WO2017036094A1 - 光电传感器及其驱动方法、阵列基板和显示装置 - Google Patents

光电传感器及其驱动方法、阵列基板和显示装置 Download PDF

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Publication number
WO2017036094A1
WO2017036094A1 PCT/CN2016/073769 CN2016073769W WO2017036094A1 WO 2017036094 A1 WO2017036094 A1 WO 2017036094A1 CN 2016073769 W CN2016073769 W CN 2016073769W WO 2017036094 A1 WO2017036094 A1 WO 2017036094A1
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Prior art keywords
transistor
gate
photosensor
coupled
reset transistor
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PCT/CN2016/073769
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English (en)
French (fr)
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吴俊纬
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京东方科技集团股份有限公司
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Priority to US15/307,789 priority Critical patent/US10635235B2/en
Priority to EP16784367.1A priority patent/EP3346374A4/en
Publication of WO2017036094A1 publication Critical patent/WO2017036094A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a photoelectric sensor and a driving method thereof, an array substrate, and a display device.
  • a-Si TFT Thin Film Transistor
  • a TFT-LCD Thin Film Transistor Liquid Crystal Display
  • the channel of the a-Si TFT needs to be shielded as much as possible, such as a metal shielding backlight on the backlight side and a color film glass substrate on the other side.
  • the leakage current will change accordingly. When the illumination is stronger, the leakage current is larger, and this current is called photocurrent.
  • Photoelectric conversion and optical input can be realized by utilizing the characteristics of the photocurrent of the a-Si TFT.
  • an integrated optical touch screen can be realized on the TFT-LCD to realize integrated display and touch production.
  • the photoelectric sensor in the prior art optical touch screen is composed of a photo TFT T 1 , a read TFT T 3 and a capacitor C1 as shown in FIG. 1 , and the photo TFT T 1 is used to convert an optical signal into an electrical signal; to maintain a stable electrical signal; readout TFT T 3 for reading an electrical signal to an external circuit for further processing.
  • the drain of the read TFT is connected to a read line, and the read line is generally connected to other read TFTs, and other read TFTs are even when the current photosensor is read. If it is not turned on, it will actually generate a certain leakage current, which will generate noise, which may result in the correct detection of the touch at the corresponding position.
  • a photosensor includes a photocell, an amplifying transistor, a readout transistor, a reset transistor, and a capacitor, and has a plurality of control inputs.
  • the photoelectric element comprises an output end and a reference level input end.
  • An output of the photo-electric element, a gate of the amplifying transistor, and a source of the reset transistor are coupled to a first end of the capacitor.
  • Reference level input of the optoelectronic component The source of the read transistor is connected to the first reference voltage input terminal.
  • the drain of the reset transistor and the drain of the amplifying transistor are connected to a second reference voltage input terminal.
  • the gate of the sense transistor and the gate of the reset transistor are each connected to a control input.
  • the optoelectronic component comprises a phototransistor having a drain connected to an output of the optoelectronic component, a source connected to a reference level input of the optoelectronic component, and a gate connected to a control Input.
  • the first reference voltage is a high voltage and the second reference voltage is a low voltage.
  • the read transistor and the reset transistor have the same on-level.
  • each transistor is an N-type transistor.
  • a gate of the phototransistor is connected to the second reference voltage input terminal.
  • the second end of the capacitor is coupled to the second reference voltage input.
  • the optoelectronic component comprises a photodiode, an anode of the photodiode is coupled to an output of the optoelectronic component, and a cathode is coupled to a reference level input of the optoelectronic component.
  • an array substrate includes a substrate and a plurality of gates and a plurality of data lines formed on the substrate, the plurality of gate lines and the plurality of data lines dividing the array substrate into a plurality of pixel regions.
  • the array substrate further includes: a photosensor formed on the substrate, the photosensor being the photosensor according to any one of the above.
  • the read transistor and the reset transistor have the same on-level.
  • Each photosensor is disposed between the adjacent two rows of gate lines.
