WO2017140137A1 - 基于mim高灵敏度spp温度光开关 - Google Patents

基于mim高灵敏度spp温度光开关 Download PDF

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Publication number
WO2017140137A1
WO2017140137A1 PCT/CN2016/106604 CN2016106604W WO2017140137A1 WO 2017140137 A1 WO2017140137 A1 WO 2017140137A1 CN 2016106604 W CN2016106604 W CN 2016106604W WO 2017140137 A1 WO2017140137 A1 WO 2017140137A1
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Prior art keywords
waveguide
mim
optical switch
control light
switch
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PCT/CN2016/106604
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English (en)
French (fr)
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欧阳征标
陈治良
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深圳大学
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass

Definitions

  • the present invention relates to a high extinction ratio, nanoscale optical switch, and more particularly to a high sensitivity SPP optical switch based on a conductor-insulator-conductor (MIM) structure.
  • MIM conductor-insulator-conductor
  • SPP surface plasmon
  • SPP surface plasmon
  • optical cross-connectors and optical cross-multiplexers are needed between the networks to satisfy the exchange of information.
  • These devices are composed of optical switch arrays.
  • All-optical optical switching technology for all-optical communication and All-optical integrated circuits have great practical meaning.
  • Most current optical switches are implemented using nonlinear effects, such as in photonic crystal junctions. Non-linear materials are added on the basis of the structure, and the nonlinear effect requires the use of high-power control light, which is bound to consume a large amount of energy.
  • the energy consumption will become very large. This not only causes waste of energy, but also causes the operating temperature of the integrated circuit system to be too high.
  • the object of the present invention is to overcome the deficiencies of the prior art and to provide a MIM high sensitivity SPP optical switch that is easy to integrate.
  • the present invention adopts the following design:
  • the invention is based on a MIM high sensitivity SPP optical switch consisting of a rectangular cavity, a control light absorption cavity, a silver block, a vertical waveguide, a horizontal waveguide, three metal films, a terahertz control light and a horizontally propagated signal.
  • a light composition the rectangular cavity is located at a control light input end, the control light absorption cavity is connected to a vertical waveguide; the silver block is disposed in a vertical waveguide and is movable; the vertical waveguide is connected to the horizontal waveguide;
  • the terahertz control light is located at an upper end of the rectangular cavity;
  • the MIM is a metal-insulator-metal structure waveguide.
  • the substance in the rectangular cavity is a high transmittance substance.
  • the high transmittance material is silicon, germanium or gallium arsenide. .
  • control light absorption cavity is rectangular, circular, polygonal or elliptical.
  • the substance in the control light absorption chamber is a substance having a high coefficient of thermal expansion; the substance having a high expansion coefficient is alcohol or mercury.
  • the horizontal waveguide and the vertical waveguide are waveguides of an MIM structure that are in contact with the metal film at the lower end.
  • the metal is gold or silver
  • the metal is silver.
  • the insulator is a transparent substance; the insulator is air, silicon dioxide or silicon.
  • the optical switch has an operating wavelength of 759 nm to 800 nm, and the terahertz wave having a wavelength of 3 ⁇ m is controlled, and the extinction ratio is 10 db.
  • the moving silver block moves downward to a horizontal waveguide distance of 70 nm to be a conduction state of the switch, and the moving silver block moves upward to a horizontal waveguide distance of 100 nm to be an open state of the switch.
  • the invention has the following advantages:
  • the power of the terahertz wave controlling the optical switch is on the order of nW, the optical switching time is on the order of microseconds, and the switching extinction ratio is 10 dB.
  • the optical switch has a function of being turned on and off to facilitate integration.
  • FIG. 1 is a schematic view showing a two-dimensional structure of a first embodiment of an optical switch according to the present invention.
  • Rectangular cavity 1 Control light absorption cavity 2
  • Silver block 3 Vertical waveguide 4
  • Horizontal waveguide 5 Metal mold 6
  • Metal mold 7 Metal mold 8 Terahertz control light 100
  • FIG. 2 is a schematic view of the three-dimensional structure shown in FIG. 1.
  • FIG 3 is a schematic view showing a two-dimensional structure of a second embodiment of the optical switch of the present invention.
  • Figure 4 is a schematic view of the structure shown in Figure 3.
  • FIG. 5 is a schematic view showing the two-dimensional structure of a third embodiment of the optical switch of the present invention.
  • Figure 6 is a schematic view of the three-dimensional structure shown in Figure 5.
  • FIG. 7 is a diagram showing a light field distribution of a switch according to Embodiment 1 of the present invention.
  • Figure 8 is a diagram showing the distribution of the switch-off light field in the first embodiment of the present invention.
  • Fig. 9 is a view showing a light field distribution of a switch in accordance with a second embodiment of the present invention.
  • Figure 10 is a diagram showing the distribution of the light-off field of the switch according to the second embodiment of the present invention.
  • Figure 11 is a diagram showing the light field distribution of the switch conduction according to Embodiment 3 of the present invention.
  • Figure 12 is a diagram showing the distribution of the switch-off light field in the third embodiment of the present invention.
  • Figure 13 is a diagram showing the light field distribution of the switch conduction according to Embodiment 4 of the present invention.
  • Figure 14 is a diagram showing the distribution of the switch-off light field in the fourth embodiment of the present invention.
