WO2018004280A1 - Structure de film mince d'oxyde de cuivre utilisant un film mince de cuivre monocristallin sans défaut et son procédé de fabrication - Google Patents

Structure de film mince d'oxyde de cuivre utilisant un film mince de cuivre monocristallin sans défaut et son procédé de fabrication Download PDF

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WO2018004280A1
WO2018004280A1 PCT/KR2017/006918 KR2017006918W WO2018004280A1 WO 2018004280 A1 WO2018004280 A1 WO 2018004280A1 KR 2017006918 W KR2017006918 W KR 2017006918W WO 2018004280 A1 WO2018004280 A1 WO 2018004280A1
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copper oxide
thin film
copper
oxide layer
single crystal
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Korean (ko)
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정세영
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부산대학교 산학협력단
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Definitions

  • the present invention relates to a copper oxide thin film structure and a method for manufacturing the same, and more particularly, to a copper oxide thin film structure using a defect-free single crystal copper thin film having enhanced optical properties, electrical properties, and mechanical stability by using a defect-free single crystal copper thin film. It is about a method.
  • copper oxide thin films are used as thin film transistors (TFTs), photovoltaic cells, photocatalysts, and the like. In particular, it is highly useful as p-channel material.
  • the copper oxide thin film is prepared by manufacturing a copper oxide thin film through magnetization sputtering, pulsed laser deposition (PLD), chemical vapor deposition (CVD), or the like, or heat-treating the copper thin film in an oxidizing atmosphere while forming an oxygen atmosphere. To prepare.
  • a copper oxide ingot may be deposited on a substrate by a pulsed laser deposition (PLD) method to produce a high quality copper oxide thin film.
  • PLD pulsed laser deposition
  • the present invention has been invented to solve the above problems, copper oxide thin film structure using a defect-free single crystal copper thin film to improve the production efficiency of the copper oxide thin film and to improve the optical properties, electrical properties and mechanical stability of the copper oxide thin film and its
  • the purpose is to provide a manufacturing method.
  • the above object is a transparent substrate; A first copper oxide layer formed on the transparent substrate and having a predetermined direction; And a second copper oxide layer formed on an upper portion of the first copper oxide layer to prevent peroxidation of the first copper oxide layer and to protect it from external damage. It is achieved by the used copper oxide thin film structure.
  • the first copper oxide layer is formed of copper oxide (I) (Cu 2 O)
  • the second copper oxide layer is formed of copper (II) oxide (CuO)
  • the first copper oxide layer and the The second copper oxide layer has the same orientation
  • the first copper oxide layer is formed of copper (II) oxide (CuO)
  • the second copper oxide layer is formed of copper oxide (II) (CuO).
  • the first copper oxide layer has a specific first orientation and the second copper oxide layer has a second orientation different from the first copper oxide layer.
  • the first copper oxide layer is preferably formed in a transparent yellowish thickness or in a transparent and colored thickness.
  • a copper layer made of copper (Cu) is formed between the transparent substrate and the first copper oxide layer, and the color is controlled according to the thickness of the copper layer.
  • the second copper oxide layer may be formed through natural oxidation, and may have a thickness of 1 to 5 nm. Preferably, the second copper oxide layer may have a thickness of 1 to 3 nm.
  • the transparent substrate is made of a ceramic material or a plastic material, the transparent substrate is a ceramic material, the first copper oxide layer is 5 to 200nm thickness or the transparent substrate is a plastic material, the first oxidation It is preferable that a copper layer consists of thickness of 5-50 nm.
  • the copper oxide thin film structure is preferably made to be transparent and flexible, and is applicable to a p-type semiconductor.
  • the above object is also a step of sputtering a defect-free single crystal copper ingot to a predetermined temperature to deposit a defect-free single crystal copper on the transparent substrate to produce a defect-free single crystal copper thin film structure; Maintaining the prepared defect-free single crystal copper thin film structure at a sputtering temperature for a predetermined time to oxidize the surface of the defect-free single crystal copper thin film to a second copper oxide layer having a predetermined direction; And heat-treating the oxidized defect-free single crystal copper thin film structure to oxidize the defect-free single crystal copper thin film excluding the second copper oxide layer to a first copper oxide layer having a predetermined direction. It is also achieved by a method for producing a copper oxide thin film structure using a thin film.
