JP2006032835A - Crystallized state measuring method and device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily determine whether or not laser power is over and specify an optimum laser energy set value. <P>SOLUTION: One crystallization small region 8 is selected on a power monitor substrate 1, and a first measurement is performed in a direction Y relative to the selected crystallization small region 8 to specify the measurement candidate point 9 of a laser radiation position. Next, a second measurement is performed in a direction Y relative to a specified measurement candidate row 10 including the specified measurement candidate point 9, and an optimum laser energy set value is specified on the basis of the laser energy set value of the crystallization small region 8 under which the measurement candidate point 9 showing a maximum value falls. Thus, the measuring time can be 1/4 times that of a conventional example where scattered light luminance measurement is performed on all measurement candidate points 9 on the power monitor substrate 1, and deterioration in operating ratio can be prevented. In addition, it is easily achieved to judge whether or not the laser power is over and to specify the optimum laser energy set value. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a crystallization state measuring method and a crystallization state measuring apparatus for measuring a crystallization state of a crystallization region in a substrate or the like on which a crystal film is formed.

  For liquid crystal display elements and image sensors that have a strong demand for high resolution, an active matrix type TFT (Thin Film Transistor) is formed on one surface of an insulating substrate such as glass as a driving method. A drive system is adopted. A thin film silicon semiconductor is generally used for the TFT. Here, the thin-film silicon semiconductor is roughly divided into an amorphous silicon semiconductor made of amorphous silicon (amorphous silicon) and a crystalline silicon semiconductor made of crystalline silicon.

  The amorphous silicon semiconductor has the characteristics that the film formation temperature is relatively low, it can be manufactured relatively easily by a vapor deposition method, and it is rich in mass productivity. It is used. However, the amorphous silicon semiconductor is inferior in physical properties such as conductivity compared to the crystalline silicon semiconductor. Therefore, in order to obtain high-speed characteristics, establishment of a manufacturing technique for the TFT made of the crystalline silicon semiconductor is strongly demanded.

  Here, the crystalline silicon semiconductor is manufactured by forming an amorphous silicon thin film on one surface of a substrate by a plasma CVD (CVD: Chemical Vapor Deposition) method or a low pressure thermal chemical vapor deposition method, and performing solid phase growth. This is carried out by forming a crystalline silicon semiconductor film (hereinafter sometimes simply referred to as a crystal film) through a crystallization process and a laser annealing crystallization process in order.

  In the laser annealing crystallization step, a laser beam shaped into a rectangular shape is generally used, and crystallization is performed by scanning the substrate side or the laser side (for example, Japanese Patent Laid-Open No. 08-213629 (Patent Document 1)). reference). Incidentally, the shaping of the laser beam shape and the adjustment of the illuminance distribution are performed by using many optical elements such as a cylindrical lens and an attenuator.

  By the way, an excimer laser annealing apparatus is used in the laser annealing crystallization step. Here, the excimer laser annealing apparatus irradiates laser energy to a crystallized substrate for a product crystallized by solid phase growth in order to manufacture a TFT substrate after setting an appropriate laser energy. The crystallization process proceeds.

  When determining the optimum laser energy value of the excimer laser annealing apparatus to be used, a substrate for determining the laser energy value (hereinafter referred to as a power monitor substrate) is prepared, and is within a predetermined range. This is performed by irradiating a laser to a different area in the power monitor substrate of the same lot as the production substrate with a plurality of laser energy values changed stepwise in (see, for example, JP-A-2002-217103 (Patent Document 2)) ). Then, the crystallinity is confirmed by visual observation or measurement by Raman spectroscopy. Thus, the laser energy value corresponding to the area where the desired crystallinity is obtained is determined to be the optimum laser energy value. Thereafter, the excimer laser annealing apparatus is operated with the optimum laser energy value thus determined, and the production substrate is manufactured.

  As a technique for inspecting the crystallization state in the substrate on which the crystal film is generated by the excimer laser annealing apparatus, an optical measurement method using reflected light, refracted light, transmitted light, etc., or electrical conductivity, lifetime, etc. There are methods that use electrical measurement methods. For example, one surface of a substrate is irradiated with light having a predetermined direction, the intensity of scattered light from the surface is measured to measure the crystallization state, and the crystallization state of the substrate is determined based on the measured value. (For example, refer to Japanese Patent Laid-Open No. 2001-110861 (Patent Document 3)).

  However, the conventional method for inspecting the crystallization state has the following problems. In other words, the crystallized state of the crystal film formed on the substrate surface by the excimer laser annealing apparatus is different depending on the location of the substrate even when irradiated with laser energy under the same setting conditions. And has a so-called substrate in-plane distribution. Such in-plane distribution of the crystallized substrate is caused by the laser beam due to the fluctuation of the laser energy with respect to the time axis and the aberration, optical axis error, etc. caused by the laser irradiation optical system such as the lens group existing from the laser source to the substrate It is generated by the irradiation energy distribution of

  As the laser energy fluctuation with respect to the time axis, there are short-term fluctuation and temporal fluctuation, and the former is known to be observed as a stripe pattern aligned in the scanning direction on the substrate surface on which the crystal film is formed. ing.

  It is very difficult to flatten the laser energy distribution in the substrate surface under the same setting conditions. For example, the energy in the vicinity of both ends in the long axis direction on the laser irradiation surface by the laser beam shaped into a rectangular shape tends to increase. There is. This tendency occurs regardless of the laser power setting value. Then, in a region where the laser energy actually irradiated is excessive (so-called power over), microcrystallization occurs, resulting in a decrease in electron mobility, that is, a decrease in TFT characteristics. Therefore, before irradiating the crystallized substrate for product with laser energy, it is necessary to obtain a laser energy set value that does not cause power over.

  Specifically, first, the power monitor substrate is irradiated with a laser beam with laser energy changed stepwise. For example, FIG. 1 of Patent Document 2 discloses that the laser energy is changed in 15 steps. As described above, there is an in-plane distribution of laser energy in each irradiation region in the irradiation regions with different laser energy setting values. Therefore, next, a large number of measurement points (10 columns × 9 rows in FIG. 2 of the above-mentioned Patent Document 2) consisting of a combination of laser energy and irradiation position (pointing to the position in the long axis direction in each laser irradiation region). The crystallization state is measured by the above, and the optimum setting condition is selected so that the laser energy does not become excessive.

As described above, in the method for determining the optimum laser energy value described in Patent Document 2, the crystallization state at 90 points must be measured for each irradiation region with different laser energy, and a great amount of measurement time is required. There is a problem of requiring image data processing time. For this reason, when manufacturing conditions change after a lot change of a production substrate or after maintenance of a laser irradiation device, it is very important to determine an optimum laser energy setting value by measurement using the power monitor substrate. There is a problem that it takes a lot of time and causes the operating rate to deteriorate.
Japanese Patent Application Laid-Open No. 08-213629 Japanese Patent Laid-Open No. 2002-217103 Japanese Patent Laid-Open No. 2001-110861

  Accordingly, an object of the present invention is to provide a crystallization state measuring method and a crystallization state measuring apparatus capable of easily determining the laser power over and specifying the optimum laser energy set value by shortening the measurement time. .

