WO2017200280A1

WO2017200280A1 - Illuminating apparatus using semiconductor light emitting elements

Info

Publication number: WO2017200280A1
Application number: PCT/KR2017/005081
Authority: WO
Inventors: 이성훈; 이학주
Original assignee: 우리이앤엘 주식회사
Priority date: 2016-05-17
Filing date: 2017-05-17
Publication date: 2017-11-23
Also published as: KR20170129410A

Abstract

The present disclosure relates to an illuminating apparatus using semiconductor light emitting elements, comprising a control switch for turning on/off an electrical connection between a bypass current path and an nth semiconductor light emitting element group, and turning off the electrical connection when the voltage of power supply has a value sufficient to allow both an (n-1)th semiconductor light emitting element group and the nth semiconductor light emitting element group to emit light.

Description

Semiconductor light emitting device lighting device

The present disclosure generally relates to a semiconductor light emitting device illuminating device, and more particularly, to a semiconductor light emitting device illuminating device that emits light sequentially according to a change in the voltage of a supplied power source. Here, the semiconductor light emitting device means a semiconductor optical device such as an LED or a laser diode. Of course, the phosphor may be used in combination with the semiconductor light emitting device.

1 is a view showing an example of a semiconductor light emitting device lighting apparatus using a conventional AC power source, the lighting device is an AC power source 100, a resistor 110 for adjusting the voltage of the AC power source 100, and the polarity is reversed And an LED 120 and an LED 130 connected in parallel. The LED 120 emits light when a positive current flows, and the LED 130 emits light when a negative current flows.

2 is a view illustrating another example of a semiconductor light emitting device lighting apparatus using a conventional AC power source. The lighting apparatus includes a rectifier circuit 310, a switching mode power supply 320 including a transformer, and a plurality of light emitting devices. The light emitting unit 340 includes an LED array 330 connected in series and an electromagnetic interference (EMI) filter 350. The switching mode power supply 320 converts power into a suitable form to drive the light emitting unit 340.

3 and 4 are diagrams illustrating an example of a semiconductor light emitting device lighting apparatus using an AC power source disclosed in US Patent Application Publication No. 2010-0194298. The light emitting device 600 includes a rectifier circuit 610 and a control circuit 620. And a plurality of

LED groups

631, 632, 633, 634, and 635 connected in series. The control circuit 620 has switches Q1, Q2, Q3, Q4, Q5, and Q6 that control the

LED groups

631, 632, 633, 634, and 635 to emit light. When the voltage reaches the time T1 and the voltage 20V at which the LED group 631 can be turned on, the switch Q1 is kept in the on state, so that the current passing through the LED group 631 is passed through the switch Q1. The conduction causes the LED group 631 to emit light at a voltage between 20V and 40V. When the time T2 and the voltage 40V at which the LED group 631 and the LED group 632 are turned on are reached, the switch Q1 is turned off and the switch Q2 is kept in the on state, thereby causing the LED group 631 to be turned on. And the current through the LED group 632 conducts through the switch Q2, thereby causing the LED group 631 and the LED group 632 to emit light at a voltage between 40V and 60V. In the same manner, up to the LED group 635 is emitted, and when the voltage decreases, light emission is sequentially decreased by turning on / off the switch. According to such an illumination device, there is an advantage that the entire rectified current can be used for light emission of the light emitting element.

5 to 9 are views showing various examples of the semiconductor light emitting device lighting apparatus shown in US Patent No. 7,439,944. A switch is provided between LED groups to sense a change in voltage and accordingly turn on / off the switch. Various ways of doing this are presented.

This is described later in the section titled 'Details of the Invention.'

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device lighting apparatus, a group of n semiconductor light emitting devices that sequentially emit light according to a change in voltage of a power source connected and supplied in series. (n ≧ 3); an n-2 th current path from the n-2 th semiconductor light emitting device group to the n-1 th semiconductor light emitting device group; an n-1 th current path from the n−1 th semiconductor light emitting device group to the n th semiconductor light emitting device group; a bypass current path branched from the n−2 th current path and bypassing the n−1 th semiconductor light emitting device group; an n-1 th switch positioned on the n-1 th current path and operable to flow a current past the n-1 th semiconductor light emitting group to ground without passing through the n th semiconductor light emitting group; In addition, the on-off electrical connection between the bypass current path and the nth semiconductor light emitting device group may be performed, and the voltage of the supplied power may emit both the n-1th semiconductor light emitting device group and the nth semiconductor light emitting device group. Provided is a semiconductor light emitting device lighting apparatus comprising a; control switch to turn off the electrical connection when the value.

