WO2017173699A1 - 有机电致发光器件及显示装置 - Google Patents

有机电致发光器件及显示装置 Download PDF

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WO2017173699A1
WO2017173699A1 PCT/CN2016/081461 CN2016081461W WO2017173699A1 WO 2017173699 A1 WO2017173699 A1 WO 2017173699A1 CN 2016081461 W CN2016081461 W CN 2016081461W WO 2017173699 A1 WO2017173699 A1 WO 2017173699A1
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layer
electrode
semiconductor material
carrier
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周凯锋
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission

Definitions

  • the present invention relates to the field of display, and in particular to an organic electroluminescent device and a display device.
  • Organic electroluminescent devices such as Organic Light Emitting Diodes (OLEDs)
  • OLEDs Organic Light Emitting Diodes
  • a white organic light emitting diode (WOLED) can be used as a light source in the field of illumination, and a full color display can be applied to the display field through the WOLED plus color filter, which is of great significance.
  • WOLED is mainly formed by binary complementary color or three primary colors.
  • the binary complementary color WOLED mainly introduces a blue light emitting material layer and a yellow light emitting material layer stack structure, and the structure and the process are relatively simple.
  • the WOLED device has low current efficiency and high driving voltage, resulting in low power consumption efficiency and high power consumption.
  • the present invention provides an organic electroluminescent device comprising: a substrate and a first electrode disposed in parallel on the same side of the substrate, a first type of carrier transport and injection layer, a light-emitting layer, a heterojunction, a second light-emitting layer, a second type carrier transport and injection layer, and a second electrode, wherein the first electrode is used to load a first polarity voltage and provide a first type of carrier, The first type of carrier transport and injection layer is for transmitting the first type of carriers to the first light emitting layer, and the second electrode is for loading a second polarity voltage and providing a second type a carrier, the second polarity voltage and the first polarity voltage form a first electric field, and the second type carrier transport and injection layer is used for Transmitting the second type of carriers to the second luminescent layer, a second electric field is formed in the heterojunction, and a direction of the second electric field is opposite to a direction of the first electric field, the heterogeneity a junction for generating
  • the first electrode is an anode
  • the second electrode is a cathode
  • the first type carrier transport and injection layer is a hole transport and injection layer
  • the second type carrier transport and injection layer For electron transport and injection layers, the first type of carriers are holes and the second type of carriers are electrons.
  • first type of carrier transport and implant layer comprises a P-type doped semiconductor material
  • second type of carrier transport and implant layer comprises an N-type doped semiconductor material
  • the heterojunction comprises a layered N-type semiconductor material layer and a P-type semiconductor material layer, one side of the N-type semiconductor material layer being disposed on the first luminescent layer away from the first type of carrier transport And a side of the injection layer, wherein a side of the P-type semiconductor material layer away from the N-type semiconductor material layer is disposed on a side of the second light-emitting layer away from the second type carrier transport and injection layer.
  • the first light emitting layer is a blue light emitting layer, the first light is blue light, the second light emitting layer is a yellow light emitting layer, and the second light is yellow light.
  • the first electrode is a cathode
  • the second electrode is an anode
  • the first type carrier transport and injection layer is an electron transport and injection layer
  • the second type carrier transport and injection layer is a hole And transmitting and injecting layers
  • the first type of carriers are electrons
  • the second type of carriers are holes.
  • first type of carrier transport and implant layer comprises an N-type doped semiconductor material
  • second type of carrier transport and implant layer comprises a P-type doped semiconductor material
  • the heterojunction comprises a stacked N-type semiconductor material layer and a P-type semiconductor material layer, one side of the P-type semiconductor material layer is disposed on the first luminescent layer away from the first type carrier transport And a side of the injection layer, wherein one side of the N-type semiconductor material layer away from the P-type semiconductor material layer is disposed on the second light-emitting layer away from the second type carrier transport and injection layer surface.
  • the first electrode is a transparent electrode
  • the second electrode is a metal electrode
  • the present invention also provides a display device comprising the organic electroluminescent device according to any of the above embodiments.
