WO2018018677A1 - 一种高电阻率单晶ZnO基辐射探测器件及其制备方法和应用 - Google Patents

一种高电阻率单晶ZnO基辐射探测器件及其制备方法和应用 Download PDF

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WO2018018677A1
WO2018018677A1 PCT/CN2016/095817 CN2016095817W WO2018018677A1 WO 2018018677 A1 WO2018018677 A1 WO 2018018677A1 CN 2016095817 W CN2016095817 W CN 2016095817W WO 2018018677 A1 WO2018018677 A1 WO 2018018677A1
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layer
wafer
single crystal
zno
resistivity
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黄丰
季旭
董美
严崐
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Sun Yat Sen University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the technical field of radiation detectors. More specifically, it relates to a high resistivity single crystal ZnO-based radiation detector device and a preparation method and application thereof.
  • detectors need to have high sensitivity, miniaturization, and strong anti-irradiation capability.
  • the semiconductor material Compared to the average radiant energy ( ⁇ 30 eV) required for a conventional gas radiation detector to generate a detection signal by gas ionization, the semiconductor material produces an average radiant energy of ⁇ 10 eV for a pair of electron-hole pairs, thus the same radiant energy Under the weak signal, the sensitivity of the semiconductor material is higher than that of the gas.
  • a very thin layer of semiconductor material can effectively convert the absorbed radiant energy.
  • the device has a natural advantage in miniaturization; in addition, the mechanical strength of the semiconductor material itself can be well self-supporting, and it is convenient to integrate and construct the detector array, thereby realizing the acquisition of the target position information.
  • the elemental semiconductor-based X-ray detectors represented by Group IV silicon and germanium are the earliest. Compared with silicon, germanium has the advantage of its relatively large atomic number and low electron-hole pair generation energy, which makes the germanium-based detector have higher efficiency and energy resolution.
  • the technical problem to be solved by the present invention is to overcome the defects and deficiencies of the prior art described above, and to provide a semiconductor device for detecting alpha particles based on a high resistivity single crystal zinc oxide material, the preparation method comprising the following steps
  • the high-resistance single crystal ZnO wafer is prepared by electron beam or thermal evaporation method, and then the wafer is fabricated on a circuit board for testing, and the device performance is tested by using the alpha source, and the device exhibits Good radiation response.
  • the invention adopts a high-resistance ZnO material with superior anti-irradiation ability, wider band gap, higher breakdown electric field strength and the like to manufacture the radiation detector device.
  • the obtained device has a simple structure, low cost and high repeatability.
  • Another object of the invention is a method of making the high resistivity single crystal ZnO-based radiation detector device.
  • Another object of the present invention is to provide an application of the high resistivity single crystal ZnO-based radiation detector device.
  • a method for preparing a high resistivity single crystal ZnO-based radiation detector comprises the following steps:
  • step S2 The wafer processed in step S2 is bonded to the circuit board, and the wafer is connected to the circuit board through a gold wire.
  • the method of vapor deposition in step S2 is a thermal evaporation method or an electron beam evaporation method.
  • the double-sided vapor-deposited metal electrode layer of the high-resistivity single-crystal ZnO wafer in step S2 is specifically: depositing an inner metal layer and an outer metal layer on one side of the high-resistivity single crystal ZnO wafer, wherein the inner layer The metal layer is a nickel layer or a titanium layer, and the outer metal layer is a gold layer.
  • An indium layer is deposited on the other side of the high-resistivity single crystal ZnO wafer, or an electrode layer of the same nickel layer, titanium layer or aluminum layer is bonded to the gold layer or the silver layer, that is, in the high resistivity single crystal ZnO wafer.
  • the inner metal layer and the outer metal layer are also vapor-deposited, and the inner metal layer is a nickel layer, a titanium layer or an aluminum layer, and the outer metal layer is a gold layer or a silver layer. Further, an indium layer is then evaporated on one side.
  • the nickel layer has a thickness of 4 to 6 nm.
  • the nickel layer has a thickness of 5 nm.
  • the titanium layer has a thickness of 5 to 50 nm.
  • the titanium layer has a thickness of 35 nm.
  • the gold layer has a thickness of 10 to 50 nm.
  • the gold layer has a thickness of 20 nm.
  • the purity of the metal in step S2 is 999 to 9999.
  • the indium layer has a thickness of from 1 m to 500 m.
  • the specific method of bonding the wafer to the circuit board in step S3 is: melting a metal layer on one side by heating, and bonding the wafer to the circuit board by using molten metal.
  • the specific method of bonding the wafer to the circuit board in step S3 is: melting one side of the indium layer by heating, and bonding the wafer to the circuit board by using molten indium.
  • the method for preparing the high-resistivity single crystal ZnO wafer in step S1 is as follows: the single crystal ZnO wafer is placed in a metal lithium electrochemical device, and after constant current discharge treatment, it is placed at 800 to 1000 ° C, 10 to 30 atm.
  • the high-resistivity ZnO single wafer can be obtained by annealing in an oxygen atmosphere for 20 to 28 hours.
  • a controllable discharge process is adopted to realize a high-efficiency injection of lithium in ZnO by utilizing the difference in natural chemical potential between lithium and ZnO.
  • the single crystal ZnO wafer is a low resistance high quality single crystal ZnO wafer.
