WO2017183980A4 - Method and system for the removal and/or avoidance of contamination in charged particle beam systems - Google Patents

Method and system for the removal and/or avoidance of contamination in charged particle beam systems Download PDF

Info

Publication number
WO2017183980A4
WO2017183980A4 PCT/NL2017/050256 NL2017050256W WO2017183980A4 WO 2017183980 A4 WO2017183980 A4 WO 2017183980A4 NL 2017050256 W NL2017050256 W NL 2017050256W WO 2017183980 A4 WO2017183980 A4 WO 2017183980A4
Authority
WO
WIPO (PCT)
Prior art keywords
charged particle
charged
particle optical
optical element
aperture
Prior art date
Application number
PCT/NL2017/050256
Other languages
French (fr)
Other versions
WO2017183980A3 (en
WO2017183980A2 (en
Inventor
Marc SMITS
Johan Joost Koning
Chris Franciscus Jessica LODEWIJK
Hindrik Willem Mook
Ludovic Lattard
Original Assignee
Mapper Lithography Ip B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip B.V. filed Critical Mapper Lithography Ip B.V.
Priority to RU2018140708A priority Critical patent/RU2018140708A/en
Priority to CN201780024598.XA priority patent/CN109075004B/en
Priority to EP17728669.7A priority patent/EP3446325A2/en
Priority to JP2018536266A priority patent/JP7065027B2/en
Priority to KR1020187033067A priority patent/KR102501182B1/en
Priority to KR1020237005258A priority patent/KR102626796B1/en
Publication of WO2017183980A2 publication Critical patent/WO2017183980A2/en
Publication of WO2017183980A3 publication Critical patent/WO2017183980A3/en
Publication of WO2017183980A4 publication Critical patent/WO2017183980A4/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/04Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B17/00Methods preventing fouling
    • B08B17/02Preventing deposition of fouling or of dust
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472Deflecting along given lines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/18Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32798Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853Hygiene
    • H01J37/32862In situ cleaning of vessels and/or internal parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02Details
    • H01J2237/022Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/043Beam blanking
    • H01J2237/0435Multi-aperture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/045Diaphragms
    • H01J2237/0451Diaphragms with fixed aperture
    • H01J2237/0453Diaphragms with fixed aperture multiple apertures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/049Focusing means
    • H01J2237/0492Lens systems

Abstract

A charged particle beam system is disclosed, comprising: • a charged particle beam generator for generating a beam (8) of charged particles; • a charged particle optical column (226) arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; • a source (62) for providing a cleaning agent; • a conduit (64) connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element; wherein the charged particle optical element comprises: • a charged particle transmitting aperture (46) for transmitting and/ or influencing the beam of charged particles, and • at least one vent hole (60) for providing a flow path between a first side and a second side of the charged particle optical element. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