This is described later in the section titled 'Details of the Invention.'

1 is a view showing an example of a semiconductor light emitting device lighting apparatus using a conventional AC power source,

2 is a view showing another example of a semiconductor light emitting device lighting apparatus using a conventional AC power source,

3 and 4 is a view showing an example of a semiconductor light emitting device lighting apparatus using an AC power supply disclosed in US Patent Publication No. 2010-0194298,

5 to 9 are views showing various examples of the semiconductor light emitting device lighting apparatus shown in US Patent No. 7,439,944;

10 is a view showing an example of a semiconductor light emitting device lighting apparatus according to the present disclosure;

11 to 13 are diagrams for explaining an example of the operation of the semiconductor light emitting device lighting apparatus according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

FIG. 10 is a diagram illustrating an example of a semiconductor light emitting device lighting apparatus according to the present disclosure, wherein the semiconductor light emitting device lighting apparatus includes four semiconductor light

emitting device groups

11, 12, 13, and 14 and four

current paths

21 and 22. 23, 24, bypass current path 25, four

switches

31, 32, 33, 34, control switch 35, bypass switch 36, control circuit 40 and blocking means 50 It includes.

The four groups of semiconductor

light emitting devices

11, 12, 13, and 14 may be formed of LEDs, and each of the groups of semiconductor

light emitting devices

11, 12, 13, and 14 may be formed of at least one LED. The semiconductor light emitting device lighting apparatus according to the present disclosure may be composed of n groups (n ≧ 3), and the n−1 th semiconductor light emitting device group and the n th semiconductor light emitting device group may be driven at the same voltage in parallel connection. It is preferred to consist of a number of LEDs.

In the four

current paths

21, 22, 23, and 24, the first current path 21 extends from the first semiconductor light emitting device group 11 to the second semiconductor light emitting device group 12, thereby electrically connecting both. And a second current path 22 extends from the second semiconductor light emitting device group 12 to the third semiconductor light emitting device group 13, thereby electrically connecting both, and the third current path 23. Is connected from the third semiconductor light emitting device group 13 to the fourth semiconductor light emitting device group 14 to electrically connect both, and the fourth current path 24 is connected from the fourth semiconductor light emitting device group 14. It leads to ground (not shown). When n (n≥3) groups of semiconductor light emitting devices are provided, n current paths may be provided correspondingly.

The bypass current path 25 is a current path branched from the second current path 22 to bypass the third semiconductor light emitting element group 13. When n (n≥3) groups of semiconductor light emitting devices are provided, the bypass current path 25 is branched from the n-2th current path, thereby bypassing the n-1th semiconductor light emitting device group.

In the four

switches

31, 32, 33, 34, the first switch 31 is located on the first current path 21, so that the current passing through the first group of semiconductor light emitting elements 11 is emitted by the second semiconductor. Can operate to flow to ground (not shown) without passing through the device group 12, the second switch 32 is located on the second current path 22, the second semiconductor light emitting device group 12 Can be operated to flow to the ground (not shown) without passing through the third semiconductor light emitting element group 13, the third switch 33 is located on the third current path 23, The current passing through the first semiconductor light emitting device group 13 may be operated to flow to the ground (not shown) without passing through the fourth semiconductor light emitting device group 14, and the fourth switch 34 may operate in the fourth current path ( 24 on and off the fourth current path 24 to pass through the fourth group of semiconductor light emitting elements 14. The current may be operated to flow to the ground (not shown), and may be omitted when the amount of current adjustment is not required. When n (n ≧ 3) groups of semiconductor light emitting devices are provided, n switches may be provided correspondingly, and the n th switch may be omitted.