  • the electrolyte in the lithium metal electrochemical device is 0.5-1.5 M LiPF 6 solution dispersed in ethylene carbonate, ethyl methyl carbonate and carbonic acid in a volume ratio of 2 to 5:2 to 4:2 to 4.
  • the ethyl ester mixed solution was made of Celgard 2400 polyethylene microporous membrane as an electronic separator.
  • the electrolyte in the metal lithium electrochemical device is a 1 M LiPF 6 solution dispersed in a mixed solution of ethylene carbonate, ethyl methyl carbonate and diethyl carbonate in a volume ratio of 4:3:3.
  • the metal lithium electrochemical device is a lithium battery can.
  • the ZnO wafer was placed in a commercial lithium battery structure for constant current discharge treatment.
  • the method for placing a single crystal ZnO wafer in a lithium metal electrochemical device is specifically assembling a single crystal ZnO wafer into a lithium battery case in the following order: a positive shell, a single crystal ZnO wafer, a polyethylene microporous
  • the film, the lithium metal sheet, the flash electrode, the spring electrode, the negative electrode case, and the outer ring are insulating sleeve layers.
  • the constant current discharge treatment is a 2 to 4 uA constant current discharge treatment for 10 to 25 hours.
  • the constant current discharge treatment is a 3 uA constant current discharge treatment for 15 hours.
  • the single crystal ZnO wafer has a size of 10 cm square.
  • the single crystal ZnO wafer has a thickness of 0.2 to 0.5 mm.
  • a 3 uA constant current discharge treatment is performed for 10 hours; when the thickness of the single crystal ZnO wafer is 0.3 mm, a 3 uA constant current discharge treatment is performed for 15 hours; At a thickness of 0.5 mm, a 3 uA constant current discharge treatment was carried out for 25 hours.
  • the ZnO single crystal after the constant current discharge treatment is annealed in an oxygen atmosphere furnace at 800 to 900 ° C and 15 to 25 atm for 22 to 26 hours.
  • the ZnO single crystal after the constant current discharge treatment is placed in a high pressure oxygen atmosphere at 800 ° C and 20 atm. Annealed in the furnace for 24 hours.
  • the high-resistivity single crystal ZnO-based radiation detector device prepared by the above method, and the application of the high-resistivity single crystal ZnO-based radiation detector device in preparing a radiation detector are also within the protection scope of the present invention. Inside.
  • Electrode preparation was carried out on a ZnO single wafer by thermal evaporation and electron beam evaporation.
  • the device is irradiated with an alpha source to test the device's response to radiation.
  • the invention provides a method for manufacturing a high resistivity single crystal ZnO-based radiation detector, and verifies its response to a low beam single energy or dual energy alpha source, and exhibits a good radiation response.
  • the invention adopts a high-resistance ZnO material with stronger anti-irradiation ability, wider band gap, higher breakdown electric field strength and the like to manufacture the radiation detector component, and the obtained device has the advantages of simple structure, simple manufacturing process and low cost. It has high repeatability, high practicability and good prospects for popularization and application.
  • the invention adopts a high-quality and high-resistivity ZnO single crystal as a functional material, and has strong radiation resistance, which determines that the device can work under strong radiation conditions such as nuclear science and technology and space.
  • the invention adopts a more mature method of thermal evaporation or electron beam evaporation, which has the characteristics of uniform and controllable film thickness, ensures high quality electrode quality, and can realize electrode evaporation of most metals, and selects electrodes. Control device performance provides a broad manufacturing space.
  • the invention adopts a single-energy alpha source with a low beam current as a radiation source, which can better reflect the sensitivity of the device to the detection signal, and can better reflect the discrimination degree of the device on the detection signal energy.
  • FIG. 1 is a sequence diagram of an electrochemical cell configuration in which a low-resistance zinc oxide crystal lattice is placed in a metal lithium battery can when a high-resistivity single crystal ZnO is prepared.
  • FIG. 2 is a view showing the assembly structure of the high-resistivity ZnO device of Embodiment 1.
  • Example 3 is the alpha particle test response data of Example 1.
  • FIG. 4 is a view showing the assembly structure of the high-resistivity ZnO device of Embodiment 2.
  • Figure 5 is an alpha particle test response data of Example 2.
  • a 10 cm square high-quality low-resistance zinc oxide wafer was assembled into a commercial CR 2032 battery case in the order shown in Fig. 1 at room temperature in an argon-filled glove box, wherein the electrolyte used was 1 M LiPF6.
  • the solution was dispersed in a mixed solution of ethylene carbonate, ethyl methyl carbonate and diethyl carbonate in a volume ratio of 4:3:3, and a Celgard 2400 polyethylene microporous membrane was used as an electronic separator.
  • the LAND BT2013A multi-channel battery test system performs constant current discharge treatment at room temperature to realize the injection of lithium into the ZnO single crystal.
  • the high-quality low-resistance zinc oxide wafer used in this example had a thickness of 0.3 mm, a constant current discharge current of 3 ⁇ A, and a discharge time of 15 hours.
  • the lithium zinc oxide wafer treated in the above step (1) is placed in a high temperature and high pressure annealing furnace to remove lithium in the crystal lattice to obtain a high resistivity ZnO single wafer.
