WO2017152469A1 - 彩膜基板的制作方法及制得的彩膜基板 - Google Patents

彩膜基板的制作方法及制得的彩膜基板 Download PDF

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Publication number
WO2017152469A1
WO2017152469A1 PCT/CN2016/079234 CN2016079234W WO2017152469A1 WO 2017152469 A1 WO2017152469 A1 WO 2017152469A1 CN 2016079234 W CN2016079234 W CN 2016079234W WO 2017152469 A1 WO2017152469 A1 WO 2017152469A1
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Prior art keywords
photoresist
matrix
blocks
substrate
thickness
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Ceased
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PCT/CN2016/079234
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English (en)
French (fr)
Inventor
沈嘉文
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/031,747 priority Critical patent/US20180088458A1/en
Publication of WO2017152469A1 publication Critical patent/WO2017152469A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a color filter substrate and a prepared color filter substrate.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal display devices which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates, and the liquid crystal molecules are controlled to change direction by energizing or not, and the light of the backlight module is changed. Refracted to produce a picture.
  • a liquid crystal display panel comprises a CF (Color Filter) substrate, a thin film transistor (TFT) substrate, a liquid crystal (LC) sandwiched between the color filter substrate and the thin film transistor substrate, and a sealant frame ( Sealant) composition.
  • CF Color Filter
  • TFT thin film transistor
  • LC liquid crystal
  • Sealant sealant frame
  • FIG. 1 is a schematic diagram of a color model adopted by a conventional color film substrate.
  • the color model is a red, green, and blue color model, which is also called an RGB color model, which is an additive color model by using red (red) and green ( The shades of the three primary colors of Green and Blue are added in different proportions to produce a wide variety of shades.
  • 2 is a schematic cross-sectional view of a conventional color filter substrate
  • FIG. 3 is a schematic plan view of the color filter substrate of FIG. 2, as shown in FIG. 2-3, the color filter substrate includes a base substrate 100, and is disposed on a substrate.
  • the color photoresist layer 300 includes a plurality of red photoresist blocks 310, a plurality of green photoresist blocks 320, and a plurality of Blue photoresist block 330.
  • the method for fabricating the color filter substrate generally includes the following steps: Step 1.
  • Step 2 sequentially applying a red photoresist layer, a green photoresist layer, and a blue photoresist layer on the base substrate 100, and respectively performing pattern processing thereon to obtain a number a red photoresist block 310, a plurality of green photoresist blocks 320, and a plurality of blue photoresist blocks 330, thereby forming a color photoresist layer 300; then forming a common electrode on the color photoresist layer 300 and the black matrix 200 in sequence With spacers.
  • the black matrix 200, the red photoresist block 310, the green photoresist block 320, the blue photoresist block 330, the common electrode, and the spacers respectively need a process to complete, that is, a total of six processes are required to complete the fabrication of the color filter substrate.
  • the process is cumbersome, the production time is long, and the production cost is high.
  • Another object of the present invention is to provide a color filter substrate which has a simple structure, a low manufacturing cost, and a good filter effect.
  • the present invention provides a method for fabricating a color filter substrate, comprising the following steps:
  • Step 1 providing a substrate, setting a position of a black matrix on the substrate, and forming positions of the first, second, and third light blocking blocks corresponding to positions of the black matrix;
  • Step 2 using a first photoresist layer, corresponding to the position of the black matrix and the position of the first photoresist block respectively forming a first photoresist matrix on the substrate, and a plurality of first photoresist blocks;
  • Step 3 using a second photoresist layer, respectively corresponding to the position of the black matrix and the position of the second photoresist block to form a second photoresist matrix on the substrate, and a plurality of second photoresist blocks;
  • Step 4 using a third photoresist layer, respectively corresponding to the position of the black matrix and the position of the third photoresist block to form a third photoresist matrix on the substrate, and a plurality of third photoresist blocks;
  • the colors of the first photoresist matrix, the second photoresist matrix, and the third photoresist matrix corresponding to the position of the black matrix are mixed and displayed as black, thereby forming a black matrix and being black matrix.
  • the plurality of first photoresist blocks, the plurality of second photoresist blocks, and the plurality of third photoresist blocks are formed to form a color photoresist layer.
  • the step 2 is specifically: coating a first photoresist layer on the substrate, exposing and developing the first photoresist layer by using a halftone mask, respectively corresponding to the position of the black matrix and the first photoresist Positioning the block to form a first photoresist matrix on the substrate, and a plurality of first photoresist blocks;
  • the step 3 is specifically: coating a second photoresist layer on the substrate, the first photoresist matrix, and the plurality of first photoresist blocks, and performing the second photoresist layer by using a halftone mask. Exposing and developing, respectively forming a second photoresist matrix and a plurality of second photoresist blocks on the substrate corresponding to the position of the black matrix and the position of the second photoresist block;
  • the step 4 is specifically: coating a third photoresist layer on the substrate, the second photoresist matrix, the plurality of first photoresist blocks, and the plurality of second photoresist blocks, using a halftone mask pair
  • the third photoresist layer is exposed and developed, and a third photoresist matrix and a plurality of third photoresist blocks are formed on the substrate corresponding to the position of the black matrix and the position of the third photoresist block.
