WO2017206415A1 - Electrophoresis system and method applicable to ion-sensitive field effect sensor - Google Patents

Electrophoresis system and method applicable to ion-sensitive field effect sensor Download PDF

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WO2017206415A1
WO2017206415A1 PCT/CN2016/102072 CN2016102072W WO2017206415A1 WO 2017206415 A1 WO2017206415 A1 WO 2017206415A1 CN 2016102072 W CN2016102072 W CN 2016102072W WO 2017206415 A1 WO2017206415 A1 WO 2017206415A1
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electrode
voltage
isfet
biosensor
electrophoresis
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PCT/CN2016/102072
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French (fr)
Chinese (zh)
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薛李荣
孙伟
朱春蓉
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张家港万众一芯生物科技有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416Systems
    • G01N27/447Systems using electrophoresis
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/416Systems
    • G01N27/447Systems using electrophoresis
    • G01N27/44756Apparatus specially adapted therefor
    • G01N27/44791Microapparatus

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  • the present invention relates to the field of microfluidic electrophoresis, and more particularly to a method of concentrating particles and molecules to be detected by means of electrophoresis, and a sensor electrophoresis system for increasing the signal-to-noise ratio of an ion field effect sensor.
  • a biochemical sensor is an analytical device that detects the type and concentration of targets such as particles and biomolecules.
  • targets such as particles and biomolecules.
  • systems and methods that often use biosensors to quantify molecules in a target analyte sample are the cornerstone of modern analytical measurements.
  • ISFETs ion sensitive field effect transistors
  • ISFET semiconductor gene sequencing technology developed by Ion Torrent Company of the United States has made great breakthroughs, achieving high-throughput parallel sequencing through large-scale integrated sensor circuit chips, which greatly reduces the price of gene sequencing and sequencing time, and improves the accuracy. More than 99.6%.
  • a new generation of gene sequencing technology is revolutionizing the life sciences and the medical world.
  • the sensor's ability to capture target particles/molecules is greatly reduced due to the large reduction of the microfluidic cavity above the sensor.
  • the volume of the liquid sample that can be detected by the nanometer-scale sensor becomes small, so that the number of particles/molecules to be tested in the electrolyte becomes small and difficult to be detected, resulting in a significant decrease in the signal-to-noise ratio of the sensor.
  • the microfluidic cavity above the sensor reaches the micro-nano scale, the molecular diffusion velocity is also greatly reduced (the diffusion rate is proportional to the fourth power of the microfluidic opening).
  • the present invention discloses a design and a method for using an auxiliary electrophoresis system suitable for a nano-scale ion field effect sensor to greatly increase the directional movement of particles/molecules in the microfluid to the sensor surface, thereby improving the sensor.
  • Signal-to-noise ratio, sensitivity, and detection speed are examples of the present invention.
  • the ion field effect sensor assisted electrophoresis system includes one or more microfluidic cavities, one or more biosensors in the microfluidic cavity, and one or more metal electrodes around the biosensor.
  • the biosensor and the metal electrode are connected by an electrolyte; an external circuit applies a voltage between the biosensor and the metal electrode;
  • the biosensor is an ion sensitive field effect transistor ISFET, an exposed silicon channel ISFET, a junctionless ion sensitive field effect transistor, or a nanoscale ion sensitive field effect transistor;
  • the material of the metal electrode is one or alloy of aluminum, copper, silicide, silver, gold, platinum.
  • the metal electrode is a plate electrode, and the plate electrode is disposed above the microfluidic cavity of the ISFET, and a direct current voltage or an alternating voltage is applied to the plate electrode through an external circuit.
  • a flat-plate electrode is placed over the ISFET of the large-scale array.
  • the metal electrode is a ring electrode, which is a loop coil composed of one or more coils, and the width of the coil is 20 nm to 100 ⁇ m; preferably 1-10 coils.
  • a ring electrode is disposed at the inlet of the microfluidic cavity of the ISFET
  • the ring electrode is a closed loop coil or a ring electrode having an opening
  • the ring electrode is exposed to the electrolyte or buried in the dielectric insulating material
  • a ring electrode is placed at the entrance of the microfluidic cavity of each ISFET of the large scale array, and the connected ring electrodes are connected to each other to form a multi-grid metal grid and apply a voltage to the metal grid.
  • the metal electrode is a U-shaped electrode:
  • a U-shaped electrode is added to one side of the ISFET exposed gate plate, and a DC voltage or an AC voltage is applied to the U-shaped electrode and the exposed gate plate of the ISFET through an external circuit.
  • the metal electrode is a double electrode composed of a rectangular parallelepiped electrode and a U-shaped electrode:
  • the double electrode composed of the rectangular parallelepiped electrode and the U-shaped electrode surrounds the exposed gate plate of the ISFET, and a DC voltage is applied to the rectangular parallelepiped electrode and the U-shaped electrode through an external circuit. Or AC voltage.
  • the metal electrode is a micro-nano electrode having a width of 20 nm to 200 ⁇ m.
  • An electrophoresis method suitable for an ion-sensitive field effect sensor characterized in that an external circuit applies a voltage between a biosensor and a metal electrode to form a potential difference, and electrophoresis is driven on the target molecule to concentrate it on the surface of the sensor for a period of time. After the voltage is interrupted, the sensor is activated for detection.
  • a method of voltage application is at the gate and electrode of a conventional metal gate ion sensitive field effect sensor Voltage is applied between them.
  • Another method when the channel of the ion-sensitive field effect sensor is directly exposed to the solution (exposing the channel sensor) is to apply a voltage between the exposed channel of the sensor and the electrode.
  • the ion-sensitive field effect sensor can also be at the drain (or source) and electrode of the sensor if its channel portion is exposed to the solution. A voltage is applied between them.
  • the applied voltage is 10mV to 20V, the time is 10ms to 1000s, and the frequency is less than or equal to 50MHz;
  • the AC voltage frequency is 50 Hz to 5000 Hz, and the molecule to be tested is concentrated to the ISFET by the dielectric electrophoresis principle DEP.
  • the frequency of the alternating voltage is set at 500 Hz to 100000 Hz to realize the ACOX phenomenon of the alternating current permeation flow;
  • the frequency of the alternating voltage is set in the range of 100000 Hz to 50 MHz, and the electrophoresis ACET is realized by the principle of alternating current electrothermal to concentrate the molecule to be tested.
  • the microfluid diffusion distance L is 1 to 100 ⁇ m.
  • the metal electrode can be used as an electronic heating wire to heat the electrolyte in the microfluidic cavity by supplying a large current to the metal electrode, and the temperature is controlled at 20 ° C to 100 ° C to achieve the separation effect between the target molecule and the probe, so that the biosensor can It is reused.
  • the ion field effect sensor electrophoresis system of the present invention has the advantages of forming an electric field after applying a voltage to the electrode, driving the target cell, or moving the particle/molecule to the sensor test area to realize concentration of the particle to be tested/
  • the role of the molecule to improve the sensitivity and accuracy of the detection; the electrode also has the function of heating, can control the amplification or exfoliation of the DNA molecule, realize flexible gene detection, and can realize the repeated use of the chip and reduce the detection cost.
  • PCR on-chip DNA amplification
  • FIG. 1 is a diagram showing a plate electrode and an exposed silicon channel ISFET forming electrophoresis system according to an embodiment of the present invention.
  • FIG. 2(a) is a side view showing a ring electrode and an exposed silicon channel ISFET forming an electrophoresis system according to an embodiment of the present invention
  • FIG. 2(b) is a top plan view of a ring electrode and an exposed silicon channel ISFET forming electrophoresis system in accordance with an embodiment of the present invention.
  • 3(a) is a side view of a ring electrode (with an opening) and a conventional metal gate ISFET forming an electrophoresis system according to an embodiment of the present invention
  • Figure 3 (b) is a top plan view of a ring electrode (with openings) and a conventional metal gate ISFET forming an electrophoresis system in accordance with an embodiment of the present invention.
  • FIG. 4(a) is a side view of an electrophoresis system formed by a buried ring electrode and a conventional metal gate ISFET of an embodiment of the present invention
  • FIG. 4(b) is a top plan view of an electrophoresis system formed by a buried ring electrode and a conventional metal gate ISFET of an embodiment of the present invention.