  • the control input terminal connected to the gate of the read transistor is connected to the upper row of gate lines of the adjacent two rows of gate lines, and the read transistor is adapted to be turned on when the gate scan pulse is applied on the gate line.
  • a control input coupled to the gate of the reset transistor is coupled to the next row of gate lines of the adjacent two rows of gate lines, the reset transistor being adapted to be turned on when a gate scan pulse is applied to the gate line.
  • a method for driving the photosensor of any of the above includes:
  • a control signal is applied to a control input coupled to a gate of the readout transistor to turn the readout transistor on;
  • a control signal is applied to the control input to which the gate of the reset transistor is coupled to turn the reset transistor on.
  • a display device includes the array substrate according to any one of the above.
  • an amplification transistor is provided to amplify an electrical signal written to the capacitor, so that the intensity of the read signal can be amplified in the readout phase, thereby improving the signal-to-noise ratio of the read signal. Helps improve the accuracy of photoelectric detection.
  • FIG. 1 is a schematic structural view of a photoelectric sensor in the prior art
  • FIG. 2 is a schematic structural diagram of a photoelectric sensor according to an embodiment of the present invention.
  • FIG. 3 is a timing diagram of key signals when the photoelectric sensor shown in FIG. 2 is driven;
  • FIG. 4 is a schematic structural diagram of a photosensor according to another embodiment of the present invention.
  • a photosensor that includes a photocell for converting an optical signal into an electrical signal for output from an output.
  • the optoelectronic component comprises a phototransistor T1.
  • the drain of phototransistor T1 constitutes the output of the optoelectronic component and the source constitutes the reference level input of the optoelectronic component.
  • the gate of phototransistor T1 corresponds to a control input.
  • the photosensor may include a phototransistor T1, an amplifying transistor T2, a readout transistor T3, a reset transistor T4, and a capacitor C1 which are also N-type transistors.
  • the drain of the phototransistor T1, the gate of the amplifying transistor T2, and the source of the reset transistor T4 may be connected to the first end of the capacitor C1, and the source of the read transistor T3 may be connected to the source of the amplifying transistor T2.
  • the source of the phototransistor T1, the amplifying transistor T2, and the source of the read transistor T3 are connected first.
  • the reference voltage (shown as high voltage in the figure) is input to Vbias.
  • the drain of the reset transistor T4 and the drain of the amplifying transistor T2 are connected to a second reference voltage (shown as a low voltage in the drawing) input terminal Vss.
  • the gate of phototransistor T1, the gate of sense transistor T3 and the gate of reset transistor T4 are also each connected to a control input.
  • the gate of the phototransistor T1 can be connected to the low voltage input terminal Vss
  • the gate of the read transistor T3 can be connected to a control signal input terminal Gn
  • the gate of the reset transistor T4 can be connected to another control signal input terminal. Gn+1.
  • the second end of the capacitor C1 can also be connected to the low voltage input terminal Vss.
  • FIG. 3 is a timing chart of key signals when the photosensor shown in FIG. 2 is driven.
  • a method of driving the phototransistor shown in FIG. 2 can be described with reference to FIG. 3. The method includes:
  • a control signal is applied to the control signal input terminal Gn to turn on the read transistor T3.
  • a control signal is applied to the control signal input terminal Gn+1 to turn on the reset transistor T4, thereby resetting the first terminal of the capacitor C1.
  • the control signals herein may be the same high level pulse, and the read transistor T3 and the reset transistor T4 may be turned on, respectively.
  • the current read by the read transistor T3 is amplified several times compared to the current read directly from the first end of the capacitor C1 (the amplification factor is the amplification transistor itself)
  • the structure-dependent constant that is, the useful signal in the signal read by the read line is amplified, and the corresponding signal-to-noise ratio is also increased, thereby improving the accuracy of the photodetection.
  • the turn-on levels of sense transistor T3 and reset transistor T4 are the same. This has the advantage that the read transistor T3 can be turned on by using a driving signal in the upper row of the adjacent two rows of gate lines to complete the signal readout process. Then, the reset transistor T4 is turned on by using a driving signal in the gate line of the next row of the adjacent two rows of gate lines, and the reset process of the first end of the capacitor C1 is completed.
