FR3047351A1 - - Google Patents

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Publication number
FR3047351A1
FR3047351A1 FR1650861A FR1650861A FR3047351A1 FR 3047351 A1 FR3047351 A1 FR 3047351A1 FR 1650861 A FR1650861 A FR 1650861A FR 1650861 A FR1650861 A FR 1650861A FR 3047351 A1 FR3047351 A1 FR 3047351A1
Authority
FR
France
Prior art keywords
substrate
base
advanced
surface layer
mohm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR1650861A
Other languages
English (en)
French (fr)
Other versions
FR3047351B1 (fr
Inventor
Cecile Aulnette
Frank Dimroth
Eduard Oliva
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV, Soitec SA filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to FR1650861A priority Critical patent/FR3047351B1/fr
Priority to US16/074,348 priority patent/US11430910B2/en
Priority to PCT/EP2017/052080 priority patent/WO2017134064A1/en
Priority to EP17703365.1A priority patent/EP3411898B1/en
Priority to JP2018536807A priority patent/JP2019505991A/ja
Priority to CN201780009189.2A priority patent/CN108604537A/zh
Publication of FR3047351A1 publication Critical patent/FR3047351A1/fr
Application granted granted Critical
Publication of FR3047351B1 publication Critical patent/FR3047351B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/163—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1650861A 2016-02-03 2016-02-03 Substrat avance Active FR3047351B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1650861A FR3047351B1 (fr) 2016-02-03 2016-02-03 Substrat avance
US16/074,348 US11430910B2 (en) 2016-02-03 2017-02-01 Engineered substrate
PCT/EP2017/052080 WO2017134064A1 (en) 2016-02-03 2017-02-01 Engineered substrate
EP17703365.1A EP3411898B1 (en) 2016-02-03 2017-02-01 Engineered substrate
JP2018536807A JP2019505991A (ja) 2016-02-03 2017-02-01 加工基板
CN201780009189.2A CN108604537A (zh) 2016-02-03 2017-02-01 加工基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1650861A FR3047351B1 (fr) 2016-02-03 2016-02-03 Substrat avance

Publications (2)

Publication Number Publication Date
FR3047351A1 true FR3047351A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2017-08-04
FR3047351B1 FR3047351B1 (fr) 2023-07-14

Family

ID=56801617

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1650861A Active FR3047351B1 (fr) 2016-02-03 2016-02-03 Substrat avance

Country Status (6)

Country Link
US (1) US11430910B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP3411898B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP2019505991A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN108604537A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR3047351B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO2017134064A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115662881B (zh) * 2022-12-21 2023-03-17 青禾晶元(天津)半导体材料有限公司 一种复合碳化硅衬底及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2645429A1 (en) * 2012-03-28 2013-10-02 Soitec Manufacture of multijunction solar cell devices

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US4292461A (en) 1980-06-20 1981-09-29 International Business Machines Corporation Amorphous-crystalline tandem solar cell
JP2737705B2 (ja) 1995-06-26 1998-04-08 日立電線株式会社 太陽電池
DE102008027780A1 (de) * 2008-06-11 2009-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zu deren Herstellung
CN102473744B (zh) * 2009-07-20 2015-04-15 SOI Technology Co.,Ltd. 使用量子点结构制造半导体结构和器件的方法及相关结构
JP2011103356A (ja) 2009-11-10 2011-05-26 Mitsubishi Electric Corp 太陽電池セル電極形成ペースト、並びに太陽電池セルおよびその製造方法
US8822817B2 (en) * 2010-12-03 2014-09-02 The Boeing Company Direct wafer bonding
EP2645431A1 (en) * 2012-03-28 2013-10-02 Soltec Manufacture of multijuntion solar cell devices
FR3003692B1 (fr) * 2013-03-25 2015-04-10 Commissariat Energie Atomique Procede de fabrication d’une structure a multijonctions pour cellule photovoltaique
US9331227B2 (en) 2014-01-10 2016-05-03 The Boeing Company Directly bonded, lattice-mismatched semiconductor device
EP3161877B1 (en) * 2014-06-26 2022-01-19 Soitec Semiconductor structures including bonding layers, multijunction photovoltaic cells and related methods
CN104576776A (zh) * 2014-12-29 2015-04-29 瑞德兴阳新能源技术有限公司 选择性生长接触层的GaAs太阳能电池及其制备方法
CN104993005A (zh) * 2015-05-25 2015-10-21 中国电子科技集团公司第十八研究所 一种基于外延正向失配生长的多结GaAs薄膜太阳能电池

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2645429A1 (en) * 2012-03-28 2013-10-02 Soitec Manufacture of multijunction solar cell devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MELISSA J GRIGGS ET AL: "Design Approaches and Materials Processes for Ultrahigh Efficiency Lattice Mismatched Multi-Junction Solar Cells", CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (IEEE CAT. NO.06CH37747), IEEE, 1 May 2006 (2006-05-01), pages 857 - 860, XP031041755, ISBN: 978-1-4244-0016-4 *
SHARPS P R ET AL: "Wafer bonding for use in mechanically stacked multi-bandgap cells", CONFERENCE RECORD OF THE 26TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997. PVSC '97. ANAHEIM, CA, SEPT. 29 - OCT. 3, 1997; [IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE], NEW YORK, NY : IEEE, US, 29 September 1997 (1997-09-29), pages 895 - 898, XP010268023, ISBN: 978-0-7803-3767-1, DOI: 10.1109/PVSC.1997.654231 *

Also Published As

Publication number Publication date
EP3411898B1 (en) 2024-01-24
EP3411898A1 (en) 2018-12-12
WO2017134064A1 (en) 2017-08-10
FR3047351B1 (fr) 2023-07-14
CN108604537A (zh) 2018-09-28
US20190355867A1 (en) 2019-11-21
US11430910B2 (en) 2022-08-30
JP2019505991A (ja) 2019-02-28

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