WO2017039056A1 - Graphite filament solar cell, direct-heating type plasma treatment apparatus for manufacturing same, manufacturing system, and manufacturing method using same - Google Patents

Graphite filament solar cell, direct-heating type plasma treatment apparatus for manufacturing same, manufacturing system, and manufacturing method using same Download PDF

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WO2017039056A1
WO2017039056A1 PCT/KR2015/010200 KR2015010200W WO2017039056A1 WO 2017039056 A1 WO2017039056 A1 WO 2017039056A1 KR 2015010200 W KR2015010200 W KR 2015010200W WO 2017039056 A1 WO2017039056 A1 WO 2017039056A1
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graphite filament
graphite
solar cell
forming
method
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PCT/KR2015/010200
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French (fr)
Korean (ko)
Inventor
최대규
이동원
이정빈
정종우
김용수
최용재
김현종
장병열
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주식회사 뉴파워 프라즈마
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Priority to KR10-2015-0122546 priority Critical
Priority to KR1020150122563A priority patent/KR101680694B1/en
Priority to KR10-2015-0122550 priority
Priority to KR1020150122550A priority patent/KR101748251B1/en
Priority to KR10-2015-0122563 priority
Priority to KR1020150122546A priority patent/KR101729007B1/en
Application filed by 주식회사 뉴파워 프라즈마 filed Critical 주식회사 뉴파워 프라즈마
Publication of WO2017039056A1 publication Critical patent/WO2017039056A1/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
    • Y02P70/52Manufacturing of products or systems for producing renewable energy
    • Y02P70/521Photovoltaic generators

Abstract

The present invention relates to: a graphite filament solar cell; a direct-heating type plasma treatment apparatus for manufacturing the same; a manufacturing system; and a manufacturing method using the same. The system for manufacturing a graphite filament solar cell, of the present invention, comprises: an arrangement module for arranging at least one graphite filament; a direct-heating plasma treatment module for direct-heat treating the graphite filament in order to form first and second semiconductor layers on the surface of the graphite filament; an antireflective film formation module for forming an antireflective film on the directly heated graphite filament; and a second metal formation module for forming a second metal layer on the graphite film having the antireflective film formed thereon. The system for manufacturing a graphite filament solar cell by using the direct-heating type plasma treatment apparatus, of the present invention, allows, by generating plasma while directly heating a product to be treated, silicon to be stably and rapidly deposited on the surface of the product to be treated. In addition, since manufacturing is simple while manufacturing costs are saved, by directly heating a carbon fiber or a graphite filament and depositing silicon, a solar cell using a carbon fiber or a graphite filament can be produced. Furthermore, a solar cell capable of being used even at extreme temperatures is provided by using a heat resistant graphite filament.

Description

Graphite filament solar cell, plasma processing apparatus of direct heating method for manufacturing same, manufacturing system and manufacturing method using same

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell, and more particularly, to a highly efficient solar cell having solar energy efficiency in various aspects using graphite filament, a manufacturing system thereof, a manufacturing apparatus, and a method thereof.

In the solar cell world market, bulk silicon-based solar cells account for more than 95%, and are mainly used in large-scale solar power generation facilities. However, the range of products that solar cells can be used varies from large-scale photovoltaic power generation to small electronic devices, so that solar cells suitable for building materials such as building exterior walls or glass windows and mobile power generation applications can be customized. Development of battery technology is necessary.

Research into using clean and clean energy such as solar energy as a new energy source instead of chemical fuels such as coal and petroleum is being actively conducted worldwide. Of these, solar cells are devices that convert solar energy directly into electrical energy. To explain the principle of the solar cell, when a solar cell, a pn junction type semiconductor having a structure in which p-type and n-type semiconductors are bonded to light, electrons and holes are generated, and the electrons and holes are thus moved to the electrode. And electromotive force is generated and photovoltaic generation occurs. Such solar cells can be broadly divided into silicon based solar cells and compound semiconductor based solar cells.

Silicon-based solar cells are mainly used single crystal silicon, called dry solar cells, the biggest advantage is that it can be manufactured as a thin film solar cell. However, in terms of price, there is a side that is not competitive except in the case of aviation and aerospace industry. Therefore, although the use of amorphous silicon solar cells or polycrystalline silicon solar cells, which are relatively inexpensive to manufacture, is increasing, there is a disadvantage that the light conversion efficiency is lower than that of single crystal silicon. In addition, the overall problem of the silicon-based solar cell has a limitation in the direction of receiving sunlight using only one surface.