  • the lithium removing device used in this embodiment can withstand a high temperature and high pressure oxygen atmosphere.
  • the oxygen pressure is set to 20 standard atmospheric pressure
  • the temperature is set to 800 degrees Celsius
  • the annealing time is set to 24 hours.
  • a double-layer metal electrode of 5 nm nickel and 20 nm gold was vapor-deposited on the surface of the high-resistivity ZnO wafer by a hot/electron beam evaporation method in the order shown in FIG. 2, wherein the purity of the metal used was 999 ⁇ . 9999.
  • a thicker (1m to 500m) metal indium electrode is then plated on the other side of the ZnO wafer.
  • Both sides of the electrode form a good electrical contact.
  • the wafer is bonded to the circuit board by means of a heated device using molten indium.
  • the wafer is connected to the circuit board through a gold wire.
  • the resulting high resistivity single crystal ZnO-based radiation detector is placed in a vacuum to reduce the energy loss of the alpha particles during flight.
  • the detector response test used a 5.486 MeV alpha radiation detector from a 241 Am source. It is counted by the front-end amplifier, and the signal is then transmitted to the main amplifier and transmitted to the multi-channel analyzer, and finally the signal is collected by the microcomputer, as shown in FIG.
  • a high-resistivity ZnO single crystal was prepared in the same manner as in Example 1.
  • a double-layered metal electrode of 35 nm titanium and 20 nm gold vapor-deposited on the surface of one side of the high-resistivity ZnO wafer was subjected to a hot/electron beam evaporation method in the order shown in FIG.
  • a thicker metal indium electrode is then plated on the other side of the ZnO wafer.
  • Both sides of the electrode form a good electrical contact.
  • the wafer is bonded to the circuit board by means of a heated device using molten indium.
  • the wafer is connected to the circuit board through a gold wire.
  • the resulting high resistance ZnO-based detector device is placed in a vacuum to reduce the energy loss of the alpha particles during flight.
  • the detector response test uses a 243 Am- 244 Cm dual-energy radiation alpha source to illuminate the detector. It is counted by the front-end amplifier, and the signal is then transmitted to the main amplifier and transmitted to the multi-channel analyzer, and finally the signal is collected by the microcomputer, as shown in FIG.
  • a high-resistivity ZnO single crystal was prepared in the same manner as in Example 1.
  • a double-layer metal electrode of 4 nm nickel and 10 nm gold was vapor-deposited on the surface of the high-resistivity ZnO wafer by a hot/electron beam evaporation method in the order shown in FIG. 2, wherein the purity of the metal used was 999 ⁇ . 9999.
  • a thicker (1m to 500m) metal indium electrode is then plated on the other side of the ZnO wafer.
  • Both sides of the electrode form a good electrical contact.
  • the wafer is bonded to the circuit board by means of a heated device using molten indium.
  • the wafer is connected to the circuit board through a gold wire.
  • the resulting high resistance ZnO-based detector device is placed in a vacuum to reduce the energy loss of the alpha particles during flight.
  • the detector response test uses a 243 Am- 244 Cm dual-energy radiation alpha source to illuminate the detector. It is counted by the front-end amplifier, and the signal is then transmitted to the main amplifier and transmitted to the multi-channel analyzer, and finally the signal is collected by the microcomputer.
  • the high resistivity single crystal ZnO detector has obvious practical ability in the field of radiation detection, especially its effective response to the dual alpha source and distinguishes the device with excellent energy resolution.
  • a high-resistivity ZnO single crystal was prepared in the same manner as in Example 1.
  • a double-layered metal electrode of 5 nm of titanium and 10 nm of gold was deposited on the surface of one side of the high-resistivity ZnO wafer by a hot/electron beam evaporation method in the order shown in FIG.
  • a thicker (1 m to 500 m) metal indium electrode is then plated on the other side of the ZnO wafer.
  • Both sides of the electrode form a good electrical contact.
  • the wafer is bonded to the circuit board by means of a heated device using molten indium.
  • the wafer is connected to the circuit board through a gold wire.
  • the resulting high resistance ZnO-based detector device is placed in a vacuum to reduce the energy loss of the alpha particles during flight.
  • the detector response test uses a 243 Am- 244 Cm dual-energy radiation alpha source to illuminate the detector. It is counted by the front-end amplifier, and the signal is then transmitted to the main amplifier and transmitted to the multi-channel analyzer, and finally the signal is collected by the microcomputer.
  • the high resistivity single crystal ZnO detector has obvious practical ability in the field of radiation detection, especially its effective response to the dual alpha source and distinguishes the device with excellent energy resolution.
  • a high-resistivity ZnO single crystal was prepared in the same manner as in Example 1.
  • a two-layer metal electrode of 6 nm nickel and 50 nm gold was deposited on the surface of the high resistivity ZnO wafer by a hot/electron beam evaporation method in the order shown in FIG. 2, wherein the purity of the metal used was 999 ⁇ . 9999.
  • a thicker (1m to 500m) metal indium electrode is then plated on the other side of the ZnO wafer.
  • Both sides of the electrode form a good electrical contact.
  • the wafer is bonded to the circuit board by means of a heated device using molten indium.
  • the wafer is connected to the circuit board through a gold wire.
  • the resulting high resistance ZnO-based detector device is placed in a vacuum to reduce the energy loss of the alpha particles during flight.
