semiconductor epitaxial layer, a second semiconductor epitaxial layer, and a third semiconductor epitaxial layer, wherein the first semiconductor epitaxial layer The layer is located above the first epitaxial substrate, the second semiconductor epitaxial layer is located above the second epitaxial substrate, and the third semiconductor epitaxial layer is located above the third epitaxial substrate, wherein the first illumination The diode strip and the second LED strip and the third LED strip respectively have a first LED, a second LED, and a third LED, wherein the first LED, the second LED, and the first The first metal electrodes of the three LEDs are electrically connected to the first horizontal trace to form a first pixel, wherein the first LED, the second LED The first metal electrodes of the transistor and the third LED are electrically connected to the second horizontal line to form a second pixel, wherein the first LED, the second LED, and the third The first metal electrodes of the light emitting diode are electrically connected to the third Horizontally traces to form a third pixel.
6、如实施方式2所述的微型发光装置，其中该些第二金属电极位于该磊晶基板的下方，并与该些垂直走线电性连接，该些第一金属电极位于该些半导体磊晶层的上方，并与该些水平走线电性连接，该些发光二极管具有垂直电流导通的结构。6. The micro-light-emitting device of embodiment 2, wherein the second metal electrodes are located below the epitaxial substrate and are electrically connected to the vertical traces, and the first metal electrodes are located at the semiconductor strips Above the crystal layer, and electrically connected to the horizontal traces, the light emitting diodes have a structure in which a vertical current is conducted.
7、如实施方式2所述的微型发光装置，其中该多个第一金属电极与该多个第二金属电极位于该些半导体磊晶层上，该些第一金属电极与该多个第二金属电极与该磊晶基板没有直接接触，电流不会通过该磊晶基板，该些发光二极管具有水平电流导通的结构。7. The micro-light-emitting device of embodiment 2, wherein the plurality of first metal electrodes and the plurality of second metal electrodes are on the semiconductor epitaxial layers, the first metal electrodes and the plurality of second The metal electrode is not in direct contact with the epitaxial substrate, and current does not pass through the epitaxial substrate, and the light emitting diodes have a structure in which horizontal current is conducted.
8、如实施方式2所述的微型发光装置，其中该多个第一金属电极与该些第二金属电极位于该多个半导体磊晶层上，并将该些发光二极管条翻转，使得该些第一金属电极与该些第二金属电极与该基板的该些水平走线及该些垂直走线电性连接，该些第一金属电极与该些第二金属电极位于该磊晶基板以及该基座之间，该些发光二极管形成覆晶的结构。8. The micro-light-emitting device of embodiment 2, wherein the plurality of first metal electrodes and the second metal electrodes are on the plurality of semiconductor epitaxial layers, and the light-emitting diode strips are flipped so that the The first metal electrode and the second metal electrodes are electrically connected to the horizontal traces of the substrate and the vertical traces, and the first metal electrodes and the second metal electrodes are located on the epitaxial substrate and the Between the pedestals, the light emitting diodes form a flip chip structure.
9、如实施方式2所述的微型发光装置，使用一激光切割技术将该磊晶基板切割，使该些发光二极管彼此独立。9. The micro-light-emitting device of embodiment 2, wherein the epitaxial substrate is cut using a laser cutting technique to make the light-emitting diodes independent of each other.
10、如实施方式1所述的微型发光装置，其中该些第一金属电极与该些水平走线电性连接方式以及该些第二金属电极与该些垂直走线电性连接方式包括打线连接、导电金属条连接、金球连接、金属键结连接、ITO导电玻璃线路连接、异方性导电胶连接以及上述综合方式。The micro-light-emitting device of the first embodiment, wherein the first metal electrodes are electrically connected to the horizontal traces, and the second metal electrodes are electrically connected to the vertical traces. Connection, conductive metal strip connection, gold ball connection, metal bond connection, ITO conductive glass line connection, anisotropic conductive glue connection and the above integrated manner.
11、如实施方式1所述的微型发光装置，其中该些发光二极管条包括红光发光二极管条、绿光发光二极管条、蓝光发光二极管条。11. The micro-light-emitting device of embodiment 1, wherein the light-emitting diode strips comprise red light-emitting diode strips, green light-emitting diode strips, and blue light-emitting diode strips.
12、如实施方式1所述的微型发光装置，其中该些发光二极管条包括红光发光二极管条、绿光发光二极管条、蓝光发光二极管条、紫外线(包含UVA、UVB、UVC)发光二极管条、红外线发光二极管条的其中三种组合。12. The micro-light-emitting device of embodiment 1, wherein the light-emitting diode strips comprise red light-emitting diode strips, green light-emitting diode strips, blue light-emitting diode strips, ultraviolet (including UVA, UVB, UVC) light-emitting diode strips, Three combinations of infrared light emitting diode strips.
13、如实施方式1所述的微型发光装置，其中该基座的材料包括印刷电路板(PCB)、陶瓷基板、金属基板、硅基板、铜基板、半导体基板、玻璃基板、线路基板。13. The micro-light-emitting device of embodiment 1, wherein the material of the susceptor comprises a printed circuit board (PCB), a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, and a circuit substrate.
14、如实施方式1所述的微型发光装置，其中该磊晶基板包括蓝宝石基板、氮化镓基板、氮化铝基板、砷化镓基板、磷化镓基板、磷化铟基板、氧化锌基板、硅基板、碳化硅基板。The micro-light-emitting device according to the first embodiment, wherein the epitaxial substrate comprises a sapphire substrate, a gallium nitride substrate, an aluminum nitride substrate, a gallium arsenide substrate, a gallium phosphide substrate, an indium phosphide substrate, and a zinc oxide substrate. , silicon substrate, silicon carbide substrate.
15、如实施方式1所述的微型发光装置，其中该磊晶基板的厚度经由研磨抛光后所剩下的厚度约为10微米至200微米。15. The micro-light-emitting device of embodiment 1, wherein the thickness of the epitaxial substrate remaining after polishing by polishing is about 10 micrometers to 200 micrometers.
16、如实施方式1所述的微型发光装置，其中该磊晶基板的厚度经由研磨抛光后所剩下的厚度约为10微米至100微米。16. The micro-light-emitting device of embodiment 1, wherein the thickness of the epitaxial substrate remaining after grinding and polishing is about 10 micrometers to 100 micrometers.
17、如实施方式1所述的微型发光装置，其中该磊晶基板的厚度经由研磨抛光后所剩下的厚度约为10微米至30微米。17. The micro-light-emitting device of embodiment 1, wherein the thickness of the epitaxial substrate remaining after polishing by polishing is about 10 micrometers to 30 micrometers.
18、一种微型发光装置，包括：一第一基座；一第二基座，是相对于该第一基座平行 设置；多个扫描走线，沿着一第一方向平行地设置于该第一基座上，并面向该第二基座；多个数据走线，沿着一第二方向平行地设置于该第二基座上，并面向该第一基座，该第一方向是与该第二方向垂直；以及多个发光二极管条，沿着该第二方向平行地设置于该第一基座及该第二基座之间，其中每一发光二极管条是对应地与一数据走线电性连接，其中每一发光二极管条是分别与该些扫描走线电性连接。18. A miniature illumination device comprising: a first pedestal; a second pedestal parallel to the first pedestal a plurality of scan traces disposed on the first pedestal in parallel along a first direction and facing the second pedestal; a plurality of data traces disposed in parallel along a second direction a second pedestal facing the first pedestal, the first direction being perpendicular to the second direction; and a plurality of light emitting diode strips disposed parallel to the first pedestal along the second direction and the Between the second pedestals, each of the LED strips is electrically connected to a data trace, wherein each of the LED strips is electrically connected to the scan traces.
19、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，其中每一发光二极管条的该些发光二极管是对应地与一数据走线电性连接，其中在该些发光二极管条中，与同一扫描走线电性连接的该些发光二极管是构成一像素。The micro-light-emitting device of embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, wherein the light-emitting diodes of each of the light-emitting diode strips are correspondingly electrically connected to a data trace, wherein Among the LED strips, the LEDs electrically connected to the same scan trace form a pixel.
20、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，每一发光二极管包括一磊晶基板、一第一电极及一第二电极，其中该第一电极及该第二电极是设置于该磊晶基板的同一侧，该些第一电极及该些第二电极是分别于该些数据走线及该些扫描走线电性连接。The micro-light-emitting device of embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising an epitaxial substrate, a first electrode and a second electrode, wherein the first electrode The second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces, respectively.
21、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，每一发光二极管包括一磊晶基板、一第一电极及一第二电极，其中该第一电极及该第二电极是设置于该磊晶基板的相异侧，该些第一电极及该些第二电极是分别于该些数据走线及该些扫描走线电性连接。The micro-light-emitting device of embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising an epitaxial substrate, a first electrode and a second electrode, wherein the first electrode The second electrode is disposed on the opposite side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces, respectively.
22、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板，每一发光二极管包括一第一电极及一第二电极，其中该些第一电极及该些第二电极设置于该磊晶基板的同一侧，该些第一电极及该些第二电极分别于该些数据走线及该些扫描走线电性连接。The micro-light-emitting device of embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprise an epitaxial substrate, each light-emitting diode comprising a first electrode and a second electrode, The first electrodes and the second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
23、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板，每一发光二极管包括一第一电极及一第二电极，其中该些第一电极及该些第二电极设置于该磊晶基板的相异侧，该些第一电极及该些第二电极分别于该些数据走线及该些扫描走线电性连接。The micro-light-emitting device of the embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprise an epitaxial substrate, and each of the light-emitting diodes comprises a first electrode and a second electrode. The first electrodes and the second electrodes are disposed on different sides of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively. .
24、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板及一第一电极，每一发光二极管包括一第二电极，其中该第一电极及该些第二电极设置于该磊晶基板的同一侧，该些第一电极及该些第二电极分别于该些数据走线及该些扫描走线电性连接。The micro-light-emitting device of the embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprise an epitaxial substrate and a first electrode, and each of the light-emitting diodes comprises a second electrode. The first electrode and the second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
25、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板及一第一电极，每一发光二极管包括一第二电极，其中该第一电极及该些第二电极设置于该磊晶基板的相异侧，该些第一电极及该些第二电极分别于该些数据走线及该些扫描走线电性连接。The micro-light-emitting device of the embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprise an epitaxial substrate and a first electrode, and each of the light-emitting diodes comprises a second electrode. The first electrode and the second electrodes are disposed on different sides of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
26、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，每一发光二极管包括一第一型半导体层、一发光层及一第二型半导体层，该发光层设 置于该第一型半导体层及该第二型半导体层之间。The micro-light-emitting device of embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, the light emitting Layer And disposed between the first type semiconductor layer and the second type semiconductor layer.
27、如实施方式18所述的微型发光装置，其中该些发光二极管条与该些水平走线电性连接方式包括打线连接、导电金属条连接、金球连接、金属键结连接、ITO导电玻璃线路连接、异方性导电胶连接以及上述综合方式。The micro-light-emitting device of embodiment 18, wherein the light-emitting diode strips are electrically connected to the horizontal traces, including a wire bonding connection, a conductive metal strip connection, a gold ball connection, a metal bonding connection, and an ITO conductive connection. Glass line connections, anisotropic conductive glue connections, and the above integrated approach.
28、如实施方式18所述的微型发光装置，其中该些发光二极管条与该些数据走线电性连接方式包括打线连接、导电金属条连接、金球连接、金属键结连接、ITO导电玻璃线路连接、异方性导电胶连接以及上述综合方式。The micro-light-emitting device of embodiment 18, wherein the light-emitting diode strips are electrically connected to the data traces, including a wire bonding connection, a conductive metal strip connection, a gold ball connection, a metal bonding connection, and an ITO conductive connection. Glass line connections, anisotropic conductive glue connections, and the above integrated approach.
29、如实施方式18所述的微型发光装置，其中该些发光二极管条包括一红光发光二极管条、一绿光发光二极管条及一蓝光发光二极管条。The micro-light-emitting device of embodiment 18, wherein the light-emitting diode strips comprise a red light-emitting diode strip, a green light-emitting diode strip, and a blue light-emitting diode strip.
30、如实施方式18所述的微型发光装置，其中该些发光二极管条包括一红光发光二极管条、一绿光发光二极管条、一蓝光发光二极管条、一紫外线(包含UVA、UVB、UVC)发光二极管条、一红外线发光二极管条、一白光发光二极管条的其中任意组合。The micro-light-emitting device of embodiment 18, wherein the light-emitting diode strips comprise a red light-emitting diode strip, a green light-emitting diode strip, a blue light-emitting diode strip, and an ultraviolet light (including UVA, UVB, UVC). Any combination of a light emitting diode strip, an infrared light emitting diode strip, and a white light emitting diode strip.
31、如实施方式18所述的微型发光装置，其中该第一基座可以是透明基板。The micro-light-emitting device of embodiment 18, wherein the first pedestal can be a transparent substrate.
32、如实施方式18所述的微型发光装置，其中该第二基座包括印刷电路板(PCB)、陶瓷基板、金属基板、硅基板、铜基板。32. The micro-light-emitting device of embodiment 18, wherein the second pedestal comprises a printed circuit board (PCB), a ceramic substrate, a metal substrate, a silicon substrate, and a copper substrate.
33、如实施方式18所述的微型发光装置，还包括：一扫描电路，分别与该些扫描走线电性连接；以及一数据电路，分别与该些数据走线电性连接。33. The micro-light-emitting device of embodiment 18, further comprising: a scanning circuit electrically connected to the scanning traces; and a data circuit electrically connected to the data traces.
34、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板，该磊晶基板是可经过一研磨厚度超薄化处理。34. The micro-light-emitting device of embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprising an epitaxial substrate, the epitaxial substrate being ultra-thinned by a grinding thickness.
35、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板，该磊晶基板包括多个凹槽，该些凹槽位于该些发光二极管之间。The micro-light-emitting device of embodiment 18, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprise an epitaxial substrate, the epitaxial substrate comprises a plurality of grooves, and the grooves are located Between the light emitting diodes.
36、如实施方式18所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，每一发光二极管的材料包括氮化镓(GaN)、砷化镓(GaAs)、或磷化镓(GaP)。36. The micro-light emitting device of embodiment 18, wherein each of the light emitting diode strips comprises a plurality of light emitting diodes, each of which comprises gallium nitride (GaN), gallium arsenide (GaAs), or gallium phosphide. (GaP).
37、如实施方式18所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条的至少一者以上；以及一萤光粉，分布于该UV胶中。37. The micro-light-emitting device of embodiment 18, further comprising: a UV glue covering at least one of the plurality of light-emitting diode strips; and a phosphor powder distributed in the UV glue.
38、如实施方式18所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条的至少一者以上；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是蓝色、红色、绿色或黄色。38. The micro-light-emitting device of embodiment 18, further comprising: a UV glue covering at least one of the plurality of light-emitting diode strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder It can be blue, red, green or yellow.
39、如实施方式18所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条的至少一者以上；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是钇铝石榴石(YAG)。39. The micro-light-emitting device of embodiment 18, further comprising: a UV glue covering at least one of the light-emitting diode strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder It can be yttrium aluminum garnet (YAG).
40、如实施方式18所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是氮化物(Nitride)。 40. The micro-light-emitting device of embodiment 18, further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be a nitride ( Nitride).
41、如实施方式18所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是硅酸盐(Silicate)。The micro-light-emitting device of embodiment 18, further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be a silicate (Silicate).
42、如实施方式18所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是K2SiF6:Mn4+(KSF)。42. The micro-light-emitting device of embodiment 18, further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be K 2 SiF 6 : Mn 4 + (KSF).
43、如实施方式18所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是SrGa2S4:Eu2+(SGS)。The micro-light-emitting device of embodiment 18, further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be SrGa 2 S 4 : Eu 2 + (SGS).
44、一种微型发光装置，包括：M个扫描走线，沿着一第一方向平行地设置，M为大于2的正整数；N个数据走线，沿着一第二方向平行地设置，该第一方向是与该第二方向垂直，N为大于2的正整数；以及N个发光二极管条，沿着该第二方向平行地设置，其中第i个发光二极管条是对应地与第i个数据走线电性连接，i为正整数，2<i≦N，其中每一发光二极管条的第j个发光二极管是对应地与第j个扫描走线电性连接，j为正整数，2<j≦M。44. A miniature illuminating device comprising: M scanning traces disposed in parallel along a first direction, M being a positive integer greater than 2; N data traces disposed in parallel along a second direction, The first direction is perpendicular to the second direction, N is a positive integer greater than 2; and N light emitting diode strips are disposed in parallel along the second direction, wherein the ith LED strip is correspondingly and i The data traces are electrically connected, i is a positive integer, 2<i≦N, wherein the jth LED of each LED strip is electrically connected to the jth scan trace, and j is a positive integer. 2<j≦M.
45、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，其中每一发光二极管条的该些发光二极管对应地与一数据走线电性连接，其中在该些发光二极管条中，与同一扫描走线电性连接的该些发光二极管构成一像素。The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, wherein the light-emitting diodes of each of the light-emitting diode strips are correspondingly electrically connected to a data trace, wherein Among the LED strips, the LEDs electrically connected to the same scan trace form a pixel.
46、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，每一发光二极管包括一磊晶基板、一第一电极及一第二电极，其中该第一电极及该第二电极设置于该磊晶基板的同一侧，该些第一电极及该些第二电极分别于该些数据走线及该些扫描走线电性连接。The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising an epitaxial substrate, a first electrode and a second electrode, wherein the first electrode The second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
47、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，每一发光二极管包括一磊晶基板、一第一电极及一第二电极，其中该第一电极及该第二电极设置于该磊晶基板的相异侧，该些第一电极及该些第二电极分别于该些数据走线及该些扫描走线电性连接。47. The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising an epitaxial substrate, a first electrode and a second electrode, wherein the first electrode The second electrode is disposed on the opposite side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
48、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板，每一发光二极管包括一第一电极及一第二电极，其中该些第一电极及该些第二电极设置于该磊晶基板的同一侧，该些第一电极及该些第二电极分别于该些数据走线及该些扫描走线电性连接。48. The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprise an epitaxial substrate, each light-emitting diode comprising a first electrode and a second electrode, The first electrodes and the second electrodes are disposed on the same side of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
49、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板，每一发光二极管包括一第一电极及一第二电极，其中该些第一电极及该些第二电极设置于该磊晶基板的相异侧，该些第一电极及该些第二电极分别于该些数据走线及该些扫描走线电性连接。49. The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprise an epitaxial substrate, each light-emitting diode comprising a first electrode and a second electrode, The first electrodes and the second electrodes are disposed on different sides of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively. .
50、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板及一第一电极，每一发光二极管包括一第二电极，其中该第一电极及该些第二电极设置于该磊晶基板的同一侧，该些第一电极及该些第二电极 分别于该些数据走线及该些扫描走线电性连接。50. The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprising an epitaxial substrate and a first electrode, each light-emitting diode comprising a second electrode, The first electrode and the second electrodes are disposed on the same side of the epitaxial substrate, the first electrodes and the second electrodes The data traces and the scan traces are electrically connected to the scan lines.
51、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板及一第一电极，每一发光二极管包括一第二电极，其中该第一电极及该些第二电极设置于该磊晶基板的相异侧，该些第一电极及该些第二电极分别于该些数据走线及该些扫描走线电性连接。The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprise an epitaxial substrate and a first electrode, and each of the light-emitting diodes comprises a second electrode. The first electrode and the second electrodes are disposed on different sides of the epitaxial substrate, and the first electrodes and the second electrodes are electrically connected to the data traces and the scan traces respectively.
52、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，每一发光二极管包括一第一型半导体层、一发光层及一第二型半导体层，该发光层设置于该第一型半导体层及该第二型半导体层之间。The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each light-emitting diode comprising a first type semiconductor layer, a light emitting layer and a second type semiconductor layer, the light emitting The layer is disposed between the first type semiconductor layer and the second type semiconductor layer.
53、如实施方式44所述的微型发光装置，其中该些发光二极管条与该些水平走线电性连接方式包括打线连接、导电金属条连接、金球连接、金属键结连接、ITO导电玻璃线路连接、异方性导电胶连接以及上述综合方式。The micro-light-emitting device of embodiment 44, wherein the light-emitting diode strips are electrically connected to the horizontal traces, including a wire bonding connection, a conductive metal strip connection, a gold ball connection, a metal bonding connection, and an ITO conductive connection. Glass line connections, anisotropic conductive glue connections, and the above integrated approach.
54、如实施方式44所述的微型发光装置，其中该些发光二极管条与该些数据走线电性连接方式包括打线连接、导电金属条连接、金球连接、金属键结连接、ITO导电玻璃线路连接、异方性导电胶连接以及上述综合方式。The micro-light-emitting device of embodiment 44, wherein the light-emitting diode strips are electrically connected to the data traces, including a wire bonding connection, a conductive metal strip connection, a gold ball connection, a metal bonding connection, and an ITO conductive connection. Glass line connections, anisotropic conductive glue connections, and the above integrated approach.
55、如实施方式44所述的微型发光装置，其中该些发光二极管条包括一红光发光二极管条、一绿光发光二极管条及一蓝光发光二极管条。The micro-light-emitting device of embodiment 44, wherein the light-emitting diode strips comprise a red light-emitting diode strip, a green light-emitting diode strip, and a blue light-emitting diode strip.
56、如实施方式44所述的微型发光装置，其中该些发光二极管条包括一红光发光二极管条、一绿光发光二极管条、一蓝光发光二极管条、一紫外线(包含UVA、UVB、UVC)发光二极管条、一红外线发光二极管条、一白光发光二极管条的其中任意组合。The micro-light-emitting device of embodiment 44, wherein the light-emitting diode strips comprise a red light-emitting diode strip, a green light-emitting diode strip, a blue light-emitting diode strip, and an ultraviolet light (including UVA, UVB, UVC). Any combination of a light emitting diode strip, an infrared light emitting diode strip, and a white light emitting diode strip.
