WO2017219378A1 - 微发光二极管显示器 - Google Patents

微发光二极管显示器 Download PDF

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Publication number
WO2017219378A1
WO2017219378A1 PCT/CN2016/087636 CN2016087636W WO2017219378A1 WO 2017219378 A1 WO2017219378 A1 WO 2017219378A1 CN 2016087636 W CN2016087636 W CN 2016087636W WO 2017219378 A1 WO2017219378 A1 WO 2017219378A1
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Prior art keywords
emitting diode
light emitting
pixel
micro light
display
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French (fr)
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陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/116,215 priority Critical patent/US20180206299A1/en
Publication of WO2017219378A1 publication Critical patent/WO2017219378A1/zh
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a micro light emitting diode display.
  • Flat display devices are widely used in various consumer electronics such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers, etc. due to their high image quality, power saving, thin body and wide application range. Products have become the mainstream in display devices.
  • a micro LED ( ⁇ LED) display is a display that realizes image display by using a high-density and small-sized LED array integrated on one substrate as a display pixel.
  • each pixel Addressable, individually driven and lit can be seen as a miniature version of the outdoor LED display, reducing the pixel distance from millimeters to micrometers, and the ⁇ LED display is the same as the Organic Light-Emitting Diode (OLED) display.
  • OLED Organic Light-Emitting Diode
  • Self-illuminating display but compared with OLED display, ⁇ LED display has the advantages of better material stability, longer life, no image imprinting, etc., and is considered to be the biggest competitor of OLED display.
  • Micro Transfer Printing technology is currently the mainstream method for preparing ⁇ LED display devices.
  • the specific preparation process is as follows: First, a micro light-emitting diode is grown on a sapphire-based substrate, and then laser lift-off (LLO) is used to micro-transfer.
  • LLO laser lift-off
  • the LED bare chip is separated from the sapphire substrate, and then a patterned polydimethylsiloxane (PDMS) transfer head is used to adsorb the micro LED bare chip from the sapphire substrate, and The PDMS transfer head is aligned with the receiving substrate, and then the micro light emitting diode bare chip adsorbed by the PDMS transfer head is attached to a preset position on the receiving substrate, and then the PDMS transfer head is peeled off, thereby completing the micro light emitting diode bare chip. Transfer to the receiving substrate to produce a ⁇ LED display device.
  • PDMS polydimethylsiloxane
  • the structure of the blue micro-light-emitting diode and the green micro-light-emitting diode is mainly the horizontal structure of the sapphire substrate
  • the structure of the red micro-light-emitting diode is mainly the vertical structure of the gallium arsenide (GaAs) substrate, due to the red micro-light emitting diode and the blue
  • GaAs gallium arsenide
  • the color gamut display using only the micro light-emitting diode as the basic display unit has a narrow color gamut and a poor display effect, in order to optimize the micro light-emitting diode display The display effect requires widening its color gamut.
  • An object of the present invention is to provide a micro light emitting diode display capable of reducing the difficulty in manufacturing a micro light emitting diode display, broadening the color gamut of the micro light emitting diode display, and enhancing the display effect of the micro light emitting diode display.
  • the present invention firstly provides a micro light emitting diode display comprising: a substrate; and a plurality of display pixels arranged in an array on the substrate;
  • Each display pixel includes at least one red sub-pixel
  • the red sub-pixel includes: at least one white micro light emitting diode disposed on the substrate, and a red filter layer disposed on the white micro light emitting diode.
  • Each display pixel further includes a green sub-pixel and a blue sub-pixel;
  • the green sub-pixel includes: at least one white micro light emitting diode disposed on the substrate, and a green filter layer disposed on the white micro light emitting diode;
  • the blue sub-pixel includes: at least one white micro light emitting diode disposed on the substrate, and a blue filter layer disposed on the white micro light emitting diode.
  • Each display pixel further includes a green sub-pixel and a blue sub-pixel;
  • the green sub-pixel includes: at least one white micro light emitting diode disposed on the substrate, and a green filter layer disposed on the white micro light emitting diode;
  • the blue sub-pixel includes at least one blue micro light emitting diode disposed on the substrate.
