WO2017121608A1 - Modulateur électro-optique basé sur une structure de cristal à semi-conducteurs stratifiée - Google Patents

Modulateur électro-optique basé sur une structure de cristal à semi-conducteurs stratifiée Download PDF

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Publication number
WO2017121608A1
WO2017121608A1 PCT/EP2016/082434 EP2016082434W WO2017121608A1 WO 2017121608 A1 WO2017121608 A1 WO 2017121608A1 EP 2016082434 W EP2016082434 W EP 2016082434W WO 2017121608 A1 WO2017121608 A1 WO 2017121608A1
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Prior art keywords
electro
optical modulator
semiconducting material
optical
light
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PCT/EP2016/082434
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English (en)
Inventor
Christoph GADERMAIER
Daniele VELLA
Guglielmo Lanzani
Nicola Martino
Maria Rosa Antognazza
Andras KIS
Dmitry OVCHINNIKOV
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Jozef Stefan Institute
Fondazione Istituto Italiano Di Tecnologia
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Publication of WO2017121608A1 publication Critical patent/WO2017121608A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0151—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the refractive index
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption

Definitions

  • the present invention relates to the field of semiconductor photonics, particularly, but not exclusively, to a device in which voltage controls the absorption of light in an active medium consisting of a semiconductor possessing a layered crystal structure.
  • An electro-optic effect is a change in the optical properties of a material in response to an electric field that varies slowly compared with the frequency of light.
  • the term encompasses a number of distinct phenomena, which can be subdivided into a) change of the absorption (electroabsorption, caused by the Stark effect, Franz-Keldysh effect, quantum-confined Stark effect, electrochromic effect), and b) change of the refractive index and permittivity (Pockels effect, Kerr effect, electro-gyration, electron-induced permittivity modification).
  • Electro-optic modulators are used, among others, in fiber optics communication, optical signal- processing applications (e.g. Pockels Readout Optical Memory, PROM), for tuning the amount of light impinging on a photodetector or camera, and potentially as a low-power consumption solution for high speed on-chip communication in semiconductor or photonic chips.
  • Electro-absorption modulators are a subcategory of electro-optic modulators.
  • An EAM is a semiconductor device which can be used for modulating the intensity of a light beam via an electric voltage. Its principle of operation is based on a change in the absorption spectrum caused by an applied electric field, which changes the bandgap energy (thus the photon energy of an absorption edge) but does not necessarily involve the excitation of carriers by the electric field.
  • the EAM is a candidate for use in modulation links in telecommunications. These modulators can be realized using either bulk semiconductor materials or materials with multiple quantum dots or wells. Compared with other electro-optic modulators, EAMs can operate with much lower voltages (a few volts instead of ten volts or more). They can be operated at very high speed; a modulation bandwidth of tens of gigahertz can be achieved, which makes these devices useful for fibre optics communication.
  • a convenient feature is that an EAM can be integrated with a distributed feedback laser diode on a single chip to form a data transmitter in the form of a photonic integrated circuit. Compared with direct modulation of a laser diode, a higher bandwidth and reduced chirp can be obtained.
  • EAMs are made in the form of a waveguide with electrodes for applying an electric field in a direction perpendicular to the modulated light beam. Modulation is achieved by modulating the evanescent wave along the waveguide. For achieving a high extinction ratio, the Quantum-confined Stark effect (QCSE) in a quantum well structure is usually exploited.
  • QCSE Quantum-confined Stark effect
  • Optical modulators with high modulation speed, small footprint and large optical bandwidth are needed as the enabling device for on-chip optical interconnects.
  • Semiconductor optical modulators have witnessed rapidly expanding research interests over the last few years. However, it has been found that the prior art semiconductor based electro-optical modulators have disadvantages including stringent fabrication tolerance, high cost, large device footprint and high optical loss.