57、如实施方式44所述的微型发光装置，还包括一第一基座，该些扫描走线设置于该第一基座上，其中该第一基座可以是透明基板。The micro-light-emitting device of embodiment 44, further comprising a first pedestal, wherein the scan traces are disposed on the first pedestal, wherein the first pedestal may be a transparent substrate.
58、如实施方式44所述的微型发光装置，还包括一第二基座，该些数据走线设置于该第二基座上，其中该第二基座包括印刷电路板(PCB)、陶瓷基板、金属基板、硅基板、铜基板。The micro-light-emitting device of embodiment 44, further comprising a second pedestal, wherein the data traces are disposed on the second pedestal, wherein the second pedestal comprises a printed circuit board (PCB), ceramic A substrate, a metal substrate, a silicon substrate, or a copper substrate.
59、如实施方式44所述的微型发光装置，还包括：一扫描电路，分别与该些扫描走线电性连接；以及一数据电路，分别与该些数据走线电性连接。The micro-light-emitting device of embodiment 44, further comprising: a scanning circuit electrically connected to the scanning traces; and a data circuit electrically connected to the data traces.
60、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板，该磊晶基板可经过一研磨厚度超薄化处理。60. The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprising an epitaxial substrate, the epitaxial substrate being subjected to a polishing thickness ultra-thinning treatment.
61、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，该些发光二极管包括一磊晶基板，该磊晶基板包括多个凹槽，该些凹槽位于该些发光二极管之间。61. The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, the light-emitting diodes comprising an epitaxial substrate, the epitaxial substrate comprising a plurality of grooves, the grooves being located Between the light emitting diodes.
62、如实施方式44所述的微型发光装置，其中每一发光二极管条包括多个发光二极管，每一发光二极管的材料包括氮化镓(GaN)、氮化铟镓(InGaN)、氮化铝镓(AlGaN)、氮化铝铟镓(AlInGaN)、氮化铟(InN)、氮化铝(AlN)、氮化硼(BN)、氮化硼铟(BInN)、 氮化硼镓(BGaN)、氮化铝硼(AlBN)、氮化铝硼镓(AlBGaN)、氮化铝铟硼镓(AlInBGaN)、砷化镓(GaAs)、或磷化镓(GaP)。62. The micro-light-emitting device of embodiment 44, wherein each of the light-emitting diode strips comprises a plurality of light-emitting diodes, each of which comprises gallium nitride (GaN), indium gallium nitride (InGaN), aluminum nitride AlGaN, AlInGaN, InN, AlN, boron nitride (BN), boron nitride indium (BInN), Boron nitride (BGaN), aluminum nitride boron (AlBN), aluminum borosilicate (AlBGaN), aluminum indium borosilicate (AlInBGaN), gallium arsenide (GaAs), or gallium phosphide (GaP).
63、如实施方式44所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条的至少一者以上；以及一萤光粉，分布于该UV胶中。The micro-light-emitting device of embodiment 44, further comprising: a UV glue covering at least one of the light-emitting diode strips; and a phosphor powder distributed in the UV glue.
64、如实施方式44所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条的至少一者以上；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是蓝色、红色、绿色或黄色。The micro-light-emitting device of embodiment 44, further comprising: a UV glue covering at least one of the light-emitting diode strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder It can be blue, red, green or yellow.
65、如实施方式44所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条的至少一者以上；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是钇铝石榴石(YAG)。The micro-light-emitting device of embodiment 44, further comprising: a UV glue covering at least one of the light-emitting diode strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder It can be yttrium aluminum garnet (YAG).
66、如实施方式44所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是氮化物(Nitride)。66. The micro-light-emitting device of embodiment 44, further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be a nitride ( Nitride).
67、如实施方式44所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是硅酸盐(Silicate)。67. The micro-light-emitting device of embodiment 44, further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be a silicate (Silicate).
68、如实施方式44所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是K2SiF6:Mn4+(KSF)。68. The micro-light-emitting device of embodiment 44, further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be K 2 SiF 6 : Mn 4 + (KSF).
69、如实施方式44所述的微型发光装置，还包括：一UV胶，覆盖该些发光二极管条；以及一萤光粉，分布于该UV胶中，其中该萤光粉可以是SrGa2S4:Eu2+(SGS)。The micro-light-emitting device of embodiment 44, further comprising: a UV glue covering the LED strips; and a phosphor powder distributed in the UV glue, wherein the phosphor powder may be SrGa 2 S 4 : Eu 2 + (SGS).
70、一种微型发光装置的制造方法，包括：提供一第一基座；提供一第二基座，该第二基座相对于该第一基座平行设置；设置多个扫描走线，该些扫描走线沿着一第一方向平行地设置于该第一基座上，并面向该第二基座；设置多个数据走线，该些数据走线沿着一第二方向平行地设置于该第二基座上，并面向该第一基座，该第一方向与该第二方向垂直；以及设置多个发光二极管条，该些发光二极管条沿着该第二方向平行地设置于该第一基座及该第二基座之间，其中每一发光二极管条对应地与一数据走线电性连接，其中每一发光二极管条是分别与该些扫描走线电性连接。70. A method of fabricating a miniature light emitting device, comprising: providing a first pedestal; providing a second pedestal, the second pedestal being disposed in parallel with respect to the first pedestal; and providing a plurality of scanning traces, The scan traces are disposed on the first pedestal in parallel along a first direction and face the second pedestal; a plurality of data traces are disposed, and the data traces are disposed in parallel along a second direction On the second pedestal facing the first pedestal, the first direction is perpendicular to the second direction; and a plurality of LED strips are disposed, the LED strips are disposed in parallel along the second direction Between the first pedestal and the second pedestal, each of the LED strips is electrically connected to a data trace, wherein each of the LED strips is electrically connected to the scan traces.
71、一种微型发光装置的制造方法，包括：提供一第一基座，该第一基座包括多个扫描走线，该些扫描走线是沿着一第一方向平行地设置；提供一第二基座，该第二基座是相对于该第一基座平行设置，该第二基座包括多个数据走线，该些数据走线沿着一第二方向平行地设置，并面向该第一基座，该第一方向是与该第二方向垂直；以及设置多个发光二极管条，该些发光二极管条是沿着该第二方向平行地设置于该第一基座及该第二基座之间，其中每一发光二极管条是对应地与一数据走线电性连接，其中每一发光二极管条是分别与该些扫描走线电性连接。71. A method of fabricating a miniature light emitting device, comprising: providing a first pedestal, the first pedestal comprising a plurality of scan traces, the scan traces being disposed in parallel along a first direction; providing a a second pedestal, the second pedestal is disposed in parallel with respect to the first pedestal, the second pedestal includes a plurality of data traces, the data traces are disposed in parallel along a second direction, and face The first pedestal, the first direction is perpendicular to the second direction; and a plurality of LED strips are disposed, the LED strips are disposed in parallel with the first pedestal along the second direction, and the first pedestal Between the two pedestals, each of the LED strips is electrically connected to a data trace, wherein each of the LED strips is electrically connected to the scan traces.
72、一种微型发光装置的制造方法，包括：提供M个扫描走线，该些扫描走线是沿着一第一方向平行地设置，M为大于2的正整数；提供N个数据走线，该些数据走线是沿着 一第二方向平行地设置，该第一方向是与该第二方向垂直，N为大于2的正整数；以及提供N个发光二极管条，该些发光二极管条是沿着该第二方向平行地设置，其中第i个发光二极管条是对应地与第i个数据走线电性连接，i为正整数，2<i≦N，其中每一发光二极管条的第j个发光二极管是对应地与第j个扫描走线电性连接，j为正整数，2<j≦M。72. A method of fabricating a miniature light emitting device, comprising: providing M scan traces, the scan traces being disposed in parallel along a first direction, M being a positive integer greater than 2; providing N data traces The data traces are along a second direction is disposed in parallel, the first direction is perpendicular to the second direction, N is a positive integer greater than 2; and N light emitting diode strips are provided, the light emitting diode strips are parallel along the second direction The ith LED strip is electrically connected to the ith data trace, i is a positive integer, 2<i≦N, wherein the jth LED of each LED strip is correspondingly The jth scan trace is electrically connected, and j is a positive integer, 2<j≦M.
更一方面，本发明提出一种发光装置、发光二极管、激光二极管及其制造方法，其实施方式可包括：In one aspect, the present invention provides a light emitting device, a light emitting diode, a laser diode, and a method of fabricating the same, and embodiments thereof may include:
1、一种发光装置，包括:一基板，具有至少一接垫；一发光芯片，具有至少一电极，其中该至少一接垫与该至少一电极互相面对且对齐；以及至少一第一界面层，经吸收一激光脉冲的能量而形成于该至少一接垫和至少一电极之间，以连接该至少一接垫和该至少一电极。A light-emitting device comprising: a substrate having at least one pad; a light-emitting chip having at least one electrode, wherein the at least one pad and the at least one electrode face each other and aligned; and at least a first interface The layer is formed between the at least one pad and the at least one electrode by absorbing energy of a laser pulse to connect the at least one pad and the at least one electrode.
2、如实施方式1的发光装置，其中该基板的材料包括硅基板、印刷电路板(Printed Circuit Board)、陶瓷基板、金属基板、硅基板、铜基板、半导体基板、玻璃基板、线路基板或柔性印刷电路板(Flexible Print Circuit)。2. The light emitting device of embodiment 1, wherein the material of the substrate comprises a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, a circuit substrate, or a flexible Printed circuit board (Flexible Print Circuit).
3、如实施方式1的发光装置，其中该至少一接垫的材料包括金(Au)、金锡合金(Au-Sn)、镍-铂-银合金(Ni-Pt-Ag)或铜(Cu)。3. The light emitting device of embodiment 1, wherein the material of the at least one pad comprises gold (Au), gold-tin alloy (Au-Sn), nickel-platinum-silver alloy (Ni-Pt-Ag) or copper (Cu) ).
4、如实施方式1的发光装置，其中该发光芯片为一发光二极管芯片或一激光二极管芯片。4. The light emitting device of embodiment 1, wherein the light emitting chip is a light emitting diode chip or a laser diode chip.
5、如实施方式1的发光装置，其中该至少一电极的材料包括金(Au)或金锡合金(Au-Sn)。5. The light emitting device of embodiment 1, wherein the material of the at least one electrode comprises gold (Au) or gold tin alloy (Au-Sn).
6、如实施方式1的发光装置，其中该至少一第一界面层，是接收聚焦于该至少一电极的该激光脉冲能量而形成的改质层，以连接该至少一接垫和该至少一电极。6. The illuminating device of embodiment 1, wherein the at least one first interface layer is a modified layer formed by receiving the laser pulse energy focused on the at least one electrode to connect the at least one pad and the at least one electrode.
7、如实施方式6的发光装置，其中该激光脉冲的波长范围为800nm～1100nm，该激光脉冲的光点直径为10um～150um。7. The light-emitting device of embodiment 6, wherein the laser pulse has a wavelength in the range of 800 nm to 1100 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
8、如实施方式1的发光装置，其中该至少一第一界面层，是接收聚焦于该至少一接垫和至少一电极的接触面的该激光脉冲的能量而形成的改质层。8. The light emitting device of embodiment 1, wherein the at least one first interface layer is a modified layer formed by receiving energy of the laser pulse focused on a contact surface of the at least one pad and the at least one electrode.
9、如实施方式8的发光装置，其中该至少一第一界面层接收的该激光脉冲的波长范围为800nm～1100nm，该激光脉冲的光点直径为10um～150um。9. The illuminating device of embodiment 8, wherein the at least one first interface layer receives the laser pulse having a wavelength in the range of 800 nm to 1100 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
10、如实施方式1的发光装置，其中该基板具有至少一贯孔经设置以贯穿该基板，该至少一贯孔具有一第一材料，其中该至少一接垫覆盖该至少一贯孔的一端并和该第一材料电性且导热性连接，其中该第一材料为导电及导热材料。10. The light emitting device of embodiment 1, wherein the substrate has at least a uniform aperture disposed through the substrate, the at least consistent aperture having a first material, wherein the at least one pad covers one end of the at least consistent aperture and The first material is electrically and thermally conductively connected, wherein the first material is a conductive and thermally conductive material.
11、如实施方式10的发光装置，其中该至少一第一界面层，是接收聚焦于该至少一接垫的该激光脉冲的能量而形成的改质层，以连接该至少一接垫和该至少一电极。The illuminating device of embodiment 10, wherein the at least one first interface layer is a modified layer formed by receiving energy of the laser pulse focused on the at least one pad to connect the at least one pad and the At least one electrode.
12、如实施方式11的发光装置，其中该至少一第一界面层接收的该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。 12. The illumination device of embodiment 11, wherein the laser pulse received by the at least one first interface layer has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
13、如实施方式10的发光装置，其中该至少一第一界面层，是接收聚焦于该第一材料的该激光脉冲能量的能量而形成的改质层，以连接该至少一接垫和该至少一电极。The illuminating device of embodiment 10, wherein the at least one first interface layer is a modified layer formed by receiving energy of the laser pulse energy focused on the first material to connect the at least one pad and the At least one electrode.
14、如实施方式13的发光装置，其中该至少一第一界面层接收的该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。14. The illuminating device of embodiment 13, wherein the at least one first interface layer receives the laser pulse having a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
15、如实施方式10的发光装置，其中该至少一第一界面层，是接收聚焦于该第一材料的位于该贯孔的另一端位置上的一裸面的该激光脉冲能量的能量而形成的改质层，以连接该至少一接垫和该至少一电极。15. The illuminating device of embodiment 10, wherein the at least one first interface layer is formed by receiving energy of the laser pulse energy focused on a bare surface of the first material at a position other than the end of the through hole. And a modified layer to connect the at least one pad and the at least one electrode.
16、如实施方式15的发光装置，其中该至少一第一界面层接收的该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。16. The illumination device of embodiment 15, wherein the laser pulse received by the at least one first interface layer has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
17、如实施方式10、13或15的发光装置，其中该第一材料包括金(Au)、银(Ag)或铜(Cu)。17. The light emitting device of embodiment 10, 13 or 15, wherein the first material comprises gold (Au), silver (Ag) or copper (Cu).
18、一种发光装置，包括:一基板，具有至少一接垫；一发光芯片，具有至少一电极，其中该至少一接垫与该至少一电极互相面对且对齐；以及至少一第二界面层，位于该至少一接垫和至少一电极之间，其中该至少一第二界面层连接该至少一接垫和该至少一电极。18. A light emitting device comprising: a substrate having at least one pad; a light emitting chip having at least one electrode, wherein the at least one pad and the at least one electrode face each other and aligned; and at least a second interface And a layer between the at least one pad and the at least one electrode, wherein the at least one second interface layer connects the at least one pad and the at least one electrode.
19、如实施方式18的发光装置，其中该基板的材料包括硅基板、印刷电路板(Printed Circuit Board)、陶瓷基板、金属基板、硅基板、铜基板、半导体基板、玻璃基板、线路基板或柔性印刷电路板(Flexible Print Circuit)。19. The light emitting device of embodiment 18, wherein the material of the substrate comprises a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, a wiring substrate, or a flexible Printed circuit board (Flexible Print Circuit).
20、如实施方式18的发光装置，其中该至少一接垫的材料包括金(Au)、金锡合金(Au-Sn)、镍-铂-银合金(Ni-Pt-Ag)或铜(Cu)。20. The light emitting device of embodiment 18, wherein the material of the at least one pad comprises gold (Au), gold-tin alloy (Au-Sn), nickel-platinum-silver alloy (Ni-Pt-Ag) or copper (Cu) ).
21、如实施方式18的发光装置，其中该发光芯片为一发光二极管芯片或一激光二极管芯片。21. The light emitting device of embodiment 18, wherein the light emitting chip is a light emitting diode chip or a laser diode chip.
22、如实施方式18的发光装置，其中该至少一电极的材料包括金(Au)或金锡合金(Au-Sn)。22. The light emitting device of embodiment 18, wherein the material of the at least one electrode comprises gold (Au) or gold tin alloy (Au-Sn).
23、如实施方式18的发光装置，其中该第二界面层，是由至少一胶体接收聚焦于该至少一电极的该激光脉冲能量而形成，以连接该至少一接垫和该至少一电极。The illuminating device of embodiment 18, wherein the second interface layer is formed by at least one colloid receiving the laser pulse energy focused on the at least one electrode to connect the at least one pad and the at least one electrode.
24、如实施方式23的发光装置，其中该激光脉冲的波长范围为800nm～1100nm，该激光脉冲的光点直径为10um～150um。24. The light-emitting device of embodiment 23, wherein the laser pulse has a wavelength in the range of 800 nm to 1100 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
25、如实施方式18的发光装置，其中该第二界面层，是由至少一胶体直接接收聚焦的该激光脉冲的能量而形成。25. The illumination device of embodiment 18, wherein the second interfacial layer is formed by at least one colloid directly receiving energy of the focused laser pulse.
26、如实施方式25的发光装置，其中该激光脉冲的波长范围为800nm～1100nm，该激光脉冲的光点直径为10um～150um。26. The light-emitting device of embodiment 25, wherein the laser pulse has a wavelength in the range of 800 nm to 1100 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
27、如实施方式18的发光装置，其中该基板具有至少一贯孔经设置以贯穿该基板，该至少一贯孔具有一第一材料，其中该至少一接垫覆盖该至少一贯孔的一端并和该第一材料电性且导热性连接，其中该第一材料为导电及导热材料。 27. The light emitting device of embodiment 18, wherein the substrate has at least a uniform aperture disposed through the substrate, the at least consistent aperture having a first material, wherein the at least one pad covers one end of the at least consistent aperture and The first material is electrically and thermally conductively connected, wherein the first material is a conductive and thermally conductive material.
28、如实施方式27的发光装置，其中该第二界面层，是由至少一胶体接收聚焦于该至少一接垫的该激光脉冲的能量而形成的该第二界面层，以连接该至少一接垫和该至少一电极。The illuminating device of embodiment 27, wherein the second interface layer is formed by at least one colloid receiving the energy of the laser pulse focused on the at least one pad to connect the at least one layer a pad and the at least one electrode.
29、如实施方式28的发光装置，其中该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。29. The light-emitting device of embodiment 28, wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
30、如实施方式27的发光装置，其中该第二界面层，是由至少一胶体接收聚焦于该第一材料的该激光脉冲能量的能量而形成的第二界面层，以连接该至少一接垫和该至少一电极。The illuminating device of embodiment 27, wherein the second interface layer is a second interface layer formed by at least one colloid receiving energy of the laser pulse energy focused on the first material to connect the at least one interface a pad and the at least one electrode.
31、如实施方式30的发光装置，其中该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。31. The illumination device of embodiment 30, wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
32、如实施方式27的发光装置，其中该第二界面层，是由至少一胶体接收聚焦于该第一材料的位于该贯孔的另一端位置上的一裸面的该激光脉冲能量的能量而形成的该至少一第二界面层，以连接该至少一接垫和该至少一电极。32. The illuminating device of embodiment 27, wherein the second interface layer receives energy of the laser pulse energy focused by a at least one colloid on a bare surface of the first material at a position other than the end of the through hole. And forming the at least one second interface layer to connect the at least one pad and the at least one electrode.
33、如实施方式32的发光装置，其中该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。33. The illumination device of embodiment 32, wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
34、如实施方式27、30或32的发光装置，其中该第一材料包括金(Au)、银(Ag)或铜(Cu)。34. The illumination device of embodiment 27, 30 or 32, wherein the first material comprises gold (Au), silver (Ag) or copper (Cu).
35、如实施方式23、25、28、30或32的发光装置，其中该至少一胶体的材料包括助焊剂(Flux)、银(Ag)、锡(tin)或异方性导电膜(Anisotropic Conductive Film)。The illuminating device of embodiment 23, 25, 28, 30 or 32, wherein the at least one colloid material comprises flux (Flux), silver (Ag), tin (tin) or anisotropic conductive film (Anisotropic Conductive) Film).
36、一种发光装置的制造方法，包括:提供一基板，该基板具有至少一接垫；提供一发光芯片，该发光芯片具有至少一电极；对齐该至少一接垫及该至少一电极，使该至少一接垫与该至少一电极彼此接触；以及使用一激光脉冲，在该至少一接垫与该至少一电极的接触面形成一第一界面层。36. A method of fabricating a light emitting device, comprising: providing a substrate having at least one pad; providing a light emitting chip, the light emitting chip having at least one electrode; aligning the at least one pad and the at least one electrode The at least one pad is in contact with the at least one electrode; and a first interfacial layer is formed on the contact surface of the at least one pad with the at least one electrode by using a laser pulse.
37、如实施方式36的发光装置的制造方法，其中该基板的材料包括硅基板、印刷电路板(Printed Circuit Board)、陶瓷基板、金属基板、硅基板、铜基板、半导体基板、玻璃基板、线路基板或柔性印刷电路板(Flexible Print Circuit)。The method of manufacturing a light-emitting device according to Embodiment 36, wherein the material of the substrate comprises a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, and a wiring A substrate or a flexible printed circuit board (Flexible Print Circuit).
38、如实施方式36的发光装置的制造方法，其中该至少一接垫的材料包括金(Au)、金锡合金(Au-Sn)、镍-铂-银合金(Ni-Pt-Ag)或铜(Cu)。38. The method of manufacturing a light-emitting device according to Embodiment 36, wherein the material of the at least one pad comprises gold (Au), gold-tin alloy (Au-Sn), nickel-platinum-silver alloy (Ni-Pt-Ag) or Copper (Cu).
39、如实施方式36的发光装置的制造方法，其中该发光芯片为一发光二极管芯片或一激光二极管芯片。39. The method of manufacturing a light emitting device according to Embodiment 36, wherein the light emitting chip is a light emitting diode chip or a laser diode chip.
40、如实施方式36的发光装置的制造方法，其中该至少一电极的材料包括金(Au)或金锡合金(Au-Sn)。40. The method of manufacturing a light-emitting device according to embodiment 36, wherein the material of the at least one electrode comprises gold (Au) or gold-tin alloy (Au-Sn).
