WO2017063268A1 - 量子点偏光片的制作方法 - Google Patents

量子点偏光片的制作方法 Download PDF

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WO2017063268A1
WO2017063268A1 PCT/CN2015/098140 CN2015098140W WO2017063268A1 WO 2017063268 A1 WO2017063268 A1 WO 2017063268A1 CN 2015098140 W CN2015098140 W CN 2015098140W WO 2017063268 A1 WO2017063268 A1 WO 2017063268A1
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quantum dot
polarizer
layer
substrate
film
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French (fr)
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程小平
李泳锐
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/908,552 priority Critical patent/US20170269274A1/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
    • G02B5/3041—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid comprising multiple thin layers, e.g. multilayer stacks
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3033—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3008—Polarising elements comprising dielectric particles, e.g. birefringent crystals embedded in a matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/814—Group IV based elements and compounds, e.g. CxSiyGez, porous silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/824—Group II-VI nonoxide compounds, e.g. CdxMnyTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/891—Vapor phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/952—Display

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a quantum dot polarizer.
  • quantum dots As a nano-scale material, quantum dots have obvious quantum confinement effects due to their narrow size ( ⁇ 10 nm). When excited by light, when the excitation level exceeds the band gap, electrons transition from the valence band to the conduction band, and The form of light energy is transformed to form different colors; and different colors can be adjusted by controlling the size of the quantum dots themselves. By using the blue light of a backlight (LED) lamp to excite quantum dots, the color gamut of the display can be effectively improved.
  • LED backlight
  • the operating principle of the LCD (Liquid Crystal Display) display device is to use the optical rotation and birefringence of the liquid crystal to control the rotation of the liquid crystal by the voltage, so that the linearly polarized light passing through the upper polarizer rotates accordingly, from the lower polarizer (and The polarization direction of the upper polarizer is emitted vertically, so that the upper and lower polarizers plus the liquid crystal cell function as optical switches.
  • this kind of optical switch can not completely play the light emitted by the quantum dot.
  • the divergent light passing through the quantum dot passes through the liquid crystal, it can no longer control all the light of the corresponding pixel, and the LCD will occur. Light leakage.
  • a common polarizer is a combination of a plurality of layers, and generally includes the following layers, from top to bottom: a surface protective film 110, a first protective layer 120, a polarizing layer 130, and a second The protective layer 140, the adhesive layer 150, and the protective film 160 are peeled off.
  • the layer 130 is usually a polyvinyl alcohol (PVA) layer containing iodine molecules having a polarizing effect; and the first protective layer 120 and the second protective layer 140 are transparent cellulose triacetate (TAC) layers, mainly for maintaining polarized light.
  • PVA polyvinyl alcohol
  • TAC transparent cellulose triacetate
  • a technical solution of a quantum dot polarizer is proposed, that is, the quantum dots are placed in a polarizer.
  • the thermal stability of current polarizing materials is poor. If it is desired to prepare quantum dots on the basis of polarizing materials, the preparation method of quantum dots must be low temperature, which in fact limits the quantum dot materials. The choice and range of preparation.
  • the object of the present invention is to provide a method for fabricating a quantum dot polarizer.
  • the quantum dot layer and the polarizing layer are respectively formed on different substrates, so that the quantum dot layer can be prepared through high and low temperature processes, thereby expanding the selection of quantum dot materials. And preparation range.
  • the present invention provides a method for fabricating a quantum dot polarizer, comprising the following steps:
  • Step 1 providing a first substrate, preparing a quantum dot layer, a first protective layer, and a first adhesive layer on the first substrate to obtain a quantum dot film;
  • Step 2 providing a second substrate, preparing a polarizing layer, a second protective layer, a second adhesive layer, and a peeling protective film on the second substrate to obtain a polarizing film;
  • Step 3 bonding the quantum dot film to the polarizing film through a first adhesive layer to obtain a quantum dot polarizer.
  • the quantum dots contained in the quantum dot layer include a semiconductor composed of a group II-VI element, a semiconductor composed of a group III-V element, and one or more of carbon quantum dots, the quantum The point is a nanoparticle having a stable diameter of 0 to 20 nm.
  • the polarizing film formed in the step 2 is an iodine-based polarizer or a dye-based polarizer.