The control switch 35 turns the electrical connection between the bypass current path 25 and the fourth semiconductor light emitting device group 14 on and off, and the voltage of the supplied power source 1 is equal to the third semiconductor light emitting device group 13. The electrical connection can be turned off when the fourth semiconductor light emitting group 14 is at a value capable of emitting all of them. When n (n≥3) groups of semiconductor light emitting devices are provided, the control switch 35 turns on and off the electrical connection between the bypass current path and the nth semiconductor light emitting device group, and the voltage of the power source 1 supplied. When the n-1th semiconductor light emitting device group and the nth semiconductor light emitting device group are both at a value capable of emitting light, the electrical connection can be turned off. The power supply 1 is rectified through a rectifying circuit (not shown) such as a bridge diode, and is supplied to the four semiconductor light

emitting element groups

11, 12, 13, and 14.

The bypass switch 36 may be provided separately from the fourth switch 34 so that current passing through the fourth group of semiconductor light emitting elements 14 flows when the electrical connection is turned on (when the control switch 35 is turned on). . When n (n≥3) groups of semiconductor light emitting devices are provided, they are provided on the nth current path.

The control circuit 40 (e.g. IC circuit) controls the overall operation of the semiconductor light emitting device lighting apparatus according to the present disclosure, and the current flowing through the four

current paths

21, 22, 23, 24 and the bypass current path 25. Can be operated to adjust. The control circuit 40 may include four

switches

31, 32, 33, 34 as part.

The blocking means 50 is provided on the third current path 23 to block the current passing through the bypass current path 25 to the third semiconductor light emitting element group 13. When n (n≥3) groups of semiconductor light emitting devices are provided, the current passing through the bypass current path 25 is blocked from flowing to the n-1 th semiconductor light emitting device group. For example, a switch structure of the type shown in FIG. 5 may be used as a structure (transistor switch, OP-amp, sensing resistor) of four

switches

31, 32, 33, 34 and bypass switch 36. The control switch 35 may be composed of transistors such as BJT, JFET, MOSFET. Since the blocking means 50 is effective only when the blocking means 50 is blocked in the direction opposite to the flow of the main current, the blocking means 50 may be implemented using a unidirectional diode. For example, a schottky diode with a small forward turn-on voltage can be used. This is because the larger the forward turn-on voltage, the larger the turn-on mismatch between the third semiconductor light emitting device group (13) and the fourth semiconductor light emitting device group (14), which has a small negative effect on the luminous efficiency.

11 to 13 are diagrams for explaining an example of the operation of the semiconductor light emitting device lighting apparatus according to the present disclosure. As shown in FIG. 11, the voltage of the power source 1 to be supplied is increased, and thus, time T1. When the first switch 31 (ID1; see Fig. 10) is kept in the On state, as shown in Fig. 12, the first semiconductor light emitting element group 11 emits light.

When the time T2 is reached, the second switch 32 (ID2) is in the On state, and the first switch 31 (ID1) is in the Off state, so that the first semiconductor light emitting element group 11 and the second semiconductor light emission are made. The element group 12 emits light.

When time T3 is reached, the third switch 33 (ID3) is in the On state, and the first switch 31 (ID1) and the second switch 32 (ID2) are in the Off state, and the first semiconductor light emitting element The group 11, the second semiconductor light emitting device group 12, and the third semiconductor light emitting device group 13 emit light, and a current flows in the path Path 1. At the same time, when the control switch 35 and the bypass switch 35 (ID3 ') are in the ON state (the bypass switch 35 (ID3') is not provided separately, the control switch 35 and the fourth switch 34 ID4 is in the ON state), the fourth semiconductor light emitting element group 14 also emits light, and a current flows in the path Path 2.

When time T4 is reached, the fourth switch 34 (ID4) is in the ON state, and the first switch 31 (ID1), the second switch 32 (ID2), and the third switch 33 (ID3) are in the OFF state. The first semiconductor light emitting device group 11, the second semiconductor light emitting device group 12, the third semiconductor light emitting device group 13 and the fourth semiconductor light emitting device group 14 emit light, and the path (Path) 3) current flows. With this, the control switch 35 and the bypass switch 35 (ID3 ') are in the off state (when the bypass switch 35 (ID3') is not provided separately, the control switch 35 is in the off state. ).

As the voltage decreases, on the contrary, the four groups of semiconductor

light emitting elements

11, 12, 13, and 14 stop emitting light.

