WO2017092657A1 - Self-powered and chip module capable of spectrum detection and device thereof - Google Patents

Self-powered and chip module capable of spectrum detection and device thereof Download PDF

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Publication number
WO2017092657A1
WO2017092657A1 PCT/CN2016/107839 CN2016107839W WO2017092657A1 WO 2017092657 A1 WO2017092657 A1 WO 2017092657A1 CN 2016107839 W CN2016107839 W CN 2016107839W WO 2017092657 A1 WO2017092657 A1 WO 2017092657A1
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chip module
self
generating
spectrally
compound semiconductor
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PCT/CN2016/107839
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French (fr)
Chinese (zh)
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丁复光
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世亿盟科技(深圳)有限公司
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Publication of WO2017092657A1 publication Critical patent/WO2017092657A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/042Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Definitions

  • the invention belongs to the technical field of electronic device charging, and in particular relates to a self-generating and spectrally detectable chip module and a device thereof.
  • one of the objects of the present invention is to provide a self-generating and spectrally detectable chip module and a device thereof, so as to solve the problem that the current working time of the mobile electronic device cannot be sustained for a long time, and the charging device cannot be applied.
  • a self-generating and spectrally detectable chip module and a device thereof are provided.
  • the chip module is packaged by a single multi-component compound semiconductor chip, or is packaged by a plurality of multi-component compound semiconductor chips connected in series/parallel.
  • the self-generating and spectrally detectable chip module and device thereof further include a processor for calculating electrical energy and optical energy data generated by the multi-component compound semiconductor chip, the processor being packaged in Inside the chip module.
  • the processor is an 8- to 64-bit single-core or multi-core processor.
  • the self-generating and spectrally detectable chip module and device thereof further include a power management module for converting a chip module power supply into a required voltage, and the power management module is encapsulated in the chip module s.
  • the self-generating and spectrally detectable chip module and device thereof further include a lens assembly that collects light energy on the diversified compound semiconductor chip.
  • the lens assembly is composed of 1 to 5 optical lenses or lenses having single or multiple spherical or aspherical surfaces.
  • the chip module has a length of 0.5 to 35 mm and a width of 0.5 to 35 mm.
  • Another object of the present invention is to provide a mobile electronic device including a self-generating and spectrally detectable chip module, wherein the self-generating and spectrally detectable chip module is mounted in a mobile electronic device.
  • Department of PCBA board The self-generating and spectrally detectable chip module is mounted in a mobile electronic device.
  • Another object of the present invention is to provide a wearable device comprising: a self-generating and spectrally detectable chip module, wherein the self-generating and spectrally detectable chip module is mounted on a PCBA inside the wearable device On the board.
  • Another object of the present invention is to provide a spectrum detecting device comprising: a self-generating and spectrally detectable chip module, wherein the self-generating and spectrally detectable chip module is installed inside the spectrum detecting device PCBA board.
  • the power supply When receiving extra high-energy light energy, the power supply can be increased, and a new type of long-distance wireless charging mode can be provided. It also has a sustainable charging function, and is compact enough to be installed in various types of mobile electronic products. It is not limited by the size of the electronic product and the range of voltage requirements.
  • the power supply should also provide the detection spectrum. The function.
  • FIG. 1 is a schematic structural view of a chip module having self-generating and spectrally detectable according to the present invention
  • FIG. 2 is a schematic view of a semiconductor SMD package of the present invention
  • FIG. 3 is a schematic diagram of a COB package according to the present invention.
  • FIG. 4 is a schematic view showing the position of a multi-component compound semiconductor chip and a lens assembly of the present invention.
  • Figure 5 is a schematic illustration of the application of the invention to an electronic device.
  • a chip module with self-generating and spectral detection is provided.
  • the chip module 1 is packaged by a single multi-component compound semiconductor chip 2 or packaged by a plurality of multi-component compound semiconductor chips 2 in series. It can be formed by paralleling multiple multi-component compound semiconductor chips 2 and can be applied to different systems to provide 1 to 20V DC.
  • the electrodes of the single multi-component compound semiconductor chip described above are exposed to the outside of the package structure.
  • the above multi-component compound semiconductor chip may employ a gallium arsenide semiconductor chip, and specifically, a three-element or four-element material may be employed.
  • the multi-component compound semiconductor chip 2 utilizes the material properties of the multi-component compound semiconductor to cause the PN junction to generate a corresponding voltage and current when the multi-component semiconductor semiconductor contacts the light energy, and converts the light energy into electric energy to achieve the function of self-generation. Under stable light energy, a single multi-component compound semiconductor chip 2 can generate voltages higher than 1 V, and supply power to devices requiring different voltages by using a single or multiple series/parallel connection. For example, for micropower devices, only one or more parallel systems are needed to supply system power, while laptops require multiple systems to supply system power. In an alternative embodiment, the compound semiconductor is a tri-five compound.