  • the first type carrier transport and injection layer, the heterojunction and the second type carrier transport and injection layer of the organic electroluminescent device of the present invention constitute a PIN
  • the PIN structure can avoid exciton annihilation at the interface, balance the carrier concentration in the organic electroluminescent device, thereby improving the current efficiency of the organic electroluminescent device, and finally improving the organic electroluminescent device. Power efficiency.
  • such a structure of the organic electroluminescent device can effectively reduce the driving voltage of the organic electroluminescent device, thereby reducing the power consumption of the organic electroluminescent device.
  • FIG. 1 is a schematic cross-sectional view showing an organic electroluminescent device according to a preferred embodiment of the present invention.
  • FIG. 2 is a schematic view showing the direction of an electric field in an electric field and an organic electroluminescent device in a heterojunction in the present invention.
  • FIG. 3 is a schematic cross-sectional view showing an organic electroluminescent device according to another preferred embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a display device according to a preferred embodiment of the present invention.
  • FIG. 1 is a schematic cross-sectional view of an organic electroluminescent device according to a preferred embodiment of the present invention
  • FIG. 2 is an electric field and an organic electroluminescent device in a heterojunction according to the present invention; Schematic diagram of the direction of the electric field.
  • the organic electroluminescent device 10 can be, but is not limited to, an organic light emitting diode.
  • the organic electroluminescent device 10 includes a substrate 110 and a first electrode 120 which is sequentially stacked and disposed on the same side of the substrate 110, a first type carrier transport and injection layer 130, a first light emitting layer 140, and a heterogeneity The junction 150, the second luminescent layer 160, the second type carrier transport and implant layer 170, and the second electrode 180.
  • one side of the first electrode 120 away from the first type carrier transport and injection layer 130 is disposed on the substrate 110.
  • the first electrode 120 loads a first polarity voltage and provides a first type of carrier.
  • the first type of carrier transport and injection layer 130 is configured to transport the first type of carriers to the first luminescent layer 140.
  • the second electrode 180 is configured to load a second polarity voltage and provide a second type of carrier, the second polarity voltage and the first polarity voltage forming a first electric field.
  • the second type of carrier transport and injection layer 170 is configured to transport the second type of carriers to the second luminescent layer 160.
  • a second electric field is formed in the heterojunction 150, the direction of the second electric field is opposite to the direction of the first electric field, and the heterojunction 150 is used to generate excitons at the first
  • the electric field is separated into a first type of carrier and a second type of carrier.
  • the first type of carriers generated by the first electrode 120 and the second type of carriers generated by the heterojunction 150 are combined in the first luminescent layer 140 to generate a first ray.
  • the second type of carriers generated by the second electrode 180 and the first type of carriers generated by the heterojunction 150 are combined in the second luminescent layer 160 to generate a second ray, the first ray
  • the light is mixed with the second light to form white light and is emitted from the direction in which the substrate 110 is away from the first electrode 120. It can be understood that the second electric field is smaller than the first electric field.
  • the substrate 110 is a transparent substrate, and the substrate 110 includes, but is not limited to, a glass substrate or a plastic substrate.
  • the first electrode 120 is an anode
  • the second electrode 180 is a cathode
  • the first type carrier transport and injection layer 130 is a hole injection and transport layer
  • the second type The carrier transport and implant layer 170 is an electron transport and injection layer, the first type of carriers being holes and the second type of carriers being holes.
  • the first electrode 120 is a transparent electrode
  • the second electrode 180 is a metal electrode. Therefore, the first light and the second light are mixed into white light and are away from the substrate 110. The direction of the first electrode 120 is emitted.
  • the first type carrier transport and implant layer 130 comprises a P-type doped semiconductor material
  • the second type of carrier transport and implant layer 170 includes an N-type doped semiconductor material.
  • the first light emitting layer 140 is a blue light emitting layer, and correspondingly, the first light is blue light, the second light emitting layer 160 is a yellow light emitting layer, and the second light is yellow light. And the blue light is mixed with the white light to form white light.
  • the excitons generated by the heterojunction 150 are separated into the first type of carriers and the second type of carriers after the first electric field, and at the first electric field.
  • the first type of carriers and the second type of carriers in the heterojunction 150 move in opposite directions.
