WO2017196737A1 - Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display - Google Patents

Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display Download PDF

Info

Publication number
WO2017196737A1
WO2017196737A1 PCT/US2017/031574 US2017031574W WO2017196737A1 WO 2017196737 A1 WO2017196737 A1 WO 2017196737A1 US 2017031574 W US2017031574 W US 2017031574W WO 2017196737 A1 WO2017196737 A1 WO 2017196737A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
laser
row
grains
properties
Prior art date
Application number
PCT/US2017/031574
Other languages
French (fr)
Inventor
Florian Huber
Alexander LIMANOV
Michael Von Dadelszen
Dan Perlov
Edward Tsidilkovski
John Hicks
Original Assignee
Ipg Photonics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ipg Photonics Corporation filed Critical Ipg Photonics Corporation
Priority to KR1020187032262A priority Critical patent/KR20190005862A/en
Priority to EP17796633.0A priority patent/EP3433601A4/en
Priority to CN201780028544.0A priority patent/CN109154562A/en
Priority to JP2018558430A priority patent/JP2019521321A/en
Priority to US16/301,248 priority patent/US20200321363A1/en
Publication of WO2017196737A1 publication Critical patent/WO2017196737A1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B23K26/0821—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head using multifaceted mirrors, e.g. polygonal mirror
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/063—Illuminating optical parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/105—Purely optical scan

