WO2018004093A1 - Organic semiconductor device and method for preparing same - Google Patents

Abstract

An organic semiconductor device preparation method, according to an aspect of the present invention, comprises a step for laminating an organic semiconductor solution, which comprises a hydroxyl group (M-OH, M (metal)) such as a silanol group (Si-OH), on a substrate on which a dielectric body is formed. A novel organic semiconductor device is prepared by means of the utilization as a reactor comprising a hydroxyl group (M-OH, M (metal)) such as a silanol group (Si-OH) present on a bulk and the surface of an organic semiconductor layer, and forming a self-assembled monomolecular layer showing various properties.

Description

Organic semiconductor device and its manufacturing method

The present invention relates to an organic semiconductor device and a method of manufacturing the same.

In recent years, research is being actively conducted to apply a flexible material that is folded and bent to a display or a thin film solar cell. In order to manufacture an electronic device having such mechanical properties, it is known to use an organic semiconductor instead of an inorganic semiconductor, which has been previously used, and thus, there is a high interest in organic semiconductors. Since the organic semiconductor is more sensitive to the external environment than the inorganic semiconductor, a process for improving the stability of the electrical properties and the physicochemical durability is required. In this way, the surface of the dielectric to which the organic semiconductor is bonded or the organic semiconductor device is modified. We use the sealing method to finish. However, this method has many limitations in device fabrication because of the complexity of the process and inefficiency.

In particular, as a method for modifying the surface of an organic semiconductor, a research case of modifying surface conductivity or electrical properties by forming an organic semiconductor and a self-assembled monolayer through a vapor phase process is known. However, it is known that the method using such a gas phase process has great limitations in providing flexible devices of various shapes and applications or improving productivity.

In addition, in order to form a self-assembled monolayer on the organic semiconductor, a reactor must exist on the surface of the organic semiconductor. In general, the organic semiconductor has a problem that physical adsorption must be used because such a reactor does not exist or a large amount thereof. In addition, in the case of forming a self-assembled monolayer through the reactor synthesized by introducing a reactor in the organic semiconductor, it is known that the performance of the semiconductor is reduced by the synthesized reactor. In addition, there is a problem that the organic semiconductor is damaged by the solvent used to proceed the solution process to form the self-assembled monolayer.

 Accordingly, in the present invention, it is possible to increase the chemical resistance of the organic semiconductor and thereby to improve the electrical properties of the organic electronic device, and to effectively control the physicochemical or electro-optical properties of the organic semiconductor surface or bulk. It is intended to provide a semiconductor manufacturing method.

In this regard, Korean Patent Laid-Open Publication No. 10-2010-0006294 (name of the invention: an organic nanofiber structure based on a self-assembled organic gel, an organic nanofiber transistor using the same, and a method of manufacturing the same) has a gate insulating film using a simple wet process. A method for producing an organic thin film transistor which can be formed, has excellent transistor characteristics, good adhesion, and excellent durability is disclosed.

The present invention is to solve the above-mentioned problems of the prior art, to laminate a gelled semiconductor solution containing a hydroxyl group (M-OH, M (metal)), such as silanol group (silanol group (Si-OH)) It provides a method of manufacturing a high-performance or high-sensitivity organic semiconductor device by effectively controlling the surface or bulk properties of the organic semiconductor thin film through a solution process.

However, the technical problem to be achieved by the present embodiment is not limited to the technical problem as described above, and other technical problems may exist.

As a technical means for achieving the above-described technical problem, a method of manufacturing an organic semiconductor device according to the first aspect of the present invention is a hydroxyl group (M, such as silanol group (Si-OH) on a substrate on which a dielectric is formed (M) Stacking a semiconductor solution comprising -OH, M (metal)).

Stacking an organic semiconductor solution containing a hydroxyl group (M-OH, M (metal)) such as a silanol group (Si-OH) on the surface or bulk of the organic material according to the second aspect of the present invention. Include.

The organic semiconductor device according to the third aspect of the present invention includes a gate electrode, a dielectric layer formed on the gate electrode, a semiconductor layer formed on the dielectric layer, and a source electrode and a drain electrode formed on the semiconductor layer. In this case, the semiconductor layer is formed by gelling a semiconductor solution containing a hydroxyl group (M-OH, M (metal)) such as silanol group (Si-OH).

