WO2017122954A1 - Microphone et procédé de fabrication de microphone - Google Patents

Microphone et procédé de fabrication de microphone Download PDF

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Publication number
WO2017122954A1
WO2017122954A1 PCT/KR2016/015440 KR2016015440W WO2017122954A1 WO 2017122954 A1 WO2017122954 A1 WO 2017122954A1 KR 2016015440 W KR2016015440 W KR 2016015440W WO 2017122954 A1 WO2017122954 A1 WO 2017122954A1
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WO
WIPO (PCT)
Prior art keywords
membrane
back plate
support
electrode
substrate
Prior art date
Application number
PCT/KR2016/015440
Other languages
English (en)
Korean (ko)
Inventor
공관호
유인근
Original Assignee
(주)글로벌센싱테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by (주)글로벌센싱테크놀로지 filed Critical (주)글로벌센싱테크놀로지
Priority to CN201680078831.8A priority Critical patent/CN108464017B/zh
Publication of WO2017122954A1 publication Critical patent/WO2017122954A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor

Definitions

  • the present invention relates to a microphone and a method of manufacturing a microphone, and more particularly, an electrostatic charge having a membrane vibrating by an external sound pressure and a back plate disposed in parallel with the membrane and charged in electrodes formed on the membrane and the back plate, respectively.
  • a microphone for measuring sound pressure using a change in capacity, and a method for manufacturing the microphone are particularly preferred.
  • the present invention has been made to solve the above problems, and an object thereof is to provide a method for producing a high quality microphone at a low cost and a relatively simple process, and a microphone manufactured by the method.
  • the microphone of the present invention the substrate; A membrane disposed on the substrate; A membrane support for supporting an outer circumference of the membrane with respect to the substrate; A back plate disposed above the membrane; A back plate support unit supporting an outer circumference of the back plate with respect to the substrate; A second electrode formed on the back plate; And a first electrode formed on the membrane, wherein the back plate support is formed of a structure in which an oxide film is disposed between at least two rows of a nitride film surrounding the outer circumference of the back plate and the nitride film.
  • 1 to 15 are cross-sectional views illustrating a microphone manufacturing method according to an embodiment of the present invention.
  • the microphone manufacturing method according to the present invention is for producing a microphone having a structure as shown in FIG.
  • a membrane support 220 is formed on the substrate 100 to support the membrane 200.
  • the membrane support 220 is firmly fixed to the substrate by the membrane support fixture 503.
  • the first electrode 201 is formed on the membrane 200.
  • the membrane 200 is vibrated by the sound pressure transmitted from the outside.
  • the back plate 300 is disposed above the membrane 200.
  • the backplate 300 is supported relative to the substrate 100 by the backplate support 310.
  • a plurality of sound holes 320 are formed in the back plate 300. External sound pressure is transmitted to the membrane 200 through the sound hole 320 of the back plate 300.
  • the second electrode 301 is formed on the back plate 300.
  • the membrane 200 vibrates, the distance between the first electrode 201 and the second electrode 301 is changed, and as a result, the capacitance between the first electrode 201 and the second electrode 301 is changed.
  • a change in sound pressure may be converted into an electrical signal.
  • a portion of the substrate 100 is removed below the membrane 200 to form a cavity 101.
  • a first sacrificial layer is formed on the upper surface of the substrate (step (a)).
  • the first sacrificial layer 510 is prepared by depositing an insulating layer oxide film on the silicon wafer substrate 100.
  • a portion of the first sacrificial layer 510 is etched to surround the outer circumference of the region where the membrane 200 is to be formed to form a membrane outer circumference 501 exposing the surface of the substrate (( b) step).
  • the membrane outer periphery 501 is formed by removing the first sacrificial layer 510 at the position where the membrane support 220 supporting the membrane 200 is to be formed to expose the substrate 100.
  • the membrane support 220 is formed on the substrate 100 to form the membrane outer circumference 501 in order to support the membrane 200.
  • the membrane outer periphery 501 is formed in a circular or near circular shape along the circumferential direction.
  • the region of the first electrode 201 is doped to form the first electrode 201 on the first silicon layer 610 (step (d)).
  • the first silicon layer 610 is doped by ion implantation.
  • the first silicon layer 610 at the position where the first electrode 201 is to be formed becomes conductive.
  • the region of the electrode pad is also doped. The electrode pad is formed to be able to be connected to an external circuit by wire bonding in the future.
  • the second sacrificial layer 520 is stacked on the first silicon layer 610 (step (f)).
  • the second sacrificial layer 520 constitutes an air gap 420 between the membrane 200 and the back plate 300.
  • the second sacrificial layer 520 is formed by stacking oxide films.
  • the second silicon layer 620 formed in step (g) is doped to have conductivity, thereby preparing to form the second electrode 301 (step (h)).
  • the second silicon layer 620 is formed by stacking undoped polysilicon to form the second electrode 301 and doped by ion implantation to make it conductive. .