  • the thickness of the first photoresist matrix is 30-35% of the thickness of the first photoresist layer, and the thickness of the first photoresist block is the thickness of the first photoresist layer. 100%;
  • the thickness of the second photoresist matrix is 30-35% of the thickness of the second photoresist layer, and the thickness of the second photoresist block is the thickness of the second photoresist layer. 100%;
  • the thickness of the third photoresist matrix is 30-35% of the thickness of the third photoresist layer, and the thickness of the third photoresist block is 100 of the thickness of the third photoresist layer. %.
  • the first photoresist matrix, the second photoresist matrix, and the third photoresist matrix have the same thickness.
  • the first photoresist, the second photoresist, and the third photoresist are any combination of magenta, cyan, and yellow photoresists.
  • the OD values of the first photoresist, the second photoresist, and the third photoresist are all between 0 and 4.
  • the invention also provides a method for manufacturing a color film substrate, comprising the following steps:
  • Step 1 providing a substrate, setting a position of a black matrix on the substrate, and forming positions of the first, second, and third light blocking blocks corresponding to positions of the black matrix;
  • Step 2 using a first photoresist layer, corresponding to the position of the black matrix and the position of the first photoresist block respectively forming a first photoresist matrix on the substrate, and a plurality of first photoresist blocks;
  • Step 3 using a second photoresist layer, respectively corresponding to the position of the black matrix and the position of the second photoresist block to form a second photoresist matrix on the substrate, and a plurality of second photoresist blocks;
  • Step 4 using a third photoresist layer, respectively corresponding to the position of the black matrix and the position of the third photoresist block to form a third photoresist matrix on the substrate, and a plurality of third photoresist blocks;
  • the colors of the first photoresist matrix, the second photoresist matrix, and the third photoresist matrix corresponding to the position of the black matrix are mixed and displayed as black, thereby forming a black matrix and being black matrix.
  • the plurality of first photoresist blocks, the plurality of second photoresist blocks, and the plurality of third photoresist blocks are formed to form a color photoresist layer.
  • the step 2 is specifically: coating a first photoresist layer on the substrate, and exposing and developing the first photoresist layer by using a halftone mask, respectively corresponding to the position of the black matrix and the first The position of the photoresist block forms a first photoresist matrix on the substrate, and a plurality of first photoresist blocks;
  • the step 3 is specifically: coating a second photoresist layer on the substrate, the first photoresist matrix, and the plurality of first photoresist blocks, and performing the second photoresist layer by using a halftone mask. Exposing and developing, respectively forming a second photoresist matrix and a plurality of second photoresist blocks on the substrate corresponding to the position of the black matrix and the position of the second photoresist block;
  • the step 4 is specifically: coating a third photoresist layer on the substrate, the second photoresist matrix, the plurality of first photoresist blocks, and the plurality of second photoresist blocks, using a halftone mask pair
  • the third photoresist layer is exposed and developed, and a third photoresist matrix and a plurality of third photoresist blocks are formed on the substrate corresponding to the position of the black matrix and the position of the third photoresist block.
  • the invention also provides a color filter substrate, comprising: a substrate, and a black matrix and a color photoresist layer disposed on the substrate;
  • the black matrix comprises a first photoresist matrix and a second photoresist matrix arranged in a stack, And a third photoresist matrix, wherein the colors of the first photoresist matrix, the second photoresist matrix, and the third photoresist matrix are mixed and displayed as black;
  • the color photoresist layer includes a plurality of black matrixes The first photoresist block, the plurality of second photoresist blocks, and the plurality of third photoresist blocks.
  • the first photoresist, the second photoresist, and the third photoresist are any combination of magenta, cyan, and yellow photoresists.
  • the OD values of the first photoresist, the second photoresist, and the third photoresist are all between 0 and 4.
  • the first photoresist matrix, the second photoresist matrix, and the third photoresist matrix have the same thickness.
  • the present invention provides a method for fabricating a color filter substrate by sequentially forming first, second, and third photoresist layers on a substrate, and respectively respectively, for the first, second, and third photoresists
  • the layer is patterned to obtain first, second, and third photoresist matrices stacked in a stack, a plurality of first photoresist blocks, a plurality of second photoresist blocks, and a plurality of third photoresist blocks,
  • First, the second and third photoresist matrix colors are mixed and displayed as black, thereby forming a black matrix, a plurality of first photoresist blocks, a plurality of second photoresist blocks, and a plurality of thirds separated by a black matrix.
  • the photoresist block constitutes a color photoresist layer; the invention forms a black matrix while forming a color photoresist layer, which saves a process time compared with the prior art, saves the use of the black matrix material, and reduces the production cost.
  • the color film substrate prepared by the invention has simple structure, low manufacturing cost and good filtering effect.
  • FIG. 1 is a schematic view showing a color model adopted by a conventional color film substrate
  • FIG. 2 is a cross-sectional view showing a conventional color filter substrate
  • FIG. 3 is a top plan view of the color filter substrate of FIG. 2;
  • FIG. 4 is a schematic view of a color model adopted by the present invention.
  • step 1 is a schematic view of step 1 of a method for fabricating a color filter substrate of the present invention
  • 6-7 are schematic views showing the second step of the method for fabricating the color filter substrate of the present invention.