  • the detector response test uses a 243 Am- 244 Cm dual-energy radiation alpha source to illuminate the detector. It is counted by the front-end amplifier, and the signal is then transmitted to the main amplifier and transmitted to the multi-channel analyzer, and finally the signal is collected by the microcomputer.
  • the high resistivity single crystal ZnO detector has obvious practical ability in the field of radiation detection, especially its effective response to the dual alpha source and distinguishes the device with excellent energy resolution.
  • a high-resistivity ZnO single crystal was prepared in the same manner as in Example 1.
  • a two-layer metal electrode of 50 nm titanium and 50 nm gold vapor-deposited on the surface of one side of the high-resistivity ZnO wafer was subjected to a hot/electron beam evaporation method in the order shown in FIG.
  • a thicker (1 m to 500 m) metal indium electrode is then plated on the other side of the ZnO wafer.
  • Both sides of the electrode form a good electrical contact.
  • the wafer is bonded to the circuit board by means of a heated device using molten indium.
  • the wafer is connected to the circuit board through a gold wire.
  • the resulting high resistance ZnO-based detector device is placed in a vacuum to reduce the energy loss of the alpha particles during flight.
  • the detector response test uses a 243 Am- 244 Cm dual-energy radiation alpha source to illuminate the detector. It is counted by the front-end amplifier, and the signal is then transmitted to the main amplifier and transmitted to the multi-channel analyzer, and finally the signal is collected by the microcomputer.
  • a high-resistivity ZnO single crystal was prepared in the same manner as in Example 1.
  • a metal layer was vapor-deposited on both side surfaces of the high-resistivity ZnO wafer by a thermal/electron beam evaporation method.
  • the metal layers deposited on both sides are symmetrical, that is, the inner metal layer is 35 nm of titanium and the outer metal layer is 20 nm of gold on both sides.
  • a thicker metal indium electrode is then plated on one side of the ZnO wafer.
  • Both sides of the electrode form a good electrical contact.
  • the wafer is bonded to the circuit board by means of a heated device using molten indium.
  • the wafer is connected to the circuit board through a gold wire.
  • the resulting high resistance ZnO-based detector device is placed in a vacuum to reduce the energy loss of the alpha particles during flight.
