WO2017105659A1 - Through-mold structures - Google Patents

Through-mold structures Download PDF

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Publication number
WO2017105659A1
WO2017105659A1 PCT/US2016/060295 US2016060295W WO2017105659A1 WO 2017105659 A1 WO2017105659 A1 WO 2017105659A1 US 2016060295 W US2016060295 W US 2016060295W WO 2017105659 A1 WO2017105659 A1 WO 2017105659A1
Authority
WO
WIPO (PCT)
Prior art keywords
contact block
contact
conductive layer
overmold
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2016/060295
Other languages
French (fr)
Inventor
Sasha OSTER
Srikant Nekkanty
Joshua D. Heppner
Adel A. ELSHERBINI
Yoshihiro Tomita
Debendra Mallik
Shawna M. LIFF
Yoko SEKIHARA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to DE112016005820.9T priority Critical patent/DE112016005820T5/en
Publication of WO2017105659A1 publication Critical patent/WO2017105659A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/22Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/22Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00Electrical arrangements for controlling or matching impedance
    • H10W44/20Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/241Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements
    • H10W44/248Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF] for passive devices or passive elements for antennas
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07211Treating the bond pad before connecting, e.g. by applying flux or cleaning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07236Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07336Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • This document pertains generally, but not by way of limitation, to electronic packaging, such as molded microelectronic packaging.
  • Electronic packages such as electronic packages including through-mold vias, can include vias within an overmold of the electronic package.
  • the through-mold vias can electrically couple a first die to a second die to provide electrical communication between the first and second dies.
  • Constructing the through-mold vias can include laser drilling the overmold to expose an area of conductive material on a substrate of the electronic package.
  • the laser drilling operation can produce an opening through the overmold.
  • Through-mold vias can be constructed within the opening by a plating process applied to the electronic package.
  • one or more layers of conductive material can be electroplated on the exposed conductive area, filling at least a portion of the opening in the overmold.
  • solder paste or conductive ink can be deposited within the opening to create an electrically conductive through-moid via. It is desirable to improve through-mold interconnections, through-mold functionality, and methods for the same.
  • Figure 1 is a cross section view of an electronic package in accordance with some embodiments.
  • Figures 2A-D illustrate a process diagram of a method of constructing a through-mold interconnect in accordance with some embodiments.
  • Figures 3A-D illustrate a process diagram of a method of forming an
  • Figure 4 is a cross section view of an electronic package including a through-mold interconnect having a carrier in accordance with some embodiments.
  • Figures 5A-E illustrate a process for constructing a through-mold
  • Figures 6A-C illustrates an exemplary a process for constructing a through- mold interconnect including an insulator within a carrier
  • Figure 7 is a block diagram of an electronic device incorporating at least one contact block and/or method in accordance with at least one embodiment.
  • FIG. 1 is cross section of an exemplary electronic package 100 including a through mold interconnect, such as a through-mold via including a z contact block 102.
  • the electronic package 100 can include a substrate 104,
  • the substrate 104 can include one or more conductive layers 106.
  • At least one conductive layer 106 can be located on a first substrate surface 108.
  • the conductive layer 106 can be attached to (e.g., laminated on) an upper or lower surface of the substrate 104.
  • a die 110 can be coupled to the conductive layer 106.
  • the die 110 can include at least one contact attached to the conductive layer 106.
  • the die 110 can be attached to the conductive layer 106 with conductive adhesive or solder.
  • the die 1 10 can be in electrical communication with other elements of the electronic package 100 or other electronic devices coupled to the electronic package 100 through the conductive layer 06.
  • a package assembly (as shown and described further herein) can include the substrate 104, the conductive layer 106, and the die 1 10,
  • the contact block 102 can include a first contact surface 1 12 on one end of the contact block 102 and a second contact surface 1 14 on an opposing end of the contact block 102.
  • a contact block wall 1 16 extends between the first contact surface 112 and the second contact surface 1 14.
  • the contact block 102 can be coupled to the package assembly. For instance, the contact block 102 can be coupled to the conductive layer 106, the die 1 10, or the substrate 104,
  • the electronic package 100 include a plurality of contact blocks 102 coupled to the conductive layer 106, die 110, substrate 104, or any combination thereof.
  • the contact block 102 can be coupled to the package assembly by a joint 118.
  • An overmold 120 can be applied to the package assembly. At least a portion of the substrate 04, the conductive layer 106, and the die 110 can be covered by the overmold 120.
  • the second contact surface 114 can be exposed through the overmold 120.
  • the electronic package 100 can optionally include a structure 122 coupled to the second contact surface 114.
  • the structure 122 can be coupled to the overmold 120.
  • the structure 122 can be coupled to the upper surface of the overmold 120 as shown in Figure 1.
  • the contact block 102 can communicate electrical signals or thermal energy from the conductive layer 06 or die 1 0 to the structure 122.
  • the contact block 102 can be electri cally conductive, thermally conductive, or both.
  • the contact block 102 can include, but is not limited to, a batter ⁇ - contact, heat sink, signal contact, or the like.
  • the contact block 102 can include a cross sectional area greater than the cross sectional area of an electrodeposited (plated) through-mold via, such as a cross sectional area of 0.05 mm 2 or greater.
  • the contact block can include a cross-sectional dimension of 250 microns or greater.
  • Increasing the cross sectional area of the contact block 102 can provide for greater power transmission or heat transfer through the contact block 102, Where the contact block 102 includes a battery contact or a heatsink, increasing the cross sectional area of the contact block 102 can improve the operation of the batter ⁇ ' contact or heatsink.
  • the contact block 102 can include a height of 0.20 mm to 1.0 mm or a height exceeding 1.0 mm. In one example, taller contact blocks 102 can extend (and be exposed) through the overmold 120 of taller electronics packages 100.
  • less space within the electronics package 100 can be used by a contact block 102 having a vertical sidewalk
  • limitations of one process for fabricating the contact block 102 e.g., by laser drilling and/or electroplating
  • fabricating the contact block 102 by processes other than those used in printed circuit board fabrication and assembly.
  • the shape of the contact block 102 can be any shape that has sufficient stability for placement on the conductive pad layer 106.
  • the contact block 102 can include, but is not limited to, a cylindrical, rectangular, hollow cylinder, or other.
  • the contact block 102 can include a complex geometry 124.
  • the complex geometry 124 can be included in the electronics package 100 by fabricating the contact block 102 outside of the overmold 120.
  • complex geometries 124 as referred to herein can include, but are not limited to, a truss, spiral, threaded bushing, anchor (e.g., dovetail), microfluidic conduit, bouie, spheroid, hourglass, nozzle, mesh, grid, convoluted shape, or other.
  • the complex geometry 124 can be included on the contact black wall 1 16 or internal to the contact block 102.
  • the contact block 102 can include a geometry configured as a microfluidic conduit, staictural reinforcement, threaded bushing, electromagnetic shield, filter, metamaterial, or the like.
  • the contact block 102 can include a complex geometry 124 configured as a microfluidic cavity.
  • the contact block 102 can include complex geometry 124 including an internal cavity.
  • the internal cavity can have an aperture located on the second contact surface 114.
  • the width of the cavity on the first contact surface 1 2 or internally to the contact block 102 can be greater than the width of the aperture.
  • the shape of the second contact surface 114 can differ from the shape of the first contact surface 112.
  • the shape of the second contact surface 114 can differ from the shape of the contact block 102 between the first contact surface 1 12 and the second contact surface 114.
  • the contact wall 1 16 can be non-symmetrical.
  • the contact block 102 can be fabricated (e.g., prefabricated) from materials including, but not limited to, copper, nickel, tin, zinc, silver, gold, or any combination thereof.
  • the contact block 102 can include a thermal conductivity of 35-500 W-m ' ⁇ k "1 or an electrical conductivity of 15 x 10 6 - 65 x 10 6 Q ' ⁇ m '1 .
  • the thermal conductivity of the contact block 102 can exceed 80 W-m ⁇ -k "1 . Accordingly, greater heat transfer can be achieved through the contact block 102 as compared to correspondingly sized and shaped through-mold interconnects including various solder compositions.
  • the contact block can be fabricated by a process including, but not limited to, cold working, casting, die casting, forging, extrusion, sintering, or the like. Accordingly, the contact block 102 can be substantially free of voids, cracks and include a substantially planar first contact surface 112 and second contact surface 114. In one example, the contact block 02 can include a homogeneous microstructure. In one example, the contact block 102 can be magnetic. A magnetic contact block 102 can be configured as a sensor, antenna, inductor (e.g., inductor core), or other.
  • the contact block 102 can be coated with a material (e.g., a carrier material or insulator material as further described herein) for decreasing the frequency loss of electrical signals through the contact block 102.
  • a material e.g., a carrier material or insulator material as further described herein
  • the contact block 102 can be coated with a Liquid Crystal Polymer (LCP), epoxy resin, or other material with good frequency loss characteristics.
  • the contact block 102 can be coated with solder or plated with nickel, for instance, to improve solder wettability.
  • the contact block 102 can include a composite material. Accordingly, by including the contact block 102 in the electronic package 100, a portion of the overmold volume can be used for an antenna, battery contact, heat sink, inductor, or the like.
  • Figures 2A-D illustrate an exemplar ⁇ ' process 200 for constructing an electronic package 100 having a through-mold interconnect including a contact block 102.
  • Figure 2A illustrates a package assembly 202 created by the process 200.
  • Figure 2B shows a plurality of contact blocks 102 coupled to the conductive layer 106 of the package assembly 202.
  • An overmold can be formed on the package assembly 202 and partially around the one or more contact blocks 102 as depicted in Figure 2C.
  • Figure 2D shows one or more structures 22 coupled to the second contact surface 114 and optionally the overmold 120.
  • the package assembly 202 can include the substrate 104, the conductive layer 106, and the die 1 10.
  • the conductive layer 106 can be coupled to the substrate 104 in one or more ways.
  • the conductive layer 106 can be electrodeposited (electroplated) on to the first substrate surface 108.
  • the conductive layer 106 can include a foil sheet that can be attached to (e.g., laminated on) the first substrate surface 108 with an adhesive.
  • the conductive layer 106 can be printed on to the substrate 104, for instance with an Inkjet printer.
  • the conductive layer 106 can then be etched to create contacts, solder pads, circuit traces, or the like.
  • a cover layer e.g., solder resist
  • the cover layer can be laminated over the conductive layer 106 and the substrate 104.
  • One or more openings can be included in the cover layer to expose the conductive layer 106, for example, to expose solder pads, contacts, electrodes, or the like.
  • the substrate 104 can include a single sided, double sided, or multi-layer construction.
  • the substrate 104 can have dielectric layers fabricated from materials including, but not limited to, FR-4, prepreg, ceramic, epoxy, other glass or fiber filled resin, or the like.
  • the substrate 104 can provide mechanical support for the electronic package 100, a platform for routing circuits, thermal distribution, or electromagnetic shielding, among other things.
  • At least one conductive layer 106 can be attached on each dielectric layer.
  • each dielectric layer can be interposed between conductive layers 106 to form alternating dielectric and conductive layers 106.
  • the conductive layer 106 can be fabricated from conductive materials including, but not limited to, cold-rolled copper, electrodeposited copper, or other conductive materials or foils.
  • the conductive layer 106 can include a copper clad laminate. Electrical signals and thermal energy can be communicated through the conductive layer 106 to the one or more contact blocks 102,
  • the process 200 can further include coupling a die 110 to the conductive layer 106 as shown in the example of Figure 2 A .
