WO2018014780A1

WO2018014780A1 - Dielectric resonator oscillator

Info

Publication number: WO2018014780A1
Application number: PCT/CN2017/092829
Authority: WO
Inventors: 陈家诚; 姚建可; 丁庆
Original assignee: 深圳市华讯星通讯有限公司; 深圳市华讯方舟卫星通信有限公司
Priority date: 2016-07-20
Filing date: 2017-07-13
Publication date: 2018-01-25
Also published as: CN106059499A; CN106059499B

Abstract

A dielectric resonator oscillator, comprising a housing (100), a dielectric resonator (200) and a microstrip line (300), wherein the dielectric resonator (200) and the microstrip line (300) are mounted inside the housing (100), and the dielectric resonator (200) is located at one side of the microstrip line (300) and is electromagnetically coupled to the microstrip line (300). The dielectric resonator oscillator further comprises a first circuit board (400) and a support structure (500), wherein the microstrip line (300) is arranged on the first circuit board (400); the support structure (500) is connected between the first circuit board (400) and the housing (100), and the support structure (500) and the dielectric resonator (200) are mounted at the same side in the housing (100); and the first circuit board (400), the support structure (500) and the housing (100) together constitute a cavity (800), and inner and outer spaces of the cavity (800) are in communication with each other. Therefore, electromagnetic waves below the microstrip line (300) can be coupled to the dielectric resonator (200) via the cavity (800), thereby decreasing the amount of electromagnetic waves absorbed by the housing (100), reducing the loss of electromagnetic wave energy and improving a Q value of the dielectric resonator oscillator.

Description

Dielectric resonant oscillator

[Technical Field]

The present invention relates to the field of microwave circuit technology, and in particular to a dielectric resonator oscillator.

【Background technique】

In the VSAT satellite communication system, the small satellite stations (VSATs) can be widely distributed in different areas, in addition to urban areas, and can also be distributed in mountainous areas. At the same time, the VSAT satellite communication system can meet the different communication needs of Internet services, voice/fax services, and data services, and thus has been widely used.

As shown in Figure 1, the VSAT satellite communication system typically includes a primary station 12, a satellite transponder 13 and satellite stations 11 distributed throughout the area. The satellite transponders 13 are typically distributed in geosynchronous orbits of 36,000 kilometers above the equator. The primary station 12 is the central communication and monitoring terminal in the entire VSAT satellite communication system and typically requires 24/7 operation. The primary station 12 controls and communicates with the satellite stations 11 by directly transmitting signals to satellite stations 11 distributed in different areas. As shown in FIG. 2, the satellite station 11 includes an outdoor unit 15 and an indoor unit 14. The indoor unit 14 includes devices for interaction, such as a modem, a computer device, and the indoor unit 14 is connected to the outdoor unit 15 by wire. The outdoor unit 15 includes an antenna assembly 17, a transceiver 16, and other accessories. The antenna assembly 17 includes a reflector, a feed, a mounting base, and the like. The transceiver 16 includes an upconversion module (BUC, block) Up converter), down converter module (LNB, low noise block) and other transceiver components.

In the VSAT satellite communication system, the transceiver is the communication core of the satellite station, and the signal receiving module is one of the key components of the transceiver. 3 is a schematic diagram of a link of a signal receiving module. The received signal is first transmitted to the microstrip line 201 of the PCB through the waveguide-microstrip line structure, and passes through the low noise amplifier module 202 and the filter module 203 to obtain a desired high frequency signal. At the same time, the local oscillator signal generator 205 generates a local oscillator signal, and the high frequency signal is mixed with the mixer 204, downconverted to the intermediate frequency band, amplified by the intermediate frequency amplifier 206, and output to the subsequent stage circuit.

In the signal receiving module, the performance of the local oscillator has an important influence on the performance of the signal reception. Normally, a local oscillator signal generating chip or dielectric resonant oscillator of a specific frequency is selected ( Dielectric Resonator Oscillator, DRO) to generate the local oscillator source. Among them, the local oscillator signal generation chip is simple, but the price is relatively expensive, and an external reference clock frequency is required. The dielectric resonant oscillator is widely used in signal receiving modules due to its unique advantages such as small size, high Q value, simple structure and low cost.

However, to apply a dielectric resonator oscillator to a signal receiving module, it is required to meet the requirements of low loss and small phase noise. Since the Q value (quality factor) of the dielectric resonator oscillator is inversely proportional to the loss, and the low Q value increases the phase noise of the system, to reduce the loss and noise, the Q value of the dielectric resonator oscillator needs to be increased. Therefore, how to improve the Q value of the dielectric resonator oscillator is an urgent problem to be solved.