41、如实施方式36的发光装置的制造方法，其中在使用该激光脉冲的步骤中，该激光脉冲聚焦于该至少一电极，通过该至少一电极将该激光脉冲的能量传导至该至少一接垫 与该至少一电极的接触面，以形成该第一界面层。The method of manufacturing a light-emitting device according to Embodiment 36, wherein in the step of using the laser pulse, the laser pulse is focused on the at least one electrode, and the energy of the laser pulse is transmitted to the at least one through the at least one electrode Pad a contact surface with the at least one electrode to form the first interface layer.
42、如实施方式41的发光装置的制造方法，其中该激光脉冲的波长范围为800nm～1100nm，该激光脉冲的光点直径为10um～150um。42. The method of manufacturing a light-emitting device according to Embodiment 41, wherein the laser pulse has a wavelength in the range of 800 nm to 1100 nm, and the laser spot has a spot diameter of 10 um to 150 um.
43、如实施方式36的发光装置的制造方法，其中在使用该激光脉冲的步骤中，该激光脉冲聚焦于该至少一接垫与该至少一电极的接触面，以形成该第一界面层。43. A method of fabricating a light-emitting device according to embodiment 36, wherein in the step of using the laser pulse, the laser pulse is focused on a contact surface of the at least one pad and the at least one electrode to form the first interface layer.
44、如实施方式43的发光装置的制造方法，其中该激光脉冲的波长范围为800nm～1100nm，该激光脉冲的光点直径为10um～150um。The method of manufacturing a light-emitting device according to Embodiment 43, wherein the laser pulse has a wavelength in the range of 800 nm to 1100 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
45、如实施方式36的发光装置的制造方法，其中该基板经设置具有至少一贯孔以贯穿该基板，该至少一贯孔经设置具有一第一材料，其中该至少一接垫覆盖该至少一贯孔的一端开口并和该第一材料电性及导热性连接，其中该第一材料为导电及导热材料。The method of manufacturing a light-emitting device according to Embodiment 36, wherein the substrate is provided with at least a uniform hole penetrating the substrate, the at least one of the consistent holes being provided with a first material, wherein the at least one pad covers the at least one of the consistent holes One end is open and electrically connected to the first material, wherein the first material is an electrically conductive and thermally conductive material.
46、如实施方式45的发光装置的制造方法，其中在使用该激光脉冲的步骤中，该激光脉冲聚焦于该至少一接垫，通过该至少一接垫将该激光脉冲的能量传导至该至少一接垫与该至少一电极的接触面，以形成该第一界面层。The method of manufacturing a light-emitting device according to Embodiment 45, wherein in the step of using the laser pulse, the laser pulse is focused on the at least one pad, and the energy of the laser pulse is transmitted to the at least one pad through the at least one pad A pad is in contact with the at least one electrode to form the first interfacial layer.
47、如实施方式46的发光装置的制造方法，其中该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。47. A method of fabricating a light-emitting device according to embodiment 46, wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser spot has a spot diameter of 10 um to 150 um.
48、如实施方式45的发光装置的制造方法，其中该激光脉冲聚焦于该第一材料，通过该第一材料将该激光脉冲的能量传导至该至少一接垫与该至少一电极的接触面，以形成该第一界面层，其中该第一材料为导热材料。The method of manufacturing a light-emitting device according to Embodiment 45, wherein the laser pulse is focused on the first material, and the energy of the laser pulse is transmitted to the contact surface of the at least one pad and the at least one electrode by the first material Forming the first interface layer, wherein the first material is a thermally conductive material.
49、如实施方式48的发光装置的制造方法，其中该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。49. A method of fabricating a light-emitting device according to embodiment 48, wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
50、如实施方式45的发光装置的制造方法，其中在使用该激光脉冲的步骤中，该激光脉冲聚焦于该第一材料的位于该贯孔的另一端位置上的一裸面，通过该第一材料将该激光脉冲的能量传导至该至少一接垫与该至少一电极的接触面，以形成该第一界面层，其中该第一材料为导热材料。50. The method of manufacturing a light-emitting device according to Embodiment 45, wherein in the step of using the laser pulse, the laser pulse is focused on a bare surface of the first material at a position other than the end of the through hole, through the first A material conducts energy of the laser pulse to a contact surface of the at least one pad and the at least one electrode to form the first interface layer, wherein the first material is a thermally conductive material.
51、如实施方式50的发光装置的制造方法，其中该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。51. The method of manufacturing a light-emitting device according to embodiment 50, wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
52、如实施方式45、48或50的发光装置的制造方法，其中该第一材料包括金(Au)、银(Ag)或铜(Cu)。52. A method of fabricating a light emitting device according to embodiment 45, 48 or 50, wherein the first material comprises gold (Au), silver (Ag) or copper (Cu).
53、一种发光装置的制造方法，包括:提供一基板，该基板具有至少一接垫；提供一发光芯片，该发光芯片具有至少一电极；提供至少一胶体于该至少一接垫及该至少一电极之间；以及使用一激光脉冲，使该至少一胶体形成一第二界面层，以连接该至少一接垫和该至少一电极。53. A method of fabricating a light emitting device, comprising: providing a substrate having at least one pad; providing a light emitting chip, the light emitting chip having at least one electrode; providing at least one colloid to the at least one pad and the at least Between an electrode; and using a laser pulse, the at least one colloid forms a second interfacial layer to connect the at least one pad and the at least one electrode.
54、如实施方式53的发光装置的制造方法，其中该基板的材料包括硅基板、印刷电路板(Printed Circuit Board)、陶瓷基板、金属基板、硅基板、铜基板、半导体基板、 玻璃基板、线路基板或柔性印刷电路板(Flexible Print Circuit)。The method of manufacturing a light-emitting device according to Embodiment 53, wherein the material of the substrate comprises a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, Glass substrate, circuit substrate or flexible printed circuit board (Flexible Print Circuit).
55、如实施方式53的发光装置的制造方法，其中该至少一接垫的材料包括金(Au)、金锡合金(Au-Sn)、镍-铂-银合金(Ni-Pt-Ag)或铜(Cu)。The method of manufacturing a light-emitting device according to Embodiment 53, wherein the material of the at least one pad comprises gold (Au), gold-tin alloy (Au-Sn), nickel-platinum-silver alloy (Ni-Pt-Ag) or Copper (Cu).
56、如实施方式53的发光装置的制造方法，其中该发光芯片为一发光二极管。56. A method of fabricating a light emitting device according to embodiment 53, wherein the light emitting chip is a light emitting diode.
57、如实施方式53的发光装置的制造方法，其中该至少一电极的材料包括金(Au)或金锡合金(Au-Sn)。57. The method of fabricating a light-emitting device according to embodiment 53, wherein the material of the at least one electrode comprises gold (Au) or gold-tin alloy (Au-Sn).
58、如实施方式53的发光装置的制造方法，其中在该使用该激光派充的步骤中，该激光脉冲聚焦于该至少一电极，通过该至少一电极将该激光脉冲的能量传导至该至少一胶体，以形成该第二界面层。58. The method of manufacturing a light-emitting device according to Embodiment 53, wherein in the step of using the laser charge, the laser pulse is focused on the at least one electrode, and the energy of the laser pulse is transmitted to the at least one electrode through the at least one electrode a colloid to form the second interfacial layer.
59、如实施方式58的发光装置的制造方法，其中该激光脉冲的波长范围为800nm～1100nm，该激光脉冲的光点直径为10um～150um。59. A method of fabricating a light-emitting device according to embodiment 58, wherein the laser pulse has a wavelength in the range of 800 nm to 1100 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
60、如实施方式53的发光装置的制造方法，其中该激光脉冲聚焦于该至少一胶体，以形成该第二界面层。60. A method of fabricating a light emitting device according to embodiment 53, wherein the laser pulse is focused on the at least one colloid to form the second interfacial layer.
61、如实施方式60的发光装置的制造方法，其中该激光脉冲的波长范围为800nm～1100nm，该激光脉冲的光点直径为10um～150um。61. A method of fabricating a light-emitting device according to embodiment 60, wherein the laser pulse has a wavelength in the range of 800 nm to 1100 nm, and the laser spot has a spot diameter of 10 um to 150 um.
62、如实施方式53的发光装置的制造方法，其中该基板经设置具有至少一贯孔以贯穿该基板，该至少一贯孔经设置具有一第一材料，其中该至少一接垫覆盖该至少一贯孔的一端并和该第一材料电性及导热性连接，其中该第一材料为导电及导热材料。The method of manufacturing the illuminating device of Embodiment 53, wherein the substrate is provided with at least a uniform hole through the substrate, the at least one of the consistent holes being provided with a first material, wherein the at least one pad covers the at least one of the consistent holes One end is connected to the first material electrically and thermally, wherein the first material is a conductive and thermally conductive material.
63、如实施方式62的发光装置的制造方法，其中在该使用该激光派充的步骤中，该激光脉冲聚焦于该至少一接垫，通过该至少一接垫将该激光脉冲的能量传导至该至少一胶体，以形成该第二界面层。The method of manufacturing a light-emitting device according to Embodiment 62, wherein in the step of using the laser charging, the laser pulse is focused on the at least one pad, and the energy of the laser pulse is transmitted to the at least one pad to The at least one colloid forms the second interfacial layer.
64、如实施方式63的发光装置的制造方法，其中该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。64. The method of manufacturing a light-emitting device according to Embodiment 63, wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
65、如实施方式62的发光装置的制造方法，其中在该使用该激光派充的步骤中，该激光脉冲聚焦于该第一材料，通过该第一材料将该激光脉冲的能量传导至该至少一胶体，以形成该第二界面层，其中该第一材料为导热材料。65. The method of fabricating a light-emitting device according to embodiment 62, wherein in the step of using the laser charge, the laser pulse is focused on the first material, and the energy of the laser pulse is transmitted to the at least the first material a colloid to form the second interfacial layer, wherein the first material is a thermally conductive material.
66、如实施方式65的发光装置的制造方法，其中该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。66. A method of fabricating a light-emitting device according to embodiment 65, wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser spot has a spot diameter of 10 um to 150 um.
67、如实施方式62的发光装置的制造方法，其中在该使用该激光派充的步骤中，该激光脉冲聚焦于该第一材料的位于该贯孔的另一端位置上的裸面，通过该第一材料将该激光脉冲的能量传导至该至少一胶体，以形成该第二界面层，其中该第一材料为导热材料。67. The method of manufacturing a light-emitting device according to Embodiment 62, wherein in the step of using the laser charge, the laser pulse is focused on a bare surface of the first material at a position of the other end of the through hole, The first material conducts energy of the laser pulse to the at least one colloid to form the second interfacial layer, wherein the first material is a thermally conductive material.
68、如实施方式67的发光装置的制造方法，其中该激光脉冲的波长范围为300nm～1200nm，该激光脉冲的光点直径为10um～150um。68. The method of manufacturing a light-emitting device according to Embodiment 67, wherein the laser pulse has a wavelength in the range of 300 nm to 1200 nm, and the laser pulse has a spot diameter of 10 um to 150 um.
69、如实施方式62、65或67的发光装置的制造方法，其中该第一材料包括金(Au)、 银(Ag)或铜(Cu)。69. A method of fabricating a light emitting device according to embodiment 62, 65 or 67, wherein the first material comprises gold (Au), Silver (Ag) or copper (Cu).
70、如实施方式53的发光装置的制造方法，其中该至少一胶体的材料包括助焊剂(Flux)、银(Ag)、锡(tin)或异方性导电膜(Anisotropic Conductive Film)。70. The method of manufacturing a light-emitting device according to embodiment 53, wherein the at least one colloid material comprises a flux (Flux), silver (Ag), tin (tin) or an anisotropic conductive film (Anisotropic Conductive Film).
71、一种发光二极管，包括:一基板，具有一接垫；一发光二极管芯片，具有一电极；以及一激光烧灼改质层，形成于该接垫和该电极之间，以连接该接垫和该电极。71. A light emitting diode comprising: a substrate having a pad; an LED chip having an electrode; and a laser cauterization modifying layer formed between the pad and the electrode to connect the pad And the electrode.
72、一种发光二极管，包括:一基板，具有一接垫；一发光二极管芯片，具有一电极；以及一激光烧灼共晶层，形成于该接垫和该电极之间，以连接该接垫和该电极。72. A light emitting diode comprising: a substrate having a pad; an LED chip having an electrode; and a laser cauterization eutectic layer formed between the pad and the electrode to connect the pad And the electrode.
73、一种发光二极管，包括:一基板，具有一接垫；一发光二极管芯片，具有一电极；以及一激光烧灼焊接层，形成于该接垫和该电极之间，以连接该接垫和该电极。73. A light emitting diode comprising: a substrate having a pad; an LED chip having an electrode; and a laser cauterizing solder layer formed between the pad and the electrode to connect the pad and The electrode.
74、一种激光二极管，包括:一基板，具有一接垫；一激光二极管芯片，具有一电极；以及一激光烧灼改质层，形成于该接垫和该电极之间，以连接该接垫和该电极。74. A laser diode comprising: a substrate having a pad; a laser diode chip having an electrode; and a laser cauterization modifying layer formed between the pad and the electrode to connect the pad And the electrode.
75、一种激光二极管，包括:一基板，具有一接垫；一激光二极管芯片，具有一电极；以及一激光烧灼共晶层，形成于该接垫和该电极之间，以连接该接垫和该电极。75. A laser diode comprising: a substrate having a pad; a laser diode chip having an electrode; and a laser-fired eutectic layer formed between the pad and the electrode to connect the pad And the electrode.
76、一种激光二极管，包括:一基板，具有一接垫；一激光二极管芯片，具有一电极；以及一激光烧灼焊接层，形成于该接垫和该电极之间，以连接该接垫和该电极。76. A laser diode comprising: a substrate having a pad; a laser diode chip having an electrode; and a laser cauterizing solder layer formed between the pad and the electrode to connect the pad and The electrode.
77、一种发光二极管的制造方法，包括:提供一基板，该基板具有一接垫；提供一发光二极管芯片，该发光二极管芯片具有一电极；以及使用一激光脉冲，在该至少一接垫与该至少一电极的接触面形成一激光烧灼共晶层、或一激光烧灼改质层、或一激光烧灼焊接层。77. A method of fabricating a light emitting diode, comprising: providing a substrate having a pad; providing an LED chip, the LED chip having an electrode; and using a laser pulse at the at least one pad The contact surface of the at least one electrode forms a laser-fired eutectic layer, or a laser-fired modified layer, or a laser-fired solder layer.
78、一种激光二极管的制造方法，包括:提供一基板，该基板具有一接垫；提供一激光二极管芯片，该激光二极管芯片具有一电极；以及使用一激光脉冲，在该至少一接垫与该至少一电极的接触面形成一激光烧灼共晶层、或一激光烧灼改质层、或一激光烧灼焊接层。78. A method of fabricating a laser diode, comprising: providing a substrate having a pad; providing a laser diode chip having an electrode; and using a laser pulse at the at least one pad The contact surface of the at least one electrode forms a laser-fired eutectic layer, or a laser-fired modified layer, or a laser-fired solder layer.
79、一种发光二极管的制造方法，包括:提供一基板，该基板具有一接垫；提供一发光二极管芯片，该发光二极管芯片具有一电极；以及使用一激光脉冲固晶方式，使得该电极与该接垫结构性连接且电性连接。79. A method of fabricating a light emitting diode, comprising: providing a substrate having a pad; providing an LED chip, the LED chip having an electrode; and using a laser pulse die bonding method to make the electrode The pads are structurally connected and electrically connected.
80、一种激光二极管的制造方法，包括:提供一基板，该基板具有一接垫；提供一激光二极管芯片，该激光二极管芯片具有一电极；以及使用一激光脉冲固晶方式，使得该电极与该接垫结构性连接且电性连接。80. A method of fabricating a laser diode, comprising: providing a substrate having a pad; providing a laser diode chip having an electrode; and using a laser pulse die bonding method to cause the electrode to The pads are structurally connected and electrically connected.
本发明提供一种用于在主动矩阵(Active Matrix,AM)面板上制造单片发光二极管(LED)微型显示面板，包括多个LED像素，每个LED像素包括n电极和p电极，排列成矩阵状的LED像素；多个行和多个列，矩阵的一行中的LED像素的n个电极电连接到总线，每个LED像素的p电极单独电连接到在AM面板上的对应的驱动电路的输出。其制造方法包括：提供LED微显示面板的基板；在衬底的表面上覆盖多层材料，其中多个材料覆盖层 组合配置以在激活时发光；通过将每个覆盖层的一部分一直下移到衬底的表面来图案化多个覆盖层的材料；在衬底的材料和表面的图案化的多个覆盖层上沉积电流扩散层；在电流扩展层上提供金属多层；以金属多层的位于图案化的多个重叠层上的第一部分和位于基板表面上的金属多层的第二部分的形式图案化金属多层，并导电地断开从而形成单片LED微显示面板；在所述AM面板的表面上提供多个主动控制电路；和使用导电焊料材料将单片LED微显示面板与AM面板组合在一起，其中每个单片LED彼此电绝缘并且由与其连接的对应的主动控制电路芯片独立地控制，与多个主动控制电路结合单片LED，使得多个主动控制电路中的每一个经由焊料材料与LED微阵列板的单片LED中的一个组合，其中AM面板，像素尺寸和形状对应于LED像素。The invention provides a method for manufacturing a monolithic light emitting diode (LED) micro display panel on an active matrix (AM) panel, comprising a plurality of LED pixels, each LED pixel comprising an n electrode and a p electrode arranged in a matrix LED pixels; a plurality of rows and a plurality of columns, n electrodes of LED pixels in a row of the matrix are electrically connected to the bus, and the p electrodes of each LED pixel are individually electrically connected to corresponding driving circuits on the AM panel Output. The manufacturing method comprises: providing a substrate of an LED micro display panel; covering a surface of the substrate with a plurality of materials, wherein the plurality of material covering layers Combining the configurations to illuminate upon activation; patterning the material of the plurality of capping layers by moving a portion of each cap layer down to the surface of the substrate; on the patterned plurality of capping layers of the material and surface of the substrate Depositing a current diffusion layer; providing a metal multilayer on the current spreading layer; patterning the metal in the form of a first portion of the metal multilayer on the patterned plurality of overlapping layers and a second portion of the metal multilayer on the surface of the substrate Multi-layered and electrically disconnected to form a monolithic LED microdisplay panel; providing a plurality of active control circuits on the surface of the AM panel; and combining a single LED microdisplay panel with an AM panel using a conductive solder material Each of the individual LEDs is electrically insulated from each other and independently controlled by a corresponding active control circuit chip connected thereto, and a plurality of active control circuits are combined with the single-chip LED such that each of the plurality of active control circuits is via solder material One of the monolithic LEDs of the LED microarray board, where the AM panel, the pixel size and shape correspond to the LED pixels.
上述内容仅为例示性的，而并非旨在以任何方式进行限制。以上所述的目的、技术效果、例示性实施方式及技术特征可与以下所述的实施方式相互参照。The above is merely illustrative and is not intended to be limiting in any way. The above objects, technical effects, exemplary embodiments, and technical features can be cross-referenced with the embodiments described below.
附图说明DRAWINGS
图1A为本发明的第一较佳实施例的显示装置的结构示意图。1A is a schematic structural view of a display device according to a first preferred embodiment of the present invention.
图1B为本发明的第一较佳实施例的显示装置的电路示意图。1B is a circuit diagram of a display device according to a first preferred embodiment of the present invention.
图2A至图2H为本发明的第一较佳实施例的显示装置的发光二极管矩阵的制程示意图。2A to 2H are schematic diagrams showing the process of a light emitting diode matrix of a display device according to a first preferred embodiment of the present invention.
图3A至图3H为本发明的第一较佳实施例的显示装置的发光二极管矩阵的制程示意图。3A to 3H are schematic diagrams showing the process of a light emitting diode matrix of a display device according to a first preferred embodiment of the present invention.
图4A至图4G为本发明的第二较佳实施例的显示装置的结构示意图。4A to 4G are schematic diagrams showing the structure of a display device according to a second preferred embodiment of the present invention.
图5A至图5D为本发明的第二较佳实施例的萤光体矩阵的制程示意图。5A to 5D are schematic views showing the process of a phosphor matrix according to a second preferred embodiment of the present invention.
图6A至图6E为本发明的第二较佳实施例的萤光体矩阵的制程示意图。6A-6E are schematic diagrams showing the process of a phosphor matrix according to a second preferred embodiment of the present invention.
图7A至图7C为本发明的第二较佳实施例的显示装置的结构侧视图。7A to 7C are side views showing the structure of a display device according to a second preferred embodiment of the present invention.
图8A至图8C为本发明的第二较佳实施例的显示装置的结构侧视图。8A to 8C are side views showing the structure of a display device according to a second preferred embodiment of the present invention.
图9A至图9C为本发明的第二较佳实施例的显示装置的结构侧视图。9A to 9C are side views showing the structure of a display device according to a second preferred embodiment of the present invention.
图10为本发明的第三较佳实施例的发光装置的结构示意图，该微型发光装置具有垂直结构。Figure 10 is a schematic view showing the structure of a light-emitting device according to a third preferred embodiment of the present invention, the micro-light-emitting device having a vertical structure.
图11A至图11F为本发明的第三较佳实施例的发光装置的结构示意图，该微型发光装置具有覆晶结构，其中图11C及图11D显示出发光二极管条的金属电极，其中图11E及图11F显示出发光二极管条受激光切割。11A to FIG. 11F are schematic diagrams showing the structure of a light-emitting device according to a third preferred embodiment of the present invention. The micro-light-emitting device has a flip-chip structure, and FIGS. 11C and 11D show metal electrodes of the light-emitting diode strips, wherein FIG. 11E and FIG. Figure 11F shows the LED strip being laser cut.
图12A为本发明的第三较佳实施例的发光装置的结构示意图，该微型发光装置具有水平结构，且使用导电金属条连接。12A is a schematic view showing the structure of a light-emitting device according to a third preferred embodiment of the present invention, which has a horizontal structure and is connected using a conductive metal strip.
图12B为本发明的第三较佳实施例的发光装置的结构示意图，该微型发光装置具有水平结构，且使用打线连接。 12B is a schematic structural view of a light-emitting device according to a third preferred embodiment of the present invention, the micro-light-emitting device having a horizontal structure and connected by wire bonding.
