WO2017063293A1 - 一种过渡金属硫化物可饱和吸收镜及锁模光纤激光器 - Google Patents

一种过渡金属硫化物可饱和吸收镜及锁模光纤激光器 Download PDF

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WO2017063293A1
WO2017063293A1 PCT/CN2015/099374 CN2015099374W WO2017063293A1 WO 2017063293 A1 WO2017063293 A1 WO 2017063293A1 CN 2015099374 W CN2015099374 W CN 2015099374W WO 2017063293 A1 WO2017063293 A1 WO 2017063293A1
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transition metal
metal sulfide
laser
fiber
saturable absorption
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闫培光
陈浩
邢凤飞
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Shenzhen University
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Shenzhen University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers

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  • the invention relates to the field of laser technology, in particular to a transition metal sulfide saturable absorption mirror and a mode-locked fiber laser.
  • passive mode-locking technology is an effective way to achieve ultra-fast pulse output of fiber lasers, and the key technology of passive mode-locking is the need for saturable absorption in fiber laser resonators.
  • researchers have used a variety of saturable absorption effects to obtain passive mode-locked ultrafast pulse outputs in fiber lasers.
  • SESAM semiconductor saturable absorption mirrors
  • the technical problem to be solved by the present invention is to provide a transition metal sulfide saturable absorption mirror and a mode-locked fiber laser to solve the defects that the commercial SESAM used in the prior art is expensive, complicated in manufacturing process, and low in reliability.
  • the present invention is implemented as follows:
  • a transition metal sulfide saturable absorption mirror comprising an optical fiber, a transition metal sulfide film plated on the end face of the fiber, and a highly reflective film plated on the transition metal sulfide film.
  • the highly reflective film is a gold film.
  • the material of the transition metal sulfide film is any one of tungsten sulfide, molybdenum sulfide, tungsten selenide and molybdenum selenide.
  • a method for preparing a transition metal sulfide saturable absorption mirror comprises the following steps:
  • Step A cutting the optical fiber to form an end face of the optical fiber
  • Step B placing the cut optical fiber and the transition metal sulfide target in a vacuum chamber
  • Step C ionizing a surface of the transition metal sulfide target to generate a transition metal sulfide plasma, and depositing the transition metal sulfide plasma on the end face of the fiber to form a transition metal sulfide film;
  • Step D controlling the deposition time and/or the deposition temperature so that the transition metal sulfide film reaches a set thickness
  • Step E plating a highly reflective film on the transition metal sulfide film.
  • the material of the transition metal sulfide film is any one of tungsten sulfide, molybdenum sulfide, tungsten selenide and molybdenum selenide.
  • pulse laser deposition is employed in the step C.
  • a mode-locked fiber laser includes: a semiconductor pump laser, an optical coupling component, and a resonant cavity; the resonant cavity includes an active optical fiber, any transition metal sulfide saturable absorption mirror as described above, and an optical coupler;
  • Pump light generated by the semiconductor pump laser is coupled into the resonant cavity via the optical coupling component and provides gain to the active fiber to cause laser light generation;
  • the transition metal sulfide saturable absorption mirror is used to mold the laser
  • the optical coupler is used to output a laser after mode locking.
  • the resonant cavity further includes an optical circulator; the optical circulator includes a first end, a second end, and a third end;
  • the laser enters the optical circulator through the first end, and enters the transition metal sulfide saturable absorption mirror through the second end, and is modulated by the transition metal sulfide saturable absorption mirror after mode locking Reflected back to the optical circulator and output by the third end.
  • the resonant cavity further includes:
  • An optical isolator for unidirectionally transmitting the laser
  • a polarization controller for controlling the polarization state of the laser.
  • a mode-locked fiber laser includes: a semiconductor pump laser, an optical coupling component, and a resonant cavity; the resonant cavity includes an active optical fiber, any transition metal sulfide saturable absorption mirror as described above, and a dichroic mirror;
  • Pump light generated by the semiconductor pump laser is coupled into the resonant cavity via the optical coupling component and provides gain to the active fiber to cause laser light generation;
  • the transition metal sulfide saturable absorption mirror is used to mold the laser
  • the dichroic mirror has high permeability to the pump light and is highly reflective to the laser light;
  • the pump light enters the active fiber through the dichroic mirror; the mode-locked laser light is output through the dichroic mirror.
  • the novel transition metal sulfide saturable absorption mirror has a high damage threshold, is simple in structure, low in cost, high in reliability, and is suitable for mass production, and at the same time, the transition metal sulfide can be saturated and absorbed.