Definitions

  • This disclosure relates to the fabrication of flat panel displays. More particularly, the disclosure relates a laser-based method and system for determining optical homogeneity of polysilicon ( ⁇ -Si) films on quartz substrate manufactured by a low-temperature polysilicon annealing (LTPS) method.
  • LTPS low-temperature polysilicon annealing
  • the Flat Panel Display (FPD) fabrication environment is among the world's most competitive and technologically complex.
  • the thin film transistor (TFT) technology is the basis for the FPD that can be either high-resolution, high-performance liquid crystal display (LCD), as shown in FIG. 1, or organic light emitting diode (OLED) which is of a particular interest here.
  • the TFT display circuits are made on a thin semi-transparent layer of amorphous silicon ("a- silicon or a-Si”) and arranged in a backplane across the layer to correspond to respective pixels.
  • a-Si is initially thermally treated to convert into liquid amorphous Si, and then it is maintained in the molten state for a certain period of time.
  • the temperature range sufficient to maintain the molten state is selected to allow the initially formed poly- crystallites to grow and crystallize.
  • the LTPS approach is based on two generic methods - Excimer Laser Annealing (ELA) and sequential lateral solidification (SLS). The latter is the method used for producing p-Si films of this disclosure and is described in detail in co-owned U.S. Application 14790170 incorporated here in its entirety.
  • the active matrix organic light emitting displays are self-emissive devices outputting light by applying an electrical signal to colored organic or polymer material.
  • OLED are current driven devices whereas the LCD technology is voltage driven.
  • a uniform and stable threshold voltage (Vth) distribution of the thin film transistors (TFT) on the active matrix (AM) is essential for a good visual impression to the human eye. Therefore, the lifetime of an AM OLED is not only determined by the light emitting material but also by the reliability of the p-Si backplanes.
  • the required high TFT Vth uniformity is thus a prerequisite for p-Si films with a higher degree of crystal homogeneity compared to a common LCD LTPS backplane.
  • the step of making p-Si films on glass is one of the earliest stages of the entire OLED FPD manufacturing process. Thus even if all later process stages are impeccably performed, inevitable yield losses will be due to excursions when this fundamental p-Si forming step shifts out of specification.
  • FIG. 1A is an image of laser annealed p-Si sample
  • FIG. IB is a low-resolution microscopy image of the sample
  • FIG. 1C is a diagrammatic illustration of a two-row laser annealed p-Si sample with each row being defined by a plurality of grains;
  • FIG. ID is a diagrammatic top view of individual grain
  • FIG. 2 is the optical schematic of the inventive system
  • FIG. 3 is a front view of the sample illustrating a scanning direction of used in the inventive schematic of FIG. 3;
  • FIG. 4 is an optical schematic of system for determining a diffraction angle used in the system of FIG. 2;
  • FIG. 5 is a raw image of one sample processed by the system of FIG. 2 with a 0.7 mm laser beam
  • FIG. 6 is a scale illustrating the strength of the diffraction grating used in processing the sample of FIG. 5;
  • FIG. 7 is a raw image of another sample processed by the system of FIG. 2 with a 2 mm laser beam;
  • FIG. 8 is a scale illustrating the strength of the diffraction grating used in processing the sample of FIG. 7;
  • FIG. 9 A is spatial grating strength distribution over several rows obtained with a 0.7 mm laser beam
  • FIG. 9B is spatial grating strength distribution over a single row obtained with a 0.7 mm laser beam
  • FIG. 1 OA is spatial grating strength distribution over several rows obtained with a 2 mm laser beam
  • FIG. 10B is spatial grating strength distribution over a single row obtained with a 2 mm laser beam
  • FIG. 11 is an orthogonal view of the disclosed laser annealing system.
  • the presence of the diffraction grating indicates that morphological characteristics, i.e., certain properties characterizing p-Si film 10 can be be measured. Based on these
  • an acceptable range can be established and used in a mass-producing laser annealing apparatus to sort out 'good panels", i.e., panels characterized by the desired acceptable degree of optical inhomogeneity.
  • the latter is critical to the uniformity of electrical mobility of charge carries and ultimately to the desired performance of FPD.
  • the topography of the magnified image of p-Si film 10 includes multiple rows 12 abutting one another in the A-A direction, i.e., along a length Lr of the abutted side-by-side rows 12.
  • each row 12 generally has a uniform rectangular cross-section with a row width Wr.
  • FIG. 1C is highly diagrammatic of film 10 shown to have two rows 12.
  • the crystalline structure of p-Si is diagrammatically shown to have a plurality of grains 14 each with rather an ideal rectangular shape. In reality, the shape may differ from the shown shape. However, ideal or not, grains 14 each have a grain width Wg and length Lg both better seen in single grain 14 of FIG. ID.
  • the length Lr of row 12 is a sum of widths Wg of respective grains 14.
  • the length of grains Lg is uniform for all grains; it corresponds to the long axis of the annealing beam, used in the laser annealing system, and thus defines the width Wr of each row 12.
  • FIG. 2 illustrates the inventive system 20 configured to measure morphological characteristics of p-Si film 10.
  • the latter is characterized by a crystalline structure defined by at least one row 12 of abutted long sides Lg of adjacent grains 14. The diffraction of various orders is created along the row length (Lr).
  • the system 20 is capable of measuring the power of diffracted light indicative of the grating's strength.
  • the system 20 includes a laser source 22, which can be configured to operate in a continuous wave (CW), quasi-CW or pulsed regimes, outputs a monochromatic or very narrowband light beam 24 at any desired wavelength, for example, 532 nm.
