Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/185—Joining of semiconductor bodies for junction formation
  • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F10/00—Individual photovoltaic cells, e.g. solar cells
  • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
  • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
  • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
  • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F71/00—Manufacture or treatment of devices covered by this subclass
  • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
  • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/40—Optical elements or arrangements
  • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
  • H10F77/48—Back surface reflectors [BSR]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/93—Interconnections
  • H10F77/933—Interconnections for devices having potential barriers
  • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules

Definitions

• the present invention relates to an engineered substrate as well as a method of manufacturing an engineered substrate.
• Photovoltaic or solar cells are designed for converting the solar radiation to electrical current.
• the incoming sun light is optically concentrated before it is directed to solar cells.
• the incoming sun light is received by a primary mirror that reflects the received radiation toward a secondary mirror that, in turn, reflects the radiation toward a solar cell, which converts the concentrated radiation to electrical current by the generation of electron- hole pairs in lll-V semiconductor or single crystal silicon, for example.
• Concentrator photovoltaics may, alternatively or additionally, comprise Fresnel lens optics for the concentration of the incoming solar radiation.
• MJ (multijunction) cells have been proposed that comprise, for example, three cells showing optimal absorption in different wavelength ranges.
• WO2013143851 discloses a process of manufacturing MJ solar cell devices, in- eluding a transfer of a seed layer on a final substrate.
• MJ solar cells or more general « photodetectors » e.g. suitable for a fabrication method of the MJ solar cell as set forth in WO2013143851 that implies direct bonding of at least two subcells, i.e. each of which is grown on a substrate, however both substrates having different lattice constants, there is a need for proper substrates to increase efficiency of the solar cell based on such substrates.
• the present invention addresses the above-mentioned need and, accordingly, it is provided:
• An engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm-cm 2 , preferentially below 1 mOhnvcm 2 ; and wherein doping concentration of the base as well as the thickness of the engineered substrate are such that the absorption of the engineered substrate is less than 20%, preferentially less than 10%, and total area-normalized series resistance of the en- gineered substrate is less than 10 mOhm-cm 2 , preferentially less than 5 mOhm-cm 2 .
• the term base is short for base sub- strate and both terms are used synonymously.
• the base and the surface layer form the support substrate which may also be termed a support layer.
• the support substrate may also be termed a receiver substrate.
• the base corresponds to a low doped bottom part which is suitable for low absorption and providing at the same time sufficient mechanical stability for handling of the substrate.
• the top part of the support substrate corresponds to the surface layer.
• the surface layer is formed by epitaxial growth of a highly doped, i.e. heteroepitaxial, layer on the base layer. Thereby a low interfacial resistance with the seed layer can be guaranteed, e.g. InP seed layer on GaAs surface layer formed on base substrate of GaAs or Ge.
• the substrate is composed of two non- lattice matched materials, e.g. InP for the top thin layer, i.e. the seed layer, and GaAs or Ge for the bottom receiver substrate, i.e. the support substrate.
• the thin layer of seed layer of a first material can be obtained by several approaches including bonding on the second material, both of which are preferentially both highly doped at the bonding interface in order to ensure low interface resistivity.
• the absorption being less than 20% should be understood as the engineered substrate should only absorb less than 20 % of the incident light, whereas more than 80 % of the incident light should be transmitted through the engineered substrate.
• the electrical resistivity is an intrinsic property that quantifies how strongly a given material opposes the flow of electric current.
• a low resistivity indicates a material that readily allows the movement of electric charge.
• Resistivity is commonly represented by the Greek letter p (rho).
• the unit of electrical resistivity thus is ohm -metre ( ⁇ -m) although other units like ohm-centimetre ( ⁇ -cm) may derive from this.
• the series resistance represents one of the major resistive effects in a solar cell.
• a high series resistance may reduce the fill factor and thereby ultimately the efficiency of the solar cell.
• the values are area- normalized so as to multiply the resistance with an area, which is the same as using the current density instead of the current in Ohm's law, thereby obtaining a unit of Ohm -cm 2 .
• the engineered substrate may further comprise a back side metal contact serving as a mirror provided on a second side of the base opposite to the first side.
• the back side metal contact may serve as a back side mirror. Typically, it is placed right below the base in order to prevent or at least minimize losses of photons by reflecting them back towards the base and further at least partially to the active layers of the solar cell. Photons may thus be recycled by the mirror and the loss of photons is reduced.
• the above mentioned area-normalized series resistance of the engineered substrate has the further effect of providing electrical connection of the cell to the back side metal contact to collect the generated electrons.
• the back side metal contact is typically provided under the base, i.e. on a second side of the base opposite to the first side of the base. In other words, one side or one surface of the base has the surface layer provided on whereas the other free side or surface of the base may have the back side metal contact on.