图13为本发明的第三较佳实施例的发光装置的结构示意图，该微型发光装置具有垂直水平结构，且使用ITO的导电玻璃线路连接。Figure 13 is a schematic view showing the structure of a light-emitting device according to a third preferred embodiment of the present invention, which has a vertical horizontal structure and is connected by a conductive glass line of ITO.
图14为本发明的第三较佳实施例的发光装置的电路方块图。Figure 14 is a circuit block diagram of a light emitting device according to a third preferred embodiment of the present invention.
图15A及图15B为本发明的第四较佳实施例的发光装置的示意图，其显示不同的激光脉冲聚焦位置。15A and 15B are schematic views of a light-emitting device according to a fourth preferred embodiment of the present invention, showing different laser pulse focus positions.
图16A至图16C为本发明的第四较佳实施例的发光装置的示意图，其显示不同的激光脉冲聚焦位置。16A to 16C are schematic views of a light-emitting device according to a fourth preferred embodiment of the present invention, which show different laser pulse focus positions.
图17A及图17B为本发明的第四较佳实施例的发光装置的示意图，其显示不同的激光脉冲聚焦位置。17A and 17B are schematic views of a light-emitting device according to a fourth preferred embodiment of the present invention, showing different laser pulse focus positions.
图18A至图18C为本发明的第四较佳实施例的发光装置的示意图，其显示不同的激光脉冲聚焦位置。18A to 18C are schematic views of a light-emitting device according to a fourth preferred embodiment of the present invention, showing different laser pulse focus positions.
附图标记说明：Description of the reference signs:
10 显示装置10 display device
11 萤光体矩阵11 phosphor matrix
11R、11G、11B 萤光体像素11R, 11G, 11B phosphor pixels
12 发光二极管矩阵12 LED matrix
120 发光二极管像素120 LED pixels
12A 上表面12A upper surface
12B 下表面12B lower surface
121 第二极性半导体层121 second polarity semiconductor layer
122 第一极性半导体层122 first polarity semiconductor layer
123 量子井发光结构123 quantum well light structure
124 金属导通层124 metal conduction layer
125 非导电载体基板125 non-conductive carrier substrate
126 第一蚀刻沟槽126 first etching trench
127 第二蚀刻沟槽127 second etching trench
128 绝缘层、屏蔽层128 insulation layer, shielding layer
129 导体线路129 conductor line
20 矩阵式电路20 matrix circuit
21 阳极串联的发光二极管像素21 anodes in series with LED pixels
22 负极串联的发光二极管像素22 LEDs with negative electrodes connected in series
30 显示装置30 display device
31 萤光体矩阵31 phosphor matrix
31R、31G、31B 萤光体像素 31R, 31G, 31B phosphor pixels
312 屏蔽层312 shield
32 发光二极管矩阵32 LED matrix
32A 上表面32A upper surface
321 第二极性半导体321 second polarity semiconductor
322 第一极性半导体层322 first polarity semiconductor layer
323 量子井发光结构323 quantum well light structure
324 金属导通层324 metal conduction layer
325 非导电载体基板325 non-conductive carrier substrate
326、327 蚀刻沟槽326, 327 etch trench
328 绝缘层328 insulation
329 导体线路329 conductor line
X 列方向X column direction
Y 行方向Y row direction
2010 显示装置2010 display device
2011 萤光体矩阵2011 Fluorescent Matrix
20111R 第一萤光体20111R first phosphor
20112G 第二萤光体20112G second phosphor
20113Y、20113B 第三萤光体20113Y, 20113B third phosphor
20114 透光部20114 Translucent Department
2012 发光二极管矩阵2012 LED matrix
20400 透光基板20400 transparent substrate
2000 基座、第二基座2000 base, second base
2001、2002、2003 第二走线Second line of 2001, 2002, 2003
2004、2005、2006、2021、2022、2023 第一走线2004, 2005, 2006, 2021, 2022, 2023 first trace
2007 第一发光二极管条2007 first LED strip
2008 第二发光二极管条2008 second LED strip
2009 第三发光二极管条2009 third LED strip
2007A、2007A1、2007A2、2007A3、2008A、2008A1、2008A2、2008A3、2009A、2009A1、2009A2、2009A3 第一金属电极2007A, 2007A1, 2007A2, 2007A3, 2008A, 2008A1, 2008A2, 2008A3, 2009A, 2009A1, 2009A2, 2009A3 First metal electrode
2007B、2007B1、2007B2、2007B3、2008B、2009B 第二金属电极2007B, 2007B1, 2007B2, 2007B3, 2008B, 2009B second metal electrode
2011、2012、2013、2017、2018、2019 打线2011, 2012, 2013, 2017, 2018, 2019
2014、2015、2016 导电金属条2014, 2015, 2016 conductive metal strip
2020 第一基座2020 first base
2024、2025、2026 像素 2024, 2025, 2026 pixels
2100 第一方向2100 first direction
2200 第二方向2200 second direction
2301、2302、2303 磊晶基板2301, 2302, 2303 epitaxial substrate
2401、2402、2403 半导体磊晶层2401, 2402, 2403 semiconductor epitaxial layer
2500 切割区2500 cutting area
2601 扫描电路2601 scanning circuit
2602 数据电路2602 data circuit
2601-1、2601-2、2601-3 扫描走线2601-1, 2601-2, 2601-3 scan trace
2602-1、2602-2、2602-3 数据走线2602-1, 2602-2, 2602-3 data trace
100、200、300、400 发光装置100, 200, 300, 400 light-emitting devices
110、210、310、410 基板110, 210, 310, 410 substrates
111、211、311、411 接垫111, 211, 311, 411 pads
120、220、320、420 发光芯片120, 220, 320, 420 light-emitting chips
121、221、321、421 电极121, 221, 321, 421 electrodes
130、230 界面层、第一界面层130, 230 interface layer, first interface layer
151、152、153、154、155、351、352、353、354、355 激光脉冲151, 152, 153, 154, 155, 351, 352, 353, 354, 355 laser pulses
213、413 贯孔213, 413 through holes
214、414 材料214,414 materials
330、430 界面层、第二界面层330, 430 interface layer, second interface layer
331、431 胶体331, 431 colloid
具体实施方式detailed description
请参阅图1A所示，其显示了依据本发明的第一较佳实施例的显示装置的一实施方式的结构示意图。显示装置10可做为微型矩阵式显示装置(例如是微型发光二极管显示装置，Micro LED Display Device)，其可包括一发光二极管矩阵12及一萤光体矩阵11，相互搭配并形成多个像素/像素，每个像素/像素都有对应的发光二极管及萤光体，发光二极管矩阵12是于一晶圆(磊晶)基板上直接形成，而不是将多个LED芯片移转排列而成，故可避免巨量移转所遭遇的困难或问题。另外，发光二极管矩阵12的电路亦是直接于晶圆基板上形成。发光二极管矩阵12可为一垂直电流导通的结构。更具体的技术内容将说明如下。Referring to FIG. 1A, there is shown a schematic structural view of an embodiment of a display device in accordance with a first preferred embodiment of the present invention. The display device 10 can be used as a micro-matrix display device (for example, a micro LED display device), which can include an LED matrix 12 and a phosphor matrix 11 to match each other and form a plurality of pixels/ Pixels, each pixel/pixel has a corresponding LED and a phosphor, and the LED matrix 12 is formed directly on a wafer (epitaxial) substrate instead of moving a plurality of LED chips. It can avoid the difficulties or problems encountered in massive transfer. In addition, the circuit of the LED matrix 12 is also formed directly on the wafer substrate. The LED matrix 12 can be a vertical current conducting structure. More specific technical content will be explained below.
请先参阅图2A，发光二极管矩阵12是于一晶圆基板(包含蓝宝石、Si、SiC、GaN基板)上形成包含一第一极性半导体层122、一第二极性半导体层121及一量子井发光结构层123(包含单重量子井、多重量子井或量子点发光结构)的磊晶结构(例如以MOCVD或MBE磊晶制程完成)，而量子井发光结构层123设置于第一极性半导体层122及第二极性半导 体层121之间。第一极性半导体层122及第二极性半导体层121可分别为一P极半导体层及一N极半导体层，亦可分别为一N极半导体层及一P极半导体层。Referring to FIG. 2A, the LED matrix 12 is formed on a wafer substrate (including sapphire, Si, SiC, GaN substrate) including a first polarity semiconductor layer 122, a second polarity semiconductor layer 121, and a quantum. The epitaxial structure of the well light-emitting structure layer 123 (including a single-weight sub-well, a multiple quantum well or a quantum dot light-emitting structure) (for example, completed by an MOCVD or MBE epitaxial process), and the quantum well light-emitting structure layer 123 is disposed at the first polarity Semiconductor layer 122 and second polarity semiconductor Between the body layers 121. The first polarity semiconductor layer 122 and the second polarity semiconductor layer 121 may be a P-pole semiconductor layer and an N-polar semiconductor layer, respectively, or may be an N-pole semiconductor layer and a P-pole semiconductor layer, respectively.
氮化物半导体层可作第一极性半导体层122或第二极性半导体层121，氮化物半导体层可包括作为主要元素的氮化镓(GaN)及作为添加元素的铟(In)及/或铝(Al)及/或硼(B)，以实现发射包括蓝色或UV(包含UVA、UVB、UVC)等不同颜色的光的高功率输出发光二极管。另，一金属导通层124形成于第二极性半导体层121的下表面，两者相电性连接；金属导通层124布满第二极性半导体层121的下表面。The nitride semiconductor layer may be the first polar semiconductor layer 122 or the second polar semiconductor layer 121, and the nitride semiconductor layer may include gallium nitride (GaN) as a main element and indium (In) as an additive element and/or Aluminum (Al) and/or boron (B) to achieve high power output light emitting diodes emitting light of different colors including blue or UV (including UVA, UVB, UVC). In addition, a metal conduction layer 124 is formed on the lower surface of the second polarity semiconductor layer 121, and the two are electrically connected; the metal conduction layer 124 is covered with the lower surface of the second polarity semiconductor layer 121.
请参阅图2B，将上述的磊晶结构放置于一非导电载体基板125，使得金属导通层124的下表面(即发光二极管矩阵12的下表面12B，参图2A所示)接触非导电载体基板125。非导电载体基板125可为尖晶石(Spinnel)、碳化硅(SiC)或蓝宝石(Sapphire)材质的基板，亦可是陶瓷基板，具有电性绝缘的特性且由陶瓷材质组成，陶瓷材质如氧化铝、氮化铝、氧化锆以及氟化钙其中之一者。非导电载体基板125也可是玻璃或聚酰亚胺(Polyimide)，以实现柔柔性质。然而，非导电载体基板125还可使用任何适当的绝缘和柔性材料。Referring to FIG. 2B, the epitaxial structure is placed on a non-conductive carrier substrate 125 such that the lower surface of the metal conduction layer 124 (ie, the lower surface 12B of the LED matrix 12, as shown in FIG. 2A) contacts the non-conductive carrier. Substrate 125. The non-conductive carrier substrate 125 may be a substrate made of spinel, silicon carbide (SiC) or sapphire, or a ceramic substrate, and has electrical insulating properties and is composed of a ceramic material such as alumina. One of aluminum nitride, zirconium oxide and calcium fluoride. The non-conductive carrier substrate 125 may also be glass or polyimide to achieve a flexible nature. However, the non-conductive carrier substrate 125 can also use any suitable insulating and flexible material.
请参阅图2C，对放置于非导电载体基板125的磊晶结构及金属导通层124进行蚀刻(例如干蚀刻、湿蚀刻、RIE蚀刻、PEC蚀刻、等向性蚀刻或非等向性蚀刻)，以将完整的磊晶结构及金属导通层124区分成多个行状结构。也就是，通过蚀刻制程，将部分的磊晶结构由其上表面12A移除至其下表面12B(参图2A)，以形成露出非导电载体基板125的第一蚀刻沟槽126，该第一蚀刻沟槽126沿着一行方向Y延伸。请参阅图2D，接着进行另一蚀刻制程(例如干蚀刻、湿蚀刻、RIE蚀刻、PEC蚀刻、等向性蚀刻或非等向性蚀刻)，沿着一列方向X移除磊晶结构，以形成露出第二极性半导体层121的上表面的第二蚀刻沟槽127；列方向X与行方向Y垂直交错。Referring to FIG. 2C, the epitaxial structure and the metal conduction layer 124 disposed on the non-conductive carrier substrate 125 are etched (eg, dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching). To separate the complete epitaxial structure and the metal conduction layer 124 into a plurality of row structures. That is, a portion of the epitaxial structure is removed from its upper surface 12A to its lower surface 12B (see FIG. 2A) by an etching process to form a first etched trench 126 exposing the non-conductive carrier substrate 125, the first The etched trenches 126 extend along a row of directions Y. Referring to FIG. 2D, another etching process (eg, dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching) is performed to remove the epitaxial structure along a column of directions X to form The second etched trenches 127 exposing the upper surface of the second polar semiconductor layer 121; the column direction X is vertically staggered with the row direction Y.
藉由通过不同延伸方向的第一及第二蚀刻沟槽126、127，可将磊晶结构形成为多个排列成矩阵的发光二极管像素120，该等发光二极管像素120的每一个包含第一极性半导体层122、第二极性半导体121及量子井发光结构层123。沿着列方向X，该等发光二极管像素120以第一蚀刻沟槽126相分隔，因此，位于同一列上的相邻发光二极管像素120无论是第一极性半导体层122、第二极性半导体121及量子井发光结构层123皆不会相连接、接触、导通。沿着行方向Y，该等发光二极管像素120的第一极性半导体层122及量子井发光结构层123以第二蚀刻127沟槽相分隔，但第二极性半导体层121仍相连接；因此，位于同一行上的相邻发光二极管像素120仅有第二极性半导体层121相连接。The epitaxial structure can be formed into a plurality of light emitting diode pixels 120 arranged in a matrix by using the first and second etching trenches 126, 127 in different extending directions, each of the light emitting diode pixels 120 including the first pole The semiconductor layer 122, the second polarity semiconductor 121, and the quantum well light-emitting structure layer 123. The LED pixels 120 are separated by the first etching trench 126 along the column direction X. Therefore, the adjacent LED pixels 120 on the same column are the first polarity semiconductor layer 122 and the second polarity semiconductor. 121 and the quantum well light-emitting structure layer 123 are not connected, contacted, or turned on. The first polar semiconductor layer 122 and the quantum well light emitting structure layer 123 of the LED pixels 120 are separated by the second etching 127 trenches along the row direction Y, but the second polar semiconductor layer 121 is still connected; The adjacent LED pixels 120 on the same row are only connected to the second polarity semiconductor layer 121.
金属导通层124亦被第一蚀刻沟槽126区分为多个金属导通层124，每一个金属导通层124沿着行方向Y延伸、且形成于发光二极管像素120的第二极性半导体121下，并电性连接至第二极性半导体121。位于同一行的发光二极管像素120的第二极性半导体121连接至同一个金属导通层124。 The metal conduction layer 124 is also divided into a plurality of metal conduction layers 124 by the first etching trenches 126 , and each of the metal conduction layers 124 extends along the row direction Y and is formed in the second polarity semiconductor of the LED pixels 120 . 121, and electrically connected to the second polarity semiconductor 121. The second polarity semiconductors 121 of the LED pixels 120 located in the same row are connected to the same metal conduction layer 124.
每一个发光二极管像素120可产生极好亮度的光线，且可具有较小的尺寸，以形成单独的像素(像素)。每一个发光二极管像素120的上表面12A可具有矩形或正方形形状，具有50μm或更小的一条边(例如10μm)。因此，在具有600μm的一条边和300μm的另一条边的发光二极管矩阵12中，发光二极管像素120之间的距离足以实现柔性显示装置。Each of the LED pixels 120 can produce light of excellent brightness and can be of a smaller size to form individual pixels (pixels). The upper surface 12A of each of the light emitting diode pixels 120 may have a rectangular or square shape with one side (for example, 10 μm) of 50 μm or less. Therefore, in the light emitting diode matrix 12 having one side of 600 μm and the other side of 300 μm, the distance between the light emitting diode pixels 120 is sufficient to realize a flexible display device.
请参阅图2E及图2F，发光二极管矩阵12还包括一绝缘层128。绝缘层128可通过蒸镀等制程形成于非导电载体基板125上，且覆盖第一蚀刻沟槽126以及第二蚀刻沟槽127；尚可通过蚀刻(例如干蚀刻、湿蚀刻、RIE蚀刻、PEC蚀刻、等向性蚀刻或非等向性蚀刻)、研磨、削薄或平坦化等制程移除覆盖于第一极性半导体层122上的绝缘层128，以裸露出第一极性半导体层122的上表面12A。绝缘层128可作为屏蔽层，以使各发光二极管像素120保持隔离。根据显示装置的功能，屏蔽层128可以包括黑色绝缘材料或白色绝缘材料；当使用包括白色绝缘材料的屏蔽层128时，可以提高反射率；当使用包括黑色绝缘材料的屏蔽层128时，可以在具有反射率的同时提高对比率。Referring to FIG. 2E and FIG. 2F, the LED matrix 12 further includes an insulating layer 128. The insulating layer 128 can be formed on the non-conductive carrier substrate 125 by a process such as evaporation, and covers the first etch trench 126 and the second etch trench 127; and can also be etched (for example, dry etching, wet etching, RIE etching, PEC) The process of etching, isotropic etching or anisotropic etching, polishing, thinning or planarization removes the insulating layer 128 overlying the first polar semiconductor layer 122 to expose the first polar semiconductor layer 122 Upper surface 12A. The insulating layer 128 can serve as a shielding layer to keep the respective LED pixels 120 isolated. The shielding layer 128 may include a black insulating material or a white insulating material according to the function of the display device; when a shielding layer 128 including a white insulating material is used, the reflectance may be improved; when the shielding layer 128 including a black insulating material is used, It has a reflectivity while increasing the contrast ratio.
请参阅图2G，发光二极管矩阵12还包括多个导体线路129，其沿着列方向X延伸形成于发光二极管像素120的第一极性半导体122的上表面12A上，且分别电性连接该第一极性半导体122。也就是，位于同一列上的发光二极管像素120的第二极性半导体121连接至同一个导体线路129。导体线路129与金属导通层124的延伸方向相垂直，以构成一矩阵式电路20(如图1B所示)，电路20包含多个阳极串联的发光二极管像素120(通过导体线路129实现)21及多个负极串联的发光二极管像素120(通过金属导通层124实现)22。通过施加电能至不同的导体线路129与金属导通层124，可使特定位址上的发光二极管像素120产生光线。Referring to FIG. 2G, the LED matrix 12 further includes a plurality of conductor lines 129 extending along the column direction X formed on the upper surface 12A of the first polar semiconductor 122 of the LED pixel 120, and electrically connected to the first A polar semiconductor 122. That is, the second polarity semiconductors 121 of the LED pixels 120 on the same column are connected to the same conductor line 129. The conductor line 129 is perpendicular to the direction in which the metal conduction layer 124 extends to form a matrix circuit 20 (shown in FIG. 1B). The circuit 20 includes a plurality of LED pixels 120 connected in series (through the conductor line 129). And a plurality of LED pixels 120 (implemented by the metal conduction layer 124) 22 connected in series with the cathode. By applying electrical energy to the different conductor lines 129 and the metal conduction layer 124, the LED pixels 120 at a particular address can be rendered light.
请参阅图2H，萤光体矩阵11设置于发光二极管矩阵12的上表面12A上，且包括多个萤光体像素11R、11G、11B，该等萤光体像素11R、11G、11B分别对应于该等发光二极管像素120。萤光体矩阵11可为一萤光贴片，可包括构成单独的像素的红色萤光粉和绿色萤光粉。也就是，在红色的萤光体像素11R处，可在发光二极管像素120上形成可将蓝光转换成红光的红色萤光粉；在绿色的萤光体像素11G处，可在发光二极管像素120上形成可将蓝光转换成绿光的绿色萤光粉。另外，在蓝色的萤光体像素11B处，可单独设置发光二极管像素120。在这种情况下，红色、绿色及蓝色的萤光体像素11R、11G、11B可构成一个像素组。同时，如果需要，发光二极管像素120可为包括黄色萤光粉的白色发光二极管；在此情况下，可将红色萤光粉、绿色萤光粉和蓝色萤光粉布置在白色发光二极管上，以形成像素。此外，可在萤光粉之间布置黑色的屏蔽层，以增加对比率。因此，可通过将红色萤光粉和绿色萤光粉应用于蓝色半导体的发光二极管来设计其中红色(R)像素、绿色(G)像素和蓝色(B)像素构成一个图元的全彩显示装置。每个像素可以包含红色、绿色、蓝色、黄色及白色的任意组合。每个像素可以包含可见光及不可见光的任意组合。 Referring to FIG. 2H, the phosphor matrix 11 is disposed on the upper surface 12A of the LED matrix 12, and includes a plurality of phosphor pixels 11R, 11G, and 11B, and the phosphor pixels 11R, 11G, and 11B respectively correspond to The LED pixels 120. The phosphor matrix 11 can be a fluorescent patch that can include red phosphors and green phosphors that make up individual pixels. That is, at the red phosphor pixel 11R, a red phosphor that converts blue light into red light may be formed on the light emitting diode pixel 120; at the green phosphor pixel 11G, the light emitting diode pixel 120 may be A green phosphor that converts blue light into green light is formed thereon. Further, at the blue phosphor pixel 11B, the light emitting diode pixels 120 may be separately provided. In this case, the red, green, and blue phosphor pixels 11R, 11G, and 11B may constitute one pixel group. Meanwhile, if necessary, the LED pixel 120 may be a white light emitting diode including yellow phosphor powder; in this case, the red phosphor powder, the green phosphor powder, and the blue phosphor powder may be disposed on the white light emitting diode. To form a pixel. In addition, a black shielding layer may be disposed between the phosphors to increase the contrast ratio. Therefore, a red color (R) pixel, a green (G) pixel, and a blue (B) pixel can be designed to form a full color of a picture by applying red phosphor and green phosphor to a blue semiconductor light emitting diode. Display device. Each pixel can contain any combination of red, green, blue, yellow, and white. Each pixel can comprise any combination of visible light and invisible light.