According to the aforementioned problem solving means of the present invention, the silanol group of the self-assembled thin film layer compound and the silanol group of the organic semiconductor solution used to control the surface or bulk physical properties of the organic semiconductor undergo a condensation reaction, thereby eliminating the hole trap. Thus, the transistor element characteristics can be improved. In addition, it is possible to effectively control the chemical resistance, durability and electrical properties of the organic semiconductor device.

1 is a flowchart illustrating a method of manufacturing an organic semiconductor device according to an embodiment of the present invention.

2A and 2B are diagrams for describing a method of manufacturing an organic semiconductor device according to an embodiment of the present invention.

3 is a view illustrating an organic semiconductor switching device manufactured using a semiconductor layer according to an embodiment of the present invention.

4 is a diagram illustrating an organic semiconductor switching device manufactured using a semiconductor layer according to an embodiment of the present invention.

5A and 5B illustrate experimental characteristics of an organic semiconductor device according to an embodiment of the present invention.

6A and 6B illustrate experimental characteristics of an organic semiconductor device according to an embodiment of the present invention.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is "connected" to another part, this includes not only "directly connected" but also "electrically connected" with another element in between. . In addition, when a part is said to "include" a certain component, which means that it may further include other components, except to exclude other components unless otherwise stated.

The organic semiconductor used in the present invention is characterized by having a π-conjugated structure in which a single bond and a double bond between constituent carbon atoms are alternately repeated. Representative π-conjugated polymer materials include polyacetylene, polypyrrole, polyaniline, polythiophene (PTh), and polyphenylenevinylene (PPV). ), And derivatives thereof. Examples of π-conjugated structural small molecules include pentacene, perylene, rubrene, and phthalocyanine. .

1 is a flowchart illustrating a method of manufacturing an organic semiconductor device according to an embodiment of the present invention, and FIGS. 2A and 2B are diagrams for describing a method of manufacturing an organic semiconductor device according to an embodiment of the present invention.

First, an organic semiconductor solution for forming a semiconductor layer is prepared (S100).

In the present invention, after preparing a semiconductor solution by mixing a polymer semiconductor (diketopyrrolo-pyrrole-dithiophene-thienothiophene, DPP-DTT) in a solvent, the organic metal compound precursor stock solution is added and stirred to produce an organic semiconductor solution.

Herein, the material used as the organic solvent may include one of chloroform, dichloromethane, acetone, pyridine, tetrahydrofuran, chlorobenzene, dichlorobenzene, xylene, toluene, or a mixture thereof.

In addition, the polymer semiconductor is not particularly limited as a generally used organic semiconductor material, but a material having high carrier mobility is preferable. Specific examples include polythiophenes such as poly-3-hexylthiophene and polybenzothiophene, poly (p-phenylenevinylene) such as polypyrroles and poly (p-phenylenevinylene), polyaniline, Nitrogen-containing aromatic rings such as polyacetylenes, polydiacetylenes, polycarbazoles, polyfurans such as polyfuran and polybenzofuran, pyridine, quinoline, phenanthroline, oxazole and oxadiazole as structural units Condensed polycyclic aromatic compounds such as polyheteroaryls, anthracene, pyrene, naphthacene, pentacene, hexacene, rubrene, furan, thiophene, benzothiophene, dibenzofuran, pyridine, quinoline, phenanthroline, oxa Nitrogen-containing aromatic compounds such as sol and oxadiazole, aromatic amine derivatives represented by 4,4'-bis (N- (3-methylphenyl) -N-phenylamino) biphenyl, bis (N-allylcarbazole) or Biscarbazole derivatives such as bis (N-alkylcarbazole), pyrazoline derivatives, stilbene-based compounding , Metal phthalocyanines such as hydrazone compound, copper phthalocyanine, metal porphyrins such as copper porphyrin, distyrylbenzene derivative, aminostyryl derivative, aromatic acetylene derivative, naphthalene-1,4,5,8-tetracarboxylic acid imide And organic pigments such as condensed cyclic tetracarboxylic acid diimides such as perylene-3,4,9,10-tetracarboxylic acid diimide, merocyanine, phenoxazine, and rhodamine.

At this time, the organometallic precursors (organometallic precursors) using the material of the formula (1).