  • Each display pixel further includes a green sub-pixel and a blue sub-pixel;
  • the green sub-pixel includes: at least one green micro-light emitting diode disposed on the substrate;
  • the blue sub-pixel includes: at least one white micro light emitting diode disposed on the substrate, and a blue filter layer disposed on the white micro light emitting diode.
  • Each display pixel further includes a green sub-pixel and a blue sub-pixel;
  • the green sub-pixel includes: at least one green micro-light emitting diode disposed on the substrate;
  • the blue sub-pixel includes at least one blue micro light emitting diode disposed on the substrate.
  • a red photoluminescent material is also disposed in the red filter layer.
  • a blue photoluminescent material is also disposed in the blue filter layer.
  • a green photoluminescent material is also disposed in the green filter layer.
  • the present invention also provides a micro light emitting diode display comprising: a substrate; and a plurality of display pixels arranged in an array arranged on the substrate;
  • Each display pixel includes at least one red sub-pixel
  • the red sub-pixel includes: at least one blue micro light emitting diode disposed on the substrate Or at least one green micro light emitting diode, and a red photoluminescent layer disposed on the blue micro light emitting diode or the green micro light emitting diode.
  • Each display pixel further includes a green sub-pixel and a blue sub-pixel;
  • the green sub-pixel includes: at least one green micro-light emitting diode disposed on the substrate;
  • the blue sub-pixel includes at least one blue micro light emitting diode disposed on the substrate.
  • the present invention also provides a micro light emitting diode display comprising: a substrate; and a plurality of display pixels arranged in an array arranged on the substrate;
  • Each display pixel includes at least one red sub-pixel
  • the red sub-pixel includes: at least one white micro-light emitting diode disposed on the substrate, and a red filter layer disposed on the white micro-light emitting diode;
  • Each display pixel further includes a green sub-pixel and a blue sub-pixel;
  • the green sub-pixel includes: at least one white micro light emitting diode disposed on the substrate, and a green filter layer disposed on the white micro light emitting diode;
  • the blue sub-pixel includes: at least one white micro light emitting diode disposed on the substrate, and a blue filter layer disposed on the white micro light emitting diode;
  • the red filter layer is further provided with a red photoluminescent material.
  • the present invention provides a micro light emitting diode display using a white micro light emitting diode plus a red filter layer, or a green micro light emitting diode plus a red photoluminescent layer, or blue
  • the color micro-light-emitting diode plus the red photo-emitting layer presents a red sub-pixel, and does not need to make a red micro-light-emitting diode, which reduces the difficulty in manufacturing the micro-light-emitting diode display, and can be enhanced by adding a filter layer on the micro-light-emitting diode.
  • the color purity of the micro-light-emitting diode display broadens the color gamut of the micro-light-emitting diode display and enhances the display effect of the micro-light-emitting diode display.
  • FIG. 1 is a structural view of a first embodiment of a micro light emitting diode display of the present invention
  • FIG. 2 is a structural view of a second embodiment of the micro light emitting diode display of the present invention.
  • FIG. 3 is a structural view of a third embodiment of a micro light emitting diode display of the present invention.
  • FIG. 4 is a structural view of a fourth embodiment of a micro light emitting diode display of the present invention.
  • Figure 5 is a structural view showing a fifth embodiment of the micro light emitting diode display of the present invention.
  • Fig. 6 is a structural view showing a sixth embodiment of the micro light emitting diode display of the present invention.
  • the invention provides a micro light emitting diode display using non-red micro light emitting diodes (such as white, blue, and green micro light emitting diodes) plus an auxiliary layer (such as a red filter layer and red photoluminescence).
  • non-red micro light emitting diodes such as white, blue, and green micro light emitting diodes
  • auxiliary layer such as a red filter layer and red photoluminescence.
  • the method of layer presents red sub-pixels to avoid making red micro-light-emitting diodes in the micro-light-emitting diode display, which reduces the difficulty in manufacturing the micro-light-emitting diode display.
