WO2017115441A1 - Mounting structure, image pickup device, and endoscope - Google Patents

Mounting structure, image pickup device, and endoscope Download PDF

Info

Publication number
WO2017115441A1
WO2017115441A1 PCT/JP2015/086568 JP2015086568W WO2017115441A1 WO 2017115441 A1 WO2017115441 A1 WO 2017115441A1 JP 2015086568 W JP2015086568 W JP 2015086568W WO 2017115441 A1 WO2017115441 A1 WO 2017115441A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
electronic component
temperature increase
rate
lands
Prior art date
Application number
PCT/JP2015/086568
Other languages
French (fr)
Japanese (ja)
Inventor
悠 柴山
Original Assignee
オリンパス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by オリンパス株式会社 filed Critical オリンパス株式会社
Priority to PCT/JP2015/086568 priority Critical patent/WO2017115441A1/en
Priority to JP2017558834A priority patent/JPWO2017115441A1/en
Publication of WO2017115441A1 publication Critical patent/WO2017115441A1/en

Links

Images

Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering

Definitions

  • the present invention relates to a mounting structure, an imaging device, and an endoscope.
  • endoscopes have been widely used for various examinations in the medical field and the industrial field.
  • medical endoscopes incise a subject by inserting an elongated flexible insertion portion having an imaging element at the tip into the body cavity of the subject such as a patient. At least an in-vivo image in the body cavity can be acquired.
  • endoscopes are widely used because treatment treatment can be performed by projecting a treatment tool from the distal end of the insertion portion as necessary.
  • An imaging module including a solid-state imaging device and a multilayer substrate on which electronic components such as a capacitor and an IC chip constituting a driving circuit of the solid-state imaging device are mounted is fitted at the distal end of the insertion portion of such an endoscope. Yes.
  • electronic components are connected to the multilayer substrate by soldering, the electronic components are heated to a higher temperature than the lands of the multilayer substrate by heating, and the molten solder is gathered and bonded to the lower part of the electronic components, that is, inside the lands.
  • a fillet is not formed on the side surface of the electrode, and connection reliability may be insufficient.
  • Patent Document 1 is a technique for connecting an insulating container to a land of a printed circuit board, and has a problem regarding fillet formation when an electronic component is connected to a circuit board, that is, a problem that connection reliability is insufficient. It does not solve.
  • the present invention has been made in view of the above, and an object thereof is to provide a mounting structure, an imaging apparatus, and an endoscope that can be miniaturized and have high connection reliability.
  • a mounting structure includes an electronic component having two electrodes formed in continuous regions on the bottom surface and side surfaces, and the electronic component mounted by soldering.
  • a board having a pair of lands, wherein the lands have two or more regions having different temperature rise rates per unit time, and are exposed without being hidden by the mounted electronic component.
  • the region where the temperature increase rate is high is wider than the region where the temperature increase rate is low.
  • the length at which the ridge line portion formed by the bottom surface and the side surface constituting the electrode is mounted has a higher temperature increase rate in the region where the temperature increase rate is higher. It is characterized by being longer than the low region.
  • the mounting structure according to the present invention is the mounting structure according to the present invention, wherein the electronic component has a prismatic shape, the electrodes are arranged at both ends in the longitudinal direction, and the region where the temperature rise rate is high is the electronic component of the land. The region where the temperature rise rate is low is disposed in a region inside the end surface of the electronic component in the short direction of the land. To do.
  • the electronic component has a prismatic shape
  • the electrodes are disposed at both ends in the longitudinal direction
  • the region having a low temperature increase rate is disposed inside the land.
  • the region where the temperature increase rate is high is an outer peripheral region of the land, and is arranged so as to surround the region where the temperature increase rate is low.
  • the mounting structure according to the present invention is characterized in that, in the above invention, the region having a high temperature increase rate is made of a material having a higher thermal conductivity than the region having a low temperature increase rate.
  • the mounting structure according to the present invention is characterized in that, in the above invention, the land is made of copper in a region where the temperature increase rate is high, and aluminum in a region where the temperature increase rate is low, and has a gold plating layer on the surface.
  • the region where the temperature increase rate is high and the region where the temperature increase rate is low are made of the same material, and the region where the temperature increase rate is high is the temperature increase rate. It is characterized in that the thickness is thinner than that of the low region.
  • an imaging device includes a mounting structure according to any one of the above, an imaging device connected to a substrate of the mounting structure, and converting light incident from the outside into an electrical signal; And an optical system that makes the collected light incident on the imaging device.
  • an endoscope according to the present invention includes the above-described imaging device, and an insertion portion that has a cylindrical tip portion formed of a hard member and can be inserted into a subject.
  • a fillet having a sufficient connection strength is formed on the electrode side surface of an electronic component, and an area required for connection of the electronic component can be reduced, so that high-density mounting is possible, and the imaging apparatus and endoscope Can be miniaturized.
  • FIG. 1 is a diagram schematically illustrating the overall configuration of the endoscope system according to the first embodiment of the present invention.
  • FIG. 2 is a partial cross-sectional view of the distal end of the endoscope shown in FIG.
  • FIG. 3 is a top view of the imaging apparatus shown in FIG. 4 is a cross-sectional view taken along line AA in FIG. 5 is a cross-sectional view taken along line BB in FIG.
  • FIG. 6 is a top view of the land.
  • FIG. 7 is a top view of the land according to the second embodiment. 8 is a cross-sectional view taken along the line CC of FIG.
  • FIG. 9 is a top view of the land when the electronic component according to the third embodiment is mounted.
  • FIG. 1 is a diagram schematically illustrating the overall configuration of the endoscope system according to the first embodiment of the present invention.
  • FIG. 2 is a partial cross-sectional view of the distal end of the endoscope shown in FIG.
  • FIG. 3 is a
  • FIG. 10 is a top view of the land when the electronic component according to the fourth embodiment is mounted.
  • FIG. 11 is a top view of the land when the electronic component according to the fifth embodiment is mounted.
  • FIG. 12 is a top view of the land when the electronic component according to the sixth embodiment is mounted.
  • FIG. 13 is a top view of the land when the electronic component according to the seventh embodiment is mounted.
  • 14 is a cross-sectional view taken along the line EE of FIG.
  • FIG. 15 is a cross-sectional view of a land when the electronic component according to the eighth embodiment is mounted.
  • an endoscope provided with an imaging device will be described as a mode for carrying out the present invention (hereinafter referred to as “embodiment”). Moreover, this invention is not limited by this embodiment. Furthermore, the same code
  • FIG. 1 is a diagram schematically illustrating the overall configuration of the endoscope system according to the first embodiment of the present invention.
  • the endoscope system 1 includes an endoscope 2, a universal cord 3, a connector 5, a processor (control device) 6, a display device 7, and a light source device 8.
  • the endoscope 2 captures an in-vivo image of the subject and outputs an imaging signal by inserting the insertion unit 30 into the body cavity of the subject.
  • the electric cable bundle inside the universal cord 3 extends to the distal end of the insertion portion 30 of the endoscope 2 and is connected to an imaging device provided at the distal end portion 3 ⁇ / b> A of the insertion portion 30.
  • the connector 5 is provided at the base end of the universal cord 3 and is connected to the light source device 8 and the processor 6, and performs predetermined signal processing on the imaging signal output from the imaging device of the distal end portion 3 ⁇ / b> A connected to the universal cord 3.
  • the image pickup signal is converted from analog to digital (A / D conversion) and output as an image signal.
  • the light source device 8 is configured using, for example, a white LED.
  • the pulsed white light that is turned on by the light source device 8 becomes illumination light that is irradiated toward the subject from the distal end of the insertion portion 30 of the endoscope 2 via the connector 5 and the universal cord 3.
  • the processor 6 performs predetermined image processing on the image signal output from the connector 5 and controls the entire endoscope system 1.
  • the display device 7 displays the image signal processed by the processor 6.
  • the operation part 4 provided with various buttons and knobs for operating the endoscope function is connected to the proximal end side of the insertion part 30 of the endoscope 2.
  • the operation unit 4 is provided with a treatment instrument insertion port 4a for inserting a treatment instrument such as a biological forceps, an electric knife and an inspection probe into the body cavity of the subject.
  • the insertion section 30 is connected to the distal end portion 3A where the imaging device is provided, the bending portion 3B which is connected to the proximal end side of the distal end portion 3A and is bendable in a plurality of directions, and the proximal end side of the bending portion 3B. And the flexible tube portion 3C.
  • the bending portion 3B is bent by the operation of a bending operation knob provided in the operation portion 4, and can be bent in four directions, for example, up, down, left, and right as the bending wire inserted through the insertion portion 30 is pulled or loosened. Yes.
  • the endoscope 2 is provided with a light guide bundle (not shown) that transmits illumination light from the light source device 8, and an illumination lens (not shown) is disposed at an emission light emitting end of the light guide bundle.
  • This illumination lens is provided at the distal end portion 3A of the insertion portion 30, and the illumination light is irradiated toward the subject.
  • FIG. 2 is a partial cross-sectional view of the distal end of the endoscope 2.
  • 2 is a cross-sectional view taken along a plane that is orthogonal to the substrate surface of the imaging device provided at the distal end portion 3A of the endoscope 2 and is parallel to the optical axis direction of the imaging device. is there.
  • a distal end portion 3A of the insertion portion 30 of the endoscope 2 and a part of the bending portion 3B are illustrated.
  • the bending portion 3B can be bent in four directions, up, down, left and right, as the bending wire 82 inserted into the bending tube 81 disposed inside the later-described cladding tube 42 is pulled and loosened.
  • An imaging device 35 is provided inside the distal end portion 3A extending to the distal end side of the curved portion 3B.
  • the imaging device 35 includes a lens unit 43 and an imaging unit 40 disposed on the proximal end side of the lens unit 43, and is adhered to the inside of the distal end portion main body 41 with an adhesive 41a.
  • the tip end body 41 is formed of a hard member for forming an internal space for accommodating the imaging device 40.
  • the proximal end outer peripheral portion of the distal end portion main body 41 is covered with a flexible cladding tube 42.
  • the member on the base end side with respect to the distal end portion main body 41 is configured by a flexible member so that the bending portion 3B can be bent.
  • positioned become a hard part of the insertion part 30.
  • the lens unit 43 includes a plurality of objective lenses 43a-1 to 43a-4 and a lens holder 43b that holds the objective lenses 43a-1 to 43a-4.
  • the tip of the lens holder 43b is the tip portion main body 41. It is fixed to the tip end body 41 by being inserted and fixed inside.
  • the imaging unit 40 receives light from a CCD or CMOS, etc., and performs photoelectric conversion to generate an electrical signal, and the back side facing the light receiving surface on which the light receiving portion 44a of the solid state imaging device 44 is formed.
  • a flexible printed circuit board 45 (hereinafter referred to as “FPC board 45”) extending to the surface of the FPC board 45, a multilayer board 46 having a plurality of conductor layers connected to the surface of the FPC board 45, and a solid-state image sensor 44 covering the light-receiving surface.
  • a glass lid 49 that adheres to the image sensor 44 is provided.
  • the multilayer substrate 46 of the imaging unit 40 is mounted with electronic components 55 to 57 which are active components and passive components that constitute the drive circuit of the solid-state imaging device 44, and is electrically connected to a plurality of conductor layers (not shown) inside. Vias to be formed are formed. Further, the laminated substrate 46 is formed with an external electrode 63 for connecting the distal ends of the signal cables 48 of the electric cable bundle 47 on the base end side (see FIG. 3).
  • each signal cable 48 extends in the base end direction of the insertion portion 30.
  • the electric cable bundle 47 is inserted into the insertion portion 30 and extends to the connector 5 via the operation portion 4 and the universal cord 3 shown in FIG.
  • the subject images formed by the objective lenses 43a-1 to 43a-4 of the lens unit 43 are detected by the solid-state imaging device 44 provided at the imaging positions of the objective lenses 43a-1 to 43a-4, and imaged. Converted to a signal.
  • the imaging signal is output to the processor 6 via the signal cable 48 and the connector 5 connected to the FPC board 45 and the laminated board 46.
  • the solid-state imaging device 44 is bonded to the side surface of the multilayer substrate 46 via the adhesive 54a on the back side facing the light receiving surface on which the light receiving portion 44a is formed.
  • the solid-state image sensor 44 and the outer periphery of the side surface of the solid-state image sensor 44 are covered with a metal reinforcing member 52.
  • the reinforcing member 52 is installed apart from the solid-state imaging device 44, the FPC substrate 45, and the multilayer substrate 46.
  • the outer ends of the image pickup unit 40 and the tip end portion of the electric cable bundle 47 are covered with a heat shrinkable tube 50 in order to improve resistance. Inside the heat shrinkable tube 50, a gap between components is filled with an adhesive resin 51.
  • the solid-state image sensor holder 53 holds the solid-state image sensor 44 that adheres to the glass lid 49 by fitting the outer peripheral surface of the glass lid 49 to the inner peripheral surface of the base end side of the solid-state image sensor holder 53.
  • the proximal end side outer peripheral surface of the solid-state image sensor holder 53 is fitted to the distal end side inner peripheral surface of the reinforcing member 52.
  • the base end side outer peripheral surface of the lens holder 43 b is fitted to the front end side inner peripheral surface of the solid-state image sensor holder 53.
  • the outer peripheral surface of the lens holder 43b, the outer peripheral surface of the solid-state imaging device holder 53, and the outer peripheral surface of the distal end side of the heat shrinkable tube 50 are bonded to the distal end portion main body 41 by the adhesive 41a. It is fixed to the inner peripheral surface of the tip.
  • FIG. 3 is a top view of the imaging device 35 shown in FIG. 4 is a cross-sectional view taken along line AA in FIG. 5 is a cross-sectional view taken along line BB in FIG.
  • FIG. 6 is a top view of the land.
  • the lens unit 43 and the signal cable 48 are not shown.
  • lands 60-1, 60-2, 61-1, 61-2, 62-1 and 62-2 on which electronic components 55, 56 and 57 are mounted are formed on the upper surface of the multilayer substrate 46. Is formed.
  • the electronic components 55 to 57 have a prismatic shape and have electrodes 55a-1, 55a-2, 56a-1, 56a-2, 57a-1, and 57a-2 at both ends in the longitudinal direction.
  • the electrodes 55a-1 and 55a-2 of the electronic component 55 are connected to the pair of lands 60-1 and 60-2 by solder 58, and the electrodes 56a-1 and 56a-2 of the electronic component 56 are connected to the pair of lands 61- 1 and 61-2 are connected by solder 58, and electrodes 57a-1 and 57a-2 of the electronic component 57 are connected by a solder 58 to a pair of lands 62-1 and 62-2.
  • the electronic components 55, 56, and 57 are not limited to the prismatic shape as shown in FIG. 4, and may be, for example, those having round corners.
  • the lands 60-1 and 60-2 have two regions 601 and 602 having different temperature increase rates per unit time when the solder is heated, and the temperature increase rate is high.
  • the high region 601 is mainly disposed outside the region where the electronic component 55 is placed, that is, the region outside the end surface f1 in the longitudinal direction of the electronic component 55 in the lands 60-1 and 60-2.
  • the region 602 with a low temperature rise rate is mainly disposed in a region where the electronic component 55 is placed, that is, in a region inside the end surface f1 in the longitudinal direction of the electronic component 55 in the lands 60-1 and 60-2.
  • the region 601 with a high temperature increase rate is wider than the region 602 with a low temperature increase rate.
  • the length mounted on the lands 60-1 and 60-2 is the length of the ridge line A in the region 601 where the temperature increase rate is high. This is longer than the ridgeline B in the region 602 where the temperature increase rate is low.
  • the mounting position of the electronic component 55 is indicated by a dotted line, and the ridge line A in the region 601 where the temperature increase rate is high among the ridge line portion constituted by the bottom surface and the side surface of the electrode 55 a-2 is indicated by a dashed line.
  • the ridge line B in the region 602 where the rate is low is indicated by a two-dot broken line.
  • the solder 58 is melted by heating so that the electronic component 55 is
  • the temperature of the region 601 with the high rate of temperature increase first increases the solder 58 in the region 601 and the electronic component 55 Fillets are likely to be formed on the end surfaces f1 of the electrodes 55a-1 and 55a-2, and on the side surfaces of some end surfaces f2 and f3. Thereby, the reliability of the connection between the electronic component 55 and the lands 60-1 and 60-2 can be improved.
  • the fillet height can be increased by allowing the solder 58 to exist outside the region where the electronic component 55 is placed, that is, outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60-1 and 60-2.
  • the length in the longitudinal direction of the electronic component 55 in the region 601 where the temperature rise rate is high is preferably 50% or less, and more preferably 30% or less.
  • the length 601 of the electronic component 55 in the longitudinal direction of the region 601 where the temperature rise rate is high is preferable that the length d3 in the longitudinal direction of the electronic component 55 in the region 602 where the temperature increase rate is low is substantially the same.
  • the region 601 having a high temperature increase rate is formed from a material having a higher thermal conductivity than the region 602 having a low temperature increase rate.
  • a region having a high temperature increase rate is formed from copper and a region having a low temperature increase rate is formed from aluminum.
  • a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602.
  • the lands 60-1 and 60-2 on which the electronic component 55 is mounted have been described.
  • the lands 61-1, 61-2, 62-1, and 62-2 on which the electronic components 56 and 57 are mounted are also included in the land 60.
  • the two regions 601 and 602 having different temperature rise rates per unit time, and the region 601 having a high temperature rise rate is mainly outside the region where the electronic components 56 and 57 are placed.
  • the lands 61-1, 61-2, 62-1, and 62-2 are mainly disposed in a region outside the end face f1 in the longitudinal direction of the electronic components 56 and 57.
  • FIG. 7 is a top view of the land according to the second embodiment.
  • 8 is a cross-sectional view taken along the line CC of FIG.
  • the region 601 having a high temperature rise rate is mainly disposed in a region outside the end surface of the electronic component 55 in the short direction.
  • the same materials as those in Embodiment 1 can be used for the region 601 with a high temperature increase rate and the region 602 with a low temperature increase rate.