  • the above-mentioned read transistor T3 and reset transistor T4 can also be turned on at different levels and driven by other signal lines, and the corresponding technical solution can also achieve the basic purpose of the present invention, and should also fall into The scope of protection of the present invention.
  • each transistor is an N-type transistor, which has the advantage of being fabricated using the same process, reducing fabrication difficulties.
  • some of the above transistors may be replaced by P-type transistors, and the corresponding technical solutions should also fall within the scope of the present invention.
  • the control signal applied to the gate of the read transistor T3 in the readout phase may be a low level pulse.
  • the reset transistor T4 described above is a P-type transistor, the control signal applied to the gate of the reset transistor T4 in the reset phase may be a low-level pulse.
  • the gate of the phototransistor T1 is also connected to the second reference voltage or the low voltage input terminal Vss, so that the phototransistor T1 is turned off by sharing the low voltage input terminal, so that Phototransistor T1 is capable of sensing a change in illumination to produce a corresponding current.
  • the second end of the capacitor C1 can also be connected to the low voltage input terminal Vss, so that the voltage of the second end of the capacitor C1 can be stabilized to avoid voltage changes caused by static electricity or other factors, thereby A voltage change at the first end of the capacitor C1 is avoided due to a voltage change at the second end of the capacitor C1.
  • the structure of the photosensor provided by another embodiment of the present invention can be referred to FIG. 4.
  • the photosensor of the photosensor includes a photodiode L, that is, a photodiode L is used to replace the photodiode.
  • Transistor T1 The anode of the photodiode L constitutes the output end of the photovoltaic element, and the cathode constitutes the reference level input terminal of the photovoltaic element.
  • the anode of the photodiode L is connected to the first end of the capacitor C1, and the cathode is connected to the first reference voltage (shown as high voltage in the figure) input terminal Vbias.
  • the structure provided by the illustrated embodiment can also perform the corresponding photodetection process and can also increase the signal to noise ratio of the signal detected by the read line.
  • the driving method of the photoelectric sensor provided in the above embodiment may be the same as the driving method described above, and will not be described in detail herein.
  • the invention also provides an array substrate.
  • the array substrate may include a substrate and a plurality of gates and a plurality of data lines formed on the substrate, the plurality of gate lines and the plurality of data lines dividing the array substrate into a plurality of pixel regions.
  • the array substrate may further include: a photosensor formed on the substrate, and the photosensor may be the photosensor described in any one of the above embodiments.
  • each photosensor is disposed between adjacent two rows of gate lines.
  • the control input terminal connected to the gate of the read transistor is connected to the upper row of gate lines of the adjacent two rows of gate lines, and the read transistor is adapted to be applied on the gate line
  • the gate scan pulse is turned on.
  • a control input coupled to the gate of the reset transistor is coupled to the next row of gate lines of the adjacent two rows of gate lines, the reset transistor being adapted to be turned on when a gate scan pulse is applied to the gate line.
  • the above-mentioned gate scan pulse may be a high-level pulse as shown in FIG. 3, and the read transistor and the reset transistor may be respectively turned on. .
  • the driving process of the photosensor can be completed by means of the existing signal line, and the structural complexity of the display substrate is reduced.
  • the display substrate may be a display substrate in a liquid crystal display device or a display substrate in an organic electroluminescence display device.
  • a display device comprising the display substrate described above.
  • the display device may be any product or component having a display function, such as an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • a display function such as an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • the display device provided by the present invention may be a liquid crystal display device or other types of display devices.