  • 8-9 is a schematic view showing the step 3 of the method for fabricating the color filter substrate of the present invention.
  • FIGS. 10-11 are schematic views showing the step 4 of the method for fabricating the color filter substrate of the present invention.
  • FIG. 12 is a schematic view showing the distribution of the black matrix and the color photoresist layer obtained in steps 2-4.
  • the object of the present invention is to form a plurality of photoresist matrices arranged in a stack on a substrate corresponding to a position of a black matrix in a process of fabricating a color photoresist layer by using a plurality of color resists to produce gray scale characteristics.
  • the color, thickness and OD value (optical density) of the photoresist matrix are displayed in black after color mixing to form a black matrix. For example, as shown in FIG.
  • magenta (M, Magenta) and cyan (C, Cyan), yellow (Y, Yellow) color model to make a color photoresist layer in the production of a number of magenta, cyan, yellow photoresist blocks forming a color photoresist layer, the position of the corresponding black matrix on the substrate Forming a magenta, cyan, and yellow photoresist matrix arranged in a stack, and controlling the color, thickness, and OD value (optical density) of the magenta, cyan, and yellow photoresist matrices to be black after being mixed, thereby forming a black matrix.
  • the manufacturing method of the color film substrate can save the processing time of a black matrix, save the use of the black matrix material, and reduce the production cost.
  • the present invention provides a method for fabricating a color film substrate, comprising the following steps:
  • Step 1 as shown in FIG. 5, a substrate 10 is provided, and a position of a black matrix is disposed on the substrate 10, and positions of the first, second, and third photoresist blocks are formed corresponding to positions of the black matrix.
  • the substrate 10 is a transparent substrate, preferably a glass substrate.
  • Step 2 as shown in FIG. 6-7, using the first photoresist layer 21, respectively forming a first photoresist matrix 31 on the substrate 10 corresponding to the position of the black matrix and the position of the first photoresist block, and a plurality of first Photoresist block 41.
  • the step 2 is specifically: coating the first photoresist layer 21 on the substrate 10, exposing and developing the first photoresist layer 21 by using a halftone mask, respectively corresponding to the position of the black matrix and the first A position of a photoresist block forms a first photoresist matrix 31 and a plurality of first photoresist blocks 41 on the substrate 10.
  • the thickness of the first photoresist matrix 31 is 30 to 35% of the thickness of the first photoresist layer 21, and the thickness of the first photoresist block 41 is the first 100% of the thickness of a photoresist layer 21.
  • Step 3 as shown in FIG. 8-9, using the second photoresist layer 22, respectively forming a second photoresist matrix 32 and a plurality of second on the substrate 10 corresponding to the position of the black matrix and the position of the second photoresist block.
  • Photoresist block 42 using the second photoresist layer 22, respectively forming a second photoresist matrix 32 and a plurality of second on the substrate 10 corresponding to the position of the black matrix and the position of the second photoresist block.
  • the step 3 is specifically: the substrate 10, the first photoresist matrix 31, and the plurality of first lights
  • the second photoresist layer 22 is coated on the block 41, and the second photoresist layer 22 is exposed and developed by using a halftone mask, respectively corresponding to the position of the black matrix and the position of the second photoresist block on the substrate 10.
  • a second photoresist matrix 32 and a plurality of second photoresist blocks 42 are formed thereon.
  • the thickness of the second photoresist matrix 32 is 30 to 35% of the thickness of the second photoresist layer 22, and the thickness of the second photoresist block 42 is the first The thickness of the two photoresist layers 22 is 100%.
  • Step 4 as shown in FIG. 10-11, using the third photoresist layer 23, respectively forming a third photoresist matrix 33 on the substrate 10 corresponding to the position of the black matrix and the position of the third photoresist block, and a plurality of third Photoresist block 43.
  • the step 4 is specifically: coating the third photoresist layer 23 on the substrate 10, the second photoresist matrix 32, the plurality of first photoresist blocks 41, and the plurality of second photoresist blocks 42 by using a The half-tone mask exposes and develops the third photoresist layer 23, and forms a third photoresist matrix 33 and a plurality of third lights on the substrate 10 corresponding to the position of the black matrix and the position of the third photoresist block, respectively.
  • Block 43 is specifically: coating the third photoresist layer 23 on the substrate 10, the second photoresist matrix 32, the plurality of first photoresist blocks 41, and the plurality of second photoresist blocks 42 by using a The half-tone mask exposes and develops the third photoresist layer 23, and forms a third photoresist matrix 33 and a plurality of third lights on the substrate 10 corresponding to the position of the black matrix and the position of the third photoresist block, respectively.
  • Block 43 is specifically: coating the third photores
  • the colors of the first photoresist matrix 31, the second photoresist matrix 32, and the third photoresist matrix 33 corresponding to the positions of the black matrix are mixed and displayed.
  • the black matrix 30 is formed, and the plurality of first photoresist blocks 41, the plurality of second photoresist blocks 42, and the plurality of third photoresist blocks 43 spaced apart by the black matrix 30 constitute the color photoresist layer 40.
  • the thickness of the third photoresist matrix 33 is 30-35% of the thickness of the third photoresist layer 23, and the thickness of the third photoresist block 43 is the first The thickness of the three photoresist layer 23 is 100%.