  • the micro light emitting diode display adopts a white micro light emitting diode plus a red filter layer to present a red sub-pixel, and specifically includes: a substrate 1 And a plurality of display pixels 2 arranged in an array on the substrate 1;
  • Each display pixel 2 includes at least one red sub-pixel 21;
  • the red sub-pixel 21 includes at least one white micro-light-emitting diode 211 disposed on the substrate 1 and a red filter layer 212 disposed on the white micro-light-emitting diode 211.
  • each display pixel 2 further includes a green sub-pixel 22 and a blue sub-pixel 23, that is, each display pixel 2 is composed of a red sub-pixel 21, a green sub-pixel 22, and a blue sub-pixel.
  • the composition 23 displays a color image by three primary colors of red, green, and blue light emitted by a red sub-pixel 21, a green sub-pixel 22, and a blue sub-pixel 23.
  • the substrate 1 is further provided with a Thin Film Transistor (TFT) array for driving the light emitting diodes to emit light.
  • TFT Thin Film Transistor
  • the TFT array is an amorphous silicon TFT array or a low temperature polysilicon TFT array.
  • An oxide TFT array such as a silicon-based TFT array or an indium gallium zinc oxide thin film transistor array.
  • the green sub-pixel 22 includes: at least one white micro light emitting diode 211 disposed on the substrate 1 , and the white micro light emitting device a green filter layer 222 on the diode 211;
  • the blue sub-pixel 23 includes: at least one white micro-light-emitting diode 211 disposed on the substrate 1 and a blue filter disposed on the white micro-light-emitting diode 211 Light layer 232.
  • the red, green, and blue sub-pixels 21, 22, and 23 are all realized by the white micro-light-emitting diodes 211 from the white micro-light-emitting diodes 211 plus the filter layer, as compared with A micro-light-emitting diode display that uses only various color micro-light-emitting diodes to present sub-pixels of corresponding colors has a wider color gamut and a better display effect.
  • FIG. 2 is a second embodiment of the present invention.
  • the second embodiment and the first implementation The difference is that the blue sub-pixel 23 includes at least one blue micro-light-emitting diode 231 disposed on the substrate 1, that is, in the second embodiment, the blue sub-pixel 23 passes through the blue.
  • the micro-light-emitting diode 231 emits blue light directly, without a filter layer. The rest are the same as the first embodiment, and will not be described again here.
  • FIG. 3 is a third embodiment of the present invention.
  • the third embodiment is different from the first embodiment in that the green sub-pixel 22 includes at least one green color disposed on the substrate 1.
  • the micro-light-emitting diode 221, that is, in the third embodiment, the green sub-pixel 22 is presented by the green micro-light-emitting diode 221 directly emitting green light, which has no filter layer. The rest are the same as the first embodiment, and will not be described again here.
  • FIG. 4 is a fourth embodiment of the present invention.
  • the fourth embodiment is different from the second embodiment in that the green sub-pixel 22 includes at least one green color disposed on the substrate 1.
  • the micro-light-emitting diode 221, that is, in the fourth embodiment, the green sub-pixel 22 is directly emitted by the green micro-light-emitting diode 221, which has no filter layer, and the blue sub-pixel 23 thereof also passes through the blue
  • the color micro-light-emitting diode 231 directly emits blue light without a filter layer. The rest are the same as the second embodiment, and will not be described again here.
  • photoluminescent materials such as quantum dot materials may be added to the filter layers of the respective colors according to design requirements to further broaden the color of the micro light emitting diode display. area.
  • the illuminating color of the photo luminescent material corresponds to the color of the filter layer.
  • the red filter layer 212 is further provided with a red photo luminescent material
  • the blue filter layer 232 is provided with a blue light.
  • a green photoluminescent material is disposed in the luminescent material and the green filter layer 222.
  • the micro light emitting diode display adopts a blue or green micro light emitting diode plus a red photoluminescent layer to present a red sub-pixel, specifically
  • the method includes: a substrate 1 and a plurality of display pixels 2 arranged in an array on the substrate 1; each of the display pixels 2 includes at least one red sub-pixel 21; the red sub-pixel 21 includes: At least one blue micro light emitting diode 231 or at least one green micro light emitting diode 221 on the substrate 1 and a red photoluminescent layer 214 disposed on the blue micro light emitting diode 231 or the green micro light emitting diode 221 .
