WO2017215016A1 - Titanium film application and silicon-based optical waveguide with the same - Google Patents
Titanium film application and silicon-based optical waveguide with the same Download PDFInfo
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- WO2017215016A1 WO2017215016A1 PCT/CN2016/086679 CN2016086679W WO2017215016A1 WO 2017215016 A1 WO2017215016 A1 WO 2017215016A1 CN 2016086679 W CN2016086679 W CN 2016086679W WO 2017215016 A1 WO2017215016 A1 WO 2017215016A1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- the present invention relates to the field of optics, and more particularly to the use of a titanium film and a silicon-based optical waveguide using the same.
- Anti-reflection film which is used to reduce the reflection of the surface of optical components, is an important optical film. To date, its total production far exceeds that of other types of films. At present, anti-reflection film is still an important research field in optical film technology. One of the research focuses is to find new materials, design new structures, and improve the preparation process to achieve broadband, wide angle, polarization-independent, ultra-thin effects.
- Near-infrared is an electromagnetic wave between visible light and mid-infrared.
- the American Society for Testing and Materials defines the near-infrared spectral region as a region from 780 nm to 2526 nm.
- Near-infrared is an important electromagnetic band.
- Today's near-infrared spectroscopy has been widely used in petrochemical, pharmaceutical, food processing, agriculture and optical fiber communication. Therefore, the design of NIR anti-reflective film with ideal effect is in practical application. is very important.
- the existing common anti-reflection films mainly include three types: one is a single-layer dielectric anti-reflection film, the other is a multi-layer dielectric anti-reflection film, and the third is a graded-index anti-reflection film.
- Single-layer dielectric anti-reflection film The general single-layer dielectric anti-reflection film is based on the principle of interference cancellation of reflected waves. As shown in Figure 1, light waves are incident on the air from the dielectric. If there is no anti-reflection film, the light waves will be in the dielectric and air. In the reflection of the interface, in order to eliminate the reflected wave, it is necessary to insert an anti-reflection film between the dielectric and the air (Fig. 1). At this time, the reflected wave at the interface between the dielectric and the anti-reflection film and the anti-reflection film and The reflected waves on the air interface interfere with each other, thereby achieving an anti-reflection effect.
- the advantage of the anti-reflection film is that the design is simple and easy to prepare, and the disadvantage is that the required optical thickness is at least One quarter wavelength, and the working bandwidth is narrow.
- Multilayer dielectric anti-reflection film In order to overcome the problem of narrow bandwidth of single-layer dielectric anti-reflection film, a multilayer dielectric can be used instead of the original one.
- the principle is multi-interference cancellation in multilayer dielectrics.
- the broadband anti-reflection effect can be achieved by the selection of each layer of dielectric material and the optimization of the thickness, but such a design tends to be more complicated and increases the preparation difficulty and cost.
- Gradient index refraction film The surface structure is designed to continuously transition the refractive index of the dielectric to the refractive index of the air.
- the antireflection film is composed of a dielectric having a pointed surface, the gradual structure A continuous transition can be formed between the refractive index of the dielectric and the refractive index of the air, thereby reducing or even eliminating reflected waves.
- the anti-reflection film has the advantages of widening and wide angle anti-reflection effect, and the disadvantage is that the thickness is often large, and the actual preparation is difficult and the cost is high.
- the main disadvantages of the prior art are that the bandwidth is narrow, the thickness of the anti-reflection film is large, and the design is complicated.
- the single-layer dielectric anti-reflection film is simple to prepare, the thickness required is large, and the broadband anti-reflection effect cannot be achieved; the multilayer dielectric anti-reflection film and the graded-index anti-reflection film can achieve the broadband anti-reflection effect.
- the design is more complicated and the thickness is relatively large.
- an object of the present invention is to provide a broadband (1000 nm to 2200 nm), wide angle, ultra-thin near-infrared anti-reflection film, which can be used not only to eliminate reflected waves at the interface between dielectric and air, but also to use The reflection wave on the end face of the silicon-based optical waveguide is eliminated.
- the present invention provides an application of a titanium film for reducing or even completely eliminating reflection of electromagnetic waves in the near-infrared band.
- the thickness of the titanium film is 15 to 25 nm.