  • the die 1 0 can include one or more contacts coupling the die 110 to the conductive layer 106.
  • the one or more contacts can include, but are not limited to, at least one surface mount lead, a ball grid array, land grid array, or the like.
  • the contact of the die 110 can be soldered to the conductive layer 106.
  • the die 110 can be placed (e.g., by a pick-and-place machine) on solder paste deposited over the conductive layer 106.
  • the die 110 can then be soldered to the conductive layer 106 by passing the package assembly 202 through an oven, such as a reflow oven or infrared oven.
  • the die 110 can include a circuit, such as an integrated circuit.
  • the die 110 can be fabricated from a silicon wafer, gallium arsenide, or other semiconductor.
  • the die 110 can include, but is not limited to, a processor, microprocessor, random access memory, radio, arithmetic unit, or the like.
  • the die 110 can be in electrical communication with one or more conductive layers 106 through the contact.
  • the contact black 102 (as previously described herein) can be coupled to the conductive layer 106 with the joint 1 18.
  • the contact block 102 can be fabricated prior to placement or coupling to the conductive layer 106.
  • the contact block 102 can be prefabricated.
  • the joint 118 can be fabricated from a material (hereinafter joint material) including, but not limited to, solder, flux, adhesive, thermally conductive adhesive, electrically conductive adhesive, or the like.
  • the joint material can be deposited on the package assembly 202, such as on the substrate 104, the conductive layer 106, or the die 1 10.
  • the contact block 102 can be placed on the joint material.
  • the contact block 102 can be placed with a pick-and-place machine as previously described. Time and cost can be saved by placing the contact block 102 on to the package assembly 202 as compared to fabricating the through-mold interconnect by electrodepositing one or more layers of conductive material on the package assembly 202. For instance, time and cost can be saved particularly where the contact block includes increased cross sectional area, three-dimensional complexity, and/or height. In another example, time and cost can be reduced by eliminating process steps. For instance, the die 1 0 or other components are placed on the conductive layer 106. The contact block 02 can also be placed with the same equipment and during the same placement session as the die 110 or other components.
  • the joint material can include solder.
  • the joint 18 can be formed by passing the joint material through an oven to solder the contact block 102 to the package assembly 202 (e.g., solidify the solder), A portion of the joint 118 can be coupled to the contact block wall 116, For instance, the joint 1 18 can extend partially up the contact wall 116 or be located partially along the contact wall 1 16.
  • the joint 1 18 can include a fillet shape having one end of the fillet on the contact block wall 116 and the other end of the fillet along the package assembly 202.
  • the joint 118 can be located between the first contact surface 112 and the packages assembly 202,
  • the joint material can include an adhesive or other tacky substance to hold the contact block 102 in place.
  • the joint material can be cured to create a joint 1 18 that is solid.
  • the joint material can be uncured.
  • the joint material can include a tacky characteristic holding the contact block 102 in place, but can remain somewhat viscous, for instance, to allow easier removal of the contact block 102 and/or the joint 1 18,
  • the joint 118 can extend partially up the contact block wall 116 or can be located partially along the contact wall 1 16.
  • the joint 1 18 can increase the robustness of the electronics package 100 due to the increased cross sectional area of the joint 118 where the contact block 102 is coupled to the package assembly 202. Robustness can also be increased by the joint 118 by reducing a stress concentration factor (e.g., minimizing sharp corners) at the junction of the contact block 102 and the package assembly 202.
  • the overmold 120 can be applied to the package assembly 202 and the contact block 102.
  • the overmold 120 can cover at least a portion of the substrate 104, a portion of the conductive layer 106, or a portion of the die 1 10.
  • the overmold 120 can cover the upper side of the package assembly 202 and surround the contact block wall 116.
  • the overmold 120 can be formed or placed on the package assembly 202.
  • the overmold 120 can be molded on the package assembly 202, for example, encapsulated, compression molded, or other in situ fabrication process.
  • the overmold 120 can be fabricated from materials including, but not limited to, a thermoset, epoxy, thermoplastic, polymer, or the like.
  • the overmold 120 can include dielectric characteristics mitigating electrostatic discharge, shorting, or the like.
  • the electronic package 100 can be protected by the additional mechanical strength added by the overmold 120.
  • the die 1 0 or electrical components can be shielded from potential contact and damage.
  • the second contact surface 114 can be exposed through the overmold 120.
  • the second contact surface 114 can be substantially aligned (flush ) with the upper surface 204 of the overmold 20.
  • the second contact surface can be covered by the overmold 120.
  • the upper surface of the overmold 120 can be removed to expose the contact block 102. For instance, the upper surface 204 can be machined or ground to expose the second contact surface 114.
  • one or more structures 122 can be coupled to the second contact surface 14, the upper surface 204 of the overmold 120, or both.
  • the structure 122 can be coupled to the second contact surface 1 14 or upper surface 204 by plating (or electrodepositing), sputtering, printing, laminating, adhering, or other bonding process.
  • the structure 122 can be placed on the second contact block surface 114 or upper surface 204.
  • the structure 122 can be prefabricated and placed with a pick-and-place machine.
  • the structure 22 can be coupled to the second contact block surface 1 14 or the upper surface 204 with adhesive or solder.
  • the substantially flush (and flat) second contact surface 1 14 can facilitate the coupling of the structure 122.
  • the flat and aligned second contact surface 1 14 and upper surface 204 can promote uniform bonding.
  • the structure 122 can include, but is not limited to, an antenna, heatsink, sensor, inductor, circuit, or other.
  • a layer of conductive material such as copper
  • the conductive material can then be etched to create a geometry tuned as an antenna.
  • the conductive material can be in electrical communication with the second contact surface 1 14 to transmit or receive signals through the antenna.
  • Electrical circuits or inductor coils can be created in a similar lamination and etching process.
  • the structure 122 can be configured as a heat sink.
  • the structure 122 can include a thermally conductive material, such as aluminum, copper, zinc, or the like.
  • the structure 122 can include a surface area configured to dissipate heat.
  • the structure 122 can include fins or other geometry to increase surface area and accordingly increase heat dissipation.
  • Figures 3A-D show an exemplary process 300 for creating an aperture 304 in the overmold 120 of the electronic package 100.
  • the process 300 illustrated in Figures 3A-D can include any or all of the steps shown in figures 2A-D and described herein.
  • a component 302 can be placed on the package assembly 202 (e.g., by a pick-and- place machine as previously described herein).
  • the component 302 can be coupled to the substrate 104, the conductive layer 106, or the die 1 10 with solder, flux, solder paste, adhesive, electrically conductive adhesive, thermally conductive adhesive, or the like.
  • the component 302 can be coupled to the conductive layer 106 located on the first substrate surface 108.
  • the component 302 can be coupled to an internal conductive layer 106 (e.g., a conductive layer 106 located within the substrate 104 and interposed between two dielectric layers).
  • the substrate 104 can include a cavity.
  • the component 302 can be coupled to one or more of the internal conductive layers 106 exposed by the cavity.
  • the component 302 can be located flush, below, or partially below the first substrate surface 108.
  • the component 302 can include, but is not limited to, a lens (e.g. Fresnel lens), a sensor (e.g., an optical sensor or environmental sensor), a metamaterial element, inductor, magnetic element (e.g., core), 3D printed component, discrete active, passive, or other type of component.
  • the component 302 can include a solder wettable surface to facilitate coupling the component 302 to the package assembly 202 with solder.
  • the contact block 102 can be coupled to the component 302.
  • An adhesive or tacky substance can be applied or deposited on the component 302 to couple the contact block 102 to the component 302.
  • the contact block 102 can be placed on the component 302, such as on the adhesive or tacky substance on the component 302.
  • the contact block 102 can be placed on the component 302 with a pick-and-place machine.
  • the component 302 can include a mounting surface 306 to facilitate the stability of the contact block 102 located on the component 302.
  • the mounting surface 306 can be planar and the first contact surface 112 of the contact block 102 can be correspondingly planar.
  • the mounting surface 306 and the first contact surface 112 can include a self-centering feature, such as a conical or frustoconical surface that can engage a corresponding mating feature on the opposing element.
  • Figure 3C shows an example of an overmold 120 applied on the package assembly 202 and surrounding the contact block 102 as previously described.
  • the second contact surface 114 can be exposed through the upper surface 204 of the overmold 120.
  • the contact block 102 can be removed from the overmold 120 as shown in Figure 3D.
  • the contact block 102 can be removed by a chemical etching process.
  • the removal of the contact block 102 can create an aperture 304 within the overmold 120,
  • the aperture 304 can expose all or a portion of the conductive layer 106, the component 302, the die 1 10, or other element. Exposed portions of the conductive layer 106 can be electrical contacts, electrodes, or other contacts.
  • removing the contact block 102 by etching can be more time and/or cost efficient than other methods of forming an aperture 304 in the overmold 120, such as mechanical or laser drilling.
  • removing the contact block 102 located on the component 302 can create an aperture 304 over the component 302.
  • the aperture 304 can provide a sensor or lens with access to the exterior of the electronic package 100.
  • removing the contact block 102 can also include removing a portion of the component 302, such as a sacrificial portion of the component 302, A cleaning process can follow the removal of the contact block 102, for instance, to remove any remaining solder, flux, adhesive, or other particulate on the mounting surface 306 of the component 302,
  • FIG 4 shows an example of an electronics package 400 including a contact block assembly 402
  • the electronics package 400 can include the package assembly 202, as previously described herein.
  • the contact block assembly 402 can include a carrier 404 and one or more contact blocks 102. In one example, a coating can be located between the contact block 102 and the carrier 404 (as shown in Figures 6A-E and described further herein).
  • the contact block assembly 402 can be coupled to the package assembly 202 with solder or an adhesive.
  • the contact block assembly 402 can be coupled to the substrate 104, the conductive layer 106, or the die 1 10.
  • the overmold 120 can be applied to the package assembly 202 and around the contact block assembly 402.
  • the carrier 404 can include a first carrier surface 406 and a second carrier surface 408.
  • a carrier wall 410 can extend from the first carrier surface 406 to the second carrier surface 408.
  • the first carrier surface 406 can be coupled to the package assembly 202 and the second carrier surface 408 can be exposed through the overmold 120,
  • the carrier 404 can be fabricated from a material including, but not limited to, a polymer (e.g., poiyamide or LCP), epoxy, FR-4, prepreg, an elastomer, or the like.
  • the carrier 404 can include one or more interstices 412.
  • the interstice 412 can extend from the first carrier surface 406 to the second carrier surface 408 and can accommodate a contact block 102 (such as the contact block 102 previously described herein).
  • the contact block 102 can extend from the first carrier surface 406 to the second carrier surface 408.
  • the first contact surface 1 12 of the contact block 102 can be substantially aligned with the first carrier surface 406 and the second contact surface 114 can be substantially aligned with the second carrier surface 408.
  • the first contact surface 112 can be located at a distance from the first carrier surface 406, or the second contact surface 114 can be located at a distance from the second carrier surface 408, or both.
  • a component 302 (as previously described) can located within the carrier 404.
  • the component 302 can be located within the interstice 412 of the carrier 404, or the component 302 can be insert molded into the carrier 404.
  • other elements can be located within the carrier 404, such as 3D printed parts or the like.