  • the first photoresist matrix 31, the second photoresist matrix 32, and the third photoresist matrix 33 have the same thickness.
  • the first photoresist, the second photoresist, and the third photoresist are any combination of magenta, cyan, and yellow photoresists.
  • the OD values of the first photoresist, the second photoresist, and the third photoresist are all between 0 and 4.
  • the method further includes the step of sequentially forming a common electrode and a spacer on the black matrix 30 and the color photoresist layer 40.
  • the material of the common electrode is a transparent conductive material, preferably a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or indium antimony zinc oxide.
  • the material of the spacer is a photoresist.
  • the present invention further provides a color filter substrate, comprising: a substrate 10, and a black matrix 30 and a color photoresist layer 40 disposed on the substrate 10; the black matrix 30 includes stacked The first photoresist matrix 31, the second photoresist matrix 32, and the third photoresist matrix 33 are mixed with the colors of the first photoresist matrix 31, the second photoresist matrix 32, and the third photoresist matrix 33.
  • the color resist layer 40 includes a plurality of first photoresist blocks 41, a plurality of second photoresist blocks 42, and a plurality of third photoresist blocks 43 separated by a black matrix 30.
  • the first photoresist, the second photoresist, and the third photoresist are any combination of magenta, cyan, and yellow photoresists.
  • the OD values of the first photoresist, the second photoresist, and the third photoresist are all between 0 and 4.
  • the first photoresist matrix 31, the second photoresist matrix 32, and the third photoresist matrix 33 have the same thickness.
  • the color filter substrate of the present invention further includes a common electrode and a spacer disposed on the black matrix 30 and the color photoresist layer 40.
  • the material of the common electrode is a transparent conductive material, preferably a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or indium antimony zinc oxide.
  • the material of the spacer is a photoresist.
  • the substrate 10 is a transparent substrate, preferably a glass substrate.
  • the present invention provides a method for fabricating a color filter substrate by sequentially forming first, second, and third photoresist layers on a substrate, and respectively, respectively, for the first, second, and third photoresist layers.