[Summary of the Invention]

Based on this, it is necessary to provide a dielectric resonator oscillator for how to improve the Q value of the dielectric resonator oscillator.

A dielectric resonator oscillator includes a housing, a dielectric resonator, and a microstrip line; the dielectric resonator and the microstrip line are mounted in the housing; the dielectric resonator is located on one side of the microstrip line and The microstrip line is electromagnetically coupled; the dielectric resonant oscillator further includes a first circuit board and a support structure; the microstrip line is disposed on the first circuit board; and the support structure is coupled to the first circuit Between the board and the housing, and the support structure and the dielectric resonator are mounted on the same side of the housing; the first circuit board, the support structure and the housing together form a cavity, and the The inner and outer spaces of the cavity are connected.

In one of the embodiments, the material of the support structure is composed of non-polar molecules.

In one embodiment, the height of the support structure in a direction perpendicular to the first circuit board is between 1/8 and 1/2 of the length of the first circuit board; wherein The line corresponding to the length of the first circuit board is parallel to the line of the width of the microstrip line.

In one embodiment, the support structure includes a first support unit and a second support unit; the first support unit and the second support unit are respectively located below opposite ends of the first circuit board; wherein A perpendicular line between opposite ends of the first circuit board is parallel to a line in which the width of the microstrip line is wide.

In one embodiment, the distance between the first support unit and the second support unit is greater than the width of the microstrip line.

In one embodiment, the dielectric resonator oscillator further includes a pad layer; the pad layer is coupled between the dielectric resonator and the housing.

In one of the embodiments, the underlayer has a lower dielectric constant than the dielectric resonator.

In one of the embodiments, the housing is a metal housing.

In one embodiment, the dielectric resonator oscillator further includes a second circuit board; the second circuit board is mounted in the housing; the support structure and the dielectric resonator are both located on the second circuit board .

The dielectric resonator oscillator has the beneficial effects that in the dielectric resonator oscillator, the microstrip line is disposed on the first circuit board, the support structure is connected between the first circuit board and the housing, and the support structure and the medium resonate The device is mounted on the same side of the housing. At the same time, the first circuit board, the support structure and the housing together form a cavity, and the inner and outer spaces of the cavity are in communication. Therefore, the electromagnetic wave under the microstrip line can be coupled to the dielectric resonator through the cavity, thereby reducing the electromagnetic wave absorbed by the housing, reducing the loss of electromagnetic wave energy, and improving the Q value of the dielectric resonant oscillator.

[Description of the Drawings]

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and those skilled in the art can obtain drawings of other embodiments according to the drawings without any creative work.

Figure 1 is a schematic diagram showing the structure of a VSAT satellite communication system;

2 is a schematic diagram showing the structure of a satellite station in the VSAT satellite communication system shown in FIG. 1;

3 is a schematic structural diagram of a signal receiving module in the satellite station shown in FIG. 2;

4 is a schematic cross-sectional view of a dielectric resonator oscillator according to an embodiment;

Fig. 5 is another schematic cross-sectional view showing the dielectric resonator oscillator of the embodiment shown in Fig. 4.

【detailed description】

In order to facilitate the understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. Preferred embodiments of the invention are shown in the drawings. However, the invention may be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the understanding of the present disclosure will be more fully understood.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning meaning meaning The terminology used herein is for the purpose of describing the particular embodiments, The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

An embodiment provides a dielectric resonator oscillator that can be applied to a Ka band or other microwave band. As shown in FIG. 4, the dielectric resonator oscillator includes a housing 100, a dielectric resonator 200, a microstrip line 300, a first circuit board 400, and a support structure 500. The dielectric resonator 200, the microstrip line 300, the first circuit board 400, and the support structure 500 are all mounted in the housing 100.

The dielectric resonator 300 is a non-metallic electromagnetic resonator having a high dielectric constant, which may be 20 to 100, and has a low electromagnetic dielectric loss. At the same time, the dielectric resonator 300 is located on one side of the microstrip line 300 and electromagnetically coupled to the microstrip line 300. The dielectric resonator 200 and the microstrip line 300 operate by magnetic coupling and can be applied to the oscillating circuit as a frequency selective network. The dielectric resonator 300 can be coupled to a single microstrip line 300, also referred to as a band-stop coupling, which can be applied to a series feedback type DRO. In other embodiments, the dielectric resonator can also be coupled to two microstrip lines, that is, two microstrip lines are symmetrically disposed on both sides of the dielectric resonator, and the dielectric resonator simultaneously couples with the two microstrip lines. Also known as a belt-type coupling, the coupling structure can be applied to a parallel feedback type DRO.