  • each display pixel 2 further includes a green sub-pixel 22, and a blue sub-pixel 23;
  • the green sub-pixel 22 includes: at least one green micro-light-emitting diode 221 disposed on the substrate 1;
  • the blue sub-pixel 23 includes at least one blue micro light-emitting diode 231 disposed on the substrate 1 .
  • the substrate 1 is further provided with a Thin Film Transistor (TFT) array for driving the light emitting diodes to emit light.
  • TFT Thin Film Transistor
  • the TFT array is an amorphous silicon TFT array or a low temperature polysilicon TFT array.
  • An oxide TFT array such as a silicon-based TFT array or an indium gallium zinc oxide thin film transistor array.
  • FIG. 5 is a fifth embodiment of the present invention.
  • a red sub-pixel 21 is presented by using a green micro-light-emitting diode 221 and a red photoluminescent layer 214.
  • FIG. 6 is a sixth embodiment of the present invention.
  • a red sub-pixel 21 is presented by using a blue micro-light-emitting diode 231 and a red photoluminescent layer 214.
  • the short-wave light emitted by the green micro-light-emitting diode 221 or the blue micro-light-emitting diode 231 excites the red photo-emitting layer 214 to emit red light, thereby presenting the red sub-pixel 21.
  • the above-mentioned white micro-light-emitting diode 211, green micro-light-emitting diode 221, and blue micro-light-emitting diode 231 can be prepared by a micro-transfer method, and the structure thereof specifically includes: a sapphire substrate and a sapphire substrate.
  • the upper second electrode, that is, the first electrode and the second electrode are located on the same plane, and the micro light emitting diode can be flipped onto the receiving substrate by microtransfer.
  • the first electrode is an alloy material of nickel and gold, and may also be replaced by an alloy material of palladium and gold, and the material of the N-type semiconductor layer and the P-type semiconductor layer may be selected from gallium nitride (GaN) and indium nitride.
  • GaN gallium nitride
  • InGaN zinc selenide
  • ZnSe gallium phosphide
  • AlGaInP aluminum indium gallium phosphide
  • the present invention provides a micro light emitting diode display using a white micro light emitting diode plus a red filter layer, or a green micro light emitting diode plus a red photoluminescent layer, or blue
  • the method of the micro light-emitting diode plus the red photoluminescent layer presents a red sub-pixel, and does not need to make a red micro-light-emitting diode, which reduces the difficulty in manufacturing the micro-light-emitting diode display, and can enhance the micro-light-emitting diode by adding a filter layer.
  • the color purity of the LED display broadens the color gamut of the micro LED display and enhances the display of the micro LED display.