  • a lens such as a Fresnel lens can be molded into the carrier 404.
  • the component 302 or the carrier 404 can include a solder wettable surface for coupling the contact block assembly 402 to the conductive layer 106.
  • the contact block assembly 402 can provide support for a plurality of contact blocks 102.
  • the contact block assembly 402 can include one or more contact blocks 102 having a combined cross sectional area of at least 0.05 mm 2 .
  • the carrier 404 can increase the robustness and flexibility of the electronic package 400.
  • the plurality of contact blocks 102 can provide redundancy for electrical signal communication. Including a plurality of smaller contact blocks 102 in place of a single larger contact block 102 can improve the flexibility of the contact block assembly 402 and result in a larger cross sectional area of the contact blocks 102 in combination.
  • the risk of voids, cracks, or shrinkage can be reduced by including the contact blocks (e.g., prefabricated contact blocks 102) in the contact block assembly 402.
  • FIG. 5A-E illustrate an exemplar ⁇ ' process 500 for constructing a contact block assembly, such as the contact block assembly 402 (as previously described).
  • the carrier 404 can be coupled to a support 504 by an adhesive 506.
  • the carrier 404 can be coupled to the support 504 along the first carrier surface 406.
  • One or more interstices 412 can be located within the carrier 404.
  • the interstice 412 can extend from the first carrier surface 406 to the second carrier surface 408.
  • the interstice 412 can be created by a number of processes including, but not limited to, laser drilling, punching, or molding the interstice 412 into the carrier 404 during fabrication.
  • the support 504 can include any substantially rigid member having a substantially flat surface along an upper side to hold the carrier 404 flat.
  • the support 504 can include, but is not limited to, a panel fabricated from steel, aluminum, ceramic, polymer, or the like.
  • a conductive material 508 can be deposited on the second carrier surface 408 and in the interstice 412.
  • the conductive material 508 can be dispensed in a liquid state through a nozzle, printed, sputtered, or spread along the second carrier surface 408 and can fill the interstice 412.
  • the conductive material 508 can include, but is not limited to, copper, tin, lead, aluminum, steel, gold, silver, or any combination thereof.
  • the volume of conductive material 508 deposited on the carrier 404 can be less than, substantially equal to, or greater than the combined volume of each interstice 412. In the example of Figure 5B, the volume of conductive material 508 can be greater than the combined volume of each interstice 412.
  • a sheet of conductive material 508 can be located on the second carrier surface 408. After the conductive material 508 is dispensed, it can solidify within the interstice 412 or on the second carrier surface 408.
  • the conductive material 508 can be removed from the second carrier surface 408.
  • a portion of the carrier 404, such as the second carrier surface 408 can also be removed to create a planar surface along the upper side of the carrier 404.
  • the conductive material 508 can be removed by a process including, but not limited to, chemical etching, machining, grinding, laser ablation, or the like.
  • the conductive material 508 can be patterned on the second carrier surface 408, such as machined, laser etched, or chemically etched.
  • a structure 122 e.g., antenna, traces, or other
  • the support 504 and adhesive 506 can be removed from the first carrier surface 406.
  • the adhesive can be removed by any mechanical or chemical process, such as a chemical bath dissolving the adhesive or a machining operation cutting the support 504 and the adhesive 506 from the carrier 404.
  • the contact block assembly 402 can be created having one or more contact blocks 102 (e.g., fabricated from the conductive material 508) located within a lumen of the one or more interstices 412 of the carrier 404.
  • the contact block assembly 402 can be divided into smaller contact block assemblies 402, as shown in the example of Figure 5E.
  • the contact block assembly 402 can be cut with a router or laser drill to create smaller contact block assemblies 402 having fewer contact blocks 102,
  • the contact block assembly 402 can be placed and/or coupled to the package assembly 202 and the overmold 120 can be applied.
  • the contact block 102, the structure 122, or both can be exposed through the overmold 120.
  • Figures 6A-C show an exemplary process 600 for fabricating a contact block assembly 402 including an insulator 606 located between the contact blocks 102.
  • the insulator 606 can improve communication through the contact block 102.
  • the insulator 606 can reduce signal loss through the contact block 102, such as high frequency signal loss.
  • the insulator 606 or carrier 404 can include a material having a loss tangent between 0.002 and 0.007.
  • a interconnect base 602 can include one or more contact blocks 102 as previously described herein.
  • the contact block 102 can be coupled to the interconnect base 602 with adhesive or solder or can be integral with the interconnect base 602.
  • the contact block 02 can be fabricated on the interconnect base 602, such as electrodeposited, sputtered, printed, or the like.
  • the contact block 102 can be coupled to the support 504.
  • the contact blocks 02 can be arranged in a pattern along the respective interconnect base 602 or support 504.
  • the contact blocks 102 can include a linear, grid, radial, or randomized pattern along the interconnect base 602 or support 504.
  • the interconnect base 602 can be mounted on the support 504, for example, with adhesive, as previously described herein.
  • the carrier 404 can include at least one interstice 412.
  • the interstice 412 can extend partially through the carrier 404.
  • the interstice 412 can extend from the second carrier surface 408 toward the first carrier surface 406.
  • the interstice 412 can extend through the carrier 404 to the first carrier surface 406.
  • the carrier 404 can be fabricated as previously described herein.
  • an insulator material 604 can be deposited in the interstice 412.
  • the insulator material 604 can be dispensed, injected, or printed into the interstice 412.
  • the insulator material 604 can include, but is not limited to, a liquid epoxy resin, LCP, or other material having low loss characteristics (e.g., low loss tangent) at high signal frequencies.
  • the insulator material 604 can be molded into the interstice 412 and can include a cured epoxy resin, solid LCP, glass-filed polyamide, or the like.
  • the interconnect base 602 can be inserted into the interstice 412.
  • a fit between a lumen of the interstice 412 and the interconnect base 602 can be a close fit, such as a clearance fit.
  • the volume of insulator material 604 located within the interstice 412 can be sufficient to fill a gap between the interconnect base 602 and the carrier 404 once the
  • interconnect base 602 is inserted into the interstice 412. Accordingly, a layer of insulator material 604 can be located around the interconnect base 602, between the contact block 102 and the carrier 404. In one example, the insulator material 604 can be cured or otherwise solidified to create the insulator 606.
  • Figure 6C shows an example where the interconnect base 602 can be removed from the contact block 02 to expose the second contact surface 1 14.
  • the interconnect base 602 can be patterned on the second carrier surface 408, such as machined, laser etched, or chemically etched.
  • a structure 122 e.g., antenna, traces, or other
  • the first carrier surface 406 can also be removed from the contact block assembly 102 to expose the first contact surface 1 12.
  • the contact block assembly 402 can include one or more contact blocks 102 having the insulator 606 located between the contact block 102 and the carrier 404,
  • the first carrier surface 406 and the second carrier surface 408 can be ground or polished to a smooth surface finish,
  • a cleaning process can be applied to the first contact surface 112 or the second contact surface 114 to prepare the surfaces for soldering or adhesion to the package assembly 202, Accordingly, a through- moid interconnect with high frequency performance (i.e., reduced signal loss) can be created.
  • FIG. 7 is a block diagram of an electronic device 700 incorporating at least one solder and/or method in accordance with at least one embodiment of the invention.
  • Electronic device 700 is merely one example of an electronic system in which embodiments of the present invention can be used. Examples of electronic devices 700 include, but are not limited to personal computers, tablet computers, mobile telephones, game devices, MP3 or other digital music players, etc.
  • electronic device 700 comprises a data processing system that includes a system bus 702 to couple the various components of the system.
  • System bus 702 provides communications links among the various components of the electronic device 700 and can be implemented as a single bus, as a combination of busses, or in any other suitable manner.
  • An electronic package 710 is coupled to system bus 702.
  • the electronic package 710 can include any circuit or combination of circuits (e.g., electronic package 100 or electronic package 400).
  • the electronic package 710 includes a processor 712 which can be of any type.
  • processor means any type of computational circuit, such as but not limited to a microprocessor, a microcontroller, a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, a graphics processor, a digital signal processor (DSP), multiple core processor, or any other type of processor or processing circuit.
  • CISC complex instruction set computing
  • RISC reduced instruction set computing
  • VLIW very long instruction word
  • DSP digital signal processor
  • circuits that can be included in electronic package 710 are a custom circuit, an application-specific integrated circuit (ASIC), or the like, such as, for example, one or more circuits (such as a communications circuit 714) for use in wireless devices like mobile telephones, personal data assistants, portable computers, two-way radios, and similar electronic systems.
  • ASIC application-specific integrated circuit
  • the IC can perform any other type of function.
  • the electronic device 700 can also include an external memory 720, which in turn can include one or more memory elements suitable to the particular application, such as a main memory 722 in the form of random access memory (RAM), one or more hard drives 724, and/or one or more drives that handle removable media 726 such as compact disks (CD), flash memory cards, digital video disk (DVD), and the like.
  • a main memory 722 in the form of random access memory (RAM)
  • hard drives 724 and/or one or more drives that handle removable media 726 such as compact disks (CD), flash memory cards, digital video disk (DVD), and the like.
  • removable media 726 such as compact disks (CD), flash memory cards, digital video disk (DVD), and the like.
  • the electronic device 700 can also include a display device 716, one or more speakers 718, and a keyboard and/or controller 730, which can include a mouse, trackball, touch screen, voice-recognition device, or any other device that permits a system user to input information into and receive information from the electronic device 700.
  • Example 1 includes an electronic package including a through-mold interconnect including a package assembly having a substrate including a first substrate surface, the first substrate surface including a conductive layer attached to the first substrate surface, a die communicatively coupled to the conductive layer; a contact block including a first contact surface on one end of the contact block, a second contact surface on an opposing side of the contact block, and a contact block wall extended therebetween, wherein the contact block includes a conductive material and the first contact surface is coupled to the package assembly with a joint located partially along the contact block wall; and an overniold covering portions of the substrate, conductive layer, and die, wherein the second contact surface of the contact block is exposed through the overniold.
  • a through-mold interconnect including a package assembly having a substrate including a first substrate surface, the first substrate surface including a conductive layer attached to the first substrate surface, a die communicatively coupled to the conductive layer; a contact block including a first contact surface on one end of the contact block, a
  • Example 2 includes the electronic package of example 1, wherein the contact block is thermally conductive and configured as a heat sink.
  • Example 3 includes the electronic package of any one of examples 1-2, wherein the joint couples the contact block to the conductive layer, the die, or both.
  • Example, 4 includes the electronic package of any one of examples 1-3, wherein the cross sectional area of the conductive material on the contact block exceeds 0.05 mm 2 .
  • Example 5 incudes the electronic package of any one of examples 1-4, wherein a coefficient of thermal conductivity of the contact block exceeds 80 W-m-'-k- 1 ,
  • Example 6 includes the electronic package of any one of examples 1-5, wherein the contact block includes a height exceeding 200 urn.
  • Example 7 includes the electronic package of any one of examples 1 -6, wherein the contact block is magnetic.
  • Example 8 includes a method of making an electronic package having a contact block including: constructing a package assembly including: attaching a conductive layer to a substrate, attaching a die to the conductive layer; placing one or more contact blocks on the package assembly, each contact block including a first contact surface on a first end of the contact block, a second contact surface on an opposing second contact end of the contact block, and a contact block wall extended therebetween; coupling the one or more contact blocks to the package assembly, wherein a joint is located partially along the contact block wall; and covering a portion of the package assembly including a portion of the substrate, exposed conductive layer, and die with an overmold, wherein the second contact surface of the contact block remains exposed through the overmold.