  • Figure 15 is a diagram showing the light field distribution of the switch conduction according to Embodiment 5 of the present invention.
  • Figure 16 is a diagram showing the distribution of a switch-off light field according to Embodiment 5 of the present invention.
  • Figure 17 is a diagram showing the light field distribution of the switch conduction according to Embodiment 6 of the present invention.
  • Figure 18 is a diagram showing the distribution of the light-off field of the switch according to Embodiment 6 of the present invention.
  • Figure 19 is a diagram showing the light field distribution of the switch conduction according to Embodiment 7 of the present invention.
  • Figure 20 is a diagram showing the distribution of the switch-off light field in the seventh embodiment of the present invention.
  • Figure 21 is a diagram showing the light field distribution of the switch in the embodiment 8 of the present invention.
  • Figure 22 is a diagram showing the distribution of the switch-off light field in the eighth embodiment of the present invention.
  • Figure 23 is a diagram showing the light field distribution of the switch in the embodiment of the present invention.
  • Figure 24 is a diagram showing the distribution of the light-off field of the switch according to Embodiment 9 of the present invention.
  • the MIM high-sensitivity SPP optical switch of the present invention comprises a rectangular cavity 1, a control light absorption cavity 2, a silver block 3, and a vertical waveguide 4.
  • the rectangular cavity 1 is located at the control light input end, the rectangular cavity 1 has a width l of 175 nm, The range is 150nm-300nm; the absorption cavity 2 is a control light absorption cavity, and the control light absorption cavity 2 is connected with the vertical waveguide 4, and the length h of the control light absorption cavity 2 is 1000 nm, and the value ranges from 800 nm to 1500 nm;
  • the waveguide 4 is connected to the horizontal waveguide 5, the horizontal waveguide 5 and the vertical waveguide 4 are waveguides of the MIM structure, the waveguide of the MIM structure is a metal-insulator-metal structure; the vertical waveguide 4 is located at the upper end of the horizontal waveguide 5;
  • the medium is air, the width d of the horizontal waveguide 5 is 50 nm, and the value ranges from 30 nm to 100 nm, and the distance
  • length M is 250 nm, and its value ranges from 200 nm or more.
  • the distance a from the right edge of the vertical waveguide 4 to the left edge of the metal film 7 is 400 nm; the value ranges from 350 nm to 450 nm; and the moving silver block 3 is disposed at The vertical waveguide 4 is movable and movable.
  • the length m of the moving silver block 3 is 125 nm, and the value ranges from 80 nm to 150 nm.
  • the distance between the moving silver block 3 and the horizontal waveguide 5 is s, and the value ranges from 0 nm to 150 nm.
  • the terahertz control light 100 is located at the upper end of the rectangular cavity 1, and the control light direction is parallel to the vertical waveguide axis and perpendicular to the horizontal waveguide axis, or parallel to the horizontal waveguide axis and perpendicular to the vertical waveguide axis Or perpendicular to the vertical waveguide axis and perpendicular to the horizontal waveguide axis;
  • the shape of the control light absorption cavity 2 is a rectangular cavity having an area of 502655 nm 2 , and the substance in the control light absorption cavity 2 has a high absorption coefficient for the control light and is high.
  • the coefficient of thermal expansion material is alcohol
  • the alcohol in the light absorbing chamber 2 is heated and controlled by controlling the light to cause the expansion to push the moving silver block 3 to move toward the horizontal waveguide 5 to change the air segment in the vertical waveguide 4. Degree, thereby changing the light transmissivity signal, and ultimately the optical switch.
  • the absorption coefficient and expansion coefficient of alcohol to 3 ⁇ m terahertz wave it can be calculated how long and how much power the terahertz wave is in; after the corresponding time of the control light is passed, the volume of the alcohol will expand, and then the mobile silver will be pushed.
  • the switch When the block 3 is moved outward to be shorter than the horizontal waveguide 5, the switch is in an on state, and after the control light is stopped, the alcohol cooling volume is reduced, and under the action of the external atmospheric pressure, the moving silver block 3 is returned again. The position of the initial pressure balance, at which point the switch is again in the open state.
  • the MIM high-sensitivity SPP optical switch of the present invention comprises a rectangular cavity 1, a control light absorption cavity 2, a silver block 3, and a vertical waveguide 4.
  • the rectangular cavity 1 is located at the control light input end, the width l of the rectangular cavity 1 is 175 nm, The range is 150nm-300nm; the absorption cavity 2 is a control light absorption cavity, and the control light absorption cavity 2 is connected with the vertical waveguide 4, and the length h of the control light absorption cavity 2 is 1000nm, and the value ranges from 800nm to 1500nm.
  • the straight waveguide 4 and the horizontal waveguide 5 are connected, the horizontal waveguide 5 and the vertical waveguide 4 are waveguides of the MIM structure, the waveguide of the MIM structure is a metal-insulator-metal structure, the vertical waveguide 4 is located at the upper end of the horizontal waveguide 5; the horizontal waveguide 5
  • the medium inside is air, the width d of the horizontal waveguide 5 is 50 nm, and the value ranges from 30 nm to 100 nm, and the distance between the lower edge of the horizontal waveguide 5 and the edge of the metal film 6 is c, which is greater than 150 nm; the vertical waveguide
  • the width b of 4 is 35 nm, and its value ranges from 30 nm.