  • Performing a patterning process to obtain first, second, and third photoresist matrices stacked in a stack, a plurality of first photoresist blocks, a plurality of second photoresist blocks, and a plurality of third photoresist blocks the first The colors of the second and third photoresist matrices are mixed and displayed as black, thereby forming a black matrix, a plurality of first photoresist blocks, a plurality of second photoresist blocks, and a plurality of third lights separated by a black matrix.
  • the block forms a color photoresist layer; the invention forms a black matrix while forming a color photoresist layer, which saves a process time compared with the prior art, saves the use of the black matrix material, and reduces the production cost.
  • the color film substrate of the invention has simple structure, low manufacturing cost and good filter effect.

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  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种彩膜基板的制作方法及制得的彩膜基板，通过在基板（10）上依次形成第一、第二、第三光阻层（21、22、23），并分别对第一、第二、第三光阻层（21、22、23）进行图形化处理，得到堆叠设置的第一、第二、第三光阻矩阵（31、32、33）、数个第一光阻块（41）、数个第二光阻块（42）、以及数个第三光阻块（43），所述第一、第二、第三光阻矩阵（31、32、33）的色彩混合后显示为黑色，从而形成黑色矩阵（30），被黑色矩阵（30）间隔开的数个第一光阻块（41）、数个第二光阻块（42）、及数个第三光阻块（43）构成彩色光阻层（40）；通过在制作彩色光阻层（40）的同时形成黑色矩阵（30），与现有技术相比，节省一道制程时间，省去了黑色矩阵（30）材料的使用，并降低生产成本，制得的彩膜基板，结构简单，制作成本低，且具有良好的滤光效果。

Description

彩膜基板的制作方法及制得的彩膜基板 技术领域
本发明涉及显示技术领域，尤其涉及一种彩膜基板的制作方法及制得的彩膜基板。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜(CF，Color Filter)基板、薄膜晶体管(TFT，Thin Film Transistor)基板、夹于彩膜基板与薄膜晶体管基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成。
图1为现有的彩膜基板采用的颜色模型的示意图，所述颜色模型为红绿蓝颜色模型，又称RGB颜色模型，其为一种加色模型，通过将红(Red)、绿(Green)、蓝(Blue)三原色的色光以不同的比例相加，以产生多种多样的色光。图2为现有的彩膜基板的剖视示意图，图3为图2的彩膜基板的俯视示意图，如图2-3所示，所述彩膜基板包括衬底基板100、设于衬底基板100上的黑色矩阵200与彩色光阻层300，所述彩色光阻层300包括被所述黑色矩阵200间隔开的数个红色光阻块310、数个绿色光阻块320、及数个蓝色光阻块330。该彩膜基板的制作方法通常包括如下步骤：步骤1、提供一衬底基板100，在所述衬底基板100上涂布黑色光阻材料，形成黑色遮光层，之后对所述黑色遮光层进行图案化处理，得到黑色矩阵200；步骤2、在所述衬底基板100上依次涂布红色光阻层、绿色光阻层、及蓝色光阻层，并分别对其进行图形化处理，得到数个红色光阻块310、数个绿色光阻块320、及数个蓝色光阻块330，从而形成彩色光阻层300；之后在所述彩色光阻层300与黑色矩阵200上依次形成公共电极与间隙物。该制作方法中， 黑色矩阵200、红色光阻块310、绿色光阻块320、蓝色光阻块330、公共电极、及间隙物分别需要一道制程来完成，即，共需6道制程来完成彩膜基板的制作，制程较为繁琐，生产时间长，且生产成本较高。
发明内容
本发明的目的在于提供一种彩膜基板的制作方法，不需要采用一道单独的制程来制作黑色矩阵，可省去黑色矩阵材料的使用，并减少制程时间。
本发明的目的还在于提供一种彩膜基板，结构简单，制作成本低，且具有良好的滤光效果。
为实现上述目的，本发明提供一种彩膜基板的制作方法，包括如下步骤：
步骤1、提供一基板，在所述基板上设置黑色矩阵的位置，对应黑色矩阵的位置形成数个第一、第二与第三光阻块的位置；
步骤2、采用第一光阻层，分别对应黑色矩阵的位置与第一光阻块的位置在基板上形成第一光阻矩阵、以及数个第一光阻块；
步骤3、采用第二光阻层，分别对应黑色矩阵的位置与第二光阻块的位置在基板上形成第二光阻矩阵、以及数个第二光阻块；
步骤4、采用第三光阻层，分别对应黑色矩阵的位置与第三光阻块的位置在基板上形成第三光阻矩阵、以及数个第三光阻块；
经过步骤2至步骤4后，对应黑色矩阵的位置堆叠设置的第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的色彩混合后显示为黑色，从而形成黑色矩阵，被黑色矩阵间隔开的数个第一光阻块、数个第二光阻块、及数个第三光阻块构成彩色光阻层。