  • the multi-component compound semiconductor chip 2 can be fabricated into various forms of packages in accordance with the needs of different mobile electronic products and in the form of packaging of integrated circuits.
  • the multi-component semiconductor is used in the existing IC packaging technology.
  • the chip 2 is packaged into a chip module, such as semiconductor SMD, BGA, COB, DIP, LGA, MCM, MFP, P-LCC, QFP, SIL, SOP, COG, and the chip module is sealed into a length of 0.5 to 35mm and 0.5 to 35mm wide module, the chip module of the invention is suitable for mobile power Sub-products have different space sizes and voltage requirements.
  • the package is implemented by a conventional SMD package, using aluminum 7 as a substrate, through the insulating layer 8, the aluminum foil 9, the solder paste 10, the lead frame 11, the PPA 12, and the transparent adhesive. 13.
  • the bonding wire 14 and the solid crystal glue 15 are packaged.
  • the package is encapsulated by COB, and the aluminum layer 7 is used as the substrate, and the insulating layer 8, the fluorescent glue 13, the bonding wire 14, the solid crystal glue 15, and the copper sheet are passed through. 16 and the protective glue 17 are packaged.
  • the chip module 1 further includes: a processor 3 for calculating electrical energy and optical energy data generated by the multi-component semiconductor chip.
  • a processor 3 for calculating electrical energy and optical energy data generated by the multi-component semiconductor chip.
  • the multi-component semiconductor chip 2 and the processor 3 are enclosed in the chip module 1 for the purpose of compressing the size of the product.
  • the multi-component compound semiconductor chip 2 integrates the processor 3 at design time.
  • the chip module 1 is calculated by the processor 3 from the electrical energy generated by the light energy of the multi-component semiconductor chip 2: the electric energy data, the electric energy data is mainly voltage and current, thereby calculating the power consumption; the light energy data, the light energy and The voltage generated by the multi-component compound semiconductor chip 2 is proportional, and the ratio of the electric energy generated by the multi-component compound semiconductor chip 2 in each spectrum is fixed, so that the light energy size data and the size data of each spectral light energy can be obtained. From the light energy data, the size data of each spectrum can be clearly analyzed, thereby performing spectrum detection, and accordingly, it can also be combined with the processing function of the processor 3 to form an ultraviolet monitoring function, such as being used on a wearable device. Display UV intensity data through a wearable device.
  • processor 3 is an 8- to 64-bit single or multi-core processor.
  • the size of the chip module 1 of the present invention is limited due to the limitation of the space size of most mobile electronic devices, because the multi-component compound semiconductor chip 2 is resistant. High temperature characteristics, so it is possible to add the lens assembly 4 above the multi-component compound semiconductor chip 2, Light energy is concentrated on the diversified compound semiconductor chip 2.
  • the lens assembly 4 is comprised of 1 to 5 optical lenses or lenses having a single or multiple spherical or aspheric surfaces, such that the chip module 1 of the present invention is At the same area size, the performance is increased by 2 to 1000 times.
  • the light energy is proportional to the electric energy generated by the multi-component compound semiconductor chip 2.
  • the stronger light energy can increase the output of the electric energy, so that the high-power LED or the LD direct chip module 1 can be used to increase the generation of electric energy. Therefore, a wireless charging mode is realized.
  • the light source 6 can be sunlight or other illuminating device.
  • the light passes through the lens assembly 4 or directly enters the chip module 1.
  • the PN junction of the multi-component compound semiconductor chip 2 generates voltage and current due to different brightness. It produces a different voltage and current than the light source.
  • the chip module 1 further includes: a power management module 5, a power management module for converting the power of the chip module into a required voltage, and a power management module 5 package In the chip module 1, the rectification stabilizes the power output.
  • the processor 3 collects voltage and current data generated by the multi-component compound semiconductor chip 2, and the signal output provides different parameters to the application system, such as:
  • Output electric energy W1 multiple compound semiconductor chip generates voltage V1 ⁇ multiple compound semiconductor chip current
  • Output power W2 output voltage ⁇ output current through power management function
  • the band range and chip size vary.
  • the chip module 1 is placed in the application system to supply power and at the same time, the system needs to provide the detection spectrum function, as the light sense and the spectrum sensing sensor, without adding additional filters, Reduce the cost and can be used to inductively detect light from 200 to 2200 nm.
  • the chip module 1 is adapted to different applications and packaged into a module attached to the PCBA.
  • the electronic device is protected by the outer casing 18, and its own power supply device is installed: battery 19.
  • the battery 19 is connected to the PCBA board 20.
  • the chip module 1 and the wireless module 21 are both mounted on the PCBA board 20, and the transparent cover 22 is disposed on the back of the housing 18 to facilitate the injection of the light source 6.