  • the first type of carriers in the heterojunction 150 are transmitted to the second luminescent layer 160, and the second type of the heterojunction 150 The carriers are transferred to the first light emitting layer 140.
  • the heterojunction 150 includes an N-type semiconductor material layer 151 and a P-type semiconductor material layer 152 which are stacked.
  • One side of the N-type semiconductor material layer 151 is disposed on a side of the first light-emitting layer 140 away from the first-type carrier transport and injection layer 130, and the P-type semiconductor material layer 152 is away from the N-type semiconductor
  • One side of the material layer 151 is disposed on a side of the second light emitting layer 160 away from the second type carrier transport and injection layer 170.
  • the N-type semiconductor material layer 151 is composed of a host material and an N-type dopant.
  • the host material is a higher electron mobility material
  • the N-type dopant has a shallower LUMO energy level
  • the N-type dopant is capable of forming charge transfer with the host material.
  • the P-type semiconductor material layer 152 is composed of a host material and a P-type dopant.
  • the host material is a material having a higher hole mobility, the P-type dopant having a deeper HOMO level, and the P-type dopant is capable of forming a charge transfer with the host material.
  • the first type carrier transport and injection layer 130, the first light emitting layer 140, and the N-type semiconductor material layer 151 in the heterojunction 150 constitute one light emitting unit.
  • the first load The light-emitting unit constituted by the type carrier transport and injection layer 130, the first light-emitting layer 140, and the N-type semiconductor material layer 151 in the heterojunction 150 is referred to as a first light-emitting unit.
  • the second type carrier transport and injection layer 170, the second light emitting layer 160, and the P-type semiconductor material layer 152 in the heterojunction 150 constitute one light emitting unit, and the second type is convenient for description.
  • the light-emitting unit constituted by the carrier transport and injection layer 170, the second light-emitting layer 160, and the P-type semiconductor material layer 152 in the heterojunction 150 is referred to as a second light-emitting unit.
  • the first type carrier transport and injection layer 130, the heterojunction 150, and the second type carrier transport and injection layer 170 of the organic electroluminescent device 10 constitute A PIN structure capable of avoiding exciton annihilation at the interface, balancing the carrier concentration in the organic electroluminescent device 10, thereby improving the current efficiency of the organic electroluminescent device 10, and finally improving the organic electricity.
  • such a structure of the organic electroluminescent device 10 can effectively reduce the driving voltage of the organic electroluminescent device 10, thereby reducing the power consumption of the organic electroluminescent device 10.
  • the first type carrier transport and injection layer 130, the first light emitting layer 140, and the N in the heterojunction 150 in the organic electroluminescent device 10 in the first light emitting unit of the present invention The semiconductor material layer 151 constitutes a PIN structure; and, the P-type semiconductor material layer 152, the second light-emitting layer 160, and the second type carrier transport in the heterojunction 150 in the second light-emitting unit And the injection layer 170 constitutes a PIN structure.
  • Each of the light-emitting units in the organic electroluminescent device 10 of the present invention has a PIN structure, and the carrier concentration in each of the light-emitting units is further balanced, and the current efficiency in the organic electroluminescent device 10 is further improved.
  • the power efficiency of the organic electroluminescent device 10 is further improved, the driving voltage of the organic electroluminescent device 10 is further reduced, and the power consumption of the organic electroluminescent device 10 is further improved. reduce.
  • FIG. 3 is a cross-sectional structural diagram of an organic electroluminescent device according to another preferred embodiment of the present invention.
  • the first electrode 120 is a cathode
  • the second electrode 180 is an anode
  • the first type carrier transport and injection layer 130 is an electron transport and injection layer
  • the second type is
  • the stream transport and implant layer 170 is a hole transport and implant layer, the first type of carriers being electrons and the second type of carriers being holes.
  • the first type of carrier transport and implant layer 130 includes an N-type doped semiconductor material
  • the second type of carrier transport and implant layer 170 includes a P-type doped semiconductor material.
  • the heterojunction 150 includes an N-type semiconductor material layer 151 and a P-type semiconductor material layer 152 which are stacked.