萤光体矩阵11所包含的萤光粉可由具高稳定发光特性的材料所制成，例如石榴石是(Ganet)、硫化物(Sulfate)、氮化物(Nitrate)、硅酸盐(Silicate)、铝酸盐(Aluminate)或其上述材料的任意组合，但不以此为限，其所产生的光线波长约为300nm至700nm；此外，萤光粉的粒径为1～25μm。The phosphor powder contained in the phosphor matrix 11 can be made of a material having high stable light-emitting characteristics, for example, garnet is (Ganet), sulfide (Sulfate), nitride (Nitrate), silicate (Silicate), Aluminate or any combination thereof, but not limited thereto, produces a light having a wavelength of about 300 nm to 700 nm; and the phosphor powder has a particle diameter of 1 to 25 μm.
萤光体矩阵11为萤光贴片时，其制法大致包括以下步骤：首先，将萤光粉混入可透光的硅胶，并利用均质机使萤光粉与硅胶混合均匀形成一胶体；接着，以喷涂或湿式涂布的方式把该胶体成型于可撕除的透光基材上，即形成一萤光胶层；然后，对萤光胶层进行预测试，使色温达到目标色温，再于萤光胶层表面涂覆一层厚度为50～200μm的透明硅胶，即形成萤光贴片。When the phosphor matrix 11 is a fluorescent patch, the method generally comprises the following steps: first, mixing the phosphor powder into the transparent light-transmitting silica gel, and mixing the phosphor powder and the silica gel by a homogenizer to form a colloid; Then, the colloid is formed on the peelable transparent substrate by spraying or wet coating to form a phosphor layer; then, the phosphor layer is pre-tested to achieve the target color temperature. A transparent silica gel having a thickness of 50 to 200 μm is further coated on the surface of the phosphor layer to form a fluorescent patch.
请参阅图3A至图3D所示，于另一实施方式中，显示装置30所包含的发光二极管矩阵32可为水平导通的结构。如图3A所示，发光二极管矩阵32包含相堆迭的第一极性半导体层322、量子井发光结构层323、第二极性半导体321及非导电载体基板325。如图3B所示，将部分的磊晶结构移除，例如通过蚀刻(包含干蚀刻、湿蚀刻、RIE蚀刻、PEC蚀刻、等向性蚀刻或非等向性蚀刻)方式进行，以形成沿着行方向Y延伸的蚀刻沟槽326，该蚀刻沟槽326使非导电载体基板325的上表面暴露出。然后，如图3C所示，再将部分的磊晶结构移除，例如通过蚀刻(包含干蚀刻、湿蚀刻、RIE蚀刻、PEC蚀刻、等向性蚀刻或非等向性蚀刻)方式进行，以形成沿着行方向Y及列方向X延伸的蚀刻沟槽327，该蚀刻沟槽327使第二极性半导体321的上表面暴露出；如此，沿着列方向X，第二极性半导体321的宽度大于第一极性半导体322的宽度。尔后，如图3D所示，形成多个沿着行方向Y延伸的金属导通层324于暴露出的第二极性半导体321的上表面。Referring to FIG. 3A to FIG. 3D , in another embodiment, the LED matrix 32 included in the display device 30 may be a horizontally conductive structure. As shown in FIG. 3A, the LED matrix 32 includes a first polarity semiconductor layer 322, a quantum well light emitting structure layer 323, a second polarity semiconductor 321 and a non-conductive carrier substrate 325 stacked. As shown in FIG. 3B, a portion of the epitaxial structure is removed, for example, by etching (including dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching) to form along An etched trench 326 extending in the row direction Y, the etched trench 326 exposing the upper surface of the non-conductive carrier substrate 325. Then, as shown in FIG. 3C, a portion of the epitaxial structure is removed, for example, by etching (including dry etching, wet etching, RIE etching, PEC etching, isotropic etching, or anisotropic etching) to Forming an etched trench 327 extending along the row direction Y and the column direction X, the etched trench 327 exposing the upper surface of the second polar semiconductor 321; thus, along the column direction X, the second polar semiconductor 321 The width is greater than the width of the first polarity semiconductor 322. Thereafter, as shown in FIG. 3D, a plurality of metal conduction layers 324 extending in the row direction Y are formed on the exposed upper surface of the second polar semiconductor 321.
如图3E及图3F所示，形成一绝缘层328来覆盖蚀刻沟槽326及327，并暴露出第一极性半导体322的上表面，但第二极性半导体321及金属导通层324的上表面被遮蔽。如图3G所示，形成多个沿着列方向X延伸的导体线路329于第一极性半导体322的上表面。As shown in FIG. 3E and FIG. 3F, an insulating layer 328 is formed to cover the etching trenches 326 and 327, and the upper surface of the first polarity semiconductor 322 is exposed, but the second polarity semiconductor 321 and the metal conduction layer 324 are The upper surface is covered. As shown in FIG. 3G, a plurality of conductor lines 329 extending in the column direction X are formed on the upper surface of the first polar semiconductor 322.
请参阅图3H，发光二极管矩阵32的上表面32A上，可设置一萤光体矩阵31(可为萤光贴片)。萤光体矩阵31除了包含不同颜色的萤光体像素31R、31G、31B外，还包括屏蔽层312。屏蔽层312设置于萤光体像素之间31R、31G、31B，且可包含黑色或白色的绝缘材料，以增加对比度或反射率。Referring to FIG. 3H, a phosphor matrix 31 (which may be a fluorescent patch) may be disposed on the upper surface 32A of the LED matrix 32. The phosphor matrix 31 includes a shield layer 312 in addition to the phosphor pixels 31R, 31G, and 31B of different colors. The shielding layer 312 is disposed between the phosphor pixels 31R, 31G, 31B, and may include a black or white insulating material to increase contrast or reflectance.
于其他实施方式中(图未示)，发光二极管像素可为覆晶式发光二极管，而该非导电载体基板可为薄膜晶体管(Thin Film Transistor，TFT)的电路基板，TFT的电路基板包含多条扫描线(导体线路)与多条数据线(金属导通层)，每条扫描线(导体线路)与每一列发光二极管像素电性连接，每条数据线(金属导通层)与每一行发光二极管像素电性连接，每一发光二极管像素还包括一薄膜晶体管(Thin Film Transistor,TFT)，用以控制每一发光二极管像素发光与否。In other embodiments (not shown), the LED pixel can be a flip-chip light-emitting diode, and the non-conductive carrier substrate can be a circuit substrate of a Thin Film Transistor (TFT). The circuit substrate of the TFT includes multiple a scan line (conductor line) and a plurality of data lines (metal conduction layers), each scan line (conductor line) is electrically connected to each column of LED pixels, and each of the data lines (metal conduction layer) and each row emits light The diode pixels are electrically connected, and each of the LED pixels further includes a Thin Film Transistor (TFT) for controlling whether each LED pixel emits light or not.
在此实施方式中，发光二极管像素还包括一P极电极及一N极电极，以分别与对应的 导体线路及金属导通层电性连接，P极电极及N极电极分别设置于第一极性(P极)半导体及第二极性(N极)半导体上。In this embodiment, the LED pixel further includes a P pole electrode and an N pole electrode to respectively correspond to The conductor line and the metal conduction layer are electrically connected, and the P pole electrode and the N pole electrode are respectively disposed on the first polarity (P pole) semiconductor and the second polarity (N pole) semiconductor.
综上，为了实现小间距(高分辨率)的显示装置，将LED显示屏的矩阵应用电路与LED的磊晶晶圆的线路设计统合，实现单一晶圆片即为发光二极管矩阵。其中LED所发出光源以UV光及短波蓝光为较佳。利用列扫描的方式控制发光二极管像素，使各独立发光二极管像素具有各自的驱动电流及发光时间，以调整发光强度。在发光二极管矩阵上贴附含有红绿蓝(R、G、B)萤光粉的萤光体(贴片)矩阵，使发光二极管像素用于激发对应的萤光贴片像素的萤光粉，形成全彩显示装置。In summary, in order to realize a small-pitch (high-resolution) display device, the matrix application circuit of the LED display screen and the circuit design of the epitaxial wafer of the LED are integrated to realize a single wafer, that is, an LED matrix. Among them, the light source emitted by the LED is preferably UV light and short-wave blue light. The LED pixels are controlled by means of column scanning, so that the individual LED pixels have respective driving currents and lighting times to adjust the luminous intensity. A matrix of phosphors (patch) containing red, green and blue (R, G, B) phosphors is attached to the matrix of the light-emitting diodes, so that the LED pixels are used to excite the phosphors of the corresponding fluorescent patch pixels. Form a full color display device.
请参阅图4A所示，其显示了依据本发明的第二较佳实施例的显示装置2010的结构示意图。显示装置2010可作为一微型矩阵式显示装置，其可包括一发光二极管矩阵2012及一萤光体矩阵2011，其中发光二极管矩阵2012可为上述实施例的发光二极管矩阵12或32，亦可为其他构成方式的发光二极管矩阵。萤光体矩阵2011设置于发光二极管矩阵2012上，且包含多个萤光体像素，例如第一萤光体20111R。萤光体矩阵2011可直接设置或形成于发光二极管矩阵2012上。Please refer to FIG. 4A, which shows a schematic structural view of a display device 2010 according to a second preferred embodiment of the present invention. The display device 2010 can be a micro-matrix display device, which can include an LED matrix 2012 and a phosphor matrix 2011. The LED matrix 2012 can be the LED matrix 12 or 32 of the above embodiment, or other A matrix of light-emitting diodes that are constructed in a manner. The phosphor matrix 2011 is disposed on the LED matrix 2012 and includes a plurality of phosphor pixels, such as the first phosphor 20111R. The phosphor matrix 2011 can be directly disposed or formed on the light emitting diode matrix 2012.
具体而言，第一萤光体20111R为非萤光粉部，其内不包含萤光粉，而是包含颜料(pigment)或染料(dye)；该颜色或染料可为红色，且可为有机或无机；此外，非萤光粉部更可包含一光致抗蚀剂，红色的颜料或染料与该光致抗蚀剂相混合。如此，非萤光粉部可通过黄光微影制程来形成于发光二极管矩阵2012上。Specifically, the first phosphor 20111R is a non-fluorescent powder portion, which does not contain a phosphor powder, but contains a pigment or a dye; the color or dye may be red and may be organic Or inorganic; in addition, the non-fluorescent powder portion may further comprise a photoresist, and a red pigment or dye is mixed with the photoresist. Thus, the non-fluorescent powder portion can be formed on the light emitting diode matrix 2012 by a yellow light lithography process.
请参阅图4B所示，发光二极管矩阵2012可包含第二萤光体20112G，第二萤光体20112G为非萤光粉部，包含颜料或染料；该颜色或染料可为绿色，且为有机或无机；此外，非萤光粉部更可包含一光致抗蚀剂，绿色的颜料或染料与该光致抗蚀剂相混合。请参阅图4C所示，发光二极管矩阵2012可同时包括第一萤光体20111R及第二萤光体20112G，彼此交错排列。Referring to FIG. 4B, the LED matrix 2012 may include a second phosphor 20112G, which is a non-fluorescent powder portion, containing a pigment or a dye; the color or dye may be green and organic or Inorganic; in addition, the non-fluorescent powder portion may further comprise a photoresist, and a green pigment or dye is mixed with the photoresist. Referring to FIG. 4C, the LED matrix 2012 can include both the first phosphor 20111R and the second phosphor 20112G, which are staggered with each other.
请参阅图4D及图7B所示，发光二极管矩阵2012更可包含第三萤光体20113Y，与第一萤光体20111R及第二萤光体20112G交错排列。第三萤光体20113Y为非萤光粉部，包含绿色的颜料或染料(有机或无机者)。第三萤光体20113Y亦可为萤光粉部，其包含黄色萤光粉。在一实施方式中，黄色萤光粉包括Garent、Silicate、Nitride、KSF、Silicon萤光粉，或可包括YAG:Ce、LuAG:Ce、TbAG:Ce、(Y，Lu)AG:Ce、(Y，Tb)AG:Ce等萤光粉。Referring to FIG. 4D and FIG. 7B , the LED matrix 2012 further includes a third phosphor 20113Y, which is staggered with the first phosphor 20111R and the second phosphor 20112G. The third phosphor 20113Y is a non-fluorescent powder portion and contains a green pigment or dye (organic or inorganic). The third phosphor 20113Y may also be a phosphor powder portion containing yellow phosphor powder. In one embodiment, the yellow phosphor powder comprises Garent, Silicate, Nitride, KSF, Silicon Fluorescent Powder, or may include YAG:Ce, LuAG:Ce, TbAG:Ce, (Y,Lu)AG:Ce, (Y , Tb) AG: Ce and other fluorescent powder.
请参阅图4E及图7A所示，发光二极管矩阵2012更可包含第三萤光体20113B，其为非萤光粉部，包含蓝色的颜料或染料(有机或无机者)。请参阅图4F及图7C所示，发光二极管矩阵2012更可包含透光部20114，与第一萤光体20111R及第二萤光体20112G交错排列。透光部20114不包含任何材料的中空结构，亦可仅包含不改变光线波长的硅胶材料等。 Referring to FIG. 4E and FIG. 7A , the LED matrix 2012 may further include a third phosphor 20113B, which is a non-fluorescent powder portion, and contains a blue pigment or dye (organic or inorganic). Referring to FIG. 4F and FIG. 7C , the LED matrix 2012 further includes a light transmissive portion 20114 and is alternately arranged with the first phosphor 20111R and the second phosphor 20112G. The light transmitting portion 20114 does not include a hollow structure of any material, and may include only a silica gel material or the like that does not change the wavelength of light.
请参阅图4G(或图8A至图8C)所示，萤光体矩阵2011可间接地设置或形成于发光二极管矩阵2012上，也就是，显示装置2010还包含一透光基板20400，而萤光体矩阵2011形成于透光基板20400上，然后透光基板20400再直接设置于发光二极管矩阵2012上。Referring to FIG. 4G (or FIG. 8A to FIG. 8C ), the phosphor matrix 2011 may be indirectly disposed or formed on the LED matrix 2012 , that is, the display device 2010 further includes a transparent substrate 20400, and the fluorescent device The body matrix 2011 is formed on the light-transmitting substrate 20400, and then the light-transmitting substrate 20400 is directly disposed on the light-emitting diode matrix 2012.
在一实施方式中，非萤光粉部的染料可选自于巴斯夫(BASF)的商标
Figure PCTCN2017096604-appb-000001
或
Figure PCTCN2017096604-appb-000002
产品，举例而言，黄色萤光染料可以是
Figure PCTCN2017096604-appb-000003
F Yellow 083、或
Figure PCTCN2017096604-appb-000004
FYellow 170；红色萤光染料可以是
Figure PCTCN2017096604-appb-000005
F Red 305、或
Figure PCTCN2017096604-appb-000006
F Pink 285、或
Figure PCTCN2017096604-appb-000007
Red 495；绿色萤光染料可以是
Figure PCTCN2017096604-appb-000008
F Yellow 083、或
Figure PCTCN2017096604-appb-000009
F Yellow 170、或
Figure PCTCN2017096604-appb-000010
F Green 850；蓝色萤光染料可以是
Figure PCTCN2017096604-appb-000011
F Violet 570或
Figure PCTCN2017096604-appb-000012
F Blue 650或
Figure PCTCN2017096604-appb-000013
Blue 762。In one embodiment, the dye of the non-fluorescent powder portion may be selected from the trademark of BASF.
Figure PCTCN2017096604-appb-000001
or
Figure PCTCN2017096604-appb-000002
Products, for example, yellow fluorescent dyes can be
Figure PCTCN2017096604-appb-000003
F Yellow 083, or
Figure PCTCN2017096604-appb-000004
FYellow 170; red fluorescent dye can be
Figure PCTCN2017096604-appb-000005
F Red 305, or
Figure PCTCN2017096604-appb-000006
F Pink 285, or
Figure PCTCN2017096604-appb-000007
Red 495; green fluorescent dye can be
Figure PCTCN2017096604-appb-000008
F Yellow 083, or
Figure PCTCN2017096604-appb-000009
F Yellow 170, or
Figure PCTCN2017096604-appb-000010
F Green 850; blue fluorescent dye can be
Figure PCTCN2017096604-appb-000011
F Violet 570 or
Figure PCTCN2017096604-appb-000012
F Blue 650 or
Figure PCTCN2017096604-appb-000013
Blue 762.
在一实施方式中，染料可选自于巴斯夫的以下商标或型号的产品：
Figure PCTCN2017096604-appb-000014
Yel low D 0960、
Figure PCTCN2017096604-appb-000015
Yellow L 1061HD、
Figure PCTCN2017096604-appb-000016
Magenta P 4535、
Figure PCTCN2017096604-appb-000017
Yel low D 1085、
Figure PCTCN2017096604-appb-000018
Magenta L 4540、
Figure PCTCN2017096604-appb-000019
Yellow D 1155、
Figure PCTCN2017096604-appb-000020
Blue D 7086、
Figure PCTCN2017096604-appb-000021
Yellow D 1819、
Figure PCTCN2017096604-appb-000022
Blue D 7110F、
Figure PCTCN2017096604-appb-000023
Yellow L 2040、
Figure PCTCN2017096604-appb-000024
Orange D 2905、
Figure PCTCN2017096604-appb-000025
Red L 4100HD、
Figure PCTCN2017096604-appb-000026
Orange D 2961、
Figure PCTCN2017096604-appb-000027
Red L 4105HD、
Figure PCTCN2017096604-appb-000028
Red L 3630、
Figure PCTCN2017096604-appb-000029
Pink D 4450、
Figure PCTCN2017096604-appb-000030
Red D 3656HD、
Figure PCTCN2017096604-appb-000031
Magenta D 4500J、
Figure PCTCN2017096604-appb-000032
Violet D 5800、
Figure PCTCN2017096604-appb-000033
Magenta L 4530、
Figure PCTCN2017096604-appb-000034
Yellow 1061KJ、
Figure PCTCN2017096604-appb-000035
Yellow 1550K、
Figure PCTCN2017096604-appb-000036
Yellow 2040KJ、
Figure PCTCN2017096604-appb-000037
Magenta 4330KJ、
Figure PCTCN2017096604-appb-000038
Red 4410K、
Figure PCTCN2017096604-appb-000039
Magenta 4535KJ、
Figure PCTCN2017096604-appb-000040
Blue 7080KJ、
Figure PCTCN2017096604-appb-000041
Black 0066KJ、
Figure PCTCN2017096604-appb-000042
Red 3630KJ、
Figure PCTCN2017096604-appb-000043
Red 3890K、
Figure PCTCN2017096604-appb-000044
Yellow 1061J、
Figure PCTCN2017096604-appb-000045
Violet 5700K、
Figure PCTCN2017096604-appb-000046
Magenta 4500J、
Figure PCTCN2017096604-appb-000047
Green 8750K、
Figure PCTCN2017096604-appb-000048
Blue 7080J、
Figure PCTCN2017096604-appb-000049
Yellow D 1055、
Figure PCTCN2017096604-appb-000050
Yellow D 1245、
Figure PCTCN2017096604-appb-000051
Magenta D 4500J、
Figure PCTCN2017096604-appb-000052
Magenta D 4550J、
Figure PCTCN2017096604-appb-000053
Blue D 7086、
Figure PCTCN2017096604-appb-000054
Blue D 7088、
Figure PCTCN2017096604-appb-000055
Orange D 2961、
Figure PCTCN2017096604-appb-000056
Orange D 2980、
Figure PCTCN2017096604-appb-000057
Red L 3630、
Figure PCTCN2017096604-appb-000058
Red L 4045、
Figure PCTCN2017096604-appb-000059
F Yellow 2200、
Figure PCTCN2017096604-appb-000060
Violet D 5800、
Figure PCTCN2017096604-appb-000061
F Pink 2302、
Figure PCTCN2017096604-appb-000062
Green D 8730、
Figure PCTCN2017096604-appb-000063
F Blue 2502等。In one embodiment, the dye may be selected from the following trademarks or models of BASF:
Figure PCTCN2017096604-appb-000014
Yel low D 0960,
Figure PCTCN2017096604-appb-000015
Yellow L 1061HD,
Figure PCTCN2017096604-appb-000016
Magenta P 4535,
Figure PCTCN2017096604-appb-000017
Yel low D 1085,
Figure PCTCN2017096604-appb-000018
Magenta L 4540,
Figure PCTCN2017096604-appb-000019
Yellow D 1155,
Figure PCTCN2017096604-appb-000020
Blue D 7086,
Figure PCTCN2017096604-appb-000021
Yellow D 1819,
Figure PCTCN2017096604-appb-000022
Blue D 7110F,
Figure PCTCN2017096604-appb-000023
Yellow L 2040,
Figure PCTCN2017096604-appb-000024
Orange D 2905,
Figure PCTCN2017096604-appb-000025
Red L 4100HD,
Figure PCTCN2017096604-appb-000026
Orange D 2961,
Figure PCTCN2017096604-appb-000027
Red L 4105HD,
Figure PCTCN2017096604-appb-000028
Red L 3630,
Figure PCTCN2017096604-appb-000029
Pink D 4450,
Figure PCTCN2017096604-appb-000030
Red D 3656HD,
Figure PCTCN2017096604-appb-000031
Magenta D 4500J,
Figure PCTCN2017096604-appb-000032
Violet D 5800,
Figure PCTCN2017096604-appb-000033
Magenta L 4530,
Figure PCTCN2017096604-appb-000034
Yellow 1061KJ,
Figure PCTCN2017096604-appb-000035
Yellow 1550K,
Figure PCTCN2017096604-appb-000036
Yellow 2040KJ,
Figure PCTCN2017096604-appb-000037
Magenta 4330KJ,
Figure PCTCN2017096604-appb-000038
Red 4410K,
Figure PCTCN2017096604-appb-000039
Magenta 4535KJ,
Figure PCTCN2017096604-appb-000040
Blue 7080KJ,
Figure PCTCN2017096604-appb-000041
Black 0066KJ,
Figure PCTCN2017096604-appb-000042
Red 3630KJ,
Figure PCTCN2017096604-appb-000043
Red 3890K,
Figure PCTCN2017096604-appb-000044
Yellow 1061J,
Figure PCTCN2017096604-appb-000045
Violet 5700K,
Figure PCTCN2017096604-appb-000046
Magenta 4500J,
Figure PCTCN2017096604-appb-000047
Green 8750K,
Figure PCTCN2017096604-appb-000048
Blue 7080J,
Figure PCTCN2017096604-appb-000049
Yellow D 1055,
Figure PCTCN2017096604-appb-000050
Yellow D 1245,
Figure PCTCN2017096604-appb-000051
Magenta D 4500J,
Figure PCTCN2017096604-appb-000052
Magenta D 4550J,
Figure PCTCN2017096604-appb-000053
Blue D 7086,
Figure PCTCN2017096604-appb-000054
Blue D 7088,
Figure PCTCN2017096604-appb-000055
Orange D 2961,
Figure PCTCN2017096604-appb-000056
Orange D 2980,
Figure PCTCN2017096604-appb-000057
Red L 3630,
Figure PCTCN2017096604-appb-000058
Red L 4045,
Figure PCTCN2017096604-appb-000059
F Yellow 2200,
Figure PCTCN2017096604-appb-000060
Violet D 5800,
Figure PCTCN2017096604-appb-000061
F Pink 2302
Figure PCTCN2017096604-appb-000062
Green D 8730,
Figure PCTCN2017096604-appb-000063
F Blue 2502 and so on.