  • the electronic device is a mobile phone, a computer, a music player, a PC, a desktop computer, a mobile computer, a laptop computer, a notebook computer, a tablet computer, a server computer, a handheld computer, Handheld devices, PDA devices, handheld PDA devices, onboard devices, off-board devices, hybrid devices (eg, combining cellular phone functionality with PDA device functionality), consumer devices, in-vehicle devices, wearable devices, off-board devices, mobile Or portable device, non-mobile or non-portable device, cellular phone, PCS device, PDA device combined with wireless communication device, mobile or portable GPS device, DVB device, smaller computing device, non-desktop computer, "smaller size and higher performance (CSLL) device, ultra mobile device (UMD), ultra mobile PC (UMPC), mobile internet device (MID), "Origami” device or computing device, device supporting Dynamically Composable Computing (DCC), IoT devices or other devices.
  • the spectral detection function of the chip module can also be utilized to form

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)

Abstract

A self-powered and chip module (1) capable of spectrum detection and device thereof, the chip module (1) is fabricated by packaging a single multicomponent compound semiconductor chip (2), or by packaging multiple multicomponent compound semiconductor chips (2) in series or in parallel. Upon receiving additional high-energy light energy, a power supply thereof can be increased, and wireless charging and continuous charging can be realized simultaneously. This is suitable for various types of mobile electronic products, wearable products and IoT (Internet of Things) electronic devices, which bypasses the limitations of different spatial dimensions and different voltage requirement ranges in electronic products; the supplied power can be used to provide a function of spectrum detection according to system requirements.

Description

自发电且可光谱侦测的芯片模组及其设备Self-generating and spectrally detectable chip module and device thereof 技术领域Technical field
本发明属于电子设备充电技术领域,尤其涉及一种自发电且可光谱侦测的芯片模组及其设备。The invention belongs to the technical field of electronic device charging, and in particular relates to a self-generating and spectrally detectable chip module and a device thereof.
背景技术Background technique
目前的移动电子产品、穿戴式产品和物联网电子装置,都需要放入各式电池供应产品所需电能,因电池容量受其体积限制,其工作时间无法持续过久,所以一直无法满足消费者长时间的使用,同时也会产生许多不方便之处,尤其是移动通讯设备,常有可能在紧急状况时没电。为解决上述问题,市场上出现一些移动充电设备,如移动电源等,可事先充满电,在需要充电时,通过数据线将移动电源与电子设备连接即可为移动通讯设备充电。但是,同一个移动电源需配备不同的数据线才可以为不同型号的电子产品充电,操作麻烦,并且移动充电设备的储电量是有限的,无法持续充电。除此之外,消费者和行业用户已经对光谱侦测产品有着越来越多的需求,无论对人类肌肤有害的紫外线或是医疗所需的红外线的侦测,目前市面上的产品都过于庞大、耗电与昂贵,产品开发受限,导致市场发展不可观,无法满足消费者使用的需求。Current mobile electronic products, wearable products, and IoT electronic devices all require the power required to supply various types of battery supply products. Since the battery capacity is limited by its size, its working time cannot last for too long, so it has not been able to satisfy consumers. Long-term use, but also a lot of inconveniences, especially mobile communication devices, often have no power in an emergency. In order to solve the above problems, some mobile charging devices appear on the market, such as mobile power, etc., can be fully charged in advance, and when the charging is required, the mobile power source can be connected to the electronic device through the data line to charge the mobile communication device. However, the same mobile power supply needs to be equipped with different data lines to charge different types of electronic products, which is troublesome to operate, and the mobile charging device has limited storage capacity and cannot be continuously charged. In addition, consumers and industry users have more and more demand for spectrum detection products. No matter the ultraviolet rays harmful to human skin or the infrared rays required for medical treatment, the products on the market are too large. , power consumption and expensive, limited product development, resulting in unpredictable market development, unable to meet the needs of consumers.
发明内容Summary of the invention
有鉴于此,本发明其中一个目的是提供一种自发电且可光谱侦测的芯片模组及其设备,以解决目前解决移动电子产品装置的用电工作时间无法持续过久,充电装置无法应用于各种型号电子产品,从而无法满足消费者使用需求的技术 问题。In view of this, one of the objects of the present invention is to provide a self-generating and spectrally detectable chip module and a device thereof, so as to solve the problem that the current working time of the mobile electronic device cannot be sustained for a long time, and the charging device cannot be applied. Technology that can't meet consumer demand for various types of electronic products problem.
为了对披露的实施例的一些方面有一个基本的理解,下面给出了简单的概括。该概括部分不是泛泛评述,也不是要确定关键/重要组成元素或描绘这些实施例的保护范围。其唯一目的是用简单的形式呈现一些概念,以此作为后面的详细说明的序言。In order to have a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This generalization is not a general comment, nor is it intended to identify key/critical constituent elements or to describe the scope of protection of these embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the following detailed description.
