CN112113691B - Gallium arsenide photonic crystal pressure sensor considering temperature influence - Google Patents
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- 239000004038 photonic crystal Substances 0.000 title claims abstract description 89
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 18
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- 238000001914 filtration Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 238000009530 blood pressure measurement Methods 0.000 description 7
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- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
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- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
- G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/04—Means for compensating for effects of changes of temperature, i.e. other than electric compensation
Abstract
The invention discloses a gallium arsenide photonic crystal pressure sensor considering temperature influence, which introduces junction point defects and line defects, and the structure comprises a photonic crystal waveguide and a photonic crystal resonant cavity. The sensor structure takes air as a background material and takes a gallium arsenide material as a dielectric column, and comprises three branch waveguides, an input waveguide and an output waveguide. The port detects the transmission condition of the electromagnetic wave through the monitor, and detects the applied pressure value according to the linear relation between the detected resonant wavelength change and the pressure. The invention has the excellent characteristics of high sensitivity and high quality factor, removal of the real pressure value measured by temperature response and the like, and the two-dimensional photonic crystal is compatible with the modern integrated preparation process and easy to manufacture. The high sensitivity and the high response speed enable the high-sensitivity high-response-rate optical fiber to have higher application value in the fields of engineering strain detection and the like.
Description
Technical Field
The invention belongs to the technical field of photonic crystal devices and temperature and pressure sensors, and particularly relates to a gallium arsenide photonic crystal pressure sensor considering temperature influence.
Background
To date, photonic crystals have been the focus of research. The photonic crystal is a novel artificial microstructure formed by arranging media with different refractive indexes according to a periodic rule. The photon forbidden band (photon band gap) characteristic can ensure that the light wave in a certain frequency band can not be transmitted in the light wave, namely, the electromagnetic wave in certain frequency band can selectively pass through the light wave. Photon localization is another important characteristic, and guiding and controlling photons are realized by introducing point defects or line defects, so that various optical devices with different functions, such as photonic crystal lasers, filters, optical switches, wavelength division multiplexing devices and the like, can be obtained.
With the increase of the integration level of photonic crystal devices, the further development of manufacturing processes and the continuous development of technologies, people can research various sensing devices to be applied to different occasions to realize different functions. However, the performance parameters such as sensitivity and the structural design requirements are higher and higher, and it is desirable to design a more excellent optical device, and the device is sensitive to the test environment.
Due to the unique characteristics of photonic crystals, the design of photonic crystal pressure sensors is more and more varied, and Shanthi et al designs a pressure sensor based on two-dimensional photonic crystals, the sensitivity of which can reach 2nm/GPa, and the dynamic range of which can reach 7 GPa. Olyaee et al designed a photonic crystal pressure sensor with high sensitivity using a photonic crystal nano-resonator and a waveguide structure, with a Si substrate, which was well compatible with the current integrated circuit production process, and with a sensitivity of 8 nm/GPa. The Gaga-substrate-based hole-type triangular lattice pressure sensor with high quality factor and sensitivity is designed by the ceramic band of Nanjing post and Electricity university, the sensitivity reaches 13.9nm/GPa, and the sensor has the advantages of better performance, better structure and easiness in manufacturing. However, the working environment of the device is not fixed, for example, when the ambient temperature changes greatly, the refractive index of the medium is changed by the thermal expansion effect and the thermo-optic effect, so that the resonant wavelength changes greatly, and the performance of the sensor is interfered. Therefore, the influence of temperature on pressure measurement is considered, a corresponding design is made, the temperature is analyzed to generate interference on the pressure sensor, and the temperature response needs to be eliminated through a mathematical fitting method.
Disclosure of Invention
The invention aims to provide a gallium arsenide photonic crystal pressure sensor considering temperature influence aiming at the problems in the prior art, and solves the problems of low sensitivity, low accuracy and temperature response of a device.