所述步骤2具体为：在所述基板上涂布第一光阻层，采用一道半色调光罩对所述第一光阻层进行曝光、显影，分别对应黑色矩阵的位置与第一光阻块的位置在基板上形成第一光阻矩阵、以及数个第一光阻块；
所述步骤3具体为：在所述基板、第一光阻矩阵、及数个第一光阻块上涂布第二光阻层，采用一道半色调光罩对所述第二光阻层进行曝光、显影，分别对应黑色矩阵的位置与第二光阻块的位置在基板上形成第二光阻矩阵、以及数个第二光阻块；
所述步骤4具体为：在所述基板、第二光阻矩阵、数个第一光阻块、及数个第二光阻块上涂布第三光阻层，采用一道半色调光罩对所述第三光阻层进行曝光、显影，分别对应黑色矩阵的位置与第三光阻块的位置在基板上形成第三光阻矩阵、以及数个第三光阻块。
所述步骤2中，所述第一光阻矩阵的厚度为所述第一光阻层的厚度的30～35％，所述第一光阻块的厚度为所述第一光阻层厚度的100％；
所述步骤3中，所述第二光阻矩阵的厚度为所述第二光阻层的厚度的30～35％，所述第二光阻块的厚度为所述第二光阻层的厚度的100％；
所述步骤4中，所述第三光阻矩阵的厚度为所述第三光阻层厚度的30～35％，所述第三光阻块的厚度为所述第三光阻层厚度的100％。
所述第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的厚度相同。
所述第一光阻、第二光阻、第三光阻为品红色、青色、黄色光阻的任意排列组合。
所述第一光阻、第二光阻、第三光阻的OD值均在0～4之间。
本发明还提供一种彩膜基板的制作方法，包括如下步骤：
步骤1、提供一基板，在所述基板上设置黑色矩阵的位置，对应黑色矩阵的位置形成数个第一、第二与第三光阻块的位置；
步骤2、采用第一光阻层，分别对应黑色矩阵的位置与第一光阻块的位置在基板上形成第一光阻矩阵、以及数个第一光阻块；
步骤3、采用第二光阻层，分别对应黑色矩阵的位置与第二光阻块的位置在基板上形成第二光阻矩阵、以及数个第二光阻块；
步骤4、采用第三光阻层，分别对应黑色矩阵的位置与第三光阻块的位置在基板上形成第三光阻矩阵、以及数个第三光阻块；
经过步骤2至步骤4后，对应黑色矩阵的位置堆叠设置的第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的色彩混合后显示为黑色，从而形成黑色矩阵，被黑色矩阵间隔开的数个第一光阻块、数个第二光阻块、及数个第三光阻块构成彩色光阻层。
其中，所述步骤2具体为：在所述基板上涂布第一光阻层，采用一道半色调光罩对所述第一光阻层进行曝光、显影，分别对应黑色矩阵的位置与第一光阻块的位置在基板上形成第一光阻矩阵、以及数个第一光阻块；
所述步骤3具体为：在所述基板、第一光阻矩阵、及数个第一光阻块上涂布第二光阻层，采用一道半色调光罩对所述第二光阻层进行曝光、显影，分别对应黑色矩阵的位置与第二光阻块的位置在基板上形成第二光阻矩阵、以及数个第二光阻块；
所述步骤4具体为：在所述基板、第二光阻矩阵、数个第一光阻块、及数个第二光阻块上涂布第三光阻层，采用一道半色调光罩对所述第三光阻层进行曝光、显影，分别对应黑色矩阵的位置与第三光阻块的位置在基板上形成第三光阻矩阵、以及数个第三光阻块。
本发明还提供一种彩膜基板，包括：基板、以及设于所述基板上的黑色矩阵与彩色光阻层；所述黑色矩阵包括堆叠设置的第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵，所述第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的色彩混合后显示为黑色；所述彩色光阻层包括被黑色矩阵间隔开的数个第一光阻块、数个第二光阻块、及数个第三光阻块。
所述第一光阻、第二光阻、第三光阻为品红色、青色、黄色光阻的任意排列组合。
所述第一光阻、第二光阻、第三光阻的OD值均在0～4之间。
所述第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的厚度相同。
本发明的有益效果：本发明提供的一种彩膜基板的制作方法，通过在基板上依次形成第一、第二、第三光阻层，并分别对第一、第二、第三光阻层进行图形化处理，得到堆叠设置的第一、第二、第三光阻矩阵、数个第一光阻块、数个第二光阻块、以及数个第三光阻块，所述第一、第二、第三光阻矩阵的色彩混合后显示为黑色，从而形成黑色矩阵，被黑色矩阵间隔开的数个第一光阻块、数个第二光阻块、及数个第三光阻块构成彩色光阻层；本发明通过在制作彩色光阻层的同时形成黑色矩阵，与现有技术相比，节省一道制程时间，省去了黑色矩阵材料的使用，并降低生产成本。本发明制得的彩膜基板，结构简单，制作成本低，且具有良好的滤光效果。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的彩膜基板采用的颜色模型的示意图；
图2为现有的彩膜基板的剖视示意图；
图3为图2的彩膜基板的俯视示意图；
图4为本发明采用的一种颜色模型的示意图；
图5为本发明的彩膜基板的制作方法的步骤1的示意图；
图6-7为本发明的彩膜基板的制作方法的步骤2的示意图；
图8-9为本发明的彩膜基板的制作方法的步骤3的示意图；
图10-11为本发明的彩膜基板的制作方法的步骤4的示意图；
图12为经过步骤2-4得到的黑色矩阵和彩色光阻层的分布示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明的目的在于：利用多种色阻混合后产生灰阶的特性，在制作彩色光阻层的过程中，于基板上对应黑色矩阵的位置形成堆叠设置的数个光阻矩阵，通过控制数个光阻矩阵的颜色、厚度和OD值(光密度)，使其混色后显示为黑色，从而形成黑色矩阵，例如，如图4所示，采用品红色(M,Magenta)、青色(C,Cyan)、黄色(Y,Yellow)这一颜色模型来制作彩色光阻层，在制作构成彩色光阻层的数个品红色、青色、黄色光阻块的同时，在基板上对应黑色矩阵的位置形成堆叠设置的品红色、青色、黄色光阻矩阵，通过控制品红色、青色、黄色光阻矩阵的颜色、厚度和OD值(光密度)，使其混色后显示为黑色，从而形成黑色矩阵，与现有技术相比，该彩膜基板的制作方法可节省一道黑色矩阵的制程时间，省去黑色矩阵材料的使用，并降低生产成本。