  • Figure 5 shows a plate electrode and ISFET large scale array forming electrophoresis system in accordance with an embodiment of the present invention.
  • Figure 6 (a) is a side view of a ring-shaped electrode and ISFET large-scale array forming electrophoresis system according to an embodiment of the present invention
  • Figure 6 (b) is a top plan view of a ring electrode and ISFET large scale array forming electrophoresis system in accordance with an embodiment of the present invention.
  • Figure 7 (a) is a side view of a two-electrode and ISFET forming a horizontal direction electrophoresis system according to an embodiment of the present invention
  • Figure 7 (b) is a plan view of a two-electrode and ISFET forming a horizontal electrophoresis system in accordance with an embodiment of the present invention.
  • FIG. 8(a) is a side view of a horizontal electrode electrophoresis system formed by a dual electrode and an exposed silicon channel ISFET according to an embodiment of the present invention
  • Figure 8 (b) is a top plan view of a two-electrode and exposed silicon channel ISFET forming a horizontal direction electrophoresis system in accordance with an embodiment of the present invention.
  • Figure 9 (a) is a side view of a single-electrode and exposed silicon channel ISFET forming a horizontal direction electrophoresis system in accordance with an embodiment of the present invention
  • Figure 9 (b) is a top plan view of a single-electrode and exposed silicon channel ISFET forming a horizontal electrophoresis system in accordance with an embodiment of the present invention.
  • the invention is illustrated in the structure of an ion sensitive field effect sensor as shown in FIG.
  • the channel of this ion-sensitive field effect sensor is directly exposed to the solution, referred to as the exposed channel ISFET sensor.
  • this ISFET can be implemented in a standard CMOS process using a polysilicon layer as the channel for the ISFET. And the solution cavity is realized above the channel.
  • Another method is to use the upper single crystal silicon as a channel on a silicon wafer on an SOI (silicon-on-insulator) insulating film to realize the exposed silicon channel ISFET shown in FIG.
  • Such an ISFET structure can also use other materials as channels, such as Ge ⁇ , SiGe, graphene film, MoS2 film, WSe2 film, and the like.
  • a plate electrode is added at a position above the microfluidic cavity of the exposed channel ISFET, and a DC voltage or an AC voltage having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the plate electrode through an external circuit.
  • the voltage applied to the plate electrode by the external circuit is greater than the voltage of the ISFET gate, forming a potential difference, driving the target molecule to electrophoresis, concentrating it onto the sensing surface, improving the sensitivity of the sensor detection, accuracy, and reducing the detection time (mainly waiting) Measuring the diffusion time of the molecule).
  • the electrophoresis voltage is interrupted to prevent the voltage from affecting the detection result, and the sensor is activated for detection.
  • the electrolyte can be heated in the microfluidic cavity by supplying a large current to the electrode, and the temperature is controlled at 20 ° C to 100 ° C to achieve the separation effect of the target molecule and the probe, so that the biosensor can be reused.
  • the ion field effect sensor assisted electrophoresis system successfully solves the problem that the biosensor is difficult to detect low concentration ions/molecules and cannot be reused.
  • on-chip DNA amplification (PCR) can be achieved by repeated heating and cooling to increase the number of DNA samples to be tested and improve detection sensitivity.
  • the method of using the voltage and amplitude of the electrophoresis setting for different test electrolytes is described in detail.
  • the DC voltage is a DC electrophoresis principle (DCEK)
  • DCEK DC electrophoresis principle
  • the required voltage is about 1 volt.
  • an AC voltage or AC-DC combination can be used.
  • the following AC electrophoresis principles are used.
  • the specific implementation of the AC electrophoresis principle is further subdivided into three cases, both of which require the plate electrode shown in FIG. 1 and the gate of the ISFET shown in FIG. 1 to form an asymmetric solid structure, thereby achieving uneven distribution as shown in FIG. Electric field.
  • a relatively low frequency AC voltage such as 50 Hz to 5000 Hz
  • DEP Dielectrophoresis Principle
  • Gate surface This design is especially suitable for electrophoretic concentration of relatively large organic molecules such as cells, DNA, proteins, and the like.
  • the voltage required for DEP electrophoresis is generally large, at least a few volts.
  • the AC voltage is high to achieve AC electroosmotic flow (ACEO).
  • ACEO also requires an asymmetric electric field distribution with a smaller voltage amplitude than DEP.
  • the frequency is generally set at several hundred Hz to 10WHz.
  • ACEO is suitable for liquids with lower salt concentration. If the concentration of the particles to be tested is high and the conductivity is high (for example, above 10 mS), ACEO will no longer be effective. At this time, the voltage frequency is again increased to a range of 10 WHz to 50 MHz, and electrophoresis (ACET) is performed by an alternating current electrothermal principle to concentrate the molecules to be tested.
  • a ring electrode is added at the entrance of the microfluidic cavity exposing the silicon channel ISFET, and a DC voltage or AC having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the ring electrode through an external circuit. Voltage.
  • Other specific embodiments are the same as in the first embodiment.
  • the ring electrode of Example 2 can conveniently and accurately control the size of the microfluidic diffusion L (the size of the previous design L is 8 to 12 microns), thereby controlling the electrode pair micro
  • the magnitude of the voltage applied to the solution in the fluid chamber prevents the water electrolysis from being generated due to excessive voltage, which has an effect on the detection result.
  • the ion field effect sensor assisted electrophoresis system efficiently concentrates the ions/molecules to be measured, and does not affect the detection result, that is, high accuracy.
  • a ring electrode is also added at the entrance of the microfluidic cavity of the conventional metal gate ISFET, and a DC voltage having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the ring electrode through an external circuit. Or AC voltage.
  • the external circuit applies a voltage to the ring electrode that is greater than the voltage of the metal gate, forms a potential difference, and electrophoretically drives the target molecule to concentrate it onto the sensing surface.
  • Other specific embodiments are the same as in the first embodiment.
  • the ion field effect sensor-assisted electrophoresis system can be applied not only to exposed silicon channel ISFETs, but also to conventional metal gate ISFETs.
  • This conventional ISFET structure also includes the case where the polysilicon gate is directly exposed to the solution, and is also applicable to the electrophoresis system of the present invention.
  • a ring electrode is also added at the entrance of the microfluidic cavity of a conventional metal gate ISFET.
  • this example buryes the ring electrode in a dielectric insulating material such as silicon oxide (which may also be alumina, titanium oxide, etc.).
  • a dielectric insulating material such as silicon oxide (which may also be alumina, titanium oxide, etc.).
  • the high concentration of salt at more than 5 mmol/L
  • the metal material of the ring electrode is easily dissolved in the solution.
  • the salt solution having a higher concentration has a higher conductivity and is easy to shield the electric field generated by the ring electrode. Since the ring electrode is not exposed to the solution, the effect of the DC voltage is greatly reduced. Therefore, an alternating current voltage having a frequency of 100 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the ring electrode through an external circuit.
  • Other specific embodiments are the same as in the first embodiment.
  • the method of adding a ring electrode in this example is mainly for detecting a high concentration salt solution in the field of medicine and biological monitoring.
  • Example 2-3 is mainly for water quality testing such as drinking water and swimming water.
  • ISFET sensor chips require simultaneous detection of multiple targets in real time and large-scale arrays to greatly reduce the statistical error of detection, there are large-scale arrayed ISFETs on the chip. Therefore, in this example, a large plate electrode is added above the ISFET array, and a DC voltage or an AC voltage having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the plate electrode through an external circuit.
  • a large plate electrode is added above the ISFET array, and a DC voltage or an AC voltage having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the plate electrode through an external circuit.
  • Other specific embodiments are the same as in the first embodiment.
  • This example is applied to ion array sensors of large scale arrays.
  • a ring electrode is added to the inlet of the microfluidic cavity of each ISFET on a large scale array.
  • the connected ring electrodes can be connected to each other, and all of the ring electrodes form a multi-grid metal grid. A voltage is then applied to the metal grid.
  • Other specific embodiments are the same as in the first embodiment.