  • the mirror-mode-locked fiber laser has the advantages of full fiber, high reliability and suitable for the conversion of results.
  • FIG. 1 is a schematic structural view of a transition metal sulfide saturable absorption mirror provided by an embodiment of the present invention
  • FIG. 2 is a schematic flow chart of a preparation method of a transition metal sulfide saturable absorption mirror provided by an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a mode-locked fiber laser according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of a resonant cavity of another mode-locked fiber laser according to an embodiment of the present invention.
  • the present invention first provides a transition metal sulfide saturable absorption mirror 1.
  • the saturable absorption mirror 1 includes an optical fiber, a transition metal sulfide film 101 plated on the end face of the fiber, and a high reflection film 102 plated on the transition metal sulfide film 101.
  • the high reflection film 102 can employ a gold film having an extremely high reflectance.
  • the optical fiber may be a single mode fiber or an active fiber doped with a rare earth.
  • the material of the transition metal sulfide film 101 may be any one of tungsten sulfide, molybdenum sulfide, tungsten selenide, and molybdenum selenide.
  • the highly reflective film 102 is equivalent to a high reflection mirror.
  • This transition metal sulfide saturable absorption mirror 1 operates on the principle of providing a modulated high mirror as one of the lasers.
  • the laser light in the cavity is reflected by the transition metal sulfide saturable absorption mirror 1
  • the laser light can be modulated by the transition metal sulfide saturable absorption mirror 1 to achieve mode locking.
  • the transition metal sulfide saturable absorption mirror 1 has a high damage threshold and can be used as a light mirror for broadband modulation of light, and can be used as a key device for pulse laser generation in a laser system.
  • the present invention also provides a method for preparing a transition metal sulfide saturable absorption mirror 1, which comprises the following steps:
  • Step A Cutting the optical fiber to form an end face of the optical fiber. It can be cut by fiber cutter, and care should be taken to ensure that the end face of the fiber is flat.
  • Step B The cut fiber and the transition metal sulfide target are placed in a vacuum chamber.
  • Step C The surface of the transition metal sulfide target is ionized to generate a transition metal sulfide plasma, and a transition metal sulfide plasma is deposited on the end face of the fiber to form a transition metal sulfide film 101.
  • Step D controlling the deposition time and/or the deposition temperature so that the transition metal sulfide film 101 reaches a set thickness.
  • Step E A highly reflective film 102 is plated on the transition metal sulfide film 101.
  • the high reflection film 102 is plated, the same method as the metal sulfide film can be used.
  • the optical fiber may be a common single mode fiber or a rare earth doped active fiber.
  • the material of the transition metal sulfide film 101 may be any one of tungsten sulfide, molybdenum sulfide, and antimony selenide.
  • the surface of the transition metal sulfide target can be ionized by pulse laser deposition to form a plasma, and the plasma is deposited on the end face of the fiber to form a transition metal sulfide film 101.
  • the thickness of the deposited transition metal sulfide film 101 can be controlled by controlling parameters such as deposition time or deposition temperature, and deposition can be stopped when the thickness of the deposited transition metal sulfide film 101 reaches a desired thickness.
  • the conventional semiconductor saturable absorption mirror 1 is prepared by chemical vapor deposition.
  • the semiconductor material needs to be layered, and each layer needs precise control.
  • the prepared semiconductor saturable absorption mirror 1 has a bandwidth of only several tens of nanometers.
  • the method of the invention utilizes the pulse laser deposition method, the preparation process is simple, and can be mass-produced, and a transition metal sulfide target can prepare thousands of transition metal sulfide saturable absorption mirrors 1 .
  • the thickness and uniformity of the deposited transition metal sulfide film 101 can be controlled by controlling the temperature, time, and the like of the deposition, thereby enabling mass production and production of a transition metal sulfide saturable absorption mirror 1
  • the specifications are the same, and the prepared transition metal sulfide saturable absorption mirror 1 bandwidth can be extended from visible light to infrared light.
  • the present invention provides a mode locked fiber laser.
  • the mode-locked fiber laser includes a semiconductor pump laser 2, an optical coupling component 3, and a resonant cavity.
  • the resonant cavity comprises an active optical fiber 4, any of the transition metal sulfide saturable absorption mirrors 1 above, and an optical coupler 6.
  • the optical coupling assembly 3 can employ a wavelength division multiplexer.