In order to solve the above problems, the present invention provides:
Measures the crystallization state of a crystallized region that is formed by arranging multiple crystallized small regions that have been crystallized by irradiating laser light with different energy settings on the substrate. A crystallization state measuring method for
The crystallization state of the selective crystallization small region selected from the crystallization small region is arranged in another direction different from the one direction, and a plurality of measurements set in a row in the selective crystallization small region A first measurement step for performing a first measurement at a point;
A first maximum value calculating step of calculating a maximum value of a measured value from the result of the first measurement for the selective crystallization small region and setting it as a first maximum value;
A maximum value point specifying step for specifying the position in the other direction of the measurement point exhibiting the first maximum value as a maximum value measurement point position;
The crystallization state of the plurality of crystallized subregions arranged in the one direction is measured at the plurality of measurement points arranged in the one direction and passing through the maximum value measurement point. A second measurement step for performing a second measurement;
A second maximum value calculating step of calculating the maximum value of the measured value from the result of the second measurement in the one direction and setting it as the second maximum value;
An energy set value specifying step is provided for specifying an energy set value when the laser beam is irradiated onto the small crystallization region including the measurement point exhibiting the second maximum value.

  According to the above configuration, first, the crystallization state of the selective crystallization small region selected on the substrate is first measured at a plurality of measurement points set in the selective crystallization small region, and the maximum value (first The position of the measurement point exhibiting (1 maximum value) is specified as the maximum value measurement point position. Next, the crystallization state of the plurality of crystallization small regions arranged in the one direction is set to the measurement points arranged in the unidirectional direction passing through the maximum value measurement point set in each crystallization small region. The energy setting value of the small crystallization region including the measurement point exhibiting the maximum value (second maximum value) is specified.

  Therefore, if the number of measurement points set in the crystallization small region is “L” and the number of crystallization small regions arranged in one direction is “N”, (L + N) measurement points are measured. It is only necessary to measure the crystallization state, and the measurement time is shortened compared with the conventional method for determining the optimum laser energy value described in Patent Document 2 in which the crystallization state at (L × N) measurement points is measured. With time, it is possible to prevent the operating rate from deteriorating. Further, it is possible to easily determine the laser power over and specify the optimum laser energy set value.

In the crystallization state measuring method of one embodiment,
A plurality of selective crystallization subregions selected in the first measurement step and subjected to the first measurement;
In the first maximum value calculating step, representative values of a plurality of maximum values calculated from a result of the first measurement for the plurality of selective crystallization small regions are calculated as the first maximum value.

  According to this embodiment, when the first maximum value is calculated, it is calculated from the result of the first measurement for a plurality of selective crystallization small regions. Therefore, even if there is a singular value in the value of the first measurement relating to any of the selective crystallization subregions, by obtaining a representative value such as an average value or a mode value, The influence of the singular value can be reduced.

  Furthermore, even in that case, if the number of the selective crystallization small regions is “M”, the crystallization state at (L × M + N) measurement points may be measured, and (L × N) measurement is performed. Compared with the conventional method for determining the optimum laser energy value described in Patent Document 2 in which the crystallization state for a point is measured, the measurement time can be shortened.

In addition, this invention
Measures the crystallization state of a crystallized region that is formed by arranging multiple crystallized small regions that have been crystallized by irradiating laser light with different energy settings on the substrate. A crystallization state measuring method for
The crystallization states of a plurality of selective crystallization subregions selected from the crystallization subregions are arranged in another direction different from the one direction, and are set in a row in each of the selective crystallization subregions. A first measurement step for performing a first measurement at a plurality of measurement points;
From the result of the first measurement for the plurality of selective crystallization subregions, the maximum value of the measurement value is calculated for each selective crystallization subregion to be the first maximum value, and the measurement value is next to the maximum value. A first maximum value / next maximum value calculating step for calculating
While calculating the representative value of the plurality of first maximum values and specifying the position in the other direction of the measurement point that exhibits the measurement value closest to the representative value of the first maximum value as the maximum value measurement point position, The maximum value point for calculating the representative value of the plurality of next large values and specifying the position in the other direction of the measurement point exhibiting the measurement value closest to the representative value of the second large value as the next large value measurement point position・ Next maximum point identification step,
The first measurement point sequence arranged in the one direction passing through the maximum value measurement point set in each crystallization subregion, and the crystallization state of the plurality of crystallization subregions arranged in the one direction, And a second measurement step for performing a second measurement to be measured in the second measurement point sequence set in each crystallization small region and arranged in the one direction passing through the next maximum value measurement point;
The maximum value is calculated from the result of the second measurement for the first measurement point sequence to obtain the second maximum value, while the maximum value is calculated from the result of the second measurement for the second measurement point sequence. A second and third maximum value calculating step for setting the third maximum value;
The energy set value when the laser beam is irradiated to the crystallization small region including the measurement point exhibiting the second maximum value is set as the first energy set value, while the measurement point exhibiting the third maximum value is included. The energy set value when the laser beam is irradiated to the crystallization small region is set as the second energy set value, and the energy set value is obtained by averaging the first energy set value and the second energy set value. An energy setting value specifying step for specifying is provided.

  According to the above configuration, in addition to calculating the first maximum value from each of the selected crystallized subregions and calculating the representative value of the plurality of first maximum values, Calculate the next large value from the selected crystallization small region, calculate a representative value of a plurality of the above large values, and average the laser energy set values obtained based on the two representative values in total to set the laser energy set value To identify. Therefore, even if there is a singular value in the value of the first measurement related to any of the selective crystallization small regions, the influence of the singular value on the result of specifying the laser energy set value can be further reduced.

  Furthermore, even in that case, the number of measurement points set in the crystallization small region is “L”, the number of crystallization small regions arranged in one direction is “N”, and the selection is performed. If the number of crystallization small regions is “M”, the crystallization state at (L × M + 2N) measurement points may be measured. Therefore, the measurement time can be shortened as compared with the conventional method for determining the optimum laser energy value described in Patent Document 2 in which the crystallization state at (L × N) measurement points is measured.