  • This example is equally applicable to ion array sensors of large scale arrays.
  • Embodiments 5 and 6 are applicable not only to conventional metal gate ISFETs, but also to nanoscale ISFETs, exposed silicon channel ISFETs, and the like.
  • two electrodes are added in parallel with the exposed gate plate of the conventional metal gate ISFET, one electrode is a rectangular parallelepiped electrode as shown in FIG. 7, and the other electrode is a U-shaped electrode as shown in FIG. .
  • Two electrodes surround the ISFET exposed gate plate in the middle. Applying a DC voltage or AC voltage with a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V to the two electrodes through an external circuit, driving the target molecules to electrophoresis, and concentrating the target molecules in the microfluidic cavity to the two electrodes On the surface of the grid plate.
  • Other specific embodiments are the same as in the first embodiment.
  • two electrodes are added at a position parallel to the gate plate of the exposed silicon channel ISFET, one electric The pole is shown as a rectangular parallelepiped electrode, and the other electrode is a U-shaped electrode as shown in FIG.
  • Two electrodes surround the ISFET exposed gate plate in the middle. Apply a frequency of 0 Hz to the two electrodes through an external circuit.
  • a U-shaped electrode is added to the side of the gate plate that exposes the silicon channel ISFET.
  • a DC voltage or an AC voltage having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the rectangular plate electrode and the gate plate exposed by the polysilicon ISFET through an external circuit, and the potential difference formed is electrophoretically driven to the target molecule, and the microfluidic cavity is driven.
  • the target molecules in the concentration are concentrated onto the surface of the grid plate.
  • Other specific embodiments are the same as in the first embodiment.
  • Examples 1-6 are applicable to ISFETs in which the microfluidic cavity is perpendicular to the grid plate, and Examples 7-9 are applicable to ISFETs in which the microfluidic cavity is parallel to the gate plate.

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Abstract

An electrophoresis system applicable to an ion-sensitive field effect sensor, comprising a microfluid cavity, a biosensor, and an electrode. The biosensor is connected to the electrode by means of electrolyte; and an external circuit applies a voltage between the biosensor and the electrode. An electrophoresis method applicable to an ion-sensitive field effect sensor, comprising: applying a voltage to the electrode to form an electric field and driving a target cell or particle/molecule to move to a sensor test area, thereby implementing an effect of concentrating a particle/molecule to be tested and improving detection sensitivity and accuracy rate. The electrode also has a heating effect and can control amplification or dissection of DNA molecules, thus implementing flexible gene detection, achieving heavy use of chips, and the reducing detection costs.

Description

一种适用于离子敏感场效应传感器的电泳系统及方法Electrophoresis system and method suitable for ion sensitive field effect sensor 技术领域Technical field
本发明涉及微流体电泳领域,更具体来说,本发明涉及通过电泳辅助的方式来浓缩待测粒子及分子的方法,以及借此来提高离子场效应传感器的信号噪声比的传感器电泳系统。The present invention relates to the field of microfluidic electrophoresis, and more particularly to a method of concentrating particles and molecules to be detected by means of electrophoresis, and a sensor electrophoresis system for increasing the signal-to-noise ratio of an ion field effect sensor.
背景技术Background technique
生物化学传感器为一种分析装置,用于检测粒子及生物分子等目标的种类及浓度。在医学生物检测和化学分析领域,常使用生物传感器来量化目标分析物样品中的分子的系统和方法是现代分析测量的基石。A biochemical sensor is an analytical device that detects the type and concentration of targets such as particles and biomolecules. In the field of medical bioassays and chemical analysis, systems and methods that often use biosensors to quantify molecules in a target analyte sample are the cornerstone of modern analytical measurements.
尤其是基于集成电路的生物化学传感器,比如离子敏感场效应晶体管ISFET具有独特的优越性。由于摩尔定律的长期有效作用,集成电路密度呈现不断地几何量级提高,MOS器件尺寸的持续减小,芯片性能价格比得以不断的改善,成本持续的下降。比如近年来美国Ion Torrent公司研制的基于ISFET半导体基因测序技术,取得巨大突破,通过大规模集成传感器电路芯片实现高通量并行测序,极大降低了基因测序价格及测序时间,并将准确度提高到99.6%以上。新一代基因测序技术正掀起生命科学和医学界的重大变革。In particular, integrated circuit based biochemical sensors, such as ion sensitive field effect transistors (ISFETs), have unique advantages. Due to the long-term effective effect of Moore's Law, the density of integrated circuits has been continuously increased in magnitude, the size of MOS devices has continued to decrease, the price-performance ratio of chips has been continuously improved, and the cost has continued to decline. For example, in recent years, the ISFET semiconductor gene sequencing technology developed by Ion Torrent Company of the United States has made great breakthroughs, achieving high-throughput parallel sequencing through large-scale integrated sensor circuit chips, which greatly reduces the price of gene sequencing and sequencing time, and improves the accuracy. More than 99.6%. A new generation of gene sequencing technology is revolutionizing the life sciences and the medical world.
但当ISFET传感器器件的尺寸缩小到深亚微米及纳米尺度时,由于传感器上方的微流体腔体的大幅减小,传感器对目标粒子/分子的捕捉能力会大幅降低。换言之,纳米尺度的传感器可以探测的液体样品体积变的微小,从而电解液中的待测粒子/分子数量变的很少而难于被检测到,造成传感器的信号噪声比大幅下降。其二,当传感器上方的微流体腔体到达微纳米尺度后,分子扩散速度也大幅降低(扩散速度~微流体开口大小的4次方呈正比)。比如DNA分子作为目标分子时,不易通过微流体入口到达纳米传感器表面的检测区域。传感器的检测速度和灵敏度的降低造成无法实现可靠的生物探测。However, when the size of the ISFET sensor device is reduced to deep submicron and nanometer scales, the sensor's ability to capture target particles/molecules is greatly reduced due to the large reduction of the microfluidic cavity above the sensor. In other words, the volume of the liquid sample that can be detected by the nanometer-scale sensor becomes small, so that the number of particles/molecules to be tested in the electrolyte becomes small and difficult to be detected, resulting in a significant decrease in the signal-to-noise ratio of the sensor. Second, when the microfluidic cavity above the sensor reaches the micro-nano scale, the molecular diffusion velocity is also greatly reduced (the diffusion rate is proportional to the fourth power of the microfluidic opening). For example, when a DNA molecule is used as a target molecule, it is difficult to reach the detection area of the surface of the nanosensor through the microfluidic inlet. The detection speed and sensitivity of the sensor are reduced, making it impossible to achieve reliable bioprobing.
发明内容Summary of the invention
为了克服现有技术的不足,本发明公开一种适用于纳米尺度离子场效应传感器的辅助电泳系统的设计和使用方法,来大幅提高微流体内粒子/分子向传感器表面的定向移动,从而提高传感器的信号噪声比、灵敏度、及检测速度。In order to overcome the deficiencies of the prior art, the present invention discloses a design and a method for using an auxiliary electrophoresis system suitable for a nano-scale ion field effect sensor to greatly increase the directional movement of particles/molecules in the microfluid to the sensor surface, thereby improving the sensor. Signal-to-noise ratio, sensitivity, and detection speed.
本发明是通过以下技术方案实现的: The invention is achieved by the following technical solutions:
离子场效应传感器辅助电泳系统包括一个或多个微流体腔体,微流体腔体内有一个或多个生物传感器,生物传感器周围有一个或多个金属电极组成。生物传感器及金属电极之间由电解液连接;外接电路给生物传感器、金属电极之间施加电压;The ion field effect sensor assisted electrophoresis system includes one or more microfluidic cavities, one or more biosensors in the microfluidic cavity, and one or more metal electrodes around the biosensor. The biosensor and the metal electrode are connected by an electrolyte; an external circuit applies a voltage between the biosensor and the metal electrode;
生物传感器为离子敏感场效应晶体管ISFET、暴露硅沟道ISFET、无结型离子敏感场效应晶体管,或纳米尺度离子敏感场效应晶体管;The biosensor is an ion sensitive field effect transistor ISFET, an exposed silicon channel ISFET, a junctionless ion sensitive field effect transistor, or a nanoscale ion sensitive field effect transistor;
金属电极的材料为铝、铜、硅化物、银、金、铂金中的一种或合金。The material of the metal electrode is one or alloy of aluminum, copper, silicide, silver, gold, platinum.