  • a quantum dot film is formed on the first substrate by a vapor deposition method to obtain a quantum dot layer.
  • the vapor deposition method is a molecular beam epitaxy method or an organometallic chemical vapor deposition method.
  • the quantum dot layer is prepared on the first substrate by providing a quantum dot material and a dissolving medium, dissolving and dispersing the quantum dot material into the dissolving medium, and mixing uniformly.
  • a quantum dot is obtained, and the quantum dot is formed on the first substrate to form a film, and after drying and solidifying, a quantum dot layer is obtained.
  • the quantum dot material is obtained by surface modification of a quantum dot by a surface grafting method or a surface coating method, wherein the quantum dot material is oil-soluble or water-soluble; and the quantum dot has a spherical shape or a rod shape. Or fibrous.
  • the quantum dot glue is formed into a film on the first substrate by spraying, spin coating, printing, or slit coating.
  • the quantum dot polarizer obtained in the step 3 is used as an upper polarizer or a lower polarizer of a liquid crystal display panel.
  • the first substrate, the first protective layer, the quantum dot layer, and the first adhesive layer are sequentially arranged from top to bottom; and the polarizing film obtained in the step 2 is Up to
  • the second layer is a polarizing layer, a second protective layer, a second substrate, a second adhesive layer, and a peeling protective film.
  • the quantum dot polarizer is adhered to the polarizing film by a first adhesive layer. Obtained on the polarizing layer of the sheet; when the quantum dot polarizer is used, the peeling protective film is torn off, and the quantum dot polarizer is attached to the substrate to be attached through the second adhesive layer.
  • the invention also provides a method for manufacturing a quantum dot polarizer, comprising the following steps:
  • Step 1 providing a first substrate, preparing a quantum dot layer, a first protective layer, and a first adhesive layer on the first substrate to obtain a quantum dot film;
  • Step 2 providing a second substrate, preparing a polarizing layer, a second protective layer, a second adhesive layer, and a peeling protective film on the second substrate to obtain a polarizing film;
  • Step 3 bonding the quantum dot film to the polarizing film through a first adhesive layer to obtain a quantum dot polarizer
  • the quantum dots contained in the quantum dot layer comprise a semiconductor composed of a group II-VI element, a semiconductor composed of a group III-V element, and one or more of carbon quantum dots.
  • the quantum dots are nanoparticles having a stable diameter of 0 to 20 nm;
  • the polarizing film formed in the step 2 is an iodine-based polarizer or a dye-based polarizer;
  • the quantum dot polarizer obtained in the step 3 is used as an upper polarizer or a lower polarizer of the liquid crystal display panel;
  • the first substrate, the first protective layer, the quantum dot layer, and the first adhesive layer are sequentially arranged from top to bottom; the polarizing film obtained in the step 2;
  • the top to bottom are a polarizing layer, a second protective layer, a second substrate, a second adhesive layer, and a peeling protective film; in the step 3, the quantum dot polarizer is adhered to the first adhesive layer.
  • the polarizing film is obtained on the polarizing layer; when the quantum dot polarizer is used, the peeling protective film is torn off, and the quantum dot polarizer is attached to the substrate to be attached through the second adhesive layer.
  • the present invention provides a method of fabricating a quantum dot polarizer.
  • the quantum dot layer and the polarizing layer are respectively formed on different substrates to obtain a quantum dot film and a polarizing film, respectively, and then the quantum dot film and the polarizing film are attached.
  • the quantum dot polarizer is not formed on the same substrate in sequence, so that the quantum dot layer in the quantum dot polarizer can be prepared through high and low temperature processes, which expands the selection of the quantum dot material and The preparation range, the quantum dot polarizer obtained by the method, does not cause the phenomenon of light polarization elimination while increasing the color gamut coverage of the display panel.
  • FIG. 1 is a schematic cross-sectional structural view of a conventional polarizer
  • FIG. 2 is a schematic flow chart of a method for fabricating a quantum dot polarizer according to the present invention
  • step 3 is a schematic view of step 3 of the method for fabricating a quantum dot polarizer of the present invention.