请参阅图5A至图5D所示，以下将说明通过黄光微影制程来形成如图4E所式的萤光体阵列2011的一例式方法。如图5A所示，首先将混合光致抗蚀剂及染料(或颜料)的第一萤光体20111R的原料直接涂布于发光二极管矩阵2012上。如图5B所示，对第一萤光体20111R的原料进行曝光、烘烤及显影，以移除部分的原料，形成多个第一萤光体20111R。如图5C所示，将第二萤光体20112G的原料涂布于发光二极管矩阵2012及第一萤光体20111R上，进行曝光、烘烤及显影后，移除部分的原料，形成多个第二萤光体20112G。如图5D所示，将第三萤光体20113B的原料涂布于发光二极管矩阵2012、第一萤光体20111R及第二萤光体20112G上，进行曝光、烘烤及显影后，移除部分的原料，形成多个 第三萤光体20113B。Referring to FIGS. 5A to 5D, an exemplary method of forming the phosphor array 2011 of the type shown in FIG. 4E by a yellow light lithography process will be described below. As shown in FIG. 5A, the raw material of the first phosphor 20111R of the mixed photoresist and the dye (or pigment) is first directly applied onto the light emitting diode matrix 2012. As shown in FIG. 5B, the raw material of the first phosphor 20111R is exposed, baked, and developed to remove a portion of the raw material to form a plurality of first phosphors 20111R. As shown in FIG. 5C, the raw material of the second phosphor 20112G is applied onto the LED matrix 2012 and the first phosphor 20111R, and after exposure, baking, and development, part of the raw materials are removed to form a plurality of Two phosphors 20112G. As shown in FIG. 5D, the raw material of the third phosphor 20113B is applied to the LED matrix 2012, the first phosphor 20111R, and the second phosphor 20112G, and after exposure, baking, and development, the removed portion is removed. Raw materials, forming multiple Third phosphor 20113B.
请参阅图6A至图6E所示，以下说明通过黄光微影制程来形成如图4G所式的萤光体阵列2011的一例式方法。如图6A所示，将第一萤光体20111R的原料直接涂布于透光基板20400上；如图6B所示，对第一萤光体20111R的原料进行曝光、烘烤及显影，形成多个第一萤光体20111R。如图6C所示，将第二萤光体20112G的原料涂布于透光基板20400及第一萤光体20111R上，进行曝光、烘烤及显影后，形成多个第二萤光体20112G。如图6D所示，将第三萤光体20113B的原料涂布于透光基板20400、第一萤光体20111R及第二萤光体20112G上，进行曝光、烘烤及显影后，形成多个第三萤光体20113B。如图6E所示，最后将透光基板20400设置于发光二极管矩阵2012上。Referring to FIGS. 6A to 6E, an exemplary method of forming the phosphor array 2011 of the formula of FIG. 4G by a yellow light lithography process will be described below. As shown in FIG. 6A, the raw material of the first phosphor 20111R is directly coated on the transparent substrate 20400; as shown in FIG. 6B, the raw material of the first phosphor 20111R is exposed, baked, and developed to form a plurality of materials. First phosphors 20111R. As shown in FIG. 6C, the raw material of the second phosphor 20112G is applied onto the transparent substrate 20400 and the first phosphor 20111R, and after exposure, baking, and development, a plurality of second phosphors 20112G are formed. As shown in FIG. 6D, the raw material of the third phosphor 20113B is applied onto the transparent substrate 20400, the first phosphor 20111R, and the second phosphor 20112G, and exposed, baked, and developed to form a plurality of materials. Third phosphor 20113B. As shown in FIG. 6E, the transparent substrate 20400 is finally disposed on the LED matrix 2012.
请参阅图9A至图9C所示，可采分配(dispense)方式将第一萤光体20111R、第二萤光体20112G、及/或第三萤光体20113B的原料形成于发光二极管矩阵2012的特定位址处的发光二极管LED上。另一方面，第一萤光体20111R、第二萤光体20112G及第三萤光体20113B的每一个也能实施为萤光贴片，经裁切后，再贴合至发光二极管矩阵2012上。Referring to FIG. 9A to FIG. 9C , the materials of the first phosphor 20111R, the second phosphor 20112G, and/or the third phosphor 20113B are formed in the light emitting diode matrix 2012 by a dispensing method. On the LED of the LED at a specific address. On the other hand, each of the first phosphor 20111R, the second phosphor 20112G, and the third phosphor 20113B can also be implemented as a fluorescent patch, and after being cut, attached to the LED matrix 2012. .
综上，萤光体矩阵可通过黄光微影制程来制作，使得萤光体像素的尺寸可达到微小(micro)等级，因此可配合尺寸微小(如边长小于<100μm)的发光二极管像素(或发光二极管芯片)，以提供矩阵式彩色显示模式。In summary, the phosphor matrix can be fabricated by a yellow lithography process, so that the size of the phosphor pixels can reach a micro level, so that it can be matched with small-sized (such as side length less than <100 μm) LED pixels (or luminescence). Diode chip) to provide a matrix color display mode.
请参阅图10所示，其显示了依据本发明的第三较佳实施例的显示装置的一实施方式的结构示意图。该显示装置可作为微型发光装置或矩阵式显示装置，其包括一基座2000、多个发光二极管条2007～2009、多个第一走线2004～2006及多个第二走线2001～2003。Referring to FIG. 10, there is shown a schematic structural view of an embodiment of a display device in accordance with a third preferred embodiment of the present invention. The display device can be used as a micro-light-emitting device or a matrix display device, and includes a pedestal 2000, a plurality of LED strips 2007-2009, a plurality of first traces 2004-2006, and a plurality of second traces 2001-2003.
基座2000可为印刷电路板、陶瓷基板、金属基板、硅基板、铜基板、半导体基板、玻璃基板、线路基板，沿着其边长定义有相垂直交错的一第一方向2100及一第二方向2200；第一方向2100可作为垂直方向，而水平方向2200可作为水平方向。The susceptor 2000 can be a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, a glass substrate, and a circuit substrate, and a first direction 2100 and a second are vertically defined along the side length thereof. Direction 2200; the first direction 2100 can be used as the vertical direction, and the horizontal direction 2200 can be used as the horizontal direction.
该等发光二极管条2007～2009设置于基座2000上，被基座2000承载。发光二极管条2007～2009沿着第二方向2200平行排列于基座2000上，且每一个包含多个发光二极管，该等发光二极管沿着第一方向2100排列。因此，该等发光二极管条2007～2009所包含的发光二极管整体上排列成一矩阵。本实施方式中，该等发光二极管条2007～2009各包含三个发光二极管，整体上包含九个发光二极管，可定义出三个像素2024～2026。The LED strips 2007-2009 are disposed on the pedestal 2000 and carried by the susceptor 2000. The LED strips 2007-2009 are arranged in parallel along the second direction 2200 on the susceptor 2000, and each of them includes a plurality of light emitting diodes arranged along the first direction 2100. Therefore, the light-emitting diodes included in the light-emitting diode strips 2007-2009 are arranged in a matrix as a whole. In this embodiment, the LED strips 2007-2009 each include three LEDs, and the whole includes nine LEDs, and three pixels 2024-2026 can be defined.
发光二极管条2007～2009的可发出不同颜色的光线，例如第一发光二极管条2007的发光二极管可发出红光，第二发光二极管条2008的发光二极管可发出绿光，第三发光二极管条2009的发光二极管可发出蓝光。另外，该等发光二极管条2007～2009发光二极管亦可皆发出蓝光，但于第一及第二发光二极管条2007及2008上覆盖不同的萤光结构(图未示)，俾以第一及第二发光二极管条2007及2008发出的蓝光转换为红光及绿光。Light-emitting diode strips 2007-2009 can emit different colors of light, for example, the light-emitting diodes of the first light-emitting diode strips 2007 can emit red light, and the light-emitting diodes of the second light-emitting diode strips 2008 can emit green light, and the third light-emitting diode strips 2009 Light-emitting diodes emit blue light. In addition, the light-emitting diode strips 2007-2009 may also emit blue light, but the first and second light-emitting diode strips 2007 and 2008 cover different fluorescent structures (not shown), first and second. The blue light emitted by the two LED strips 2007 and 2008 is converted into red light and green light.
每一个发光二极管都为垂直电流导通的结构，且包含一磊晶基板2301～2303及一半导体磊晶层2401～2403、一第一金属电极2007A1～2009A3及一第二金属电极2007B～ 2009B。磊晶基板2301～2303可包括蓝宝石基板、氮化镓基板、氮化铝基板、砷化镓基板、磷化镓基板、磷化铟基板、氧化锌基板、硅基板、碳化硅基板；半导体磊晶层2401～2403例如可为P极半导体层、发光层及N极半导体层的堆迭结构，且形成、设置于磊晶基板2301～2303上。第一金属电极2007A1～2009A3设置于磊晶基板2301～2303的一侧，而第二金属电极2007B～2009B设置于磊晶基板2301～2303的另一侧、且朝向基座2000，两者皆电性连接至该半导体磊晶层2401～2403，电流可从第一金属电极2007A1～2009A3垂直流向第二金属电极2007B～2009B。Each of the light emitting diodes has a vertical current conducting structure, and includes an epitaxial substrate 2301 to 2303 and a semiconductor epitaxial layer 2401 to 2403, a first metal electrode 2007A1 to 2009A3, and a second metal electrode 2007B. 2009B. The epitaxial substrates 2301 to 2303 may include a sapphire substrate, a gallium nitride substrate, an aluminum nitride substrate, a gallium arsenide substrate, a gallium phosphide substrate, an indium phosphide substrate, a zinc oxide substrate, a silicon substrate, a silicon carbide substrate, and a semiconductor epitaxial layer. The layers 2401 to 2403 may be, for example, a stacked structure of a P-pole semiconductor layer, a light-emitting layer, and an N-polar semiconductor layer, and are formed on the epitaxial substrates 2301 to 2303. The first metal electrodes 2007A1 to 2009A3 are disposed on one side of the epitaxial substrates 2301 to 2303, and the second metal electrodes 2007B to 2009B are disposed on the other side of the epitaxial substrates 2301 to 2303 and facing the susceptor 2000, both of which are electrically Connected to the semiconductor epitaxial layers 2401 to 2403, current can flow perpendicularly from the first metal electrodes 2007A1 to 2009A3 to the second metal electrodes 2007B to 2009B.
同一条的发光二极管条2007～2009之中(以第一发光二极管条2007为例)，其发光二极管的第一金属电极2007A1～2007A3可为独立者，而第二金属电极2007B可为同用者。Among the same LED strips 2007-2009 (taking the first LED strip 2007 as an example), the first metal electrodes 2007A1 to 2007A3 of the light emitting diodes may be independent, and the second metal electrodes 2007B may be the same user. .
该等第一走线2004～2006设置于基座2000上，沿着第一方向2100相平行排列，且分别电性连接该等第一金属电极2007A1～2009A3。具体而言，第一走线2004通过多条打线2011电性连接同一像素2024中的第一金属电极2007A1、2008A1及2009A1；第一走线2005通过多条打线2012电性连接同一像素2025中的第一金属电极2007A2、2008A2及2009A2；第一走线2006通过多条打线2013电性连接同一像素2026中的第一金属电极2007A3、2008A3及2009A3。The first traces 2004 to 2006 are disposed on the susceptor 2000, are arranged in parallel along the first direction 2100, and are electrically connected to the first metal electrodes 2007A1 to 2009A3, respectively. Specifically, the first traces 2004 are electrically connected to the first metal electrodes 2007A1, 2008A1, and 2009A1 in the same pixel 2024 through the plurality of wires 2011. The first traces 2005 are electrically connected to the same pixel 2025 through the plurality of wires 2012. The first metal electrodes 2007A2, 2008A2, and 2009A2 are electrically connected to the first metal electrodes 2007A3, 2008A3, and 2009A3 of the same pixel 2026 through a plurality of wires 2013.
该等第二走线2001～2003设置于基座2000上，沿着第二方向2200相平行排列，且分别电性连接该等第二金属电极2007B～2009B。第二走线2001～2003于第一方向2100上可长于发光二极管条2007～2009，且可通过金球连接、金属链结、异方性导电胶连接或后述实施例的激光界面层等方式与第二金属电极2007B～2009B电性连接。The second traces 2001-2003 are disposed on the pedestal 2000, are arranged in parallel along the second direction 2200, and are electrically connected to the second metal electrodes 2007B-2009B, respectively. The second traces 2001-2003 may be longer than the LED strips 2007-2009 in the first direction 2100, and may be connected by a gold ball connection, a metal link, an anisotropic conductive adhesive or a laser interface layer of an embodiment to be described later. It is electrically connected to the second metal electrodes 2007B to 2009B.
请参阅图11A及图11B，于另一实施方式中，发光二极管条2007～2009可为覆晶结构者，也就是第一金属电极2007A～2007A及第二金属电极2007B～2009B位于磊晶基板2301～2303的同一侧，皆朝向基座2000。因此，第一走线2004～2006可通过金球连接、金属链结、异方性导电胶连接或激光界面层等方式与第一金属电极2007A～2009A电性连接。Referring to FIG. 11A and FIG. 11B , in another embodiment, the LED strips 2007-2009 may be a flip chip structure, that is, the first metal electrodes 2007A-2007A and the second metal electrodes 2007B-2009B are located on the epitaxial substrate 2301. The same side of ~2303 faces the base 2000. Therefore, the first traces 2004 to 2006 can be electrically connected to the first metal electrodes 2007A to 2009A by means of a gold ball connection, a metal link, an anisotropic conductive adhesive connection, or a laser interface layer.
请参阅图11C及图11D所示，发光二极管条2007～2009的至少一者(以发光二极管条2007为例)，其第一金属电极2007A1～2007A3为独立者，而第二金属电极2007B可为共用者(如11D图)、或为独立的第二金属电极2007B1～2007B3(如图11C)。另请参阅图11E及图11F所示，发光二极管条2007～2009的至少一者(以发光二极管条2007为例)，可包含一切割区2500，该切割区2500为一沟槽(通过蚀刻制程或激光切割等方式形成)，可将各发光二极管的磊晶基板2301分离、更可进一步将半导体磊晶层2401分离。切割区2500之中可形成、覆盖一屏蔽层。Referring to FIG. 11C and FIG. 11D , at least one of the LED strips 2007-2009 (taking the LED strip 2007 as an example), the first metal electrodes 2007A1 - 2007A3 are independent, and the second metal electrode 2007B can be The sharer (such as the 11D map) or the independent second metal electrodes 2007B1 to 2007B3 (Fig. 11C). Referring to FIG. 11E and FIG. 11F, at least one of the LED strips 2007-2009 (taking the LED strip 2007 as an example) may include a dicing region 2500, which is a trench (through an etching process). Or formed by laser cutting or the like, the epitaxial substrate 2301 of each light emitting diode can be separated, and the semiconductor epitaxial layer 2401 can be further separated. A shielding layer may be formed and covered in the cutting zone 2500.
请参阅图12A所示，于另一实施方式中，发光二极管条2007～2009可为水平结构，也就是第一金属电极2007A1～2007A3及第二金属电极2007B～2009B位于磊晶基板2301～2303的同一侧，但背向基座2000。第二走线2001～2003可通过打线2017～2019来电性 连接第二金属电极2007B～2009B，而第一走线2004～2006可通过打线20011～2013搭配导电金属条2014～2017来电性连接第一金属电极2007A1～2007A3。具体而言，该等导电金属条2014沿着第一方向2100平行排列，且沿着第二方向2200延伸形成，接触第一金属电极2007A1～2007A3，而打线2011～2013连接至导电金属条2014的一侧。请参阅图12B所示，打线2011～2013亦可直接连接至第一金属电极2007A1～2007A3。Referring to FIG. 12A , in another embodiment, the LED strips 2007-2009 can be horizontal, that is, the first metal electrodes 2007A1 - 2007A3 and the second metal electrodes 2007B - 2009B are located on the epitaxial substrates 2301 - 2303. On the same side, but facing away from the base 2000. The second line 2001-2003 can be used to call the line from 2017 to 2019. The second metal electrodes 2007B to 2009B are connected, and the first wirings 2004 to 2006 can electrically connect the first metal electrodes 2007A1 to 2007A3 by bonding the wires 20011 to 2013 with the conductive metal strips 2014 to 2017. Specifically, the conductive metal strips 2014 are arranged in parallel along the first direction 2100, and are formed to extend along the second direction 2200 to contact the first metal electrodes 2007A1 to 2007A3, and the wires 2011 to 2013 are connected to the conductive metal strips 2014. One side. Referring to FIG. 12B, the wires 2011 to 2013 may be directly connected to the first metal electrodes 2007A1 to 2007A3.
请参阅图13所示，于另一实施方式中，基座2000可包含一第一基座2020及一第二基座2000，两者相平行设置，且发光二极管条2007～2009设置于两者之间。第一基座2020可为一玻璃基板等可透光的基板，故不会遮蔽光线。第一走线2021～2023设置于第一基座2020上，且是以透光导电材料制成，故不会遮蔽光线。该透光且导电的材料可包括铟锡氧化物(Indium Tin Oxide；ITO)、铟锌氧化物(indium zinc oxide，IZO)、氧化锌(Zinc Oxide，ZnO)或氧化锌铝(Aluminum Zinc Oxide，AZO)等。Referring to FIG. 13 , in another embodiment, the susceptor 2000 can include a first pedestal 2020 and a second pedestal 2000 , which are disposed in parallel, and the LED strips 2007-2009 are disposed in the two. between. The first pedestal 2020 can be a light-transmissive substrate such as a glass substrate, so that light is not blocked. The first traces 2021-2023 are disposed on the first pedestal 2020 and are made of a light-transmissive conductive material so as not to block light. The light transmissive and electrically conductive material may include Indium Tin Oxide (ITO), indium zinc oxide (IZO), zinc oxide (Zinc Oxide, ZnO) or aluminum zinc oxide (Aluminum Zinc Oxide, AZO) and so on.
请参阅图14所示，发光二极管条2007～2009可通过一扫描电路2601及一数据电路2602来控制，扫描电路2601与发光二极管条2007～2009通过扫描走线(即第一走线)2601-1～2601-3来电性连接，而数据电路2602与发光二极管条2007～2009通过数据走线(即第二走线)2602-1～2602-3来电性连接。因此，可控制特定位址上的发光二极管产生光线。Referring to FIG. 14 , the LED strips 2007-2009 can be controlled by a scanning circuit 2601 and a data circuit 2602. The scanning circuit 2601 and the LED strips 2007-2009 pass through a scanning trace (ie, a first trace) 2601- 1 to 2601-3 are electrically connected, and the data circuit 2602 and the LED strips 2007 to 2009 are electrically connected by a data trace (ie, a second trace) 2602-1 to 2602-3. Therefore, it is possible to control the light-emitting diodes on a specific address to generate light.
综上，通过多个发光二极管条相平行排列，可构成一矩阵式显示装置或发光装置，而每一个发光二极管条的长度较大(宽度仍为微小等级)，故发光二极管条易于移转及排列于基座上。In summary, a plurality of LED strips are arranged in parallel to form a matrix display device or a light-emitting device, and each of the LED strips has a large length (the width is still a small level), so that the LED strips are easily transferred and Arranged on the base.
请参阅图15A及图15B所示，其显示了依据本发明的第四较佳实施例的发光装置的第一态样的结构示意图。于第一态样中，发光装置100包含一基板110及一发光芯片120，基板110的材料可包括硅基板、印刷电路板、陶瓷基板、金属基板、硅基板、铜基板、半导体基板、玻璃基板、线路基板或柔性印刷电路板；发光芯片120可为一发光二极管芯片或一激光二极管芯片。发光芯片120包含至少一电极121，而基板110包含一接垫111，两者相面对及对齐。在另一实施方式中，基板110可对应上述第三较佳实施例的显示装置的基座，而接垫111可对应第一走线或第二走线；发光芯片120可对应上述显示装置的发光二极管条，而电极121可对应金属电极。Referring to FIG. 15A and FIG. 15B, there is shown a schematic structural view of a first aspect of a light emitting device according to a fourth preferred embodiment of the present invention. In the first aspect, the light emitting device 100 includes a substrate 110 and a light emitting chip 120. The material of the substrate 110 may include a silicon substrate, a printed circuit board, a ceramic substrate, a metal substrate, a silicon substrate, a copper substrate, a semiconductor substrate, and a glass substrate. The circuit board or the flexible printed circuit board; the light emitting chip 120 can be an LED chip or a laser diode chip. The light emitting chip 120 includes at least one electrode 121, and the substrate 110 includes a pad 111 facing and aligned. In another embodiment, the substrate 110 can correspond to the pedestal of the display device of the third preferred embodiment, and the pad 111 can correspond to the first trace or the second trace; the light-emitting chip 120 can correspond to the display device. The light emitting diode strips, and the electrodes 121 can correspond to the metal electrodes.