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Abstract

一种微发光二极管显示器，所述微发光二极管显示器采用白色微发光二极管(211)加上红色滤光层(212)，或者绿色微发光二极管(221)加上红色光致发光层(214)，或者蓝色微发光二极管(231)加上红色光致发光层(214)的方法呈现红色子像素(21)，不需要制作红色微发光二极管，降低了微发光二极管显示器的制作难度，同时通过在微发光二极管上增加滤光层，能够增强微发光二极管显示器的颜色纯度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。

Description

微发光二极管显示器 技术领域
本发明涉及显示技术领域，尤其涉及一种微发光二极管显示器。
背景技术
平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
微发光二极管(Micro LED，μLED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，μLED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但μLED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
微转印(Micro Transfer Printing)技术是目前制备μLED显示装置的主流方法，具体制备过程为：首先在蓝宝石类基板生长出微发光二极管，然后通过激光剥离技术(Laser lift-off，LLO)将微发光二极管裸芯片(bare chip)从蓝宝石类基板上分离开，随后使用一个图案化的聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)传送头将微发光二极管裸芯片从蓝宝石类基板吸附起来，并将PDMS传送头与接收基板进行对位，随后将PDMS传送头所吸附的微发光二极管裸芯片贴附到接收基板上预设的位置，再剥离PDMS传送头，即可完成将微发光二极管裸芯片转移到接收基板上，进而制得μLED显示装置。
目前，蓝色微发光二极管和绿色微发光二极管的结构主要为蓝宝石基板的水平结构，而红色微发光二极管的结构主要为砷化镓(GaAs)基板的垂直结构，由于红色微发光二极管与蓝色微发光二极管或绿色微发光二极管在蓝宝石基板的生长方式存在区别，造成通过一般的倒装芯片(flip chip)技术来制备正负电极在同一向的红色微发光二极管存在困难。
另外，由于仅仅利用微发光二极管作为基本显示单元的微发光二极管显示器的色域很窄，显示效果较差，因此，为了优化微发光二极管显示器 的显示效果，需要对其色域进行拓宽。
发明内容
本发明的目的在于提供一种微发光二极管显示器，能够降低微发光二极管显示器制作难度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。
为实现上述目的，本发明首先提供一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；
每一个显示像素至少包括一红色子像素；
所述红色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的红色滤光层。
每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；
所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层。
每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；
所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。
每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；
所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层。
每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；
所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。
所述红色滤光层中还设有红色光致发光材料。
所述蓝色滤光层中还设有蓝色光致发光材料。
所述绿色滤光层中还设有绿色光致发光材料。
本发明还提供一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；
每一个显示像素至少包括一红色子像素；
所述红色子像素包括：设于所述基板上的至少一个蓝色微发光二极管 或至少一个绿色微发光二极管、以及设于所述蓝色微发光二极管或绿色微发光二极管上的红色光致发光层。
每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；
所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。
本发明还提供一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；
每一个显示像素至少包括一红色子像素；
所述红色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的红色滤光层；
其中，每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；
所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层；
其中，所述红色滤光层中还设有红色光致发光材料。
