WO2017134029A1 - Procédé de fabrication d'un composant optoélectronique et composant optoélectronique - Google Patents

Procédé de fabrication d'un composant optoélectronique et composant optoélectronique Download PDF

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Publication number
WO2017134029A1
WO2017134029A1 PCT/EP2017/051987 EP2017051987W WO2017134029A1 WO 2017134029 A1 WO2017134029 A1 WO 2017134029A1 EP 2017051987 W EP2017051987 W EP 2017051987W WO 2017134029 A1 WO2017134029 A1 WO 2017134029A1
Authority
WO
WIPO (PCT)
Prior art keywords
cavity
housing body
optoelectronic component
placeholder
placeholder structure
Prior art date
Application number
PCT/EP2017/051987
Other languages
German (de)
English (en)
Inventor
Stefan Schoemaker
Markus Boss
Tobias Gebuhr
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2017134029A1 publication Critical patent/WO2017134029A1/fr

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/005Processes relating to semiconductor body packages relating to encapsulations

Definitions

  • the present invention relates to a method for herstel ⁇ len an optoelectronic component and a optoelekt ⁇ ronisches component.
  • An object of the present invention is to provide a method for producing an optoelectronic component. Another object of the present invention is to provide an optoelectronic component calmzu ⁇ .
  • a method for producing an optoelectronic component comprises steps for providing a leadframe with a top area having a contact area, for arranging a placeholder structure at least partially delimiting the contact area from a first material at the top side of the leadframe, for forming a housing area. body of a second material, wherein the lead frame and the placeholder structure are at least partially embedded in the second material, wherein the housing body is formed with egg ⁇ ner cavity, the contact area and a portion of the placeholder structure in the region of the cavity uncovered by the second material remain and for Entfer ⁇ nen at least a portion of the dummy structure.
  • this method allows for the production-of an optoelectronic component with a housing ⁇ body with a cavity having an anchoring structure in the form of an undercut.
  • the undercut is formed, forming in the region of at least ei ⁇ nes by removing part of the dummy structure free space overall.
  • the anchoring structure may advantageously allow an effective and robust mechanical anchoring a Vergussma ⁇ terials in the cavity of the housing body of the available by the United ⁇ drive optoelectronic component.
  • this comprises a further step for arranging an optoelectronic semiconductor chip in the cavity. Due to the arrangement in the cavity of the housing body of the optoelectronic component of the optoelectronic semiconductor chip in the by this
  • the cavity may also advantageously serve as a reflector for collecting electromagnetic radiation emitted by the optoelectronic semiconductor chip in the case of the optoelectronic component obtainable by this method.
  • this comprises a further step for arranging a potting material in the cavity, wherein the potting material extends at least into a part of a free space created by the removal of the placeholder structure.
  • the potting material arranged in the cavity is mechanically anchored in the cavity by the part extending into the free space.
  • the Platzhal ⁇ ter MUST on the contact area annularly enclosing mesh.
  • the contact region annularly surrounding undercut is formed in the available by the procedural ⁇ ren optoelectronic component characterized that could allow a robust mechanical anchoring Ver ⁇ casting material in the cavity of the housing body of the optoelekt ⁇ tronic device.
  • the Platzhal ⁇ ter Vietnamese is prefabricated prior to placement on the top of the lead frame.
  • this allows a particularly cost-effective production of the placeholder structure and a particularly simple arrangement of the placeholder structure at the top of the lead frame.
  • the placeholder structure is arranged by two-dimensional application of the first material and a subsequent structuring of the first material.
  • a simp ⁇ che and inexpensive arrangement of the dummy structure at the top of the lead frame is possible.
  • the formation of the placeholder structure by injection molding, by a printing process, in particular by a screen printing method, by Nadeldosieren, by a spray process, by applying dry paint or by applying a preformed film.
  • these method steps can be combined in a favorable manner with the remaining method steps for producing the optoelectronic component.
  • the first material comprises an acrylate, a photoresist, polyoxymethylene, polyvinyl acetate, polyvinyl alcohol, a duroplastic or a wax or another binder.
  • these materials are suitable for the production of a temporary
  • Placeholder structure that can be removed after forming the body of the housing.
  • the second Ma ⁇ TERIAL comprises an epoxy, a polyphthalamide or a silicone.
  • these materials allow a simple and cost-effective design of the housing body and he ⁇ allow a subsequent removal of the temporary placeholder structure.
