WO2017175201A3 - Low etendue high brightness light emitting devices - Google Patents

Low etendue high brightness light emitting devices Download PDF

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Publication number
WO2017175201A3
WO2017175201A3 PCT/IB2017/052036 IB2017052036W WO2017175201A3 WO 2017175201 A3 WO2017175201 A3 WO 2017175201A3 IB 2017052036 W IB2017052036 W IB 2017052036W WO 2017175201 A3 WO2017175201 A3 WO 2017175201A3
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting devices
high brightness
brightness light
emission
Prior art date
Application number
PCT/IB2017/052036
Other languages
French (fr)
Other versions
WO2017175201A2 (en
Inventor
Eric Feltin
Pascal Gallo
Original Assignee
Novagan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novagan filed Critical Novagan
Publication of WO2017175201A2 publication Critical patent/WO2017175201A2/en
Publication of WO2017175201A3 publication Critical patent/WO2017175201A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

The invention allows increasing light emitting devices luminance while improving their reliability. In particular, thanks to the invention, small surface emission, high brightness light emitting devices can be fabricated. It consists in separating the region where light is generated by electrically induced spontaneous emission, from the region where light is extracted. Between these two regions is a waveguide structure. Specific features can be used to control the angular dispersion of the extracted emission and the extraction surface, for example to minimize apparent source. It is therefore possible to achieve high luminance. The invention can be applied in lighting, projection, displays, polymer curing, microelectronic fabrication, telecommunications or biophotonics for example.
PCT/IB2017/052036 2016-04-08 2017-04-07 Low etendue high brightness light emitting devices WO2017175201A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IB2016052023 2016-04-08
IBPCT/IB2016/052023 2016-04-08

Publications (2)

Publication Number Publication Date
WO2017175201A2 WO2017175201A2 (en) 2017-10-12
WO2017175201A3 true WO2017175201A3 (en) 2018-01-11

Family

ID=59270055

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2017/052036 WO2017175201A2 (en) 2016-04-08 2017-04-07 Low etendue high brightness light emitting devices

Country Status (1)

Country Link
WO (1) WO2017175201A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112113691B (en) * 2019-06-21 2022-01-25 南京邮电大学 Gallium arsenide photonic crystal pressure sensor considering temperature influence
WO2024006262A2 (en) * 2022-06-30 2024-01-04 Lumileds Llc Light-emitting device with reduced-area central electrode
WO2024006263A1 (en) * 2022-06-30 2024-01-04 Lumileds Llc Light-emitting device with aligned central electrode and output aperture
WO2024006264A1 (en) * 2022-06-30 2024-01-04 Lumileds Llc Light-emitting device with central electrode and optical cavity

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040141333A1 (en) * 2001-04-26 2004-07-22 Centre National De La Recherche Scientifique Electroluminescent device with light extractor
US20060192217A1 (en) * 2005-02-28 2006-08-31 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US20060202226A1 (en) * 2005-02-28 2006-09-14 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
US20070091953A1 (en) * 2005-10-21 2007-04-26 P.B.C Lasers Ltd. Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes
US20080043795A1 (en) * 2006-08-21 2008-02-21 Industrial Technology Research Institute Light-Emitting Device
US20090128004A1 (en) * 2007-11-21 2009-05-21 Industrial Technology Research Institute Light-emitting device
US20110299044A1 (en) * 2009-06-22 2011-12-08 Industrial Technology Research Institute Projection apparatus
US20140049978A1 (en) * 2012-08-17 2014-02-20 David G. Stites LED-based photolithographic illuminator with high collection efficiency

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040141333A1 (en) * 2001-04-26 2004-07-22 Centre National De La Recherche Scientifique Electroluminescent device with light extractor
US20060192217A1 (en) * 2005-02-28 2006-08-31 The Regents Of The University Of California High efficiency light emitting diode (LED) with optimized photonic crystal extractor
US20060202226A1 (en) * 2005-02-28 2006-09-14 The Regents Of The University Of California Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate
US20070091953A1 (en) * 2005-10-21 2007-04-26 P.B.C Lasers Ltd. Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes
US20080043795A1 (en) * 2006-08-21 2008-02-21 Industrial Technology Research Institute Light-Emitting Device
US20090128004A1 (en) * 2007-11-21 2009-05-21 Industrial Technology Research Institute Light-emitting device
US20110299044A1 (en) * 2009-06-22 2011-12-08 Industrial Technology Research Institute Projection apparatus
US20140049978A1 (en) * 2012-08-17 2014-02-20 David G. Stites LED-based photolithographic illuminator with high collection efficiency

Also Published As

Publication number Publication date
WO2017175201A2 (en) 2017-10-12

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