  • Example 9 includes the method of making an electronic package of example 8, further comprising coupling a structure on the second contact surface of at least one contact block and on top of the overmold, wherein coupling the conductive structure includes coupling a thermally conductive structure configured as a heat sink.
  • Example 10 includes the method of making an electronic package of any one of examples 8-9, further comprising laminating an electrically conductive structure on the top of the overmold and in electrical communication with at least one contact block, the electrically conductive structure configured as an antenna.
  • Example 1 I includes the method of making an electronic package of any one of examples 8-10, wherein placing the contact block includes placing a contact block including a total cross sectional area of conductive material exceeding 0.05 mm 2 .
  • Example 12 includes the method of making an electronic package of any one of examples 8-11 , wherein placing the contact block includes placing a contact block including a coefficient of thermal conductivity exceeding 80 W-m "
  • Example 3 includes the method of making an electronic package of any one of examples 8-12, wherein placing the contact block includes placing a magnetic contact block.
  • Example 14 includes a method of forming an aperture in an electronics package including: constructing a package assembly including; attaching a conductive layer to a substrate; attaching a die to the conductive layer; coupling one or more contact blocks to the package assembly, each contact block including a first contact surface on a first end of the contact block, a second contact surface on an opposing second contact end of the contact block, and a contact block wall extended therebetween, wherein the contact block includes a conductive material and the first contact surface is coupled to the package assembly at a joint located partially along the contact block wall; covering a portion of the package assembly including a portion of the substrate, exposed conductive layer, and die with an overrnold, wherein the second contact surface of the contact block remains exposed through the overrnold; and removing at least one of the contact blocks to form an aperture in the overrnold.
  • Example 5 includes the method of example 14, wherein removing the contact block includes exposing a surface of the die.
  • Example 16 includes the method of any one of examples 14-15, wherein removing the contact block includes exposing a surface of the conductive layer.
  • Example 17 includes the method of any one of examples 14-16, wherein attaching the one or more contact blocks to the package assembly includes coupling at least one contact block to a component, wherein the component is coupled to the conductive layer.
  • Example 18 includes the method of any one of examples 14-17, wherein the component is selected from a group consisting of: an optical sensor, environmental sensor, capacitive sensor, or electrical sensor.
  • Example 19 includes the method of any one of examples 14-18, wherein the component includes a Fresnel lens.
  • Example 20 includes the method of examples 14-19, wherein the component includes metamaterial.
  • Example 21 includes the method of any one of examples 14-21, further comprising locating a component within the aperture and coupling the component to an exposed porti on of the conductive layer or the die within the aperture, the component selected from a group consisting of: a Fresnel lens, optical sensor, environmental sensor, capacitive sensor, or electrical sensor.
  • Examples 22 includes an electronic package including a through-mold interconnect including: a package assembly including: a substrate including a first substrate surface, the first substrate surface including a conductive layer attached to the first substrate surface; a die communicatively coupled to the conductive layer, a contact block assembly including: a carrier including a first carrier surface, a second carrier surface, and a carrier wall extended between the first carrier surface and the second carrier surface, wherein the carrier includes at least one interstice extended from the first carrier surface to the second carrier surface, at least one contact block located within the interstice of the carrier, the at least one contact block having a first contact surface on one end of the contact block and a second contact surface on an opposing side of the contact block, wherein the contact block includes a conductive material and the first contact surface is coupled to the package assembly with a joint located partially along the carrier wall; and an overmold covering the package assembly, the overmold covering a portion of the substrate, conductive layer, and die, wherein the second contract surface is exposed through the overmold
  • Example 23 includes the electronic package of example 22, wherein the carrier includes a material having a loss tangent between 0.002 and 0.007.
  • Example 24 includes the electronic package of any one of examples 22-
  • Example 25 includes the electronic package of any one of examples 22 -
  • Example 26 includes the electronic package of any one of examples 22-
  • the present inventors also contemplate examples in which only those elements shown or described are provided. Moreover, the present inventors also contemplate examples using any combination or permutation of those elements shown or described (or one or more aspects thereof), either with respect to a particular example (or one or more aspects thereof), or with respect to other examples (or one or more aspects thereof) shown or described herein. In the event of inconsistent usages between this document and any documents so incorporated by reference, the usage in this document controls.
  • Method examples described herein can be machine or computer- implemented at least in part. Some examples can include a computer-readable medium or machine-readable medium encoded with instructions operable to configure an electronic device to perform methods as described in the above examples.
  • An implementation of such methods can include code, such as microcode, assembly language code, a higher-level language code, or the like. Such code can include computer readable instructions for performing various methods. The code may form portions of computer program products. Further, in an example, the code can be tangibly stored on one or more volatile, non- transitory, or non-volatile tangible computer-readable media, such as during execution or at other times.
  • Examples of these tangible computer-readable media can include, but are not limited to, hard disks, removable magnetic disks, removable optical disks (e.g., compact disks and digital video disks), magnetic cassettes, memory cards or sticks, random access memories (RAMs), read only memories (ROMs), and the like.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

A package assembly can include a substrate having a first substrate surface. The first substrate surface including a conductive layer attached to the first substrate surface. The package assembly includes a die communicatively coupled to the conductive layer and a contact block. The contact block including a first contact surface on one end of the contact block, a second contact surface on an opposing side of the contact block, and a contact block wall extended therebetween. The contact block includes a conductive material. The first contact surface is coupled to the package assembly with a joint extended partially up the contact block wall. An electronic package further includes the package assembly and an overmold covering portions of the substrate, conductive layer, and die. The second contact surface of the contact block is exposed through the overmold.

Description

PRIORITY APPLICATION
This application claims the benefit of priority to U.S. Application Serial No. 14/973,184, filed December 17, 2015, which is incorporated herein by reference in its entirety.
TECHNIC AL FIELD
This document pertains generally, but not by way of limitation, to electronic packaging, such as molded microelectronic packaging.
Electronic packages, such as electronic packages including through-mold vias, can include vias within an overmold of the electronic package. For instance the through-mold vias can electrically couple a first die to a second die to provide electrical communication between the first and second dies.
Constructing the through-mold vias can include laser drilling the overmold to expose an area of conductive material on a substrate of the electronic package. The laser drilling operation can produce an opening through the overmold. Through-mold vias can be constructed within the opening by a plating process applied to the electronic package. In an example, one or more layers of conductive material can be electroplated on the exposed conductive area, filling at least a portion of the opening in the overmold. In an example, solder paste or conductive ink can be deposited within the opening to create an electrically conductive through-moid via. It is desirable to improve through-mold interconnections, through-mold functionality, and methods for the same.
BRIEF DESCRIPTION OF THE DRAWINGS
In the drawings, which are not necessarily drawn to scale, like numerals may describe similar components in different views. Like numerals having different letter suffixes may represent different instances of similar components.
3 The drawings illustrate generally, by way of example, but not by way of limitation, various embodiments discussed in the present document.
Figure 1 is a cross section view of an electronic package in accordance with some embodiments.
Figures 2A-D illustrate a process diagram of a method of constructing a through-mold interconnect in accordance with some embodiments.
Figures 3A-D illustrate a process diagram of a method of forming an
aperture in an overmold in accordance with some
embodiments.
Figure 4 is a cross section view of an electronic package including a through-mold interconnect having a carrier in accordance with some embodiments.
Figures 5A-E illustrate a process for constructing a through-mold
interconnect within a carrier in accordance with some embodiments.
Figures 6A-C illustrates an exemplary a process for constructing a through- mold interconnect including an insulator within a carrier, Figure 7 is a block diagram of an electronic device incorporating at least one contact block and/or method in accordance with at least one embodiment.
DETAILED DESCRIPTION
The following description and the drawings sufficiently illustrate specific embodiments to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. Portions and features of some embodiments may be included in, or substituted for, those of other embodiments. Embodiments set forth in the claims encompass all available equivalents of those claims.
Figure 1 is cross section of an exemplary electronic package 100 including a through mold interconnect, such as a through-mold via including a z contact block 102. The electronic package 100 can include a substrate 104, The substrate 104 can include one or more conductive layers 106. At least one conductive layer 106 can be located on a first substrate surface 108. For instance, the conductive layer 106 can be attached to (e.g., laminated on) an upper or lower surface of the substrate 104. A die 110 can be coupled to the conductive layer 106. For instance, the die 110 can include at least one contact attached to the conductive layer 106. For instance, the die 110 can be attached to the conductive layer 106 with conductive adhesive or solder. The die 1 10 can be in electrical communication with other elements of the electronic package 100 or other electronic devices coupled to the electronic package 100 through the conductive layer 06. A package assembly (as shown and described further herein) can include the substrate 104, the conductive layer 106, and the die 1 10, The contact block 102 can include a first contact surface 1 12 on one end of the contact block 102 and a second contact surface 1 14 on an opposing end of the contact block 102. A contact block wall 1 16 extends between the first contact surface 112 and the second contact surface 1 14. The contact block 102 can be coupled to the package assembly. For instance, the contact block 102 can be coupled to the conductive layer 106, the die 1 10, or the substrate 104,
Optionally, the electronic package 100 include a plurality of contact blocks 102 coupled to the conductive layer 106, die 110, substrate 104, or any combination thereof. The contact block 102 can be coupled to the package assembly by a joint 118. An overmold 120 can be applied to the package assembly. At least a portion of the substrate 04, the conductive layer 106, and the die 110 can be covered by the overmold 120. The second contact surface 114 can be exposed through the overmold 120. As shown in the example of Figure 1, the electronic package 100 can optionally include a structure 122 coupled to the second contact surface 114. In one example, the structure 122 can be coupled to the overmold 120. For instance, the structure 122 can be coupled to the upper surface of the overmold 120 as shown in Figure 1.
The contact block 102 can communicate electrical signals or thermal energy from the conductive layer 06 or die 1 0 to the structure 122. For instance, the contact block 102 can be electri cally conductive, thermally conductive, or both. In some examples, the contact block 102 can include, but is not limited to, a batter}- contact, heat sink, signal contact, or the like. In one example the contact block 102 can include a cross sectional area greater than the cross sectional area of an electrodeposited (plated) through-mold via, such as a cross sectional area of 0.05 mm2 or greater. In other words, the contact block can include a cross-sectional dimension of 250 microns or greater. Increasing the cross sectional area of the contact block 102 can provide for greater power transmission or heat transfer through the contact block 102, Where the contact block 102 includes a battery contact or a heatsink, increasing the cross sectional area of the contact block 102 can improve the operation of the batter}' contact or heatsink. The contact block 102 can include a height of 0.20 mm to 1.0 mm or a height exceeding 1.0 mm. In one example, taller contact blocks 102 can extend (and be exposed) through the overmold 120 of taller electronics packages 100. In one example, less space within the electronics package 100 can be used by a contact block 102 having a vertical sidewalk In other words, limitations of one process for fabricating the contact block 102 (e.g., by laser drilling and/or electroplating) can be avoided by fabricating the contact block 102 by processes other than those used in printed circuit board fabrication and assembly.