  • the present invention provides a method for fabricating a quantum dot polarizer, which includes the following steps:
  • Step 1 providing a first substrate 11, preparing a quantum dot layer 12, a first protective layer 13, and a first adhesive layer 14 on the first substrate 11, to obtain a quantum dot film 1;
  • Step 2 providing a second substrate 21, preparing a polarizing layer 22, a second protective layer 23, a second adhesive layer 24, and a peeling protective film 25 on the second substrate 21, to obtain a polarizing film 2;
  • Step 3 bonding the quantum dot film 1 and the polarizing film 2 through the first adhesive layer 14 to obtain a quantum dot polarizer
  • the preparation of each of the film layers in the steps 1 and 2 can be carried out in any order.
  • the quantum dots included in the quantum dot layer 12 include a semiconductor composed of a group II-VI element (for example, cadmium sulfide (CdS), cadmium selenide (CdSe), and mercury telluride (HgTe).
  • a group II-VI element for example, cadmium sulfide (CdS), cadmium selenide (CdSe), and mercury telluride (HgTe).
  • III-V elements eg, indium phosphide (InP), arsenic
  • InAs indium phosphide
  • GaP gallium phosphide
  • GaAs gallium arsenide
  • the quantum dot layer 12 contains a plurality of quantum dots to achieve a better color gamut lifting effect and a mixing effect.
  • the polarizing film 2 formed in the step 2 is an iodine-based polarizer or a dye-based polarizer.
  • the quantum dot layer 12 can be prepared by a high temperature process, such as an evaporation method, or can be prepared by a low temperature process, such as spraying, spin coating, printing, etc. Solution film formation method.
  • a quantum dot film is formed on the first substrate 11 by an evaporation method such as molecular beam epitaxy, organometallic chemical vapor deposition, or other vapor deposition method to obtain a quantum dot layer 12 . .
  • the quantum dot layer 12 is prepared on the first substrate 11 by providing a quantum dot material and a dissolution medium, and dissolving and dispersing the quantum dot material into the In the dissolution medium, the mixture is uniformly mixed to obtain a quantum dot, and the quantum dot is formed on the first substrate 11 to form a film, which is dried and solidified to obtain a quantum dot layer 12.
  • the quantum dot material is obtained by surface modification of a quantum dot by a surface grafting method or a surface coating method, wherein the quantum dot material is oil-soluble or water-soluble; and the quantum dot has a spherical shape.
  • the quantum dot glue is formed into a film on the first substrate 11 by spraying, spin coating, printing, or slit coating.
  • the quantum dot film 1 obtained in the step 1 the first substrate 11, the first protective layer 13, the quantum dot layer 12, and the first adhesive layer are sequentially arranged from top to bottom. 14;
  • the polarizing film 2 obtained in the step 2 is a polarizing layer 22, a second protective layer 23, a second substrate 21, a second adhesive layer 24, and a peeling protective film 25 from top to bottom;
  • the quantum dot polarizer is obtained by adhering the first adhesive layer 14 to the polarizing layer 22 of the polarizing film 2; when the quantum dot polarizer is used, the peeling protective film 25 is torn off.
  • the quantum dot polarizer is attached to the substrate to be attached by the second adhesive layer 24.
  • the quantum dot polarizer obtained in the step 3 is used as an upper polarizer or a lower polarizer of the liquid crystal display panel, or used in other polarizing applications;
  • the method for fabricating the quantum dot polarizer of the present invention can be used on a BOA (Black Matrix On Array), a COA (Color Filter On Array), a GOA (Gate Driver on Array) type liquid crystal panel, and has no driving mode for the display panel. Restricted to display panels of various modes such as IPS (ln-Plane Switching), TN (Twisted Nematic), VA ((Vertical Alignment), OLED (Organic Light-Emitting Diode), QLED (Quantum Dot Light-Emitting Diode) be usable.
  • IPS Long-Plane Switching
  • TN Transmission Nematic
  • VA Very Alignment
  • OLED Organic Light-Emitting Diode
  • QLED Quadantum Dot Light-Emitting Diode
  • the quantum dot layer and the polarizing layer are respectively formed on different substrates to obtain a quantum dot film and a polarizing film, respectively, and then the quantum dot film,
  • the polarizing film is bonded to obtain a quantum dot polarizer, and the quantum dot polarizer is not formed on the same substrate in sequence, so that the quantum dot layer in the quantum dot polarizer can be prepared through high and low temperature processes, and the quantum is enlarged.