In addition, this invention
Measures the crystallization state of a crystallized region that is formed by arranging multiple crystallized small regions that have been crystallized by irradiating laser light with different energy settings on the substrate. A crystallization state measuring method for
The crystallization states of a plurality of selective crystallization subregions selected from the crystallization subregions are arranged in another direction different from the one direction, and are set in a row in each of the selective crystallization subregions. A first measurement step for performing a first measurement at a plurality of measurement points;
From the result of the first measurement for the plurality of selective crystallization subregions, the maximum value of the measurement value is calculated for each selective crystallization subregion to be the first maximum value, and the measurement value is next to the maximum value. A first maximum value / next maximum value calculating step for calculating
While the position in the other direction of the measurement point exhibiting the plurality of first maximum values is specified as the maximum value measurement point position, the position in the other direction of the measurement point exhibiting the plurality of second largest values is the second largest value. Maximum value point / next maximum point specification step specified as measurement point position,
The crystallization state of the plurality of crystallized subregions arranged in the one direction is set in each crystallized subregion and the plurality of first ones arranged in the one direction passing through the plurality of maximum value measurement points. A second measurement is performed using a measurement point sequence and a plurality of second measurement point sequences set in each crystallization small region and arranged in the one direction passing through the plurality of next largest measurement points. A second measurement step;
A maximum value is calculated from the result of the second measurement for the plurality of first measurement point sequences to obtain a plurality of second maximum values, while from the result of the second measurement for the plurality of second measurement point sequences. Second and third maximum value calculating steps for calculating a maximum value to obtain a plurality of third maximum values;
While setting the energy setting value when the laser beam is irradiated to the plurality of crystallization small regions including the measurement points exhibiting the plurality of second maximum values as the first energy setting value, the plurality of third maximum values The energy setting value when the laser beam is irradiated to a plurality of crystallization small regions including the measurement points exhibiting the second energy setting value, the plurality of first energy setting values and the plurality of second An energy setting value specifying step for specifying the energy setting value by calculating a representative value with the energy setting value is provided.

  According to the above configuration, in addition to selecting a plurality of crystallization small regions and calculating the plurality of first maximum values and the plurality of next maximum values from each selected crystallization small region, the respective first maximum values The laser energy setting value is obtained based on the next large value, the number of measurement points set in the crystallization small region is set to “L”, and the number of crystallization small regions arranged in the one direction is When “N” is set and the number of the selective crystallization small regions is “M”, one representative value is obtained from (2 × M) laser energy setting values. Therefore, even if there is a singular value in the value of the first measurement related to any of the selective crystallization small regions, the influence of the singular value on the result of specifying the laser energy set value can be further reduced.

  Furthermore, even in that case, the crystallization state at (L × M + 2M × N) measurement points may be measured. Therefore, the measurement time can be shortened as compared with the conventional method for determining the optimum laser energy value described in Patent Document 2 in which the crystallization state at (L × N) measurement points is measured.

In the crystallization state measuring method of one embodiment,
The representative values are calculated by calculating the average value of all the values to be calculated, the average value of the values obtained by removing the maximum value or the minimum value from all the values to be calculated, and all the values to be calculated. This is performed by calculating one of an average value obtained by removing the maximum value and the minimum value from the value of the value, and a mode value among all the values to be calculated.

  According to this embodiment, the representative value can be calculated accurately and easily.

In the crystallization state measuring method of one embodiment,
The measurement of the crystallization state is performed by irradiating the surface of the substrate with light and measuring the scattered light intensity in the direction facing the main surface of the substrate.

  According to this embodiment, the crystallization state can be accurately and easily measured.

In addition, this invention
Substrate positioning means for positioning the measurement position of the substrate at a predetermined position;
Illumination means for irradiating the surface of the substrate with light;
Imaging means for imaging the main surface of the substrate from the side facing the main surface of the substrate to obtain image data;
Image processing means for processing image data from the imaging means;
And having control means for controlling operations including positioning of the substrate by the substrate positioning means or processing of image data by the image processing means,
Under the control of the control means,
The substrate positioning means is formed on the substrate so as to be arranged in one direction, and from one of a plurality of crystallization small regions subjected to crystallization treatment by being irradiated with laser light with different energy setting values. Select the subregion,
The substrate positioning means, the illuminating means, the imaging means and the image processing means are arranged such that the crystallization state of the selective crystallization small region is arranged in another direction different from the one direction, and in the selective crystallization small region. Perform a first measurement to measure at multiple measurement points set in a row,
The image processing means calculates the maximum value of the measurement value from the result of the first measurement with respect to the selective crystallization small region to obtain the first maximum value, and sets the position of the measurement point exhibiting the first maximum value to the maximum. Specify the value measurement point position,
The substrate positioning means, the illumination means, the imaging means, and the image processing means are configured such that the crystallization states of the plurality of crystallization small regions arranged in one direction are set in each crystallization small region and the maximum value measurement point A second measurement is performed to measure at a plurality of measurement points arranged in the one direction passing through
The image processing means calculates the maximum value of the measurement value from the result of the second measurement to obtain the second maximum value, and the laser beam is applied to the crystallization small region including the measurement point exhibiting the second maximum value. It is characterized in that the energy set value when irradiated is specified.

  According to the above configuration, first, the crystallization state of the selective crystallization small region selected on the substrate is first measured at a plurality of measurement points set in the selective crystallization small region, and the maximum value (first The position of the measurement point exhibiting (1 maximum value) is specified as the maximum value measurement point position. Next, the crystallization state of the plurality of crystallization small regions arranged in the one direction is set to the measurement points arranged in the unidirectional direction passing through the maximum value measurement point set in each crystallization small region. It is possible to specify the energy setting value of the small crystallization region including the measurement point that exhibits the maximum value (second maximum value) after two measurements.

  Therefore, if the number of measurement points set in the crystallization small region is “L” and the number of crystallization small regions arranged in one direction is “N”, (L + N) measurement points are measured. It is only necessary to measure the crystallization state, and the measurement time is shortened compared with the conventional method for determining the optimum laser energy value described in Patent Document 2 in which the crystallization state at (L × N) measurement points is measured. With time, it is possible to prevent the operating rate from deteriorating. Further, it is possible to easily determine the laser power over and specify the optimum laser energy set value.

Moreover, in the crystallization state measuring apparatus of one embodiment,
The image data acquired by the imaging means is an intensity value of scattered light from the substrate.

  According to this embodiment, the crystallization state can be accurately and easily measured.

  As is clear from the above, the crystallization state measuring method and the crystallization state measuring apparatus according to the present invention, first, the crystallization state of the selective crystallization small region selected on the substrate is stored in the selective crystallization small region. First measurement is performed at a plurality of measurement points set in a line, and the position of the measurement point that exhibits the maximum value (first maximum value) is specified as the maximum value measurement point position. Next, the crystallization state of the plurality of crystallization small regions arranged in one direction is set at each of the plurality of measurement points arranged in the one direction passing through the maximum value measurement point set in each crystallization small region. Since the second measurement is performed and the energy setting value of the crystallization small region including the measurement point exhibiting the maximum value (second maximum value) is specified, the number of measurement points set in the crystallization small region is “L”. Assuming that the number of small crystallization regions arranged in one direction is “N”, the crystallization state at (L + N) measurement points may be measured.

