WO2018026133A1 - Dispositif de commutation et dispositif de conversion de puissance - Google Patents

Dispositif de commutation et dispositif de conversion de puissance Download PDF

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Publication number
WO2018026133A1
WO2018026133A1 PCT/KR2017/007998 KR2017007998W WO2018026133A1 WO 2018026133 A1 WO2018026133 A1 WO 2018026133A1 KR 2017007998 W KR2017007998 W KR 2017007998W WO 2018026133 A1 WO2018026133 A1 WO 2018026133A1
Authority
WO
WIPO (PCT)
Prior art keywords
transistor
switch
node
terminal
switching
Prior art date
Application number
PCT/KR2017/007998
Other languages
English (en)
Korean (ko)
Inventor
니콜레이비치 올유닌니콜레이
니콜라에비치 크리프코브알렉산더
게나디비치 체노카로브알렉산더
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from RU2016132374A external-priority patent/RU2628211C1/ru
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to EP17837185.2A priority Critical patent/EP3477861B1/fr
Priority to US16/321,096 priority patent/US10771055B2/en
Publication of WO2018026133A1 publication Critical patent/WO2018026133A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state

Definitions

  • the first transistor VT1 and the second transistor VT2 are N-type MOSFETs and the third switch VT3 is a P-type MOSFET will be described.
  • the first transistor VT1 is changed from the turned on state to the turned off state.
  • the third switch VT3 is turned on because the gate is directly connected to the gate of the first transistor VT1 and has a polarity opposite to that of the first transistor VT1.
  • the node A NODE_A is connected to the first voltage source U1 through the third switch VT3, and thus, the potential of the first voltage source U1 or the first voltage source U1. It has a potential close to that of.
  • the third switch VT3 is turned on, the gate and the source of the second transistor VT2 have almost the same potential, so that the gate-source voltage of the second transistor VT2 is nearly zero, The second transistor VT2 is turned off.
  • node A NODE_A has the same potential as the first voltage source U1 and does not remain in a floating state.
  • FIG. 2 is a diagram illustrating a structure of a switching device 100b according to an embodiment.
  • the first diode D1 prevents an incorrect polarity voltage from being applied to the third switch VT3. That is, the first diode D1 generates a current path between the node A (NODE_A) and the node B (NODE_B) when the potential of the node A (NODE_A) is higher than the potential of the node B (NODE_B). The potential of is dropped to the potential of the node B (NODE_B).
  • FIG. 3 is a diagram illustrating a structure of a switching device 100c according to an embodiment.
  • the first AC-DC converter 510 converts the input AC current input from the power source 560 into a DC current of the first voltage level and outputs the DC current to the inverter 520.
  • the first AC-DC converter 510 may have a rectifier structure.
  • the first voltage level is a voltage higher than the input AC voltage, and may be, for example, a voltage level in the range of 300V to 400V.
  • the first AC-DC converter 510 may be implemented as a substitution of an electrolytic capacitor by ceramic capacitors.
  • the second AC-DC converter 540 converts the high frequency low voltage AC output from the transformer 530 into DC of a required voltage level and outputs the DC as the output of the power converter 500a.
  • the second AC-DC converter 540 may have a rectifier structure.
  • the second AC-DC converter 540 may output DC converted to 5V, which is a rated output voltage level of the power converter 500a.
  • FIG. 8 illustrates a structure of a switching device 810 according to a comparative example and a switching device 820 according to an embodiment of the present disclosure.
  • 11 is an example of calculating a volume of a power converter according to an embodiment.
  • the power conversion apparatus may have a power density of about 25 or more, as shown in FIG. 11. According to embodiments of the present disclosure, by reducing the volume of the transformer by the high voltage high frequency switching device, there is an effect that can increase the power density of the power conversion device.
  • the power conversion device based on the switching device according to the disclosed embodiments can be simulated using the software package Advanced Design System ADS 2011.6 for electrical simulation.
  • the simulation resulted in a significant increase in operating frequency at sufficiently high efficiency (approximately 85%).
  • the switching device previously supported up to 100-300 kHz was able to support up to 13.56 MHz by applying one embodiment.
  • a high DC voltage up to 400V generated by rectifying the main power supply voltage 220V, 50 or 60Hz may be input to an inverter including a switching device.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)
  • Inverter Devices (AREA)

Abstract

Un aspect d'un mode de réalisation de la présente invention concerne un dispositif de commutation comprenant : un commutateur cascode qui comprend au moins deux transistors connectés en série et auxquels un signal de commande de commutation est fourni en entrée; et un troisième commutateur auquel le signal de commande de commutation est fourni en entrée, les deux transistors ou plus comprenant un premier transistor ayant une borne de commande à laquelle le signal de commande de commutation est fournir en entrée, et un deuxième transistor ayant une borne de commande connectée à une première source de tension, et le troisième commutateur étant connecté entre la borne de commande et une première borne du deuxième transistor, et étant mis hors tension lorsque le premier transistor est activé, et étant activé lorsque le premier transistor est mis hors tension.
PCT/KR2017/007998 2016-08-05 2017-07-25 Dispositif de commutation et dispositif de conversion de puissance WO2018026133A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP17837185.2A EP3477861B1 (fr) 2016-08-05 2017-07-25 Dispositif de commutation et dispositif de conversion de puissance
US16/321,096 US10771055B2 (en) 2016-08-05 2017-07-25 Switching device and power conversion device

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
RU2016132374 2016-08-05
RU2016132374A RU2628211C1 (ru) 2016-08-05 2016-08-05 Высокочастотный переключатель для компактного модуля преобразователя энергии
KR10-2017-0039944 2017-03-29
KR1020170039944A KR102313483B1 (ko) 2016-08-05 2017-03-29 스위칭 장치 및 전력 변환 장치

Publications (1)

Publication Number Publication Date
WO2018026133A1 true WO2018026133A1 (fr) 2018-02-08

Family

ID=61073871

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2017/007998 WO2018026133A1 (fr) 2016-08-05 2017-07-25 Dispositif de commutation et dispositif de conversion de puissance

Country Status (1)

Country Link
WO (1) WO2018026133A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6483369B1 (en) * 2001-10-02 2002-11-19 Technical Witts Inc. Composite mosfet cascode switches for power converters
JP2007082351A (ja) * 2005-09-15 2007-03-29 Toshiba Corp 電力変換装置
KR20100125454A (ko) * 2008-10-30 2010-11-30 산켄덴키 가부시키가이샤 스위칭 전원 장치
US20120176040A1 (en) * 2011-01-12 2012-07-12 Kabushiki Kaisha Tokai Rika Denki Seisakusho Indicator drive circuit
KR20140053768A (ko) * 2012-10-26 2014-05-08 페어차일드코리아반도체 주식회사 스위치 제어 회로 및 이를 포함하는 전력 공급 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6483369B1 (en) * 2001-10-02 2002-11-19 Technical Witts Inc. Composite mosfet cascode switches for power converters
JP2007082351A (ja) * 2005-09-15 2007-03-29 Toshiba Corp 電力変換装置
KR20100125454A (ko) * 2008-10-30 2010-11-30 산켄덴키 가부시키가이샤 스위칭 전원 장치
US20120176040A1 (en) * 2011-01-12 2012-07-12 Kabushiki Kaisha Tokai Rika Denki Seisakusho Indicator drive circuit
KR20140053768A (ko) * 2012-10-26 2014-05-08 페어차일드코리아반도체 주식회사 스위치 제어 회로 및 이를 포함하는 전력 공급 장치

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