In order to achieve the purpose, the invention adopts the technical scheme that:
a gallium arsenide photonic crystal pressure sensor considering temperature influence introduces junction point defects and line defects, the pressure sensor comprises a square photonic crystal formed by arranging a dielectric column array, the square photonic crystal comprises a photonic crystal waveguide and a photonic crystal resonant cavity, the photonic crystal waveguide is a three-branch waveguide and comprises W1, W2 and W3 waveguides, and the photonic crystal resonant cavity comprises a cavity 2 and a cavity 3.
Preferably, the square photonic crystal is formed by arranging 31 x 21 simple cubic lattice dielectric column arrays in air.
Preferably, the dielectric columns of the array of simple cubic lattice dielectric columns are cylinders.
Preferably, the dielectric column radius r of the simple cubic lattice dielectric column array is 0.207a, and a is the lattice constant of the photonic crystal.
Preferably, the waveguide width of the photonic crystal waveguide is 2a, and the waveguide length is n × a, where n is an integer not less than 4, and a is the lattice constant of the photonic crystal.
Preferably, the input port and the two output ports of the photonic crystal waveguide are respectively located on three peripheral end faces of the square photonic crystal.
Preferably, the W1 and W2 waveguides in the photonic crystal waveguide form a right-angle shape, and the W3 waveguide is in a top hat shape.
Preferably, the photonic crystal resonant cavity is a symmetrical cavity, the cavity 2 is surrounded by a row of bilaterally symmetrical dielectric columns and a middle larger dielectric column, and the cavity 3 is formed by four dielectric columns on the left and right bevel edges of the top hat right bevel edge waveguide and lattice point positions with perfect structures.
Preferably, the radius r1 of the inner dielectric column of the cavity 2 in the photonic crystal resonant cavity is 2.2r, the radius r2 of the symmetric dielectric column is 0.606r, and the radius r of the dielectric column of the cavity 3 in the photonic crystal resonant cavity is r.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention effectively removes the temperature response of the device and is not limited by the temperature of the working environment.
2. The high-sensitivity pressure sensor provided by the invention has the advantages of high sensitivity, high quality factor and quick response, can be used in the fields of engineering strain detection and the like, particularly has higher application value for long-distance pipeline strain monitoring and the like, and has great effects on improving the accuracy, response speed and practicability of measuring force strain.
3. The invention utilizes the line defect selection to lead the electromagnetic wave of certain frequency band to pass through, utilizes the point defect to locally lead the electromagnetic wave of certain frequency band to be at the defect position, effectively improves the sensitivity of the sensor and realizes the rapid and accurate measurement of the applied force.
4. The invention has the advantages of high symmetry, compact structure, excellent performance, wider working frequency range and easy preparation.
5. The invention has the function of selecting the electromagnetic wave frequency range and can not be interfered by the electromagnetic waves in other frequency ranges.