  • length M is 250nm, and its value ranges from 200nm or more; right edge of vertical waveguide 4
  • the distance a from the left edge of the metal film 7 is 400 nm, and the value ranges from 350 nm to 450 nm.
  • the moving silver block 3 is disposed in the vertical waveguide 4 and can be moved.
  • the length m of the moving silver block 3 is 125 nm, and the value ranges from 80 nm to 150 nm; the distance of the moving silver block 3 from the horizontal waveguide 5 is s, and the value thereof is The range is 0 nm to 150 nm and is determined by the position of the moving silver block 3; the terahertz control light 100 is located at the upper end of the rectangular cavity 1, and the control light direction is parallel to the vertical waveguide axis and perpendicular to the horizontal waveguide axis, or parallel to the horizontal waveguide axis and It is perpendicular to the vertical waveguide axis, or perpendicular to the vertical waveguide axis and perpendicular to the horizontal waveguide axis; the shape of the control light absorption cavity 2 is a circular cavity having a radius R, and the substance in the control light absorption cavity 2 is controlled to have high absorption.
  • the coefficient is a material having a high coefficient of thermal expansion
  • the substance having a high coefficient of expansion is alcohol
  • the alcohol in the light absorbing chamber 2 is heated and controlled by the control light to cause the expansion to push the moving silver block 3 to move toward the horizontal waveguide 5 to change the vertical waveguide 4
  • the length of the inner air segment thereby changing the transmittance of the signal light, ultimately achieves optical switching.
  • the absorption coefficient and expansion coefficient of alcohol to 3 ⁇ m terahertz wave it can be calculated how long and how much power the terahertz wave is in; after the corresponding time of the control light is passed, the volume of the alcohol will expand, and then the mobile silver will be pushed.
  • the switch When the block 3 is moved outward to be shorter than the horizontal waveguide 5, the switch is in an on state, and after the control light is stopped, the alcohol cooling volume is reduced, and under the action of the external atmospheric pressure, the moving silver block 3 is returned again. The position of the initial pressure balance, at which point the switch is again in the open state.
  • the MIM high-sensitivity SPP optical switch of the present invention comprises a rectangular cavity 1, a control light absorption cavity 2, a silver block 3, and a vertical waveguide 4.
  • a horizontal waveguide 5, a terahertz control light 100 and a horizontally propagated signal light 200 surface plasmon, ie SPP
  • rectangular cavity 1 is located at the control light input end, the width l of the rectangular cavity 1 is 175nm, and the range is 150nm-300nm;
  • the control light absorption cavity 2 is connected with the vertical waveguide, and the length h of the control light absorption cavity 2 is 1000nm, value
  • the range is from 800 nm to 1500 nm
  • the vertical waveguide 4 is connected to the horizontal waveguide 5, the horizontal waveguide 5 and the vertical waveguide 4 are waveguides of the MIM structure, the MIM is a metal-insulator-metal structure waveguide, and the vertical waveguide 4 is located in the horizontal waveguide 5
  • the upper end; the medium in the horizontal waveguide 5 is air, the width d of the horizontal waveguide 5 is 50 nm, and the value ranges from 30 nm to 100 nm; the distance from the lower edge of the horizontal wave
  • the distance a is 400 nm; and its value ranges from 350 nm to 450 nm.
  • the moving silver block 3 is disposed in the vertical waveguide 4 and can be moved.
  • the length m of the moving silver block 3 is 125 nm, and the value ranges from 80 nm to 150 nm.
  • the distance between the moving silver block 3 and the horizontal waveguide 5 is s, and the value range thereof is 0 nm to 150 nm, and determined by the position of the moving silver block 3; the terahertz control light 100 is located at the upper end of the rectangular cavity 1, and the control light direction is parallel to the vertical waveguide axis and perpendicular to the horizontal waveguide axis, or parallel to the horizontal waveguide axis and perpendicular.
  • the shape of the control light absorption cavity 2 adopts a regular hexagonal cavity whose side length is r, and the substance in the control light absorption cavity 2 is controlled light.
  • the material having a high coefficient of expansion is alcohol, and the alcohol in the light absorbing chamber 2 is heated and controlled by the control light to cause the expansion to push the moving silver block 3 to move toward the horizontal waveguide 5 to change the vertical.
  • terahertz wave can be calculated How long is the power and how much power is applied; after the corresponding time of the control light is passed, the volume of the alcohol expands, and then the moving silver block 3 is moved outward to become shorter than the horizontal waveguide 5, and the switch is in an on state. After the control light is stopped, the volume of the alcohol cooling will be reduced. Under the action of the external atmospheric pressure, the moving silver block 3 will return to the initial pressure balance position, and the switch is in the off state at this time.
  • the extinction ratio of the optical switch refers to the ratio of the output optical power in the two states of the switch.
  • the specific formula is as follows:
  • the absorption of terahertz waves by alcohol follows Beer-lambert's law.
  • the absorption coefficient is defined as follows: a monochromatic laser with intensity I 0 and frequency ⁇ , after passing through an absorption medium of length l, the intensity at the exit end is I.
  • k is defined as the absorption coefficient.
  • the formula shows that the absorption of terahertz wave energy by the alcohol solution is related to the length of light in the alcohol medium. In order to allow the energy of the terahertz wave to be absorbed by the alcohol as much as possible, it is necessary to increase the wave.