  • the device footprint of silicon-based modulators is of the order of millimeters, these devices are limited by their weak electro-optical properties. Germanium and compound semiconductors, on the other hand, face the major challenge of integration with existing silicon electronics and photonics platforms. Integrating the silicon modulators with high quality- factor optical resonators efficiently increases the modulation depth. However, these devices suffer from intrinsic narrow-bandwidth aside from their sophisticated optical design, stringent fabrication and temperature tolerances. Notably, such semiconductor optical modulators are also polarization sensitive. Finding a material with adequate modulation speed and depth is becoming a task of not only scientific interest, but also industrial importance. The key parameter for the length of the light path through the device necessary to achieve sufficient light modulation is the light-matter interaction.
  • aspects of the present invention provide an electroabsorption modulator based on an ultrathin) film of a 2-dimensional semiconductor.
  • a first aspect of the present invention provides an electro-optical modulator having: a mono- or multi-layered film of 2-dimensional semiconducting material having a layered crystal structure; and electrodes formed at each side of the semiconducting material, wherein the application of electrical potential to said electrodes and across said semiconducting material modulates the transmittance of light of certain wavelengths as a function of the voltage.
  • the semiconducting material is one selected from: the transition metal dichalcogenides (such as M0S2, WS2, MoSe2, WSe2, WTe2, MoTe2, ZrS2, HfS2, Ti S2), transition metal trichalcogenides such as TiS3, silicene, germanene, black phosphorus, III -VI compounds such as GaS, or perovskites (e.g. Bi 2 SrTa209).
  • the thickness of the semiconducting material is preferably between one single layer cell and 50 nm inclusive.
  • the operating principle of the modulator is based on electroabsorption effects, such as the Franz-Keldysh effect or the quantum confined Stark effect.
  • the operating principle is based on a change of the refractive index and permittivity, such as the Pockels effect, Kerr effect, electro-gyration or electron-induced permittivity modification.
  • the electrode may be directly connected to the semiconducting material, or the electro- optical modulator may have one or more dielectric layers sandwiched between one of the electrodes and the semiconducting material.
  • each of the electrodes is transparent or semi-transparent or contain suitable openings for the passage of light. In alternative embodiments, least one of the electrodes is reflecting.
  • the electro-optical modulator may further include a substrate.
  • the substrate may be a waveguide.
  • the modulator is formed on the termination of a waveguide.
  • the semiconducting material, the electrodes and the dielectric layers, if present, clad the circumferential surface of a waveguide.
  • the semiconducting material is completely covered with dielectric.
  • the semiconducting material may be decorated with conductive metallic or doped semiconductor nanostructures.
  • the charge carrier concentration in the semiconducting material may be controlled via chemical means such as, but not limited to substitution doping or adsorption doping.
  • the transmission modulation is achieved in a wavelength range covering one or more of the following telecom windows: 1260-1360 nm, 1360-1460 nm, 1460-1530 nm, 1530-1565 nm, 1565-1625 nm, and/or 1625-1675 nm.
  • the transmission modulation is achieved in a wavelength range covering all or a part of the visible spectrum between 380-780 nm.
  • the electro-optical modulator may further include an optical resonator arranged around the semiconducting material to enhance the optical path and/or light-matter interaction in the semiconducting material.
  • the electro-optical modulator of this first aspect may include some, all or none of the above described optional and preferred features of this aspect in any combination.
  • a second aspect of the present invention provides an optical device having an electro-optical modulator according to the above first aspect, including some, all or none of the optional or preferred features of that aspect.
  • the electro-optical modulator is arranged at an angle ranging from 75 to 90 degrees to the light path of freely propagating light in the optical device.
  • a third aspect of the present invention provides an integrated photonic circuit having an electro-optical modulator according to the above first aspect, including some, all or none of the optional or preferred features of that aspect, integrated into it.
  • the electro-optical modulator is arranged at an angle ranging from 75 to 90 degrees to the light path of light propagating inside the integrated photonic circuit.
  • a fourth aspect of the present invention provides an optical device having several electro- optical modulators according to the above first aspect, including some, all or none of the optional or preferred features of that aspect, arranged in sequence with respect to the propagation of light at a cumulative distance that is small compared to c/f, with c being the speed of light in the medium of propagation and/the modulation frequency.