  • the selection and preparation range of the point material, the quantum dot polarizer obtained by the method does not cause the phenomenon of light polarization elimination while increasing the color gamut coverage of the display panel.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Polarising Elements (AREA)

Abstract

一种量子点偏光片的制作方法，将量子点层(12)、偏光层(22)分别形成于不同的基材(11、21)上而分别得到量子点膜片（1）、偏光膜片（2），然后将量子点膜片（1）、偏光膜片（2）相贴合后得到量子点偏光片，量子点偏光片并非在同一基材上依次成膜得到，从而使得量子点偏光片中的量子点层（12）通过高低温制程均可制备，扩大了量子点材料的选择和制备范围，由该方法得到的量子点偏光片，在增加显示面板色域覆盖率的同时，不会发生光偏振消除的现象。

Description

量子点偏光片的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种量子点偏光片的制作方法。
背景技术
为了满足人们对显示器宽色域、色彩高饱和度的需求，通过在背光结构中加入光致发光的量子点器件成为各大显示器厂商的有效选择。
量子点作为纳米级别材料，由于其较窄的尺寸(<10纳米)，量子限域效应明显，当受到光激发时，激发能级超过带隙时，电子从价带跃迁至导带，并以光能的形式转化出来，从而形成不同的颜色；并且可以通过控制量子点本身尺寸的大小来调节出不同的颜色。利用背光LED(light emitting diode，发光二极管)灯的蓝光激发量子点，就可以有效地提高显示器色域。
但是光线经过量子点后，出射方向是随机的。而LCD(Liquid Crystal Display)显示器件的工作原理是利用液晶的旋光性和双折射，通过电压控制液晶的转动，使经过上偏光片后的线偏振光随之发生旋转，从下偏光片(与上偏光片的偏振方向垂直)射出，从而上、下偏光片加上液晶盒起到光开关的作用。显然，这种光学开关对量子点发出的光线无法完全起到作用，当经过量子点后的发散光线穿过液晶时，不再能很好的控制相应像素点位的所有光线，LCD就会发生漏光现象。
如图1所示，普通的偏光片是由多层膜组合而成的，一般包含以下几层，从上到下分别为：表面保护膜110，第一保护层120，偏光层130，第二保护层140，黏着层150，剥离保护膜160。其中，在偏光片贴覆时，剥离保护膜160会被撕掉以露出黏着层150，在偏光片贴覆后，表面保护膜110会被撕掉；该偏光片结构中最核心的部分是偏光层130，通常为含有具有偏光作用的碘分子的聚乙烯醇(PVA)层；而第一保护层120、第二保护层140为透明的三醋酸纤维素(TAC)层，主要是为了维持偏光层130中偏光子的被拉伸状态，避免偏光子水分的流失，保护其不受外界影响。
为了避免将量子点置于液晶盒中而发生光偏振消除的现象，提出了一种量子点偏光片的技术方案，即将量子点置于偏光片中。可是，我们知道现在的偏光材料的耐热稳定性是较差的，如果希望在偏光材料的基础上制备量子点，则量子点的制备方法就必须是低温的，这样其实也是限制了量子点材料的选择和制备范围。
因此，有必要提出一种量子点偏光片的制作方法，以解决上述问题。
发明内容
本发明的目的在于提供一种量子点偏光片的制作方法，量子点层、偏光层分别形成于不同的基材上，使得量子点层通过高低温制程均可制备，从而扩大量子点材料的选择和制备范围。
为实现上述目的，本发明提供一种量子点偏光片的制作方法，包括如下步骤：
步骤1、提供第一基材，在所述第一基材上制备量子点层、第一保护层、及第一黏着层，得到量子点膜片；
步骤2、提供第二基材，在所第二基材上制备偏光层、第二保护层、第二黏着层、及剥离保护膜，得到偏光膜片；
步骤3、通过第一黏着层将所述量子点膜片与所述偏光膜片进行贴合，得到量子点偏光片。