本发明所采用的技术方案如下:The technical solutions adopted by the present invention are as follows:
提供一种自发电且可光谱侦测的芯片模组及其设备,芯片模组由单颗多元化合物半导体芯片封装而成,或,由多颗多元化合物半导体芯片串联/并联后封装而成。A self-generating and spectrally detectable chip module and a device thereof are provided. The chip module is packaged by a single multi-component compound semiconductor chip, or is packaged by a plurality of multi-component compound semiconductor chips connected in series/parallel.
进一步的,所述的自发电且可光谱侦测的芯片模组及其设备,还包括,用于演算所述多元化合物半导体芯片所产生的电能和光能数据的处理器,所述处理器封装于所述芯片模组内。Further, the self-generating and spectrally detectable chip module and device thereof further include a processor for calculating electrical energy and optical energy data generated by the multi-component compound semiconductor chip, the processor being packaged in Inside the chip module.
进一步的,所述处理器为8至64位单核或多核处理器。Further, the processor is an 8- to 64-bit single-core or multi-core processor.
进一步的,所述的自发电且可光谱侦测的芯片模组及其设备,还包括,将芯片模组电源转换成所需电压的电源管理模块,所述电源管理模块封装于所述芯片模组内。Further, the self-generating and spectrally detectable chip module and device thereof further include a power management module for converting a chip module power supply into a required voltage, and the power management module is encapsulated in the chip module s.
进一步的,所述的自发电且可光谱侦测的芯片模组及其设备,还包括,镜片组件,所述镜片组件将光能聚集于所述多元化化合物半导体芯片上。Further, the self-generating and spectrally detectable chip module and device thereof further include a lens assembly that collects light energy on the diversified compound semiconductor chip.
进一步的,所述镜片组件由1至5个光学镜片或透镜组成,所述光学镜片和所述透镜具有单个或多个球面或非球面。Further, the lens assembly is composed of 1 to 5 optical lenses or lenses having single or multiple spherical or aspherical surfaces.
进一步的,所述芯片模组的长为0.5至35mm,宽为0.5至35mm。Further, the chip module has a length of 0.5 to 35 mm and a width of 0.5 to 35 mm.
本发明另一个目的是提供一种移动电子设备,包括,自发电且可光谱侦测的芯片模组,所述具有自发电且可光谱侦测的芯片模组安装于移动电子设备内 部的PCBA板上。Another object of the present invention is to provide a mobile electronic device including a self-generating and spectrally detectable chip module, wherein the self-generating and spectrally detectable chip module is mounted in a mobile electronic device. Department of PCBA board.
本发明另一个目的是提供一种可穿戴设备,包括,具有自发电且可光谱侦测的芯片模组,所述具有自发电且可光谱侦测的芯片模组安装于可穿戴设备内部的PCBA板上。Another object of the present invention is to provide a wearable device comprising: a self-generating and spectrally detectable chip module, wherein the self-generating and spectrally detectable chip module is mounted on a PCBA inside the wearable device On the board.
本发明另一个目的是提供一种光谱侦测设备,包括,具有自发电且可光谱侦测的芯片模组,所述具有自发电且可光谱侦测的芯片模组安装于光谱侦测设备内部的PCBA板上。Another object of the present invention is to provide a spectrum detecting device comprising: a self-generating and spectrally detectable chip module, wherein the self-generating and spectrally detectable chip module is installed inside the spectrum detecting device PCBA board.
有益效果:当接收额外高能量光能照射时,可以加大电能供应,便可以提供一种新型远距离无线充电方式。且亦能具有可持续充电功能,并且体积小巧适用于安装在各种类型的移动电子产品中,不受电子产品空间大小以及电压需求范围的限制;供应电能同时应系统需要亦可提供侦测光谱的功能。Beneficial effect: When receiving extra high-energy light energy, the power supply can be increased, and a new type of long-distance wireless charging mode can be provided. It also has a sustainable charging function, and is compact enough to be installed in various types of mobile electronic products. It is not limited by the size of the electronic product and the range of voltage requirements. The power supply should also provide the detection spectrum. The function.
附图说明DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the description of the prior art will be briefly described below. Obviously, the drawings in the following description are only It is a certain embodiment of the present invention, and other drawings can be obtained from those skilled in the art without any creative work.
图1是本发明具有自发电且可光谱侦测的芯片模组的结构示意图;1 is a schematic structural view of a chip module having self-generating and spectrally detectable according to the present invention;
图2是本发明采用半导体SMD封装示意图;2 is a schematic view of a semiconductor SMD package of the present invention;
图3是本发明采用COB封装示意图;3 is a schematic diagram of a COB package according to the present invention;
图4是本发明多元化合物半导体芯片与镜片组件的位置示意图。4 is a schematic view showing the position of a multi-component compound semiconductor chip and a lens assembly of the present invention.
图5是本发明应用于电子设备的示意图。 Figure 5 is a schematic illustration of the application of the invention to an electronic device.
