WO2017210731A1 - Procédé pour le traitement de matériau de silicium - Google Patents

Procédé pour le traitement de matériau de silicium Download PDF

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Publication number
WO2017210731A1
WO2017210731A1 PCT/AU2017/050560 AU2017050560W WO2017210731A1 WO 2017210731 A1 WO2017210731 A1 WO 2017210731A1 AU 2017050560 W AU2017050560 W AU 2017050560W WO 2017210731 A1 WO2017210731 A1 WO 2017210731A1
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WO
WIPO (PCT)
Prior art keywords
substrate
silicon
annealing
temperature
silicon material
Prior art date
Application number
PCT/AU2017/050560
Other languages
English (en)
Inventor
Stuart Ross Wenham
Alison Ciesla
Brett Jason HALLAM
Catherine Emily CHAN
Chee Mun CHONG
Ran Chen
Malcolm David ABBOTT
David Neil Payne
Original Assignee
Newsouth Innovations Pty Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from AU2016902198A external-priority patent/AU2016902198A0/en
Application filed by Newsouth Innovations Pty Limited filed Critical Newsouth Innovations Pty Limited
Priority to AU2017276802A priority Critical patent/AU2017276802A1/en
Priority to SG11201810055PA priority patent/SG11201810055PA/en
Priority to KR1020197000342A priority patent/KR20190015529A/ko
Priority to US16/307,562 priority patent/US10461212B2/en
Priority to EP17809450.4A priority patent/EP3465777A4/fr
Priority to CN201780033426.9A priority patent/CN109196665A/zh
Publication of WO2017210731A1 publication Critical patent/WO2017210731A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention generally relates to methods for manufacturing photovoltaic devices and methods for stabilising the performance of photovoltaic devices .
  • Silicon is the main semiconductor material used to fabricate today's commercial solar cells. The majority of commercial solar cells are fabricated from a
  • a p-n junction is formed in the silicon wafer by, for example, diffusing n-type atoms into a p-type silicon wafer.
  • a large proportion of solar cells are fabricated using a boron-doped wafer (p-type) .
  • p-type boron-doped wafer
  • the performance of a solar cell degrades when it is exposed to radiation or more broadly, subject to carrier injection.
  • LID Degradation
  • CID Carrier Induced Degradation
  • PERC solar cells are becoming increasingly popular because they deliver good potential for high- volume manufacturing at low cost and increased efficiency compared to conventional technologies.
  • PERC solar cells are largely fabricated using multi-crystalline silicon (mc-Si) wafers. In the case of mc-Si wafers, the lifetime of charge carriers degrades significantly over long time scales due to CID. CID reduces the efficiency of PERC solar cells and it is known to occur much faster with increasing illumination intensities or at elevated temperatures .
  • the present invention provides a method for manufacturing a photovoltaic device, the method comprising the steps of: providing a substrate that comprises a silicon p n junction; annealing the substrate at a temperature between 500°C and 700°C in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into silicon material of the silicon p-n junction ; and exposing the substrate to electromagnetic radiation while the substrate is kept at a temperature between 150°C and 400°C in a manner such that photons with an energy higher than that of a bandgap of the silicon material are provided at a radiation intensity of at least 20 mW/cm 2 and an excess of minority carriers is created in the silicon material; wherein, during the steps of annealing the substrate and exposing the substrate to electromagnetic radiation, electrically active defects in the silicon material are passivated.
  • invention provides a method for manufacturing a
  • the method comprising the steps of: providing a substrate that comprises a silicon p- n junction; annealing the substrate at a temperature between 300°C and 700°C in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into silicon material of the p-n junction; exposing the substrate to electromagnetic radiation while the substrate is kept at a temperature between 150°C and 400°C in a manner such that photons with an energy higher than that of a bandgap of the silicon are provided at a radiation intensity of at least 20 mW/cm 2 and an excess of minority carriers is created in the silicon material; and further annealing the substrate at a temperature between 200°C and 500°C for a second predetermined period of time to reduce contact resistance between the metallic electrodes and the silicon material; wherein, during the steps of annealing the substrate and exposing the substrate to electromagnetic radiation, electrically active defects in the silicon material are passivated.
  • the first period of time is between 1 second and 5 minutes.