  • the irradiation distance in the alcohol finally determines the incident end of the terahertz wave at the upper end of the rectangular cavity 1.
  • the alcohol absorbs the energy of the terahertz wave, the temperature rises and the volume becomes larger, and then the silver block 3 is pushed to move.
  • the optical switch has an operating wavelength of 759 nm to 800 nm, a terahertz wave having a wavelength of 3 ⁇ m, and an extinction ratio of 10 dB.
  • the moving silver block 3 is moved downward to obtain a horizontal waveguide 5 distance becoming the first state of the switch, that is, In the on state, moving the silver block 3 upwards It obtains the second state in which the horizontal waveguide 5 becomes longer and becomes the switch, that is, the off state.
  • the conduction and disconnection of the switch is realized by controlling the absorption of the terahertz wave by the substance in the light absorption cavity 2, and then the expansion of the heating volume, pushing the moving silver block 3 to move, and finally changing the transmittance of the signal light in the horizontal waveguide 5.
  • the time of the switch is the sum of the heat absorption time of the substance in the absorption chamber 2 and the time taken to move the silver block 3 to the designated position. Since the two are almost synchronous, the switching time can be set as the time during which the endothermic substance absorbs heat.
  • the power of the control light is inversely proportional to the switching time.
  • the control optical power is 1 nW and the switching time is 1.82 ⁇ s.
  • the incident light has a wavelength of 759 nm.
  • the numerical simulation is performed using the two-dimensional structure.
  • the numerical simulation results are shown in Figures 7 and 8, which are the light field distribution diagrams of the SPP switch in the on and off states.
  • the switch is in an open state, and when the moving silver block 3 is 90 nm from the horizontal waveguide 5, the switch is in a closed state; from the simulation results, the switching effect is better.
  • the incident light has a wavelength of 759 nm.
  • the numerical simulation is performed using the two-dimensional structure.
  • the numerical simulation results are shown in Figures 9 and 10, which are the light field distribution diagrams of the SPP switch in the on and off states.
  • the switch is in an open state, and when the moving silver block 3 is 90 nm from the horizontal waveguide 5, the switch is in a closed state; from the simulation results, the switching effect is better.
  • the incident light has a wavelength of 759 nm.
  • the numerical simulation results are shown in Figures 11 and 12, namely the SPP switch guide. Pass and off state light field distribution map.
  • the switch When the moving silver block 3 is 60 nm from the horizontal waveguide 5, the switch is in an open state, and when the moving silver block 3 is 90 nm from the horizontal waveguide 5, the switch is in a closed state; from the simulation results, the switch has no absorption chamber which is circular and The rectangular cavity works well.
  • the incident light has a wavelength of 780 nm.
  • the numerical simulation results are performed using two-dimensional structures.
  • the numerical simulation results are shown in Figures 13 and 14, which are the light field distribution diagrams of the SPP switch in the on and off states.
  • the switch is in an open state, and when the moving silver block 3 is 100 nm from the horizontal waveguide 5, the switch is in a closed state; from the simulation results, the switching effect is better.
  • the incident light has a wavelength of 780 nm.
  • the numerical simulation is performed using two-dimensional structure.
  • the numerical simulation results are shown in Figures 15 and 16, which are the light field distribution diagrams of the SPP switch in the on and off states.
  • the switch is in an open state, and when the moving silver block 3 is 100 nm from the horizontal waveguide 5, the switch is in a closed state; from the simulation results, the switching effect is better.
  • the incident light has a wavelength of 780 nm.
  • the numerical simulation is performed using two-dimensional structure.
  • the numerical simulation results are shown in Figures 17 and 18, which are the light field distribution diagrams of the SPP switch in the on and off states.
  • the switch When the moving silver block 3 is 70 nm away from the horizontal waveguide 5, the switch is in an open state, and when the moving silver block 3 is 100 nm from the horizontal waveguide 5, the switch is in a closed state; from the simulation results, the switch has no absorption chamber which is circular and Rectangular cavity effect Good.
  • the incident light has a wavelength of 800 nm.
  • the numerical simulation is performed using a two-dimensional structure.
  • the numerical simulation results are shown in Figures 19 and 20, which are the light field distribution diagrams of the SPP switch in the on and off states.
  • the switch is in an open state, and when the moving silver block 3 is 110 nm from the horizontal waveguide 5, the switch is in a closed state; from the simulation results, the switching effect is better.
  • the incident light has a wavelength of 800 nm.
  • the numerical simulation is performed using two-dimensional structure.
  • the numerical simulation results are shown in Figures 21 and 22, which are the light field distribution diagrams of the SPP switch in the on and off states.
  • the switch is in an open state, and when the moving silver block 3 is 110 nm from the horizontal waveguide 5, the switch is in a closed state; from the simulation results, the switching effect is better.
  • the incident light has a wavelength of 800 nm.
  • the numerical simulation is performed using a two-dimensional structure.
  • the numerical simulation results are shown in Figures 23 and 24, which are the light field distribution diagrams of the SPP switch in the on and off states.
  • the switch When the moving silver block 3 is 80 nm from the horizontal waveguide 5, the switch is in an open state, and when the moving silver block 3 is 110 nm from the horizontal waveguide 5, the switch is in a closed state; from the simulation results, the switch has no absorption chamber which is circular and The rectangular cavity works well.