On the other hand, compound semiconductor solar cells composed of CuInSe2, CdTe, GaAs and derivatives connected thereto have problems of high cost, low efficiency, and low stability compared to excellent battery characteristics, making it difficult to use them in various ranges.

As a solar cell that has recently been in the spotlight in the solar cell field that has a number of challenges, there is a wet solar cell having the advantages of low cost, environmentally friendly, easy manufacturing process, stability and the like.

The wet solar cell is composed of a semiconductor electrode and an electrolyte, and there is a combination solar cell of a single crystal TiO 2 electrode and a Pt electrode which is an n-type semiconductor. When light is irradiated onto a single crystal TiO 2 surface of a wet solar cell, electrons are excited and transferred to a conduction band, and when they reach a platinum electrode through a lead wire, they react with protons to generate hydrogen. Holes in electron bands deprive electrons from water molecules on the surface of TiO2, causing oxygen to disappear. In this case, instead of decomposing water, electric resistance can be generated through the resistance of an external circuit.

A wet solar cell made of such a semiconductor produces a current by increasing a carrier when absorbing band gap energy (Eg), but light of energy smaller than the energy gap cannot be used. Therefore, a wet solar cell made of TiO2 with a band gap energy of 3.2 ev can use less than 4% of the total solar light, and its light utilization efficiency is very low.

In order to solve this problem, after adsorbing any dye (dye) absorbing visible light on the surface of the semiconductor to increase the light utilization efficiency of light, that is, visible light lower than the band gap energy of TiO2, the dye is absorbed Wet solar cells have been developed that increase the carrier of the semiconductor by irradiating light of possible wavelengths. This type of wet solar cell is called a dye-sensitized solar cell, or a Grazell cell.

A dye-sensitized solar cell comprising a TiO 2 coated electrode bonded to a ruthenium-bipyridyl complex, which is a photosensitive dye, and an electrolyte, and a method of manufacturing the same, wherein the solar cell is configured to emit visible light through the ruthenium-biripidyl complex. It is possible to generate a current also by using. Such dye-sensitized solar cells have a simple manufacturing process compared to silicon solar cells and have an advantage of about 20 to 30% of the price of silicon solar cells. However, since the generated voltage is very low (about 0.7V), there are problems that many limitations occur in actual commercialization.

Finally, there are carbon fiber-based solar cells that are emerging as devices that are flexible, elastic, and withstand high temperatures. Carbon fiber has the advantage of being flexible and heat resistant due to the characteristics of the material, but it is used as a solar cell due to the limitation of the expensive material possessed by the carbon fiber itself. Another advantage is that the shape of the material is deformable and the size is small, which makes it difficult to process the solar cell.

Therefore, solar cells can be collected in various directions, which are inexpensive and easy to process, and have high light efficiency.

The present invention is to solve the problems of the prior art as described above, manufacturing a high-efficiency solar cell that can be used to collect the solar light in a multi-direction rather than a one-way direction using a conventional silicon-based solar cell manufacturing equipment Its purpose is to.

The present invention relates to a graphite filament solar cell, a plasma processing apparatus of a direct heating method for manufacturing the same, a manufacturing system and a manufacturing method using the same. Direct heating plasma processing apparatus of the present invention comprises a processing chamber for receiving a process gas for processing the object to be processed; A plasma source for plasma generation in the processing chamber; And a direct heating module for directly heating the object by applying power to the object to be processed provided in the processing chamber.

And the plasma source is an inductively coupled plasma source or a capacitively coupled plasma source.

In addition, the object is characterized in that the carbon fiber or graphite filament.

And the direct heating module is characterized in that it comprises a direct heating tray is mounted on the graphite filament is heated directly.

The direct heating tray may also include a metal jig in which at least one graphite filament is mounted;

A ceramic connecting portion provided between the metal jig; And a power supply source electrically connected to the metal jig to apply power.

The power supply source may include an AC power supply and a DC power supply, and may include a noise filter provided between the power supply source and the metal jig.

A power supply for supplying power to the plasma source; And an impedance matcher for impedance matching between the plasma source and the power supply.

