TW201709380A - Graphite filament solar cell, plasma processing apparatus of direct heating, fabrication system and fabrication method using the same - Google Patents
Graphite filament solar cell, plasma processing apparatus of direct heating, fabrication system and fabrication method using the same Download PDFInfo
- Publication number
- TW201709380A TW201709380A TW104132164A TW104132164A TW201709380A TW 201709380 A TW201709380 A TW 201709380A TW 104132164 A TW104132164 A TW 104132164A TW 104132164 A TW104132164 A TW 104132164A TW 201709380 A TW201709380 A TW 201709380A
- Authority
- TW
- Taiwan
- Prior art keywords
- graphene
- solar cell
- forming
- layer
- plasma processing
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 238000010438 heat treatment Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910002804 graphite Inorganic materials 0.000 title abstract description 18
- 239000010439 graphite Substances 0.000 title abstract description 18
- 210000004180 plasmocyte Anatomy 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 59
- 229920000049 Carbon (fiber) Polymers 0.000 claims abstract description 32
- 239000004917 carbon fiber Substances 0.000 claims abstract description 32
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910021389 graphene Inorganic materials 0.000 claims description 122
- 229910052732 germanium Inorganic materials 0.000 claims description 23
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 23
- 230000005525 hole transport Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000009616 inductively coupled plasma Methods 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 119
- 210000004027 cell Anatomy 0.000 description 84
- 238000010586 diagram Methods 0.000 description 33
- 239000010408 film Substances 0.000 description 16
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVMHUALAQYRRBM-UHFFFAOYSA-N [P].[P] Chemical compound [P].[P] QVMHUALAQYRRBM-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-O pyridinium Chemical compound C1=CC=[NH+]C=C1 JUJWROOIHBZHMG-UHFFFAOYSA-O 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
本發明係有關於一種太陽能電池，特別有關一種利用石墨烯且具備多方面太陽能效率之高效能太陽能電池、及其製作系統、以及製作裝置及製作方法。 The present invention relates to a solar cell, and more particularly to a high-performance solar cell using graphene and having various solar energy efficiencies, a manufacturing system thereof, a manufacturing device, and a manufacturing method.
在全世界太陽能電池市場中，作為基材使用體矽(Bulk Silicon)之太陽能電池占據95%以上，且主要在大規模太陽能發電設施使用。然而，可使用太陽能電池之產品範圍，從大規模太陽能發電至小型家電十分多種多樣，因而需要開發適合各種用途之太陽能電池技術，如可適用於建築物外壁或玻璃窗等建築材料用途及移動發電用途等之太陽能電池。 In the solar cell market worldwide, solar cells using Bulk Silicon as a substrate occupy 95% or more, and are mainly used in large-scale solar power generation facilities. However, the range of products that can use solar cells ranges from large-scale solar power generation to small-sized home appliances. Therefore, it is necessary to develop solar cell technologies suitable for various applications, such as building materials such as building exterior walls or glass windows, and mobile power generation. Solar cells for use, etc.
在全世界正在積極進行代替石炭、石油等化學燃料，而作為新能量源使用太陽能等無污染清淨能量的研究。其中太陽能電池為可直接將太陽能轉換為電能之裝 置。說明太陽能電池之原理如下，將連接p型半導體與n型半導體而成之pn結型半導體太陽能電池，露出於太陽光，則會產生電子與空穴，如此產生之電子與空穴朝電極側移動，就會產生電動勢而發生光發電。這種太陽能電池依其材料大體上可分為矽太陽能電池及化合物半導體太陽能電池。 In the world, we are actively pursuing the replacement of fossil fuels, petroleum and other chemical fuels, and using new energy sources such as solar energy and other non-polluting clean energy. The solar cell is a device that can directly convert solar energy into electric energy. Set. The principle of the solar cell is as follows. When a pn junction type semiconductor solar cell in which a p-type semiconductor and an n-type semiconductor are connected is exposed to sunlight, electrons and holes are generated, and electrons and holes thus generated move toward the electrode side. , an electromotive force is generated and photovoltaic power generation occurs. Such solar cells are generally classified into germanium solar cells and compound semiconductor solar cells according to their materials.
矽太陽能電池主要使用稱之為乾式太陽能電池之單晶矽，其最大優點為可製作成薄膜太陽能電池。然而除了航空、宇宙產業等以外在價格上沒有競爭優勢。從而使用製作成本相對低廉之非晶矽太陽能電池或多晶矽太陽能電池，呈現增長趨勢，卻存在與單晶矽相比其光電轉換效率較低之缺陷。且矽太陽能電池整體上存在的缺陷為僅使用一個面從而太陽光受光方向受限。 Tantalum solar cells mainly use single crystal germanium called dry solar cells, and their greatest advantage is that they can be fabricated into thin film solar cells. However, there is no competitive advantage in price other than aviation and the universe industry. Therefore, an amorphous germanium solar cell or a polycrystalline germanium solar cell which is relatively inexpensive to produce is used, showing a growing trend, but there is a defect that the photoelectric conversion efficiency is lower than that of the single crystal germanium. Moreover, the defect existing in the solar cell as a whole is that only one surface is used, so that the direction in which the sunlight is received is limited.
另外，由CuInSe2、CdTe、GaAs及其相關衍生物而成之化合物半導體太陽能電池，雖具備優秀電池特性，但存在費用高、效率低、安全性差之缺陷，從而很難廣範使用。 Further, a compound semiconductor solar cell comprising CuInSe 2 , CdTe, GaAs, and related derivatives has excellent battery characteristics, but has disadvantages such as high cost, low efficiency, and poor safety, and thus it is difficult to use it widely.
在如此具衆多技術課題之太陽能電池領域中，最近頗受關注之太陽能電池為，具備價格低廉、親環境、製作工程簡易、安全性等優點的濕式太陽能電池。 In the field of solar cells with such many technical problems, the solar cells that have received much attention recently have wet solar cells that are inexpensive, environmentally friendly, easy to manufacture, and safe.
濕式太陽能電池由半導體電極與電解液構成，也有組合n型半導體即單晶TiO2電極與Pt電極之太陽能電池。在濕式太陽能電池之單晶TiO2表面照射光，電子則被激發並移至導帶，然後通過鉛線移至鉑電極並與 質子反應而產生氫。導帶之空穴則在TiO2表面水分子中吸附電子而消失，並產生氧氣。當染料分子吸收太陽光，就會釋放電子，這些電子經由不同渠道傳到透明導電基板而最終產生電流。 The wet solar cell is composed of a semiconductor electrode and an electrolytic solution, and a solar cell in which an n-type semiconductor, that is, a single crystal TiO 2 electrode and a Pt electrode are combined. When the surface of the single crystal TiO 2 of the wet solar cell is irradiated with light, the electrons are excited and moved to the conduction band, and then moved to the platinum electrode through the lead wire and reacted with the proton to generate hydrogen. The holes in the conduction band disappear by adsorbing electrons in the water molecules on the surface of TiO 2 and generate oxygen. When the dye molecules absorb sunlight, they release electrons that pass through different channels to the transparent conductive substrate to eventually generate current.