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Abstract

一种基于MIM高灵敏度SPP光开关，它由一个矩形腔（1）、一个控制光吸收腔（2）、银块（3）、一个竖直波导（4）、一个水平波导（5）、三个金属膜（7）、一个太赫兹控制光（100）和一个水平传播的信号光（200）组成；所述矩形腔（1）位于控制光输入端，所述控制光吸收腔（2）和竖直波导（4）相连接；所述银块（3）设置竖直波导（4）内，可以移动；所述竖直波导（4）和水平波导（5）相连接；所述太赫兹控制光（100）位于矩形腔（1）的上端；所述MIM为金属-绝缘体-金属结构的波导。所述光开关结构紧凑，体积小，灵敏度高，便于集成，具有导通，断开的功能，其消光比达到10dB。

Description

基于MIM高灵敏度SPP温度光开关 技术领域
本发明涉及一种高消光比，纳米尺度的光开关，更具体地说涉及一种基于导体-绝缘体-导体(MIM)结构的高灵敏度SPP光开关。
背景技术
近年来，随着信息时代的到来，通信技术的速度和信息量急剧增大。光通信技术给信息化时代插上了翅膀，但目前在节点和路由的信息处理依旧需要电路实现，这在速度、容量和功率消耗方面制约了通讯技术的发展。采用光子集成光路代替或部分代替集成电路实现通信路由势必成为未来的发展方向。
基于表面等离子激元(SPP)的波导却能突破衍射极限的限制，实现纳米尺度的光信息处理和传输。表面等离子激元(SPP)是当电磁波入射到金属与介质分界面时，电磁波和金属表面的自由电子耦合形成的一种在金属表面传播的近场电磁波。根据表面等离子激元(SPP)的性质，人们已经提出了很多基于表面等离子体结构的器件，例如滤波器、环形器、逻辑门、光开关等。这些器件在结构上都比较简单，非常便于光路集成。
在大型光通信网络中，网络之间需要光交叉连接器和光交叉复用器来满足信息的交换，而这些器件都是由光开关阵列组成的，显然研究全光光开关技术对于全光通信和全光集成电路都会有很大的现实意思。目前的光开关多数利用非线性效应来实现，例如在光子晶体结 构的基础上加入非线性材料，而非线性效应需要使用高功率的控制光，这势必消耗大量的能量，在系统的集成度高，通信用户数量庞大时，该能量消耗将变得非常巨大，这样不仅造成能量的浪费，而且会使集成电路系统的工作温度过高。
发明内容
本发明的目的是克服现有技术的不足，提供一种便于集成的MIM高灵敏度SPP光开关。
为了实现上述目的，本发明采取以下设计方案：
本发明基于MIM高灵敏度SPP光开关，它由一个矩形腔、一个控制光吸收腔、银块、一个竖直波导、一个水平波导、三个金属膜、一个太赫兹控制光和一个水平传播的信号光组成；所述矩形腔位于控制光输入端，所述控制光吸收腔和竖直波导相连接；所述银块设置竖直波导内，可以移动；所述竖直波导和水平波导相连接；所述太赫兹控制光位于矩形腔的上端；所述MIM为金属-绝缘体-金属结构的波导。
所述矩形腔内的物质为高透射率的物质。
所述高透射率的物质为硅、锗或者砷化镓。。
所述控制光吸收腔的形状为矩形、圆形、多边形或者椭圆形。
所述控制光吸收腔内的物质为高热膨胀系数的物质；所述高膨胀系数的物质为酒精或者水银。
所述水平波导和竖直波导为MIM结构的波导，其与下端的金属膜接触。
所述金属为金或银；
所述金属为银。
所述绝缘体为透明物质；所述绝缘体为空气、二氧化硅或者硅。
所述光开关的工作波长为759nm～800nm，所述控制光波长为3μm的太赫兹波，消光比为10db。
所述移动银块往下移动到水平波导距离70nm为开关的导通状态，所述移动银块往上移动到水平波导距离100nm为开关的断开状态。
本发明与现有技术相比，有如下优点：
(1)结构紧凑，体积小，灵敏度高。
(2)控制光开关的太赫兹波的功率在nW量级，光开关时间在微秒量级，开关消光比达到10dB。
(3)光开关具有导通，断开的功能，便于集成。
附图说明
图1为本发明光开关第一种实施例二维结构示意图。
图中：矩形腔1 控制光吸收腔2 银块3 竖直波导4 水平波导5 金属模6 金属模7 金属模8 太赫兹控制光100 水平传播的信号光200
图2为图1所示三维结构示意图。
图3为本发明光开关第二种实施例二维结构示意图。
图4为图3所示结构示意图。
图5为本发明光开关第三种实施例二维结构示意图。
图6为图5所示三维结构示意图。
图7为本发明实施例1的开关导通光场分布图。
图8为本发明实施例1的开关断开光场分布图。
图9为本发明实施例2的开关导通光场分布图。
图10为本发明实施例2的开关断开光场分布图。
图11为本发明实施例3的开关导通光场分布图。
图12为本发明实施例3的开关断开光场分布图。
图13为本发明实施例4的开关导通光场分布图。
图14为本发明实施例4的开关断开光场分布图。
图15为本发明实施例5的开关导通光场分布图。