Claims

AMENDED CLAIMS received by the International Bureau on 8 May 2018 (08.05.18) + STATEMENT
1. Method for preventing or removing contamination of a charged particle transmitting aperture in a charged particle beam system arranged in a vacuum chamber, the charged particle beam system comprising a charged particle optical column for projecting a beam of charged particles onto a target, said charged particle optical column comprising a charged particle optical element for influencing the beam of charged particles,
said charged particle optical element comprises said charged particle transmitting aperture for transmitting and/or influencing said beam of charged particles, and a vent hole providing a flow path from a first side to a second side of said charged particle optical element;
the method comprising the following steps:
- introducing a cleaning agent towards said charged particle optical element while a beam of charged particles is present at or near said charged particle optical element;
- maintaining a vacuum in said vacuum chamber, wherein the step of maintaining a vacuum comprises enabling a flow or movement of species at lea3t through said charged particle optical element via said vent hole to a vacuum pump connected to said vacuum chamber; and
preventing any charged particles passing through said at least one vent hole from reaching said target, or preventing charged particles from reaching the vent hole.
2. Method according to claim 1, wherein said charged particle optical element is stopping or at least partly blocking said beam of charged particles and/or wherein said charged particle transmitting aperture is acting as a current limiting aperture.
3. Charged particle beam system (201, 301), comprising:
- a charged particle beam generator (16, 216) for generating a beam of charged particles (20);
- a charged particle optical column (206, 306) arranged in a vacuum chamber, wherein said charged particle optical column is arranged for projecting said beam of charged particles onto a target (12), and wherein said charged particle optical column comprises a charged particle optical element (226) for influencing said beam of charged particles;
- a source (62) for providing cleaning agent (100);
- a conduit (64) connected to said source and arranged for introducing said cleaning agent towards said charged particle optical element;
wherein said charged particle optical element comprises:
- a charged particle transmitting aperture (46) for transmitting and/or influencing said beam of charged particles, and
- a vent hole (60, 60a, 60b) for providing a flow path (Γ3) between a first side and a second aide of said charged particle optical element,
wherein the vent hole has a larger cross section than a cross section of the charged particle transmitting aperture,
wherein one or more elements or components are arranged downstream of the charged particle optical element to block a further path of any charged particles transmitted through the vent hole, or an element or component is provided upstream the vent hole, for preventing charged particles from reaching the vent hole.
4. System according to claim 3, wherein said charged particle optical element is arranged for stopping or at least partly blocking said beam of charged particles and/or said charged particle transmitting aperture acting as a current limiting aperture.
5. System according to claim 3 or 4, wherein the charged particle optical element comprises a plurality of said vent holes and a plurality of said charged particle transmitting apertures, said vent holes arranged next to said charged particle transmitting apertures.
6. System according to any one of claims 3-5, wherein said vent holes are arranged with a pitch (p) which is equal to or larger than a dimension of said vent holes, said pitch in particular being in the range from 1 to 3 times the dimension of said vent holes.
7. System according to any one of claims 3-6, wherein said charged particle optical element comprises a beam stop element (226) , said beam stop element comprising:
a plurality of said charged particle transmitting apertures (46) for passage of charged particle beams, and a non-aperture area for blocking passage of charged particles, and
- a plurality of vent holes (60, 60ar 60b for providing a flow path (F3) through said beam stop element.
8. System according to claim 7, said system further comprising
- a projection lens (29) comprising a plurality of projection lens apertures (58) for focusing said charged particle beams (8), wherein said projection lens is arranged downstream said beam stop element, and wherein said projection lens and said beam stop element are arranged such that any charged particles passing through one or more of said vent holes are blocked by a non- aperture area of said projection lens.
9. System according to claim 8, wherein said vent holes have a cross section in a range from half of a cross section of said projection lens apertures to two times the cross section of said projection lens apertures.
10. System according to claim 8 or 9, wherein said projection lens further comprises a plurality of dummy apertures (70) arranged around a group of said projection lens apertures, wherein said vent holes are arranged such that any charged particle passing through said vent holes are blocked by an area located laterally outside said dummy apertures.
11. System according to any one of claims 3-10, further comprising
- a second aperture element (23) comprising a plurality of apertures (66) for forming a plurality of charged particle beams (B) from said beam (20) of charged particles, said second aperture element arranged between said charged particle beam generator and said charged particle optical element, and
- a restriction element (76) provided between said charged particle beam generator and said second aperture element, said restriction element arranged for preventing or at least reducing a flow of said cleaning agent and/or products thereof to said charged particle beam generator.
12. System according to claim 11, further comprising:
- a beam generator module, said charged particle beam generator being arranged in said beam generator module; a modulation module (225) , said second aperture element being arranged in said modulation module; wherein said restriction element is movably connected to said beam generator module and arranged for abutting said modulation module by means of gravity and/or a spring force.