這種由半導體而成之濕式太陽能電池，當吸收带隙能(Band Gap Energy)時，載體增加而產生電流，卻不能利用其能量比能隙小之光。因此由带隙能為3.2ev之TiO2而成之濕式太陽能電池，在全部太陽光中僅能使用4%以下，從而其太陽光利用效率十分低。 Such a semiconductor-made wet solar cell, when absorbing Band Gap Energy, increases the carrier to generate current, but cannot use light whose energy is smaller than the energy gap. Therefore, a wet solar cell made of TiO 2 having a band gap of 3.2 ev can be used in only 4% or less of all sunlight, so that the solar light utilization efficiency is extremely low.
為解決這種問題，開發出一種濕式太陽能電池，其為提高其能量比TiO2带隙能低之光即可視光之使用效率，在半導體表面附著能夠吸附可視光之任意染料(dye)後，照射該染料可吸收波長之光線，而增加了半導體載體。這種方式的濕式太陽能電池被稱之為染料敏化太陽能電池(Dye-sensitized Solar Cell)或格雷策爾電池(Gratzell Cell)。 In order to solve this problem, a wet solar cell has been developed which can increase the energy of light having a band gap energy lower than that of TiO 2 to obtain the efficiency of illuminating light, and attach any dye (dye) capable of adsorbing visible light to the surface of the semiconductor. The dye is irradiated to absorb light of a wavelength, and the semiconductor carrier is added. The wet solar cell of this type is called a Dye-sensitized Solar Cell or a Gratzell Cell.
通過一種染料敏化太陽能電池及其製作方法，其由光敏染料即吡啶釕錯合物被結合之TiO2所塗布之電極與電解液構成，該太陽能電池可藉由該吡啶釕錯合物吸收可視光線而產生電流。這種染料敏化太陽能電池比矽太陽能電池，製作工程簡單，且價格僅為矽太陽能電池之20%~30%左右。然而，所生成電壓很低(0.7V左右)，要實際普及使用時存在很多限制。 A dye-sensitized solar cell and a method for fabricating the same, comprising an electrode coated with TiO 2 , which is a photosensitive dye, that is, a pyridinium complex, and an electrolyte, which can be visually absorbed by the pyridinium complex Light produces electricity. The dye-sensitized solar cell is simpler to manufacture than the tantalum solar cell, and the price is only about 20% to 30% of the solar cell. However, the generated voltage is very low (about 0.7V), and there are many limitations in practical use.
最後還有一種碳纖維為基材之太陽能電池， 其作為柔軟(flexible)、彈性強、耐高溫裝置(device)而出現。由於碳纖維材料本身特徵，而具柔軟耐熱之優勢，但碳纖維本身價格昂貴，從而用於太陽能電池時，存在很難節儉費用之缺陷。且材料形狀可變且尺寸微小之優點，在製作太陽能電池時，卻引發工程處理困難之問題。 Finally, there is a solar cell with carbon fiber as the substrate. It appears as a flexible, elastic, and high temperature resistant device. Due to the characteristics of the carbon fiber material itself, it has the advantages of softness and heat resistance, but the carbon fiber itself is expensive, and when it is used for a solar cell, there is a defect that it is difficult to save costs. Moreover, the shape of the material is variable and the size is small, which causes difficulty in engineering processing when manufacturing a solar cell.
因而，需要一種製作成本低廉、處理簡易、從多個方向吸收太陽光、且光電效率高之太陽能電池。 Therefore, there is a need for a solar cell that is inexpensive to manufacture, simple to handle, absorbs sunlight from multiple directions, and has high photoelectric efficiency.
本發明為解決如上所述先前技術之問題而研究出，其目的在於提供一種高效率太陽能電池，其可使用以前矽太陽能電池製作設備，且製作費用低廉，並非一個方向，而從多個方向收集太陽光。 The present invention has been made in order to solve the problems of the prior art as described above, and an object thereof is to provide a high-efficiency solar cell which can be used in a conventional solar cell manufacturing apparatus and which is inexpensive to manufacture, is not in one direction, and is collected from multiple directions. sunshine.
本發明係有關一種石墨烯太陽能電池、用於製作其之直熱式等離子體處理裝置、製作系統及其製作方法。本發明之直熱式等離子體處理裝置，包括：一處理室，用於接收工業氣體而將待加工物進行處理；一等離子體源，用於在該處理室內產生等離子體；及一直熱模塊，將電源施加於該處理室內所具備之待加工物，而對該待加工物進行直接加熱。 The invention relates to a graphene solar cell, a direct thermal plasma processing device for manufacturing the same, a manufacturing system and a manufacturing method thereof. The direct thermal plasma processing apparatus of the present invention comprises: a processing chamber for receiving industrial gas to process the object to be processed; a plasma source for generating plasma in the processing chamber; and a heat module, A power source is applied to the object to be processed provided in the processing chamber, and the object to be processed is directly heated.
進而，特徵在於，該等離體源係電感耦合等離子體或電容耦合等離子體。 Further, the isotropic source is an inductively coupled plasma or a capacitively coupled plasma.
並且，特徵在於，該待加工物係碳纖維或石墨烯。 Further, it is characterized in that the material to be processed is carbon fiber or graphene.
進而，特徵在於，該直熱模塊包括用於安裝該石墨烯而進行直接加熱之直接加熱盤。 Further, the direct heat module includes a direct heating plate for directly mounting the graphene for direct heating.
並且，特徵在於，該直接加熱盤包括：一金屬夾具，用於安裝至少一個該石墨烯；一陶瓷連接部，其設置於該金屬夾具之間；一電源，其與該金屬夾具電連接而施加電源。 And characterized in that the direct heating plate comprises: a metal fixture for mounting at least one of the graphene; a ceramic connecting portion disposed between the metal fixtures; and a power source electrically connected to the metal fixture power supply.
進而，特徵在於，該電源包括交流電源及直流電源，且包括在該電源與該金屬夾具之間所具備之噪音過濾器。 Further, the power source includes an alternating current power source and a direct current power source, and includes a noise filter provided between the power source and the metal fixture.
並且，特徵在於，包括：一電源，其向該等離子體源供應電源；一阻抗匹配器，其用於匹配該等離子體源與該電源之阻抗。 And characterized by comprising: a power source that supplies power to the plasma source; and an impedance matcher for matching the impedance of the plasma source to the power source.
依本發明之石墨烯太陽能電池，包括：一第一電極，其包括石墨烯；一空穴傳輸層，其圍繞該第一電極；一第二電極，其與該空穴傳輸層之一部分相接。 A graphene solar cell according to the present invention comprises: a first electrode comprising graphene; a hole transport layer surrounding the first electrode; and a second electrode connected to a portion of the hole transport layer.
包括：該第一電極係石墨烯或將金屬塗布於石墨烯。 The method includes: coating the first electrode with graphene or coating the metal with graphene.
包括：該空穴傳輸層係以直接加熱方式而成之多晶矽。 The method includes: the hole transport layer is a polycrystalline germanium formed by direct heating.
包括：該空穴傳輸層由第一半導體層與第二半導體層之組合、或者第一半導體層與本徵矽以及第二半導體層之組合而成。 The hole transport layer is composed of a combination of a first semiconductor layer and a second semiconductor layer, or a combination of a first semiconductor layer and an intrinsic germanium and a second semiconductor layer.