  • the principle of the mode-locked fiber laser is that the pump light generated by the semiconductor pump laser 2 is coupled into the cavity via the optical coupling assembly 3 and provides gain to the active fiber 4 to generate a laser.
  • the transition metal sulfide saturable absorption mirror 1 molds the laser. Specifically, the saturable absorption mirror 1 can provide a saturable absorption modulation to the resonant cavity through the transition metal sulfide film 101, thereby realizing mold clamping of the laser.
  • the optical coupler 6 outputs the laser after the mode locking.
  • the resonant cavity of the mode-locked fiber laser is an annular cavity structure.
  • the cavity also includes an optical circulator 7, an optical isolator 5, and a polarization controller 8.
  • the optical circulator 7 includes a first end, a second end, and a third end.
  • the laser enters the optical circulator 7 through the first end, and enters the transition metal sulfide saturable absorption mirror 1 through the second end, and is modulated by the transition metal sulfide saturable absorption mirror 1 to be reflected back to the optical circulator 7 and then The third end outputs.
  • the optical isolator 5 transmits the laser in one direction, and the polarization controller 8 controls the polarization state of the laser.
  • the invention also provides another mode-locked fiber laser, comprising: a semiconductor pump laser 2, an optical coupling component 3, and a resonant cavity.
  • Figure 4 shows the resonant cavity of the mode-locked fiber laser, which is a linear cavity structure, including an active fiber 4, any of the transition metal sulfide saturable absorption mirrors 1, and a dichroic mirror 9 as described above.
  • the active optical fiber 4 is integrated with the optical fiber on the transition metal sulfide saturable absorption mirror 1.
  • the optical fiber on the metal sulfide saturable absorption mirror 1 can also directly use an active optical fiber as the active optical fiber 4.