13. System according to claim 12, wherein said restriction element (76) is connected to a first wall (82) of said beam generator module, said restriction element at least partly surrounding a perimeter of an opening (80) In said first wall for passage of said beam of charged particles, wherein said restriction element comprises an at least partially ring-shaped element (76), in particular a ceramic ring, said at least partially ring-shaped element being movably arranged with respect to said first wall in a direction toward or away from said modulation module .
14. System according to claim 13, further comprising a confining element (78) for confining a movement of said restriction element with respect to said first wall, wherein said restriction element is provided with one or more protrusions (77) and said confining element (78) is arranged to cooperate with said protrusions to confine movement of said restriction element.
15. System according to any one of claims 11-14, further comprising:
- a modulation element (24) arranged downstream said second aperture element (23) , said modulation element comprising a second plurality of apertures (46) for passage of said charged particle beams and deflectors associated with said second plurality of apertures, said deflectors arranged to selectively deflect or not deflect said charged particle beams, and
said charged particle optical element comprising a beam stop element (226) comprising a third plurality of apertures (46) for passage of charged particle beams (8) and a blocking area for blocking charged particle beams, said beam stop element arranged downstream said modulation element,
said modulation element and said beam stop element arranged to function together to let pass or to block said selectively deflected charged particle beams, wherein said conduit (64) is arranged to direct said cleaning agent toward said beam stop element -
16. Method for preventing or removing contamination of a charged particle transmitting aperture in the charged particle beam system according to any one of the preceding claims 3-15, the method comprising the steps of:
- introducing a cleaning agent towards said charged particle optical element while said beam generator (16, 216) is generating said beam of charged particles and/or while a second charged particle beam source is generating a beam of charged particles which is directed toward said charged particle optical element; and
- maintaining a vacuum in said vacuum chamber
(2) while introducing said cleaning agent,
wherein the step of maintaining a vacuum comprises providing a flow or movement of species at least through said charged particle optical element via said vent hole (60, 60a, 60b) to a vacuum pump connected to said vacuum chamber
further comprising the step of preventing any charged particles passing through said at least one vent hole from reaching said target, and/or blocking charged particles upstream of the at least one vent hole.
17. Method according to claim 16, wherein said charged particles passing through said vent hole are prevented from reaching said target (12) by blocking these charged particles by non-aperture areas comprised in a further aperture element arranged downstream said charged particle optical element, said further aperture element comprising one or more apertures for passage of charged particle beams having passed through said charged particle transmitting aperture.
18. Method according to any one of claims 16-17, further comprising the following steps:
- arranging said charged particle beam generator in a beam generator module and said charged particle optical element in a modulation module,
providing a restriction element, movably connected to said beam generator module and abutting said modulation module by means of gravity and/or spring force.
19. Method according to any one of claims 16 to
18, comprising introducing said cleaning agent in a region of said charged particle optical column where said charged particles have an energy in the range of 1-lOkEV, in particular around or lower than 5keV.
20. Method according to any one of claims 16 to
19, wherein one or more charged particle beams is present at or near the charged particle optical element while directing said cleaning agent toward the charged particle optical element.
21. A charged particle beam system, comprising: a charged particle beam generator for generating a beam of charged particles;
- a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element comprising a plurality of charged particle transmitting apertures;
- a source for providing a cleaning agent;
a conduit connected to the source for introducing the cleaning agent towards the charged particle optical element;
a second aperture element, comprising a plurality of apertures for forming a plurality of charged particle beams from the beam of charged particles, the second aperture element arranged between the charged particle beam generator and the charged particle optical element, and
- a restriction element provided between the charged particle beam generator and the second aperture element, the restriction element preventing or at least minimizing a flow or passage of said cleaning agent and/or products thereof to the charged particle beam generator.
22. System according to claim 21, further comprising:
- a beam generator module (216), said charged particle beam generator being · arranged in said beam generator module;
a modulation module (225), said second aperture element being arranged in said modulation module;
wherein said restriction element is movably connected to said beam generator module and arranged for abutting said modulation module by means of gravity and/or a spring force.
23. System according to claim 22, wherein said restriction element (76) is connected to a first wall (82) of said beam generator module, said restriction element at least partly surrounding a perimeter of an opening (80) in said first wall for passage of said beam of charged particles, wherein said restriction element comprises an at least partially ring-shaped element (76), said at least partially ring-shaped element being movably arranged with respect to said first wall in a direction toward or away from said modulation module.