  • the detector response test uses a 243 Am- 244 Cm dual-energy radiation alpha source to illuminate the detector. It is counted by the front-end amplifier, and the signal is then transmitted to the main amplifier and transmitted to the multi-channel analyzer, and finally the signal is collected by the microcomputer, as shown in FIG.
  • the high resistivity single crystal ZnO detector has obvious practical ability in the field of radiation detection, especially its effective response to the dual alpha source and distinguishes the device with excellent energy resolution.

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Abstract

提供一种高电阻率单晶ZnO基辐射探测器件及其制备方法和应用。所述制备方法包括如下步骤：S1.制备高电阻率单晶ZnO晶片；S2.在高电阻率单晶ZnO晶片的双侧蒸镀金属电极层；S3.将步骤S2处理后的晶片结合到电路板上，并通过金线将晶片与电路板相连接。同时采用α源对器件性能进行测试，器件表现出了良好的辐射响应。上述方法采用具有更强抗辐照能力、更宽带隙、更高的击穿电场强度等优异特性的高阻ZnO材料进行辐射探测器件的制造，所得器件结构简单、制造工艺简单、成本低，可重复性高，质量好，其具有强的抗辐射能力，具有较高的实用性，推广应用前景好。

Description

一种高电阻率单晶ZnO基辐射探测器件及其制备方法和应用 技术领域
本发明属于辐射探测器技术领域。更具体地，涉及一种高电阻率单晶ZnO基辐射探测器件及其制备方法和应用。
背景技术
在众多军事、国防、航天等领域，探测器需要同时具备高的灵敏度、小型化、抗辐照能力强等特性。与传统气体辐射探测器通过气体离化产生探测信号所需要的平均辐射能量(～30eV)相比，半导体材料产生一对电子空穴对所需的平均辐射能量<10eV，因此在同样的辐射能量下，特别是对于弱信号，半导体材料的灵敏度比气体要高；同时，由于半导体材料较之气体密度大，很薄的一层半导体材料(几微米)就可以有效地转换吸收的辐射能量，在器件小型化方面具有天然优势；另外半导体材料本身的机械强度可以很好地自支撑，方便集成化构建探测器阵列，从而实现探测目标位置信息的获得。
由于材料上的优势以及配套成熟发展的微电子加工技术，以IV族硅、锗为代表的元素半导体基X射线探测器件发展最早。与硅相比，锗的优势在于其相对大的原子数与低的电子空穴对产生能，这使得锗基探测器具有较高的效率和能量分辨率。
但是，无论硅还是锗都因其较窄的带隙而对环境温度敏感、抗辐射能力弱，因而将其装备到太空环境下工作的系统中受到较大的限制。另一方面，对于化合物半导体，如III-V族化合物GaAs、InGaAs、GaN，II-VI族化合物CdTe(能量分辨率0.3％@662keV伽玛射线，需要Peltire制冷)、CdZnTe，VII-B族二元卤族化合物HgI2、PbI2、TlBr以及它们的三元化合物HgCdTe等，这些材料大多数都存在熔点低、易分解、抗辐照能力弱的缺点，基于其所搭建器件性能的稳定性及可靠性难以保证，这些问题大大限制了相关探测器件在核电站、太空等苛刻环境中的应用。
发明内容
本发明要解决的技术问题是克服上述现有技术的缺陷和不足，提供一种基于高电阻率单晶氧化锌材料进行α粒子探测的半导体器件，制备方法包括以下步 骤：高阻单晶ZnO晶片在电子束或热蒸镀方法下进行双侧金属电极的制备，然后将晶片制作到电路板上方便测试，同时采用α源对器件性能进行测试，器件表现出了良好的辐射响应。本发明采用具有更强抗辐照能力、更宽带隙、更高的击穿电场强度等优异特性的高阻ZnO材料进行辐射探测器件的制造。所得器件结构简单、成本低，可重复性高。
本发明的目的是提供一种高电阻率单晶ZnO基辐射探测器件。
本发明另一目的是所述高电阻率单晶ZnO基辐射探测器件的制备方法。
本发明的另一目的是提供所述高电阻率单晶ZnO基辐射探测器件的应用。
本发明上述目的通过以下技术方案实现：
一种高电阻率单晶ZnO基辐射探测器件的制备方法，包括如下步骤：
S1.制备高电阻率单晶ZnO晶片；
S2.在高电阻率单晶ZnO晶片的双侧蒸镀金属电极层；
S3.将步骤S2处理后的晶片结合到电路板上，并通过金线将晶片与电路板相连接。
其中，优选地，步骤S2所述蒸镀的方法为热蒸镀或电子束蒸镀方法。
优选地，步骤S2所述在高电阻率单晶ZnO晶片的双侧蒸镀金属电极层具体是：在高电阻率单晶ZnO晶片的一侧蒸镀内金属层和外金属层，所述内金属层为镍层或钛层，所述外金属层为金层。在高电阻率单晶ZnO晶片的另一侧蒸镀铟层，或者采用同样的镍层、钛层或铝层并结合金层或银层的电极结，即在高电阻率单晶ZnO晶片的另一侧同样蒸镀内金属层和外金属层，所述内金属层为镍层、钛层或铝层，所述外金属层为金层或银层。更进一步地，然后再在一面上蒸镀铟层。
优选地，所述镍层的厚度为4～6nm。
更优选地，所述镍层的厚度为5nm。
优选地，所述钛层的厚度为5～50nm。
更优选地，所述钛层的厚度为35nm。
优选地，所述金层的厚度为10～50nm。
更优选地，所述金层的厚度为20nm。
优选地，步骤S2所述金属的纯度为999～9999。
优选地，所述铟层的厚度为1m～500m。