  • the principle of the mode-locked fiber laser is that the pump light generated by the semiconductor pump laser 2 is coupled into the cavity via the optical coupling assembly 3 and provides gain to the active fiber 4 to generate a laser.
  • the laser oscillates back and forth within the cavity.
  • the transition metal sulfide saturable absorption mirror 1 molds the laser. Specifically, the saturable absorption mirror 1 can provide a saturable absorption modulation to the resonant cavity through the transition metal sulfide film 101, thereby realizing mold clamping of the laser.
  • the highly reflective film 102 functions as a mirror of high reflectivity and provides protection to the film to some extent.
  • the dichroic mirror 9 has high permeability to the pump light and is highly reflective to the laser light. The pump light enters the active optical fiber 4 through the dichroic mirror 9, and the mode-locked laser light is output through the dichroic mirror 9.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)

Abstract

一种过渡金属硫化物可饱和吸收镜(1)及锁模光纤激光器,过渡金属硫化物可饱和吸收镜包括:光纤、镀在光纤端面的过渡金属硫化物薄膜(101)、镀在过渡金属硫化物薄膜上的高反射膜(102)。过渡金属硫化物可饱和吸收镜具有高损伤阈值,结构简单,成本低廉,可靠性高,适于批量生产的优点,同时,采用过渡金属硫化物可饱和吸收镜的锁模光纤激光器具有全光纤化、高可靠性和适于成果转化的优点。

Description

一种过渡金属硫化物可饱和吸收镜及锁模光纤激光器 技术领域
本发明涉及激光技术领域,尤其涉及一种过渡金属硫化物可饱和吸收镜及锁模光纤激光器。
背景技术
利用被动锁模技术是光纤激光器实现超快脉冲输出的一种有效途径,而被动锁模的关键技术是光纤激光器谐振腔中需要具备可饱和吸收效应。目前,研究人员已经利用多种可饱和吸收效应在光纤激光器中获得被动锁模超快脉冲输出。一般来说,为了克服光纤激光锁模环境不稳定的缺点,研究人员通常采用半导体可饱和吸收镜(SESAM)来实现光纤激光器锁模超快脉冲输出。然而,由于商用SESAM价格昂贵、制作工艺复杂、可饱和吸收带宽窄、一般仅支持皮秒级别的脉冲输出,并且损伤阈值也较低,所以也不适用于全方位研究超快光纤激光器的动力学特性。因此,研制出成本低廉、工艺简单、高性能的可饱和吸收体一直是超快激光物理领域追求的目标。
技术问题
本发明所要解决的技术问题是,提供一种过渡金属硫化物可饱和吸收镜及锁模光纤激光器,以解决现有技术中所采用的商用SESAM价格昂贵、制作工艺复杂、可靠性低的缺陷。
技术解决方案
本发明是这样实现的:
一种过渡金属硫化物可饱和吸收镜,包括光纤、镀在所述光纤端面的过渡金属硫化物薄膜、镀在所述过渡金属硫化物薄膜上的高反射膜。
进一步地,所述高反射膜为金膜。
进一步地,所述过渡金属硫化物薄膜的材料为硫化钨、硫化钼、硒化钨及硒化钼中的任意一种。
一种过渡金属硫化物可饱和吸收镜的制备方法,包括如下步骤:
步骤A:将光纤进行切割,形成光纤端面;
步骤B:将切割后的光纤及过渡金属硫化物靶材置于真空室;
步骤C:将过渡金属硫化物靶材表面电离化以产生过渡金属硫化物等离子体,并将所述过渡金属硫化物等离子体沉积在所述光纤端面上,形成过渡金属硫化物薄膜;
步骤D:控制沉积时间及/或沉积温度,使所述过渡金属硫化物薄膜达到设定厚度;
步骤E:在所述过渡金属硫化物薄膜上镀高反射膜。
进一步地,所述过渡金属硫化物薄膜的材料为硫化钨、硫化钼、硒化钨及硒化钼中的任意一种。
进一步地,所述步骤C中采用脉冲激光沉积法。
一种锁模光纤激光器,包括:半导体泵浦激光器、光学耦合组件、谐振腔;所述谐振腔包括有源光纤、如上所述的任一过渡金属硫化物可饱和吸收镜、光学耦合器;