  • a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
  • the region 601 where the temperature rise rate is high is mainly disposed outside the region where the electronic component 55 is placed, that is, the region outside the end faces f2 and f3 in the short direction of the electronic component 55 in the lands 60A-1 and 60A-2.
  • the region 602 having a low temperature rise rate is mainly disposed in a region where the electronic component 55 is placed, that is, in a region inside the end surfaces f2 and f3 in the short direction of the electronic component 55 in the lands 60A-1 and 60A-2. Yes.
  • the lands 60A-1 and 60A-2 three regions are formed in parallel in the short direction of the electronic component 55.
  • the three regions include two regions 601 having a high rate of temperature rise, and 1
  • the two temperature increase rates are two regions 602, and the two high temperature increase rates region 601 are arranged so as to sandwich the low temperature increase rate region 602 and are hidden by the electronic component 55 after the electronic component 55 is mounted.
  • the lands 60A-1 and 60A-2 that are exposed without being exposed are only the region 601 having a high temperature rise rate.
  • the region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
  • the region 601 having a high temperature rise rate is mainly disposed in a region outside the end faces f2 and f3 in the short direction of the electronic component 55 in the lands 60A-1 and 60A-2.
  • the temperature of the region 601 where the rate of temperature increase is high first, so that the solder 58 gathers in the region 601 and the electrodes 55a-1, 55a of the electronic component 55 are collected.
  • -2 tends to form fillets on the side surfaces of the end surfaces f2 and f3. Thereby, the reliability of the connection between the electronic component 55 and the lands 60A-1 and 60A-2 can be improved.
  • the fillet height is increased. Can be high.
  • the length in the short direction of the electronic component 55 in the region 601 where the temperature rise rate is high.
  • the length d5 of the lower part of the electronic component 55 in the region 601 where the temperature rise rate is high with respect to the length d4 is preferably 50% or less, and more preferably 30% or less.
  • the length d6 in the short direction of the electronic component 55 in the region 602 with a low rate of temperature rise is preferably substantially the same as the length d4 in the short direction of the electronic component 55 in the region 601 where the increase rate is high.
  • the end surfaces in the longitudinal direction of the electronic components 55 of the lands 60A-1 and 60A-2 are formed so as to be aligned with the end surfaces f1 in the longitudinal direction of the electronic components 55. Therefore, the length required in the longitudinal direction of the electronic component 55 of the lands 60A-1 and 60A-2 required for mounting the electronic component 55 can be shortened, and high-density mounting in the longitudinal direction of the electronic component 55 becomes possible.
  • FIG. 9 is a top view of a land when the electronic component 55 according to the third embodiment is mounted.
  • the region 601 where the temperature rise rate is high is outside the end surface in the longitudinal direction of the electronic component 55 and the short side of the electronic component 55. It is mainly disposed in a region outside the end face in the direction.
  • the same materials as those in Embodiment 1 can be used for the region 601 with a high temperature increase rate and the region 602 with a low temperature increase rate.
  • a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
  • the region 601 having a high temperature rise rate is mainly disposed in the lands 60B-1 and 60B-2 outside the longitudinal end face f1 of the electronic component 55 and outside the lateral end faces f2 and f3.
  • the region 602 where the rate of temperature increase is low is mainly in the region where the electronic component 55 is placed, that is, on the lands 60B-1 and 60B-2, inside the longitudinal end surface f1 of the electronic component 55 and in the short side end surface f2. It is arranged in a region inside f3.
  • the lands 60B-1 and 60B-2 are arranged so that the region 601 having a high temperature increase rate surrounds the region 602 having a low temperature increase rate in a U shape, and after the electronic component 55 is mounted.
  • the lands 60B-1 and 60B-2 exposed without being hidden by the electronic component 55 are only the region 601 having a high temperature rise rate.
  • the region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
  • the region 601 having a high rate of temperature rise mainly in the regions outside the end surfaces f1 and f3 in the short direction and outside the end surfaces f2 and f3 in the short direction in the lands 60B-1 and 60B-2 By disposing the region 601 having a high rate of temperature rise mainly in the regions outside the end surfaces f1 and f3 in the short direction and outside the end surfaces f2 and f3 in the short direction in the lands 60B-1 and 60B-2, the temperature of the region 601 where the temperature rise rate is high first increases, so that the solder 58 gathers in the region 601 and the electrons Fillets are likely to be formed on the side surfaces of the electrodes 55a-1, 55a-2 of the component 55 on the side of the end faces f1, f2, f3. Thereby, the reliability of the connection between the electronic component 55 and the lands 60B-1 and 60B-2 can be improved.
  • Solder 58 is placed outside the area where electronic component 55 is placed, that is, outside land 50B-1 and 60B-2, outside end surface f1 in the longitudinal direction of electronic component 55 and outside end surfaces f2 and f3 in the short direction. By making it mainly exist, the height of the fillet can be increased. In order to make many solders 58 exist in places other than the lower portions of the electrodes 55a-1 and 55a-2 in the region 601 where the temperature rise rate is high, the length in the longitudinal direction of the electronic component 55 in the region 601 where the temperature rise rate is high.
  • the length d2 in the longitudinal direction of the lower part of the electronic component 55 in the region 601 with a high temperature rise rate with respect to d1 is preferably 50% or less, and more preferably 30% or less. Further, the length d5 in the short direction of the lower part of the electronic component 55 in the region 601 with a high temperature rise rate is 50% or less with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature rise rate. It is preferably 30% or less.
  • Solder 58 is placed outside the area where electronic component 55 is placed, that is, outside lands 60B-1 and 60B-2, outside end surface f1 in the longitudinal direction of electronic component 55 and outside end surfaces f2 and f3 in the short direction.
  • the length d3 in the longitudinal direction of the electronic component 55 in the region 602 with a low rate of temperature rise relative to the length d1 in the longitudinal direction of the electronic component 55 in the region 601 with a high temperature rise rate is 100% or more and 150%. The following is preferable.
  • the length d6 in the short direction of the electronic component 55 in the region 602 with a low temperature increase rate with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature increase rate is 100% or more and 300% or less. Preferably there is.
  • FIG. 10 is a top view of a land when the electronic component 55 according to the fourth embodiment is mounted.
  • the region 601 having a high temperature increase rate is disposed so as to surround the region 602 having a low temperature increase rate.
  • the same materials as those in Embodiment 1 can be used for the region 601 with a high temperature increase rate and the region 602 with a low temperature increase rate.
  • a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
  • the region 601 having a high temperature increase rate is disposed in the outer peripheral region of the lands 60C-1 and 60C-2, and the region 602 having a low temperature increase rate is disposed inside the lands 60C-1 and 60C-2. That is, the region 601 with a high temperature rise rate is arranged so as to surround the region 602 with a low temperature rise rate, and the land 60C-1 exposed without being hidden by the electronic component 55 after the electronic component 55 is mounted. , 60C-2 is only the region 601 where the temperature rise rate is high. The region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
  • the solder 58 When the region 601 having a high temperature rise rate is arranged in the outer peripheral region of the lands 60C-1 and 60C-2, the solder 58 is melted by heating to connect the electronic component 55 to the lands 60C-1 and 60C-2.
  • the temperature of the region 601 where the rate of temperature increase is high first the solder 58 gathers in the region 601 and is formed on the side surfaces of the end surfaces f1, f2, f3, and f4 of the electrodes 55a-1 and 55a-2 of the electronic component 55. Fillets are easily formed. Thereby, the reliability of the connection between the electronic component 55 and the lands 60C-1 and 60C-2 can be improved.
  • the fillet height can be increased.
  • the length d2 in the longitudinal direction of the lower part of the electronic component 55 is preferably 50% or less, and more preferably 30% or less.
  • the length d5 in the short direction of the lower part of the electronic component 55 in the region 601 with a high temperature rise rate is 50% or less with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature rise rate. It is preferably 30% or less.
  • Solder 58 is placed outside the area where electronic component 55 is placed, that is, outside lands 60C-1 and 60C-2, outside end surface f1 in the longitudinal direction of electronic component 55 and outside end surfaces f2 and f3 in the short direction.
  • the length d3 in the longitudinal direction of the electronic component 55 in the region 602 with a low rate of temperature rise relative to the length d1 in the longitudinal direction of the electronic component 55 in the region 601 with a high temperature rise rate is 50% or more and 100%. The following is preferable.
  • the length d6 in the short direction of the electronic component 55 in the region 602 with a low temperature increase rate with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature increase rate is 100% or more and 300% or less. Preferably there is.
  • FIG. 11 is a top view of a land when the electronic component 55 according to the fifth embodiment is mounted.
  • the region 601 where the rate of temperature rise is high is mainly inside the longitudinal end surface f4 of the electronic component 55 and the electronic component 55. It is mainly arranged in a region outside the end faces f2, f3 in the short direction.
  • the same materials as those in the first embodiment can be used for the region 601 having a high temperature increase rate and the region 602 having a low temperature increase rate.
  • a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
  • the region 601 having a high temperature rise rate is mainly inside the longitudinal end face f4 of the electronic component 55 in the lands 60D-1 and 60D-2 (center side of the electronic component 55) and outside the end faces f2 and f3 in the short direction. Located mainly in the area.
  • the region 602 where the rate of temperature rise is low is mainly in the region where the electronic component 55 is placed, that is, on the lands 60D-1 and 60D-2, inside the longitudinal end surface f1 of the electronic component 55 and in the short side end surface f2. It is arranged in a region inside f3.
  • the lands 60D-1 and 60D-2 are arranged so that the region 601 having a high temperature increase rate surrounds the region 602 having a low temperature increase rate in a U shape (the opening side is opposite to that of the third embodiment).
  • the lands 60D-1 and 60D-2 that are exposed without being hidden by the electronic component 55 after the electronic component 55 is mounted are only the region 601 having a high temperature rise rate.
  • the region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
  • the region 601 having a high temperature rise rate mainly in the region inside the longitudinal end surface f4 of the electronic component 55 and outside the lateral end surfaces f2, f3 in the lands 60D-1 and 60D-2 By disposing the region 601 having a high temperature rise rate mainly in the region inside the longitudinal end surface f4 of the electronic component 55 and outside the lateral end surfaces f2, f3 in the lands 60D-1 and 60D-2, When the solder 58 is melted by heating and the electronic component 55 is connected to the lands 60D-1 and 60D-2, the temperature of the region 601 where the temperature rise rate is high first increases, so that the solder 58 gathers in the region 601 and Fillets are likely to be formed on the side surfaces of the electrodes 55a-1, 55a-2 of the component 55 on the side of the end faces f2, f3, f4. Thereby, the reliability of the connection between the electronic component 55 and the lands 60D-1 and 60D-2 can be improved.
  • Solder 58 is located outside the area where electronic component 55 is placed, that is, in the land 60D-1, 60D-2, inside the longitudinal end surface f4 of electronic component 55 and outside the lateral end surfaces f2, f3. By making it mainly exist, the height of the fillet can be increased.
  • the length in the longitudinal direction of the electronic component 55 in the region 601 where the temperature rise rate is high is preferably 50% or less, and more preferably 30% or less.
  • the length d5 in the short direction of the lower part of the electronic component 55 in the region 601 with a high temperature rise rate is 50% or less with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature rise rate. It is preferably 30% or less.
  • Solder 58 is placed outside the area where electronic component 55 is placed, that is, inside lands 60D-1 and 60D-2, inside end surface f4 in the longitudinal direction of electronic component 55 and outside end surfaces f2 and f3 in the short direction.
  • the length d3 in the longitudinal direction of the electronic component 55 in the region 602 with a low temperature rise rate relative to the length d1 in the longitudinal direction of the electronic component 55 in the region 601 with a high temperature rise rate is 150% or more and 200%. The following is preferable.
  • the length d6 in the short direction of the electronic component 55 in the region 602 with a low temperature increase rate with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature increase rate is 100% or more and 300% or less. Preferably there is.
  • FIG. 12 is a top view of a land when the electronic component 55 according to the sixth embodiment is mounted.
  • the region 601 having a high temperature rise rate is mainly disposed in a region outside the end face in the longitudinal direction of the electronic component 55,
  • the end surfaces in the short direction of the electronic components 55 of 60E-1 and 60E-2 are formed so as to be aligned with the end surfaces f2 and f3 of the electronic components 55 in the short direction.
  • the same materials as those in Embodiment 1 can be used for the region 601 with a high temperature increase rate and the region 602 with a low temperature increase rate.
  • a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
  • the region 601 where the temperature rise rate is high is mainly disposed outside the region where the electronic component 55 is placed, that is, the region outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60E-1 and 60E-2.
  • the region 602 where the rate of temperature rise is low is mainly disposed in the region where the electronic component 55 is placed, that is, in the region inside the longitudinal end face f1 of the electronic component 55 in the lands 60E-1 and 60E-2.
  • the lands 60E-1 and 60E-2 which are exposed without being hidden by the electronic component 55 after the 55 is mounted are only the region 601 where the temperature rise rate is high.
  • the region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
  • the solder 58 is melted by heating, so that the electronic component 55 is When connecting to the lands 60E-1 and 60E-2, the temperature of the region 601 where the rate of temperature increase is high first, so that the solder 58 gathers in the region 601 and the electrodes 55a-1 and 55a-2 of the electronic component 55 are connected. Fillets are easily formed on the side surface on the end face f1 side. Thereby, the reliability of the connection between the electronic component 55 and the lands 60E-1 and 60E-2 can be improved.
  • the fillet height can be increased.
  • the length in the longitudinal direction of the electronic component 55 in the region 601 where the temperature rise rate is high is preferably 50% or less, and more preferably 30% or less.
  • the short-side end surfaces of the electronic components 55 of the lands 60E-1 and 60E-2 are aligned with the long-side end surfaces f2 and f3 of the electronic components 55. Therefore, the length required in the short direction of the electronic component 55 of the lands 60E-1 and 60E-2 required for mounting the electronic component 55 can be shortened, and high-density mounting in the short direction of the electronic component 55 becomes possible.
  • FIG. 13 is a top view of a land when the electronic component 55 according to the seventh embodiment is mounted.
  • 14 is a cross-sectional view taken along the line EE of FIG.
  • the lands 60F-1 and 60F-2 on which the electronic component 55 is mounted have three regions with different temperature rise rates.
  • the lands 60F-1 and 60F-2 have three regions formed in parallel in the longitudinal direction of the electronic component 55.
  • the three regions include a region 601 having a high temperature increase rate and a region 602 having a low temperature increase rate.
  • the region 604 has a medium temperature increase rate, and the region 601, region 604, and region 602 are arranged in order of increasing temperature increase rate from the outside of the lands 60F-1 and 60F-2, and the electronic component 55 is mounted.
  • the areas of the lands 60F-1 and 60F-2 that are exposed without being hidden by the electronic component 55 are higher in the region 601 having a higher temperature increase rate and in the region 602 having a lower temperature increase rate or a medium temperature increase rate. It is wider than the area 604.
  • the region 601 having a high temperature increase rate, the region 604 having a medium temperature increase rate, and the region 602 having a low temperature increase rate are formed of, for example, copper, aluminum, or brass. Further, a gold plating layer 603 that improves conductivity is formed on the surfaces of the regions 601, 604, and 602.
  • the solder 58 is melted by heating and moved to a region having a high temperature.
  • the position shift of the electronic component 55 can be prevented.
  • the region 601, the region 604, and the region 602 are arranged in descending order of the temperature increase rate from the outside, so that the solder 58 is melted by heating and the electronic component 55 is replaced with the land 60F-1.
  • the solder 58 gathers in the outer region 601 where the rate of temperature rise is high, and a fillet is easily formed on the side surface of the electrodes 55a-1 and 55a-2 of the electronic component 55 on the side of the end surface f1.
  • the reliability of the connection between the electronic component 55 and the lands 60F-1 and 60F-2 can be improved.
  • the fillet height can be increased by making the solder 58 mainly exist in a region outside the end face f1 in the longitudinal direction of the electronic component 55.
  • FIG. 15 is a cross-sectional view of the land when the electronic component 55 according to the eighth embodiment is mounted.
  • the region 601 ′ having a high temperature increase rate is made of the same material as the region 602 ′ having a low temperature increase rate, for example, copper.
  • the thickness h1 of the region 601 ′ having a high temperature increase rate is formed thinner than the thickness h2 of the region 602 ′ having a low temperature increase rate.
  • a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 ′ and 602 ′ as in the first embodiment.
  • the lands 60G-1 and 60G-2 have two regions 601 ′ and 602 ′ having different temperature rise rates per unit time when viewed from the top during heating, and the region 601 ′ having a high temperature rise rate is mainly an electronic component.
  • 55 is mainly disposed outside the area where 55 is placed, that is, outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60G-1 and 60G-2.
  • the region 602 ′ having a low temperature rise rate is mainly disposed in a region where the electronic component 55 is placed, that is, in a region inside the end surface f1 in the longitudinal direction of the electronic component 55 in the lands 60G-1 and 60G-2. .
  • the region 601 ′ having a high temperature rise rate is mainly disposed in a region outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60G-1 and 60G-2, so that the solder 58 is melted by heating and the electronic component 55 is heated.
  • the temperature of the region 601 ′ having a high rate of temperature rise first increases, so that the solder 58 gathers in the region 601 ′, and the electrodes 55a-1, 55a of the electronic component 55
  • the fillet is easily formed on the side surface of the end surface f1. Thereby, the reliability of the connection between the electronic component 55 and the lands 60G-1 and 60G-2 can be improved.