具体实施方式detailed description
下面将结合本发明的附图,对本发明的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions of the present invention are clearly and completely described in the following with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the invention, but not all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
如图1所示,提供一种具有自发电且可光谱侦测的芯片模组,芯片模组1由单颗多元化合物半导体芯片2封装而成,或者由多颗多元化合物半导体芯片2串联后封装而成,或者由多颗多元化合物半导体芯片2并联后封装而成,可应用于不同系统,提供1至20V的直流电。上述所述单颗多元化合物半导体芯片的电极暴露于封装结构的外部。上述多元化合物半导体芯片可采用砷化镓半导体芯片,具体可采用三元素或四元素材料。As shown in FIG. 1 , a chip module with self-generating and spectral detection is provided. The chip module 1 is packaged by a single multi-component compound semiconductor chip 2 or packaged by a plurality of multi-component compound semiconductor chips 2 in series. It can be formed by paralleling multiple multi-component compound semiconductor chips 2 and can be applied to different systems to provide 1 to 20V DC. The electrodes of the single multi-component compound semiconductor chip described above are exposed to the outside of the package structure. The above multi-component compound semiconductor chip may employ a gallium arsenide semiconductor chip, and specifically, a three-element or four-element material may be employed.
多元化合物半导体芯片2,利用多元化合物半导体的材料特性,使得多元化合物半导体接触光能时PN结产生对应的电压和电流,将光能转换成电能,而达到自发电的功能。在稳定的光能下,单颗多元化合物半导体芯片2可以产生高于1V以上的电压,利用单颗,或,多颗串联/并联的方式,给需要不同电压的设备供电。例如,对于微功耗设备,只需单颗或多颗并联的方式供应系统电能,笔记本电脑则需要多颗串联的方式供应系统电能。在一种可选的实施例中,化合物半导体为三五族化合物。The multi-component compound semiconductor chip 2 utilizes the material properties of the multi-component compound semiconductor to cause the PN junction to generate a corresponding voltage and current when the multi-component semiconductor semiconductor contacts the light energy, and converts the light energy into electric energy to achieve the function of self-generation. Under stable light energy, a single multi-component compound semiconductor chip 2 can generate voltages higher than 1 V, and supply power to devices requiring different voltages by using a single or multiple series/parallel connection. For example, for micropower devices, only one or more parallel systems are needed to supply system power, while laptops require multiple systems to supply system power. In an alternative embodiment, the compound semiconductor is a tri-five compound.
多元化合物半导体芯片2可以应不同移动电子产品的需要,同集成电路的封装方式,制造成各种不同形式的封装,在一种可选的实施例中,使用现有IC封装技术将多元化合物半导体芯片2封装成芯片模组,封装方式如:半导体SMD、BGA、COB、DIP、LGA、MCM、MFP、P-LCC、QFP、SIL、SOP、COG,芯片模组1封状成一个长0.5至35mm与宽0.5至35mm的模组,本发明芯片模组适用移动电 子产品不同的空间大小和电压需求。The multi-component compound semiconductor chip 2 can be fabricated into various forms of packages in accordance with the needs of different mobile electronic products and in the form of packaging of integrated circuits. In an alternative embodiment, the multi-component semiconductor is used in the existing IC packaging technology. The chip 2 is packaged into a chip module, such as semiconductor SMD, BGA, COB, DIP, LGA, MCM, MFP, P-LCC, QFP, SIL, SOP, COG, and the chip module is sealed into a length of 0.5 to 35mm and 0.5 to 35mm wide module, the chip module of the invention is suitable for mobile power Sub-products have different space sizes and voltage requirements.
在一种可选的实施例中,如图2所示,采用传统SMD封装方式进行封装,以铝7为基底,通过绝缘层8、铝箔9、焊锡膏10、引线架11、PPA12、透明胶13、键合线14和固晶胶15进行封装。In an optional embodiment, as shown in FIG. 2, the package is implemented by a conventional SMD package, using aluminum 7 as a substrate, through the insulating layer 8, the aluminum foil 9, the solder paste 10, the lead frame 11, the PPA 12, and the transparent adhesive. 13. The bonding wire 14 and the solid crystal glue 15 are packaged.
在一种可选的实施例中,如图3所示,采用COB封装方式进行封装,以铝7为基底,通过绝缘层8、荧光胶13、键合线14、固晶胶15、铜片16和保护胶17进行封装。In an optional embodiment, as shown in FIG. 3, the package is encapsulated by COB, and the aluminum layer 7 is used as the substrate, and the insulating layer 8, the fluorescent glue 13, the bonding wire 14, the solid crystal glue 15, and the copper sheet are passed through. 16 and the protective glue 17 are packaged.