  • One side of the P-type semiconductor material layer 152 is disposed on a side of the first light-emitting layer 140 away from the first-type carrier transport and injection layer 130, and the N-type semiconductor material layer 151 is away from the P-type semiconductor
  • One side of the material layer 152 is disposed on a side of the second light emitting layer 160 away from the second type carrier transport and injection layer 170.
  • FIG. 4 is a schematic structural diagram of a display device according to a preferred embodiment of the present invention.
  • the display device 1 may include, but is not limited to, a portable device such as a smart phone, a mobile device (MID), an e-book, a portable station (PSP), or a personal digital assistant (PDA).
  • the electronic device can also be a display or the like.
  • the display device 1 includes an organic electroluminescent device 10, which is as described above and will not be described herein.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机电致发光器件（10）及显示装置。有机电致发光器件包括基板（110）及依次层叠且设置在基板同侧的第一电极（120）、第一类型载流子传输及注入层（130）、第一发光层（140）、异质结（150）、第二发光层（160）、第二类型载流子传输及注入层（170）及第二电极（180），第一电极提供第一类型载流子并经由第一类型载流子传输及注入层传输至第一发光层，第二电极提供第二类型载流子并经由第二类型载流子传输及注入层传输至第二发光层，异质结产生激子并分离成第一、第二类型载流子，第一电极的第一类型载流子与异质结中的第二类型载流子在第一发光层中复合产生第一光线，第二电极的第二类型载流子与异质结中的第一类型载流子在第二发光层中复合产生第二光线，第一光线与第二光线混光成白光。

Description

有机电致发光器件及显示装置
本发明要求2016年4月5日递交的发明名称为“有机电致发光器件及显示装置”的申请号201610207450.7的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及显示领域，尤其涉及一种有机电致发光器件及显示装置。
背景技术
有机电致发光器件，比如有机发光二极管(Organic Light Emitting Diode，OLED)以其自身优势如自发光，响应速度快，广视角，轻薄，低功耗等受到业界的广泛关注。实现白光有机发光二极管(White Organic Light Emitting Diode，WOLED)可作为光源应用于照明领域，通过WOLED加彩色滤光片可实现全彩显示应用于显示领域，具有重要意义。目前WOLED主要通过二元互补色或者三原色混色而成。二元互补色WOLED主要引入蓝光发光材料层和黄光发光材料层堆叠结构，结构和工艺相对简单。但形成的白光的色纯度和显色性较低且由于各个界面处的载流子不能够有效分离，从而导致在蓝光发光材料层和黄光发光材料层内载流子注入和复合不平衡，造成WOLED器件电流效率较低，且驱动电压较高，从而导致功耗效率较低，功耗较高。