- the present invention also provides a silicon-based optical waveguide in which an end surface of the silicon-based optical waveguide is covered with the above-described titanium thin film.
- the silicon-based optical waveguide includes two silicon dioxide layers and a silicon layer sandwiched between the two silicon dioxide layers, the titanium thin film covering the silicon layer in contact with air in the silicon-based optical waveguide On the end face.
- the titanium film is used as an anti-reflection film for electromagnetic waves in the near-infrared band, and has a wide band (1000 nm to 2200 nm), a wide angle, and an ultra-thin property, and is simple in preparation, low in preparation cost, and ultra-thin.
- the utility model can reduce the weight of the anti-reduction device, save the cost of the anti-reverse device, and is convenient to carry; in addition, to achieve the anti-reflection effect on different dielectric materials, only the thickness of the titanium film needs to be adjusted, and has wide application;
- the silicon-based optical waveguide of the present invention is covered with a titanium film, which greatly reduces the reflection of the end face of the silicon-based optical waveguide, so that the standing wave in the silicon-based optical waveguide is also greatly weakened, and the reflected wave is greatly reduced.
- the influence of other devices ensures the stability of the optical path system.
- FIG. 1 is a schematic view of a single-layer dielectric anti-reflection film in the background art
- FIG. 2 is a schematic view of a graded index retroreflective film in the background art
- FIG 3 is a schematic view of the present invention for eliminating reflected waves at a dielectric and air interface based on an ultra-thin titanium film (titanium anti-reflection film);
- Figure 4 is a graph showing the reflectance as a function of wavelength of light waves in the present invention.
- Figure 5 is a schematic diagram of a silicon-based optical waveguide of the present invention and a numerical simulation of an electric field amplitude distribution diagram, wherein Figure (a) shows no addition or subtraction of the anti-reflection film, and Figure (b) adds 24 nm of titanium to the interface between the silicon and the air in the waveguide. film.
- the reflection coefficient (ratio of the reflected and incident electric fields) of the transverse electric wave is
- the reflected wave on the interface is eliminated by adding an ultra-thin titanium (Ti) film to the interface between the dielectric and the air, as shown in FIG.
- Ti ultra-thin titanium
- ⁇ 0 is the wavelength of the incident light wave in the air.
- the reflection coefficient r is calculated by the formula (1), and the thickness of the titanium film is obtained by combining the refractive index of the titanium and bringing it into the formula (2).
- the formula (2) also shows that to achieve the effect of reducing the different dielectrics, it is only necessary to adjust the thickness of the titanium film.
- a wide-band (1000 nm to 2200 nm), wide-angle, ultra-thin near-infrared anti-reflection film-titanium film can be designed.
- the ultra-thinness of the titanium film contributes to saving raw materials, and is expected to reduce the manufacturing cost, reduce the weight of the device, and improve portability.
- it is only necessary to adjust the thickness of the titanium film which makes it widely used in practical photovoltaic devices.
- the dielectric material is silicon (Si), its refractive index is 3.5, and light waves are incident from the silicon into the air.
- the gray curve in Fig. 4 shows the reflectance as a function of the incident wavelength when there is no anti-reflection film, wherein the solid line and the broken line correspond to the case of normal incidence and oblique incidence (incident angle of 10°, transverse electric wave), respectively.
- the reflectivity is relatively large, about 30% to 40%.
- the thickness of the titanium film is about 20 nm for normal incidence.
- the dark gray curve in Fig. 4 shows the reflectance of the titanium film with a 20 nm addition as a function of the incident wavelength, where the solid and dashed lines correspond to normal incidence and oblique incidence (incident angle 10°, transverse electric wave), respectively. situation.
- the results show that the reflectance after adding a 20 nm titanium film does not exceed 1% in the wavelength range of 1000 nm to 2200 nm, and the effect of the subtraction is hardly affected by the incident angle.
- FIG. 5 (a) is a schematic view of a silicon-based optical waveguide composed of two layers of silicon dioxide (SiO 2 ) and central silicon. Due to the sudden change of the refractive index, the light wave will reflect at the interface between silicon and air, and the reflected wave will return to the entire optical path, which may affect other devices in the optical path and cause system disorder.