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  • Solid State Image Pick-Up Elements (AREA)

Abstract

一种光电传感器及其驱动方法、阵列基板和显示装置。光电传感器包括：光电元件（T1）、放大晶体管（T2）、读出晶体管（T3）、复位晶体管（T4）和电容（C1），并具有若干控制输入端。光电元件（T1）包括输出端和参考电平输入端。光电元件（T1）的输出端、放大晶体管（T2）的栅极和复位晶体管（T3）的源极连接电容（C1）的第一端。光电元件（T1）的参考电平输入端、读出晶体管（T3）的源极、放大晶体管（T2）的源极连接第一参考电压输入端（Vbias）。复位晶体管（T4）的漏极、放大晶体管（T2）的漏极连接第二参考电压输入端（Vss）。读出晶体管（T3）的栅极和复位晶体管（T4）的栅极各自连接一个控制输入端。设置放大晶体管（T2）对写入到电容（C1）的电信号进行放大，能够在读出阶段，放大所读出的信号的强度，从而提高读取到的信号的信噪比，有助于提高光电检测精度。

Description

光电传感器及其驱动方法、阵列基板和显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种光电传感器及其驱动方法、阵列基板和显示装置。
背景技术
当a-Si TFT(薄膜晶体管)暴露在可见光时，会产生较大的光电流。在TFT-LCD(薄膜晶体管液晶显示器)中，为了保证较低的漏电流，a-Si TFT的沟道需要尽可能遮光，如在背光一侧有金属遮挡背光，在另一侧彩膜玻璃基板有黑矩阵遮挡环境光。实际上，a-Si TFT受不同光强的照射，其漏电流会产生相应的变化，当光照越强，漏电流越大，此电流被称为光电流。
利用a-Si TFT的光电流的特点，可实现光电转换和光学输入。进而可在TFT-LCD上实现集成光学触摸屏，实现显示和触摸一体化制作。
现有技术中的光学触摸屏中的光电传感器如图1所示，由光电TFT T1、读出TFT T3和电容C1构成，光电TFT T1用于将光信号转换为电信号；电容C1用于维持电信号的稳定；读出TFT T3用于将电信号读取到外电路以便下一步处理。实际应用中，读出TFT的漏极连接到一根读取线上，该读取线一般还会连接其他读出TFT，在对当前的光电传感器进行电信号读出时，其他读出TFT即使未被导通，实际上也会产生一定的漏电流，这样会产生噪声，这样可能会导致无法正确检测到对应位置是否有触控。
发明内容
针对现有的光电传感器存在的上述问题，本发明的一个目的是提高读取线检测到的电信号的信噪比。
根据本发明的第一方面，提供了一种光电传感器。所述光电传感器包括：光电元件、放大晶体管、读出晶体管、复位晶体管和电容，并具有若干控制输入端。其中，所述光电元件包括输出端和参考电平输入端。所述光电元件的输出端、所述放大晶体管的栅极和所述复位晶体管的源极连接所述电容的第一端。所述光电元件的参考电平输入 端、所述读出晶体管的源极连接第一参考电压输入端。所述复位晶体管的漏极、所述放大晶体管的漏极连接第二参考电压输入端。所述读出晶体管的栅极和所述复位晶体管的栅极各自连接一个控制输入端。
可选地，所述光电元件包括光电晶体管，所述光电晶体管的漏极连接到所述光电元件的输出端，源极连接到所述光电元件的参考电平输入端，栅极连接到一个控制输入端。
可选地，所述第一参考电压为高电压，第二参考电压为低电压。
可选地，所述读出晶体管和所述复位晶体管的导通电平相同。
可选地，各个晶体管均为N型晶体管。
可选地，所述光电晶体管的栅极连接所述第二参考电压输入端。
可选地，所述电容的第二端连接所述第二参考电压输入端。
可选地，所述光电元件包括光电二极管，所述光电二极管的阳极连接所述光电元件的输出端，阴极连接所述光电元件的参考电平输入端。