金属电极为平板电极,平板电极设置在ISFET的微流体腔体上方,通过外接电路给平板电极施加直流电压或者交流电压。The metal electrode is a plate electrode, and the plate electrode is disposed above the microfluidic cavity of the ISFET, and a direct current voltage or an alternating voltage is applied to the plate electrode through an external circuit.
当为大规模阵列的ISFET,在大规模阵列的ISFET的上方设置一个平板电极。When it is a large-scale array of ISFETs, a flat-plate electrode is placed over the ISFET of the large-scale array.
或金属电极为环形电极,呈环状线圈,由1个或多个线圈组成,线圈的宽度为20nm~100μm;优选项为1-10个线圈。Or the metal electrode is a ring electrode, which is a loop coil composed of one or more coils, and the width of the coil is 20 nm to 100 μm; preferably 1-10 coils.
环形电极设置在ISFET的微流体腔体入口处;a ring electrode is disposed at the inlet of the microfluidic cavity of the ISFET;
环形电极为闭合环状线圈或有开口的环形电极;The ring electrode is a closed loop coil or a ring electrode having an opening;
环形电极暴露于电解液中或掩埋于介电绝缘材料中;The ring electrode is exposed to the electrolyte or buried in the dielectric insulating material;
当为大规模阵列的ISFET,大规模阵列的每一个ISFET的微流体腔体入口处设置一个环形电极,相连的环形电极相互连接,形成多宫格金属网格,并对金属网格施加电压。In the case of large scale arrayed ISFETs, a ring electrode is placed at the entrance of the microfluidic cavity of each ISFET of the large scale array, and the connected ring electrodes are connected to each other to form a multi-grid metal grid and apply a voltage to the metal grid.
或金属电极为U形电极:Or the metal electrode is a U-shaped electrode:
在微流体腔体平行于栅极平板的ISFET时,在ISFET暴露的栅极平板的一侧添加一个U形电极,通过外接电路给U形电极及ISFET暴露的栅极平板施加直流电压或者交流电压;When the microfluidic cavity is parallel to the ISFET of the gate plate, a U-shaped electrode is added to one side of the ISFET exposed gate plate, and a DC voltage or an AC voltage is applied to the U-shaped electrode and the exposed gate plate of the ISFET through an external circuit. ;
或金属电极为长方体电极、U形电极组成的双电极:Or the metal electrode is a double electrode composed of a rectangular parallelepiped electrode and a U-shaped electrode:
在微流体腔体平行或垂直于栅极平板的ISFET时,长方体电极、U形电极组成的双电极将ISFET暴露的栅极平板包围在中间,通过外接电路给长方体电极、U形电极施加直流电压或者交流电压。When the microfluidic cavity is parallel or perpendicular to the ISFET of the grid plate, the double electrode composed of the rectangular parallelepiped electrode and the U-shaped electrode surrounds the exposed gate plate of the ISFET, and a DC voltage is applied to the rectangular parallelepiped electrode and the U-shaped electrode through an external circuit. Or AC voltage.
金属电极为微纳米电极,宽度为20nm~200μm。The metal electrode is a micro-nano electrode having a width of 20 nm to 200 μm.
一种适用于离子敏感场效应传感器的电泳方法,其特征在于:外接电路给生物传感器、金属电极之间施加电压,形成电势差,对目标分子起电泳驱动作用,将其浓缩到传感器表面,一段时间后中断电压,同时启动传感器进行检测。An electrophoresis method suitable for an ion-sensitive field effect sensor, characterized in that an external circuit applies a voltage between a biosensor and a metal electrode to form a potential difference, and electrophoresis is driven on the target molecule to concentrate it on the surface of the sensor for a period of time. After the voltage is interrupted, the sensor is activated for detection.
一种电压施加的方法是在传统的金属栅极离子敏感场效应传感器的栅极及电极之 间施加电压。当离子敏感场效应传感器的沟道直接暴露在溶液中时(暴露沟道传感器)另一种方法是在传感器暴露的沟道及电极之间施加电压。对于非结型(沟道与源极/漏极之间没有PN结)离子敏感场效应传感器,如果其沟道部分暴露在溶液中时,也可以在传感器的漏极(或源极)及电极之间施加电压。A method of voltage application is at the gate and electrode of a conventional metal gate ion sensitive field effect sensor Voltage is applied between them. Another method when the channel of the ion-sensitive field effect sensor is directly exposed to the solution (exposing the channel sensor) is to apply a voltage between the exposed channel of the sensor and the electrode. For non-junction type (no PN junction between channel and source/drain), the ion-sensitive field effect sensor can also be at the drain (or source) and electrode of the sensor if its channel portion is exposed to the solution. A voltage is applied between them.
施加电压的大小为10mV~20V,时间为10ms~1000s,频率为小于或等于50MHz;The applied voltage is 10mV to 20V, the time is 10ms to 1000s, and the frequency is less than or equal to 50MHz;
当待测分子/粒子的介电常数和溶液的介电常数不同时,或待测物为细胞、DNA、蛋白质,交流电压频率50Hz~5000Hz,通过介电电泳原理DEP将待测分子浓缩到ISFET栅极表面;When the dielectric constant of the molecule/particle to be tested differs from the dielectric constant of the solution, or the analyte is a cell, DNA, or protein, the AC voltage frequency is 50 Hz to 5000 Hz, and the molecule to be tested is concentrated to the ISFET by the dielectric electrophoresis principle DEP. Gate surface
当待测分子为微小纳米颗粒或粒子,或待测分子的介电常数和电解液的介电常数比较接近时,交流电压的频率设置在500Hz~100000Hz,来实现交流电渗透流ACEO现象;When the molecule to be tested is a small nanoparticle or particle, or the dielectric constant of the molecule to be tested is relatively close to the dielectric constant of the electrolyte, the frequency of the alternating voltage is set at 500 Hz to 100000 Hz to realize the ACOX phenomenon of the alternating current permeation flow;
当待测溶液粒子浓度高,导电率在10mS以上时,交流电压频率设置在100000Hz~50MHz范围,通过交流电热原理实现电泳ACET来浓缩待测分子。When the particle concentration of the solution to be tested is high and the conductivity is above 10 mS, the frequency of the alternating voltage is set in the range of 100000 Hz to 50 MHz, and the electrophoresis ACET is realized by the principle of alternating current electrothermal to concentrate the molecule to be tested.
微流体扩散距离L为1~100μm。The microfluid diffusion distance L is 1 to 100 μm.
金属电极可作为电子加热丝,通过给金属电极提供较大电流对微流体腔体内的电解液进行加热,控制温度在20℃~100℃,达到目标分子与探针分离的效果,使生物传感器能够被重复使用。The metal electrode can be used as an electronic heating wire to heat the electrolyte in the microfluidic cavity by supplying a large current to the metal electrode, and the temperature is controlled at 20 ° C to 100 ° C to achieve the separation effect between the target molecule and the probe, so that the biosensor can It is reused.
与现有技术相比,本发明所述离子场效应传感器电泳系统的优越效果在于:对电极施加电压后形成电场,驱动目标细胞,或者粒子/分子运动到传感器测试区域,实现浓缩待测粒子/分子的作用,提高检测的灵敏度和准确率;电极还具有加热的作用,可以控制DNA分子的扩增或剥离,实现灵活的基因检测,并可实现芯片的重复使用,降低检测成本。Compared with the prior art, the ion field effect sensor electrophoresis system of the present invention has the advantages of forming an electric field after applying a voltage to the electrode, driving the target cell, or moving the particle/molecule to the sensor test area to realize concentration of the particle to be tested/ The role of the molecule to improve the sensitivity and accuracy of the detection; the electrode also has the function of heating, can control the amplification or exfoliation of the DNA molecule, realize flexible gene detection, and can realize the repeated use of the chip and reduce the detection cost.