• the predetermined value may typically be 10 18 at/cm 3 .
• the predetermined value of doping concentration of 10 18 atoms/cm 3 provides the interface having a low resistivity.
• the seed layer may also have a doping concentration higher than the predetermined value. Also for the seed layer the predetermined valued of doping concentration of 10 18 atoms/cm 3 provides for the interface having a low resistivity.
• the thickness of the seed layer and/or the surface layer may be in a range of 150 nm up to 1 ⁇ .
• the thickness of the base may range from 100 ⁇ up to 500 ⁇ and the doping concentration of the base may range from 1x10 14 - 5x10 17 at/cm 3 .
• the first semiconductor material may have a lattice constant in the range of 5.8 - 6 A (0.58 nm - 0.6 nm). These values typically correspond to the lattice constant of InP.
• the support substrate typically is the final substrate.
• the subcell grown on this substrate should have the lowest energy gaps, which is only possible to achieve with materials having lattice constants around the lattice constant of InP.
• the first semiconductor material may be InP or the first semiconductor material may be a ternary or quaternary or penternary lll-V material, for example InGaAs or InGaAsP, and the second semiconductor material may be GaAs or Ge.
• the invention further provides a solar cell comprising an engineered substrate as described above.
• the invention further provides a method of manufacturing an engineered substrate comprising the steps of providing a first substrate; providing a seed layer on the first substrate, the seed layer made of a first semiconductor material, providing a base; forming, by epitaxial growth, a surface layer on a first side of the base, the base and the surface layer made of a second semiconductor material; directly bonding the seed layer to the surface layer, thereby providing a direct bonding interface, and then removing the first substrate; wherein doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhnvcm 2 , preferentially below 1 mOhnvcm 2 ; and wherein doping concentration of the base as well as the thickness of the engineered substrate are such that both absorption of the engineered substrate is less than 20%, preferentially less than 10%, as well as total area- normalized series resistance of the engineered substrate is less than 10 mOhnvcm 2 , preferentially less than 5 mOhnv
• the engineered substrate as detailed above may be used for the manufacturing of CPV cells, MJ cells or any light detection devices.
• the method of manufacturing an engineered substrate may further comprise the step of providing a back side metal contact on a second side of the base opposite to the first side, serving as a mirror.
• the mirror may also be formed after formation of the MJ cell.
• the method of manufacturing an engineered substrate may further comprise an ion implantation step for creating an implantation layer in a part of the first substrate and/or the seed layer before directly bonding the seed layer to the surface layer.
• the back side mirror is arranged right below the base to prevent losses by reflect- ing photons back to the base and further towards the active layers of the solar cell.
• the base comprises a low doped bottom part suitable for low absorption, providing mechanical stability for handling, and electrical conductivity high enough to provide electrical connection of the cell to the back side metal contact for collecting the generated electrons. The latter serves as a mirror as pointed out previously.
• the top part of the receiver substrate is formed by epitaxial growth of a highly doped, i.e. heteroepitaxial layer necessary in order to guarantee a low interfacial resistance with the epitaxial seed layer, e.g. InP seed layer on GaAs top layer formed on bottom GaAs or Ge substrate.
• the engineered substrate disclosed can be used for the fabrication of CPV cells or any light detection devices.
• the engineered substrate is composed of two non lattice matched materials, e.g. InP for the top thin layer, and GaAs or Ge for the bottom receiver substrate.
• the thin layer of epitaxial seed layer of a first material can be obtained by several approaches including bonding on the second material, both of which need to be highly doped at the bonding interface in order to ensure low interface resistivity.
• FIG. 1 Schematic drawing of one embodiment
• FIG. 2 A modification of the embodiment shown in Fig. 1
• Fig. 1 shows an example of the method of manufacturing an engineered substrate according to the present invention.
• a base substrate 5, hereinafter referred to as base is provided. Furthermore, a first substrate 1 is provided.
• the first substrate 1 serves as an auxiliary substrate which however may be removed or sacrificed before the final engineered substrate is ready.
• a seed layer 3 is formed on the first substrate 1.
• the seed layer 3 may be of a first semiconductor material.
• the first semiconductor material may be, e.g. InP or it may be a ternary or quaternary or penternary lll-V material, for example InGaAs or InGaAsP.
• a surface layer 7 is formed on the base 5.
• the surface layer 7 is epitaxially grown on a first side of the base 5.
• the base 5 and the surface layer 7 are made of a second semiconductor material.
• the second semiconductor material is GaAs or Ge.
• the base 5 and surface layer 7 together form a support substrate 6. No correlation in time between forming the two parts or structures, i.e. the part comprising the seed layer formed on the first substrate and the part comprising the surface layer 7 being provided on the base 5 by epitaxial growth, is required, other that both are available at the beginning of the next step which is indicated by an arrow B.