  • a fifth aspect of the present invention provides a method of manufacturing the electro -optical modulator of the above first aspect, including some, all or none of the optional or preferred features of that aspect, the method including the steps of: depositing a first electrode on a substrate; forming a mono- or multi-layered film of 2-dimensional semiconducting material having a layered crystal structure; transferring said film to lie directly or indirectly on top of said first electrode; and depositing a further electrode directly or indirectly on top of said film.
  • the wavelength region where the modulation of the modulator is most efficient can be tuned by one or more of: uni- or bi-directional stretching, temperature, the number of layers, and chemical doping.
  • Fig. 1 shows an embodiment of the present invention having a 2d SC layer sandwiched between two electrodes with an electrical voltage signal applied to them.
  • Fig. 2a shows the device from Fig. 1 on a transparent substrate.
  • Fig. 2b shows the device of Fig. 2a built on an optical fibre as the substrate and coupled to another optical fibre.
  • Fig. 3a shows the device from Fig. 2a with a dielectric sandwiched between the 2d SC and one of the electrodes.
  • Fig. 3b shows the device with the 2d SC embedded into a dielectric.
  • Fig. 4a shows the device from Fig. 2a with a reflective electrode to enable the use in reflection geometry.
  • Fig. 5 shows the device from Fig. 3b with the 2d SC layer decorated with conductive nanoparticles.
  • Fig. 6 shows the device from Fig. 3b inside a Fabry-Perot interferometer
  • Fig. 7 shows a transparent single-layer M0S2 transistor according to an embodiment of the present invention.
  • Fig. 8 shows the spectrum of the relative change in transmission of the device from Fig. 7 for a peak-to-peak voltage modulation of 250 mV and different DC offsets to this voltage.
  • Fig. 9 shows the spectrum of the relative change in transmission of the device from Fig. 7 for different peak-to-peak modulation voltages.
  • Fig. 10 is an example of a photonic integrated circuit using several electro-absorption modulators according to the invention. Detailed description of preferred embodiments
  • an ultrathin (sub-nm to few nm) film of a 2d semiconductor material (2d SC) is sandwiched between two transparent electrodes and its transmission is modulated by the applied voltage between the two electrodes.
  • the 2d SC is a monolayer or a film consisting of more than one layer (up to a film thickness of 50 nm) of a semiconducting layered crystal.
  • Layered crystals are those that form strong chemical bonds in-plane but display weak out-of-plane bonding [Nicolosi et al, Science 340, 1226419 (2013)], such as, but not limited to the transition metal dichalcogenides (M0S2, WS2, MoSe2, WSe2, WTe2, MoTe2, ZrS2, HfS2, Ti S2), transition metal trichalcogenides such as TiS3, silicene, germanene, black phosphorus, III- VI compounds such as GaS, InS, GaSe, InSe, GaTe, InTe, or perovskites (e.g. Bi 2 SrTa209).
  • transition metal dichalcogenides M0S2, WS2, MoSe2, WSe2, WTe2, MoTe2, ZrS2, HfS2, Ti S2
  • transition metal trichalcogenides such as TiS3, silicene, germanene, black phosphorus
  • III- VI compounds such as GaS, InS,
  • a transverse electric field is applied by at least one electrode on each side of the film, with at least one electrode being either transparent or containing suitable openings for the transmission of light.
  • the transparent electrodes may consist of, but are not limited to few-nm metal films, a single- or few-layer 2d semimetal such as graphene or TaS2, or doped inorganic (such as Indium-Tin-Oxide) or organic (such as PEDOT:PSS) wide-gap semiconductor.
  • the electrodes may be positioned in the plane of the film, rather than on the surfaces of the film, so that the electric field between them is in the plane of the film.
  • Such an arrangement generally requires higher voltages to generate the same electrical field in the film, but would still exhibit similar effects.
  • the electrodes may enable the injection of charge carriers into the semiconductor if this enables or enhances the desired transmission modulation.
  • the charge density in the channel may be controlled via the applied electric field or via chemical means, such as adsorption of donor or acceptor molecules or elemental substitution in the semiconductor.
  • charge injection is not desired (e.g. because it may screen the applied electric field), it can be prevented by applying a thin insulating layer between the electrodes and the semiconductor.