图16为本发明实施例5的开关断开光场分布图。
图17为本发明实施例6的开关导通光场分布图。
图18为本发明实施例6的开关断开光场分布图。
图19为本发明实施例7的开关导通光场分布图。
图20为本发明实施例7的开关断开光场分布图。
图21为本发明实施例8的开关导通光场分布图。
图22为本发明实施例8的开关断开光场分布图。
图23为本发明实施例9的开关导通光场分布图。
图24为本发明实施例9的开关断开光场分布图。
下面结合附图与具体实施方式对本发明作进一步的描述。
图1和图2中(图2中省略了结构上面的封装介质)，本发明MIM高灵敏度SPP光开关由一个矩形腔1、一个控制光吸收腔2、银块3、 一个竖直波导4、一个水平波导5、一个太赫兹控制光100和一个水平传播的信号光200(表面等离子激元,即SPP)组成，矩形腔1位于控制光输入端，该矩形腔1的宽度l为175nm，其范围为150nm-300nm；吸收腔2为控制光吸收腔，该控制光吸收腔2和竖直波导4相连接，控制光吸收腔2的长度h为1000nm，取值范围为800nm-1500nm；竖直波导4和水平波导5相连接，水平波导5和竖直波导4为MIM结构的波导，MIM结构的波导为金属-绝缘体-金属结构；竖直波导4位于水平波导5的上端；水平波导5内的介质为空气，水平波导5的宽度d为50nm，其取值范围为30nm～100nm，水平波导5的下边缘距离金属膜6边缘的距离为c，其取值范围大于150nm；竖直波导4的宽度b为35nm，其取值范围为30nm～60nm，长度M为250nm，其取值范围为200nm以上，竖直波导4的右边缘距离金属膜7左边缘的距离a为400nm；，其取值范围为350nm～450nm；移动银块3设置于竖直波导4内，且可以移动，移动银块3的长度m为125nm，其取值范围为80nm～150nm，移动银块3距离水平波导5的距离为s，其取值范围为0nm～150nm，且由移动银块3的位置确定；太赫兹控制光100位于矩形腔1的上端，控制光方向平行于垂直波导轴且垂直于水平波导轴，或平行于水平波导轴且垂直于垂直波导轴，或垂直于垂直波导轴且垂直于水平波导轴；控制光吸收腔2的形状为矩形腔，其面积为502655nm2，控制光吸收腔2内的物质为控制光具有高吸收系数，且为高热膨胀系数物质，高膨胀系数的物质采用酒精，通过控制光来加热控制光吸收腔2内的酒精，使其 膨胀推动移动银块3向水平波导5移动来改变竖直波导4内空气段的长度，从而改变信号光的透射率，最终实现光开关。根据酒精对3μm太赫兹波的吸收系数和膨胀系数，可以计算出太赫兹波在通入多长时间和多大的功率；在通入控制光相应时间后，酒精体积就会膨胀，进而推动移动银块3向外移动到距离水平波导5变短时，开关处于导通状态，停止通入控制光后，使得酒精冷却体积会减小，在外界大气压的作用下，移动银块3又会回到初始压力平衡的位置，此时开关又处于断开状态。
如图3和4所示(图4中省略了结构上面的封装介质)，本发明MIM高灵敏度SPP光开关由一个矩形腔1、一个控制光吸收腔2、银块3、一个竖直波导4、一个水平波导5、一个太赫兹控制光100和一个水平传播的信号光200(表面等离子激元,即SPP)组成，矩形腔1位于控制光输入端，该矩形腔1的宽度l为175nm，其范围为150nm-300nm；吸收腔2为控制光吸收腔，该控制光吸收腔2和竖直波导4相连接，控制光吸收腔2的长度h为1000nm，取值范围为800nm-1500nm，竖直波导4和水平波导5相连接，水平波导5和竖直波导4为MIM结构的波导，MIM结构的波导为金属-绝缘体-金属结构，竖直波导4位于水平波导5的上端；水平波导5内的介质为空气，水平波导5的宽度d为50nm，其取值范围为30nm～100nm，水平波导5的下边缘距离金属膜6边缘的距离为c，其取值范围大于150nm；竖直波导4的宽度b为35nm，其取值范围为30nm～60nm，长度M为250nm，其取值范围为200nm以上；竖直波导4的右边缘 距离金属膜7左边缘的距离a为400nm，其取值范围为350nm～450nm。移动银块3设置于竖直波导4内，可以移动，移动银块3的长度m为125nm，其取值范围为80nm～150nm；移动银块3距离水平波导5的距离为s，其取值范围为0nm～150nm，且由移动银块3的位置确定；太赫兹控制光100位于矩形腔1的上端，控制光方向平行于垂直波导轴且垂直于水平波导轴，或平行于水平波导轴且垂直于垂直波导轴，或垂直于垂直波导轴且垂直于水平波导轴；控制光吸收腔2的形状采用圆形腔，其半径为R，控制光吸收腔2内的物质为控制光具有高吸收系数，且为高热膨胀系数物质，高膨胀系数的物质采用酒精，通过控制光来加热控制光吸收腔2内的酒精，使其膨胀推动移动银块3向水平波导5移动来改变竖直波导4内空气段的长度，从而改变信号光的透射率，最终实现光开关。根据酒精对3μm太赫兹波的吸收系数和膨胀系数，可以计算出太赫兹波在通入多长时间和多大的功率；在通入控制光相应时间后，酒精体积就会膨胀，进而推动移动银块3向外移动到距离水平波导5变短时，开关处于导通状态，停止通入控制光后，使得酒精冷却体积会减小，在外界大气压的作用下，移动银块3又会回到初始压力平衡的位置，此时开关又处于断开状态。