  • the removal is accomplished at least a portion of the dummy structure by Herauslö ⁇ sen by a chemical process, in particular by dissolution using an acid, a base or a complementary and ⁇ means of or by dissolving out by means of a physical process, in particular by evaporation or decomposition by a thermal process, by irradiation with light ei ⁇ ner fixed wavelength or by a mechanical Be ⁇ treatment, for example by means of ultrasound.
  • Advantageously ⁇ as allow all of these techniques, a simple, inexpensive and reliable removal of at least part of the dummy structure.
  • An optoelectronic component includes a GeHousekör ⁇ by having an at least partially embedded leadframe having.
  • the housing body has a cavity.
  • a contact region formed on an upper side of the leadframe is uncovered by the material of the housing body.
  • the housing body has in the region of the cavity to the contact region at least in sections to ⁇ current undercut.
  • this undercut allows a simple and reliable mecha ⁇ African anchoring of a arranged in the cavity of the housing body casting material.
  • the risk of unintentional detachment of a potting material arranged in the cavity is advantageously reduced in this opto ⁇ electronic component.
  • the undercut adjoins the leadframe.
  • this is a particularly reliable mechanical anchoring of a specific ⁇ allows in the cavity of the housing body at ⁇ parent potting material.
  • an optoelectronic semiconductor chip is arranged in the cavity.
  • the arrangement in the cavity advantageously reduces the risk of damage to the optoelectronic semiconductor chip due to external influences in this optoelectronic component.
  • a potting material is arranged in the cavity, which extends at least partially into the undercut.
  • Vergussma ⁇ TERIAL in this optoelectronic component is thereby mechanically anchored in the cavity, whereby there is little risk of unintentional delamination of the potting material.
  • a portion of the potting material forms an optical Lin ⁇ se.
  • the optical lens can be used to from the optoelectronic nischer component to focus radiated electromagnetic radiation.
  • the undercut formed in the region of the cavity of the housing body reduces the risk of unintentional delamination of the optical lens.
  • FIG. 1 shows a sectional side view of a leadframe with a placeholder structure arranged on an upper side
  • Fig. 2 is a plan view of the top of the lead frame; 3 shows a sectional side view of the leadframe and the placeholder structure after its embedding in a housing body;
  • FIG. 4 shows a sectional side view of a optoelectronic see component.
  • FIG. 5 shows a plan view of the upper side of the leadframe with a placeholder structure according to a second embodiment
  • FIG. 6 is an illustration of a dummy structure according to a third embodiment
  • Figure 8 is a sectional side view of an optoelectronic ⁇ 's device according to a second embodiment.
  • 9 is a side view of the optoelectronic component of the second embodiment;
  • 10 shows a placeholder structure according to a fourth embodiment;
  • Figure 11 is a sectional side view of the fourth exporting ⁇ approximate shape of the dummy structure.
  • Figure 12 is a sectional side view of an optoelectronic ⁇ 's device according to a third embodiment.
  • FIG. 13 is a plan view of the third embodiment of the optoelectronic device.
  • Fig. 1 shows a highly schematic cut Soan ⁇ view of a portion of a lead frame 100.
  • the lead frame 100 may also be referred to as the lead frame.
  • the mennatirah- 100 is provided for producing a housing of an opto-electro ⁇ African component.
  • the lead frame 100 comprises an electrically conductive material, for example a metal.
  • FIG. 2 shows a highly schematic representation of a plan view of the upper side 101 of the leadframe 100.
  • the leadframe 100 may have openings extending between the upper side 101 and lower side 102, which divide the leadframe 100 laterally into sections spaced apart from one another. This is not shown in the schematic representation of FIG. 1.
  • the lead frame 100 has a contact region 110.
  • the contact region 110 is opposite to the other variants. cut the top 101 of the lead frame 100 sublime, but this is not mandatory.
  • the Kunststoffbe ⁇ rich 110 of the top 101 of the lead frame 100 may be provided to receive an optoelectronic semiconductor chip and / or for producing an electrically conductive connection to an optoelectronic semiconductor chip.
  • the place holder structure 200 is formed when 100 Erhe ⁇ bender dam on the upper surface 101 of the leadframe.
  • the placeholder structure 200 has a closed loop 230, which annularly delimits the contact area 110 of the upper side 101 of the leadframe 100.
  • the contact region 110 of the top 101 of the LEI is terrahmens 100 not be covered by the wildcard ⁇ structure 200th
  • the placeholder structure 200 covers only the contact area 110 bounding portions of the upper side 101 of the lead frame 100.
  • the placeholder structure 200 comprises a first material 205.
  • the first material 205 can comprise, for example, an acrylate, a photoresist, polyoxymethylene, polyvinyl acetate, polyvinyl alcohol, a thermoset or a wax or another binder.