  • the present invention provides a method for manufacturing a photovoltaic device, the method comprising the steps of: providing a substrate that comprises a silicon p- n junction; annealing the substrate at a temperature between 700°C and 900°C in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into silicon material of the silicon p-n junction; annealing the substrate at a temperature between 600°C and 700°C for a further predetermined period of time; and exposing the substrate to electromagnetic radiation while the substrate is kept at a temperature between 150°C and 400°C in a manner such that photons with an energy higher than that of a bandgap of the silicon are provided at a radiation intensity of at least 20 mW/cm 2 and an excess of minority carriers is created in the silicon material; wherein, during the steps of annealing the substrate and exposing the substrate to electromagnetic radiation, electrically active defects in the silicon material are passivated.
  • invention provides a method for manufacturing a
  • the method comprising the steps of: providing a substrate that comprises a silicon p n junction; annealing the substrate at a temperature between
  • the first period of time is between 1 second and 5 seconds.
  • the method further comprises the step of forming a plurality of metallic electrodes on a surface of the substrate.
  • the metallic electrodes may be fired during the step of annealing the substrate so that an electrical contact is formed between the electrodes and the silicon p-n junction.
  • the device is exposed to radiation with energy sufficient to generate electron pairs within the silicon during one or more of the annealing steps. This may facilitate, for example, control of the charge state of hydrogen atoms in the device.
  • the amount of hydrogen atoms in a given charge state may be controlled by varying one or more parameters of the radiation during exposure.
  • the substrate during exposure to the electromagnetic radiation may be between 150°C and 250°C.
  • the substrate may be exposed to electromagnetic radiation for 10 seconds to 20 minutes .
  • the performance of the photovoltaic device deteriorates after the devices are deployed due to CID.
  • the loss in performance is partially recovered after several hundreds of hours of exposure of the device to high temperatures and radiation. This can equate to 5 to 20 years in the field depending on
  • Embodiments of the methods described herein allow keeping stable performance throughout the operational life of the devices.
  • the open circuit voltage may decrease less than 1% relative and the efficiency less than 5% relative .
  • the second period of time is between 10 seconds and 5 minutes and the further period of time is between 10 seconds and 20 minutes.
  • the method comprises the step of providing the source of hydrogen atoms in the photovoltaic device.
  • the source of hydrogen may be provided in a layer of the photovoltaic device and diffuse through other areas of the device during annealing, or the source of hydrogen may be provided in the annealing atmosphere.
  • the present invention provides a silicon photovoltaic device manufactured in accordance with the method of any one of the aspects above .
  • the present invention provides a method for stabilising the performance of a silicon screen printed photovoltaic device, the method comprising the steps of: providing a silicon screen printed photovoltaic device; annealing the screen printed photovoltaic device at a temperature between 500°C and 700°C for a
  • Advantageous embodiments of the methods disclosed herein provide a series of manufacturing conditions which allow to mitigate the effect of CID on the performance of photovoltaic devices.
  • embodiments allow stabilizing the performance of industrially-produced HP mc-Si PERC cells that have been fired at CID-activating temperatures ( ⁇ 740- 800°C) , which is the industrial standard for silver contact formation.
  • Figures 1 to 4 show flow diagrams outlining steps for manufacturing a photovoltaic device in accordance with embodiments ;
  • Figure 5 shows a flow diagram outlining the steps for manufacturing a mc-Si PERC solar cell using a method in accordance with embodiments and a schematic diagram of a mc-Si PERC solar cell;
  • Figure 6 shows a plot with the evolution of the open circuit voltage for mc-Si PERC manufactured using a method in accordance with embodiments.
  • FIG 7 shows a flow diagram outlining steps for
  • Embodiments of the present invention generally relate to methods for manufacturing photovoltaic devices and methods for stabilising the performance of photovoltaic devices.
  • the photovoltaic device can be any type of solar cell device for example: a screen printed solar cell, non-screen printed solar cell, PERC cell or plated solar cell where the substrate can be a p-type, n-type, mono- or multi- crystalline silicon substrate.
  • metallic electrodes are formed on the surface of the substrate at step 104. This step is optional and may be performed at a later stage, for example after the annealing step (106) or after radiation exposure (step 108).