如图5和6所示(图6中省略了结构上面的封装介质)，本发明MIM高灵敏度SPP光开关由一个矩形腔1、一个控制光吸收腔2、银块3、一个竖直波导4、一个水平波导5、一个太赫兹控制光100和一个水平传播的信号光200(表面等离子激元,即SPP)组成，矩形腔 1位于控制光输入端，该矩形腔1的宽度l为175nm，其范围为150nm-300nm；，控制光吸收腔2和竖直波导相连接，控制光吸收腔2的长度h为1000nm，取值范围为800nm-1500nm，竖直波导4和水平波导5相连接，水平波导5和竖直波导4为MIM结构的波导，MIM为金属-绝缘体-金属结构的波导，竖直波导4位于水平波导5的上端；水平波导5内的介质为空气，水平波导5的宽度d为50nm，其取值范围为30nm～100nm；水平波导5的下边缘距离金属膜6边缘的距离为c，其取值范围大于150nm，；竖直波导4的宽度b为35nm，其取值范围为30nm～60nm，长度M为250nm，其取值范围为200nm以上；竖直波导4的右边缘距离金属膜7左边缘的距离a为400nm；，其取值范围为350nm～450nm。移动银块3设置竖直波导4内，可以移动，移动银块3的长度m为125nm，其取值范围为80nm～150nm；移动银块3距离水平波导5的距离为s，其取值范围为0nm～150nm，且由移动银块3的位置确定；太赫兹控制光100位于矩形腔1的上端，控制光方向平行于垂直波导轴且垂直于水平波导轴，或平行于水平波导轴且垂直于垂直波导轴，或垂直于垂直波导轴且垂直于水平波导轴；；控制光吸收腔2的形状采用正六边形腔，其边长为r，控制光吸收腔2内的物质为控制光具有高吸收系数，且为高热膨胀系数物质，高膨胀系数的物质采用酒精，通过控制光来加热控制光吸收腔2内的酒精，使其膨胀推动移动银块3向水平波导5移动来改变竖直波导4内空气段的长度，从而改变信号光的透射率，最终实现光开关。根据酒精对3μm太赫兹波的吸收系数和膨胀系数，可以计算出太赫兹波 在通入多长时间和多大的功率；在通入控制光相应时间后，酒精体积就会膨胀，进而推动移动银块3向外移动到距离水平波导5变短时，开关处于导通状态，停止通入控制光后，使得酒精冷却体积会减小，在外界大气压的作用下，移动银块3又会回到初始压力平衡的位置，此时开关又处于断开状态。
光开关的消光比是指开关两种状态下的输出光功率的比值，具体公式如下：
Ex＝10lg(Pon/Poff)
酒精对太赫兹波吸收遵循Beer-lambert定律，吸收系数的定义如下：强度为I0、频率为μ的单色激光，通过长度为l的吸收介质后，在出射端的光强为I，
I＝I0e-kl
则k就定义为吸收系数，公式可以看出酒精溶液对太赫兹波能量的吸收量与光在酒精介质中的长度有关，为了让太赫兹波的能量尽可能被酒精吸收，就必须增加波在酒精内的照射距离，最终确定太赫兹波的入射端在矩形腔1的上端。当太赫兹波入射到酒精区域，酒精吸收太赫兹波的能量，温度升高体积变大，然后推动银块3移动。
光开关的工作波长为759nm～800nm，控制光波长为3μm的太赫兹波，消光比为10dB；移动银块3往下移动使其得到水平波导5距离变短为开关的第一种状态，即导通状态，移动银块3往上移动使 其得到水平波导5距离变长为开关的第二种状态，即断开状态。开关的导通和断开是由控制光吸收腔2内的物质吸收太赫兹波后发热体积膨胀，推动移动银块3移动，最终改变水平波导5内信号光的透过率来实现的。开关的时间为吸收腔2内的物质吸热时间和移动银块3移动到指定位置所用的时间总和。由于两者几乎同步，则开关时间可以定为吸热物质吸热的时间。控制光的功率和开关时间是成反比的，在控制光功率为1nW，开关时间为1.82μs。
实施例1
本实施例中，入射光波长为759nm。采用图1、2所示的结构，利用二维结构数值验证，数值模拟结果如图7、8，即SPP开关导通和断开状态光场分布图。当移动银块3距离水平波导5为60nm时，开关为开启的状态，移动银块3距离水平波导5为90nm时，开关为闭合的状态；由模拟结果可知：开关效果比较好。
实施例2
本实施例中，入射光波长为759nm。采用图3、4所示的结构，利用二维结构数值验证，数值模拟结果如图9和10，即SPP开关导通和断开状态光场分布图。当移动银块3距离水平波导5为60nm时，开关为开启的状态，移动银块3距离水平波导5为90nm时，开关为闭合的状态；由模拟结果可知：开关效果比较好。
实施例3
本实施例中，入射光波长为759nm。采用图5、6所示的结构，利用二维结构数值验证，数值模拟结果如图11和12，即SPP开关导 通和断开状态光场分布图。当移动银块3距离水平波导5为60nm时，开关为开启的状态，移动银块3距离水平波导5为90nm时，开关为闭合的状态；由模拟结果可知：开关没有吸收腔为圆形和矩形腔效果好。