[Formula 1]

The precursor may comprise a metal (M) and a reactor (X). In this case, the reactor may be formed by synthesizing various materials to suit the purpose.

Y in Formula 1 is an alkyl group, a cycloalkyl group, a heterocyclic group, an alkenyl group, a cycloalkenyl group, an alkynyl group, an alkoxy group, an alkylthio group, an arylether group, an arylthioether group, an aryl group, a heteroaryl group, a halogen atom, Cyano group, formyl group, alkylcarbonyl group, arylcarbonyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, alkylcarbonyloxy group, arylcarbonyloxy group, carbamoyl group, amino group or silyl group.

In general, the metal (M) is Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Si, Cu, Zn, Pd, Ag, Au, Hg, Pt, Ta, Mo, Zr, Ta, Mg, Sn , Ge, Y, Nb, Tc, Ru, Rh, Lu, Hf, W, Re, Os, Ir, Lr, Rf, Db, Sg, Bh, Hs, Mt, Ds, Rg and Uub Although it may contain the above metal, it is not necessarily limited to these.

In addition, the reactor (X) is each hydrogen, alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl group, alkoxy group, alkylthio group, arylether group, arylthioether group, aryl group, heteroaryl group , Halogen atom, cyano group, formyl group, alkylcarbonyl group, arylcarbonyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, alkylcarbonyloxy group, arylcarbonyloxy group, carbamoyl group, amino group or silyl group can be selected. .

According to this process, the organic semiconductor solution includes a hydroxyl group (M-OH, M (metal)) such as a silanol group (Si-OH).

Next, the solvated semiconductor solution thus produced is applied to the surface of the object, and then gelled by a sol-gel method to form a gelled organic semiconductor layer (S110).

As shown in FIGS. 2A and 2B, an organic semiconductor solution containing a hydroxyl group (M-OH, M (metal)), such as a silanol group (Si-OH), is laminated and gelled. Therefore, there are a large number of hydroxyl groups (M-OH, M (metal)) such as silanol groups (Si-OH) on the surface and bulk of the organic semiconductor, which functions as a reactor. Meanwhile, an annealing process may be added during the gelation process of the organic semiconductor layer 10.

Next, after the organic semiconductor layer 10 is formed, the self-assembled monolayer 20 is formed (S120).

In the case of the present invention, since a plurality of reactors exist on the surface or bulk of the organic semiconductor layer 10, the self-assembled monolayer 16 can be formed through a solution process rather than a gas phase process. In addition, surface and internal physical properties can be controlled through chemical bonding between the self-assembled monolayer and the gelled organic semiconductor layer. Specifically, as shown in FIG. 2A, when the initial heat treatment is not performed, the organometallic precursor is bonded in a shape into the organic semiconductor bulk, and when the initial heat treatment is performed as shown in FIG. 2B, the organometallic precursor is It may be formed in a form bonded to the surface of the organic semiconductor layer 10.

Meanwhile, a compound of Chemical Formula 2 is used as the compound for forming the self-assembled monolayer.

[Formula 2]

X is selected from the group consisting of non-aromatic substances such as -NH ₂ , -CH ₃ , -SH, -COOH, -CF ₃ , Cl and any aromatics, and in addition to the electron acceptor group for attracting electrons and electron donor for pushing electrons We include all groups.

Y may comprise a metal and a reactor. In this case, the reactor may be formed by synthesizing various materials to suit the purpose.

Generally, the metals are Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Si, Cu, Zn, Pd, Ag, Au, Hg, Pt, Ta, Mo, Zr, Ta, Mg, Sn, Ge, One or more metals selected from the group consisting of Y, Nb, Tc, Ru, Rh, Lu, Hf, W, Re, Os, Ir, Lr, Rf, Db, Sg, Bh, Hs, Mt, Ds, Rg and Uub It may include, but is not limited to these.

In addition, the reactor is hydrogen, alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl group, alkoxy group, alkylthio group, arylether group, arylthioether group, aryl group, heteroaryl group, halogen atom, respectively , Cyano group, formyl group, alkylcarbonyl group, arylcarbonyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, alkylcarbonyloxy group, arylcarbonyloxy group, carbamoyl group, amino group or silyl group.

R in Formula 2 may be selected from aliphatic groups including alkyl chains, or aromatic groups including benzene, thiophene, and the like, and n may be a natural number.