  • beam 24 has a 40 ⁇ beam diameter.
  • the beam 24 is focused onto the surface of sample 10 and has a footprint which is related to a desired spatial resolution of the measurement of variation of properties.
  • the focused incident beam 24 impinges the ridges of the periodic structure, i.e. diffraction grating, at an angle.
  • the ridges are formed at the interface between adjacent grains of the same row.
  • the diffracted beams are measured to determine respective intensities of any- order diffraction peak, for example first-order diffraction peak .
  • an angle of incidence is about 50°. In general, this angle may vary between Oo and grazing angle.
  • the angle is selected so as to avoid artifacts caused by multiple reflections of the glass substrate.
  • the photo-sensor 26 is used for measurement of the grating spatial strength and can be selected from a photodiode or CCD depending on the scanning scheme.
  • the data based on measurements is collected in a central processing unit 28 where it is stored, processed and displayed to characterize the degree of optical inhomogeneity of film 10. This data then can be used to determine a range of acceptable parameters used in mass production by a laser annealing process as discussed herein in reference to FIG. 11.
  • the multiplicity of grains 14 defining the length Lr of row 12 is formed as a result of scanning the surface of sample 14 in the longitudinal direction Y of FIG. 3.
  • sample 10 is placed on a two dimensional translation stage supporting the laser annealed film.
  • the stage displaces the sample relative to beam 24 which raster-scans the desired area of film 10 defined by illuminated rows 14.
  • the raster-scanning may be performed by means of well- known techniques that allow the beam to be displaced relative to the sample or move both the sample and beam in opposite direction along the Y ordinate of FIG. 3.
  • the known scanning techniques may include a galvanometer, scanning polygon, or acousto-optic deflector in conjunction with photodiode 26.
  • the desired area of the laser-annealed film can be imaged by a lens onto a pixel detector, such as CCD, at a desired diffraction order. Doing so generates a map of measured properties of the diffracted light which include a diffraction efficiency, diffraction angle corresponding to the number of illuminating arrays and polarization state of the diffracted light.
  • a pixel detector such as CCD
  • the device and process steps performed by system 20 used in numerous experiments are based on the measurement of the intensity of the diffracted light in the first-order diffraction peak. This is done at an angle of incidence of about 50° in order to avoid artifacts caused by multiple reflections of the glass substrate.
  • the back surface of the samples is blackened with removable paint. The sample is then scanned in the sample plane.
  • the disclosed concept of course includes analyzing the periodic structure.
  • system 20 of FIG. 3 has been slightly modified for measurement of the angles 9j of the ( ⁇ ) first diffraction orders in reflection and transmission for normal incidence of a 543 inn laser beam.
  • the spacing d of the grating relates to the diffraction as follows:
  • the calculated grating spacing here is 0.70 ⁇ , which is identical to the microscopically detemiined value.
  • FIG. 5 and 7 relate to post-processing the image by utilizing a high-pass filter with a spatial cut-off frequency of about 1mm to reduce errors caused an imperfectly flat sample.
  • FIGs. 5 and 7 show respective raw images of the two processed samples with 0.7mm (FIG. 5) and 2mm beam size (FIG. 7). The shown samples are accompanied by respective scales of FIGs. 6 and 8 representing respective grating scales.
  • FIGs. 9 A - 9B and 10A - 10B provide visualization of the spatial grating strength distributions of the samples shown on respective FIGs 5 and 7. Referring specifically to FIG. 9 A, the image of the sample of FIG.
  • FIG. 5 corresponds to results obtained while scanning the desired area of the film which includes a multiplicity of rows 14 of FIG. 5 with a 0.7 mm laser beam.
  • FIG. 9B shows the results based on raster-scanning of single row 14 with the same 0.7. mm beam.
  • FIGs. 10A and 10B illustrate respective results of the multi-row scanned area and single row area with a 2 mm laser beam corresponding to the images on FIGs. 7 and 8.
  • the above disclosed steps of disclosed processed samples of FIGS. 2, 7 and 9A through 10B are summarized in the following table illustrating quantitative measurements upon comparing the grating strengths of respective samples of FIGs. 5 and 7.
  • the above disclosed method and system may function as a stand-alone device for determining morphological characteristics of p-Si films annealed by laser annealing system 50, which is disclosed in detail in US Patent Application No
  • system 20 and its modifications maybe incorporated in system 50.
  • the latter includes a laser source (not shown) outputting a pulsed beam.
  • the beam is guided along a beam path through several optical units some of them are briefly disclosed.
  • the beam is guided through a coUimating unit operative to sequentially coUimate the pulsed light beam along short and long axes thereof.
  • the collimated beam is homogenized in a unit operative to provide the uniform linear beam directed and focused at a mask plane which is immediately before the mask.
  • the film of a-Si to be converted into a p-Si is placed on a stage providing relative displacement between the beam and film.
  • it may be position so as to provide coupling of the laser beam 24 (FIG.
  • optical inhomogeneity can be potentially minimized by reducing the peak- to-peak variation between adjacent grains 14, and/or possibly by breaking the periodicity of the structure by randomizing the step size.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Recrystallisation Techniques (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

