WO2017050808A1 - Micro-fabrication de microélectrodes de carbone pyrolysé tridimensionnelles - Google Patents

Micro-fabrication de microélectrodes de carbone pyrolysé tridimensionnelles Download PDF

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Publication number
WO2017050808A1
WO2017050808A1 PCT/EP2016/072388 EP2016072388W WO2017050808A1 WO 2017050808 A1 WO2017050808 A1 WO 2017050808A1 EP 2016072388 W EP2016072388 W EP 2016072388W WO 2017050808 A1 WO2017050808 A1 WO 2017050808A1
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WO
WIPO (PCT)
Prior art keywords
exposure
photoresist layer
photoresist
lateral
structures
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Application number
PCT/EP2016/072388
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English (en)
Inventor
Suhith HEMANTH
Stephan Sylvest KELLER
Claudia CAVIGLIA
Letizia AMATO
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Danmarks Tekniske Universitet
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Application filed by Danmarks Tekniske Universitet filed Critical Danmarks Tekniske Universitet
Publication of WO2017050808A1 publication Critical patent/WO2017050808A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0037—Production of three-dimensional images
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/213—Exposing with the same light pattern different positions of the same surface at the same time
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Definitions

  • the epoxy-based negative photoresist is an SU- 8 based photoresist.
  • the present invention relates in one aspect to a method of producing a three-dimensional microscale patterned resist template for a pyrolysed carbon microelectrode structure by means of UV-lithography, the method comprising the steps of: coating a planar substrate with a photoresist layer of an SU- 8 based photoresist; soft baking the photoresist layer; performing a full depth expo- sure with UV light through a first mask, thereby defining a first latent image of a vertical support structure extending over the full depth of the photoresist layer; performing a partial depth exposure with UV light through a second mask, thereby defining a second latent image of a lateral structure in a top portion of the photoresist layer; wherein the full depth exposure and the partial depth exposure are aligned to ensure that the first and second latent images are connected to each other; post-exposure baking the photo
  • the soft baking temperature is below 70°C, below 65°C, between 20°C and 60°C, preferably between 30°C and 55°C or about 50°C.
  • the soft bake temperature does not exceed 60°C, and more preferably the soft bake temperature is about 50°C, even though yet lower temperatures may be applicable for thinner layers, below the typical thicknesses between about 20 ⁇ and ⁇ ⁇ .
  • Typical baking times associated with these soft bake tempera- tures are in the range of half hours or hours rather than a few minutes.
  • the hanging structures are formed so as to connect neighbouring support structures.
  • the hanging structures connecting neighbouring support structures may e.g. be formed as beams or bridges, as perforated lateral webs, filigree, membranes, or the like.
  • full depth exposures are performed at a first UV wavelength, such as the i-line at 365nm, and the partial depth exposures are performed at a second UV wavelength different from the first UV wavelength, wherein the absorption of UV light by the SU-8 based resist is higher at the second UV wavelength as compared to the first UV wavelength.
  • Performing exposures at separate wavelengths allows for adapting the optics to the type of the exposure for pattern transfer, and accordingly to separately optimizing the optics of the full depth exposure pattern transfer and of the partial depth exposure pattern transfer.
  • a deep UV line above 360nm is chosen for the full depth exposure in agreement with the optical properties of common SU-8 formulations, such as those recited above.
  • the first epoxy-based negative photoresist is an SU-8 based photoresist.
  • the soft baking temperature is between 20 °C and 60 °C, preferably between 30 °C and 55 °C or about 50 °C.
  • post-exposure baking is performed at a temperature equal to or below the soft baking temperature.
  • Figs 8a-k a schematic of a process flow for providing a carbon electrode in a layout for use in a microfluidic electrochemical cell.
  • the freestanding microscale polymer template with lateral elements 7 supported by vertical support elements 6 is seen in Fig.l c.
  • the template is then pyrolysed using a known carbon MEMS carbonization process for converting SU-8 polymer templates into conductive carbon structures.
  • the pyrol- ysis step involves heating the template in an inert atmosphere to high temperatures, e.g. in Ar, H 2 or N 2 or mixtures of N 2 and H 2 to temperatures of about 900-1 100°C.
  • the final microscale electrode of conductive carbon is obtained as a single level structure as seen in Fig.1 d.
  • Example 5 provides a proces flow for fabricating a three-dimensional microscale patterned resist template for use in a pyrolysed carbon microelectrode structure using UV-lithography, The process includes using a layer stack comprising two different photoresissts on top of each other, which are exposed at respective wave- lengths. By this porcess, a reliable vertical thickness control of the lateral hanging structures is achieved:

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Selon un aspect, la présente invention concerne un procédé de fabrication d'un gabarit de réserve à motifs à l'échelle microscopique tridimensionnel pour une structure de microélectrode de carbone pyrolysé au moyen d'une lithographie par UV. Le procédé consiste : à revêtir d'une résine photosensible négative à base d'époxy, telle qu'une résine photosensible SU-8, un substrat plan ; à cuire lentement la couche de résine photosensible ; à réaliser une exposition en profondeur totale à l'aide de la lumière UV à travers un premier masque ; à réaliser une exposition en profondeur partielle à l'aide de la lumière UV à travers un second masque, l'exposition en profondeur totale et l'exposition en profondeur partielle étant alignées de façon à garantir la liaison entre les première et seconde images latentes ; à cuire après exposition la couche de résine photosensible ; et à développer le gabarit de réserve à motifs à l'échelle microscopique en tant que structure autonome de réserve réticulée avec des structures suspendues latérales qui sont portées par des structures de support verticales à une hauteur libre au-dessus du substrat. Le procédé est caractérisé par une température de cuisson lente inférieure à 70 °C. La répétition du revêtement et de l'exposition en profondeur partielle permet de fabriquer des structures interconnectées latéralement à plusieurs niveaux. La carbonisation du gabarit de réserve produit de véritables structures de microélectrode de carbone tridimensionnelles.
PCT/EP2016/072388 2015-09-21 2016-09-21 Micro-fabrication de microélectrodes de carbone pyrolysé tridimensionnelles WO2017050808A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15186066 2015-09-21
EP15186066.5 2015-09-21

Publications (1)

Publication Number Publication Date
WO2017050808A1 true WO2017050808A1 (fr) 2017-03-30

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Cited By (6)

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WO2018203872A1 (fr) * 2017-05-01 2018-11-08 Hewlett-Packard Development Company, L.P. Panneaux moulés
US11086048B1 (en) 2020-02-07 2021-08-10 HyperLight Corporation Lithium niobate devices fabricated using deep ultraviolet radiation
WO2021158828A1 (fr) * 2020-02-07 2021-08-12 HyperLight Corporation Dispositifs électro-optiques fabriqués à l'aide d'un rayonnement ultraviolet profond
CN113834859A (zh) * 2021-09-23 2021-12-24 广州天极电子科技股份有限公司 晶界层晶粒晶界性能的微米级电极制备方法及测试方法
WO2022220831A1 (fr) * 2021-04-15 2022-10-20 Hewlett-Packard Development Company, L.P. Compositions hydrophobes photodéfinissables
US11691423B2 (en) 2019-07-30 2023-07-04 Hewlett-Packard Development Company, L.P. Uniform print head surface coating

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US8349547B1 (en) 2009-12-22 2013-01-08 Sandia Corporation Lithographically defined microporous carbon structures

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US8349547B1 (en) 2009-12-22 2013-01-08 Sandia Corporation Lithographically defined microporous carbon structures

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018203872A1 (fr) * 2017-05-01 2018-11-08 Hewlett-Packard Development Company, L.P. Panneaux moulés
US11577456B2 (en) 2017-05-01 2023-02-14 Hewlett-Packard Development Company, L.P. Molded panels
US11691423B2 (en) 2019-07-30 2023-07-04 Hewlett-Packard Development Company, L.P. Uniform print head surface coating
US11780226B2 (en) 2019-07-30 2023-10-10 Hewlett-Packard Development Company, L.P. Fluid ejection devices
US11086048B1 (en) 2020-02-07 2021-08-10 HyperLight Corporation Lithium niobate devices fabricated using deep ultraviolet radiation
WO2021158828A1 (fr) * 2020-02-07 2021-08-12 HyperLight Corporation Dispositifs électro-optiques fabriqués à l'aide d'un rayonnement ultraviolet profond
US11899293B2 (en) 2020-02-07 2024-02-13 HyperLight Corporation Electro optical devices fabricated using deep ultraviolet radiation
EP4100774A4 (fr) * 2020-02-07 2024-03-13 Hyperlight Corp Dispositifs électro-optiques fabriqués à l'aide d'un rayonnement ultraviolet profond
WO2022220831A1 (fr) * 2021-04-15 2022-10-20 Hewlett-Packard Development Company, L.P. Compositions hydrophobes photodéfinissables
CN113834859A (zh) * 2021-09-23 2021-12-24 广州天极电子科技股份有限公司 晶界层晶粒晶界性能的微米级电极制备方法及测试方法

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