For example, the following organometallic precursors may be used.

Octyltrichlorosilane (OTS), Octyltrimethoxysilane (OTMS), Octyltriethoxysilane (OCT), Hexamethyldisilazane (HMDS), Octadecyltrichlorosilane (Octadecyltrichlorosilane; ODTS), octadecyltrimethoxysilane (OTMS), octadecyltriethoxysilane (OTE), (3-aminopropyl) trichlorosilane [(3-Aminopropyl) trichlorosilane], (3-aminopropyl ) Trimethoxysilane [(3-Aminopropyl) trimethoxysilane; APTMS], (3-aminopropyl) triethoxysilane [(3-Aminopropyl) triethoxysilane; APTES], Perfluorodecyltrichlorosilane (PFTS), Perfluorodecyltrimethoxysilane (PFMS), Perfluorodecyltriethoxysilane (PFES), Mercaptopropyltrichlorosilane (Mercaptopropyltrichlorosilane; MPTCS), mercaptopropyltrimethoxysilane (MPTMS), mercaptopropyltriethoxysilane (MPTES), (heptadecafluoro-1,1,2,2-tetrahydrodecyl) Trichlorosilane [(Heptadecafluoro-1,1,2,2-tetrahydrodecyl) trichlorosilane; FDTS], (heptadecafluoro-1,1,2,2-tetrahydrodecyl) trimethoxysilane [(Heptadecafluoro-1,1,2,2-tetrahydrodecyl) trimethoxysilane; FDMS], (heptadecafluoro-1,1,2,2-tetrahydrodecyl) triethoxysilane [(Heptadecafluoro-1,1,2,2-tetrahydrodecyl) triethoxysilane; FDES], perfluorodecyltrichlorosilane (1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane; FOTS), perfluorodecyltrimethoxysilane (1H, 1H, 2H, 2H-perfluorodecyltrimethoxysilane; FOMS), perfluorodecyl Triethoxysilane (1H, 1H, 2H, 2H-perfluorodecyltriethoxysilane (FOES), dichlorodimethylsilane (DDMS), trichloromethylsilane (TCMS) and combinations thereof.

Through this process it is possible to control the surface and bulk properties of the organic semiconductor. For example, various organic semiconductor devices may be manufactured by performing an additional process based on a solution process on top of a semiconductor layer on which a self-assembled monolayer according to an embodiment of the present invention is formed to manufacture an organic semiconductor device.

Next, an organic semiconductor device is manufactured by additionally forming various electrodes such as an insulating layer or a source electrode and a drain electrode on the organic semiconductor layer 10 on which the self-assembled monolayer 20 is formed (S130).

For example, when manufacturing an organic transistor, an insulating layer and various electrodes are additionally formed to manufacture an organic semiconductor device. A detailed configuration will be described with reference to the drawings.

3 is a view illustrating an organic semiconductor switching device manufactured using a semiconductor layer according to an embodiment of the present invention.

The illustrated organic semiconductor switching device 300 illustrates an organic FET (OFET) having a top gate structure. The organic semiconductor switching device 300 includes a substrate 310, a drain electrode 320, a source electrode 322, a semiconductor layer 330, a dielectric layer 340, and a gate electrode 350.

The organic semiconductor layer 330 is formed by gelling the organic semiconductor solution containing the silanol group described above, and then forming a self-assembled monolayer. The organic semiconductor layer 330 is in a gelled state and has chemical resistance, and includes a plurality of reactors to form a self-assembled monolayer, thereby controlling the surface and bulk physical properties of the dielectric layer. In addition, the present invention can be applied to various types of dielectric layers, and to various types of chemical sensors or biosensors.

First, in the state where the drain electrode 320 and the source electrode 322 are formed on the substrate 310, the organic semiconductor layer 330 is formed through the processes of FIGS. 1 and 2.

After the formation of the organic semiconductor layer 330, the dielectric layer 340 may be formed and the gate electrode 350 may be formed on the organic semiconductor switching device 300 having a top gate structure.

4 is a diagram illustrating an organic semiconductor switching device manufactured using a semiconductor layer according to an embodiment of the present invention.

The illustrated organic semiconductor switching device 500 illustrates an organic FET having a bottom gate structure. The organic semiconductor switching device 400 includes a gate electrode 410, a dielectric layer 420, an organic semiconductor layer 430, a drain electrode 440, and a source electrode 442.