所述步骤1中，所述量子点层内包含的量子点包括Ⅱ-Ⅵ族元素组成的半导体、Ⅲ-Ⅴ族元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子。
所述步骤2中形成的偏光膜片为碘系偏光片、或染料系偏光片。
所述步骤1中，通过蒸镀法在所述第一基材上形成量子点薄膜，得到量子点层。
所述蒸镀法为分子束外延法、或有机金属化学气相沉积法。
所述步骤1中，在所述第一基材上制备量子点层的具体方法为：提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述第一基材上制作成膜，干燥固化后，得到量子点层。
所述量子点材料由量子点经过表面接枝法、或表面包覆法进行表面修饰后得到，所述量子点材料为油溶性、或水溶性；所述量子点的形态为球状、或棒状、或纤维状。
所述步骤1中通过喷涂、旋涂、打印、或狭缝涂布的方式将所述量子点胶在所述第一基材上制作成膜。
所述步骤3得到的量子点偏光片用作液晶显示面板的上偏光片、或者下偏光片。
所述步骤1中得到的量子点膜片内由上至下依次为第一基材、第一保护层、量子点层、及第一黏着层；所述步骤2中得到的偏光膜片内由上至 下依次为偏光层、第二保护层、第二基材、第二黏着层、及剥离保护膜；所述步骤3中，所述量子点偏光片由第一黏着层粘附在所述偏光膜片的偏光层上得到；所述量子点偏光片在使用时，将剥离保护膜撕掉，通过第二黏着层将所述量子点偏光片贴附在待贴附的基板上。
本发明还提供一种量子点偏光片的制作方法，包括如下步骤：
步骤1、提供第一基材，在所述第一基材上制备量子点层、第一保护层、及第一黏着层，得到量子点膜片；
步骤2、提供第二基材，在所第二基材上制备偏光层、第二保护层、第二黏着层、及剥离保护膜，得到偏光膜片；
步骤3、通过第一黏着层将所述量子点膜片与所述偏光膜片进行贴合，得到量子点偏光片；
其中，所述步骤1中，所述量子点层内包含的量子点包括Ⅱ-Ⅵ族元素组成的半导体、Ⅲ-Ⅴ族元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子；
其中，所述步骤2中形成的偏光膜片为碘系偏光片、或染料系偏光片；
其中，所述步骤3得到的量子点偏光片用作液晶显示面板的上偏光片、或者下偏光片；
其中，所述步骤1中得到的量子点膜片内由上至下依次为第一基材、第一保护层、量子点层、及第一黏着层；所述步骤2中得到的偏光膜片内由上至下依次为偏光层、第二保护层、第二基材、第二黏着层、及剥离保护膜；所述步骤3中，所述量子点偏光片由第一黏着层粘附在所述偏光膜片的偏光层上得到；所述量子点偏光片在使用时，将剥离保护膜撕掉，通过第二黏着层将所述量子点偏光片贴附在待贴附的基板上。
本发明的有益效果：本发明提供一种量子点偏光片的制作方法。本发明的量子点偏光片的制作方法，将量子点层、偏光层分别形成于不同的基材上而分别得到量子点膜片、偏光膜片，然后将量子点膜片、偏光膜片相贴合后得到量子点偏光片，量子点偏光片并非在同一基材上依次成膜得到，从而使得量子点偏光片中的量子点层通过高低温制程均可制备，扩大了量子点材料的选择和制备范围，由该方法得到的量子点偏光片，在增加显示面板色域覆盖率的同时，不会发生光偏振消除的现象。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为现有偏光片的剖面结构示意图；
图2为本发明量子点偏光片的制作方法的流程示意图；
图3为本发明量子点偏光片的制作方法的步骤3的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2-3，本发明提供一种量子点偏光片的制作方法，包括如下步骤：
步骤1、提供第一基材11，在所述第一基材11上制备量子点层12、第一保护层13、及第一黏着层14，得到量子点膜片1；
步骤2、提供第二基材21，在所第二基材21上制备偏光层22、第二保护层23、第二黏着层24、及剥离保护膜25，得到偏光膜片2；
步骤3、通过第一黏着层14将所述量子点膜片1与所述偏光膜片2进行贴合，得到量子点偏光片；
所述步骤1和步骤2中各膜层的制备可以按照任意顺序进行。