请参阅图5-12，本发明提供一种彩膜基板的制作方法，包括如下步骤：
步骤1、如图5所示，提供一基板10，在所述基板10上设置黑色矩阵的位置，对应黑色矩阵的位置形成数个第一、第二与第三光阻块的位置。
具体的，所述基板10为透明基板，优选为玻璃基板。
步骤2、如图6-7所示，采用第一光阻层21，分别对应黑色矩阵的位置与第一光阻块的位置在基板10上形成第一光阻矩阵31、以及数个第一光阻块41。
所述步骤2具体为：在所述基板10上涂布第一光阻层21，采用一道半色调光罩对所述第一光阻层21进行曝光、显影，分别对应黑色矩阵的位置与第一光阻块的位置在基板10上形成第一光阻矩阵31、以及数个第一光阻块41。
具体的，所述步骤2中，所述第一光阻矩阵31的厚度为所述第一光阻层21的厚度的30～35％，所述第一光阻块41的厚度为所述第一光阻层21的厚度的100％。
步骤3、如图8-9所示，采用第二光阻层22，分别对应黑色矩阵的位置与第二光阻块的位置在基板10上形成第二光阻矩阵32、以及数个第二光阻块42。
所述步骤3具体为：在所述基板10、第一光阻矩阵31、及数个第一光 阻块41上涂布第二光阻层22，采用一道半色调光罩对所述第二光阻层22进行曝光、显影，分别对应黑色矩阵的位置与第二光阻块的位置在基板10上形成第二光阻矩阵32、以及数个第二光阻块42。
具体的，所述步骤3中，所述第二光阻矩阵32的厚度为所述第二光阻层22的厚度的30～35％，所述第二光阻块42的厚度为所述第二光阻层22的厚度的100％。
步骤4、如图10-11所示，采用第三光阻层23，分别对应黑色矩阵的位置与第三光阻块的位置在基板10上形成第三光阻矩阵33、以及数个第三光阻块43。
所述步骤4具体为：在所述基板10、第二光阻矩阵32、数个第一光阻块41、及数个第二光阻块42上涂布第三光阻层23，采用一道半色调光罩对所述第三光阻层23进行曝光、显影，分别对应黑色矩阵的位置与第三光阻块的位置在基板10上形成第三光阻矩阵33、以及数个第三光阻块43。
如图11-12所示，经过步骤2至步骤4后，对应黑色矩阵的位置堆叠设置的第一光阻矩阵31、第二光阻矩阵32、及第三光阻矩阵33的色彩混合后显示为黑色，从而形成黑色矩阵30，被黑色矩阵30间隔开的数个第一光阻块41、数个第二光阻块42、及数个第三光阻块43构成彩色光阻层40。
具体的，所述步骤4中，所述第三光阻矩阵33的厚度为所述第三光阻层23的厚度的30～35％，所述第三光阻块43的厚度为所述第三光阻层23的厚度的100％。
优选的，所述第一光阻矩阵31、第二光阻矩阵32、及第三光阻矩阵33的厚度相同。
优选的，所述第一光阻、第二光阻、第三光阻为品红色、青色、黄色光阻的任意排列组合。
具体的，所述第一光阻、第二光阻、第三光阻的OD值均在0～4之间。
进一步的，还包括步骤5、在所述黑色矩阵30、及彩色光阻层40上依次形成公共电极和间隙物。
具体的，所述公共电极的材料为透明导电材料，优选为金属氧化物，如铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、或铟锗锌氧化物。
具体的，所述间隙物的材料为光阻。
请参阅图11-12，本发明还提供一种彩膜基板，包括：基板10、以及设于所述基板10上的黑色矩阵30与彩色光阻层40；所述黑色矩阵30包括堆叠设置的第一光阻矩阵31、第二光阻矩阵32、及第三光阻矩阵33，所述第一光阻矩阵31、第二光阻矩阵32、及第三光阻矩阵33的色彩混合后显示 为黑色；所述彩色光阻层40包括被黑色矩阵30间隔开的数个第一光阻块41、数个第二光阻块42、及数个第三光阻块43。
具体的，所述第一光阻、第二光阻、第三光阻为品红色、青色、黄色光阻的任意排列组合。
具体的，所述第一光阻、第二光阻、第三光阻的OD值均在0～4之间。
优选的，所述第一光阻矩阵31、第二光阻矩阵32、及第三光阻矩阵33的厚度相同。
进一步的，本发明的彩膜基板还包括设于所述黑色矩阵30、及彩色光阻层40上的公共电极和间隙物。
具体的，所述公共电极的材料为透明导电材料，优选为金属氧化物，如铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、或铟锗锌氧化物。
具体的，所述间隙物的材料为光阻。
具体的，所述基板10为透明基板，优选为玻璃基板。
综上所述，本发明提供的一种彩膜基板的制作方法，通过在基板上依次形成第一、第二、第三光阻层，并分别对第一、第二、第三光阻层进行图形化处理，得到堆叠设置的第一、第二、第三光阻矩阵、数个第一光阻块、数个第二光阻块、以及数个第三光阻块，所述第一、第二、第三光阻矩阵的色彩混合后显示为黑色，从而形成黑色矩阵，被黑色矩阵间隔开的数个第一光阻块、数个第二光阻块、及数个第三光阻块构成彩色光阻层；本发明通过在制作彩色光阻层的同时形成黑色矩阵，与现有技术相比，节省一道制程时间，省去了黑色矩阵材料的使用，并降低生产成本。本发明的彩膜基板，结构简单，制作成本低，且具有良好的滤光效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种彩膜基板的制作方法，包括如下步骤：
    步骤1、提供一基板，在所述基板上设置黑色矩阵的位置，对应黑色矩阵的位置形成数个第一、第二与第三光阻块的位置；
    步骤2、采用第一光阻层，分别对应黑色矩阵的位置与第一光阻块的位置在基板上形成第一光阻矩阵、以及数个第一光阻块；
    步骤3、采用第二光阻层，分别对应黑色矩阵的位置与第二光阻块的位置在基板上形成第二光阻矩阵、以及数个第二光阻块；
    步骤4、采用第三光阻层，分别对应黑色矩阵的位置与第三光阻块的位置在基板上形成第三光阻矩阵、以及数个第三光阻块；
