CN101894740A - Method for settling anti-reflection film - Google Patents
Method for settling anti-reflection film Download PDFInfo
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- CN101894740A CN101894740A CN2009101433856A CN200910143385A CN101894740A CN 101894740 A CN101894740 A CN 101894740A CN 2009101433856 A CN2009101433856 A CN 2009101433856A CN 200910143385 A CN200910143385 A CN 200910143385A CN 101894740 A CN101894740 A CN 101894740A
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- titanium nitride
- titanium
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Abstract
The invention provides a method for settling titanium and titanium nitride. Aiming at the prior art, the method comprises the step of settling a barrier layer, a layer of titanium (Ti) film and a layer of titanium nitride (TiNx) film on a metal conductive layer sequentially. Compared with the prior art, the method can effectively solve the problem that the Ti film in an anti-reflection film and aluminum in the metal conductive layer are directly contacted with each other, so that the condition that TiAl3 is generated in the subsequent processing can be avoided; the electrical property of a wafer is improved; the rate of finished products is increased; and the process is simpler and more reasonable.
Description
Technical field
The present invention relates to integrated circuit fabrication process in a kind of semiconductor applications, be meant the deposition process of a kind of anti-reflective film in the manufacture process especially.
Background technology
In integrated circuit fabrication process, be mostly to adopt aluminium (Al) as metal conducting layer, on metal conducting layer, deposit one deck anti-reflective film then, to reduce the standing wave effect in the follow-up alignment procedure.Based on consideration, make anti-reflecting layer and adopt titanium (Ti)/titanium nitride (TiN more for electrical characteristics and follow-up manufacturing process
x).
Traditional anti-reflecting layer manufacture, its flow process promptly have the film formed metal conducting layer 2 of aluminium earlier as shown in Figure 1 on substrate 1 surface; Deposition one deck titanium film 3 in a vacuum chamber deposits one deck titanium nitride film 4 again in the another one vacuum chamber then.This duplex allows pure titanium directly be deposited on the aluminium film, and in follow-up high temperature process, titanium is easy to form at contact-making surface with reactive aluminum a kind of compound TiAl of high value
3Thereby, have influence on the electrical of wafer, cause yield of products to reduce.
Summary of the invention
At above-mentioned defective of the prior art and problem, the objective of the invention is to propose a kind of deposition process of anti-reflective film, in the time of can solving in the existing integrated circuits manufacturing process with titanium and titanium nitride as anti-reflective film, can in follow-up processing procedure, produce TiAl
3Problem, thereby improve the rate of finished products of product.
In order to achieve the above object, the present invention proposes a kind of deposition process of anti-reflective film, comprising:
On metal conducting layer, deposit a barrier layer, one deck titanium Ti film, one deck titanium nitride TiN successively
xFilm.
Preferred as technique scheme, described barrier layer is titanium nitride TiN
xFilm.
Preferred as technique scheme carries out titanium nitride TiN in same vacuum chamber
xThe deposition of film, titanium Ti film.
Preferred as technique scheme, described method also comprises:
Utilize nitrogen N at described vacuum chamber
2Carry out pre-burning, so that become the titanium nitride environment in this vacuum chamber.
The present invention proposes the deposition process of a kind of titanium and titanium nitride, at comprising in the prior art: on metal conducting layer, deposit a barrier layer, one deck titanium Ti film, one deck titanium nitride TiN successively
xFilm.The present invention's prior art of comparing can solve effectively that the aluminium of titanium film and metal conductor layer directly goes out in the anti-reflective film, thereby can prevent to generate TiAl in the follow-up processing procedure
3Situation, improve wafer electrically, improve rate of finished products, and technology advantages of simple more.
Description of drawings
Fig. 1 carries out the step schematic diagram of anti-reflective film deposition for existing method;
Fig. 2 carries out the step schematic diagram of anti-reflective film deposition for the method that adopts the present invention to propose.
Embodiment
The present invention will be further described with reference to the accompanying drawings below.