离子场效应传感器辅助电泳系统成功的解决了生物传感器不易检测低浓度离子/分子和不能重复使用等问题。尤其对于DNA检测,通过反复的加热和降温可以实现芯片上的DNA扩增(PCR)来增加待测DNA样品的数量,提高检测灵敏度。The ion field effect sensor assisted electrophoresis system successfully solves the problem that the biosensor is difficult to detect low concentration ions/molecules and cannot be reused. Especially for DNA detection, on-chip DNA amplification (PCR) can be achieved by repeated heating and cooling to increase the number of DNA samples to be tested and improve detection sensitivity.
附图说明DRAWINGS
图1为本发明实施例的平板电极和暴露硅沟道ISFET形成电泳系统。1 is a diagram showing a plate electrode and an exposed silicon channel ISFET forming electrophoresis system according to an embodiment of the present invention.
图2(a)为本发明实施例的环形电极和暴露硅沟道ISFET形成电泳系统的侧视图;2(a) is a side view showing a ring electrode and an exposed silicon channel ISFET forming an electrophoresis system according to an embodiment of the present invention;
图2(b)为本发明实施例的环形电极和暴露硅沟道ISFET形成电泳系统的俯视图。 2(b) is a top plan view of a ring electrode and an exposed silicon channel ISFET forming electrophoresis system in accordance with an embodiment of the present invention.
图3(a)本发明实施例的环形电极(有开口)和传统金属栅极ISFET形成电泳系统侧视图;3(a) is a side view of a ring electrode (with an opening) and a conventional metal gate ISFET forming an electrophoresis system according to an embodiment of the present invention;
图3(b)本发明实施例的环形电极(有开口)和传统金属栅极ISFET形成电泳系统俯视图。Figure 3 (b) is a top plan view of a ring electrode (with openings) and a conventional metal gate ISFET forming an electrophoresis system in accordance with an embodiment of the present invention.
图4(a)本发明实施例的掩埋的环形电极和传统金属栅极ISFET形成的电泳系统侧视图;4(a) is a side view of an electrophoresis system formed by a buried ring electrode and a conventional metal gate ISFET of an embodiment of the present invention;
图4(b)本发明实施例的掩埋的环形电极和传统金属栅极ISFET形成的电泳系统俯视图。4(b) is a top plan view of an electrophoresis system formed by a buried ring electrode and a conventional metal gate ISFET of an embodiment of the present invention.
图5本发明实施例的平板电极和ISFET大规模阵列形成电泳系统。Figure 5 shows a plate electrode and ISFET large scale array forming electrophoresis system in accordance with an embodiment of the present invention.
图6(a)本发明实施例的环形电极和ISFET大规模阵列形成电泳系统侧视图;Figure 6 (a) is a side view of a ring-shaped electrode and ISFET large-scale array forming electrophoresis system according to an embodiment of the present invention;
图6(b)本发明实施例的环形电极和ISFET大规模阵列形成电泳系统俯视图。Figure 6 (b) is a top plan view of a ring electrode and ISFET large scale array forming electrophoresis system in accordance with an embodiment of the present invention.
图7(a)本发明实施例的双电极和ISFET形成水平方向电泳系统侧视图;Figure 7 (a) is a side view of a two-electrode and ISFET forming a horizontal direction electrophoresis system according to an embodiment of the present invention;
图7(b)本发明实施例的双电极和ISFET形成水平方向电泳系统俯视图。Figure 7 (b) is a plan view of a two-electrode and ISFET forming a horizontal electrophoresis system in accordance with an embodiment of the present invention.
图8(a)本发明实施例的双电极和暴露硅沟道ISFET形成水平方向电泳系统侧视图;8(a) is a side view of a horizontal electrode electrophoresis system formed by a dual electrode and an exposed silicon channel ISFET according to an embodiment of the present invention;
图8(b)本发明实施例的双电极和暴露硅沟道ISFET形成水平方向电泳系统俯视图。Figure 8 (b) is a top plan view of a two-electrode and exposed silicon channel ISFET forming a horizontal direction electrophoresis system in accordance with an embodiment of the present invention.
图9(a)本发明实施例的单电极和暴露硅沟道ISFET形成水平方向电泳系统侧视图;Figure 9 (a) is a side view of a single-electrode and exposed silicon channel ISFET forming a horizontal direction electrophoresis system in accordance with an embodiment of the present invention;
图9(b)本发明实施例的单电极和暴露硅沟道ISFET形成水平方向电泳系统俯视图。Figure 9 (b) is a top plan view of a single-electrode and exposed silicon channel ISFET forming a horizontal electrophoresis system in accordance with an embodiment of the present invention.
具体实施方式detailed description
为了便于本领域技术人员的理解,下面结合实施例与附图对本发明作进一步的说明。In order to facilitate the understanding of those skilled in the art, the present invention will be further described below in conjunction with the embodiments and the accompanying drawings.
实施例1Example 1
如附图1所示,以一种离子敏感场效应传感器的结构来说明本发明。这种离子敏感场效应传感器的沟道直接暴露在溶液中,简称暴露沟道ISFET传感器。如图1所示,这种ISFET的实现方式可以是在标准CMOS工艺中,使用多晶硅层作为ISFET的沟道, 并在沟道上方实现溶液腔体。另一种方法是在SOI(silicon-on-insulator)绝缘膜上硅晶片上使用上层单晶硅作为沟道来实现图1所示的暴露硅沟道ISFET。这种ISFET结构也可以采用别的材料作为沟道,比如Ge锗,SiGe,石墨烯薄膜,MoS2膜,WSe2膜等等。本实施例在暴露沟道ISFET的微流体腔体上方位置添加一个平板电极,通过外接电路给平板电极施加一个频率为0Hz~50MHz、大小为10mV~20V的直流电压或者交流电压。The invention is illustrated in the structure of an ion sensitive field effect sensor as shown in FIG. The channel of this ion-sensitive field effect sensor is directly exposed to the solution, referred to as the exposed channel ISFET sensor. As shown in Figure 1, this ISFET can be implemented in a standard CMOS process using a polysilicon layer as the channel for the ISFET. And the solution cavity is realized above the channel. Another method is to use the upper single crystal silicon as a channel on a silicon wafer on an SOI (silicon-on-insulator) insulating film to realize the exposed silicon channel ISFET shown in FIG. Such an ISFET structure can also use other materials as channels, such as Ge锗, SiGe, graphene film, MoS2 film, WSe2 film, and the like. In this embodiment, a plate electrode is added at a position above the microfluidic cavity of the exposed channel ISFET, and a DC voltage or an AC voltage having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the plate electrode through an external circuit.
外接电路给平板电极施加的电压大于ISFET栅极的电压,形成电势差,对目标分子起电泳驱动作用,将其浓缩到传感表面,提高传感器检测的灵敏度,准确率,降低检测时间(主要是待测分子的扩散时间)。一段时间后(比如10ms~1000s)中断电泳电压,防止电压对检测结果的影响,同时启动传感器进行检测。The voltage applied to the plate electrode by the external circuit is greater than the voltage of the ISFET gate, forming a potential difference, driving the target molecule to electrophoresis, concentrating it onto the sensing surface, improving the sensitivity of the sensor detection, accuracy, and reducing the detection time (mainly waiting) Measuring the diffusion time of the molecule). After a period of time (such as 10ms to 1000s), the electrophoresis voltage is interrupted to prevent the voltage from affecting the detection result, and the sensor is activated for detection.
另外,可通过给电极提供较大电流对微流体腔体内的电解液进行加热,控制温度在20℃~100℃,达到目标分子与探针分离的效果,使生物传感器能够被重复使用。离子场效应传感器辅助电泳系统成功的解决了生物传感器不易检测低浓度离子/分子和不能重复使用等问题。尤其对于DNA检测,通过反复的加热和降温可以实现芯片上的DNA扩增(PCR)来增加待测DNA样品的数量,提高检测灵敏度。In addition, the electrolyte can be heated in the microfluidic cavity by supplying a large current to the electrode, and the temperature is controlled at 20 ° C to 100 ° C to achieve the separation effect of the target molecule and the probe, so that the biosensor can be reused. The ion field effect sensor assisted electrophoresis system successfully solves the problem that the biosensor is difficult to detect low concentration ions/molecules and cannot be reused. Especially for DNA detection, on-chip DNA amplification (PCR) can be achieved by repeated heating and cooling to increase the number of DNA samples to be tested and improve detection sensitivity.