Statement under Article 19(1 ) PCT

Independent claim 3 has been amended by introducing the subject-matter that one or more elements or components are arranged downstream of the charged particle optical element to block a further path of any charged particles transmitted through the vent hole, or that an element or component is provided upstream the vent hole, for preventing charged particles from reaching the vent hole.

The element(s) or component^} for blocking a further path of any charged particles transmitted through the vent hole, or for preventing charged particles from reaching the vent hole, provide(s) an additional feature for preventing the target from being irradiated by charged particles travelled through the vent hole(s),

US2015/0332899 shows in figures 8- 10 a modular lithography system with an illumination optics module 201 , an aperture array and condenser lens module 202, a beam switching module 203, and a projection optics module 204, slideable in and out from an alignment frame. The alignment frame comprises an alignment inner sub-frame 205 and an alignment outer sub-frame 206, supported by a frame 208. An arrangement for removal of contaminant deposition is partially integrated into the frame 208.

US2001 /0028044 shows in figure 10 a multi-axis electron lens 1 6 with a lens part 202 having a plurality of lens openings 204 through which electron beams can pass, respectively, and a coil part 200 provided in an area surrounding the lens part 202 to generate a magnetic field. It is desirable that dummy openings 205 with different opening sizes, through which no electron beam passes, are arranged in the lens part 202.

US201 3/0206999 shows in figure 3B an electron lens array with three electrodes 1 a-c and a distance defining member 4 sandwiched between electrodes l a and 1 b and between electrodes 1 b and 1 c. In order to increase the exhaust conductance between the lower electrode 1 a and the object 7, six through holes 3b which pass through the electrodes are provided near corners and edges of the electrodes 1 a, 1 b, and 1 c.

US8,686,378 shows in figure 1 an electrostatic lens 21 including three electrode plates 3a-c. The intervals between electrode plates 3 are maintained at an interval by spacers 6. A first region 2 including first openings 1 , through which electron beams pass, is provided. Second openings 8, different from the first openings 1 , are formed in a second region 4, through which the electron beams from the electrode plates 3 do not pass, so as to surround the first region 2.

None of the documents cited in the prior art discloses element(s) or component(s) as defined in independent claim 3. Therefore, any combination of the cited documents would not lead to the charged particle beam system as defined in the amended independent claim 3- Therefore, the amended independent claim 3 is novel and inventive over the prior art cited in the international search report. The above arguments apply mutatis mutandis to the amended independent claims 1 and 1 7.

PCT/NL2017/050256 2016-04-21 2017-04-21 Method and system for the removal and/or avoidance of contamination in charged particle beam systems WO2017183980A2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
RU2018140708A RU2018140708A (en) 2016-04-21 2017-04-21 METHOD AND SYSTEM FOR REMOVING AND / OR PREVENTING POLLUTION IN SYSTEMS WITH BEAMS OF CHARGED PARTICLES
CN201780024598.XA CN109075004B (en) 2016-04-21 2017-04-21 Method and system for removing and/or avoiding contamination in a charged particle beam system
EP17728669.7A EP3446325A2 (en) 2016-04-21 2017-04-21 Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP2018536266A JP7065027B2 (en) 2016-04-21 2017-04-21 Methods and systems for decontamination and / or avoidance in charged particle beam systems
KR1020187033067A KR102501182B1 (en) 2016-04-21 2017-04-21 Method and system for removal and/or avoidance of contamination in charged particle beam systems
KR1020237005258A KR102626796B1 (en) 2016-04-21 2017-04-21 Method and system for the removal and/or avoidance of contamination in charged particle beam systems

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/135,138 US9981293B2 (en) 2016-04-21 2016-04-21 Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US15/135,138 2016-04-21

Publications (3)

Publication Number Publication Date
WO2017183980A2 WO2017183980A2 (en) 2017-10-26
WO2017183980A3 WO2017183980A3 (en) 2018-04-19
WO2017183980A4 true WO2017183980A4 (en) 2018-06-28

Family

ID=59021557

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2017/050256 WO2017183980A2 (en) 2016-04-21 2017-04-21 Method and system for the removal and/or avoidance of contamination in charged particle beam systems

Country Status (8)

Country Link
US (5) US9981293B2 (en)
EP (1) EP3446325A2 (en)
JP (2) JP7065027B2 (en)
KR (2) KR102501182B1 (en)
CN (2) CN109075004B (en)
RU (1) RU2018140708A (en)
TW (2) TWI824520B (en)
WO (1) WO2017183980A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110014131A1 (en) 2009-07-20 2011-01-20 Nanoink, Inc. Nanomolding micron and nano scale features
EP2528592A2 (en) 2010-01-26 2012-12-05 NanoInk, Inc. Moire patterns generated by angular illumination of surfaces
JP2013542106A (en) 2010-10-29 2013-11-21 ナノインク・インコーポレーテッド Injection molding of micron and nanoscale structures for pharmaceutical brand protection
US20130292879A1 (en) 2012-05-02 2013-11-07 Nanoink, Inc. Molding of micron and nano scale features
US10312091B1 (en) * 2015-10-13 2019-06-04 Multibeam Corporation Secure permanent integrated circuit personalization
US9981293B2 (en) * 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10307803B2 (en) * 2016-07-20 2019-06-04 The United States Of America As Represented By Secretary Of The Navy Transmission window cleanliness for directed energy devices
NL2022156B1 (en) 2018-12-10 2020-07-02 Asml Netherlands Bv Plasma source control circuit
CN111266368B (en) * 2020-01-20 2020-09-22 哈尔滨工业大学 Method for cleaning diaphragm of transmission electron microscope by focused ion beam
EP4181167A1 (en) 2021-11-11 2023-05-17 ASML Netherlands B.V. Charged particle assessment system and method
WO2023083545A1 (en) 2021-11-11 2023-05-19 Asml Netherlands B.V. Charged particle assessment system and method