  • the first copper oxide layer is formed of a copper (I) (Cu 2 O) oxidation
  • the second copper oxide layer is formed of copper oxide (II) (CuO)
  • said first layer of copper oxide and the The second copper oxide layer has the same orientation
  • the heat treatment is the first copper oxide layer made of copper oxide (I) (Cu 2 O) by 15 to 20 minutes at 100 to 140 ° C. in an electric furnace in an air atmosphere. It is preferable to form
  • the first copper oxide layer is formed of copper (II) oxide (CuO)
  • the second copper oxide layer is formed of copper oxide (II) (CuO)
  • the first copper oxide layer is formed of a specific agent.
  • the second cuprous oxide layer has a second orientation different from the first cuprous oxide layer, and the heat treatment is performed for 3 to 15 minutes at 160 to 200 ° C. in an electric furnace in an air atmosphere. It is preferable to form the said 1st copper oxide layer which consists of (CuO).
  • the sputtering may be performed at 150 to 250 ° C. for 30 to 60 W for 3 to 40 minutes to form the defect-free single crystal copper thin film structure.
  • the copper oxide thin film manufactured by using a defect-free single crystal copper thin film can produce and provide a copper oxide thin film having high quality, which is highly efficient in optical and electrical properties, and mechanical stability. It can be effective.
  • FIG. 1 is a schematic diagram showing a copper oxide thin film structure using a defect-free single crystal copper thin film according to the present invention.
  • Figure 2 is a block diagram showing a step-by-step method of manufacturing a copper oxide thin film structure using a defect-free single crystal copper thin film according to the present invention.
  • FIG. 3 is an X-ray diffraction pattern diagram of a copper oxide thin film structure using a defect-free single crystal copper thin film according to a first embodiment of the present invention.
  • FIG 4 is an SEM image of a copper oxide thin film structure using a defect-free single crystal copper thin film according to the first embodiment of the present invention.
  • FIG. 5 is AFM data of a copper oxide thin film structure using a defect-free single crystal copper thin film according to the first embodiment of the present invention.
  • FIG. 6 is a copper oxide thin film structure using a defect-free single crystal copper thin film according to a first embodiment of the present invention.
  • FIG. 7 is an X-ray diffraction pattern diagram of a copper oxide thin film structure having a thickness of 10 to 60 nm and 61 to 90 nm using a defect-free single crystal copper thin film according to a second embodiment of the present invention.
  • FIG. 8 is an SEM image of a copper oxide thin film structure using a defect-free single crystal copper thin film according to a second embodiment of the present invention.
  • FIG. 9 is AFM data of a copper oxide (II) thin film structure using a defect-free single crystal copper thin film according to a second embodiment of the present invention.
  • 10 (a) is a copper oxide thin film structure having a thickness of 10 to 60nm using a defect-free single crystal copper thin film according to a second embodiment of the present invention.
  • the present invention relates to a copper oxide thin film structure using a defect-free single crystal copper thin film utilized as a thin film transistor (TFT), a photovoltaic cell, a photocatalyst, and the like and a method of manufacturing the same.
  • the copper oxide thin film structure and the manufacturing method using the defect-free single crystal copper thin film according to the present invention is characterized by improving the optical properties, electrical properties and mechanical stability by manufacturing a copper oxide thin film using a defect-free single crystal copper thin film. .
  • This feature can be achieved by injecting a transparent substrate into the sputtering equipment by using a defect-free single crystal copper ingot, and then maintaining the deposition temperature in the sputtering equipment and then heat-treating again in air.
  • the copper oxide thin film structure using the defect-free single crystal copper thin film according to the present invention and the manufacturing method thereof will be described in detail with reference to the accompanying drawings.
  • the copper oxide thin film structure will be described using the defect-free single crystal copper thin film according to the present invention.