根据本发明的第二方面，提供了一种阵列基板。所述阵列基板包括基底以及形成在基底上的多条栅极和多条数据线，所述多条栅线和所述多条数据线将阵列基板划分为多个像素区域。所述阵列基板还包括：形成在基底上的光电传感器，所述光电传感器为上述任一项所述的光电传感器。
可选地，所述读出晶体管和所述复位晶体管的导通电平相同。每一个光电传感器设置在相邻两行的栅线之间。其中读出晶体管的栅极所连接的控制输入端连接相邻两行栅线的上一行栅线，该读出晶体管适于在该栅线上施加栅极扫描脉冲时导通。复位晶体管的栅极所连接的控制输入端连接所述相邻两行栅线的下一行栅线，该复位晶体管适于在该栅线上施加栅极扫描脉冲时导通。
根据本发明的第三方面，提供了一种用于驱动上述任一项所述的光电传感器的方法。所述方法包括：
在读出阶段，在所述读出晶体管的栅极所连接的控制输入端施加控制信号使所述读出晶体管导通；
在复位阶段，在所述复位晶体管的栅极所连接的控制输入端施加控制信号使所述复位晶体管导通。
根据本发明的第四方面，提供了一种显示装置。该显示装置包括上述任一项所述的阵列基板。
本公开提供的光电传感器中，设置放大晶体管对写入到电容的电信号进行放大，这样能够在读出阶段，放大所读出的信号的强度，从而提高读取到的信号的信噪比，有助于提高光电检测精度。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单的介绍。应当意识到，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术中一种光电传感器的结构示意图；
图2为根据本发明一个实施例提供的一种光电传感器的结构示意图；
图3为对图2所示的光电传感器进行驱动时关键信号的时序图；
图4为根据本发明另一个实施例提供的光电传感器的结构示意图。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步描述，以便能够让本领域普通技术人员更好地理解本发明的目的、技术方案和优点。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
根据本发明一个实施例提供了一种光电传感器，该光电传感器包括光电元件，用于将光信号转换为电信号以便从输出端输出。在这个实施例中，该光电元件包括光电晶体管T1。光电晶体管T1的漏极构成光电元件的输出端，源极构成光电元件的参考电平输入端。可选地，光电晶体管T1的栅极对应于一个控制输入端。在一个具体实现中，如图2所示，该光电传感器可以包括同为N型晶体管的光电晶体管T1、放大晶体管T2、读出晶体管T3、复位晶体管T4和电容C1。其中，光电晶体管T1的漏极、放大晶体管T2的栅极和复位晶体管T4的源极可以连接电容C1的第一端，读出晶体管T3的源极可以连接放大晶体管T2的源极。光电晶体管T1的源极、放大晶体管T2、读出晶体管T3的源极连接第一 参考电压(在图中被示出为高电压)输入端Vbias。复位晶体管T4的漏极、放大晶体管T2的漏极连接第二参考电压(在图中被示出为低电压)输入端Vss。光电晶体管T1的栅极、读出晶体管T3的栅极和复位晶体管T4的栅极也各自连接到一个控制输入端上。在一个具体实现中，光电晶体管T1的栅极可以连接低电压输入端Vss，读出晶体管T3的栅极可以连接一个控制信号输入端Gn，复位晶体管T4的栅极可以连接另一个控制信号输入端Gn+1。另外电容C1的第二端也可以连接低电压输入端Vss。
图3为对图2所示的光电传感器进行驱动时关键信号的时序图。对图2所示的光电晶体管的驱动方法可以参考图3来描述。所述方法包括：
在读出阶段S1，在控制信号输入端Gn施加控制信号使读出晶体管T3导通。
在复位阶段S2，在控制信号输入端Gn+1施加控制信号使复位晶体管T4导通，从而使电容C1的第一端复位。
在具体实施时，如果读出晶体管T3和复位晶体管T4均为N型晶体管，那么这里的控制信号可以是相同的高电平脉冲，可以分别使读出晶体管T3和复位晶体管T4导通。
在上述的实施例中，由于放大晶体管T2的作用，经读出晶体管T3读出的电流相比于直接从电容C1的第一端读出的电流放大了若干倍(放大的倍数为放大晶体管本身的结构相关的常数)，即经读取线读取到的信号中有用信号被放大，相应的信噪比也增大，从而能够提高光电检测的精度。