Graphite filament solar cell according to the present invention includes a first electrode containing a graphite filament; A hole transport layer surrounding the first electrode; And a second electrode in contact with a portion of the hole transport layer.

The first electrode includes a graphite filament or a graphite filament coated with a metal.

The hole transport layer includes a polycrystalline silicon formed by a direct heating method.

The hole transport layer may include a combination of a first semiconductor layer and a second semiconductor layer or a combination of a first semiconductor layer, an intrinsic silicon layer, and a second semiconductor layer.

Graphite filament solar cell manufacturing system according to the present invention comprises a batch module for arranging at least one graphite filament; A direct heating plasma processing module for directly heating the graphite filament to form first and second semiconductor layers on the graphite filament surface; An anti-reflection film forming module for forming an anti-reflection film on the directly heated graphite filament; And a second metal forming module for forming a second metal layer on the graphite filament on which the prevention film is formed.

The plasma processing system further includes a first metal layer forming module for forming a first metal layer on a surface after the graphite filament is disposed.

The plasma processing system further includes an insulation layer forming module for forming an insulation layer between the graphite filament and the first metal layer.

The manufacturing method using the graphite filament solar cell manufacturing system of the present invention comprises the steps of disposing at least one graphite filament; Forming a first semiconductor layer on a surface of the graphite filament; Forming a second semiconductor layer in a stacked structure on the first semiconductor layer; Forming an anti-reflection film in a laminated structure on the second semiconductor layer; And forming a second metal layer on the anti-reflection film in a stacked structure.

The method may further include forming a first metal layer on the graphite filament surface.

And forming an insulating layer between the graphite filament and the first metal layer.

The method may further include forming an insulating layer between the first semiconductor layer and the second semiconductor layer.

The present invention relates to a structure of a graphite filament solar cell, a plasma processing apparatus of a direct heating method, a manufacturing system and a manufacturing method using the same, more specifically manufacturing cost using graphite, especially graphite core of graphite filament structure The present invention provides a carbon fiber solar cell manufacturing system which is inexpensive, easy to manufacture solar cells, and has excellent light conversion efficiency capable of absorbing solar light without direction limitation. In addition, by using a graphite filament resistant to heat, it provides a graphite filament solar cell structure that can be used at extreme temperatures, a plasma processing apparatus of a direct heating method, a manufacturing system and a manufacturing method using the same for manufacturing the same.

1 is a view of a graphite filament solar cell manufacturing system according to the present invention.

2 is a view of a method for manufacturing a graphite filament solar cell according to the present invention.

3 is a view showing a solar cell base cell fabricated solar cells on the graphite filament according to the present invention.

Figure 4 is a view showing a solar cell base module fabricated solar cells on the graphite filament according to the present invention.

5 to 8 are diagrams illustrating a solar cell main cell having a lower resistance of a first electrode as an embodiment according to the present invention.

9 and 10 are views showing a solar cell basic cell in which graphite filaments are composed of a first electrode as an embodiment according to the present invention.

FIG. 11 is a view schematically showing a direct heating plasma processing apparatus as a first embodiment for treating carbon fibers.

FIG. 12 is a diagram schematically showing a direct heating plasma processing apparatus as a second embodiment for treating carbon fibers.

FIG. 13 is a view schematically showing a direct heating plasma processing apparatus as a first embodiment for treating graphite filaments.

FIG. 14 is a schematic view of a direct heating plasma processing apparatus as a second embodiment for treating graphite filaments.

15 is a plan view illustrating a direct heating tray in which graphite filaments are installed.

FIG. 16 is a cross-sectional view illustrating a cross section of the direct heating tray of FIG. 15.

Fig. 17 is a circuit diagram related to the noise filter of the present invention.

18 and 20 are SEM photographs of the electrode transport layer formed by placing a voltage difference with the direct heating plasma processing apparatus according to the present invention on the graphite filament.

FIG. 21 shows Raman values of an electrode transport layer formed on graphite filaments.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same configuration in each drawing is shown with the same reference numerals. Detailed descriptions of well-known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention are omitted.

Hereinafter, with reference to the accompanying drawings according to an embodiment of the present invention It describes a graphite filament solar cell manufacturing system and a manufacturing method using the same.