First, after the gate electrode 410 is formed through the processes of FIGS. 1 and 2, the dielectric layer 420 is formed, the organic semiconductor layer 430 is formed, and then a self-assembled monolayer is formed. The drain electrode 440 and the source electrode 442 are formed on the upper portion 430 through a vapor phase process.

 <Example>

The semiconductor solution is produced by placing a polymer semiconductor (diketopyrrolo-pyrrole-dithiophene-thienothiophene (DPP-DTT)) in a chlorobenzene solution at 80 ° C. and maintaining a stirring state for about 1 hour and 30 minutes. The precursor stock solution (1,8-bead (trichlorosilyl) octane (1,8-BIS (TRICHLOROSILYL) OCTANE)) was added to the polymer semiconductor solution thus prepared, and the mixture was stirred for about 1 hour while maintaining a temperature of about 80 ° C. .

The semiconductor solution thus produced is stacked on the silicon substrate by performing at least one of various printing methods such as spin coating, spray coating, inkjet printing, dip coating, drop casting, and bar coating on the silicon substrate on which the dielectric is formed.

5A and 5B illustrate experimental characteristics of an organic semiconductor device according to an embodiment of the present invention, and FIGS. 6A and 6B illustrate experimental characteristics of an organic semiconductor device according to an embodiment of the present invention. to be.

As shown in FIG. 5A, octadecyltrichlorosilane as a self-assembled monolayer in the case where the initial heat treatment was not performed (upper figure) and the substrate coated with the organic semiconductor thin film was subjected to the initial heat treatment at 180 ° C. (lower figure). In the case of stacking (Octadecyltrichlorosilane; ODTS), the contact angles of the octadecyltrichlorosilane were not increased. In addition, as shown in FIG. 5B, when the initial heat treatment is not performed (upper figure) and the substrate coated with the organic semiconductor thin film is subjected to an initial heat treatment at 180 ° C. (lower figure), the self-assembled monolayer (3- Aminopropyl (triethoxysilane)) [3-Aminopropyl (triethoxysilane); APS], it can be seen that the contact angle is reduced respectively compared to the case where (3-aminopropyl (triethoxysilane)) is not laminated. This phenomenon may be attributed to the fact that the self-assembled monolayer is combined with the reactor of the semiconductor layer and the characteristics of the surface of the organic semiconductor have changed.

In addition, as shown in FIG. 6A, after the organic semiconductor layer according to the present invention is laminated on a SiO ₂ substrate and before the initial heat treatment is performed (left graph), before octadecyltrichlorosilane is deposited and octadecyltrichloro Looking at the graph after laminating the silane, it can be seen that the threshold voltage is shifted (-). In the case of the initial heat treatment (right graph), the graphs before stacking octadecyltrichlorosilane and after stacking octadecyltrichlorosilane can be seen that the threshold voltage is shifted positively and hysteresis increases. 6B, (3-aminopropyl (triethoxysilane)) is obtained in the case where the initial heat treatment is not performed after the organic semiconductor layer according to the present invention is laminated on a SiO ₂ substrate (left graph). Looking at the graphs before stacking and after stacking (3-aminopropyl (triethoxysilane)), it can be seen that the threshold voltages are shifted by (-), respectively. In the case of the initial heat treatment (right graph), the graph before stacking (3-aminopropyl (triethoxysilane)) and after stacking (3-aminopropyl (triethoxysilane)) shows that the threshold voltage It can be seen that each shift is negative and hysteresis increases.

When the initial heat treatment is not performed, the silanol group of the organometallic precursor octadecyltrichlorosilane or (3-aminopropyl (triethoxysilane)) is bonded to the silanol group of the organic semiconductor surface and the bulk layer, The octadecyl trichlorosilane or (3-aminopropyl (triethoxysilane)) is combined to change the surface contact angle of the organic semiconductor layer, and the effect of changing the threshold voltage and off current. When the initial heat treatment is performed, octadecyltrichlorosilane is bonded to the silanol group of octadecyltrichlorosilane or (3-aminopropyl (triethoxysilane)), which is an organometallic precursor, on the surface of the organic semiconductor. Or (3-aminopropyl (triethoxysilane)) is bonded to change the surface contact angle of the organic semiconductor layer, the effect of changing the threshold voltage and hysteresis occurs. However, as shown in FIG. 2A, when the initial heat treatment is not performed, the prominent effect occurs because the organometallic precursor is bonded not only to the surface but also to the bulk layer.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.