  • the placeholder structure 200 may be formed directly on the top side 101 of the leadframe 100.
  • the placeholder structure 200 may have been formed directly in its final shape, that is, as a dam with the loop 230 enclosing the contact area 110 in an annular manner.
  • the placeholder structure 200 for example, by a geeigne ⁇ tes molding process, in particular by injection molding ⁇ , by a suitable printing process, in particular by a screen printing process, or by a suitable metering sierhabilit, in particular for example Nadeldosie ⁇ reindeer, at the top 101 of Lead frame 100 has been arranged.
  • the placeholder structure 200 may also be in shape a preformed film on the top 101 of the lead frame 100 has been applied.
  • the dummy structure 200 may have been arranged on the upper side 101 of the lead frame 100 by the first material was applied 205 flat on the top 101 of the lead frame 100 to ⁇ next and the first Materi ⁇ al was then patterned 205 to the Platzhal ⁇ structure 200.
  • the first material 205 first has additional or even all sections of the
  • Top 101 of the lead frame 100 is covered and has subsequently ⁇ walked removed in some portions of the top 101 of the lead frame 100 such that only the dummy structure 200 shown in Figures 1 and 2 has remained.
  • the full or partial application of the first material 205 can be effected, for example, by a metering method, by a spraying method, by application of dry lacquer or by a printing method.
  • the patterning of the first material 205 may, for example, be done by a method that includes an exposure of the lateral portions of the first material 205 to be removed or an exposure of the remaining portions of the first material 205.
  • the structuring of the first material 205 may also have included a photolithographic process.
  • Fig. 3 shows a schematic sectional side view of the lead frame 100 and disposed at the top 101 of the Porterrah ⁇ mens 100 wildcard structure 200 in the illustration of FIG. 1 temporally succeeding processing status.
  • a housing body 300 has been formed from a two ⁇ th material 305.
  • the conductor frame 100 and the placeholder structure 200 have been partially embedded in the second material 305.
  • Forming the Ge ⁇ koruse stresses 300 may, for example, by a molding process (Moldmaschine) may be carried out, in particular, for example, by transfer molding or by injection molding (injection molding).
  • the lead frame 100 and the dummy structure has been at least partially converts 200 during forming the Gezzau ⁇ se stressess 300 through the second material 305 of the housing body 300th
  • the second material 305 of the package body 300 may have at ⁇ play, an epoxy, a polyphthalamide or a silicone.
  • the housing body 300 has a cavity 310. In the region of the cavity 310, a part of the upper side 101 of the conductor ⁇ frame 100 is exposed and is not covered by the second material 305 of the housing body 300. In particular, in the region of the cavity 310 of the housing body 300, the contact region 110 of the upper side 101 of the leadframe 100 is exposed.
  • the placeholder structure 200 arranged on the upper side 101 of the leadframe 100 has been partially embedded in the second material 305 of the housing body 300 such that a portion 210 of the placeholder structure 200 is exposed in the region of the cavity 310 of the housing body 300 and not by the second material 305 of the housing body 300 is covered, while the remaining parts of the placeholder structure 200 in a cavity 310 bounding wall of the housing body 300 are embedded.
  • Fig. 4 shows a schematic sectional side view of egg ⁇ nes optoelectronic component 10, the processing by further loading has been made of the example shown in Fig. 3 the housing body 300.
  • the optoelectronic component 10 may be, for example, a light-emitting diode component (LED component).
  • LED component light-emitting diode component
  • an undercut 320 has been formed on the housing body 300 in the region of the cavity 310, which runs around the contact area 110 of the leadframe 100 which is exposed in the cavity 310. Since the placeholder structure 200 was previously arranged directly on the upper side 101 of the leadframe 100 and thus also the free space 220 resulting from the removal of the placeholder structure 200 directly adjoins the upper side 101 of the leadframe 100, the undercut 320 formed on the housing body 300 also borders to the top 101 of the lead frame 100 embedded in the package body 300.
  • the removal of the first material 205 of the placeholder structure 200 may be effected by detaching the first material 205 by means of a chemical process.
  • the first material 205 of the placeholder structure 200 may have been dissolved out by an acid, a base or a solvent. If the first material 205 has exhibited an acrylate, then the dissolution of the first material 205 of the placeholder structure 200 may have taken place, for example, with NaOH. If the first material 205 has polyoxymethylenetician ⁇ sen, the dissolution of the first material 205 of the placeholder structure 200 may be carried out for example with a mineral acid or an organic acid.