  Therefore, compared with the conventional method for determining the optimum laser energy value described in Patent Document 2 in which the crystallization state at (L × N) measurement points is measured, the measurement time is shortened and the operating rate is reduced. Deterioration can be prevented. Further, it is possible to easily determine the laser power over and specify the optimum laser energy set value.

  Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments.

First Embodiment FIG. 1 is a configuration diagram of a crystallization state measuring apparatus that realizes a crystallization state measuring method according to the present embodiment, and is used to set a laser energy setting value of an excimer laser annealing apparatus. . In FIG. 1, reference numeral 1 denotes a crystallized substrate, on which a crystal film is generated. The crystallized substrate 1 is placed on the XY stage in the substrate positioning mechanism 2 having an XY stage for moving and positioning. The illumination 3 irradiates the main surface (upper surface) on which the crystal film of the crystallized substrate 1 is formed with observation light obliquely from above. The main surface of the crystallized substrate 1 irradiated with the observation light by the illumination 3 is picked up by a camera 4 having a CCD (charge coupled device) sensor, and image data picked up by the camera 4 is sent to the image processing device 5. Then, the image processing apparatus 5 acquires and holds the data and performs data processing to calculate desired information. The control device 6 is constituted by a personal computer and has a storage medium for controlling the substrate positioning mechanism 2, the image processing device 5, and the entire crystallization state measuring device, and for registering and storing measurement / inspection conditions. .

  As described above, when the crystallization substrate 1 is crystallized by laser annealing, irregularities due to crystal grain boundaries are generated on the surface of the crystallization substrate 1. Observation light from the illumination 3 irradiated on the unevenness is scattered light and sensed by the camera 4, and a bright image is captured by the CCD sensor of the camera 4. There is a correlation between the progress of the degree of crystallinity and the unevenness on the surface of the crystallized substrate 1, whereby the crystallized state of the crystallized substrate 1 can be measured by the brightness of the captured image.

  Next, the power monitor board will be described. FIG. 2 is a diagram showing a power monitor substrate, which is used as the crystallized substrate 1 in FIG. 1 when setting the laser energy set value of the excimer laser annealing apparatus. The surface of the power monitor substrate 1 has a crystallization region 7 in which a crystal film is generated. The crystallization region 7 is composed of a plurality of crystallization small regions 8a, 8b, 8c,... Arranged in the substrate longitudinal direction (corresponding to the scanning direction X in the XY stage). The plurality of small crystallized regions 8a, 8b, 8c,... Are crystallized at different laser energy setting values by changing the laser energy setting values stepwise by an excimer laser annealing apparatus. However, in each of the small crystallization regions 8a, 8b, 8c,..., Crystallization is performed with the same laser energy setting value. Each of the small crystallized regions 8a,... Has the same rectangular shape elongated in the short side direction of the substrate (corresponding to the direction Y orthogonal to the scanning direction X in the XY stage), which is the laser beam shape of the excimer laser annealing apparatus. Depends on.

  At the time of laser annealing, for example, after the crystallization small region 8a is irradiated with a certain laser energy setting value Xa to perform crystallization processing of the crystallization small region 8a, the crystallization small region in the substrate long side direction (scanning direction X) is performed. Scanning is performed by relative movement between the laser beam and the substrate position by the length of the short side of 8a. Then, the next crystallization small region 8b is irradiated with the changed laser energy set value Xb to perform the crystallization process. By sequentially performing such operations, the crystallization region 7 is formed.

  In the crystallization region 7, measurement candidate points 9 when the crystallization state of the power monitor substrate 1 is measured by the crystallization state measuring device shown in FIG. It is set in the shape arrangement. A plurality of measurement candidate points 9 are provided in the laser beam major axis direction (direction Y: the long side direction of the crystallized small region 8a,...) In each crystallized small region 8a,. For example, nine measurement candidate points 9 are set in FIG. 2. Here, a group of the measurement candidate points 9 arranged in the relative scanning direction X is referred to as a measurement candidate row 10, and the measurement candidate points arranged in the laser beam long axis direction in the same crystallization small region 8. A group of 9 is called a measurement candidate row 11.

  By the way, in the excimer laser annealing apparatus, the laser energy emitted from the laser light source is changed by changing the output of the laser light source. An energy variable dimming means may be interposed in the path to the monitor substrate 1. For example, the laser energy set value can be changed by changing the strength of the attenuator or exchanging ND filters having different concentrations. These methods make it easy to change the set values and have high reproducibility of the set values, compared to methods such as changing the distance from the light source to the power monitor substrate 1.

  At the time of the power monitor measurement, the measurement candidate points 9 arranged and set on the power monitor substrate 1 as described above are placed on the power monitor substrate 1 by the substrate positioning mechanism 2 in the crystallization state measuring apparatus shown in FIG. While moving stepwise in the side direction, the observation light from the illumination 3 is irradiated and the scattered light is measured by the camera 4, the image processing device 5, and the control device 6. Based on the measurement result, the crystallization state at each measurement candidate point 9 on the measurement candidate string 10 is sequentially measured.

  FIG. 3 shows an example of measurement values obtained as a result of the power monitor measurement performed in this way. In FIG. 3, the horizontal axis represents the laser energy setting value of the excimer laser annealing apparatus, and the vertical axis represents the measured value (image brightness, luminance,...) At each measurement candidate point 9. Here, FIG. 3 illustrates measured values for each measurement candidate column 10. The curve in the figure shows the distribution of the laser energy, and the vertical line 12 shows the laser energy set values Xa, Xb, Xc,. Therefore, the intersection of the curve and the vertical line 12 is a measurement candidate point 9 belonging to the measurement candidate row 10 in the crystallization small region 8 where the laser annealing process is performed with the laser energy setting value indicated by the vertical line 12. The measured value is shown. FIG. 3 shows the laser energy distribution in three measurement candidate columns 10 out of nine measurement candidate columns 10 in total.

  In each measurement candidate column 10, crystallization progresses as the laser energy set value increases, and the measured value increases. When the laser energy exceeding a certain laser energy set value is applied and annealing is performed, the measured value decreases. Therefore, when the measurement candidate row 10 to be measured includes the measurement candidate points 9 in the small crystallization region 8 irradiated with laser energy exceeding a certain laser energy set value as described above. The maximum value appears in the measurement values of the measurement candidate column 10.

  Here, the decrease in the measured value is excessive for the given laser energy to perform crystallization (that is, the power is over), and fine crystal grains are generated in the crystallization small region 8, This is because the amount of observation light reflected from the illumination 3 is reduced. Such a fine crystal grain generation state is a crystallized state that is regarded as a defective product because the performance of the TFT formed on the product substrate surface is degraded.

  Therefore, in the power monitor measurement, the image processing device 5 calculates the laser energy value (peak position) at which the measured value is maximum (that is, the measured value is peak) in the measurement candidate sequence 10. Note that the peak position of the calculated measurement value is different for each measurement candidate column 10. The reason for the occurrence of this difference is that the fluctuation of the laser energy with respect to the short-term time axis is added mainly with the distribution in the substrate surface by irradiation with a constant laser energy setting value.