- the right side of Fig. 5(a) shows the electric field amplitude distribution of the numerical simulation. The wavelength of the light wave is taken as 1550 nm, and the electric field amplitude of the incident wave is taken as 1 V/m. The simulation results show that there is a strong reflection at the interface between silicon and air, which forms a strong standing wave in the waveguide.
- a 24 nm titanium film was added to the interface between silicon and air, as shown in the left figure of Fig. 5(b).
- the electric field amplitude distribution diagram given in the right figure of Fig. 5(b) shows that the reflected wave on the end face is greatly attenuated, which makes the standing wave in the waveguide correspondingly weaker.
- the invention is applied to two kinds of media to reduce the reflection of electromagnetic waves in the near-infrared band, and is used as an anti-reflection film to make the titanium film have a new use in the field of optics.
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Abstract
Provided are an Titanium film application and a silicon-based optical waveguide with the same. The titanium film is used for reducing and even completely eliminating reflection of an electromagnetic wave of a near-infrared band. According to the invention, the titanium film that is used as an anti-reflecting film for the electromagnetic wave of a near-infrared band has properties of broad band of 1000nm to 2200nm, wide angle, and ultra-thin; and the preparation method of the film is simple and the preparation cost is low. Because of the ultra-thin property of the film, the weight of the anti-reflection device can be reduced and the cost of the anti-reflection device is saved; and the device can be carried conveniently. Besides, in order to realize anti-reflection effects for different dielectric substances, only the thickness of the titanium film needs to be adjusted, so that the film can be applied widely. In addition, because a titanium film covers the end surface of a silicon-based optical waveguide, reflection of the end surface of the silicon-based optical waveguide can be reduced substantially and thus the standing wave in the silicon-based optical waveguide can be reduced substantially, so that the influence of the reflecting waves on other devices in the optical path can be reduced substantially and stability of the optical path system is guaranteed.
Description
本发明涉及光学领域，尤其涉及一种钛薄膜的应用以及使用该钛薄膜的硅基光波导。The present invention relates to the field of optics, and more particularly to the use of a titanium film and a silicon-based optical waveguide using the same.
减反膜，用于减少光学原件表面的反射，是非常重要的光学薄膜，至今，其生产总量远远超过其它类型的薄膜。目前，减反膜仍是光学薄膜技术中重要的研究领域，研究重点之一是寻找新材料、设计新结构、改进制备工艺，使其获得宽带、宽角度、偏振无关、超薄等效果。Anti-reflection film, which is used to reduce the reflection of the surface of optical components, is an important optical film. To date, its total production far exceeds that of other types of films. At present, anti-reflection film is still an important research field in optical film technology. One of the research focuses is to find new materials, design new structures, and improve the preparation process to achieve broadband, wide angle, polarization-independent, ultra-thin effects.
近红外是介于可见光和中红外之间的电磁波，美国材料检测协会将近红外光谱区定义为780nm～2526nm的区域。近红外是重要的电磁波段，当今近红外光谱分析已经在石油化工、制药、食品加工、农业和光纤通讯等领域得到了广泛的应用，因此设计具有理想效果的近红外抗反膜在实际应用中是非常重要的。Near-infrared is an electromagnetic wave between visible light and mid-infrared. The American Society for Testing and Materials defines the near-infrared spectral region as a region from 780 nm to 2526 nm. Near-infrared is an important electromagnetic band. Today's near-infrared spectroscopy has been widely used in petrochemical, pharmaceutical, food processing, agriculture and optical fiber communication. Therefore, the design of NIR anti-reflective film with ideal effect is in practical application. is very important.
现有的常见的减反膜主要包括三种：一是单层电介质减反膜，二是多层电介质减反膜，三是渐变折射率减反膜。The existing common anti-reflection films mainly include three types: one is a single-layer dielectric anti-reflection film, the other is a multi-layer dielectric anti-reflection film, and the third is a graded-index anti-reflection film.