  • the device may be inserted directly into the light path (preferentially with the semiconductor layers perpendicular to the light path) or cladding a waveguide (as in current electroabsorption modulator technology) to modulate the evanescent wave.
  • the magnitude of the transmission modulation is linear in the voltage modulation (Fig. 9), with proportionally higher modulation to be expected from higher modulation voltage, multilayer film, multi-pass geometry, or absorption enhancement via decoration with conductive nano structures.
  • Fig. 9 voltage modulation
  • c/f the speed of light in the medium of propagation and/the modulation frequency
  • Embodiments of the present invention provide photonic devices that achieve a significant light modulation on an unprecedentedly short optical path.
  • the modulator comprises a 2d SC 101 sandwiched between two electrodes 102, driven by an electric voltage signal 103, as depicted in Figure 1.
  • the electrodes are (semi)transparent or contain suitable openings for the transmission of light.
  • the modulator is built upon a transparent substrate 201 (Fig 2a).
  • the modulator is built upon one facet of a waveguide 202, such as an optical fibre (Fig. 2b).
  • a waveguide 202 such as an optical fibre
  • the fibre terminated with the device of Fig. 2b is connected to another fibre 204 touching the opposite electrode or an additional protective layer 203 (Fig. 2c).
  • a dielectric layer 301 is sandwiched between the 2d SC layer and at least one of the electrodes (Fig. 3a).
  • the dielectric can be, for example, a transparent oxide such as Hf0 2 or quartz, or a transparent polymer such as PMMA.
  • the purpose of the layer is to prevent charge injection into the 2d SC layer. Injected charges may screen the applied electric field and may cause changes in the transmission spectrum of the device. While screening is always unwanted, the charge-induced change in the transmission may in some cases be unwanted and in others desirable.
  • the 2d SC layer is completely covered by the dielectric (Fig 3b).
  • the dielectric protects the 2d SC from the environment (e.g. oxygen, water, etc).
  • one of the electrodes 401 or a subsequent layer is reflective (Fig. 4) to enable the use of the device in a reflection geometry.
  • the 2d SC layer is decorated on one or both sides with conductive nanostructures 501 (Fig. 5), such as nanocrystals, nanospheres, nanorods, nanowires, nanoribbons, nanoflakes, etc.
  • conductive nanostructures 501 such as nanocrystals, nanospheres, nanorods, nanowires, nanoribbons, nanoflakes, etc.
  • Their conductivity originates from their being metals, semimetals, zero-gap semiconductors, or doped semiconductors.
  • Conductive nanostructures lead to strong enhancement of local electric fields, which increases the light-matter interaction compared to a bare 2d SC sheet. A desired modulation depth can hence be achieved with a thinner sheet and/or lower voltage.
  • the 2d SC sheet is incorporated into a waveguide/resonator/optical cavity structure, such as, but not limited to, a Fabry-Perot interferometer, a distributed Bragg reflector, or a photonic crystal fibre.
  • a waveguide/resonator/optical cavity structure such as, but not limited to, a Fabry-Perot interferometer, a distributed Bragg reflector, or a photonic crystal fibre.
  • the EAM device is based on a field effect transistor whose channel is a monolayer (thickness 0.65 nm) of MoS 2 [Radisavljevic et al., Nature Nanotech. 6, 147 (2011), patent WO 2012093360].
  • MoS 2 is the most common material from the family of layered semiconducting transition metal dichalcogenides (TMDs), with the general formula MX 2 , where M is a transition metal (most commonly, but not exclusively Mo or W) and X is a chalcogen (S, Se, or Te).
  • the EAM device consists of a transparent (sapphire) substrate 701, a transparent gate electrode 702 (consisting of 50 nm of indium-tin-oxide) and a transparent gate dielectric 703 (30 nm of Hf0 2 ) sequentially deposited by Atomic Layer Deposition (ALD) onto the substrate.
  • ALD Atomic Layer Deposition
  • the monolayer MoS 2 flake 704 obtained from Chemical Vapor Deposition (CVD) on sapphire c-plane is transferred on top of the gate oxide by using PMMA (poly-methyl methacrylate) and KOH or PLLA (poly(L-lactic acid)) and PDMS (as a stamp).