在本发明的一些实施例中，读出晶体管T3和复位晶体管T4的导通电平相同。这样做的好处是，可以采用相邻两行栅线中上一行栅线中的驱动信号将读出晶体管T3导通，完成对信号读出过程。之后利用所述相邻两行栅线中下一行栅线中的驱动信号将复位晶体管T4导通，完成对电容C1的第一端的复位过程。当然在实际应用中，上述的读出晶体管T3和复位晶体管T4的导通电平也可以不同，并采用其他信号线进行驱动，相应的技术方案也能够达到本发明的基本目的，也应该落入本发明的保护范围。
在本发明的一些实施例中，各个晶体管均为N型晶体管，这样做的好处是能够采用同一的工艺制作，降低制作难度。就为了达到本发明 的基本目的而言，上述的各个晶体管中的部分晶体管也可以替换为P型晶体管，相应的技术方案也应该落入本发明的保护范围。当上述的读出晶体管T3为P型晶体管时，在读出阶段施加到读出晶体管T3的栅极的控制信号可以为低电平脉冲。相应地，当上述的复位晶体管T4为P型的晶体管时，在复位阶段施加到复位晶体管T4的栅极的控制信号可以为低电平脉冲。
在本发明的一些实施例中，上述的光电晶体管T1的栅极也连接第二参考电压或低电压输入端Vss，这样就通过共用低电压输入端的方式将光电晶体管T1处于关断状态，以使光电晶体管T1能够感应光照变化产生相应的电流。
在本发明的一些实施例中，电容C1的第二端也可以连接低电压输入端Vss，这样能够使电容C1的第二端的电压保持稳定，避免受到静电或者其他因素影响而发生电压变化，从而避免因为电容C1的第二端的电压变化导致电容C1的第一端的电压变化。
根据本发明另一个实施例提供的光电传感器的结构可以参考图4，与图2中的光电传感器的结构不同的是，该光电传感器的光电元件包括光电二极管L，也就是采用光电二极管L替换光电晶体管T1。该光电二极管L的阳极构成光电元件的输出端，阴极构成光电元件的参考电平输入端。在一个具体的实现中，如图4所示，该光电二极管L的阳极连接电容C1的第一端，阴极连接第一参考电压(在图中被示出为高电压)输入端Vbias。所示实施例提供的结构同样可以完成相应的光电检测的过程，并且同样能够增加通过读取线检测到的信号的信噪比。
对上述实施例提供的光电传感器的驱动方法可以与前文所述驱动方法一致，在此不再详细说明。
根据本发明的另一个方面，本发明还提供了一种阵列基板。该阵列基板可以包括：基底以及形成在基底上的多条栅极和多条数据线，所述多条栅线和所述多条数据线将阵列基板划分为多个像素区域。所述阵列基板还可以包括：形成在基底上的光电传感器，所述光电传感器可以为上述任何一个实施例所述的光电传感器。
在一个具体实现中，上述的阵列基板中，每一个光电传感器设置在相邻两行的栅线之间。其中读出晶体管的栅极所连接的控制输入端连接相邻两行栅线的上一行栅线，该读出晶体管适于在该栅线上施加 栅极扫描脉冲时导通。复位晶体管的栅极所连接的控制输入端连接所述相邻两行栅线的下一行栅线，该复位晶体管适于在该栅线上施加栅极扫描脉冲时导通。在一个具体实现中，如果读出晶体管和复位晶体管均为N型晶体管，那么上述的栅极扫描脉冲可以为图3中所示的高电平脉冲，可以分别使读出晶体管和复位晶体管导通。
在上述实施例的技术方案中，借助于现有的信号线就能够完成对光电传感器的驱动过程，降低了显示基板的结构复杂度。
上述显示基板可以为液晶显示装置中的显示基板，也可以为有机电致发光显示装置中的显示基板。
根据本发明的再一方面，本发明还提供了一种显示装置，包括上述所述的显示基板。
所述显示装置可以为：电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
不难理解的是，本发明提供的显示装置可以为液晶显示装置，也可以为其他类型的显示装置。