单层电介质减反膜：一般单层电介质减反膜是基于反射波的干涉相消原理，如图1所示，光波从电介质中入射到空气，如果没有减反膜，光波会在电介质和空气的界面上发生反射，为了消除该反射波，需要在电介质和空气之间插入一层减反膜(图1)，这时，在电介质和减反膜界面上的反射波与在减反膜和空气界面上的反射波干涉相消，从而实现减反效果。Single-layer dielectric anti-reflection film: The general single-layer dielectric anti-reflection film is based on the principle of interference cancellation of reflected waves. As shown in Figure 1, light waves are incident on the air from the dielectric. If there is no anti-reflection film, the light waves will be in the dielectric and air. In the reflection of the interface, in order to eliminate the reflected wave, it is necessary to insert an anti-reflection film between the dielectric and the air (Fig. 1). At this time, the reflected wave at the interface between the dielectric and the anti-reflection film and the anti-reflection film and The reflected waves on the air interface interfere with each other, thereby achieving an anti-reflection effect.
该减反膜的优点是设计简单且容易制备，而缺点是所需的光学厚度至少为
四分之一波长，且工作带宽较窄。The advantage of the anti-reflection film is that the design is simple and easy to prepare, and the disadvantage is that the required optical thickness is at least
One quarter wavelength, and the working bandwidth is narrow.
多层电介质减反膜：为了克服单层电介质减反膜的带宽较窄的问题，可以用多层电介质来替代原先的一层电介质。其原理是多层电介质中的多重干涉相消。通过对每一层电介质材料的选择以及厚度的优化，可以实现宽带的减反效果，但这样的设计往往比复杂，且增大了制备难度和成本。Multilayer dielectric anti-reflection film: In order to overcome the problem of narrow bandwidth of single-layer dielectric anti-reflection film, a multilayer dielectric can be used instead of the original one. The principle is multi-interference cancellation in multilayer dielectrics. The broadband anti-reflection effect can be achieved by the selection of each layer of dielectric material and the optimization of the thickness, but such a design tends to be more complicated and increases the preparation difficulty and cost.
渐变折射率减反膜：通过设计表面结构来让电介质的折射率连续过渡到空气的折射率，比如，在图2中，减反膜是由具有尖劈状表面的电介质构成的，该渐变结构能够在电介质的折射率和空气的折射率之间形成连续的过渡，从而减少甚至消除反射波。Gradient index refraction film: The surface structure is designed to continuously transition the refractive index of the dielectric to the refractive index of the air. For example, in Fig. 2, the antireflection film is composed of a dielectric having a pointed surface, the gradual structure A continuous transition can be formed between the refractive index of the dielectric and the refractive index of the air, thereby reducing or even eliminating reflected waves.
该减反膜的优点是具有宽带和宽角度的减反效果，而缺点是厚度往往比较大，且实际制备难度较大，成本较高。The anti-reflection film has the advantages of widening and wide angle anti-reflection effect, and the disadvantage is that the thickness is often large, and the actual preparation is difficult and the cost is high.
现有技术的主要缺点在于：带宽较窄、减反膜的厚度较大、设计复杂。如，单层电介质减反膜虽然制备简单，但所需厚度较大，且不能实现宽带的减反效果；多层电介质减反膜和渐变折射率减反膜虽然都可以实现宽带的减反效果，但设计比较复杂，且厚度相对较大。The main disadvantages of the prior art are that the bandwidth is narrow, the thickness of the anti-reflection film is large, and the design is complicated. For example, although the single-layer dielectric anti-reflection film is simple to prepare, the thickness required is large, and the broadband anti-reflection effect cannot be achieved; the multilayer dielectric anti-reflection film and the graded-index anti-reflection film can achieve the broadband anti-reflection effect. However, the design is more complicated and the thickness is relatively large.
发明内容Summary of the invention
为解决上述技术问题，本发明的目的是提供一种宽带(1000nm～2200nm)、宽角度、超薄的近红外减反膜，不仅可以用于消除电介质与空气界面上的反射波，还可以用于消除硅基光波导端面上的反射波。In order to solve the above technical problems, an object of the present invention is to provide a broadband (1000 nm to 2200 nm), wide angle, ultra-thin near-infrared anti-reflection film, which can be used not only to eliminate reflected waves at the interface between dielectric and air, but also to use The reflection wave on the end face of the silicon-based optical waveguide is eliminated.
本发明提供一种钛薄膜的应用，用于减少甚至完全消除近红外波段的电磁波的反射。The present invention provides an application of a titanium film for reducing or even completely eliminating reflection of electromagnetic waves in the near-infrared band.