Abstract

To provide a mounting structure, which enables size reduction, and has high connection reliability, an image pickup device, and an endoscope. A mounting structure of the present invention is characterized by being provided with: an electronic component 55, which has a prismatic shape, and has electrodes 55a-1, 55a-2 on both ends in the longitudinal direction; and a laminated board 46 that is provided with a pair of lands 60-1, 60-2, on which the electronic component 55 is mounted using a solder 58. The mounting structure is also characterized in that: each of the lands 60-1, 60-2 has two regions 601, 602 having different temperature rates per unit time; and the region 601 having a high temperature increase rate is disposed outside of a region where the electronic component 55 is mainly placed.

Description

実装構造体、撮像装置および内視鏡Mounting structure, imaging device, and endoscope
　本発明は、実装構造体、撮像装置および内視鏡に関する。 The present invention relates to a mounting structure, an imaging device, and an endoscope.
　従来、医療分野および工業分野において、各種検査のために内視鏡が広く用いられている。このうち、医療用の内視鏡は、患者等の被検体の体腔内に、先端に撮像素子が設けられた細長形状をなす可撓性の挿入部を挿入することによって、被検体を切開せずとも体腔内の体内画像を取得できる。さらに、内視鏡は、必要に応じて挿入部先端から処置具を突出させて治療処置を行うことができるため、広く用いられている。 Conventionally, endoscopes have been widely used for various examinations in the medical field and the industrial field. Among these, medical endoscopes incise a subject by inserting an elongated flexible insertion portion having an imaging element at the tip into the body cavity of the subject such as a patient. At least an in-vivo image in the body cavity can be acquired. Furthermore, endoscopes are widely used because treatment treatment can be performed by projecting a treatment tool from the distal end of the insertion portion as necessary.
　このような内視鏡の挿入部先端には、固体撮像素子と、該固体撮像素子の駆動回路を構成するコンデンサやＩＣチップ等の電子部品が実装された積層基板を含む撮像モジュールが嵌め込まれている。積層基板に電子部品を半田により接続する際、加熱により電子部品の方が積層基板のランドより高温となり、溶融した半田が電子部品の下部、すなわちランド間の内側に集まって接合され、電子部品の電極の側面にフィレットが形成されず、接続の信頼性が不十分となる場合がある。 An imaging module including a solid-state imaging device and a multilayer substrate on which electronic components such as a capacitor and an IC chip constituting a driving circuit of the solid-state imaging device are mounted is fitted at the distal end of the insertion portion of such an endoscope. Yes. When electronic components are connected to the multilayer substrate by soldering, the electronic components are heated to a higher temperature than the lands of the multilayer substrate by heating, and the molten solder is gathered and bonded to the lower part of the electronic components, that is, inside the lands. A fillet is not formed on the side surface of the electrode, and connection reliability may be insufficient.
　半田接続による信頼性を向上する技術として、プリント基板のランドの対向する内側端部を接続する絶縁容器の電極の内側端部より外側に設けることにより、フィレット形状を制御する技術が開示されている（例えば、特許文献１参照）。 As a technique for improving the reliability by solder connection, a technique for controlling the fillet shape by providing the printed circuit board land on the outer side than the inner end of the electrode of the insulating container connecting the opposite inner ends is disclosed. (For example, refer to Patent Document 1).
特開２０１４－１１０３７０号公報JP 2014-110370 A
　しかしながら、特許文献１は、絶縁容器をプリント基板のランドに接続する際の技術であり、電子部品を基板に接続する際のフィレット形成に関する問題、すなわち接続の信頼性が不十分であるという問題を解決するものではない。 However, Patent Document 1 is a technique for connecting an insulating container to a land of a printed circuit board, and has a problem regarding fillet formation when an electronic component is connected to a circuit board, that is, a problem that connection reliability is insufficient. It does not solve.
　本発明は、上記に鑑みてなされたものであって、小型化可能であって、接続の信頼性の高い実装構造体、撮像装置および内視鏡を提供することを目的とする。 The present invention has been made in view of the above, and an object thereof is to provide a mounting structure, an imaging apparatus, and an endoscope that can be miniaturized and have high connection reliability.
　上述した課題を解決し、目的を達成するために、本発明にかかる実装構造体は、底面と側面における連続した領域に構成された２つの電極を有する電子部品と、前記電子部品を半田により実装する１対のランドを備えた基板と、を備え、前記ランドは、単位時間当たりの温度上昇率が異なる２以上の領域を有し、実装された前記電子部品によって隠されずに露出している前記ランドのうち、温度上昇率が高い領域は、温度上昇率が低い領域よりも広いことを特徴とする。 In order to solve the above-described problems and achieve the object, a mounting structure according to the present invention includes an electronic component having two electrodes formed in continuous regions on the bottom surface and side surfaces, and the electronic component mounted by soldering. A board having a pair of lands, wherein the lands have two or more regions having different temperature rise rates per unit time, and are exposed without being hidden by the mounted electronic component. Of the lands, the region where the temperature increase rate is high is wider than the region where the temperature increase rate is low.
　また、本発明にかかる実装構造体は、上記発明において、前記電極を構成する底面と側面による稜線部分が実装される長さは、前記温度上昇率が高い領域の方が、前記温度上昇率が低い領域よりも長いことを特徴とする。 Further, in the mounting structure according to the present invention, in the above invention, the length at which the ridge line portion formed by the bottom surface and the side surface constituting the electrode is mounted has a higher temperature increase rate in the region where the temperature increase rate is higher. It is characterized by being longer than the low region.
　また、本発明にかかる実装構造体は、上記発明において、前記電子部品は角柱状をなし、前記電極は長手方向の両端に配置され、前記温度上昇率が高い領域は、前記ランドの前記電子部品の短手方向の端面より外側の領域を含むように配置され、前記温度上昇率が低い領域は、前記ランドの前記電子部品の短手方向の端面より内側の領域に配置されることを特徴とする。 The mounting structure according to the present invention is the mounting structure according to the present invention, wherein the electronic component has a prismatic shape, the electrodes are arranged at both ends in the longitudinal direction, and the region where the temperature rise rate is high is the electronic component of the land. The region where the temperature rise rate is low is disposed in a region inside the end surface of the electronic component in the short direction of the land. To do.
　また、本発明にかかる実装構造体は、上記発明において、前記電子部品は角柱状をなし、前記電極は長手方向の両端に配置され、前記温度上昇率が低い領域は前記ランドの内側に配置され、前記温度上昇率が高い領域は前記ランドの外周領域であって、前記温度上昇率が低い領域を取り囲むように配置されることを特徴とする。 In the mounting structure according to the present invention, in the above invention, the electronic component has a prismatic shape, the electrodes are disposed at both ends in the longitudinal direction, and the region having a low temperature increase rate is disposed inside the land. The region where the temperature increase rate is high is an outer peripheral region of the land, and is arranged so as to surround the region where the temperature increase rate is low.
　また、本発明にかかる実装構造体は、上記発明において、前記温度上昇率が高い領域は、前記温度上昇率が低い領域より熱伝導率が高い材料から形成されることを特徴とする。 The mounting structure according to the present invention is characterized in that, in the above invention, the region having a high temperature increase rate is made of a material having a higher thermal conductivity than the region having a low temperature increase rate.
　また、本発明にかかる実装構造体は、上記発明において、前記ランドは、前記温度上昇率が高い領域が銅、前記温度上昇率が低い領域がアルミニウムからなり、表面に金メッキ層を有することを特徴とする。 The mounting structure according to the present invention is characterized in that, in the above invention, the land is made of copper in a region where the temperature increase rate is high, and aluminum in a region where the temperature increase rate is low, and has a gold plating layer on the surface. And
　また、本発明にかかる実装構造体は、上記発明において、前記温度上昇率が高い領域と前記温度上昇率が低い領域は同一の材料からなり、前記温度上昇率が高い領域は、前記温度上昇率が低い領域より厚さが薄いことを特徴とする。 Further, in the mounting structure according to the present invention, in the above invention, the region where the temperature increase rate is high and the region where the temperature increase rate is low are made of the same material, and the region where the temperature increase rate is high is the temperature increase rate. It is characterized in that the thickness is thinner than that of the low region.
　また、本発明にかかる撮像装置は、上記のいずれか一つに記載の実装構造体と、前記実装構造体の基板と接続され、外部から入射した光を電気信号に変換する撮像素子と、光を集光し、集光した光を前記撮像素子に入射する光学系と、を備えたことを特徴とする。 In addition, an imaging device according to the present invention includes a mounting structure according to any one of the above, an imaging device connected to a substrate of the mounting structure, and converting light incident from the outside into an electrical signal; And an optical system that makes the collected light incident on the imaging device.
　また、本発明にかかる内視鏡は、上記に記載の撮像装置と、硬質部材によって形成された筒状をなす先端部を有し、被検体内に挿入可能な挿入部と、を備えることを特徴とする。 In addition, an endoscope according to the present invention includes the above-described imaging device, and an insertion portion that has a cylindrical tip portion formed of a hard member and can be inserted into a subject. Features.
　本発明によれば、電子部品の電極側面に十分な接続強度を有するフィレットが形成されるとともに、電子部品の接続に要する領域も小さくできるため、高密度実装が可能となり、撮像装置および内視鏡を小型化することができる。 According to the present invention, a fillet having a sufficient connection strength is formed on the electrode side surface of an electronic component, and an area required for connection of the electronic component can be reduced, so that high-density mounting is possible, and the imaging apparatus and endoscope Can be miniaturized.
図１は、本発明の実施の形態１にかかる内視鏡システムの全体構成を模式的に示す図である。FIG. 1 is a diagram schematically illustrating the overall configuration of the endoscope system according to the first embodiment of the present invention. 図２は、図１に示す内視鏡先端の部分断面図である。FIG. 2 is a partial cross-sectional view of the distal end of the endoscope shown in FIG. 図３は、図２に示す撮像装置の上面図である。FIG. 3 is a top view of the imaging apparatus shown in FIG. 図４は、図３のＡ－Ａ線断面図である。4 is a cross-sectional view taken along line AA in FIG. 図５は、図４のＢ－Ｂ線断面図である。5 is a cross-sectional view taken along line BB in FIG. 図６は、ランドの上面図である。FIG. 6 is a top view of the land. 図７は、実施の形態２にかかるランドの上面図である。FIG. 7 is a top view of the land according to the second embodiment. 図８は、図７のＣ－Ｃ線断面図である。8 is a cross-sectional view taken along the line CC of FIG. 図９は、実施の形態３にかかる電子部品実装時のランドの上面図である。FIG. 9 is a top view of the land when the electronic component according to the third embodiment is mounted. 図１０は、実施の形態４にかかる電子部品実装時のランドの上面図である。FIG. 10 is a top view of the land when the electronic component according to the fourth embodiment is mounted. 図１１は、実施の形態５にかかる電子部品実装時のランドの上面図である。FIG. 11 is a top view of the land when the electronic component according to the fifth embodiment is mounted. 図１２は、実施の形態６にかかる電子部品実装時のランドの上面図である。FIG. 12 is a top view of the land when the electronic component according to the sixth embodiment is mounted. 図１３は、実施の形態７にかかる電子部品実装時のランドの上面図である。FIG. 13 is a top view of the land when the electronic component according to the seventh embodiment is mounted. 図１４は、図１３のＥ－Ｅ線断面図である。14 is a cross-sectional view taken along the line EE of FIG. 図１５は、実施の形態８にかかる電子部品実装時のランドの断面図である。FIG. 15 is a cross-sectional view of a land when the electronic component according to the eighth embodiment is mounted.
　以下の説明では、本発明を実施するための形態（以下、「実施の形態」という）として、撮像装置を備えた内視鏡について説明する。また、この実施の形態により、この発明が限定されるものではない。さらに、図面の記載において、同一部分には同一の符号を付している。さらにまた、図面は、模式的なものであり、各部材の厚みと幅との関係、各部材の比率等は、現実と異なることに留意する必要がある。また、図面の相互間においても、互いの寸法や比率が異なる部分が含まれている。 In the following description, an endoscope provided with an imaging device will be described as a mode for carrying out the present invention (hereinafter referred to as “embodiment”). Moreover, this invention is not limited by this embodiment. Furthermore, the same code | symbol is attached | subjected to the same part in description of drawing. Furthermore, the drawings are schematic, and it should be noted that the relationship between the thickness and width of each member, the ratio of each member, and the like are different from the actual ones. Moreover, the part from which a mutual dimension and ratio differ also in between drawings.
（実施の形態１）
　図１は、本発明の実施の形態１にかかる内視鏡システムの全体構成を模式的に示す図である。図１に示すように、内視鏡システム１は、内視鏡２と、ユニバーサルコード３と、コネクタ５と、プロセッサ（制御装置）６と、表示装置７と、光源装置８とを備える。 (Embodiment 1)
FIG. 1 is a diagram schematically illustrating the overall configuration of the endoscope system according to the first embodiment of the present invention. As shown in FIG. 1, the endoscope system 1 includes an endoscope 2, a universal cord 3, a connector 5, a processor (control device) 6, a display device 7, and a light source device 8.
　内視鏡２は、挿入部３０を被検体の体腔内に挿入することによって、被検体の体内画像を撮像し撮像信号を出力する。ユニバーサルコード３内部の電気ケーブル束は、内視鏡２の挿入部３０の先端まで延伸され、挿入部３０の先端部３Ａに設けられる撮像装置に接続する。 The endoscope 2 captures an in-vivo image of the subject and outputs an imaging signal by inserting the insertion unit 30 into the body cavity of the subject. The electric cable bundle inside the universal cord 3 extends to the distal end of the insertion portion 30 of the endoscope 2 and is connected to an imaging device provided at the distal end portion 3 </ b> A of the insertion portion 30.
　コネクタ５は、ユニバーサルコード３の基端に設けられて、光源装置８およびプロセッサ６に接続され、ユニバーサルコード３と接続する先端部３Ａの撮像装置が出力する撮像信号に所定の信号処理を施すとともに、撮像信号をアナログデジタル変換（Ａ／Ｄ変換）して画像信号として出力する。 The connector 5 is provided at the base end of the universal cord 3 and is connected to the light source device 8 and the processor 6, and performs predetermined signal processing on the imaging signal output from the imaging device of the distal end portion 3 </ b> A connected to the universal cord 3. The image pickup signal is converted from analog to digital (A / D conversion) and output as an image signal.
　光源装置８は、例えば、白色ＬＥＤを用いて構成される。光源装置８が点灯するパルス状の白色光は、コネクタ５、ユニバーサルコード３を経由して内視鏡２の挿入部３０の先端から被写体へ向けて照射する照明光となる。 The light source device 8 is configured using, for example, a white LED. The pulsed white light that is turned on by the light source device 8 becomes illumination light that is irradiated toward the subject from the distal end of the insertion portion 30 of the endoscope 2 via the connector 5 and the universal cord 3.
　プロセッサ６は、コネクタ５から出力される画像信号に所定の画像処理を施すとともに、内視鏡システム１全体を制御する。表示装置７は、プロセッサ６が処理を施した画像信号を表示する。 The processor 6 performs predetermined image processing on the image signal output from the connector 5 and controls the entire endoscope system 1. The display device 7 displays the image signal processed by the processor 6.
　内視鏡２の挿入部３０の基端側には、内視鏡機能を操作する各種ボタン類やノブ類が設けられた操作部４が接続される。操作部４には、被検体の体腔内に生体鉗子、電気メスおよび検査プローブ等の処置具を挿入する処置具挿入口４ａが設けられる。 The operation part 4 provided with various buttons and knobs for operating the endoscope function is connected to the proximal end side of the insertion part 30 of the endoscope 2. The operation unit 4 is provided with a treatment instrument insertion port 4a for inserting a treatment instrument such as a biological forceps, an electric knife and an inspection probe into the body cavity of the subject.
　挿入部３０は、撮像装置が設けられる先端部３Ａと、先端部３Ａの基端側に連設された複数方向に湾曲自在な湾曲部３Ｂと、この湾曲部３Ｂの基端側に連設された可撓管部３Ｃとによって構成される。湾曲部３Ｂは、操作部４に設けられた湾曲操作用ノブの操作によって湾曲し、挿入部３０内部に挿通された湾曲ワイヤの牽引弛緩にともない、たとえば上下左右の４方向に湾曲自在となっている。 The insertion section 30 is connected to the distal end portion 3A where the imaging device is provided, the bending portion 3B which is connected to the proximal end side of the distal end portion 3A and is bendable in a plurality of directions, and the proximal end side of the bending portion 3B. And the flexible tube portion 3C. The bending portion 3B is bent by the operation of a bending operation knob provided in the operation portion 4, and can be bent in four directions, for example, up, down, left, and right as the bending wire inserted through the insertion portion 30 is pulled or loosened. Yes.
　内視鏡２には、光源装置８からの照明光を伝送するライトガイドバンドル（不図示）が配設され、ライトガイドバンドルによる照明光の出射端に照明レンズ（不図示）が配置される。この照明レンズは、挿入部３０の先端部３Ａに設けられており、照明光が被検体に向けて照射される。 The endoscope 2 is provided with a light guide bundle (not shown) that transmits illumination light from the light source device 8, and an illumination lens (not shown) is disposed at an emission light emitting end of the light guide bundle. This illumination lens is provided at the distal end portion 3A of the insertion portion 30, and the illumination light is irradiated toward the subject.
　次に、内視鏡２の先端部３Ａの構成について詳細に説明する。図２は、内視鏡２先端の部分断面図である。なお、図２は、内視鏡２の先端部３Ａに設けられた撮像装置の基板面に対して直交する面であって撮像装置の光軸方向と平行な面で切断した場合の断面図である。図２においては、内視鏡２の挿入部３０の先端部３Ａと、湾曲部３Ｂの一部を図示する。 Next, the configuration of the distal end portion 3A of the endoscope 2 will be described in detail. FIG. 2 is a partial cross-sectional view of the distal end of the endoscope 2. 2 is a cross-sectional view taken along a plane that is orthogonal to the substrate surface of the imaging device provided at the distal end portion 3A of the endoscope 2 and is parallel to the optical axis direction of the imaging device. is there. In FIG. 2, a distal end portion 3A of the insertion portion 30 of the endoscope 2 and a part of the bending portion 3B are illustrated.
　図２に示すように、湾曲部３Ｂは、後述する被覆管４２内側に配置する湾曲管８１内部に挿通された湾曲ワイヤ８２の牽引弛緩にともない、上下左右の４方向に湾曲自在である。この湾曲部３Ｂの先端側に延設された先端部３Ａ内部に、撮像装置３５が設けられる。 As shown in FIG. 2, the bending portion 3B can be bent in four directions, up, down, left and right, as the bending wire 82 inserted into the bending tube 81 disposed inside the later-described cladding tube 42 is pulled and loosened. An imaging device 35 is provided inside the distal end portion 3A extending to the distal end side of the curved portion 3B.