  FIG. 4 shows the laser beam long axis direction (direction) when laser annealing treatment is performed by an excimer laser annealing apparatus on three arbitrarily selected crystallization small regions 8p, 8q, and 8r of the power monitor substrate 1. The relationship between the irradiation position at Y) (hereinafter referred to as the laser irradiation position) and the laser energy is shown. As can be seen from FIG. 4, it is very difficult to adjust the intensity distribution of the laser energy to be constant (that is, so that the distribution curve becomes flat), and the intensity near both ends of the laser irradiation position increases. Tend. This tendency does not change even if the laser energy set value is changed.

  FIG. 5 is a diagram showing the relationship between the laser irradiation position and measured values (image brightness, luminance, etc.) in the same three crystallized small regions 8p, 8q, 8r as in FIG. Since there is a relationship between the laser energy, the degree of surface unevenness of the power monitor substrate 1 and the scattered light luminance in a certain range until the laser energy reaches power over (the range until reaching the peak in FIG. 3), the measurement of FIG. The value distribution characteristic has a correlation with the laser energy distribution characteristic of FIG. Therefore, as shown in FIG. 5, a maximum value point 16 appears near the end of the laser irradiation position, and a minimum value appears near the center of the laser irradiation position in the measured values of the respective crystallization small regions 8p, 8q, and 8r. A value point 17 appears. In that case, since the change in the measured value near the minimum value point 17 is small, it is difficult to specify the laser irradiation position that exhibits the minimum value. On the other hand, since the change in the measured value near the maximum value point 16 is relatively large, it is easy to specify the laser irradiation position that exhibits the maximum value. The tendency that the measured values near both ends of the laser irradiation position become maximum does not change even if the laser energy set value (crystallization small region 8) changes.

  Thus, while the measured values near both ends of the laser irradiation position are maximized, the measured values near the center of the laser irradiation position tend to be minimum even when the laser energy setting value (crystallization small region 8) changes. does not change. There is a correlation between the laser energy set value and the measured value. Therefore, if the peak values in the laser energy distribution of the three measurement candidate columns 10 shown in FIG. 3 are the same, the measurement candidate column 10 having the minimum laser energy setting value exhibiting the peak value is the three measurement candidates. The measurement candidate column 10 in which the laser irradiation position in the column 10 is on the outermost side is obtained. Moreover, the measurement candidate row 10 having the maximum laser energy setting value exhibiting the peak value is the measurement candidate row 10 having the laser irradiation position at the center side.

  Therefore, in FIG. 3, the curve 13 is a measurement sequence related to the measurement candidate sequence 10 passing through the measurement candidate point 9 in the vicinity of the laser irradiation position where the energy is maximum in the laser energy distribution in the laser beam long axis direction. The measured value reaches the peak at the minimum laser energy setting value in the displayed three measurement candidate columns 10. Further, the curve 14 can be said to be a measurement column related to the measurement candidate column 10 passing through the measurement candidate point 9 where the energy is minimum in the laser energy distribution in the laser beam long axis direction, and the three columns displayed. The measurement value reaches the peak at the maximum laser energy setting value in the measurement candidate column 10.

  Therefore, in the present embodiment, the peak of the curve 13 where the measured value reaches the peak with the minimum laser energy setting value is selected as the optimum peak 15, and the laser energy setting value that exhibits the optimum peak 15 is selected as the actual laser annealing process. The laser energy setting value at the time (laser power intensity setting value) is used.

  That is, as an actual crystallization state measuring method, first, for example, the scattered light luminance for each laser irradiation position (position on the direction Y) in the measurement candidate row 11 is measured. In FIG. 5, the laser irradiation position 18 at the peak point 16 where the measurement value is the maximum value is specified, and the measurement candidate string 10 is specified. Next, the scattered light luminance for each laser energy setting value in the specified measurement candidate sequence 10 is measured. The distribution of measured values thus obtained corresponds to the curve 13 in FIG. 3, and the peak value of the curve 13 becomes the optimum peak 15.

  FIG. 6 is a schematic flowchart of the crystallization state measurement processing operation executed under the control of the control device 6 in the crystallization state measurement apparatus shown in FIG. Hereinafter, the crystallization state measurement process will be described in detail with reference to FIG. When the power monitor substrate 1 crystallized with different laser energy setting values is placed on the XY stage in the substrate positioning mechanism 2, the crystallization state measurement processing operation starts.

  In step S1, one of the plurality of small crystallization regions 8a, 8b, 8c,... On the power monitor substrate 1 is selected, and the selected crystallization small region 8 is at the irradiation position of the observation light from the illumination 3. The XY stage in the substrate positioning mechanism 2 is controlled so that the power monitor substrate 1 is positioned. In step S2, the XY stage is controlled, and each measurement candidate point 9 constituting the measurement candidate row 11 on the selective crystallization small region 8 is sequentially irradiated with the observation light from one end side to the other end side. The Then, the scattered light luminance (intensity) at each measurement candidate point 9 in the measurement candidate row 11 is measured. Thus, the first measurement in the direction Y is performed.

  In step S 3, the image processing device 5 calculates the maximum value (first maximum value) of the measurement values of all the measurement candidate points 9 on the selective crystallization small region 8. In step S4, based on the first maximum value calculated by the image processing device 5, the position of the measurement candidate point 9 exhibiting the first maximum value (that is, the laser irradiation position) is set as the first maximum value point. Identified.

  In step S5, the XY stage is controlled so that the measurement candidate points 9 constituting the measurement candidate sequence (hereinafter referred to as a specific measurement candidate sequence) 10 including the first maximum point are moved from one end side to the other end side. Are sequentially irradiated with the observation light. Then, the scattered light luminance (intensity) at each measurement candidate point 9 in the specific measurement candidate row 10 is measured. Thus, the second measurement in the direction X is performed.

  In step S6, the image processing device 5 calculates the maximum value (second maximum value) of the measurement values of all the measurement candidate points 9 in the specific measurement candidate sequence 10. In step S7, the laser energy when the laser annealing is actually performed by the image processing apparatus 5 based on the laser energy setting value of the small crystallization region 8 including the measurement candidate point 9 exhibiting the calculated second maximum value. A set value is specified. Thereafter, the crystallization state measurement processing operation is terminated.