  • step (g) the second silicon layer 620 doped in step (g) is etched to form a second electrode 301 (step (i)).
  • the structure for supporting the second electrode 301 is provided to complete the back plate 300.
  • the second sacrificial material surrounds the outer circumference of the region where the back plate 300 is to be formed.
  • the layer 520 is etched to form two rows of back plate outer peripheries 311 exposing the surface of the substrate 100 (step (j)).
  • the second sacrificial layer 520 is etched so as to surround the membrane 200 and the back plate 300 at a position relatively farther than the membrane support 220 to expose the substrate 100 positioned below the second sacrificial layer 520.
  • the back plate support part 310 capable of supporting the back plate 300 with respect to the substrate 100 may be prepared. do.
  • a nitride is deposited to provide a backing layer support part 310 and a backing plate 300 to form a backing layer 701 (step (k)).
  • the dimple 330 is formed by depositing nitride in the region etched in step (o).
  • the back plate 300 may be stably supported by the back plate support 310 having a structure in which a second sacrificial layer is filled between outer portions of the back plate outer periphery 311 filled with nitride.
  • the back plate outer periphery 311 and the second sacrificial layer 520 disposed therebetween which has an insulating property and excellent selectivity with respect to the sacrificial layer, the space between the back plate 300 and the membrane 200 is later formed.
  • the configuration outside the back plate support 310 has an advantage that can be stably preserved without being affected.
  • a portion of the support layer 701 or the support layer 701 and the second sacrificial layer 520 is etched to form the first silicon layer 610 in the region where the electrode pads 401 and 402 are to be formed, respectively. And exposing the second silicon layer 620 (step (p)).
  • step (p) By etching a portion of the support layer 701 and the second sacrificial layer 520 to expose a portion of the first silicon layer 610 to provide a region in which the electrode pad 401 to be connected to the first electrode 201 is formed. do.
  • the electrode pad 402 connected to the second electrode 301 only a portion of the support layer 701 is etched.
  • the support layer 701 and the second electrode 301 are etched at a plurality of points within the area surrounded by the back plate support 310 to form the sound hole 320 ((l) ) step).
  • the external sound pressure is transmitted to the membrane 200 inside the back plate 300 through the sound hole 320.
  • the cavity 101 is removed by removing a portion of the substrate 100 in the area surrounded by the membrane support parts 220 below the membrane 200. (Step (m)).
  • the cavity 101 formed by etching the rear surface of the substrate 100 serves as a back chamber of the microphone.
  • the first sacrificial layer 510 and the second sacrificial layer 520 are removed through an etching process to make the membrane 200 vibrate ((n) step. ).
  • an air gap 420 is formed between the first electrode 201 and the second electrode 301, and the dimple 330 penetrating the second electrode 301 is the first electrode. Exposed to protrude toward 201.
  • the support layer 701 by forming the support layer 701 using the nitride having excellent selectivity with respect to the sacrificial layer, a chamber surrounded by the support layer 701 is formed, and the membrane 200 is disposed therein. .
  • step (b) the membrane support groove 502 is formed, and in step (c), the undoped-polysilicon is also laminated to the membrane support groove 502 so that the membrane outer peripheral portion 501 and the membrane support groove are formed.
  • the membrane support part 220 in which the membrane support fixing part 503 is formed between the 502, there is an advantage that the membrane 200 can be more stably supported with respect to the substrate 100.
  • the structure of the membrane 200 and the back plate 300 may be variously modified.
  • the support layer 701 has been described as being formed by depositing nitride, it is also possible to configure the support layer using another insulating material.
  • the microphone of the present invention has the same structure as the microphone manufactured by the microphone manufacturing method described above.
  • the back plate support part 310 having a two-row structure has a structure in which an insulating layer oxide film is disposed between nitride films. That is, the back plate support 310 is formed such that the back plate support 310 surrounds the outer circumference of the back plate 300 in a state where two rows of nitride films cover the insulating layer oxide film deposited on the substrate 100. . Even if the second sacrificial layer 520 is removed and the air gap 420 is formed by the structure, the back plate 300 may be effectively prevented from being etched or damaged in other components around the back plate support 310. ) Can secure a structure that can support () stably.
  • the membrane support fixing part 503 formed of an oxide film is formed on the outer side of the membrane supporting groove 502 and the outer periphery of the membrane 200 is covered with the nitride support covering the membrane supporting fixing part 503.
  • the membrane support unit 220 may have a structure capable of stably supporting the membrane 200.
  • such a structure of the membrane support 220 has an advantage of improving the durability of the microphone by dispersing or offsetting internal stress that may be caused by the membrane 200 or the peripheral structure of the membrane support 220. .