更进一步的这里详细阐述电泳设置的电压频率及幅度对于不同测试电解液的使用方法。根据所加电压是直流还是交流,电泳的基本原理和适用电解质的范围将不同。比如加直流电压时是直流电泳原理(DCEK),电压强度需要达到105伏/米左右才能有效驱动带电分子。比如当微流体腔体高度为10微米时,所需电压为1伏特左右。但是当腔体较大时,将需要很大电压才能驱动电泳,高电压将可能产生电化学反应,比如电解水而产生气泡,影响检测的准确性。这种情况可以采用交流电压或交流直流相结合的设置,这种情况是采用以下的几种交流电泳原理(ACEK)。Further here, the method of using the voltage and amplitude of the electrophoresis setting for different test electrolytes is described in detail. Depending on whether the applied voltage is DC or AC, the basic principles of electrophoresis and the range of applicable electrolytes will vary. For example when the DC voltage is a DC electrophoresis principle (DCEK), the intensity of the voltage needed to reach approximately 105 V / m in order to effectively drive charged molecules. For example, when the height of the microfluidic cavity is 10 microns, the required voltage is about 1 volt. However, when the cavity is large, a large voltage will be required to drive the electrophoresis, and a high voltage may cause an electrochemical reaction, such as electrolysis of water to generate bubbles, which affects the accuracy of detection. In this case, an AC voltage or AC-DC combination can be used. In this case, the following AC electrophoresis principles (ACEK) are used.
交流电泳原理的具体实施方案又细分为三种情况,都需要图1所示平板电极和图1中所示的ISFET的栅极形成非对称立体结构,实现如图1所示的不均匀分布的电场。当待测分子/粒子的介电常数和溶液的介电常数不同时,可采用相对低频率的交流电压(比如50Hz到5000Hz),通过介电电泳原理(DEP)来将待测分子浓缩到ISFET栅极表面。这种设计尤其适合对相对较大的有机分子,比如细胞、DNA、蛋白质等进行电泳浓缩。DEP电泳所需要的电压一般还是较大,至少都在几伏特左右。The specific implementation of the AC electrophoresis principle is further subdivided into three cases, both of which require the plate electrode shown in FIG. 1 and the gate of the ISFET shown in FIG. 1 to form an asymmetric solid structure, thereby achieving uneven distribution as shown in FIG. Electric field. When the dielectric constant of the molecule/particle to be tested is different from the dielectric constant of the solution, a relatively low frequency AC voltage (such as 50 Hz to 5000 Hz) may be used to concentrate the molecule to be tested to the ISFET by the Dielectrophoresis Principle (DEP). Gate surface. This design is especially suitable for electrophoretic concentration of relatively large organic molecules such as cells, DNA, proteins, and the like. The voltage required for DEP electrophoresis is generally large, at least a few volts.
当待测分子很小,比如微小纳米颗粒或粒子,又或者待测分子的介电常数和溶液的介电常数比较接近时,介电电泳原理将会失效。这时在同样的图1结构设计里,可以提 高交流电压的频率来实现交流电渗透流(ACEO)现象,ACEO也需要非对称的电场分布,电压幅度较DEP小。频率一般设置在几百Hz到10WHz。When the molecule to be tested is small, such as tiny nanoparticles or particles, or the dielectric constant of the molecule to be tested is close to the dielectric constant of the solution, the dielectrophoresis principle will fail. At this time, in the same structural design of Figure 1, it can be mentioned The AC voltage is high to achieve AC electroosmotic flow (ACEO). ACEO also requires an asymmetric electric field distribution with a smaller voltage amplitude than DEP. The frequency is generally set at several hundred Hz to 10WHz.
ACEO适合于较低盐浓度液体,如果待测溶液粒子浓度高,导电率高(比如10mS以上)时,ACEO将不再有效。这时,再次提高电压频率至10WHz至50MHz范围,通过交流电热原理实现电泳(ACET)来浓缩待测分子。ACEO is suitable for liquids with lower salt concentration. If the concentration of the particles to be tested is high and the conductivity is high (for example, above 10 mS), ACEO will no longer be effective. At this time, the voltage frequency is again increased to a range of 10 WHz to 50 MHz, and electrophoresis (ACET) is performed by an alternating current electrothermal principle to concentrate the molecules to be tested.
以上所诉的各种电泳原理及电压设置方法同样适用于以下几个案例。后文将不再重复。The various electrophoresis principles and voltage setting methods mentioned above are also applicable to the following cases. The text will not be repeated later.
实施例2Example 2
如附图2所示,在暴露硅沟道ISFET的微流体腔体入口处添加一个环形电极,同样通过外接电路给环形电极施加一个频率为0Hz~50MHz、大小为10mV~20V的直流电压或者交流电压。其他具体实施方式同实施例1。As shown in FIG. 2, a ring electrode is added at the entrance of the microfluidic cavity exposing the silicon channel ISFET, and a DC voltage or AC having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the ring electrode through an external circuit. Voltage. Other specific embodiments are the same as in the first embodiment.
相比较实例1在微流体腔体上方添加的平板电极,实例2的环形电极能方便且准确地控制微流体扩散L的大小(前期设计L的大小为8到12微米),从而控制电极对微流体腔体中溶液施加电压的大小,防止因电压过大导致水电解产生气泡对检测结果产生影响。实现离子场效应传感器辅助电泳系统高效地集中待测离子/分子,且不对检测结果产生影响,即高准确性。Comparing the plate electrode added in the microfluidic cavity of Example 1, the ring electrode of Example 2 can conveniently and accurately control the size of the microfluidic diffusion L (the size of the previous design L is 8 to 12 microns), thereby controlling the electrode pair micro The magnitude of the voltage applied to the solution in the fluid chamber prevents the water electrolysis from being generated due to excessive voltage, which has an effect on the detection result. The ion field effect sensor assisted electrophoresis system efficiently concentrates the ions/molecules to be measured, and does not affect the detection result, that is, high accuracy.
实施例3Example 3
如附图3所示,同样在传统的金属栅极ISFET的微流体腔体入口处添加一个环形电极,同样通过外接电路给环形电极施加一个频率为0Hz~50MHz、大小为10mV~20V的直流电压或者交流电压。外接电路给环形电极施加的电压大于金属栅极的电压,形成电势差,对目标分子起电泳驱动作用,将其浓缩到传感表面。其他具体实施方式同实施例1。As shown in FIG. 3, a ring electrode is also added at the entrance of the microfluidic cavity of the conventional metal gate ISFET, and a DC voltage having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the ring electrode through an external circuit. Or AC voltage. The external circuit applies a voltage to the ring electrode that is greater than the voltage of the metal gate, forms a potential difference, and electrophoretically drives the target molecule to concentrate it onto the sensing surface. Other specific embodiments are the same as in the first embodiment.
离子场效应传感器辅助电泳系统不仅能应用于暴露硅沟道ISFET,同样可以应用于传统的金属栅极ISFET。这种传统的ISFET结构也包括将多晶硅栅极直接暴露在溶液中的情况,也适用于本发明的电泳系统。The ion field effect sensor-assisted electrophoresis system can be applied not only to exposed silicon channel ISFETs, but also to conventional metal gate ISFETs. This conventional ISFET structure also includes the case where the polysilicon gate is directly exposed to the solution, and is also applicable to the electrophoresis system of the present invention.