本发明的有益效果：本发明提供了一种微发光二极管显示器，所述微发光二极管显示器采用白色微发光二极管加上红色滤光层，或者绿色微发光二极管加上红色光致发光层，或者蓝色微发光二极管加上红色光致发光层的方法呈现红色子像素，不需要制作红色微发光二极管，降低了微发光二极管显示器的制作难度，同时通过在微发光二极管上增加滤光层，能够增强微发光二极管显示器的颜色纯度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的微发光二极管显示器的第一实施例的结构图；
图2为本发明的微发光二极管显示器的第二实施例的结构图；
图3为本发明的微发光二极管显示器的第三实施例的结构图；
图4为本发明的微发光二极管显示器的第四实施例的结构图；
图5为本发明的微发光二极管显示器的第五实施例的结构图；
图6为本发明的微发光二极管显示器的第六实施例的结构图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明提供一种微发光二极管显示器，该微发光二极管显示器采用非红色微发光二极管(如白色、蓝色、及绿色微发光二极管)加上辅助层(如红色滤光层、及红色光致发光层)的方法呈现红色子像素，以避免在微发光二极管显示器中制作红色微发光二极管，降低微发光二极管显示器的制作难度。
请参阅图1至图4，在本发明的第一至第四实施例中，所述微发光二极管显示器采用白色微发光二极管加上红色滤光层的方法呈现红色子像素，具体包括：基板1、以及设于所述基板1上阵列排布的多个显示像素2；
每一个显示像素2至少包括一红色子像素21；
所述红色子像素21包括：设于所述基板1上的至少一个白色微发光二极管211、以及设于所述白色微发光二极管211上的红色滤光层212。
另外，每一个显示像素2还包括一绿色子像素22、以及一蓝色子像素23，也即每一个显示像素2均由一红色子像素21、一绿色子像素22、以及一蓝色子像素23组成，通过一红色子像素21、一绿色子像素22、以及一蓝色子像素23发出的红光、绿光、及蓝光三原色呈现彩色图像。
具体地，所述基板1上还设有用于驱动微发光二极管发光的薄膜晶体管(Thin Film Transistor，TFT)阵列，可选的，所述TFT阵列为非晶硅TFT阵列、或低温多晶硅TFT阵列等硅基TFT阵列、或者氧化铟镓锌薄膜晶体管阵列等氧化物TFT阵列。
进一步地，请参阅图1，在本发明的第一实施例中，所述绿色子像素22包括：设于所述基板1上的至少一个白色微发光二极管211、以及设于所述白色微发光二极管211上的绿色滤光层222；所述蓝色子像素23包括：设于所述基板1上的至少一个白色微发光二极管211、以及设于所述白色微发光二极管211上的蓝色滤光层232。也即在本发明的第一实施例中红色、绿色、及蓝色子像素21、22、23均由白色微发光二极管211均由白色微发光二极管211加上滤光层实现，相比于于仅仅利用各种颜色微发光二极管来呈现相应颜色的子像素的微发光二极管显示器其色域更宽，显示效果更好。
请参阅图2，图2为本发明的第二实施例，该第二实施例中与第一实施 例的区别在于，所述蓝色子像素23包括：设于所述基板1上的至少一个蓝色微发光二极管231，也就是说在第二实施例中，蓝色子像素23是通过蓝色微发光二极管231直接发出蓝光来呈现的，没有滤光层。其余均与第一实施例相同，此处不再赘述。
请参阅图3，图3为本发明的第三实施例，该第三实施例中与第一实施例的区别在于，所述绿色子像素22包括：设于所述基板1上的至少一个绿色微发光二极管221，也就是说在第三实施例中，绿色子像素22是通过绿色微发光二极管221直接发出绿光来呈现的，其没有滤光层。其余均与第一实施例相同，此处不再赘述。
请参阅图4，图4为本发明的第四实施例，该第四实施例中与第二实施例的区别在于，所述绿色子像素22包括：设于所述基板1上的至少一个绿色微发光二极管221，也就是说在第四实施例中，绿色子像素22是通过绿色微发光二极管221直接发出绿光来呈现的，其没有滤光层，且其蓝色子像素23也是通过蓝色微发光二极管231直接发出蓝光来呈现的，没有滤光层。其余均与第二实施例相同，此处不再赘述。
需要说明的是，在本发明的第一至第四实施例中，根据设计需要，各个颜色的滤光层中均可以增加量子点材料等光致发光材料，以进一步拓宽微发光二极管显示器的色域。所述光致发光材料的发光颜色对应所述滤光层的颜色，例如所述红色滤光层212中还设有红色光致发光材料、所述蓝色滤光层232中设有蓝色光致发光材料、所述绿色滤光层222中设有绿色光致发光材料。
请参阅图5至图6，在本发明的第五至第六实施例中，所述微发光二极管显示器采用蓝色或绿色微发光二极管加上红色光致发光层的方法呈现红色子像素，具体包括：包括：基板1、以及设于所述基板1上阵列排布的多个显示像素2；每一个显示像素2至少包括一红色子像素21；所述红色子像素21包括：设于所述基板1上的至少一个蓝色微发光二极管231或至少一个绿色微发光二极管221、以及设于所述蓝色微发光二极管231或绿色微发光二极管221上的红色光致发光层214。
另外，每一个显示像素2还包括一绿色子像素22、以及一蓝色子像素23；
所述绿色子像素22包括：设于所述基板1上的至少一个绿色微发光二极管221；
所述蓝色子像素23包括：设于所述基板1上的至少一个蓝色微发光二极管231。
具体地，所述基板1上还设有用于驱动微发光二极管发光的薄膜晶体管(Thin Film Transistor，TFT)阵列，可选的，所述TFT阵列为非晶硅TFT阵列、或低温多晶硅TFT阵列等硅基TFT阵列、或者氧化铟镓锌薄膜晶体管阵列等氧化物TFT阵列。
具体地，请参阅图5，图5为本发明的第五实施例，在该第五实施例中采用绿色微发光二极管221加上红色光致发光层214的方法呈现红色子像素21。相应的，请参阅图6，图6为本发明的第六实施例，在该第六实施例中采用蓝色微发光二极管231加上红色光致发光层214的方法呈现红色子像素21。通过绿色微发光二极管221、或蓝色微发光二极管231发出的短波光激发红色光致发光层214发出红光，进而呈现红色子像素21。