Drawings
FIG. 1 is a schematic structural diagram of the present invention according to an embodiment;
FIG. 2 is a schematic diagram of a photonic crystal waveguide, a resonant cavity structure, and temperature sensing portions (shown outside and to the right of the box) and pressure sensing portions (shown in the box to the left) according to an embodiment;
FIG. 3 is a pattern field diagram of cavity 2 frequency coupling when temperature is dynamically varied within the range of-25 deg.C to 45 deg.C without applied pressure according to an embodiment;
FIG. 4 is a pattern field diagram of the cavity 3 frequency coupling when the temperature is dynamically varied within the range of-25 deg.C to 45 deg.C without applied pressure according to an embodiment;
FIG. 5 is a schematic diagram of a transmission spectrum of port No. 2 output after cavity 2 frequency coupling when temperature is dynamically changed within a range of-25 deg.C to 45 deg.C without applied pressure according to an embodiment;
FIG. 6 is a schematic diagram of a transmission spectrum of port No. 3 output after cavity 3 frequency coupling when temperature is dynamically changed within a range of-25 deg.C to 45 deg.C without applied pressure according to an embodiment;
FIG. 7 is a graphical illustration of the linear variation of the filtering wavelength of port No. 3 with temperature when the temperature is dynamically varied within the range of-25 deg.C to 45 deg.C without applied pressure, according to an embodiment;
FIG. 8 is a graph illustrating the variation of the filter wavelength of port 2 with temperature at three different temperatures, 5 deg.C, 25 deg.C and 45 deg.C, respectively, within a dynamic range of 0GPa-2GPa, according to an embodiment;
FIG. 9 is a graph illustrating a comparison of filter wavelength variation in a transmission spectrum when-25 ℃ is compared with a 25 ℃ simulation result according to an embodiment;
FIG. 10 is a graph illustrating a comparison of the variation of the filter wavelength in the transmission spectrum when comparing the simulation results at 25 ℃ and 45 ℃ according to an embodiment;
FIG. 11 is a schematic illustration of wavelength variation when pressure is applied such that the pressure value at half height peak for mode overlap at 0GPa is 0.0121GPa, in accordance with an embodiment;
FIG. 12 is a graph of the variation of the filter wavelength according to the embodiment in the range of-25 to 45 ℃ and 0 to 2 GPa: the curve of the filter wavelength changing with the pressure (black), the curve of the filter wavelength changing with the pressure containing the temperature response (red), and the curve schematic diagram of the truer filter wavelength changing (blue) obtained by eliminating the temperature response through mathematical fitting.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a gallium arsenide photonic crystal pressure sensor considering temperature influence, which introduces junction point defects and line defects, and comprises a square photonic crystal formed by arranging a dielectric column array, wherein the square photonic crystal comprises a photonic crystal waveguide and a photonic crystal resonant cavity, the photonic crystal waveguide is a three-branch waveguide comprising W1, W2 and W3 waveguides, and the photonic crystal resonant cavity comprises a cavity 2 and a cavity 3. The invention introduces a junction point defect and a line defect, and the structure comprises a photonic crystal waveguide and a photonic crystal resonant cavity. The sensor structure takes air as a background material and a gallium arsenide material as a dielectric column, and comprises three branch waveguides, one input waveguide and two output waveguides. The port detects the transmission condition of the electromagnetic wave through the monitor, and detects the applied pressure value according to the linear relation between the detected resonant wavelength change and the pressure.
Specifically, the square photonic crystal is formed by arranging 31 x 21 simple cubic lattice dielectric column arrays in air. The dielectric columns of the simple cubic lattice dielectric column array are cylinders. The radius r of the dielectric column of the simple cubic lattice dielectric column array is 0.207a, and a is the lattice constant of the photonic crystal.
Specifically, the waveguide width of the photonic crystal waveguide is 2a, and the waveguide length is n × a, wherein n is an integer not less than 4, and a is the lattice constant of the photonic crystal. The input port and the two output ports of the photonic crystal waveguide are respectively positioned on three peripheral end faces of the square photonic crystal. The W1 and W2 waveguides in the photonic crystal waveguide form a right-angle shape, and the W3 waveguide is in a top hat shape.
Specifically, the photonic crystal resonant cavity is a symmetrical cavity, the cavity 2 is surrounded by a row of symmetrical dielectric columns at two sides and a larger dielectric column in the middle, and the cavity 3 is formed by four dielectric columns on the left and right oblique sides of the top hat right oblique side waveguide and lattice point positions with perfect structures. The radius r1 of the inner dielectric column of the cavity 2 in the photonic crystal resonant cavity is 2.2r, the radius r2 of the symmetric dielectric column is 0.606r, and the radius r of the dielectric column of the cavity 3.
As shown in FIG. 1, a gallium arsenide photonic crystal pressure sensor considering temperature influence comprises a photonic crystal waveguide and a photonic crystal resonant cavity.