所述半导体泵浦激光器产生的泵浦光经所述光学耦合组件耦合进入所述谐振腔,并为所述有源光纤提供增益,使其产生激光;
所述过渡金属硫化物可饱和吸收镜用于对所述激光进行锁模;
所述光学耦合器用于输出锁模后的激光。
进一步地,所述谐振腔还包括光环形器;所述光环形器包括第一端、第二端、第三端;
所述激光经所述第一端进入所述光环形器,再经所述第二端进入所述过渡金属硫化物可饱和吸收镜,经所述过渡金属硫化物可饱和吸收镜调制锁模后反射回所述光环形器,再由所述第三端输出。
进一步地,所述谐振腔还包括:
光隔离器,用于使所述激光单向传输;
偏振控制器,用于控制所述激光的偏振态。
一种锁模光纤激光器,包括:半导体泵浦激光器、光学耦合组件、谐振腔;所述谐振腔包括有源光纤、如上所述的任一过渡金属硫化物可饱和吸收镜、二色镜;
所述半导体泵浦激光器产生的泵浦光经所述光学耦合组件耦合进入所述谐振腔,并为所述有源光纤提供增益,使其产生激光;
所述过渡金属硫化物可饱和吸收镜用于对所述激光进行锁模;
所述二色镜对所述泵浦光具有高透过性,对所述激光具有高反射性;
所述泵浦光通过所述二色镜进入所述有源光纤;锁模后的激光通过所述二色镜输出。
有益效果
与现有技术相比,这种新型过渡金属硫化物可饱和吸收镜具有高损伤阈值,结构简单、成本低廉,可靠性高,适于批量生产,同时,采用这种过渡金属硫化物可饱和吸收镜的锁模光纤激光器具有全光纤化、高可靠性和适于成果转化的优点。
附图说明
图1:本发明实施例提供的过渡金属硫化物可饱和吸收镜的结构示意图;
图2:本发明实施例提供的过渡金属硫化物可饱和吸收镜的制备方法流程示意图;
图3:本发明实施例提供的一种锁模光纤激光器的结构示意图;
图4:本发明实施例提供的另一种锁模光纤激光器的谐振腔结构示意图。
本发明的实施方式
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步详细说明。
如图1所示,本发明首先提供了一种过渡金属硫化物可饱和吸收镜1。该可饱和吸收镜1包括光纤、镀在光纤端面的过渡金属硫化物薄膜101、镀在过渡金属硫化物薄膜101上的高反射膜102。高反射膜102可采用具有极高反射率的金膜。其中,光纤可采用单模光纤或掺有稀土的有源光纤。过渡金属硫化物薄膜101的材料可采用硫化钨、硫化钼、硒化钨及硒化钼中的任意一种。
高反射膜102相当于一个高反射镜。这种过渡金属硫化物可饱和吸收镜1的工作原理是,将其作为激光器的一个提供调制的高反射镜。当谐振腔内的激光被该过渡金属硫化物可饱和吸收镜1反射时,激光可被过渡金属硫化物可饱和吸收镜1调制,实现锁模。这种过渡金属硫化物可饱和吸收镜1具有高损伤阈值,对光进行宽带调制的同时可作为光的反射镜,可用于激光系统中脉冲激光产生的关键器件。
如图2所示,本发明还提供了一种过渡金属硫化物可饱和吸收镜1的制备方法,包括如下步骤:
步骤A:将光纤进行切割,形成光纤端面。可通过光纤切割刀进行切割,切割时应注意确保光纤端面平整。
步骤B:将切割后的光纤及过渡金属硫化物靶材置于真空室。将光纤及过渡金属硫化物靶材置于真空室中时应注意保持光纤端面与过渡金属硫化物靶材对准,以确保后续步骤中电离的过渡金属硫化物等离子体能够良好地沉积在光纤端面上。
步骤C:将过渡金属硫化物靶材表面电离化以产生过渡金属硫化物等离子体,并将过渡金属硫化物等离子体沉积在光纤端面上,形成过渡金属硫化物薄膜101。
步骤D:控制沉积时间及/或沉积温度,使过渡金属硫化物薄膜101达到设定厚度。
步骤E:在过渡金属硫化物薄膜101上镀高反射膜102。镀高反射膜102时可采用与镀金属硫化物薄膜同样的方法。
根据上述对过渡金属硫化物可饱和吸收镜1的结构描述可知,在制备该过渡金属硫化物可饱和吸收镜1时,光纤可以是普通单模光纤,也可以是掺稀土的有源光纤,同时,过渡金属硫化物薄膜101的材料可采用硫化钨、硫化钼及硒化锑中的任意一种。具体实施时,在步骤C中可采用脉冲激光沉积法将过渡金属硫化物靶材表面电离后形成等离子体,并使等离子体沉积到光纤端面上,形成过渡金属硫化物薄膜101。在沉积过程中,通过控制沉积时间或沉积温度等参数都能控制沉积的过渡金属硫化物薄膜101厚度,当沉积的过渡金属硫化物薄膜101厚度达到所需厚度时,即可停止沉积。
传统的半导体可饱和吸收镜1采用化学气相沉积法制备,半导体材料需要层层生长,每层都需要精确控制,制备的半导体可饱和吸收镜1带宽仅几十纳米。而本发明利用脉冲激光沉积的方法,制备过程简单,可大批量生产,一块过渡金属硫化物靶材可以制备上千块过渡金属硫化物可饱和吸收镜1。同时,在沉积过程中,通过控制沉积的温度、时间等可以控制沉积的过渡金属硫化物薄膜101的厚度和均匀性,从而可大批量生产,并使制作的过渡金属硫化物可饱和吸收镜1规格一致,制备出的过渡金属硫化物可饱和吸收镜1带宽可从可见光拓展到红外光。
如图3所示,本发明提供了一种锁模光纤激光器。该锁模光纤激光器包括半导体泵浦激光器2、光学耦合组件3、谐振腔。其中,谐振腔包括有源光纤4、如上的任一过渡金属硫化物可饱和吸收镜1、光学耦合器6。光学耦合组件3可采用波分复用器。