实施例4
本实施例中，入射光波长为780nm。采用图1、2所示的结构，利用二维结构数值验证，数值模拟结果如图13和14，即SPP开关导通和断开状态光场分布图。当移动银块3距离水平波导5为70nm时，开关为开启的状态，移动银块3距离水平波导5为100nm时，开关为闭合的状态；由模拟结果可知：开关效果比较好。
实施例5
本实施例中，入射光波长为780nm。采用图3、4所示的结构，利用二维结构数值验证，数值模拟结果如图15和16，即SPP开关导通和断开状态光场分布图。当移动银块3距离水平波导5为70nm时，开关为开启的状态，移动银块3距离水平波导5为100nm时，开关为闭合的状态；由模拟结果可知：开关效果比较好。
实施例6
本实施例中，入射光波长为780nm。采用图5、6所示的结构，利用二维结构数值验证，数值模拟结果如图17和18，即SPP开关导通和断开状态光场分布图。当移动银块3距离水平波导5为70nm时，开关为开启的状态，移动银块3距离水平波导5为100nm时，开关为闭合的状态；由模拟结果可知：开关没有吸收腔为圆形和矩形腔效 果好。
实施例7
本实施例中，入射光波长为800nm。采用图1、2所示的结构，利用二维结构数值验证，数值模拟结果如图19和20，即SPP开关导通和断开状态光场分布图。当移动银块3距离水平波导5为80nm时，开关为开启的状态，移动银块3距离水平波导5为110nm时，开关为闭合的状态；由模拟结果可知：开关效果比较好。
实施例8
本实施例中，入射光波长为800nm。采用图3、4所示的结构，利用二维结构数值验证，数值模拟结果如图21和22，即SPP开关导通和断开状态光场分布图。当移动银块3距离水平波导5为80nm时，开关为开启的状态，移动银块3距离水平波导5为110nm时，开关为闭合的状态；由模拟结果可知：开关效果比较好。
实施例9
本实施例中，入射光波长为800nm。采用图5、6所示的结构，利用二维结构数值验证，数值模拟结果如图23和24，即SPP开关导通和断开状态光场分布图。当移动银块3距离水平波导5为80nm时，开关为开启的状态，移动银块3距离水平波导5为110nm时，开关为闭合的状态；由模拟结果可知：开关没有吸收腔为圆形和矩形腔效果好。
以上之详细描述仅为清楚理解本发明，而不应将其看作是对本发明不必要的限制，因此对本发明的任何改动对本领域中的技术熟练的 人是显而易见的。

Claims (10)

  1. 一种基于MIM高灵敏度SPP光开关，其特征在于：它由一个矩形腔、一个控制光吸收腔、银块、一个竖直波导、一个水平波导、三个金属膜、一个太赫兹控制光和一个水平传播的信号光组成；所述矩形腔位于控制光输入端，所述控制光吸收腔和竖直波导相连接；；所述银块设置竖直波导内，可以移动；所述竖直波导和水平波导相连接；所述太赫兹控制光位于矩形腔的上端；所述MIM为金属-绝缘体-金属结构的波导。
  2. 按照权利要求1所述的基于MIM高灵敏度SPP光开关，其特征在于：所述矩形腔内的物质为高透射率的物质。
  3. 按照权利要求2所述的基于MIM高灵敏度SPP光开关，其特征在于：所述高透射率的物质为硅、锗或者砷化镓。
  4. 按照权利要求1所述的基于MIM高灵敏度SPP光开关，其特征在于：所述吸收腔的形状为矩形、圆形、多边形、椭圆形、矩形与圆形的组合、矩形与多边形的组合、矩形与椭圆形的组合、圆形与多边形的组合、圆形与椭圆形的组合、多边形与椭圆形的组合或者这些形状的变形。
  5. 按照权利要求1所述的基于MIM高灵敏度SPP光开关，其特征在于：所述吸收腔内的物质为高膨胀系数的物质；所述高膨胀系数的物质为酒精或者水银。
  6. 按照权利要求5所述的基于MIM高灵敏度SPP光开关，其特征在于：所述水平波导和竖直波导为MIM结构的波导。
  7. 按照权利要求1所述的基于MIM高灵敏度SPP光开关，其特 征在于：所述金属为金或者银。
  8. 按照权利要求7所述的基于MIM高灵敏度SPP光开关，其特征在于：所述金属为银。
  9. 按照权利要求10所述的基于MIM高灵敏度SPP光开关，其特征在于：所述绝缘体为透明物质；所述透明物质为空气、二氧化硅或者硅。
  10. 按照权利要求1所述的基于MIM的高灵敏度SPP光开关，所述光开关的工作波长为759nm～800nm，所述控制光波长为3μm的太赫兹波，消光比为10db；所述可移动银块移动到水平波导的距离为70nm或100nm；所述移动银块往下移动到水平波导距离70nm为开关的导通状态，所述移动银块往上移动到水平波导距离100nm为开关的断开状态。
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