A method of measuring morphological characteristics of a laser annealed film having a crystalline structure, which is defined by at least one row of side-to-side positioned grains each having a length (Lg), which is uniform for the grains, and width (Wg), wherein a length of the row (Lr) corresponds to a cumulative width Wg of the grains and creates a diffraction of various orders of diffraction, the method includes generating a monochromatic light; training the monochromatic light onto a surface of the laser annealed film at an angle varying in a range between 0° (incident) and grazing angles; and measuring variations of properties of the monochromatic light diffracted from the surface, thereby measuring the morphological characteristics of the laser annealed film along the length (Lr) of the one row.

Description

PROCESS AND SYSTEM FOR MEASURING MORPHOLOGICAL CHARACTERISTICS OF FIBER LASER ANNEALED POLYCRYSTALLINE SILICON
FILMS FOR FLAT PANEL DISPLAY
BACKGROUND OF THE INVENTION
Field of the Invention
[0001] This disclosure relates to the fabrication of flat panel displays. More particularly, the disclosure relates a laser-based method and system for determining optical homogeneity of polysilicon (ρ-Si) films on quartz substrate manufactured by a low-temperature polysilicon annealing (LTPS) method.
Prior Art Discussion
[0002] The Flat Panel Display (FPD) fabrication environment is among the world's most competitive and technologically complex. The thin film transistor (TFT) technology is the basis for the FPD that can be either high-resolution, high-performance liquid crystal display (LCD), as shown in FIG. 1, or organic light emitting diode (OLED) which is of a particular interest here. The TFT display circuits are made on a thin semi-transparent layer of amorphous silicon ("a- silicon or a-Si") and arranged in a backplane across the layer to correspond to respective pixels.
[0003] The industry realized that using poly-Si, which has the carrier mobility approximately two orders of magnitude greater than that of a-Si, substantially reduces the pixel size, improves the aperture ratio, and pixel resolution. As a result of these properties of poly-Si, portable/ mobile electronic devices now feature high resolution flat panel displays.
[0004] There are two fundamentally different approaches for converting the a-Si into poly-Si through crystallization (annealing). One is a thermal annealing (TA) approach, and the other is a low-temperature poly-silicon annealing (LTPS) approach, which is part of the subject matter of this disclosure. In the latter, a-Si is initially thermally treated to convert into liquid amorphous Si, and then it is maintained in the molten state for a certain period of time. The temperature range sufficient to maintain the molten state is selected to allow the initially formed poly- crystallites to grow and crystallize. The LTPS approach is based on two generic methods - Excimer Laser Annealing (ELA) and sequential lateral solidification (SLS). The latter is the method used for producing p-Si films of this disclosure and is described in detail in co-owned U.S. Application 14790170 incorporated here in its entirety.
[0005] The active matrix organic light emitting displays (AM OLED) are self-emissive devices outputting light by applying an electrical signal to colored organic or polymer material. Hence, OLED are current driven devices whereas the LCD technology is voltage driven. A uniform and stable threshold voltage (Vth) distribution of the thin film transistors (TFT) on the active matrix (AM) is essential for a good visual impression to the human eye. Therefore, the lifetime of an AM OLED is not only determined by the light emitting material but also by the reliability of the p-Si backplanes. The required high TFT Vth uniformity is thus a prerequisite for p-Si films with a higher degree of crystal homogeneity compared to a common LCD LTPS backplane.
[0006] The step of making p-Si films on glass is one of the earliest stages of the entire OLED FPD manufacturing process. Thus even if all later process stages are impeccably performed, inevitable yield losses will be due to excursions when this fundamental p-Si forming step shifts out of specification.
[0007] A need therefore exists for a method of quantitatively determining inhomogeneity of a p- Si film.
[0008] Another need exists for a system configured to implement the needed method.
BRIEF DESCRIPTION OF THE DRAWINGS
[0009] The inventive method and system are illustrated by the following drawings, in which:
[0010] FIG. 1A is an image of laser annealed p-Si sample;
[0011] FIG. IB is a low-resolution microscopy image of the sample;
[0012] FIG. 1C is a diagrammatic illustration of a two-row laser annealed p-Si sample with each row being defined by a plurality of grains;
[0013] FIG. ID is a diagrammatic top view of individual grain;
[0014] FIG. 2 is the optical schematic of the inventive system; [0015] FIG. 3 is a front view of the sample illustrating a scanning direction of used in the inventive schematic of FIG. 3;
[0016] FIG. 4 is an optical schematic of system for determining a diffraction angle used in the system of FIG. 2;
[0017] FIG. 5 is a raw image of one sample processed by the system of FIG. 2 with a 0.7 mm laser beam;
[0018] FIG. 6 is a scale illustrating the strength of the diffraction grating used in processing the sample of FIG. 5;
[0019] FIG. 7 is a raw image of another sample processed by the system of FIG. 2 with a 2 mm laser beam;
[0020] FIG. 8 is a scale illustrating the strength of the diffraction grating used in processing the sample of FIG. 7;
[0021] FIG. 9 A is spatial grating strength distribution over several rows obtained with a 0.7 mm laser beam;
[0022] FIG. 9B is spatial grating strength distribution over a single row obtained with a 0.7 mm laser beam;
[0023] FIG. 1 OA is spatial grating strength distribution over several rows obtained with a 2 mm laser beam;