Initially, if the four

switches

31, 32, 33, 34 and the bypass switch 36 are in the On state, as the voltage rises, the first switch 31 (ID1) moves to the second switch 32 (ID2). The second switch 32 (ID2) may be turned off by receiving the flowing current or voltage information S1, and the second switch 32 (ID2) may be turned off by receiving the current or voltage information S2 flowing through the third switch 33 (ID3). The switch 33 (ID3) and the bypass switch 36 (ID3 ') may be turned off by receiving current or voltage information S3 and S4 flowing through the fourth switch 34 (ID4). Meanwhile, when the third semiconductor light emitting device group 13 emits light, the control circuit 40 may turn on the control switch 35 by receiving current or voltage information S5 of the third current path 23. The control switch 35 may be turned off by receiving the current or voltage information S6 flowing through the fourth current path 24. Sensing the voltage and current of the input power source 1, sensing the voltage and current on each current path, controlling the on-off timing of each switch, and the like are well known techniques, as shown in FIGS. 3 to 9. And various techniques related thereto are disclosed in US Patent Publication No. 2010-0194298 and US Patent Publication No. 7,439,944 and the like.

As shown in FIG. 13, in the period starting from the time T2, the value of the current flowing through the third semiconductor light emitting device group 13 and the value of the current flowing through the fourth semiconductor light emitting device group 14 are The third semiconductor light emitting element group 13 and the fourth are controlled by the control circuit 40 so as to have a value smaller than the value of the input current. When the semiconductor light emitting device group 14 has the same number of semiconductor light emitting devices or the same driving voltage, both of them have the same light output, thereby reducing the light emission variation. In addition, when driven at a high power, it is possible to reduce the amount of current flowing through the third semiconductor light emitting device group 13 and the fourth semiconductor light emitting device group 14 in a section starting from the time T2. It is possible to reduce the phenomenon of the light output droop of the light emitting device.

Hereinafter, various embodiments of the present disclosure will be described.

(1) A semiconductor light emitting device illuminating device, comprising: n groups of semiconductor light emitting elements (n≥3) which emit light sequentially in accordance with a change in the voltage of a power source connected and supplied in series; an n-2 th current path from the n-2 th semiconductor light emitting device group to the n-1 th semiconductor light emitting device group; an n-1 th current path from the n−1 th semiconductor light emitting device group to the n th semiconductor light emitting device group; a bypass current path branched from the n−2 th current path and bypassing the n−1 th semiconductor light emitting device group; an n-1 th switch positioned on the n-1 th current path and operable to flow a current past the n-1 th semiconductor light emitting group to ground without passing through the n th semiconductor light emitting group; In addition, the on-off electrical connection between the bypass current path and the nth semiconductor light emitting device group may be performed, and the voltage of the supplied power may emit both the n-1th semiconductor light emitting device group and the nth semiconductor light emitting device group. And a control switch to turn off the electrical connection when the value is at a value.

(2) When the electrical connection is turned on, the value of the current flowing through the n-1th semiconductor light emitting device group and the value of the current flowing through the nth semiconductor light emitting device group are controlled to have a value smaller than that of the input current, respectively. The semiconductor light emitting device lighting apparatus comprising a.

And (3) a bypass switch through which current passes through the nth group of semiconductor light emitting devices when the electrical connection is turned on.

(4) When the electrical connection is turned on, the value of the current flowing through the n-th semiconductor light emitting device group and the value of the current flowing through the n-th semiconductor light emitting device group each have a value of 1/2 of the value of the input current. The semiconductor light emitting device lighting apparatus comprising a; control circuit to control so that.

And (5) blocking means positioned on the n-1 th current path to block the current passing through the bypass current path to the n-1 th semiconductor light emitting device group.

(6) a control circuit for controlling the value of the current flowing through the n-th semiconductor light emitting device group to have a greater value than the value of the current flowing through the n-th semiconductor light emitting device group when the electrical connection is on; Semiconductor light emitting device lighting apparatus comprising a.

(7) When the electrical connection is turned on, the n-1 th semiconductor light emitting device group and the n th semiconductor light emitting device group are connected in parallel, and when the electrical connection is turned off, the n-1 th semiconductor light emitting device group and the n th semiconductor light emitting device group The semiconductor light emitting device illuminating device, characterized in that connected in series.

And (8) the bypass current path comprises: blocking means located on the n-1th current path to block the past current from flowing into the n-1th semiconductor light emitting device group.