进一步的，所述钛薄膜的厚度取15～25nm。
Further, the thickness of the titanium film is 15 to 25 nm.
本发明还提供一种硅基光波导，在所述硅基光波导的端面覆盖有上述的钛薄膜。The present invention also provides a silicon-based optical waveguide in which an end surface of the silicon-based optical waveguide is covered with the above-described titanium thin film.
进一步的，所述硅基光波导包括两二氧化硅层和夹持在两所述二氧化硅层中间的硅层，所述钛薄膜覆盖在所述硅基光波导中硅层与空气接触的端面上。Further, the silicon-based optical waveguide includes two silicon dioxide layers and a silicon layer sandwiched between the two silicon dioxide layers, the titanium thin film covering the silicon layer in contact with air in the silicon-based optical waveguide On the end face.
借由上述方案，本发明将钛薄膜作为近红外波段的电磁波的减反膜，具有宽带(1000nm～2200nm)、宽角度、超薄的性质，同时制备简单，制备成本较低，因其超薄性可以减轻减反装置的重量，节省减反装置的成本，且携带方便；此外，要实现对不同电介质材料的减反效果，只需要调节钛薄膜的厚度即可，具有广泛的应用；另外，本发明的硅基光波导由于其端面覆盖了一层钛薄膜，大大减弱了硅基光波导端面的反射，从而使得硅基光波导中的驻波也大大变弱，大大降低了反射波对光路中其他器件的影响，确保光路体系稳定。According to the above scheme, the titanium film is used as an anti-reflection film for electromagnetic waves in the near-infrared band, and has a wide band (1000 nm to 2200 nm), a wide angle, and an ultra-thin property, and is simple in preparation, low in preparation cost, and ultra-thin. The utility model can reduce the weight of the anti-reduction device, save the cost of the anti-reverse device, and is convenient to carry; in addition, to achieve the anti-reflection effect on different dielectric materials, only the thickness of the titanium film needs to be adjusted, and has wide application; The silicon-based optical waveguide of the present invention is covered with a titanium film, which greatly reduces the reflection of the end face of the silicon-based optical waveguide, so that the standing wave in the silicon-based optical waveguide is also greatly weakened, and the reflected wave is greatly reduced. The influence of other devices ensures the stability of the optical path system.
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，并可依照说明书的内容予以实施，以下以本发明的较佳实施例并配合附图详细说明如后。The above description is only an overview of the technical solutions of the present invention, and the technical means of the present invention can be more clearly understood and can be implemented in accordance with the contents of the specification. Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
图1是背景技术中单层电介质减反膜示意图；1 is a schematic view of a single-layer dielectric anti-reflection film in the background art;
图2是背景技术中渐变折射率减反膜示意图；2 is a schematic view of a graded index retroreflective film in the background art;
图3是本发明中基于超薄钛薄膜(钛减反膜)来消除电介质和空气界面上反射波的示意图；3 is a schematic view of the present invention for eliminating reflected waves at a dielectric and air interface based on an ultra-thin titanium film (titanium anti-reflection film);
图4是本发明中反射率随光波波长的变化曲线；Figure 4 is a graph showing the reflectance as a function of wavelength of light waves in the present invention;
图5是本发明中硅基光波导的示意图和数值模拟的电场振幅分布图，其中图(a)没有加减反膜，图(b)在波导中硅与空气的界面上加了24nm的钛薄膜。
Figure 5 is a schematic diagram of a silicon-based optical waveguide of the present invention and a numerical simulation of an electric field amplitude distribution diagram, wherein Figure (a) shows no addition or subtraction of the anti-reflection film, and Figure (b) adds 24 nm of titanium to the interface between the silicon and the air in the waveguide. film.