依本發明之石墨烯太陽能電池製作系統，包括：一佈置模塊，其用於佈置至少一個石墨烯；一直熱式 等離子體處理模塊，其為了在該石墨烯表面形成第一及第二半導體層，而對該石墨烯進行直接加熱；一抗反射膜形成模塊，其用於在被直接加熱之該石墨烯上形成抗反射膜；一第二金屬層形成模塊，其用於在已設有抗反射膜之該石墨烯上形成第二金屬層。 A graphene solar cell fabrication system according to the present invention, comprising: an arrangement module for arranging at least one graphene; a plasma processing module for directly heating the graphene to form first and second semiconductor layers on the surface of the graphene; an anti-reflection film forming module for forming on the graphene to be directly heated An anti-reflection film; a second metal layer forming module for forming a second metal layer on the graphene on which the anti-reflection film is provided.
進而，該等離子體處理系統更包括一第一金屬層形成模塊，佈置該石墨烯後在其表面形成第一金屬層。 Further, the plasma processing system further includes a first metal layer forming module, and the first metal layer is formed on the surface thereof after the graphene is disposed.
並且，該等離子體處理系統更包括一絕緣層形成模塊，其用於在該石墨烯與該第一金屬層之間形成絕緣層。 Moreover, the plasma processing system further includes an insulating layer forming module for forming an insulating layer between the graphene and the first metal layer.
依本發明之利用石墨烯太陽能電池製作系統之製作方法，包括：佈置至少一個石墨烯之步驟；在該石墨烯表面形成第一半導體層之步驟；在該第一半導體層上以層疊結構形成第二半導體層之步驟；在第二半導體層上以層疊結構形成抗反射膜之步驟；在該抗反射膜上以層疊結構形成第二金屬層之步驟。 A method for fabricating a graphene solar cell fabrication system according to the present invention, comprising: a step of arranging at least one graphene; a step of forming a first semiconductor layer on the surface of the graphene; forming a layered structure on the first semiconductor layer a step of forming a second semiconductor layer on the second semiconductor layer in a laminated structure; and a step of forming a second metal layer in a laminated structure on the anti-reflection film.
並且，更包括在該石墨烯表面形成第一金屬層之步驟。 And further comprising the step of forming a first metal layer on the surface of the graphene.
進而，包括在該石墨烯與該第一金屬層之間還形成絕緣層之步驟。 Further, a step of forming an insulating layer between the graphene and the first metal layer is included.
並且，包括在該石墨烯與該第一金屬層之間還形成絕緣層之步驟。 Further, a step of forming an insulating layer between the graphene and the first metal layer is included.
本發明係有關一種石墨烯太陽能電池構件、 用於製作其之直熱式等離子體處理裝置、製作系統及其製作方法，特別有關一種製作碳纖維太陽能電池方法，其使用石墨烯結構之石墨、尤其使用石墨芯，從而製作成本低廉、製作太陽能電池簡易、方向不受限制而吸收太陽光、光電轉換效率優秀。並且提供一種石墨烯太陽能電池結構、用於製作其之直熱式等離子體處理裝置、製作系統及其製作方法，由於其使用耐熱性強之石墨烯，即使在極限溫度下也可使用。 The invention relates to a graphene solar cell component, The direct thermal plasma processing apparatus, the manufacturing system and the manufacturing method thereof for manufacturing the same, and particularly relates to a method for fabricating a carbon fiber solar cell, which uses graphite of a graphene structure, in particular, a graphite core, thereby making a low cost and manufacturing a solar cell It is simple and unrestricted, absorbs sunlight, and has excellent photoelectric conversion efficiency. Further, a graphene solar cell structure, a direct thermal plasma processing apparatus for manufacturing the same, a fabrication system, and a method for fabricating the same are provided, and since heat-resistant graphene is used, it can be used even at a limit temperature.
10‧‧‧石墨烯 10‧‧‧ Graphene
12‧‧‧絕緣層 12‧‧‧Insulation
14‧‧‧金屬 14‧‧‧Metal
16‧‧‧第一半導體層 16‧‧‧First semiconductor layer
18‧‧‧第二半導體層 18‧‧‧Second semiconductor layer
20‧‧‧第二電極層 20‧‧‧Second electrode layer
22‧‧‧電路匯集部 22‧‧‧Circuit Collection Department
50‧‧‧太陽能電池模塊 50‧‧‧Solar battery module
100、100a、200、200a‧‧‧直熱式等離子體處理裝置 100, 100a, 200, 200a‧‧‧ direct thermal plasma processing unit
110、210‧‧‧處理室 110, 210‧‧ ‧ processing room
112、212‧‧‧進氣口 112, 212‧‧ ‧ air inlet
113、213‧‧‧排氣口 113, 213‧‧ vents
114‧‧‧遮蔽膜 114‧‧‧ Masking film
116‧‧‧氣體噴嘴 116‧‧‧ gas nozzle
116、216‧‧‧泵 116, 216‧‧ ‧ pump
120、220‧‧‧電源 120, 220‧‧‧ power supply
130、230‧‧‧阻抗匹配器 130, 230‧‧‧ impedance matching device
140、240‧‧‧等離子體源 140, 240‧‧‧ plasma source
142、242、143‧‧‧第一、第二電極 142, 242, 143‧‧‧ first and second electrodes
150‧‧‧碳纖維 150‧‧‧carbon fiber
152‧‧‧輥子 152‧‧‧ Roller
162、262‧‧‧直流電源 162, 262‧‧‧ DC power supply
164、264‧‧‧交流電源 164, 264‧‧‧ AC power supply
168、268‧‧‧噪音過濾器 168, 268‧‧ ‧ noise filter
250‧‧‧石墨烯 250‧‧‧ Graphene
270‧‧‧直接加熱盤 270‧‧‧Direct heating plate
272‧‧‧金屬夾具 272‧‧‧Metal fixture
274‧‧‧陶瓷連接部 274‧‧‧Ceramic Connections
300‧‧‧佈置模塊 300‧‧‧ Layout module
400‧‧‧絕緣層形成模塊 400‧‧‧Insulation layer forming module
500‧‧‧第一金屬層形成模塊 500‧‧‧First metal layer forming module
600‧‧‧石墨烯太陽能電池直接加熱處理系統 600‧‧‧Graphene solar cell direct heat treatment system
700‧‧‧抗反射膜形成模塊 700‧‧‧Anti-reflective film forming module
800‧‧‧第二金屬層形成模塊 800‧‧‧Second metal layer forming module
第一圖係依本發明之石墨烯太陽能電池製作系統之圖。 The first figure is a diagram of a graphene solar cell fabrication system in accordance with the present invention.
第二圖係依本發明之石墨烯太陽能電池製作方法之圖。 The second figure is a diagram of a method for fabricating a graphene solar cell according to the present invention.
第三圖係在依本發明之石墨烯上製作太陽能電池的太陽能電池基本單元之圖。 The third figure is a diagram of a basic unit of a solar cell in which a solar cell is fabricated on a graphene according to the present invention.
第四圖係在依本發明之石墨烯上製作太陽能電池的太陽能電池基本模塊之圖。 The fourth figure is a diagram of a basic module of a solar cell in which a solar cell is fabricated on a graphene according to the present invention.