The present invention proposes a kind of deposition process of anti-reflective film, its flow process comprises as shown in Figure 2: deposit a barrier layer 3, one deck titanium Ti film 4, one deck titanium nitride TiN on the metal conducting layer 2 of substrate 1 successively
xFilm 5.Like this can be as shown in Figure 2, form a barrier layer 3 on metal conductor layer 2 surfaces, can prevent that titanium film from directly contacting aluminium, to prevent that titanium electrically descends with the wafer that the aluminium reflection causes in follow-up processing procedure, the problem of yields decline.
In the above-described embodiments, described barrier layer is titanium nitride TiN
xFilm.Titanium nitride film can not influence follow-up processing procedure, and the technology of deposited titanium nitride film is very ripe in the prior art, adopts titanium nitride very convenient as barrier layer.
In the above-described embodiments, can deposit one deck titanium nitride TiN respectively at the metallic conductor laminar surface at same vacuum chamber
xFilm, one deck titanium Ti film, one deck titanium nitride TiN
xFilm.Help continuous production like this: promptly first product final step is to carry out the titanium nitride film deposition, has been the environment of titanium nitride in finishing the final vacuum storehouse, can directly carry out the deposition of ground floor titanium nitride barrier layer on the surface of second product.Can simplify flow process like this, save cost.
In the above-described embodiments, also comprise: utilize nitrogen N at described vacuum chamber
2Carry out pre-burning, so that become the titanium nitride environment in this vacuum chamber.Can when depositing for the first time, realize the nitrogen oxide environment like this at vacuum chamber.
Certainly, adopt above-mentioned optimal technical scheme just for the ease of understanding to illustrating that the present invention carries out, the present invention also can have other embodiment, protection scope of the present invention is not limited to this.Under the situation that does not deviate from spirit of the present invention and essence thereof, the person of ordinary skill in the field works as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.
Claims (5)
1. the deposition process of an anti-reflective film comprises:
On metal conducting layer, deposit a barrier layer, one deck titanium Ti film, one deck titanium nitride TiN successively
xFilm.
2. the deposition process of anti-reflective film according to claim 1 is characterized in that, described barrier layer is titanium nitride TiN
xFilm.
3. the deposition process of anti-reflective film according to claim 1 is characterized in that, carries out barrier layer, titanium nitride TiN in same vacuum chamber
xThe deposition of film, titanium Ti film.
4. the deposition process of anti-reflective film according to claim 2 is characterized in that, carries out titanium nitride TiN in same vacuum chamber
xFilm, titanium Ti film, titanium nitride TiN
xThe deposition of film.
5. according to the deposition process of claim 3 or 4 described anti-reflective films, it is characterized in that described method also comprises:
Utilize nitrogen N at described vacuum chamber
2Carry out pre-burning, so that become the titanium nitride environment in this vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101433856A CN101894740A (en) | 2009-05-22 | 2009-05-22 | Method for settling anti-reflection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101433856A CN101894740A (en) | 2009-05-22 | 2009-05-22 | Method for settling anti-reflection film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101894740A true CN101894740A (en) | 2010-11-24 |
Family
ID=43103895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101433856A Pending CN101894740A (en) | 2009-05-22 | 2009-05-22 | Method for settling anti-reflection film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101894740A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103557801A (en) * | 2013-11-13 | 2014-02-05 | 上海华力微电子有限公司 | Method for improving reliability of product passivation layer film thickness measurement value |
| CN105954823A (en) * | 2016-06-14 | 2016-09-21 | 苏州大学张家港工业技术研究院 | Titanium film application and silicon-based optical waveguide with the same |
-
2009
- 2009-05-22 CN CN2009101433856A patent/CN101894740A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103557801A (en) * | 2013-11-13 | 2014-02-05 | 上海华力微电子有限公司 | Method for improving reliability of product passivation layer film thickness measurement value |
| CN105954823A (en) * | 2016-06-14 | 2016-09-21 | 苏州大学张家港工业技术研究院 | Titanium film application and silicon-based optical waveguide with the same |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20101124 |