  In step S1, when the crystallization small region 8 including the measurement candidate point 9 to be overpowered is selected when the crystallization small region 8 is selected, the laser energy set value and measurement as described above are performed. The correlation with the value is not observed, and the crystallization state measurement method of the present embodiment cannot be applied. In order to avoid such a situation, it is only necessary to select the crystallization small region 8 having a laser energy set value that cannot cause power over in consideration of the past results and materials as the selective crystallization small region 8. Furthermore, in order to ensure that there is no power over portion in the selective crystallization small region 8, the second maximum value calculated in step S6 is specified when the laser energy set value is specified in step S7. It is desirable to specify a laser energy set value lower than the laser energy set value of the crystallization small region 8 exhibiting

  As described above, in the present embodiment, one crystallization small region 8 on the power monitor substrate 1 is selected, and the first measurement in the direction Y is performed on the selected crystallization small region 8 to obtain the maximum. The measurement candidate point 9 of the laser irradiation position which exhibits a value is specified. Then, the second measurement in the direction X is performed on the specific measurement candidate sequence 10 including the specific measurement candidate point 9, and based on the laser energy setting value of the crystallization small region 8 to which the measurement candidate point 9 exhibiting the maximum value belongs. Thus, the laser energy setting value when actually performing laser annealing is specified. Therefore, as shown in FIG. 2, if the number of measurement candidate points 9 included in the measurement candidate column 10 is “10” and the number of measurement candidate points 9 included in the measurement candidate row 11 is “9”. The optimal laser energy setting value can be specified by measuring the scattered light luminance with respect to 10 + 9 = 19 measurement candidate points 9.

  On the other hand, when the crystallization state measurement method disclosed in Patent Document 2 is applied to the same power monitor substrate 1, the scattered light luminance relating to 10 × 9 = 90 measurement candidate points 9 is obtained. It is necessary to perform measurement, which takes a lot of time and leads to deterioration of the operation rate. Therefore, according to the present embodiment, the measurement time can be reduced to 1/4 or less, and the deterioration of the operation rate can be prevented.

Second Embodiment By the way, in the first embodiment, one crystallization small region 8 is selected as the selective crystallization small region 8. Further, when the first measurement in the direction Y is performed for the selective crystallization small region 8, one maximum value is obtained. Therefore, when a singular value due to some abnormality is measured at the measurement candidate point 9 in the selective crystallization small region 8, it has some influence on the result of specifying the optimum laser energy setting value. The present embodiment relates to a crystallization state measurement method for eliminating such adverse effects.

Crystallization state measurement method A
In this crystallization state measuring method A, the crystallization state is measured by the following procedure. That is,
(1) Select M (2 ≦ M ≦ (N−1)) crystallization subregions 8 when the total number of crystallization subregions of the power monitor substrate 1 is N as the selective crystallization subregions 8. To do. Then, the first measurement in the direction Y is performed for each selective crystallization small region 8.
(2) From the result of the first measurement relating to the M selective crystallization subregions 8, one first maximum value is obtained for each selective crystallization subregion 8, and a total of M first maximum values are obtained. .
(3) An average value of the calculated M first maximum values is obtained. In that case, it is better to obtain the average value by excluding the maximum value or the minimum value among the M first maximum values, or excluding the maximum value and the minimum value. Alternatively, the mode value among the M first maximum values may be obtained. Thus, one representative value is obtained from the M first maximum values. And based on this calculated | required representative value, the laser irradiation position of the measurement candidate point 9 which exhibits the measured value nearest to this representative value is specified as a 1st maximum value point.
(4) The second measurement in the direction X is performed on one specific measurement candidate string 10 including the specified first maximum value point.
(5) A second maximum value is obtained from the result of the second measurement relating to the specific measurement candidate string 10.
(6) Based on the laser energy setting value of the crystallization small region 8 including the measurement candidate point 9 exhibiting the second maximum value, the laser energy setting value when actually performing laser annealing is specified.

  In this crystallization state measuring method A, a plurality of small crystallization regions 8 are selected, and one representative value is obtained from a plurality of first maximum values obtained from the respective selective crystallization small regions 8. Therefore, even if there is a singular value among the first measured values related to the plurality of selected crystallization small regions 8, the optimum laser energy setting of the singular value is obtained by obtaining an average value or a mode value. The effect on the result of specifying the value can be reduced.

  When the M first maximum values are obtained in the above (2), if the M first maximum values are dispersed at both ends in the laser beam long axis direction, the M first maximum values are obtained. If the laser irradiation position (first maximum value point) of the measurement candidate point 9 that exhibits the measurement value closest to the representative value obtained from the 1 maximum value is at one end in the laser beam major axis direction, The specific measurement candidate sequence 10 in which the second measurement is performed is set on the one end side in the laser beam long axis direction. On the other hand, if it exists in the other end part of the said laser beam long axis direction, the specific measurement candidate row | line | column 10 in which the 2nd measurement to the said direction X is performed is set to the said other end part side of the said laser beam long axis direction Will be.

Crystallization state measurement method B
In this crystallization state measuring method B, the crystallization state is measured by the following procedure. That is,
(1) Select M (2 ≦ M ≦ (N−1)) crystallization subregions 8 when the total number of crystallization subregions of the power monitor substrate 1 is N as the selective crystallization subregions 8. To do. Then, the first measurement in the direction Y is performed for each selective crystallization small region 8.
(2) From the result of the first measurement relating to the M selective crystallization small regions 8, one first maximum value is obtained for each selective crystallization small region 8. Further, one next large value is obtained which has a value next to the first maximum value and is located at the other end opposite to the one end where the first maximum value is located in the laser beam long axis direction. . In this way, a total of M first maximum values and M next largest values are obtained. In this case, as shown in FIG. 5, when the first maximum value is a peak point 16 on one end side in the laser beam long axis direction, the next maximum value is the other end in the laser beam long axis direction as indicated by a star. Exists on the side.
(3) An average value of the calculated M first maximum values is obtained. Further, an average value of the M next largest values is obtained. In this case, as in the case of the crystallization state measuring method A, the average value may be obtained by excluding the maximum value, the minimum value, the maximum value, and the minimum value, or the mode value may be obtained. Then, based on the obtained representative value of the first maximum value, the laser irradiation position of the measurement candidate point 9 that exhibits the measurement value closest to the representative value of the first maximum value is specified as the first maximum value point. Further, based on the obtained representative value of the next largest value, the laser irradiation position of the measurement candidate point 9 that exhibits the measurement value closest to the representative value of the next largest value is specified as the next largest value point.
(4) The second measurement in the direction X is performed on the first specific measurement candidate string 10 including the specified first maximum value point. Further, the second measurement in the direction X is performed on the second specific measurement candidate string 10 including the specified next maximum point.
(5) A first second maximum value (corresponding to the second maximum value in claim 3) is obtained from the result of the second measurement relating to the first specific measurement candidate string 10. Further, a second second maximum value (corresponding to the third maximum value in claim 3 above) is obtained from the result of the second measurement relating to the second specific measurement candidate string 10.
(6) The laser energy setting value of the crystallization small region 8 including the measurement candidate point 9 exhibiting the first second maximum value is obtained as the first laser energy setting value. Further, the laser energy setting value of the small crystallization region 8 including the measurement candidate point 9 exhibiting the second second maximum value is obtained as the second laser energy setting value. Then, an average value of the first and second laser energy setting values is obtained, and a laser energy setting value for actually performing laser annealing is specified.