优选地，步骤S3所述晶片结合到电路板上的具体方法是：通过加热使一侧的金属层熔融，利用熔融的金属将晶片结合到电路板上。
具体优选地，步骤S3所述晶片结合到电路板上的具体方法是：是通过加热使一侧的铟层熔融，利用熔融的铟将晶片结合到电路板上。
另外，优选地，步骤S1所述高电阻率单晶ZnO晶片的制备方法如下：将单晶ZnO晶片置于金属锂电化学装置中，恒流放电处理后，放于800～1000℃、10～30atm的氧气气氛中退火处理20～28小时，即可得到高电阻率ZnO单晶片。
该制备高电阻率单晶ZnO晶片的方法中，首先利用锂与ZnO天然化学位能的差异，采取可控的放电过程，实现锂在ZnO中的高效注入。
优选地，所述的单晶ZnO晶片为低阻高质量单晶ZnO晶片。
优选地，所述金属锂电化学装置内的电解液为0.5～1.5M LiPF6溶液分散于体积比为2～5：2～4：2～4的碳酸亚乙酯、碳酸甲乙酯和碳酸二乙酯混合溶液，采用Celgard 2400聚乙烯多微孔膜做为电子隔膜。
更优选地，所述金属锂电化学装置内的电解液为1M LiPF6溶液分散于体积比为4：3：3的碳酸亚乙酯、碳酸甲乙酯和碳酸二乙酯混合溶液。
作为一种优选的可实施方案，所述金属锂电化学装置为锂电池壳。使用时，将ZnO晶片放于商用的锂电池结构中恒流放电处理。
优选地，所述将单晶ZnO晶片置于金属锂电化学装置中的方法具体是按照如下顺序将单晶ZnO晶片装配到锂电池壳中：正级壳、单晶ZnO晶片、聚乙烯多微孔膜、金属锂片、闪电极、弹簧电极、负极壳，外圈是绝缘套层。
另外，优选地，所述恒流放电处理是2～4uA恒流放电处理10～25小时。
优选地，所述恒流放电处理是3uA恒流放电处理15小时。
另外，优选地，所述的单晶ZnO晶片的大小为10厘米见方。
优选地，所述的单晶ZnO晶片的厚度为0.2～0.5毫米。
更优选地，是当单晶ZnO晶片的厚度为0.2毫米时，3uA恒流放电处理10小时；当单晶ZnO晶片的厚度为0.3毫米时，3uA恒流放电处理15小时；单晶ZnO晶片的厚度为0.5毫米时，3uA恒流放电处理25小时。
优选地，恒流放电处理后的ZnO单晶放于800～900℃、15～25atm的氧气气氛炉中退火处理22～26小时。
更优选地，恒流放电处理后的ZnO单晶放于800℃、20atm的高压氧气气氛 炉中退火处理24小时。
另外，由上述方法制备得到的高电阻率单晶ZnO基辐射探测器件，以及所述高电阻率单晶ZnO基辐射探测器件在制备辐射探测器方面的应用，也都在本发明的保护范围之内。
本发明制备高电阻率单晶ZnO基辐射探测器件的研究包括以下几个关键点：
(1)高质量高电阻率单晶ZnO晶片做为辐射探测器件的核心功能组件。
(2)采用热蒸镀及电子束蒸镀方法在ZnO单晶片上进行电极的制备。
(3)采用α源对器件进行辐射，从而测试器件对辐射的响应。
本发明具有以下有益效果：
本发明提供了一种高电阻率单晶ZnO基辐射探测器的制造方法，并验证了其对低束流单能或双能α源的响应，表现出了良好的辐射响应。
本发明采用具有更强抗辐照能力、更宽带隙、更高的击穿电场强度等优异特性的高阻ZnO材料进行辐射探测器件的制造，所得器件结构简单、制造工艺简单，成本低，可重复性高，具有较高的实用性，具有很好的推广应用前景。
而且，本发明采用高质量高电阻率的ZnO单晶为功能材料，其具有强的抗辐射能力，决定了器件可以在核科学技术领域以及太空等较强辐射条件下的工作。
本发明采用较成熟的热蒸镀或电子束蒸镀的办法，其具有成膜厚度均匀可控的特点，保证了高质量的电极质量，而且可以实现大部分金属的电极蒸镀，为电极选择控制器件性能提供了广阔的制造空间。
本发明采用束流量较低的单能α源做为辐射源，可以较好地反应出器件对探测信号的灵敏度，可以较好地反应出器件对探测信号能量上的区分度。
附图说明
图1为制备高电阻率单晶ZnO时低阻氧化锌晶格置于金属锂电池壳的电化学池配置顺序图。
图2是实施例1的高电阻率ZnO器件的装配结构图。
图3是实施例1的α粒子测试响应数据。
图4是实施例2的高电阻率ZnO器件的装配结构图。
图5是实施例2的α粒子测试响应数据。
具体实施方式
以下结合说明书附图和具体实施例来进一步说明本发明，但实施例并不对本发明做任何形式的限定。除非特别说明，本发明采用的试剂、方法和设备为本技术领域常规试剂、方法和设备。
除非特别说明，本发明所用试剂和材料均为市购。
实施例1
1、制备高电阻率ZnO单晶
(1)室温下在氩气填充的手套箱中，将10厘米见方的高质量低阻氧化锌晶片按图1所示顺序装配到商用CR 2032电池壳中，其中所用到的电解液为1M LiPF6溶液分散于体积比为4：3：3的碳酸亚乙酯、碳酸甲乙酯和碳酸二乙酯混合溶液中，采用Celgard 2400聚乙烯多微孔膜做为电子隔膜。
通过LAND BT2013A多通道电池测试系统在室温下进行恒流放电处理，实现锂在ZnO单晶中的注入。
本实施例所用高质量低阻氧化锌晶片的厚度0.3毫米，恒流放电电流设定为3微安，放电时间设定为15小时。
(2)将上述步骤(1)处理过的进锂氧化锌晶片放置于高温高压退火炉中，进行晶格中锂的去除，得到高电阻率ZnO单晶片。
本实施例所用的锂去除装置，其可承受高温高压氧气气氛，按实验需求，氧压设为20标准大气压，温度设为800摄氏度，退火时间设为24小时。
上述制备得到的高电阻率ZnO单晶片的电阻率为1011Ωcm，比处理之前提高了1011。
2、制备高电阻率单晶ZnO基辐射探测器件
采用热/电子束蒸镀方法，按照如图2所示的顺序，在高电阻率ZnO晶片一侧表面上蒸镀5nm镍、20nm金的双层金属电极，其中所用到的金属纯度为999～9999。
随后在ZnO晶片另一面上镀较厚(1m～500m)的金属铟电极。
双侧电极均为形成良好的电接触。
通过加热器件利用熔融的铟将晶片结合到电路板上。并通过金线将晶片与电路板相连接。
3、测试
将得到的高电阻率单晶ZnO基辐射探测器件置于真空中，从而减少α粒子 在飞行过程中的能量损失。探测器件响应测试采用从241Am辐射源发出的5.486MeV的α射线照射探测器。由前段放大器进行计数，信号接着传送到主放大器并传送给多道分析器，最终通过微机采集信号，如图3所示。