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678333A (en) * 1970-06-15 1972-07-18 American Optical Corp Field emission electron gun utilizing means for protecting the field emission tip from high voltage discharges
US4555303A (en) 1984-10-02 1985-11-26 Motorola, Inc. Oxidation of material in high pressure oxygen plasma
US4870030A (en) 1987-09-24 1989-09-26 Research Triangle Institute, Inc. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
US5466942A (en) 1991-07-04 1995-11-14 Kabushiki Kaisha Toshiba Charged beam irradiating apparatus having a cleaning means and a method of cleaning a charged beam irradiating apparatus
JP3253675B2 (en) * 1991-07-04 2002-02-04 株式会社東芝 Charged beam irradiation apparatus and method
CN1078768A (en) 1992-05-16 1993-11-24 S·H·福尔 Intaker controller
JP3258104B2 (en) * 1992-12-21 2002-02-18 株式会社東芝 Charged beam irradiation method and apparatus
JPH0737807A (en) 1993-07-21 1995-02-07 Hitachi Ltd Method and device for surface treatment by use of atom and molecular beam
JP3466744B2 (en) 1993-12-29 2003-11-17 株式会社東芝 Charged beam device with cleaning function and method of cleaning charged beam device
JPH09245716A (en) 1996-03-04 1997-09-19 Hitachi Ltd Electron beam drawing method and drawing apparatus, and semiconductor integrated circuit using this
JP3827359B2 (en) 1996-03-19 2006-09-27 富士通株式会社 Charged particle beam exposure method and apparatus
JPH09293472A (en) 1996-04-26 1997-11-11 Fujitsu Ltd Charged particle beam exposure device, its exposure method, and its manufacture
US5788778A (en) 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
JPH10223512A (en) * 1997-02-10 1998-08-21 Nikon Corp Electron beam projection aligner
US8075789B1 (en) 1997-07-11 2011-12-13 Applied Materials, Inc. Remote plasma cleaning source having reduced reactivity with a substrate processing chamber
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
GB9822294D0 (en) 1998-10-14 1998-12-09 Univ Birmingham Contaminant removal method
US6394109B1 (en) 1999-04-13 2002-05-28 Applied Materials, Inc. Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system
JP2001148340A (en) 1999-11-19 2001-05-29 Advantest Corp Method and apparatus for aligning with charged particle beam
US20020053353A1 (en) 2000-03-13 2002-05-09 Shintaro Kawata Methods and apparatus for cleaning an object using an electron beam, and device-fabrication apparatus comprising same
US6465795B1 (en) 2000-03-28 2002-10-15 Applied Materials, Inc. Charge neutralization of electron beam systems
JP4401614B2 (en) 2000-04-04 2010-01-20 株式会社アドバンテスト Multi-beam exposure apparatus using multi-axis electron lens, multi-axis electron lens for focusing a plurality of electron beams, and semiconductor device manufacturing method
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
JP2002157970A (en) 2000-11-21 2002-05-31 Nikon Corp Evaluating device and method using electron beam and method of manufacturing device by using such device and method
US20020144706A1 (en) 2001-04-10 2002-10-10 Davis Matthew F. Remote plasma cleaning of pumpstack components of a reactor chamber
JP4011876B2 (en) 2001-09-17 2007-11-21 本田技研工業株式会社 Fuel supply device for internal combustion engine
US6772776B2 (en) 2001-09-18 2004-08-10 Euv Llc Apparatus for in situ cleaning of carbon contaminated surfaces
JP2003124089A (en) 2001-10-09 2003-04-25 Nikon Corp Charged particle beam projection aligner and exposure method
JP4258840B2 (en) * 2002-04-22 2009-04-30 株式会社ニコン Support apparatus, optical apparatus and exposure apparatus, and device manufacturing method
KR101060557B1 (en) 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. Lithography System
EP2523207A3 (en) 2002-10-30 2015-08-26 Mapper Lithography IP B.V. Electron beam generator
DE60323927D1 (en) 2002-12-13 2008-11-20 Asml Netherlands Bv Lithographic apparatus and method of making a device
SG135934A1 (en) 2002-12-20 2007-10-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
TWI251117B (en) 2002-12-20 2006-03-11 Asml Netherlands Bv Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system
EP1602121B1 (en) 2003-03-10 2012-06-27 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
JP4949843B2 (en) 2003-05-28 2012-06-13 マッパー・リソグラフィー・アイピー・ビー.ブイ. Charged particle beamlet exposure system
JP4664293B2 (en) 2003-07-30 2011-04-06 マッパー・リソグラフィー・アイピー・ビー.ブイ. Modulator circuit
JP2006128542A (en) 2004-11-01 2006-05-18 Nec Electronics Corp Method for manufacturing electronic device
DE102005040267B4 (en) * 2005-08-24 2007-12-27 Universität Karlsruhe Method for producing a multilayer electrostatic lens arrangement, in particular a phase plate and such a phase plate