　撮像装置３５は、レンズユニット４３と、レンズユニット４３の基端側に配置する撮像ユニット４０とを有し、接着剤４１ａで先端部本体４１の内側に接着される。先端部本体４１は、撮像装置４０を収容する内部空間を形成するための硬質部材で形成される。先端部本体４１の基端外周部は、柔軟な被覆管４２によって被覆される。先端部本体４１よりも基端側の部材は、湾曲部３Ｂが湾曲可能なように、柔軟な部材で構成されている。先端部本体４１が配置される先端部３Ａが挿入部３０の硬質部分となる。 The imaging device 35 includes a lens unit 43 and an imaging unit 40 disposed on the proximal end side of the lens unit 43, and is adhered to the inside of the distal end portion main body 41 with an adhesive 41a. The tip end body 41 is formed of a hard member for forming an internal space for accommodating the imaging device 40. The proximal end outer peripheral portion of the distal end portion main body 41 is covered with a flexible cladding tube 42. The member on the base end side with respect to the distal end portion main body 41 is configured by a flexible member so that the bending portion 3B can be bent. 3 A of front-end | tip parts in which the front-end | tip part main body 41 is arrange | positioned become a hard part of the insertion part 30. FIG.
　レンズユニット４３は、複数の対物レンズ４３ａ－１～４３ａ－４と、対物レンズ４３ａ－１～４３ａ－４を保持するレンズホルダ４３ｂとを有し、このレンズホルダ４３ｂの先端が、先端部本体４１内部に挿嵌固定されることによって、先端部本体４１に固定される。 The lens unit 43 includes a plurality of objective lenses 43a-1 to 43a-4 and a lens holder 43b that holds the objective lenses 43a-1 to 43a-4. The tip of the lens holder 43b is the tip portion main body 41. It is fixed to the tip end body 41 by being inserted and fixed inside.
　撮像ユニット４０は、ＣＣＤまたはＣＭＯＳなどの光を受光して光電変換を行うことにより電気信号を生成する固体撮像素子４４、固体撮像素子４４の受光部４４ａが形成される受光面と対向する背面側に延出するフレキシブルプリント基板４５（以下「ＦＰＣ基板４５」という）、ＦＰＣ基板４５表面に接続された複数の導体層を有する積層基板４６、および固体撮像素子４４の受光面を覆った状態で固体撮像素子４４に接着するガラスリッド４９を備える。撮像ユニット４０の積層基板４６には、固体撮像素子４４の駆動回路を構成する能動部品や受動部品である電子部品５５～５７が実装され、内部には図示しない複数の導体層間を電気的に導通させるビアが形成されている。また、積層基板４６は、基端側に電気ケーブル束４７の各信号ケーブル４８の先端を接続する外部電極６３が形成さている（図３参照）。 The imaging unit 40 receives light from a CCD or CMOS, etc., and performs photoelectric conversion to generate an electrical signal, and the back side facing the light receiving surface on which the light receiving portion 44a of the solid state imaging device 44 is formed. A flexible printed circuit board 45 (hereinafter referred to as “FPC board 45”) extending to the surface of the FPC board 45, a multilayer board 46 having a plurality of conductor layers connected to the surface of the FPC board 45, and a solid-state image sensor 44 covering the light-receiving surface. A glass lid 49 that adheres to the image sensor 44 is provided. The multilayer substrate 46 of the imaging unit 40 is mounted with electronic components 55 to 57 which are active components and passive components that constitute the drive circuit of the solid-state imaging device 44, and is electrically connected to a plurality of conductor layers (not shown) inside. Vias to be formed are formed. Further, the laminated substrate 46 is formed with an external electrode 63 for connecting the distal ends of the signal cables 48 of the electric cable bundle 47 on the base end side (see FIG. 3).
　各信号ケーブル４８の基端は、挿入部３０の基端方向に延伸する。電気ケーブル束４７は、挿入部３０に挿通配置され、図１に示す操作部４およびユニバーサルコード３を介して、コネクタ５まで延設されている。 The base end of each signal cable 48 extends in the base end direction of the insertion portion 30. The electric cable bundle 47 is inserted into the insertion portion 30 and extends to the connector 5 via the operation portion 4 and the universal cord 3 shown in FIG.
　レンズユニット４３の対物レンズ４３ａ－１～４３ａ－４によって結像された被写体像は、対物レンズ４３ａ－１～４３ａ－４の結像位置に配設された固体撮像素子４４によって検出されて、撮像信号に変換される。撮像信号は、ＦＰＣ基板４５および積層基板４６に接続する信号ケーブル４８およびコネクタ５を経由して、プロセッサ６に出力される。 The subject images formed by the objective lenses 43a-1 to 43a-4 of the lens unit 43 are detected by the solid-state imaging device 44 provided at the imaging positions of the objective lenses 43a-1 to 43a-4, and imaged. Converted to a signal. The imaging signal is output to the processor 6 via the signal cable 48 and the connector 5 connected to the FPC board 45 and the laminated board 46.
　固体撮像素子４４は、受光部４４ａが形成される受光面と対向する背面側で、接着剤５４ａを介して積層基板４６の側面と接着される。固体撮像素子４４と、固体撮像素子４４の側面外周は、金属製の補強部材５２に覆われている。積層基板４６上の電子部品５５～５７に対する外部静電気の影響を防止するため、補強部材５２は、固体撮像素子４４、ＦＰＣ基板４５および積層基板４６から離間して設置される。 The solid-state imaging device 44 is bonded to the side surface of the multilayer substrate 46 via the adhesive 54a on the back side facing the light receiving surface on which the light receiving portion 44a is formed. The solid-state image sensor 44 and the outer periphery of the side surface of the solid-state image sensor 44 are covered with a metal reinforcing member 52. In order to prevent the influence of external static electricity on the electronic components 55 to 57 on the multilayer substrate 46, the reinforcing member 52 is installed apart from the solid-state imaging device 44, the FPC substrate 45, and the multilayer substrate 46.
　撮像ユニット４０および電気ケーブル束４７の先端部は、耐性向上のために、熱収縮チューブ５０によって外周が被覆される。熱収縮チューブ５０内部は、接着樹脂５１によって部品間の隙間が埋められている。 The outer ends of the image pickup unit 40 and the tip end portion of the electric cable bundle 47 are covered with a heat shrinkable tube 50 in order to improve resistance. Inside the heat shrinkable tube 50, a gap between components is filled with an adhesive resin 51.
　固体撮像素子ホルダ５３は、固体撮像素子ホルダ５３の基端側内周面にガラスリッド４９の外周面が嵌め込まれることによって、ガラスリッド４９に接着する固体撮像素子４４を保持する。固体撮像素子ホルダ５３の基端側外周面は、補強部材５２の先端側内周面に嵌合する。固体撮像素子ホルダ５３の先端側内周面には、レンズホルダ４３ｂの基端側外周面が嵌合する。このように各部材同士が嵌合した状態で、レンズホルダ４３ｂの外周面、固体撮像素子ホルダ５３の外周面、ならびに、熱収縮チューブ５０の先端側外周面が、接着剤４１ａによって先端部本体４１の先端の内周面に固定される。 The solid-state image sensor holder 53 holds the solid-state image sensor 44 that adheres to the glass lid 49 by fitting the outer peripheral surface of the glass lid 49 to the inner peripheral surface of the base end side of the solid-state image sensor holder 53. The proximal end side outer peripheral surface of the solid-state image sensor holder 53 is fitted to the distal end side inner peripheral surface of the reinforcing member 52. The base end side outer peripheral surface of the lens holder 43 b is fitted to the front end side inner peripheral surface of the solid-state image sensor holder 53. With the respective members thus fitted, the outer peripheral surface of the lens holder 43b, the outer peripheral surface of the solid-state imaging device holder 53, and the outer peripheral surface of the distal end side of the heat shrinkable tube 50 are bonded to the distal end portion main body 41 by the adhesive 41a. It is fixed to the inner peripheral surface of the tip.
　次に、撮像装置３５について説明する。図３は、図２に示す撮像装置３５の上面図である。図４は、図３のＡ－Ａ線断面図である。図５は、図４のＢ－Ｂ線断面図である。図６は、ランドの上面図である。なお、図３においては、レンズユニット４３および信号ケーブル４８の図示を省略している。 Next, the imaging device 35 will be described. FIG. 3 is a top view of the imaging device 35 shown in FIG. 4 is a cross-sectional view taken along line AA in FIG. 5 is a cross-sectional view taken along line BB in FIG. FIG. 6 is a top view of the land. In FIG. 3, the lens unit 43 and the signal cable 48 are not shown.
　図３に示すように、積層基板４６の上面には、電子部品５５、５６、５７を実装するランド６０－１、６０－２、６１－１、６１－２、６２－１、６２－２が形成されている。電子部品５５～５７は、角柱状をなし、長手方向の両端に電極５５ａ－１、５５ａ－２、５６ａ－１、５６ａ－２、５７ａ－１、５７ａ－２をそれぞれ有している。電子部品５５の電極５５ａ－１、５５ａ－２は、一対のランド６０－１、６０－２に半田５８により接続され、電子部品５６の電極５６ａ－１、５６ａ－２は、一対のランド６１－１、６１－２に半田５８により接続され、電子部品５７の電極５７ａ－１、５７ａ－２は、一対のランド６２－１、６２－２に半田５８により接続されている。なお、電子部品５５、５６、５７は、図４で示したような角柱状の形状に限定されるわけではなく、例えば、角部に丸みがある形状のものでも良い。 As shown in FIG. 3, lands 60-1, 60-2, 61-1, 61-2, 62-1 and 62-2 on which electronic components 55, 56 and 57 are mounted are formed on the upper surface of the multilayer substrate 46. Is formed. The electronic components 55 to 57 have a prismatic shape and have electrodes 55a-1, 55a-2, 56a-1, 56a-2, 57a-1, and 57a-2 at both ends in the longitudinal direction. The electrodes 55a-1 and 55a-2 of the electronic component 55 are connected to the pair of lands 60-1 and 60-2 by solder 58, and the electrodes 56a-1 and 56a-2 of the electronic component 56 are connected to the pair of lands 61- 1 and 61-2 are connected by solder 58, and electrodes 57a-1 and 57a-2 of the electronic component 57 are connected by a solder 58 to a pair of lands 62-1 and 62-2. The electronic components 55, 56, and 57 are not limited to the prismatic shape as shown in FIG. 4, and may be, for example, those having round corners.
　また、図６に示すように、ランド６０－１、６０－２は、半田を加熱時に、上面視で単位時間当たりの温度上昇率が異なる２つの領域６０１、６０２を有し、温度上昇率が高い領域６０１は、主として電子部品５５を載置する領域外、すなわちランド６０－１、６０－２において電子部品５５の長手方向の端面ｆ１より外側の領域に主として配置される。温度上昇率が低い領域６０２は、主として電子部品５５を載置する領域内、すなわちランド６０－１、６０－２において電子部品５５の長手方向の端面ｆ１より内側の領域に主として配置されており、実装された電子部品５５によって隠されずに露出しているランド６０－１、６０－２のうち、温度上昇率が高い領域６０１の方が、温度上昇率が低い領域６０２よりも広い。また、電極５５ａ－１、５５ａ－２の底面と側面によって構成される稜線部分のうち、ランド６０－１、６０－２に実装される長さは、温度上昇率が高い領域６０１における稜線Ａの方が、温度上昇率が低い領域６０２における稜線Ｂよりも長い。図６において、電子部品５５の実装位置を点線で示し、電極５５ａ－２の底面と側面によって構成される稜線部分のうち、温度上昇率が高い領域６０１における稜線Ａを一点破線で示し、温度上昇率が低い領域６０２における稜線Ｂを二点破線で示している。 Further, as shown in FIG. 6, the lands 60-1 and 60-2 have two regions 601 and 602 having different temperature increase rates per unit time when the solder is heated, and the temperature increase rate is high. The high region 601 is mainly disposed outside the region where the electronic component 55 is placed, that is, the region outside the end surface f1 in the longitudinal direction of the electronic component 55 in the lands 60-1 and 60-2. The region 602 with a low temperature rise rate is mainly disposed in a region where the electronic component 55 is placed, that is, in a region inside the end surface f1 in the longitudinal direction of the electronic component 55 in the lands 60-1 and 60-2. Of the lands 60-1 and 60-2 exposed without being hidden by the mounted electronic component 55, the region 601 with a high temperature increase rate is wider than the region 602 with a low temperature increase rate. In addition, of the ridge line portion constituted by the bottom and side surfaces of the electrodes 55a-1 and 55a-2, the length mounted on the lands 60-1 and 60-2 is the length of the ridge line A in the region 601 where the temperature increase rate is high. This is longer than the ridgeline B in the region 602 where the temperature increase rate is low. In FIG. 6, the mounting position of the electronic component 55 is indicated by a dotted line, and the ridge line A in the region 601 where the temperature increase rate is high among the ridge line portion constituted by the bottom surface and the side surface of the electrode 55 a-2 is indicated by a dashed line. The ridge line B in the region 602 where the rate is low is indicated by a two-dot broken line.
　温度上昇率が高い領域６０１を、ランド６０－１、６０－２において電子部品５５の長手方向の端面ｆ１より外側の領域に主として配置することにより、加熱により半田５８を溶融して電子部品５５をランド６０－１、６０－２に接続する際、図４および図５に示すように、温度上昇率が高い領域６０１の温度が先に高くなることにより半田５８が領域６０１に集まり、電子部品５５の電極５５ａ－１、５５ａ－２の端面ｆ１、および一部の端面ｆ２およびｆ３側の側面にフィレットが形成されやすくなる。これにより、電子部品５５とランド６０－１、６０－２との接続の信頼性を向上することができる。 By disposing the region 601 having a high temperature rise rate mainly in a region outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60-1 and 60-2, the solder 58 is melted by heating so that the electronic component 55 is When connecting to the lands 60-1 and 60-2, as shown in FIG. 4 and FIG. 5, the temperature of the region 601 with the high rate of temperature increase first increases the solder 58 in the region 601 and the electronic component 55 Fillets are likely to be formed on the end surfaces f1 of the electrodes 55a-1 and 55a-2, and on the side surfaces of some end surfaces f2 and f3. Thereby, the reliability of the connection between the electronic component 55 and the lands 60-1 and 60-2 can be improved.
　半田５８を、電子部品５５を載置する領域外、すなわちランド６０－１、６０－２において電子部品５５の長手方向の端面ｆ１より外側の領域に存在させることにより、フィレット高さを高くできる。半田５８を、温度上昇率が高い領域６０１の電極５５ａ－１、５５ａ－２の下部以外の場所に多く存在させるためには、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する、温度上昇率が高い領域６０１の電子部品５５の下部の長さｄ２は、５０％以下であることが好ましく、３０％以下であることがさらに好ましい。 The fillet height can be increased by allowing the solder 58 to exist outside the region where the electronic component 55 is placed, that is, outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60-1 and 60-2. In order to make many solders 58 exist in places other than the lower portions of the electrodes 55a-1 and 55a-2 in the region 601 where the temperature rise rate is high, the length in the longitudinal direction of the electronic component 55 in the region 601 where the temperature rise rate is high. The length d2 of the lower part of the electronic component 55 in the region 601 where the temperature increase rate is high with respect to d1 is preferably 50% or less, and more preferably 30% or less.
　また、電子部品５５のランド６０－１、６０－２への載置の安定性、および半田５８の供給の観点から、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する温度上昇率が低い領域６０２の電子部品５５の長手方向の長さｄ３は、略同一であることが好ましい。 Further, from the viewpoint of the stability of placing the electronic component 55 on the lands 60-1 and 60-2 and the supply of the solder 58, the length 601 of the electronic component 55 in the longitudinal direction of the region 601 where the temperature rise rate is high. It is preferable that the length d3 in the longitudinal direction of the electronic component 55 in the region 602 where the temperature increase rate is low is substantially the same.
　温度上昇率が高い領域６０１は、温度上昇率が低い領域６０２より熱伝導率が高い材料から形成され、たとえば、温度上昇率が高い領域は銅、温度上昇率が低い領域がアルミニウムから形成される。また、領域６０１、６０２の表面は、導電性を向上する金メッキ層６０３が形成されている。 The region 601 having a high temperature increase rate is formed from a material having a higher thermal conductivity than the region 602 having a low temperature increase rate. For example, a region having a high temperature increase rate is formed from copper and a region having a low temperature increase rate is formed from aluminum. . Further, a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602.
　上記では、電子部品５５を実装するランド６０－１、６０－２について説明したが、電子部品５６および５７を実装するランド６１－１、６１－２、６２－１、６２－２も、ランド６０－１、６０－２と同様に、単位時間当たりの温度上昇率が異なる２つの領域６０１、６０２を有し、温度上昇率が高い領域６０１は、主として電子部品５６、５７を載置する領域外、すなわちランド６１－１、６１－２、６２－１、６２－２において電子部品５６、５７の長手方向の端面ｆ１より外側の領域に主として配置される。これにより、電子部品５６、５７の電極５６ａ－１、５６ａ－２、５７ａ－１、５７ａ－２の側面にフィレットが形成されやすくなり、電子部品５６、５７とランド６１－１、６１－２、６２－１、６２－２との接続の信頼性を向上することができる。 In the above description, the lands 60-1 and 60-2 on which the electronic component 55 is mounted have been described. However, the lands 61-1, 61-2, 62-1, and 62-2 on which the electronic components 56 and 57 are mounted are also included in the land 60. -1 and 60-2, the two regions 601 and 602 having different temperature rise rates per unit time, and the region 601 having a high temperature rise rate is mainly outside the region where the electronic components 56 and 57 are placed. In other words, the lands 61-1, 61-2, 62-1, and 62-2 are mainly disposed in a region outside the end face f1 in the longitudinal direction of the electronic components 56 and 57. This facilitates the formation of fillets on the side surfaces of the electrodes 56a-1, 56a-2, 57a-1, 57a-2 of the electronic components 56, 57, and the electronic components 56, 57 and the lands 61-1, 61-2, The reliability of connection with 62-1 and 62-2 can be improved.
（実施の形態２）
　図７は、実施の形態２にかかるランドの上面図である。図８は、図７のＣ－Ｃ線断面図である。実施の形態２では、電子部品５５が実装されるランド６０Ａ－１、６０Ａ－２において、温度上昇率が高い領域６０１は、電子部品５５の短手方向の端面より外側の領域に主として配置される。なお、実施の形態２において、温度上昇率が高い領域６０１および温度上昇率が低い領域６０２に使用する材料は、実施の形態１と同様のものが使用できる。また、領域６０１、６０２の表面は、実施の形態１と同様に、導電性を向上する金メッキ層６０３が形成されている。 (Embodiment 2)
FIG. 7 is a top view of the land according to the second embodiment. 8 is a cross-sectional view taken along the line CC of FIG. In the second embodiment, in the lands 60A-1 and 60A-2 on which the electronic component 55 is mounted, the region 601 having a high temperature rise rate is mainly disposed in a region outside the end surface of the electronic component 55 in the short direction. . Note that in Embodiment 2, the same materials as those in Embodiment 1 can be used for the region 601 with a high temperature increase rate and the region 602 with a low temperature increase rate. Further, a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
　温度上昇率が高い領域６０１は、主として電子部品５５を載置する領域外、すなわちランド６０Ａ－１、６０Ａ－２において電子部品５５の短手方向の端面ｆ２、ｆ３より外側の領域に主として配置される。温度上昇率が低い領域６０２は、主として電子部品５５を載置する領域内、すなわちランド６０Ａ－１、６０Ａ－２において電子部品５５の短手方向の端面ｆ２、ｆ３より内側の領域に配置されている。詳細には、ランド６０Ａ－１、６０Ａ－２は、電子部品５５の短手方向に３つの領域が平行に形成されており、３つの領域は、２つの温度上昇率が高い領域６０１と、１つの温度上昇率が低い領域６０２であり、２つの温度上昇率が高い領域６０１が温度上昇率が低い領域６０２を挟むように配置されており、電子部品５５が実装された後に電子部品５５によって隠されずに露出しているランド６０Ａ－１、６０Ａ－２は、温度上昇率が高い領域６０１のみである。温度上昇率が低い領域６０２は電子部品５５で全て隠される。 The region 601 where the temperature rise rate is high is mainly disposed outside the region where the electronic component 55 is placed, that is, the region outside the end faces f2 and f3 in the short direction of the electronic component 55 in the lands 60A-1 and 60A-2. The The region 602 having a low temperature rise rate is mainly disposed in a region where the electronic component 55 is placed, that is, in a region inside the end surfaces f2 and f3 in the short direction of the electronic component 55 in the lands 60A-1 and 60A-2. Yes. Specifically, in the lands 60A-1 and 60A-2, three regions are formed in parallel in the short direction of the electronic component 55. The three regions include two regions 601 having a high rate of temperature rise, and 1 The two temperature increase rates are two regions 602, and the two high temperature increase rates region 601 are arranged so as to sandwich the low temperature increase rate region 602 and are hidden by the electronic component 55 after the electronic component 55 is mounted. The lands 60A-1 and 60A-2 that are exposed without being exposed are only the region 601 having a high temperature rise rate. The region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