1 is a view of a graphite filament solar cell manufacturing system according to the present invention.

According to the graphite filament solar cell direct heating treatment system 600 as shown, passing through the batch module 300 and the insulating layer forming module 400 and the first metal layer forming module 500 in turn according to the present invention The first electrode of the graphite filament solar cell may be formed. In order to form the first electrode through the manufacturing system as described above, in a modified embodiment does not go through the insulating layer forming module 400, or the insulating layer forming module 400 and the first metal layer forming module 500 It is also possible to form the first electrode without passing through).

Next, in the direct heating plasma processing apparatus 100 according to the present invention, a step of forming a first semiconductor layer and a second semiconductor layer or a first semiconductor layer, an insulating layer, and a second semiconductor layer, which are electrode transport layers, is performed. Next, an anti-reflection film is formed in the anti-reflection film forming module 700 and finally, a graphite filament solar cell is manufactured through the second metal layer forming module 800.

2 is a view of a method for manufacturing a graphite filament solar cell according to the present invention.

In the graphite filament solar cell according to the present invention, a graphite filament disposing step (S100) for disposing a graphite filament on a jig to form a first electrode, followed by an insulating layer forming step (S110), and forming a first metal layer The process goes to step S120. In order to form the first electrode, a method of forming the first electrode may be formed through the three steps as described above. However, the step may be modified by a method of forming the first electrode except the insulating layer or except the insulating layer and the first metal layer. It is possible.

Next, the electrode transport layer is formed through the first semiconductor layer forming step S130, the insulating layer forming step S140, and the second semiconductor layer forming step S150. The electrode transport layer may be formed except for forming the insulating layer (S140).

The graphite filament solar cell according to the present invention is manufactured when the second metal layer is formed through the step S160 of forming the anti-reflection film on the formed electrode transport layer.

3 is a view showing a solar cell base cell fabricated solar cells on the graphite filament according to the present invention.

The primary cell of the graphite filament solar cell is formed of a first electrode layer by forming a first first metal layer 14 having an insulating layer 12 on the graphite filament 10, and then forming a first electrode layer. The first semiconductor layer 16 and the second semiconductor layer 18 are sequentially stacked. Graphite filaments can be used as graphite cores or sharp cores. The electrode transport layer, which is the first semiconductor layer 16 and the second semiconductor layer 18, may be amorphous silicon, crystalline silicon, or polycrystalline silicon, but polycrystalline silicon is preferable in terms of manufacturing cost and light efficiency. After forming the second semiconductor layer 18, an anti-reflection film is coated, although not shown. Next, each of the one or more second metal layers 20 is connected to a current collector 22 that collects current due to light absorption of the graphite filament solar cell, respectively.

Figure 4 is a view showing a solar cell base module fabricated solar cells on the graphite filament according to the present invention.

4 is a solar cell module 50 in which the graphite filament solar cell base cell as described above is modularized, and each graphite filament solar cell base cell is connected. The first metal layer 14 and the second metal layer 20 coated on the base cell graphite filament are connected to each other. In particular, the second metal layer 20 is formed by joining the second metal layer together with each base cell. And modularized, and as shown, a method in which a base cell in which the second metal layer 20 is not formed of a material such as silver epoxy resin is gathered in a row and then metal printed.

5 to 8 illustrate embodiments of the solar cell main cell for lowering the resistance of the first electrode according to the embodiment of the present invention.

As shown in Figures 5 and 6, the graphite filament is not only serves as a support for manufacturing a cylindrical solar cell for absorbing the change in the amount of light according to the position of the sun at each time zone due to the nature of the structure, the manufacturing cost is significantly lower and the treatment Easy to handle during process In addition, the graphite filament 10 may be used alone because a current may flow, but in order to lower the resistance, the performance of the adhesion between the graphite filament and the metal layer used as the first metal layer 14 is improved. For this purpose, an intrinsic silicon layer, silicon oxide (SiO 2), or silicon nitride (SiN x) may be used as the insulating layer 12 having good graphite filament and advice in the middle. The first metal layer 14 is preferably tungsten coated, and may be nickel or aluminum and aluminum epoxy or metal. As the light absorbing layer, the pn junction is formed such that the boron doped first semiconductor layer 16 and the phosphorus doped second semiconductor layer 18 surround the graphite filament 10. The first semiconductor layer 16 has a thickness of about 30 μm and the second semiconductor layer 18 has a thickness of about 1 μm. The first and second semiconductor layers 16 and 18 may directly contact each other, but a silicon layer may be disposed in the middle. One or more second metal layers 20 formed between the light absorbing portions for absorbing the solar cells on the second semiconductor layer 18 each collect current for collecting current due to light absorption of the graphite filament solar cell. Connected by wealth. Silver epoxy is suitable for the second metal layer 20 and various metals are possible.