• the two structures are bonded together. That is, the structure comprising the first substrate 1 and the seed layer 3 is bonded together with the second structure comprising the base 5 and the surface layer 7, i.e. the support substrate.
• the seed layer 3 and the surface layer 7 then form a direct bonding interface 9 between the seed layer 3 and the surface layer 7.
• the bonding is performed by direct bonding of the two structures. Direct bonding typically represents molecular adhesion between the two surfaces involved, without using any further bonding layers. Molecular adhesion is typically performed under partial vacuum.
• step C the first substrate 1 is removed / detached from the first substrate 1 , resulting in an engineered substrate 101.
• Removal of the first substrate may be performed in various ways. Notably, grinding and/or back etching may be used to remove the first substrate 1 , thereby eventually exposing the seed layer 3. If this treatment is chosen, the bonding process performed in the step before may be conducted at higher temperatures, e.g. temperatures in a range of 400° C - 600 0 C, or more preferably between 450° C - 550 0 C. Another possibility may be performing the transfer of the first structure onto the second structure prior to bonding by means of Smart CutTM, i.e.
• step D an additional back side metal contact 1 1 may be provided on a second side of the base 5 opposite to the first side, thereby resulting in an engineered substrate 103.
• the engineered substrate 103 may be substantially the same as the engineered substrate 101 , except for having the additional back side metal contact. Step D and thus providing the additional back side metal contact 1 1 are optional, but may further improve the efficiency of the engineered substrate 103, and ultimately a solar cell including the engineered substrate.
• the back side metal contact 1 1 may serve as a mirror, i.e. its purpose is to reflect such photons which have not yet been converted back towards the active layer of the solar cell.
• the back side metal contact 1 1 may also serve for providing an electrical contact to the backside of a solar cell, e.g. contacting a conductive plate in order to avoid complex wiring.
• the first base substrate comprises a zipper layer 2 which is provided at the surface of the first substrate 1 , representing the contact to the seed layer 3.
• the zipper layer 2 may be provided in form of a weakened layer formed by the implantation of ionic species.
• the ionic species may be, for example, hydrogen or helium ions.
• the first substrate 1 can be provided as a bulk substrate, such as an InP substrate, then the implantation through the top surface of the bulk substrate forms the weakened layer 2.
• the weakened layer or zipper layer 2 thus separates the seed layer 3 and the first substrate 1 respectively in the top portion and the bottom portion of the bulk substrate. Subsequently, the first substrate 1 is detached from the seed layer 3 by means of the zipper layer 2, for example, the first engineered substrate is cleaved at the zipper layer 2 allowing the detachment of first substrate 1 from the seed layer 3. Then the further process of detachment of the first substrate 1 may be mediated by the application of mechanical forces to delaminate at the weakened layer formed by hydrogen or helium ions.
• the resulting engineered substrate 101 and 103 are substantially the same as in Fig. 1.
• Interface resistivity between directly bonded InP and GaAs depends on the doping concentration and high doping concentrations are necessary to keep such resistivity low. High doping concentrations, however, for GaAs, also lead to strong absorption of light. Thus only the GaAs substrate should remain sufficiently transparent.
• doping concentration of the surface layer 7 is higher than a predetermined value such that the electrical resistivity at the direct bonding interface 9 is below 10 mOhnvcm 2 , preferentially below 1 mOhnvcm 2 .
• doping concentration of the base 5 as well as the thickness of the engineered substrate 101 , 103 are such that absorption of the engineered substrate 101 , 103 is less than 20%, preferentially less than 10%, and total area-normalized series resistance of the engineered substrate 101 , 103 is less than 10 mOhnvcm 2 , preferentially less than 5 mOhnvcm 2 .
• the predetermined value for doping concentration typically is 10 18 at/cm 3 .
• the seed layer 3 of the embodiments shown in Fig. 1 and 2 has a doping concentration higher than the predetermined value.
• the thickness of the seed layer 3 and/or the surface layer 7 typically is in a range of 150 nm up to 1 ⁇ .
• the thickness of the base 5 may range from 100 ⁇ up to 500 ⁇ .
• the doping concentration of the base 5 typically ranges from 1x10 14 - 5x10 17 at/cm 3 .
• the first semiconductor material typically has a lattice constant in the range of 5.8 - 6 A (0.58 nm - 0.6 nm).
• Each of the engineered substrate 101 and 103 may be used in forming an MJ solar cell.
• the advantage is that materials of the various junctions may be tuned in order to better match the solar spectrum.

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• 2016
  • 2016-02-03 FR FR1650861A patent/FR3047351B1/fr active Active
• 2017
  • 2017-02-01 CN CN201780009189.2A patent/CN108604537A/zh active Pending
  • 2017-02-01 WO PCT/EP2017/052080 patent/WO2017134064A1/en active Application Filing
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