The photonic crystal is formed by arranging a 31 x 21 simple cubic lattice dielectric column array in a medium with the refractive index of 1, wherein the photonic crystal is directly arranged in the air, the photonic crystal is square, the dielectric columns of the simple cubic lattice dielectric column array are cylinders, the material is gallium arsenide, and the refractive index is 3.43.
Under the action of pressure, the linear relation between the wavelength of the filter mode of the filter and the pressure measures the change of the pressure according to the pressure elastic characteristic of the material. According to the thermo-optic effect, under the condition of temperature change, the linear relation between the wavelength of the filtering mode of the filter and the temperature can be used for measuring the temperature change. The refractive index versus pressure is expressed as follows:
wherein the content of the first and second substances,
in the formula p11、p12、p44，E,G,v,nij,σijRespectively representing the photoelastic coefficient, Young modulus, shear modulus, Poisson's ratio, refractive index in the ij direction and pressure applied in the ij direction.
Suppose we are longitudinalWhen pressure is applied and the pressure in each direction in the plane is the same, σxx＝σyy＝σzz＝σ，σxz＝σyz＝σxyIf 0, the relationship can be reduced to n0-(C1+2C2) N in the formula0Is the refractive index of the material at zero pressure, and σ is the applied pressure. Photoelastic coefficient C of GaAs material1(10-12/Pa) is-18.39, C2(10-12the/Pa) is-10.63, the photoelastic characteristic is obvious, and the material is suitable for preparing a pressure detection device, so that gallium arsenide material is selected as a photonic crystal substrate material, the refractive index of the material is 3.43, and the p is11＝-0.165,p12＝-0.140。
The gallium arsenide material also has a certain thermo-optic effect, and under the condition of temperature change, the refractive index can be changed due to the thermo-optic effect and the thermal expansion effect of the medium material, so that the wavelength of the filtering mode generates corresponding linear change. Refractive index calculation formula n ═ n0[1+εT(T-T0)]In the formula n0Is the refractive index of the material at room temperature (25 ℃), n is the refractive index of the material after temperature change, T0Linear thermo-optic coefficient epsilon of gallium arsenide at room temperatureT＝149x10-6um/℃。
Three-branch waveguides, namely a photonic crystal waveguide, a photonic crystal waveguide input waveguide w1, and output waveguides w2 and w3 (namely, an input port and two output ports in fig. 2) are designed in the simple cubic lattice dielectric column array by removing dielectric columns, and are respectively located on three-edge peripheral end faces of the photonic crystal, the lengths of the output waveguides are n a, n is an integer not less than 4, the width of the waveguide is 2a, a 90-degree corner is formed between the waveguide w1 and the output waveguide w2, and a cavity structure formed by 7 symmetrically distributed but non-uniformly sized dielectric columns is designed, and the radiuses of the cavity structure are respectively as shown in the figure: the center radius is 2.2r, two sides of the center column are respectively provided with one medium column with the radius of r, the outermost side is provided with two medium columns with the radius of 0.606r, and the material is still gallium arsenide. Waveguide w3 is in a top hat shape, the left side is coupled with input waveguide w1 through the top hat edge, and the four dielectric columns on the left and right hypotenuse of the right top hat right hypotenuse waveguide and the lattice point position with the perfect structure form cavity 3.
As shown in fig. 3 and 4, according to the filter structure, the cavity 2 and the cavity 3 are respectively coupled with the waveguides W2 and W3 to realize a narrow-band bandpass filtering function, and the cavity 2 and the cavity 3 are respectively coupled with light of different frequencies and output from the waveguides W2 and W3 to form mode field patterns of different frequencies as shown in the figure.