The microstrip line 300 is disposed on the first circuit board 400. The microstrip line 300 is formed on the first circuit board 400 by a copper clad process, and the thickness d is between 17 μm and 34 μm. The impedance of the microstrip line 300 is 50 ohms. At the same time, a metal such as silver may be deposited on the microstrip line 300 to prevent oxidation of the copper, thereby improving the reliability of the microstrip line 300. In addition, the first circuit board 400 is a high frequency board. It should be noted that only the width and height of the microstrip line 300 are shown in FIG. 4, and the length of the microstrip line 300 is not shown.

The support structure 500 is connected between the first circuit board 400 and the housing 100, and the support structure 500 and the dielectric resonator 200 are mounted on the same side in the housing 100. Specifically, the support structure 500 is perpendicular to the first circuit board 400. At the same time, the first circuit board 400, the support structure 500 and the housing 100 together form a cavity 800, and the inner and outer spaces of the cavity 800 communicate with each other. Therefore, the cavity 800 is not only a hollow structure but also has at least one opening so that the inner and outer spaces of the cavity 800 communicate with each other, so that the loss of electromagnetic waves through the cavity 800 is greatly reduced.

Therefore, in the above dielectric resonator oscillator provided in this embodiment, since the microstrip line 300 is formed on the first circuit board 400, the cavity 800 is below the microstrip line 300, so the electromagnetic wave below the microstrip line 300 The cavity 800 can be coupled to the dielectric resonator 200 to reduce the electromagnetic wave absorbed by the housing 100, thereby reducing the loss of electromagnetic wave energy, increasing the Q value of the dielectric resonator oscillator, and reducing the noise of the dielectric resonator oscillator. , thereby improving the performance of the dielectric resonator oscillator.

Specifically, the material of the support structure 500 is composed of non-polar molecules. Materials composed of non-polar molecules do not absorb or absorb electromagnetic waves substantially. Such materials include polytetrafluoroethylene, polypropylene, polyethylene, polysulfone, etc., plastic products, glass, ceramics, etc., which can transmit electromagnetic waves. Without absorbing electromagnetic waves, the loss of electromagnetic wave energy is further reduced.

At the same time, the height c of the support structure 500 in the direction perpendicular to the first circuit board 400 is between 1/8 and 1/2 of the length e of the first circuit board 400, for example 1/4. The line corresponding to the length e of the first circuit board 400 is parallel to the line of the width of the microstrip line 300. In addition, the overall height of the support structure 500, the first circuit board 400, and the microstrip line 300 should be such that the height of the surface of the microstrip line 300 is equal to or less than the height of the position of the surface of the dielectric resonator 200, thereby enhancing the medium. The ability of the electromagnetic waves emitted by the resonator 200 to couple with the microstrip line 300.

As shown in FIG. 4, the support structure 500 includes a first support unit 510 and a second support unit 520. The first supporting unit 510 and the second supporting unit 520 are respectively located below opposite ends of the first circuit board 400. The vertical line between the opposite ends of the first circuit board 400 is parallel to the line of the width of the microstrip line 300. Therefore, the first supporting unit 510 and the second supporting unit 520 are parallel to each other and are perpendicular to the first circuit board 400 and the microstrip line 300. In this embodiment, both ends of the cavity 800 are open, and electromagnetic waves generated by the microstrip line 300 and located under the microstrip line 300 can be directly coupled to the dielectric resonator 200 through the two openings, thereby avoiding Loss caused by absorption.

In addition, the distance a between the first support unit 510 and the second support unit 520 is greater than the width b of the microstrip line 300. That is, the first supporting unit 510 and the second supporting unit 520 are respectively located on opposite sides of the projection position of the microstrip line 300 below the first circuit board 400, thereby ensuring that the lower side of the microstrip line 300 passes through the first circuit board 400. It is a cavity 800. Therefore, electromagnetic waves below the microstrip line 300 can be coupled to the dielectric resonator 200 through the cavity 800.

It can be understood that the specific design manner of the support structure 500 is not limited to the above, as long as the loss of electromagnetic wave energy can be reduced. For example, the structure of the support structure 500 can also be changed so that the cavity 800 has only one opening or more than two openings, provided that the Q value satisfies the requirements.