  In this crystallization state measuring method B, in addition to selecting a plurality of crystallization small regions 8, representative values are obtained from the first maximum value point and the next maximum value point from each selected crystallization small region 8. The laser energy setting values obtained from the total of two representative values are averaged to specify the laser energy setting value. Therefore, the influence of the singular value on the specified result of the optimum laser energy setting value can be further reduced as compared with the crystallization state measuring method A.

  In the above (2), when the M first maximum values and the M submaximal values are obtained, both the M first maximum values and the M submaximal values are used as the laser beam long axis. When distributed at both ends of the direction, the first maximum value point obtained from the M first maximum values and the next maximum value point obtained from the M next maximum values are both described above. If there is at one end in the beam long axis direction, the first and second specific measurement candidate sequences 10 and 10 in which the second measurement in the direction X is performed are set on the one end side in the laser beam long axis direction. The On the other hand, if the first maximum value point and the next maximum value point are separated at both ends in the laser beam long axis direction, the first and second specific measurement candidate sequences 10 and 10 are also the laser. It is set separately on both ends in the beam long axis direction.

Crystallization state measurement method C
In this crystallization state measuring method C, the crystallization state is measured by the following procedure. That is,
(1) Select M (2 ≦ M ≦ (N−1)) crystallization subregions 8 when the total number of crystallization subregions of the power monitor substrate 1 is N as the selective crystallization subregions 8. To do. Then, the first measurement in the direction Y is performed for each selective crystallization small region 8.
(2) As in the case of the crystallization state measuring method B, the first maximum value for each of the selective crystallization subregions 8 is obtained from the result of the first measurement for the M selective crystallization subregions 8. Find the next largest value. In this way, a total of M first maximum values and M next largest values are obtained.
(3) The laser irradiation positions of the M measurement candidate points 9 exhibiting the obtained M first maximum values are specified as the first maximum value points. Further, the laser irradiation positions of the M measurement candidate points 9 exhibiting the obtained M next maximum values are specified as the next maximum value points.
(4) The second measurement in the direction X is performed on the M first specific measurement candidate strings 10 including the M first maximum points specified. Furthermore, the second measurement in the direction X is performed on the M second specific measurement candidate sequences 10 including the M first large points identified.
(5) M first second maximum values (corresponding to the second maximum values in claim 4) are obtained from the result of the second measurement relating to the M first specific measurement candidate strings 10. . Further, M second second maximum values (corresponding to the third maximum value in claim 4) are obtained from the result of the second measurement relating to the M second specific measurement candidate strings 10.
(6) The laser energy setting value of the small crystallization region 8 including the measurement candidate point 9 exhibiting the M first maximum value is obtained as the first laser energy setting value. Further, the laser energy setting value of the crystallization small region 8 including the measurement candidate point 9 exhibiting the M second maximum value is obtained as the second laser energy setting value. Then, an average value of the M first laser energy setting values and the M second laser energy setting values is obtained, and a laser energy setting value for actually performing laser annealing is specified. In that case, it is better to obtain the average value by excluding the maximum value or the minimum value from the 2 × M laser energy setting values or by excluding the maximum value and the minimum value. Alternatively, the mode value among 2 × M laser energy set values may be obtained.

  In this crystallization state measuring method C, in addition to selecting a plurality of crystallization small regions 8 and obtaining the first maximum value point and the next maximum value point from each selected crystallization small region 8, A laser energy set value is obtained based on 1 maximum value point and next maximum value point, and one representative value is obtained from the 2 × M laser energy set values. Therefore, the influence of the singular value on the specified result of the optimum laser energy setting value can be further reduced as compared with the crystallization state measuring method B.

  In the above description, an average value of the M first laser energy setting values and the M second laser energy setting values is obtained to specify the actual laser energy setting value. Yes. However, in practice, among the M first maximum values, among the M next largest values, among the M first second maximum values, and the M second maximum values. There is a high possibility that some of them exhibit the same value (that is, overlap). Therefore, the actual amount of calculation in each of the above calculations is reduced.

  In the crystallization state measuring method of the present embodiment, the number of scattered light luminance measurement points is larger than that in the crystallization state measuring method of the first embodiment. However, compared with the method for measuring the crystallization state disclosed in Patent Document 2 in which the scattered light luminance measurement is performed for all measurement candidate points 9, the measurement time is sufficiently shortened to prevent the operating rate from deteriorating. It can be done.

  In each of the above embodiments, as a method for measuring the crystallization state, the case where the occurrence of unevenness at the crystal grain boundary is observed and measured with illumination and a camera has been described. However, relative to the crystallization state and the measured value, Any other measuring means such as Raman spectroscopy may be used as long as it is a measuring means capable of obtaining a specific correlation.

It is a block diagram of the crystallization state measuring apparatus which implement | achieves the crystallization state measuring method of this invention. It is a top view which shows a power monitor board | substrate. It is a figure which shows the measured value for every measurement candidate row | line | column obtained as a result of power monitor measurement. It is a figure which shows the relationship between the laser irradiation position and laser energy at the time of performing a laser annealing process with an excimer laser annealing apparatus. It is a figure which shows the relationship between the laser irradiation position and measurement value in three crystallization small area | regions. It is a schematic flowchart of a crystallization state measurement processing operation.

Explanation of symbols

1 ... Crystallized substrate (power monitor substrate),
2 ... substrate positioning mechanism,
3 ... Lighting,
4 ... Camera,
5 ... Image processing device,
6 ... Control device,
7 ... crystallization region,
8 ... Crystallization subregion,
9 ... Measurement candidate points,
10 ... Measurement candidate sequence,
11 ... Measurement candidate row,
13,14 ... curve,
15 ... Optimal peak,
16 ... peak point,
17 ... Minimum point,
18: Laser irradiation position.