The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

Claims (14)

1. In the manufacturing method of an organic semiconductor element,

   Depositing an organic semiconductor layer by applying an organic semiconductor solution on a substrate; and

   Forming a self-assembled monolayer on the surface or bulk of the organic semiconductor layer.
2. The method of claim 1,

   The organic semiconductor solution is an organic semiconductor device manufacturing method is produced by putting the organometallic compound precursor stock solution in a polymer semiconductor solution and stirred.
3. The method of claim 2,

   An organic semiconductor device manufacturing method using the following Chemical Formula 1 as the organometallic compound precursor stock solution.

   [Formula 1]

   

   M is Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Si, Cu, Zn, Pd, Ag, Au, Hg, Pt, Ta, Mo, Zr, Ta, Mg, Sn, Ge, Y At least one metal selected from the group consisting of Nb, Tc, Ru, Rh, Lu, Hf, W, Re, Os, Ir, Lr, Rf, Db, Sg, Bh, Gs, Mt, Ds, Rg, and Uub,

   Y is an alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl group, alkoxy group, alkylthio group, arylether group, arylthioether group, aryl group, heteroaryl group, halogen atom, cyano group, Formyl, alkylcarbonyl, arylcarbonyl, carboxyl, alkoxycarbonyl, aryloxycarbonyl, alkylcarbonyloxy, arylcarbonyloxy, carbamoyl, amino or silyl

   X is hydrogen, alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl group, alkoxy group, alkylthio group, arylether group, arylthioether group, aryl group, heteroaryl group, halogen atom, sia No group, formyl group, alkylcarbonyl group, arylcarbonyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, alkylcarbonyloxy group, arylcarbonyloxy group, carbamoyl group, amino group or silyl group.
4. The method of claim 1,

   The self-assembled monolayer is an organic semiconductor device manufacturing method using a material of the formula (2).

   [Formula 2]

   

   X is selected from the group consisting of non-aromatic substances such as —NH ₂ , —CH ₃ , —SH, —COOH, —CF ₃ or Cl and any aromatics,

   Y includes a metal and a reactor,

   The metal is Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Si, Cu, Zn, Pd, Ag, Au, Hg, Pt, Ta, Mo, Zr, Ta, Mg, Sn, Ge, Y At least one metal selected from the group consisting of Nb, Tc, Ru, Rh, Lu, Hf, W, Re, Os, Ir, Lr, Rf, Db, Sg, Bh, Hs, Mt, Ds, Rg and Uub In addition, the reactor is hydrogen, alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl group, alkoxy group, alkylthio group, arylether group, arylthioether group, aryl group, heteroaryl group, halogen It is selected from the group consisting of an atom, cyano group, formyl group, alkylcarbonyl group, arylcarbonyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, alkylcarbonyloxy group, arylcarbonyloxy group, carbamoyl group, amino group or silyl group,

   R is selected from aliphatic groups including alkyl chains or aromatic groups including benzene, thiophene and the like, n is a natural number.
5. The method of claim 1,

   Stacking the organic semiconductor layer

   A method of manufacturing an organic semiconductor device comprising the step of applying a precursor stock solution to a polymer semiconductor solution by stirring and applying the resulting organic semiconductor solution onto the substrate, followed by gelling the organic semiconductor solution by a sol-gel method.
6. The method of claim 1,

   Stacking the organic semiconductor layer

   Stacking a semiconductor layer by spin coating, spray coating, inkjet printing, dip coating, drop casting, and bar coating on the organic semiconductor solution formed by adding a precursor stock solution to a polymer semiconductor solution and stirring the substrate; An organic semiconductor device manufacturing method comprising.
7. The method of claim 1,

   Forming a drain electrode and a source electrode on the substrate before performing the laminating step of the organic semiconductor layer;

   Forming an insulating layer on the organic semiconductor layer on which the self-assembled monolayer is formed; And

   And forming a gate electrode on the insulating layer.
8. In the method of modifying the interface of the organic material,

   Stacking an organic semiconductor layer by applying an organic semiconductor solution containing a hydroxyl group (M-OH, M (metal)) such as a silanol group (Si-OH) on a substrate; and

   Forming a self-assembled monolayer on the surface or bulk of the organic semiconductor layer.
9. The method of claim 8,

   The organic semiconductor solution is an interface modification method of the organic material is produced by putting the organometallic compound precursor stock solution in a polymer semiconductor solution and stirred.
10. The method of claim 9,

    The organic-metal compound precursor stock solution is a method of interfacial reforming of an organic material using the material of the formula (3).