The shape of the contact block 102 can be any shape that has sufficient stability for placement on the conductive pad layer 106. For instance, the contact block 102 can include, but is not limited to, a cylindrical, rectangular, hollow cylinder, or other. In one or more examples, the contact block 102 can include a complex geometry 124. The complex geometry 124 can be included in the electronics package 100 by fabricating the contact block 102 outside of the overmold 120. For instance, complex geometries 124 as referred to herein can include, but are not limited to, a truss, spiral, threaded bushing, anchor (e.g., dovetail), microfluidic conduit, bouie, spheroid, hourglass, nozzle, mesh, grid, convoluted shape, or other. The complex geometry 124 can be included on the contact black wall 1 16 or internal to the contact block 102. For instance, the contact block 102 can include a geometry configured as a microfluidic conduit, staictural reinforcement, threaded bushing, electromagnetic shield, filter, metamaterial, or the like. In the example of Figure 1, the contact block 102 can include a complex geometry 124 configured as a microfluidic cavity. For instance, the contact block 102 can include complex geometry 124 including an internal cavity. The internal cavity can have an aperture located on the second contact surface 114. The width of the cavity on the first contact surface 1 2 or internally to the contact block 102 can be greater than the width of the aperture. In one example, the shape of the second contact surface 114 can differ from the shape of the first contact surface 112. In another example, the shape of the second contact surface 114 can differ from the shape of the contact block 102 between the first contact surface 1 12 and the second contact surface 114. In a further example, the contact wall 1 16 can be non-symmetrical.
In one example, the contact block 102 can be fabricated (e.g., prefabricated) from materials including, but not limited to, copper, nickel, tin, zinc, silver, gold, or any combination thereof. For instance the contact block 102 can include a thermal conductivity of 35-500 W-m'^k"1 or an electrical conductivity of 15 x 106 - 65 x 106 Q'^m'1. In one example, the thermal conductivity of the contact block 102 can exceed 80 W-m^-k"1. Accordingly, greater heat transfer can be achieved through the contact block 102 as compared to correspondingly sized and shaped through-mold interconnects including various solder compositions. The contact block can be fabricated by a process including, but not limited to, cold working, casting, die casting, forging, extrusion, sintering, or the like. Accordingly, the contact block 102 can be substantially free of voids, cracks and include a substantially planar first contact surface 112 and second contact surface 114. In one example, the contact block 02 can include a homogeneous microstructure. In one example, the contact block 102 can be magnetic. A magnetic contact block 102 can be configured as a sensor, antenna, inductor (e.g., inductor core), or other. In one example, the contact block 102 can be coated with a material (e.g., a carrier material or insulator material as further described herein) for decreasing the frequency loss of electrical signals through the contact block 102. For instance, the contact block 102 can be coated with a Liquid Crystal Polymer (LCP), epoxy resin, or other material with good frequency loss characteristics. In one example the contact block 102 can be coated with solder or plated with nickel, for instance, to improve solder wettability. In one example the contact block 102 can include a composite material. Accordingly, by including the contact block 102 in the electronic package 100, a portion of the overmold volume can be used for an antenna, battery contact, heat sink, inductor, or the like.
Figures 2A-D illustrate an exemplar}' process 200 for constructing an electronic package 100 having a through-mold interconnect including a contact block 102. Figure 2A illustrates a package assembly 202 created by the process 200. Figure 2B shows a plurality of contact blocks 102 coupled to the conductive layer 106 of the package assembly 202. An overmold can be formed on the package assembly 202 and partially around the one or more contact blocks 102 as depicted in Figure 2C. Figure 2D shows one or more structures 22 coupled to the second contact surface 114 and optionally the overmold 120.
As shown in Figure 2A, the package assembly 202 can include the substrate 104, the conductive layer 106, and the die 1 10. The conductive layer 106 can be coupled to the substrate 104 in one or more ways. In one example, the conductive layer 106 can be electrodeposited (electroplated) on to the first substrate surface 108. In one example, the conductive layer 106 can include a foil sheet that can be attached to (e.g., laminated on) the first substrate surface 108 with an adhesive. In one example, the conductive layer 106 can be printed on to the substrate 104, for instance with an Inkjet printer. Once the conductive layer 106 is coupled to the substrate 104, the conductive layer 106 can then be etched to create contacts, solder pads, circuit traces, or the like. In one example, a cover layer (e.g., solder resist) can be attached on the conductive layer 106 and the substrate 04. For instance, the cover layer can be laminated over the conductive layer 106 and the substrate 104. One or more openings can be included in the cover layer to expose the conductive layer 106, for example, to expose solder pads, contacts, electrodes, or the like.
The substrate 104 can include a single sided, double sided, or multi-layer construction. For instance, the substrate 104 can have dielectric layers fabricated from materials including, but not limited to, FR-4, prepreg, ceramic, epoxy, other glass or fiber filled resin, or the like. The substrate 104 can provide mechanical support for the electronic package 100, a platform for routing circuits, thermal distribution, or electromagnetic shielding, among other things.
At least one conductive layer 106 can be attached on each dielectric layer. For instance, each dielectric layer can be interposed between conductive layers 106 to form alternating dielectric and conductive layers 106. The conductive layer 106 can be fabricated from conductive materials including, but not limited to, cold-rolled copper, electrodeposited copper, or other conductive materials or foils. In one example, the conductive layer 106 can include a copper clad laminate. Electrical signals and thermal energy can be communicated through the conductive layer 106 to the one or more contact blocks 102,
The process 200 can further include coupling a die 110 to the conductive layer 106 as shown in the example of Figure 2 A . The die 1 0 can include one or more contacts coupling the die 110 to the conductive layer 106. The one or more contacts can include, but are not limited to, at least one surface mount lead, a ball grid array, land grid array, or the like. In one example, the contact of the die 110 can be soldered to the conductive layer 106. For instance, the die 110 can be placed (e.g., by a pick-and-place machine) on solder paste deposited over the conductive layer 106. The die 110 can then be soldered to the conductive layer 106 by passing the package assembly 202 through an oven, such as a reflow oven or infrared oven. The die 110 can include a circuit, such as an integrated circuit. In one example, the die 110 can be fabricated from a silicon wafer, gallium arsenide, or other semiconductor. The die 110 can include, but is not limited to, a processor, microprocessor, random access memory, radio, arithmetic unit, or the like. The die 110 can be in electrical communication with one or more conductive layers 106 through the contact.
As shown in the example of Figure 2B, the contact black 102 (as previously described herein) can be coupled to the conductive layer 106 with the joint 1 18. The contact block 102 can be fabricated prior to placement or coupling to the conductive layer 106. In other words, the contact block 102 can be prefabricated. For instance, the joint 118 can be fabricated from a material (hereinafter joint material) including, but not limited to, solder, flux, adhesive, thermally conductive adhesive, electrically conductive adhesive, or the like. The joint material can be deposited on the package assembly 202, such as on the substrate 104, the conductive layer 106, or the die 1 10. The contact block 102 can be placed on the joint material. For instance, the contact block 102 can be placed with a pick-and-place machine as previously described. Time and cost can be saved by placing the contact block 102 on to the package assembly 202 as compared to fabricating the through-mold interconnect by electrodepositing one or more layers of conductive material on the package assembly 202. For instance, time and cost can be saved particularly where the contact block includes increased cross sectional area, three-dimensional complexity, and/or height. In another example, time and cost can be reduced by eliminating process steps. For instance, the die 1 0 or other components are placed on the conductive layer 106. The contact block 02 can also be placed with the same equipment and during the same placement session as the die 110 or other components.
In one example, the joint material can include solder. The joint 18 can be formed by passing the joint material through an oven to solder the contact block 102 to the package assembly 202 (e.g., solidify the solder), A portion of the joint 118 can be coupled to the contact block wall 116, For instance, the joint 1 18 can extend partially up the contact wall 116 or be located partially along the contact wall 1 16. In one example, the joint 1 18 can include a fillet shape having one end of the fillet on the contact block wall 116 and the other end of the fillet along the package assembly 202. In one example, the joint 118 can be located between the first contact surface 112 and the packages assembly 202,
In one example, the joint material can include an adhesive or other tacky substance to hold the contact block 102 in place. In one example, the joint material can be cured to create a joint 1 18 that is solid. In other examples the joint material can be uncured. In other words, the joint material can include a tacky characteristic holding the contact block 102 in place, but can remain somewhat viscous, for instance, to allow easier removal of the contact block 102 and/or the joint 1 18, As previously described, the joint 118 can extend partially up the contact block wall 116 or can be located partially along the contact wall 1 16. The joint 1 18 can increase the robustness of the electronics package 100 due to the increased cross sectional area of the joint 118 where the contact block 102 is coupled to the package assembly 202. Robustness can also be increased by the joint 118 by reducing a stress concentration factor (e.g., minimizing sharp corners) at the junction of the contact block 102 and the package assembly 202.
As shown in the example of Figure 2C, the overmold 120 can be applied to the package assembly 202 and the contact block 102. For instance, the overmold 120 can cover at least a portion of the substrate 104, a portion of the conductive layer 106, or a portion of the die 1 10. In the example of Figure 2C, the overmold 120 can cover the upper side of the package assembly 202 and surround the contact block wall 116. The overmold 120 can be formed or placed on the package assembly 202. For instance, the overmold 120 can be molded on the package assembly 202, for example, encapsulated, compression molded, or other in situ fabrication process. The overmold 120 can be fabricated from materials including, but not limited to, a thermoset, epoxy, thermoplastic, polymer, or the like. The overmold 120 can include dielectric characteristics mitigating electrostatic discharge, shorting, or the like. The electronic package 100 can be protected by the additional mechanical strength added by the overmold 120. The die 1 0 or electrical components can be shielded from potential contact and damage. The second contact surface 114 can be exposed through the overmold 120. In one example, the second contact surface 114 can be substantially aligned (flush ) with the upper surface 204 of the overmold 20. In one example, the second contact surface can be covered by the overmold 120. The upper surface of the overmold 120 can be removed to expose the contact block 102. For instance, the upper surface 204 can be machined or ground to expose the second contact surface 114.
As shown in the example of Figure 2D, one or more structures 122 can be coupled to the second contact surface 14, the upper surface 204 of the overmold 120, or both. The structure 122 can be coupled to the second contact surface 1 14 or upper surface 204 by plating (or electrodepositing), sputtering, printing, laminating, adhering, or other bonding process. In one example, the structure 122 can be placed on the second contact block surface 114 or upper surface 204. For instance, the structure 122 can be prefabricated and placed with a pick-and-place machine. The structure 22 can be coupled to the second contact block surface 1 14 or the upper surface 204 with adhesive or solder. The substantially flush (and flat) second contact surface 1 14 can facilitate the coupling of the structure 122. For instance, the flat and aligned second contact surface 1 14 and upper surface 204 can promote uniform bonding.
The structure 122 can include, but is not limited to, an antenna, heatsink, sensor, inductor, circuit, or other. For instance, a layer of conductive material, such as copper, can be attached to (e.g., laminated on) the second contact surface 1 14 and/or the upper surface 204. The conductive material can then be etched to create a geometry tuned as an antenna. The conductive material can be in electrical communication with the second contact surface 1 14 to transmit or receive signals through the antenna. Electrical circuits or inductor coils can be created in a similar lamination and etching process. In one example, the structure 122 can be configured as a heat sink. For instance, the structure 122 can include a thermally conductive material, such as aluminum, copper, zinc, or the like. The structure 122 can include a surface area configured to dissipate heat. For instance, the structure 122 can include fins or other geometry to increase surface area and accordingly increase heat dissipation.