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。The specific embodiments of the present invention are further described in detail below with reference to the drawings and embodiments. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
在没有减反膜的情况下，电磁波以入射角θ从折射率为n的电介质中入射到空气时，在界面上会发生反射。根据菲涅尔公式可得，横电波(电场沿y方向)的反射系数(反射和入射电场的比值)为，In the absence of the anti-reflection film, when the electromagnetic wave is incident on the air from the dielectric having the refractive index n at the incident angle θ, reflection occurs at the interface. According to the Fresnel formula, the reflection coefficient (ratio of the reflected and incident electric fields) of the transverse electric wave (the electric field along the y direction) is
通过在电介质和空气的界面上加入一层超薄的钛(Ti)薄膜来消除界面上的反射波，如图3所示。通过计算电介质中的总反射系数，并令其为零，可算钛薄膜的折射率nTi和其厚度d的关系为，The reflected wave on the interface is eliminated by adding an ultra-thin titanium (Ti) film to the interface between the dielectric and the air, as shown in FIG. By calculating the total reflection coefficient in the dielectric and making it zero, the relationship between the refractive index n Ti of the titanium film and its thickness d can be calculated as
其中，λ0为入射光波在空气中的波长。Where λ 0 is the wavelength of the incident light wave in the air.
需要注意的是，公式(2)的成立需要建立在条件d＜＜λ0的成立之上，即钛薄膜的厚度远远小于入射波的波长。It should be noted that the formula (2) needs to be established above the condition d<<λ 0 , that is, the thickness of the titanium film is much smaller than the wavelength of the incident wave.
当电介质材料确定后，通过公式(1)计算出反射系数r，结合钛的折射率并带入公式(2)可得钛薄膜的厚度。此外，公式(2)还表明，要实现对不同电介质的减反效果，只需调节钛薄膜的厚度即可。After the dielectric material is determined, the reflection coefficient r is calculated by the formula (1), and the thickness of the titanium film is obtained by combining the refractive index of the titanium and bringing it into the formula (2). In addition, the formula (2) also shows that to achieve the effect of reducing the different dielectrics, it is only necessary to adjust the thickness of the titanium film.
根据本发明，可以设计出宽带(1000nm～2200nm)、宽角度、超薄的近红外减反膜—钛薄膜。该钛薄膜的超薄性有助于节省原材料，并有望降低制备成本以及减轻装置的重量，提高便携性。此外，要实现对不同电介质材料的减反效果，只需要调节钛薄膜的厚度即可，这使其在实际的光电设备中具有广泛的应用。
According to the present invention, a wide-band (1000 nm to 2200 nm), wide-angle, ultra-thin near-infrared anti-reflection film-titanium film can be designed. The ultra-thinness of the titanium film contributes to saving raw materials, and is expected to reduce the manufacturing cost, reduce the weight of the device, and improve portability. In addition, in order to achieve the effect of reducing the effect of different dielectric materials, it is only necessary to adjust the thickness of the titanium film, which makes it widely used in practical photovoltaic devices.
在数值计算中，取电介质材料为硅(Si)，其折射率为3.5，且设光波从硅入射到空气中。图4中灰色曲线所示的是没有减反膜时的反射率随入射波长的变化曲线，其中实线和虚线分别对应于正入射和斜入射(入射角10°，横电波)的情形。很明显，如果没有减反膜，反射率比较大，大约为30％～40％。In the numerical calculation, the dielectric material is silicon (Si), its refractive index is 3.5, and light waves are incident from the silicon into the air. The gray curve in Fig. 4 shows the reflectance as a function of the incident wavelength when there is no anti-reflection film, wherein the solid line and the broken line correspond to the case of normal incidence and oblique incidence (incident angle of 10°, transverse electric wave), respectively. Obviously, if there is no anti-reflection film, the reflectivity is relatively large, about 30% to 40%.
而如果在硅和空气之间加入钛薄膜可以消除界面反射，通过公式(1)和(2)，可得对于正入射的情况下，钛薄膜的厚度约为20nm。图4中深灰色曲线所示的是加了20nm的钛薄膜后的反射率随入射波长的变化曲线，其中实线和虚线分别对应于正入射和斜入射(入射角10°，横电波)的情形。结果表明，在加上20nm的钛薄膜后的反射率在1000nm到2200nm的波长范围内都不超过1％，且减反效果几乎不受入射角的影响。However, if a titanium film is added between silicon and air to eliminate interface reflection, by the formulas (1) and (2), the thickness of the titanium film is about 20 nm for normal incidence. The dark gray curve in Fig. 4 shows the reflectance of the titanium film with a 20 nm addition as a function of the incident wavelength, where the solid and dashed lines correspond to normal incidence and oblique incidence (incident angle 10°, transverse electric wave), respectively. situation. The results show that the reflectance after adding a 20 nm titanium film does not exceed 1% in the wavelength range of 1000 nm to 2200 nm, and the effect of the subtraction is hardly affected by the incident angle.