  • the dissolution of the first material 205 of the placeholder structure 200 may be carried out, for example, with a lower alcohol, a ketone, an ester, a cyclic ether or an aromatic or chlorinated hydrocarbon. If the first material has exhibited 205 polyvinyl alcohol, the dissolution of the first material 205 can be carried out of the Platzhal ⁇ ter Vietnamese 200, for example, with water. The removal of the first material 205 of the placeholder structure 200 may additionally or alternatively also be effected by means of a physical method.
  • the removal of the first material 205 of the placeholder structure 200 by a thermal process in particular ⁇ example by evaporation or decomposition, by irradiation, in particular for example by UV-activated Zerset ⁇ tion, or by a mechanical method, in particular for example by decomposition by means of ultrasound , be done.
  • the first material 205 of the Platzhal ⁇ terpatented 200 and the second material 305 of the Gesimousekör- pers 300 are selected so that the first material 205 of the
  • Semiconductor chip 400 has been arranged in the cavity 310 of the housing body 300.
  • the arrangement of the optoelectronic semiconductor chip 400 in the cavity 310 may be effected before or after the removal of the first material 205 of the placeholder structure 200.
  • the optoelectronic semiconductor chip 400 may be provided to emit electromagnetic radiation, such as visible light.
  • the optoelectronic semiconductor chip 400 can be formed, for example, as a light-emitting diode chip (LED chip).
  • the optoelectronic semiconductor chip 400 can be arranged in the cavity 310 of the housing body 300 on the contact region 110 of FIG Be arranged top 101 of the lead frame 100.
  • the optoelectronic semiconductor chip 400 can, however, also be arranged at a different location in the cavity 310 of the housing body 300 and be connected only in an electrically conductive manner to the contact region 110 of the leadframe 100, for example by means of a bonding wire.
  • a potting material 500 has been arranged in the cavity 310 of the housing body 300.
  • the optoelectronic semi ⁇ conductor chip 400 has been at least partially embedded in the potting material 500.
  • the potting material 500 fills the cavity 310 advantageously completely as possible and extends in particular at least in a part of the damage caused by the Ent ⁇ remote the place holder structure 200 free space 220. This is arranged in the cavity 310 potting ⁇ material 500 positively anchored behind the undercut 320th
  • the placement of the potting material 500 in the cavity 310 of the package body 300 may, for example, by a drive Dosierver ⁇ or by a molding process (Mold Kunststoff) may be carried out, in particular, for example, by compression molding (compress- sion molding).
  • the molding material 500 may have for example a silicone on ⁇ .
  • the molding material 500 may have embedded wellenlän ⁇ genkonvert Schlierende particles, which are intended to convert at least a portion of a light emitted by the optoelectronic semiconductor chip 400 electromagnetic radiation into electromagnetic radiation of a different wavelength.
  • the potting material 500 may also include embedded scattering particles, for example, scattering particles comprising T1O 2 .
  • the potting material 500 may form an optical lens 510 at the exit of the cavity 310 on the outside of the housing body 300. However, this is not mandatory.
  • Fig. 5 shows a schematic representation of a plan view of the top 101 of the lead frame 100 in one of the illustration ⁇ treatment of FIG. 2 corresponding processing status.
  • a placeholder structure 200 according to an alternative embodiment is arranged on the upper side 101 of the leadframe 100.
  • the embodiment of the placeholder structure 200 shown in FIG. 5 can replace the embodiment of the placeholder structure 200 shown in FIGS. 1 and 2 in the method explained with reference to FIGS. 1 to 4.
  • the lead frame 100 has a larger lateral extent than shown in FIGS. 1 and 2.
  • the top surface 101 of the lead frame 100 in this case has a plurality of card contacts rich to 110, which may for example be arranged in a regular Mat ⁇ rixan extract.
  • a placeholder structure 200 is then arranged on the upper side 101 of the leadframe 100, which supports the respective contact area 110.
  • area 110 at least partially bounded.
  • the head ⁇ frame 100 and the dummy structures 200 are embedded in a housing body composite comprising a plurality of Ge ⁇ reheat stresses 300th
  • the housing bodies 300 may be integrally connected together in the housing body assembly.
  • Each housing body 300 is formed as described with reference to FIGS. 1 to 4.
  • the subsequent removal of the placeholder structures 200 can take place simultaneously in all housing bodies 300 of the housing body assembly.
  • In the cavity 310 of each GeHousekör ⁇ pers 300 of the housing body composite is positioned a shear ⁇ optoelectronic semiconductor chip 400th Subsequently, the cavities 310 are filled with the potting material 500.