Figures 3A-D show an exemplary process 300 for creating an aperture 304 in the overmold 120 of the electronic package 100. The process 300 illustrated in Figures 3A-D can include any or all of the steps shown in figures 2A-D and described herein. For instance, in the example of Figure 3 A, a component 302 can be placed on the package assembly 202 (e.g., by a pick-and- place machine as previously described herein). The component 302 can be coupled to the substrate 104, the conductive layer 106, or the die 1 10 with solder, flux, solder paste, adhesive, electrically conductive adhesive, thermally conductive adhesive, or the like. In one example, the component 302 can be coupled to the conductive layer 106 located on the first substrate surface 108. In one example, the component 302 can be coupled to an internal conductive layer 106 (e.g., a conductive layer 106 located within the substrate 104 and interposed between two dielectric layers). For instance, the substrate 104 can include a cavity. The component 302 can be coupled to one or more of the internal conductive layers 106 exposed by the cavity. The component 302 can be located flush, below, or partially below the first substrate surface 108.
The component 302 can include, but is not limited to, a lens (e.g. Fresnel lens), a sensor (e.g., an optical sensor or environmental sensor), a metamaterial element, inductor, magnetic element (e.g., core), 3D printed component, discrete active, passive, or other type of component. The component 302 can include a solder wettable surface to facilitate coupling the component 302 to the package assembly 202 with solder.
As shown in Figure 3B, the contact block 102 can be coupled to the component 302. An adhesive or tacky substance can be applied or deposited on the component 302 to couple the contact block 102 to the component 302. The contact block 102 can be placed on the component 302, such as on the adhesive or tacky substance on the component 302. In one example, the contact block 102 can be placed on the component 302 with a pick-and-place machine. The component 302 can include a mounting surface 306 to facilitate the stability of the contact block 102 located on the component 302. For instance, the mounting surface 306 can be planar and the first contact surface 112 of the contact block 102 can be correspondingly planar. In one example, the mounting surface 306 and the first contact surface 112 can include a self-centering feature, such as a conical or frustoconical surface that can engage a corresponding mating feature on the opposing element.
Figure 3C shows an example of an overmold 120 applied on the package assembly 202 and surrounding the contact block 102 as previously described. The second contact surface 114 can be exposed through the upper surface 204 of the overmold 120. The contact block 102 can be removed from the overmold 120 as shown in Figure 3D. For instance, the contact block 102 can be removed by a chemical etching process. The removal of the contact block 102 can create an aperture 304 within the overmold 120, The aperture 304 can expose all or a portion of the conductive layer 106, the component 302, the die 1 10, or other element. Exposed portions of the conductive layer 106 can be electrical contacts, electrodes, or other contacts. In some examples, removing the contact block 102 by etching can be more time and/or cost efficient than other methods of forming an aperture 304 in the overmold 120, such as mechanical or laser drilling.
In one example, removing the contact block 102 located on the component 302 can create an aperture 304 over the component 302. For instance, the aperture 304 can provide a sensor or lens with access to the exterior of the electronic package 100. In one example, removing the contact block 102 can also include removing a portion of the component 302, such as a sacrificial portion of the component 302, A cleaning process can follow the removal of the contact block 102, for instance, to remove any remaining solder, flux, adhesive, or other particulate on the mounting surface 306 of the component 302,
Figure 4 shows an example of an electronics package 400 including a contact block assembly 402, The electronics package 400 can include the package assembly 202, as previously described herein. The contact block assembly 402 can include a carrier 404 and one or more contact blocks 102. In one example, a coating can be located between the contact block 102 and the carrier 404 (as shown in Figures 6A-E and described further herein). The contact block assembly 402 can be coupled to the package assembly 202 with solder or an adhesive. For instance, the contact block assembly 402 can be coupled to the substrate 104, the conductive layer 106, or the die 1 10. The overmold 120 can be applied to the package assembly 202 and around the contact block assembly 402.
The carrier 404 can include a first carrier surface 406 and a second carrier surface 408. A carrier wall 410 can extend from the first carrier surface 406 to the second carrier surface 408. As shown in the example of Figure 4, the first carrier surface 406 can be coupled to the package assembly 202 and the second carrier surface 408 can be exposed through the overmold 120, The carrier 404 can be fabricated from a material including, but not limited to, a polymer (e.g., poiyamide or LCP), epoxy, FR-4, prepreg, an elastomer, or the like. The carrier 404 can include one or more interstices 412. The interstice 412 can extend from the first carrier surface 406 to the second carrier surface 408 and can accommodate a contact block 102 (such as the contact block 102 previously described herein). In one example, the contact block 102 can extend from the first carrier surface 406 to the second carrier surface 408. For instance, the first contact surface 1 12 of the contact block 102 can be substantially aligned with the first carrier surface 406 and the second contact surface 114 can be substantially aligned with the second carrier surface 408. In one example, the first contact surface 112 can be located at a distance from the first carrier surface 406, or the second contact surface 114 can be located at a distance from the second carrier surface 408, or both.
In one example, a component 302 (as previously described) can located within the carrier 404. For instance, the component 302 can be located within the interstice 412 of the carrier 404, or the component 302 can be insert molded into the carrier 404. In one example, other elements can be located within the carrier 404, such as 3D printed parts or the like. In one example, a lens, such as a Fresnel lens can be molded into the carrier 404. The component 302 or the carrier 404 can include a solder wettable surface for coupling the contact block assembly 402 to the conductive layer 106.
The contact block assembly 402 can provide support for a plurality of contact blocks 102. For instance, the contact block assembly 402 can include one or more contact blocks 102 having a combined cross sectional area of at least 0.05 mm2. The carrier 404 can increase the robustness and flexibility of the electronic package 400. For instance, the plurality of contact blocks 102 can provide redundancy for electrical signal communication. Including a plurality of smaller contact blocks 102 in place of a single larger contact block 102 can improve the flexibility of the contact block assembly 402 and result in a larger cross sectional area of the contact blocks 102 in combination. The risk of voids, cracks, or shrinkage can be reduced by including the contact blocks (e.g., prefabricated contact blocks 102) in the contact block assembly 402. For instance, a fabrication process that includes a lower risk of voids, cracks, or shrinkage can be used in the creating of the contact block 102. In the example of Figure 4, the structure 122 (as previously described herein) can be placed, attached, or laminated on the second carrier surface 408, the second contact surface 114, the overmold 120, or any combination thereof. Figures 5A-E illustrate an exemplar}' process 500 for constructing a contact block assembly, such as the contact block assembly 402 (as previously described). As shown in Figure 5 A, the carrier 404 can be coupled to a support 504 by an adhesive 506. For instance, the carrier 404 can be coupled to the support 504 along the first carrier surface 406. One or more interstices 412 can be located within the carrier 404. The interstice 412 can extend from the first carrier surface 406 to the second carrier surface 408. The interstice 412 can be created by a number of processes including, but not limited to, laser drilling, punching, or molding the interstice 412 into the carrier 404 during fabrication. The support 504 can include any substantially rigid member having a substantially flat surface along an upper side to hold the carrier 404 flat. For instance, the support 504 can include, but is not limited to, a panel fabricated from steel, aluminum, ceramic, polymer, or the like.
As shown in Figure 5B, a conductive material 508 can be deposited on the second carrier surface 408 and in the interstice 412. For instance, the conductive material 508 can be dispensed in a liquid state through a nozzle, printed, sputtered, or spread along the second carrier surface 408 and can fill the interstice 412. The conductive material 508 can include, but is not limited to, copper, tin, lead, aluminum, steel, gold, silver, or any combination thereof. The volume of conductive material 508 deposited on the carrier 404 can be less than, substantially equal to, or greater than the combined volume of each interstice 412. In the example of Figure 5B, the volume of conductive material 508 can be greater than the combined volume of each interstice 412. A viscous
characteristic of the conductive material 508 can result in a substantially flat upper surface as the flow of conductive material 508 settles to a resting state. Accordingly, a sheet of conductive material 508 can be located on the second carrier surface 408. After the conductive material 508 is dispensed, it can solidify within the interstice 412 or on the second carrier surface 408.
As shown in the example of Figure 5C, the conductive material 508 can be removed from the second carrier surface 408. In one example, a portion of the carrier 404, such as the second carrier surface 408 can also be removed to create a planar surface along the upper side of the carrier 404. The conductive material 508 can be removed by a process including, but not limited to, chemical etching, machining, grinding, laser ablation, or the like. In one example, the conductive material 508 can be patterned on the second carrier surface 408, such as machined, laser etched, or chemically etched. For instance, a structure 122 (e.g., antenna, traces, or other) can be created from the conductive material 508 located on the second carrier surface 408.
As shown in Figure 5D, the support 504 and adhesive 506 can be removed from the first carrier surface 406. The adhesive can be removed by any mechanical or chemical process, such as a chemical bath dissolving the adhesive or a machining operation cutting the support 504 and the adhesive 506 from the carrier 404. Accordingly, the contact block assembly 402 can be created having one or more contact blocks 102 (e.g., fabricated from the conductive material 508) located within a lumen of the one or more interstices 412 of the carrier 404. The contact block assembly 402 can be divided into smaller contact block assemblies 402, as shown in the example of Figure 5E. For instance, the contact block assembly 402 can be cut with a router or laser drill to create smaller contact block assemblies 402 having fewer contact blocks 102, The contact block assembly 402 can be placed and/or coupled to the package assembly 202 and the overmold 120 can be applied. The contact block 102, the structure 122, or both can be exposed through the overmold 120.
Figures 6A-C show an exemplary process 600 for fabricating a contact block assembly 402 including an insulator 606 located between the contact blocks 102. The insulator 606 can improve communication through the contact block 102. For instance, the insulator 606 can reduce signal loss through the contact block 102, such as high frequency signal loss. In one example, the insulator 606 or carrier 404 can include a material having a loss tangent between 0.002 and 0.007. As shown in the example of Figure 6A, a interconnect base 602 can include one or more contact blocks 102 as previously described herein. For instance, the contact block 102 can be coupled to the interconnect base 602 with adhesive or solder or can be integral with the interconnect base 602. In one example, the contact block 02 can be fabricated on the interconnect base 602, such as electrodeposited, sputtered, printed, or the like. In one example, the contact block 102 can be coupled to the support 504. Where the interconnect base 602 or support 504 includes a plurality of contact blocks 102, the contact blocks 02 can be arranged in a pattern along the respective interconnect base 602 or support 504. For instance, the contact blocks 102 can include a linear, grid, radial, or randomized pattern along the interconnect base 602 or support 504. In the example shown in Figure 6A, the interconnect base 602 can be mounted on the support 504, for example, with adhesive, as previously described herein.
The carrier 404 can include at least one interstice 412. The interstice 412 can extend partially through the carrier 404. For instance, the interstice 412 can extend from the second carrier surface 408 toward the first carrier surface 406. Optionally, the interstice 412 can extend through the carrier 404 to the first carrier surface 406. The carrier 404 can be fabricated as previously described herein.
As shown in Figure 6A, an insulator material 604 can be deposited in the interstice 412. For instance, the insulator material 604 can be dispensed, injected, or printed into the interstice 412, The insulator material 604 can include, but is not limited to, a liquid epoxy resin, LCP, or other material having low loss characteristics (e.g., low loss tangent) at high signal frequencies. In one example, the insulator material 604 can be molded into the interstice 412 and can include a cured epoxy resin, solid LCP, glass-filed polyamide, or the like.