7 and 8 illustrate a first electrode layer by directly forming the first metal layer 14 without the insulating layer 12 on the graphite filament 10. The first metal layer 14 is preferably tungsten coated, and may be nickel or aluminum and aluminum epoxy or metal. As the light absorbing layer, the pn junction is formed such that the boron doped first semiconductor layer 16 and the phosphorus doped second semiconductor layer 18 surround the graphite filament 10. The first semiconductor layer 16 has a thickness of about 30 μm and the second semiconductor layer 18 has a thickness of about 1 μm. One or more second metal layers 20 formed between the light absorbing portions for absorbing the solar cells on the second semiconductor layer 18 each collect current for collecting current due to light absorption of the graphite filament solar cell. Connected by wealth.

 9 and 10 are views showing a solar cell basic cell in which a first electrode is formed of graphite filament as an embodiment according to the present invention.

The first electrode is made of graphite filament 10, the surface is covered with a silicon layer, and a second semiconductor layer 18, which is doped with a light absorbing layer, is doped with a light absorbing layer, and the silicon layer and boron doped with an insulating layer 12. The first semiconductor layer 16 is stacked in this order, and then the second metal layer 20 is formed. It is also possible for the first and second semiconductor layers 16 and 18 to be stacked without the insulating layer 12. The order of the doped types is not fixed and each neighboring p-i-n junction layer may be insulated by coating the top of the electrode transport layer with a protective layer. The electrode transport layer may be amorphous silicon, crystalline silicon, or polycrystalline silicon, but polycrystalline silicon is preferable in terms of manufacturing cost and light efficiency. The second metal layer 20 may be formed in various ways such as printing, deposition, spin coating, slit coating, connection with a light absorption layer through an adhesive, or a method of further stacking a metal layer on the ITO electrode.

FIG. 11 is a diagram schematically showing a direct heating plasma processing apparatus as a first embodiment for treating carbon fibers, and FIG. 12 is a diagram briefly showing a direct heating plasma processing apparatus as a second embodiment for treating carbon fibers. 17 is a circuit diagram of a noise filter of the present invention.

11 and 12, the plasma processing apparatus 100, 100a according to the present invention includes a processing chamber 110, a plasma source, and a direct heating processing module. The plasma processing apparatuses 100 and 100a are provided with a gas inlet 112 for receiving process gas from a gas supply source (not shown) and a gas outlet 113 for discharging exhaust gas in the reactor body 110. The gas outlet 113 is connected to the exhaust pump 116. The plasma is discharged therein in the processing chamber 110.

The plasma source is a configuration for discharging the plasma into the processing chamber 110. The plasma source is connected to the power supply 120 through the impedance matcher 130 to receive power from the power supply 120. The plasma source may be an inductively coupled plasma using an antenna or a capacitively coupled plasma using a capacitively coupled electrode or a plasma in which inductively coupled with capacitively coupled.

The direct heat treatment module is configured to directly heat the object by applying electric power to the object. The direct heating processing module is composed of a DC power supply 162, an AC power supply 164, and a noise filter 168. The DC power source 162 and the AC power source 164 are electrically connected to the carbon fiber 150 to be processed. The DC power source 162 or the AC power source 164 may selectively apply power to the carbon fiber 150 or may be mixed to apply power to the carbon fiber 150.

When power is applied to the carbon fiber 150, the carbon fiber 150 is generated by a high temperature heat source. At this time, when the process gas is supplied into the processing chamber 110 through the gas inlet 112, the plasma is discharged. Therefore, the carbon fiber 150 is directly heated and decomposes the reaction gas in the processing chamber with a high temperature heat source that generates heat, thereby increasing the rate of depositing a polycrystalline silicon film on the carbon fiber 150. The polycrystalline silicon film deposited on the carbon fiber 150 by the high temperature heat source and the plasma has high crystallization. Carbon fiber 150 deposited using the direct heating plasma processing apparatus 100 according to the present invention can be utilized in a solar cell. Referring to FIG. 16, a noise filter 168 is provided to block high frequencies introduced through carbon fibers (graphite conductors) during plasma generation.