    经过步骤2至步骤4后，对应黑色矩阵的位置堆叠设置的第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的色彩混合后显示为黑色，从而形成黑色矩阵，被黑色矩阵间隔开的数个第一光阻块、数个第二光阻块、及数个第三光阻块构成彩色光阻层。
  2. 如权利要求1所述的彩膜基板的制作方法，其中，所述步骤2具体为：在所述基板上涂布第一光阻层，采用一道半色调光罩对所述第一光阻层进行曝光、显影，分别对应黑色矩阵的位置与第一光阻块的位置在基板上形成第一光阻矩阵、以及数个第一光阻块；
    所述步骤3具体为：在所述基板、第一光阻矩阵、及数个第一光阻块上涂布第二光阻层，采用一道半色调光罩对所述第二光阻层进行曝光、显影，分别对应黑色矩阵的位置与第二光阻块的位置在基板上形成第二光阻矩阵、以及数个第二光阻块；
    所述步骤4具体为：在所述基板、第二光阻矩阵、数个第一光阻块、及数个第二光阻块上涂布第三光阻层，采用一道半色调光罩对所述第三光阻层进行曝光、显影，分别对应黑色矩阵的位置与第三光阻块的位置在基板上形成第三光阻矩阵、以及数个第三光阻块。
  3. 如权利要求1所述的彩膜基板的制作方法，其中，所述步骤2中，所述第一光阻矩阵的厚度为所述第一光阻层的厚度的30～35％，所述第一光阻块的厚度为所述第一光阻层的厚度的100％；
    所述步骤3中，所述第二光阻矩阵的厚度为所述第二光阻层的厚度的30～35％，所述第二光阻块的厚度为所述第二光阻层的厚度的100％；
    所述步骤4中，所述第三光阻矩阵的厚度为所述第三光阻层的厚度的 30～35％，所述第三光阻块的厚度为所述第三光阻层的厚度的100％。
  4. 如权利要求1所述的彩膜基板的制作方法，其中，所述第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的厚度相同。
  5. 如权利要求1所述的彩膜基板的制作方法，其中，所述第一光阻、第二光阻、第三光阻为品红色、青色、黄色光阻的任意排列组合。
  6. 如权利要求1所述的彩膜基板的制作方法，其中，所述第一光阻、第二光阻、第三光阻的OD值均在0～4之间。
  7. 一种彩膜基板的制作方法，包括如下步骤：
    步骤1、提供一基板，在所述基板上设置黑色矩阵的位置，对应黑色矩阵的位置形成数个第一、第二与第三光阻块的位置；
    步骤2、采用第一光阻层，分别对应黑色矩阵的位置与第一光阻块的位置在基板上形成第一光阻矩阵、以及数个第一光阻块；
    步骤3、采用第二光阻层，分别对应黑色矩阵的位置与第二光阻块的位置在基板上形成第二光阻矩阵、以及数个第二光阻块；
    步骤4、采用第三光阻层，分别对应黑色矩阵的位置与第三光阻块的位置在基板上形成第三光阻矩阵、以及数个第三光阻块；
    经过步骤2至步骤4后，对应黑色矩阵的位置堆叠设置的第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的色彩混合后显示为黑色，从而形成黑色矩阵，被黑色矩阵间隔开的数个第一光阻块、数个第二光阻块、及数个第三光阻块构成彩色光阻层。
    其中，所述步骤2具体为：在所述基板上涂布第一光阻层，采用一道半色调光罩对所述第一光阻层进行曝光、显影，分别对应黑色矩阵的位置与第一光阻块的位置在基板上形成第一光阻矩阵、以及数个第一光阻块；
    所述步骤3具体为：在所述基板、第一光阻矩阵、及数个第一光阻块上涂布第二光阻层，采用一道半色调光罩对所述第二光阻层进行曝光、显影，分别对应黑色矩阵的位置与第二光阻块的位置在基板上形成第二光阻矩阵、以及数个第二光阻块；
    所述步骤4具体为：在所述基板、第二光阻矩阵、数个第一光阻块、及数个第二光阻块上涂布第三光阻层，采用一道半色调光罩对所述第三光阻层进行曝光、显影，分别对应黑色矩阵的位置与第三光阻块的位置在基板上形成第三光阻矩阵、以及数个第三光阻块。
  8. 如权利要求7所述的彩膜基板的制作方法，其中，所述步骤2中，所述第一光阻矩阵的厚度为所述第一光阻层的厚度的30～35％，所述第一光阻块的厚度为所述第一光阻层的厚度的100％；
    所述步骤3中，所述第二光阻矩阵的厚度为所述第二光阻层的厚度的30～35％，所述第二光阻块的厚度为所述第二光阻层的厚度的100％；
    所述步骤4中，所述第三光阻矩阵的厚度为所述第三光阻层的厚度的30～35％，所述第三光阻块的厚度为所述第三光阻层的厚度的100％。
  9. 如权利要求7所述的彩膜基板的制作方法，其中，所述第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的厚度相同。
  10. 如权利要求7所述的彩膜基板的制作方法，其中，所述第一光阻、第二光阻、第三光阻为品红色、青色、黄色光阻的任意排列组合。
  11. 如权利要求7所述的彩膜基板的制作方法，其中，所述第一光阻、第二光阻、第三光阻的OD值均在0～4之间。
  12. 一种彩膜基板，包括：基板、以及设于所述基板上的黑色矩阵与彩色光阻层；所述黑色矩阵包括堆叠设置的第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵，所述第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的色彩混合后显示为黑色；所述彩色光阻层包括被黑色矩阵间隔开的数个第一光阻块、数个第二光阻块、及数个第三光阻块。
  13. 如权利要求12所述的彩膜基板，其中，所述第一光阻、第二光阻、第三光阻为品红色、青色、黄色光阻的任意排列组合。
  14. 如权利要求12所述的彩膜基板，其中，所述第一光阻、第二光阻、第三光阻的OD值均在0～4之间。
  15. 如权利要求12所述的彩膜基板，其中，所述第一光阻矩阵、第二光阻矩阵、及第三光阻矩阵的厚度相同。
PCT/CN2016/079234 2016-03-07 2016-04-14 彩膜基板的制作方法及制得的彩膜基板 Ceased WO2017152469A1 (zh)

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