As shown in the example of Figure 6B, the interconnect base 602 can be inserted into the interstice 412. A fit between a lumen of the interstice 412 and the interconnect base 602 can be a close fit, such as a clearance fit. The volume of insulator material 604 located within the interstice 412 can be sufficient to fill a gap between the interconnect base 602 and the carrier 404 once the
interconnect base 602 is inserted into the interstice 412. Accordingly, a layer of insulator material 604 can be located around the interconnect base 602, between the contact block 102 and the carrier 404. In one example, the insulator material 604 can be cured or otherwise solidified to create the insulator 606.
Figure 6C shows an example where the interconnect base 602 can be removed from the contact block 02 to expose the second contact surface 1 14. In one example, the interconnect base 602 can be patterned on the second carrier surface 408, such as machined, laser etched, or chemically etched. For instance, a structure 122 (e.g., antenna, traces, or other) can be created from the interconnect base 602 located on the second carrier surface 408. The first carrier surface 406 can also be removed from the contact block assembly 102 to expose the first contact surface 1 12. Accordingly, the contact block assembly 402 can include one or more contact blocks 102 having the insulator 606 located between the contact block 102 and the carrier 404, In one example, the first carrier surface 406 and the second carrier surface 408 can be ground or polished to a smooth surface finish, A cleaning process can be applied to the first contact surface 112 or the second contact surface 114 to prepare the surfaces for soldering or adhesion to the package assembly 202, Accordingly, a through- moid interconnect with high frequency performance (i.e., reduced signal loss) can be created.
An example of an electronic device using semiconductor chip assemblies and solders as described in the present disclosure is included to show an example of a higher level device application for the present invention. Figure 7 is a block diagram of an electronic device 700 incorporating at least one solder and/or method in accordance with at least one embodiment of the invention. Electronic device 700 is merely one example of an electronic system in which embodiments of the present invention can be used. Examples of electronic devices 700 include, but are not limited to personal computers, tablet computers, mobile telephones, game devices, MP3 or other digital music players, etc. In this example, electronic device 700 comprises a data processing system that includes a system bus 702 to couple the various components of the system. System bus 702 provides communications links among the various components of the electronic device 700 and can be implemented as a single bus, as a combination of busses, or in any other suitable manner.
An electronic package 710 is coupled to system bus 702. The electronic package 710 can include any circuit or combination of circuits (e.g., electronic package 100 or electronic package 400). In one embodiment, the electronic package 710 includes a processor 712 which can be of any type. As used herein, "processor" means any type of computational circuit, such as but not limited to a microprocessor, a microcontroller, a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, a graphics processor, a digital signal processor (DSP), multiple core processor, or any other type of processor or processing circuit.
Other types of circuits that can be included in electronic package 710 are a custom circuit, an application-specific integrated circuit (ASIC), or the like, such as, for example, one or more circuits (such as a communications circuit 714) for use in wireless devices like mobile telephones, personal data assistants, portable computers, two-way radios, and similar electronic systems. The IC can perform any other type of function.
The electronic device 700 can also include an external memory 720, which in turn can include one or more memory elements suitable to the particular application, such as a main memory 722 in the form of random access memory (RAM), one or more hard drives 724, and/or one or more drives that handle removable media 726 such as compact disks (CD), flash memory cards, digital video disk (DVD), and the like.
The electronic device 700 can also include a display device 716, one or more speakers 718, and a keyboard and/or controller 730, which can include a mouse, trackball, touch screen, voice-recognition device, or any other device that permits a system user to input information into and receive information from the electronic device 700.
Various Notes & Examples
Each of these non-limiting examples can stand on its own, or can be combined in various permutations or combinations with one or more of the other examples. To better illustrate the method and apparatuses disclosed herein, a non-limiting list of embodiments is provided here:
Example 1 includes an electronic package including a through-mold interconnect including a package assembly having a substrate including a first substrate surface, the first substrate surface including a conductive layer attached to the first substrate surface, a die communicatively coupled to the conductive layer; a contact block including a first contact surface on one end of the contact block, a second contact surface on an opposing side of the contact block, and a contact block wall extended therebetween, wherein the contact block includes a conductive material and the first contact surface is coupled to the package assembly with a joint located partially along the contact block wall; and an overniold covering portions of the substrate, conductive layer, and die, wherein the second contact surface of the contact block is exposed through the overniold.
Example 2 includes the electronic package of example 1, wherein the contact block is thermally conductive and configured as a heat sink.
Example 3 includes the electronic package of any one of examples 1-2, wherein the joint couples the contact block to the conductive layer, the die, or both.
Example, 4 includes the electronic package of any one of examples 1-3, wherein the cross sectional area of the conductive material on the contact block exceeds 0.05 mm2.
Example 5 incudes the electronic package of any one of examples 1-4, wherein a coefficient of thermal conductivity of the contact block exceeds 80 W-m-'-k-1,
Example 6 includes the electronic package of any one of examples 1-5, wherein the contact block includes a height exceeding 200 urn.
Example 7 includes the electronic package of any one of examples 1 -6, wherein the contact block is magnetic.
Example 8 includes a method of making an electronic package having a contact block including: constructing a package assembly including: attaching a conductive layer to a substrate, attaching a die to the conductive layer; placing one or more contact blocks on the package assembly, each contact block including a first contact surface on a first end of the contact block, a second contact surface on an opposing second contact end of the contact block, and a contact block wall extended therebetween; coupling the one or more contact blocks to the package assembly, wherein a joint is located partially along the contact block wall; and covering a portion of the package assembly including a portion of the substrate, exposed conductive layer, and die with an overmold, wherein the second contact surface of the contact block remains exposed through the overmold.
Example 9 includes the method of making an electronic package of example 8, further comprising coupling a structure on the second contact surface of at least one contact block and on top of the overmold, wherein coupling the conductive structure includes coupling a thermally conductive structure configured as a heat sink.
Example 10 includes the method of making an electronic package of any one of examples 8-9, further comprising laminating an electrically conductive structure on the top of the overmold and in electrical communication with at least one contact block, the electrically conductive structure configured as an antenna.
Example 1 I includes the method of making an electronic package of any one of examples 8-10, wherein placing the contact block includes placing a contact block including a total cross sectional area of conductive material exceeding 0.05 mm2.
Example 12 includes the method of making an electronic package of any one of examples 8-11 , wherein placing the contact block includes placing a contact block including a coefficient of thermal conductivity exceeding 80 W-m"
Example 3 includes the method of making an electronic package of any one of examples 8-12, wherein placing the contact block includes placing a magnetic contact block.
Example 14 includes a method of forming an aperture in an electronics package including: constructing a package assembly including; attaching a conductive layer to a substrate; attaching a die to the conductive layer; coupling one or more contact blocks to the package assembly, each contact block including a first contact surface on a first end of the contact block, a second contact surface on an opposing second contact end of the contact block, and a contact block wall extended therebetween, wherein the contact block includes a conductive material and the first contact surface is coupled to the package assembly at a joint located partially along the contact block wall; covering a portion of the package assembly including a portion of the substrate, exposed conductive layer, and die with an overrnold, wherein the second contact surface of the contact block remains exposed through the overrnold; and removing at least one of the contact blocks to form an aperture in the overrnold.
Example 5 includes the method of example 14, wherein removing the contact block includes exposing a surface of the die.
Example 16 includes the method of any one of examples 14-15, wherein removing the contact block includes exposing a surface of the conductive layer.
Example 17 includes the method of any one of examples 14-16, wherein attaching the one or more contact blocks to the package assembly includes coupling at least one contact block to a component, wherein the component is coupled to the conductive layer.
Example 18 includes the method of any one of examples 14-17, wherein the component is selected from a group consisting of: an optical sensor, environmental sensor, capacitive sensor, or electrical sensor.
Example 19 includes the method of any one of examples 14-18, wherein the component includes a Fresnel lens.
Example 20 includes the method of examples 14-19, wherein the component includes metamaterial.
Example 21 includes the method of any one of examples 14-21, further comprising locating a component within the aperture and coupling the component to an exposed porti on of the conductive layer or the die within the aperture, the component selected from a group consisting of: a Fresnel lens, optical sensor, environmental sensor, capacitive sensor, or electrical sensor.
Examples 22 includes an electronic package including a through-mold interconnect including: a package assembly including: a substrate including a first substrate surface, the first substrate surface including a conductive layer attached to the first substrate surface; a die communicatively coupled to the conductive layer, a contact block assembly including: a carrier including a first carrier surface, a second carrier surface, and a carrier wall extended between the first carrier surface and the second carrier surface, wherein the carrier includes at least one interstice extended from the first carrier surface to the second carrier surface, at least one contact block located within the interstice of the carrier, the at least one contact block having a first contact surface on one end of the contact block and a second contact surface on an opposing side of the contact block, wherein the contact block includes a conductive material and the first contact surface is coupled to the package assembly with a joint located partially along the carrier wall; and an overmold covering the package assembly, the overmold covering a portion of the substrate, conductive layer, and die, wherein the second contract surface is exposed through the overmold.
Example 23 includes the electronic package of example 22, wherein the carrier includes a material having a loss tangent between 0.002 and 0.007.
Example 24 includes the electronic package of any one of examples 22-
23, wherein the carrier is an eiastomeric material.
Example 25 includes the electronic package of any one of examples 22 -
24, wherein the total cross sectional area of the one or more contact blocks exceeds 0.05 mm2.
Example 26 includes the electronic package of any one of examples 22-
25, wherein an insulator is disposed between the contact block and the carrier.
Each of these non-limiting examples can stand on its own, or can be combined in various permutations or combinations with one or more of the other examples.
The above detailed description includes references to the accompanying drawings, which form a part of the detailed description. The drawings show, by way of illustration, specific embodiments in which the invention can be practiced. These embodiments are also referred to herein as "examples," Such examples can include elements in addition to those shown or described.
However, the present inventors also contemplate examples in which only those elements shown or described are provided. Moreover, the present inventors also contemplate examples using any combination or permutation of those elements shown or described (or one or more aspects thereof), either with respect to a particular example (or one or more aspects thereof), or with respect to other examples (or one or more aspects thereof) shown or described herein. In the event of inconsistent usages between this document and any documents so incorporated by reference, the usage in this document controls.
In this document, the terms "a" or "an" are used, as is common in patent documents, to include one or more than one, independent of any other instances or usages of "at least one" or "one or more," In this document, the term "or" is used to refer to a nonexclusive or, such that "A or B" includes "A but not B," "B but not A," and "A and B," unless otherwise indicated. In this document, the terms "including" and "in which" are used as the plain-English equivalents of the respective terms "comprising" and "wherein." Also, in the following claims, the terms "including" and "comprising" are open-ended, that is, a system, device, article, composition, formulation, or process that includes elements in addition to those listed after such a term in a claim are still deemed to fall within the scope of that claim. Moreover, in the following claims, the terms "first," "second," and "third," etc. are used merely as labels, and are not intended to impose numerical requirements on their objects.