According to one semiconductor light emitting device lighting apparatus according to the present disclosure, a plurality of groups of semiconductor light emitting devices can be sequentially emitted in accordance with a change in the voltage of a supplied power source.

According to another semiconductor light emitting device lighting apparatus according to the present disclosure, even when the voltage of the AC power supply is not constant, the n-th semiconductor light emitting device group can be used for light emission.

According to another semiconductor light emitting device lighting apparatus according to the present disclosure, even when high power is used, it is possible to prevent the droop phenomenon of the semiconductor light emitting device, thereby improving the light efficiency.

According to another semiconductor light emitting device lighting apparatus according to the present disclosure, the power factor can be maintained by adjusting the amount of current supplied to the n-1th semiconductor light emitting device group and the nth semiconductor light emitting device group connected in parallel smaller than the input current amount. Will be. This is possible by independently forming the current flow path of the n-th semiconductor light emitting device group and the current flow path of the n-th semiconductor light emitting device group.

Claims

In the semiconductor light emitting device illumination device,

A group of n semiconductor light emitting elements n ≥ 3 sequentially emitting light according to a change in voltage of a power source connected and supplied in series;

an n-2 th current path from the n-2 th semiconductor light emitting device group to the n-1 th semiconductor light emitting device group;

an n-1 th current path from the n−1 th semiconductor light emitting device group to the n th semiconductor light emitting device group;

a bypass current path branched from the n−2 th current path and bypassing the n−1 th semiconductor light emitting device group;

an n-1 th switch positioned on the n-1 th current path and operable to flow a current past the n-1 th semiconductor light emitting group to ground without passing through the n th semiconductor light emitting group; And,

The electrical connection between the bypass current path and the nth semiconductor light emitting device group is turned on and off, and the voltage of the supplied power source can emit both the n-1th semiconductor light emitting device group and the nth semiconductor light emitting device group. And a control switch to turn off the electrical connection when there is a semiconductor light emitting device lighting apparatus.
The method according to claim 1,

When the electrical connection is turned on, a control circuit for controlling the value of the current flowing through the n-th semiconductor light emitting device group and the value of the current flowing through the n-th semiconductor light emitting device group to have a value smaller than that of the input current, respectively. Semiconductor light emitting device lighting apparatus comprising a.
The method according to claim 2,

And a bypass switch through which current passes through the nth group of semiconductor light emitting devices when the electrical connection is turned on.
The method according to claim 1,

When the electrical connection is turned on, the value of the current flowing through the n-th semiconductor light emitting device group and the value of the current flowing through the n-th semiconductor light emitting device group are controlled to have a value of 1/2 of the value of the input current, respectively. A semiconductor light emitting device lighting apparatus comprising a.
The method according to claim 1,

And blocking means positioned on the n-1 th current path to block the current passing through the bypass current path to the n-1 th semiconductor light emitting device group.
The method according to claim 1,

And a control circuit for controlling a value of a current flowing through the nth semiconductor light emitting device group when the electrical connection is turned on to have a greater value than a current flowing through the nth semiconductor light emitting device group when the electrical connection is turned off. Semiconductor light emitting device lighting apparatus characterized in that.
The method according to claim 6,

The control circuit controls the value of the current flowing through the n-1th semiconductor light emitting device group and the value of the current flowing through the nth semiconductor light emitting device group when the electrical connection is turned on to have a value smaller than that of the input current, respectively. Semiconductor light emitting device lighting apparatus characterized in that.
The method according to claim 1,

When the electrical connection is on, the n-1th semiconductor light emitting device group and the nth semiconductor light emitting device group are connected in parallel, and when the electrical connection is off, the n-1th semiconductor light emitting device group and the nth semiconductor light emitting device group are connected in series. Semiconductor light emitting device lighting apparatus characterized in that the.
The method according to claim 7,

When the electrical connection is on, the n-1th semiconductor light emitting device group and the nth semiconductor light emitting device group are connected in parallel, and when the electrical connection is off, the n-1th semiconductor light emitting device group and the nth semiconductor light emitting device group are connected in series. Semiconductor light emitting device lighting apparatus characterized in that the.
The method according to claim 9,

And the bypass current path includes blocking means positioned on the n−1 th current path to block a current flowing through the n−1 th semiconductor light emitting device group.