  • the structure comprising the substrate and the metallic electrodes undergoes annealing at a moderate temperature, between 500°C to 700°C, in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into the silicon.
  • the hydrogen source can be provided in one or more layers of the structure, or through an external hydrogen source.
  • the step of annealing the structure is performed so that an electrical contact is formed between the electrodes and the silicon p-n junction.
  • This process is generally known as firing.
  • the highest temperature used during this step is lower than the highest temperature commonly used by the manufacturers for 'firing' .
  • This lower firing temperature allows a reduction of the effect of CID on the device performance.
  • the above annealed structure undergoes exposure to electromagnetic radiation.
  • the temperature of the structure throughout this step is maintained between 150°C - 400°C.
  • the radiation contains energy higher than 20 mW/cm 2 at wavelengths that can be absorbed by silicon material.
  • the high intensity of the radiation allows heating of the silicon material and is absorbed by the silicon. Therefore, the radiation creates an excess of minority carriers in the silicon. Heating could be provided by another source, in addition to light, in particular for the lower illumination intensities.
  • FIG 2 there is shown a flow diagram 200 with steps required to manufacture a photovoltaic device.
  • the process followed in diagram 200 is similar to the process described in figure 1.
  • step 206 where a broader temperature range may be used (300°C to 700°C); and step 210 where an additional annealing is introduced .
  • the additional annealing step 210 allows reducing the contact resistance between the electrodes and the silicon substrate and is performed at a temperature between 200 ° C and 500 ° C.
  • step 306 the structure is annealed at a temperature between 700°C and 900 °C for a very short period of time.
  • this annealing step can be used to fire the metal contacts and has a duration in the order of a few seconds.
  • step 308 a further annealing is performed at a lower temperature between 600°C and 700°C for a period of time similar to the first annealing step.
  • step 308 is a 'refiring' step.
  • steps 306 and 308 may be performed as a single annealing process with a specific temperature profile (high temperature for firing, lower temperature for refiring) .
  • the structure is exposed to electromagnetic radiation at a temperature is kept between 150°C and 400°C to facilitate passivation of defects by controlling the charge state of hydrogen atoms in the device. During step 310 excess carriers are created in the silicon.
  • photovoltaic device using a similar process as shown in diagram 300.
  • One of the differences between process 300 and process 400 is that at step 408, a broader range of temperatures, 250°C to 700°C, may be used for annealing.
  • an additional annealing step, 412 is introduced. The additional annealing step allows a reduction in the contact resistance between the electrodes and the silicon substrate and is performed at a
  • FIG. 5 there is shown a flow diagram 500 outlining steps for manufacturing a screen printed PERC solar cell in accordance with embodiments (a) and a schematic representation of a PERC solar cell (b) .
  • a textured p-type multi-crystalline silicon substrate 552 is provided. Subsequently, a phosphorus diffusion is used to form heavily phosphorus doped regions 554 near the silicon surfaces.
  • Dielectric layers 557 are also formed on the rear surface. These may consist of a thin layer of aluminium oxide, formed by techniques such as atomic layer deposition or PECVD, and a capping hydrogen-containing dielectric layer of silicon nitride, silicon oxide, silicon oxy-nitride or silicon carbide.
  • a laser process is used to define contact openings 559 and locally open dielectric layers 557 on the rear surface of the device.
  • a metal containing layer 560 is deposited onto the rear surface of the device, for example, by screen printing aluminium.
  • Metal contacts 558 are also formed on regions 556, for example by screen printing silver .
  • the structure is heated to a temperature between 700°C and 900°C to fire the metal contacts. This may happen in conjunction with exposure of the structure to radiation. Step 506 allows hydrogen atoms to penetrate into the silicon.
  • a refiring is performed at a temperature between 600°C and 700°C.
  • the structure is exposed to electromagnetic radiation at a temperature between 150°C and 400°C.
  • the radiation contains energy higher than 20 mW/cm 2 at wavelengths that can be absorbed by silicon material.
  • Heating could be provided by the absorbed radiation or by another source, in addition to the radiation, in
  • Plot 600 shows that there was little to no degradation in Voc observed with the combined re-fire and additional laser stabilization step (602) after 480 hours of light soaking (-0.1% relative compared to initial value before