The carbon fiber 150 is wound on the roller 152 and treated in a roll-to-roll method. The processing chamber 110 is provided with a shielding film 114 to prevent the discharged plasma from affecting the carbon fiber 150 before and after the treatment. In the shielding film 114, a gas injection nozzle 116 is provided. By injecting nitrogen (N2) gas through the gas injection nozzle 116, the plasma formed in the shielding film 114 is not discharged to the outside of the shielding film 114.

In FIG. 11, since the plasma source is positioned on one side of the carbon fiber 150, a polycrystalline silicon film is deposited on the carbon fiber 150 in one direction. In FIG. 11, first and second electrodes 142 and 143 are disposed around the carbon fiber 150 in the processing chamber 110 to deposit a polycrystalline silicon film on the entire carbon fiber 150. In this case, the first and second electrodes 142 and 143 may be connected to the same power source to receive the same frequency power, or may be connected to different power sources to receive different frequency power. Therefore, it is possible to deposit a uniform silicon film over the entire carbon fiber 150.

Using the direct heating plasma processing apparatus according to the present invention can heat the carbon fiber 150 without a heater to achieve a high crystallinity and deposition rate by high temperature deposition.

FIG. 13 is a view schematically showing a direct heating plasma processing apparatus as a first embodiment for treating graphite filaments.

Referring to FIG. 13, the direct heating plasma processing apparatus 200 directly heats the rod-shaped graphite filament 250. The plasma processing apparatus 200 includes a processing chamber 210 having a gas inlet 212 and a gas outlet 213, a plasma source 240 for providing plasma in the processing chamber 210, and a graphite filament 250. It consists of a direct heating tray 270.

One or more gas inlets 212 may be formed in the processing chamber 210. The gas outlet 213 is connected to the exhaust pump 216 to discharge the gas in the processing chamber 210. The plasma source 240 is configured to discharge plasma into the processing chamber 210. The plasma source 240 is connected to the power supply 220 through the impedance matcher 230 to receive power from the power supply 220. The plasma source 240 may be an inductively coupled plasma using an antenna or a capacitively coupled plasma using a capacitively coupled electrode or a plasma in which inductively coupled and capacitively coupled are mixed.

The graphite filament 250 is mounted to the direct heating tray 270 for direct heating. A plurality of graphite filaments 250 are mounted on the direct heating tray 270, and the graphite filament 250 is directly heated by applying power. The graphite filament 250 may use, for example, a graphite core (sharp core).

The direct heating tray 270 is connected to a DC power source 262 and an AC power source 264 for applying power to the graphite filament 250. A noise filter 268 is provided to block high frequencies introduced through the graphite filament 250 when plasma is generated. The structure of the direct heating tray 270 will be described in detail below.

FIG. 14 is a schematic view of a direct heating plasma processing apparatus as a second embodiment for treating graphite filaments.

Referring to FIG. 14, the direct heating plasma processing apparatus 200a includes two capacitively coupled electrodes 242 and 244 and is mounted such that the graphite filament 250 is positioned between the two capacitively coupled electrodes 242 and 244. do. The two capacitive coupling electrodes 242 and 244 are connected to the power supply 220 through an impedance matcher 230. In this case, the first and second electrodes 242 and 244 may be connected to the same power source to receive the same frequency power, or may be connected to different power sources to receive different frequency power.

The graphite filament 250 is directly heated by receiving power from the power source 262 and the AC power source 264, and is plasma-treated by a plasma induced by the two capacitive coupling electrodes 242 and 244.

FIG. 15 is a plan view illustrating a direct heating tray in which graphite filaments are installed, and FIG. 16 is a cross-sectional view illustrating a cross section of the direct heating tray of FIG. 15.