[0024] FIG. 10B is spatial grating strength distribution over a single row obtained with a 2 mm laser beam;
[0025] FIG. 11 is an orthogonal view of the disclosed laser annealing system.
SPECIFIC DESCRIPTION
[0026] Reference will now be made in detail to the disclosed system. Wherever possible, same or similar reference numerals are used in the drawings and the description to refer to the same or like parts or steps. The word "couple" and similar terms do not necessarily denote direct and immediate connections, but also include connections through intermediate elements or devices. The drawings are in simplified form and are far from precise scale. [0027] Referring to FIGs. 1A and IB, laser-annealing of amoiphous Silicon (a-Si) thin-films on Si02 substrate produces a poly-crystalline (p-Si) film 10. This film can be a used as a base material for production of OLED screens.
[0028] By illuminating film 10 with white light under a shallow angle and along the visible lines, a rainbow-like color pattern becomes visible. In particular, under moderate magnification (Leica Z16 APO, coaxial illumination) periodic lines perpendicular to the mm- wide stripes start to emerge (FIG. IB). High magnification (Olympus BX51, transmission and DIC-mode) reveals bands of 0.7 μιη spaced periodic lines, corresponding to the beam shift/step in re-melting process. This pattern suggests an underlying periodic structure in a direction A-A acting as a diffraction grating, the principle of operation of which is well Icnown to one of ordinary skill in the optics.
[0029] The presence of the diffraction grating indicates that morphological characteristics, i.e., certain properties characterizing p-Si film 10 can be be measured. Based on these
measurements, an acceptable range can be established and used in a mass-producing laser annealing apparatus to sort out 'good panels", i.e., panels characterized by the desired acceptable degree of optical inhomogeneity. The latter is critical to the uniformity of electrical mobility of charge carries and ultimately to the desired performance of FPD.
[0030] Referring specifically to FIG. IB, the topography of the magnified image of p-Si film 10 includes multiple rows 12 abutting one another in the A-A direction, i.e., along a length Lr of the abutted side-by-side rows 12. As can be seen, each row 12 generally has a uniform rectangular cross-section with a row width Wr.
[0031] FIG. 1C is highly diagrammatic of film 10 shown to have two rows 12. The crystalline structure of p-Si is diagrammatically shown to have a plurality of grains 14 each with rather an ideal rectangular shape. In reality, the shape may differ from the shown shape. However, ideal or not, grains 14 each have a grain width Wg and length Lg both better seen in single grain 14 of FIG. ID.
[0032] Such a detailed description of the disclosed row and grain geometries is very important for describing the periodic structure i.e., diffraction grating which defines length Lr of each row 12. Returning to FIG. 1C, the length Lr of row 12, thus, is a sum of widths Wg of respective grains 14. The length of grains Lg is uniform for all grains; it corresponds to the long axis of the annealing beam, used in the laser annealing system, and thus defines the width Wr of each row 12.
[0033] FIG. 2 illustrates the inventive system 20 configured to measure morphological characteristics of p-Si film 10. The latter is characterized by a crystalline structure defined by at least one row 12 of abutted long sides Lg of adjacent grains 14. The diffraction of various orders is created along the row length (Lr). The system 20 is capable of measuring the power of diffracted light indicative of the grating's strength.
[0034] The system 20 includes a laser source 22, which can be configured to operate in a continuous wave (CW), quasi-CW or pulsed regimes, outputs a monochromatic or very narrowband light beam 24 at any desired wavelength, for example, 532 nm. Given only as an example, beam 24 has a 40 μιη beam diameter. The beam 24 is focused onto the surface of sample 10 and has a footprint which is related to a desired spatial resolution of the measurement of variation of properties. The focused incident beam 24 impinges the ridges of the periodic structure, i.e. diffraction grating, at an angle. The ridges are formed at the interface between adjacent grains of the same row. The diffracted beams are measured to determine respective intensities of any- order diffraction peak, for example first-order diffraction peak . In the experiments an angle of incidence is about 50°. In general, this angle may vary between Oo and grazing angle.
Preferably the angle is selected so as to avoid artifacts caused by multiple reflections of the glass substrate.
[0035] The photo-sensor 26 is used for measurement of the grating spatial strength and can be selected from a photodiode or CCD depending on the scanning scheme. The data based on measurements is collected in a central processing unit 28 where it is stored, processed and displayed to characterize the degree of optical inhomogeneity of film 10. This data then can be used to determine a range of acceptable parameters used in mass production by a laser annealing process as discussed herein in reference to FIG. 11.
[0036] The multiplicity of grains 14 defining the length Lr of row 12 is formed as a result of scanning the surface of sample 14 in the longitudinal direction Y of FIG. 3. In the tests, sample 10 is placed on a two dimensional translation stage supporting the laser annealed film. The stage displaces the sample relative to beam 24 which raster-scans the desired area of film 10 defined by illuminated rows 14. However, the raster-scanning may be performed by means of well- known techniques that allow the beam to be displaced relative to the sample or move both the sample and beam in opposite direction along the Y ordinate of FIG. 3. The known scanning techniques may include a galvanometer, scanning polygon, or acousto-optic deflector in conjunction with photodiode 26.