　温度上昇率が高い領域６０１を、ランド６０Ａ－１、６０Ａ－２において電子部品５５の短手方向の端面ｆ２、ｆ３より外側の領域に主として配置することにより、加熱により半田５８を溶融して電子部品５５をランド６０Ａ－１、６０Ａ－２に接続する際、温度上昇率が高い領域６０１の温度が先に高くなることにより半田５８が領域６０１に集まり、電子部品５５の電極５５ａ－１、５５ａ－２の端面ｆ２およびｆ３側の側面にフィレットが形成されやすくなる。これにより、電子部品５５とランド６０Ａ－１、６０Ａ－２との接続の信頼性を向上することができる。 The region 601 having a high temperature rise rate is mainly disposed in a region outside the end faces f2 and f3 in the short direction of the electronic component 55 in the lands 60A-1 and 60A-2. When the component 55 is connected to the lands 60A-1 and 60A-2, the temperature of the region 601 where the rate of temperature increase is high first, so that the solder 58 gathers in the region 601 and the electrodes 55a-1, 55a of the electronic component 55 are collected. -2 tends to form fillets on the side surfaces of the end surfaces f2 and f3. Thereby, the reliability of the connection between the electronic component 55 and the lands 60A-1 and 60A-2 can be improved.
　半田５８を、電子部品５５を載置する領域外、すなわちランド６０Ａ－１、６０Ａ－２において電子部品５５の短手方向の端面ｆ２、ｆ３より外側の領域に主として存在させることにより、フィレット高さを高くできる。半田５８を、温度上昇率が高い領域６０１の電極５５ａ－１、５５ａ－２の下部以外の場所に多く存在させるためには、温度上昇率が高い領域６０１の電子部品５５の短手方向の長さｄ４に対する、温度上昇率が高い領域６０１の電子部品５５の下部の長さｄ５は、５０％以下であることが好ましく、３０％以下であることがさらに好ましい。 By making the solder 58 mainly exist outside the region where the electronic component 55 is placed, that is, outside the end faces f2 and f3 in the short direction of the electronic component 55 in the lands 60A-1 and 60A-2, the fillet height is increased. Can be high. In order to make many solders 58 exist in places other than the lower portions of the electrodes 55a-1 and 55a-2 in the region 601 where the temperature rise rate is high, the length in the short direction of the electronic component 55 in the region 601 where the temperature rise rate is high. The length d5 of the lower part of the electronic component 55 in the region 601 where the temperature rise rate is high with respect to the length d4 is preferably 50% or less, and more preferably 30% or less.
　また、半田５８を、電子部品５５を載置する領域外、すなわちランド６０Ａ－１、６０Ａ－２において電子部品５５の短手方向の端面ｆ２、ｆ３より主として外側の領域に存在させる観点から、温度上昇率が高い領域６０１の電子部品５５の短手方向の長さｄ４に対する温度上昇率が低い領域６０２の電子部品５５の短手方向の長さｄ６は、略同一であることが好ましい。 Further, from the viewpoint of causing the solder 58 to exist outside the region where the electronic component 55 is placed, that is, in the land 60A-1, 60A-2, mainly in the region outside the end faces f2, f3 in the short direction of the electronic component 55. The length d6 in the short direction of the electronic component 55 in the region 602 with a low rate of temperature rise is preferably substantially the same as the length d4 in the short direction of the electronic component 55 in the region 601 where the increase rate is high.
　実施の形態２では、ランド６０Ａ－１、６０Ａ－２の電子部品５５の長手方向の端面を、電子部品５５の長手方向の端面ｆ１と揃えて形成している。したがって、電子部品５５の実装に要するランド６０Ａ－１、６０Ａ－２の電子部品５５の長手方向に要する長さを短くでき、電子部品５５の長手方向に高密度な実装が可能となる。 In the second embodiment, the end surfaces in the longitudinal direction of the electronic components 55 of the lands 60A-1 and 60A-2 are formed so as to be aligned with the end surfaces f1 in the longitudinal direction of the electronic components 55. Therefore, the length required in the longitudinal direction of the electronic component 55 of the lands 60A-1 and 60A-2 required for mounting the electronic component 55 can be shortened, and high-density mounting in the longitudinal direction of the electronic component 55 becomes possible.
（実施の形態３）
　図９は、実施の形態３にかかる電子部品５５を実装時のランドの上面図である。実施の形態３では、電子部品５５が実装されるランド６０Ｂ－１、６０Ｂ－２において、温度上昇率が高い領域６０１は、電子部品５５の長手方向の端面より外側、かつ電子部品５５の短手方向の端面より外側の領域に主として配置される。実施の形態３において、温度上昇率が高い領域６０１および温度上昇率が低い領域６０２に使用する材料は、実施の形態１と同様のものが使用できる。また、領域６０１、６０２の表面は、実施の形態１と同様に、導電性を向上する金メッキ層６０３が形成されている。 (Embodiment 3)
FIG. 9 is a top view of a land when the electronic component 55 according to the third embodiment is mounted. In the third embodiment, in the lands 60B-1 and 60B-2 on which the electronic component 55 is mounted, the region 601 where the temperature rise rate is high is outside the end surface in the longitudinal direction of the electronic component 55 and the short side of the electronic component 55. It is mainly disposed in a region outside the end face in the direction. In Embodiment 3, the same materials as those in Embodiment 1 can be used for the region 601 with a high temperature increase rate and the region 602 with a low temperature increase rate. Further, a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
　温度上昇率が高い領域６０１はランド６０Ｂ－１、６０Ｂ－２において電子部品５５の長手方向の端面ｆ１より外側、かつ短手方向の端面ｆ２、ｆ３より外側の領域に主として配置される。温度上昇率が低い領域６０２は、主として電子部品５５を載置する領域内、すなわちランド６０Ｂ－１、６０Ｂ－２において電子部品５５の長手方向の端面ｆ１より内側、かつ短手方向の端面ｆ２、ｆ３より内側の領域に配置されている。詳細には、ランド６０Ｂ－１、６０Ｂ－２は、温度上昇率が低い領域６０２を温度上昇率が高い領域６０１がＵ字状に取り囲むように配置されており、電子部品５５が実装された後に電子部品５５によって隠されずに露出しているランド６０Ｂ－１、６０Ｂ－２は、温度上昇率が高い領域６０１のみである。温度上昇率が低い領域６０２は電子部品５５で全て隠される。 The region 601 having a high temperature rise rate is mainly disposed in the lands 60B-1 and 60B-2 outside the longitudinal end face f1 of the electronic component 55 and outside the lateral end faces f2 and f3. The region 602 where the rate of temperature increase is low is mainly in the region where the electronic component 55 is placed, that is, on the lands 60B-1 and 60B-2, inside the longitudinal end surface f1 of the electronic component 55 and in the short side end surface f2. It is arranged in a region inside f3. Specifically, the lands 60B-1 and 60B-2 are arranged so that the region 601 having a high temperature increase rate surrounds the region 602 having a low temperature increase rate in a U shape, and after the electronic component 55 is mounted. The lands 60B-1 and 60B-2 exposed without being hidden by the electronic component 55 are only the region 601 having a high temperature rise rate. The region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
　温度上昇率が高い領域６０１を、ランド６０Ｂ－１、６０Ｂ－２において電子部品５５の長手方向の端面ｆ１より外側、かつ短手方向の端面ｆ２、ｆ３より外側の領域に主として配置することにより、加熱により半田５８を溶融して電子部品５５をランド６０Ｂ－１、６０Ｂ－２に接続する際、温度上昇率が高い領域６０１の温度が先に高くなることにより半田５８が領域６０１に集まり、電子部品５５の電極５５ａ－１、５５ａ－２の端面ｆ１、ｆ２、ｆ３側の側面にフィレットが形成されやすくなる。これにより、電子部品５５とランド６０Ｂ－１、６０Ｂ－２との接続の信頼性を向上することができる。 By disposing the region 601 having a high rate of temperature rise mainly in the regions outside the end surfaces f1 and f3 in the short direction and outside the end surfaces f2 and f3 in the short direction in the lands 60B-1 and 60B-2, When the solder 58 is melted by heating and the electronic component 55 is connected to the lands 60B-1 and 60B-2, the temperature of the region 601 where the temperature rise rate is high first increases, so that the solder 58 gathers in the region 601 and the electrons Fillets are likely to be formed on the side surfaces of the electrodes 55a-1, 55a-2 of the component 55 on the side of the end faces f1, f2, f3. Thereby, the reliability of the connection between the electronic component 55 and the lands 60B-1 and 60B-2 can be improved.
　半田５８を、電子部品５５を載置する領域外、すなわちランド６０Ｂ－１、６０Ｂ－２において電子部品５５の長手方向の端面ｆ１より外側、かつ短手方向の端面ｆ２、ｆ３より外側の領域に主として存在させることにより、フィレット高さを高くできる。半田５８を、温度上昇率が高い領域６０１の電極５５ａ－１、５５ａ－２の下部以外の場所に多く存在させるためには、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する、温度上昇率が高い領域６０１の電子部品５５下部の長手方向の長さｄ２は、５０％以下であることが好ましく、３０％以下であることがさらに好ましい。また、温度上昇率が高い領域６０１の電子部品５５の短手方向の長さｄ４に対する、温度上昇率が高い領域６０１の電子部品５５下部の短手方向の長さｄ５は、５０％以下であることが好ましく、３０％以下であることがさらに好ましい。 Solder 58 is placed outside the area where electronic component 55 is placed, that is, outside land 50B-1 and 60B-2, outside end surface f1 in the longitudinal direction of electronic component 55 and outside end surfaces f2 and f3 in the short direction. By making it mainly exist, the height of the fillet can be increased. In order to make many solders 58 exist in places other than the lower portions of the electrodes 55a-1 and 55a-2 in the region 601 where the temperature rise rate is high, the length in the longitudinal direction of the electronic component 55 in the region 601 where the temperature rise rate is high. The length d2 in the longitudinal direction of the lower part of the electronic component 55 in the region 601 with a high temperature rise rate with respect to d1 is preferably 50% or less, and more preferably 30% or less. Further, the length d5 in the short direction of the lower part of the electronic component 55 in the region 601 with a high temperature rise rate is 50% or less with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature rise rate. It is preferably 30% or less.
　半田５８を、電子部品５５を載置する領域外、すなわちランド６０Ｂ－１、６０Ｂ－２において電子部品５５の長手方向の端面ｆ１の外側、かつ短手方向の端面ｆ２、ｆ３より外側の領域に主として存在させる観点から、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する温度上昇率が低い領域６０２の電子部品５５の長手方向の長さｄ３は、１００％以上１５０％以下であることが好ましい。また、温度上昇率が高い領域６０１の電子部品５５の短手方向の長さｄ４に対する温度上昇率が低い領域６０２の電子部品５５の短手方向の長さｄ６は、１００％以上３００％以下であることが好ましい。 Solder 58 is placed outside the area where electronic component 55 is placed, that is, outside lands 60B-1 and 60B-2, outside end surface f1 in the longitudinal direction of electronic component 55 and outside end surfaces f2 and f3 in the short direction. From the viewpoint of mainly existing, the length d3 in the longitudinal direction of the electronic component 55 in the region 602 with a low rate of temperature rise relative to the length d1 in the longitudinal direction of the electronic component 55 in the region 601 with a high temperature rise rate is 100% or more and 150%. The following is preferable. In addition, the length d6 in the short direction of the electronic component 55 in the region 602 with a low temperature increase rate with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature increase rate is 100% or more and 300% or less. Preferably there is.
（実施の形態４）
　図１０は、実施の形態４にかかる電子部品５５を実装時のランドの上面図である。実施の形態４では、電子部品５５が実装されるランド６０Ｃ－１、６０Ｃ－２において、温度上昇率が高い領域６０１は、温度上昇率が低い領域６０２を取り囲むように配置される。なお、実施の形態４において、温度上昇率が高い領域６０１および温度上昇率が低い領域６０２に使用する材料は、実施の形態１と同様のものが使用できる。また、領域６０１、６０２の表面は、実施の形態１と同様に、導電性を向上する金メッキ層６０３が形成されている。 (Embodiment 4)
FIG. 10 is a top view of a land when the electronic component 55 according to the fourth embodiment is mounted. In the fourth embodiment, in the lands 60C-1 and 60C-2 on which the electronic component 55 is mounted, the region 601 having a high temperature increase rate is disposed so as to surround the region 602 having a low temperature increase rate. Note that in Embodiment 4, the same materials as those in Embodiment 1 can be used for the region 601 with a high temperature increase rate and the region 602 with a low temperature increase rate. Further, a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
　温度上昇率が高い領域６０１は、ランド６０Ｃ－１、６０Ｃ－２の外周領域に配置され、温度上昇率が低い領域６０２はランド６０Ｃ－１、６０Ｃ－２の内側に配置される。すなわち、温度上昇率が高い領域６０１は、温度上昇率が低い領域６０２を取り囲むように配置されており、電子部品５５が実装された後に電子部品５５によって隠されずに露出しているランド６０Ｃ－１、６０Ｃ－２は、温度上昇率が高い領域６０１のみである。温度上昇率が低い領域６０２は電子部品５５で全て隠される。 The region 601 having a high temperature increase rate is disposed in the outer peripheral region of the lands 60C-1 and 60C-2, and the region 602 having a low temperature increase rate is disposed inside the lands 60C-1 and 60C-2. That is, the region 601 with a high temperature rise rate is arranged so as to surround the region 602 with a low temperature rise rate, and the land 60C-1 exposed without being hidden by the electronic component 55 after the electronic component 55 is mounted. , 60C-2 is only the region 601 where the temperature rise rate is high. The region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
　温度上昇率が高い領域６０１を、ランド６０Ｃ－１、６０Ｃ－２において外周領域に配置することにより、加熱により半田５８を溶融して電子部品５５をランド６０Ｃ－１、６０Ｃ－２に接続する際、温度上昇率が高い領域６０１の温度が先に高くなることにより半田５８が領域６０１に集まり、電子部品５５の電極５５ａ－１、５５ａ－２の端面ｆ１、ｆ２、ｆ３、ｆ４側の側面にフィレットが形成されやすくなる。これにより、電子部品５５とランド６０Ｃ－１、６０Ｃ－２との接続の信頼性を向上することができる。 When the region 601 having a high temperature rise rate is arranged in the outer peripheral region of the lands 60C-1 and 60C-2, the solder 58 is melted by heating to connect the electronic component 55 to the lands 60C-1 and 60C-2. When the temperature of the region 601 where the rate of temperature increase is high first, the solder 58 gathers in the region 601 and is formed on the side surfaces of the end surfaces f1, f2, f3, and f4 of the electrodes 55a-1 and 55a-2 of the electronic component 55. Fillets are easily formed. Thereby, the reliability of the connection between the electronic component 55 and the lands 60C-1 and 60C-2 can be improved.
　半田５８を、電子部品５５を載置する領域外、すなわちランド６０Ｃ－１、６０Ｃ－２の外周領域に存在させることにより、フィレット高さを高くできる。半田５８を、ランド６０Ｃ－１、６０Ｃ－２の外周領域に多く存在させるためには、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する、温度上昇率が高い領域６０１の電子部品５５下部の長手方向の長さｄ２は、５０％以下であることが好ましく、３０％以下であることがさらに好ましい。また、温度上昇率が高い領域６０１の電子部品５５の短手方向の長さｄ４に対する、温度上昇率が高い領域６０１の電子部品５５下部の短手方向の長さｄ５は、５０％以下であることが好ましく、３０％以下であることがさらに好ましい。 By making the solder 58 exist outside the area where the electronic component 55 is placed, that is, outside the lands 60C-1 and 60C-2, the fillet height can be increased. In order to make many solders 58 exist in the outer peripheral regions of the lands 60C-1 and 60C-2, the region 601 having a high temperature increase rate with respect to the length d1 in the longitudinal direction of the electronic component 55 in the region 601 having a high temperature increase rate. The length d2 in the longitudinal direction of the lower part of the electronic component 55 is preferably 50% or less, and more preferably 30% or less. Further, the length d5 in the short direction of the lower part of the electronic component 55 in the region 601 with a high temperature rise rate is 50% or less with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature rise rate. It is preferably 30% or less.
　半田５８を、電子部品５５を載置する領域外、すなわちランド６０Ｃ－１、６０Ｃ－２において電子部品５５の長手方向の端面ｆ１の外側、かつ短手方向の端面ｆ２、ｆ３より外側の領域に主として存在させる観点から、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する温度上昇率が低い領域６０２の電子部品５５の長手方向の長さｄ３は、５０％以上１００％以下であることが好ましい。また、温度上昇率が高い領域６０１の電子部品５５の短手方向の長さｄ４に対する温度上昇率が低い領域６０２の電子部品５５の短手方向の長さｄ６は、１００％以上３００％以下であることが好ましい。 Solder 58 is placed outside the area where electronic component 55 is placed, that is, outside lands 60C-1 and 60C-2, outside end surface f1 in the longitudinal direction of electronic component 55 and outside end surfaces f2 and f3 in the short direction. From the viewpoint of mainly existing, the length d3 in the longitudinal direction of the electronic component 55 in the region 602 with a low rate of temperature rise relative to the length d1 in the longitudinal direction of the electronic component 55 in the region 601 with a high temperature rise rate is 50% or more and 100%. The following is preferable. In addition, the length d6 in the short direction of the electronic component 55 in the region 602 with a low temperature increase rate with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature increase rate is 100% or more and 300% or less. Preferably there is.
（実施の形態５）
　図１１は、実施の形態５にかかる電子部品５５を実装時のランドの上面図である。実施の形態５では、電子部品５５が実装されるランド６０Ｄ－１、６０Ｄ－２において、温度上昇率が高い領域６０１は、電子部品５５の長手方向の端面ｆ４より主として内側、かつ電子部品５５の短手方向の端面ｆ２、ｆ３より外側の領域に主として配置される。実施の形態５において、温度上昇率が高い領域６０１および温度上昇率が低い領域６０２に使用する材料は、実施の形態１と同様のものが使用できる。また、領域６０１、６０２の表面は、実施の形態１と同様に、導電性を向上する金メッキ層６０３が形成されている。 (Embodiment 5)
FIG. 11 is a top view of a land when the electronic component 55 according to the fifth embodiment is mounted. In the fifth embodiment, in the lands 60D-1 and 60D-2 on which the electronic component 55 is mounted, the region 601 where the rate of temperature rise is high is mainly inside the longitudinal end surface f4 of the electronic component 55 and the electronic component 55. It is mainly arranged in a region outside the end faces f2, f3 in the short direction. In the fifth embodiment, the same materials as those in the first embodiment can be used for the region 601 having a high temperature increase rate and the region 602 having a low temperature increase rate. Further, a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
　温度上昇率が高い領域６０１はランド６０Ｄ－１、６０Ｄ－２において電子部品５５の長手方向の端面ｆ４より主として内側（電子部品５５の中心側）、かつ短手方向の端面ｆ２、ｆ３より外側の領域に主として配置される。温度上昇率が低い領域６０２は、主として電子部品５５を載置する領域内、すなわちランド６０Ｄ－１、６０Ｄ－２において電子部品５５の長手方向の端面ｆ１より内側、かつ短手方向の端面ｆ２、ｆ３より内側の領域に配置されている。詳細には、ランド６０Ｄ－１、６０Ｄ－２は、温度上昇率が低い領域６０２を温度上昇率が高い領域６０１が、Ｕ字状（実施の形態３とは開口側が逆）に取り囲むように配置されており、電子部品５５が実装された後に電子部品５５によって隠されずに露出しているランド６０Ｄ－１、６０Ｄ－２は、温度上昇率が高い領域６０１のみである。温度上昇率が低い領域６０２は電子部品５５で全て隠される。 The region 601 having a high temperature rise rate is mainly inside the longitudinal end face f4 of the electronic component 55 in the lands 60D-1 and 60D-2 (center side of the electronic component 55) and outside the end faces f2 and f3 in the short direction. Located mainly in the area. The region 602 where the rate of temperature rise is low is mainly in the region where the electronic component 55 is placed, that is, on the lands 60D-1 and 60D-2, inside the longitudinal end surface f1 of the electronic component 55 and in the short side end surface f2. It is arranged in a region inside f3. Specifically, the lands 60D-1 and 60D-2 are arranged so that the region 601 having a high temperature increase rate surrounds the region 602 having a low temperature increase rate in a U shape (the opening side is opposite to that of the third embodiment). The lands 60D-1 and 60D-2 that are exposed without being hidden by the electronic component 55 after the electronic component 55 is mounted are only the region 601 having a high temperature rise rate. The region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