Abstract

La présente invention concerne un microphone et un procédé de fabrication de microphone, le microphone comprenant : une membrane comportant une électrode d'attaque ; et une plaque arrière comprenant une électrode fixe, les deux électrodes étant reliées mécaniquement à un substrat. Le procédé de fabrication de microphone selon la présente invention a pour effets d'améliorer la qualité d'un processus de fabrication de microphone et d'améliorer la performance du microphone en améliorant une structure supportant la plaque arrière et une structure supportant la membrane.
PCT/KR2016/015440 2016-01-15 2016-12-28 Microphone et procédé de fabrication de microphone WO2017122954A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201680078831.8A CN108464017B (zh) 2016-01-15 2016-12-28 麦克风及麦克风制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160005092A KR101711444B1 (ko) 2016-01-15 2016-01-15 마이크로폰 및 마이크로폰 제조 방법
KR10-2016-0005092 2016-01-15

Publications (1)

Publication Number Publication Date
WO2017122954A1 true WO2017122954A1 (fr) 2017-07-20

Family

ID=58427057

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2016/015440 WO2017122954A1 (fr) 2016-01-15 2016-12-28 Microphone et procédé de fabrication de microphone

Country Status (3)

Country Link
KR (1) KR101711444B1 (fr)
CN (1) CN108464017B (fr)
WO (1) WO2017122954A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110357031A (zh) * 2018-04-11 2019-10-22 中芯国际集成电路制造(上海)有限公司 Mems器件及其制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108810773A (zh) 2017-04-26 2018-11-13 中芯国际集成电路制造(上海)有限公司 麦克风及其制造方法
KR102370645B1 (ko) * 2017-09-11 2022-03-07 주식회사 디비하이텍 멤스 마이크로폰 및 이의 제조 방법
KR102424774B1 (ko) * 2017-09-11 2022-07-25 주식회사 디비하이텍 멤스 마이크로폰 및 이의 제조 방법

Citations (5)

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US20060280319A1 (en) * 2005-06-08 2006-12-14 General Mems Corporation Micromachined Capacitive Microphone
KR100812690B1 (ko) * 2006-04-27 2008-03-13 (주) 대일씨티 콘덴서 마이크로폰
KR101126604B1 (ko) * 2010-04-13 2012-03-23 동양텔레콤 주식회사 정전용량형 멤스 마이크로폰의 제조방법
KR101146513B1 (ko) * 2010-09-06 2012-05-25 주식회사 블루콤 콘덴서 마이크로폰 조립체 및 그 제조방법
JP2015177336A (ja) * 2014-03-14 2015-10-05 オムロン株式会社 静電容量型トランスデューサ

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US6870939B2 (en) * 2001-11-28 2005-03-22 Industrial Technology Research Institute SMT-type structure of the silicon-based electret condenser microphone
CN1694575A (zh) * 2004-05-09 2005-11-09 美律实业股份有限公司 电容式硅基微麦克风及其制法
WO2007014022A1 (fr) * 2005-07-22 2007-02-01 Qualcomm Incorporated Dispositifs de microsysteme electromecanique comportant des structures de support et leurs procedes de fabrication
JP2009509786A (ja) * 2005-09-30 2009-03-12 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Ｍｅｍｓ装置及びｍｅｍｓ装置における相互接続
US20090116675A1 (en) * 2005-12-14 2009-05-07 Yuichi Miyoshi Mems diaphragm structure and method for forming the same
CN200983677Y (zh) * 2006-08-22 2007-11-28 美律实业股份有限公司 硅晶电容式麦克风

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060280319A1 (en) * 2005-06-08 2006-12-14 General Mems Corporation Micromachined Capacitive Microphone
KR100812690B1 (ko) * 2006-04-27 2008-03-13 (주) 대일씨티 콘덴서 마이크로폰
KR101126604B1 (ko) * 2010-04-13 2012-03-23 동양텔레콤 주식회사 정전용량형 멤스 마이크로폰의 제조방법
KR101146513B1 (ko) * 2010-09-06 2012-05-25 주식회사 블루콤 콘덴서 마이크로폰 조립체 및 그 제조방법
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110357031A (zh) * 2018-04-11 2019-10-22 中芯国际集成电路制造(上海)有限公司 Mems器件及其制备方法
CN110357031B (zh) * 2018-04-11 2022-01-28 中芯国际集成电路制造(上海)有限公司 Mems器件及其制备方法

Also Published As

Publication number Publication date
CN108464017B (zh) 2020-07-28
KR101711444B1 (ko) 2017-03-02
CN108464017A (zh) 2018-08-28

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