Based on the implementation of the above functions, when the temperature changes within the dynamic range of-25 to 45 ℃ (the temperature change step is 10 ℃), the filtering wavelengths of the port 2 and the port 3 generate red shifts, and the transmission spectra of the port 2 and the port 3 are respectively monitored, as shown in fig. 5 and fig. 6. And calculating the temperature sensitivity coefficients of the two ports according to the corresponding data: number 2 port temperature sensitivity coefficient is k20.2/10-0.02 nm/deg.C, and the temperature sensitivity coefficient of port No. 3 is k30.07/10-0.007 nm/° c. And a linear variation curve of the No. 3 port filtering wavelength along with the temperature is obtained, as shown in FIG. 7.
The temperature detection in the dual-channel filter is simultaneously used as a temperature reference for pressure measurement, the influence of temperature response on the pressure measurement is researched, and the influence of the temperature is eliminated by using mathematical fitting. From the temperature sensitivity coefficient obtained above and the calculated Delta lambda2And Δ λT3Variation of filtering wavelength at pressure endpresssureIt can be calculated by the following formula,
in fig. 8, the variation curve of the filter wavelength of port 2 with temperature at three different measurement temperatures in the dynamic range of 0GPa to 2GPa is shown, which is the variation curve of the filter wavelength with temperature at 5 ℃, 25 ℃ and 45 ℃ respectively: the temperature is increased at constant pressure, and the red shift of the filtering wavelength is increased; the applied pressure is increased at constant temperature, and the red shift of the filtering wavelength is also increased. It can also be concluded that the temperature response has an effect on the pressure measurement, and whether the effect is so large that it is not negligible we next verify further. Calculating according to the series of simulation data
Calculating pressure sensitivity from simulation data using formula for pressure sensitivity and quality factorThe degree of the magnetic field is measured,
and a quality factor of about 5696.
The actual ambient temperature to which the device is exposed may not be stable, while the effect of temperature on the pressure measurement is also shown in fig. 8, and the analysis according to fig. 5 yields the filter wavelength change when the extreme temperature is compared to room temperature: FIG. 9 shows that the filter wavelength variation is 1.028nm when comparing-25 ℃ with 25 ℃; in FIG. 10, the filter wavelength change is 0.397nm when comparing 25 ℃ with 45 ℃ and the filter wavelength change is 1.425nm from 25 ℃ to 45 ℃. Analysis of minimum pressure values (minimum resolution pressure): simulations show that the pressure applied to overlap the mode at 0GPa at peak half height is 0.0121GPa, the wavelength variation is 0.19nm, see fig. 11, and the minimum resolution filter wavelength is 0.2nm, depending on the pressure sensitivity and minimum resolution pressure.
Comparing fig. 9, fig. 10 and fig. 11 can more intuitively and clearly obtain the sharp difference between the variation of the filtering wavelength and the minimum resolution filtering wavelength under the extreme temperature condition: comparing fig. 11 with fig. 9 and fig. 10 respectively, it can be seen that the difference of the filter wavelength variation is very large, and the filter wavelength variation between the two extreme temperatures is much larger, so that it can be known that the temperature response disturbs the pressure measurement non-negligible.
The temperature response is removed by mathematical fitting, i.e. according to the formula
And calculating the filtering wavelength variation of the port No. 2. FIG. 12 shows the filter wavelength variation curves for temperature in the range of-25 to 45 ℃ and pressure in the range of 0 to 2 GPa. The black square curve is a curve of the filter wavelength changing along with the pressure, the red round block curve is a curve of the filter wavelength containing the temperature response changing along with the pressure, the temperature response is eliminated through mathematical fitting to obtain a blue triangular curve in the graph, and accordingly the measured pressure value is more real.
The sensor pressure sensitivity is visualized in tabular form by setting the temperature-pressure points, as in table 1: the table 1 shows the filter wavelength variation relationship under the selected temperature-pressure point in the range of-25 to 45 ℃ and 0 to 2GPa, including the filter wavelength variation relationship with pressure, the filter wavelength variation relationship with temperature response with pressure, and the filter wavelength variation relationship obtained by eliminating the temperature response through mathematical fitting.