发明内容
本发明提供一种有机电致发光器件，所述有机电致发光器件包括：基板及依次层叠设置且设置在所述基板同侧的第一电极、第一类型载流子传输及注入层、第一发光层、异质结、第二发光层、第二类型载流子传输及注入层及第二电极，所述第一电极用于加载第一极性电压并提供第一类型载流子，所述第一类型载流子传输及注入层用于将所述第一类型载流子传输至所述第一发光层，所述第二电极用于加载第二极性电压并提供第二类型载流子，所述第二极性电压和所述第一极性电压形成第一电场，所述第二类型载流子传输及注入层用于 将所述第二类型载流子传输至所述第二发光层，所述异质结内形成第二电场，所述第二电场的方向和所述第一电场的方向相反，所述异质结用于产生激子，所述激子在所述第一电场的作用下分离成第一类型载流子和第二类型载流子，所述第一电极产生的第一类型载流子与所述异质结产生的第二类型载流子在所述第一发光层中复合以产生第一光线，所述第二电极产生的第二类型载流子与所述异质结产生的第一类型载流子在所述第二发光层中复合以产生第二光线，所述第一光线与所述第二光线混光成白光并从所述基板远离所述第一电极的方向出射。
其中，所述第一电极为阳极，所述第二电极为阴极，所述第一类型载流子传输及注入层为空穴传输及注入层，所述第二类型载流子传输及注入层为电子传输及注入层，所述第一类型载流子为空穴，所述第二类型载流子为电子。
其中，所述第一类型载流子传输及注入层包括P型掺杂半导体材料，所述第二类型载流子传输及注入层包括N型掺杂半导体材料。
其中，所述异质结包括层叠设置的N型半导体材料层及P型半导体材料层，所述N型半导体材料层的一面设置在所述第一发光层远离所述第一类型载流子传输及注入层的一面，所述P型半导体材料层远离所述N型半导体材料层的一面设置在所述第二发光层远离所述第二类型载流子传输及注入层的一面。
其中，所述第一发光层为蓝光发光层，所述第一光线为蓝光，所述第二发光层为黄光发光层，所述第二光线为黄光。
其中，第一电极为阴极，所述第二电极为阳极，所述第一类型载流子传输及注入层为电子传输及注入层，所述第二类型载流子传输及注入层为空穴传输及注入层，所述第一类型载流子为电子，所述第二类型载流子为空穴。
其中，所述第一类型载流子传输及注入层包括N型掺杂半导体材料，所述第二类型载流子传输及注入层包括P型掺杂半导体材料。
其中，所述异质结包括层叠设置的N型半导体材料层及P型半导体材料层，所述P型半导体材料层的一面设置在所述第一发光层远离所述第一类型载流子传输及注入层的一面，所述N型半导体材料层远离所述P型半导体材料层的一面设置在所述第二发光层远离所述第二类型载流子传输及注入层的一 面。
其中，所述第一电极为透明电极，所述第二电极为金属电极。
本发明还提供了一种显示装置，所述显示装置包括前述任意一实施方式所述的有机电致发光器件。
相较于现有技术，本发明的有机电致发光器件的所述第一类型载流子传输及注入层、所述异质结及所述第二类型载流子传输及注入层构成一个P-I-N结构，所述P-I-N结构能够避免界面处的激子猝灭，平衡有机电致发光器件中的载流子浓度，进而提高了有机电致发光器件的电流效率，最终提高了有机电致发光器件的功率效率。且所述有机电致发光器件的这种结构能够有效降低所述有机电致发光器件的驱动电压，进而降低了所述有机电致发光器件的功耗。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一较佳实施方式的有机电致发光器件的剖面结构示意图。
图2为本发明中异质结中电场和有机电致发光器件中的电场的方向示意图。
图3为本发明另一较佳实施方式的有机电致发光器件的剖面结构示意图。
图4为本发明一较佳实施方式的显示装置的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请一并参阅图1和图2，图1为本发明一较佳实施方式的有机电致发光器件的剖面结构示意图；图2为本发明中异质结中电场和有机电致发光器件中的 电场的方向示意图。所述有机电致发光器件10可以为但不仅限于为有机发光二极管。所述有机电致发光器件10包括基板110及依次层叠设置且设置在所述基板110同侧的第一电极120、第一类型载流子传输及注入层130、第一发光层140、异质结150、第二发光层160、第二类型载流子传输及注入层170及第二电极180。在本实施方式中，第一电极120远离所述第一类型载流子传输及注入层130的一面设置在所述基板110上。