实施例4Example 4
如附图4所示,同样在传统的金属栅极ISFET的微流体腔体入口处添加一个环形电极。不同于实例3中将环形电极暴露于溶液中,此实例将环形电极掩埋于氧化硅等介电绝缘材料(也可以是氧化铝,氧化钛等)中。原因在于在大于5毫摩尔/升的高浓度的盐 溶液中,环形电极的金属材质容易在溶液中溶解。并且浓度较高的盐溶液的导电率较高,容易屏蔽环形电极所产生的电场。由于环形电极不暴露在溶液中,直流电压的效果大幅度降低。所以通过外接电路给环形电极施加一个频率为100Hz到50MHz、大小为10mV~20V的交流电压。其他具体实施方式同实施例1。As shown in Figure 4, a ring electrode is also added at the entrance of the microfluidic cavity of a conventional metal gate ISFET. Unlike the case where the ring electrode is exposed to a solution in Example 3, this example buryes the ring electrode in a dielectric insulating material such as silicon oxide (which may also be alumina, titanium oxide, etc.). The reason is the high concentration of salt at more than 5 mmol/L In the solution, the metal material of the ring electrode is easily dissolved in the solution. Moreover, the salt solution having a higher concentration has a higher conductivity and is easy to shield the electric field generated by the ring electrode. Since the ring electrode is not exposed to the solution, the effect of the DC voltage is greatly reduced. Therefore, an alternating current voltage having a frequency of 100 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the ring electrode through an external circuit. Other specific embodiments are the same as in the first embodiment.
此实例中环形电极的添加方法,主要针对于医药,生物监测领域中高浓度盐溶液的检测。实例2-3主要针对饮用水、游泳水等水质检测。The method of adding a ring electrode in this example is mainly for detecting a high concentration salt solution in the field of medicine and biological monitoring. Example 2-3 is mainly for water quality testing such as drinking water and swimming water.
实施例5Example 5
如附图5所示,由于现在ISFET传感器芯片需要实时快速对多个目标同时检测,并通过大规模阵列来大幅降低检测的统计误差,所以芯片上有大规模阵列排列的ISFET。所以此实例在ISFET阵列的上方添加一个大的平板电极,同样通过外接电路给平板电极施加一个频率为0Hz~50MHz、大小为10mV~20V的直流电压或者交流电压。其他具体实施方式同实施例1。As shown in FIG. 5, since ISFET sensor chips require simultaneous detection of multiple targets in real time and large-scale arrays to greatly reduce the statistical error of detection, there are large-scale arrayed ISFETs on the chip. Therefore, in this example, a large plate electrode is added above the ISFET array, and a DC voltage or an AC voltage having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the plate electrode through an external circuit. Other specific embodiments are the same as in the first embodiment.
此实例应用于大规模阵列的离子场效应传感器。This example is applied to ion array sensors of large scale arrays.
实施例6Example 6
如附图6所示,在大规模阵列上每一个ISFET的微流体腔体入口处添加一个环形电极。相连的环形电极可相互连接,所有环形电极形成多宫格金属网格。然后对金属网格施加电压。其他具体实施方式同实施例1。As shown in Figure 6, a ring electrode is added to the inlet of the microfluidic cavity of each ISFET on a large scale array. The connected ring electrodes can be connected to each other, and all of the ring electrodes form a multi-grid metal grid. A voltage is then applied to the metal grid. Other specific embodiments are the same as in the first embodiment.
此实例同样应用于大规模阵列的离子场效应传感器。This example is equally applicable to ion array sensors of large scale arrays.
实施例5和6不仅适用于传统的金属栅极ISFET,也适用于纳米尺度ISFET,暴露硅沟道ISFET等各种电子传感器。Embodiments 5 and 6 are applicable not only to conventional metal gate ISFETs, but also to nanoscale ISFETs, exposed silicon channel ISFETs, and the like.
实施例7Example 7
如附图7所示,在传统的金属栅极ISFET暴露的栅极平板平行的位置添加两个电极,一个电极如图7所示为长方体电极,另一个电极如图7所示为U形电极。两个电极将ISFET暴露的栅极平板包围在中间。通过外接电路给两个电极施加一个频率为0Hz~50MHz、大小为10mV~20V的直流电压或者交流电压,对目标分子起电泳驱动作用,将微流体腔体中的目标分子浓缩到两电极包围的栅极平板表面上。其他具体实施方式同实施例1。As shown in FIG. 7, two electrodes are added in parallel with the exposed gate plate of the conventional metal gate ISFET, one electrode is a rectangular parallelepiped electrode as shown in FIG. 7, and the other electrode is a U-shaped electrode as shown in FIG. . Two electrodes surround the ISFET exposed gate plate in the middle. Applying a DC voltage or AC voltage with a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V to the two electrodes through an external circuit, driving the target molecules to electrophoresis, and concentrating the target molecules in the microfluidic cavity to the two electrodes On the surface of the grid plate. Other specific embodiments are the same as in the first embodiment.
实施例8Example 8
如附图8所示,在暴露硅沟道ISFET的栅极平板平行的位置添加两个电极,一个电 极如图8所示为长方体电极,另一个电极如图8所示为U形电极。两个电极将ISFET暴露的栅极平板包围在中间。通过外接电路给两个电极施加一个频率为0Hz~As shown in FIG. 8, two electrodes are added at a position parallel to the gate plate of the exposed silicon channel ISFET, one electric The pole is shown as a rectangular parallelepiped electrode, and the other electrode is a U-shaped electrode as shown in FIG. Two electrodes surround the ISFET exposed gate plate in the middle. Apply a frequency of 0 Hz to the two electrodes through an external circuit.
50MHz、大小为10mV~20V的直流电压或者交流电压。电极周围形成电场,对目标分子起电泳驱动作用,将微流体腔体中的目标分子浓缩到两电极包围的栅极平板表面上。其他具体实施方式同实施例1。50MHz, DC voltage of 10mV ~ 20V or AC voltage. An electric field is formed around the electrode to electrophoretically drive the target molecule, and the target molecules in the microfluidic cavity are concentrated onto the surface of the grid plate surrounded by the two electrodes. Other specific embodiments are the same as in the first embodiment.
实施例9Example 9
如附图9所示,在暴露硅沟道ISFET的栅极平板的一侧添加一个U形电极。通过外接电路给长方体电极和多晶硅ISFET暴露的栅极平板施加一个频率为0Hz~50MHz、大小为10mV~20V的直流电压或者交流电压,形成的电势差对目标分子起电泳驱动作用,将微流体腔体中的目标分子浓缩到栅极平板表面上。其他具体实施方式同实施例1。As shown in Figure 9, a U-shaped electrode is added to the side of the gate plate that exposes the silicon channel ISFET. A DC voltage or an AC voltage having a frequency of 0 Hz to 50 MHz and a size of 10 mV to 20 V is applied to the rectangular plate electrode and the gate plate exposed by the polysilicon ISFET through an external circuit, and the potential difference formed is electrophoretically driven to the target molecule, and the microfluidic cavity is driven. The target molecules in the concentration are concentrated onto the surface of the grid plate. Other specific embodiments are the same as in the first embodiment.
实例1~6适用于微流体腔体垂直于栅极平板的ISFET,实例7~9适用于微流体腔体平行于栅极平板的ISFET。Examples 1-6 are applicable to ISFETs in which the microfluidic cavity is perpendicular to the grid plate, and Examples 7-9 are applicable to ISFETs in which the microfluidic cavity is parallel to the gate plate.
以上的实施例仅为说明本发明的技术思想,不能以此限定本发明的保护范围,凡是按照本发明提出的技术思想,在技术方案基础上所做的任何改动,均落入本发明保护范围之内。本发明未涉及的技术均可通过现有的技术加以实现。 The above embodiments are merely illustrative of the technical idea of the present invention, and the scope of protection of the present invention is not limited thereto. Any changes made on the basis of the technical solutions according to the technical idea proposed by the present invention fall within the scope of protection of the present invention. within. Techniques not covered by the present invention can be implemented by existing techniques.

Claims (10)

  1. 一种适用于离子敏感场效应传感器的电泳系统,其特征在于:包括微流体腔体,生物传感器,电极;所述生物传感器位于微流体腔体内,所述生物传感器及所述电极之间由电解液连接;外接电路给所述生物传感器、所述电极之间施加电压。An electrophoresis system suitable for an ion-sensitive field effect sensor, comprising: a microfluidic cavity, a biosensor, an electrode; the biosensor is located in a microfluidic cavity, and the biosensor and the electrode are electrolyzed a liquid connection; an external circuit applies a voltage between the biosensor and the electrode.