  • FIGS. 6 and 7 show a schematic plan view of a composite of placeholder structures 200 according to a further alternative embodiment.
  • 7 shows a schematic sectional side view of the assembly of placeholder structures 200.
  • the embodiment of the placeholder structures 200 shown in FIGS. 6 and 7 is particularly suitable for use in the case where, as described, a plurality of optoelectronic components 10 are simultaneously in common processing ⁇ steps is produced.
  • the placeholder structures 200 of the composite shown in FIGS. 6 and 7 are arranged in a regular two-dimensional matrix arrangement.
  • Each place holder structure 200 includes a closed loop 230 which is formed as in the embodiment shown in Figu ⁇ ren 1 and 2, the dummy structure 200th
  • the mesh 230 adjacent Platzhal ⁇ ter Modellen 200 of the composite are connected via connecting bars 250 with one another, so that the dummy structures 200 of the composite form a coherent grid.
  • the assembly of spacer structures 200 shown in FIGS. 6 and 7 can be prefabricated prior to the arrangement of the placeholder structures 200 on the top side 101 of the leadframe 100, for example by a molding process (molding process) or by a printing process.
  • the continuous grid of the assembly of placeholder structures 200 can then be arranged on the upper side 101 of the leadframe 100 such that the meshes 230 of all placeholder structures 200 of the composite each delimit a contact region 110 of the leadframe 100. Further processing takes place as previously be ⁇ wrote.
  • Fig. 8 shows a schematic sectional side view of egg ⁇ nes optoelectronic component 10 in an execution ⁇ shape, resulting in the use of the embodiment of the dummy structure 200 shown in Figures 6 and 7.
  • the embodiment of the optoelectronic component 10 shown in FIG. 8 differs from the embodiment of the optoelectronic component 10 shown in FIG. 4
  • channels 225 have been formed, which extend from the cavity 310 of the housing body 300 through the housing body 300 up to an outside of the housing body 300 extend.
  • potting material 500 ⁇ it also extends into these channels 225 and is thus visible on the outer sides of the housing body 300 at the openings 225 of the channels.
  • ge 9 shows ⁇ in the schematic side view of the optoelectronic component 10 of FIG..
  • FIG. 10 shows a schematic representation of a plan view of a composite of a plurality of dummy structures 200 according to a further embodiment.
  • 11 shows a schematic sectional side view of the composite of Platzhalterstruktu ⁇ Ren 200 of the embodiment shown in Fig. 10.
  • the guren embodiment of Platzhal ⁇ ter Modellen 200 10 and 11 shown corresponds to the following erläu ⁇ failed differences of the embodiment of the dummy structures 200 shown in Figures 6 and 7.
  • FIG. 10 shows a schematic representation of a plan view of a composite of a plurality of dummy structures 200 according to a further embodiment.
  • 11 shows a schematic sectional side view of the composite of Platzhalterstruktu ⁇ Ren 200 of the embodiment shown in Fig. 10.
  • the guren embodiment of Platzhal ⁇ ter Designen 200 10 and 11 shown corresponds to the following erläu ⁇ failed differences of the embodiment of the dummy structures 200 shown in Figures 6 and 7.
  • the embodiment of the placeholder structure 200 shown in FIGS. 10 and 11 differs from the embodiment of the placeholder structures 200 shown in FIGS. 6 and 7 in that the connecting webs 250 between the faces 230 of the individual placeholder structures 200 extend perpendicularly from the lateral plane of the placeholder structures 200 rise. If the placeholder structures arranged 200 of the embodiment at the top 101 of the lead frame shown in Figures 10 and 11 100, as are parts of the conjunction webs 250 is not at the top 101 of the lead frame 100, but rather are above the top surface 101 beab ⁇ standet and the top 101 of the lead frame 100 angeord ⁇ net. In the sectional view of FIG. 11, the connecting webs 250 may each have, for example, a U-shape.
  • Fig. 12 shows a schematic sectional side view of the optoelectronic component 10 in a ⁇ execution form which is obtainable when using the embodiment of the dummy structure 200 shown in Figures 10 and 11.
  • 13 shows a schematic representation of a plan view of an upper side of the optoelectronic component 10 with the cavity 310 opened to the upper side of the housing body 300.
  • the embodiment of the optoelectronic component 10 shown in Figures 12 and 13 differs from that shown in Fig. 8 embodiment of the optoelectronic component 10 in that the channels 225,300 he stretch by the Ge ⁇ reheat stresses 300 to the top of the housing body ⁇ ,
  • the potting material 500 arranged in the channels 225 is thus visible on the upper side of the housing body 300 of the optoelectronic component 10.
  • the invention has been further illustrated and described with reference to the preferredtientsbei ⁇ games. However, the invention is not limited to the disclosed examples. On the contrary, other variations can be derived by the person skilled in the art without departing from the scope of the invention.
  • Placeholder structure 200 first material 205
  • Housing body 300 second material 305th