所述第一电极120加载第一极性电压并提供第一类型载流子。所述第一类型载流子传输及注入层130用于将所述第一类型载流子传输至所述第一发光层140。所述第二电极180用于加载第二极性电压并提供第二类型载流子，所述第二极性电压和所述第一极性电压形成第一电场。所述第二类型载流子传输及注入层170用于将所述第二类型载流子传输至所述第二发光层160。所述异质结150内形成第二电场，所述第二电场的方向和所述第一电场的方向相反，所述异质结150用于产生激子，所述激子在所述第一电场的作用下分离成第一类型载流子和第二类型载流子。所述第一电极120产生的第一类型载流子和所述异质结150产生的第二类型载流子在所述第一发光层140中复合以产生第一光线。所述第二电极180产生的第二类型载流子与所述异质结150产生的第一类型载流子在所述第二发光层160中复合以产生第二光线，所述第一光线与所述第二光线混光成白光并从所述基板110远离所述第一电极120的方向出射。可以理解地，所述第二电场小于所述第一电场。
所述基板110为透明的基板，所述基板110包括但不仅限于为玻璃基板或者为塑料基板。
在一实施方式中，所述第一电极120为阳极，所述第二电极180为阴极，所述第一类型载流子传输及注入层130为空穴注入及传输层，所述第二类型载流子传输及注入层170为电子传输及注入层，所述第一类型载流子为空穴，所述第二类型载流子为空穴。
在本实施方式中，所述第一电极120为透明电极，所述第二电极180为金属电极，因此，所述第一光线与所述第二光线混光成白光并从所述基板110远离所述第一电极120的方向出射。
优选地，所述第一类型载流子传输及注入层130包括P型掺杂半导体材料， 所述第二类型载流子传输及注入层170包括N型掺杂半导体材料。
在本实施方式中，所述第一发光层140为蓝光发光层，相应地，所述第一光线为蓝光，所述第二发光层160为黄光发光层，所述第二光线为黄光，所述蓝光与所述白光混光成白光。
具体地，所述异质结150产生的所述激子在所述第一电场的作用下分离成所述第一类型载流子和第二类型载流子之后，并在所述第一电场的作用下，所述异质结150中的第一类型载流子和第二类型载流子朝相反的方向运动。具体地，在所述第一电场的作用下，所述异质结150中的第一类型载流子被传输至所述第二发光层160，所述异质结150中的第二类型载流子被传输至所述第一发光层140。
在本实施方式中，所述异质结150包括层叠设置的N型半导体材料层151及P型半导体材料层152。所述N型半导体材料层151的一面设置在所述第一发光层140远离所述第一类型载流子传输及注入层130的一面，所述P型半导体材料层152远离所述N型半导体材料层151的一面设置在所述第二发光层160远离所述第二类型载流子传输及注入层170的一面。
在本实施方式中，所述N型半导体材料层151由主体材料和N型掺杂剂构成。所述主体材料为电子迁移率较高材料，所述N型掺杂剂具有较浅的LUMO能级，且所述N型掺杂剂能够与所述主体材料形成电荷转移。所述P型半导体材料层152由主体材料和P型掺杂剂构成。所述主体材料为空穴迁移率较高的材料，所述P型掺杂剂具有较深的HOMO能级，所述P型掺杂剂能够与所述主体材料形成电荷转移。
所述第一类型载流子传输及注入层130、所述第一发光层140及所述异质结150中的N型半导体材料层151构成一个发光单元，为了方便描述，所述第一载类型载流子传输及注入层130、所述第一发光层140及所述异质结150中的N型半导体材料层151构成的发光单元称为第一发光单元。所述第二类型载流子传输及注入层170、所述第二发光层160及所述异质结150中的P型半导体材料层152构成一个发光单元，为了方便描述，所述第二类型载流子传输及注入层170、所述第二发光层160及所述异质结150中的P型半导体材料层152构成的发光单元称为第二发光单元。
在本实施方式中，所述有机电致发光器件10的所述第一类型载流子传输及注入层130、所述异质结150及所述第二类型载流子传输及注入层170构成一个P-I-N结构，所述P-I-N结构能够避免界面处的激子猝灭，平衡有机电致发光器件10中的载流子浓度，进而提高了有机电致发光器件10的电流效率，最终提高了有机电致发光器件10的功率效率。且所述有机电致发光器件10的这种结构能够有效降低所述有机电致发光器件10的驱动电压，进而降低了所述有机电致发光器件10的功耗。