Further, as shown in FIG. 4, the dielectric resonator oscillator further includes a pad layer 600. The pad layer 600 is connected between the dielectric resonator 200 and the housing 100. At the same time, the pad 600 has a lower dielectric constant than the dielectric resonator 200. Therefore, in the present embodiment, by providing the pad layer 600, the loaded quality factor of the dielectric resonator 200 can be improved, thereby improving the phase noise performance of the dielectric resonator oscillator. It can be understood that the dielectric resonator 200 can also improve the loaded quality factor by other means.

In addition, the dielectric resonator 200 has a cylindrical shape. The bottom surface diameter Φ1 of the dielectric resonator 200 may be 5.93 mm, and the high f of the dielectric resonator 200 may be 2.57 mm. Correspondingly, the mat layer 600 is also cylindrical in order to achieve a matching effect with the dielectric resonator 200. The bottom surface diameter Φ2 of the pad layer 600 may be 3.90 mm, and the height g of the pad layer 600 may be 1.37 mm.

Since the cylindrical-shaped dielectric resonator 200 operates in the TE01δ mode, and the electromagnetic wave is most easily coupled with the microstrip line 300 in the TE01δ mode, the coupling performance of the dielectric resonator 200 and the microstrip line 300 is enhanced. It can be understood that the dielectric resonator 200 can also have other shapes according to actual use requirements, such as a rectangle, a ring, a sphere, and the like.

Specifically, the housing 100 is a metal housing, so that the external interference to the dielectric resonant oscillator can be avoided, and the working performance of the dielectric resonant oscillator is improved.

Further, as shown in FIG. 5, the dielectric resonator oscillator further includes a second circuit board 700. The second circuit board 700 is mounted in the housing 100, and the support structure 500 and the dielectric resonator 200 are both located on the second circuit board 700. The second circuit board 700 can be a high frequency board and has a larger area than the first circuit board 400. Other components included in the dielectric resonator oscillator, such as an amplifying circuit, may be mounted on the second circuit board 700. In addition, the material of the pad layer 600 is the same as that of the second circuit board 700, so that the pad layer 600 is the same as the process of the second circuit board 700, and is more convenient to process.

It can be understood that the dielectric resonant oscillator is not limited to the one case including the second circuit board 700. For example, only the first circuit board 400 may be disposed, and other devices in the dielectric resonant oscillator may be installed in the first. On the circuit board 400.

The technical features of the above-described embodiments may be arbitrarily combined. For the sake of brevity of description, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be considered as the scope of this manual.

The above-described embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.

Claims

A dielectric resonator oscillator includes a housing, a dielectric resonator, and a microstrip line; the dielectric resonator and the microstrip line are mounted in the housing; the dielectric resonator is located on one side of the microstrip line and The microstrip line is electromagnetically coupled; the dielectric resonant oscillator further includes a first circuit board and a support structure; the microstrip line is disposed on the first circuit board; and the support structure is connected to the Between the first circuit board and the housing, and the support structure and the dielectric resonator are mounted on the same side of the housing; the first circuit board, the support structure and the housing together form a cavity And the inner and outer spaces of the cavity are in communication.
The dielectric resonator oscillator according to claim 1, wherein the material of the support structure is composed of non-polar molecules.
The dielectric resonator oscillator according to claim 1, wherein a height of said support structure in a direction perpendicular to said first circuit board is between 1/8 and 1 of a length of said first circuit board Between /2; wherein a line corresponding to the length of the first circuit board is parallel to a line of the width of the microstrip line.
The dielectric resonator oscillator according to claim 1, wherein the support structure comprises a first support unit and a second support unit; the first support unit and the second support unit are respectively located on the first circuit board a lower side of the opposite ends; wherein a perpendicular line between opposite ends of the first circuit board is parallel to a line of the width of the microstrip line.
The dielectric resonator oscillator according to claim 4, wherein a distance between the first supporting unit and the second supporting unit is larger than a width of the microstrip line.
The dielectric resonator oscillator according to claim 1, wherein the dielectric resonator oscillator further comprises a pad layer; and the pad layer is connected between the dielectric resonator and the case.
A dielectric resonator oscillator according to claim 6, wherein said underlayer has a lower dielectric constant than said dielectric resonator.
A dielectric resonator oscillator according to any one of claims 1 to 7, wherein the casing is a metal casing.
The dielectric resonator oscillator according to any one of claims 1 to 7, wherein said dielectric resonator oscillator further comprises a second circuit board; said second circuit board being mounted in said housing; Both the support structure and the dielectric resonator are located on the second circuit board.