Method examples described herein can be machine or computer- implemented at least in part. Some examples can include a computer-readable medium or machine-readable medium encoded with instructions operable to configure an electronic device to perform methods as described in the above examples. An implementation of such methods can include code, such as microcode, assembly language code, a higher-level language code, or the like. Such code can include computer readable instructions for performing various methods. The code may form portions of computer program products. Further, in an example, the code can be tangibly stored on one or more volatile, non- transitory, or non-volatile tangible computer-readable media, such as during execution or at other times. Examples of these tangible computer-readable media can include, but are not limited to, hard disks, removable magnetic disks, removable optical disks (e.g., compact disks and digital video disks), magnetic cassettes, memory cards or sticks, random access memories (RAMs), read only memories (ROMs), and the like.
The above description is intended to be illustrative, and not restrictive. For example, the above-described examples (or one or more aspects thereof) may be used in combination with each other. Other embodiments can be used, such as by one of ordinary skill in the art upon reviewing the above description. The Abstract is provided to allow the reader to quickly ascertain the nature of the technical disclosure. It is submitted with
the understanding that it will not be used to interpret or limit the scope or meaning of the claims. Also, in the above Detailed Description, various features may be grouped together to streamline the disclosure. This should not be interpreted as intending that an unclaimed disclosed feature is essential to any claim. Rather, inventive subject matter may lie in less than all features of a particular disclosed embodiment. Thus, the following claims are hereby incorporated into the Detailed Description as examples or embodiments, with each claim standing on its own as a separate embodiment, and it is contemplated that such embodiments can be combined with each other in various
combinations or permutations. The scope of the invention should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.

Claims

THE CLAIMED INVENTION IS:
1. An electronic package including a through-mold interconnect
comprising:
a package assembly including:
a substrate including a first substrate surface, the first substrate surface including a conductive layer attached on the first substrate surface;
a die communicatively coupled to the conductive layer;
a contact block including a first contact surface on one end of the contact block, a second contact surface on an opposing side of the contact block, and a contact block wall extended therebetween, wherein the contact block includes a conductive material and the first contact surface is coupled to the package assembly with a joint located partially along the contact block wall; and
an overmold covering portions of the substrate, conductive layer, and die, wherein the second contact surface of the contact block is exposed through the overmold.
2. The electronic package of claim 1, wherein the contact block is thermally conductive and configured as a heat sink.
3. The electronic package of claim I, wherein the joint couples the contact block to the conductive layer, the die, or both.
4, The electronic package of claim 1 , wherein the contact block is magnetic,
5. The electronic package of any one of claims 1-4, wherein the cross
sectional area of the conductive material on the contact block exceeds 0.05 mm2.
6. The electronic package of claim 5, wherein a coefficient of thermal conductivity of the contact block exceeds 80 W-m"!-k"! .
7. The electronic package of claim 1, wherein the contact block includes a height exceeding 200 μιη.
8 The electronic package of claim I, wherein the contact block includes a complex geometry.
9. The electronic package of claim 8, wherein the contact block includes at least one element selected from a group consisting of: a microfluidic conduit, a structural reinforcement, a threaded bushing, an
electromagnetic shield, a filter,
10. A method of making an electronic package including a contact block comprising:
constructing a package assembly including:
attaching a conductive layer on a substrate,
attaching a die to the conductive layer;
placing one or more contact blocks on the package assembly, each contact block including a first contact surface on a first end of the contact block, a second contact surface on an opposing second contact end of the contact block, and a contact block wall extended therebetween;
coupling the one or more contact blocks to the package assembly, wherein a joint is located partially along the contact block wall; and
covering a portion of the package assembly including a portion of the substrate, exposed conductive layer, and die with an overmold, wherein the second contact surface of the contact block remains exposed through the overmold.
11. The method of making the electronic package of claim 10, further
comprising coupling a structure on the second contact surface of at least one contact block and on top of the overmold, wherein coupling the conductive structure includes coupling a thermally conductive structure configured as a heat sink.
The method of making the electronic package of claim 10, further comprising coupling an electrically conductive structure on the top of the overmold and in electrical communication with at least one contact block, the electrically conductive structure configured as an antenna.
The method of making the electronic package of claim 10, wherein placing the contact block includes placing a magnetic contact block.
The method of making the electronic package of any one of claims 10- 13, wherein placing the contact block includes placing a contact block including a total cross sectional area of conductive material exceeding 0.05 mm2.
The method of making the electronic package of claim 14, wherein placing the contact block includes placing a contact block including a coefficient of thermal conductivity exceeding 80 W-m"! -k"\
16. A method of forming an aperture in an electronics package comprising: constructing a package assembly including:
attaching a conductive layer on a substrate;
attaching a die to the conductive layer,
coupling one or more contact blocks to the package assembly, each contact block including a first contact surface on a first end of the contact block, a second contact surface on an opposing second contact end of the contact block, and a contact block wall extended therebetween, wherein the contact block includes a conductive material and the first contact surface is coupled to the package assembly at a joint located partially along the contact block wall; covering a portion of the package assembly including a portion of the substrate, exposed conductive layer, and die with an overmold, wherein the second contact surface of the contact block remains exposed through the overmold; and
removing at least one of the contact blocks to form an aperture in the overmold.
The method of claim 16, wherein removing the contact block includes exposing a surface of the die.
The method of claim 16, wherein removing the contact block includes exposing a surface of the conductive layer.
The method of any one of claim s 16-18, wherein attaching the one or more contact blocks to the package assembly includes coupling at least one contact block to a component, wherein the component is coupled to the conductive layer.
The method of claim 19, wherein the component is selected from a group consisting of: an optical sensor, environmental sensor, capacitive sensor, or electrical sensor.
21 The method of claim 19, wherein the component includes a Fresnel lens.
22. The method of claim 19, wherein the component includes metamaterial.
The method of claim 16, further comprising locating a component within the aperture and coupling the component to an exposed portion of the conductive layer or the die within the aperture, the component selected from a group consisting of: a Fresnel lens, optical sensor, environmental sensor, capacitive sensor, or electrical sensor.
PCT/US2016/060295 2015-12-17 2016-11-03 Through-mold structures Ceased WO2017105659A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636716B2 (en) 2015-12-17 2020-04-28 Intel Corporation Through-mold structures

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10424559B2 (en) * 2016-12-22 2019-09-24 Intel Corporation Thermal management of molded packages
EP3355667A1 (en) * 2017-01-30 2018-08-01 Siemens Aktiengesellschaft Method for producing an electrical circuit and electrical circuit
US10741477B2 (en) * 2018-03-23 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of forming the same
EP4002459A1 (en) * 2020-11-23 2022-05-25 Infineon Technologies AG Method for manufacturing an electrostatic discharge protection circuit and electrostatic discharge protection circuit
FR3139943B1 (en) * 2022-09-21 2024-09-06 Commissariat Energie Atomique Radiofrequency transmission and/or reception front-end module and associated manufacturing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110260334A1 (en) * 2007-07-17 2011-10-27 Hidenori Hasegawa Semiconductor device
US20130277821A1 (en) * 2012-04-19 2013-10-24 Sony Mobile Communications Ab Thermal package wth heat slug for die stacks
US20140035154A1 (en) * 2012-08-02 2014-02-06 Infineon Technologies Ag Chip package and a method for manufacturing a chip package
US20140225248A1 (en) * 2013-02-13 2014-08-14 Qualcomm Incorporated Power distribution and thermal solution for direct stacked integrated circuits
US20150348912A1 (en) * 2014-02-27 2015-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Metal Pad for Laser Marking

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335783A (en) * 1994-06-13 1995-12-22 Fujitsu Ltd Semiconductor device and semiconductor device unit
US6337265B1 (en) * 1999-09-03 2002-01-08 Teraconnect, Inc. Method for integration of integrated circuit devices
JP3772066B2 (en) * 2000-03-09 2006-05-10 沖電気工業株式会社 Semiconductor device
US6548895B1 (en) * 2001-02-21 2003-04-15 Sandia Corporation Packaging of electro-microfluidic devices
US7576000B2 (en) * 2006-12-22 2009-08-18 Palo Alto Research Center Incorporated Molded dielectric layer in print-patterned electronic circuits
US8067814B2 (en) * 2007-06-01 2011-11-29 Panasonic Corporation Semiconductor device and method of manufacturing the same
US7863090B2 (en) * 2007-06-25 2011-01-04 Epic Technologies, Inc. Packaged electronic modules and fabrication methods thereof implementing a cell phone or other electronic system
JP5341337B2 (en) * 2007-10-25 2013-11-13 スパンション エルエルシー Semiconductor device and manufacturing method thereof
JP2011517850A (en) * 2008-03-21 2011-06-16 ライズ・テクノロジー・エッセ・アール・エル Method for making microstructures by converting porous silicon into porous metals or ceramics
US8273603B2 (en) * 2008-04-04 2012-09-25 The Charles Stark Draper Laboratory, Inc. Interposers, electronic modules, and methods for forming the same
US7888184B2 (en) * 2008-06-20 2011-02-15 Stats Chippac Ltd. Integrated circuit packaging system with embedded circuitry and post, and method of manufacture thereof
US7838337B2 (en) * 2008-12-01 2010-11-23 Stats Chippac, Ltd. Semiconductor device and method of forming an interposer package with through silicon vias
US8508954B2 (en) * 2009-12-17 2013-08-13 Samsung Electronics Co., Ltd. Systems employing a stacked semiconductor package
US8500979B2 (en) * 2009-12-31 2013-08-06 Intel Corporation Nanogap chemical and biochemical sensors
DE102010029368B4 (en) * 2010-05-27 2026-02-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Electronic arrangement
WO2011155638A1 (en) * 2010-06-11 2011-12-15 Nec Corporation Method of redistributing functional element
US9679863B2 (en) * 2011-09-23 2017-06-13 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming interconnect substrate for FO-WLCSP
US8658464B2 (en) 2011-11-16 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Mold chase design for package-on-package applications
US9761553B2 (en) * 2012-10-19 2017-09-12 Taiwan Semiconductor Manufacturing Company Limited Inductor with conductive trace
JP6273362B2 (en) 2013-12-23 2018-01-31 インテル コーポレイション Package on package structure and method for manufacturing the same
US9362234B2 (en) * 2014-01-07 2016-06-07 Freescale Semiconductor, Inc. Shielded device packages having antennas and related fabrication methods
US9888577B2 (en) * 2014-03-28 2018-02-06 Intel Corporation Passive electrical devices with a polymer carrier
US10429509B2 (en) * 2014-12-24 2019-10-01 Stmicroelectronics Pte Ltd. Molded proximity sensor
US20170178990A1 (en) 2015-12-17 2017-06-22 Intel Corporation Through-mold structures

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110260334A1 (en) * 2007-07-17 2011-10-27 Hidenori Hasegawa Semiconductor device
US20130277821A1 (en) * 2012-04-19 2013-10-24 Sony Mobile Communications Ab Thermal package wth heat slug for die stacks
US20140035154A1 (en) * 2012-08-02 2014-02-06 Infineon Technologies Ag Chip package and a method for manufacturing a chip package
US20140225248A1 (en) * 2013-02-13 2014-08-14 Qualcomm Incorporated Power distribution and thermal solution for direct stacked integrated circuits
US20150348912A1 (en) * 2014-02-27 2015-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Metal Pad for Laser Marking

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10636716B2 (en) 2015-12-17 2020-04-28 Intel Corporation Through-mold structures

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US20180277458A1 (en) 2018-09-27
DE112016005820T5 (en) 2018-08-23
US20170178990A1 (en) 2017-06-22

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