第五圖至第八圖係作為本發明一實施例，減少第一電極阻抗之太陽能電池基本單元之圖。 5 to 8 are views showing a basic unit of a solar cell which reduces the impedance of the first electrode as an embodiment of the present invention.
第九圖及第十圖係作為本發明一實施例圖示用石墨烯形成第一電極之太陽能電池基本單元之圖。 The ninth and tenth drawings are diagrams showing a basic unit of a solar cell in which a first electrode is formed using graphene as an embodiment of the present invention.
第十一圖係用於處理碳纖維之第一實施例-直熱式等離子體處理裝置進行簡略圖示之圖。 The eleventh drawing is a diagram schematically showing a first embodiment for treating carbon fibers, a direct thermal plasma processing apparatus.
第十二圖係用於處理碳纖維之第二實施例-直熱式等離子體處理裝置進行簡略圖示之圖。 Fig. 12 is a diagram schematically showing a second embodiment for treating carbon fibers - a direct thermal plasma processing apparatus.
第十三圖係用於處理石墨烯之第一實施例-直熱式等離子體處理裝置進行簡略圖示之圖。 The thirteenth diagram is a diagram schematically showing a first embodiment for treating graphene, a direct thermal plasma processing apparatus.
第十四圖係用於處理石墨烯之第二實施例-直熱式等離子體處理裝置進行簡略圖示之圖。 Fig. 14 is a diagram schematically showing a second embodiment for treating graphene - a direct thermal plasma processing apparatus.
第十五圖係用於設置石墨烯之直熱盤之平面圖。 The fifteenth diagram is a plan view of a direct heat plate for setting graphene.
第十六圖係第十五圖之直熱盤剖面之剖視圖。 Figure 16 is a cross-sectional view of the cross section of the direct heat plate of Figure 15.
第十七圖係本發明噪音過濾器之電路圖。 Figure 17 is a circuit diagram of the noise filter of the present invention.
第十八圖及第二十圖係用本發明直熱式等離子體處理裝置形成電壓差而在石墨烯上形成電極傳輸層後SMS照片之圖。 Fig. 18 and Fig. 20 are diagrams showing an SMS photograph after forming an electrode transport layer on graphene by forming a voltage difference by the direct thermal plasma processing apparatus of the present invention.
第二十一圖係在石墨烯上所形成電極傳輸層之拉曼光譜之圖。 The twenty-first figure is a diagram of the Raman spectrum of the electrode transport layer formed on graphene.
為充分理解本發明，參照圖示說明本發明之較佳實施例。本發明實施例可進行多種多樣變形，因此本發明範圍並不限於下述詳細說明之實施例。本實施例為了更完整、明確說明本發明給具備本技術領通常知識著而提供。因而圖示中構件形狀等，為了强調明確說明有可能存在誇張繪示。請留意有可能對各圖示中相同構件使用相同 符號圖示。省略了有可能干擾本發明要點之公知功能及構件之詳細描述。 In order to fully understand the present invention, the preferred embodiments of the invention are illustrated by the drawings. The present invention can be variously modified, and the scope of the present invention is not limited to the embodiments described in detail below. The present invention is provided in order to provide a more complete and clear description of the present invention. Therefore, in order to emphasize the explanation, there is a possibility that there is an exaggerated drawing in order to emphasize the shape of the member in the drawing. Please note that it is possible to use the same components for the same components in each illustration. Symbolic illustration. Detailed descriptions of well-known functions and components that may interfere with the gist of the invention are omitted.
第一圖係依本發明之石墨烯太陽能電池製作系統之圖。 The first figure is a diagram of a graphene solar cell fabrication system in accordance with the present invention.
依如圖所示石墨烯太陽能電池直熱式處理系統600，依次經過佈置模塊300、絕緣層形成模塊400及第一金屬層形成模塊500，即可形成依本發明之石墨烯太陽能電池之第一電極。雖然可通過如上所述製作系統形成第一電極，但作為變形實施例，也可無需經過絕緣層形成模塊400，或無需經過絕緣層形成模塊400及第一金屬層形成模塊500，而形成第一電極。 As shown in the figure, the graphene solar cell direct thermal processing system 600, in turn, through the arrangement module 300, the insulating layer forming module 400 and the first metal layer forming module 500, can form the first of the graphene solar cells according to the present invention. electrode. Although the first electrode can be formed by the fabrication system as described above, as a modified embodiment, the module 400 can be formed without passing through the insulating layer, or can be formed without passing through the insulating layer forming module 400 and the first metal layer forming module 500. electrode.
然後進行在依本發明直熱式等離子體處理裝置100上形成電極傳輸層即第一半導體層及第二半導體層、或第一半導體層、絕緣層及第二半導體層之步驟。然後在抗反射膜形成模塊700形成抗反射膜，最後通過第二金屬層形成模塊800製作石墨烯太陽能電池。 Then, a step of forming an electrode transport layer, that is, a first semiconductor layer and a second semiconductor layer, or a first semiconductor layer, an insulating layer, and a second semiconductor layer on the direct thermal plasma processing apparatus 100 of the present invention is performed. Then, an anti-reflection film is formed in the anti-reflection film forming module 700, and finally a graphene solar cell is fabricated through the second metal layer forming module 800.
第二圖係依本發明之石墨烯太陽能電池製作方法之圖。 The second figure is a diagram of a method for fabricating a graphene solar cell according to the present invention.
依本發明石墨烯太陽能電池，依次進行為形成第一電極而在夾具(Jig)上佈置石墨烯之石墨烯佈置步驟S100，然後是結緣層形成步驟S110、第一金屬層形成步驟S120。為形成第一電極，可使用如上所述經過三個步驟之方法，但也可變形步驟為無絕緣層、或無絕緣層及第一金屬層，而形成第一電極之方法。 According to the graphene solar cell of the present invention, the graphene arrangement step S100 of arranging graphene on the jig for forming the first electrode is sequentially performed, followed by the formation layer forming step S110 and the first metal layer forming step S120. To form the first electrode, a method of three steps as described above may be used, but the deforming step may be a method of forming a first electrode without an insulating layer or without an insulating layer and a first metal layer.
然後，通過依次進行第一半導體層形成步驟S130、絕緣層形成步驟S140、第二半導體層形成步驟S150，而形成電極傳輸層。也可無需絕緣層形成步驟S140而形成電極傳輸層。 Then, the electrode transfer layer is formed by sequentially performing the first semiconductor layer forming step S130, the insulating layer forming step S140, and the second semiconductor layer forming step S150. It is also possible to form the electrode transport layer without the insulating layer forming step S140.
在所形成電極傳輸層上方，進行抗反射膜形成步驟S160與第二金屬層形成步驟S170，即可製作依本發明之石墨烯太陽能電池。 Above the formed electrode transport layer, an antireflection film forming step S160 and a second metal layer forming step S170 are performed to fabricate the graphene solar cell according to the present invention.
第三圖係在依本發明之石墨烯上製作太陽能電池之太陽能電池基本單元之圖。 The third figure is a diagram of a basic unit of a solar cell in which a solar cell is fabricated on a graphene according to the present invention.