以上结果表明了，基于高电阻率单晶ZnO探测器件在辐射探测领域具有明显的实用能力，特别其对于弱α源的有效响应更是体现了器件的灵敏性。
实施例2
1、制备高电阻率ZnO单晶，方法同实施例1。
2、制备高电阻率单晶ZnO基辐射探测器件
采用热/电子束蒸镀方法，按照如图4所示的顺序，在高电阻率ZnO晶片一侧表面上蒸镀的35nm钛、20nm金的双层金属电极。
随后在ZnO晶片另一面上镀较厚的金属铟电极。
双侧电极均为形成良好的电接触。
通过加热器件利用熔融的铟将晶片结合到电路板上。并通过金线将晶片与电路板相连接。
3、测试
将得到的高阻ZnO基探测器件置于真空中，从而减少α粒子在飞行过程中的能量损失。探测器响应测试采用从243Am-244Cm双能辐射α射线源照射探测器。由前段放大器进行计数，信号接着传送到主放大器并传送给多道分析器，最终通过微机采集信号，如图5所示。
以上结果表明了，基于高电阻率单晶ZnO探测器件在辐射探测领域具有明显的实用能力，特别其对于双α源的有效响应并区分体现了器件具有优良的能量分辨能力。
实施例3
1、制备高电阻率ZnO单晶，方法同实施例1。
2、制备高电阻率单晶ZnO基辐射探测器件
采用热/电子束蒸镀方法，按照如图2所示的顺序，在高电阻率ZnO晶片一侧表面上蒸镀4nm镍、10nm金的双层金属电极，其中所用到的金属纯度为999～9999。
随后在ZnO晶片另一面上镀较厚(1m～500m)的金属铟电极。
双侧电极均为形成良好的电接触。
通过加热器件利用熔融的铟将晶片结合到电路板上。并通过金线将晶片与电路板相连接。
3、测试
将得到的高阻ZnO基探测器件置于真空中，从而减少α粒子在飞行过程中的能量损失。探测器响应测试采用从243Am-244Cm双能辐射α射线源照射探测器。由前段放大器进行计数，信号接着传送到主放大器并传送给多道分析器，最终通过微机采集信号。
结果表明，基于高电阻率单晶ZnO探测器件在辐射探测领域具有明显的实用能力，特别其对于双α源的有效响应并区分体现了器件具有优良的能量分辨能力。
实施例4
1、制备高电阻率ZnO单晶，方法同实施例1。
2、制备高电阻率单晶ZnO基辐射探测器件
采用热/电子束蒸镀方法，按照如图4所示的顺序，在高电阻率ZnO晶片一侧表面上蒸镀的5nm钛、10nm金的双层金属电极。
随后在ZnO晶片另一面上镀较厚的(1m～500m)金属铟电极。
双侧电极均为形成良好的电接触。
通过加热器件利用熔融的铟将晶片结合到电路板上。并通过金线将晶片与电路板相连接。
3、测试
将得到的高阻ZnO基探测器件置于真空中，从而减少α粒子在飞行过程中的能量损失。探测器响应测试采用从243Am-244Cm双能辐射α射线源照射探测器。由前段放大器进行计数，信号接着传送到主放大器并传送给多道分析器，最终通过微机采集信号。
结果表明，基于高电阻率单晶ZnO探测器件在辐射探测领域具有明显的实用能力，特别其对于双α源的有效响应并区分体现了器件具有优良的能量分辨能力。
实施例5
1、制备高电阻率ZnO单晶，方法同实施例1。
2、制备高电阻率单晶ZnO基辐射探测器件
采用热/电子束蒸镀方法，按照如图2所示的顺序，在高电阻率ZnO晶片一侧表面上蒸镀6nm镍、50nm金的双层金属电极，其中所用到的金属纯度为999～9999。
随后在ZnO晶片另一面上镀较厚(1m～500m)的金属铟电极。
双侧电极均为形成良好的电接触。
通过加热器件利用熔融的铟将晶片结合到电路板上。并通过金线将晶片与电路板相连接。
3、测试
将得到的高阻ZnO基探测器件置于真空中，从而减少α粒子在飞行过程中的能量损失。探测器响应测试采用从243Am-244Cm双能辐射α射线源照射探测器。由前段放大器进行计数，信号接着传送到主放大器并传送给多道分析器，最终通过微机采集信号。
结果表明，基于高电阻率单晶ZnO探测器件在辐射探测领域具有明显的实用能力，特别其对于双α源的有效响应并区分体现了器件具有优良的能量分辨能力。
实施例6
1、制备高电阻率ZnO单晶，方法同实施例1。
2、制备高电阻率单晶ZnO基辐射探测器件
采用热/电子束蒸镀方法，按照如图4所示的顺序，在高电阻率ZnO晶片一侧表面上蒸镀的50nm钛、50nm金的双层金属电极。
随后在ZnO晶片另一面上镀较厚的(1m～500m)金属铟电极。
双侧电极均为形成良好的电接触。
通过加热器件利用熔融的铟将晶片结合到电路板上。并通过金线将晶片与电路板相连接。
3、测试
将得到的高阻ZnO基探测器件置于真空中，从而减少α粒子在飞行过程中的能量损失。探测器响应测试采用从243Am-244Cm双能辐射α射线源照射探测器。由前段放大器进行计数，信号接着传送到主放大器并传送给多道分析器，最终通过微机采集信号。
结果表明，基于高电阻率单晶ZnO探测器件在辐射探测领域具有明显的实 用能力，特别其对于双α源的有效响应并区分体现了器件具有优良的能量分辨能力。
实施例7
1、制备高电阻率ZnO单晶，方法同实施例1。
2、制备高电阻率单晶ZnO基辐射探测器件
采用热/电子束蒸镀方法，在高电阻率ZnO晶片的两侧表面上蒸镀金属层。
与实施例2不同的是：两面蒸镀的金属层对称，即两面均蒸镀内金属层35nm钛和外金属层20nm金。
随后在ZnO晶片一面上镀较厚的金属铟电极。
双侧电极均为形成良好的电接触。
通过加热器件利用熔融的铟将晶片结合到电路板上。并通过金线将晶片与电路板相连接。
3、测试
将得到的高阻ZnO基探测器件置于真空中，从而减少α粒子在飞行过程中的能量损失。探测器响应测试采用从243Am-244Cm双能辐射α射线源照射探测器。由前段放大器进行计数，信号接着传送到主放大器并传送给多道分析器，最终通过微机采集信号，如图5所示。
结果表明了，基于高电阻率单晶ZnO探测器件在辐射探测领域具有明显的实用能力，特别其对于双α源的有效响应并区分体现了器件具有优良的能量分辨能力。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受所述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