进一步地，本发明第一发光单元中的有机电致发光器件10中的所述第一类型载流子传输及注入层130、所述第一发光层140及所述异质结150中的N型半导体材料层151构成一个P-I-N结构；以及，第二发光单元中的所述异质结150中的P型半导体材料层152、所述第二发光层160及所述第二类型载流子传输及注入层170构成一个P-I-N结构。本发明有机电致发光器件10中的各发光单元均为P-I-N结构，各发光单元中的载流子浓度进一步得到了平衡，所述有机电致发光器件10中的电流效率得到了进一步的提高，所述有机电致发光器件10的功率效率得到了进一步的提高，所述有机电致发光器件10的驱动电压得到了进一步的降低，所述有机电致发光器件10的功耗也得到了进一步的降低。
请一并参阅图3，图3为本发明另一较佳实施方式的有机电致发光器件的剖面结构示意图。在本实施方式中，所述第一电极120为阴极，所述第二电极180为阳极，所述第一类型载流子传输及注入层130为电子传输及注入层，所述第二类型载流子传输及注入层170为空穴传输及注入层，所述第一类型载流子为电子，所述第二类型载流子为空穴。
相应地，所述第一类型载流子传输及注入层130包括N型掺杂半导体材料，所述第二类型载流子传输及注入层170包括P型掺杂半导体材料。
在本实施方式中，所述异质结150包括层叠设置的N型半导体材料层151及P型半导体材料层152。所述P型半导体材料层152的一面设置在所述第一发光层140远离所述第一类型载流子传输及注入层130的一面，所述N型半导体材料层151远离所述P型半导体材料层152的一面设置在所述第二发光层160远离所述第二类型载流子传输及注入层170的一面。
本发明还提供了一种显示装置。请一并参阅图4，图4为本发明一较佳实施方式的显示装置的结构示意图。所述显示装置1可以包括但不仅限于为智能手机、互联网设备(Mobile Internet Device,MID)，电子书，便携式播放站(Play Station Portable,PSP)或者个人数字助理(Personal Digital Assistant,PDA)等便携式电子设备，也可以为显示器等。所述显示装置1包括有机电致发光器件10，所述有机电致发光器件10如前面所述，在此不再赘述。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (18)

  1. 一种有机电致发光器件，其中，所述有机电致发光器件包括：基板及依次层叠设置且设置在所述基板同侧的第一电极、第一类型载流子传输及注入层、第一发光层、异质结、第二发光层、第二类型载流子传输及注入层及第二电极，所述第一电极用于加载第一极性电压并提供第一类型载流子，所述第一类型载流子传输及注入层用于将所述第一类型载流子传输至所述第一发光层，所述第二电极用于加载第二极性电压并提供第二类型载流子，所述第二极性电压和所述第一极性电压形成第一电场，所述第二类型载流子传输及注入层用于将所述第二类型载流子传输至所述第二发光层，所述异质结内形成第二电场，所述第二电场的方向和所述第一电场的方向相反，所述异质结用于产生激子，所述激子在所述第一电场的作用下分离成第一类型载流子和第二类型载流子，所述第一电极产生的第一类型载流子与所述异质结产生的第二类型载流子在所述第一发光层中复合以产生第一光线，所述第二电极产生的第二类型载流子与所述异质结产生的第一类型载流子在所述第二发光层中复合以产生第二光线，所述第一光线与所述第二光线混光成白光并从所述基板远离所述第一电极的方向出射。
  2. 如权利要求1所述的有机电致发光器件，其中，所述第一电极为阳极，所述第二电极为阴极，所述第一类型载流子传输及注入层为空穴传输及注入层，所述第二类型载流子传输及注入层为电子传输及注入层，所述第一类型载流子为空穴，所述第二类型载流子为电子。
  3. 如权利要求2所述的有机电致发光器件，其中，所述第一类型载流子传输及注入层包括P型掺杂半导体材料，所述第二类型载流子传输及注入层包括N型掺杂半导体材料。
  4. 如权利要求3所述的有机电致发光器件，其中，所述异质结包括层叠设置的N型半导体材料层及P型半导体材料层，所述N型半导体材料层的一面 设置在所述第一发光层远离所述第一类型载流子传输及注入层的一面，所述P型半导体材料层远离所述N型半导体材料层的一面设置在所述第二发光层远离所述第二类型载流子传输及注入层的一面。
  5. 如权利要求3所述的有机电致发光器件，其中，所述第一发光层为蓝光发光层，所述第一光线为蓝光，所述第二发光层为黄光发光层，所述第二光线为黄光。