  • the copper oxide thin film structure using the defect-free single crystal copper thin film according to the present invention comprises a transparent substrate 100, a first copper oxide layer 200 and a second copper oxide layer 300 as shown in FIG. Can be.
  • the transparent substrate 100 is a substrate that is transparent, structurally and chemically stable, and may be made of a ceramic material or a plastic material.
  • the ceramic material is a material such as sapphire, aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), silicon oxide (SiO 2 ), and the plastic material is polyimide (PI), polyethersulfone (polyethersulfone, Materials such as PES) and polycarbonate (PC) may be used, but are not limited thereto.
  • the first copper oxide layer 200 having a predetermined direction is formed on the transparent substrate 100.
  • the first copper oxide layer 200 serves as a p-channel photocatalyst of the transistor according to the use of the thin film structure.
  • the first copper oxide layer 200 may be formed of copper oxide (I) (Cu 2 O) or copper oxide (II) (CuO). This can be formed by depositing a defect-free single crystal copper ingot on the transparent substrate 100 by high frequency sputtering or direct current sputtering to oxidize a defect-free single crystal copper thin film (not shown) in an electric furnace.
  • the first copper oxide layer 200 is formed in a crystal direction in which excellent mobility and optical properties are improved due to high hole mobility compared to conventional polycrystalline copper oxide.
  • the first copper oxide layer 200 is formed of copper oxide (I) (Cu 2 O)
  • a crystal surface is formed in the [111] direction to have a constant cubic structure. Since the first copper oxide layer 200 is located in the middle of the thin film structure instead of the surface, copper oxide (I) (Cu 2 O) exists in the most stable form regardless of the surface energy. In other words, the atomic spacing is aligned in the [111] direction in a cubic form.
  • the first copper oxide layer 200 is formed of copper (II) oxide (CuO), [ In the] direction.
  • copper (II) oxide (CuO) since the stable form is a monoclinic (monoclinic) form in which atoms differ from each other, [ In the] direction.
  • the first copper oxide layer 200 may determine a color according to a purpose.
  • the first copper oxide layer 200 made of copper oxide (I) (Cu 2 O) may be formed to have a transparent yellowish thickness.
  • the first copper oxide layer 200 made of copper oxide (II) (CuO) may be formed to have a thickness that is transparent and colored such as brown and blue.
  • the first copper oxide layer 200 is preferably made of a thickness of 5 to 50nm when the transparent substrate 100 is a plastic material.
  • the first copper oxide layer 200 may not function properly, and in order to form the first copper oxide layer 200 to exceed 50 nm, Heat treatment should be performed in the case of the transparent substrate 100 made of a plastic material because the heat treatment is made at 150 to 250 °C can not be implemented with a thickness exceeding 50nm.
  • the transparent substrate 100 is a ceramic material
  • the first copper oxide layer 200 is preferably made of 5 to 200 nm. When the transparent substrate 100 is a ceramic material, heat treatment is performed at a higher temperature when the transparent substrate 100 is a ceramic material. Since it is possible, the first copper oxide layer 200 can be formed to a thickness of 200 nm.
  • the second copper oxide layer 300 is formed on the first copper oxide layer 200 to prevent peroxidation of the first copper oxide layer 200 and protects the first copper oxide layer 200 from external damage. It is a configuration having a constant direction.
  • the second copper oxide layer 300 is formed of copper oxide (II) (CuO) so that the copper oxide (II) (CuO) is disposed so that the crystal plane has a [111] orientation. This oxidizes only the defect-free single crystal copper thin film surface by maintaining the defect-free single crystal copper thin film on which the defect-free single crystal copper ingot is deposited on the transparent substrate 100 by high frequency sputtering or direct current sputtering at a deposition temperature in a sputtering equipment (not shown). It is possible by doing.