　温度上昇率が高い領域６０１を、ランド６０Ｄ－１、６０Ｄ－２において電子部品５５の長手方向の端面ｆ４より内側、かつ短手方向の端面ｆ２、ｆ３より外側の領域に主として配置することにより、加熱により半田５８を溶融して電子部品５５をランド６０Ｄ－１、６０Ｄ－２に接続する際、温度上昇率が高い領域６０１の温度が先に高くなることにより半田５８が領域６０１に集まり、電子部品５５の電極５５ａ－１、５５ａ－２の端面ｆ２、ｆ３、ｆ４側の側面にフィレットが形成されやすくなる。これにより、電子部品５５とランド６０Ｄ－１、６０Ｄ－２との接続の信頼性を向上することができる。 By disposing the region 601 having a high temperature rise rate mainly in the region inside the longitudinal end surface f4 of the electronic component 55 and outside the lateral end surfaces f2, f3 in the lands 60D-1 and 60D-2, When the solder 58 is melted by heating and the electronic component 55 is connected to the lands 60D-1 and 60D-2, the temperature of the region 601 where the temperature rise rate is high first increases, so that the solder 58 gathers in the region 601 and Fillets are likely to be formed on the side surfaces of the electrodes 55a-1, 55a-2 of the component 55 on the side of the end faces f2, f3, f4. Thereby, the reliability of the connection between the electronic component 55 and the lands 60D-1 and 60D-2 can be improved.
　半田５８を、電子部品５５を載置する領域外、すなわちランド６０Ｄ－１、６０Ｄ－２において電子部品５５の長手方向の端面ｆ４より内側、かつ短手方向の端面ｆ２、ｆ３より外側の領域に主として存在させることにより、フィレット高さを高くできる。半田５８を、温度上昇率が高い領域６０１の電極５５ａ－１、５５ａ－２の下部以外の場所に多く存在させるためには、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する、温度上昇率が高い領域６０１の電子部品５５下部の長手方向の長さｄ２は、５０％以下であることが好ましく、３０％以下であることがさらに好ましい。また、温度上昇率が高い領域６０１の電子部品５５の短手方向の長さｄ４に対する、温度上昇率が高い領域６０１の電子部品５５下部の短手方向の長さｄ５は、５０％以下であることが好ましく、３０％以下であることがさらに好ましい。 Solder 58 is located outside the area where electronic component 55 is placed, that is, in the land 60D-1, 60D-2, inside the longitudinal end surface f4 of electronic component 55 and outside the lateral end surfaces f2, f3. By making it mainly exist, the height of the fillet can be increased. In order to make many solders 58 exist in places other than the lower portions of the electrodes 55a-1 and 55a-2 in the region 601 where the temperature rise rate is high, the length in the longitudinal direction of the electronic component 55 in the region 601 where the temperature rise rate is high. The length d2 in the longitudinal direction of the lower part of the electronic component 55 in the region 601 with a high temperature rise rate with respect to d1 is preferably 50% or less, and more preferably 30% or less. Further, the length d5 in the short direction of the lower part of the electronic component 55 in the region 601 with a high temperature rise rate is 50% or less with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature rise rate. It is preferably 30% or less.
　半田５８を、電子部品５５を載置する領域外、すなわちランド６０Ｄ－１、６０Ｄ－２において電子部品５５の長手方向の端面ｆ４の内側、かつ短手方向の端面ｆ２、ｆ３より外側の領域に主として存在させる観点から、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する温度上昇率が低い領域６０２の電子部品５５の長手方向の長さｄ３は、１５０％以上２００％以下であることが好ましい。また、温度上昇率が高い領域６０１の電子部品５５の短手方向の長さｄ４に対する温度上昇率が低い領域６０２の電子部品５５の短手方向の長さｄ６は、１００％以上３００％以下であることが好ましい。 Solder 58 is placed outside the area where electronic component 55 is placed, that is, inside lands 60D-1 and 60D-2, inside end surface f4 in the longitudinal direction of electronic component 55 and outside end surfaces f2 and f3 in the short direction. From the viewpoint of mainly existing, the length d3 in the longitudinal direction of the electronic component 55 in the region 602 with a low temperature rise rate relative to the length d1 in the longitudinal direction of the electronic component 55 in the region 601 with a high temperature rise rate is 150% or more and 200%. The following is preferable. In addition, the length d6 in the short direction of the electronic component 55 in the region 602 with a low temperature increase rate with respect to the length d4 in the short direction of the electronic component 55 in the region 601 with a high temperature increase rate is 100% or more and 300% or less. Preferably there is.
（実施の形態６）
　図１２は、実施の形態６にかかる電子部品５５を実装時のランドの上面図である。実施の形態６では、電子部品５５が実装されるランド６０Ｅ－１、６０Ｅ－２において、温度上昇率が高い領域６０１は、電子部品５５の長手方向の端面より外側の領域に主として配置され、ランド６０Ｅ－１、６０Ｅ－２の電子部品５５の短手方向の端面を、電子部品５５の短手方向の端面ｆ２、ｆ３と揃えて形成されている。なお、実施の形態６において、温度上昇率が高い領域６０１および温度上昇率が低い領域６０２に使用する材料は、実施の形態１と同様のものが使用できる。また、領域６０１、６０２の表面は、実施の形態１と同様に、導電性を向上する金メッキ層６０３が形成されている。 (Embodiment 6)
FIG. 12 is a top view of a land when the electronic component 55 according to the sixth embodiment is mounted. In the sixth embodiment, in the lands 60E-1 and 60E-2 on which the electronic component 55 is mounted, the region 601 having a high temperature rise rate is mainly disposed in a region outside the end face in the longitudinal direction of the electronic component 55, The end surfaces in the short direction of the electronic components 55 of 60E-1 and 60E-2 are formed so as to be aligned with the end surfaces f2 and f3 of the electronic components 55 in the short direction. Note that in Embodiment 6, the same materials as those in Embodiment 1 can be used for the region 601 with a high temperature increase rate and the region 602 with a low temperature increase rate. Further, a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 and 602 as in the first embodiment.
　温度上昇率が高い領域６０１は、主として電子部品５５を載置する領域外、すなわちランド６０Ｅ－１、６０Ｅ－２において電子部品５５の長手方向の端面ｆ１より外側の領域に主として配置される。温度上昇率が低い領域６０２は、主として電子部品５５を載置する領域内、すなわちランド６０Ｅ－１、６０Ｅ－２において電子部品５５の長手方向の端面ｆ１より内側の領域に配置されおり、電子部品５５が実装された後に電子部品５５によって隠されずに露出しているランド６０Ｅ－１、６０Ｅ－２は、温度上昇率が高い領域６０１のみである。温度上昇率が低い領域６０２は電子部品５５で全て隠される。 The region 601 where the temperature rise rate is high is mainly disposed outside the region where the electronic component 55 is placed, that is, the region outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60E-1 and 60E-2. The region 602 where the rate of temperature rise is low is mainly disposed in the region where the electronic component 55 is placed, that is, in the region inside the longitudinal end face f1 of the electronic component 55 in the lands 60E-1 and 60E-2. The lands 60E-1 and 60E-2 which are exposed without being hidden by the electronic component 55 after the 55 is mounted are only the region 601 where the temperature rise rate is high. The region 602 where the temperature rise rate is low is completely hidden by the electronic component 55.
　温度上昇率が高い領域６０１を、ランド６０Ｅ－１、６０Ｅ－２において電子部品５５の長手方向の端面ｆ１より外側の領域に主として配置することにより、加熱により半田５８を溶融して電子部品５５をランド６０Ｅ－１、６０Ｅ－２に接続する際、温度上昇率が高い領域６０１の温度が先に高くなることにより半田５８が領域６０１に集まり、電子部品５５の電極５５ａ－１、５５ａ－２の端面ｆ１側の側面にフィレットが形成されやすくなる。これにより、電子部品５５とランド６０Ｅ－１、６０Ｅ－２との接続の信頼性を向上することができる。 By disposing the region 601 having a high temperature rise rate mainly in a region outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60E-1 and 60E-2, the solder 58 is melted by heating, so that the electronic component 55 is When connecting to the lands 60E-1 and 60E-2, the temperature of the region 601 where the rate of temperature increase is high first, so that the solder 58 gathers in the region 601 and the electrodes 55a-1 and 55a-2 of the electronic component 55 are connected. Fillets are easily formed on the side surface on the end face f1 side. Thereby, the reliability of the connection between the electronic component 55 and the lands 60E-1 and 60E-2 can be improved.
　半田５８を、電子部品５５を載置する領域外、すなわちランド６０Ｅ－１、６０Ｅ－２において電子部品５５の長手方向の端面ｆ１より外側の領域に主として存在させることにより、フィレット高さを高くできる。半田５８を、温度上昇率が高い領域６０１の電極５５ａ－１、５５ａ－２の下部以外の場所に多く存在させるためには、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する、温度上昇率が高い領域６０１の電子部品５５の下部の長さｄ２は、５０％以下であることが好ましく、３０％以下であることがさらに好ましい。 By making the solder 58 mainly exist outside the region where the electronic component 55 is placed, that is, outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60E-1 and 60E-2, the fillet height can be increased. . In order to make many solders 58 exist in places other than the lower portions of the electrodes 55a-1 and 55a-2 in the region 601 where the temperature rise rate is high, the length in the longitudinal direction of the electronic component 55 in the region 601 where the temperature rise rate is high. The length d2 of the lower part of the electronic component 55 in the region 601 where the temperature increase rate is high with respect to d1 is preferably 50% or less, and more preferably 30% or less.
　また、電子部品５５のランド６０Ｅ－１、６０Ｅ－２への載置の安定性、および半田５８の供給の観点から、温度上昇率が高い領域６０１の電子部品５５の長手方向の長さｄ１に対する温度上昇率が低い領域６０２の電子部品５５の長手方向の長さｄ３は、略同一であることが好ましい。 Further, from the viewpoint of the stability of placing the electronic component 55 on the lands 60E-1 and 60E-2 and the supply of the solder 58, the length 601 of the electronic component 55 in the longitudinal direction of the electronic component 55 in the region 601 where the temperature rise rate is high. It is preferable that the length d3 in the longitudinal direction of the electronic component 55 in the region 602 where the temperature increase rate is low is substantially the same.
　実施の形態６では、ランド６０Ｅ－１、６０Ｅ－２の電子部品５５の短手方向の端面を、電子部品５５の長手方向の端面ｆ２、ｆ３と揃えて形成している。したがって、電子部品５５の実装に要するランド６０Ｅ－１、６０Ｅ－２の電子部品５５の短手方向に要する長さを短くでき、電子部品５５の短手方向に高密度な実装が可能となる。 In the sixth embodiment, the short-side end surfaces of the electronic components 55 of the lands 60E-1 and 60E-2 are aligned with the long-side end surfaces f2 and f3 of the electronic components 55. Therefore, the length required in the short direction of the electronic component 55 of the lands 60E-1 and 60E-2 required for mounting the electronic component 55 can be shortened, and high-density mounting in the short direction of the electronic component 55 becomes possible.
（実施の形態７）
　図１３は、実施の形態７にかかる電子部品５５を実装時のランドの上面図である。図１４は、図１３のＥ－Ｅ線断面図である。実施の形態７では、電子部品５５が実装されるランド６０Ｆ－１、６０Ｆ－２は、温度上昇率が異なる３つの領域を有している。 (Embodiment 7)
FIG. 13 is a top view of a land when the electronic component 55 according to the seventh embodiment is mounted. 14 is a cross-sectional view taken along the line EE of FIG. In the seventh embodiment, the lands 60F-1 and 60F-2 on which the electronic component 55 is mounted have three regions with different temperature rise rates.
　ランド６０Ｆ－１、６０Ｆ－２は、電子部品５５の長手方向に３つの領域が平行に形成されており、３つの領域は、温度上昇率が高い領域６０１と、温度上昇率が低い領域６０２と、温度上昇率が中程度の領域６０４であり、ランド６０Ｆ－１、６０Ｆ－２の外側から温度上昇率が高い順に領域６０１、領域６０４、領域６０２が配置されており、電子部品５５が実装された後に電子部品５５によって隠されずに露出しているランド６０Ｆ－１、６０Ｆ－２の面積は、温度上昇率が高い領域６０１の方が、温度上昇率が低い領域６０２や温度上昇率が中程度の領域６０４よりも広い。 The lands 60F-1 and 60F-2 have three regions formed in parallel in the longitudinal direction of the electronic component 55. The three regions include a region 601 having a high temperature increase rate and a region 602 having a low temperature increase rate. The region 604 has a medium temperature increase rate, and the region 601, region 604, and region 602 are arranged in order of increasing temperature increase rate from the outside of the lands 60F-1 and 60F-2, and the electronic component 55 is mounted. After that, the areas of the lands 60F-1 and 60F-2 that are exposed without being hidden by the electronic component 55 are higher in the region 601 having a higher temperature increase rate and in the region 602 having a lower temperature increase rate or a medium temperature increase rate. It is wider than the area 604.
　温度上昇率が高い領域６０１、温度上昇率が中程度の領域６０４、温度上昇率が低い領域６０２は、例えば、銅、アルミニウム、真鍮から形成される。また、領域６０１、６０４、６０２の表面は、導電性を向上する金メッキ層６０３が形成されている。 The region 601 having a high temperature increase rate, the region 604 having a medium temperature increase rate, and the region 602 having a low temperature increase rate are formed of, for example, copper, aluminum, or brass. Further, a gold plating layer 603 that improves conductivity is formed on the surfaces of the regions 601, 604, and 602.
　ランド６０Ｆ－１、６０Ｆ－２において、外側から温度上昇率が高い順に領域６０１、領域６０４、領域６０２を配置することにより、加熱によって半田５８が溶融して、温度が高い領域に移動する際の電子部品５５の位置ずれを防止することができる。 In the lands 60F-1 and 60F-2, by arranging the region 601, the region 604, and the region 602 in descending order of the temperature increase rate from the outside, the solder 58 is melted by heating and moved to a region having a high temperature. The position shift of the electronic component 55 can be prevented.
　また、ランド６０Ｆ－１、６０Ｆ－２において、外側から温度上昇率が高い順に領域６０１、領域６０４、領域６０２を配置することにより、加熱により半田５８を溶融して電子部品５５をランド６０Ｆ－１、６０Ｆ－２に接続する際、半田５８が外側の温度上昇率が高い領域６０１に集まり、電子部品５５の電極５５ａ－１、５５ａ－２の端面ｆ１側の側面にフィレットが形成されやすくなる。これにより、電子部品５５とランド６０Ｆ－１、６０Ｆ－２との接続の信頼性を向上することができる。さらに、半田５８を、電子部品５５の長手方向の端面ｆ１より外側の領域に主として存在させることにより、フィレット高さを高くできる。 Further, in the lands 60F-1 and 60F-2, the region 601, the region 604, and the region 602 are arranged in descending order of the temperature increase rate from the outside, so that the solder 58 is melted by heating and the electronic component 55 is replaced with the land 60F-1. , 60F-2, the solder 58 gathers in the outer region 601 where the rate of temperature rise is high, and a fillet is easily formed on the side surface of the electrodes 55a-1 and 55a-2 of the electronic component 55 on the side of the end surface f1. Thereby, the reliability of the connection between the electronic component 55 and the lands 60F-1 and 60F-2 can be improved. Furthermore, the fillet height can be increased by making the solder 58 mainly exist in a region outside the end face f1 in the longitudinal direction of the electronic component 55.
（実施の形態８）
　図１５は、実施の形態８にかかる電子部品５５を実装時のランドの断面図である。実施の形態８では、電子部品５５が実装されるランド６０Ｇ－１、６０Ｇ－２において、温度上昇率が高い領域６０１’は、温度上昇率が低い領域６０２’と同一の材料、例えば銅からなり、温度上昇率が高い領域６０１’の厚さｈ１は、温度上昇率が低い領域６０２’の厚さｈ２より薄く形成されている。なお、領域６０１’、６０２’の表面は、実施の形態１と同様に、導電性を向上する金メッキ層６０３が形成されている。 (Embodiment 8)
FIG. 15 is a cross-sectional view of the land when the electronic component 55 according to the eighth embodiment is mounted. In the eighth embodiment, in the lands 60G-1 and 60G-2 on which the electronic component 55 is mounted, the region 601 ′ having a high temperature increase rate is made of the same material as the region 602 ′ having a low temperature increase rate, for example, copper. The thickness h1 of the region 601 ′ having a high temperature increase rate is formed thinner than the thickness h2 of the region 602 ′ having a low temperature increase rate. Note that a gold plating layer 603 for improving conductivity is formed on the surfaces of the regions 601 ′ and 602 ′ as in the first embodiment.
　ランド６０Ｇ－１、６０Ｇ－２は、加熱時に、上面視で単位時間当たりの温度上昇率が異なる２つの領域６０１’、６０２’を有し、温度上昇率が高い領域６０１’は、主として電子部品５５を載置する領域外、すなわちランド６０Ｇ－１、６０Ｇ－２において電子部品５５の長手方向の端面ｆ１より外側の領域に主として配置される。温度上昇率が低い領域６０２’は、主として電子部品５５を載置する領域内、すなわちランド６０Ｇ－１、６０Ｇ－２において電子部品５５の長手方向の端面ｆ１より内側の領域に主として配置されている。 The lands 60G-1 and 60G-2 have two regions 601 ′ and 602 ′ having different temperature rise rates per unit time when viewed from the top during heating, and the region 601 ′ having a high temperature rise rate is mainly an electronic component. 55 is mainly disposed outside the area where 55 is placed, that is, outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60G-1 and 60G-2. The region 602 ′ having a low temperature rise rate is mainly disposed in a region where the electronic component 55 is placed, that is, in a region inside the end surface f1 in the longitudinal direction of the electronic component 55 in the lands 60G-1 and 60G-2. .
　温度上昇率が高い領域６０１’を、ランド６０Ｇ－１、６０Ｇ－２において電子部品５５の長手方向の端面ｆ１より外側の領域に主として配置することにより、加熱により半田５８を溶融して電子部品５５をランド６０Ｇ－１、６０Ｇ－２に接続する際、温度上昇率が高い領域６０１’の温度が先に高くなることにより半田５８が領域６０１’に集まり、電子部品５５の電極５５ａ－１、５５ａ－２の端面ｆ１の側面にフィレットが形成されやすくなる。これにより、電子部品５５とランド６０Ｇ－１、６０Ｇ－２との接続の信頼性を向上することができる。 The region 601 ′ having a high temperature rise rate is mainly disposed in a region outside the end face f1 in the longitudinal direction of the electronic component 55 in the lands 60G-1 and 60G-2, so that the solder 58 is melted by heating and the electronic component 55 is heated. Are connected to the lands 60G-1 and 60G-2, the temperature of the region 601 ′ having a high rate of temperature rise first increases, so that the solder 58 gathers in the region 601 ′, and the electrodes 55a-1, 55a of the electronic component 55 The fillet is easily formed on the side surface of the end surface f1. Thereby, the reliability of the connection between the electronic component 55 and the lands 60G-1 and 60G-2 can be improved.
　１　内視鏡システム
　２　内視鏡
　３　ユニバーサルコード
　３Ａ　先端部
　３Ｂ　湾曲部
　３Ｃ　可撓管部
　４　操作部
　４ａ　処置具挿入口
　５　コネクタ
　６　プロセッサ
　７　表示装置
　８　光源装置
　３０　挿入部
　３５　撮像装置
　４０　撮像ユニット
　４１　先端部本体
　４１ａ　接着剤
　４２　被覆管
　４３　レンズユニット
　４３ａ－１～４３ａ－４　対物レンズ
　４３ｂ　レンズホルダ
　４４　固体撮像素子
　４４ａ　受光部
　４５　フレキシブルプリント基板
　４６　積層基板
　４７　電気ケーブル束
　４８　信号ケーブル
　４９　ガラスリッド
　５０　熱収縮チューブ
　５１　接着樹脂
　５２　補強部材
　５３　固体撮像素子ホルダ
　５４ａ　接着剤
　５５、５６、５７　電子部品
　５８　半田
　６０－１、６０－２、６０Ａ－１、６０Ａ－２、６０Ｂ－１、６０Ｂ－２、６０Ｃ－１、６０Ｃ－２、６０Ｄ－１、６０Ｄ－２、６０Ｅ－１、６０Ｅ－２、６０Ｆ－１、６０Ｆ－２、６０Ｇ－１、６０Ｇ－２、６１－１、６１－２、６２－１、６２－２　ランド
　６３　外部電極
　８１　湾曲管
　８２　湾曲ワイヤ
　６０１　温度上昇率が高い領域
　６０２　温度上昇率が低い領域
　６０３　金メッキ層
　６０４　温度上昇率が中程度の領域 DESCRIPTION OF SYMBOLS 1 Endoscope system 2 Endoscope 3 Universal cord 3A Tip part 3B Bending part 3C Flexible tube part 4 Operation part 4a Treatment instrument insertion port 5 Connector 6 Processor 7 Display apparatus 8 Light source apparatus 30 Insertion part 35 Imaging apparatus 40 Imaging unit 41 tip body 41a adhesive 42 cladding tube 43 lens unit 43a-1 to 43a-4 objective lens 43b lens holder 44 solid-state imaging device 44a light receiving unit 45 flexible printed circuit board 46 laminated circuit board 47 electric cable bundle 48 signal cable 49 glass lid 50 Heat-shrinkable tube 51 Adhesive resin 52 Reinforcing member 53 Solid-state image sensor holder 54a Adhesive 55, 56, 57 Electronic component 58 Solder 60-1, 60-2, 60A-1, 60A-2, 60B-1, 60B-2, 60C-1, 60C-2, 60D-1, 60D -2, 60E-1, 60E-2, 60F-1, 60F-2, 60G-1, 60G-2, 61-1, 61-2, 62-1, 62-2 Land 63 External electrode 81 Curved tube 82 Curved wire 601 High temperature rise rate 602 Low temperature rise rate 603 Gold plating layer 604 Medium temperature rise rate