  2. 根据权利要求1所述的电泳系统,其特征在于:所述生物传感器为离子敏感场效应晶体管ISFET、暴露沟道ISFET,无结型离子敏感场效应晶体管,或者纳米尺度离子敏感场效应晶体管;The electrophoresis system according to claim 1, wherein said biosensor is an ion sensitive field effect transistor ISFET, an exposed channel ISFET, a junctionless ion sensitive field effect transistor, or a nanoscale ion sensitive field effect transistor;
    所述电极的材料为铝、铜、硅化物、银、金、铂金中的一种或合金。The material of the electrode is one of aluminum, copper, silicide, silver, gold, platinum or alloy.
  3. 根据权利要求1或2所述的电泳系统,其特征在于:所述电极为平板电极,所述平板电极设置在生物传感器的所述微流体腔体上方,通过外接电路给所述平板电极施加直流电压或者交流电压;The electrophoresis system according to claim 1 or 2, wherein the electrode is a plate electrode, and the plate electrode is disposed above the microfluidic cavity of the biosensor, and a direct current is applied to the plate electrode through an external circuit. Voltage or alternating voltage;
    当为大规模阵列的生物传感器,在大规模阵列的生物传感器的上方设置一个所述平板电极;When it is a large-scale array of biosensors, one of the plate electrodes is disposed above the large-scale array of biosensors;
    所述电极为微纳米尺度电极,宽度为20nm~200μm。The electrode is a micro-nano scale electrode having a width of 20 nm to 200 μm.
  4. 根据权利要求1或2所述的电泳系统,其特征在于:所述电极为环形电极,呈环状线圈,由一个或多个线圈组成,所述线圈的宽度为20nm~100μm;The electrophoresis system according to claim 1 or 2, wherein the electrode is a ring-shaped electrode and is a toroidal coil composed of one or more coils having a width of 20 nm to 100 μm;
    所述环形电极设置在所述微流体腔体入口处;The ring electrode is disposed at an inlet of the microfluidic cavity;
    所述环形电极为闭合环状线圈或有开口的环形电极;The ring electrode is a closed loop coil or a ring electrode having an opening;
    所述环形电极暴露于电解液中或掩埋于介电绝缘材料中;The ring electrode is exposed to the electrolyte or buried in the dielectric insulating material;
    当为大规模阵列的生物传感器,大规模阵列的每一个生物传感器的所述微流体腔体入口处设置一个所述环形电极,相连的所述环形电极相互连接,形成多宫格金属网格,并对金属网格施加电压;In the case of a large-scale array of biosensors, one of the ring electrodes is disposed at the inlet of the microfluidic cavity of each biosensor of the large-scale array, and the connected ring electrodes are connected to each other to form a multi-grid metal grid. Applying a voltage to the metal grid;
    所述电极为微纳米尺度电极,宽度为20nm~200μm。The electrode is a micro-nano scale electrode having a width of 20 nm to 200 μm.
  5. 根据权利要求1或2所述的电泳系统,其特征在于,The electrophoresis system according to claim 1 or 2, wherein
    所述电极为U形电极:The electrode is a U-shaped electrode:
    在所述微流体腔体平行于栅极平板的ISFET时,在ISFET暴露的栅极平板的一侧添加一个U形电极,通过外接电路给U形电极及ISFET暴露的栅极平板施加直流电压或者交流电压;When the microfluidic cavity is parallel to the ISFET of the gate plate, a U-shaped electrode is added to one side of the ISFET exposed gate plate, and a DC voltage is applied to the U-shaped electrode and the ISFET exposed gate plate through an external circuit or AC voltage;
    或所述电极为长方体电极、U形电极组成的双电极:Or the electrode is a double electrode composed of a rectangular parallelepiped electrode and a U-shaped electrode:
    在所述微流体腔体平行或垂直于栅极平板的ISFET时,长方体电极、U形电极组成 的双电极将ISFET暴露的栅极平板包围在中间,通过外接电路给长方体电极、U形电极施加直流电压或者交流电压;When the microfluidic cavity is parallel or perpendicular to the ISFET of the gate plate, the rectangular parallelepiped electrode and the U-shaped electrode are composed The two electrodes surround the exposed gate plate of the ISFET, and apply a DC voltage or an AC voltage to the rectangular parallelepiped electrode and the U-shaped electrode through an external circuit;
    所述电极为微纳米尺度电极,宽度为20nm~200μm。The electrode is a micro-nano scale electrode having a width of 20 nm to 200 μm.
  6. 一种适用于离子敏感场效应传感器的电泳方法,其特征在于:外接电路给生物传感器、电极之间施加电压,形成电势差,对目标分子起电泳驱动作用,将其浓缩到ISFET栅极表面,一段时间后中断电压,同时启动传感器进行检测。An electrophoresis method suitable for an ion-sensitive field effect sensor, characterized in that an external circuit applies a voltage between a biosensor and an electrode to form a potential difference, and electrophoretically drives the target molecule to concentrate it on the surface of the ISFET gate. After the time, the voltage is interrupted and the sensor is activated for detection.
  7. 根据权利要求6所述的电泳方法,其特征在于:电压施加的方法是在传统的金属栅极离子敏感场效应传感器的栅极及电极之间施加电压;或在ISFET暴露的沟道及电极之间施加电压;或在暴露沟道的非结型ISFET的漏极/源极及电极之间施加电压。The electrophoresis method according to claim 6, wherein the voltage is applied by applying a voltage between the gate and the electrode of the conventional metal gate ion-sensitive field effect sensor; or the channel and the electrode exposed by the ISFET Apply a voltage between them; or apply a voltage between the drain/source and the electrode of the non-junction ISFET that exposes the channel.
  8. 根据权利要求6或7所述的电泳方法,其特征在于:所述施加电压的大小为10mV~20V,时间为10ms~1000s,频率为小于或等于50MHz;The electrophoresis method according to claim 6 or 7, wherein the applied voltage has a magnitude of 10 mV to 20 V, a time of 10 ms to 1000 s, and a frequency of 50 MHz or less;
    当待测分子/粒子的介电常数和溶液的介电常数不同时,或待测物为细胞、DNA、蛋白质,交流电压频率50Hz~5000Hz,通过介电电泳原理DEP将待测分子浓缩到ISFET栅极表面;When the dielectric constant of the molecule/particle to be tested differs from the dielectric constant of the solution, or the analyte is a cell, DNA, or protein, the AC voltage frequency is 50 Hz to 5000 Hz, and the molecule to be tested is concentrated to the ISFET by the dielectric electrophoresis principle DEP. Gate surface
    当待测分子为微小纳米颗粒或粒子,或待测分子的介电常数和电解液的介电常数比较接近时,交流电压的频率设置在500Hz~100000Hz,来实现交流电渗透流ACEO现象;When the molecule to be tested is a small nanoparticle or particle, or the dielectric constant of the molecule to be tested is relatively close to the dielectric constant of the electrolyte, the frequency of the alternating voltage is set at 500 Hz to 100000 Hz to realize the ACOX phenomenon of the alternating current permeation flow;
    当待测溶液粒子浓度高,导电率在10mS以上时,交流电压频率设置在100000Hz~50MHz范围,通过交流电热原理实现电泳ACET来浓缩待测分子。When the particle concentration of the solution to be tested is high and the conductivity is above 10 mS, the frequency of the alternating voltage is set in the range of 100000 Hz to 50 MHz, and the electrophoresis ACET is realized by the principle of alternating current electrothermal to concentrate the molecule to be tested.
  9. 根据权利要求6或7所述的电泳方法,其特征在于:微流体扩散距离L为1~100μm。The electrophoresis method according to claim 6 or 7, wherein the microfluid diffusion distance L is from 1 to 100 μm.
  10. 根据权利要求6或7所述的电泳方法,其特征在于:通过给金属电极提供较大电流对微流体腔体内的电解液进行加热,控制温度在20℃~100℃,达到目标分子与探针分离的效果,使生物传感器能够被重复使用。 The electrophoresis method according to claim 6 or 7, wherein the electrolyte in the microfluidic cavity is heated by supplying a large current to the metal electrode, and the temperature is controlled at 20 ° C to 100 ° C to reach the target molecule and the probe. The effect of the separation allows the biosensor to be reused.
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