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP2007088386A (en) * 2005-09-26 2007-04-05 Advantest Corp Electron beam exposure apparatus and method of cleaning it
US7465943B2 (en) 2005-12-08 2008-12-16 Asml Netherlands B.V. Controlling the flow through the collector during cleaning
JP2007172862A (en) 2005-12-19 2007-07-05 Hitachi High-Technologies Corp Cleaning device for charged particle beam source, and charged particle beam device using same
DE602006015768D1 (en) * 2006-02-23 2010-09-09 Integrated Circuit Testing Particle beam device with ozone source
TWI432908B (en) 2006-03-10 2014-04-01 Mapper Lithography Ip Bv Lithography system and projection method
JP4952375B2 (en) 2007-05-23 2012-06-13 株式会社明電舎 Resist removing method and apparatus
CN100591801C (en) 2007-09-30 2010-02-24 南京大学 Device for rapid large-area preparation of thin film material and setting method
JP5017232B2 (en) 2007-10-31 2012-09-05 エーエスエムエル ネザーランズ ビー.ブイ. Cleaning apparatus and immersion lithography apparatus
JP5619629B2 (en) 2008-02-26 2014-11-05 マッパー・リソグラフィー・アイピー・ビー.ブイ. Projection lens construction
WO2009106397A1 (en) 2008-02-26 2009-09-03 Mapper Lithography Ip B.V. Projection lens arrangement
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
TWI473140B (en) * 2008-04-11 2015-02-11 Ebara Corp Sample observation method and apparatus, and inspection method and apparatus using the same
EP2301059A1 (en) * 2008-05-23 2011-03-30 Mapper Lithography IP B.V. Imaging system
CN102113083B (en) 2008-06-04 2016-04-06 迈普尔平版印刷Ip有限公司 To the method and system that target exposes
US7967913B2 (en) 2008-10-22 2011-06-28 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
US8254484B2 (en) 2009-01-13 2012-08-28 Samsung Electronics Co., Ltd. Method of dirty paper coding using nested lattice codes
CN101931134B (en) 2009-06-18 2013-04-03 富士康(昆山)电脑接插件有限公司 Connector
KR20120088780A (en) 2009-10-26 2012-08-08 마퍼 리쏘그라피 아이피 비.브이. Charged particle multi-beamlet lithography system with modulation device
CN102098863B (en) 2009-12-14 2013-09-11 北京北方微电子基地设备工艺研究中心有限责任公司 Electrode board for plasma processing equipment and method for removing process sediments
JP5568419B2 (en) * 2010-09-06 2014-08-06 株式会社リコー Surface charge distribution measuring method and surface charge distribution measuring apparatus
JP2012061820A (en) * 2010-09-17 2012-03-29 Dainippon Printing Co Ltd Molding method of fiber-reinforced composite material
CN107104029B (en) * 2010-09-28 2020-10-09 以色列实用材料有限公司 Particle-optical system and arrangement and particle-optical component for use in such a system and arrangement
JP5709535B2 (en) 2011-01-07 2015-04-30 キヤノン株式会社 Electron beam drawing apparatus and article manufacturing method using the same
JP5709546B2 (en) 2011-01-19 2015-04-30 キヤノン株式会社 Energy beam drawing apparatus and device manufacturing method
JP5785436B2 (en) 2011-05-09 2015-09-30 キヤノン株式会社 Charged particle beam drawing apparatus, cleaning method thereof, and device manufacturing method
US20130020699A1 (en) 2011-07-06 2013-01-24 Mediatek Inc. Package structure and method for fabricating the same
CN102255387B (en) 2011-07-11 2014-06-18 兰州陇能电力科技有限公司 Monitoring system of electric equipment
JP5777445B2 (en) * 2011-08-12 2015-09-09 キヤノン株式会社 Charged particle beam drawing apparatus and article manufacturing method
CN103858057A (en) 2011-09-09 2014-06-11 迈普尔平版印刷Ip有限公司 Vibration isolation module and substrate processing system
JP2013084638A (en) * 2011-10-05 2013-05-09 Canon Inc Electrostatic lens
US9420515B2 (en) 2011-10-18 2016-08-16 Itron, Inc. Endpoint repeater functionality selection
JP2013168396A (en) * 2012-02-14 2013-08-29 Canon Inc Electrostatic type charged particle beam lens and charged particle beam device
RU2017146228A (en) * 2012-03-20 2019-02-20 МЭППЕР ЛИТОГРАФИ АйПи Б.В. UNIT AND METHOD OF TRANSFER OF RADICALS
TW201401330A (en) 2012-05-14 2014-01-01 Mapper Lithography Ip Bv Charged particle lithography system and beam generator
JP2014140009A (en) * 2012-12-19 2014-07-31 Canon Inc Lithography device and manufacturing method of goods
NL2011401C2 (en) * 2013-09-06 2015-03-09 Mapper Lithography Ip Bv Charged particle optical device.
JP2015153763A (en) 2014-02-10 2015-08-24 株式会社ニューフレアテクノロジー Charged particle beam drawing apparatus and charged particle beam drawing method
US9981293B2 (en) * 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6188182B1 (en) 2017-04-27 2017-08-30 株式会社バカン Vacant seat management device and vacant seat management program