Claims (9)

  1. 　底面と側面における連続した領域に構成された２つの電極を有する電子部品と、
    　前記電子部品を半田により実装する１対のランドを備えた基板と、
    　を備え、
    　前記ランドは、単位時間当たりの温度上昇率が異なる２以上の領域を有し、実装された前記電子部品によって隠されずに露出している前記ランドのうち、温度上昇率が高い領域の方が温度上昇率が低い領域よりも広いことを特徴とする実装構造体。     An electronic component having two electrodes configured in a continuous region on the bottom and side surfaces;
    A substrate having a pair of lands for mounting the electronic component by solder;
    With
    The land has two or more regions having different temperature increase rates per unit time, and the region having a higher temperature increase rate among the lands exposed without being hidden by the mounted electronic component has a higher temperature. A mounting structure characterized by being wider than a region having a low rate of increase.
  2. 　前記電極を構成する底面と側面による稜線部分が実装される長さは、前記温度上昇率が高い領域の方が、前記温度上昇率が低い領域よりも長いことを特徴とする請求項１に記載の実装構造体。 The length of the ridge line portion formed by the bottom and side surfaces constituting the electrode is longer in the region where the temperature increase rate is higher than in the region where the temperature increase rate is low. Implementation structure.
  3. 　前記電子部品は角柱状をなし、前記電極は長手方向の両端に配置され、
    　前記温度上昇率が高い領域は、前記ランドの前記電子部品の短手方向の端面より外側の領域を含むように配置され、
    　前記温度上昇率が低い領域は、前記ランドの前記電子部品の短手方向の端面より内側の領域に配置されることを特徴とする請求項１または２に記載の実装構造体。     The electronic component has a prismatic shape, the electrodes are arranged at both ends in the longitudinal direction,
    The region where the rate of temperature increase is high is disposed so as to include a region outside the end surface of the electronic component in the short direction of the land,
    3. The mounting structure according to claim 1, wherein the region where the temperature increase rate is low is arranged in a region inside an end face of the land in a short direction of the electronic component.
  4. 　前記電子部品は角柱状をなし、前記電極は長手方向の両端に配置され、
    　前記温度上昇率が低い領域は前記ランドの内側に配置され、前記温度上昇率が高い領域は前記ランドの外周領域であって、前記温度上昇率が低い領域を取り囲むように配置されることを特徴とする請求項１に記載の実装構造体。     The electronic component has a prismatic shape, the electrodes are arranged at both ends in the longitudinal direction,
    The region where the temperature increase rate is low is disposed inside the land, and the region where the temperature increase rate is high is an outer peripheral region of the land, and is disposed so as to surround the region where the temperature increase rate is low. The mounting structure according to claim 1.
  5. 　前記温度上昇率が高い領域は、前記温度上昇率が低い領域より熱伝導率が高い材料から形成されることを特徴とする請求項１～４のいずれか一つに記載の実装構造体。 The mounting structure according to any one of claims 1 to 4, wherein the region having a high temperature increase rate is formed of a material having a higher thermal conductivity than the region having a low temperature increase rate.
  6. 　前記ランドは、前記温度上昇率が高い領域が銅、前記温度上昇率が低い領域がアルミニウムからなり、表面に金メッキ層を有することを特徴とする請求項５に記載の実装構造体。 6. The mounting structure according to claim 5, wherein the land is made of copper in a region where the temperature rise rate is high, aluminum is made in a region where the temperature rise rate is low, and has a gold plating layer on a surface thereof.
  7. 　前記温度上昇率が高い領域と前記温度上昇率が低い領域は同一の材料からなり、前記温度上昇率が高い領域は、前記温度上昇率が低い領域より厚さが薄いことを特徴とする請求項１～４のいずれか一つに記載の実装構造体。 The region where the temperature rise rate is high and the region where the temperature rise rate is low are made of the same material, and the region where the temperature rise rate is high is thinner than the region where the temperature rise rate is low. 5. The mounting structure according to any one of 1 to 4.
  8. 　請求項１～７のいずれか一つに記載の実装構造体と、
    　前記実装構造体の基板と接続され、外部から入射した光を電気信号に変換する撮像素子と、
    　光を集光し、集光した光を前記撮像素子に入射する光学系と、
    　を備えたことを特徴とする撮像装置。     A mounting structure according to any one of claims 1 to 7;
    An image sensor that is connected to the substrate of the mounting structure and converts light incident from the outside into an electrical signal;
    An optical system that condenses the light and enters the imaged element with the collected light;
    An imaging apparatus comprising:
  9. 　請求項８に記載の撮像装置と、
    　硬質部材によって形成された筒状をなす先端部を有し、被検体内に挿入可能な挿入部と、
    　を備えることを特徴とする内視鏡。
          An imaging device according to claim 8,
    An insertion portion that has a cylindrical tip formed by a hard member and can be inserted into a subject;
    An endoscope comprising:
PCT/JP2015/086568 2015-12-28 2015-12-28 Mounting structure, image pickup device, and endoscope WO2017115441A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2015/086568 WO2017115441A1 (en) 2015-12-28 2015-12-28 Mounting structure, image pickup device, and endoscope
JP2017558834A JPWO2017115441A1 (en) 2015-12-28 2015-12-28 Mounting structure, imaging device, and endoscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/086568 WO2017115441A1 (en) 2015-12-28 2015-12-28 Mounting structure, image pickup device, and endoscope