该锁模光纤激光器的原理是,半导体泵浦激光器2产生的泵浦光经光学耦合组件3耦合进入谐振腔,并为有源光纤4提供增益,使其产生激光。过渡金属硫化物可饱和吸收镜1对激光进行锁模。具体来说,可饱和吸收镜1可通过过渡金属硫化物薄膜101给谐振腔提供可饱和吸收调制,实现对激光的锁模。光学耦合器6输出锁模后的激光。
该锁模光纤激光器的谐振腔为环形腔结构。该谐振腔还包括光环形器7、光隔离器5和偏振控制器8。光环形器7包括第一端、第二端和第三端。激光经第一端进入光环形器7,再经第二端进入过渡金属硫化物可饱和吸收镜1,经过渡金属硫化物可饱和吸收镜1调制锁模后反射回光环形器7,再由第三端输出。光隔离器5使激光单向传输,偏振控制器8控制激光的偏振态。
本发明还提供了另一种锁模光纤激光器,包括:半导体泵浦激光器2、光学耦合组件3、谐振腔。图4所示为该锁模光纤激光器的谐振腔,该谐振腔为线性腔结构,包括有源光纤4、如上的任一过渡金属硫化物可饱和吸收镜1、二色镜9。有源光纤4与过渡金属硫化物可饱和吸收镜1上的光纤是融为一体的,金属硫化物可饱和吸收镜1上的光纤也可直接采用有源光纤,作为有源光纤4。
该锁模光纤激光器的原理是,半导体泵浦激光器2产生的泵浦光经光学耦合组件3耦合进入谐振腔,并为有源光纤4提供增益,使其产生激光。激光在谐振腔内来回震荡。过渡金属硫化物可饱和吸收镜1对激光进行锁模。具体来说,可饱和吸收镜1可通过过渡金属硫化物薄膜101给谐振腔提供可饱和吸收调制,实现对激光的锁模。高反射膜102的作用是作为一个高反射率的反射镜,并在一定程度上为薄膜提供防护。二色镜9对泵浦光具有高透过性,对激光具有高反射性,泵浦光通过二色镜9进入有源光纤4,锁模后的激光通过二色镜9输出。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种过渡金属硫化物可饱和吸收镜,其特征在于,包括光纤、镀在所述光纤端面的过渡金属硫化物薄膜、镀在所述过渡金属硫化物薄膜上的高反射膜。
  2. 如权利要求1所述的过渡金属硫化物可饱和吸收镜,其特征在于,所述高反射膜为金膜。
  3. 如权利要求1所述的过渡金属硫化物可饱和吸收镜,其特征在于,所述过渡金属硫化物薄膜的材料为硫化钨、硫化钼、硒化钨及硒化钼中的任意一种。
  4. 一种过渡金属硫化物可饱和吸收镜的制备方法,其特征在于,包括如下步骤:
    步骤A:将光纤进行切割,形成光纤端面;
    步骤B:将切割后的光纤及过渡金属硫化物靶材置于真空室;
    步骤C:将过渡金属硫化物靶材表面电离化以产生过渡金属硫化物等离子体,并将所述过渡金属硫化物等离子体沉积在所述光纤端面上,形成过渡金属硫化物薄膜;
    步骤D:控制沉积时间及/或沉积温度,使所述过渡金属硫化物薄膜达到设定厚度;
    步骤E:在所述过渡金属硫化物薄膜上镀高反射膜。
  5. 如权利要求4所述的过渡金属硫化物可饱和吸收镜的制备方法,其特征在于,所述过渡金属硫化物薄膜的材料为硫化钨、硫化钼、硒化钨及硒化钼中的任意一种。
  6. 如权利要求4所述的过渡金属硫化物可饱和吸收镜的制备方法,其特征在于,所述步骤C中采用脉冲激光沉积法。
  7. 一种锁模光纤激光器,其特征在于,包括:半导体泵浦激光器、光学耦合组件、谐振腔;所述谐振腔包括有源光纤、如权利要求1至3中任一所述的过渡金属硫化物可饱和吸收镜、光学耦合器;
    所述半导体泵浦激光器产生的泵浦光经所述光学耦合组件耦合进入所述谐振腔,并为所述有源光纤提供增益,使其产生激光;
    所述过渡金属硫化物可饱和吸收镜用于对所述激光进行锁模;
    所述光学耦合器用于输出锁模后的激光。
  8. 如权利要求7所述的锁模光纤激光器,其特征在于,所述谐振腔还包括光环形器;所述光环形器包括第一端、第二端、第三端;
    所述激光经所述第一端进入所述光环形器,再经所述第二端进入所述过渡金属硫化物可饱和吸收镜,经所述过渡金属硫化物可饱和吸收镜调制锁模后反射回所述光环形器,再由所述第三端输出。
  9. 如权利要求8所述的锁模光纤激光器,其特征在于,所述谐振腔还包括:
    光隔离器,用于使所述激光单向传输;
    偏振控制器,用于控制所述激光的偏振态。
  10. 一种锁模光纤激光器,其特征在于,包括:半导体泵浦激光器、光学耦合组件、谐振腔;所述谐振腔包括有源光纤、如权利要求1至3中任一所述的过渡金属硫化物可饱和吸收镜、二色镜;
    所述半导体泵浦激光器产生的泵浦光经所述光学耦合组件耦合进入所述谐振腔,并为所述有源光纤提供增益,使其产生激光;
    所述过渡金属硫化物可饱和吸收镜用于对所述激光进行锁模;
    所述二色镜对所述泵浦光具有高透过性,对所述激光具有高反射性;
    所述泵浦光通过所述二色镜进入所述有源光纤;锁模后的激光通过所述二色镜输出。
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