  • Source 705 and drain 706 electrodes are deposited after electron-beam lithography.
  • the source electrode 705 is connected to the ground.
  • a voltage source 707 is connected to the gate electrode 702 and drives the EAM device.
  • a voltage source 708 and a current measuring device 709 can be connected to the drain electrode 706.
  • the drain electrode 706 is preferably connected to the ground.
  • the light that is being modulated by the device can either enter the device through the transparent gate 702 and exit through the gap between the source and drain electrodes or vice versa.
  • a dc offset and an ac modulation voltage are applied between the gate and the counter electrode.
  • a monolayer of M0S2 transmits approximately 93% of the incident light at the excitonic resonance around 650 nm.
  • the device illustrated in Figure 7 and described above achieved a modulation of the transmitted light by 0.5% at 650 nm (Fig. 8) with a peak-to-peak voltage modulation of 250 mV in the full range of dc voltage offsets where the device is off (i.e. no carriers are injected from the source and drain electrodes).
  • the magnitude of the transmission modulation is linear in the voltage modulation (Fig. 9), with proportionally higher modulation to be expected from higher modulation voltage, multilayer film, multi-pass geometry, or more devices in series.
  • the absorption spectrum might be additionally modified by charge carrier generation and sample heating.
  • a continuous wave fluence of 2 nW/ ⁇ 2 typical for the low power operation this device is aimed at, causes a relative change of the transmission of at most 6x 10 "5 [T. Borzda et al., Adv. Func. Mater. 25, 3351 (2015)], originating mostly from photogenerated charge carriers. Such effects are hence negligible compared to the electromodulation signal.
  • the 2d SC can be processed via liquid phase exfoliation [Nicolosi et al, Science 340, 1226419 (2013), patent WO2012101457] and deposited from dispersion in a suitable solvent via drop casting, dip casting, spin coating, spraying, or ink-jet printing. This holds great cost advantage compared to traditional EOM fabrication.
  • Other methods for obtaining mono- or multilayer 2d SCs include but are not limited to mechanical cleaving, chemical vapour deposition, transport reactions, and molecular beam epitaxy.
  • the wavelength region where the modulation is efficient is close to the band edge or excitonic resonances of the semiconductor.
  • Methods of tuning the bandgap and/or excitonic resonances include but are not limited to (uni- or bidirectional) stretching, temperature, the number of layers, and chemical doping.
  • FIG. 10 A series of laser diodes (1001) emits lights of different wavelengths ( ⁇ ⁇ ), each of which has a signal impressed on by a modulator (1002) according to one of the embodiments described above (e.g. Fig. 2b), which are suitable for the respective wavelengths, propagates in a photonic integrated circuit (1003), is demultiplexed (1004) and read out each by an individual photodetector (1005).
  • ⁇ ⁇ A series of laser diodes (1001) emits lights of different wavelengths ( ⁇ ⁇ ), each of which has a signal impressed on by a modulator (1002) according to one of the embodiments described above (e.g. Fig. 2b), which are suitable for the respective wavelengths, propagates in a photonic integrated circuit (1003), is demultiplexed (1004) and read out each by an individual photodetector (1005).

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

L'invention concerne un modulateur électro-optique, comprenant : un film monocouche ou multicouche de matériau semi-conducteur bidimensionnel ayant une structure de cristal stratifiée ; et des électrodes formées au niveau de chaque côté du matériau semi-conducteur, l'application d'un potentiel électrique auxdites électrodes et à travers ledit matériau semi-conducteur modulant le facteur de transmission de la lumière de certaines longueurs d'ondes en fonction de la tension. L'invention concerne également des dispositifs optiques et des circuits photoniques intégrés comprenant de tels modulateurs.
PCT/EP2016/082434 2016-01-12 2016-12-22 Modulateur électro-optique basé sur une structure de cristal à semi-conducteurs stratifiée WO2017121608A1 (fr)

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GB1600549.8A GB2546265B (en) 2016-01-12 2016-01-12 Electro-optical Modulator based on a layered semiconductor crystal structure

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