Publications (1)

Publication Number Publication Date
WO2017115441A1 true WO2017115441A1 (en) 2017-07-06

Family

ID=59225005

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/086568 WO2017115441A1 (en) 2015-12-28 2015-12-28 Mounting structure, image pickup device, and endoscope

Country Status (2)

Country Link
JP (1) JPWO2017115441A1 (en)
WO (1) WO2017115441A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250564A (en) * 2006-03-13 2007-09-27 Mitsubishi Electric Corp Ceramic circuit module and method of manufacturing same
JP2009158668A (en) * 2007-12-26 2009-07-16 Sumitomo Metal Electronics Devices Inc Ceramic multilayer wiring board and method of manufacturing the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007250564A (en) * 2006-03-13 2007-09-27 Mitsubishi Electric Corp Ceramic circuit module and method of manufacturing same
JP2009158668A (en) * 2007-12-26 2009-07-16 Sumitomo Metal Electronics Devices Inc Ceramic multilayer wiring board and method of manufacturing the same

Also Published As

Publication number Publication date
JPWO2017115441A1 (en) 2018-10-18

Similar Documents

Publication Publication Date Title
US9345395B2 (en) Imaging module and endoscope device
US10281710B2 (en) Imaging module and endoscope apparatus each having a flexible substrate divided into different regions where a chip having a transmission buffer and a drive signal cable are connected to the different regions
EP3050491B1 (en) Endoscope device
JP6570657B2 (en) Imaging apparatus, endoscope, and manufacturing method of imaging apparatus
JP6464321B2 (en) Electronic circuit unit, imaging unit and endoscope
WO2014171482A1 (en) Image capturing device and electronic endoscope
US10617285B2 (en) Imaging module with multi-layer substrate and endoscope apparatus
WO2017081720A1 (en) Cable connection structure, imaging module, and endoscope
US10517465B2 (en) Cable connection structure and endoscope apparatus
US10191270B2 (en) Imaging unit and endoscope apparatus
JP6099541B2 (en) Endoscope and endoscope manufacturing method
WO2017115441A1 (en) Mounting structure, image pickup device, and endoscope
JP6503205B2 (en) Imaging device
JP6209288B2 (en) Miniaturization of imaging device
JP6321916B2 (en) Imaging apparatus and electronic endoscope
JP6081347B2 (en) Imaging unit and endoscope
WO2017104055A1 (en) Image pickup unit, endoscope, and manufacturing method for image pickup unit
JP2015080633A (en) Electric unit and endoscope apparatus using electric unit

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15912107

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017558834

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15912107

Country of ref document: EP

Kind code of ref document: A1