具体的，所述步骤1中，所述量子点层12内包含的量子点包括Ⅱ-Ⅵ族元素组成的半导体(例如：硫化镉(CdS)、硒化镉(CdSe)、碲化汞(HgTe)、硫化锌(ZnS)、硒化锌(ZnSe)、碲化锌(ZnTe)、硫化汞(HgS)等)、Ⅲ-Ⅴ族元素组成的半导体(例如：磷化铟(InP)、砷化铟(InAs)、磷化镓(GaP)、砷化镓(GaAs)等)、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子；优选的，所述量子点层12内包含的量子点为多种，以达到较好的色域提升效果和混合效果。
具体的，所述步骤2中形成的偏光膜片2为碘系偏光片、或染料系偏光片。
由于，量子点层12、偏光层22分别形成于不同的基材上，那么量子点层12可以由高温制程制备，如蒸镀法，也可以由低温制程制备，如喷涂，旋涂，印刷等溶液成膜法。
具体的，所述步骤1中，通过蒸镀法如分子束外延法、有机金属化学气相沉积法、或其他蒸镀法在所述第一基材11上形成量子点薄膜，得到量子点层12。
或者，所述步骤1中，在所述第一基材11上制备量子点层12的具体方法为：提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述 溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述第一基材11上制作成膜，干燥固化后，得到量子点层12。具体的，所述量子点材料由量子点经过表面接枝法、或表面包覆法进行表面修饰后得到，所述量子点材料为油溶性、或水溶性；所述量子点的形态为球状、或棒状、或纤维状；所述步骤1中通过喷涂、旋涂、打印、或狭缝涂布的方式将所述量子点胶在所述第一基材11上制作成膜。
具体的，如图3所示，所述步骤1中得到的量子点膜片1内由上至下依次为第一基材11、第一保护层13、量子点层12、及第一黏着层14；所述步骤2中得到的偏光膜片2内由上至下依次为偏光层22、第二保护层23、第二基材21、第二黏着层24、及剥离保护膜25；所述步骤3中，所述量子点偏光片由第一黏着层14粘附在所述偏光膜片2的偏光层22上得到；所述量子点偏光片在使用时，将剥离保护膜25撕掉，通过第二黏着层24将所述量子点偏光片贴附在待贴附的基板上。
具体的，所述步骤3得到的量子点偏光片用作液晶显示面板的上偏光片、或者下偏光片，或用于其他偏光应用场合；
本发明的量子点偏光片的制作方法在BOA(Black matrix On Array)、COA(Color filter On Array)、GOA(Gate Driver on Array)型液晶面板上均可使用，且对于显示面板的驱动模式没有限定，对IPS(ln-Plane Switching)、TN(Twisted Nematic)、VA((Vertical Alignment)、OLED(Organic Light-Emitting Diode)、QLED(Quantum Dot Light-Emitting Diode)等多种模式的显示面板均可使用。
综上所述，本发明的量子点偏光片的制作方法，将量子点层、偏光层分别形成于不同的基材上而分别得到量子点膜片、偏光膜片，然后将量子点膜片、偏光膜片相贴合后得到量子点偏光片，量子点偏光片并非在同一基材上依次成膜得到，从而使得量子点偏光片中的量子点层通过高低温制程均可制备，扩大了量子点材料的选择和制备范围，由该方法得到的量子点偏光片，在增加显示面板色域覆盖率的同时，不会发生光偏振消除的现象。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (16)

  1. 一种量子点偏光片的制作方法，包括如下步骤：
    步骤1、提供第一基材，在所述第一基材上制备量子点层、第一保护层、及第一黏着层，得到量子点膜片；
    步骤2、提供第二基材，在所第二基材上制备偏光层、第二保护层、第二黏着层、及剥离保护膜，得到偏光膜片；
    步骤3、通过第一黏着层将所述量子点膜片与所述偏光膜片进行贴合，得到量子点偏光片。
  2. 如权利要求1所述的量子点偏光片的制作方法，其中，所述步骤1中，所述量子点层内包含的量子点包括Ⅱ-Ⅵ族元素组成的半导体、Ⅲ-Ⅴ族元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子。