可以理解的是，以上所述仅是本发明的示例性实施方式，但本发明的保护范围并不局限于此。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明精神和技术原理的前提下，还可以做出若干变化或替换，这些变化或替换都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所附权利要求的保护范围为准。
本申请用了诸如“第一”、“第二”、“第三”等之类的措词。在无附加上下文时，使用这样的措词并不旨在暗示排序而实际上用于标识目的。例如短语“第一版本”和“第二版本”未必意味着第一版本恰为第一个版本或者是在第二版本之前创建的或者甚至在第二版本之前请求或者操作第一版本。实际上，这些短语用来标识不同版本。
在权利要求书中，任何置于括号中的附图标记都不应当解释为限制权利要求。术语“包括”并不排除除了权利要求中所列出的元件或步骤之外的元件或步骤的存在。元件前的词语“一”或“一个”并不排除存在多个这样的元件。
在列举了若干装置的设备或系统权利要求中，这些装置中的一个或多个能够在同一个硬件项目中体现。仅仅某个措施记载在相互不同 的从属权利要求中这个事实并不表明这些措施的组合不能被有利地使用。

Claims (12)

  1. 一种光电传感器，包括：光电元件、放大晶体管、读出晶体管、复位晶体管和电容，并具有若干控制输入端；其中，所述光电元件包括输出端和参考电平输入端，所述光电元件的输出端、所述放大晶体管的栅极和所述复位晶体管的源极连接所述电容的第一端；所述光电元件的参考电平输入端、所述读出晶体管的源极、所述放大晶体管的源极连接第一参考电压输入端；所述复位晶体管的漏极、所述放大晶体管的漏极连接第二参考电压输入端；所述读出晶体管的栅极和所述复位晶体管的栅极各自连接一个控制输入端。
  2. 如权利要求1所述的光电传感器，其中，所述光电元件包括光电晶体管，所述光电晶体管的漏极连接到所述光电元件的输出端，源极连接到所述光电元件的参考电平输入端，栅极连接到一个控制输入端。
  3. 如权利要求2所述的光电传感器，其中，所述第一参考电压为高电压，第二参考电压为低电压。
  4. 如权利要求3所述的光电传感器，所述读出晶体管和所述复位晶体管的导通电平相同。
  5. 如权利要求4所述的光电传感器，其中，各个晶体管均为N型晶体管。
  6. 如权利要求5所述的光电传感器，其中，所述光电晶体管的栅极连接所述第二参考电压输入端。
  7. 如权利要求3所述的光电传感器，其中，所述电容的第二端连接所述第二参考电压输入端。
  8. 如权利要求1所述的光电传感器，其中，所述光电元件包括光电二极管，所述光电二极管的阳极连接所述光电元件的输出端，阴极连接所述光电元件的参考电平输入端。
  9. 一种阵列基板，包括基底以及形成在基底上的多条栅极和多条数据线，所述多条栅线和所述多条数据线将阵列基板划分为多个像素区域；
    所述阵列基板还包括：
    形成在所述基底上的、如权利要求1-8中任一项所述的光电传感器。
  10. 一种阵列基板，包括基底以及形成在基底上的多条栅极和多条数据线，所述多条栅线和所述多条数据线将阵列基板划分为多个像素区域；
    所述阵列基板还包括：
    形成在所述基底上的、如权利要求4-6中任一项所述的光电传感器，每一个光电传感器设置在相邻两行的栅线之间；其中读出晶体管的栅极所连接的控制输入端连接相邻两行栅线的上一行栅线，该读出晶体管适于在该栅线上施加栅极扫描脉冲时导通；复位晶体管的栅极所连接的控制输入端连接所述相邻两行栅线的下一行栅线，该复位晶体管适于在该栅线上施加栅极扫描脉冲时导通。
  11. 一种用于驱动如权利要求1-8中任一项所述的光电传感器的方法，包括：
    在读出阶段，在所述读出晶体管的栅极所连接的控制输入端施加控制信号使所述读出晶体管导通；
    在复位阶段，在所述复位晶体管的栅极所连接的控制输入端施加控制信号使所述复位晶体管导通。
  12. 一种显示装置，包括权利要求9或10所述的阵列基板。
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