发光芯片120可为微小(micro)尺寸者，故其电极121及对应的基板110的接垫111具有更小的尺寸。因此，若采用锡膏或助焊剂(Flux)来电性连接电极121与接垫111时，可能会遇到锡膏或助焊剂的粒径过大、锡膏或助焊剂的胶量控制不易等问题，此外，助焊剂过回流炉(Reflow)时，可能会膨胀而造成发光芯片120从基板110上翘起。The light-emitting chip 120 can be of a micro size, so that the electrode 121 and the pad 111 of the corresponding substrate 110 have a smaller size. Therefore, if the solder paste or the flux (Flux) is used to electrically connect the electrode 121 and the pad 111, the size of the solder paste or the flux may be too large, and the solder paste or the flux may not be easily controlled. In addition, when the flux passes through the reflow furnace (Reflow), it may swell to cause the light-emitting chip 120 to be lifted from the substrate 110.
为避免此等问题，电极121与接垫111通过一(第一)界面层130来形成电性连接。界面层130形成于电极121与接垫111之间，且是通过一激光脉冲151、152所致。激光脉冲151、152可从发光芯片120上方射入至发光芯片120，然后聚焦至电极121(如图 15A)或接垫111(如图15B)，致使能量传递至电极121与接垫111。电极121与接垫111将被加热，使得两者的接面处高温共融，进而形成一共晶层、一改质层或一焊接层，从而电性连接；于高温共融处，电极121与接垫111的表面呈非光滑的凹凸面。较佳地，激光脉冲151的波长范围为800nm～1100nm，或808nm～1064nm，故激光脉冲151的能量较不会被发光芯片120的磊晶基板或磊晶层吸收。此外，激光脉冲151的光点直径可为10um～150um，不大于电极121与接垫111的尺寸。在一实施例中，激光脉冲可从基板110下方射入至基板110，然后聚焦至电极121(如图15A)或接垫111(如图15B)，致使能量传递至电极121与接垫111，以达到激光焊接效果。In order to avoid such problems, the electrode 121 and the pad 111 are electrically connected through a (first) interface layer 130. The interface layer 130 is formed between the electrode 121 and the pad 111 and is caused by a laser pulse 151, 152. The laser pulses 151, 152 can be incident from the top of the light emitting chip 120 to the light emitting chip 120, and then focused to the electrode 121 (as shown in the figure) 15A) or pad 111 (Fig. 15B) causes energy to be transferred to electrode 121 and pad 111. The electrode 121 and the pad 111 will be heated so that the junctions of the two are co-melted at a high temperature, thereby forming a eutectic layer, a modified layer or a solder layer to be electrically connected; at the high temperature co-fusion, the electrode 121 and The surface of the pad 111 has a non-smooth surface. Preferably, the laser pulse 151 has a wavelength ranging from 800 nm to 1100 nm, or 808 nm to 1064 nm, so that the energy of the laser pulse 151 is not absorbed by the epitaxial substrate or the epitaxial layer of the light emitting chip 120. In addition, the laser pulse 151 may have a spot diameter of 10 um to 150 um, which is not larger than the size of the electrode 121 and the pad 111. In one embodiment, a laser pulse can be incident from the underside of the substrate 110 to the substrate 110 and then focused to the electrode 121 (as in FIG. 15A) or the pad 111 (FIG. 15B), causing energy to be transferred to the electrode 121 and the pad 111. To achieve laser welding results.
请参阅图16A至图16C所示，其显示了依据本发明的第四较佳实施例的发光装置的第二态样的结构示意图。于第二态样中，发光装置200亦包含一发光芯片220及一基板210，发光芯片220包含电极221，而基板210包含接垫211。基板210还包含至少一贯孔213及至少一材料214，贯孔213设置于接垫211下方，从基板210的下表面延伸至下表面，而材料214设置于贯孔213中。材料214为导电及导热性良好的材料，且与接垫211接触而形成电性且导热性连接；材料214又可称为金属导通柱。Referring to FIG. 16A to FIG. 16C, there is shown a schematic structural view of a second aspect of a light-emitting device according to a fourth preferred embodiment of the present invention. In the second aspect, the light emitting device 200 also includes a light emitting chip 220 and a substrate 210. The light emitting chip 220 includes an electrode 221, and the substrate 210 includes a pad 211. The substrate 210 further includes at least a uniform hole 213 and at least one material 214. The through hole 213 is disposed under the pad 211, extending from the lower surface of the substrate 210 to the lower surface, and the material 214 is disposed in the through hole 213. The material 214 is a material having good electrical and thermal conductivity, and is in contact with the pad 211 to form an electrical and thermally conductive connection; the material 214 may also be referred to as a metal conductive post.
电极221与接垫211之间设置有一界面层230，其是由激光脉冲153～155所形成。激光脉冲153～155由基板210的下方朝基板210发射，可聚焦于接垫211(如图16A)、材料214之中(如图16B)、或材料214的下表面(如图16C)。激光脉冲153～155的能量传递至电极221与接垫211，以使电极121与接垫111的接面处加热而高温共融，进而形成一共晶层、一改质层或一焊接层，从而电性连接。较佳地，激光脉冲153～155的波长范围为300nm～1200nm，激光脉冲153～155的光点直径可为10um～150um。在一实施例中，激光脉冲可由发光芯片220的上方朝发光芯片220发射，可聚焦于接垫211(如图16A)、材料214之中(如图16B)、或材料214的下表面(如图16C)，致使能量传递至电极221与接垫211，以达到激光焊接效果。An interface layer 230 is formed between the electrode 221 and the pad 211, which is formed by laser pulses 153-155. Laser pulses 153-155 are emitted from below the substrate 210 toward substrate 210 and may be focused on pads 211 (Fig. 16A), material 214 (Fig. 16B), or the lower surface of material 214 (Fig. 16C). The energy of the laser pulses 153-155 is transmitted to the electrode 221 and the pad 211, so that the junction between the electrode 121 and the pad 111 is heated and co-melted at a high temperature to form a eutectic layer, a modified layer or a solder layer. Electrical connection. Preferably, the laser pulses 153 to 155 have a wavelength in the range of 300 nm to 1200 nm, and the laser pulses 153 to 155 have a spot diameter of 10 um to 150 um. In one embodiment, the laser pulses may be emitted from above the light emitting chip 220 toward the light emitting chip 220, and may be focused on pads 211 (eg, FIG. 16A), material 214 (as in FIG. 16B), or the lower surface of material 214 (eg, Fig. 16C) causes energy to be transferred to the electrode 221 and the pad 211 to achieve a laser welding effect.
请参阅图17A及图17B所示，其显示了依据本发明的第四较佳实施例的发光装置的第三态样的结构示意图。于第三态样中，发光装置300亦包含一发光芯片320及一基板310，发光芯片320包含电极321，而基板310包含接垫311。发光装置300还包含至少一胶体331，设置于电极321及接垫311之间，胶体331的材料可包括助焊剂、银、锡或异方性导电膜。激光脉冲351、352可从发光芯片320上方射入至发光芯片320，聚焦于电极321、接垫311或胶体331，致使胶体311、电极321及接垫311之间的接面处高温共融，形成一(第二)界面层330。易言之，电极321及接垫311之间形成有界面层330。在一实施例中，激光脉冲可从基板310下方射入至基板310，聚焦于电极321、接垫311或胶体331，致使能量传递至胶体331，以达到激光焊接效果。Referring to FIG. 17A and FIG. 17B, there is shown a schematic structural view of a third aspect of a light-emitting device according to a fourth preferred embodiment of the present invention. In the third aspect, the illuminating device 300 also includes a light emitting chip 320 and a substrate 310. The light emitting chip 320 includes an electrode 321 and the substrate 310 includes a pad 311. The illuminating device 300 further includes at least one colloid 331 disposed between the electrode 321 and the pad 311. The material of the colloid 331 may include a flux, silver, tin or an anisotropic conductive film. The laser pulses 351 and 352 can be incident on the light-emitting chip 320 from above the light-emitting chip 320, and are focused on the electrode 321, the pad 311 or the colloid 331, so that the junction between the colloid 311, the electrode 321 and the pad 311 is high-temperature communicative. A (second) interface layer 330 is formed. In other words, an interface layer 330 is formed between the electrode 321 and the pad 311. In one embodiment, a laser pulse can be incident from the underside of the substrate 310 to the substrate 310, focusing on the electrode 321, the pad 311, or the colloid 331 to cause energy to be transferred to the colloid 331 to achieve a laser welding effect.
请参阅图18A至图18C所示，其显示了依据本发明的第四较佳实施例的发光装置的第四态样的结构示意图。于第四态样中，发光装置400亦包含一发光芯片420及一基板410， 发光芯片420包含电极421，而基板410包含接垫411、贯孔413及材料414。发光装置400还包含至少一胶体431，设置于电极421及接垫411之间。激光脉冲353、355可从发光芯片420下方朝基板410发射，聚焦于接垫411或材料414，致使胶体431、电极421及接垫411之间的接面处高温共融，形成一界面层430。易言之，电极421及接垫411之间形成有界面层430。激光脉冲353～355由基板410的下方朝基板410发射，可聚焦于接垫411(如图18A)、材料414之中(如图18B)、或材料414的下表面(如图18C)。激光脉冲353～355的能量传递至胶体431，以使电极421与接垫411的接面处胶体431加热而高温共融，进而形成一共晶层、一改质层或一焊接层，从而电性连接。胶体431的材料可包括助焊剂、银、锡或异方性导电膜。在一实施例中，激光脉冲可由发光芯片420的上方朝发光芯片420发射，可聚焦于接垫411(如图18A)、材料414之中(如图18B)、或材料414的下表面(如图18C)，致使能量传递至胶体431，以达到激光焊接效果。Referring to FIG. 18A to FIG. 18C, there is shown a schematic structural view of a fourth aspect of a light-emitting device according to a fourth preferred embodiment of the present invention. In the fourth aspect, the light emitting device 400 also includes a light emitting chip 420 and a substrate 410. The light emitting chip 420 includes an electrode 421, and the substrate 410 includes a pad 411, a through hole 413, and a material 414. The light emitting device 400 further includes at least one colloid 431 disposed between the electrode 421 and the pad 411. The laser pulses 353, 355 can be emitted from the lower surface of the light-emitting chip 420 toward the substrate 410, and focused on the pad 411 or the material 414, so that the junction between the colloid 431, the electrode 421 and the pad 411 is high-temperature communicative, forming an interface layer 430. . In other words, an interface layer 430 is formed between the electrode 421 and the pad 411. Laser pulses 353-355 are emitted from underneath substrate 410 toward substrate 410 and may be focused on pads 411 (Fig. 18A), material 414 (Fig. 18B), or the lower surface of material 414 (Fig. 18C). The energy of the laser pulses 353-355 is transmitted to the colloid 431, so that the colloid 431 at the junction of the electrode 421 and the pad 411 is heated and co-melted at a high temperature, thereby forming a eutectic layer, a modified layer or a solder layer, thereby electrically connection. The material of the colloid 431 may include a flux, silver, tin or an anisotropic conductive film. In one embodiment, the laser pulses may be emitted from above the light emitting chip 420 toward the light emitting chip 420, and may be focused on the pads 411 (as in Figure 18A), in the material 414 (as in Figure 18B), or on the lower surface of the material 414 (e.g. Fig. 18C) causes energy to be transferred to the colloid 431 to achieve a laser welding effect.
综上，通过激光脉冲于发光芯片的电极及基板的接垫之间形成一界面层，可有效地使电极及接垫产生电性连接，尤其是对于微型化的发光芯片而言，更为有益。In summary, an interface layer is formed between the electrode of the light-emitting chip and the pad of the substrate by the laser pulse, which can effectively make the electrode and the pad electrically connected, especially for the miniaturized light-emitting chip. .
在本实施例中，发光二极管所选用的基板可为尖晶石(Spinnel)、碳化硅(SiC)或蓝宝石(Sapphire)材质的基板。基板亦可以是陶瓷基板，具有电性绝缘的特性且由陶瓷材质组成，陶瓷材质如氧化铝、氮化铝、氧化锆以及氟化钙其中之一者。基板也可以包括玻璃或聚酰亚胺(Polyimide)，以实现柔柔性质。然而，还可以使用任何适当的绝缘焊和柔性材料。In this embodiment, the substrate selected for the light emitting diode may be a substrate made of spinel, silicon carbide (SiC) or sapphire. The substrate may also be a ceramic substrate, which has electrical insulating properties and is composed of a ceramic material such as alumina, aluminum nitride, zirconium oxide and calcium fluoride. The substrate may also include glass or polyimide to achieve a flexible material. However, any suitable insulating solder and flexible material can also be used.
由于极好的亮度，尺寸上小的每个发光二极管可以形成单独的像素。每一个发光二极管可以具有矩形或正方形形状，该矩形或正方形形状具有50μm或更小的一条边。例如，使用具有10μm的一条边的正方形发光二极管作为单独的像素的显示装置具有足够的亮度。因此，在具有600μm的一条边和300μm的另一条边的矩阵中，发光二极管之间的距离足以实现柔性显示装置。Due to the excellent brightness, each light-emitting diode of a small size can form a separate pixel. Each of the light emitting diodes may have a rectangular or square shape having one side of 50 μm or less. For example, a display device using a square light emitting diode having one side of 10 μm as a separate pixel has sufficient brightness. Therefore, in a matrix having one side of 600 μm and the other side of 300 μm, the distance between the light emitting diodes is sufficient to realize a flexible display device.
同时，氮化物半导体可以被用作发光二极管。这些氮化物半导体可以包括氮化镓(GaN)(作为主要元素)以及铟(In)和/或铝(Al)，以实现发射包括蓝色光的各种颜色的光的高功率输出发光二极管。其中，导体线路被布置在发光二极管之上并且电连接至发光二极管。或者是，导体线路被布置在发光二极管之间并且电连接至发光二极管。例如，发光二极管以多行被排列，并且导体线路中的每一个可以被布置在发光二极管的这些行之间。构成单独的像素的发光二极管之间的距离足够长，以允许导体线路中的每一个被布置在发光二极管之间。导体线路可以是条状电极。例如，金属导通层和导体线路可以分别被排列为彼此垂直。因此，形成了矩阵结构。Meanwhile, a nitride semiconductor can be used as a light emitting diode. These nitride semiconductors may include gallium nitride (GaN) (as a main element) and indium (In) and/or aluminum (Al) to realize a high power output light emitting diode that emits light of various colors including blue light. Therein, the conductor lines are arranged above the light emitting diodes and electrically connected to the light emitting diodes. Alternatively, the conductor lines are arranged between the light emitting diodes and electrically connected to the light emitting diodes. For example, the light emitting diodes are arranged in multiple rows, and each of the conductor lines can be arranged between the rows of light emitting diodes. The distance between the light emitting diodes constituting the individual pixels is sufficiently long to allow each of the conductor lines to be arranged between the light emitting diodes. The conductor line can be a strip electrode. For example, the metal conduction layer and the conductor lines may be arranged to be perpendicular to each other, respectively. Therefore, a matrix structure is formed.
就这一点而言，屏障壁可以使单独的像素彼此隔离，并且可以使用反射屏障壁作为屏障壁。根据显示装置的功能，屏障壁可以包括黑色绝缘材料或白色绝缘材料。当使用包括白色绝缘材料的屏障壁时，可以提高反射率。当使用包括黑色绝缘材料的屏障壁时，可以 在具有反射率的同时提高对比率。同时，当导体线路被布置在发光二极管之间时，可以在垂直的发光二极管之间和在导体线路之间布置屏障壁。因此，尺寸上小的发光二极管可以构成单独的像素。由于发光二极管之间的距离足够长，从而允许导体线路被布置在发光二极管之间。因此，可以实现柔性显示装置。In this regard, the barrier wall can isolate individual pixels from each other and a reflective barrier wall can be used as the barrier wall. The barrier wall may include a black insulating material or a white insulating material depending on the function of the display device. When a barrier wall comprising a white insulating material is used, the reflectance can be increased. When using a barrier wall that includes black insulation, Increase the contrast ratio while having reflectivity. Meanwhile, when the conductor lines are arranged between the light emitting diodes, the barrier walls may be arranged between the vertical light emitting diodes and between the conductor lines. Therefore, a small-sized light-emitting diode can constitute a single pixel. Since the distance between the light emitting diodes is sufficiently long, the conductor lines are allowed to be arranged between the light emitting diodes. Therefore, a flexible display device can be realized.
例如，发光二极管可以是发射蓝色(B)光的蓝色半导体发光二极管，并且将蓝色(B)转换成像素的颜色的萤光贴片可以被安装在发光二极管上。就这一点而言，萤光贴片可以包括构成单独的像素的红色萤光粉和绿色萤光粉。也就是说，在红色像素处，可以在蓝色半导体发光二极管上形成可以将蓝色(B)光转换成红色(R)光的红色萤光粉。在绿色像素处，可以在蓝色半导体发光二极管上形成可以将蓝色(B)光转换成绿色(G)光的绿色萤光粉。另外，在蓝色像素处，可以单独形成蓝色(B)发光二极管。在这种情况下，红色(R)像素、绿色(G)像素和蓝色(B)像素可以构成一个像素组。同时，如果需要，则发光二极管可以是分别包括黄色萤光粉的白色发光二极管。在这种情况下，可以将红色萤光粉、绿色萤光粉和蓝色萤光粉布置在白色发光二极管上，以形成像素。可以在萤光粉之间布置黑底，以便增加对比率。也就是说，黑底可以提高对比。因此，可以通过将红色萤光粉和绿色萤光粉应用于蓝色半导体发光二极管来设计其中红色(R)像素、绿色(G)像素和蓝色(B)像素构成一个图元的全彩显示装置。For example, the light emitting diode may be a blue semiconductor light emitting diode that emits blue (B) light, and a fluorescent patch that converts blue (B) into a color of a pixel may be mounted on the light emitting diode. In this regard, the fluorescent patch may include red phosphor and green phosphor constituting individual pixels. That is, at the red pixel, a red phosphor which can convert blue (B) light into red (R) light can be formed on the blue semiconductor light emitting diode. At the green pixel, a green phosphor that can convert blue (B) light into green (G) light can be formed on the blue semiconductor light emitting diode. In addition, at the blue pixel, a blue (B) light emitting diode can be formed separately. In this case, red (R) pixels, green (G) pixels, and blue (B) pixels may constitute one pixel group. Meanwhile, if necessary, the light emitting diodes may be white light emitting diodes each including yellow phosphor powder. In this case, red phosphor powder, green phosphor powder, and blue phosphor powder may be disposed on the white light emitting diode to form a pixel. A black matrix can be placed between the phosphors to increase the contrast ratio. In other words, the black matrix can improve the contrast. Therefore, it is possible to design a full color display in which a red (R) pixel, a green (G) pixel, and a blue (B) pixel constitute one primitive by applying red phosphor and green phosphor to a blue semiconductor light emitting diode. Device.
萤光贴片包含萤光粉，其是由具高稳定发光特性的材料所制成，例如石榴石是(Ganet)、硫化物(Sulfate)、氮化物(Nitrate)、硅酸盐(Silicate)、铝酸盐(Aluminate)或其上述材料的任意组合，但不以此为限，其波长约为300nm至700nm。其中萤光粉料141的粒径为1～25μm。The fluorescent patch comprises a phosphor powder, which is made of a material having high stable luminescent properties, such as garnet, (Sulfate), nitride (Nitrate), silicate (Silicate), Aluminate or any combination thereof, but not limited thereto, has a wavelength of about 300 nm to 700 nm. The phosphor powder 141 has a particle diameter of 1 to 25 μm.
萤光贴片的制法大致包括以下步骤：首先，将萤光粉混入可透光的硅胶，并利用均质机使萤光粉与硅胶混合均匀形成一胶体；接着，以喷涂或湿式涂布的方式把前一步骤的胶体成型于可撕除透光基材上，即形成一萤光胶层；然后，先进行萤光胶层预测试，使色温达到目标色温，再于该萤光胶层表面涂覆一层厚度为50～200μm的透明硅胶，即为萤光贴片。The method for preparing a fluorescent patch generally comprises the following steps: first, mixing the fluorescent powder into the transparent silica gel, and mixing the fluorescent powder with the silica gel by a homogenizer to form a colloid; then, spraying or wet coating The method of forming the gel of the previous step on the light-transmissive substrate to form a phosphor layer; then, pre-testing the phosphor layer to achieve the target color temperature, and then the phosphor The surface of the layer is coated with a transparent silica gel having a thickness of 50 to 200 μm, which is a fluorescent patch.
在本实施例中，发光二极管像素为覆晶式发光二极管，载体可以是薄膜晶体管(Thin Film Transistor，TFT)电路基板，TFT电路基板包含多条扫描线(导体线路)与多条数据线(金属导通层)，每条扫描线(导体线路)与每一列发光二极管电性连接，每条数据线(金属导通层)与每一行发光二极管电性连接，每一发光二极管像素还包括一TFT，用以控制每一发光二极管发光与否。In this embodiment, the LED pixel is a flip-chip LED, the carrier may be a Thin Film Transistor (TFT) circuit substrate, and the TFT circuit substrate includes a plurality of scan lines (conductor lines) and a plurality of data lines (metal a conductive layer), each scan line (conductor line) is electrically connected to each column of light emitting diodes, and each data line (metal conduction layer) is electrically connected to each row of light emitting diodes, and each of the LED pixels further includes a TFT To control whether each LED emits light or not.