值得一提的是，上述白色微发光二极管211、绿色微发光二极管221、及蓝色微发光二极管231均可以通过微转印的方法制备，其结构具体包括：蓝宝石衬底、设于蓝宝石衬底上的N型半导体层、设于所述N型半导体层上的多量子肼层、设于所述多量子肼层上的P型半导体层、设于所述P型半导体层上的接触层、设于所述接触上的电流扩散层、设于所述电流扩散层上的第一电极、以及包围所述第一电极的绝缘层、以及设于延伸至发光区域外的所述N型半导体层上的第二电极，也即所述第一电极和第二电极位于同一个平面，通过微转印可以将所述微发光二极管倒装至接收基板上。其中，第一电极为镍和金的合金材料，也可替换为钯和金的合金材料，所述N型半导体层和P型半导体层的材料可选择是氮化镓(GaN)、氮化铟镓(InGaN)、硒化锌(ZnSe)、磷化镓(GaP)、或磷化铝铟镓(AlGaInP)。
综上所述，本发明提供了一种微发光二极管显示器，所述微发光二极管显示器采用白色微发光二极管加上红色滤光层，或者绿色微发光二极管加上红色光致发光层，或者蓝色微发光二极管加上红色光致发光层的方法呈现红色子像素，不需要制作红色微发光二极管，降低了微发光二极管显示器的制作难度，同时通过在微发光二极管上增加滤光层，能够增强微发光二极管显示器的颜色纯度，拓宽微发光二极管显示器的色域，增强微发光二极管显示器的显示效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；
    每一个显示像素至少包括一红色子像素；
    所述红色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的红色滤光层。
  2. 如权利要求1所述的微发光二极管显示器，其中，每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
    所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；
    所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层。
  3. 如权利要求1所述的微发光二极管显示器，其中，每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
    所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；
    所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。
  4. 如权利要求1所述的微发光二极管显示器，其中，每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
    所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；
    所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层。
  5. 如权利要求1所述的微发光二极管显示器，其中，每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
    所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；
    所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。
  6. 如权利要求1所述的微发光二极管显示器，其中，所述红色滤光层中还设有红色光致发光材料。
  7. 如权利要求2所述的微发光二极管显示器，其中，所述基板为硅基的TFT阵列，或者氧化物的TFT阵列所述蓝色滤光层中还设有蓝色光致发光材料。
  8. 如权利要求2所述的微发光二极管显示器，其中，所述绿色滤光层 中还设有绿色光致发光材料。
  9. 一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；
    每一个显示像素至少包括一红色子像素；
    所述红色子像素包括：设于所述基板上的至少一个蓝色微发光二极管或至少一个绿色微发光二极管、以及设于所述蓝色微发光二极管或绿色微发光二极管上的红色光致发光层。
  10. 如权利要求9所述的微发光二极管显示器，其中，每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
    所述绿色子像素包括：设于所述基板上的至少一个绿色微发光二极管；
    所述蓝色子像素包括：设于所述基板上的至少一个蓝色微发光二极管。
  11. 一种微发光二极管显示器，包括：基板、以及设于所述基板上阵列排布的多个显示像素；
    每一个显示像素至少包括一红色子像素；
    所述红色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的红色滤光层；
    其中，每一个显示像素还包括一绿色子像素、以及一蓝色子像素；
    所述绿色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的绿色滤光层；
    所述蓝色子像素包括：设于所述基板上的至少一个白色微发光二极管、以及设于所述白色微发光二极管上的蓝色滤光层；
    其中，所述红色滤光层中还设有红色光致发光材料。
  12. 如权利要求11所述的微发光二极管显示器，其中，所述基板为硅基的TFT阵列，或者氧化物的TFT阵列；所述蓝色滤光层中还设有蓝色光致发光材料。
  13. 如权利要求11所述的微发光二极管显示器，其中，所述绿色滤光层中还设有绿色光致发光材料。
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