Also Published As

Publication number Publication date
WO2017183980A3 (en) 2018-04-19
US20200230665A1 (en) 2020-07-23
TW202235180A (en) 2022-09-16
KR20180132884A (en) 2018-12-12
US10632509B2 (en) 2020-04-28
US20240017301A1 (en) 2024-01-18
US20180236505A1 (en) 2018-08-23
KR102626796B1 (en) 2024-01-19
US20210237129A1 (en) 2021-08-05
US10987705B2 (en) 2021-04-27
CN113871279A (en) 2021-12-31
CN109075004A (en) 2018-12-21
KR20230027325A (en) 2023-02-27
TW201801815A (en) 2018-01-16
WO2017183980A2 (en) 2017-10-26
US11738376B2 (en) 2023-08-29
JP7065027B2 (en) 2022-05-11
RU2018140708A (en) 2020-05-21
JP7154355B2 (en) 2022-10-17
CN109075004B (en) 2021-10-26
TWI765884B (en) 2022-06-01
TWI824520B (en) 2023-12-01
KR102501182B1 (en) 2023-02-20
JP2019507951A (en) 2019-03-22
EP3446325A2 (en) 2019-02-27
US9981293B2 (en) 2018-05-29
JP2021185571A (en) 2021-12-09
US20170304878A1 (en) 2017-10-26

Similar Documents

Publication Publication Date Title
WO2017183980A4 (en) Method and system for the removal and/or avoidance of contamination in charged particle beam systems
KR20240042242A (en) Apparatus of plural charged-particle beams
EP3232444B1 (en) Multi-axis magnetic immersion objective lens
US10211023B2 (en) Aperture set for multi-beam and multi-charged particle beam writing apparatus
KR20120114382A (en) Weakening focusing effect of acceleration-deceleration column of ion implanter
JP3803105B2 (en) Electron beam application equipment
TWI830168B (en) Flood column and charged particle apparatus
JP2009194252A (en) Charged beam drawing apparatus
EP4307335A1 (en) Isolating spacer for electron-optical assembly
US20140065549A1 (en) Drawing apparatus and method of manufacturing article
EP4095881A1 (en) Charged particle device
KR101867352B1 (en) System and method for patterning substrate
KR101156180B1 (en) Micro E beam device which can align in vacuum condition
JP2015149449A (en) charged particle beam lithography system, contaminant removal method, and device manufacturing method
JPH03248421A (en) Ion implantation

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2018536266

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20187033067

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2017728669

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2017728669

Country of ref document: EP

Effective date: 20181121

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17728669

Country of ref document: EP

Kind code of ref document: A2