在本实施例中，发光二极管像素还包括一P极电极及一N极电极，用以分别与对应的导体线路及金属导通层电性连接，P极电极及N极电极分别设置于P极半导体及N极半导体上。In this embodiment, the LED pixel further includes a P pole electrode and an N pole electrode for electrically connecting to the corresponding conductor line and the metal conduction layer, respectively, and the P pole electrode and the N pole electrode are respectively disposed on the P pole. Semiconductor and N-pole semiconductors.
在本实施例中，发光二极管像素还包括一P极电极及一N极电极，用以分别与对应的 金属导通层及导体线路电性连接，P极电极及N极电极分别设置于P极半导体及N极半导体上。In this embodiment, the LED pixel further includes a P pole electrode and an N pole electrode for respectively corresponding to The metal conduction layer and the conductor line are electrically connected, and the P pole electrode and the N pole electrode are respectively disposed on the P pole semiconductor and the N pole semiconductor.
为了实现小间距显示装置，构想将LED显示屏的矩阵应用电路与LED磊晶晶圆的线路设计统合，实现单一晶圆片即为发光二极管矩阵。其中LED所发出光源以UV光(包含UVA、UVB、UVC)及短波蓝光为优先。利用列扫描的方式控制发光二极管像素，使各独立发光二极管像素可以具有各自的驱动电流及发光时间，即可调整发光强度。在发光二极管矩阵上贴附含有RGB萤光粉的萤光贴片矩阵，使发光二极管像素用于激发对应的萤光贴片像素的萤光粉，形成全彩显示装置。其中，UVA波长约为320～400nm，UVB波长约为280～320nm，UVC波长约为100～280nm。In order to realize a small-pitch display device, it is conceived to integrate the matrix application circuit of the LED display screen with the circuit design of the LED epitaxial wafer, so that a single wafer is a light-emitting diode matrix. Among them, the light source emitted by the LED takes priority as UV light (including UVA, UVB, UVC) and short-wave blue light. The LED pixels are controlled by means of column scanning, so that the individual LED pixels can have respective driving currents and lighting times, and the luminous intensity can be adjusted. A fluorescent patch matrix containing RGB phosphor powder is attached to the LED matrix, and the LED pixels are used to excite the phosphor powder of the corresponding fluorescent patch pixel to form a full color display device. Among them, the UVA wavelength is about 320 to 400 nm, the UVB wavelength is about 280 to 320 nm, and the UVC wavelength is about 100 to 280 nm.
本实施例利用有机染料混合光致抗蚀剂，并配合黄光微影制程将有机染料以(A)以光致抗蚀剂型式直接涂布于LED芯片上，使期被激发成RGB三色光形成显示阵列，(B)将有机染料通过黄光微影制程涂布于film材上形成如RGB color filter再贴合到白光LED形成阵列(C)直接作成R/G/B有机染料film材后，利用裁切方式再贴合到白光阵列芯片，形成RGB阵列显示。In this embodiment, the organic dye is mixed with the photoresist, and the organic dye is directly coated on the LED chip with (A) in a photoresist pattern in combination with the yellow light lithography process, so that the RGB three-color light is formed and displayed. Array, (B) the organic dye is applied to the film material by a yellow light lithography process to form an RGB color filter and then bonded to a white LED forming array (C) directly into an R/G/B organic dye film material, and then used for cutting The method is then attached to the white light array chip to form an RGB array display.
有机染料之前并无和光致抗蚀剂制程结合，结合光致抗蚀剂制程，可达到微小，甚至micro等级下的矩阵RGB多彩显示模式。Organic dyes have not been combined with the photoresist process before, combined with the photoresist process, can achieve a small, even micro-level matrix RGB colorful display mode.
利用dye转换效率高且可溶于光致抗蚀剂并配合黄光微影制程，在极小化的LED(<100um)芯片上形成RGB显示阵列方式。Using dye conversion efficiency and soluble in photoresist and with yellow lithography process, RGB display array is formed on the minimized LED (<100um) chip.
(A)以光致抗蚀剂型式直接涂布于LED芯片上，使期被激发成RGB三色光形成显示阵列，(B)将有机染料通过黄光微影制程涂布于film材上形成如RGB color filter再贴合到白光LED形成阵列(C)直接作成R/G/B有机染料film材后，利用裁切方式再贴合到白光阵列芯片，形成RGB阵列显示。(A) directly coating the LED chip on the photoresist chip, so as to be excited into RGB three-color light to form a display array, and (B) coating the organic dye on the film material by a yellow light lithography process to form, for example, RGB color The filter is further bonded to the white LED forming array (C) and directly formed into an R/G/B organic dye film material, and then bonded to the white light array chip by a cutting method to form an RGB array display.
本发明提供一种矩阵式显示装置，包括矩阵式芯片排列及线路布植、利用Passivation隔离正负极线路、垂直式矩阵芯片制程、水平式矩阵芯片制程、萤光贴片、单一贴片内具有两种及以上不同波段的萤光粉、矩阵式萤光贴片设计、RGB萤光粉排列方式、RGBY萤光粉排列、贴片接合方式、LED排列方式(RGB群聚或是等间距)、控制电路系统。The invention provides a matrix type display device, which comprises a matrix chip arrangement and a line arrangement, a Passivation isolation positive and negative line, a vertical matrix chip process, a horizontal matrix chip process, a fluorescent patch, and a single patch. Two or more different wavelengths of phosphor powder, matrix fluorescent patch design, RGB phosphor powder arrangement, RGBY phosphor powder arrangement, patch bonding method, LED arrangement (RGB clustering or equal spacing), Control circuitry.
本发明在于利用一非接触式的激光共晶工艺，利用激光直接聚焦于芯片金属电极与基板金属接垫做高温共融，完成芯片固晶制程。The invention utilizes a non-contact laser eutectic process to directly focus on the metal electrode of the chip and the metal pad of the substrate to perform high temperature co-fusion, thereby completing the chip solid crystal process.
晶片芯片尺寸往更小至Micro LED已是趋势，传统的共晶用flux或锡膏都有颗粒粒径过大，或是胶量控制问题，如上flux过Reflow也可能造成板翘而影响后续LED封装制程。The chip chip size is smaller to the Micro LED. The traditional eutectic flux or solder paste has too large particle size, or the amount of glue control. The above Flux may also cause the plate to tilt and affect the subsequent LED. Packaging process.
本发明利用laser bonding工艺可局部加温避免板翘，且激光聚焦焦点可以控制与电极及接垫大小相近，并可不加锡膏或银胶作电极及接垫直接的金属共融。The invention utilizes the laser bonding process to locally warm to avoid the warpage, and the laser focusing focus can be controlled to be similar to the size of the electrodes and the pads, and can directly be used for the metal infusion without the solder paste or the silver paste as the electrodes and the pads.
其中，脉冲激光从芯片上直接垂直穿透加热电极或接垫，利用脉冲激光长波长808 ～1064nm，激光不被芯片GaN材料吸收特性，垂直入射至芯片电极与基板接垫之间胶体，或没胶体，直接加温让pad与基板金属共融。Wherein, the pulsed laser directly penetrates the heating electrode or the pad from the chip vertically, and uses the pulsed laser long wavelength 808 ~1064nm, the laser is not absorbed by the chip GaN material, perpendicularly incident to the colloid between the chip electrode and the substrate pad, or no colloid, directly heated to allow the pad and the substrate metal to be infused.
此外，脉冲激光聚焦加热基板下导通柱(具有导电及导热的第一材料)，利用脉冲激光(波长300～1200nm)聚焦能量至基板背面金属导通柱，利用热传导加热基板表面金属接垫与芯片表面电极产生共晶。In addition, the pulsed laser focuses on the substrate under the conductive pillar (the first material having conductivity and heat conduction), and uses a pulsed laser (wavelength of 300 to 1200 nm) to focus energy to the metal conduction post on the back surface of the substrate, and heats the metal surface of the substrate surface by thermal conduction. The surface electrode of the chip produces a eutectic.
本实施例可以利用蓝光或UV光(包含UVA、UVB、UVC)LED阵列，搭配波长转换阵列(包含萤光粉阵列、染料阵列、颜料阵列或其任意组合阵列)，产生全彩显示装置或红外线发光阵列。This embodiment can utilize a blue or UV light (including UVA, UVB, UVC) LED array with a wavelength conversion array (including a phosphor array, a dye array, a pigment array, or any combination thereof) to produce a full color display device or infrared Light-emitting array.
本实施例的发光二极管在利用金属有机化学气相沉积(Metal Organic Chemical.Vapor Phase Deposition,MOCVD)制程方式形成多重量子井活性层(MQW active layer)之后，可以利用分子束磊晶(Molecular beam epitaxy,MBE)制程方式形成穿隧通道层(Tunnel Junction Layer)，用以增加出光效率与元件运作性能。The light-emitting diode of this embodiment can utilize Molecular beam epitaxy after forming a multiple quantum well active layer (MQW active layer) by a metal organic chemical vapor deposition (MOCVD) process. The MBE) process forms a Tunnel Junction Layer to increase light extraction efficiency and component operation performance.
以上说明了依据本发明的各较佳实施例的显示装置，而上述实施例的技术内容并非用来限制本发明的保护范畴。本发明所属技术领域技术人员可轻易完成的改变或均等性的安排均属于本发明所主张的范围，本发明的权利保护范围应以权利要求为准。 The display device according to various preferred embodiments of the present invention has been described above, and the technical content of the above embodiments is not intended to limit the scope of protection of the present invention. The scope of the present invention is to be construed as being limited by the scope of the present invention.

Claims (20)

  1. 一种显示装置，包括：A display device comprising:
    一发光二极管矩阵，包括：A matrix of light emitting diodes comprising:
    多个发光二极管像素，该等发光二极管像素各包含一第一极性半导体层、一第二极性半导体及一量子井发光结构层，该量子井发光结构层设置于该第一及该第二极性半导体层之间，其中，沿着一列方向，该等发光二极管像素是以一第一蚀刻沟槽相分隔，而沿着一行方向，该等发光二极管像素的该等第一极性半导体层是以一第二蚀刻沟槽相分隔、该等第二极性半导体层是相连接；a plurality of light emitting diode pixels each including a first polarity semiconductor layer, a second polarity semiconductor, and a quantum well light emitting structure layer, wherein the quantum well light emitting structure layer is disposed on the first and second Between the polar semiconductor layers, wherein the LED pixels are separated by a first etching trench along a column direction, and the first polar semiconductor layers of the LED pixels along a row direction Separated by a second etched trench, the second polar semiconductor layers being connected;
    一绝缘层，覆盖该第一蚀刻沟槽及该第二蚀刻沟槽，并裸露出该等第一极性半导体层的上表面；An insulating layer covering the first etched trench and the second etched trench and exposing an upper surface of the first polar semiconductor layer;
    多个金属导通层，沿着该行方向延伸形成，且分别电性连接该等发光二极管像素的该等第二极性半导体；及a plurality of metal conduction layers extending along the row direction and electrically connecting the second polarity semiconductors of the LED pixels respectively;
    多个导体线路，沿着该列方向延伸形成，且分别电性连接该等发光二极管像素的该等第一极性半导体；以及a plurality of conductor lines extending along the column direction and electrically connecting the first polar semiconductors of the LED pixels respectively;
    一萤光体矩阵，设置于该发光二极管矩阵上，包括多个萤光体像素，该等萤光体像素分别对应于该等发光二极管像素。A phosphor matrix is disposed on the LED matrix and includes a plurality of phosphor pixels, and the phosphor pixels respectively correspond to the LED pixels.
  2. 如权利要求1所述的显示装置，其中，沿着该行方向，该金属导通层形成于该等第二极性半导体的下表面，而沿着该列方向，该导体线路形成于该等第一极性半导体的该等上表面。The display device according to claim 1, wherein the metal conduction layer is formed on a lower surface of the second polar semiconductor along the row direction, and the conductor line is formed in the column direction The upper surfaces of the first polar semiconductor.
  3. 如权利要求1所述的显示装置，其中，沿着该列方向，该第二极性半导体是宽于该第一极性半导体及该量子井发光结构层；其中，沿着该行方向，该金属导通层形成于该第二极性半导体的上表面，而沿着该列方向，该导体线路形成于该等第一极性半导体的该等上表面。The display device of claim 1, wherein the second polarity semiconductor is wider than the first polarity semiconductor and the quantum well light emitting structure layer along the column direction; wherein, along the row direction, the A metal conduction layer is formed on an upper surface of the second polar semiconductor, and the conductor lines are formed on the upper surfaces of the first polar semiconductors along the column direction.
  4. 如权利要求1、2或3所述的显示装置，其中，该发光二极管矩阵还包括一非导电载体基板，用以承载该等发光二极管像素。The display device of claim 1, 2 or 3, wherein the LED matrix further comprises a non-conductive carrier substrate for carrying the LED pixels.
  5. 如权利要求1、2或3所述的显示装置，其中，该第一极性半导体及该第二极性半导体分别为一N极半导体及一P极半导体。The display device according to claim 1, 2 or 3, wherein the first polarity semiconductor and the second polarity semiconductor are an N-pole semiconductor and a P-pole semiconductor, respectively.
  6. 如权利要求1、2或3所述的显示装置，还包括一屏蔽层，设置于该等发光二极管像素之间、及/或该等萤光体像素之间。The display device of claim 1, 2 or 3, further comprising a shielding layer disposed between the LED pixels and/or between the phosphor pixels.
  7. 如权利要求1所述的显示装置，其中，该等萤光体像素至少包含多个非萤光粉部，该非萤光粉部包含颜料或染料。The display device according to claim 1, wherein the phosphor pixels comprise at least a plurality of non-fluorescent powder portions, and the non-fluorescent powder portion comprises a pigment or a dye.
  8. 如权利要求7所述的显示装置，其中，该非萤光粉部还包含一光致抗蚀剂，该颜料或染料与该光致抗蚀剂相混合。The display device of claim 7, wherein the non-fluorescent powder portion further comprises a photoresist, the pigment or dye being mixed with the photoresist.
  9. 如权利要求7或8所述的显示装置，其中，该等萤光体像素更含多个透光部，该 等透光部与该等非萤光粉部交错排列。The display device according to claim 7 or 8, wherein the phosphor pixels further comprise a plurality of light transmitting portions, The equal light transmitting portion and the non-fluorescent powder portions are alternately arranged.
  10. 如权利要求7或8所述的显示装置，其中，该等萤光体像素更含多个萤光粉部，该等萤光粉部与该等非萤光粉部交错排列。The display device according to claim 7 or 8, wherein the phosphor pixels further comprise a plurality of phosphor powder portions, and the phosphor powder portions are alternately arranged with the non-fluorescent powder portions.
  11. 如权利要求7或8所述的显示装置，其中，该等萤光体像素直接设置于该发光二极管矩阵上。The display device according to claim 7 or 8, wherein the phosphor pixels are directly disposed on the matrix of the light emitting diodes.
  12. 如权利要求7或8所述的显示装置，还包含一透光基板，其中该萤光体矩阵直接形成于该透光基板，而该透光基板设置于该发光二极管矩阵上。The display device of claim 7 or 8, further comprising a transparent substrate, wherein the phosphor matrix is directly formed on the transparent substrate, and the transparent substrate is disposed on the LED matrix.
  13. 一种显示装置，包括：A display device comprising:
    一基座，具有相垂直的一第一方向及一第二方向；a pedestal having a first direction and a second direction perpendicular to each other;
    多个发光二极管条，被该基座承载，且各包含多个发光二极管，该等发光二极管各包含一磊晶基板及一半导体磊晶层、一第一金属电极及一第二金属电极，该半导体磊晶层设置于该磊晶基板上，该第一及该第二金属电极电性连接该该半导体磊晶层，其中，沿着该第二方向，该等发光二极管条是相平行排列，而沿着该第一方向，该等发光二极管是相平行排列；a plurality of LED strips are carried by the pedestal, and each of the plurality of LED strips includes a plurality of light emitting diodes, each of the light emitting diodes including an epitaxial substrate and a semiconductor epitaxial layer, a first metal electrode and a second metal electrode. The semiconductor epitaxial layer is disposed on the epitaxial substrate, and the first and second metal electrodes are electrically connected to the semiconductor epitaxial layer, wherein the LED strips are arranged in parallel along the second direction. And along the first direction, the light emitting diodes are arranged in parallel;
    多个第一走线，沿着该第一方向相平行排列，且分别电性连接该等发光二极管的该等第一金属电极；以及a plurality of first traces arranged in parallel along the first direction and electrically connected to the first metal electrodes of the light emitting diodes, respectively;
    多个第二走线，沿着该第二方向相平行排列，且分别电性连接该等发光二极管的该等第二金属电极。The plurality of second traces are arranged in parallel along the second direction and electrically connected to the second metal electrodes of the light emitting diodes.
  14. 如权利要求13所述的显示装置，其中，该发光二极管具有垂直电流导通的结构、水平电流导通的结构或覆晶的结构。The display device according to claim 13, wherein the light emitting diode has a structure in which a vertical current is conducted, a structure in which a horizontal current is conducted, or a structure in which a flip chip is formed.
  15. 如权利要求13所述的显示装置，其中，该等第一走线及该等第二走线皆设置于该基座上。The display device as claimed in claim 13 , wherein the first traces and the second traces are disposed on the pedestal.
  16. 如权利要求13所述的显示装置，其中，该基座包含相平行设置的一第一基座及一第二基座，该等发光二极管条设置于该第一基座及该第二基座之间，而该等第一走线设置于该第一基座上、该等第二走线设置于该第二基座上。The display device as claimed in claim 13 , wherein the pedestal comprises a first pedestal and a second pedestal disposed in parallel, the LED strips are disposed on the first pedestal and the second pedestal The first traces are disposed on the first pedestal, and the second traces are disposed on the second pedestal.
  17. 如权利要求13至16任一所述的显示装置，还包括一萤光结构，覆盖该些发光二极管条的至少一者以上。The display device according to any one of claims 13 to 16, further comprising a fluorescent structure covering at least one of the plurality of light emitting diode strips.
  18. 如权利要求13所述的显示装置，其中，该第一金属电极及该第一走线之间，或是该第二金属电极与该第二走线之间，是形成有一激光脉冲所致的界面层。The display device according to claim 13, wherein a laser pulse is formed between the first metal electrode and the first trace or between the second metal electrode and the second trace. Interface layer.
  19. 如权利要求18所述的显示装置，其中，该界面层是由该第一金属电极及该第一走线共融、或是由该第二金属电极与该第二走线共融而形成。The display device according to claim 18, wherein the interface layer is formed by fusing the first metal electrode and the first trace or by fusing the second metal electrode with the second trace.
  20. 如权利要求18所述的显示装置，其中，该界面层是由一胶体热融而形成。 The display device of claim 18, wherein the interface layer is formed by a colloidal thermal fusion.
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI672683B (en) * 2018-04-03 2019-09-21 友達光電股份有限公司 Display panel
TW201947636A (en) * 2018-05-16 2019-12-16 財團法人工業技術研究院 Method for manufacturing display array
CN110504281A (en) 2018-05-16 2019-11-26 财团法人工业技术研究院 The manufacturing method of array of display
JP2021043378A (en) * 2019-09-12 2021-03-18 株式会社ジャパンディスプレイ Display and method for manufacturing display
TWI730472B (en) * 2019-10-25 2021-06-11 進化光學有限公司 Full color led display panel using isolation lines of laser scribing and manufacturing method thereof
CN114068503A (en) 2020-08-10 2022-02-18 深超光电（深圳）有限公司 Miniature LED display panel and preparation method thereof
TWI752595B (en) * 2020-08-18 2022-01-11 東捷科技股份有限公司 Self-illuminating pixel device
CN115692572A (en) * 2022-09-23 2023-02-03 业成科技（成都）有限公司 LED wafer, circuit board, display and preparation method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101324306A (en) * 2007-06-15 2008-12-17 统宝光电股份有限公司 Light-emitting diode arrays and methods of manufacture
TW201138059A (en) * 2010-04-19 2011-11-01 Hon Hai Prec Ind Co Ltd LED array encapsulation structure and manufacture method thereof
CN103227274A (en) * 2012-01-31 2013-07-31 长春藤控股有限公司 Packaging body for LED wafer and manufacturing method of packaging body
CN104009187A (en) * 2014-05-29 2014-08-27 四川虹视显示技术有限公司 Multicolor organic light emitting diode lighting (OLED) device
CN104584110A (en) * 2012-08-21 2015-04-29 Lg电子株式会社 Display device using semiconductor light emitting device and method of fabricating the same
US9406656B2 (en) * 2014-10-29 2016-08-02 Lg Electronics Inc. Display device using semiconductor light emitting device and method of fabricating the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005022654A2 (en) * 2003-08-28 2005-03-10 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
EP1715521B1 (en) * 2005-04-21 2012-02-22 C.R.F. Società Consortile per Azioni Use of a transparent display having light-emitting diodes (LED) in a motor vehicle
US8642363B2 (en) * 2009-12-09 2014-02-04 Nano And Advanced Materials Institute Limited Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology
KR101422037B1 (en) * 2012-09-04 2014-07-23 엘지전자 주식회사 Display device using semiconductor light emitting device
CN103456729B (en) * 2013-07-26 2016-09-21 利亚德光电股份有限公司 Light emitting diode (LED) display screen
US9831387B2 (en) * 2014-06-14 2017-11-28 Hiphoton Co., Ltd. Light engine array

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101324306A (en) * 2007-06-15 2008-12-17 统宝光电股份有限公司 Light-emitting diode arrays and methods of manufacture
TW201138059A (en) * 2010-04-19 2011-11-01 Hon Hai Prec Ind Co Ltd LED array encapsulation structure and manufacture method thereof
CN103227274A (en) * 2012-01-31 2013-07-31 长春藤控股有限公司 Packaging body for LED wafer and manufacturing method of packaging body
CN104584110A (en) * 2012-08-21 2015-04-29 Lg电子株式会社 Display device using semiconductor light emitting device and method of fabricating the same
CN104009187A (en) * 2014-05-29 2014-08-27 四川虹视显示技术有限公司 Multicolor organic light emitting diode lighting (OLED) device
US9406656B2 (en) * 2014-10-29 2016-08-02 Lg Electronics Inc. Display device using semiconductor light emitting device and method of fabricating the same

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