15 and 16, the direct heating tray 270 is composed of a metal jig 272 and a ceramic connector 274. Two metal jig 272 is formed in the shape of "", the end of the graphite filament 250 is mounted in the groove. Two metal jigs 272 are mounted at both ends of the graphite filament 250 to fix the graphite filament 250. The metal jig 272 is formed of a conductive material such as metal, and the DC power source 262 and the AC power source 264 are connected to allow the power to be applied to the graphite filament 250. The ceramic connector 274 is provided between the two metal jigs 272 to allow electrical continuity to be interrupted. A plurality of graphite filaments 250 are installed in the direct heating tray 270 to process the plurality of graphite filaments 250 in one treatment process.

18 and 20 are SEM photographs of the electrode transport layer formed by placing a voltage difference with the direct heating plasma processing apparatus according to the present invention on the graphite filament.

As illustrated, the electrode transport layer is effectively laminated on the graphite filament, and the electrode transport layer uses polycrystalline silicon having a higher current-voltage characteristic than amorphous silicon. As a method of depositing polycrystalline silicon on the graphite filament, a doped silicon was deposited by PECVD, and a direct heating method was applied to apply voltage to the graphite filament. The applied voltage is 6V, 8V, 10V, and as shown, it can be seen that the deposition thickness increases as the voltage intensity increases.

FIG. 21 shows Raman values of an electrode transport layer formed on graphite filaments.

The Raman peak of the polycrystalline silicon according to the invention is shown at 520 nm equally to the Raman peak of crystalline silicon. Accordingly, it can be seen that the material quality of the first and second semiconductor layers 16 and 18, which are the hole transport layers according to the present invention, is high.

The structure of the graphite filament solar cell structure of the present invention described above, a plasma processing apparatus of a direct heating method, a manufacturing system, and a manufacturing method using the same are merely exemplary, and are commonly used in the art. Those skilled in the art will appreciate that various modifications and equivalent other embodiments are possible. It will be appreciated that the present invention is not limited to the form mentioned in the above detailed description. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

    Description of Codes:

10 graphite filament 12 insulating layer

14 metal 16 first semiconductor layer

18: second semiconductor layer 20: second electrode layer

22: current collector 50: solar cell module

100, 100a, 200, 200a: direct heating plasma processing apparatus

110, 210: processing chamber 112, 212: gas inlet

113, 213: gas outlet 114: shielding film

116: gas injection nozzles 116, 216: pump

120, 220: power supply 130, 230: impedance matcher

140, 240: plasma sources 142, 242, 143: first and second electrodes

150: carbon fiber 152: roll

162, 262: DC power 164, 264: AC power

168 and 268 noise filter 250 graphite filament

270: direct heating tray 272: metal jig

274: ceramic connection part 300: batch module

400: insulating layer forming module 500: first metal layer forming module

600: Graphite filament solar cell direct heating treatment system

700: antireflection film forming module 800: second metal layer forming module

Claims (18)