[0037] The desired area of the laser-annealed film can be imaged by a lens onto a pixel detector, such as CCD, at a desired diffraction order. Doing so generates a map of measured properties of the diffracted light which include a diffraction efficiency, diffraction angle corresponding to the number of illuminating arrays and polarization state of the diffracted light. The components necessary to measure the above-listed properties are well known to one of ordinary skill in the art.
[0038] The device and process steps performed by system 20 used in numerous experiments are based on the measurement of the intensity of the diffracted light in the first-order diffraction peak. This is done at an angle of incidence of about 50° in order to avoid artifacts caused by multiple reflections of the glass substrate. To further reduce interference effects, the back surface of the samples is blackened with removable paint. The sample is then scanned in the sample plane.
[0039] The disclosed concept of course includes analyzing the periodic structure. In particular, as seen in FIG. 4, system 20 of FIG. 3 has been slightly modified for measurement of the angles 9j of the (±) first diffraction orders in reflection and transmission for normal incidence of a 543 inn laser beam. The spacing d of the grating relates to the diffraction as follows:
ίλ
sin θί =—
1 d
The calculated grating spacing here is 0.70 μηι, which is identical to the microscopically detemiined value.
[0040] FIG. 5 and 7 relate to post-processing the image by utilizing a high-pass filter with a spatial cut-off frequency of about 1mm to reduce errors caused an imperfectly flat sample. In particular, FIGs. 5 and 7 show respective raw images of the two processed samples with 0.7mm (FIG. 5) and 2mm beam size (FIG. 7). The shown samples are accompanied by respective scales of FIGs. 6 and 8 representing respective grating scales. [0041] FIGs. 9 A - 9B and 10A - 10B provide visualization of the spatial grating strength distributions of the samples shown on respective FIGs 5 and 7. Referring specifically to FIG. 9 A, the image of the sample of FIG. 5 corresponds to results obtained while scanning the desired area of the film which includes a multiplicity of rows 14 of FIG. 5 with a 0.7 mm laser beam. FIG. 9B shows the results based on raster-scanning of single row 14 with the same 0.7. mm beam. FIGs. 10A and 10B illustrate respective results of the multi-row scanned area and single row area with a 2 mm laser beam corresponding to the images on FIGs. 7 and 8. The above disclosed steps of disclosed processed samples of FIGS. 2, 7 and 9A through 10B are summarized in the following table illustrating quantitative measurements upon comparing the grating strengths of respective samples of FIGs. 5 and 7.
[0042] Table 1 :
Sample A Sample B
Line width (mm) 0.7 2.0
Step size (urn) 0.7 0.7
Diffraction angle (R+1) (°) 50.9 50.4
RMS diffraction (a.u.) 951 347
Line average p-p (a.u.) 80 198
Line average std. dev. (a 20 52
Where p-p is peak to peak and a.u -arbitrary units.
[0043] Referring now to FIG. 11, the above disclosed method and system may function as a stand-alone device for determining morphological characteristics of p-Si films annealed by laser annealing system 50, which is disclosed in detail in US Patent Application No
Alternatively, system 20 and its modifications maybe incorporated in system 50. The latter includes a laser source (not shown) outputting a pulsed beam. The beam is guided along a beam path through several optical units some of them are briefly disclosed. First, the beam is guided through a coUimating unit operative to sequentially coUimate the pulsed light beam along short and long axes thereof. Thereafter the collimated beam is homogenized in a unit operative to provide the uniform linear beam directed and focused at a mask plane which is immediately before the mask. The film of a-Si to be converted into a p-Si is placed on a stage providing relative displacement between the beam and film. [0044] Returning to inventive system 20, it may be position so as to provide coupling of the laser beam 24 (FIG. 3) to the ablated/crystalized part of amorphous opposing the film. This scheme allows detecting certain properties of already crystallized part that are not within the established specification or range. If a small portion of the entire film is determined to have the properties which are out of the specification, it is possible to provide a feedback to annealing system's components and adjust the "bad" properties basically in real time. Such an approach would allow the rest of the "good" film to be further used in the process of manufacturing FPD. If, however, a larger portion of the entire film is determined to be unsatisfactory, this film can be discarded in its entirety preventing thus losses which would otherwise be incurred regardless of how well the rest of the FPD manufacturing goes. Alternatively, it is known that system 50 is typically adjusted on a regular basis. In this case the calibrating sample processed by system 20 is used to adjust the parameters of system 50.
[0045] In summary, optical inhomogeneity can be potentially minimized by reducing the peak- to-peak variation between adjacent grains 14, and/or possibly by breaking the periodicity of the structure by randomizing the step size.
[0046] Having described at least one of the preferred embodiments of the present disclosure with reference to the accompanying drawings, it is to be understood that the disclosure is not limited to those precise embodiments, and that various changes, modifications, and adaptations may be effected therein by one skilled in the art without departing from the scope or spirit of the disclosure as defined in the appended claims.