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  1. 一种高电阻率单晶ZnO基辐射探测器件的制备方法，其特征在于，包括如下步骤：
    S1.制备高电阻率单晶ZnO晶片；
    S2.在高电阻率单晶ZnO晶片的双侧蒸镀金属电极层；
    S3.将S2处理后的晶片结合到电路板上，并通过金线将晶片与电路板相连接。
  2. 根据权利要求1所述制备方法，其特征在于，步骤S2所述蒸镀的方法为热蒸镀或电子束蒸镀方法。
  3. 根据权利要求1所述制备方法，其特征在于，步骤S2所述在高电阻率单晶ZnO晶片的双侧蒸镀金属电极层具体是：在高电阻率单晶ZnO晶片的一侧蒸镀内金属层和外金属层，所述内金属层为镍层、钛层或铝层，所述外金属层为金层或银层；在高电阻率单晶ZnO晶片的另一侧蒸镀铟层，或者在高电阻率单晶ZnO晶片的另一侧同样蒸镀内金属层和外金属层，所述内金属层为镍层、钛层或铝层，所述外金属层为金层或银层。
  4. 根据权利要求1所述制备方法，其特征在于，步骤S2所述金属的纯度为999～9999。
  5. 根据权利要求3所述制备方法，其特征在于，所述镍层的厚度为4～6nm，所述钛层的厚度为5～50nm，所述金层的厚度为10～50nm。
  6. 根据权利要求3所述制备方法，其特征在于，所述铟层厚度为1～500m。
  7. 根据权利要求1所述制备方法，其特征在于，步骤S3所述晶片结合到电路板上的具体方法是：通过加热使一侧的金属层熔融，利用熔融的金属将晶片结合到电路板上。
  8. 根据权利要求1所述制备方法，其特征在于，步骤S1所述高电阻率单晶ZnO晶片的制备方法如下：将单晶ZnO晶片置于金属锂电化学装置中，恒流放电处理后，放于800～1000℃、10～30atm的氧气气氛中退火处理20～28小时，即可得到高电阻率ZnO单晶片。
  9. 根据权利要求1～8任一所述方法得到的高电阻率单晶ZnO基辐射探测器件。
  10. 权利要求9所述的高电阻率单晶ZnO基辐射探测器件在制备辐射探测器方面的应用。
PCT/CN2016/095817 2016-07-29 2016-08-18 一种高电阻率单晶ZnO基辐射探测器件及其制备方法和应用 Ceased WO2018018677A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110310966A (zh) * 2019-06-20 2019-10-08 中国电子科技集团公司第十一研究所 一种碲镉汞芯片及其加工方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107994118B (zh) * 2017-11-13 2019-10-01 华中科技大学鄂州工业技术研究院 钙钛矿太阳能电池、双层金属电极及其制备方法
CN114883442B (zh) * 2022-05-12 2023-05-12 东华理工大学 一种CsPbBr3核辐射探测器及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140042875A1 (en) * 2012-08-07 2014-02-13 Hitachi Metals, Ltd. Piezoelectric element, piezoelectric device and method of manufacturing piezoelectric element
CN103794674A (zh) * 2014-01-13 2014-05-14 西安交通大学 基于高阻ZnO单晶的光电导型X射线探测器及其制备方法
CN105742393A (zh) * 2016-04-28 2016-07-06 西安交通大学 基于高阻ZnO薄膜的光电导型X射线探测器及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE0402074D0 (sv) * 2004-08-23 2004-08-23 Nilsson Material Ab Detektor för joniserande strålning
DE202009006620U1 (de) * 2009-05-07 2009-08-06 Tyntek Corporation Lichtsensor
CN103046133A (zh) * 2011-10-17 2013-04-17 中国科学院福建物质结构研究所 一种提高氧化锌单晶电阻率的退火方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140042875A1 (en) * 2012-08-07 2014-02-13 Hitachi Metals, Ltd. Piezoelectric element, piezoelectric device and method of manufacturing piezoelectric element
CN103794674A (zh) * 2014-01-13 2014-05-14 西安交通大学 基于高阻ZnO单晶的光电导型X射线探测器及其制备方法
CN105742393A (zh) * 2016-04-28 2016-07-06 西安交通大学 基于高阻ZnO薄膜的光电导型X射线探测器及其制备方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110310966A (zh) * 2019-06-20 2019-10-08 中国电子科技集团公司第十一研究所 一种碲镉汞芯片及其加工方法

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