  3. 如权利要求1所述的量子点偏光片的制作方法，其中，所述步骤2中形成的偏光膜片为碘系偏光片、或染料系偏光片。
  4. 如权利要求1所述的量子点偏光片的制作方法，其中，所述步骤1中，通过蒸镀法在所述第一基材上形成量子点薄膜，得到量子点层。
  5. 如权利要求4所述的量子点偏光片的制作方法，其中，所述蒸镀法为分子束外延法、或有机金属化学气相沉积法。
  6. 如权利要求1所述的量子点偏光片的制作方法，其中，所述步骤1中，在所述第一基材上制备量子点层的具体方法为：提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述第一基材上制作成膜，干燥固化后，得到量子点层。
  7. 如权利要求6所述的量子点偏光片的制作方法，其中，所述量子点材料由量子点经过表面接枝法、或表面包覆法进行表面修饰后得到，所述量子点材料为油溶性、或水溶性；所述量子点的形态为球状、棒状、或纤维状。
  8. 如权利要求6所述的量子点偏光片的制作方法，其中，所述步骤1中通过喷涂、旋涂、打印、或狭缝涂布的方式将所述量子点胶在所述第一基材上制作成膜。
  9. 如权利要求1所述的量子点偏光片的制作方法，其中，所述步骤3得到的量子点偏光片用作液晶显示面板的上偏光片、或者下偏光片。
  10. 如权利要求1所述的量子点偏光片的制作方法，其中，所述步骤1中得到的量子点膜片内由上至下依次为第一基材、第一保护层、量子点层、及第一黏着层；所述步骤2中得到的偏光膜片内由上至下依次为偏光层、第二保护层、第二基材、第二黏着层、及剥离保护膜；所述步骤3中，所述量子点偏光片由第一黏着层粘附在所述偏光膜片的偏光层上得到；所述量子点偏光片在使用时，将剥离保护膜撕掉，通过第二黏着层将所述量子点偏光片贴附在待贴附的基板上。
  11. 一种量子点偏光片的制作方法，包括如下步骤：
    步骤1、提供第一基材，在所述第一基材上制备量子点层、第一保护层、及第一黏着层，得到量子点膜片；
    步骤2、提供第二基材，在所第二基材上制备偏光层、第二保护层、第二黏着层、及剥离保护膜，得到偏光膜片；
    步骤3、通过第一黏着层将所述量子点膜片与所述偏光膜片进行贴合，得到量子点偏光片；
    其中，所述步骤1中，所述量子点层内包含的量子点包括Ⅱ-Ⅵ族元素组成的半导体、Ⅲ-Ⅴ族元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子；
    其中，所述步骤2中形成的偏光膜片为碘系偏光片、或染料系偏光片；
    其中，所述步骤3得到的量子点偏光片用作液晶显示面板的上偏光片、或者下偏光片；
    其中，所述步骤1中得到的量子点膜片内由上至下依次为第一基材、第一保护层、量子点层、及第一黏着层；所述步骤2中得到的偏光膜片内由上至下依次为偏光层、第二保护层、第二基材、第二黏着层、及剥离保护膜；所述步骤3中，所述量子点偏光片由第一黏着层粘附在所述偏光膜片的偏光层上得到；所述量子点偏光片在使用时，将剥离保护膜撕掉，通过第二黏着层将所述量子点偏光片贴附在待贴附的基板上。
  12. 如权利要求11所述的量子点偏光片的制作方法，其中，所述步骤1中，通过蒸镀法在所述第一基材上形成量子点薄膜，得到量子点层。
  13. 如权利要求12所述的量子点偏光片的制作方法，其中，所述蒸镀法为分子束外延法、或有机金属化学气相沉积法。
  14. 如权利要求11所述的量子点偏光片的制作方法，其中，其中，所述步骤1中，在所述第一基材上制备量子点层的具体方法为：提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述第一基材上制作成膜，干燥固 化后，得到量子点层。
  15. 如权利要求14所述的量子点偏光片的制作方法，其中，所述量子点材料由量子点经过表面接枝法、或表面包覆法进行表面修饰后得到，所述量子点材料为油溶性、或水溶性；所述量子点的形态为球状、棒状、或纤维状。
  16. 如权利要求14所述的量子点偏光片的制作方法，其中，所述步骤1中通过喷涂、旋涂、打印、或狭缝涂布的方式将所述量子点胶在所述第一基材上制作成膜。
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