Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3492—Variation of parameters during sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
  • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/54—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
  • H01J37/3405—Magnetron sputtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3414—Targets
  • H01J37/3417—Arrangements
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
  • H01J37/3455—Movable magnets
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3464—Operating strategies
  • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Definitions

• a layer on a substrate with a high uniformity is an issue in many technological fields.
• thickness uniformity and uniformity of electrical properties may be an issue for reliably manufacturing display channel areas.
• a uniform layer typically facilitates manufacturing reproducibility.
• a static sputtering can be provided, e.g. for TFT processing, wherein the plasma can be stabilized prior to deposition on the pristine substrate.
• the term static deposition process which is different as compared to dynamic deposition processes, does not exclude any movement of the substrate as would be appreciated by a skilled person.
• a static deposition process can include, for example, a static substrate position during deposition, an oscillating substrate position during deposition, an average substrate position that is substantially constant during deposition, a dithering substrate position during deposition, a wobbling substrate position during deposition, a deposition process for which the cathodes are provided in one chamber, i.e.
• substantially perpendicular can relate to a substantially perpendicular orientation e.g. of the rotation axis and the support surface or substrate surface, wherein a deviation of a few degrees, e.g. up to +/-10° or even up to +/-15°, from an exact perpendicular orientation can be still considered to be " substantially perpendicular”.
• the examples described herein can be utilized for deposition on large area substrates, e.g. for lithium battery manufacturing or electrochromic windows.
• a plurality of thin film batteries can be formed on a large area substrate using the cooling device for processing a layer including a material having a low melting temperature.
• a description of a variation of the provided power to the three or more rotatable targets 20 can be understood as a variation of a voltage provided to the three or more rotatable targets 20, and vice versa.
• the sputter power may be varied which can lead to a variation of the power applied to the three or more rotatable targets.
• the voltage can be varied in a range from -200 V to -800 V, specifically in a range from -300 V to -550 V.
• a function is stored in a memory and a variation is carried out according to the function.
• the function can be a function dependent on the angular position, i.e. the function can include different values for different angular positions.
• an amount of material that is sputtered on the substrate at the angular positions can be determined by the function. That is, by including values that are dependent on the angular position, it can be possible to sputter a layer on the substrate having a high uniformity when practicing embodiments.
• the function can be determined in advance based on a number of trails.
• Fig. 1 schematically illustrates a substrate 100 being positioned on a substrate holder 110.
• a rotatable target 20 of a cathode assembly 10 can be positioned over the substrate 100.
• a negative potential can be applied to the rotatable target 20.
• a magnet assembly 25 is schematically shown located within the rotatable target 20.
• an anode (not shown in Fig. 1), to which a positive potential can be applied, can be positioned close to the rotatable target 20.
• Such an anode may have the shape of a bar, with the axis of the bar being typically arranged in parallel to the axis of the angular tube.
• a separate bias voltage may be applied to the substrate.
• the embodiments shown in the figures illustrate the rotatable target 20 to be arranged above a horizontally arranged substrate 100 and the definition of the substrate-target interconnection plane was illustratively explained with respect to those embodiments, other orientations are possible as well.
• the orientation of the substrate can also be vertical as described herein.
• it might simplify and ease transportation and handling of a substrate if the substrate is oriented vertically.
• the magnet assemblies 25 can be rotated to a plurality of different angular positions in which the magnet assemblies 25 have an angle with respect to the plane 22 perpendicularly extending from the substrate 100 to the axis 21 of the respective one of the three or more rotatable targets.
• the angle of the angular positions can be equal to or greater than -60°, specifically equal to or greater than -40°, typically equal to or greater than -15° and/or equal to or smaller than 60°, specifically equal to or smaller than 40°, typically equal to or smaller than 15°.
• the figures illustrate cross sectional schematic views of coaters along with exemplarily shown substrates.
• the cathode assemblies 10 include the rotatable target 20 which can have the shape of a cylinder.
• the rotatable target 20 extends into the paper and out of the paper when looking at the drawings.
• the magnet assemblies 25 that are also only schematically shown as cross sectional elements.
• the magnet assemblies may extend along the complete length of the cylinder. For technical reasons, it is typical that the magnet assemblies extend at least 100 % of the cylinder length, more typically at least 105 % of the cylinder length.
• the power provided to the three or more rotatable targets 20 20 is varied to compensate for the reduced material deposition at angular positions having high angles a. Specifically, the power provided to the three or more rotatable targets 20 is higher the higher the angle a of an angular positions is, and vice versa.
• the uniformity of a layer to be deposited can be increased, specifically if sputtering power is varied over time when the magnet is moved.
• Figs. 11a and 1 lb show a comparison of an electric property of a film deposited by a conventional process and using the processes described herein.
• the deposition takes place using rotatable targets arranged at the location of the solid lines spaced from the substrate.
• Fig. 11a schematically shows three film profiles measured after deposition with two different conventional processes and with the processes described herein.
• the y-axis represents a metrical unit for the film's electric property
• the x-axis represents a metrical unit for the substrate's length.
• the illustrated electric property of the film deposited by the processes described herein is more constant, specifically overall more constant than it is the case for the conventional processes.
• At least some embodiments of the present disclosure may yield a high uniformity on resistivity of an aluminum layer or an IGZO layer formed on a glass substrate. For instance, a deviation of a thickness between 0 % and 2 % or even between 0.5 % and ⁇ 1.5 % over a substrate area of 406 mm x 355 mm may be achieved. Further, a deviation of an electric property between 2 % and 8 % or even between 5 % and 7 % over a substrate area of 406 mm x 355 mm may be achieved. [96] Within the present disclosure, at least some figures illustrate cross sectional schematic views of coating systems and substrates. At least some of the illustrated targets are shaped as a cylinder.

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• Physics & Mathematics (AREA)
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• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Physical Vapour Deposition (AREA)
• Electrodes Of Semiconductors (AREA)

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• 2016
  • 2016-04-21 KR KR1020217003358A patent/KR102337787B1/ko active IP Right Grant
  • 2016-04-21 WO PCT/EP2016/058896 patent/WO2017182081A1/en active Application Filing
  • 2016-04-21 JP JP2018555149A patent/JP2019519673A/ja active Pending
  • 2016-04-21 KR KR1020187033714A patent/KR20180137536A/ko active Application Filing
  • 2016-04-21 CN CN202011084003.XA patent/CN112575301B/zh active Active
  • 2016-04-21 CN CN201680084352.7A patent/CN108884556B/zh active Active
• 2017
  • 2017-03-28 TW TW106110251A patent/TWI627300B/zh active

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