  • the second copper oxide layer 300 has a mismatch due to the difference in crystal plane with the first copper oxide layer 200 formed on the lower side, and thus the electrical characteristics of movement due to a decrease in the hole mobility of the first copper oxide layer 200. And in order to prevent the fall of optical characteristics, it is preferable to form in thickness of 1-5 nm. Since the second copper oxide layer 300 is formed through natural oxidation, the second copper oxide layer 300 may not be easily formed to a thickness outside the range of 1 to 5 nm. More preferred second copper oxide layer 300 has a thickness of 1 to 3 nm.
  • the oxide that is rusted is present in the copper oxide (I) (Cu 2 O) and copper oxide (II) (CuO) mixed.
  • the copper oxides of the two states are mixed with each other to give opaque red and black colors.
  • the second copper oxide layer 300 of the present invention is formed through natural oxidation, but is formed of defect-free single crystal copper, the second copper oxide layer 300 is formed of only copper (II) (CuO), which is arranged with a valence cycle. Since no grain boundary is formed, it can be made transparent.
  • the second copper oxide layer 300 is formed of copper (II) oxide (CuO)
  • the first copper oxide layer 200 is formed of copper oxide (I) (Cu 2 O)
  • the first copper oxide layer ( 200 and the second copper oxide layer 300 have the same orientation, that is, [111] orientation
  • the first copper oxide layer 200 is formed of copper oxide (II) (CuO)
  • the first copper oxide layer ( 200 has a specific first orientation
  • the second copper oxide layer 300 has a second orientation different from the first copper oxide layer 200. That is, the first copper oxide layer 200 and the second copper oxide layer 300 have different directions.
  • a copper layer made of copper (Cu) may be formed between the transparent substrate and the first copper oxide layer.
  • the copper layer refers to a layer which remains in a copper state without being oxidized after the first copper oxide layer 200 is oxidized.
  • the remaining copper thin film of about 60 nm corresponds to the copper layer. If the entire copper thin film is oxidized to the first copper oxide layer 200, the copper layer does not exist, and if not partially oxidized, the copper layer exists as the copper layer.
  • the color of the copper oxide thin film structure can be variously adjusted according to the thickness of the copper layer.
  • the copper oxide thin film structure of the present invention having such a configuration is made to be transparent and flexible. Particularly, in the case of flexibility, mobility can be implemented with 50 to 100.
  • the copper oxide thin film structure of the present invention may carry one density (carrier density) of 10 14 to 10 15 cm - corresponds to a very low value to 3, due to these characteristics of copper oxide thin-film semiconductor structure of p- type (type) Applicable to
  • a defect-free single crystal copper thin film (S110), forming a second copper oxide layer 300 (S120), and forming a first copper oxide layer 200 (S130). It may be configured to include.
  • step S110 is a step of forming a defect-free single crystal copper thin film on the transparent substrate 100.
  • the defect-free single crystal copper ingot can reflect the single crystal characteristics on the upper portion of the transparent substrate, and is deposited by a high-frequency sputtering method capable of depositing a large area, and thus the defect-free single crystal copper thin film. It is a process of manufacturing a defect-free single crystal copper thin film structure formed on the transparent substrate 100.
  • the high frequency sputtering is preferably performed at 30 to 60W at 150 to 250 ° C.
  • the adhesion between the first copper oxide and the transparent substrate is lowered when the first copper oxide layer 200 is formed, and the crystallinity is lowered according to the formation of grain boundaries and dislocations.
  • the defect-free single crystal copper thin film is not uniformly deposited and the electrical and mechanical properties are lowered, it is preferable to perform high frequency sputtering under the above conditions.
  • the transparent substrate 100 is made of a plastic material, since the plastic material may be deformed, it is preferable not to exceed 250 ° C. In this case, since the thickness of the defect-free single crystal copper thin film is determined according to the implementation time, the high frequency sputtering is preferably performed for 3 to 40 minutes.
  • Step S120 is a step of forming the surface of the defect-free single crystal copper thin film as the second copper oxide layer 300.
  • the deposition temperature is performed at 150 to 250 ° C. for 20 to 40 minutes. If the temperature is higher or lower than the temperature range, the surface of the defect-free single crystal copper thin film may remain partially without being completely oxidized to copper oxide (II) (CuO). In addition, if it is shorter than the time range, the film is not formed into a thin film, and if it is long, a phenomenon such as a decrease in the adhesive strength of the copper (II) (CuO) thin film is exhibited.