Claims

1. A method of measuring morphological characteristics of a laser annealed film having a crystalline structure, which is defined by at least one row of side-to-side positioned grains each having a length (Lg), which is uniform for the grains, and width (Wg), wherein a length of the row (Lr) corresponds to a cumulative width Wg of the grains and creates a diffractions having various orders, the method comprising:
generating a monochromatic light;
training the monochromatic light onto a surface of the laser annealed film at an angle varying in a range between 0° (incident) and grazing angles; and
measuring variations of properties of the monochromatic light diffracted from the surface, thereby measuring the morphological characteristics of the laser annealed film along the length (Lr) of the one row.
2. The method of one of the above claims, wherein the film is a polysilicon (p-Si) film and has an array of one and additional rows cumulatively defining a desired area of the laser annealed film and adjoined in the row width Wr and the row length Lr.
3. The method of one of the above claims further comprising raster-scanning the desired area of the laser annealed film with the trained monochromatic light having a footprint which is related to a desired spatial resolution of the measurement of variation of properties.
4. The method of one of the above claims further comprising illuminating the desired area of the laser-annealed film to be imaged onto a pixel detector at a desired diffraction order, thereby measuring the variations.
5. The method of claim 4, wherein illuminating the desired area includes imaging of the diffracted order of the trained monochromatic light.
6. The method of one of the above claims further comprising generating a map of measured properties of the diffracted light, wherein the properties include a diffraction efficiency, diffraction angle corresponding to a number of illuminating arrays and polarization state of the diffracted light.
7. The method of one of the above claims further comprising determining a tolerance range of the measured properties of the diffracted light.
8. The method of claim 7 further comprising determining a distributed inhomogeneity (MURA) of a plurality of the laser annealed rows.
9. The method of one of the above claims further comprising:
comparing the measured properties of the laser annealed film during a laser annealing process with the tolerance range, and
generating a control signal interrupting the laser annealing process if any of the measured properties of the diffracted light is outside the tolerance range.
10. The method of claim 8 further comprising:
comparing the measured properties with the tolerance range during a laser annealing process of a part of an amorphous silicon film that has been converted to the p-Si film, while the rest of the film is being annealed, and
generating a control signal in real time if any of the measured properties is outside the tolerance range, and
adjusting parameters of the laser annealing process to bring the properties within the range.
11. A system for measuring morphological characteristics of a laser annealed film having a crystalline structure, which is defined by at least one row of side-to-side positioned grains each having a length (Lg), which is uniform for the grains and defines a width of the row (Wr), wherein a length of the row (Lr) con-esponds to a cumulative width Wg of the grains and defines a diffraction of various orders of diffraction, the system comprising:
a laser source of monochromatic light;
a guiding optics training the monochromatic light onto a surface of the laser annealed film at an angle;
a sensor configured to measure variations of properties of the diffracted monochromatic light and generate a signal; and a processing unit receiving the signal from the sensor and operative to determine the inhomogeneity of grains along the one row.
12. The system of claim 11, wherein the laser source is operative to laser-anneal the film so as to provide an array of rows thereon which cumulatively define a desired area, the rows being adjoined in the row width Wr and the length of the row Lr.
13. The system of claim 11 further comprising a scaimer operative to raster-scan the desired area of the laser annealed film with the trained monochromatic light having a footprint which is related to a desired spatial resolution of the measurement of variation of properties.
14. The system of claim 13, wherein the scanner includes a galvanometer, scanning polygon, or acousto-optic deflector, the sensor being a photodiode.
15. The system of claim 11, wherein the a scanner includes an imaging system, the imaging system being configured with the sensor, including a pixel detector which is spaced from the laser annealed film, and an imaging lens between the desired area, which is illuminated by the monochromatic light, and a lens imaging the illuminated desired area on the pixel detector, wherein the pixel detector is a charge-coupled device (CCD).
16. The system of claim 11, wherein the measured properties of the diffracted light include the measured inhomogeneity of diffraction efficiency, diffraction angle (number of illuminating arrays) and polarization state of the diffracted light.
17. The system of claim 11, wherein the processing unit is operative to determine a tolerance range of the measured inhomogeneity of the properties of the diffracted light.
18. A laser annealing system for annealing an amorphous silicon (a-Si) film on a glass substrate, comprising:
a support underlying the the a-Si film;
a fiber laser source outputting a pulsed light beam; a coUimating unit operative to sequentially collimate the pulsed light beam along short and long axes thereof;
a homogenizing unit operative to process the collimated laser beam so as to provide a uniform linear pulsed beam trained at a mask plane;
a focusing unit operative to focus the uniform linear beam at the mask plane opposing the film;
an actuator operative to provide displacement of the support with the p-Si film and the uniform linear beam relative to one another so that to convert the a-Si film into a film of a polycrystalline silicon (p-Si) crystalline structure, which is defined by at least one row of side-to- side positioned grains each having a length (Lg), which is uniform for the grains, and width (Wg), wherein a length of the row (Lr) corresponds to a cumulative width Wg of the grains and defines a diffraction of various orders of diffraction; and
the system operative to quantitatively determine inhomogeneity of the p-Si film as recited in claims 11-17.
PCT/US2017/031574 2016-05-11 2017-05-08 Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display WO2017196737A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020187032262A KR20190005862A (en) 2016-05-11 2017-05-08 Process and system for measuring morphological characteristics of a fiber laser annealed polycrystalline silicon film on a flat panel display
EP17796633.0A EP3433601A4 (en) 2016-05-11 2017-05-08 Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display
CN201780028544.0A CN109154562A (en) 2016-05-11 2017-05-08 For measuring the process and system of the morphological character of the optical-fiber laser annealed polycrystalline silicon film of flat-panel monitor
JP2018558430A JP2019521321A (en) 2016-05-11 2017-05-08 Process and system for measuring morphological features of fiber laser annealed polycrystalline silicon films for flat panel displays
US16/301,248 US20200321363A1 (en) 2016-05-11 2017-05-08 Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662334881P 2016-05-11 2016-05-11
US62/334,881 2016-05-11

Publications (1)

Publication Number Publication Date
WO2017196737A1 true WO2017196737A1 (en) 2017-11-16

Family

ID=60267515

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2017/031574 WO2017196737A1 (en) 2016-05-11 2017-05-08 Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display

Country Status (6)

Country Link
US (1) US20200321363A1 (en)
EP (1) EP3433601A4 (en)
JP (1) JP2019521321A (en)
KR (1) KR20190005862A (en)
CN (1) CN109154562A (en)
WO (1) WO2017196737A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2021012685A (en) * 2019-04-16 2021-11-12 Aperam Method for the creation of an iridescent effect on the surface of a material, and devices for carrying out said method.