  6. 如权利要求2所述的有机电致发光器件，其中，第一电极为阴极，所述第二电极为阳极，所述第一类型载流子传输及注入层为电子传输及注入层，所述第二类型载流子传输及注入层为空穴传输及注入层，所述第一类型载流子为电子，所述第二类型载流子为空穴。
  7. 如权利要求6所述的有机电致发光器件，其中，所述第一类型载流子传输及注入层包括N型掺杂半导体材料，所述第二类型载流子传输及注入层包括P型掺杂半导体材料。
  8. 如权利要求7所述的有机电致发光器件，其中，所述异质结包括层叠设置的N型半导体材料层及P型半导体材料层，所述P型半导体材料层的一面设置在所述第一发光层远离所述第一类型载流子传输及注入层的一面，所述N型半导体材料层远离所述P型半导体材料层的一面设置在所述第二发光层远离所述第二类型载流子传输及注入层的一面。
  9. 如权利要求1所述的有机电致发光器件，其中，所述第一电极为透明电极，所述第二电极为金属电极。
  10. 一种显示装置，其中，所述显示装置包括有机电致发光器件，所述有机电致发光器件包括：基板及依次层叠设置且设置在所述基板同侧的第一电极、第一类型载流子传输及注入层、第一发光层、异质结、第二发光层、第二 类型载流子传输及注入层及第二电极，所述第一电极用于加载第一极性电压并提供第一类型载流子，所述第一类型载流子传输及注入层用于将所述第一类型载流子传输至所述第一发光层，所述第二电极用于加载第二极性电压并提供第二类型载流子，所述第二极性电压和所述第一极性电压形成第一电场，所述第二类型载流子传输及注入层用于将所述第二类型载流子传输至所述第二发光层，所述异质结内形成第二电场，所述第二电场的方向和所述第一电场的方向相反，所述异质结用于产生激子，所述激子在所述第一电场的作用下分离成第一类型载流子和第二类型载流子，所述第一电极产生的第一类型载流子与所述异质结产生的第二类型载流子在所述第一发光层中复合以产生第一光线，所述第二电极产生的第二类型载流子与所述异质结产生的第一类型载流子在所述第二发光层中复合以产生第二光线，所述第一光线与所述第二光线混光成白光并从所述基板远离所述第一电极的方向出射。
  11. 如权利要求10所述的显示装置，其中，所述第一电极为阳极，所述第二电极为阴极，所述第一类型载流子传输及注入层为空穴传输及注入层，所述第二类型载流子传输及注入层为电子传输及注入层，所述第一类型载流子为空穴，所述第二类型载流子为电子。
  12. 如权利要求11所述的显示装置，其中，所述第一类型载流子传输及注入层包括P型掺杂半导体材料，所述第二类型载流子传输及注入层包括N型掺杂半导体材料。
  13. 如权利要求12所述的显示装置，其中，所述异质结包括层叠设置的N型半导体材料层及P型半导体材料层，所述N型半导体材料层的一面设置在所述第一发光层远离所述第一类型载流子传输及注入层的一面，所述P型半导体材料层远离所述N型半导体材料层的一面设置在所述第二发光层远离所述第二类型载流子传输及注入层的一面。
  14. 如权利要求12所述的显示装置，其中，所述第一发光层为蓝光发光层， 所述第一光线为蓝光，所述第二发光层为黄光发光层，所述第二光线为黄光。
  15. 如权利要求11所述的显示装置，其中，第一电极为阴极，所述第二电极为阳极，所述第一类型载流子传输及注入层为电子传输及注入层，所述第二类型载流子传输及注入层为空穴传输及注入层，所述第一类型载流子为电子，所述第二类型载流子为空穴。
  16. 如权利要求15所述的显示装置，其中，所述第一类型载流子传输及注入层包括N型掺杂半导体材料，所述第二类型载流子传输及注入层包括P型掺杂半导体材料。
  17. 如权利要求16所述的显示装置，其中，所述异质结包括层叠设置的N型半导体材料层及P型半导体材料层，所述P型半导体材料层的一面设置在所述第一发光层远离所述第一类型载流子传输及注入层的一面，所述N型半导体材料层远离所述P型半导体材料层的一面设置在所述第二发光层远离所述第二类型载流子传输及注入层的一面。
  18. 如权利要求10所述的显示装置，其中，所述第一电极为透明电极，所述第二电极为金属电极。
PCT/CN2016/081461 2016-04-05 2016-05-09 有机电致发光器件及显示装置 Ceased WO2017173699A1 (zh)

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