Claims (8)

Measures the crystallization state of a crystallized region that is formed by arranging multiple crystallized small regions that have been crystallized by irradiating laser light with different energy settings on the substrate. A crystallization state measuring method for
The crystallization state of the selective crystallization small region selected from the crystallization small region is arranged in another direction different from the one direction, and a plurality of measurements set in a row in the selective crystallization small region A first measurement step for performing a first measurement at a point;
A first maximum value calculating step of calculating a maximum value of a measured value from the result of the first measurement for the selective crystallization small region and setting it as a first maximum value;
A maximum value point specifying step for specifying the position in the other direction of the measurement point exhibiting the first maximum value as a maximum value measurement point position;
The crystallization state of the plurality of crystallized subregions arranged in the one direction is measured at the plurality of measurement points arranged in the one direction and passing through the maximum value measurement point. A second measurement step for performing a second measurement;
A second maximum value calculating step of calculating the maximum value of the measured value from the result of the second measurement in the one direction and setting it as the second maximum value;
A crystallization state measurement method comprising: an energy set value specifying step for specifying an energy set value when the laser beam is irradiated to a small crystallization region including a measurement point exhibiting the second maximum value. In the crystallization state measuring method according to claim 1,
A plurality of selective crystallization subregions selected in the first measurement step and subjected to the first measurement;
In the first maximum value calculating step, representative values of a plurality of maximum values calculated from a result of the first measurement for the plurality of selective crystallization small regions are calculated and set as the first maximum value. Crystallization state measurement method. Measures the crystallization state of a crystallized region that is formed by arranging multiple crystallized small regions that have been crystallized by irradiating laser light with different energy settings on the substrate. A crystallization state measuring method for
The crystallization states of a plurality of selective crystallization subregions selected from the crystallization subregions are arranged in another direction different from the one direction, and are set in a row in each of the selective crystallization subregions. A first measurement step for performing a first measurement at a plurality of measurement points;
From the result of the first measurement for the plurality of selective crystallization subregions, the maximum value of the measurement value is calculated for each selective crystallization subregion to be the first maximum value, and the measurement value is next to the maximum value. A first maximum value / next maximum value calculating step for calculating
While calculating the representative value of the plurality of first maximum values and specifying the position in the other direction of the measurement point that exhibits the measurement value closest to the representative value of the first maximum value as the maximum value measurement point position, The maximum value point for calculating the representative value of the plurality of next large values and specifying the position in the other direction of the measurement point exhibiting the measurement value closest to the representative value of the second large value as the next large value measurement point position・ Next maximum point identification step,
The first measurement point sequence arranged in the one direction passing through the maximum value measurement point set in each crystallization subregion, and the crystallization state of the plurality of crystallization subregions arranged in the one direction, And a second measurement step for performing a second measurement to be measured in the second measurement point sequence set in each crystallization small region and arranged in the one direction passing through the next maximum value measurement point;
The maximum value is calculated from the result of the second measurement for the first measurement point sequence to obtain the second maximum value, while the maximum value is calculated from the result of the second measurement for the second measurement point sequence. A second and third maximum value calculating step for setting the third maximum value;
The energy set value when the laser beam is irradiated to the crystallization small region including the measurement point exhibiting the second maximum value is set as the first energy set value, while the measurement point exhibiting the third maximum value is included. The energy set value when the laser beam is irradiated to the crystallization small region is set as the second energy set value, and the energy set value is obtained by averaging the first energy set value and the second energy set value. A crystallized state measuring method comprising an energy set value specifying step for specifying. Measures the crystallization state of a crystallized region that is formed by arranging multiple crystallized small regions that have been crystallized by irradiating laser light with different energy settings on the substrate. A crystallization state measuring method for
The crystallization states of a plurality of selective crystallization subregions selected from the crystallization subregions are arranged in another direction different from the one direction, and are set in a row in each of the selective crystallization subregions. A first measurement step for performing a first measurement at a plurality of measurement points;
From the result of the first measurement for the plurality of selective crystallization subregions, the maximum value of the measurement value is calculated for each selective crystallization subregion to be the first maximum value, and the measurement value is next to the maximum value. A first maximum value / next maximum value calculating step for calculating
While the position in the other direction of the measurement point exhibiting the plurality of first maximum values is specified as the maximum value measurement point position, the position in the other direction of the measurement point exhibiting the plurality of second largest values is the second largest value. Maximum value point / next maximum point specification step specified as measurement point position,
The crystallization state of the plurality of crystallized subregions arranged in the one direction is set in each crystallized subregion and the plurality of first ones arranged in the one direction passing through the plurality of maximum value measurement points. A second measurement is performed using a measurement point sequence and a plurality of second measurement point sequences set in each crystallization small region and arranged in the one direction passing through the plurality of next largest measurement points. A second measurement step;
A maximum value is calculated from the result of the second measurement for the plurality of first measurement point sequences to obtain a plurality of second maximum values, while from the result of the second measurement for the plurality of second measurement point sequences. Second and third maximum value calculating steps for calculating a maximum value to obtain a plurality of third maximum values;
While setting the energy setting value when the laser beam is irradiated to the plurality of crystallization small regions including the measurement points exhibiting the plurality of second maximum values as the first energy setting value, the plurality of third maximum values The energy setting value when the laser beam is irradiated to a plurality of crystallization small regions including the measurement points exhibiting the second energy setting value, the plurality of first energy setting values and the plurality of second A crystallization state measuring method comprising: an energy setting value specifying step for calculating an energy setting value by calculating a representative value of the energy setting value. In the crystallization state measuring method according to any one of claims 2 to 4,
The representative values are calculated by calculating the average value of all the values to be calculated, the average value of the values obtained by removing the maximum value or the minimum value from all the values to be calculated, and all the values to be calculated. A crystal obtained by calculating any one of an average value of values obtained by removing the maximum value and the minimum value from the values and a mode value of all values to be calculated; Measured state measurement method. In the crystallization state measuring method according to any one of claims 1 to 4,
The crystallization state is measured by irradiating the surface of the substrate with light and measuring the intensity of scattered light in a direction facing the main surface of the substrate. Substrate positioning means for positioning the measurement position of the substrate at a predetermined position;
Illumination means for irradiating the surface of the substrate with light;
Imaging means for imaging the main surface of the substrate from the side facing the main surface of the substrate to obtain image data;
Image processing means for processing image data from the imaging means;
And having control means for controlling operations including positioning of the substrate by the substrate positioning means or processing of image data by the image processing means,
Under the control of the control means,
The substrate positioning means is formed on the substrate so as to be arranged in one direction, and from one of a plurality of crystallization small regions subjected to crystallization treatment by being irradiated with laser light with different energy setting values. Select the subregion,
The substrate positioning means, the illuminating means, the imaging means and the image processing means are arranged such that the crystallization state of the selective crystallization small region is arranged in another direction different from the one direction, and in the selective crystallization small region. Perform a first measurement to measure at multiple measurement points set in a row,
The image processing means calculates the maximum value of the measurement value from the result of the first measurement with respect to the selective crystallization small region to obtain the first maximum value, and sets the position of the measurement point exhibiting the first maximum value to the maximum. Specify the value measurement point position,
The substrate positioning means, the illumination means, the imaging means, and the image processing means are configured such that the crystallization states of the plurality of crystallization small regions arranged in one direction are set in each crystallization small region and the maximum value measurement point A second measurement is performed to measure at a plurality of measurement points arranged in the one direction passing through
The image processing means calculates the maximum value of the measurement value from the result of the second measurement to obtain the second maximum value, and the laser beam is applied to the crystallization small region including the measurement point exhibiting the second maximum value. An apparatus for measuring a crystallization state characterized by specifying an energy set value when irradiated. In the crystallization state measuring apparatus according to claim 7,
The crystallization state measuring apparatus, wherein the image data acquired by the imaging means is an intensity value of scattered light from the substrate.

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