    [Formula 3]

    

    M is Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Si, Cu, Zn, Pd, Ag, Au, Hg, Pt, Ta, Mo, Zr, Ta, Mg, Sn, Ge, Y At least one metal selected from the group consisting of Nb, Tc, Ru, Rh, Lu, Hf, W, Re, Os, Ir, Lr, Rf, Db, Sg, Bh, Gs, Mt, Ds, Rg, and Uub,

    Y is an alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl group, alkoxy group, alkylthio group, arylether group, arylthioether group, aryl group, heteroaryl group, halogen atom, cyano group, Formyl, alkylcarbonyl, arylcarbonyl, carboxyl, alkoxycarbonyl, aryloxycarbonyl, alkylcarbonyloxy, arylcarbonyloxy, carbamoyl, amino or silyl

    X is hydrogen, alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl group, alkoxy group, alkylthio group, arylether group, arylthioether group, aryl group, heteroaryl group, halogen atom, sia No group, formyl group, alkylcarbonyl group, arylcarbonyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, alkylcarbonyloxy group, arylcarbonyloxy group, carbamoyl group, amino group or silyl group.
11. The method of claim 8,

    The self-assembled monolayer is an interface modification method of an organic material using the material of the formula (4).

    [Formula 4]

    

    X is selected from the group consisting of non-aromatic substances such as -NH ₂ , -CH ₃ , -SH, -COOH, -CF ₃ or Cl and any aromatics,

    Y includes a metal and a reactor,

    The metal is Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Si, Cu, Zn, Pd, Ag, Au, Hg, Pt, Ta, Mo, Zr, Ta, Mg, Sn, Ge, Y At least one metal selected from the group consisting of Nb, Tc, Ru, Rh, Lu, Hf, W, Re, Os, Ir, Lr, Rf, Db, Sg, Bh, Hs, Mt, Ds, Rg and Uub In addition, the reactor is hydrogen, alkyl group, cycloalkyl group, heterocyclic group, alkenyl group, cycloalkenyl group, alkynyl group, alkoxy group, alkylthio group, arylether group, arylthioether group, aryl group, heteroaryl group, halogen It is selected from the group consisting of an atom, cyano group, formyl group, alkylcarbonyl group, arylcarbonyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, alkylcarbonyloxy group, arylcarbonyloxy group, carbamoyl group, amino group or silyl group,

    R is selected from aliphatic groups including alkyl chains or aromatic groups including benzene, thiophene and the like, n is a natural number.
12. The method of claim 8,

    Stacking the organic semiconductor layer

    A method of interfacial reforming of an organic material, comprising applying a precursor stock solution to a polymer semiconductor solution and applying the resulting organic semiconductor solution onto the substrate, and then gelling the organic semiconductor solution according to a sol-gel method.
13. The method of claim 8,

    Stacking the organic semiconductor layer

    Stacking a semiconductor layer by spin coating, spray coating, inkjet printing, dip coating, drop casting, and bar coating on the organic semiconductor solution formed by adding a precursor stock solution to a polymer semiconductor solution and stirring the substrate; Interface modification method of the organic material to contain.
14. In an organic semiconductor device,

    Gate electrode,

    A dielectric layer formed to contact the gate electrode,

    An organic semiconductor layer formed to contact the dielectric layer;

    A source electrode and a drain electrode formed to contact the organic semiconductor layer,

    The organic semiconductor layer is formed by gelling an organic semiconductor solution containing a hydroxyl group (M-OH, M (metal)) such as silanol group (silanol group, Si-OH),

    An organic semiconductor having a self-assembled monolayer formed on top of the organic semiconductor layer by using as a reactor containing a hydroxyl group (M-OH, M (metal)) such as the silanol group (Si-OH) device.

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