  • step S130 is a step of forming a defect-free single crystal copper thin film as the first copper oxide layer 200.
  • the defect-free single crystal copper thin film structure whose surface is oxidized to the second copper oxide layer 300 is heat-treated in an air furnace for a predetermined temperature and for a predetermined time, thereby forming the defect-free single crystal copper thin film on the first copper oxide layer 200. It is a process to oxidize.
  • the first copper oxide layer 200 is to be formed of copper oxide (I) (Cu 2 O)
  • the heat treatment temperature and time are performed at 100 to 140 ° C. for 15 to 20 minutes
  • the heat treatment temperature and time is preferably performed for 3 to 15 minutes at 160 to 200 °C.
  • copper oxide (I) (Cu 2 O) and copper oxide (II) (CuO) may be mixed and oxidized.
  • each copper oxide (I) (Cu 2 O) may be oxidized.
  • copper (II) oxide (CuO) are not formed properly, or the formed copper oxide (I) (Cu 2 O) and copper (II) oxide (CuO) may lower the crystallinity, so the temperature and time range It is preferable to carry out within.
  • the second copper oxide (II) layer 300 formed in step S120 uniformly induces the amount of oxygen introduced into the defect-free single crystal copper thin film during heat treatment to prevent peroxidation of the defect-free single crystal copper thin film layer and induces uniform oxidation so that the surface is smooth.
  • the first copper oxide layer 200 may be formed.
  • the first copper oxide layer 200 may be formed in a state in which a portion of the single crystal copper thin film is left as the copper layer instead of the entire single crystal copper thin film 200 by adjusting the heat treatment time. That is, the first copper oxide layer 200 may be formed on the entire single crystal copper thin film and may not include the copper layer. If necessary, the first copper oxide layer 200 may be formed while leaving some copper layers. . As such, when the copper layer is left, the color of the single crystal copper thin film structure can be adjusted according to the remaining thickness.
  • a copper oxide thin film structure including a first copper oxide layer 200 formed of copper oxide (I) (Cu 2 O)
  • FIG. 3 is X-ray diffraction data showing a comparison between the first copper oxide layer 200 and the second copper oxide layer 300 manufactured according to the preferred embodiment of the present invention. According to the data of FIG. 3, it can be seen that the first copper oxide layer 200 and the second copper oxide layer 300 according to the present invention have a crystal plane represented by (111). High electrical and optical properties are excellent.
  • FIG. 4 is an SEM image of a copper oxide thin film structure manufactured according to a preferred embodiment of the present invention.
  • the copper oxide thin film structure manufactured according to the embodiment of the present invention shows crystal grains as the crystal size decreases, but a uniform thin film can be confirmed due to oxidation of the defect-free single crystal copper thin film.
  • FIG. 5 is AFM image data of a copper oxide thin film structure prepared according to a preferred embodiment of the present invention.
  • the copper oxide thin film structure manufactured according to the embodiment of the present invention can identify a uniform and clean thin film, and particularly, the first copper oxide layer having a uniform surface with an RMS value of 10 nm or less. (200) can be confirmed, the mobility of the hole is improved due to the uniform surface is excellent in electrical and optical properties.
  • the copper oxide thin film structure including the first copper oxide layer 200 formed of copper oxide (I) (Cu 2 O) finally manufactured may be confirmed through FIG. 6.
  • a copper oxide thin film structure including a first copper oxide layer 200 formed of copper oxide (II) (CuO)
  • FIG. 7 is an X-ray diffraction pattern diagram data comparing and comparing a copper oxide thin film structure having a thickness of 10 to 60 nm and a copper oxide thin film structure having a thickness of 61 to 90 nm according to a preferred embodiment of the present invention.
  • the crystal surface of the first copper oxide layer 200 is ( Regardless of the thickness, the same thing can be confirmed, and because it has a certain directionality, the hole mobility is high, and the electrical and optical properties are excellent.