在一种可选的实施例中,芯片模组1还包括:处理器3,用于演算多元化合物半导体芯片所产生的电能和光能数据。因目前移动设备的发展趋势为需要高度集成芯片模组,以压缩产品大小尺寸为目的,采用封装技术将多元化合物半导体芯片2和处理器3封入芯片模组1。在一种可选的实施例中,多元化合物半导体芯片2在设计时整合处理器3。In an optional embodiment, the chip module 1 further includes: a processor 3 for calculating electrical energy and optical energy data generated by the multi-component semiconductor chip. As the current development trend of mobile devices requires a highly integrated chip module, the multi-component semiconductor chip 2 and the processor 3 are enclosed in the chip module 1 for the purpose of compressing the size of the product. In an alternative embodiment, the multi-component compound semiconductor chip 2 integrates the processor 3 at design time.
如此,芯片模组1通过处理器3从多元化合物半导体芯片2因光能产生的电能演算出:电能数据,电能数据主要为电压和电流,由此计算出功耗;光能数据,光能与多元化合物半导体芯片2产生的电压为正比,多元化合物半导体芯片2在每个光谱下产生的电能比例固定,因此可以获得光能大小数据以及每个光谱光能的大小数据。从光能数据中,可以清楚分析出每个光谱的大小数据,由此做到光谱侦测,据此亦可与处理器3处理功能结合形成紫外线监测功能,如使用在可穿戴设备上,可通过可穿戴设备显示紫外线强度数据。In this way, the chip module 1 is calculated by the processor 3 from the electrical energy generated by the light energy of the multi-component semiconductor chip 2: the electric energy data, the electric energy data is mainly voltage and current, thereby calculating the power consumption; the light energy data, the light energy and The voltage generated by the multi-component compound semiconductor chip 2 is proportional, and the ratio of the electric energy generated by the multi-component compound semiconductor chip 2 in each spectrum is fixed, so that the light energy size data and the size data of each spectral light energy can be obtained. From the light energy data, the size data of each spectrum can be clearly analyzed, thereby performing spectrum detection, and accordingly, it can also be combined with the processing function of the processor 3 to form an ultraviolet monitoring function, such as being used on a wearable device. Display UV intensity data through a wearable device.
在一种可选的实施例中,处理器3为8至64位单或多核处理器。In an alternate embodiment, processor 3 is an 8- to 64-bit single or multi-core processor.
在一种可选的实施例中,如图4所示,由于多数移动电子设备在空间大小上的限制,本发明的芯片模组1的尺寸也会受限,因多元化合物半导体芯片2有耐高温的特性,所以可以在多元化合物半导体芯片2上方加装镜片组件4,用 于将光能聚集于所述多元化化合物半导体芯片2上。In an optional embodiment, as shown in FIG. 4, the size of the chip module 1 of the present invention is limited due to the limitation of the space size of most mobile electronic devices, because the multi-component compound semiconductor chip 2 is resistant. High temperature characteristics, so it is possible to add the lens assembly 4 above the multi-component compound semiconductor chip 2, Light energy is concentrated on the diversified compound semiconductor chip 2.
在一种可选的实施例中,镜片组件4由1至5个光学镜片或透镜组成,所述光学镜片和所述透镜具有单个或多个球面或非球面,使本发明芯片模组1在同一面积大小时,效能提高2至1000倍。In an alternative embodiment, the lens assembly 4 is comprised of 1 to 5 optical lenses or lenses having a single or multiple spherical or aspheric surfaces, such that the chip module 1 of the present invention is At the same area size, the performance is increased by 2 to 1000 times.
光能与多元化合物半导体芯片2产生的电能为正比,更强的光能可以加大电能的输出,因此可以使用高功率LED或LD直射芯片模组1,增加电能的产生。从而实现一种无线充电方式,光源6可为太阳光或是其他发光设备,光线经过镜片组件4或者直接进到芯片模组1,多元化合物半导体芯片2的PN结产生电压和电流,因不同亮度和光源产生电压和电流不同。The light energy is proportional to the electric energy generated by the multi-component compound semiconductor chip 2. The stronger light energy can increase the output of the electric energy, so that the high-power LED or the LD direct chip module 1 can be used to increase the generation of electric energy. Therefore, a wireless charging mode is realized. The light source 6 can be sunlight or other illuminating device. The light passes through the lens assembly 4 or directly enters the chip module 1. The PN junction of the multi-component compound semiconductor chip 2 generates voltage and current due to different brightness. It produces a different voltage and current than the light source.
应不同系统的需求,在一种可选的实施例中,芯片模组1还包括:电源管理模块5,用于将芯片模组电源转换成所需电压的电源管理模块,电源管理模块5封装于芯片模组1内,整流稳定电能输出。In an optional embodiment, the chip module 1 further includes: a power management module 5, a power management module for converting the power of the chip module into a required voltage, and a power management module 5 package In the chip module 1, the rectification stabilizes the power output.