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de fabrication d'un composant optoélectronique, le procédé comprenant les étapes consistant à produire une grille de connexion pourvue d'une face supérieure comportant une zone de contact, disposer sur la face supérieure de la grille de connexion une structure d'espace réservé, en une première matière, délimitant au moins partiellement la zone de contact, former un corps de boîtier en une seconde matière, la grille de connexion et la structure d'espace réservé étant incorporées au moins partiellement dans la seconde matière, le corps de boîtier étant pourvu d'une cavité, la région de contact et une partie de la structure d'espace réservé restant non recouvertes par la seconde matière dans la région de la cavité, et retirer au moins une partie de la structure d'espace réservé.
PCT/EP2017/051987 2016-02-01 2017-01-31 Procédé de fabrication d'un composant optoélectronique et composant optoélectronique WO2017134029A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016101719.1 2016-02-01
DE102016101719.1A DE102016101719A1 (de) 2016-02-01 2016-02-01 Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement

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WO2017134029A1 true WO2017134029A1 (fr) 2017-08-10

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020074664A1 (fr) * 2018-10-11 2020-04-16 Osram Opto Semiconductors Gmbh Composant optoélectronique et son procédé de fabrication

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021130173A1 (de) * 2021-11-18 2023-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektronische vorrichtung und verfahren zur herstellung einer elektronischen vorrichtung

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060102918A1 (en) * 2004-11-16 2006-05-18 Wen-Lung Su Package Structure of a Surface Mount Device Light Emitting Diode
US20090134408A1 (en) * 2007-11-28 2009-05-28 Samsung Electronics Co., Ltd. Light emitting diode package, method of fabricating the same and backlight assembly including the same
US20120280262A1 (en) * 2011-05-06 2012-11-08 Advanced Optoelectronic Technology, Inc. Semiconductor light emitting device and method for manufacturing thereof
US20130001629A1 (en) * 2011-06-30 2013-01-03 Advanced Optoelectronic Technology, Inc. Led and method for manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8564004B2 (en) * 2011-11-29 2013-10-22 Cree, Inc. Complex primary optics with intermediate elements
DE102014102293A1 (de) * 2014-02-21 2015-08-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung optoelektronischer Halbleiterbauteile und optoelektronisches Halbleiterbauteil

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060102918A1 (en) * 2004-11-16 2006-05-18 Wen-Lung Su Package Structure of a Surface Mount Device Light Emitting Diode
US20090134408A1 (en) * 2007-11-28 2009-05-28 Samsung Electronics Co., Ltd. Light emitting diode package, method of fabricating the same and backlight assembly including the same
US20120280262A1 (en) * 2011-05-06 2012-11-08 Advanced Optoelectronic Technology, Inc. Semiconductor light emitting device and method for manufacturing thereof
US20130001629A1 (en) * 2011-06-30 2013-01-03 Advanced Optoelectronic Technology, Inc. Led and method for manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020074664A1 (fr) * 2018-10-11 2020-04-16 Osram Opto Semiconductors Gmbh Composant optoélectronique et son procédé de fabrication

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