  • the copper oxide thin film structure according to the present invention may be formed due to oxidation of a defect-free single crystal copper thin film to identify a uniform thin film.
  • the copper oxide thin film structure manufactured according to the embodiment of the present invention can identify a uniform thin film, and in particular, the first copper oxide layer 200 having a uniform surface with an RMS value of 6.409 nm. ), It has high hole mobility due to the uniform surface, and has excellent electrical and optical properties.
  • the copper oxide thin film structure including the first copper oxide layer 200 formed of copper oxide (II) (CuO), which is finally manufactured, may be confirmed through FIG. 10.
  • the present invention relates to a copper oxide thin film structure and a method for manufacturing the same, and more particularly, to a copper oxide thin film structure using a defect-free single crystal copper thin film having enhanced optical properties, electrical properties, and mechanical stability by using a defect-free single crystal copper thin film. Available to the method.

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Abstract

La présente invention concerne une structure de film mince d'oxyde de cuivre utilisant un film mince de cuivre monocristallin sans défaut, et son procédé de fabrication, et est techniquement caractérisé par le fait qu'il comprend : un substrat transparent; une première couche d'oxyde de cuivre formée sur une portion supérieure du substrat transparent et ayant une directivité particulière; et une seconde couche d'oxyde de cuivre formée sur une portion supérieure de la première couche d'oxyde de cuivre afin d'empêcher la première couche d'oxyde de cuivre d'être peroxydée et de la protéger des dommages extérieurs et ayant une directivité particulière. Par conséquent, la présente invention montre l'effet qu'un film mince d'oxyde de cuivre fabriqué à l'aide d'un film mince de cuivre monocristallin sans défaut a pour effet d'être produit à un rendement élevé; et un film mince d'oxyde de cuivre de haute qualité ayant une caractéristique optique et électrique considérablement améliorée et une stabilité mécanique peuvent être fabriqués et fournis.
PCT/KR2017/006918 2016-06-30 2017-06-29 Structure de film mince d'oxyde de cuivre utilisant un film mince de cuivre monocristallin sans défaut et son procédé de fabrication WO2018004280A1 (fr)

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KR10-2016-0082838 2016-06-30
KR20160082831 2016-06-30
KR20160082838 2016-06-30
KR10-2016-0082831 2016-06-30

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006009083A (ja) * 2004-06-25 2006-01-12 Bridgestone Corp Ｃｕ２Ｏ膜の成膜方法及び太陽電池
KR20120079803A (ko) * 2011-01-05 2012-07-13 린텍 가부시키가이샤 투명 전극 기판, 그 제조 방법, 이 투명 전극 기판을 가지는 전자 디바이스 및 태양 전지
JP5247448B2 (ja) * 2006-08-10 2013-07-24 株式会社アルバック 導電膜形成方法、薄膜トランジスタの製造方法
KR101512236B1 (ko) * 2012-08-31 2015-04-16 주식회사 엘지화학 금속 구조체 및 이의 제조방법
KR101541517B1 (ko) * 2014-03-26 2015-08-03 부산대학교 산학협력단 단결정 구리를 이용한 나노 망사 다층 구조의 투명전극 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006009083A (ja) * 2004-06-25 2006-01-12 Bridgestone Corp Ｃｕ２Ｏ膜の成膜方法及び太陽電池
JP5247448B2 (ja) * 2006-08-10 2013-07-24 株式会社アルバック 導電膜形成方法、薄膜トランジスタの製造方法
KR20120079803A (ko) * 2011-01-05 2012-07-13 린텍 가부시키가이샤 투명 전극 기판, 그 제조 방법, 이 투명 전극 기판을 가지는 전자 디바이스 및 태양 전지
KR101512236B1 (ko) * 2012-08-31 2015-04-16 주식회사 엘지화학 금속 구조체 및 이의 제조방법
KR101541517B1 (ko) * 2014-03-26 2015-08-03 부산대학교 산학협력단 단결정 구리를 이용한 나노 망사 다층 구조의 투명전극 및 그 제조방법

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