在一种可选的实施例中,处理器3收集多元化合物半导体芯片2产生的电压和电流数据,信号输出提供不同参数给应用系统,如:In an alternative embodiment, the processor 3 collects voltage and current data generated by the multi-component compound semiconductor chip 2, and the signal output provides different parameters to the application system, such as:
电能效率:Electrical efficiency:
产出电能W1=多元化合物半导体芯片产生电压V1×多元化合物半导体芯片电流;Output electric energy W1=multiple compound semiconductor chip generates voltage V1×multiple compound semiconductor chip current;
经电源管理功能输出电能W2=输出电压×输出电流;Output power W2 = output voltage × output current through power management function;
因此效率=W2/W1。Therefore efficiency = W2/W1.
光能侦测:多元化合物半导体芯片产生的电压和亮度同比,因此,光源亮度L1=常数C1×V1,其中,常数会因光学透镜和芯片大小不同而变化。Light energy detection: The voltage and brightness generated by the multi-component compound semiconductor chip are year-on-year. Therefore, the light source brightness L1 = constant C1 × V1, wherein the constant varies depending on the optical lens and the chip size.
光谱侦测:多元化合物半导体芯片产出电能与所需侦测光谱波段同比,因此,所需侦测光谱波段f1=常数C2×W1,其中,常数会因光学透镜、所需侦测 波段范围和芯片大小不同而变化。Spectral detection: The multi-component semiconductor chip produces electricity and the required spectrum of the spectrum. Therefore, the required spectral band f1=constant C2×W1, where the constant will be due to the optical lens and the required detection. The band range and chip size vary.
在一种可选的实施例中,芯片模组1放入应用系统中,供应电能并同时应系统需要提供侦测光谱功能,作为光感以及光谱感应传感器,无需增加额外的过滤镜,大大降低成本,可以用于感应侦测200至2200nm波长的光。In an optional embodiment, the chip module 1 is placed in the application system to supply power and at the same time, the system needs to provide the detection spectrum function, as the light sense and the spectrum sensing sensor, without adding additional filters, Reduce the cost and can be used to inductively detect light from 200 to 2200 nm.
在一种可选的实施例中,芯片模组1适应不同的应用,封装成贴在PCBA上的模组,如图5所示,电子设备由外壳18保护,内部安装自身的供电装置:电池19,电池19与PCBA板20连接。芯片模组1和无线模组21均安装在PCBA板20上,外壳18的背面设置透明盖板22,便于光源6射入。在一种可选的实施例中,电子设备为手机、电脑、音乐播放器、PC、台式计算机、移动计算机、膝上型计算机、笔记本计算机、平板计算机(tablet computer)、服务器计算机、手持计算机、手持装置、PDA装置、手持PDA装置、板载装置、板外装置、混合装置(例如将蜂窝电话功能性与PDA装置功能性组合)、消费装置、车载装置、可穿戴装置、非车载装置、移动或便携式装置、非移动或非便携式装置、蜂窝电话、PCS装置、结合无线通信装置的PDA装置、移动或便携式GPS装置、DVB装置、较小计算装置、非台式计算机、“尺寸更小性能更高”(CSLL)装置、超移动装置(UMD)、超移动PC(UMPC)、移动因特网装置(MID)、“Origami”装置或计算装置、支持可动态组成计(Dynamically Composable Computing,DCC)的装置、物联网设备或其它设备。亦可以将所述芯片模组的光谱侦测功能利用形成光谱侦测设备。In an optional embodiment, the chip module 1 is adapted to different applications and packaged into a module attached to the PCBA. As shown in FIG. 5, the electronic device is protected by the outer casing 18, and its own power supply device is installed: battery 19. The battery 19 is connected to the PCBA board 20. The chip module 1 and the wireless module 21 are both mounted on the PCBA board 20, and the transparent cover 22 is disposed on the back of the housing 18 to facilitate the injection of the light source 6. In an optional embodiment, the electronic device is a mobile phone, a computer, a music player, a PC, a desktop computer, a mobile computer, a laptop computer, a notebook computer, a tablet computer, a server computer, a handheld computer, Handheld devices, PDA devices, handheld PDA devices, onboard devices, off-board devices, hybrid devices (eg, combining cellular phone functionality with PDA device functionality), consumer devices, in-vehicle devices, wearable devices, off-board devices, mobile Or portable device, non-mobile or non-portable device, cellular phone, PCS device, PDA device combined with wireless communication device, mobile or portable GPS device, DVB device, smaller computing device, non-desktop computer, "smaller size and higher performance (CSLL) device, ultra mobile device (UMD), ultra mobile PC (UMPC), mobile internet device (MID), "Origami" device or computing device, device supporting Dynamically Composable Computing (DCC), IoT devices or other devices. The spectral detection function of the chip module can also be utilized to form a spectrum detecting device.