Abstract

La présente invention concerne des procédés pour fabriquer un dispositif photovoltaïque qui comprend une séquence d'étapes de recuit et une exposition à un rayonnement électromagnétique pendant un recuit qui permettent de passiver les défauts électriquement actifs et de stabiliser les performances du dispositif photovoltaïque.
PCT/AU2017/050560 2016-06-06 2017-06-06 Procédé pour le traitement de matériau de silicium WO2017210731A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AU2017276802A AU2017276802A1 (en) 2016-06-06 2017-06-06 A method for processing silicon material
SG11201810055PA SG11201810055PA (en) 2016-06-06 2017-06-06 A method for processing silicon material
KR1020197000342A KR20190015529A (ko) 2016-06-06 2017-06-06 실리콘 소재의 처리 방법
US16/307,562 US10461212B2 (en) 2016-06-06 2017-06-06 Method for processing silicon material
EP17809450.4A EP3465777A4 (fr) 2016-06-06 2017-06-06 Procédé pour le traitement de matériau de silicium
CN201780033426.9A CN109196665A (zh) 2016-06-06 2017-06-06 用于处理硅材料的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AU2016902198A AU2016902198A0 (en) 2016-06-06 A method for processing silicon material
AU2016902198 2016-06-06

Publications (1)

Publication Number Publication Date
WO2017210731A1 true WO2017210731A1 (fr) 2017-12-14

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PCT/AU2017/050560 WO2017210731A1 (fr) 2016-06-06 2017-06-06 Procédé pour le traitement de matériau de silicium

Country Status (8)

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US (1) US10461212B2 (fr)
EP (1) EP3465777A4 (fr)
KR (1) KR20190015529A (fr)
CN (1) CN109196665A (fr)
AU (1) AU2017276802A1 (fr)
SG (1) SG11201810055PA (fr)
TW (1) TW201818560A (fr)
WO (1) WO2017210731A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110965044A (zh) * 2019-09-09 2020-04-07 浙江爱旭太阳能科技有限公司 降低perc电池电致衰减的介质钝化膜及其制备方法
CN111081815A (zh) * 2019-12-05 2020-04-28 广东爱旭科技有限公司 一种降低掺硼perc电池载流子衰减的方法、设备及电池

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200361782A1 (en) * 2019-05-16 2020-11-19 Sciosense B.V. Photo-annealing in Metal Oxide Sensors
CN111162143B (zh) * 2019-12-25 2022-10-18 广东爱旭科技有限公司 一种高效率perc太阳能电池及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080075840A1 (en) * 2006-09-21 2008-03-27 Commissariat A L'energie Atomique Method for annealing photovoltaic cells
US20090253225A1 (en) * 2008-04-03 2009-10-08 Commissariat A L' Energie Atomique Method of processing a semiconductor substrate by thermal activation of light elements
WO2013173867A1 (fr) * 2012-05-21 2013-11-28 Newsouth Innovations Pty Limited Hydrogénation avancée de cellules solaires au silicium
US20150357510A1 (en) * 2014-06-09 2015-12-10 Lg Electronics Inc. Method for manufacturing solar cell

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304509A (en) * 1992-08-24 1994-04-19 Midwest Research Institute Back-side hydrogenation technique for defect passivation in silicon solar cells
DE102006012920B3 (de) * 2006-03-21 2008-01-24 Universität Konstanz Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
US8778448B2 (en) * 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
WO2014206504A1 (fr) * 2013-06-26 2014-12-31 Universität Konstanz Procédé et dispositif permettant de produire un élément photovoltaïque présentant un rendement stabilisé
KR102230171B1 (ko) * 2013-07-26 2021-03-22 뉴사우스 이노베이션즈 피티와이 리미티드 실리콘에서의 열처리

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080075840A1 (en) * 2006-09-21 2008-03-27 Commissariat A L'energie Atomique Method for annealing photovoltaic cells
US20090253225A1 (en) * 2008-04-03 2009-10-08 Commissariat A L' Energie Atomique Method of processing a semiconductor substrate by thermal activation of light elements
WO2013173867A1 (fr) * 2012-05-21 2013-11-28 Newsouth Innovations Pty Limited Hydrogénation avancée de cellules solaires au silicium
US20150357510A1 (en) * 2014-06-09 2015-12-10 Lg Electronics Inc. Method for manufacturing solar cell

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of EP3465777A4 *
YANG, L. ET AL.: "Investigating the Effect of Thermal Annealing Process on the Photovoltaic Performance of the Graphene-Silicon Solar Cell", INTERNATIONAL JOURNAL OF PHOTOENERGY, 2015, pages 1 - 6, XP055396855 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110965044A (zh) * 2019-09-09 2020-04-07 浙江爱旭太阳能科技有限公司 降低perc电池电致衰减的介质钝化膜及其制备方法
CN111081815A (zh) * 2019-12-05 2020-04-28 广东爱旭科技有限公司 一种降低掺硼perc电池载流子衰减的方法、设备及电池

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Publication number Publication date
EP3465777A1 (fr) 2019-04-10
SG11201810055PA (en) 2018-12-28
TW201818560A (zh) 2018-05-16
KR20190015529A (ko) 2019-02-13
CN109196665A (zh) 2019-01-11
EP3465777A4 (fr) 2019-05-08
AU2017276802A1 (en) 2018-11-29
US10461212B2 (en) 2019-10-29
US20190252572A1 (en) 2019-08-15

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