石墨烯太陽能電池基本單元係在石墨烯10上相隔絕緣層12而形成第一金屬層14而形成第一電極層，然後依次層疊由電極傳輸層即pn結而成的第一半導體層16及第二半導體層18。石墨烯可作為石墨芯或鉛筆芯使用。作為第一半導體層16及第二半導體層18即電極傳輸層，非晶矽、結晶矽、多晶矽均可使用，但考慮到製作成本或光電效率，使用多晶矽為佳。雖形成第二半導體層18以後沒有圖示，但會塗布抗反射膜。然後、一個以上第二金屬層20係連接於通過各石墨烯太陽能電池之光吸收作用而收集電流之電流匯集部22。 The basic unit of the graphene solar cell is formed by separating the edge layer 12 on the graphene 10 to form the first metal layer 14 to form a first electrode layer, and then sequentially laminating the first semiconductor layer 16 formed by the electrode transfer layer, that is, the pn junction. Two semiconductor layers 18. Graphene can be used as a graphite core or a pencil lead. As the electrode transport layer of the first semiconductor layer 16 and the second semiconductor layer 18, an amorphous germanium, a crystalline germanium or a polycrystalline germanium can be used, but in view of production cost or photoelectric efficiency, it is preferable to use polycrystalline germanium. Although the second semiconductor layer 18 is not shown, it is coated with an anti-reflection film. Then, one or more second metal layers 20 are connected to a current collecting portion 22 that collects current by light absorption of each graphene solar cell.
第四圖係在依本發明之石墨烯上製作太陽能電池之太陽能電池基本模塊之圖。 The fourth figure is a diagram of a basic module of a solar cell in which a solar cell is fabricated on a graphene according to the present invention.
第四圖如上所述作為將石墨烯太陽能電池基本單元進行模塊化之太陽能電池模塊50，與各個石墨烯太陽能電池基本單元相連。在基本單元石墨烯所塗布之第 一金屬層14與第二金屬層20相連，尤其第二金屬層20可採用：將分別設有第二金屬層20之基本單元進行結合並模塊化之方法、如圖所示將尚未形成第二金屬層20之基本單元排成一列後，用銀(Silver)環氧樹脂等材料進行金屬印刷之方法。 The fourth figure is as described above as a solar cell module 50 for modularizing a basic unit of a graphene solar cell, and is connected to each of the graphene solar cell basic units. In the basic unit graphene coated A metal layer 14 is connected to the second metal layer 20, and in particular, the second metal layer 20 can adopt a method of combining and modularizing the basic units respectively provided with the second metal layer 20, as shown in the figure. After the basic units of the metal layer 20 are arranged in a row, a metal printing method is performed using a material such as silver epoxy resin.
第五圖至第八圖係作為本發明一實施例，減少第一電極阻抗之太陽能電池基本單元之圖。 5 to 8 are views showing a basic unit of a solar cell which reduces the impedance of the first electrode as an embodiment of the present invention.
如第五圖及第六圖所示，為了吸收按照時間流逝太陽位置移動而轉變之光量，而製作圓筒形狀太陽能電池時，石墨烯依本身結構特徵可發揮支架功能，不僅如此其製作成本非常低，且在處理工程簡易操縱。並且，由於石墨烯10可導電，從而可單獨使用，但為了減少電阻，為了提高石墨烯與作為第一金屬層14使用之金屬層之間附著(Adhesion)性能，在中間作為與石墨烯附著性優秀之絕緣層12可使用本徵矽(Intrinsic)層或二氧化矽(SiO2)或氮化矽(SiNx)。第一金屬層14用鎢塗布為佳，可使用鎳或鋁及環氧鋁或金屬材料。作為光吸收層即pn結，硼(Boron)被摻雜之第一半導體層16及磷(Phosphorus)被摻雜之第二半導體18圍繞石墨烯10而成。第一半導體層16之厚度為30um左右，第二半導體層18之厚度為1um左右。可直接結合第一及第二半導體層16、18，也可在中間佈置矽層。在第二半導體層18上方為吸收太陽能電池而在光吸收部之間形成之一個以上第二金屬層20，連接於通過石墨烯太陽能電池之光吸收作 用而收集電流之各電流匯集部。作為第二金屬層20適合銀環氧樹脂，且可使用各種金屬材料。 As shown in the fifth and sixth figures, in order to absorb the amount of light converted according to the movement of the sun over time, and to produce a cylindrical solar cell, the graphene can exhibit the function of the stent according to its own structural characteristics, and the production cost is very high. Low, and easy to handle in the processing project. Further, since the graphene 10 is electrically conductive, it can be used alone, but in order to reduce electric resistance, in order to improve adhesion between graphene and a metal layer used as the first metal layer 14, adhesion to graphene is provided in the middle. The excellent insulating layer 12 may use an intrinsic layer or cerium oxide (SiO2) or tantalum nitride (SiNx). The first metal layer 14 is preferably coated with tungsten, and nickel or aluminum and epoxy aluminum or a metal material may be used. As a light absorbing layer, that is, a pn junction, boron (Boron) doped first semiconductor layer 16 and phosphorus (Phosphorus) doped second semiconductor 18 surround graphene 10. The thickness of the first semiconductor layer 16 is about 30 μm, and the thickness of the second semiconductor layer 18 is about 1 μm. The first and second semiconductor layers 16, 18 may be directly bonded, or the germanium layer may be disposed in the middle. Above the second semiconductor layer 18, one or more second metal layers 20 formed between the light absorbing portions for absorbing solar cells are connected to light absorption by the graphene solar cells. The current collecting portions of the current are collected for use. As the second metal layer 20, it is suitable for a silver epoxy resin, and various metal materials can be used.
第七圖及第八圖係在石墨烯10上方無絕緣層而直接形成第一金屬層14而形成第一電極部之圖。第一金屬層14上塗布鎢為佳，且鎳或鋁及環氧鋁或金屬材料均可使用。作為光吸收層即pn結，硼(Boron)被摻雜之第一半導體層16及磷(Phosphorus)被摻雜之第二半導體18圍繞石墨烯10而成。第一半導體層16之厚度為30um左右，第二半導體層18之厚度為1um左右。在第二半導體層18上方為吸收太陽能電池而在光吸收部之間形成之一個以上第二金屬層20，連接於通過石墨烯太陽能電池之光吸收作用而收集電流之各電流匯集部。 The seventh and eighth figures are diagrams in which the first metal layer 14 is directly formed without the insulating layer above the graphene 10 to form the first electrode portion. Preferably, tungsten is coated on the first metal layer 14, and nickel or aluminum and epoxy aluminum or a metal material may be used. As a light absorbing layer, that is, a pn junction, boron (Boron) doped first semiconductor layer 16 and phosphorus (Phosphorus) doped second semiconductor 18 surround graphene 10. The thickness of the first semiconductor layer 16 is about 30 μm, and the thickness of the second semiconductor layer 18 is about 1 μm. Above the second semiconductor layer 18, one or more second metal layers 20 formed between the light absorbing portions for absorbing the solar cells are connected to respective current collecting portions for collecting current by light absorption by the graphene solar cells.
第九圖及第十圖係作為本發明一實施例，用石墨烯形成第一電極之太陽能電池基本單元之圖。 The ninth and tenth drawings are diagrams showing a basic unit of a solar cell in which a first electrode is formed using graphene as an embodiment of the present invention.