  1. A processing chamber for receiving a process gas and processing a target object;
    A plasma source for plasma generation in the processing chamber; And
    And a direct heating module for directly heating the object by applying power to the object to be processed provided in the processing chamber.
  2. The method of claim 1,
    And said plasma source is an inductively coupled plasma source or a capacitively coupled plasma source.
  3. The method of claim 1,
    The to-be-processed object is a plasma processing apparatus of the direct heating method, characterized in that the carbon fiber or graphite filament.
  4. The method of claim 3,
    The direct heating module is a direct heating plasma processing apparatus characterized in that it comprises a direct heating tray is mounted on the graphite filament is heated directly.
  5. The method of claim 4, wherein
    The direct heating tray
    A metal jig in which at least one graphite filament is mounted;
    A ceramic connecting portion provided between the metal jig; And
    And a power supply source electrically connected to the metal jig to apply power.
  6. The method of claim 5,
    The power source includes an AC power source and a DC power source,
    And a noise filter provided between the power supply source and the metal jig.
  7. The method of claim 1,
    A power supply source supplying power to the plasma source; And
    And an impedance matcher for impedance matching between the plasma source and the power supply.
  8. A first electrode including graphite filaments;
    A hole transport layer surrounding the first electrode;
    Graphite filament solar cell comprising a second electrode in contact with a portion of the hole transport layer.
  9. The method of claim 8,
    The first electrode is a graphite filament solar cell, characterized in that the coating of graphite filament or graphite filament with a metal.
  10. The method of claim 8,
    The hole transport layer is a graphite filament solar cell, characterized in that the polycrystalline silicon formed by a direct heating method.
  11. The method of claim 8,
    The hole transport layer is a graphite filament solar cell, characterized in that formed by the combination of the first semiconductor layer and the second semiconductor layer or the combination of the first semiconductor layer and the intrinsic silicon layer and the second semiconductor layer.
  12. A placement module for placing at least one graphite filament;
    A direct heating plasma processing module for directly heating the graphite filament to form first and second semiconductor layers on the graphite filament surface;
    An anti-reflection film forming module for forming an anti-reflection film on the directly heated graphite filament; And
    Graphite filament solar cell manufacturing system, characterized in that it comprises a second metal forming module for forming a second metal layer on the graphite filament formed with a prevention film.
  13. The method of claim 12,
    The manufacturing system further comprises a first metal layer forming module for forming a first metal layer on the surface after the graphite filament is disposed graphite graphite filament solar cell manufacturing system.
  14. The method of claim 13,
    The manufacturing system further comprises an insulating layer forming module for forming an insulating layer between the graphite filament and the first metal layer.
  15. Placing at least one graphite filament;
    Forming a first semiconductor layer on a surface of the graphite filament;
    Forming a second semiconductor layer in a stacked structure on the first semiconductor layer;
    Forming an anti-reflection film in a laminated structure on the second semiconductor layer; And
    Forming a second metal layer in a laminated structure on the anti-reflection film manufacturing method using a graphite filament solar cell manufacturing system characterized in that it comprises.
  16. The method of claim 15,
    The method according to claim 1, further comprising forming a first metal layer on the surface of the graphite filament.
  17. The method of claim 16,
    And forming an insulating layer between the graphite filament and the first metal layer.
  18. The method of claim 15,
    And forming an insulating layer between the first semiconductor layer and the second semiconductor layer.
    A processing chamber for receiving a process gas and processing a target object;
    A plasma source for plasma generation in the processing chamber; And
    And a direct heating module for directly heating the object by applying power to the object to be processed provided in the processing chamber.
PCT/KR2015/010200 2015-08-31 2015-09-25 Graphite filament solar cell, direct-heating type plasma treatment apparatus for manufacturing same, manufacturing system, and manufacturing method using same WO2017039056A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020150122563A KR101680694B1 (en) 2015-08-31 2015-08-31 Graphite filament solar cell
KR10-2015-0122550 2015-08-31
KR1020150122550A KR101748251B1 (en) 2015-08-31 2015-08-31 Plasma processing apparatus of direct heating
KR10-2015-0122563 2015-08-31
KR1020150122546A KR101729007B1 (en) 2015-08-31 2015-08-31 Graphite filament solar cell fabrication system and fabrication method using the same
KR10-2015-0122546 2015-08-31

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818080A (en) * 1994-06-28 1996-01-19 Tonen Corp Carbon fiber silicon composite material
JPH10173213A (en) * 1996-12-06 1998-06-26 Mitsubishi Heavy Ind Ltd Semiconductor element
JP2005142371A (en) * 2003-11-06 2005-06-02 Clean Venture 21:Kk Method of anti reflective film for solar cell
WO2010100702A1 (en) * 2009-03-04 2010-09-10 富士電機ホールディングス株式会社 Film forming method and film forming apparatus
KR20150045674A (en) * 2013-10-21 2015-04-29 충남대학교산학협력단 Method for fabricating solar cell using carbon fiber and solar cell thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7259322B2 (en) * 2006-01-09 2007-08-21 Solyndra, Inc. Interconnects for solar cell devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818080A (en) * 1994-06-28 1996-01-19 Tonen Corp Carbon fiber silicon composite material
JPH10173213A (en) * 1996-12-06 1998-06-26 Mitsubishi Heavy Ind Ltd Semiconductor element
JP2005142371A (en) * 2003-11-06 2005-06-02 Clean Venture 21:Kk Method of anti reflective film for solar cell
WO2010100702A1 (en) * 2009-03-04 2010-09-10 富士電機ホールディングス株式会社 Film forming method and film forming apparatus
KR20150045674A (en) * 2013-10-21 2015-04-29 충남대학교산학협력단 Method for fabricating solar cell using carbon fiber and solar cell thereof

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TWI608558B (en) 2017-12-11

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