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815377B2 (en) * 2001-08-17 2004-11-09 Kabushiki Kaisha Toshiba Laser annealing method and apparatus for determining laser annealing conditions
US20070178674A1 (en) * 2001-11-12 2007-08-02 Sony Corporation Laser annealing device and method for producing thin-film transistor
US20110086441A1 (en) * 2008-06-12 2011-04-14 Ihi Corporation Laser annealing method and laser annealing apparatus
WO2016004175A1 (en) * 2014-07-03 2016-01-07 Ipg Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001061734A1 (en) * 2000-02-15 2001-08-23 Matsushita Electric Industrial Co., Ltd. Non-single crystal film, substrate with non-single crystal film, method and apparatus for producing the same, method and apparatus for inspecting the same, thin film transistor, thin film transistor array and image display using it
JP2001308009A (en) * 2000-02-15 2001-11-02 Matsushita Electric Ind Co Ltd Non-single crystal film, substrate therewith method and device for manufacturing the same, inspection device and method of inspecting the same, thin-film transistor formed by use thereof, thin-film transistor array and image display device
ATE486275T1 (en) * 2000-03-22 2010-11-15 Axela Inc METHOD AND DEVICE FOR DETERMINING SEVERAL ANALYTES
CN1238708C (en) * 2003-01-15 2006-01-25 友达光电股份有限公司 Method of monitoring laser recrystallization process
DE102004025331B4 (en) * 2004-05-19 2006-08-24 Georg Andreas Huber Implement for joining blanks made of flat material
JP2006330071A (en) * 2005-05-23 2006-12-07 Fujifilm Holdings Corp Linear beam generating optical apparatus
JP5520431B2 (en) * 2005-09-02 2014-06-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
US7700463B2 (en) * 2005-09-02 2010-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7573584B2 (en) * 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
JP5444053B2 (en) * 2010-03-15 2014-03-19 株式会社日立ハイテクノロジーズ Polycrystalline silicon thin film inspection method and apparatus
JP2012119512A (en) * 2010-12-01 2012-06-21 Hitachi High-Technologies Corp Substrate quality evaluation method and apparatus therefor
JP2012243929A (en) * 2011-05-19 2012-12-10 Hitachi High-Technologies Corp Inspection method and device of polycrystalline silicon thin film
US20130341310A1 (en) * 2012-06-22 2013-12-26 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for excimer laser annealing process
JP2014063941A (en) * 2012-09-24 2014-04-10 Hitachi High-Technologies Corp Polycrystalline silicon film inspection method and device therefor
JP5947248B2 (en) * 2013-06-21 2016-07-06 信越化学工業株式会社 Selection method of polycrystalline silicon rod
TW201512644A (en) * 2013-09-16 2015-04-01 Ind Tech Res Inst Method for automatic optical inspection and system thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6815377B2 (en) * 2001-08-17 2004-11-09 Kabushiki Kaisha Toshiba Laser annealing method and apparatus for determining laser annealing conditions
US20070178674A1 (en) * 2001-11-12 2007-08-02 Sony Corporation Laser annealing device and method for producing thin-film transistor
US20110086441A1 (en) * 2008-06-12 2011-04-14 Ihi Corporation Laser annealing method and laser annealing apparatus
WO2016004175A1 (en) * 2014-07-03 2016-01-07 Ipg Photonics Corporation Process and system for uniformly recrystallizing amorphous silicon substrate by fiber laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3433601A4 *

Also Published As

Publication number Publication date
EP3433601A1 (en) 2019-01-30
KR20190005862A (en) 2019-01-16
US20200321363A1 (en) 2020-10-08
EP3433601A4 (en) 2019-11-20
JP2019521321A (en) 2019-07-25
CN109154562A (en) 2019-01-04

Similar Documents

Publication Publication Date Title
CN100364037C (en) Semiconductor device, annedling method, annealing device and display device
CN1315170C (en) Crystallized state in site monitoring method
US10121687B2 (en) Monitoring method and apparatus for control of excimer laser annealing
KR102111050B1 (en) Monitoring method and apparatus for excimer laser annealing process
TWI481136B (en) Illuminating apparatus and method for controlling energy of a laser source
JP4618360B2 (en) Laser annealing method and laser annealing apparatus
US8404498B2 (en) Method of inspecting semiconductor thin film by transmission imaging and inspection device for the same
US20030068836A1 (en) Laser annealing apparatus, TFT device and annealing method of the same
KR20060043822A (en) Laser crystallization apparatus and laser crystallization method
KR20040106240A (en) Crystallization apparatus, crystallization method, method of manufacturing thin film transistor, thin film transistor, and display apparatus
KR101352702B1 (en) Inspection method of polycrystalline silicon thin film and the same apparatus
US6815377B2 (en) Laser annealing method and apparatus for determining laser annealing conditions
US7184132B2 (en) Inspection method and apparatus of laser crystallized silicons
US7157677B2 (en) Method of picking up sectional image of laser light
US20200321363A1 (en) Process and system for measuring morphological characteristics of fiber laser annealed polycrystalline silicon films for flat panel display
CN111052311A (en) Crystallization monitoring method, laser annealing apparatus, and laser annealing method
US9976969B1 (en) Monitoring method and apparatus for excimer-laser annealing process
US20100197050A1 (en) Method of forming semiconductor thin film and inspection device of semiconductor thin film
CN101071758A (en) Semiconductor device, annealing method, annealing apparatus and display apparatus
JP2014063941A (en) Polycrystalline silicon film inspection method and device therefor
JP2006032835A (en) Crystallized state measuring method and device
JP2005003566A (en) Inspection method and inspection device for crystal film
KR20080001404A (en) Apparatus for graining an amorphous semiconductor

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2017796633

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2017796633

Country of ref document: EP

Effective date: 20181026

ENP Entry into the national phase

Ref document number: 2018558430

Country of ref document: JP

Kind code of ref document: A

Ref document number: 20187032262

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17796633

Country of ref document: EP

Kind code of ref document: A1