TABLE 1
The invention designs a gallium arsenide photonic crystal pressure sensor considering the temperature influence. The sensor eliminates the temperature response during pressure measurement, improves the sensitivity and has high response speed. The port detects the transmission condition of the electromagnetic wave through the monitor, and detects the applied pressure value according to the linear relation between the detected resonant wavelength change and the pressure. The invention has the excellent characteristics of high sensitivity and high quality factor, removal of the real pressure value measured by temperature response and the like, and the two-dimensional photonic crystal is compatible with the modern integrated preparation process and easy to manufacture. In a dynamic range of-25 to 45 ℃ and 0 to 2GPa, the sensitivity of the pressure sensor before the temperature response is not eliminated is about 16.6nm/GPa, the sensitivity of the pressure sensor after the temperature response is eliminated is about 15.9nm/GPa, and the quality factor is about 5696. The high sensitivity and the response speed enable the sensor to have higher application value in the fields of engineering strain detection and the like.
The foregoing illustrates the principles, structural design, analytical research methodology, device characteristics, and device advantages of the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the principles and scope of the invention as defined in the appended claims.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (7)
1. The gallium arsenide photonic crystal pressure sensor considering temperature influence is characterized in that a junction point defect and a line defect are introduced, the pressure sensor comprises a square photonic crystal formed by arranging a dielectric column array, the square photonic crystal comprises a photonic crystal waveguide and a photonic crystal resonant cavity, the photonic crystal waveguide is a three-branch waveguide comprising a W1 waveguide, a W2 waveguide and a W3 waveguide, and the photonic crystal resonant cavity comprises a cavity 2 and a cavity 3; the W1 waveguide and the W2 waveguide in the photonic crystal waveguide form a right angle shape, the W3 waveguide is presented in a top-hat shape structure, and the left side of the photonic crystal waveguide is coupled with the W1 waveguide through a top-hat edge; the photonic crystal resonant cavity is a symmetrical cavity, the cavity 2 is surrounded by a row of symmetrical medium columns at two sides and a larger medium column in the middle, and the cavity 3 is formed by four medium columns on the left and right bevel edges of the top hat right bevel edge waveguide and lattice point positions with complete structures; the gallium arsenide material is used as a dielectric column, the W1 waveguide is used as an input waveguide, the W2 waveguide and the W3 waveguide are used as output waveguides, the transmission condition of electromagnetic waves is detected through a monitor, and the applied pressure value is detected according to the linear relation between the detected resonant wavelength change and the pressure.
2. The gallium arsenide photonic crystal pressure sensor considering temperature influence of claim 1, wherein said square photonic crystal is composed of an array of 31 x 21 simple cubic lattice dielectric pillars arranged in air.
3. The gallium arsenide photonic crystal pressure sensor considering temperature effects of claim 2 wherein the dielectric pillars of the array of simple cubic lattice dielectric pillars are cylindrical.
4. The gallium arsenide photonic crystal pressure sensor considering temperature influence as claimed in claim 2 wherein the radius r of the dielectric pillars of the simple cubic lattice dielectric pillar array is 0.207a, a is the lattice constant of the photonic crystal.
5. The gallium arsenide photonic crystal pressure sensor considering temperature influence of claim 1, wherein the photonic crystal waveguide has a waveguide width of 2a and a length of n a, wherein n is an integer not less than 4 and a is a lattice constant of the photonic crystal.
6. The gallium arsenide photonic crystal pressure sensor considering temperature influence of claim 1, wherein the input port and two output ports of the photonic crystal waveguide are located on three peripheral end faces of the square photonic crystal respectively.
7. The gallium arsenide photonic crystal pressure sensor considering temperature influence as claimed in claim 1 wherein the photonic crystal resonator has an inner dielectric column radius r1 of cavity 2 of 2.2r, a symmetric dielectric column radius r2 of 0.606r, and a dielectric column radius of cavity 3 of r.
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