第一電極由石墨烯10組成，並用矽層覆蓋其表面，且依次層疊用於光吸收層之磷(Phosphorus)被摻雜之第二半導體層18；用於絕緣層12之矽層；硼(Boron)被摻雜之第一半導體層16，然後形成第二金屬層20。也可無需絕緣層12而直接層疊第一及第二半導體層16、18。摻雜方式無所定次序，可用保護層塗布電極傳輸層上方而對各個相鄰之p-i-n結進行絕緣。作為電極傳輸層，非晶矽、結晶矽、多晶矽均可使用，但考慮到製作成本或光電效率，使用多晶矽為佳。第二金屬層20可採用通過印刷、蒸鍍、旋塗、狹縫式塗布、黏合劑與光吸 收層相結合，或在ITO電極上方進一步層疊金屬層之方法等多種方式。 The first electrode is composed of graphene 10 and covers the surface thereof with a germanium layer, and sequentially stacks a phosphorous (Phosphorus) doped second semiconductor layer 18 for the light absorbing layer; a germanium layer for the insulating layer 12; boron ( Boron) is doped with the first semiconductor layer 16, and then the second metal layer 20 is formed. The first and second semiconductor layers 16, 18 may be directly laminated without the insulating layer 12. The doping mode is not determined, and the adjacent p-i-n junctions may be insulated by coating the upper of the electrode transport layer with a protective layer. As the electrode transport layer, an amorphous germanium, a crystalline germanium or a polycrystalline germanium can be used, but in view of production cost or photoelectric efficiency, it is preferred to use polycrystalline germanium. The second metal layer 20 can be applied by printing, evaporation, spin coating, slit coating, adhesive and light absorption. A plurality of methods, such as a method of combining layers or a method of further laminating a metal layer over an ITO electrode.
第十一圖係用於處理碳纖維之第一實施例-直熱式等離子體處理裝置進行簡略圖示之圖，第十二圖係用於處理碳纖維之第二實施例-直熱式等離子體處理裝置進行簡略圖示之圖，第十七圖係本發明噪音過濾器之電路圖。 11 is a diagram showing a first embodiment for processing carbon fibers - a direct thermal plasma processing apparatus, and a twelfth embodiment for processing a carbon fiber - a direct thermal plasma treatment The device is schematically illustrated, and the seventeenth is a circuit diagram of the noise filter of the present invention.
參照第十一圖及第十二圖，依本發明之等離子體處理裝置100、100a包括處理室110與等離子體源及直熱式處理模塊。等離子體處理裝置100、100a具備：一進氣口112，其用於自供氣源(未圖示)接收工業氣體；及一排氣口133，其用於排出反應器本體110內排出氣體。排氣口133連接於排氣泵116。在處理室110內部放電等離子體。 Referring to the eleventh and twelfth drawings, the plasma processing apparatus 100, 100a according to the present invention includes a processing chamber 110 and a plasma source and a direct thermal processing module. The plasma processing apparatus 100, 100a is provided with an intake port 112 for receiving industrial gas from a supply source (not shown), and an exhaust port 133 for exhausting the exhaust gas in the reactor body 110. The exhaust port 133 is connected to the exhaust pump 116. A plasma is discharged inside the processing chamber 110.
等離子體源係用於在處理室110內放電等離子體之構件。等離子體源通過阻抗匹配器130連接於電源120而接收來自電源120之電力。等離子體源可使用利用天線之電感耦合等離子體、或利用電容耦合電極之等離子體、或者將電感耦合與電容耦合混合之等離子體。 The plasma source is a component for discharging plasma within the processing chamber 110. The plasma source is coupled to power source 120 via impedance matcher 130 to receive power from power source 120. The plasma source may use an inductively coupled plasma using an antenna, or a plasma using a capacitive coupling electrode, or a plasma in which an inductive coupling and a capacitive coupling are mixed.
直熱式處理模塊係將電力施加於待加工物而直接加熱待加工物之構件。直熱式處理模塊由直流電源162、交流電源164及噪音過濾器168構成。直流電源162及交流電源164係電連接於待加工物即碳纖維150。直流電源162或交流電源164可選擇性地對碳纖維150施 加電源，也可一起對碳纖維150施加電源。 The direct heat treatment module is a member that directly applies heat to a workpiece to be processed by applying electric power to the object to be processed. The direct heat processing module is composed of a DC power source 162, an AC power source 164, and a noise filter 168. The DC power source 162 and the AC power source 164 are electrically connected to the carbon fiber 150 to be processed. A DC power source 162 or an AC power source 164 can selectively apply carbon fiber 150 With the addition of a power source, it is also possible to apply power to the carbon fiber 150 together.
當給碳纖維150施加電源，碳纖維150則被加熱而發熱高溫從而發揮熱源(heating source)功能。此時若工業氣體經由進氣口112供進處理室110內就會放電等離子體。因此碳纖維150直接加熱，通過其發熱之高溫熱源，將處理室內反應氣體進行分解，因此在碳纖維150上蒸鍍多晶矽膜速度上升。藉由高溫熱源與等離子體而蒸鍍於碳纖維150上之多晶矽具備較高結晶效果。利用依本發明之直熱式等離子體處理裝置100進行蒸鍍之碳纖維150，可用於太陽能電池。參照第十六圖，為防止產生等離子體時通過碳纖維(石墨導體)流入之高頻，而具備噪音過濾器168。 When a power source is applied to the carbon fiber 150, the carbon fiber 150 is heated to generate heat and high temperature to function as a heating source. At this time, if the industrial gas is supplied into the processing chamber 110 through the intake port 112, the plasma is discharged. Therefore, the carbon fiber 150 is directly heated, and the reaction gas in the treatment chamber is decomposed by the high-temperature heat source that generates heat. Therefore, the rate of vapor deposition of the polycrystalline silicon film on the carbon fiber 150 increases. The polycrystalline silicon vapor-deposited on the carbon fiber 150 by the high-temperature heat source and the plasma has a high crystallization effect. The carbon fiber 150 vapor-deposited by the direct thermal plasma processing apparatus 100 according to the present invention can be used for a solar cell. Referring to Fig. 16, a noise filter 168 is provided to prevent a high frequency of inflow of carbon fibers (graphite conductors) when plasma is generated.
碳纖維150捲繞在輥子152上以卷對卷(Rool-to-Rool)方式進行處理。在處理室110具備遮蔽膜114，以防止處理前後之碳纖維150受所放電之等離子體影響。在遮蔽膜114上具備氣體噴嘴116。通過氣體噴嘴115噴射氮氣(N2)，以防止在遮蔽膜114內所生成之等離子體排出到遮蔽膜114外部。 The carbon fiber 150 is wound around a roller 152 and processed in a roll-to-roll manner. The processing chamber 110 is provided with a shielding film 114 to prevent the carbon fibers 150 before and after the treatment from being affected by the plasma to be discharged. A gas nozzle 116 is provided on the shielding film 114. Nitrogen gas (N2) is injected through the gas nozzle 115 to prevent the plasma generated in the shielding film 114 from being discharged to the outside of the shielding film 114.