本领域技术人员还应当理解,结合本文的实施例描述的各种说明性的逻辑框、模块、电路和算法步骤均可以实现成电子硬件、计算机软件或其组合。为了清楚地说明硬件和软件之间的可交换性,上面对各种说明性的部件、框、模块、电路和步骤均围绕其功能进行了一般地描述。至于这种功能是实现成硬件 还是实现成软件,取决于特定的应用和对整个系统所施加的设计约束条件。熟练的技术人员可以针对每个特定应用,以变通的方式实现所描述的功能,但是,这种实现决策不应解释为背离本公开的保护范围。 Various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the embodiments herein can be implemented as electronic hardware, computer software, or combinations thereof. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps are generally described in terms of their functionality. As for this function is implemented as hardware It is still implemented as software, depending on the particular application and the design constraints imposed on the overall system. Skilled artisans are capable of <Desc/Clms Page number> number> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

Claims (10)

  1. 自发电且可光谱侦测的芯片模组,其特征在于,芯片模组由单颗多元化合物半导体芯片封装而成,或,由多颗多元化合物半导体芯片串联/并联后封装而成;所述单颗多元化合物半导体芯片的电极暴露于封装结构的外部。The self-generating and spectrally detectable chip module is characterized in that the chip module is packaged by a single multi-component compound semiconductor chip, or is formed by serially/parallel-packaging a plurality of multi-component compound semiconductor chips; The electrodes of the multi-component compound semiconductor chip are exposed to the outside of the package structure.
  2. 根据权利要求1所述的自发电且可光谱侦测的芯片模组,其特征在于,还包括,用于演算所述多元化合物半导体芯片所产生的电能和光能数据的处理器,所述处理器封装于所述芯片模组内。The self-generating and spectrally detectable chip module of claim 1 , further comprising: a processor for calculating electrical energy and optical energy data generated by the multi-component compound semiconductor chip, the processor Packaged in the chip module.
  3. 根据权利要求1所述的自发电且可光谱侦测的芯片模组,其特征在于,所述处理器为8至64位单核或多核处理器。The self-generating and spectrally detectable chip module of claim 1 , wherein the processor is an 8- to 64-bit single-core or multi-core processor.
  4. 根据权利要求1所述的自发电且可光谱侦测的芯片模组,其特征在于,还包括,将芯片模组电源转换成所需电压的电源管理模块,所述电源管理模块封装于所述芯片模组内。The self-generating and spectrally detectable chip module of claim 1 , further comprising: a power management module for converting the chip module power into a required voltage, wherein the power management module is packaged in the Inside the chip module.
  5. 根据权利要求1所述的自发电且可光谱侦测的芯片模组,其特征在于,还包括,镜片组件,所述镜片组件将光能聚集于所述多元化化合物半导体芯片上。The self-generating and spectrally detectable chip module of claim 1 further comprising a lens assembly that concentrates light energy on the plurality of compound semiconductor chips.
  6. 根据权利要求5所述的自发电且可光谱侦测的芯片模组,其特征在于,所述镜片组件由1至5个光学镜片或透镜组成,所述光学镜片和所述透镜具有单个或多个球面或非球面。The self-generating and spectrally detectable chip module according to claim 5, wherein the lens assembly is composed of 1 to 5 optical lenses or lenses, and the optical lens and the lens have single or multiple Spherical or aspherical.
  7. 根据权利要求1-6任一项所述的自发电且可光谱侦测的芯片模组,其特征在于,所述芯片模组的长为0.5至35mm,宽为0.5至35mm。The self-generating and spectrally detectable chip module according to any one of claims 1 to 6, wherein the chip module has a length of 0.5 to 35 mm and a width of 0.5 to 35 mm.
  8. 使用权利要求1-7任一所述的自发电且可光谱侦测的芯片模组的设备,其特征在于,包括,自发电且可光谱侦测的芯片模组,所述自发电且可光谱侦测的芯片模组安装于移动电子设备内部的PCBA板上。 Apparatus for using a self-generating and spectrally detectable chip module according to any of claims 1-7, comprising: a self-generating and spectrally detectable chip module, said self-generated and spectrally The detected chip module is mounted on a PCBA board inside the mobile electronic device.
  9. 使用权利要求1-7任一所述的自发电且可光谱侦测的芯片模组的设备,其特征在于,包括,自发电且可光谱侦测的芯片模组,所述自发电且可光谱侦测的芯片模组安装于可穿戴设备内部的PCBA板上。Apparatus for using a self-generating and spectrally detectable chip module according to any of claims 1-7, comprising: a self-generating and spectrally detectable chip module, said self-generated and spectrally The detected chip module is mounted on a PCBA board inside the wearable device.
  10. 使用权利要求1-7任一所述的自发电且可光谱侦测的芯片模组的设备,其特征在于,包括,自发电且可光谱侦测的芯片模组,所述自发电且可光谱侦测的芯片模组安装于光谱侦测设备内部的PCBA板上。 Apparatus for using a self-generating and spectrally detectable chip module according to any of claims 1-7, comprising: a self-generating and spectrally detectable chip module, said self-generated and spectrally The detected chip module is mounted on a PCBA board inside the spectrum detecting device.
PCT/CN2016/107839 2015-12-01 2016-11-30 Self-powered and chip module capable of spectrum detection and device thereof WO2017092657A1 (en)

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