这些结果表明，钛薄膜的三个重要特性，即宽带、宽角度和超薄。These results show that the three important properties of titanium film are broadband, wide angle and ultra-thin.
此外，该钛薄膜还可以用于消除光波在硅基光波导的端面上的反射。图5(a)左图所示的是由上下两层二氧化硅(SiO2)和中心的硅组成的一种硅基光波导的示意图。由于折射率发生突变，光波会在硅和空气界面上发生反射，该反射波会重新回到整个光路中，从而可能会影响到光路中的其它器件，并引起体系的紊乱。图5(a)右图所示的是数值模拟的电场振幅分布图，光波波长取为1550nm，且入射波的电场振幅取为1V/m。模拟结果表明，在硅和空气界面上有较强的反射，从而在波导中形成了很强的驻波。In addition, the titanium film can also be used to eliminate reflection of light waves on the end faces of the silicon-based optical waveguide. Figure 5 (a) is a schematic view of a silicon-based optical waveguide composed of two layers of silicon dioxide (SiO 2 ) and central silicon. Due to the sudden change of the refractive index, the light wave will reflect at the interface between silicon and air, and the reflected wave will return to the entire optical path, which may affect other devices in the optical path and cause system disorder. The right side of Fig. 5(a) shows the electric field amplitude distribution of the numerical simulation. The wavelength of the light wave is taken as 1550 nm, and the electric field amplitude of the incident wave is taken as 1 V/m. The simulation results show that there is a strong reflection at the interface between silicon and air, which forms a strong standing wave in the waveguide.
为了消除反射，在硅和空气的界面上加了24nm的钛薄膜，如图5(b)左图所示。图5(b)右图给出的电场振幅分布图表明，端面上的反射波被大大减弱了，这使得波导中的驻波也相应变弱了。In order to eliminate the reflection, a 24 nm titanium film was added to the interface between silicon and air, as shown in the left figure of Fig. 5(b). The electric field amplitude distribution diagram given in the right figure of Fig. 5(b) shows that the reflected wave on the end face is greatly attenuated, which makes the standing wave in the waveguide correspondingly weaker.
本发明根据钛薄膜本身的性能，将其应用于两种介质中以减少近红外波段的电磁波的反射，作为减反膜使用，使钛薄膜在光学领域具有新的用途。
According to the performance of the titanium film itself, the invention is applied to two kinds of media to reduce the reflection of electromagnetic waves in the near-infrared band, and is used as an anti-reflection film to make the titanium film have a new use in the field of optics.
以上所述仅是本发明的优选实施方式，并不用于限制本发明，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和变型，这些改进和变型也应视为本发明的保护范围。
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention. It should be noted that those skilled in the art can make some improvements without departing from the technical principles of the present invention. And modifications and variations are also considered to be within the scope of the invention.
Claims (4)
- 一种钛薄膜的应用，其特征在于：用于减少甚至完全消除近红外波段的电磁波的反射。An application of a titanium film for reducing or even completely eliminating reflection of electromagnetic waves in the near-infrared band.
- 根据权利要求1所述的钛薄膜的应用，其特征在于：所述钛薄膜的厚度取15～25nm。The use of the titanium thin film according to claim 1, wherein the titanium thin film has a thickness of 15 to 25 nm.
- 一种硅基光波导，其特征在于：所述硅基光波导的端面覆盖有权利要求1或2所述的钛薄膜。A silicon-based optical waveguide characterized in that an end surface of the silicon-based optical waveguide is covered with the titanium thin film according to claim 1 or 2.
- 根据权利要求3所述的硅基光波导，其特征在于：所述硅基光波导包括两二氧化硅层和夹持在两所述二氧化硅层中间的硅层，所述钛薄膜覆盖在所述硅基光波导中硅层与空气接触的端面上。 The silicon-based optical waveguide according to claim 3, wherein said silicon-based optical waveguide comprises two silicon dioxide layers and a silicon layer sandwiched between said two silicon dioxide layers, said titanium thin film being covered The end face of the silicon-based optical waveguide in contact with the silicon layer.
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