第十一圖中，等離子體源位於碳纖維150一側，從而在碳纖維150上單向蒸鍍多晶矽。第十一圖中，在處理室110內衣碳纖維150為中心佈置第一、第二電極142、143，對碳纖維150整體上蒸鍍多晶矽膜。此時第一、第二電極142、143可連接於相同電源而接收相同頻率的電源，也可連接於不同電源而接收不同頻率的電源。 因此可對整個碳纖維150均勻地蒸鍍矽膜。 In the eleventh diagram, the plasma source is located on the side of the carbon fiber 150, whereby the polycrystalline silicon is vapor-deposited on the carbon fiber 150. In the eleventh diagram, the first and second electrodes 142 and 143 are disposed centering on the underwear carbon fiber 150 in the processing chamber 110, and the polycrystalline silicon film is vapor-deposited on the carbon fiber 150 as a whole. At this time, the first and second electrodes 142 and 143 can be connected to the same power source to receive the power source of the same frequency, or can be connected to different power sources to receive the power source of different frequencies. Therefore, the entire carbon fiber 150 can be uniformly vapor-deposited.
若利用依本發明之等離子體處理裝置，即使無加熱器也可使碳纖維發熱150，因此110通過高溫蒸鍍而實現較高結晶效率與蒸鍍率。 According to the plasma processing apparatus of the present invention, the carbon fiber can be heated 150 without the heater, so that 110 is subjected to high-temperature vapor deposition to achieve higher crystallization efficiency and vapor deposition rate.
第十三圖係用於處理石墨烯之第一實施例-直熱式等離子體處理裝置進行簡略圖示之圖。 The thirteenth diagram is a diagram schematically showing a first embodiment for treating graphene, a direct thermal plasma processing apparatus.
參照第十三圖直熱式等離子體處理裝置200對棒狀石墨烯250進行直接加熱。等離子體處理裝置200，由具備進氣口212及排氣口213之處理室210、朝處理室210內提供等離子體之等離子體源240及將石墨烯250進行設置之直接加熱盤270構成。 The rod-shaped graphene 250 is directly heated by referring to the direct thermal plasma processing apparatus 200 of the thirteenth diagram. The plasma processing apparatus 200 is composed of a processing chamber 210 having an intake port 212 and an exhaust port 213, a plasma source 240 that supplies plasma into the processing chamber 210, and a direct heating plate 270 that supplies the graphene 250.
處理室210中可形成一個或兩個以上進氣口212。排氣口213與排氣泵216相連而排出處理室210內氣體。等離子體源240為用於朝處理室210內放電等離子體之構件。等離子體源240通過阻抗匹配器230連接於電源220，而自電源220接收電力。等離子體源240，可使用利用天線的電感耦合等離子體或利用電容耦合電極的等離子體或者將電感耦合與電容耦合混合之等離子體。 One or more intake ports 212 may be formed in the process chamber 210. The exhaust port 213 is connected to the exhaust pump 216 to exhaust the gas in the process chamber 210. The plasma source 240 is a member for discharging plasma into the processing chamber 210. Plasma source 240 is coupled to power source 220 via impedance matcher 230 and receives power from power source 220. As the plasma source 240, an inductively coupled plasma using an antenna or a plasma using a capacitive coupling electrode or a plasma in which an inductive coupling and a capacitive coupling are mixed may be used.
石墨烯250為被直接加熱而裝在直接加熱盤270。在直接加熱盤270上安裝多個石墨烯250，並施加電源而直接加熱石墨烯250。石墨烯250可使用如石墨芯(鉛筆芯)。 The graphene 250 is directly heated to be mounted on the direct heating plate 270. A plurality of graphenes 250 are mounted on the direct heating plate 270, and a power source is applied to directly heat the graphene 250. The graphene 250 can be used, for example, a graphite core (pencil core).
直接加熱盤270為了朝石墨烯250施加電源而連接於直流電源262及交流電源264。為防止產生等離 子體時通過石墨烯250流入之高頻，而具備噪音過濾器268。以下詳細說明直接加熱盤270結構。 The direct heating plate 270 is connected to the direct current power source 262 and the alternating current power source 264 for applying power to the graphene 250. To prevent the generation of alienation The daughter body is provided with a noise filter 268 through the high frequency of the flow of the graphene 250. The structure of the direct heating plate 270 will be described in detail below.
第十四圖係用於處理石墨烯之第二實施例-直熱式等離子體處理裝置進行簡略圖示之圖。 Fig. 14 is a diagram schematically showing a second embodiment for treating graphene - a direct thermal plasma processing apparatus.
參照第十四圖，在直熱式等離子體處理裝置220a上具備兩個電容耦合電極242、244，且在兩個電容耦合電極242、244之間佈置石墨烯250。兩個電容耦合電極242、244通過阻抗匹配器230與電源220相連。此時，第一、第二電極242、244可連接於相同電源而接收相同頻率之電源，也可連接於不同電源而接收不同頻率之電源。 Referring to Fig. 14, two capacitive coupling electrodes 242, 244 are provided on the direct thermal plasma processing apparatus 220a, and graphene 250 is disposed between the two capacitive coupling electrodes 242, 244. The two capacitively coupled electrodes 242, 244 are coupled to the power source 220 via an impedance matcher 230. At this time, the first and second electrodes 242, 244 can be connected to the same power source to receive the power of the same frequency, or can be connected to different power sources to receive the power of different frequencies.
石墨烯250自電源262及交流電源264接收電源而被直接加熱，且通過由兩個電容耦合電極242、244產生之等離子體進行等離子處理。 The graphene 250 is directly heated by receiving power from the power source 262 and the AC power source 264, and is plasma-treated by plasma generated by the two capacitive coupling electrodes 242, 244.
第十五圖係用於設置石墨烯之直熱盤之平面圖，第十六圖係圖示第十五圖之直接加熱盤剖面之剖視圖。 The fifteenth diagram is a plan view of a direct heat plate for setting graphene, and the sixteenth diagram is a sectional view showing a section of a direct heating plate of the fifteenth diagram.
參照第十五圖及第十六圖，直接加熱盤270由金屬夾具171及陶瓷連接部274構成。兩個金屬夾具272以“凹”字形而成，且在其凹陷部安裝石墨烯250端部。兩個金屬夾具272裝在石墨烯250兩端而固定石墨烯250。金屬夾具272由金屬等導電性材料形成，且與直流電源262及交流電源264相連而朝石墨烯250施加電源。陶瓷連接部274設在兩個金屬夾具272之間，而掐斷電連 接。 Referring to the fifteenth and sixteenth drawings, the direct heating plate 270 is composed of a metal jig 171 and a ceramic connecting portion 274. The two metal jigs 272 are formed in a "concave" shape, and the ends of the graphene 250 are mounted on the depressed portions thereof. Two metal fixtures 272 are attached to both ends of the graphene 250 to fix the graphene 250. The metal jig 272 is formed of a conductive material such as metal, and is connected to the DC power source 262 and the AC power source 264 to apply power to the graphene 250. The ceramic connecting portion 274 is disposed between the two metal fixtures 272, and the electrical connection is broken. Pick up.
在直接加熱盤270上設置多個石墨烯250，從而可通過一次處理工程對多個石墨烯250進行處理。 A plurality of graphenes 250 are disposed on the direct heating plate 270 so that the plurality of graphenes 250 can be processed by one process.
第十八圖及第二十圖係用本發明直熱式等離子體處理裝置形成電壓差而在石墨烯上形成電極傳輸層後SMS照片之圖。 Fig. 18 and Fig. 20 are diagrams showing an SMS photograph after forming an electrode transport layer on graphene by forming a voltage difference by the direct thermal plasma processing apparatus of the present invention.
如圖所示，在石墨烯上有效層疊電極傳輸層，且電極傳輸層使用與非晶矽相比其電流-電壓特性更優秀的多晶矽。在石墨烯上蒸鍍多晶矽的方法係用PECVD裝置將摻雜矽進行蒸鍍，且採用了對石墨烯施加電壓的直接加熱方式。所施加電壓分別為6V、8V、10V，如圖所示隨著電壓增高，蒸鍍厚度也增加。 As shown in the figure, the electrode transport layer is effectively laminated on the graphene, and the electrode transport layer uses polycrystalline germanium which is superior in current-voltage characteristics to amorphous germanium. The method of vapor-depositing polycrystalline germanium on graphene is to vapor-deposit the doped germanium by a PECVD apparatus, and a direct heating method of applying a voltage to graphene is employed. The applied voltages are 6V, 8V, and 10V, respectively, and as shown in the figure, as the voltage increases, the vapor deposition thickness also increases.
第二十一圖係在石墨烯上所形成電極傳輸層之拉曼光譜之圖。 The twenty-first figure is a diagram of the Raman spectrum of the electrode transport layer formed on graphene.
依本發明之多晶矽拉曼譜峰為520nm與晶矽譜峰相同。可見依本發明之空穴傳輸層即第一半導體層及第二半導體層16、18材料質量很高。 The polymorph Raman peak according to the present invention has a peak of 520 nm and the same peak of the crystal. It can be seen that the hole transport layers according to the present invention, that is, the first semiconductor layer and the second semiconductor layers 16, 18 are of high material quality.
如上說明本發明之石墨烯太陽能電池結構、製作其之直熱式等離子體處理裝置、製造系統及其製作方法之實施例，衹不過一例示。具備本發明所屬技術領域通常知識著，均會明白可據此進行多種多樣變形及等同實施例。均會理解本發明並不限於該詳細說明中所提及方式。因此本發明實際技術保護範圍應依據所附申請專利範圍中技術思想而定。進而、本發明應理解為，包括依據所附申 請專利範圍所定義之本發明精髓與其範圍內所有變形實施與等同實施及替代實施。 The embodiment of the graphene solar cell structure of the present invention, the direct thermal plasma processing apparatus, the manufacturing system, and the method of fabricating the same according to the present invention are described as an example. It will be apparent to those skilled in the art of the invention that various modifications and equivalent embodiments are possible. It will be understood that the invention is not limited to the manners set forth in the Detailed Description. Therefore, the actual technical protection scope of the present invention should be determined according to the technical idea in the scope of the appended patent application. Further, the present invention should be understood to include The essence of the invention, as defined by the scope of the invention, is to be construed as being
600‧‧‧石墨烯太陽能電池直接加熱處理系統 600‧‧‧Graphene solar cell direct heat treatment system
Claims (18)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150122563A KR101680694B1 (en) | 2015-08-31 | 2015-08-31 | Graphite filament solar cell |
| KR1020150122550A KR101748251B1 (en) | 2015-08-31 | 2015-08-31 | Plasma processing apparatus of direct heating |
| KR1020150122546A KR101729007B1 (en) | 2015-08-31 | 2015-08-31 | Graphite filament solar cell fabrication system and fabrication method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201709380A true TW201709380A (en) | 2017-03-01 |
| TWI608558B TWI608558B (en) | 2017-12-11 |
Family
ID=58187787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104132164A TWI608558B (en) | 2015-08-31 | 2015-09-30 | Graphite filament solar cell, plasma processing apparatus of direct heating, fabrication system and fabrication method using the same |
Country Status (2)
| Country | Link |
|---|---|
| TW (1) | TWI608558B (en) |
| WO (1) | WO2017039056A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0818080A (en) * | 1994-06-28 | 1996-01-19 | Tonen Corp | Carbon fiber silicon composite material |
| JPH10173213A (en) * | 1996-12-06 | 1998-06-26 | Mitsubishi Heavy Ind Ltd | Semiconductor element |
| JP2005142371A (en) * | 2003-11-06 | 2005-06-02 | Clean Venture 21:Kk | Method of anti reflective film for solar cell |
| US7259322B2 (en) * | 2006-01-09 | 2007-08-21 | Solyndra, Inc. | Interconnects for solar cell devices |
| DE112009004581T5 (en) * | 2009-03-04 | 2012-09-06 | Fuji Electric Co., Ltd | Layer production method and layer production device |
| KR101525904B1 (en) * | 2013-10-21 | 2015-06-04 | 충남대학교산학협력단 | Method for fabricating solar cell using carbon fiber and solar cell thereof |
-
2015
- 2015-09-25 WO PCT/KR2015/010200 patent/WO2017039056A1/en active Application Filing
- 2015-09-30 TW TW104132164A patent/TWI608558B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2017039056A1 (en) | 2017-03-09 |
| TWI608558B (en) | 2017-12-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hänni et al. | High‐efficiency microcrystalline silicon single‐junction solar cells | |
| KR20140040121A (en) | Graphene-based multi-junctions flexible solar cell | |
| JP2010537423A (en) | Heterogeneous junction silicon solar cell and manufacturing method thereof | |
| CN110690297A (en) | P-type tunneling oxide passivation contact solar cell and preparation method thereof | |
| CN111710747A (en) | Manufacturing method of silicon heterojunction solar cell module | |
| CN102683493A (en) | Preparation method of N-type crystalline silicon double-sided back contact solar cell | |
| CN103050553A (en) | Crystalline silicon solar cell with double-side passivation and preparing method thereof | |
| TWI608558B (en) | Graphite filament solar cell, plasma processing apparatus of direct heating, fabrication system and fabrication method using the same | |
| JP2013214672A (en) | Photoelectric conversion element | |
| JP5248821B2 (en) | Composite solar cell | |
| CN102763227A (en) | Back-surface-field type of heterojunction solar cell and a production method therefor | |
| KR101729007B1 (en) | Graphite filament solar cell fabrication system and fabrication method using the same | |
| RU2532857C1 (en) | Photovoltaic structure | |
| CN103107236B (en) | Heterojunction solar battery and preparation method thereof | |
| KR20110044442A (en) | Transparent electrode for a thin film solar cell and fabricating method thereof | |
| KR20110077769A (en) | Tubular type solar cell module | |
| KR20100096747A (en) | Solar cell and method for manufacturing thereof | |
| KR20090110048A (en) | Transparent conductive thin film, solar cell and the method thereof | |
| WO2015178307A1 (en) | Photoelectric conversion element | |
| KR101748251B1 (en) | Plasma processing apparatus of direct heating | |
| CN214753786U (en) | Solar cell with passivation contact | |
| KR101680694B1 (en) | Graphite filament solar cell | |
| JP5516611B2 (en) | Solar cell manufacturing method and solar cell | |
| KR20120063856A (en) | Solar cell and manufacturing method of the same | |
| JP2004095881A (en) | Thin film solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |